B. Jayant Baliga
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American electrical engineer from India
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B. Jayant Baligaengineering Degrees
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Electrical Engineering
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Applied Physics
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Engineering
B. Jayant Baliga's Degrees
- PhD Electrical Engineering Rensselaer Polytechnic Institute
- Masters Electrical Engineering Rensselaer Polytechnic Institute
- Bachelors Electrical Engineering IIT Madras
Why Is B. Jayant Baliga Influential?
(Suggest an Edit or Addition)According to Wikipedia, Bantval Jayant Baliga is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor . In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology.
B. Jayant Baliga's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Fundamentals of Power Semiconductor Devices (2008) (1589)
- Comparison of 6H-SiC, 3C-SiC, and Si for power devices (1993) (1017)
- Power semiconductor device figure of merit for high-frequency applications (1989) (701)
- Modern Power Devices (1987) (646)
- Optimum semiconductors for high-power electronics (1989) (561)
- Trends in power semiconductor devices (1996) (478)
- Gallium nitride devices for power electronic applications (2013) (429)
- Semiconductors for high‐voltage, vertical channel field‐effect transistors (1982) (358)
- Silicon Carbide Power Devices (2005) (247)
- Smart grid technologies (2009) (239)
- The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device (1984) (220)
- The insulated gate rectifier (IGR): A new power switching device (1982) (201)
- Silicon-carbide high-voltage (400 V) Schottky barrier diodes (1992) (161)
- An overview of smart power technology (1991) (153)
- The future of power semiconductor device technology (2001) (146)
- Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers (1977) (139)
- Advanced Power MOSFET Concepts (2010) (137)
- Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC (1999) (135)
- Planar Nearly Ideal Edge-Termination Technique for GaN Devices (2011) (117)
- Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts (1996) (117)
- Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection (2013) (109)
- The evolution of power device technology (1984) (108)
- High voltage 4H-SiC Schottky barrier diodes (1995) (108)
- The pinch rectifier: A low-forward-drop high-speed power diode (1984) (106)
- A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension (2011) (106)
- Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier (1987) (100)
- The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure (1997) (92)
- Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors (1979) (87)
- A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage (1994) (85)
- Fundamentals of Power Semiconductor Devices 1 3 (2013) (84)
- Power semiconductor devices for variable-frequency drives (1994) (82)
- Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions (1976) (78)
- Evolution of MOS-bipolar power semiconductor technology (1988) (77)
- FREEDM System: Role of power electronics and power semiconductors in developing an energy internet (2009) (74)
- Effect of antimony ion implantation on Al‐silicon Schottky diode characteristics (1984) (71)
- Modification of Schottky barriers in silicon by reactive ion etching with NF3 (1983) (69)
- SiC device edge termination using finite area argon implantation (1997) (69)
- Gallium Nitride and Silicon Carbide Power Devices (2016) (69)
- Trench MOS Barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage (1995) (67)
- The MOS-gated emitter switched thyristor (1990) (67)
- Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme (2016) (66)
- Device Figure of Merit for High-Frequency Applications (1989) (62)
- Characteristics of the emitter-switched thyristor (1991) (62)
- Advanced High Voltage Power Device Concepts (2011) (62)
- A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance (1991) (61)
- 500-V n-channel insulated-gate bipolar transistor with a trench gate structure (1989) (61)
- The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices (1977) (59)
- Advanced Power Rectifier Concepts (2009) (57)
- The Preparation and Properties of Tin Oxide Films Formed by Oxidation of Tetramethyltin (1976) (57)
- Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures (1991) (56)
- Measurement of electron and hole impact ionization coefficients for SiC (1997) (54)
- Measurements of the p-n product in heavily doped epitaxial emitters (1984) (54)
- Temperature behavior of insulated gate transistor characteristics (1985) (53)
- A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension (2016) (52)
- Suppressing latchup in insulated gate transistors (1984) (52)
- Measurement of heavy doping parameters in silicon by electron-beam-induced current (1980) (51)
- Switching speed enhancement in insulated gate transistors by electron irradiation (1984) (51)
- Growth of silica and phosphosilicate films (1973) (50)
