Anupam Madhukar
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Physics
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(Suggest an Edit or Addition)Anupam Madhukar's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100) (1990) (535)
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface (1979) (290)
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS (1979) (282)
- High detectivity InAs quantum dot infrared photodetectors (2004) (216)
- Excited states and energy relaxation in stacked InAs/GaAs quantum dots (1998) (210)
- Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100) (1994) (204)
- In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001) (1996) (198)
- Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots (1999) (188)
- Collective modes of spatially separated, two-component, two-dimensional plasma in solids (1981) (179)
- Quantum-Dot Infrared Photodetectors (2007) (177)
- InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth (1994) (175)
- Independent manipulation of density and size of stress-driven self-assembled quantum dots (1998) (144)
- Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region (2001) (140)
- Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs (1997) (135)
- Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring (1998) (130)
- The nature of molecular beam epitaxial growth examined via computer simulations (1988) (123)
- Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution (1999) (119)
- Temperature dependent optical properties of self-organized InAs/GaAs quantum dots (1999) (118)
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100) (1984) (111)
- XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 Interface (1980) (110)
- Mass transfer in Stranski–Krastanow growth of InAs on GaAs (1997) (109)
- Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001) (1996) (108)
- Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates (1998) (103)
- Strain‐dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures (1985) (101)
- Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems (1982) (100)
- Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields (1995) (98)
- Quantum size effect in self-organized InAs/GaAs quantum dots (2000) (94)
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms (1985) (94)
- Fabrication of Nanostructures by Hydroxylamine Seeding of Gold Nanoparticle Templates (2001) (91)
- Noise and photoconductive gain in InAs quantum-dot infrared photodetectors (2003) (91)
- Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems (1980) (89)
- Inas quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers (2002) (87)
- Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots (2002) (86)
- Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm. (2009) (83)
- Metal/silicon interface formation - The Ni/Si and Pd/Si systems (1981) (82)
- Exact Solution for the Diffusion of a Particle in a Medium with Site Diagonal and Off-Diagonal Dynamic Disorder (1977) (81)
- Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells (2001) (80)
- Monte‐Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity (1985) (79)
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study (1985) (76)
- Nanorobotic assembly of two-dimensional structures (1998) (75)
- EXCITATION TRANSFER IN SELF-ORGANIZED ASYMMETRIC QUANTUM DOT PAIRS (1998) (71)
- Direct and controlled manipulation of nanometer-sized particles using the non-contact atomic force microscope (1998) (70)
- Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures (1985) (70)
- Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements (1986) (69)
- Building and Manipulating Three-Dimensional and Linked Two-Dimensional Structures of Nanoparticles Using Scanning Force Microscopy (1998) (69)
- Manipulation of nanoparticles using dynamic force microscopy: simulation and experiments (1998) (68)
- Far from equilibrium vapour phase growth of lattice matched III-V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations (1983) (65)
- Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100) (1986) (65)
- Mechanisms of strained island formation in molecular‐beam epitaxy of InAs on GaAs(100) (1994) (65)
- MOLECULAR DYNAMICS STUDY OF COHERENT ISLAND ENERGETICS, STRESSES, AND STRAINS IN HIGHLY STRAINED EPITAXY (1997) (65)
- Nonradiative resonant excitation transfer from nanocrystal quantum dots to adjacent quantum channels. (2007) (63)
- Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures (1993) (62)
- Electronic structure of Si O 2 : α -quartz and the influence of local disorder (1980) (61)
- Many-body effects on the optical spectra of InAs/GaAs quantum dots (2000) (59)
- Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity (2002) (57)
- Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection (2002) (56)
- Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells (1986) (55)
- Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity (1985) (54)
- A high quantum efficiency preserving approach to ligand exchange on lead sulfide quantum dots and interdot resonant energy transfer. (2011) (54)
- Kinetic aspects of growth front surface morphology and defect formation during molecular‐beam epitaxy growth of strained thin films (1989) (52)
