Ben G. Streetman
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Engineering
Ben G. Streetman's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Ben G. Streetman's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Solid state electronic devices (1972) (1259)
- Negative differential resistance through real‐space electron transfer (1979) (269)
- Hot-Electron Transport in Semiconductors (1985) (254)
- Electric field enhanced emission from non‐Coulombic traps in semiconductors (1981) (204)
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+ (1979) (154)
- Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz (1999) (150)
- A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes (1999) (145)
- Solid state electronic devices (4th ed.) (1995) (132)
- Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses (2000) (120)
- Noise characteristics of thin multiplication region GaAs avalanche photodiodes (1996) (112)
- Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF + 2 -implanted silicon (1979) (96)
- Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture (1997) (90)
- Thin multiplication region InAlAs homojunction avalanche photodiodes (1998) (89)
- Deep‐level‐transient spectroscopy: System effects and data analysis (1979) (82)
- Study of Encapsulants for Annealing GaAs (1977) (80)
- Performance of thin separate absorption, charge, and multiplication avalanche photodiodes (1998) (78)
- Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product (1998) (76)
- Electrical profiling and optical activation studies of Be‐implanted GaAs (1977) (73)
- Recombination luminescence from ion implanted silicon (1976) (64)
- The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators (1988) (64)
- Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures (1980) (63)
- Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs‐GaAs quantum well (1990) (63)
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers (1981) (62)
- R.F. plasma deposition of silicon nitride layers (1978) (57)
- High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product (1997) (55)
- Demonstration of a new oscillator based on real‐space transfer in heterojunctions (1982) (54)
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon (1973) (53)
- Nitrogen isoelectronic trap in GaAs/sub 1-x/P/sub x/: II. Model calculation of the electronic states N/sub Gamma/and N/sub x/ at low temperture (1977) (52)
- Annealing studies of Be‐doped GaAs grown by molecular beam epitaxy (1978) (52)
- Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon (1978) (50)
- Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode (1990) (50)
- Quantization effects in inversion layers of PMOSFETs on Si (100) substrates (1996) (49)
- Low-voltage high-gain resonant-cavity avalanche photodiode (1991) (48)
- Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths (1980) (47)
- Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs (1979) (43)
- Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields (1981) (42)
- Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum (1976) (41)
- Growth conditions to achieve mobility enhancement in AlxGa1-xAs-GaAs heterojunctions by m.b.e. (1980) (39)
- Photoluminescence study of native defects in annealed GaAs (1975) (39)
- Low-threshold continuous-wave surface emitting lasers with etched void confinement (1994) (38)
- Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells (1989) (38)
- Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling (1978) (36)
- Thin film encapsulants for annealing GaAs and InP (1983) (36)
- A new transit-time device using quantum-well injection (1987) (36)
- Theoretical considerations regarding pulsed CO2 laser annealing of silicon (1980) (35)
- High-finesse resonant-cavity photodetectors with an adjustable resonance frequency (1996) (34)
- Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy (1997) (34)
- Photoluminescence from Si irradiated with 1.5‐MeV electrons at 100 °K (1976) (33)
- Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm (1998) (33)
- ZnSe/CaF2 quarter‐wave Bragg reflector for the vertical‐cavity surface‐emitting laser (1991) (32)
- Carrier Recombination and Trapping Effects in Transient Photoconductive Decay Measurements (1966) (32)
- Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys (1997) (31)
- Substitutional Defect Pairs in GaAs 1-x P x (1980) (31)
- Cross‐sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure (1995) (31)
- Iron and Chromium Redistribution in Semi‐Insulating InP (1981) (30)