- The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor (2015) (50)
- Analysis of insulated gate transistor turn-off characteristics (1985) (50)
- n-channel lateral insulated gate transistors: Part I—Steady-state characteristics (1986) (47)
- Fast-switching insulated gate transistors (1983) (46)
- Electrical properties of thermal oxide grown on n‐type 6H‐silicon carbide (1994) (45)
- Cryogenic Operation of Silicon Power Devices (1998) (45)
- Improving the reverse recovery of power mosfet integral diodes by electron irradiation (1983) (45)
- Epitaxial silicon technology (1986) (41)
- "Insulated gate bipolar transistor (IGBT) with a trench gate structure " (1987) (40)
- Growth and Properties of Heteroepitaxial GaInAs Alloys on GaAs Substrates Using Trimethylgallium, Triethylindium, and Arsine (1975) (40)
- On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) (2017) (39)
- Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA) (2014) (38)
- High-voltage current saturation in emitter switched thyristors (1991) (38)
- Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation (2017) (38)
- Silicon RF power MOSFETS (2005) (38)
- Edge terminations for SiC high voltage Schottky rectifiers (1993) (38)
- Electrical properties of thermal oxide grown using dry oxidation on p‐type 6H‐silicon carbide (1994) (37)
- Power ICs in the saddle (1995) (36)
- Vertical channel field-controlled thyristors with high gain and fast switching speeds (1978) (35)
- Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices (2016) (35)
- Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2 (1987) (35)
- "The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode" (1987) (35)
- Switching lots of watts at high speeds (1981) (34)
- Modeling the [dV/dt] of the IGBT during inductive turn off (1999) (34)
- High-voltage device termination techniques a comparative review (1982) (33)
- The MOS depletion-mode thyristor: a new MOS-controlled bipolar power device (1988) (33)
- Power MOSFETs (2018) (32)
- Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics (1990) (32)
- Power integrated circuits—A brief overview (1986) (32)
- A Comparative Study 4500-V Edge Termination Techniques for SiC Devices (2017) (31)
- Analytical Modeling of IGBTs: Challenges and Solutions (2013) (30)
- Low‐temperature sintered AuGe/GaAs ohmic contact (1982) (30)
- Controlling the characteristics of the MPS rectifier by variation of area of Schottky region (1993) (30)
- High Voltage Silicon Carbide Devices (1998) (30)
- Lateral diffusion of zinc and tin in gallium arsenide (1974) (30)
- The accumulation-mode field-effect transistor: a new ultralow on-resistance MOSFET (1992) (29)
- Planar edge termination for 4H-silicon carbide devices (1996) (29)
- P-type 4H and 6H-SiC high-voltage Schottky barrier diodes (1998) (29)
- Analysis and optimization of power MOSFETs for cryogenic operation (1993) (29)
- A 50-V, 0.7-m Omega *cm/sup 2/, vertical-power DMOSFET (1989) (28)
- Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers (2011) (28)
- Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices (2015) (28)
- Power semiconductors: Switching lots of watts at high speeds: State-of-the-art development yields solid-state devices capable of handling over 10 million watts (1981) (28)
- Role of defects in producing negative temperature dependence of breakdown voltage in SiC (1998) (27)
- Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors (1991) (27)
- Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristics (1985) (27)
- PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices (2018) (27)
- Bipolar operation of power junction field effect transistors (1980) (26)
- An experimental evaluation of the on-state performance of trench IGBT designs (1998) (26)
- Silicon Power Field Controlled Devices and Integrated Circuits (1981) (26)
- 25 amp, 500 volt insulated gate transistors (1983) (26)
- Closed-form analytical solutions for the breakdown voltage of planar junctions terminated with a single floating field ring (1990) (26)
- Low temperature aluminum oxide deposition using trimethylaluminum (1983) (25)
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine I. Growth Characterization (1974) (25)
- Design and investigation of frequency capability of 15kV 4H-SiC IGBT (2009) (24)
- Silicon Liquid Phase Epitaxy A Review (1986) (24)
- Gallium arsenide Schottky power rectifiers (1985) (24)
- A novel method for etching trenches in silicon carbide (1995) (24)
- Planar, ion implanted, high voltage 6H-SiC P-N junction diodes (1995) (24)
- Lateral insulated gate transistors with improved latching characteristics (1986) (24)
- Optimization of recombination levels and their capture cross section in power rectifiers and thyristors (1977) (24)
- Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power process (1990) (23)
- Vapor‐Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride Gas (1975) (23)
- On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs] (1996) (22)
- The asymmetrical field-controlled thyristor (1980) (22)
- A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results (2018) (22)