- A kinetic model for the thermal nitridation of SiO2/Si (1986) (51)
- Simulations of atomic level stresses in systems of buried Ge /Si islands. (2001) (51)
- Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substrates (1991) (51)
- Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self‐organization, and optical properties (1996) (51)
- Linking and Manipulation of Gold Multinanoparticle Structures Using Dithiols and Scanning Force Microscopy (1999) (45)
- Study of the ideal-vacancy-induced neutral deep levels in III-V compound semiconductors and their ternary alloys (1981) (42)
- In situ approach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates (1993) (42)
- The origin and nature of silicon band‐gap states at the Si/SiO2 interface (1981) (34)
- Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels (1998) (33)
- Alloy disorder scattering contribution to low‐temperature electron mobility in semiconductor quantum well structures (1984) (33)
- Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence (1997) (33)
- Optically active three‐dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B (1993) (33)
- Resonant Raman scattering in self-organized InAs'GaAs quantum dots (2000) (33)
- Nature of Stranski–Krastanow growth of InAs on GaAs(001) (1998) (32)
- Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence (1998) (32)
- Hot carrier relaxation in InAs/GaAs quantum dots (1998) (31)
- Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions (1990) (31)
- Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors (2008) (30)
- Growth of InxGa1−xAs on patterned GaAs(100) substrates (1990) (30)
- Study of the kinetics and mechanism of the thermal nitridation of SiO2 (1985) (30)
- Theory of chemisorption on metallic surfaces: Role of intra-adsorbate Coulomb correlation and surface structure (1976) (29)
- Real-Time Dynamics of Ca2+, Caspase-3/7, and Morphological Changes in Retinal Ganglion Cell Apoptosis under Elevated Pressure (2010) (29)
- A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy (1996) (28)
- Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth (1986) (28)
- Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study (1983) (28)
- Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature (1990) (27)
- Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth (1997) (27)
- In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates (1995) (27)
- Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices (2010) (26)
- Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces - A reflection high-energy electron diffraction dynamics study of GaAs/Al(x)Ga(1-x)As(100) multiple quantum wells (1986) (26)
- Atomistic simulation of nanostructured materials (1998) (25)
- Electronic structure of GaP–AlP(100) superlattices (1982) (25)
- Relation between reflection high‐energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B (1991) (24)
- A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures (1987) (24)
- Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy (1986) (23)
- Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature (1991) (23)
- The dynamics of energy and charge transfer in lead sulfide quantum dot solids (2014) (23)
- Realization of three-dimensionally confined structures via one-step in situ molecular beam epitaxy on appropriately patterned GaAs(111)B and GaAs(001) (1994) (23)
- Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior. (2005) (23)
- Tight‐binding study of the electronic structure of the InAs–GaSb (001) superlattice (1978) (22)
- Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study (1988) (22)
- Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates (1990) (22)
- Structural classification of layered dichalcogenides of group IV B, V B and VI B transition metals (1975) (22)
- Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy (1990) (22)
- Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots (2001) (22)
- Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. (2005) (22)
- Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer (2002) (21)
- Chemisorption on Transition-Metal Surfaces: Screening and Polarization versus the Intra-adsorbate Coulomb Interaction (1975) (21)
- Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substrates (1998) (21)
- High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells (1991) (21)
- Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator (1991) (20)
- Computer simulations of the role of group V molecular reactions at steps during molecular beam epitaxial growth of III-V semiconductors (1987) (20)
- Raman microprobe study of narrow InxGa1-xAs stripes on patterned GaAs(100) substrates (1991) (20)
- Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions (1988) (20)
- Distribution of nitrogen and defects in SiOxNy/Si structures formed by the thermal nitridation of SiO2/Si (1986) (19)
- Large-scale atomistic modeling of nanoelectronic structures (2000) (19)
- Spectroscopic ellipsometry and x‐ray photoelectron spectroscopy studies of the annealing behavior of amorphous Si produced by Si ion implantation (1985) (19)
- An x‐ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si (1986) (19)
