Alfred Yi Summit Cho
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Physics
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(Suggest an Edit or Addition)Alfred Yi Summit Cho's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Quantum Cascade Laser (1994) (1884)
- Recent progress in quantum cascade lasers and applications (2001) (629)
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications (1986) (550)
- X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface (1979) (463)
- High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature (1996) (395)
- Distributed feedback quantum cascade lasers (1997) (379)
- Optical surface waves in periodic layered media (1978) (378)
- Resonant cavity light‐emitting diode (1992) (332)
- Short wavelength ( 3:4 m) quantum cascade laser based on strain-compensated InGaAs/AllnAs (1998) (309)
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures (1970) (287)
- Quantum cascade lasers: ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission (2002) (280)
- Resonant tunneling in quantum cascade lasers (1998) (278)
- Sensitive absorption spectroscopy with a room-temperature distributed-feedback quantum-cascade laser. (1998) (272)
- Quantum Cascade Surface-Emitting Photonic Crystal Laser (2003) (271)
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face (1971) (257)
- Ultra-broadband semiconductor laser (2002) (256)
- Observation of an electronic bound state above a potential well (1992) (255)
- Film Deposition by Molecular-Beam Techniques (1971) (254)
- Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers (2000) (250)
- Sequential resonant tunneling through a multiquantum well superlattice (1986) (232)
- Highly Efficient Light-Emitting Diodes with Microcavities (1994) (230)
- Growth of III–V semiconductors by molecular beam epitaxy and their properties (1983) (229)
- Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N‐n heterojunction by C‐V profiling (1983) (209)
- Experimental demonstration of a high quality factor photonic crystal microcavity (2003) (202)
- VERTICAL TRANSITION QUANTUM CASCADE LASER WITH BRAGG CONFINED EXCITED STATE (1995) (202)
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic (1989) (201)
- Far-infrared surface-plasmon quantum-cascade lasers at 21.5 μm and 24 μm wavelengths (2001) (192)
- Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors (1991) (192)
- Bonding direction and surface‐structure orientation on GaAs (001) (1976) (179)
- Study of electron traps in n‐GaAs grown by molecular beam epitaxy (1976) (177)
- Cavity ringdown spectroscopic detection of nitric oxide with a continuous-wave quantum-cascade laser. (2001) (169)
- Coupled quantum well semiconductors with giant electric field tunable nonlinear optical properties in the infrared (1994) (169)
- Adsorption and desorption kinetics of Cu and Au on (0001) graphite (1973) (167)
- Long-wavelength (? ? 8–11.5??µm) semiconductor lasers with waveguides based on surface plasmons (1998) (165)
- High performance interminiband quantum cascade lasers with graded superlattices (1998) (163)
- Continuous wave operation of a vertical transition quantum cascade laser above T=80 K (1995) (163)
- New frontiers in quantum cascade lasers and applications (2000) (159)
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers (1990) (155)
- High-power high-speed photodetectors-design, analysis, and experimental demonstration (1997) (154)
- Photoacoustic spectroscopy using quantum-cascade lasers. (1999) (152)
- Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide (1997) (151)
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy (1975) (150)
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing (1986) (149)
- Quantum cascade laser with plasmon‐enhanced waveguide operating at 8.4 μm wavelength (1995) (147)
- Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs (1978) (145)
- Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs (1998) (144)
- A new infrared detector using electron emission from multiple quantum wells (1983) (140)
- Spectroscopic detection of biological NO with a quantum cascade laser (2001) (139)
- Methane concentration and isotopic composition measurements with a mid-infrared quantum-cascade laser. (1999) (135)
- Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity (1987) (135)
- Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells (1985) (134)
- Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition (1977) (134)
- High-power continuous-wave quantum cascade lasers (1998) (133)
- High-frequency modulation without the relaxation oscillation resonance in quantum cascade lasers (2001) (133)
- A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy (1986) (127)
- Growth of Periodic Structures by the Molecular‐Beam Method (1971) (123)
- Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at λ≈8.5 μm (1998) (121)
- Kilohertz linewidth from frequency-stabilized mid-infrared quantum cascade lasers. (1999) (119)
- Raman injection laser (2005) (119)
- Cavity ringdown spectroscopy using mid-infrared quantum-cascade lasers. (2000) (118)
- Resonant second-order nonlinear optical processes in quantum cascade lasers. (2003) (117)
- Comparative study of ultrafast intersubband electron scattering times at ̃1.55 μm wavelength in GaN/AlGaN heterostructures (2002) (117)
- Laser action by tuning the oscillator strength (1997) (116)
- Effective mass filtering: Giant quantum amplification of the photocurrent in a semiconductor superlattice (1985) (115)
- Quantum cascade lasers with double metal-semiconductor waveguide resonators (2002) (113)
- Laser-based mid-infrared reflectance imaging of biological tissues. (2004) (113)
- Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm (2000) (113)
- Terahertz quantum-cascade-laser source based on intracavity difference-frequency generation (2007) (112)
- Velocity-matched distributed photodetectors with high-saturation power and large bandwidth (1996) (111)
- High-power λ≈8 μm quantum cascade lasers with near optimum performance (1998) (111)
- Dependence of the device performance on the number of stages in quantum-cascade lasers (1999) (109)
- High-resolution (Doppler-limited) spectroscopy using quantum-cascade distributed-feedback lasers. (1998) (109)
- Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells (2001) (109)
- Single-mode surface-plasmon laser (2000) (108)
- Optimized second-harmonic generation in quantum cascade lasers (2003) (107)
- GaAs planar technology by molecular beam epitaxy (MBE) (1975) (107)
- 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy (1983) (107)
- Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy (1985) (105)
- Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System (1980) (98)
- Complex-coupled quantum cascade distributed-feedback laser (1997) (97)
- Observation of large second order susceptibility via intersubband transitions at λ∼10 μm in asymmetric coupled AlInAs/GaInAs quantum wells (1991) (97)
- Single-mode, tunable distributed-feedback and multiple-wavelength quantum cascade lasers (2002) (97)
- Contact Charging of Micron‐Sized Particles in Intense Electric Fields (1964) (95)
- Recent developments in molecular beam epitaxy (MBE) (1979) (95)
- Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures (1983) (95)
- Free-space optical transmission of multimedia satellite data streams using mid-infrared quantum cascade lasers (2002) (94)
- Quantum-cascade laser measurements of stratospheric methane and nitrous oxide. (2001) (94)
- LASERS, OPTICS, AND OPTOELECTRONICS 635 Single-pass thin-film electro-optic modulator based on an organic molecular salt (1999) (94)
- Long wavelength superlattice quantum cascade lasers at λ≃17 μm (1999) (93)
- Long wavelength infrared (λ≂11 μm) quantum cascade lasers (1996) (93)
- Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy (1982) (92)
- Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy (1993) (92)
- OPTICS 2901 Quantum cascade laser: Temperature dependence of the performance characteristics and high T0 operation (1994) (91)
- Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking (1999) (90)
- P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs (1971) (90)
- Anomalous temporal response of gain guided surface emitting lasers (1991) (89)
- A multiwavelength semiconductor laser (1998) (89)
- Infrared (4-11 μm) quantum cascade lasers (1997) (88)
- Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nm (1993) (87)
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ= 4.4 μm (1988) (87)
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 mu m diameter core silica fibre (1990) (87)
- Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperature (1996) (86)
- Trace-gas detection in ambient air with a thermoelectrically cooled, pulsed quantum-cascade distributed feedback laser. (2000) (85)
- Magnesium‐doped GaAs and Alx Ga1−x As by molecular beam epitaxy (1972) (85)
- Application of Balanced Detection to Absorption Measurements of Trace Gases with Room-Temperature, Quasi-cw Quantum-Cascade Lasers. (2001) (84)
- Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature (1997) (83)
- Quantum cascade disk lasers (1996) (83)
- Effective utilization of quantum-cascade distributed-feedback lasers in absorption spectroscopy. (2000) (81)
- Vertical Cavity Single-Quantum-Well Laser (1989) (80)
- High-performance superlattice quantum cascade lasers (1999) (80)
- Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor (1974) (79)
- Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures (1990) (78)
- Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range (1987) (77)
- Observation of confined propagation in Bragg waveguides (1977) (77)
- Raman scattering in superlattices: Anisotropy of polar phonons (1980) (76)
- Epitaxy by periodic annealing (1969) (76)
- GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy (1974) (76)
- Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy (1976) (75)
- Resonant Stark tuning of second‐order susceptibility in coupled quantum wells (1992) (75)
- Measurement of the Γ‐L separation in Ga0.47In0.53As by ultraviolet photoemission (1982) (74)
