Antoni Rogalski
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Researcher ORCID ID = 0000-0002-4985-7297
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Physics
Antoni Rogalski's Degrees
- PhD Physics University of Warsaw
- Masters Physics University of Warsaw
- Bachelors Physics University of Warsaw
Why Is Antoni Rogalski Influential?
(Suggest an Edit or Addition)Antoni Rogalski's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Semiconductor ultraviolet detectors (1996) (1122)
- Infrared detectors: status and trends (2003) (975)
- Third-generation infrared photodetector arrays (2009) (687)
- HgCdTe infrared detector material: history, status and outlook (2005) (685)
- Infrared detectors: an overview (2002) (643)
- Recent progress in infrared detector technologies (2011) (418)
- History of infrared detectors (2012) (318)
- Terahertz detectors and focal plane arrays (2011) (299)
- Quantum well photoconductors in infrared detector technology (2003) (245)
- Quantum-dot infrared photodetectors: Status and outlook (2008) (238)
- Progress in focal plane array technologies (2012) (211)
- Infrared Detectors, Second Edition (2010) (207)
- New concepts in infrared photodetector designs (2014) (199)
- Narrow-gap semiconductor photodiodes (2000) (197)
- Challenges of small-pixel infrared detectors: a review (2016) (170)
- InAs/GaSb type-II superlattice infrared detectors: Future prospect (2017) (167)
- Intrinsic infrared detectors (1988) (160)
- Infrared Photon Detectors (1995) (158)
- InAs/GaInSb superlattices as a promising material system for third generation infrared detectors (2005) (135)
- High-Operating-Temperature Infrared Photodetectors (2007) (133)
- Infrared Detectors for the Future (2009) (125)
- Uncooled long wavelength infrared photon detectors (2004) (125)
- Barrier infrared detectors (2014) (93)
- Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes (2001) (89)
- Next decade in infrared detectors (2017) (83)
- Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes (1988) (82)
- Material considerations for third generation infrared photon detectors (2007) (82)
- HOT infrared photodetectors (2013) (82)
- Photovoltaic effects in GaN structures with p‐n junctions (1995) (79)
- Two-dimensional infrared and terahertz detectors: Outlook and status (2019) (77)
- Kinetics of photoconductivity in n‐type GaN photodetector (1995) (73)
- New material systems for third generation infrared photodetectors (2008) (72)
- Infrared devices and techniques (2017) (71)
- Type-II superlattice photodetectors versus HgCdTe photodiodes (2019) (67)
- Infrared devices and techniques (revision) (2014) (67)
- InAs1−xSbx infrared detectors (1989) (66)
- Toward third generation HgCdTe infrared detectors (2004) (65)
- Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers. (2019) (64)
- Optical detectors for focal plane arrays (2004) (64)
- Comparison of the performance of quantum well and conventional bulk infrared photodetectors. (1997) (59)
- Infrared detectors at the beginning of the next millennium (2001) (58)
- Heterostructure infrared photovoltaic detectors (2000) (56)
- Assessment of quantum dot infrared photodetectors for high temperature operation (2008) (55)
- Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors (2007) (55)
- HgCdTe barrier infrared detectors (2016) (54)
- Hg(1−x)MnxTe as a new infrared detector material (1991) (53)
- Antimonide-based Infrared Detectors: A New Perspective (2018) (52)
- Competitive technologies of third generation infrared photon detectors (2006) (51)
- New ternary alloy systems for infrared detectors (1994) (49)
- Effect of dislocations on performance of LWIR HgCdTe photodiodes (2000) (48)
- Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes (2010) (45)
- Band-to-band recombination in InAs1−xSbx (1985) (43)
- Insight into performance of quantum dot infrared photodetectors (2009) (42)
- Opto-Electronics Review (2004) (41)
- Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes (1999) (40)
- New generation of infrared photodetectors (1998) (40)
- Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors (2014) (40)
- Third-generation infrared photon detectors (2003) (39)
- Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays (1999) (37)
- Graphene-based materials in the infrared and terahertz detector families: a tutorial (2019) (36)
- PERFORMANCE LIMITATIONS OF PHOTON AND THERMAL INFRARED DETECTORS (1997) (35)
