Barry Franklin Levine
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Physics
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(Suggest an Edit or Addition)Barry Franklin Levine's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Quantum‐well infrared photodetectors (1993) (1306)
- A New 10 μm Infrared Detector Using Intersubband Absorption in Resonant Tunneling GaAlAs Superlattices (1987) (503)
- Second and third order hyperpolarizabilities of organic molecules (1975) (489)
- Bond susceptibilities and ionicities in complex crystal structures (1973) (442)
- An organic crystal with an exceptionally large optical second‐harmonic coefficient: 2‐methyl‐4‐nitroaniline (1979) (379)
- Bond-Charge Calculation of Nonlinear Optical Susceptibilities for Various Crystal Structures (1973) (358)
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors (1990) (325)
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides (1987) (287)
- d-Electron Effects on Bond Susceptibilities and Ionicities (1973) (197)
- Molecular hyperpolarizabilities determined from conjugated and nonconjugated organic liquids (1974) (178)
- Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors (1992) (178)
- High‐detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector (1988) (168)
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity (1987) (160)
- Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors (1991) (153)
- Donor—acceptor charge transfer contributions to the second order hyperpolarizability (1976) (137)
- Nonlinear Susceptibility of GaP; Relative Measurement and Use of Measured Values to Determine a Better Absolute Value (1972) (134)
- GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings (1989) (129)
- Quantum Well Intersubband Transition Physics and Devices (1994) (124)
- InGaAs/InP long wavelength quantum well infrared photodetectors (1991) (110)
- Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector (1989) (100)
- Effects on hyperpolarizabilities of molecular interactions in associating liquid mixtures (1976) (98)
- Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors (1991) (97)
- Electrodynamical Bond-Charge Calculation of Nonlinear Optical Susceptibilities (1969) (96)
- Improved performance of quantum well infrared photodetectors using random scattering optical coupling (1994) (92)
- Large photoconductive gain in quantum well infrared photodetectors (1990) (88)
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ= 4.4 μm (1988) (87)
- A New Contribution to the Nonlinear Optical Susceptibilityi Arising from Unequal Atomic Radii (1970) (84)
- 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera (1991) (83)
- Bound-to-extended state absorption GaAs superlattice transport infrared detectors (1988) (79)
- Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures (1990) (78)
- Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range (1987) (77)
- Dependence of the performance of GaAs/AlGaAs quantum well infrared photodetectors on doping and bias (1991) (76)
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling (1987) (74)
- Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum (1988) (73)
- Long-wavelength 128*128 GaAs quantum well infrared photodetector arrays (1991) (68)
- Second order hyperpolarizability of a polypeptide α‐helix: Poly‐γ‐benzyl‐L glutamate (1976) (66)
- Surface vibrational spectroscopy using stimulated Raman scattering (1979) (66)
- Single photon detection at 1.3 μm using a gated avalanche photodiode (1984) (65)
- Modulated barrier photodiode: A new majority‐carrier photodetector (1981) (65)
- Room‐temperature 1.3‐μm optical time domain reflectometer using a photon counting InGaAs/InP avalanche detector (1985) (62)
- Analysis of the dark current in doped‐well multiple quantum well AlGaAs infrared photodetectors (1989) (62)
- 19 m cutoff long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors (1992) (60)
- Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−x barriers (1991) (60)
- Charge transfer complexes and hyperpolarizabilities (1977) (60)
- Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors (1992) (60)
- Long wavelength infrared 128*128 Al/sub x/Ga/sub 1-x/As/GaAs quantum well infrared camera and imaging system (1993) (58)
- New Transient electrical polarization phenomenon in sawtooth superlattices (1983) (56)
- Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layers (1983) (54)
- Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy (1990) (54)
- New graded band‐gap picosecond phototransistor (1983) (54)
- Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate (1986) (53)
- Optically Modulated X-Ray Diffraction (1970) (53)
- Solvent dependent hyperpolarizability of a merocyanine dye (1978) (51)
- Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy (1987) (50)
- A New Planar InGaAs–InAlAs Avalanche Photodiode (2006) (49)
- Ultrahigh speed modulation‐doped heterostructure field‐effect photodetectors (1983) (47)
- Parametric Conversion of X Rays (1969) (46)
- Conjugated electron contributions to the second order hyperpolarizability of substituted benzene molecules (1975) (45)
- Ultrahigh sensitivity stimulated Raman gain spectroscopy (1980) (45)
- Very long wavelength InxGa1−xAs/GaAs quantum well infrared photodetectors (1994) (44)
- Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors (1994) (42)
- Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity (1982) (41)
- Nonlinear optical susceptibility of the thiogallate CdGa 2 S 4 (1974) (41)
- Tunneling emitter undoped quantum‐well infrared photodetector (1993) (39)
- GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption (1990) (38)
- High-resolution and high-sensitivity optical-time-domain reflectometer. (1988) (37)
- Ultraviolet dispersion of the donor–acceptor charge transfer contribution to the second order hyperpolarizability (1978) (36)
- Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100) (1986) (36)
- Nonlinear Optical Susceptibility of 5‐Nitrouracil (1972) (36)
- Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1−xAs photoconductors (1991) (36)
- Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy (1988) (36)
- Absolute signs of hyperpolarizabilities in the liquid state (1974) (36)
- Optical and transport properties of single quantum well infrared photodetectors (1993) (35)
- GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular‐beam epitaxy (1987) (34)
- InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector (1992) (34)
- Comment on ‘‘Performance limitations of GaAs/AlGaAs infrared superlattices’’ [Appl. Phys. Lett. 54, 2704 (1989)] (1990) (33)
- Infrared Detectors Reach New Lengths (1994) (33)
- Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode (1984) (33)
- Phase−matched second harmonic generation in a liquid−filled waveguide (1975) (33)
- Measurement of intersubband absorption in multiquantum well structures with monolithically integrated photodetectors (1990) (32)
- High‐resolution photovoltaic position sensing with Ti/Si superlattices (1986) (32)
- Magnetic Properties ofGa2−xFexO3 (1968) (32)
- 1.52 μm room-temperature photon-counting optical time domain reflectometer (1985) (32)
- Design and performance of very long-wavelength GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors (1994) (31)
- Nonlinear optical susceptibility of HgGa 2 S 4 (1976) (31)
- GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe (1988) (29)
- Frequency‐modulated shot noise limited stimulated Raman gain spectroscopy (1980) (29)
- Device physics of quantum well infrared photodetectors (1993) (29)
- Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layer (1983) (29)
- Origin of the unusual dependence of the nonlinear optical susceptibility on bond length for ionic ferroelectrics (1974) (27)
- High‐speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum‐well long‐wavelength infrared detector (1989) (26)
- 1 Gb/s Si high quantum efficiency monolithically integrable λ=0.88 μm detector (1995) (24)
- Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors (1999) (24)
- High performance InGaAs/GaAs quantum well infrared photodetectors (1994) (24)
- Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti (1986) (24)
- Hyperpolarizability of the pyridine–iodine charge transfer complex (1976) (24)
- 20 GHz high performance planar Si/InGaAs P-I-N photodetector (1997) (24)
- Negative differential photoconductance in an alternately doped multiple quantum well structure (1988) (23)
- Magnitude and dispersion of Kleinman forbidden nonlinear optical coefficients (1973) (20)
- Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection (1991) (19)
- Resonant exciton nonlinearities with spatial dispersion (1975) (18)
- Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients (1997) (17)
- High-quantum-efficiency low-threshold microcleaved alxga1-xas lasers (1982) (15)
