Akihisa Matsuda
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Physics
Akihisa Matsuda's Degrees
- PhD Physics University of Tokyo
- Masters Physics University of Tokyo
- Bachelors Physics University of Tokyo
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(Suggest an Edit or Addition)Akihisa Matsuda's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma (1983) (487)
- Growth mechanism of microcrystalline silicon obtained from reactive plasmas (1999) (283)
- High rate growth of microcrystalline silicon at low temperatures (2000) (276)
- Microcrystalline silicon.. Growth and device application (2004) (257)
- Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon (1990) (212)
- High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition (1998) (199)
- Thin-Film Silicon –Growth Process and Solar Cell Application– (2004) (167)
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous silicon☆ (1982) (156)
- Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane (1989) (155)
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films (1980) (145)
- Effects of Substrate Surface Morphology on Microcrystalline Silicon Solar Cells (2001) (144)
- Guiding principle for preparing highly photosensitive Si-based amorphous alloys (1987) (131)
- Real-time spectroscopic ellipsometry studies of the nucleation and grain growth processes in microcrystalline silicon thin films (2001) (129)
- Spatial Distribution of SiH3 Radicals in RF Silane Plasma (1990) (127)
- Preparation of highly photosensitive hydrogenated amorphous Si‐C alloys from a glow‐discharge plasma (1986) (125)
- Glow-discharge amorphous silicon: Growth process and structure (1987) (115)
- Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation technique (1986) (115)
- High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma (2001) (108)
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge Plasma (1986) (101)
- Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate (2003) (97)
- Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma (2000) (88)
- Passivation of oxygen-related donors in microcrystalline silicon by low temperature deposition (2001) (87)
- Hydrogenated microcrystalline silicon germanium: A bottom cell material for amorphous silicon-based tandem solar cells (1996) (86)
- Effects of embedded crystallites in amorphous silicon on light-induced defect creation (1999) (83)
- One chip photovoltaic water electrolysis device (2003) (82)
- Substrate dependence of initial growth of microcrystalline silicon in plasma‐enhanced chemical vapor deposition (1996) (82)
- Amorphous silicon solar cells deposited at high growth rate (2002) (75)
- PLASMA AND SURFACE REACTIONS FOR OBTAINING LOW DEFECT DENSITY AMORPHOUS SILICON AT HIGH GROWTH RATES (1998) (74)
- Origin of the Improved Performance of High-Deposition-Rate Microcrystalline Silicon Solar Cells by High-Pressure Glow Discharge (2003) (72)
- In situ characterization of the growing a-Si:H surface by IR spectroscopy (1991) (66)
- Glow-Discharge Deposition of a-Si: H from Pure Si2H6 and Pure SiH4 (1983) (64)
- Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy (1990) (62)
- High-rate microcrystalline silicon deposition for p–i–n junction solar cells (2006) (62)
- Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon (1997) (60)
- Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma (2004) (58)
- Role of Surface and Growth-Zone Reactions in the Formation Process of µc-Si:H (1989) (58)
- Plasma spectroscopy control and analysis of a-Si:H deposition (1980) (58)
- Stress-Induced Nucleation of Microcrystalline Silicon from Amorphous Phase (2002) (55)
- Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon (1990) (55)
- Boron Doping of Hydrogenated Silicon Thin Films (1981) (54)
- Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry (2002) (51)
- Microcrystalline silicon nucleation sites in the sub-surface of hydrogenated amorphous silicon (2002) (51)
- A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network (2005) (50)
- Real‐time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy (1990) (50)
- EXPERIMENTAL EVIDENCE OF PHOTOINDUCED EXPANSION IN HYDROGENATED AMORPHOUS SILICON USING BENDING DETECTED OPTICAL LEVER METHOD (1998) (49)