- On the role of nuclear motions in electron and excitation transfer rates: Importance of transfer-integral dependence upon nuclear coordinate (1978) (19)
- Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001) (1997) (19)
- Molecular Dynamics Study of Coherent Island Energetics, Stresses, and Strains in Highly Strained Epitaxy [Phys. Rev. Lett. 79, 905 (1997)] (1997) (19)
- Ideal resistivity in one dimension (1977) (19)
- Design Consideration and Demonstration of Resonant-Cavity-Enhanced Quantum Dot Infrared Photodetectors in Mid-Infrared Wavelength Regime (3–5 $\mu{\rm m}$ ) (2010) (19)
- ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’ (1991) (19)
- Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces (1981) (18)
- Surface kinetics and growth interruption in molecular‐beam epitaxy of compound semiconductors: A computer simulation study (1989) (18)
- Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study (2001) (17)
- Near‐infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs (1992) (16)
- An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates (1993) (16)
- Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces (1987) (16)
- Chemisorption on Transition-Metal Surfaces: Electronic Structure (1973) (15)
- The electronic structure of Si/GaP(110) interface and superlattice (1981) (15)
- Creating Three-Dimensionally Confined Nanoscale Strained Structures Via Substrate Encoded Size-Reducing Epitaxy and the Enhancement of Critical Thickness for Island Formation (1995) (15)
- Realization of Y1Ba2Cu3O7−δ/Y-ZrO2 epitaxial configuration on silicon (100) by pulsed laser ablation without chemical removal of native surface oxide (1992) (15)
- High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode (1991) (15)
- Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies (1987) (15)
- Comment on “quantum theory of electron stimulated desorption” by W. Brenig (1976) (15)
- Prediction of kinetically controlled surface roughening: A Monte Carlo computer-simulation study (1983) (14)
- Kinetic processes in molecular beam epitaxy of GaAs(100) and AlAs(100) examined via static and dynamic behavior of reflection high‐energy electron‐diffraction intensities (1986) (14)
- Imaging and direct manipulation of nanoscale three-dimensional features using the noncontact atomic force microscope (1998) (14)
- Mechanism for resistivity minimum in amorphous ferromagnets (1974) (14)
- InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region (2001) (14)
- Dimerisation and charge ordering in linear chain organic conductors (1974) (14)
- Excitation transfer in novel self-organized quantum dot structures (1999) (14)
- Multifunctional all-dielectric nano-optical systems using collective multipole Mie resonances: toward on-chip integrated nanophotonics (2016) (13)
- Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1−xAs capping layers (2002) (13)
- Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots (1998) (13)
- Nanofeatures on GaAs (111)B via photolithography (1992) (13)
- Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si(001) islands: An atomistic simulation study (2003) (13)
- Summary Abstract: Transition metal silicides: Trends in the bonding in the bulk and at the interface (1982) (13)
- Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100) (1989) (13)
- Stress and strain fields from an array of spherical inclusions in semi-infinite elastic media: Ge nanoinclusions in Si (2003) (13)
- Immobilizing Au Nanoparticles on SiO 2 Surfaces Using Octadecylsiloxane Monolayers (2001) (13)
- Adatom processes near step‐edges and evolution of long range order in semiconductor alloys grown from vapor phase (1992) (13)
- The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPS (1982) (13)
- Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots (2005) (13)
- Picosecond time‐resolved measurements of electroabsorption in an InGaAs/GaAs multiple quantum well p‐i‐n modulator (1992) (13)
- Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells (1987) (13)
- On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum ☐es (1998) (12)
- The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures (1990) (12)
- Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (2002) (12)
- Design, development, and testing of real-time feedback controllers for semiconductor etching processes using in situ spectroscopic ellipsometry sensing (2002) (12)
- Receptor-ligand-based specific cell adhesion on solid surfaces: hippocampal neuronal cells on bilinker functionalized glass. (2006) (12)
- A combined single‐phonon Raman and photoluminescence study of direct and indirect band‐gap AlxGa1−xAs alloys grown by molecular‐beam epitaxy (1989) (12)
- Towards hierarchical nanoassembly (1999) (12)
- Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas (2001) (12)
- The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100) (1991) (11)
- Mesa-top quantum dot single photon emitter arrays: growth, optical characteristics, and the simulated optical response of integrated dielectric nanoantenna-waveguide systems (2016) (11)
- Magnetic ordering versus lattice distortion in very narrow bands (1973) (11)