- Antimony‐Doped Tin Oxide Films Deposited by the Oxidation of Tetramethyltin and Trimethylantimony (1982) (22)
- Hillocks on epitaxial GaAs grown from trimethylgallium and arsine (1974) (21)
- Theoretical and experimental characteristics of the base resistance controlled thyristor (BRT) (1992) (20)
- A power junction gate field-effect transistor structure with high blocking gain (1980) (20)
- Forward biased safe operating area of emitter switched thyristors (1995) (20)
- Morphology of silicon epitaxial layers grown by undercooling of a saturated tin melt (1977) (20)
- The dV/dt capability of MOS-gated thyristors (1998) (20)
- Comparison of neutron and electron irradiation for controlling IGT switching speed (1985) (19)
- The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier (1999) (19)
- Material Properties and Transport Physics (2018) (19)
- Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs (2018) (19)
- A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel (2017) (18)
- Preparation and Properties of Zinc Oxide Films Grown by the Oxidation of Diethylzinc (1981) (18)
- Measurement of carrier lifetime profiles in diffused layers of semiconductors (1978) (18)
- New cell designs for improved IGBT safe-operating-area (1988) (17)
- Impact of VLSI Technology on Power Devices (1990) (17)
- The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors (1988) (17)
- High-voltage junction-gate field-effect transistor with recessed gates (1982) (17)
- The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit (2019) (17)
- Revolutionary innovations in power discrete devices (1986) (17)
- The dual gate emitter switched thyristor (DG-EST) (1996) (17)
- Low resistivity as-deposited ohmic contacts to 3C-SiC (1995) (16)
- Kinetics of the Epitaxial Growth of Silicon from a Tin Melt (1977) (16)
- Comparison of n and p channel IGTs (1984) (16)
- 10kV SiC MPS diodes for high temperature applications (2016) (16)
- Formation and properties of rapid thermally annealed TiSi2 on lightly doped and heavily implanted silicon (1988) (16)
- Lifetime control by palladium diffusion in silicon (1978) (16)
- Critical nature of oxide/interface quality for SiC power devices (1995) (15)
- The dual gate base resistance controlled thyristor (1995) (15)
- Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices (2012) (15)
- Power transistors : device design and applications (1984) (15)
- A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop (2010) (15)
- New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs (2018) (15)
- Latching in lateral insulated gate bipolar transistors (1987) (15)
- Lateral insulated gate transistors with improved latching characteristics (1986) (15)
- Mobility study on RIE etched silicon surfaces using SF/sub 6//O/sub 2/ gas etchants (1993) (15)
- Breakdown characteristics of gallium arsenide (1981) (15)
- Trapezoidal-groove Schottky-gate vertical-channel GaAs FET (GaAs static induction transistor) (1985) (15)
- Grid depth dependence of the characteristics of vertical channel field controlled thyristors (1979) (15)
- Optimized silicon low-voltage power MOSFET's for high-frequency power conversion (1989) (15)
- Blanket LVD tungsten silicide technology for smart power applications (1989) (15)
- Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs (2019) (15)
- High-performance vertical-power DMOSFETs with selectively silicided gate and source regions (1989) (14)
- Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide (2018) (14)
- Power semiconductor devices for the 1990s (1993) (14)
- Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM) (2017) (14)
- Dopant Distribution in Silicon Liquid Phase Epitaxial Layers: Meltback Effects (1979) (14)
- Open tube diffusion of zinc in gallium arsenide (1980) (13)
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine II . Electrical Properties (1974) (13)
- Reactive ion etching of trenches in 6H-SiC (1996) (13)
- SiC power devices: From conception to social impact (2016) (13)
- Correlation of Lifetime with Recombination Centers in Electron‐Irradiated P‐Type Silicon (1983) (13)
- Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs (2019) (13)
- Defect Control during Silicon Epitaxial Growth Using Dichlorosilane (1982) (13)
- Lateral junction-isolated emitter switched thyristor (1992) (13)
- Modeling the on-state characteristics of the emitter switched thyristor (1994) (13)
- Planar Diffusion in Gallium Arsenide from Tin‐Doped Oxides (1979) (12)
- Low contact resistivity ohmic contacts to 6H-silicon carbide (1993) (12)
- Electrochemical Patterning of Tin Oxide Films (1977) (12)
- Enhanced protection of GaAs against thermal surface degradation by encapsulated annealing in an arsine ambient (1984) (12)
- Electron irradiation of field-controlled thyristors (1982) (12)
- High voltage (450 V) 6H-SiC lateral MESFET structure (1996) (12)
- Applications and characterization of four quadrant GaN switch (2017) (12)
- Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results (2019) (12)
