Akihiko Kikuchi
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Electrical Engineering
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Engineering
Akihiko Kikuchi's Degrees
- PhD Electrical Engineering University of Tokyo
- Masters Electrical Engineering University of Tokyo
- Bachelors Electrical Engineering University of Tokyo
Why Is Akihiko Kikuchi Influential?
(Suggest an Edit or Addition)Akihiko Kikuchi's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate (2004) (346)
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate (2010) (338)
- Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy (1997) (334)
- Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays (2009) (247)
- Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm (2002) (167)
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns (2008) (161)
- AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy (2002) (120)
- InGaN/GaN nanocolumn LEDs emitting from blue to red (2007) (103)
- Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well (2010) (100)
- Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks (1998) (93)
- Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns (2006) (89)
- Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching (2010) (86)
- Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells (2004) (84)
- Random laser action in GaN nanocolumns (2010) (77)
- Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy (2007) (74)
- Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission. (2009) (74)
- Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers (1991) (71)
- Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy (2008) (70)
- Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source (1993) (65)
- GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy (2008) (59)
- Stimulated emission from GaN nanocolumns (2004) (52)
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy (2001) (45)
- Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy (2008) (44)
- Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk (2009) (40)
- Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy (2008) (39)
- Optically Pumped Green (530–560 nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays (2011) (39)
- Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy (2010) (38)
- Growth and characterization of InGaN/GaN nanocolumn LED (2006) (38)
- Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy (2000) (35)
- Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy (2007) (31)
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers (2000) (31)
- Intersubband relaxation dynamics inGaN∕AlNmultiple quantum wells studied by two-color pump-probe experiments (2005) (31)
- Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates (2002) (31)
- Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates (1995) (30)
- Selective growth of GaN nanocolumns by Al thin layer on substrate (2007) (30)
- Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices (2002) (28)
- Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy (2002) (27)
- High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy (2006) (25)
- AlGaN Resonant Tunneling Diodes Grown by rf-MBE (2001) (23)
- 2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy (1999) (22)
- 600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy (1993) (21)
- High‐optical‐quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas‐source molecular‐beam epitaxy (1989) (20)
- High speed growth of device quality GaN and InGaN by RF-MBE (1999) (20)
- Refractive index measurements of MgZnCdSe II–VI compound semiconductors grown on InP substrates and fabrications of 500–600 nm range MgZnCdSe distributed Bragg reflectors (1997) (18)
- Continuous-Wave (CW) operation of GaInP-AlGaInP visible compressively strained multiple quantum-wire (CS-WQWR) lasers (1995) (18)
- Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf‐plasma‐assisted molecular‐beam epitaxy (2010) (18)
- Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy (1990) (18)
- Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth (2015) (17)
- Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers (1992) (17)
- Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)] (2003) (17)
- Light localization characteristics in a random configuration of dielectric cylindrical columns (2010) (17)
- Visible Light Emitting Diode with ZnCdSe/BeZnTe Superlattices as an Active Layer and MgSe/BeZnTe Superlattices as a p‐Cladding Layer (2002) (16)
- Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe‐based visible optical devices (2004) (16)
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source (1995) (16)
- Growth and characterization of novel MgSe/ZnCdSe superlattice quasi-quaternaries on InP substrates (1998) (14)
- Gas source molecular beam epitaxial growth and characterization of 600–660 nm GaInP/AlInP double-heterostructure lasers (1993) (13)
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary on InP Substrates and Fabrication of Light Emitting Diodes (1999) (13)
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy (2000) (13)
- 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE) (1991) (12)
- Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns (2009) (12)
- High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy (1998) (12)
- Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer (2001) (12)
- Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy (1990) (12)
- Low‐temperature photoluminescence studies of In‐rich InAlN nanocolumns (2012) (11)
- Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE (2002) (11)
- Effect of MgZnO-bilayer/BA-CH3 combination interlayer on emission characteristics of MoO3/F8BT/ZnO hybrid light emitting diodes fabricated on ZnO/Ag/ZnO transparent cathode (2013) (11)
- Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System (2001) (11)
- Low (2.0 kA/cm/sup 2/) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off (1991) (11)
- Novel ZnCdSeMgZnCdSe compound system grown on InP substrates by MBE and theoretical investigation of 550–640 nm range ZnCdSeMgZnCdSe lasers (1996) (11)
- Growth and Characterization of ZnCdSe/BeZnTe II–VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices (2001) (11)
- Surface Phonons Studied by Raman Scattering in GaN Nanostructures (2017) (11)
- Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer (2001) (11)
- Raman Scattering in GaN Nanocolumns and GaN/AlN Multiple Quantum Disk Nanocolumns (2006) (10)
- Photoluminescence of exciton and biexciton in GaN nanocolumns (2008) (10)
- Growth and characterization of InGaN double heterostructures for optical devices at 1.5–1.7 mm communication wavelengths (2004) (10)
- Thermal durability of AZO/Ag(Al)/AZO transparent conductive films (2016) (10)
- Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AlN multiple quantum disk nanocolumns (2008) (10)
- Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy (2011) (9)
- Proposal of a novel BeZnSeTe quaternary for II‐VI middle range visible light emitting devices on InP substrates (2004) (9)
- Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures (2013) (9)
- Intersubband Absorption at? ? 1.2-1.6 ?m in GaN/AlN Multiple Quantum Wells Grown by rf-Plasma Molecular Beam Epitaxy (2002) (9)
- Development of Ta-Matrix ${\rm Nb}_{3}{\rm Al}$ Wire for Next-Generation Accelerator Magnet (2009) (8)
- Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy (2008) (8)
- Single mode emission and non-stochastic laser system based on disordered point-sized structures: toward a tuneable random laser. (2011) (8)
- ZnCdTe/ZnTe Light Emitting Diodes with MgSeTe/ZnTe Superlattice Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy (2002) (8)
- Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source (1995) (8)
- Photoluminescence properties of selectively grown InN microcrystals (2012) (8)
- Whispering gallery mode in periodic InGaN‐based hexagonal nanoring arrays grown by rf‐MBE using Ti‐mask selective‐area growth (2010) (7)
- Self-organization mechanism of GalnP quantum wires in (GaP)m/(lnP)m short-period binary superlattices for GalnP/AllnP multi-quantum-wire (MQWR) lasers (1996) (7)
- Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates (2006) (7)
- Aging characteristics of II–VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates (2004) (7)