- Specular beam intensity behavior in reflection high‐energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga0.7As on GaAs(100) and implications for inverted interfaces (1987) (11)
- Chemisorption bonding and bond lengths on transition metal surfaces: Effect of coordination and valency saturation (1975) (11)
- Theory of peierls instability in tight-binding quasi one-dimensional solids (1974) (11)
- InAs/GaAs square nanomesas: Multimillion-atom molecular dynamics simulations on parallel computers (2003) (11)
- Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation (1988) (10)
- Electron-phonon interaction and cyclotron resonance in two-dimensional electron gas☆ (1979) (10)
- Two-dimensional effects and effective masses of the InAs/GaSb (001) superlattices (1979) (10)
- Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study (1988) (10)
- The electronic structure of InAs/GaSb(001) superlattices-two dimensional effects☆ (1979) (10)
- Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular‐beam epitaxy (1995) (10)
- Realization of high mobilities at ultralow electron density in GaAs‐Al0.3Ga0.7As inverted heterojunctions (1990) (10)
- Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si (1990) (10)
- Disorder activated optical modes and the phonon dispersion of AlxGa1-xAs lattice vibration (1989) (9)
- Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin GaAsAxGa1−xAs(100) single quantum wells grown by MBE under RHEED determined conditions☆ (1987) (9)
- Cation and anion ideal vacancy induced gap levels in some III–V compound semiconductors (1981) (9)
- Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy (1987) (9)
- Quantum size effect in the transport of electrons in semiconductor quantum well structures (1984) (9)
- Observation of quantum confinement effect away from the zone center in a spectroscopic ellipsometry study of the dielectric function of single Al 0.3 Ga 0.7 As/GaAs/Al 0.3 Ga 0.7 As square quantum wells (1987) (9)
- Nanotemplate-directed InGaAs/GaAs single quantum dots: Toward addressable single photon emitter arrays (2014) (9)
- The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures☆ (1986) (9)
- Monte Carlo simulation of the growth of A1−xBx layers on lattice‐matched substrates in molecular beam epitaxy (1982) (9)
- Electronic Structure of Alpha-Quartz and the Influence of Some Local Disorder: A Tight Binding Study, (1978) (9)
- Low-temperature electron transport in a one-side modulation-doped Al0•33Ga0•67As/GaAs/Al0•33Ga0•67As single quantum well structure (1987) (8)
- Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems. (2006) (8)
- Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces (2002) (8)
- Intrinsic and extrinsic interface states at lattice matched interfaces between III–V compound semiconductors: The InAs/GaSb(110) system (1980) (8)
- Molecular beam epitaxial growth of III‐V compound semiconductor in the presence of a low‐energy ion beam: A Monte Carlo simulation study (1987) (8)
- Interpretation of the electronic spectra of chemisorbed systems (1976) (8)
- Sweep‐out times of electrons and holes in an InGaAs/GaAs multiple quantum well modulator (1994) (8)
- Highly pure single photon emission from spectrally uniform surface-curvature directed mesa top single quantum dot ordered array (2018) (8)
- Coupled electron-phonon system in two dimensions and its implications for inversion layers (1977) (7)
- Electron-phonon coupling and resonant magneto-phonon effect in optical behaviour of two-dimensionally confined charge carriers☆ (1980) (7)
- Observation of a correlation between twin orientation and substrate step direction in thin GaAs films grown on intentionally misoriented Si (100) (1990) (7)
- In-Situ Spectroscopic Ellipsometry and Optical Emission Studies of CF 4 /O 2 Plasma Etching of Silicon Nitride (1999) (7)
- Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers (1999) (7)
- Modeling and simulation of thermal chlorine etching of gallium arsenide with application to real-time feedback control (2002) (7)
- A derivation for the energy dependence of the density of band tail states in disordered materials (1982) (7)
- Surface kinetic considerations for molecular-beam epitaxy growth of high-quality inverted heterointerfaces (1988) (7)
- Method for calculating the electronic structure induced by short-ranged defects in semiconductors (1982) (7)
- Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: A computer simulation study (1989) (7)
- Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n–i–n photodetector structures (2002) (7)
- Time‐resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate (1996) (7)
- Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots. (2016) (6)
- An XPS study of silicon/noble metal interfaces - Bonding trends and correlations with the Schottky barrier heights (1983) (6)
- Photodetectors: UV to IR (2003) (6)
- Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching (1992) (6)
- Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile (1988) (6)
- Low‐temperature C‐V characteristics of Si‐doped Al0.3Ga0.7As and normal n‐GaAs/N‐Al0.3Ga0.7As isotype heterojunctions grown via molecular beam epitaxy (1991) (6)
