B. A. Joyce

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B. A. Joyce

Mathematics

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#9866

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Measure Theory

#1966

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#2389

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Mathematics

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B. A. Joyce's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Dynamics of film growth of GaAs by MBE from Rheed observations (1983) (768)
Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements (1985) (633)
Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying (1998) (254)
Oscillations in the surface structure of Sn-doped GaAs during growth by MBE (1981) (233)
Molecular beam epitaxy-fundamentals and current status (1990) (179)
Tin‐doping effects in GaAs films grown by molecular beam epitaxy (1978) (170)
RHEED Studies of Heterojunction and Quantum Well Formation during MBE Growth - from Multiple Scattering to Band Offsets (1985) (153)
Dynamic RHEED observations of the MBE growth of GaAs (1984) (146)
Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces (1984) (144)
Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy (1978) (142)
Current understanding and applications of the RHEED intensity oscillation technique (1987) (132)
GaAs(001)- c (44): A chemisorbed structure (1983) (126)
ISLAND NUCLEATION AND GROWTH ON RECONSTRUCTED GAAS(001) SURFACES (1998) (123)
Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A (1997) (117)
Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAs (1987) (110)
A correlation between electron traps and growth processes in n‐GaAs prepared by molecular beam epitaxy (1980) (109)
Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy (1997) (106)
Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs (1984) (105)
Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE (1978) (103)
SCANNING TRANSMISSION-ELECTRON MICROSCOPY STUDY OF INAS/GAAS QUANTUM DOTS (1998) (103)
Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations (1982) (102)
Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy (1996) (92)
The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces (1995) (91)
Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE (1980) (89)
Dynamic effects in RHEED from MBE grown GaAs(001) surfaces (1986) (84)
SURFACE CONTRAST IN TWO DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS/GAAS(110) HETEROEPITAXY (1997) (84)
An investigation of silicon-oxygen interactions using Auger electron spectroscopy (1971) (83)
Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited (1997) (81)
NUCLEATION AND GROWTH OF ISLANDS ON GAAS SURFACES (1997) (76)
Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films (1983) (72)
A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane (1992) (70)
The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon films (1969) (67)
Silicon doping of MBE-grown GaAs films (1983) (66)
A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes (1997) (65)
Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxy (1992) (63)
Electron beam-adsorbate interactions on silicon surfaces (1973) (62)
Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110) (1999) (57)
On the RHEED specular beam and its intensity oscillation during MBE growth of GaAs (1990) (51)
Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better (1991) (51)
Morphological model of reflection high‐energy electron‐diffraction intensity oscillations during epitaxial growth on GaAs(001) (1992) (51)
Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation (1998) (50)
RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures (1993) (49)
Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy (2001) (48)
The dependence of Auger electron yield on primary beam energy at normal and glancing incidence (1972) (48)
Comments on “RED intensity oscillations during MBE of GaAs” (1981) (46)
Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films? (1997) (45)
Structural studies of natural superlattices in group III-V alloy epitaxial layers (1993) (45)
Effect of arsenic species (As2 OR As4) on the crystallographic and electronic structure of MBE-grown GaAs(001) reconstructed surfaces (1983) (44)
Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4) (1996) (43)
Nucleation and growth mechanisms during MBE of III–V compounds (1999) (38)
Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system (1992) (38)
Incorporation kinetics of As2 and As4 on GaAs(110) (1997) (37)
Application of high-resolution electron-energy-loss spectroscopy to MBE grown GaAs(100) (1987) (37)
The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy (1993) (36)
Nucleation effects during MBE growth of Sn-Doped GaAs (1982) (36)
A model for the appearance of chevrons on RHEED patterns from InAs quantum dots (2001) (36)
The GaAs (001)−c(4×4) and (2×4) reconstructions: A comparative photoemission study (1984) (36)
Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs (1992) (35)
Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch (1999) (34)
The determination of mbe growth mechanisms using dynamic rheed techniques (1986) (34)
Temperature-dependent unstable homoepitaxy on vicinal GaAs(110) surfaces (1998) (34)
Temperature range for growth of autoepitaxial GaAs films by MBE (1978) (32)
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION INTENSITY OSCILLATIONS AND ANISOTROPY ON VICINAL ALAS(001) DURING MOLECULAR-BEAM EPITAXY (1993) (32)
THICKNESS-DEPENDENT ELECTRON ACCUMULATION IN INAS THIN FILMS ON GAAS(111)A: A SCANNING-TUNNELING-SPECTROSCOPY STUDY (1998) (32)
Some aspects of the surface behaviour of silicon (1973) (30)
The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al, Ga)As structures (1988) (29)
A generalized model for the reconstruction of {001} surfaces of III–V compound semiconductors based on a RHEED study of InSb(001) (1990) (29)
Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic (1998) (29)
Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films (1993) (27)
Basic studies of molecular beam epitaxy—past, present and some future directions (2004) (27)
Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology (1998) (27)
The occurrence of sharp exciton-like features in low temperature photoluminescence spectra from MBE grown GaAs (1982) (26)
DISLOCATION DISPLACEMENT FIELD AT THE SURFACE OF INAS THIN FILMS GROWN ON GAAS(110) (1998) (26)
Temporal intensity variations in RHEED patterns during film growth of GaAs by MBE (1983) (26)
Growth of III-V compounds on vicinal planes by molecular beam epitaxy (1990) (25)
Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers (1999) (24)
Si(001) growth dynamics during Si GSMBE from disilane (1992) (24)
A transmission electron microscopy (TEM) study of a wedge-shaped InAs epitaxial layer on GaAs (001) grown by molecular beam epitaxy (MBE) (1992) (24)
Simulation studies of Ge surface segregation during gas source MBE growth of Si/Si1−xGex heterostructures (1993) (24)
Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substrates (1982) (24)
Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy (1997) (23)
Surface segregation during molecular beam epitaxy : the site-blocking effects of surfactant atoms (1996) (23)
Transformation kinetics of homoepitaxial islands on GaAs(001) (2000) (23)
In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces (1992) (22)
Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane (1991) (22)
New insights on SiGe growth instabilities (1998) (22)
Interface structure of InAs grown on GaAs(001) surfaces by molecular beam epitaxy (1992) (21)
Nucleation mechanisms during MBE growth of lattice-matched and strained III–V compound films (1998) (21)
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides (1994) (21)
Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A (1997) (21)
Surface effects and growth dynamics in MBE of III–V compounds (1986) (20)
Direct observation of anisotropic step activity on GaAs(001) (1999) (20)
Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth (1987) (20)
Growth and characterization of Si1−xGex/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy (1994) (20)
The nature of island formation in the homoepitaxial growth of GaAs(110) (1995) (20)
Observation of interfacial plasmons on MBE-grown GaAs by high-resolution electron-energy-loss spectroscopy (1986) (20)
The location of silicon atoms and the initial stages of formation of the SiGaAs(001) interface studied by STM (1995) (19)
Optical study of germanium nanostructures grown on a Si(118) vicinal substrate (1999) (19)
Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE (1992) (19)
Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces (1979) (18)
Self organization of Ge dots on Si substrates : influence of misorientation (1998) (18)
Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane (1992) (18)
Growth modes in homoepitaxy on vicinal GaAs(110) surfaces (1999) (17)
Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy (1995) (17)
Formation process and ordering of self-assembled Ge islands (2000) (17)
Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane (1992) (17)
Different growth modes in GaAs(110) homoepitaxy (1996) (17)
Surface morphology during strain relaxation in the growth of InAs on GaAs(110) (1998) (17)
Arsenic surface segregation and incorporation in Si and Si1 − xGex during gas source molecular beam epitaxy (1997) (16)
A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001) (1992) (16)
Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A (1997) (15)
Growth kinetics and critical temperature measurements in MOMBE growth of GaAs with TMGa by RHEED (1993) (15)
RHEED studies of the surface morphology of α-Sn pseudomorphically grown on InSb(100) by MBE-a new kind of non-polar/polar system (1990) (14)
Nanoscale effects of arsenic kinetics on GaAs(001)-(2×4) homoepitaxy (1999) (14)
Quantum‐well‐wire growth by molecular‐beam epitaxy: A computer simulation study (1989) (14)
Elementary processes in the MBE growth of GaAs (1992) (14)