- Direct evidence for extremely facile 1,2- and 1,3-group migrations in an FeSi2 system. (2004) (48)
- SURFACE REACTIONS DURING THE A-SI : H GROWTH IN THE DIODE AND TRIODE GLOW-DISCHARGE REACTORS (1991) (48)
- A Significant Reduction of Impurity Contents in Hydrogenated Microcrystalline Silicon Films for Increased Grain Size and Reduced Defect Density (1998) (47)
- Microcrystalline silicon thin-film solar cells prepared at low temperature using PECVD (2002) (46)
- SiH3 Radical Density in Pulsed Silane Plasma (1990) (46)
- Preparation of highly photosensitive hydrogenated amorphous Si‐Ge alloys using a triode plasma reactor (1985) (45)
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited µc-Si:H (1983) (44)
- High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma (2004) (44)
- Importance of surface processes in defect formation in a-Si:H (1993) (44)
- Combinatorial synthesis of trisaccharides via solution-phase one-pot glycosylation (2000) (43)
- Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon (1996) (42)
- Interface-layer formation in microcrystalline Si:H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy (2003) (42)
- Dark current transport mechanism of p‐i‐n hydrogenated amorphous silicon diodes (1985) (41)
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys (1989) (41)
- Industrial Plasma Technology: Applications from Environmental to Energy Technologies (2010) (41)
- Novel aspects in thin film silicon solar cells-amorphous, microcrystalline and nanocrystalline silicon (2004) (40)
- Low temperature growth of microcrystalline silicon and its application to solar cells (2001) (40)
- Gas-phase diagnosis and high-rate growth of stable a-Si:H (1999) (39)
- Guiding principles for obtaining stabilized amorphous silicon at larger growth rates (2000) (38)
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy (1981) (38)
- Amorphous silicon technology -- 1996 (1996) (37)
- NEGATIVE CORRELATION ENERGY AND VALENCE ALTERNATION IN AMORPHOUS SELENIUM : AN IN SITU OPTICALLY INDUCED ESR STUDY (1998) (37)
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam (1991) (35)
- Lifetime of dominant radicals for the deposition of a-Si:H from SiH4 and Si2H6 glow discharges (1983) (34)
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films (1981) (33)
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H (1983) (33)
- Key Issue for the Fabrication of High-Efficiency Microcrystalline Silicon Thin-Film Solar Cells at Low Temperatures (2002) (33)
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption (1982) (32)
- An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates (2002) (32)
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy (1983) (32)
- Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface (1998) (32)
- Highly stabilized hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD (2006) (31)
- Electrical Properties of Pulsed Laser Crystallized Silicon Films (1999) (30)
- Preparation of stable and photoconductive hydrogenated amorphous silicon from a Xe‐diluted silane plasma (1991) (29)
- Fundamental aspects of low-temperature growth of microcrystalline silicon (2003) (29)
- The light-induced metastable lattice expansion in hydrogenated amorphous silicon (2000) (29)
- The dynamics of photoexcited carriers in microcrystalline silicon (1984) (29)
- Anomalous Optical and Structural Properties of B-Doped a-Si:H (1982) (29)
- Nucleation mechanism of microcrystalline silicon from the amorphous phase (2004) (28)
- Device-Grade Amorphous Silicon Prepared by High-Pressure Plasma (2002) (28)
- The role of argon involved in plasma-deposited amorphous Si:H films (1980) (28)
- EXPERIMENTAL EVIDENCE FOR NEGATIVE CORRELATION ENERGY AND VALENCE ALTERNATION IN AMORPHOUS SELENIUM (1997) (27)
- Low-temperature growth of crystalline silicon on a chlorine-terminated surface (1999) (27)
- Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells (2002) (26)
- Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane (1997) (26)
- Recent understanding of the growth process of amorphous silicon from a silane glow-discharge plasma (1997) (26)