- High-power inter-miniband lasing in intrinsic superlattices (1998) (74)
- Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface (1982) (74)
- Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers (1989) (74)
- Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at λ≅4.6-4.7 μm (2000) (73)
- Nonalloyed Ohmic contacts to n‐GaAs by molecular beam epitaxy (1978) (73)
- InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range (1990) (71)
- Thermoelectrically cooled quantum-cascade-laser-based sensor for the continuous monitoring of ambient atmospheric carbon monoxide. (2002) (70)
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications (1987) (70)
- A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier (1990) (70)
- Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxy (1982) (70)
- Narrowing of the intersubband electroluminescent spectrum in coupled‐quantum‐well heterostructures (1994) (69)
- Mid‐infrared field‐tunable intersubband electroluminescence at room temperature by photon‐assisted tunneling in coupled‐quantum wells (1994) (68)
- Long-wavelength photoluminescence of InAs1−xSbx(0 (1988) (67)
- Quantum cascade lasers with a heterogeneous cascade: Two-wavelength operation (2001) (67)
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures (1981) (66)
- New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band‐edge discontinuity (1986) (66)
- Frequency stabilization of quantum-cascade lasers by use of optical cavities. (2002) (65)
- Modulated barrier photodiode: A new majority‐carrier photodetector (1981) (65)
- Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence (2001) (64)
- Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification (1984) (63)
- Quantum wells with localized states at energies above the barrier height: A Fabry–Perot electron filter (1992) (63)
- High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxy (1983) (62)
- Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis (1999) (62)
- Free-running frequency stability of mid-infrared quantum cascade lasers. (2002) (62)
- Molecular beam epitaxial writing of patterned GaAs epilayer structures (1978) (60)
- Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven (1981) (60)
- Kolmogorov-Arnold-Moser transition and laser action on scar modes in semiconductor diode lasers with deformed resonators. (2002) (59)
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAs (1971) (59)
- Multiple-state resonant-tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier (1988) (58)
- Blue‐green surface‐emitting second‐harmonic generators on (111)B GaAs (1991) (58)
- Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes (2000) (57)
- Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs (1986) (57)
- Characterization of high purity GaAs grown by molecular beam epitaxy (1982) (56)
- Monolithic integration of photodetector with vertical cavity surface emitting laser (1991) (56)
- Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devices (1981) (56)
- LASERS, OPTICS, AND OPTOELECTRONICS 2721 Improvement of second-harmonic generation in quantum-cascade lasers with true phase matching (2004) (56)
- Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs on n‐type GaAs (1979) (55)
- High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices (1990) (55)
- Room temperature mid-infrared quantum cascade lasers (1996) (55)
- Monolithic active mode locking of quantum cascade lasers (2000) (54)
- High-speed digital data transmission using mid-infrared quantum cascade lasers (2001) (54)
- Growth of a novel InAs‐GaAs strained layer superlattice on InP (1985) (54)
- Charge injection logic (1990) (53)
- Long-wavelength (9.5-11.5 /spl mu/m) microdisk quantum-cascade lasers (1997) (53)
- Theoretical and experimental study of optical gain and linewidth enhancement factor of type-I quantum-cascade lasers (2004) (52)
- Optically induced switching in a p-channel double heterostructure optoelectronic switch (1986) (51)
- Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures (1982) (51)
- Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures (1982) (51)
- Near‐ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy (1989) (50)
- High‐purity GaAs and Cr‐doped GaAs epitaxial layers by MBE (1979) (50)
- Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy (1987) (50)
- Advances in molecular beam epitaxy (MBE) (1991) (49)
- Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures (1986) (49)
- Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions (2000) (49)
- Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy: physics and applications (1994) (49)
- Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3 ) as Gate Oxide (1999) (48)
- Quantum transport in GaInAs-AlInAs heterojunctions, and the influence of intersubband scattering (1982) (48)
- Surface plasmon quantum cascade lasers at λ∼19 μm (2000) (47)
- Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling (1988) (47)
- Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors (1983) (47)
- Epitaxy of silicon doped gallium arsenide by molecular beam method (1971) (47)
- Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells (1989) (47)
- Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor (1988) (46)
- Quantum cascade laser: an intersub-band semiconductor laser operating above liquid nitrogen temperature (1994) (46)
- Mid-infrared tunable quantum cascade lasers for gas-sensing applications (2000) (46)
- Low‐noise millimeter‐wave mixer diodes prepared by molecular beam epitaxy (MBE) (1977) (46)
- Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus (1994) (46)
- Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium Fluoride (1970) (46)
- Quantum cascade unipolar intersubband light emitting diodes in the 8–13 μm wavelength region (1995) (45)
- New high speed long wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes (1985) (45)
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing (1987) (45)
- Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy (1982) (45)
- Transportable automated ammonia sensor based on a pulsed thermoelectrically cooled quantum-cascade distributed feedback laser. (2002) (45)
- An experimental determination of enhanced electron g-factors in GaInAs-A1InAs heterojunctions (1983) (44)
- Application of internal photoemission from quantum-well and heterojunction superlattices to infrared photodetectors (1983) (44)
- Ledistor—a three‐terminal double heterostructure optoelectronic switch (1987) (44)
- Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy (1981) (44)
- Very long wavelength InxGa1−xAs/GaAs quantum well infrared photodetectors (1994) (44)
- GaAs vertical-cavity surface emitting lasers fabricated by reactive ion etching (1991) (43)
- Properties of aluminum epitaxial growth on GaAs (1981) (43)
- Mid-infrared (λ≈7.4 μm) quantum cascade laser amplifier for high power single-mode emission and improved beam quality (2002) (43)
- Growth of three-dimensional dielectric waveguides for integrated optics by molecular-beam-epitaxy method (1972) (42)
- Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields (1981) (42)
- Characteristics of Schottky diodes with microcluster interface (1983) (42)
- Injectorless quantum-cascade lasers (2001) (41)
- Evaporative Lifetimes of Copper, Chromium, Beryllium, Nickel, Iron, and Titanium on Tungsten and Oxygenated Tungsten (1966) (40)
- Dual-wavelength emission from optically cascaded intersubband transitions. (1998) (39)
- Single-crystal GaN/Gd2O3/GaN heterostructure (2002) (39)
- Using a Wavelength-Modulated Quantum Cascade Laser to Measure NO Concentrations in the Parts-per-Billion Range for Vehicle Emissions Certification (2002) (39)
- Growth conditions to achieve mobility enhancement in AlxGa1-xAs-GaAs heterojunctions by m.b.e. (1980) (39)
- GaAs IMPATT diodes prepared by molecular beam epitaxy (1974) (39)
- High-power long-wavelength (/spl lambda//spl sim/11.5 μm) quantum cascade lasers operating above room temperature (1998) (38)
- New resonant-tunneling devices with multiple negative resistance regions and high room-temperature peak-to-valley ratio (1988) (38)
- Molecular‐beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder (1981) (38)
- Coupled-cavity resonant passive mode-locked Nd:yttrium lithium fluoride laser. (1991) (38)
- Experimental demonstration of a balanced electroabsorption modulated microwave photonic link (2001) (38)
- Influence of Growth Conditions on The Threshold Current Density of Double Heterostructure Lasers Prepared by Molecular Beam Epitaxy (1980) (37)
- In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts (1994) (37)
- Milliwatt second harmonic generation in quantum cascade lasers with modal phase matching (2004) (37)
- Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy (1983) (37)
- Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μm (1983) (36)
- Generation and detection of high-speed pulses of mid-infrared radiation with intersubband semiconductor lasers and detectors (2000) (36)
- Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport (1992) (36)
- Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy (1988) (36)
- Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures (1982) (36)
- Third harmonic generation in a Quantum Cascade laser with monolithically integrated resonant optical nonlinearity. (2004) (36)
- Low‐noise and high‐power GaAs microwave field‐effect transistors prepared by molecular beam epitaxy (1977) (35)
- Temperature dependence of threshold of strained quantum well lasers (1991) (35)
- How molecular beam epitaxy (MBE) began and its projection into the future (1999) (35)
- In0.53Ga0.47As FET's with insulator-assisted Schottky gates (1982) (35)
- Optimization of broadband quantum cascade lasers for continuous wave operation (2003) (35)
- Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates (1996) (35)
- Sub-Doppler resolution limited Lamb-dip spectroscopy of NO with a quantum cascade distributed feedback laser. (2000) (34)
- Detection of biogenic CO production above vascular cell cultures using a near-room- temperature QC-DFB laser (2002) (34)