- Nanocrystal-semiconductor interface: Atomic-resolution cross-sectional transmission electron microscope study of lead sulfide nanocrystal quantum dots on crystalline silicon (2014) (6)
- Semiconductor Nanostructures: Nature’s Way (1995) (6)
- Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems (1981) (6)
- All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors (1992) (6)
- Study of the interface electronic structure of a model metal-semiconductor interface (1978) (6)
- High contrast ratio self‐electro‐optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry–Perot modulator (1992) (6)
- Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study (2004) (6)
- Externally deposited phase‐compensating dielectric mirrors for asymmetric Fabry–Perot cavity tuning (1994) (6)
- Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE (1990) (6)
- Surface‐relaxation‐controlled mechanism for occurrence of long range ordering in III‐V semiconductor alloys grown by molecular beam epitaxy (1991) (5)
- Influence of transverse electric field on the photoluminescence linewidth of excitonic transition in quantum wells: Alloy disorder and composition fluctuation contributions (1987) (5)
- Post-growth tuning of inverted cavity InGaAs/AlGaAs spatial light modulators using phase compensating dielectric mirrors (1995) (5)
- Study of the electronic structure of model (110) surfaces and interfaces of semi-infinite III-V compound semiconductors: The GaSb-InAs system (1980) (5)
- Dark current reduction and operational wavelength shift in normal incidence InAs-GaAs QDIPs through the introduction of AlGaAs layers in the active region of the detector (2000) (5)
- Stress-Engineered Quantum Dots: Nature’s Way (2002) (5)
- RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces (1987) (4)
- Some Computer Simulations of Semiconductor Thin Film Growth and Strain Relaxation in a Unified Atomistic and Kinetic Model (1995) (4)
- Photonic components for neural net implementations using incoherent-coherent holographic interconnections (1990) (4)
- A machine condition transfer function approach to run-to-run and machine-to-machine reproducibility of III-V compound semiconductor molecular beam epitaxial growth (1999) (4)
- Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions (1988) (4)
- Phonon-assisted polar exciton–transitions in self-organized InAs/GaAs quantum dots (2000) (4)
- On-Chip Integrated Single Photon Source-Optically Resonant Metastructure Based Scalable Quantum Optical Circuits (2020) (4)
- InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy (1995) (4)
- Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near‐infrared cathodoluminescence study (1992) (4)
- In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs (1990) (4)
- Quantum dots infrared photodetectors (2003) (4)
- Planarized spatially-regular arrays of spectrally uniform single quantum dots as on-chip single photon sources for quantum optical circuits (2020) (4)
- Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes (1997) (4)
- REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACE (1980) (4)
- One-step in-situ quantum dots via molecular beam epitaxy (1993) (4)
- Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110) (1979) (3)
- A neural-network-based approach to determining a robust process recipe for the plasma-enhanced deposition of silicon nitride thin films (2001) (3)
- Two-color InAs/InGaAs quantum-dot infrared photodetectors for mid-and long-wavelength infrared detection (2006) (3)
- Cellular prostheses: functional abiotic nanosystems to probe, manipulate, and endow function in live cells. (2010) (3)
- N-body problems: Atomistic simulation of nanostructured materials (1998) (3)
- Contributions of the electron—electron and electron—phonon interactions to the carrier effective mass in inversion layers (1978) (3)
- Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE (1990) (3)
- Formation of an anomalous acoustic plasmon in spatially separated plasmas (1980) (3)
- Growth of high quality strained AlxGa1−xAs/In0.26Ga0.74As/AlzGa1−zAs quantum wells and the effect of silicon nitride encapsulation and rapid thermal annealing (1992) (3)
- High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al 0.2 Ga 0.8 As Blocking Layers (2001) (3)
- Excited States of InAs/GaAs Quantum Dots (2001) (3)
- Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots (2000) (3)
- Low‐energy ion beam effects on the molecular beam epitaxical growth of III‐V compound semiconductors: A Monte Carlo simulation study (1989) (3)
- Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments (1987) (3)
- Surface reconstruction, steps, and ordering in semiconductor alloys grown from vapor phase (1992) (3)
- Observation of the Influence of Strain Induced deep Level Defects on the Electroabsorption Characteristics of InGaAs/GaAs (100) Multiple Quantum well Structures and Implications for Light Modulators (1991) (2)
- Multimillion-Atom Simulations of Atomic-Level Surface Stresses and Pressure Distribution on InAs/GaAs Mesas (1999) (2)
- Real‐time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs (1993) (2)