- Hydrogenated amorphous silicon prepared by ArF and F2 excimer laser‐induced photochemical vapor deposition (1987) (26)
- Interpretation of 29Si nuclear magnetic resonance spectra of amorphous hydrogenated silicon (1986) (26)
- Spectroscopic diagnostics of plasma‐chemical‐vapor deposition from silane and germane (1987) (25)
- (Invited) Optical, Electrical and Structural Properties of Plasma-Deposited Amorphous Silicon (1980) (25)
- Microcrystalline silicon solar cells fabricated on polymer substrate (2002) (24)
- Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy (2000) (24)
- Influence of Power-Source Frequency on the Properties of GD a-Si:H (1984) (24)
- Low-temperature fabrication of microcrystalline silicon and its application to solar cells (2002) (24)
- Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD (1999) (23)
- Reduced light‐induced changes of photoconductivity in duterated amorphous silicon (1990) (22)
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent (1982) (21)
- Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance (2004) (21)
- Metal‐semiconductor junctions and amorphous‐crystalline heterojunctions using B‐doped hydrogenated amorphous silicon (1984) (21)
- Deposition Kinetics and Structural Control of Highly Photosensitive A-SiGe:H Alloys (1986) (21)
- Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon (1985) (20)
- Anomalous behavior of electron temperature in silane glow discharge plasmas (2001) (20)
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method (1988) (20)
- ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY (1981) (20)
- Neutral radical detection in silane glow-discharge plasma using coherent anti-stokes raman spectroscopy☆ (1983) (20)
- Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp (1986) (19)
- Localized surface plasmon enhanced microcrystalline–silicon solar cells (2012) (19)
- Observation of Meyer-Neldel rule in extended energy regime using novel a-Si:H TFTs (1996) (18)
- In-situ investigation of the growing a-Si:D surface by infrared reflection absorption spectroscopy (1993) (17)
- Nonphotochemical Synthesis of a Base-free Silyl(silylene)iron Complex and Its Reaction with CO: Another Direct Evidence for Reversible 1,2- and 1,3-Group Migrations (2005) (17)
- Control of photodegradation in amorphous silicon: The effect of deuterium (1991) (17)
- Improvement of hydrogenated amorphous silicon germanium alloys using low power disilane–germane discharges without hydrogen dilution (1995) (16)
- Microcrystalline silicon thin-film solar cells prepared at low temperature using RF-PECVD (2000) (16)
- Stability of thin film solar cells having less-hydrogenated amorphous silicon i-layers (2008) (16)
- Improvement of Voc using carbon added microcrystalline Si p-layer in microcrystalline Si solar cells (2002) (16)
- Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking (1992) (16)
- Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H (1996) (15)
- On the Transport Properties of Microcrystalline Silicon at Low Temperatures (1998) (15)
- Parallel Synthesis of Oligosaccharide Conjugated Enediynes onto Silyl-linked Solid-Support (2001) (15)
- Nucleation Mechanism of Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry and Infrared Spectroscopy (2000) (15)
- Chemical-reaction dependence of plasma parameter in reactive silane plasma (2001) (15)
- A Defect Density of ∼ 10 14 cm -3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures (1992) (15)
- Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition (2000) (15)
- Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon (1994) (15)
- Lattice orientation of microcrystallites in μc-Si:H (1989) (15)
- Enhancement of Open Circuit Voltage via Light soaking in Amorphous Silicon Solar Cells (2000) (14)
- Recent developments in the high growth rate technique of device-grade microcrystalline silicon thin film (2003) (14)
- A novel approach for the growth of μc-Si at a high rate over 3 nm/s (2003) (14)
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane (1986) (14)
- Dependence of steady‐state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range (1993) (14)