- Optically integrated coherently coupled AlxGa1−xAs lasers (1983) (15)
- 10-MHz single photon counting at 1.3 micron (1984) (14)
- Comment on "Electric-field-induced optical second-harmonic generation in KtaO 3 and SrTiO 3 " (1976) (14)
- Infrared intersubband photoinduced charge polarization in asymmetrical quantum wells (1991) (13)
- Carbon‐doped long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors grown by organometallic vapor phase epitaxy (1992) (12)
- Stimulated Raman scattering from 20-A layers of silicon on sapphire (1980) (12)
- Optimization of 10-20 GHz avalanche photodiodes (1996) (12)
- Optical time domain reflectometer using a photon-counting InGaAs/InP avalanche photodiode at 1.3 μm (1985) (11)
- Electronically tuned synchronously pumped dye laser (1979) (10)
- Recent Progress in Quantum Well Infrared Photodetectors (1992) (9)
- Exciton Contributions to the Nonlinear Optical Susceptibility (1974) (9)
- -29dBm sensitivity, InAlAs APD-based receiver for 10Gb/s long-haul (LR-2) applications (2005) (8)
- Long wavelength GaSb photoconductive detectors grown on Si substrates (1986) (8)
- Detection of single 1.3 μm photons at 45 Mbit/s (1984) (7)
- Studies of molecular characteristics and interactions using hyperpolarizabilities as a probe (1977) (7)
- Picosecond AlxGa1−xAs modulation‐doped optical field‐effect transistor sampling gate (1983) (6)
- Quantum Well Infrared Photodetectors (QWIP) (1990) (6)
- Photoconductive Hg1−xCdxTe detectors grown by low‐temperature metalorganic chemical vapor deposition (1988) (6)
- Resonant dispersion of the nonlinear atomic scattering factor (1971) (6)
- High field hot electron transport through AlxGa1-xAs multiquantum well superlattices (1988) (6)
- High Detectivity D* = 1.0 X 10 10 cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector (1988) (6)
- Parametric down conversion of X-rays (1970) (5)
- Gas source molecular‐beam epitaxial growth of normal incidence GaAs/AlGaAs quantum well infrared photodetectors (1992) (5)
- GaAs/Al/sub x/Ga/sub 1-x/As quantum well infra-red photodetectors with cutoff wavelength lambda /sub c/=14.9 mu m (1991) (5)
- Infrared imaging using a 128 x 128 pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors (1992) (4)
- Error rate measurement for single photon detection at 1.3 μm (1984) (4)
- InP-based quantum-well infrared photodetectors (1991) (4)
- Long-wavelength GaAs quantum-well infrared photodetectors (1991) (4)
- Nonlinear optical susceptibility of AgI (1973) (4)
- The polarization properties of the parametric decay of X-rays (1970) (3)
- Optoelectronic integrated receiver (1997) (3)
- 15-um cut-off 128 x 128 quantum well infrared photodetectors (QWIPs) camera (1995) (3)
- New transport phenomena in variable gap semiconductors and their device applications (1985) (3)
- Photon-counting optical time-domain reflectometer using a planar InGaAsP avalanche detector (1986) (3)
- Infrared Intersubband Absorption At 8.2 μm In Doped Superlattices Of GaAs/AlAs (1987) (3)
- Surface Effects in the Nonlinear Interaction of X-Ray and Optical Fields (1973) (3)
- Long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors (1991) (2)
- Random Scattering Optical Couplers for Quantum Well Infrared Photodetectors (1994) (2)
- P-Type Quantum Well Infrared Photodetectors Grown by OMVPE (1991) (2)
- Comment on “Noise gain and detectivity of n-type GaAs/AlAs/AlGaAs quantum well infrared photodetectors” [Appl. Phys. Lett. 73, 1251 (1998)] (1999) (2)
- Molecular beam epitaxy of GaSb/AlSb optical device layers on Si(100) (1986) (2)
- Physics of Single Quantum well Infrared Photodetectors (1994) (2)
- Calculation of nonlinear optical susceptibilities in a wide range of compounds (1972) (2)
- F10 Effect on hyperpolarizabilities of molecular interactions in associating liquid mixtures (1976) (2)
- GaAs Quantum Well Infrared Photodetectors Grown by OMVPE (1990) (2)
- 18 channel 622 Mb/s CMOS receiver array for parallel optical interconnects (1995) (2)
- Calculation of the Direct Acoustically Induced Optical Harmonic Generation Coefficient. (1973) (2)
- InGaAs/InP multiple quantum-well long-wavelength photodetectors (1991) (1)
- Cu-0 Superconductors: Through a Lens, but Darkly (1987) (1)
- Long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors grown using metal organic chemical vapor deposition (1992) (1)
- A 27 picosecond photodetector with a modulation doped AlxGa1-xAs/GaAs heterostructure (1982) (1)