- Sub-picosecond electron scattering time for /spl lambda/=1.55 /spl mu/m intersubband transitions in GaN/AlGaN multiple quantum wells (2001) (33)
- Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe (1991) (33)
- High-speed operation of gain-switched midinfrared quantum cascade lasers (1999) (33)
- Negative transconductance resonant tunneling field‐effect transistor (1987) (33)
- Application of molecular-beam epitaxial layers to heterostructure lasers (1975) (33)
- Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy (1995) (33)
- Nonalloyed and in situ Ohmic contacts to highly doped n‐type GaAs layers grown by molecular beam epitaxy (MBE) for field‐effect transistors (1979) (32)
- Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices (1990) (32)
- Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy (1980) (32)
- On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures (1990) (32)
- Nonlinear polarization in nitrides revealed with hydrostatic pressure (2003) (32)
- Electronic distribution in superlattice quantum cascade lasers (2000) (32)
- Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes (1989) (32)
- ELECTRICAL CHARACTERISTICS OF INP GROWN BY MOLECULAR BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKING CELL (1994) (32)
- High mobility GaAs-AlxGa1-xAs single period modulation-doped heterojunctions (1981) (31)
- Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy (1981) (31)
- A new GaSb/AlSb/GaSb/AlSb/InAs double‐barrier interband tunneling diode and its tunneling mechanism (1990) (31)
- Two-dimensional magnetophonon resonance. II. GaInAs-AlInAs heterojunctions (1983) (30)
- Initial Results of a High Throughput MBE System for Device Fabrication (1983) (30)
- Pulsed and continuous-wave operation of long wavelength infrared (/spl lambda/=9.3 /spl mu/m) quantum cascade lasers (1997) (30)
- Back‐surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular‐beam epitaxy (1977) (30)
- Infrared cavity ringdown and integrated cavity output spectroscopy for trace species monitoring (2002) (29)
- Luminescence investigations of highly strained‐layer InAs‐GaAs superlattices (1986) (29)
- Simultaneously at two wavelengths (5.0 and 7.5 /spl mu/m) singlemode and tunable quantum cascade distributed feedback lasers (2002) (29)
- Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy (2002) (29)
- Planar isolated GaAs devices produced by molecular beam epitaxy (1976) (29)
- Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE (1992) (29)
- Use of oxygen‐doped AlxGa1−xAs for the insulating layer in MIS structures (1978) (29)
- A frequency-modulated quantum-cascade laser for spectroscopy of CH4 and N2O isotopomers (2005) (29)
- Vertical cavity surface emitting laser diodes (1990) (28)
- Gain-switched GaAs vertical-cavity surface-emitting lasers (1993) (28)
- Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions (1978) (28)
- Instrumental Effects of the Retarding Grids in a LEED Apparatus (1969) (28)
- Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds (1995) (27)
- Continuous wave operation of quantum cascade lasers based on vertical transitions at λ=4.6 μm (1996) (27)
- Base doping limits in heterostructure bipolar transistors (1990) (27)
- Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers (2002) (27)
- Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy (1982) (27)
- Depletion mode modulation doped Al0.48In0.52As-Ga0.47In0.53As heterojunction field effect transistors (1982) (27)
- Electrically gain-switched vertical-cavity surface-emitting lasers (1992) (27)
- Reduction of surface recombination current in GaAs p‐n junctions (1979) (27)
- Threshold reduction in quantum cascade lasers with partially undoped, dual-wavelength interdigitated cascades (2002) (26)
- Quantitative gas sensing by backscatter-absorption measurements of a pseudorandom code modulated λ ∼ 8-µm quantum cascade laser (2000) (26)
- Electron traps created by high temperature annealing in MBE n-GaAs (1981) (26)
- Mean Adsorption Lifetimes and Activation Energies of Silver and Gold on Clean, Oxygenated, and Carburized Tungsten Surfaces (1969) (26)
- InAs/AlSb/GaSb single‐barrier interband tunneling diodes with high peak‐to‐valley ratios at room temperature (1990) (26)
- Substrate rotation‐induced compositional oscillation in molecular beam epitaxy (MBE) (1983) (26)
- GaAs MESFET prepared by molecular beam epitaxy (MBE) (1976) (26)
- Linewidth enhancement factor in strained quantum well lasers (1990) (26)
- High temperature and high frequency performance of gain-guided surface emitting lasers (1991) (26)
- Investigation of the spectral width of quantum cascade laser emission near 5.2 μm by a heterodyne experiment (2001) (26)
- Wet Chemical and Plasma Etching of Ga2 O 3 ( Gd2 O 3 ) (1997) (26)
- Quantum cascade lasers with low-loss chalcogenide lateral waveguides (2001) (25)
- Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells (1987) (25)
- Impact ionization rates for electrons and holes in Al0.48In0.52As (1984) (24)
- Experimental realization of an n-channel double heterostructure optoelectronic switch (1986) (24)
- Investigation of the influence of the well and the barrier thicknesses in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures (1990) (24)
- Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors (1990) (24)
- Tunable interminiband infrared emission in superlattice electron transport (1997) (24)
- Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators (1994) (24)
- Optical investigation of modulation‐doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures (1985) (24)
- Thermal characteristics of quantum-cascade lasers by micro-probe optical spectroscopy (2003) (24)
- Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy (1988) (23)
- Room-temperature pseudomorphic InxGa1−xAs/GaAs quantum well surface-emitting lasers at 0.94−1.0 μm wavelengths (1989) (23)
- Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy (1984) (23)
- In/sub 0.53/Ga/sub 0.47/As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading (1997) (23)
- Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices (1984) (23)
- Subband-Landau level coupling in a two-dimensional electron gas in tilted magnetic fields (1986) (23)
- Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p+‐Ga0.47In0.53As layer grown by molecular beam epitaxy (1982) (23)
- Light-emitting transistor based on real-space transfer: electrical and optical properties (1993) (22)
- A novel monolithic distributed traveling-wave photodetector with parallel optical feed (2000) (22)
- Single-mode surface plasmon laser (2000) (22)
- Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs (1984) (22)
- Two-dimensional electron gas in InGaAs∕InAlAs quantum wells (2006) (22)
- Nonlinear macroscopic polarization in GaN/AlxGa1−xN quantum wells (2002) (22)
- Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applications (1985) (21)
- Selectively-doped Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistor (1983) (21)
- Cryogenic Millimeter-Wave Receiver Using Molecular Beam Epitaxy Diodes (1978) (21)
- A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuits (1985) (21)
- Microwave multiple-state resonant tunneling bipolar transistors (1989) (21)
- Chemical reaction at the Al–GaAs interface (1981) (21)
- Molecular Beam Epitaxy From Research to Manufacturing (1995) (21)
- Near-single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier (1987) (20)
- The resonant-tunneling field-effect transistor: A new negative transconductance device (1987) (20)
- Long wavelength velocity-matched distributed photodetectors for RF fibre optic links (1998) (20)
- High-frequency submicrometer Al/sub 0.48/In/sub 0.52/As/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors (1989) (20)
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs (1998) (20)
- Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes (2004) (20)
- High-power, continuous-wave, current-tunable, single-mode quantum-cascade distributed-feedback lasers at λ ≅ 5.2 and λ ≅ 7.95 µm (2000) (20)
- Lasing mode pattern of a quantum cascade photonic crystal surface-emitting microcavity laser (2004) (20)
- Multi-terminal light emitting logic device electrically reprogrammable between OR and NAND functions (1992) (19)
- High power quantum cascade lasers (1998) (19)
- Resonant tunnelling gate field-effect transistor (1987) (19)
- Properties of Schottky barriers and p‐n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers (1974) (19)
- Photon noise and correlations in semiconductor cascade lasers (2000) (19)
- Tin doping in Ga 0.47 In 0.53 As and Al 0.48 In 0.52 As grown by molecular-beam epitaxy (1981) (19)
- Parallel feed travelling wave distributed pin photodetectors with integrated MMI couplers (2002) (19)
- Molecular beam epitaxy and optical evaluation of AlxGa1-xAs (1971) (19)
- Quantum cascade laser: A new optical source in the mid-infrared (1995) (19)
- Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells (1996) (19)
- Low Loss AlxGa1-xAs Waveguides Grown by Molecular Beam Epitaxy (1976) (19)
- Interdigitated Al0.48In0.52As/Ga0.47In0.53As photoconductive detectors (1984) (19)
- New minority hole sinked photoconductive detector (1983) (18)
- Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers (2004) (18)
- High peak power (2.2 W) superlattice quantum cascade laser (2001) (18)
- Stability of pulse emission and enhancement of intracavity second-harmonic generation in self-mode-locked quantum cascade lasers (2004) (18)
- High-reflectivity AlAs/sub 0.52/Sb/sub 0.48//GaInAs(P) distributed Bragg mirror on InP substrate for 1.3-1.55 mu m wavelengths (1989) (18)
- Second harmonic generation in a GaP waveguide (1975) (18)
- Modulation‐doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55‐μm applications (1983) (18)
- The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction (2001) (18)
- Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures (1981) (18)
- Improvement of peak‐to‐valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure (1992) (17)