- Lifetime control in power rectifiers and thyristors using gold, platinum and electron irradiation (1976) (12)
- Composition dependence of energy gap in GaInAs alloys (1975) (11)
- Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results (2019) (11)
- Cryogenic operation of PiN power rectifiers (1994) (11)
- Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors (1985) (11)
- Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization by Ion Implantation (1997) (11)
- High Lifetime Silicon Liquid Phase Epitaxy (1982) (11)
- Optimum semiconductors for power field effect transistors (1981) (11)
- Impact of SiC on Power Devices (1992) (10)
- Breakdown Voltage (2018) (10)
- High gain power switching using field controlled thyristors (1982) (10)
- Modelling the turn-off characteristics of the base resistance controlled thyristor (BRT) (1995) (10)
- P-channel, vertical insulated gate bipolar transistors with collector short (1987) (10)
- “GAMBIT: GAte Modulated BIpolar Transistor” (1975) (10)
- Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide (1995) (10)
- Trench-gate base-resistance-controlled thyristors (UMOS-BRTs) (1992) (10)
- A simple method for predicting the forward blocking gain of gridded field effect devices with rectangular grids (1980) (10)
- The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor (2015) (10)
- Isothermal Silicon Liquid Phase Epitaxy from Supersaturated Tin (1978) (10)
- SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension (2013) (9)
- Silicon planar ACCUFET: improved power MOSFET structure (2000) (9)
- VIB-4 the effect of channel length and gate oxide thickness on the performance of insulated gate transistors (1985) (9)
- Breakdown stability of gold, aluminum, and tungsten Schottky barriers on gallium arsenide (1982) (9)
- Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications (2015) (9)
- Modification of Schottky Barriers in Silicon by Reactive Ion Etching in NF 3 Gas Mixtures (1984) (9)
- The planar junction etch for high voltage and low surface fields in planar devices (1977) (9)
- Measurement of energy band gap using an electrolyte‐semiconductor junction: Water–gallium indium arsenide alloys (1975) (9)
- 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (2019) (9)
- Counterdoping of MOS channel (CDC)-a new technique of improving suppression of latching in insulated gate bipolar transistors (1988) (9)
- Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient (1986) (9)
- 150 Volt vertical channel GaAs FET (1982) (9)
- PSG masks for diffusions in gallium arsenide (1972) (9)
- SIMS analysis of low temperature ohmic contacts to GaAs (1981) (9)
- Influence of the trench corner design on edge termination of UMOS power devices (1997) (9)
- Recombination level selection criteria for lifetime reduction in integrated circuits (1978) (9)
- Tunneling coefficient for GaN Schottky barrier diodes (2011) (8)
- Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes (2020) (8)
- Gate turn-off capability of depletion-mode thyristors (1989) (8)
- Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization (2018) (8)
- Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200 V 4H-SiC Inversion-channel MOSFETs (2019) (7)
- Buried-grid field-controlled thyristors fabricated using silicon liquid-phase epitaxy (1980) (7)
- Temperature dependence of field-controlled thyristor characteristics (1981) (7)
- Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes (1997) (7)
- Analysis of gate dielectrics for SiC power UMOSFETS (1997) (7)
- RBSOA study of high voltage SiC bipolar devices (2009) (7)
- Optimized Highly Efficient SSCB Using Organic Substrate Packaging for Electric Vehicle Applications (2020) (7)
- Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures (2018) (7)
- A silicon carbide LOCOS process using enhanced thermal oxidation by argon implantation (1997) (7)
- Enhancing Short Circuit Capability of 1.2 kV SiC Power MOSFETs using a Gate-Source Shorted Si Depletion-Mode MOSFET in Series with the Source (2019) (7)
- Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs (2016) (7)
- High-current, low-forward-drop JBS power rectifiers (1986) (7)
- A new hybrid VDMOS-LIGBT transistor (1988) (7)
- On the reverse blocking characteristics of Schottky power diodes (1992) (7)
- Ultra low specific on-resistance UMOS FET (1986) (7)
- Liquid Phase Epitaxial Silicon Diodes: N‐Epitaxial Layers on Boron‐Doped Substrates (1980) (7)
- Analysis and optimization of the planar 6H-SiC ACCUFET (1999) (7)
- The effect of MOS Channel length on the performance of insulated gate transistors (1985) (6)
- Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT (1998) (6)
- Comparison of Ti and Pt silicon carbide Schottky rectifiers (1992) (6)
- Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices (2021) (6)
- Analysis of the output conductance of insulated gate transistors (1986) (6)
- High temperature characteristics of bipolar mode power JFET operation (1983) (6)
- Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices (1998) (6)
- The accumulation channel driven bipolar transistor (ACBT) (1997) (6)