- Photoluminescence from Be‐implanted GaAs (1975) (30)
- Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions (1997) (30)
- Investigation of low growth temperature AlGaAs and GaAs using metal–insulator–semiconductor diagnostic structures (1990) (30)
- Effect of composition and pressure on the nitrogen isoelectronic trap in GaAs 1-x P x (1976) (29)
- SIMS Studies of 9Be Implants in Semi‐Insulating InP (1982) (28)
- Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87) (1976) (28)
- InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth (1991) (28)
- Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region (2001) (28)
- Electron traps created by high temperature annealing in MBE n-GaAs (1981) (26)
- Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr (1987) (26)
- Waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (2000) (26)
- Temperature dependence of the ionization coefficients of Al/sub x/Ga/sub 1-x/As (2000) (26)
- Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma (2000) (24)
- Be‐implanted 1.3‐μm InGaAsP avalanche photodetectors (1979) (24)
- Photoluminescence of sodium-implanted zinc selenide (1975) (24)
- Temperature dependence of photoluminescence from Be‐implanted GaAs (1976) (24)
- QUANTUM DOTS AT THE NANOMETER SCALE : INTERDOT CARRIER SHUFFLING AND MULTIPARTICLE STATES (1999) (24)
- Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single‐barrier structures grown by molecular beam epitaxy (1989) (23)
- Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous silicon (1981) (23)
- Application of the Williams–Watts decay law to DX center capture and emission kinetics (1989) (23)
- High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m (2000) (23)
- Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wells (1990) (22)
- Evidence for photon recycling in InP (1988) (22)
- Plasma annealing of ion implanted semiconductors (1981) (21)
- Experimental search for excitonic superconductivity (1976) (21)
- Scanning tunneling microscopy of GaAs multiple pn junctions (1992) (21)
- Gallium distribution and electrical activation in Ga+-implanted Si (1979) (21)
- Studies of the 1.35-eV photoluminescence band in InP (1987) (21)
- CURRENT OSCILLATIONS IN Co‐DOPED Si p‐i‐n STRUCTURES (1967) (20)
- Solid State Electronic Devices: Global Edition (2015) (20)
- Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study (1999) (20)
- Resonant excitation of bound exciton luminescence in GaAs1−xPx alloys (1979) (20)
- Low-temperature photoluminescence from boron ion implanted Si (1974) (20)
- Luminescence in ZnSe with Na and Al doping (1973) (20)
- High-reflectivity Bragg mirrors for optoelectronic applications (1995) (20)
- Dynamics of Pulsed CO2 Laser Annealing of Silicon (1981) (20)
- Modulation of carrier distributions in delta‐doped quantum wells (1991) (19)
- Scanning tunneling microscopy of doping and compositional III–V homo‐ and heterostructures (1993) (19)
- Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells (1990) (19)
- Rapid thermal annealing of dual Si and P implants in InP (1989) (18)
- High quantum efficiency dual wavelength resonant‐cavity photodetector (1995) (18)
- Mode dependence on mirror contrast in Fabry-Perot microcavity lasers (1994) (18)
- Versatile double AC Hall effect system for profiling impurities in semiconductors (1977) (18)
- Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 /spl mu/m (1998) (18)
- Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures (1981) (18)
- A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor (1996) (18)
- Ambient‐induced surface effects on InP and GaAs (1986) (17)
- Temperature Response of GaAs in a Rapid Thermal Annealing System (1986) (17)
- Properties and applications of AlxGa1−xAs (0 ≤ χ ≤1) grown at low temperatures (1991) (17)
- Time dependence of current at high electric fields in AlxGa1-xAs-GaAs heterojunction layers (1981) (17)
- The role of defects in the diffusion and activation of impurities in ion implanted semiconductors (1984) (17)
- Hall effect and mobility in heterojunction layers (1982) (16)
- Observation of radiative surface states on InP (1987) (16)
- Nitrogen implantation in GaAs1−xPx. II. Annealing properties (1977) (16)
- Study of Surface Contamination Produced during High Dose Ion Implantation (1979) (16)
- Dual mirror and resonant cavity operating at 1.3 and 1.55 mu m (1994) (16)
- Phosphorus-overpressure rapid thermal annealing of indium phosphide (1987) (16)
- Type Conversion in Close Contact Rapid Thermal Annealing of Si‐Implanted InP (1987) (16)