- New trends in semiconductor infrared detectors (1994) (35)
- Performance modeling of MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector (2012) (35)
- MOCVD growth of Hg₁₋xCdxTe heterostructures for uncooled infrared photodetectors (2004) (34)
- Modelling of MWIR HgCdTe complementary barrier HOT detector (2013) (34)
- InAs/GaSb type-II superlattice infrared detectors: three decades of development (2017) (33)
- Long-wavelength HgCdTe photodiodes: n + -on-p versus p-on-n structures (1995) (32)
- Simplified model of dislocations as a SRH recombination channel in the HgCdTe heterostructures (2012) (32)
- Infrared and Terahertz Detectors, Third Edition (2018) (31)
- Comment on ‘‘Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk Hg1−xCdxTe’’ [J. Appl. Phys. 74, 4774 (1993)] (1996) (30)
- Semiconductor detectors and focal plane arrays for far-infrared imaging (2013) (29)
- Growth and properties of MOCVD HgCdTe epilayers on GaAs substrates (2005) (28)
- Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data (1996) (28)
- Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors (2005) (28)
- Hg1-xZnxTe as a potential infrared detector material (1989) (28)
- InAsSb-Based Infrared Photodetectors: Thirty Years Later On (2020) (27)
- Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes (2012) (27)
- Computer modeling of dual-band HgCdTe photovoltaic detectors (2000) (27)
- Infrared Thermal Detectors (2010) (26)
- New trends in infrared detector technology (1994) (26)
- Intrinsic carrier concentration and effective masses in InAs1−xSbx (1989) (26)
- Trends in Performance Limits of the HOT Infrared Photodetectors (2021) (25)
- MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors (2013) (25)
- Intrinsic carrier concentrations and effective masses in the potential infrared detector material, Hg1−xZnxTe (1988) (25)
- Narrow-Gap Semiconductors for Infrared Detectors (2011) (24)
- Performance of mercury cadmium telluride photoconductive detectors (1991) (24)
- MOCVD HgCdTe heterostructures for uncooled infrared photodetectors (2005) (24)
- Semiconductor superlattices and quantum wells for infrared optoelectronics (1993) (23)
- Competitive technologies for third generation infrared photon detectors (2006) (23)
- Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes (2011) (23)
- Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays (1999) (23)
- Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors (2014) (22)
- The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys (2012) (22)
- Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate (2018) (22)
- MWIR barrier detectors versus HgCdTe photodiodes (2015) (22)
- Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes (1982) (21)
- Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range (2013) (20)
- MOCVD Grown HgCdTe Barrier Structures for HOT Conditions (July 2014) (2014) (20)
- Semiconductor ultraviolet photodetectors (1996) (20)
- Surface smoothness improvement of HgCdTe layers grown by MOCVD (2009) (20)
- Performance prediction of p-i-n HgCdTe long-wavelength infrared HOT photodiodes. (2018) (20)
- New material systems for third generation infrared detectors (2009) (19)
- Detection of optical radiation (2017) (18)
- Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy (2016) (18)
- Improvement in performance of high-operating temperature HgCdTe photodiodes (2011) (18)
- Narrow-Gap Semiconductor Materials (2000) (18)
- Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate (2016) (17)
- Generation-recombination effects in high temperature HgCdTe heterostructure photodiodes (2004) (17)
- Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy (2017) (17)
- Recent progress in third generation infrared detectors (2010) (17)
- Chapter 2 – Comparison of photon and thermal detector performance (2002) (17)
- Control of acceptor doping in MOCVD HgCdTe epilayers (2010) (16)
- Doing Hirsch proud; shaping H-index in engineering sciences (2013) (16)
- Performance of p+−n HgCdTe photodiodes (1992) (16)
- HgCdTe buried multi-junction photodiodes fabricated by the liquid phase epitaxy (2002) (16)
- Dual-band infrared detectors (2000) (16)
- Insight on quantum dot infrared photodetectors (2009) (15)
- Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate (2018) (15)
- Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices (2015) (15)
- Infrared thermal detectors versus photon detectors: I. Pixel performance (1997) (15)