- Gaas Quantum Well Intersubband Absorption Tunneling Detectors Compatible With 10 μm Optical Computing (1988) (1)
- Parallel optical interconnection for high-speed data links (1995) (1)
- Double quantum scattering of X rays (1971) (1)
- Erratum: Absolute signs of hyperpolarizabilities in the liquid state (J. Chem. Phys. 60, 3856 (1974)J (1974) (1)
- Long Wavelength Infrared Detectors Based On Intersubband Absorption And Tunneling In Doped Multiquantum Well Superlattices (1988) (1)
- Producibility of GaAs quantum-well infrared photodetector arrays (1992) (1)
- Measurement of electron drift velocity in compositionally graded AlxGa1-xAs by time resolved optical picosecond reflectivity (1982) (1)
- Nonlinear optical properties of Zn3AgInS5and Zn5AgInS7 (1973) (1)
- Si/InGaAs ultralow dark current wafer bonded photodetectors (1999) (0)
- VB-4 lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate (1986) (0)
- Photoexcited coherent tunneling in 10µm multiquantum well photodetector (1987) (0)
- Comment on "Nonlinear Response of Bound Electrons to X Rays" (1973) (0)
- Erratum: Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection [Appl. Phys. Lett. 59, 552 (1991)] (1991) (0)
- Qwip - A New Technology (ption For Remote Sensing (1990) (0)
- Product comprising si-based photodetector (1996) (0)
- Photodetectors Quantum Well (1999) (0)
- Novel high-responsivity 10-μm GaAs quantum well infrared detectors (1987) (0)
- RESPONSE TO COMMENT ON: QUANTUM WELL INFRARED DETECTORS BY V. NATHAN ET AL. (1997) (0)
- Correction to "Nonlinear optical susceptibility of AgI" (1973) (0)
- IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al x Ga 1-x As layer (1983) (0)
- Detection of 10 μm Infrared Radiation via Intersubband Absorption in Doped GaAs Quantum Wells (1987) (0)
- Triple synchronization of a picosecond semiconductor laser with two mode-locked dye lasers. (1982) (0)
- COMMENT ON: NOISE GAIN AND DETECTIVITY OF N-TYPE GAAS/ALAS/ALGAAS QUANTUMWELL INFRARED PHOTODETECTORS APPL. PHYS. LETT. 73, 1251 (1998). AUTHORS' R EPLY (1999) (0)
- SUPERLATTICE TUNNELING DETECTORS OPERATING AT λ = 10 µm, BASED ON QUANTUM WELL INTERSUBBAND ABSORPTION (1987) (0)
- GaAs/AlGaAs multiple quantum well long wavelength infrared detector arrays using etched gratings (1989) (0)
- Gbit/s Integrated Si/InGaAsTelecommunication Photodetectors (1998) (0)
- Transmitters, receivers and detectors for high speed parallel optical interconnect links (1995) (0)
- Electron Beam Source Molecular Beam Epitaxy of AlxGa1-x as Graded Band Gap Device Structures (1988) (0)
- Response to “Comment on ‘Quantum well infrared detectors’ ” [J. Appl. Phys. 81, 7076 (1997)] (1997) (0)
- Long Wavelength GaAs/Al, Ga1 . As Quantum Well Infrared Photodetectors (QWIPs) (2017) (0)
- Hyperpolarizibilities of organic molecules (1974) (0)
- New quantum well long-wavelength ( lambda =10 mu m) detectors and novel superlattice transport physics (1988) (0)
- Very Long Wavelength Quantum Well Infrared Photodetectors (1994) (0)
- VIA-4 high-responsivity long-wavelength (λ = 10 µm) GaAs/AlxGa1-xAs multiquantum well superlattice tunneling detector (1987) (0)
- 15 Gb/s multichannel optical interconnect laser array transmitter operating at /spl lambda/=1.3 /spl mu/m (1995) (0)
- Quantum Well Intersubband Infrared Detectors (1989) (0)
- Correction to "Nonlinear optical properties of Zn 3 AgInS 5 and Zn 5 AgInS 7 " (1973) (0)
- A novel high performance planar InGaAs/InAlAs avalanche photodiode (2006) (0)
- Receiver array for optical interconnection (1997) (0)
- Physics and performance of quantum-well infrared photodetectors (QWIPs) (1993) (0)
- NOVEL 10 µm DETECTORS BASED ON INTERSUBBAND RESONANT ABSORPTION, PHOTOEXCITED TUNNELING AND HOT ELECTRON TRANSPORT IN MULTIQUANTUM WELL SUPERLATTICES OF GaAs/AIGaAs (1988) (0)
- 18 Micrometer Cutoff Long-Wavelength In_xGa_(1-x)As/GaAs Quantum-Well Infrared Photodetectors (1993) (0)
- IIIA-7 measurement of high electron drift velocity in a submicron heavily doped graded GAP Al<inf>x</inf>Ga<inf>1-x</inf>As layer (1983) (0)
- InGaAs/InAlAs Multiquantum Well Photodetectors in the Mid-Infrared Band (1989) (0)
- Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals (1990) (0)
- Receiver and transmitter arrays for optical networks (1996) (0)
- Nonlinear response of the harmonic and anharmonic oscillator to X-rays (1974) (0)
- Magnetic and Elastic Properties of Gallium-Ferrate (1969) (0)
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