- IVA-8 power MOSFET integral diode reverse recovery tailoring using electron irradiation (1982) (6)
- High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes (1997) (6)
- Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter (2020) (6)
- Selectively silicided vertical power DMOSFETs for high-frequency power conversion (1989) (6)
- Evolution and status of smart power technology (1992) (6)
- Extended trench-gate power UMOSFET structure with ultralow specific on-resistance (1992) (5)
- Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current (2018) (5)
- Material Properties and Technology (2006) (5)
- Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications (2021) (5)
- Boron Autodoping during Silicon Liquid Phase Epitaxy (1981) (5)
- An Experimental Study of Short Circuit Behavior and Protection of 15 kV SiC IGBTs (2019) (5)
- High voltage, high speed, GaAs Schottky power rectifier (1983) (5)
- Trends in Power Semiconductor Devices-Electron Devices, IEEE Transactions on (2004) (5)
- Dielectrically isolated lateral emitter switched thyristor (1992) (5)
- Technological constraints upon the properties of deep levels used for lifetime control in the fabrication of power rectifiers and thyristors (1977) (5)
- IIB-4 impact of cell breakdown upon power DMOSFET on-resistance (1987) (5)
- A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs (2012) (5)
- Zero voltage switching characterization of 12 kV SiC N-IGBTs (2014) (5)
- 1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results (2018) (5)
- The minority carrier injection controlled field-effect transistor (MICFET): a new MOS-gated power transistor structure (1992) (5)
- The SIMEST: an EST structure without parasitic thyristor achieved using SIMOX technology (1995) (5)
- Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology (1988) (4)
- Modelling and analysis of current sensors for N-channel, vertical IGBTs (1992) (4)
- Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry (2020) (4)
- Deep Planar Gallium and Aluminum Diffusion in Silicon (1979) (4)
- MOS Devices for Power Electronic Applications (1998) (4)
- Extended measurements of gallium arsenide breakdown characteristics using punchthrough structures (1984) (4)
- Proton implantation in lateral IGBTs (1992) (4)
- 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge (2020) (4)
- Improvement of power rectifier and thyristor characteristics by lifetime control (1977) (4)
- Comparison of Current Suppression Methods to enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-Connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Use of a Series Resistance (2019) (4)
- IGBT Applications: Transportation (2015) (4)
- IVB-4 performance of p-channel lateral insulated gate transistors (1986) (4)
- Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate (2020) (4)
- Improved BRT structures fabricated using SIMOX technology (1996) (4)
- Degradation of TiSi 2 /n + -Polysilicon Interfaces Due to High Temperature Processing (1987) (4)
- Thin Film Properties of Sputtered Niobium Silicide on SiO2, Si3 N 4, and N+ Poly‐Si (1986) (4)
- Gen-3 PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-inch Commercial Foundry (2020) (4)
- An emitter switched thyristor with base resistance control (1993) (4)
- Selectively silicided vertical power double‐diffused metal–oxide semiconductor field effect transistors for high‐frequency power switching applications (1988) (4)
- 3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE™ Technology in a 4-inch Wafer Commercial Foundry (2021) (4)
- A new trench gate accumulation mode field effect emitter switched thyristor (1995) (4)
- A self-aligned short process for insulated-gate bipolar transistors (1992) (4)
- Improved DC-EST structure with diode diverter (1998) (4)
- Social impact of power semiconductor devices (Invited Paper) (2014) (4)
- Breakover phenomena in field-controlled thyristors (1982) (4)
- Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress (2019) (4)
- A novel buried grid device fabrication technology (1980) (4)
- Silicon Carbide IGBT (2011) (4)
- Hot Carrier Injection Instability (2005) (3)
- Electrical and optical properties of tin oxide-gallium arsenide heterojunctions (1976) (3)
- Measurements of band gap narrowing in heavily doped epitaxial emitters and the modeling of heavily doped silicon (1980) (3)
- Analysis of on-state carrier distribution in the DI-LIGBT (1997) (3)
- Lifetime profile measurements in heavily doped emitter structures using electron beams (1978) (3)
- Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC MOSFETs with Various Channel Lengths (2019) (3)
- Shielded Schottky Rectifiers (2006) (3)
- Refilling Silicon Grooves by Liquid Phase Epitaxy (1982) (3)
- Cryogenic operation of power junction field effect transistors (1996) (3)
- A high gain structure for power junction gate field effect transistors (1978) (3)
- Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation (2019) (3)
- Buried‐grid fabrication by silicon liquid‐phase epitaxy (1979) (3)
- Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height (2018) (3)