- Comparison of performance of quantum dot and other types of infrared photodetectors (2008) (15)
- Theoretical modeling of InAsSb/AlAsSb barrier detectors for higher-operation-temperature conditions (2014) (15)
- Dark current modeling of MWIR type-II superlattice detectors (2012) (15)
- Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes (2017) (14)
- AlGaN ultraviolet detectors (1997) (14)
- Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes (2019) (14)
- Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition (2016) (14)
- Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology (2016) (13)
- Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors (2013) (13)
- Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector (2014) (13)
- Mercury Cadmium Telluride Photodiodes at the Beginning of the Next Millennium (Review Paper) (2001) (13)
- 1/ $f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber (2015) (12)
- Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes (2009) (12)
- Enhanced Performance of HgCdTe Midwavelength Infrared Electron Avalanche Photodetectors With Guard Ring Designs (2020) (12)
- Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors (2018) (12)
- Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors (2023) (12)
- Quantum well infrared photoconductors in infrared detectors technology (2002) (12)
- Modeling of HgCdTe LWIR detector for high operation temperature conditions (2013) (12)
- High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes (2010) (12)
- Modeling of InAsSb/AlAsSb nBn HOT detector's performance limit (2013) (12)
- Growth of MOCVD HgCdTe heterostructures for uncooled infrared photodetectors (2005) (11)
- Theoretical modeling of long wavelength n+‐on‐p HgCdTe photodiodes (1996) (11)
- Photoelectromagnetic, Magnetoconcentration, and Dember IR Detectors (2007) (11)
- Infrared photon detectors versus thermal detectors (1998) (10)
- Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy (2018) (10)
- New Insights into the Ultimate Performance of Hgcdte Photodiodes (2022) (10)
- Temperature dependence of the RoA product for lead chalcogenide photovoltaic detectors (1981) (10)
- GaAs/AlGaAs quantum well infrared photoconductors versus HgCdTe photodiodes for long-wavelength infrared applications (1994) (10)
- Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres (2011) (10)
- Analysis of the response time in high-temperature LWIR HgCdTe photodiodes operating in non-equilibrium mode (2013) (10)
- Hg-based alternatives to MCT (2001) (10)
- Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates (2019) (10)
- Third generation infrared detectors (2006) (10)
- Detectivity limits for PbTe photovoltaic detectors (1980) (9)
- Performance comparison of barrier detectors and HgCdTe photodiodes (2014) (9)
- Guest Editorial: Semiconductor Infrared Detectors (1994) (9)
- MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions (2014) (9)
- Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures (1999) (9)
- Mid-Wavelength Infrared nBn for HOT Detectors (2014) (9)
- Calculation of the carrier lifetime in Hg1−xZnxTe (1988) (9)
- Status of HgCdTe photodiodes at the Military University of Technology (2003) (8)
- Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes (2010) (8)
- Performance comparison of barrier detectors and HgCdTe photodiodes (2014) (8)
- Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling (2019) (8)
- Investigation on the InAs1–xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy (2018) (8)
- Comparison of performance limits of infrared detector materials (2002) (8)
- Enhanced Performance of HgCdTe Long-Wavelength Infrared Photodetectors With nBn Design (2020) (8)
- Influence of dislocations on the performance of Hg1−xCdxTe graded gap photoresistors (1988) (8)
- Dark current suppression in HOT LWIR HgCdTe heterostructures operating in non-equilibrium mode (2015) (8)
- Morphology issues of HgCdTe samples grown by MOCVD (2009) (7)
- Modeling of HOT (111) HgCdTe MWIR detector for fast response operation (2014) (7)
- Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs (2020) (7)
- Influence of dislocations on the performance of 3 to 5 μm Hg1-xCdxTe graded gap photoresistors (1989) (7)
- Performance limits of room-temperature InAsSb photodiodes (2010) (7)
- Novel uncooled infrared detectors (2010) (7)
- Performance of p+-n HgCdTe photodiodes (1993) (7)
- Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector (2013) (7)
- Selected papers on semiconductor infrared detectors (1992) (7)
- A modified hot wall epitaxy technique for the growth of CdTe and Hg1−xCdxTe epitaxial layers (1990) (6)
- Surface leakage current in HgCdTe photodiodes (2002) (6)
- Influence of air on the electrical properties of Pb1-xSnxTe layers on a mica substrate (1980) (6)
- The performance of Hg1−xZnxTe photodiodes (1990) (6)
- Uncooled long-wavelength infrared photon detectors (2004) (6)
- INFRARED PHOTOVOLTAIC DETECTORS (1997) (6)
- The Intrinsic Carrier Concentration in Pb1−xSnxTe, Pb1−xSnxSe, and PbS1−xSex (1989) (6)
- Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices (2002) (6)
- InGaAs versus HgCdTe for short-wavelength infrared applications (1999) (6)
- Two-colour HgCdTe infrared detectors operating above 200 K (2008) (6)
- 2D Materials in Infrared Detector Family (2019) (6)
- Response time study in unbiased long wavelength HgCdTe detectors (2017) (6)
- The performance of Hg1−xMnxTe photodiodes (1989) (5)
- Electrical and optical performance of midwave infrared InAsSb heterostructure detectors (2018) (5)
- Semiconductor infrared detectors (1992) (5)
- Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique (2018) (5)
- 2D material infrared and terahertz detectors: status and outlook (2023) (5)
- 2D Materials for Infrared and Terahertz Detectors (2020) (5)
- Long-wavelength n+-on-p HgCdTe photodiodes: theoretical predictions and experimental data (1995) (5)
- MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation (2015) (5)
- Enhanced numerical analysis of three-color HgCdTe detectors (2007) (5)
- Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique (2017) (5)
- Detectivities of WS2/HfS2 heterojunctions (2022) (5)
- Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors (2016) (5)
- InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect (2017) (5)
- Comparison of performance limits of HOT HgCdTe photodiodes and colloidal quantum dot infrared detectors (2020) (5)
- Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures (2003) (5)
- HgCdTe infrared detectors: historical prospect (2003) (5)
- Infrared Detector Characterization (2018) (5)
- High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes (2010) (4)
- Numerical analysis of three-colour HgCdTe detectors (2007) (4)
- Progress in infrared detector technology (1997) (4)
- Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode (2014) (4)
- PbS1-x,Sex, (O⩽x ⩽1) photovoltaic detectors: carrier lifetimes and resistance-area product (1983) (4)
- Band-to-band recombination in GaxIn1−xSb (1987) (4)
- Infrared thermal detectors versus photon detectors: II. focal plane arrays (1997) (4)
- Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes (2010) (4)
- Analysis of VLWIR HgCdTe photodiode performance (2003) (4)
- Photovoltaic detectors Pb1−xSnxSe (0 ⩽ x ⩽ 0.12). Minority carrier lifetimes. Resistance-area product (1981) (4)
- PbTe photodiodes prepared by the hot-wall evaporation technique (1983) (4)
- Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures (2020) (4)
- Scaling infrared detectors—status and outlook (2022) (4)
- Dual-band infrared focal plane arrays (2000) (4)
- Heterostructure infrared photodiodes (2000) (4)
- Demonstration of Mid-Wave Type-II Superlattice InAs/GaSb Single Pixel Barrier Detector With GaAs Immersion Lens (2016) (4)
- Low-frequency noise in type-II superlattice MWIR nBn detector (2013) (4)
- Response time improvement of LWIR HOT MCT detectors (2017) (4)
- Comparison of the performance of quantum well and conventional bulk infrared photodetectors (1997) (3)
- Interband Quantum Cascade Infrared Photodetectors: Current Status and Future Trends (2022) (3)
- Fast Response Hot (111) HGCDTE MWIR Detectors (2017) (3)
- Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements (2019) (3)
- Photoresponse of GaN p-n junction and Schottky barrier ultraviolet photodetectors (1998) (3)
- n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique (1980) (3)
- p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy (2016) (3)
- New trends in infrared and terahertz detectors (2014) (3)
- Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate (2018) (3)
- HgTe-based photodetectors in Poland (2009) (3)
- Competition of infrared detector technologies (2003) (3)
- Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors (2016) (3)
- Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes (2012) (3)