- Twenty years of molecular beam epitaxy (1995) (17)
- Enhanced mobility in inverted AlxGa1-xAs/GaAs heterojunctions: binary on top of ternary (1981) (17)
- Minimization of the offset voltage in heterojunction dipolar transistors by using a thick spacer (1993) (17)
- GaAs/Ga0.47In0.53As lattice‐mismatched Schottky barrier gates: Influence of misfit dislocations on reverse leakage currents (1985) (17)
- Quantum-well intersub-band electroluminescent diode at λ=5μm (1993) (17)
- Molecular Beam Epitaxy (2003) (17)
- Quantum devices, MBE technology for the 21st century (2001) (17)
- Narrowing of the intersubband absorption spectrum by localization of continuum resonances in a strong electric field (1993) (17)
- High temperature (T ≥ 425 K) pulsed operation of quantum cascade lasers (2000) (17)
- Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy (1985) (17)
- Bias‐free selectively doped AlxGa1−x As‐GaAs picosecond photodetectors (1982) (17)
- Noncascaded intersubband injection lasers at λ≈7.7 μm (1998) (17)
- A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure (1987) (17)
- Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy (1980) (17)
- Long-wavelength interminiband Fabry-Pérot and distributed feedback quantum cascade lasers (1998) (17)
- APPLICATION OF BALANCED DETECTION TO ABSORPTION MEASUREMENTS OF TRACE GASES WITH ROOM-TEMPERATURE, QUASI-CW QC LASERS (2001) (17)
- Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors (1990) (17)
- Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/GaAs power MOSFETs (1999) (16)
- Parity generator circuit using a multistate resonant tunnelling bipolar transistor (1988) (16)
- Active mode locking of broadband quantum cascade lasers (2004) (16)
- Ion-implantation and activation behavior of Si in MBE-Grown GaAs on Si substrates for GaAs MESFET's (1987) (16)
- Resonant multiphoton electron emission from a quantum well (1992) (16)
- Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures (1993) (16)
- Epitaxial growth and optical evaluation of gallium phosphide and gallium arsenide thin films on calcium fluoride substrate (1970) (16)
- AlyGa1‐yAs‐AlxGa1‐x as laser structures for integrated optics grown by molecular‐beam epitaxy (1977) (16)
- Resonant Tunnelling and Superlattice Devices: Physics and Circuits (1990) (15)
- Single-mode tunable quantum cascade lasers in the spectral range of the CO2 laser at /spl lambda/=9.5-10.5 μm (2000) (15)
- Buried heterostructure quantum cascade lasers (1998) (15)
- Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy (1977) (15)
- Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field (1990) (15)
- Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on top (1982) (15)
- Transparent conductive metal‐oxide contacts in vertical‐injection top‐emitting quantum well lasers (1991) (15)
- Power and efficiency limits in single-mirror light emitting diodes with enhanced intensity (1992) (15)
- New GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (1990) (14)
- Light emitting charge injection transistor with p‐type collector (1992) (14)
- High temperature performance of three-quantum-well vertical-cavity top-emitting lasers (1991) (14)
- Growth and Characterization of GaN/AlGaN Superlattices for Near‐Infrared Intersubband Transitions (2001) (14)
- MIDINFRARED EMISSION FROM COUPLED WANNIER-STARK LADDERS IN SEMICONDUCTOR SUPERLATTICES (1998) (14)
- Quantum photoconductive gain by effective mass filtering and negative conductance in superlattice pn junctions (1985) (14)
- An ultrahigh speed modulated barrier photodiode made on P-type gallium arsenide substrates (1981) (14)
- In0.53Ga0.47As p‐i‐n photodiodes with transparent cadmium tin oxide contacts (1992) (14)
- Frequency shifted polaron coupling in GaInAs heterostructures (1986) (13)
- Minimal group refractive index dispersion and gain evolution in ultra-broad-band quantum cascade lasers (2002) (13)
- GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy (1998) (13)
- Near-perfect correlation of the resistance components of mesoscopic samples at the quantum Hall regime. (2003) (13)
- Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures (1990) (13)
- High Efficiency, Narrow Spectrum Resonant Cavity Light Emitting Diodes (1995) (13)
- In Ga As MSM Photodiodes with Transparent CTO Schottky Contacts and Digital Superlattice Grading (1997) (13)
- Measurement of MIS capacitors with oxygen‐doped AlxGa1−xAs insulating layers on GaAs (1978) (13)
- Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxy (1983) (13)
- Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs (1995) (12)
- New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems (1984) (12)
- Observation of a quantized hall resistivity in the presence of mesoscopic fluctuations. (2003) (12)
- Molecular‐beam epitaxial growth of graded band‐gap quaternary GaxAlyIn1−x−yAs multilayer heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh ionization ratio (1987) (12)
- Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1−xAs field‐effect transistors (1982) (12)
- Zn-diffused back-illuminated p-i-n photodiodes in InGaAs/InP grown by molecular-beam epitaxy (1980) (12)
- Resonant Zener tunneling of electrons between valence‐band and conduction‐band quantum wells (1987) (12)
- QUANTIZATION EFFECT ON CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF AN INAS/ALSB/GASB INTERBAND TUNNELING DIODE (1990) (12)
- Intersubband electroluminescence from long-side-cleaved quantum-cascade lasers above threshold: Investigation of phonon bottleneck effects (2000) (12)
- Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe (1991) (12)
- Quantum Cascade Laser: A Four Level Intersubband Semiconductor Laser for the mid to Submillimeter Wave Region (1994) (12)
- Fabrication technologies for quantum cascade photonic-crystal microlasers (2004) (12)
- Intersubband lifetime in quantum wells with transition energies above and below the optical phonon energy (1994) (12)
- Infrared Characterization of Particulate and Pollutant Emissions from Gas Turbine Combustors (2001) (12)
- Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy (1991) (11)
- Narrow‐band electroluminescence at 3.5 μm from impact excitation and ionization of Fe2+ ions in InP (1996) (11)
- 10 GHz bandwidth monolithic p‐i‐n modulation‐doped field effect transistor photoreceiver (1993) (11)
- Symmetries of the resistance of mesoscopic samples in the quantum Hall regime (2004) (11)
- GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells (1995) (11)
- A structural study of the A1-Ge(001) interface using total-reflected x-ray diffraction (1980) (11)
- Rapid-scan Doppler-limited absorption spectroscopy using mid-infrared quantum cascade lasers (1999) (11)
- Absorption spectroscopy with quantum cascade lasers. (2001) (11)
- Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors (1982) (11)
- Very long wavelength (λ ≃ 16 µm) whispering gallery mode microdisk lasers (2000) (11)
- GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth (1991) (11)
- High-performance quantum cascade lasers with electric-field-free undoped superlattice (2000) (11)
- Recent Progress in GaN‐Based Superlattices for Near‐Infrared Intersubband Transitions (2002) (11)
- Distributed balanced photodetectors for high-performance RF photonic links (1999) (11)
- Chapter 2 Nonlinear Optics in Coupled-Quantum-Well Quasi-Molecules (1999) (11)
- Quasi‐ballistic resonant tunneling of minority electrons into the excited states of a quantum well (1989) (11)
- Noise Measurements and Noise Mechanisms in Microwave Mixer Diodes (1984) (11)
- Influence of substrate temperature on electron mobility in normal and inverted single period modulation doped AlxGa1−xAs/GaAs heterojunctions (1982) (11)
- Long wavelength (/spl lambda//spl sime/13 /spl mu/m) quantum cascade lasers (1998) (10)
- AlGaAs‐GaAs double‐heterostructure small‐area light‐emitting diodes by molecular‐beam epitaxy (1978) (10)
- Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy (1982) (10)
- Magnetization and density of states of the 2D electron gas in GaAs/AlGaAs heterostructures (1986) (10)
- Erratum: Mean Adsorption Lifetimes and Activation Energies of Silver and Gold on Clean, Oxygenated, and Carburized (1969) (10)
- AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors (1989) (10)
- Chapter 1 Quantum Cascade Laser (1999) (10)
- Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission (1988) (9)
- Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates (1990) (9)
- Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers (1991) (9)
- 1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth (1992) (9)
- Effects of confinement on carrier dynamics in In{sub 0.47}Ga{sub 0.53}As heterostructures (1998) (9)
- High power InGaAs/GaAs laser array (1990) (9)
- High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy (1990) (9)
- New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy (1983) (9)
- Quasiphase matching of second-harmonic generation in quantum cascade lasers by Stark shift of electronic resonances (2006) (9)
- Electrical switching speed of the double-heterostructure optoelectronic switch (1987) (9)
- Cryogenic temperature performance of modulation-doped field-effect transistors (1989) (9)
- Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds (1981) (9)
- Photocurrent reversal induced by localized continuum resonances in asymmetric quantum semiconductor structures (1993) (9)
- External-cavity tunable mid-infrared laser using off-band surface-emitting Bragg grating coupler (2005) (8)
- Activation energies of fundamental and higher order states in the fractional quantum Hall effect (1986) (8)
- A new Al0.3Ga0.7As/GaAs modulation-doped FET (1982) (8)
- First demonstration of GaAs CMOS (2000) (8)
- The quantum cascade laser. A device based on two-dimensional electronic subbands (1998) (8)
- Metastability and polarization effects in a pn heterojunction device due to deep states (1986) (8)
- Giant Temperature Dependence of the Work Function of GaP (1969) (8)
- Optical free-space communications at middle-infrared wavelengths (2004) (8)