Silicon incorporation behaviour in GaAs grown on GaAs (111)A by molecular beam epitaxy (1996) (14)
In situ studies of III–V semiconductor film growth by molecular beam epitaxy (1999) (14)
RHEED studies of the growth of Si(001) by gas source MBE from disilane (1992) (14)
As/Ga ratio dependence of Ga adatom incorporation kinetics at steps on vicinal GaAs(001) surfaces (1993) (14)
Reflection‐high‐energy‐electron‐diffraction intensity oscillations of Si(111) during gas source molecular beam epitaxy (1992) (13)
Islands and defects on the growing InAs(001)-(2×4) surface (1999) (13)
RHEED studies of MOMBE growth using TMGa or TEGa with As2 (1992) (13)
The observation of monolayer and bilayer growth during the deposition of GaAs(110) films by molecular beam epitaxy (1993) (13)
Si‐induced island formation and surface ordering on GaAs(001)‐c(4×4) (1995) (13)
Reflection high energy electron diffraction intensity oscillation study of the growth of GaAs on GaAs(111)A (1994) (13)
A scanning tunnelling microscopy study of the deposition of Si on GaAs(001); implications for Si δ-doping (1995) (12)
Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy (1997) (12)
Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness (1996) (12)
A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces. (1983) (12)
Study of the epitaxial growth of GaAs(110) films by molecular beam epitaxy (1994) (12)
Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beams (1992) (12)
Self-limiting segregation and incorporation during boron doping of Si and SiGe (1999) (12)
Arsenic doping kinetics in silicon during gas source molecular beam epitaxy (1998) (12)
Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs (2000) (12)
In adatom migration studies by reflection high‐energy electron diffraction oscillations on vicinal InAs(001) surfaces (1993) (12)
RHEED intensity effects during the growth of InAs, InSb and In(As,Sb) by molecular beam epitaxy (1992) (12)
Incorporation of silicon during MBE growth of GaAs on (111)A substrates (1993) (12)
Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxy (1993) (11)
Long-range disorder effects on the GaAs(0 0 1) β2(2 × 4) surface (2005) (11)
Interface electronic structure of Pb on GaAs(001) (1982) (11)
The strain relaxation of In0.1Ga0.9As on GaAs (110) grown by molecular beam epitaxy (1995) (11)
Some comments on electron-beam-induced adsorption (1977) (11)
A systematic RHEED study of regular and random steps on GaAs(001) surfaces (1992) (11)
Surface and interface phonon and plasmon excitations in iii-v semiconductor materials (1987) (11)
The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane (2000) (11)
RHEED Intensity Oscillations During MBE Growth of III-V Compounds - An Overview (1988) (10)
Surface segregation effects of In in GaAs (1993) (10)
Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy (1990) (10)
Structural, compositional and optical properties of self-organised Ge quantum dots (2001) (10)
Molecular beam epitaxy of semiconductor films—atomic dimension control and the evaluation of crystal growth dynamics (1991) (10)
In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy (1996) (10)
The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates (1995) (10)
Optical studies of the growth of single monolayer wide InAs quantum wells on GaAs by MBE (1993) (9)
Influence of atomic hydrogen on step stability during homoepitaxial growth on vicinal GaAs surfaces (2006) (9)
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy (1995) (9)
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy (1997) (9)
Optical second harmonic generation studies of the nature of the oxide-covered and clean c(4 × 4) and (2 × 4) reconstructed GaAs(001) surfaces (1993) (9)
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy (1996) (9)
Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110) (2006) (8)
Optical monitoring of deposition and decomposition processes in MOCVD and MBE using reflectance anisotropy (1992) (8)
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy (1995) (8)
Relaxation kinetics of MBE grown GaAs(001) surfaces (1992) (8)
Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures (1987) (8)
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 (1993) (8)
In situ studies of the MBE growth of III–V systems using RHEED and STM (2003) (8)
Present status and future directions for MBE (1979) (8)
Island nucleation and growth during homoepitaxy on GaAs(0 0 1)-(2×4) (1999) (8)
Letters to the editorReply to comments on the interaction of oxygen with Si (111) surfaces (1972) (8)
Applications of RHEED to the study of growth dynamics and surface chemistry during MBE (1993) (8)
Bilayer reflection‐high‐energy‐electron‐diffraction intensity oscillations observed during growth on double‐domain Si(001) surfaces (1992) (7)
MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wells (1993) (7)
Unusual nanostructures of "lattice matched" InP on AlInAs (2014) (7)
A RHEED and RA study of MEE growth (1992) (7)
Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces (1999) (6)
The influence of stress on growth instabilities on Si substrates (1998) (6)