- Annealing of nitrogen‐implanted GaAs1−xPx by a swept line electron beam (1980) (16)
- Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers (1994) (16)
- Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy (1974) (16)
- Bistability in an AlAs‐GaAs‐InGaAs vertical‐cavity surface‐emitting laser (1991) (16)
- Resonant-cavity enhanced (RCE) separate absorption and multiplication (SAM) avalanche photodetector (APD) (1995) (16)
- Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors (1987) (15)
- A proposed mechanism for radiative recombination through surface states on InP (1987) (15)
- Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies (1982) (15)
- Distortion of band-edge luminescence in InP due to self-absorption (1988) (15)
- Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy (1998) (15)
- Recombination luminescence from electron‐irradiated Li‐diffused Si (1973) (15)
- SIMS Studies of Semi‐Insulating InP Amorphized by Mg and Si (1982) (15)
- Photoluminescence studies of 4He‐ and 9Be‐implanted semi‐insulating InP (1982) (15)
- Superconductivity at the surface of PbTe (1973) (14)
- Properties of Be-implanted planar GaAs p-n junctions (1978) (14)
- Nitrogen implantation in GaAs1−xPx. I. Photoluminescence properties (1977) (14)
- Effects of Kikuchi scattering on reflection high‐energy electron diffraction intensities during molecular‐beam epitaxy GaAs growth (1989) (14)
- Photoluminescence from carbon and oxygen implanted Si (1977) (14)
- Improved quality GaN films grown by molecular beam epitaxy on sapphire (1998) (14)
- Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm (1998) (13)
- Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devices (1993) (13)
- Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodes (1977) (13)
- Photoluminescence of nitrogen‐implanted GaAs1−xPx (1974) (13)
- Photoluminescence study of heat‐treated InP (1987) (13)
- GaNAs avalanche photodiode operating at 0.94 μm (2000) (13)
- Luminescence properties of Be‐implanted GaAs1−xPx (x∼0.38) (1976) (13)
- Current oscillations in Zn-doped Si p-i-n diodes☆ (1970) (12)
- Comparative study of cross‐sectional scanning tunneling microscopy/spectroscopy on III–V hetero‐ and homostructures: Ultrahigh vacuum‐cleaved versus sulfide passivated (1994) (12)
- Encapsulation and annealing studies of semi-insulating InP (1987) (12)
- An Experimental Investigation of the Maximum Photo‐emf of a p‐n Junction (1967) (12)
- Annealing encapsulants for InP II: Photoluminescence studies (1982) (12)
- Current oscillations in deep-level doped semiconductors (1969) (12)
- CURRENT OSCILLATIONS IN Si p‐i‐n DEVICES AFTER IRRADIATION WITH ONE‐MeV ELECTRONS (1969) (11)
- Effects of multiband electron‐hole scattering and hole wave‐function symmetry on minority‐electron transport in GaAs (1989) (11)
- Recombination and Trapping in 60Co Gamma‐Irradiated n‐Type Germanium (1966) (11)
- High-speed, low-noise avalanche photodiodes (2000) (11)
- GROWTH OF GAN ON SAPPHIRE (0001) USING A SUPERSONIC JET OF PLASMA-GENERATED ATOMIC NITROGEN (1996) (11)
- Deep level transient spectroscopy for diodes with large leakage currents. (1979) (11)
- Excess noise in GaAs avalanche photodiodes with thin multiplication regions (1997) (10)
- A design of reflection scanning near-field optical microscope and its application to AlGaAs/GaAs heterostructures (1996) (10)
- Cracking of SiO2 layers on annealed InP (1981) (10)
- Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37) (1976) (10)
- Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification (1983) (10)
- Narrow linewidth, tunable distributed feedback photodetector (1996) (9)
- DOUBLE INJECTION IN Au‐DOPED Si p‐π‐n DIODES (1970) (9)
- Low threshold voltage continuous wave vertical‐cavity surface‐emitting lasers (1993) (9)
- Dynamic holography in a broad-area optically pumped vertical GaAs microcavity (2001) (9)
- Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlattices (1995) (9)
- Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy (1999) (9)
- A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs (1988) (9)
- Selective Etching of Al x Ga1 − x As and In ( Al x Ga1 − x ) As Alloys in Succinic Acid‐ Hydrogen Peroxide Solutions (1993) (8)
- A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy (1997) (8)
- Optical memory using a vertical-cavity surface emitting laser (1991) (8)
- Isothermal Annealing of the 0.97‐eV Luminescene in Electron‐Irradiated Si (1971) (8)
- Waveguide In Ga As-In Al As Avalanche Photodiode (2000) (8)
- High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths (1995) (8)