- High power and tunable single-mode quantum cascade lasers (2000) (8)
- Mid-IR Gas Sensors Based on Quasi-CW, Room-Temperature Quantum Cascade Lasers (2000) (8)
- All solid source molecular beam epitaxy growth of GaxIn1−xAsyP1−y/InP lasers using phosphorus and arsenic valved cracking cells (1996) (8)
- Current transport in modulation‐doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions at moderate electric fields (1982) (8)
- Selective lift-off for preferential growth with molecular beam epitaxy (1977) (8)
- Carrier relaxation in InGaAs heterostructures (1994) (8)
- Growth and Properties of III-V Semiconductors by Molecular Beam Epitaxy (1985) (8)
- Quantum transistors and circuits break through the barriers (1991) (8)
- Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy (1993) (8)
- In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells (2001) (7)
- Quench of hot-electron real space transfer by electronic screening (1991) (7)
- Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes (1993) (7)
- Characteristics of an In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy (1982) (7)
- Far-Infrared and Ultra-High-Speed Quantum-Cascade Lasers (2001) (7)
- Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating (1985) (7)
- Generation of tunable far-infrared radiation with a quantum cascade laser. (2002) (7)
- Current state and future challenge in Molecular Beam Epitaxy (MBE) research (1989) (7)
- Evaluation of Thermal Crosstalk in Quantum Cascade Laser Arrays (2007) (7)
- Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field (1986) (7)
- Digital transmission link using surface emitting lasers and photoreceivers (1995) (7)
- Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique (1985) (7)
- Optoelectronic picosecond sampling system utilizing a modulated barrier photodiode (1982) (7)
- Inter-band magneto-absorption in a Ga0.47In0.53As-Al0.48In0.52As quantum well (1986) (7)
- High‐speed modulation and nonlinear damping effect in InGaAs/GaAs lasers (1991) (6)
- Picosecond AlxGa1−xAs modulation‐doped optical field‐effect transistor sampling gate (1983) (6)
- InP acoustic cavity phonon spectra probed by Raman scattering (2005) (6)
- High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature (1997) (6)
- Investigation of Negative Differential Resistance Phenomena in Gas b/AlS b/InAs/GaS b/AlS b/InAs Structures (1994) (6)
- Properties of Au/W/GaAs Schottky barriers (1980) (6)
- Surface-plasmon quantum cascade microlasers with highly deformed resonators (2006) (6)
- Al0.3Ga0.7P0.01As0.99 GaAs laser heterostructures grown by molecular beam epitaxy (1982) (6)
- Measurements of thermoelectric power in two-dimensional systems (1986) (6)
- The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure (1992) (6)
- Pollutant emission monitoring using QC laser-based mid-IR sensors (2001) (6)
- Dry etching of GaAs and AlGaAs by Cl2 in molecular beam epitaxy system (1993) (6)
- Electronic Quarter-Wave Stacks and Bragg Reflectors: Physics of Localized Continuum States in Quantum Semiconductor Structures (1994) (6)
- Channeling at the crystal-crystal interface: Al on GaAs (001) (1981) (6)
- High Frequency Modulation And Efficient Fiber Coupling Of Vertical Cavity Surface Emitting Lasiers (1990) (6)
- Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors (1991) (6)
- Internally excited acoustic resonator for photoacoustic trace detection. (2003) (6)
- Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures (1994) (6)
- Selfaligned fibre pigtailed surface emitting lasers on Si submounts (1991) (6)
- Impact ionization and real-space transfer of minority carriers in charge injection transistors (1994) (6)
- Continuous wave operation of long wavelength ( ≃ 11 [micro sign]m) inter-miniband lasers (2000) (6)
- Wet Chemical and Plasma Etching of Ga2O3(Gd2O3). (1997) (6)
- Pseudo-alloy behavior of InAs-GaAs strained-layer superlattices (1986) (5)
- Tin and tellurium doping of InAs using SnTe in molecular beam epitaxy (MBE) (1993) (5)
- InP-based heterostructure bipolar transistors (1989) (5)
- GaAs/AlxGa1−xAs depletion stop phototransistor grown by molecular beam epitaxy (1982) (5)
- Erratum: "Distributed feedback quantum cascade lasers" [Appl. Phys. Lett. 70, 2670 (1997)] (1997) (5)
- Submicron AlGaAs/GaAs heterostructure bipolar transistor with high gain (1989) (5)
- Microwave studies of self-aligned top-collector charge injection transistors (1993) (5)
- 8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth (1993) (5)
- Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs (1997) (5)
- GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes (1990) (5)
- High duty cycle operation of quantum cascade lasers based on graded superlattice active regions (2001) (5)
- Novel quantum cascade devices for long wavelength IR emission (2001) (5)
- Continuous wave operation of λ ~ 19 µm surface-plasmon quantum cascade lasers (2001) (5)
- Spectral and modulation performance of quantum cascade lasers with application to remote sensing (1999) (5)
- Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes (1992) (5)
- Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PNP transistors (1982) (5)
- Hot electron luminescence in In0.53Ga0.47As transistor channel (1995) (5)
- High-speed photodetectors with high saturation for high performance microwave photonic systems (1996) (5)
- Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes (1993) (5)
- Use of hybrid reflectors to achieve low thresholds in all molecular‐beam epitaxy grown vertical cavity surface emitting laser diodes (1990) (5)
- Quantum cascade lasers shape up for trace-gas sensing (2001) (5)
- Quantum cascade lasers with double-quantum-well superlattices (2001) (5)
- Offset channel insulated gate field‐effect transistors (1982) (4)
- Recent results in quantum cascade lasers and intersubband transitions in GaN/AlGaN multiple quantum wells (2002) (4)
- Quantum Hall Effect Experiments Using Ballistic Phonons (1986) (4)
- High power distributed balanced photodetectors with high linearity (1999) (4)
- Cavity ringdown spectroscopy of NO with a cw single frequency quantum cascade laser (2001) (4)
- Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures (1991) (4)
- Resonant tunneling through quantum wells: Physics and device applications (1988) (4)
- Low threshold current transverse junction lasers on semi-insulating substrates by m.b.e. (1980) (4)
- Picosecond response of steady‐state photovoltaic effect in an asymmetrical graded semiconductor superlattice structure (1993) (4)
- Sub-Doppler NICE-OHMS spectroscopy at 8.5 microns using a quantum cascade laser (2002) (4)
- Formation of new energy bands and minigap suppression by hybridization of barrier and well resonances in semiconductor superlattices (1994) (4)
- Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy (1976) (4)
- Studies of the tunneling currents in the InAs/AlSb/GaSb single-barrier interband tunneling diodes grown on GaAs substrates (1991) (4)
- Long wavelength vertical transition quantum cascade lasers operating CW at 110 K (1996) (4)
- Molecular‐beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells (1995) (4)
- Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’ (1980) (4)
- Self-mode-locking in quantum cascade lasers (2000) (4)
- Spectroscopic trace gas detection with pulsed quantum cascade lasers (2002) (4)
- Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy (2001) (4)
- Chapter 1 - Quantum Electron Devices: Physics and Applications (1994) (4)
- Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate (1986) (4)
- Optoelectronic device mapping using differential imaging techniques (1991) (4)
- Abstract: Total reflection x‐ray diffraction studies of the formation and the geometrical structure of Al–Ge(100) interfaces (1979) (3)
- Quantum cascade photonic-crystal microlasers (2004) (3)
- Laser action on (2002) (3)
- Preparation of GaAs microwave devices by molecular beam epitaxy (1974) (3)
- Pressure‐induced resonance Raman scattering in Ga1−xInxAs/Ga1−yAlyAs strained quantum‐well structures (1990) (3)
- Absence of relaxation oscillation in quantum cascade lasers verified by high-frequency modulation (2001) (3)
- Quantum cascade lasers: new resonant tunnelling light sources for the mid-infrared (1996) (3)
- Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors (1991) (3)
- Nonlinear Optics of Intersubband Transitions in AlInas/GaInAs Coupled Quantum Wells: Second Harmonic Generation and Resonant Stark Tuning of χ 2ω (2) (1992) (3)
- Noise characteristics of InP-based HBTs (1995) (3)
- Realization of a photovoltaic transistor based on a steady‐state internal polarization effect in asymmetric semiconductor superlattices (1991) (3)
- Performance characteristics of In0.2Ga0.8As/GaAs multiquantum‐well lasers (1990) (3)
- Midinfrared electroluminescence in quantum cascade structures with InP/InGaAs active regions (2003) (3)
- Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy (1986) (3)
- Interband tunneling between valence‐band and conduction‐band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple‐barrier structure (1992) (3)
- Resonant Tunneling: Physics, New Transistors And Superlattice Devices (1987) (3)
- Charge injection frequency multiplier (1992) (3)
- Controlled environment processing for semiconductors: a factory-in-a-bottle (a lean manufacturing alternative) (1991) (3)
- Device fabrication by molecular-beam epitaxy (1975) (3)
- The (InGa)As-(InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field (1990) (3)
- Importance of the microscopic effects on the linewidth enhancement factor of quantum cascade lasers (2013) (3)
- Y-branch optical coupler monolithically integrated with DFB quantum cascade lasers (2005) (3)
- Active mode locking of broadband quantum cascade lasers (2004) (3)
- Summary Abstract: Light scattering determination of band offsets in GaAs–InxGa1−xAs quantum wells (1987) (3)
- New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared (1993) (3)
- Chapter 2 Quantum Interference Effects in Intersubband Transitions (1999) (3)
- Photonic materials and processing (1990) (3)