Molecular beam epitaxy: Recent trends and future developments (1988) (6)
Thermal desorption spectroscopy of condensed lead films on {100} GaAs surfaces (1981) (6)
Summary Abstract: A RHEED/ARPES/CORE level spectroscopic evaluation of the structure of MBE‐grown GaAs(001)‐2×4 surfaces (1985) (6)
The origin of spurious peaks in mass spectra (1976) (6)
A comparison of MBE and MOMBE/CBE growth mechanisms using modulated beam mass spectrometry and RHEED (1991) (6)
Surface structure and the origin of antisite domains in GaAs:Ge epitaxial films (1985) (6)
Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBE (1981) (5)
The epitaxy of silicon on quartz (1968) (5)
A reflection high-energy electron diffraction study of Si surfaces during gas source MBE growth from disilane (1992) (5)
Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110) (2005) (5)
RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE (1985) (5)
Rheed evidence for a domain structure of GaAs(001)-2x4 and -4x2 reconstructed surfaces (1982) (5)
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy (1995) (5)
Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy (1993) (5)
A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (0 0 1) oriented surfaces (2009) (5)
Modulated-beam studies of the layer-by-layer etching of GaAs(0 0 1) using AsBr3: identification of the reaction mechanism (1997) (5)
Investigation of surface reconstruction domain behaviour during Si-GSMBE (1993) (5)
The growth and electronic properties of α-Sn thin films grown on InSb(100) and (111) substrates by molecular beam epitaxy (MBE) (1991) (5)
The substrate orientation dependence of In atom incorporation during the growth of (In,Ga)As on GaAs by molecular-beam epitaxy (1998) (5)
Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy (1995) (5)
Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy (1996) (5)
Surface studies during growth of Si1−xGex/Si from gaseous Si and Ge hydrides (1993) (5)
Reflectance anisotropy from non-III-V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110) (1995) (4)
FUNDAMENTALS OF MOLECULAR BEAM EPITAXY( Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School) (1978) (4)
Kinetic and Surface Aspects of MBE (1985) (4)
molecular beam epitaxy (1981) (4)
A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films (2000) (4)
Influence of doping on facet formation at the SiO2/Si interface (1999) (4)
Gating high mobility silicon-germanium heterostructures (1997) (4)
Si1−xGex alloy growth on Si(111) surfaces from gaseous hydride sources (1993) (4)
Mechanisms of layer growth during molecular beam epitaxy of semiconductor films (1995) (4)
Re-entrant behaviour in GaAs(1 1 1)A homoepitaxy (1999) (4)
Transmission electron microscopy study of In0.25Ga0.75As epilayers grown on GaAs (001) by molecular beam epitaxy: The effect of epilayer thickness (1995) (4)
The role of excess arsenic during the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium and As2 (1994) (4)
APPLICATION OF HREELS TO MBE-GROWN III-V-MATERIALS (1987) (4)
Surface relaxation kinetics and growth interruption effects in GaAs/AlAs single quantum wells (1993) (4)
In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering (1986) (3)
Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy (1991) (3)
Nanopatterning of GaAs(110) vicinal surfaces by hydrogen-assisted MBE (2004) (3)
Interface Composition Profiles of MBE Grown GaP Films on GaAs Substrates (1981) (3)
Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy (1994) (3)
STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-doping (1996) (3)
Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures (1997) (3)
Monte Carlo Simulation of GaAs(001) Homoepitaxy (2000) (3)
Effect of hydrogen on the growth kinetics of Si(0 0 1) during GSMBE from disilane (1997) (3)
RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A (1997) (3)
Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy (1997) (3)
Kinetics and dynamics of Si GSMBE studied by reflectance anisotropy spectroscopy (1998) (3)
Dynamic reflectance anisotropy and reflectance measurements of the deposition of Si on GaAs(001)-c(4 × 4) (1997) (3)
The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates (1997) (3)
Intensity Oscillations in Reflection High Energy Electron Diffraction during Epitaxial Growth (1988) (2)
MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates (1997) (2)
Growth and Overgrowth of Ge/Si Quantum Dots: An Observation by Atomic Resolution HAADF-STEM Imaging (2004) (2)
Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy (1996) (2)
Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1 − xGaxAs on GaAs(001) surfaces by molecular beam epitaxy (1997) (2)
A reflection high‐energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy (1992) (2)
Tin as an n-type dopant in the molecular beam epitaxial growth of GaAs(111)A (1995) (2)
DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY (1982) (2)
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces (1996) (2)