- WP-B7 power-field-controlled thyristors fabricated using silicon liquid-phase epitaxy (1979) (3)
- Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive Voltage (2020) (3)
- The dV / dt capability of field-controlled thyristors (1982) (3)
- Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies (2020) (3)
- 1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop (2019) (3)
- Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET (2018) (3)
- Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes (2021) (3)
- A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs (2021) (3)
- Reverse blocking lateral MOS-gated switches for AC power control applications (1998) (3)
- Numerical and experimental analysis of 500-V power DMOSFET with an atomic-lattice layout (1989) (3)
- Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module (2021) (3)
- 3 – SILICON LIQUID-PHASE EPITAXY (1986) (3)
- Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs) (2016) (3)
- Defect Levels Controlling the Behavior of NTD Silicon During Annealing (1979) (3)
- Trench Schottky Barrier Controlled Schottky Rectifiers (2009) (3)
- Dielectrically isolated lateral high voltage P-i-N rectifiers for power ICs (1992) (3)
- Reverse biased safe operating area of emitter switched thyristors (1996) (3)
- RF Power Amplifiers (2005) (3)
- Barrier-controlled current conduction in field-controlled thyristors (1981) (3)
- The Effect of Doping on the Grain Structure of As-Deposited and High-Temperature Annealed Lpcvd Wsl 2 Films on Polysilicon (1988) (2)
- Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design (2018) (2)
- Conductivity of complementary error function n-type diffused layers in gallium arsenide (1977) (2)
- Vertical-Diffused MOSFETs (2005) (2)
- Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement (2021) (2)
- Measurements of heavy doping parameters in processed silicon devices (1979) (2)
- Trapezoidal-groove Schottky-gate vertical channel GaAs FET (GaAs static induction transistor) (1984) (2)
- IGBT Applications: Lighting (2015) (2)
- Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results (2018) (2)
- 3.5 kV trench dual-gate MOS controlled thyristor (1996) (2)
- Lateral diffusion in GaAs (1973) (2)
- Beryllium Ion‐Implanted Junctions in GaAs with Submicron Lateral Diffusion (1985) (2)
- Recessed gate junction field effect transistors (1980) (2)
- IGBT Structure and Operation (2015) (2)
- High temperature performance of field controlled thyristors (1980) (2)
- Optimization of linear cell 4H-SiC power JBSFETs: Impact of N+ source contact resistance (2022) (2)
- Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs (2019) (2)
- Package and Module Design (2015) (2)
- Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures (2018) (2)
- Comparison of high speed DI-LIGBT structures (1997) (2)
- IGBT Applications: Power Transmission (2015) (2)
- Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts (2022) (2)
- D-MOSFET Structure (2010) (2)
- The MAJIC-FET: A high speed power switch with low on-resistance (1982) (2)
- Current saturation mechanism and FBSOA of the SIMEST (1997) (2)
- Influence of low lifetime regions on recombination in high lifetime regions of semiconductors (1976) (2)
- Temperature dependence of the emitter switched thyristor characteristics (1996) (2)
- Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts (1990) (2)
- IIB-2 the effect of SIPOS on the performance of lateral insulated gate bipolar transistors (1987) (2)
- Floating base thyristor (1995) (2)
- Junction Barrier Controlled Schottky Rectifiers (2009) (2)
- Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique (1997) (2)
- IGBT Applications: Industrial (2015) (2)
- Chip Design, Protection, and Fabrication (2015) (2)
- Cryogenic operation of asymmetric field controlled thyristors (1995) (2)
- Effect of oxidation on the breakdown characteristics of aluminum diffused junctions (1977) (2)
- Safe Operating Area Design (2015) (2)
- A self-aligned short process for insulated gate transistors (1985) (2)
- 1.2 kV SiC Trench-Gate MOSFETs with Dual Shielding Regions (2019) (2)
- 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle (2020) (2)
- Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology (2021) (2)
- Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs (2020) (2)
- An improved GAMBIT device structure (1978) (2)
- Planar Power MOSFETs (2006) (2)
- Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs (2019) (2)
- Silicon Liquid Phase Epitaxy (1986) (2)
- Device physics and modeling of integrated power devices (1987) (1)
- Process-Induced Defects in High-Purity GaAs (1982) (1)
- SiC Planar Power MOSFETs (2017) (1)
- Shielded Trench-Gate Power MOSFETs (2006) (1)
- The Baliga-Pair (Cascode) Configuration (2017) (1)
- Lifetime profile measurements in diffused layers (1977) (1)
- Gate Drive Circuit Design (2015) (1)
- During Inductive Turn Off (1999) (1)
- Influence of the collector resistance on the performance of accumulation channel driven bipolar transistor (1998) (1)