- III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric (1997) (3)
- Quantum cascade photonic crystal surface emitting injection laser (2003) (3)
- Single-Mode Tunable Quantum Cascade Lasers in the Spectral Range of the CO Laser at - m (2000) (3)
- Effective mass filtering: New quantum photoconductivity in superlattices (1986) (3)
- Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistors (1989) (3)
- Microwave performance of top-collector charge injection transistors on InP substrates (1994) (3)
- The Advantage of Molecular-Beam Epitaxy for Device Applications (1985) (3)
- Physics and New Device Applications of Resonant Tunneling in Quantum Well Heterostructures (1987) (3)
- Supporting Online Material Quantum Cascade Surface-Emitting Photonic-Crystal Laser (2003) (3)
- Dynamic switch logic — A new concept for digital optical logic using DOES devices (1985) (3)
- Summary Abstract: New quantum transport phenomena and superlattice devices in molecular beam epitaxially grown AlInAs/GaInAs heterostructures (1986) (2)
- In0.68Ga0.32As∕Al0.64In0.36As∕InP 4.5μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy (2007) (2)
- Sequential versus coherent tunneling through double barrier diodes investigated by calibrated measurement of charge accumulation (1990) (2)
- Modulation‐doped Al0.48In0.52As/Ga0.47In0.53As photodetector prepared by molecular beam epitaxy (1984) (2)
- Long Wavelength Photoluminescence Of InAs1_xSbx (0 (1988) (2)
- Trace gas detection in ambient air with cw and pulsed QC lasers (2000) (2)
- CHARACTERIZATION OF DISTRIBUTED-FEEDBACK QUANTUM-CASCADE (QC) LASERS (1998) (2)
- Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates (1991) (2)
- Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step (1994) (2)
- Travelling wave distributed photodetectors with backward wave cancellation for improved AC efficiency (2002) (2)
- Forward delay in scaled Al0.48In0.52As/In0.53Ga0.47As heterojunction bipolar transistors (1993) (2)
- Fabrication methods for a quantum cascade photonic crystal surface emitting laser (2003) (2)
- 10 Gbit/s D flipflop using AlInAs/InGaAs (1991) (2)
- High transconductance AllnAs/InGaAs superlattice channel heterojunction fet (1990) (2)
- Long Wavelength Metal-semiconductor-metal Photodiodes With Transparent Cadmium Tin Oxide Schottky Contacts (1994) (2)
- Reduction of surface recombination current with an oxygen‐doped Al0.5Ga0.5As surface layer on n‐type GaAs (1979) (2)
- Electrical Properties of Undoped and SnTe-Doped GaxIn1-xSb Molecular-Beam-Epitaxially Grown on GaAs (1995) (2)
- Recent progress in nonlinear quantum cascade lasers (2005) (2)
- Interband tunneling through a heavy hole state (1993) (2)
- Resonant tunneling electron injection in quantum cascade laser structures (1998) (2)
- Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis (1998) (2)
- Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE (1995) (2)
- Photoluminescence spectra of doping superlattices (1986) (2)
- High performance quantum cascade lasers with superlattice active regions (1999) (2)
- Single-mode, tunable quantum cascade distributed feedback (QC-DFB) lasers between 4.6 and 10 /spl mu/m wavelength (2000) (2)
- High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure (1991) (2)
- In 0 , 53 Ga 0 . 47 As pi-n photodiodes with transparent cadmium tin oxide contacts (1999) (2)
- Electrical Characterization of Defects in GaAs Grown on Si by MBE (1987) (2)
- High-power, continuous-wave, current-tunable, single-mode quantum-cascade distributed-feedback lasers at lambda - 5.2 and lambda - 7.95 mum. (2000) (2)
- Superlattice quantum cascade lasers (1999) (2)
- Continuous-wave quantum cascade lasers in the 4- to 10-um wavelength region (1996) (2)
- Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step (1993) (2)
- An overview of epitaxial GaAs on Si technology (1987) (2)
- Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes (1997) (2)
- Molecular beam epitaxial layer structures for integrated optics (1976) (1)
- Room Temperature, Mid-Infrared Quantum Cascade Lasers (1996) (1)
- Erratum: ‘‘Continuous wave operation of a vertical transition quantum cascade laser above T=80 K’’ [Appl. Phys. Lett. 67, 3057 (1995)] (1996) (1)
- Resonant tunnelling electron spectroscopy (1987) (1)
- A review of molecular beam epitaxy for optoelectronic applications (1975) (1)
- Improved molecular beam epitaxial growth of Al x Ga 1 - x As/GaAs high-radiance LED's for optical communications (1981) (1)
- Applied Physics B Lasers and Optics Spectroscopic detection of biological NO with a quantum cascade laser (1)
- Long wavelength quantum cascade lasers (1999) (1)
- Quantum-cascade lasers with heterogeneous cascades: Multiple-wavelength operation (2001) (1)
- Molecular beam epitaxy: A technique for growth of GaAs-Al x Ga 1-x As heterostructure lasers (1974) (1)
- Continuous Wave Operation of Quantum Cascade Lasers at 8.15 µm (1995) (1)
- Microlasers with Chaotic Resonators and Bow-tie Lasers (1998) (1)
- TA-B8 back-illuminated InGaAs/InP p-i-n photodiodes prepared by molecular-beam epitaxy (1980) (1)
- Electroabsorption Al0.48In0.52As p-i-n avalanche photodiodes grown by molecular beam epitaxy (1984) (1)
- Distributed balanced photodetectors for high-performance rf photonic systems (1999) (1)
- Unipolar quantum cascade intersubband infrared lasers and LEDs (1995) (1)
- Electrical and optical characteristics of InP grown by MBE using a valved-phosphorus cracking cell (1993) (1)
- Blue/green surface-emitting second-harmonic generators on 〈111〉 GaAs substrate (1991) (1)
- Intersubband transitions in the communications wavelength range (λ~1.55 μm) In GaN/AlGaN multiple quantum wells (2001) (1)
- Quantum cascade semiconductor amplifiers for high power single mode emission at /spl lambda/ = 7.5 /spl mu/m (2002) (1)
- Comparison of Auger recombination in a GaInAs/AlInAs multiple quantum well structure and in bulk GaInAs (1985) (1)
- Direct‐current and radio‐frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels (1990) (1)
- 111-V Compound Semiconductor MOSFETs Using Ga,O,(Gd,O,) As Gate Dielectric (1997) (1)
- Lasing at ~1 µm from In 0.2 Ga 0.8 As/GaAs quantum well surface-emitting resonators with GaAs/AlAs mirrors (1989) (1)
- Long-wavelength (lambda approximately 8-11.5 microm) semiconductor lasers with waveguides based on surface plasmons. (1998) (1)
- Tunable distributed-feedback quantum-cascade lasers for gas-sensing applications (1998) (1)
- Wideband frequency modulation spectroscopy using the quantum cascade laser (1999) (1)
- Laser action by tuning the oscillator (1997) (1)
- Hamiltonian nonseparability and its consequences in semiconductor heterostructures subjected to high longitudinal magnetic fields (1993) (1)
- Recent Developments in III-V Compound Semiconductor Materials and Devices (1985) (1)
- Pound-Drever-Hall frequency stabilization of a quantum-cascade laser to an infrared ro-vibrational molecular resonance (2001) (1)
- Development of mid-infrared NICE-OHMS: ultra-trace chemical detection using quantum-cascade lasers (2001) (1)
- EFFECT OF CONFINEMENT ON ENERGY-DEPENDENT DEPHASING IN HETEROSTRUCTURES (1997) (1)
- Simultaneous suppression of laser relative intensity noise: second- and third-order distortions using a balanced electro-absorption modulator (2001) (1)
- An In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy for field effect transistor applications (1981) (1)
- -5.2 V AlInAs/GaInAs HBT ICs for 10 Gbit/s optical fibre telecommunications (1992) (1)
- Novel photovoltaic transistor directly modulated by steady-state photovoltage in asymmetric superlattices (1991) (1)
- IIIA-2 a new double heterostructure opto-electronic switch—DOES (1985) (1)
- The influence of a two- or three-dimensional electron gas in the emitter of resonant tunnelling structures (1992) (1)
- Optical transmission systems employing vertical cavity surface emitting lasers and monolithically integrated photoreceivers (1994) (1)
- Auger recombination in GaInAs?AlInAs multiple quantum well structure (1985) (1)
- Carrier dynamics and photodetection in charge injection transistors (1996) (1)
- Ion implantation of Si and Be in Al0.48In0.52As (1983) (1)
- Quantum transport in GaInAs-AlInAs heterojunctions (1983) (1)
- Physics and high speed devices (1990) (1)
- ION IMPLANTATION DOPING OF InGaAs AND InAlAs. (1983) (1)
- Pressure-tuned resonance Raman scattering in Ga1-x-InxAs/Ga1-yA1yAs strained layer multiple quatum well structures (1990) (1)
- High-performance, widely tunable, single-mode, mid-infrared distributed feedback quantum cascade lasers (1998) (1)
- (In,Ga)As/(In,Al)As heterojunction lateral PNP transistors (1982) (1)
- Near single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier (1986) (1)
- Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: application to near-infrared intersubband transitions (1.5 - 4.2 μm) (2000) (1)
- AIAA 2001-0789 Infrared Characterization of Particulate and Pollutant Emissions From Gas Turbine Combustors (2001) (1)
- Characteristics of novel graded superlattice high-speed photovoltaic detector (1993) (1)
- Summary Abstract: Negative transconductance resonant tunneling field effect transistors and monolithically integrated resonant tunneling diodes (1988) (1)
- Quantum cascade lasers with a heterogeneous cascade: two- and multiple-wavelength operation (2002) (1)
- Superlattice QC lasers towards the far-infrared (2001) (1)
- A 27 picosecond photodetector with a modulation doped AlxGa1-xAs/GaAs heterostructure (1982) (1)
- Coupling between in-plane and longitudinal motion in resonant tunnelling structures (1993) (1)
- VIA-1 staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification (1984) (1)
- Insulator/GaN Heterostructures of Low Interfacial Density of States (2000) (1)
- High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors (2001) (1)
- Mid-IR room temperature quantum cascade lasers (1997) (1)
- Coupled-Cavity Resonant Passive Mode-locked Solid-State Lasers (1991) (1)
- Structural considerations in the optimal design of surface‐emitting laser diodes (1992) (1)