DETERMINATION OF THE EXCESS SURFACE ARSENIC CONCENTRATION IN THE METALORGANIC MOLECULAR BEAM EPITAXIAL GROWTH OF GAAS USING TMGA AND AS2 (1995) (2)
A detailed time of flight study of the cracking pattern of trimethylgallium; implications for MOMBE growth (1996) (2)
Mechanisms and Anomalies in The Formation of Inas—Gaas(001) Quantum Dot Structures (2002) (2)
Fabrication of SiGe quantum devices by electron-beam induced damage (1997) (2)
Molecular Beam Epitaxy of III–V Compounds. Aspects of Growth Kinetics and Dynamics (1988) (2)
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy (1997) (1)
Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)A (1995) (1)
Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane (1992) (1)
A pulse staining method for delineating NN+ and PP+ junctions in silicon (1962) (1)
RHEED Studies and Interface Analysis of GaAs grown on Si(001) (1986) (1)
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy (1995) (1)
The structure of coherent and incoherent InAs/GaAs quantum dots (2005) (1)
Materials fundamentals of molecular beam epitaxy. By Jeffrey Y. Tsao, Academic Press, London 1992, softcover, 301 pp., £ 49,94, ISBN 0‐12‐701625‐2 (1993) (1)
Room temperature photoluminescence in the 1 μm region from InAs monolayer structures (1994) (1)
RHEED studies of semiconductor growth by MBE (1988) (1)
Transient growth rate change during gas source molecular beam epitaxy of Si1−xGex alloys (1993) (1)
Site occupation of Si atoms deposited on vicinal GaAs(001)-(2 × 4) surfaces (1996) (1)
The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy (2004) (1)
A Reflection High Energy Electron Diffraction–Reflectance Anisotropy Spectroscopy Study of Silicon Growth Dynamics During Gas Source Molecular Beam Epitaxy from Silanes (1998) (1)
Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A (1994) (1)
Phase-Separation and Associated Defects in Mbe Inasysb1-Y Epitaxial Layers (1991) (0)
Monitoring Surface Coverage and Reconstruction Changes Under GaAs AlAs and InAs MOCVD Conditions Using Reflectance Anisotropy (1992) (0)
Alternative Growth Techniques to Atmospheric Pressure MOCVD (1989) (0)
Incorporation of Sn on GaAs (111)A substrates by molecular beam epitaty (1995) (0)
Fundamental growth processes in the molecular beam epitaxy of III–V compounds – an historical perspective ☆ (2000) (0)
Missing ``Sheets'' in the Reciprocal Space Representation of the Disordered Surface with One-Dimensional Domain Boundaries (2001) (0)
Gas Dynamics Vol 4: Molecular Beams and Low Density Gas Dynamics (1975) (0)
The structure of uncapped, buried and multiple stacked Ge/Si quantum dots (2004) (0)
Growth and Optical-Properties of Natural Inas1-Xsbx Strained Layer Superlattices (1991) (0)
Semiconductor growth, surfaces and interfaces. Edited by G. J. Davies and R. H. Williams, Chapman & Hall, London 1994, IX, 158 pp., hardcover, £30.00, ISBN 0-412-57730-5 (1995) (0)
THE RELATIONSHIP BETWEEN REFLECTANCE ANISOTROPY AND ELECTRON DIFFRACTION IN THE DETECTION OF RECONSTRUCTION CHANGES OCCURRING AT III-V SEMICONDUCTOR SURFACES (1994) (0)
Surface Physics of Phosphors and Semiconductors (1976) (0)
Electron beam induced damage of silicon germanium (1996) (0)
Handbook on semiconductors, volume 1: Basic properties of semiconductors, 2nd ed. Edited by T. S. Moss and P. T. Landsberg, Elsevier, Amsterdam 1992, 1060 pp., hardback, $ 372, ISBN 0‐444‐88855‐1 (1993) (0)
The structure of uncapped and capped InAs/GaAs quantum dots (2018) (0)
Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014 (2016) (0)
Surface Hydrogen Effects on Ge Surface Segregation During Gas Source MBE (1993) (0)
Studies of compositional variations in germanium quantum dots grown on silicon. (2000) (0)
Facet formation in Si layers selectively grown on patterned substrates studied by different electron microscopy techniques (2018) (0)
RHEED Oscillations and Surface Structure of MBE grown GaAs-AlAs (1985) (0)
Surface Studies of MBE-Grown Semiconductor Films (1985) (0)
A Systematic TEM and Rheed Investigation of the MBE Growth of In x Ga 1−x As a Function of Composition (1990) (0)
Some observations on the controlled oxidation of silicon (1971) (0)
Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering (2003) (0)
Molecular beam epitaxy. By M. A. Herman and H. Sitter. Springer‐Verlag, Heidelberg 1989. xii, 382 pp., hardcover, DM 128. ISBN 3‐540‐19075‐9 (1990) (0)
New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy (1996) (0)
Simulation studies of Ge surface segregation during gas source MBE growth of heterostructures (1993) (0)
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy (1994) (0)
Essay review: Molecular beam epitaxy-fundamentals and current status (1990) (0)
Reflection High Energy Electron Diffraction (RHEED) Intensity Oscillations: Growth Modes and Growth Rates: A Critique (2021) (0)
Si/SiGe Modulation Doped Structures by Gas Source Molecular Beam Epitaxy using Arsenic as a Donor (1994) (0)
AN STM STUDY OF THE (2×4) AND c(4×4) RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY (1994) (0)

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