- On-chip scalable highly pure and indistinguishable single-photon sources in ordered arrays: Path to quantum optical circuits. (2021) (2)
- Initial Stages of Molecular Beam Epitaxical Growth of Highly Strained Inxga1-XAs on Gaas (100) (1990) (2)
- Photodetectors: UV to IR (2003) (2)
- Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates (1991) (2)
- Quantum theory of magnetotransport in two-dimensional systems with electron-impurity, electron-phonon and electron-electron interactions (1982) (2)
- Multifunctional Control of On-chip Generated Photons by a Single Collective Mode in Monolithically Integrated All-Dielectric Scalable Optical Circuits. (2017) (2)
- The Formation and Evolution of InAs 3D Islands on GaAs(001) and a Comparative C-AFM and NC-AFM Study of InAs 3D Islands (1996) (2)
- Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform (1995) (2)
- Quantum Optical Networks Using a Single Mie Resonance of On-Chip Dielectric Light Manipulating Elements and their Scalable Integration with Quantum Dot Single Photon Sources (2018) (2)
- Effect of geometry on stress relaxation in InAs∕GaAs rectangular nanomesas: Multimillion-atom molecular dynamics simulations (2005) (2)
- Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates (1997) (2)
- Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching (1991) (2)
- Highly strained pseudomorphic InxGa1−xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates (1991) (2)
- On-Chip Light Manipulation via Single Collective Multifunctional Mie Resonance in On-Chip Integrated Scalable Quantum Optical Networks (2017) (1)
- Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wells (1993) (1)
- Vertically integrated photonic multichip module architecture for vision applications (2000) (1)
- Buried spatially-regular array of spectrally ultra-uniform single quantum dots for on-chip scalable quantum optical circuits (2020) (1)
- Pulsed Ruby laser induced surface oxidation of GaAs using reactive quenching at the liquid-solid interface (1992) (1)
- Transport measurements on a high mobility, ultralow carrier concentration inverted GaAs/AlGaAs heterostructure (1990) (1)
- High contrast optically bistable optoelectronic switches based on InGaAs/GaAs(100) conventional and inverted asymmetric Fabry–Pérot modulators grown via molecular‐beam epitaxy (1992) (1)
- Realisation of doped-channel MISFETs with high breakdown voltage in AlGaAs/InGaAs based material system (1994) (1)
- Physical and Chemical Effects of Focused Ga-Ion Beam on GaAs (100) (1992) (1)
- Erratum: Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator [Appl. Phys. Lett. 59, 1664 (1991)] (1991) (1)
- InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques (1995) (1)
- Summary Abstract: Monte Carlo simulation of growth and nature of binary and pseudobinary model systems grown via molecular beam epitaxy (1982) (1)
- On-chip quantum optical networks comprising co-designed spectrally uniform single photon source array and dielectric light manipulating elements (2017) (1)
- Electronic properties of InAs/GaAs quantum dots (2001) (1)
- RESISTIVITY MINIMUM IN AMORPHOUS FERROMAGNETS (1974) (1)
- Electronic Structure and Optical Properties of Spectrally Uniform Nanotemplate-Directed InGaAs/GaAs Quantum Dots in Regular Arrays. (2016) (1)
- Optical Investigation Of Resonant Mixing Between Electronic And Optical Vibrational Levels In GaAs/AlGa1-xAs Single Quantum Wells (1988) (1)
- INDIRECT EXCHANGE MECHANISM OF MAGNETIC ORDERING IN AMORPHOUS ALLOYS (1974) (1)
- Vertically-integrated photonic multichip module architecture for vision applications (2004) (1)
- In-Situ Growth of Three-Dimensionally Confined Structures on Patterned GaAs (111)B Substrates (1992) (1)
- Thermal annealing effect on the Al0.3Ga0.7As surface studied by a combined XPS, HREELS and LEED measurement (1988) (1)
- A new method for calculating non-ideal point defect induced electronic structure: Application to GaAs1−xPx:O∗☆ (1982) (1)
- Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100) (1988) (1)
- On-Chip Scalable Coupled Single Photon Emitter- All Dielectric Multifunctional Quantum Optical Circuits Working on a Single Collective Mie Resonance (2018) (1)
- Real-Time Feedback Control of Thermal CL 2 Etching of GaAs Based on In-Situ Spectroscopic Ellipsometry (1997) (1)
- Theory of s-d Exchange Interaction in Dilute Magnetic Alloys: Formalism (1973) (1)
- Resonant mixing between electronic and optical vibrational states of a quantum well structure (1987) (1)
- Manipulation of gold nanoparticles in liquids using MAC Mode TM Atomic Force Microscopy (1999) (1)
- Alloy Disorder Effects In Molecular Beam Epitaxically Grown AlxGa1-xAs Examined Via Raman And Rayleigh Scattering And Near Edge Luminescence (1988) (1)
- Spectroscopic Ellipsometry (SE) Based Real-Time Control of CF,/O:! Plasma Etching of Silicon Nitride (2000) (1)
- An Elementary Model for Control of a Semiconductor Etching Process (2002) (0)
- Photonic Technology for Implementation of Generalizable Neural Networks: A Synthetic Approach (1993) (0)
- Multi-variable adaptive control of CF/sub 4//O/sub 2/ plasma etching of silicon nitride thin films (2001) (0)