- HGCDTE PHOTODIODES VERSUS QUANTUM WELL INFRARED PHOTOCONDUCTORS FOR LONG WAVELENGTH FOCAL PLANE ARRAYS (1998) (3)
- Auger-limited carrier lifetime in HgZnTe ambient temperature 10.6μm photoresistors (1989) (3)
- MWIR type-II InAs/GaSb superlattice interband cascade photodetectors (2013) (3)
- Outlook on quantum dot infrared photodetectors (2009) (3)
- Progress in performance development of room temperature direct terahertz detectors (2022) (3)
- Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design (2018) (3)
- High-sensitivity 8- to 14-μm HgCdTe photodetectors operated at ambient temperature (2000) (3)
- Calculation of the intrinsic carrier concentration in InAs1-x-xSb (1986) (3)
- Quantum Well Infrared Photodetectors (2010) (3)
- Advances in Infrared Technology and Applications: introduction. (2016) (2)
- Performance limitations of InGaAs photodiodes (1999) (2)
- Investigation of hillocks formation on (1 0 0) HgCdTe layers grown by MOCVD on GaAs epi-ready substrates (2017) (2)
- The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors (2017) (2)
- Intrinsic Carrier Concentration and Effective Masses in Hg1−xMnxTe (1990) (2)
- On the Performance of Non‐Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation (1985) (2)
- IV-VI Detectors (2010) (2)
- Computer modeling of carrier transport in binary lead salt photodiodes (1995) (2)
- International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals Held in Zakopane, Poland on 9-12 October 2000 (2001) (2)
- GaAs/AlGaAs QWIPs vs HgCdTe Photodiodes for LWIR Applications (1994) (2)
- Quantum Dot Infrared Photodetectors (2010) (2)
- Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates (2017) (2)
- High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy (2018) (2)
- Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe (2017) (2)
- RECENT PROGRESS IN HGCDTE INFRARED DETECTOR TECHNOLOGY (1998) (2)
- LPE growth of Hg1-xCdxTe heterostructures using a novel tipping boat (2000) (2)
- nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation (2014) (2)
- Recent progress in LWIR HOT photoconductors based on MOCVD grown (100) HgCdTe (2016) (2)
- Advanced Infrared Technology and Applications: introduction. (2018) (2)
- Liquid-phase epitaxial growth and characterization of In(Sb,Bi) (1999) (2)
- History of HgTe-based photodetectors in Poland (2010) (2)
- Study of the Effectiveness of Anodic Films as Surface Passivation for InAsSb Mid-Wave Infrared HOT Detectors (2018) (2)
- Heterostructure HgCdTe photovoltaic detectors (2001) (2)
- Progress in Quantum Dot Infrared Photodetectors (2021) (2)
- Comparison of mercury cadmium telluride LPE layers growth from Te-rich solution on (111)Cd0.95Zn0.05Te and (211)Cd0.95Zn0.05Te (1999) (2)
- Figure of merit for infrared detector materials (2022) (2)
- HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy (2001) (2)
- MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation (2015) (2)
- Commentary on the Record-Breaking Performance of Low-Dimensional Solid Photodetectors (2023) (1)
- Computer modeling of carrier transport in PbSnSe photodiodes (1994) (1)
- Related 2D-Material Detectors (2020) (1)
- Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes (1994) (1)
- Graphene-Based Detectors (2020) (1)
- A simple method of evaluating the performance of near-background-limited photodiodes (1985) (1)
- Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland (1997) (1)
- Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors (2020) (1)
- Lead Salt Photodiodes (2000) (1)
- Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland (1999) (1)
- Advanced Infrared Technology and Applications (2013) (1)
- GaN ultraviolet photodiodes : Photoresponse modelling (1997) (1)
- Performance Evaluation of Type-II Superlattice Devices Relative to HgCdTe Photodiodes (2022) (1)
- Type-II Superlattices (2018) (1)
- HgCdTe photodiode passivated with a wide-bandgap epitaxial layer (1999) (1)
- Theory of Photon Detectors (2010) (1)
- Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes (2018) (1)
- Analysis of temperature dependence of dark current mechanisms in MWIR type-II superlattice photodiodes (2013) (1)
- Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling (1997) (1)
- Solid state crystals, materials science and applications : 23-27 October 1994, Zakopane, Poland (1995) (1)
- Advanced Infrared Technology and Applications 2020: introduction to the feature issue. (2020) (1)