- Power junction gate field controlled devices (1979) (1)
- Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies (2020) (1)
- HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE PART 1, GROWTH CHARACTERIZATION PART 2, ELECTRICAL PROPERTIES (1975) (1)
- Chapter 8 – IGBT Models (2015) (1)
- Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs : ISPSD '93, May 18-20, 1993, Monterey, California, USA (1993) (1)
- Analysis and suppression of latch-up during IGBT mode of DG-BRT operation (1998) (1)
- IGBT Applications: Consumer (2015) (1)
- Current saturation control in silicon emitter switched thyristors (2000) (1)
- "THE MOS-GATED EMITTER SWITCHED THYRISTOR" (INVITED PAPER) (1990) (1)
- On the Adhesion of LPCVD WSi 2 to Doped and Undoped Polysilicon (1988) (1)
- GD-MOSFET Structure (2010) (1)
- Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source (2020) (1)
- Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness (2021) (1)
- IGBT Structural Design (2015) (1)
- Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications (2022) (1)
- Trench-Gate Power MOSFETs (2006) (1)
- 2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies (2020) (1)
- The minority-carrier injection-controlled field-effect transistor (MICFET) (1991) (1)
- Thin film properties of sputtered niobium silicide on SiO/sub 2/, Si/sub 3/N/sub 4/, and N/sup +/ poly-Si (1986) (1)
- Neutron Transmutation Doped Silicon for Power Semiconductor Devices (1984) (1)
- Characterization of Highly Thermally Conductive Organic Substrates for a Double-Sided Cooled Power Module (2020) (1)
- SJ-MOSFET Structure (2010) (1)
- CC-MOSFET Structure (2010) (1)
- IGBT Applications: Medical (2015) (1)
- Electrical Characteristics of Tisi 2 /n + -Polysilicon/Sio 2 /Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions (1987) (1)
- Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications (2021) (1)
- Silicon IGBT (Insulated Gate Bipolar Transistor) (2011) (1)
- IGBT Applications: Other (2015) (1)
- Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET (2019) (1)
- A high gain vertical channel controlled thyristor (1977) (1)
- High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs (2021) (1)
- Trench MOS Barrier Controlled Schottky Rectifiers (2009) (1)
- 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types (2021) (1)
- 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data (2021) (1)
- New Material and Device Design Considerations for High-Power Electronics (1989) (1)
- Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs (2016) (1)
- Dual-channel EST/BRT: a new high-voltage MOS-gated thyristor structure (1995) (1)
- Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application (2021) (1)
- Enhancing Short Circuit Ruggedness of 1.7 kV IGBTs using a Gate-Source-Shorted Depletion-Mode MOSFET in Series with the Emitter (2020) (1)
- Output characteristics of the Dual Channel EST (1997) (1)
- Chapter 1 Power Semiconductor Devices for Variable Frequency Drives (2005) (0)
- Semiconductor element, in particular with MOS gate turn-off thyristor (1988) (0)
- A novel photoconductivity lifetime measurement technique (1977) (0)
- Power integrated circuits (2014) (0)
- Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor (1999) (0)
- Anomalous diffusion from doped oxides due to dopant depletion effects (1977) (0)
- Search for the Ideal Power Semiconductor Device (1991) (0)
- New Materials Beyond Silicon for Power Devices (1992) (0)
- A method of manufacturing field-controlled elements in vertical channels sunk grids, including field effect transistors and field-controlled thyristors (1982) (0)
- SiC Discrete Power Devices (1997) (0)
- Improved materials for high frequency field effect transistors (1974) (0)
- “Integrable High Voltage Devices for Power ICs” (Invited Paper) (1989) (0)
- SC-MOSFET Structure (2010) (0)
- Design and Characterization of High Voltage N-Channel SINFET’s and HSINFET’s (1989) (0)
- GaN Lateral Power HFETs (2017) (0)
- Transistor with insulated gate and an integral vertical diode and method for its manufacture (1987) (0)
- Low noise high frequency synchronous rectifying circuit (1989) (0)
- Bipolar Junction Transistors (2018) (0)
- With mos gate turn-off thyristor (1988) (0)
- Dual Trench MOSFETs (2005) (0)
- The Baliga-Pair Configuration (2006) (0)
- Power Junction Field Effect Transistors (1998) (0)
- Lateral-Diffused MOSFETs (2005) (0)
- ISPSD '91 : proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22-24 (1991) (0)
- U-MOSFET Structure (2010) (0)
- Metal-Semiconductor Field Effect Transistors (2006) (0)
- SIMFCT: a MOS-gated FCT with high voltage-current saturation (1997) (0)
- CRMGT: a MOS-gated power switch (1996) (0)
- Numerical and experimental comparison of vertical DMOSFET and UMOSFET (1988) (0)
- VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS (1976) (0)
- A semiconductor device having an insulated gate. (1986) (0)
- Session 10 Solid state devices — High voltage devices and power FETs (1982) (0)
- Gate-controlled monolithically integrated semiconductor element with bi-directional conductivity and method for its operation (1988) (0)