- Defect formation process during growth of hydrogenated amorphous silicon at high temperatures (1992) (13)
- Pulsed ESR Study of the Conduction Electron Spin Center in μc-Si:H (1996) (13)
- STM observation on the initial growth of amorphous and microcrystalline silicon films (1996) (13)
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes (1980) (13)
- A New Approach to Nine-Membered Enediyne Using a Palladium Catalyzed Cross-Coupling Reaction (1997) (13)
- Nucleation and coalescence in hydrogenated amorphous silicon studied by scanning tunneling microscopy (1994) (13)
- Amorphous Si and Si-based alloys from glow-discharge plasma (1988) (13)
- Light-induced, reversible, above-gap, optical changes in hydrogenated amorphous silicon films (2000) (12)
- Guiding Principles for Obtaining High-Quality Microcrystalline Silicon at High Growth Rates Using SiH4/H2 Glow-Discharge Plasma (2007) (12)
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H Films (1981) (12)
- Reduction of light-induced defects by nano-structure tailored silicon solar cells using low-cost TCO substrates (2006) (12)
- High-rate growth of stable a-Si:H (1999) (12)
- Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge (1996) (12)
- A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures (1993) (12)
- Detection of photoinduced structural change in a-Si:H by bending effect (1998) (11)
- Synthesis of 9-membered masked enediyne analogues possessing DNA intercalator and sugar moieties. (1998) (11)
- Two‐photon laser‐induced fluorescence measurements of absolute atomic hydrogen densities and powder formation in a silane discharge (1994) (11)
- High-pressure plasma CVD for high-quality amorphous silicon (2001) (11)
- Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:H (1994) (11)
- High rate growth of device-grade microcrystalline silicon films at 8 nm/s (2006) (11)
- Thin film silicon solar cells on liquid crystal polymer substrate (2003) (11)
- Control of plasma and surface conditions for low defect density a-Si:H at high growth rates (1996) (11)
- Proton nuclear magnetic resonance study on hydrogen incorporation in amorphous‐microcrystalline mixed‐phase hydrogenated silicon (1984) (11)
- Microcrystalline Silicon Thin-Film Solar Cells Prepared at Low Temperature (2001) (11)
- Role of hydrogen dilution in improvement of a-SiGe:H alloys (1996) (11)
- Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth (2003) (11)
- Glow-Discharge Deposition of Amorphous Silicon from SiH3F (1984) (11)
- Behavior of surface hydrogen on a-Ge:H (1996) (10)
- The determinants of hydrogen concentrations in hydrogenated amorphous silicon films prepared using a triode deposition system (2007) (10)
- Importance of the transport isotropy in μc-Si:H thin films for solar cells deposited at low substrate temperatures (2002) (10)
- Silane thermometry in radio‐frequency discharge plasma by coherent anti‐Stokes Raman spectroscopy (1986) (10)
- The Orthorhombic-to-Tetragonal Phase Transition in Sputtered Gd-Ba-Cu-O Thin Films by Low Temperature Processing (1988) (10)
- Deposition of ultrapure hydrogenated amorphous silicon (1999) (10)
- Photocarrier capture properties of light-induced defects in a-Si:H (2001) (9)
- Deposition mechanism of hydrogenated amorphous SiGe Films (1988) (9)
- NMR study of c-Si:H (1983) (9)
- DNA cleaving activities of 9-membered masked enediyne analogues possessing DNA intercalator and sugar moieties. (1998) (9)
- Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition (1995) (9)
- Trial to control hydrogen content in a-Si:H deposited using rare-gas-diluted silane plasmas (1993) (9)
- Hopping Transport of Electrons and Holes at Localized Band Tail States in Amorphous Hydrogenated Silicon and Amorphous Heavy-Hydrogenated Silicon (2005) (9)
- Dispersive photoluminescence decay of a-Si:H (1983) (8)
- High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode (2007) (8)
- Structure, defect and transport properties of highly photoconductive a-SiGe:H and a-SiC:H alloys (1989) (8)
- Fabrication of hydrogenated amorphous silicon films exibiting higher stability against light soaking (2004) (8)
- Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment (1996) (8)
