Anthony Cullis
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British electrical engineer
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Engineering
Anthony Cullis's Degrees
- Bachelors Electrical Engineering University of Manchester
- PhD Electrical Engineering University of Oxford
Why Is Anthony Cullis Influential?
(Suggest an Edit or Addition)According to Wikipedia, Anthony George Cullis FRS was a British electronic engineer, and professor at University of Sheffield. Life Cullis was born on 16 January 1946 in Worcester. He earned a BA at the University of Oxford in 1968, and MA, and DPhil in Semiconducting Materials at Oxford University in 1972.
Anthony Cullis's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- The structural and luminescence properties of porous silicon (1997) (2223)
- Visible light emission due to quantum size effects in highly porous crystalline silicon (1991) (1224)
- Hard-x-ray lensless imaging of extended objects. (2007) (702)
- Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots. (2000) (409)
- Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs. (2001) (223)
- Transmission microscopy without lenses for objects of unlimited size. (2007) (207)
- Evolution of surface morphology and strain during SiGe epitaxy (1992) (179)
- Luminescent anodized silicon aerocrystal networks prepared by supercritical drying (1994) (165)
- The Microscopy Of Semiconducting Materials (1980) (150)
- Arsenic precipitation at dislocations in GaAs substrate material (1980) (127)
- Stranski-Krastanow transition and epitaxial island growth (2002) (124)
- Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies (2002) (124)
- A model for heterogeneous growth of Si1−xGex films from hydrides (1991) (102)
- Quantum-confined Stark shifts of charged exciton complexes in quantum dots (2004) (102)
- Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots (2000) (90)
- High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture (2003) (86)
- Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition (2002) (79)
- Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters (2003) (74)
- Growth ripples upon strained SiGe epitaxial layers on Si and misfit dislocation interactions (1994) (74)
- Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers (1993) (72)
- Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy (1997) (66)
- Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy (1988) (66)
- Electron microscope study of electrically active impurity precipitate defects in silicon (1974) (64)
- Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors (2007) (61)
- Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition (2007) (55)
- Microscopy of Semiconducting Materials, 1987 (1985) (51)
- Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers (1994) (44)
- Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs (2004) (44)
- Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM (2012) (41)
- Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature (2006) (40)
- Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance (2002) (40)
- Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots (2001) (39)
- 1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer (2008) (39)
- High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy (2004) (37)
- Spontaneous Emission Control in Micropillar Cavities Containing a Fluorescent Molecular Dye (2006) (37)
- Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures (2002) (37)
- Molecular dynamics simulations of implantation damage and recovery in semiconductors (1995) (35)
- Toward Silicon-Based Lasers for Terahertz Sources (2006) (34)
- Computer simulation of atomic displacements in Si, GaAs, and AlAs (1995) (34)
- Spectroscopic ellipsometry of Si1−xGex epilayers of arbitrary composition 0≤x≤0.255 (1994) (34)
- Composition and strain dependence of the piezoelectric coefficients in InxGa1-xAs alloys (2006) (33)
- Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness (2007) (32)
- Topographical contrast in the transmission electron microscope. (1975) (30)
- Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM (2002) (30)
- A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy (1995) (28)
- Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes (2007) (28)
- Intersubband lifetimes in p-Si/SiGe terahertz quantum cascade heterostructures (2005) (28)
- Si-based electroluminescence at THz frequencies (2002) (28)
- Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures (2002) (26)
- Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots (2003) (26)
- In situ laser light scattering. I: Detection of defects formed during silicon molecular beam epitaxy (1989) (26)
- An MBE growth facility for real‐time in situ synchrotron x‐ray topography studies of strained‐layer III–V epitaxial materials (1992) (24)
- Influence of composition on the piezoelectric effect and on the conduction band energy levels of inxGa1-xAs/GaAs quantum dots (2004) (24)
- Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer (2005) (24)
- The Structure of Porous Silicon Revealed by Electron Microscopy (1991) (23)