- Ex-situ Cavity Phase Tuning of InGaAs/AlGaAs Multiple Quantum Well Based Inverted Asymmetric Fabry-Perot Reflection Modulators (1993) (0)
- Modeling and Validation of Sensor and Actuator Dynamics for, And Real-Time Feedback Control of Thermal Chlorine Etching of Gallium Arsenide (1999) (0)
- Growth, Behavior, and Applications of Strained InGaAs/GaAs Multiple Quantum well Based Asymmetric Fabry-Perot Reflection Modulators (1991) (0)
- On-chip Integrable Spectrally Uniform Ordered Quantum Dot Single Photon Source Array with High Emission Purity (>98.99%) for Scalable Quantum Optical Networks (2019) (0)
- Theory of the transverse static magnetoconductivity in a two-dimensional electron-phonon system (1982) (0)
- Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A. (2000) (0)
- Spectroscopic ellipsometry (SE) based real-time control of CF/sub 4//O/sub 2/ plasma etching of silicon nitride (2000) (0)
- Electron-Diffraction Analysis of Growth of GaAs (1986) (0)
- Self-Organized Quantum Dots for High-Performance Multi-Spectral Infrared Photodetectors (2010) (0)
- Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs ( 100 ) substrates by molecularbeam epitaxy (2013) (0)
- Energetics and Relaxations of Adatom, Dopant and Vacancy Related Complexes on Normal and Strained GaAs(001) Surface (1989) (0)
- XPS Study of Oxide/GaAs and SiO2/Si Interfaces (1982) (0)
- Inducing repetitive action potential firing in neurons via synthesized photoresponsive nanoscale cellular prostheses. (2013) (0)
- Studies of the Electronic Properties of Two-Dimensionally Confined Carriers in MIS (Metal-Insulator-Semiconductor) Inversion/Accumulation Layers, Heterojunctions and Quantum Wells. (1983) (0)
- Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors. (1985) (0)
- Grating outcoupling from large area rib waveguide arrays fabricated on GaAs/AlGaAs by selective ion beam milling (1989) (0)
- Integrated Quantum Networks of Mie-resonance based All-Dielectric Optical Circuits with Single Photon Sources for Quantum Entanglement (2019) (0)
- On-chip Integrable Spectrally Uniform Quantum Dot Single Photon Source Array for Scalable Quantum Optical Networks: Study of QD symmetry and Excitonic Structure (2018) (0)
- Molecular Beam Epitaxial Growth and Characterization of III-V Compound Semiconductor Single and Multiple Interface Structures. (1986) (0)
- Magneto Transport and Magneto Optical Characteristics of Inversion and Accumulation Layers. (1982) (0)
- Report on NanoElectronics ,-Photonics , and – Magnetics : Acquiring (2004) (0)
- Optical Investigations of InAs Growth on GaAs and Lasing in Singly and Multiply Stacked Island Quantum Boxes (1996) (0)
- potential, with further development, for high-performance infrared sensing. (2007) (0)
- Surface Modification Engineered Assembly of Novel Quantum Dot Architectures for Advanced Applications (2008) (0)
- Triggered mesa-top single photon emitter arrays and on-chip integration with dielectric nanoantenna-waveguide systems (2016) (0)
- Multi-Variable Adaptive Control of CF4/O2 Plasma Etching of Silicon (2001) (0)
- Nanotemplate-Enabled Arrays of Highly Heterogeneous Nanostructures for Infrared Detection and Power Generation (2015) (0)
- A theory of cyclotron resonance in a two-dimensional quantum Wigner crystal (1982) (0)
- THEORY OF s-d EXCHANGE INTERACTION IN DILUTE MAGNETIC ALLOYS (1971) (0)
- Fundamental and Technological Limitations of Asymmetric Cavity MQW InGaAs/GaAs Spatial Light Modulators (1990) (0)
- Resonant Raman scattering in self-organized InAs ÕGaAs quantum dots (2000) (0)
- Coupling-of-length-scale approach for multiscale atomistic-continuum simulations: Atomistically-induced stress distributions in Si/Si_3N 4 nanopixels (2001) (0)
- Some Novel In Situ Studies of Strained Semiconductor Epitaxy on Patterned/Compliant Substrates (1999) (0)
- Process Modeling & In-Situ Sensor Feedback Based Adaptive Control of Molecular Beam Epitaxy and Ion-Assisted Reactive Etching of Advanced Semiconductor Structures (2001) (0)
- On-chip Scalable Multifunctional Optical Networks Integrated with Quantum Dot Single Photon Source: Simulated Response of Dielectric Nanoantana-Waveguide-Beamsplitter Unit (2018) (0)
- Normal-incidence quantum dot infrared photodetectors (2002) (0)
- Multi-Million Atom Molecular-Dynamics Simulations of Stresses in Si(111)/Si3N4 Nanopixels (1999) (0)
- Reply to "Comment on `Theory of chemisorption on metallic surfaces: Role of intra-adsorbate Coulomb correlation and surface structure' " (1978) (0)
- Measurements of tunneling times and enhanced diffusion in strained-layer InGaAs quantum well diodes (1992) (0)
- Integrated colloidal nanocrystal and epitaxical quantum nanostructures (2005) (0)
- Erratum: “Mass transfer in Stranski–Krastanow growth of InAs on GaAs” [Appl. Phys. Lett. 70, 640 (1997)] (1997) (0)
- The Si/Si_3N 4 Interface and Si/Si_3N 4 Submicron Mesa: A Multi-million Atom Molecular Dynamics Study (1998) (0)
- XPS Study of SiO2 and the Si/SiO2 Interface (1982) (0)
- CATHODOLUMINESCENCE STUDY OF SELECTIVELY GROWN SELF- ASSEMBLED InAs/GaAs QUANTUM DOTS (0)
- Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors. (1986) (0)