- The Intrinsic Carrier Concentration in Pb 1-x SnxTe, Pb 1-x SnxSe, and PbS 1-x Sex (1989) (1)
- RF magnetron sputtering deposition of CdTe passivation on HgCdTe (1998) (1)
- Detection of Optical Signals (2022) (1)
- Optical and Acoustical Methods in Science and Technology Infrared Detectors for the Future (2009) (0)
- Theoretical modelling of mercury cadmium telluride mid-wave detector for high temperature operation (2014) (0)
- Comparison of GaN Schottky barrier and p-n junction photodiodes (1998) (0)
- Characterization of p-on-n HgCdTe diffusion photodiodes (1995) (0)
- Theoretical utmost performance of the (1 0 0) long-wave HgCdTe Auger suppressed photodetectors grown on GaAs (2017) (0)
- High-operating temperatures InAsSb/AlSb heterostructure infrared detectors (2018) (0)
- Materials science and applications of solid crystals (2001) (0)
- Overview of Focal Plane Array Architectures (2010) (0)
- Relevant Properties of Graphene and Related 2D Materials (2020) (0)
- Lead Salt Photodetectors (2007) (0)
- Corrigendum to “Figure of merit for infrared detector materials” [Infrared Phys. Technol. 122 (2022) 104063] (2022) (0)
- Acrylamide and Agarose Gels (0)
- 15th International Workshop on Advanced Infrared Technology and Applications (AITA) (2019) (0)
- LWIR p+-n photodiodes fabricated with HgCdTe bulk material (1995) (0)
- Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids (2023) (0)
- Extrinsic Silicon and Germanium Detectors (2010) (0)
- 2.22 Electrical and piezoresistive properties of Pb1−xSnxTe thin films (1977) (0)
- Van der Waals two-color infrared detection (2022) (0)
- Intrinsic carrier concentration and effective masses in Hg1-xMnxTe (1991) (0)
- Fundamental Performance Limitations of Infrared Photodetectors (2007) (0)
- Absence of 1/f noise from diffusion and generation-recombination currents in p-i-n type-II superlattice MWIR detector (2015) (0)
- HgZnTe and HgMnTe Photodiodes (2000) (0)
- Thermal Detector Focal Plane Arrays (2010) (0)
- Modeling of HOT (111) HgCdTe MWIR detector for fast response operation (2014) (0)
- Van der Waals two-color infrared detection (2022) (0)
- Infrared Barrier Photodetectors (2018) (0)
- On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation (1985) (0)
- InAsSb heterojunction photodiodes grown by liquid phase epitaxy (1997) (0)
- Infrared photoelectronics : 30-31 August 2005, Warsaw, Poland (2005) (0)
- HgCdTe versus Other Material Systems: A Historical Look (2013) (0)
- Uncertainty in the estimation of the InAs1−xSbx intrinsic carrier concentration (2021) (0)
- Novel thermal detectors (2019) (0)
- XBn and cascade infrared detectors for mid-wave range and HOT conditions (2014) (0)
- Quantum-well infrared optoelectronic devices (1993) (0)
- Infrared Phys Technol 50 240-252 2007 (2016) (0)
- Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate. (2019) (0)
- Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate (2016) (0)
- Final Remarks (2020) (0)
- Contribution of Series Resistance inModelling of High-Temperature Type II Superlattice pi-n Photodiodes JarosławWróbel (2015) (0)
- GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors (1995) (0)
- Overestimating the Performance of Photon Ultraviolet Detectors (2023) (0)
- Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures (2005) (0)
- Chairman's Preface (2003) (0)
- Alternative Uncooled Long-Wavelength IR Photodetectors (2007) (0)
- Erratum to "computer modelling of carrier transport in PbSnSe photodiodes". Infrared Physics and Technology 35 (1994) 837-845 (1995) (0)
- Photon Detector Focal Plane Arrays (2019) (0)
- Focal Plane Arrays (2020) (0)
- Fundamental Detector Performance Limits (2020) (0)
- History of HgTe-based photodetectors in Poland (2010) (0)
- HgCdTe epitaxial layers fabricated by MOCVD (2003) (0)
- Materials Used for Intrinsic Photodetectors (2007) (0)
- Selected Papers on Infrared Detectors: Developments (2004) (0)
- On the performance of Hg1−xZnxTe photoresistors (1990) (0)
- Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector (2013) (0)
- Control of acceptor doping in MOCVD HgCdTe epilayers (2010) (0)
- 16th International Workshop on Advanced Infrared Technology and Applications (AITA 2021) (2022) (0)
- Colloidal Quantum Dot Infrared Detectors (2020) (0)
- III-V Detectors (2010) (0)
- Fundaments of Infrared Detection (2010) (0)
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