- In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation (1995) (22)
- Single Crystal Y 3Al5 O 12: Tb Phosphor Produced by Ion Implantation (1982) (21)
- Structure of CdTe‐Cd1−xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy (1989) (21)
- Growth interfaces of Si1−xGex/Si heterostructures studied by in situ laser light scattering (1991) (20)
- Laboratory Design for High-Performance Electron Microscopy (2004) (19)
- Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy (2001) (19)
- LETTER TO THE EDITOR: CdS/CdSe strained layer superlattices grown by MOCVD (1988) (19)
- Nanomanipulation and electrical behaviour of a single gold nanowire using in-situ SEM-FIB-nanomanipulators (2008) (18)
- Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots (2005) (18)
- The Influence of Buffer Layer Growth Parameters on the Microstructure and Surface Morphology of GaN on Sapphire Substrates Correlated with in‐situ Reflectivity (2001) (18)
- Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells (1994) (18)
- Si/SiGe quantum-cascade emitters for terahertz applications (2003) (18)
- Surface elemental segregation and the Stranski–Krastanow epitaxial islanding transition (2005) (16)
- Anisotropy of the electron energy levels in InxGa1−xAs/GaAs quantum dots with non uniform composition (2005) (16)
- Molecular beam epitaxial growth and magneto-transport studies of the InSb/CdTe material systems (1990) (16)
- SiGe virtual substrate N-channel heterojunction MOSFETs (1999) (16)
- Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition (2001) (16)
- Atomistic simulation of InxGa1-xAs/GaAs quantum dots with nonuniform composition (2002) (15)
- Topography measurements of the critical thickness of ZnSe grown on GaAs (1998) (15)
- Demonstration of quantum confinement in InSb‐In1−xAlxSb multiquantum wells using photoluminescence spectroscopy (1994) (15)
- In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system (1998) (15)
- First direct observation of voids in bulk, undoped, semi‐insulating GaAs (1991) (15)
- High-resolution topographical imaging by direct transmission electron microscopy (1974) (15)
- The refractive indices of alloys (1998) (15)
- Microscopy of Semiconducting Materials 2001 (2002) (15)
- The Tersoff potential for phonons in GaAs (2006) (14)
- Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs/GaAs multiple quantum wells (2006) (14)
- Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging (1999) (14)
- Round robin investigation of silicon oxide on silicon reference materials for ellipsometry (1993) (13)
- Two step optimized process for scanning tunneling microscopy tip fabrication (2010) (13)
- Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition (2006) (12)
- Tomographic nanofabrication of ultrasharp three-dimensional nanostructures (2008) (12)
- Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs (2003) (12)
- THERMAL OXIDATION OF STRAINED SI/SIGE: IMPACT OF SURFACE MORPHOLOGY AND EFFECT ON MOS DEVICES (2004) (12)
- Transmission electron microscope studies of Nb-Ge superconducting films (1977) (12)
- Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods (2003) (11)
- Electron microscope study of epitaxial silicon films on sapphire and diamond substrates (1976) (11)
- The nature of defocus fringes in scanning‐transmission electron microscope images (1976) (11)
- Ion Milling of Compound Semiconductors for Transmission Electron Microscopy (1987) (10)
- Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy (2001) (10)
- Microscopy of semiconducting materials : proceedings of the 14th conference, April 11-14, 2005, Oxford, UK (2005) (9)
- Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs (1998) (9)
- Evaluation of strained Si/SiGe material for high performance CMOS (2004) (9)
- Fabrication of novel quantum cascade lasers using focused ion beam (FIB) processing. (2006) (9)
- Fabrication of a novel SEM microgripper by electrochemical and FIB techniques (2009) (9)
- Fabrication of carbon nanotubes by electrical breakdown of carbon-coated Au nanowires (2010) (8)
- Simulation of X-ray reflection topographs from misfit dislocations (1994) (8)
- X-shaped plasmonic antenna on a quantum cascade laser (2010) (8)
- Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED (2002) (8)
- Spectroscopic ellipsometry of Si1-xGex multi-quantum wells (1993) (8)
- CdS and CdSe single and multilayer structures grown on GaAs (1989) (8)
- SiGe quantum cascade structures for light emitting devices (2005) (7)
- InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM (2009) (7)
- Mbe Growth of Strained-Layer InSb/InAlSb Structures (1990) (7)
- Optical cavities for Si/SiGe tetrahertz quantum cascade emitters (2005) (7)
- Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy (2000) (7)
- Study of annealed InAs/GaAs quantum dot structures (2010) (7)
- Installing and Operating Fegtem's (1997) (7)
- Optical spectroscopy of GaAs–AlGaAs v-groove quantum wires (1998) (7)
- The structure of CdTe–InSb multilayers grown on (001) InSb using molecular beam epitaxy (1991) (6)
- Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs (1991) (6)
- AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region (2005) (6)