- Resonant cavity photodetector with integrated spectral notch filter (1998) (8)
- Double Injection in Semiconductors with Multivalent Trapping Centers (1970) (8)
- Electrical properties and photoluminescence studies of Ge-implanted GaAs (1981) (7)
- Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled silicon (1974) (7)
- Electrical Activation and Impurity Redistribution During Pulsed Laser Annealing of BF 2 + Implanted Amorphized Silicon (1981) (7)
- Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures (1988) (7)
- Characterization of the edge emission in Na doped ZnSe (1978) (7)
- Pulse Diffusion of Ge into GaAs (1986) (7)
- Theoretical and experimental study of swept line electron beam annealing of semiconductors (1983) (7)
- Factors Influencing the Photoluminescence Intensity of InP (1986) (7)
- Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes (1993) (7)
- Boron Impurity Profile Tailoring in Silicon by Ion Implantation and Measurement by Glow Discharge Optical Spectroscopy (1976) (7)
- In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy (1996) (7)
- GaAs/AlGaAs multiquantum well vertical cavity tunable photodetector (1994) (6)
- Optical and electrical characterization of pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped structures processed by rapid thermal annealing (1989) (6)
- Photoluminescence characterization of the effects of rapid thermal annealing on AlGaAs/GaAs modulation-doped quantum wells (1991) (6)
- Ion Implantation and RTA in III-V Materials (1988) (6)
- Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si’’ (1975) (6)
- Microwave frequency operation of quantum-well injection transit time (QWITT) diode (1988) (6)
- Identification of first and second layer aluminum atoms in dilute AlGaAs using cross‐sectional scanning tunneling microscopy (1996) (6)
- Power-optimized design of quantum well oscillators (1987) (6)
- Application of extended Hiickel theory to GaAs, GaP, GaAs:N, and GaP:N (1980) (6)
- Glow discharge optical spectroscopy measurements of arsenic‐implanted silicon (1977) (6)
- Baffle‐free refractory dimer arsenic source for molecular‐beam epitaxy (1988) (5)
- Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors (1998) (5)
- Four-wavelength Bragg mirror using GaAs/AlAs. (1995) (5)
- Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion‐implanted silicon (1982) (5)
- Boron contamination and precipitation during the growth of InP (1981) (5)
- Planar GaAs p-n junctions by Be ion implantation (1977) (5)
- The Schottky-gated hall-effect transistor and its application to carrier concentration and mobility profiling in GaAs MESFET's (1987) (5)
- Observation of low-T GaAs growth regimes by real-time ellipsometry (1993) (5)
- Random‐period superlattice quantum wells (1994) (5)
- Planar Be-implanted GaAs junction formation using swept-line electron beam annealing (1983) (5)
- A single-filament effusion cell with reduced thermal gradient for molecular-beam epitaxy (1989) (5)
- THEORETICAL AND EMPIRICAL DISTRIBUTIONS FOR ION IMPLANTATION PROFILES IN InP. (1982) (5)
- In situ ellipsometric study of As capping and low temperature molecular-beam epitaxy GaAs growth and implications for the low temperature critical thickness (1993) (5)
- Infrared detection properties of Zn-doped Si p-i-n diodes (1969) (4)
- Electrical properties of be-implanted GaA1-xPx (1976) (4)
- First-order phase transition in a laser threshold (1992) (4)
- Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy (1999) (4)
- Study of the DX center fine structure in ion‐implanted Al0.27Ga0.73As processed by rapid thermal annealing (1989) (4)
- High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths (1995) (4)
- Cross‐sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures (1994) (4)
- Ion Implantation in Compound Semiconductor Research (1981) (4)
- Complex Compensation of Ge Pulse‐Diffused into GaAs (1987) (4)
- Design for a low temperature ion implantation and luminescence cryostat (1976) (4)
- Solid solubility of Zn in Si (1969) (4)
- Redistribution and Electrical Properties of S Implanted in GaAs (1985) (4)
- High-speed quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 /spl mu/m (1999) (4)
- Detection by low temperature photoluminescence of oxygen recoils in “through-oxide” arsenic implanted silicon☆ (1976) (4)
- High-speed, low-noise resonant-cavity avalanche photodiodes (1996) (4)
- Reply to ''Comments on 'Luminescence from electron-irradiated silicon' '' (1974) (3)
- Impedance switching effects in GaAs/AlAs barrier structures (1987) (3)
- Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes (1995) (3)
- Influence of MBE growth and rapid thermal annealing conditions on the electrical properties of normal and inverted AlGaAs/InGaAs pseudomorphic HEMT structures (1988) (3)
- Molecular‐beam epitaxy growth of multiple‐wavelength mirrors and applications for a dual‐wavelength resonant‐cavity photodetector (1995) (3)
- Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment (2004) (3)
- Be implanted GaAs1-xPxlight emitting diodes (1975) (3)
- Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures (1989) (3)
- Reflection high‐energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular‐beam epitaxy (1988) (3)
- Measurements of abrupt transitions in III–V compounds and heterostructures (1992) (3)
- Impurity Distribution of Ion-Implanted Be in GaAs by Sims, Photoluminescence, and Electrical Profiling (1977) (3)
- Tunneling currents via Au levels in Ge Esaki diodes (1967) (3)
- Lateral diffusion contributions to contact mismatch in Kelvin resistor structures (1987) (2)
- Characterization of Undoped Pseudomorphic InGaAs/GaAs Quantum Wells by Electron Beam Electroreflectance (EBER) and Photoluminescence (PL) (1989) (2)
- Simulation of Anomalous Be Diffusion in Semi‐Insulating InP (1984) (2)
- Annealing studies of Be-implanted GaAs0.6P0.4 (1978) (2)
- Optimal summation of Gaussians for ion implantation profile control (1977) (2)
- Photoluminescence study of the effects of growth interruption on integer and fractional monolayer AlGaAs/GaAs quantum wells (1992) (2)
- Real‐time flux monitoring and feedback control of a valved arsenic source (1993) (2)
- Heating Of GaAs And InP By Incoherent Radiation (1986) (2)
- High-speed resonant-cavity SAM avalanche photodiodes (1997) (2)
- The coupled hole-phonon system and minority-electron transport in p-GaAs (1992) (2)
- The role of the split‐off band in electron‐hole energy exchange dynamics in selected III‐V semiconductors (1989) (2)
- avity Enhanced ( ) rate Absorption and Multip~i ) Avalanc e Photodetector ( (1995) (2)
- Correlation between the dampening of RHEED oscillations and the photoluminescence of quantum wells in the presence of AsO (1991) (2)
- Laser-based structure studies of silicon and gallium arsenide (1986) (2)
- Materials issues underlying compound semiconductor devices (1986) (2)
- MBE Regrowth Over a Selectively Undercut GaAs Masking Layer (1994) (1)
- Very narrow linewidth tunable distributed Bragg reflector photodetector (1996) (1)
- IIIB-1 a new interpretation of luminescence due to the N isoelectronic trap in GaAs1-xPx (1976) (1)
- Theoretical considerations regarding pulsed laser annealing of a-Ge layers on GaAs (1983) (1)
- Planar junctions in silicon on oxide grown using lateral epitaxy by seeded solidification (1985) (1)
- Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide (1983) (1)
- High-performance resonant-cavity photodetectors (1995) (1)
- MMIC Tuned Front-End for a Coherent Optical Receiver (1993) (1)
- Effects of As flux on Si δ‐doped GaAs (1993) (1)
- High speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes (1999) (1)
- Molecular beam epitaxy growth of resonant‐cavity separate‐absorption‐and‐multiplication avalanche photodiodes (1996) (1)
- Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy (2000) (1)
- HIGH SPEED RESONANT-CAVITY InGaAs/InAlAs AVALANCHE PHOTODIODES (2000) (1)
- Photoluminescence of AlAs/GaAs superlattice quantum wells (1993) (1)
- Analysis of Transit Time Effects due to Spacer Layers in Quantum Well Oscillators (1987) (1)
- Resonant-cavity photodetectors: performance and functionality (1997) (1)
- Ion Implantation and Annealing in III-V Multilayer Heterojunctions (1985) (1)
- Excimer Lasers; Second Edition (1985) (1)
- Photoluminescence studies of surface damage states in InP (1981) (1)
- Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes (1998) (1)
- Diffraction condition dependence of reflection high-energy electron diffraction (RHEED) dampening during molecular-beam epitaxy (MBE)growth (1994) (1)
- AlxGa1−xAs/GaAs photovoltaic cell with epitaxial isolation layer (1991) (1)
- Discharge Annealing of Ion Implanted Silicon (1981) (1)
- Enhancement of carrier concentration and spatial confinement in molecular‐beam epitaxial Si and Be δ‐doped GaAs by increasing As4/As2 flux ratio (1992) (1)
- Annealing of ion-implanted silicon-on-insulator films using a scanned graphite strip heater (1984) (1)
- Degradation of photoluminescence from quantum wells grown on top of low‐temperature buffers (1992) (1)