- Insulated gate bipolar transistor (2022) (0)
- A method of manufacturing a semiconductor device with a base region having a deep portion. (1983) (0)
- Charge Coupled Structures (2006) (0)
- Erratum: Buried‐grid fabrication by silicon liquid‐phase epitaxy (1979) (0)
- Monolithically integrated semiconductor element with conductivity in the reverse direction and moved to its manufacturing (1988) (0)
- SiC Gate Turn-Off Thyristors (2017) (0)
- LIQUID PHASE EPITAXIAL SILICON DIODES: N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES (1980) (0)
- Lateral High Voltage FETs (2006) (0)
- Potential and Field Distributions in LDD Structures in the Subthreshold Region (1992) (0)
- SiC Bipolar Junction Transistors (2017) (0)
- SiC Trench-Gate Power MOSFETs (2017) (0)
- Neutron radiation tolerance of field-controlled thyristors (1983) (0)
- Temperature Dependence of Silicon Properties (1998) (0)
- User-Programmable Short-Circuit Capability Enhancement for 1.2 kV Si IGBTs using a 40 V Si Enhancement-Mode MOSFET connected in Series with the Emitter (2020) (0)
- A hybrid VIGBT-LDMOS transistor (1988) (0)
- Eliminating Repetitive Short Circuit Degradation and Failure of 1.2 kV SiC Power MOSFETs (2020) (0)
- Charge-Coupled MOSFETs (2005) (0)
- SiC Planar MOSFET Structures (2010) (0)
- urface Inhomogeneities on the aracteristics of Sic Schottky Contacts (1996) (0)
- Effect of Ion Bombardment on the Dopant Diffusion During Reactive Ion Etching (RIE) of Dielectric Films Deposited on Silicon (1988) (0)
- Ideal Specific On-Resistance (2017) (0)
- A method of planar-epitaxial make up under fluessigphasen epitaxy (1980) (0)
- Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs (2021) (0)
- Silicon Carbide Power Electronic Devices (2000) (0)
- Super-Linear MOSFETs (2005) (0)
- High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination (1999) (0)
- 1. Power Semiconductor Devices for Variable Frequency Drives (2013) (0)
- Chapter 20 – Synopsis (2015) (0)
- Improved smart power discrete devices fabricated using SIMOX technology (1996) (0)
- Achieving Reduced Specific On-Resistance in 1.2 kV SiC Power MOSFETs at Elevated Temperature (2019) (0)
- IGBT Applications: Renewable Energy (2015) (0)
- A method of manufacturing a self-aligned semiconductor elements (1987) (0)
- Device monolithic semiconductor integrated a bidirectional conduction and method of manufacture (1988) (0)
- Field effect semiconductor device and switching (1989) (0)
- IGBT Applications: Defense (2015) (0)
- Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs (2021) (0)
- GaN Vertical Power HFETs (2017) (0)
- Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems (2022) (0)
- High current JBS rectifiers and their impact on switching power supplies (1985) (0)
- Insulated Gate Bipolar Transistors (2018) (0)
- IGBT Social Impact (2015) (0)
- The BiDFET Device and Its Impact on Converters (2023) (0)
- 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor (2020) (0)
- Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies (2021) (0)
- An experimental analysis of the dual gate emitter switched thyristor (DG-EST) (1999) (0)
- Silicon Carbide Thyristors (2011) (0)
- Shielded Planar MOSFETs (2006) (0)
- Controlled Thyristor Concepts for High Power Op 75 ) Inventors : 73 ) Assignee : 4 , 663 , 547 May 5 , 1987 11 Patent Number : 45 Date of Patent : eration (2017) (0)
- Asymmetric Field Controlled Thyristors (1998) (0)
- Planar Super-Linear MOSFETs (2005) (0)
- Novel SiC High Power IC Technology (2001) (0)
- Coolidge Fellow and Manager, High Voltage Device Program Corporate Research and Development Center (1986) (0)
- Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs (2022) (0)
- 4H SiC Lateral Single Zone RESURF Diodes (1998) (0)
- Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs (2021) (0)
- Power Conversion Systems Enabled by SiC BiDFET Device (2023) (0)
- New Dynamic Power MOSFET Model to Determine Maximum Device Operating Frequency (2019) (0)
- Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications (2021) (0)
- Nonlinear Control of Interactive Power-Electronics Systems (2005) (0)
- Series Connection of 10 kV SiC Current Switches for PWM Current Source Converter Based High Power 7.2 kV Motor Drive Applications (2021) (0)
- Chemical vapor deposition of tin oxide films (1975) (0)
- IGBT Applications: Financial (2015) (0)
- BERYLLIUM ION-IMPLANTED JUNCTIONS IN GALLIUM ARSENIDE WITH SUBMICRON LATERAL DIFFUSION (1985) (0)
- Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction. (1996) (0)
- An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication (2022) (0)
- The use of PSG films as diffusion masks for gallium arsenide (1971) (0)
- PLANAR DIFFUSION IN GALLIUM ARSENIDE FROM TIN-DOPED OXIDES (1979) (0)
- Thin Film Properties of Sputtered Niobium Silicide on SiO2, Si3N4, and N+ Poly-Si. (1986) (0)
- Novel Techniques for the Fabricating and Characterization of GaAs MIS (Metal Insulator Semiconductor) Structures. (1984) (0)
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