- All-optical photonic switches by the monolithic integration of inverted asymmetric Fabry-Perot modulators/ detectors and heterojunction photo-transistors (1992) (0)
- Theoretical studies of the interface electronic properties of tetrahedrally coordinated semiconductors (1987) (0)
- Adaptive Optoelectronic Eyes: Hybrid Sensor/Processor Architectures (2006) (0)
- The Growth And Performance Of Strained InGaAs/GaAs Multiple Quantum Well Based Asymmetric Fabry-Perot Reflection Modulators (1991) (0)
- InAs quantum dots infrared photodetectors (2003) (0)
- Photonic neural networks based on incoherent/coherent double angular multiplexing (1992) (0)
- Spectrally Uniform Quantum Dot Single Photon Emitter Array for Integrated Nanophotonics: Electronic Structure and Optical Properties (2017) (0)
- Stress-Engineered Quantum Dots for Multispectral Infra-Red Detector Arrays (2006) (0)
- Optical Studies of Laterally Confined Quantum Well Structures Grown on EX-Situ and IN-Situ Patterned Substrates (1992) (0)
- Integration of nanocrystal quantum dots with crystalline semiconductor substrates: Structure, Stability, and Optical response (2004) (0)
- Kinetic Aspects of Lattice Mismatch in Molecular Beam Epitaxial Growth on Planar and Patterned Substrates (1990) (0)
- Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs/InGaAs/AlGaAs quantum wells (1993) (0)
- A New Paradigm for On-chip Quantum Photonics: Highly Uniform Single Photon Source Arrays (2021) (0)
- Mesa-Top Single Quantum Dot Arrays as Single Photon Sources: A new paradigm for On-chip Quantum Photonics (2020) (0)
- Cathodoluminescence study of thermal activation of carriers in InAs/GaAs(001) self-assembled quantum dots (2005) (0)
- High Contrast, 2D Spatial Light Modulators (SLMs) Using InGaAs/AlGaAs Quantum Wells Operating at 980nm (1997) (0)
- Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at (2007) (0)
- Theory of s-d exchange scattering in dilute magnetic alloys☆ (1970) (0)
- Resonant Landau Level-Optical Phonon Interaction in Two-Dimensionally Confined Charge Carrier Systems (1980) (0)
- Atomistic Nature Of Molecular Beam Epitaxially Grown GaAs/AlxGa1-xAs - As Revealed In Luminescence And Raman Spectroscopies (1989) (0)
- Experimental Investigations of Transport and Optical Properties of III-V Quantum Well Structures Grown Via Molecular Beam Epitaxy Under Optimal Growth Conditions (1990) (0)
- Feedback control of thermal chlorine (Cl/sub 2/) etching of gallium arsenide (GaAs) using in-situ spectroscopic ellipsometry sensing (1998) (0)
- Erratum: ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’ [J. Appl. Phys. 69, 2219 (1991)] (1991) (0)
- Mie Resonance Based Quantum Optical Circuits Integrated with on-chip Single Photon Source Array for Quantum Information Processing (2021) (0)
- Nanoscale Photovoltaic Prosthesis For Inducing Repetitive Action Potential Firing in Nerve Cells (2011) (0)
- Real-Time Dynamics of Ca2+, Phosphatidylserine, Caspase-3/7, and Morphological Changes in Apoptosis: Retinal Ganglion Cells Under Elevated Pressure (2011) (0)
- Room temperature electroluminescence at 1.3 /spl mu/m from strained InAs/GaAs quantum dots (1999) (0)
- Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy (1988) (0)
- Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-V Compound Semiconductors (1997) (0)
- On-chip integrable spectrally-uniform quantum dot single photon emitter array with multifunctional dielectric light manipulation elements: Towards quantum information processing (2016) (0)
- Indistinguishable single photons from spatially-ordered array of highly efficient and pure mesa-top single quantum dots: A step closer to on-chip quantum optical circuits (0)
- In Situ Spectroscopic Ellipsometry for the Real Time Process Control of Plasma Etching of Silicon Nitride (1999) (0)
- Ca2+ Dynamics in Apoptosis: Real-Time Data and Mathematical Modeling (2012) (0)
- WF1.4 - On-chip Scalable Integrated Quantum Photonic Networks based on Quantum Dot Single Photon Source Array Integrated with Dielectric Light Manipulating Circuits (2019) (0)
- Optical behavior of nanocrystal quantum dots adsorbed on crystalline semiconductor substrates: Evidence for energy transfer (2005) (0)
- Cathodoluminescence Wavelength Imaging Study of Clustering in InAs/GaAs Self-Assembled Quantum Dots (2000) (0)
- High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System (1991) (0)
- Hybrid Silicon/gallium Arsenide Inverted Fabry-Perot Cavity MQW Spatial Light Modulators (1993) (0)
- All Ultra-High Vacuum In-Situ Growth & Processing Approaches to Realization of Semiconductor Nanostructure Arrays (1997) (0)
- Novel infrared detectors based on semiconductor quantum dots (2004) (0)
- Erratum: Distribution of nitrogen and defects in SiOxNy/Si structures formed by the thermal nitridation of SiO2/Si [J. Appl. Phys. 59, 972 (1986)] (1986) (0)
- Quantum Dot Single Photon Emitter Array Integrated with Dielectric Nanoantenna-Waveguide: Simulation of Multifunctional Optical Response (2017) (0)
- Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors (1991) (0)
- Selective manipulation of self-assembled quantum dot electronic states via use of a lateral potential confinement layer (2002) (0)
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