- Application of balanced detection to absorption measurements with quasi-cw QC lasers (2001) (1)
- Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy (1989) (0)
- RESONANT ZENER TUNNELING OF ELECTRONS ACROSS THE BAND-GAP BETWEEN BOUND STATES IN THE VALENCE- AND CONDUCTION-BAND QUANTUM WELLS IN A MULTIPLE QUANTUM-WELL STRUCTURE (1987) (0)
- Device and System Technologies for Microwave Wireless Applications (1995) (0)
- Multiple wavelength mid-infrared lasers operating on inter-miniband transitions (1998) (0)
- Resonant Tunneling Electron Spectroscopy (1987) (0)
- All solid source molecular beam epitaxy using valved cracking cells (1997) (0)
- Novel high-speed graded superlattice InAlGaAs photovoltaic detector (1993) (0)
- All solid source MBE growth of GaInAsP/InP lasers using phosphorus and arsenic valved cracking cells (1995) (0)
- Quantum cascade Raman laser (2005) (0)
- Junction Lasers Prepared By Molecular Beam Epitaxy Operating Continuously (CW) At A Temperature As High As 100°C (1976) (0)
- Quantum Cascade Distributed Feedback Laser (1997) (0)
- Non-cascaded intersubband injection lasers and scaling with the number of stages in quantum cascade lasers (1999) (0)
- Continuous room-temperature operation of GaAs-Al/sub x/Ga$sub 1$/sub -// sub x/As double-heterostructure lasers prepared by molecular-beam epitaxy (1976) (0)
- Multi-quantum well laser emitting at 1. 5. mu. M layers (1986) (0)
- Growth and device applications using molecular beam epitaxy (1979) (0)
- Quantum cascade lasers and metal waveguides at λ > 20 μm (2002) (0)
- MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures (1991) (0)
- GaN-based intersubband structures and mid-infrared quantum cascade lasers with heterogeneous cascades (2003) (0)
- High-power high-speed velocity-matched distributed photodetectors (1997) (0)
- A depletion stop double base phototransistor: A demonstration of a new transistor structure (1981) (0)
- Short (λ∼3.4μM) and Long (λ∼11.5μM) Wavelength Room Temperature Quantum Cascade Lasers (1998) (0)
- The carrier transport in the GaSb/AiSb/lnAs/GaSb/AlSb/InAs resonant interband tunneling structures (1994) (0)
- Free-space midinfrared optical links using quantum cascade lasers (2003) (0)
- Doping and free-carrier loss in cw all-epitaxial surface-emitting laser diodes (1991) (0)
- Measurement of the r-L separation in Gao.47Ino.s3 As by ultraviolet photoemission (2012) (0)
- High frequency modulation and optical free space video transmission using quantum cascade lasers (2001) (0)
- New high speed long wavelength Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As multiquantum well avalanche photodiodes (1985) (0)
- Integrated optical package for coupling optical fiber with device accompanied by asymmetrical light beam (1993) (0)
- IIA-3 (Al,In)As/(Ga,In)As heterojunction bipolar transistors grown by molecular beam epitaxy (1983) (0)
- Intersubband superlattice light emitting device (2001) (0)
- Quantum cascade lasers based on guided modes at a metal-semiconductor interface (1998) (0)
- Recent developments in quantum cascade lasers (2003) (0)
- Molecular beam epitaxy of GaN/AlGaN multiple quantum wells: Application to near-infrared intersubband transitions (1.5-4.2 /spl mu/m) (2000) (0)
- VIA-5 a modulation-doped Ga0.47In0.53As photoconductive detector for 1.0-1.6µm applications (1983) (0)
- High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs (1990) (0)
- Summary Abstract: Optical investigation of modulation‐doped In0.53Ga0.47As/In0.48Al0.52As multiple quantum well heterostructures (1985) (0)
- Recent results in quantum cascade lasers and applications (2000) (0)
- Photodetector has majority carriers (1982) (0)
- Quantum Cascade Laser Measurements of Stratospheric Methane (CHsub4) and Nitrous Oxide (NSub20) (1999) (0)
- Quantum cascade laser with a vertical transition and an electron Bragg reflector (1995) (0)
- Simultaneous suppression of laserrelative intensity noise, 2nd and 3rd order distortions using abalanced electroabsorption modulator (2001) (0)
- Monolithic Integration of a Photodetector and a Vertical Cavity Surface Emitting Laser (1991) (0)
- Miniband electronic distribution in superlattice quantum cascade structures (2000) (0)
- Digital transmission link using surface-emitting lasers and photoreceivers (1996) (0)
- Experimental investigation of power distribution in distributed balanced photodetectors (1999) (0)
- GENERATION OF MID-INFRARED RADIATION BY IMPACT IONIZATION OF DEEP-CENTERS IN SEMICONDUCTOR STRUCTURES (1996) (0)
- A process for fabricating an integrated optical assembly comprising a waveguide lens for coupling optical fibers with integrated components (1993) (0)
- Observation of negative conductance by sequential resonant tunneling through a one micron thick superlattice (1985) (0)
- A semiconductor device having mis- heterojunction structure (1979) (0)
- Monolithic p-i-n-FET photoreceivers (1994) (0)
- Mid-infrared (λ = 4.8 - 5.5 µm) electric-field tunable intersubband electroluminescent diode (1994) (0)
- Pressure-induced resonance raman scattering in Ga1-xInxAs/Ga1-yAlyAs multiple quantum well strucitjres (1991) (0)
- Spectral noise measurements of a 8.5 micron quantum cascade laser with implications for stabilization to 1 kHz (1999) (0)
- Experimental Demonstration of a BalancedElectroabsorption Modulator (2000) (0)
- Sensitive absorption spectroscopy using the quantum cascade laser (2001) (0)
- WP-B6 investigation of heterojunctions for MIS devices with insulating AlxGa1-xAs on n-type GaAs (1978) (0)
- Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures (1988) (0)
- Intersubband transitions in the communications wavelength range (/spl lambda//spl sim/1.55 /spl mu/m) In GaN/AlGaN multiple quantum wells (2001) (0)
- CORRIGENDUM: Subband-Landau level coupling in a two-dimensional electron gas in tilted magnetic fields (1986) (0)
- Transport properties of InGaAs/InAlAs quantum wells (2000) (0)
- Vb-4 Multiple-valued Logic Application of a Triple Well Res- Onant Tunneling Vb-5 Experimental Analysis of Resonant-tunneling Hot- Electron Transistors Operated at Room Temperature- Vb-6 Negative Differential Resistance in Aias/niai/aias Metal Base Quantum Wells: toward a Resonant Tunneling (0)
- IV-3 GaAs-Al x Ga 1-x As double-heterostructure lasers prepared by molecular-beam epitaxy (1974) (0)
- Solid Source Molecular Beam Epitaxy of GaxInl-xAsyP1-y Materials for 1.3 pm Lasers (1998) (0)
- Self mode-locked quantum cascade laser (2001) (0)
- Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures (1997) (0)
- Molecular Beam Epitaxy (MBE) for High Speed Devices (1987) (0)
- High-Frequency Submicrometer AlOa4* Iw.52 As/ Ga, 47 As Heterostructure Bipolar Transistors (1989) (0)
- Selectively-doped Al0.48In0.52As/Ga0.47In0.52As heterostructure transistors (1982) (0)
- Transverse magnetic field effects on the resonant tunneling current (1991) (0)
- The influence of InAs well thickness on the negative differential resistance behaviors in GaSb/AlSb/InAs/GaSb/AlSb/InAs double barrier structures (1992) (0)
- Sequential vs. coherent tunneling in double barrier diodes investigated by differential absorption spectroscopy (1990) (0)
- Gain-S witched GaAs Vertical-Cavity Surface-Emitting Lasers (1993) (0)
- Beryllium doping in Ga 0 . 47 In 0 . 53 As and Al 0 . 48 In 0 . 52 As grown by molecularbeam epitaxy (2012) (0)
- Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors (1992) (0)
- Modulation of the Optical Absorption by Electric-Field-Induced Quantum Interference in Coupled Quantum Wells (1994) (0)
- Electron Transport in Double Barrier Diodes Studied by Differential Absorption Spectroscopy (1992) (0)
- Negative Differential Conductance by Field-Induced Localization and Scattering-Controlled Resonances in Superlattices (1990) (0)
- Long wavelength, wide spectral response (0.8-1.8µm) Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes and Al0.48In0.52As electroabsorption PIN avalanche detectors grown by molecular beam epitaxy (1983) (0)
- IIIA-8 measurements of the conduction band discontinuity of MBE-grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profiling (1983) (0)
- Continuous wave operation of quantum cascade laser array at T=77K (2005) (0)
- The quantized Hall insulator in the presence of resistance fluctuations (2002) (0)
- New Ga0.47In0.53As sheet-charge field-effect transistor for long-wavelength optoelectronic integration (1983) (0)
- FIR quantum cascade lasers at λ>20 μm and THz emitters at λ=80 μm (2002) (0)
- Enhancement of second harmonic generation through phase-matching in quantum cascade lasers (2003) (0)
- Ultrabroadband quantum cascade lasers (2002) (0)
- Vertical-injection top-emitting quantum-well lasers using transparent conductive metal-oxide contacts (1991) (0)
- Sensitive detection of NO in exhaust gas with a frequency-modulated, distributed-feedback, quantum-cascade laser (2001) (0)
- A method of maintaining a clean atommaessig substratflaeche a compound of Group III (a) -v (a) (1975) (0)
- Electric-field-tunable laser emission by photon-assisted tunneling (1997) (0)
- The quantized Hall effect in the presence of resistance fluctuations (2002) (0)
- VB-4 insulated gate field effect transistors with the conduction channel placed at semiconductor-semiconductor interfaces (1982) (0)
- Quantitative gas sensing by backscatter-absorption measurements of a pseudorandom code modulated lambda ~ 8-microm quantum cascade laser. (2000) (0)
- Molecular Beam Epitaxy (MBE) of Quantum Devices (2001) (0)
- Long-wave semiconductor laser with surface plasmon waveguide (1999) (0)
- Insulating Layers by MBE (1985) (0)
- Laser action on "Scar"-modes and KAM-transition to chaos in semiconductor diode lasers with deformed resonators (2002) (0)
- New quantum well long-wavelength ( lambda =10 mu m) detectors and novel superlattice transport physics (1988) (0)
- High Speed InP-Based ICs for a Fiber-to-Microwave Link (1996) (0)
- Linear and nonlinear absorption of room-temperature excitons in GaInAs/AlInAs quantum wells (1985) (0)