- Characterization of hydrogen environment anisotropic thermal etching and application to GaN nanostructure fabrication (2015) (7)
- Energy- and density-dependent dynamics of photoexcited carriers in InN films (2009) (6)
- Novel II–VI Light Emitting Diodes Fabricated on InP Substrates Applying Wide‐Gap and Highly p‐Dopable BeZnTe for p‐Cladding Layers (2000) (6)
- Effect of the nozzle tip’s geometrical shape on electrospray deposition of organic thin films (2017) (6)
- Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers (2002) (6)
- Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays (2010) (6)
- Room temperature operation of 1.55µm wavelength-range GaN/AlN quantum well intersubband photodetectors (2005) (6)
- Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxy (2006) (6)
- Fabrication of InGaN/GaN MQW nano‐LEDs by hydrogen‐environment anisotropic thermal etching (2017) (5)
- Development of yellow‐green LEDs and LDs using MgZnCdSe‐BeZnTe superlattices on InP substrates by MBE (2004) (5)
- Evaluation of bandgap energy and carrier density of InN nanocolumns (2009) (5)
- InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy (1999) (5)
- Fabrication of NPB/Alq3 small‐molecule multilayer structures with suppressed interface mixing by multi‐jet mode electrospray deposition (2017) (5)
- Deposition characteristics of small-molecule CBP:PBD:TPD:Ir(mppy)3 organic thin films using a modified electrospray deposition method (2016) (5)
- MBE growth of novel MgSe/ZnSeTe : : N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes (1999) (5)
- MgZnCdSe/BeZnTe Visible Light-Emitting Diode with Longer Device Lifetime over 1000 h (2002) (5)
- Ti‐mask selective‐area growth of GaN nanorings by RF‐plasma‐assisted molecular‐beam epitaxy (2009) (4)
- Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors (2016) (4)
- Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy (2008) (4)
- Fabrication of CH3NH3PbBr3‐Based Perovskite Single‐Crystal Arrays by Spin‐Coating Method Using Hydrophobic Patterned Substrate (2019) (4)
- Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy (1998) (4)
- Electroluminescence Characteristics of Inorganic (p-GaN/MgO)-Organic (Alq 3 ) Hybrid p-n Junction Light Emitting Diodes (2011) (4)
- Optical properties of InGaN/GaN nanocolumns in yellow‐to‐red region (2012) (4)
- Analysis of threshold current density of CdZnSe/ZnSSe strained well lasers (1993) (4)
- Fundamental optical properties of InN grown by epitaxial lateral overgrowth method (2013) (3)
- Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns (2013) (3)
- Intersubband photonic devices by group-III nitrides (2007) (3)
- Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates (1998) (3)
- Two‐photon absorption induced anti‐Stokes emission in single InGaN/GAN quantum‐dot‐like objects (2013) (3)
- Substrate misorientation effects in AlGaInP lasers and crystals grown by gas source molecular beam epitaxy (1993) (3)
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells (1998) (3)
- High p-type doping level of MgZnCdSe on InP substrates by inserting ZnTe thin layers (2006) (3)
- Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers (2002) (3)
- Anderson localization of light in two-dimensional random arrays of semiconductor nanocolumns (2013) (3)
- Self-Organized GaN/AlN Superlattice Nanocolumn Crystals Grown by RF-MBE (2004) (3)
- High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction (2016) (3)
- Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE (1998) (2)
- Breakdown of the Selection Rule of Raman Spectra in a Single GaN Nanocolumn (2012) (2)
- Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy (2002) (2)
- Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn (2009) (2)
- MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates (2001) (2)
- Ultrafast intersubband relaxation in GaN/AlN multiple quantum wells (2004) (2)
- Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxy (2000) (2)
- Anderson localization of light in a random configuration of semiconductor nanocolumns (2011) (1)
- Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice (1994) (1)