- Solid State Electronic Devices and Semiconductors and Electronic Devices (1982) (1)
- Dual Symmetric And Asymmetric Mirrors (1994) (0)
- SIMS Studies in Compound Semiconductors (1979) (0)
- Choice of the scattering carrier in Monte Carlo treatments of carrier-carrier scattering (1988) (0)
- High-speed quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 /spl mu/m (1999) (0)
- Speed and efficiency in multiple p-i-n photodetectors (1993) (0)
- Microcavity Emitters and Detectors (1996) (0)
- Type Conversion in Close Contact Rapid Thermal Annealing of Si-Implanted InP. (1987) (0)
- WP-A4 electrical properties of plasma-deposited Si-N films on GaAs (1979) (0)
- Implantation and Annealing Studies of Laterally Seeded Recrystallized Silicon on Silicon Dioxide (1984) (0)
- Electrical and Photoluminescence Properties of Be-Implanted GaAs and GaAs0.62P0.38 (1977) (0)
- Resonance-enhanced, low-voltage InGaAs avalanche photodiode (1991) (0)
- NISTR.4TIVE COMMITTEE (1987) (0)
- Selective Etching of AlxGa1-xAs and In(AlxGa1-x)As Alloys in Succinic Acid-Hydrogen Peroxide Solutions. (1993) (0)
- RESONANT EXCITATION OF BOUND EXCITON LUMINESCENCE IN GaAs1-x Px ALLOYS* (1980) (0)
- Ion Implantation Defects in Silicon and the Performance of Micron and Submicron Devices. (1983) (0)
- 18 – Semiconductors and Transistors (2002) (0)
- Molecular‐beam epitaxial growth condition dependence of reflection high‐energy electron diffraction dampening and quantum well photoluminescence (1993) (0)
- Bistability and Optical Switching in an Aias-Gaas-Ingaas Vertical-Cavity Surface-emitting Laser (1991) (0)
- ChipSat Mars Atmosphere Explorer (Chip-Sat-MAX) (2012) (0)
- A Proposed Quantum Well Injection Transit Time Device (QWITT) (1987) (0)
- Stimulated emission on N x (''Aline'') recombination transitions in nitrogenimplanted GaAs1x P x (x0.37) (2014) (0)
- Low Temperature Near-Field Scanning Optical Spectroscopy of Self-Assembled Quantum Dots (1998) (0)
- IVA-4 high field transport in GaAs-AlxGa1-xAs heterojunction layers (1981) (0)
- High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions (1997) (0)
- Selective etching of Al[sub x]Ga[sub 1[minus]x]As and In(Al[sub x]Ga[sub 1[minus]x])As alloys in succinic acid-hydrogen peroxide solutions (1993) (0)
- MBE growth of multilayer heterostructures with applications to optoelectronic and electronic devices (1994) (0)
- Introduction: Chip-Scale Satellites (ChipSats) present a novel, differentiating technology that can revolutionize light-weight in situ atmospheric surveys. Exploiting the physics of the ChipSats’ small physical scales and large area-to-mass ratios enables high- density in-situ measurements of the Ma (2012) (0)
- Session 9 Device technology — Laser and RF annealing, and oxides (1979) (0)
- Quantitative RHEED studies of MBE growth of III-V compounds (1991) (0)
- Drift and diffusion in low‐dimensional p‐n junctions (1994) (0)
- Resonant-cavity photodetectors for optical communications (1995) (0)
- Threshold Dependence on Cavity Length and Mirror Reflectivity in Fabry-Perot Microcavity Semiconductor Lasers with High Contrast Mirrors (1993) (0)
- A study of irradiation-induced defects in silicon using low temperature photoluminescence (1971) (0)
- Design and fabrication of a three terminal quantum storage device (1995) (0)
- Semiconductor microcavity effect on spontaneous emission (2008) (0)
- Low dark current photosensors based on GaAs0.6P0.4 (1976) (0)
- Cascadability of optically latching vertical-cavity surface-emitting laser (1992) (0)
- Alloy clustering and interface roughness in InGaAs/GaAs heterostructures (1997) (0)
- Influence of transit time effects on the optimum design and maximum oscillation frequency of quantum well oscillators (1987) (0)
- VB-11 InP annealing studies (1982) (0)
- Control of Unidirectional Oscillation in Semiconductor Orbiter Lasers (1991) (0)
- C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Regrown by Swept-Line Electron Beam (SLEB) Annealing, (1980) (0)
- Electron-Hole Scattering And Minority-Electron Transport in In0.53Ga 0.47As, InAs, and InP: The Role Of The Split-Off Band (1989) (0)
- MBE Growth for Electronic and Photonic Device Applications. (1995) (0)
- Holographic vertical-cavity surface-emitting laser (1999) (0)
- STUDY OF ENCAPSULANTS FOR ANNEALING GALLIUM ARSENIDE (1978) (0)
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What Schools Are Affiliated With Ben G. Streetman?
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