- Investigating the Capping of InAs Quantum Dots by InGaAs (2008) (6)
- Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells (2001) (6)
- Growth and in vivo STM of III-V Compound Semiconductors (2008) (6)
- Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching (2007) (5)
- Measuring the contrast in annular dark field STEM images as a function of camera length (2010) (5)
- Quantum Confined Stark Effect and Permanent Dipole Moment of InAs–GaAs Self‐Assembled Quantum Dots (2000) (5)
- Electroluminescence from Si/SiGe quantum cascade emitters (2003) (5)
- Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes (1999) (5)
- GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation (2009) (5)
- THz intersubband dynamics in p-Si/SiGe quantum well structures (2002) (5)
- Dislocation contrast in X-ray reflection topography of strained heterostructures (1994) (4)
- Terahertz Emission From Silicon-Germanium Quantum Cascades (2003) (4)
- InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope (2010) (4)
- Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy (2010) (4)
- Observation of in‐plane polarized intersublevel absorption in strongly coupled InGaAs/GaAs self assembled quantum dots (2003) (4)
- Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect (2005) (3)
- Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy (2006) (3)
- Study of the effect of annealing of In(Ga)As quantum dots (2010) (3)
- How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition (2018) (3)
- GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection (2010) (3)
- Spectroscopic ellipsometry characterisatiion of strained Si1-xGex multi quantum wells for optoelectronic applications (1993) (3)
- Studies of Porous Silicon by Electron Microscopy (1993) (3)
- Transmission Properties of Plasmonic Metamaterial Quantum Cascade Lasers (2010) (3)
- Temperature dependence of Ga-assisted oxide desorption on GaAs(001) (2010) (3)
- THz electroluminescence from shallow level impurities in Si/SiGe heterostructures (2002) (2)
- TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology (2010) (2)
- 1070 nm and 1118 nm high power lasers grown with partial strain balancing (2003) (2)
- Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers (2005) (2)
- Chemical‐beam‐epitaxy growth of indium‐containing III–V compounds using triisopropylindium (1996) (2)
- In search of a Si/SiGe THz quantum cascade laser (2004) (2)
- Silicon quantum cascade lasers for THz sources (2005) (2)
- High Performance Strained Si/SiGe nMOSFETs Using a Novel CMOS Architecture (2003) (2)
- Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm (2008) (2)
- The nature of islanding in the InGaAs / GaAs epitaxial system (2000) (2)
- Epitaxial island growth and the Stranski-Krastanow transition (2001) (2)
- The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors (2006) (2)
- Chapter 6 – Microstructure and Topography (1982) (2)
- Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures (2005) (2)
- As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy (2009) (2)
- Towards a Si/SiGe quantum cascade laser for terahertz applications (2004) (2)
- Microscopy of semiconducting materials, 1983 : proceedings of the Institute of Physics Conference held in St Catherine's College, Oxford, 21-23 March 1983 (1983) (2)
- n-Type Si/SiGe quantum cascade structures (2006) (1)
- ELECTRONIC PROPERTIES OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOT STRUCTURES AND DEVICES STUDIED BY PHOTOCURRENT SPECTROSCOPY (2000) (1)
- Nanoconstruction by welding individual metallic nanowires together using nanoscale solder (2010) (1)
- Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process (2005) (1)
- Terahertz intersubband emission from silicon-germanium quantum cascades (2002) (1)
- Si/SiGe terahertz quantum cascade emitters (2003) (1)
- Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics Conference, Cambridge University, 31 March - 3 April 2003 (2003) (1)
- Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applications (2005) (1)
- THz electroluminescence from Si/SiGe quantum cascade heterostructures (2002) (1)
- The Mechanism of the Stranski-Krastanov Transition (2005) (1)
- Laser induced doping profiles in molecular beam epitaxy grown ZnSe doped with iodine (1994) (1)
- The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface (2006) (1)
- Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devices (2005) (1)
- Surface emission from MBE and MOVPE grown quantum cascade lasers (2005) (1)
- Microscopy of semiconducting materials 1991 : proceedings of the Institute of Physics conference held at Oxford University, 25-28 March 1991 (1987) (1)
- Impact of virtual substrate Ge composition on strained Si MOSFET performance (2003) (1)
- Non-Destructive Characterisation of Rapid Thermally Annealed N+-Doped Polysilicon Using Spectroscopic Ellipsometry (1995) (0)
- Two-photon fluorescence imaging of GaN micro-LED arrays (2003) (0)
- FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD (2018) (0)
- An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging (2000) (0)