- Photo-excited carrier relaxation dynamics in InN films (2009) (1)
- Exciton and biexciton properties in GaN nanocolumn: dependence on morphology and diameter (2009) (1)
- All‐optical modulation using intersubband transitions at 1.55 μm in GaN/AlN multiple quantum well (2005) (1)
- Micromirror arrays to assess luminescent nano-objects. (2011) (1)
- Proposal of Organic Single Crystal Growth Method Using Electrospray Deposition and Thin‐Film Ionic Liquid (2017) (1)
- Raman Scattering from a Surface Phonon in GaN Nanowalls and Regularly-Arrayed GaN Nanocolumns (2011) (1)
- Novel ZnCdSe/BeZnTe type-II superlattice structure grown on InP substrates by MBE (2001) (1)
- Highly efficient blue to red emissions of InGaN/GaN nano-disks integrated into GaN nanocolumns (2005) (1)
- Anderson localization of light in a random configuration of nanocolumns (2009) (1)
- Effect of Al doping in the Ag layer of MgZnO/Ag/MgZnO dielectric/metal/dielectric UV–visible transparent conductive films (2016) (1)
- Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching. (2017) (1)
- Lasing operation of ZnTe based yellow-green laser diodes (2005) (1)
- Fabrication of CH3NH3PbBr3 Based Perovskite Single Crystal Arrays by Spin-coating Method Using Hydrophobic Patterned Substrate (2019) (1)
- Second harmonic generation from photonic structured GaN nanowalls (2009) (1)
- Effect of (GaP)/sub m//(InP)/sub m/ short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers (1995) (1)
- Suppression effect of hydrogen-assisted thermal decomposition of GaN by ultrathin SiO 2 (2018) (0)
- Ultrafast Intersubband Relaxation Dynamics and Coherent Nonlinearity in Bulk and Waveguide structures of GaN/AlN Multiple Quantum Wells (2007) (0)
- Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film (2017) (0)
- Deposition characteristics of small molecule organic thin films by nanomist deposition (2016) (0)
- High optical quality InGaN/GaN multiple quantum disks on GaN nano-columns grown by rf-plasma assisted molecular beam epitaxy (2003) (0)
- Surface passivation effect by saturated ozone water treatment on InGaN/GaN nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE) (2019) (0)
- Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy. (2008) (0)
- Fabrication of GaN topological photonic crystal membranes in the visible wavelength region by a combination process of HEATE and AlInN wet etching (2022) (0)
- Ultrafine (≤10nm) InGaN Quantum Structures Fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE) (2016) (0)
- High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication (2003) (0)
- Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns (2007) (0)
- Foramation of perovskite nanoparticles by electrospray depositon (2018) (0)
- Optical properties in InGaN / GaN MQW heated in hydrogen environment and Fabrication of nano-structures by hydrogen environment anisotropic thermal etching (HEATE) (2016) (0)
- Study on Thermal Durability of AZO/Ag(Al)/AZO Transparent Conductive Film (2015) (0)
- Study on nozzle tip geometry for generation of monodisperse droplets by electrospray deposition (2017) (0)
- Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching (2021) (0)
- Fabrication of InGaN / GaN nanostructures by hydrogen atmosphere anisotropic thermal etching (HEATE) method with addition of ammonia gas (2017) (0)
- Fabrication of InGaN/GaN single quantum disk nano LED fabricated by hydrogen environment anisotropic thermal etching (HEATE) technique (2016) (0)
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates (1998) (0)
- Optical Characterization of Co-doped Single Crystal Organic Semiconductor with Emissive and Assist Dopants (2019) (0)
- Yellow(576-nm) laser emission from (GaInP/AlInP)MQW/AlInP double heterostructure at 109 K (1990) (0)
- Fabrication of GaN nano-columns and application for GaN quantum disk (1998) (0)
- C-4-32 Effect of MgZnO Electron Injection Layers on Characteristics of ZnO/F8BT Inorganic-Organic Hybrid Light Emitting Diode (IO-HyLED) (2011) (0)
- Position control of GaN nanocolumns by selective area growth on patterned substrates (2008) (0)
- InGaN-based nanocolumns for green light emitters (2010) (0)