- Transport in Superlattices: Observation of Negative Differential Conductance by Field Induced Localization and Its Equivalence with the Esaki-Tsu Mechanism; Scattering Controlled Resonances in Superlattices (1991) (0)
- Masked Molecular Beam Epitaxy (1978) (0)
- Application and Properties of Molecular-Beam Epitaxial Layers for Optoelectronic Devices (1976) (0)
- A 100 GHz Gain-Bandwidth Product Avalanche Photodiode ( APD ) with InAlAs/InGaAs Multi Quantum Well ( MQW ) (1997) (0)
- IVA-1 new low dark current high-speed Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode by molecular-beam epitaxy for long wavelength fiber optic communication systems (1984) (0)
- IIB-6 picosecond bias-free photodetectors (1982) (0)
- Improved nonlinear active region designs for second-harmonic light generation in quantum cascade lasers (2005) (0)
- Structural Studies of an InAs-GaAs Superlattice Alloy (1985) (0)
- Growth and characteristics of high optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP by MBE using solid phosphorus and arsenic valved cracking cells (1994) (0)
- Molecular beam epitaxy growth of high performance AlGaAs/GaAs quantum well top emitting lasers (1992) (0)
- Multiwavelength and supercontinuum quantum cascade lasers (2002) (0)
- Frequency stabilization, line narrowing and modulation studies in quantum cascade lasers (2001) (0)
- New transport phenomena in a ballistic heterostructure field‐effect transistor (1993) (0)
- Eight-element-linear-array monolithic P-I-N-MODFET photoreceivers using molecular-beam epitaxial regrowth (1993) (0)
- Integrated photoreceiver array using molecular beam epitaxial regrowth (1992) (0)
- Distributed balanced photodetector for RF photonic applications (2000) (0)
- Relative frequency stabilization of two 8.5-micron quantum cascade lasers to 5.6 Hz (2002) (0)
- Device uniformity in strained-layer MQW modulators (1992) (0)
- Pseudo-random code-based differential absorption LIDAR in the LWIR spectral region (2001) (0)
- Solid source molecular beam epitaxy of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ materials for 1.3 /spl mu/m lasers (1998) (0)
- Novel high-speed photovoltaic detector based on asymmetric superlat-tice structures (1992) (0)
- VB-3 In0.47Ga0.53As FETs with insulator-assisted Schottky gates (1982) (0)
- QuasiSchottky barrier diode on nGa 0 . 47 In 0 . 53 As using a fully depleted p + Ga 0 . 47 In 0 . 53 As layer grown by molecular beam epitaxy (2012) (0)
- Multiple quantum-well optical modulators for solid-state lasers (1992) (0)
- Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells (1987) (0)
- Low Threshold Current Transverse-Junction Lasers on Semi-Insulating Substrates by Molecular Beam Epitaxy (MBE) (1980) (0)
- Recent advances in optoelectronic components for systems applications (1990) (0)
- Ultrafast intersubband electron relaxation at /spl sim/1.55 /spl mu/m wavelength in GaN/AlGaN quantum well structures (2002) (0)
- 10-GHz bandwidth monolithic pin-MODFET photoreceiver (1993) (0)
- Measurement of the rL separation in Gao . 47 Ino . s 3 As by ultraviolet photoemission (2012) (0)
- Resonant Multiphoton Electron Emission and Stark-Tuned Third Harmonic Generation in Coupled Quantum Wells (1992) (0)
- Laser Optics: Ultrabroadband QuantumCascade Lasers (2002) (0)
- WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors (1978) (0)
- Pressure Investigation of Tunneling in an InAlAs-InGaAs Double Barrier Structure (1991) (0)
- Two-dimensional electron gas in InGaAs/lnAlAs quantum wells (2006) (0)
- Superlattice quantum cascade lasers operating at very long wavelengths (/spl lambda//spl ap/17 /spl mu/m) (1999) (0)
- A portable, LN2-free, multi-chemical sensor based upon mid-infrared laser absorption spectroscopy (2001) (0)
- Electrical beam steering of quantum cascade lasers (2004) (0)
- Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ~1.55-μm wavelength (2004) (0)
- New 1.3-1.6-μm low-voltage low-dark- current p+in+in− avalanche detector with separated absorption and multiplication regions grown by molecular beam epitaxy (1984) (0)
- Far-IR quantum cascade lasers at 21.5 /spl mu/m wavelength (2001) (0)
- Cyclotron resonance and electron-phonon couplingTwo-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices (1984) (0)
- Ultrafast intersubband electron relaxation in GaN/AlGaN single and coupled double quantum well structures (2002) (0)
- The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure (1991) (0)
- Far-IR quantum cascade lasers at 21.5 m wavelength (2001) (0)
- Narrow spectral emission and high output efficiencies from resonant cavity light-emitting diodes at 0.94-µm wavelength (1993) (0)
- IVA-1 giant amplification of the photocurrent in a superlattice by effective mass filtering (1985) (0)
- Measurement of the T-L separation in GaInAs by ultraviolet photoemission spectroscopy (1982) (0)
- New optical absorption and photocurrent reversal phenomena induced by localized continuum resonances in quantum well heterostructures (1994) (0)
- Integrated-optical receivers and transmitters for use in wide-bandwidth optical transmission systems (1994) (0)
- Tunable sources and quantum cascade lasers in the mid-IR (1997) (0)
- High performance long-wavelength velocity-matched distributed photodetectors for RF fiber optic links (1998) (0)
- Carrier Dynamics in InGaAs: Quantum Wells vs.Bulk (1994) (0)
- Gain switching and active mode locking of mid-infrared quantum cascade lasers (2000) (0)
- Summary Abstract: Growth and characterization of an InAs–GaAs superlattice alloy (1986) (0)
- Ultrafast intersubband transitions at lambda ~ 1.35 - 1.55 um in GaN/AlGaN multiple quantum wells (2002) (0)
- Monolithic integration of a photodetector and a vertical-cavity surface-emitting laser (1991) (0)
- Picosecond InAlGaAs Photovoltaic Detector with a Graded Superlattice Structure (1993) (0)
- Quantum Cascade Whispering Gallery Lasers (1997) (0)
- I-4 recent advances in molecular beam epitaxy (MBE) (1981) (0)
- Monolithic PIN-FET photoreceivers (1993) (0)
- Array operation of GaAs/AlGaAs vertical cavity surface emitting lasers (1990) (0)
- QUANTUM HALL TRANSITIONS IN MESOSCOPIC SAMPLES (2004) (0)
- Impact Ionization across the band-edge discontinuity in superlattices and its applications to solid-state photomultipliers (1986) (0)
- Collector-up light-emitting charge injection transistors in n-lnGaAs / lnAIAs / plllnGaAs and n-lnGaAs / lnP / p-InGaAs heterostructures (1999) (0)
- IIA-2 a high sensitivity majority carrier photodetector (1981) (0)
- PERFORMANCE OF A Ga//0//. //4//7In//0//. //5//3As/Al//0//. //4//8 In//0//. //5//2As MODULATION-DOPED PHOTOCONDUCTIVE DETECTOR. (1984) (0)
- Quantum Cascade Raman Injection Laser for Mid/Far-Infrared Generation (2005) (0)
- Materials and performance issues in multiple quantum-well modulators for solid-state lasers (1991) (0)
- RF photonic systems (2014) (0)
- Mid-infrared, single-mode, continuously tunable Quantum Cascade distributed feedback lasers (2001) (0)
- Nonlinear spectroscopy of a GaInAs/AllnAs quantum-well structure inside an extended cavity semiconductor laser (1986) (0)
- The growth of high purity GaInAs on InP by MBE (1982) (0)
- GaAs-based MOSFETs and methods for preparing (1998) (0)
- Forward delay in scaled Alo.481n,.,,As/ln,,,Ga,4,As heterojunction bipolar transistors (2001) (0)
- Top-collector light-emitting charge injection transistors and logic elements in n-InGaAs/ InAlAs/p-InGaAs and n-InGaAs/lnP/p-InGaAs heterostructures (1993) (0)
- Characterization of intensity and frequency fluctuations of mid-infrared quantum cascade lasers (2001) (0)
- Silicon doping and impurity profiles in Ga 0 . 47 In 0 . 53 As and Al 0 . 48 In 0 . 52 As grown by molecular beam epitaxy (2012) (0)
- NOISE CHARACTERISTICS OF InP-BASED HETEROSTRUCTURE BIPOLAR TRANSISTORS (1994) (0)
- Single frequency quantumcascade-DFB laser based spectrometer for trace gas detection (2000) (0)
- Second harmonic generation in AlInAs/GaInAs asymmetric coupled quantum wells (2020) (0)
- DIRECT RESONANT INTERBAND TUNNELING INTO EXCITON STATES IN MULTIQUANTUM WELL STRUCTURES (1999) (0)
- Calibrated determination of charge distribution in resonant tunneling structures by differential absorption spectroscopy (1990) (0)
- Mid-IR intersubband quantum cascade lasers (1998) (0)
- Planar-doped n-type InAlAs/InGaAs MODFETs on InP (1993) (0)
- High-speed high-power traveling wave distributed p-i-n photodetectors with monolithic parallel feed (2002) (0)
- Hole-assisted Zener magnetotunneling in heterostructures (1998) (0)
- Supercontinuum quantum cascade laser (2002) (0)
- Long-wavelength (9-1 1 pm) Quantum Cascade Lasers (1996) (0)
- High Temperature, High Power Mid-Infrared Quantum Cascade Lasers at λ = 5,2 and 8µm (1996) (0)
- Performance of a Ga0.47In0.53As/Al0.48In0.52As modulation-doped photoconductive detector (1984) (0)
- Solid source MBE growth of lattice matched GaInAsP with phosphorus and arsenic valved cracking cells (1994) (0)
- Removing long tails from photoconductive detectors: A new minority hole sinked photodetector (1983) (0)
- Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers (1995) (0)
- GaAs field effect transistors prepared on lattice-mismatched InP substrates for monolithic optoelectronic integration (1984) (0)
- A method of manufacturing a semiconductor device in the molecular beam epitaxy (1974) (0)
- Intra-Center Mid-Infrared Electroluminescence from Impact Ionization of Fe-Deep Levels in InP Based Structures (1996) (0)
- Room temperature cw vertical cavity surface emitting GaAs injection lasers (1990) (0)
- Temporal resolution of an Al/x/Ga/1-x/As/GaAs bias-free photodetector (1982) (0)
- Defense Technical Information Center Compilation Part Notice ADP 013144 (0)
- Enhanced charge accumulation in asymmetric double barrier diodes and sequential tunneling in two resonance double barrier diodes (1990) (0)
- Intersubband optical absorption and electron relaxation rates in GaN/AlGaN coupled double quantum wells (2001) (0)
- Mid-infrared integrated cavity absorption spectroscopy for chemical sensing (2001) (0)
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