- Far-infrared (THz) electroluminescence from Si/SiGe quantum cascade heterostructures (2003) (0)
- The study of compound semiconductor heterostructures by High-resolution transmission electron microscopy (1991) (0)
- Advances in Microscopy of Semiconducting Materials Featured at 6th International Conference (1989) (0)
- Cover Picture: Spontaneous Emission Control in Micropillar Cavities Containing a Fluorescent Molecular Dye (Adv. Mater. 6/2006) (2006) (0)
- Enhanced performance from SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10μm x 10μm Si Pillars (2002) (0)
- Microscopy of Semiconducting Materials. Proceedings of the Institute of Physics Conference, Series Number 117 Bristol‐Philadelphia, New York 1991, Printed by J. W. Arrowsmith Ltd., Bristol. 801 pages, ISBN 0‐85498‐406‐2, £ 80.00 (1993) (0)
- Crystalline nanostructures in porous silicon and their relation to optical and electronic properties (1993) (0)
- Microscopy of Semiconducting Materials : 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK (2000) (0)
- Organic Semiconductor Micro-Pillar Processed by Focused Ion Beam Milling (2005) (0)
- TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology (2010) (0)
- What's New In The Microscopy Of Semiconductors? (1987) (0)
- Optimisation of the optical emission of closely stacked bilayers of InAs/GaAs quantum dots (2003) (0)
- Towards SiGe Terahertz VCSELs (2004) (0)
- Influence of composition on the Piezo-electric effect in InGaAs/GaAs quantum dots (2002) (0)
- Transmission Electron Microscopy of Semiconductors (1992) (0)
- Measurement of the nanoscale roughness of advanced MOSFET layer structures (2002) (0)
- MOVPE grown quantum cascade lasers: single mode performance and structural quality (2005) (0)
- Atomistic modelling of strain relaxation effects in quantum dots (2001) (0)
- Development of a novel SEM microgripper (2010) (0)
- Silicon germanium quantum cascade heterostructures for far-infrared emission (2002) (0)
- Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers (2005) (0)
- TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate (1991) (0)
- Analysis of terahertz-emitting SiGe quantum cascade structures by transmission electron microscopy (2003) (0)
- Transmission electron microscopy of micro- and nanostructures in semiconductors (1996) (0)
- Gate-oxide interface roughness analyses for oxidation on strained and unstrained vicinal Si surfaces by transmission electron microscopy (2003) (0)
- Advanced TEM analysis of strain-balanced Si/SiGe resonant tunnelling diode structures (2003) (0)
- Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy (2005) (0)
- Characterization of In0.3Ga0.7As(N) quantum wells in (001) GaAs using TEM (2018) (0)
- Microscopy of Semiconducting Materials 1989, Proceedings of the Royal Microscopical Society Conference Held at Oxford University, 10-13 April 1989 (1989) (0)
- Silicon germanium quantum cascade heterostructures for infrared emission (2004) (0)
- Studies of Ultra-High Speed Silicon Crystal Growth From The Melt By Use of Conventional and High Resolution Transmission Electron Microscopy (1985) (0)
- Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-μm InAs quantum dots (2005) (0)
- Microscopy of semiconducting materials : proceedings of the 15th conference, 2-5 April, 2007, Cambridge, UK (2008) (0)
- Energy-Loss Filtered Imaging of Segregation-Induced Interface Broadening in SiGe/Si p-Channel MOSFET Device Structures (1999) (0)
- Characterisation of In1–x Ga x As/InP heterostructures and superlattices grown by atmospheric pressure MOCVD (2020) (0)
- Electron Microscope Characterization of Pulse Annealed Semiconductors (1980) (0)
- The microscopy of semiconducting materials (1980) (0)
- Silicon Quantum Cascade Lasers for THz Sources (Invited Paper) (2005) (0)
- Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures (2003) (0)
- A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM (2005) (0)
- The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots (2000) (0)
- Organic-Based Micropillar Structure Fabrication by Advanced Focused Ion Beam Milling Techniques (2008) (0)
- An organic two dimensional photonic crystal microcavity processed by focused ion beam milling (2005) (0)
- Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques (2005) (0)
- Interface roughness scattering in p-Si/SiGe asymmetric quantum wells (2007) (0)
- Optimisation of the optical emission of bilayers of quantum dots (2003) (0)
- Atomistic modelling of strain profiles and piezoelectric charge distributions in InGaAs/GaAs quantum dots (2002) (0)
- SINGLE CRYSTAL TERBIUM DOPED YTTRIUM ALUMINUM GARNET PHOSPHOR PRODUCED BY ION IMPLANTATION (1982) (0)
- Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy (2006) (0)
- Polarization effects in near-ground-state quantum wire lasers (2000) (0)
- Field emission from iron-filled carbon nanotubes observed in-situ in the scanning electron microscope (2008) (0)
- Washington Holds First Federal Conference on Commercial Applications of Superconductivity (1987) (0)
- Composition and Strain Dependence of the Piezoelectric Coefficients in Semiconductor Alloys (2007) (0)
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