- Effect of Al doping in the Ag thin layer of AMZO/Ag(Al)/AMZO-DMD (2016) (0)
- High Speed Growth and Micro / Quantum Structure Control of III-Nitrides for Device Application by RF - Radical Source Molecular Beam Epitaxy (1998) (0)
- Ultrafast intersubband relaxation at 1.55 /spl mu/m in GaN/AlN MQWs (2003) (0)
- Fabrication of position controlled InGaN/GaN quantum well ultrafine nanopillar fabricated by hydrogen environment anisotropic thermal etching (HEATE) (2017) (0)
- Passivation Effect of Ozone Water Treatment of InGaN/GaN Nanostructures Fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE) (2016) (0)
- Electric Conduction in a Single GaN Nanocolumn (2012) (0)
- Rotation direction of WGM oscillation in hexagonal GaN microdisk (2018) (0)
- Nonlinear susceptibility due to intersubband absorption saturation in GaN/AlN multiple quantum wells (2004) (0)
- Substrate misorientation effects in 660-nm bulk GaInP active layer lasers grown by gas-source molecular beam epitaxy. (1992) (0)
- Light Localization in a Random Configuration of Dielectric Nanocolumns (2010) (0)
- Green region stimulated emission in optically pumped InGaN/GaN MQW nanocolumn arrays of triangular lattice (2010) (0)
- Precise etching technique for InGaN/GaN nanostructure LEDs by combination of saturated ozone water oxidation and buffered oxide etching (2017) (0)
- Deposition properties of small molecular organic thin films by multi-jet mode electrospray deposition (2016) (0)
- InN/InAlN Multiple Quantum Well Nanocolumns Grown on (111) Si Substrates by RF-Plasma Assisted Molecular Beam Epitaxy (2007) (0)
- Nitride-based Nanocolumns and Applications (2011) (0)
- Effect of geometrical shape of nozzle tip on electrospray deposition of organic thin film (2016) (0)
- Fabrication and transport properties of re-stack Nb_3Al wire by extrusion process (2008) (0)
- Deposition Characteristics of Small Molecule Organic Thin Film (CBP:PBD:TPD:Ir(Mppy) 3 ) by Modified Electrospray Deposition (2015) (0)
- Ultrafast relaxation and absorption saturation of intersubband transition in GaN/AIN MQWs (2003) (0)
- Emission characteristics of single InGaN/GaN nanopillars fabricated by hydrogen environment anisotropic thermal etching (HEATE) technique (2016) (0)
- Pillar diameter dependence of internal quantum efficiency and light extraction efficiency in InGaN/GaN nanopillars fabricated by HEATE method (2020) (0)
- 630nm Wavelength GaInP/AlInP Multi-Quantum Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GSMBE) (1991) (0)
- Anderson localization of light in two-dimensional random media (2011) (0)
- Regularly arranged InGaN-based nanocolumns and related device technology (2011) (0)
- Raman scattering from surface phonons in GaN nanostructures (2013) (0)
- Ultrafast intersubband relaxation in GaN/AlN MQWs (Invited Paper) (2005) (0)
- Resonance characteristics of WGM luminescence in hexagonal GaN microdisk (2019) (0)
- Step Flow Surface Morphology in Plasma Assisted Molecular Beam Epitaxy Grown GaN (2000) (0)
- Examination of novel optical devices based on nitride microdisk array (2017) (0)
- Design of silicon photonic slab waveguide based on combination of air-holes (2017) (0)
- Fabrication of Alq3/NPB small-molecule laminated structures with suppressed interface mixing by multi-jet mode electrospray deposition (2016) (0)
- In-plane doping profile control of plate-like organic single crystals grown by a method combining electrospray and low vapor pressure liquid film (2019) (0)
- Growth and Characterization of InN/InGaN multiple quantum wells by RF-MBE (2005) (0)
- Photoexcited carrier relaxation dynamics of InN films and nanocolumns (2011) (0)
- Morphology control of low-molecule PBD single crystals by gap method (2017) (0)
- Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices (1995) (0)
- High aspect nano-hole array fabricated by HEATE for InGaN/GaN optical waveguide type photonic crystal device (2019) (0)
- Analysis of Anderson localization of light in GaN nanocolumns (2011) (0)
- Effect of ammonia gas introduction on the shape of InGaN / GaN nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE) (2017) (0)