- Transport properties of microcrystalline silicon at low temperatures (1998) (8)
- Defect determination kinetics during the growth of a-Si:H (1993) (8)
- A study of the growth-mechanism and properties of microcrystalline silicon–germanium (1998) (8)
- Independent control of spin density and hydrogen‐bonding configuration in glow‐discharge‐hydrogenated Si‐Ge alloys using a cathode‐heating method (1988) (8)
- Excitation frequency dependence of the optical emission intensity vs. deposition rate relationship in silane plasmas (2000) (8)
- Microcrystalline silicon solar cells grown at 20-30 a/s by high-pressure silane-depletion plasma (2003) (8)
- Synthesis of 10-membered masked oxaenediyne analogue of kedarcidin-chr. and C-1027-chr., and its DNA cleaving activity (1996) (7)
- A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous silicon (2000) (7)
- A new deposition parameter to control the carrier drift mobility in a-Si:H (1996) (7)
- Electrode distance dependence of photo-induced degradation in hydrogenated amorphous silicon (2002) (7)
- Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon (1999) (7)
- Preparation and Properties of Nanocrystalline Silicon (2004) (7)
- High-Rate Plasma Process for Microcrystalline Silicon: Over 9% Efficiency Single Junction Solar Cells (2004) (7)
- Light-soaking stability of silicon thin film solar cells using alternately hydrogenated dilution method (2004) (7)
- Role of Hydrogen for Microcrystalline Silicon Formation (1998) (7)
- Real-time studies of amorphous and microcrystalline Si:H growth by spectroscopic ellipsometry and infrared spectroscopy (2004) (7)
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method (2001) (7)
- The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma (2000) (7)
- Thermal stability of light-induced defects in hydrogenated amorphous silicon: Effect on defect creation kinetics and role of network microstructure (2008) (6)
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H (1981) (6)
- Gas‐temperature control in VHF‐ PECVD process for high‐rate (>5 nm/s) growth of microcrystalline silicon thin films (2010) (6)
- Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate (2001) (6)
- Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon (1993) (6)
- Effects of Hydrogen Diluted silane plasma on Amorphous Silicon Solar Cells (2000) (6)
- A study of light-induced degradation of a-Si:H by nanosecond laser pulse pairs of variable delay (2000) (5)
- Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction model (1996) (5)
- Laplace Meyer–Neldel relation (2010) (5)
- Low-Temperature Fabrication of Nanocrystalline-Silicon Solar Cells (2004) (5)
- Reduction of the defect density in hydrogenated amorphous silicon by thermally energized growth precursors (1994) (5)
- How do Impurities Affect the Growth of μc-Si:H? (1998) (5)
- Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence (1992) (5)
- Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature (2001) (5)
- Amorphous and Microcrystalline Silicon (2017) (5)
- Crucial processing steps for microcrystalline silicon bottom cells (2005) (5)
- Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques (1991) (5)
- Midgap-state profiles in undoped amorphous-silicon-based alloys (1989) (5)
- 2D and 1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon (1991) (5)
- Effect of Strained Si-Si Bonds in Amorphous Silicon Incubation Layer on Microcrystalline Silicon Nucleation (2001) (5)
- New results of spin-lattice relaxation in a-Si:H by pulsed ESR (1993) (5)
- Photo-induced bond switching in amorphous chalcogenides (1999) (5)
- A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination (2000) (5)
- Surface photovoltage measurements in μc-Si:H: Manifestation of the bottom space charge region (2002) (5)
- A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers (2001) (5)
- Importance of Starting Procedure for Film Growth in Substrate-Type Microcrystalline-Silicon Solar Cells (2011) (5)
- 1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon (1991) (5)
- Novel Plasma Control Method in PECVD for Preparing Microcrystalline Silicon (1997) (5)
- Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements (1998) (4)
- Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline Silicon (1997) (4)
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon (1986) (4)
- Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H (2002) (4)
- Reduction of the Defect Density in a-Si:H Deposited at ≤250°C (1993) (4)
- STM and Raman study of the evolution of the surface morphology in μc-Si:H (1996) (4)
- Ultraviolet photon induced stimulation of surface reaction during growth of hydrogenated amorphous silicon: Estimation of the lifetime of film precursors (1993) (4)
- 31P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys (1987) (4)
- Power Law Behavior in Amorphous Si:H and Si:D Due to Hopping‐Randomwalk of Electrons in Localized Band Tail States in Random Fractal Fluctuation (2002) (4)
- Fast light-induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination (2001) (4)
- Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from 'new' deposition techniques (1996) (4)
- The effect of superlattice buffer of microcrystalline silicon solar cells (2003) (4)
- Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films (2001) (4)
- The effect of hydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVD system (1996) (3)
- High rate growth of microcrystalline silicon films assisted by high density plasma (2003) (3)
- Energy location of light-induced ESR centers in undoped a-Si:H (1998) (3)
- Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor (2001) (3)
- Threshold intensity for dangling-bond-termination reaction by ultraviolet laser irradiation during plasma deposition of a-Si:H films (1993) (3)
- Low-Temperature Formation of Polycrystalline Silicon and Its Device Application (2003) (3)
- Promising window layer of thin film si solar cell with p-i-n structure prepared by using SiH2Cl2 (2002) (3)
- Photocarrier capture properties in a-Si:H (2002) (3)
- Measurement of spatial distribution of gap states originating from dangling bonds near metal/a-Si:H interface (1985) (3)
- Real-time observation of the energy band diagram during microcrystalline silicon p–i interface formation (2003) (3)
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon (1991) (3)
- Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films (2002) (3)
- Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase (1988) (3)
- Initial Growth of Microcrystalline Silicon on Atomically Flat Hetero-Substrate (1997) (3)
- Control of Photo-Induced Degradation in a-Si:H Prepared from Xe-Diluted Silane (1991) (3)
- Pulsed Esr Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H (1996) (3)
- Structure of platinum-hydrogenated amorphous silicon interfaces studied by fluorescence-detected x-ray absorption spectroscopy (1985) (2)
- Negative correlation energy in amorphous selenium: experimental evidence (1998) (2)
- Positron Lifetime Study on Semiconductor Thin Films (1997) (2)
- Microcrystalline silicon germanium: An attractive bottom-cell material for thin-film silicon-based tandem-solar-cells (1997) (2)
- A study of surface reactions during the growth of B-doped a-Si:H using the intermittent deposition technique (1996) (2)
- Synthesis of 10-Membered Masked Oxaenediyne Analogue of Kedarcidin-chr. and C-1027-chr., and Its DNA Cleaving Activity. (1996) (2)
- Growth of microcrystalline silicon films using deuterium dilution (2002) (2)
- Kinetics and steady-states of light-induced defects in a-Si:H prepared by three different techniques (1993) (2)
- Fundamental Properties of Titanium-Doped Indium Oxide and Its Application to Thin-Film Silicon Solar Cells (2012) (2)
- Control of Materials and Interfaces in μc-Si:H-based Solar Cells Grown at High Rate (2011) (2)
- Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions (2000) (2)
- High rate growth of device grade silicon thin films for solar cells (2001) (2)
- Polarized Electroabsorption in Pulse and Continuous Light-Soaked a-Si:H - Structural Change other than Defect Creation (1997) (2)
- Electrical Properties of n--p Amorphous-Crystalline Silicon Heterojunctions (1983) (2)
- Plasma Deposition and Characterization of Stable a-Si:H (Cl) From a Silane-Dichlorosilane Mixture (1995) (2)
- Growth Mechanism of Hydrogenated Amorphous SiC from a Glow-Discharge Plasma (1992) (2)
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films (1990) (2)
- Difference between deposition- and light-induced defects in a-Si:H studied by light-induced annealing experiments (1993) (2)
- Large area deposition of hydrogenated amorphous silicon by VHF-PECVD using novel electrodes (2000) (2)
- Evidence for the dominance of charged dangling bond defects in the photodegradation of hydrogenated amorphous silicon (1991) (2)
- Nanostructure characterization of nanocrystalline Si thin films by using small angle X-ray scattering (SAXS) (2003) (1)
- Novel network control in hydrogenated amorphous silicon by molecular beam deposition method (2004) (1)
- Improved Crystallinity of Microcrystalline Silicon Films Using Deuterium Dilution (2000) (1)
- Light-induced metastability of 'stable' a-Si:H deposited from silane-dichlorosilane mixtures-comprehensive characterization (1996) (1)
- μτ Products of 10 −6 cm 2 V −1 Deduced from Eleverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H (1995) (1)
- The relationship between $I_{{\rm H}_{\rm \alpha } } /(I_{{\rm SiH}}^* )^2$ and crystalline volume fraction in microcrystalline silicon growth (2010) (1)
- New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys (1990) (1)
- Precursor lifetime estimation by ultraviolet laser modulation of a hydrogenated amorphous silicon growth surface (1994) (1)
- Reexamination of high drift mobility a-Si:H (1998) (1)
- Four terminal cell analysis of amorphous/microcrystalline Si tandem cell (2003) (1)
- New Results of nc-Si:H Films Prepared by Hydrogen-Diluted Silane in a Triode Pecvd System (1996) (1)
- Plasma CVD Processes for Thin Film Silicon Solar Cells (2008) (1)
- Nonlinear Dependence of μ e τ e on Subgap Absorption in Pulse and cw Light-Soaked a-Si:H (1996) (1)
- Etching of Amorphous As2S3 Evaporated Films (1975) (1)
- Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD (2005) (1)
- High electron and hole drift mobility in a-Si:H [solar cells] (1994) (1)
- Investigation of Growth Process in p-Type mc-Si:H for Thin Film-Si Solar Cells (2010) (1)
- Charge Transport in Microcrystalline Silicon, Relation to Thin Film Solar Cells (1998) (1)
- Film Growth Processes from Glow-Discharge Plasma (1988) (1)
- A new perspective on the characterization of materials for a-Si:H solar cells (2001) (1)
- 1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma (1992) (1)
- Light-soaking stability of nano-structure tailored silicon thin film solar cells (2003) (1)
- Impurity diffusion effect on p/i interface properties of p-i-n junction microcrystalline silicon solar cells (2003) (1)
- Growth of stable amorphous silicon films by gas‐flow‐controlled RF plasma‐enhanced chemical vapor deposition (2010) (1)
- Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT (1994) (1)
- Suppression of Plasma Damage on SnO2 by Means of a Different Surface Chemistry Using Dichlorosilane (2000) (1)
- Microcrystalline Si films deposited from dichlorosilane using RF-PECVD (2001) (0)
- Control of defect density in a-Si : H by surface processes (1993) (0)
- The degradation properties of a-Si:H films prepared by less-conventional methods [solar cells] (2000) (0)
- Real-time studies of nucleation and interface formation in microcrystalline silicon growth (2003) (0)
- A New Approach to Nine‐Membered Enediyne Using a Palladium Catalyzed Cross‐Coupling Reaction. (1997) (0)
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite (1995) (0)
- Nonlinear dependence of {mu}{sub e}{tau}{sub e} on subgap absorption in pulse and CW light-soaked a-Si:H (1996) (0)
- Fabrication of the hydrogenated amorphous silicon films containing less hydrogen and its stability against light soaking (2003) (0)
- Fabrication of the Hydrogenated Amorphous Silicon Films Exhibiting High Stability Against Light Soaking (2011) (0)
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by 2H Nuclear Magnetic Resonance (1994) (0)
- Preparation of high photosensitive a-SiGe:H alloys from glow-discharge plasma (1985) (0)
- Processing of Thin Film Silicon Solar Cells under Ionic Bombardment Control (2001) (0)
- Key Technologies for Next Generation Thin Film Silicon Solar Cells. Issues Upon Surface and Interface of Microcrystalline Silicon Thin Film as a Solar Cell Material. (2000) (0)
- Field Enhanced Processes in Photodoping Effects in Amorphous As2S3 (1972) (0)
- On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H (2000) (0)
- Pulsed ESR study of light-induced metastable defects in {sup 17}O and {sup 13}C incorporated a-Si:H (1996) (0)
- In-situ monitoring of surface hydrogen on the a-SiGe:H films (1997) (0)
- The relationship between IHα/(I*SiH)2 and crystalline volume fraction in microcrystalline silicon growth (2010) (0)
- Improvement of microcrystalline silicon solar cell by insertion of buffer layer to TCO/p interface (2003) (0)
- Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process (1997) (0)
- Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range (1993) (0)
- Measurements on Radio-Frequency Discharge Plasma of Silane by Coherent Anti-Stokes Raman Spectroscopy and Laser-Induced Fluorescence (1989) (0)
- Synthesis of 9-Membered Masked Enediyne Analogues [cf. (V) and (VIII)] Possessing DNA Intercalator and Sugar Moieties. (1999) (0)
- A method for producing a silicon film on a substrate in a plasmaatmosphaere (1985) (0)
- Gas temperature estimation of microcrystalline-slicon-film-growth process under high pressure in VHF PECVD (2017) (0)
- Pump–probe pulse transient photoconductivity study in amorphous and microcrystalline Si:H (2002) (0)
- Effects of Intermittent Deposition on the Defect Density in a-Si:H (1994) (0)
- Development of Ultra-Clean Plasma Deposition Process (1999) (0)
- Structural analysis of amorphous thin films by time of flight mass spectrometry (1996) (0)
- Area 1 Crystalline and Thin Film Silicon PV GAS TEMPERATURE DETERMINATION AT MICROCRYSTALLINE SILCON FILM GROWTH UNDER HIGH GROWTH RATE CONDITION USING VHF-PECVD METHOD (2017) (0)
- Film growth of amorphous silicon under high substrate temperature and surface dangling-bond reducation (2016) (0)
- A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS (1981) (0)
- 4.2 Process Control for Obtaining High Quality Amorphous Silicon-Based Wide-Gap Materials(4.Film Properties and Device Performance, Science and Technology of Plasma-Enhanced Chemical Vapor Deposition for High-Efficiency Silicon Solar Cells) (2015) (0)
- Laser Beam Deflection with CdS Single Crystal (1971) (0)
- Manufacturing method of thin films, thin films and apparatus for the production of solar cell (2001) (0)
- High Rate Growth of High Quality Polysilicon at Low Temperatures Using Plasma CVD (2000) (0)
- Effect of Substrate-Surface Roughness on Defect Density and Photovoltaic Performance in μc-Si:H Solar Cells (2010) (0)
- High–conductive and wide optical–gap boron–doped Si:H films (2008) (0)
- As grown and light soaked defect densities in a-Si:H with sharp band tails (1996) (0)
- Mechanism of plasma chemical-vapor deposition of hydrogenated amorphous silicon (1993) (0)
- Characterization of thin films by a pulsed positron beam (2008) (0)
- Electron temperature control in silane plasma for fabricating highly stabilized hydrogenated amorphous silicon (2003) (0)
- Unusual hydrogen distribution and its change in hydrogenated amorphous silicon prepared using bias electric-field molecular beam deposition (2006) (0)
- Factors limiting further improvement of a-SiGe:H (1996) (0)
- Control of electron temperature in SiH4/H2 plasma for obtaining high photovoltaic performance in microcrystalline silicon solar cells (2013) (0)
- Control of Plasma Deposition by the Observation of Plasma Spectrum (1980) (0)
- Defect-Density Distribution in Microcrystalline Silicon Prepared at High Growth Rate (2010) (0)
- Photoacoustic spectra of P‐doped and undoped GD a‐Si:H films (2008) (0)
- Defect distribution in PADS a-Si:H and its application for solar cells (2016) (0)
- Improvement of Photovoltaic Performance in Microcrystalline Silicon Thin Film Solar Cells by Means of Compress Layer (2010) (0)
- Strategies and Issues on the Plasma Processing of Thin‐Film Silicon Solar Cells (2010) (0)
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