Benjamin. Tell
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Physics
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(Suggest an Edit or Addition)Benjamin. Tell's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Raman Effect in Zinc Oxide (1966) (1639)
- Electrical Properties, Optical Properties, and Band Structure of CuGaS 2 and CuInS 2 (1971) (316)
- Room‐Temperature Electrical Properties of Ten I‐III‐VI2 Semiconductors (1972) (315)
- p−dHybridization of the Valence Bands of I-III-VI2Compounds (1972) (239)
- Electronic Structure of AgInSe2and CuInSe2 (1973) (200)
- Raman Effect in Cadmium Sulfide (1966) (168)
- TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS (1992) (127)
- Energy bands of AgInS 2 in the chalcopyrite and orthorhombic structures (1974) (124)
- Optical and Electrical Properties of AgGa S 2 and AgGa Se 2 (1971) (101)
- Near-Forward Raman Scattering in Zinc Oxide (1966) (96)
- A 16*1 wavelength division multiplexer with integrated distributed Bragg reflector lasers and electroabsorption modulators (1993) (89)
- Fast nonlinear optical response from proton‐bombarded multiple quantum well structures (1985) (85)
- High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers (1990) (84)
- Strained quantum wells for polarization-independent electrooptic waveguide switches (1992) (84)
- Aspects of the band structure of CuGa S 2 and CuGa Se 2 (1975) (83)
- Electroreflectance and Absorption-Edge Studies of AgGaS2and AgGaSe2 (1972) (81)
- Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 mu m (1990) (80)
- Diffusion of atomic silicon in gallium arsenide (1988) (73)
- Green electroluminescence from CdS–CuGaS2 heterodiodes (1973) (72)
- Energy band structure of I–III–VI2 semiconductors (1973) (71)
- Photovoltaic properties and junction formation in CuInSe2 (1977) (62)
- Femtosecond excitonic optoelectronics (1989) (57)
- Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures (1988) (56)
- Band Structure of ZnGe P 2 and ZnSi P 2 — Ternary Compounds with Pseudodirect Energy Gaps (1973) (53)
- Ternary phase relations in the vicinity of chalcopyrite copper gallium sulfide (1976) (48)
- Visible Stimulated Emission in Ternary Chalcopyrite Sulfides and Selenides (1971) (46)
- Phosphorus ion implantation induced intermixing of InGaAs‐InP quantum well structures (1989) (46)
- Junction electroluminescence in CuInS2 (1974) (44)
- Active optical NOR logic devices using surface-emitting lasers (1992) (42)
- Semi‐insulating properties of Fe‐implanted InP. I. Current‐limiting properties of n+‐semi‐insulating‐n+ structures (1985) (41)
- High-speed modulation of vertical-cavity surface-emitting lasers (1991) (41)
- 8-wavelength DBR laser array fabricated with a single-step Bragg grating printing technique (1993) (40)
- Quantum well interferometric modulator monolithically integrated with 1.55 mu m tunable distributed Bragg reflector laser (1992) (39)
- Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures (1986) (38)
- Motion of p‐n junctions in CuInSe2 (1976) (37)
- Some properties of AgAlTe 2 , AgGaTe 2 , and AgInTe 2 (1974) (37)
- Disordering of InGaAs‐InP quantum wells by Si implantation (1988) (35)
- Doping studies using thermal beams in chemical‐beam epitaxy (1986) (35)
- Ion implantation of Si and Se donors in In0.53Ga0.47As (1985) (34)
- Deep‐level capacitance spectroscopy of nitrogen‐doped VPE GaP (1978) (34)
- Annealing behavior of ion‐implanted Fe in InP (1985) (33)
- High power laser‐amplifier photonic integrated circuit for 1.48 μm wavelength operation (1991) (32)
- Electrochemichromic cells based on phosphotungstic acid (1978) (32)
- Excitons and the Spin-Orbit Splitting in CuGa S 2 (1973) (32)
- Superionic Conduction in AgCrS2 and AgCrSe2 (1977) (32)
- ENHANCEMENT OF ELASTO‐OPTIC CONSTANTS IN THE NEIGHBORHOOD OF A BAND GAP IN ZnO AND CdS (1965) (30)
- Photovoltaic properties of p‐n junctions in CuInS2 (1979) (29)
- Piezoelectric Ultrasonic Harmonic Generation in Cadmium Sulfide (1964) (29)
- Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement (1984) (29)
- Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers (1991) (29)
- Resistance and mobility changes in InGaAs produced by light ion bombardment (1986) (29)
- Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's (1985) (29)
- Valence-band structure of Cu Ga x In 1 − x S 2 alloys (1974) (29)
- Beryllium implantation doping of InGaAs (1984) (28)
- Characteristics of top-surface-emitting GaAs quantum-well lasers (1990) (28)
- Large blueshifting of InGaAs/InP quantum‐well band gaps by ion implantation (1992) (28)
- High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers (1990) (27)
- Electrochromic effects in solid phosphotungstic acid and phosphomolybdic acid (1979) (27)
- 2 cm long monolithic multisection laser for active modelocking at 2.2 GHz (1993) (27)
- Laser induced refractive index inhomogeneities and absorption saturation effects in CdS (1967) (26)
- Raman Scattering by Coupled Optical-Phonon-Plasmon Modes in GaAs (1968) (26)
- Rapid thermal annealing of elevated-temperature silicon implants in InP (1988) (26)
- Electrochromism in Solid Phosphotungstic Acid (1980) (26)
- Electrical properties of CuGaS2 (1973) (24)
- In0.53Ga0.47As n‐channel native oxide inversion mode field‐effect transistor (1982) (23)
- Properties of Ion‐Implanted Bi in CdS (1969) (23)
- Diffusion studies of the Si δ‐doped GaAs by capacitance‐voltage measurement (1988) (22)
- ION IMPLANTATION OF SODIUM, LITHIUM, AND NEON IN CADMIUM SULFIDE (1970) (22)
- Electrical properties of AgInSe2 (1974) (22)
- Native grown plasma oxides and inversion layers on InGaAs (1981) (21)
- Parallel Optical Interconnections Using Surface-emitting Microlasers And A Hybrid Imaging System (1992) (21)
- Metalorganic vapor‐phase‐epitaxial growth of Fe‐doped In0.53Ga0.47As (1987) (20)
- Tunable two-segment distributed feedback lasers (1989) (20)
- Demonstration of packet switching through an integrated-optic tree switch using photo-conductive logic gates (1990) (19)
- Optoelectronic transient response of the self‐aligned double‐heterostructure optoelectronic switch (1988) (19)
- Semi-insulating properties of Fe-implanted InP. II. Deep levels of Fe from the study of p+-semi-insulating-n+ diodes (1985) (19)
- Spatial localization and diffusion of atomic silicon in delta-doped GaAs (1988) (19)
- Photodetection properties of Cu2Se‐AgInSe2 heterojunctions (1977) (19)
- Effects of Etch Depth and Ion Implantation on Surface Emitting Microlasers (1990) (19)
- Three-section semiconductor optical amplifier for monitoring of optical gain (1992) (18)
- InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 mu m (1990) (18)
- Short wavelength (699 nm) electrically pumped vertical-cavity surface-emitting lasers (1992) (18)
- Polarization-Independent Electro-optic Waveguide Switch Using Strained InGaAs/InP Quantum Wells (1992) (18)
- Demonstration of a p-channel GaAs/AlGaAs BICFET (1988) (17)
- Properties of the Alkalis in CdS (1971) (17)
- Novel organic-on-InP field-effect transistor (1985) (17)
- Atomic diffusion and surface segregation of Si in δ‐doped GaAs grown by gas source molecular beam epitaxy (1990) (17)
- 1×16 photonic switch operating at 1.55 μm wavelength based on optical amplifiers and a passive optical splitter (1992) (16)
- Very high-transconductance heterojunction field-effect transistor (HFET) (1987) (16)
- Capacitance spectroscopy of degraded GaAsP light‐emitting diodes (1978) (16)
- Microcavity enhanced vertical-cavity light-emitting diodes (1993) (16)
- Ionic Conduction in Ternary Chalcogenides (1977) (16)
- Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating mask (1993) (16)
- Interferometric quantum well modulators with gain (1992) (15)
- MOVPE InGaAs/InP grown directly on GaAs substrates (1986) (15)
- Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier (1988) (14)
- High contrast GaInAs:Fe photoconductive optical AND gate for time-division demultiplexing (1988) (14)
- p-type conductivity and green photoluminescence of CuGaS2 grown by iodine transport (1973) (13)
- Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometers (1990) (13)
- Acoustoelectric Effect and Intervalley Scattering Rates in Antimony-Doped Germanium (1966) (13)
- Suppressed photocurrent multiple-quantum-well optical modulators by proton implantation (1992) (12)
- Picosecond photoconductivity studies of light‐ion‐bombarded InP (1984) (12)
- An n-channel BICFET in the GaAs/AlGaAs material system (1989) (12)
- Low temperature continuous operation of vertical-cavity surface-emitting lasers with wavelength below 700 nm (1993) (12)
- Photovoltaic properties of Cu2Se‐AgInSe2 heterojunctions (1976) (12)
- Thermal characteristics of deep red (0.77 mu m) vertical-cavity surface-emitting lasers (1992) (11)
- A p-channel BICFET in the InGaAs/InAlAs material system (1988) (11)
- Operation of a single quantum well heterojunction field‐effect photodetector (1991) (11)
- A frequency reference photonic integrated circuit for WDM with low polarization dependence (1993) (11)
- Gate-length dependence of DC and microwave properties of submicrometer In/sub 0.53/Ga/sub 0.47/As HIGFETs (1989) (11)
- Photoconductivity in AgInSe2 (1975) (11)
- 1.7 Gbit/s transmission over 217 km using a 16*1 photonic integrated circuit transmitter (1993) (10)
- Integration of 1.3 μm wavelength lasers and optical amplifiers (1990) (10)
- Semiconductor-gated InGaAs/InAlAs heterostructure transistors (SISFET's) (1987) (10)
- Some Optical Properties of Cadmium Sulfide Containing Phosphorus and Arsenic (1970) (9)
- Controlled Nonlinearity Monolithic Integrated Optoelectronic Mixing Receiver (1993) (9)
- Small signal and continuous wave operation of the lateral current injection heterostructure field‐effect laser (1992) (9)
- 1 GHz GaInAs:Fe photoconductive optical AND gate with approximately 100 fJ switching energy for time-division access fibre networks (1989) (9)
- A 16x1 WDM Transmitter with Integrated DBR Lasers and Electroabsorption Modulators (1993) (9)
- Monolithic semiconductor soliton transmitter (1993) (9)
- Subnanosecond pulsed laser annealing of Se‐implanted InP (1983) (9)
- Two-wavelength disordered quantum-well photodetector (1988) (8)
- Deep-red (770 nm) continuous-wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers (1991) (8)
- WDM receiver with integrated optical preamplifier, aspheric lens and grating filter (1993) (8)
- High‐resistance regions produced in an (1988) (8)
- InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation (1992) (8)
- Chemical vapor growth and properties of CuA¢lS2 (1975) (7)
- An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate (1982) (7)
- Effects of Implant Temperature on Disordering of AlAs-GaAs Superlattices (1986) (7)
- Determination of ion implantation damage profiles in III-V compounds by means of an electrochemical capacitance-voltage technique (1987) (7)
- Experimental studies of proton-implanted GaAs-AlGaAs multiple-quantum-well modulators for low-photocurrent applications (1994) (7)
- 4.5 Gbit/s modelocked extended-cavity laser with a monolithically integrated electroabsorption modulator (1993) (7)
- An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material system (1989) (6)
- High-Contrast InGaAs:Fe Photoconductive Optical AND Gate for Time-Division Demultiplexing (1988) (6)
- A planar embedded InGaAs photodiode on semi-insulating InP substrate for monolithically integrated PIN-FET receivers, using selective vapor phase epitaxy and ion implantation technique (1983) (6)
- Strained multiquantum well double heterostructure optoelectronic switch and associated heterojunction FET (1991) (6)
- A 1×16 photonic switch operating at 1.55 micron wavelength based on optical amplifiers and a passive optical splitter (1992) (6)
- An Inversion Channel Technology For Opto-Electronic Integration (1988) (6)
- Threshold voltage of submicron Ga/sub 0.47/In/sub 0.53/As HIGFETs (1989) (6)
- A WDM Receiver with an Integrated Optical Preamplifier, Aspheric Lens and Grating Filter (1993) (5)
- Lateral Patterning Of Quantum Well Structures Through Compositional Mixing (1987) (5)
- A new heterostructure FET (1986) (5)
- Terhertz Absorption between Split Subbands in Coupled Quantum Wells (1992) (5)
- Dynamic characteristics of a high-performance vertical-cavity surface-emitting laser (1991) (4)
- Be‐implanted In0.53Ga0.47As diodes with ideal forward current‐voltage characteristics (1984) (4)
- Integration of 1.3 micron wavelength lasers and amplifiers (1990) (4)
- Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implants (1993) (4)
- Current saturation in AgInSe2 (1975) (4)
- Fast Multiple Quantum Well Absorber for Mode Locking of Semiconductor Lasers (1985) (4)
- Pressure‐induced compensation in n‐type AgInSe2 (1978) (4)
- Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si‐implanted InP substrates by molecular beam epitaxy (1992) (4)
- Electron transport in In0.53Ga0.47As/plasma oxide inversion layers (1984) (3)
- CW laser oscillation ionized xenon at 9697 Å (1967) (3)
- High-order transverse modes of top-surface-emitting lasers with various symmetries and sizes: a video demonstration (1990) (3)
- Nearly dispersionless microstrip for 100 GHz pulses utilizing a buried silicide groundplane (1991) (3)
- Incoherent Contact-Print Grating Technology for WDM Laser Sources (1993) (3)
- The inversion channel resonant-cavity enhanced photodetector for two-dimensional optoelectronic array applications (1993) (3)
- Luminescence in ion‐implanted In0.53Ga0.47As (1985) (3)
- High power laser-amplifier photonic integrated circuit for 1.48 micron wavelength operation (1991) (3)
- 1.3 Tbit km/s Transmission Through Non-dispersion Shifted Fiber by Direct Modulation of a Monolithic Modulator/Laser (1992) (3)
- Y-Branch Electro-Optic Waveguide Switch at 1.55 µm using Chopped Quantum Well Electron Transfer Structure (1993) (2)
- Vertical enhancement-mode InP MISFET's fabricated on n-type substrate (1986) (2)
- MONOLITHICALLY INTEGRATED RECEIVER FRONT-END: IN//0//. //5//3GA//0//. //4//7AS PIN-AMPLIFIER. (1987) (2)
- GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology (1988) (2)
- Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs (1987) (2)
- IIIA-8 monolithically integrated receiver front-end: In0.53Ga0.47As PIN-amplifier (1987) (2)
- High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators (1991) (2)
- Ion implantation in Si using a high‐density CO2 laser‐produced boron plasma flux (1981) (1)
- Very high sensitivity optical modulators based on band filling effect in GaInAs quantum wells (1990) (1)
- Terahertz absorption between split subbands in coupled quantum wells (1991) (1)
- DC and microwave performance of submicrometer InGaAs HIGFETs (1988) (1)
- Inversion-channel resonant-cavity-enhanced field-effect photodetector for 2D OEIC applications (1993) (1)
- Integrated Photoreceivers For Long Wavelength Communications Systems - Is The Technology Ready? (1983) (1)
- Threshold voltage of submicron Ga(0.47)In(0.53)As HIGFETs (1989) (1)
- 2.2 GHz active mode-locking in a 2.0 cm long monolithic extended-cavity laser (1993) (1)
- Electron beam fabrication of high‐performance InGaAs/InAlAs heterojunction insulated gate field effect transistors with submicron refractory airbridge gates (1988) (1)
- Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy (1989) (0)
- Excitonic Electroabsorption Field-Mapping of GaAs Quantum Well Devices (1989) (0)
- Femtosecond Excitonic Sampling in Submicron Thickness Coplanar Strips (1990) (0)
- Performance and advantages of BICFETs versus HBTs (1988) (0)
- Complementary transistor technology for use in optoelectronic integrated circuits (1993) (0)
- An In<inf>0.53</inf>Ga<inf>0.47</inf>As p-channel MOSFET with plasma-grown native oxide insulated gate (1982) (0)
- Photocurrent suppression in MQW optical modulators (1992) (0)
- Propagation of 100-GHz Bandwidth Electrical Pulses on a Silicon-Based Microstrip Line with Buried CoSi sub 2 Groundplane, (1992) (0)
- SUPERIONIC CONDUCTION IN SILVER CHROMIUM DISULFIDE AND SILVER CHROMIUM DISELENIDE (1977) (0)
- A Simple Method to Determine Carrier Recombinations in a Semiconductor Laser Optical Amplifier (1993) (0)
- Excitonic electroabsorption sampling: a new approach to femtosecond optoelectronics (1990) (0)
- Responsivity and Excitonic Electroabsorption in Proton-Implanted GaAs/AlGaAs Multiple Quantum Well Modulators (1993) (0)
- Valence Band Structure of CuGa1−xInxS2 Alloys (1974) (0)
- Gate-Length Dependence of DC and Microwave Properties of Submicrometer Ino.53 Gao.47As (1989) (0)
- Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers (1990) (0)
- VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet (1982) (0)
- Propagation of 100 GHz bandwidth electrical pulses on a microstrip line with buried silicide groundplane (1991) (0)
- Optically controlled mode-coupling in microcavity-enhanced light-emitting diodes (1994) (0)
- Observation of absorption between split levels in coupled quantum wells (1991) (0)
- Monolithically integrated quantum well amplifier and interferometric intensity modulator at 1.55 µm (1991) (0)
- Disorder-induced InGaAsP/InP quantum well waveguides via phosphorous ion implantation (1992) (0)
- AC characterisation of the p inverted buried channel heterostructure FET and its suitability for complementary electronics (1995) (0)
- Three-section semiconductor-laser amplifier for monitoring of optical gain (1993) (0)
- Femtosecond excitonic electroabsorption sampling in free-standing GaAs coplanar quantum well stripilnes (1989) (0)
- Low-Responsivity GaAs/AlAs Asymmetric Fabry-Perot Modulators (1993) (0)
- Vertical cavity lasers with a metallic intracavity laser (1991) (0)
- Low-threshold cw top-surface-emitting lasers at 850 nm (1990) (0)
- Excitonic eleclroabsorption mapping spectroscopy (1990) (0)
- InGaAs/InAlAs Quantum Well Electron Transfer Intersecting Waveguide Switch Operating at 1.55 µm (1990) (0)
- Femtosecond Excitonic Electroabsorption Sampling (1989) (0)
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