- 25aRE-4 Characteristics of light localization in a semiconductor column ensemble (2010) (0)
- Ultrafast intersubband relaxation dynamics in GaN/AlN multiple quantum wells using two-color pump-probe technique (2005) (0)
- Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates (2002) (0)
- Crystal line orientation dependency of triangle nano hole structure by HEATE for InGaN/GaN optical waveguide type photonic crystal device (2020) (0)
- Evaluation of size control characteristics of small molecular Alq 3 nanoparticles formation by electrospray deposition method (2017) (0)
- Author Correction: Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors (2021) (0)
- Ultrafast intersubband relaxation dynamics and coherent nonlinearity in GaN/AlN multiple quantum wells (2006) (0)
- Self-organized InGaN/GaN multiple quantum well nanocolumn light emitting diodes grown on (111) Si substrate (2004) (0)
- Research on GaInP/AlInP Visible Lasers Grown by Gas Source Molecular Beam Epitaxy (1992) (0)
- Epitaxial Growth of InN Films and InN Nano-Columns by RF-MBE (2003) (0)
- AlGaN Microdisks on Top of Supporting GaN Columns Fabricated using Hydrogen Environment Anisotropic Thermal Etching (2015) (0)
- Nanocolumn Light Emitters from Ultraviolet to Red and InGaN/GaN Nanocolumn Arrays (2009) (0)
- Invited 600 nm Range GaInP / AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates (2008) (0)
- GalnP/AllnP quasi-quaternary crystals and 607-640-nm wavelength qyasiquaternary lasers grown by gas-source-molecular beam epitaxy (1993) (0)
- Growth and properties of InAlN nanocolumns emitting in optical communication wavelengths (2008) (0)
- Ultrafast Intersubband Relaxation and Carrier Cooling in GaN/AlN multiple quantum wells (2004) (0)
- Non-Polar GaN/AlN Superlattices on A-plane AlN (500nm) Buffer Layers Grown by RF-MBE (2004) (0)
- Second harmonic generation from photonic structured (2009) (0)
- Investigation of Initial Deposition Stage of Small Molecule Alq 3 on α-NPD Layer by Modified Electro-spray Deposition (ESD) Technique (nano-mist deposition: NMD) (2014) (0)
- Optical properties of InxAl1−xN film and nanocolumns (2009) (0)
- Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers (1997) (0)
- Fabrication of CH 3 NH 3 PbBr 3 perovskite single crystal array using spin coating method and hydrophobic patterned substrate (2018) (0)
- 600nm Range GaInP/AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates (1993) (0)
- Electroabsorption modulator based on intersubband transitions in (Al)(Ga)N step quantum wells considering intermixing (2005) (0)
- Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substrates (2004) (0)
- Ultrafast carrier relaxation dynamics in InN films (2009) (0)
- Hydrogen environment anisotropie thermal etching (HEATE) of GaN for the fabrication of high-aspect nano structure (2013) (0)
- Characterization of small molecule Alq 3 /NPB laminated layers fabricated by nano-mist deposition (2016) (0)
- Fabrication of InGaN/GaN multi quantum well based nano-LEDs by hydrogen environment anisotropic thermal etching (HEATE) technique (2016) (0)
- Quasi-free standing GaN epitaxial layer grown on nano-columnar GaN by RF-plasma assisted molecular beam epitaxy (2000) (0)
- Design of gallium nitride topological photonic slab waveguide based on air-holes (2018) (0)
- Substrate Misorientation Effect On Cubic And Hexagonal GaN Grown On GaAs By Molecular Beam Epitaxy Using RF-radical Nitrogen Source (1994) (0)
- High-aspect ultra-thin Ga 2 O 3 nanowall structures with 7nm-width fabricated by Hydrogen environment anisotropic thermal etching of (010) β-Ga 2 O 3 (2019) (0)
- Effect of Growth Condition on Well-Arranged InGaN/GaN Nanocolumns Grown by Selective Area Growth (SAG) of rf-Plasma-Assisted Molecular-Beam Epitaxy (2008) (0)
- Ultraviolet to Red Emission Nano-LEDs Based on One-Dimensional III-V Nitride Nanocolumns Grown on (111) Conductive Si Substrates (2007) (0)
- Selective area growth of GaN nanocolumns by RF-MBE for light emitting devices (2008) (0)
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What Schools Are Affiliated With Akihiko Kikuchi?
Akihiko Kikuchi is affiliated with the following schools:
