Bengt Gunnar Svensson
#165,869
Most Influential Person Now
Norwegian physicist and professor
Bengt Gunnar Svensson's AcademicInfluence.com Rankings
Download Badge
Physics
Why Is Bengt Gunnar Svensson Influential?
(Suggest an Edit or Addition)Bengt Gunnar Svensson's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration (2001) (410)
- Identification of oxygen and zinc vacancy optical signals in ZnO (2006) (374)
- Negative-U system of carbon vacancy in 4H-SiC. (2012) (186)
- Electronic structure and optical properties of ZnX ( X=O, S, Se, Te): A density functional study (2007) (185)
- Iron and intrinsic deep level states in Ga2O3 (2018) (158)
- Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO (2011) (156)
- Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations (2011) (151)
- Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy (1989) (142)
- Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation (2012) (140)
- Vacancy defect and defect cluster energetics in ion-implanted ZnO (2010) (123)
- Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide (2008) (120)
- Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide (2005) (111)
- Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 (2019) (110)
- Structural and morphological properties of ZnO:Ga thin films (2006) (105)
- Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing (2006) (104)
- Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration (2001) (103)
- GENERATION OF VACANCY-TYPE POINT DEFECTS IN SINGLE COLLISION CASCADES DURING SWIFT-ION BOMBARDMENT OF SILICON (1997) (90)
- Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence (1987) (89)
- Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional (2011) (81)
- Coulomb correlation effects in zinc monochalcogenides (2006) (80)
- Electrically active defects in irradiated 4H-SiC (2004) (79)
- Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon (2001) (78)
- Heavy doping effects in the diffusion of group IV and V impurities in silicon (1993) (77)
- Palladium Schottky barrier contacts to hydrothermally grown n-ZnOand shallow electron states (2004) (75)
- Vacancy clustering and acceptor activation in nitrogen-implanted ZnO (2008) (74)
- Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO (2007) (72)
- Electronic structure and optical properties of ZnSiO3 and Zn2SiO4 (2009) (71)
- Zinc oxide: bulk growth, role of hydrogen and Schottky diodes (2009) (71)
- Electrically active point defects in n-type 4H–SiC (1998) (69)
- High concentration in-diffusion of phosphorus in Si from a spray-on source (2006) (66)
- A phase-field approach to the simulation of the excimer laser annealing process in Si (2004) (64)
- PEMOCVD of ZnO thin films, doped by Ga and some of their properties (2006) (60)
- Electronic structure and band parameters for ZnX (X = O, S, Se, Te) (2006) (59)
- Radiation-hard semiconductor detectors for SuperLHC (2005) (58)
- Zn vacancy as a polaronic hole trap in ZnO (2017) (57)
- Identification of substitutional Li in n-type ZnO and its role as an acceptor (2011) (57)
- Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers (2001) (57)
- Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling (2009) (56)
- Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy (1995) (56)
- Deep level transient spectroscopy analysis of fast ion tracks in silicon (1990) (56)
- Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si (2002) (55)
- Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon (2005) (54)
- An enhanced photocatalytic response of nanometric TiO2 wrapping of Au nanoparticles for eco-friendly water applications. (2014) (52)
- Lithium and electrical properties of ZnO (2010) (51)
- The influence of ion flux on defect production in MeV proton‐irradiated silicon (1991) (51)
- Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide (2005) (51)
- Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures (2015) (50)
- Ion implantation of silicon carbide (2002) (50)
- Ion implantation of silicon carbide (2002) (50)
- Thin films of In2O3 by atomic layer deposition using In(acac)3 (2009) (49)
- Oxygen-Related Defects in Silicon (1985) (49)
- Nickel atomic diffusion in amorphous silicon (1995) (49)
- Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO (2006) (49)
- Hydrogen-related electron traps in proton-bombarded float zone silicon (1989) (48)
- Formation of carbon vacancy in 4H silicon carbide during high-temperature processing (2014) (48)
- Defect engineering in Czochralski silicon by electron irradiation at different temperatures (2002) (47)
- Kinetic study of oxygen dimer and thermal donor formation in silicon (1998) (47)
- TiO2-coated nanostructures for dye photo-degradation in water (2014) (47)
- Transient enhanced diffusion of implanted boron in 4H-silicon carbide (2000) (45)
- Evidence for identification of the divacancy-oxygen center in Si (2003) (45)
- Surface passivation and interface reactions induced by hydrogen peroxide treatment of n-type ZnO (0001¯) (2009) (45)
- Effect of implanted species on thermal evolution of ion-induced defects in ZnO (2014) (44)
- Effect of heat treatment on ITO film properties and ITO/p-Si interface (2009) (44)
- Development of radiation tolerant semiconductor detectors for the Super-LHC. (2005) (44)
- Zinc-Vacancy-Donor Complex: A Crucial Compensating Acceptor in ZnO (2014) (43)
- Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide (2001) (43)
- Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material (2001) (43)
- Electrical properties of Al2O3∕4H‐SiC structures grown by atomic layer chemical vapor deposition (2007) (43)
- Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon (2000) (43)
- The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? (2011) (42)
- Dynamic annealing in ion implanted SiC: Flux versus temperature dependence (2003) (42)
- Ion implantation induced defects in epitaxial 4H–SiC (1999) (42)
- Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering (2013) (41)
- Hydrogen passivation of silicon carbide by low-energy ion implantation (1998) (41)
- Phosphorus and boron diffusion in silicon under equilibrium conditions (2003) (41)
- Epitaxial silicon devices for dosimetry applications (2007) (41)
- Ion mass effect on vacancy-related deep levels in Si induced by ion implantation (2002) (40)
- Generation of divacancies in silicon by MeV electrons: Dose rate dependence and influence of Sn and P (1992) (40)
- Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients (2012) (40)
- Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon (1999) (39)
- Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals (2003) (39)
- Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon (1986) (38)
- Cubic silicon carbide as a potential photovoltaic material (2016) (38)
- Oxidation of silicon by low energy oxygen bombardment (1994) (38)
- Deuterium diffusion and trapping in hydrothermally grown single crystalline ZnO (2008) (37)
- Conductivity increase of ZnO:Ga films by rapid thermal annealing (2007) (36)
- Vacancy-phosphorus complexes in strained Si 1 − x Ge x : Structure and stability (2003) (36)
- Recent advancements in the development of radiation hard semiconductor detectors for S-LHC (2005) (36)
- The VO2* defect in silicon (2003) (35)
- Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon (2007) (35)
- Bistable defect in mega-electron-volt proton implanted 4H silicon carbide (2004) (35)
- Aluminum Migration and Intrinsic Defect Interaction in Single-Crystal Zinc Oxide (2015) (34)
- Low-dose ion implanted epitaxial 4H–SiC investigated by deep level transient spectroscopy (1999) (34)
- Ion implantation range distributions in silicon carbide (2003) (34)
- Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation (2001) (33)
- Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering (2015) (33)
- Evaluation of possible mechanisms behind P gettering of iron (2011) (33)
- VOn (n≥3) Defects in Irradiated and Heat-Treated Silicon (2005) (32)
- Tin-vacancy acceptor levels in electron-irradiated n-type silicon (2000) (32)
- On the estimation of depth resolution during sputter profiling (1993) (31)
- Generation of divacancies in tin-doped silicon (1987) (31)
- Photocatalytic and antibacterial properties of titanium dioxide flat film (2016) (31)
- Interaction between self-interstitials and the oxygen dimer in silicon (2001) (31)
- Hydrogen implantation into ZnO for n+-layer formation (2005) (30)
- Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon (2001) (30)
- Optical activity and defect/dopant evolution in ZnO implanted with Er (2015) (30)
- Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon (2011) (30)
- Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO (2012) (30)
- Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD (2008) (30)
- Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures (2003) (29)
- Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies (2001) (29)
- Defect evolution and impurity migration in Na implanted ZnO (2011) (29)
- The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD (2012) (29)
- Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC (2005) (28)
- Comparison of near-interface traps in Al2O3∕4H-SiC and Al2O3∕SiO2∕4H-SiC structures (2006) (28)
- Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (2010) (28)
- Influence of temperature during phosphorus emitter diffusion from a spray‐on source in multicrystalline silicon solar cell processing (2007) (27)
- Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species (2015) (27)
- Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm−1 band (2001) (27)
- On the identity of a crucial defect contributing to leakage current in silicon particle detectors (2008) (27)
- Diffusion and configuration of Li in ZnO (2013) (27)
- H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry (2011) (26)
- Reactive‐ion‐ and plasma‐etching‐induced extended defects in silicon studied with photoluminescence (1990) (26)
- Intrinsic point-defect balance in self-ion-implanted ZnO. (2013) (26)
- Divacancy annealing in Si: Influence of hydrogen (2004) (25)
- Characterization of electrically active deep level defects in 4H and 6H SiC (1997) (25)
- Vacancy and interstitial depth profiles in ion-implanted silicon (2003) (24)
- Optical Analysis of a ZnO/Cu2O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell (2017) (24)
- Migration energy for the silicon self-interstitial (1999) (24)
- Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC (2005) (24)
- Effect of spatial defect distribution on the electrical behavior of prominent vacancy point defects in swift-ion implanted Si (2009) (24)
- Sb lattice diffusion in Si1-xGex/Si(001) heterostructures : Chemical and stress effects (2004) (23)
- Morphological instability of bilayers of copper germanide films and amorphous germanium (1995) (23)
- Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon (1999) (23)
- MeV implantation into semiconductors (1993) (23)
- Phase stability and pressure-induced structural transitions at zero temperature in ZnSiO3 and Zn2SiO4 (2009) (22)
- Zn vacancy-donor impurity complexes in ZnO (2018) (22)
- Crucial role of implanted atoms on dynamic defect annealing in ZnO (2014) (22)
- Process dependence of H passivation and doping in H-implanted ZnO (2013) (22)
- Interplay of native point defects with ZnO Schottky barriers and doping (2012) (22)
- Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC (2003) (22)
- Analysis of ITO thin layers and interfaces in heterojunction solar cells structures by AFM, SCM and SSRM methods (2006) (22)
- The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses (1999) (21)
- Diffusion of hydrogen in 6H silicon carbide (1996) (21)
- Proximity gettering of platinum in proton irradiated silicon (1998) (21)
- Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon (1985) (21)
- Vacancy generation in liquid phase epitaxy of Si (2007) (20)
- The E3 center in zinc oxide: Evidence for involvement of hydrogen (2014) (20)
- Structural damage in ZnO bombarded by heavy ions (2010) (20)
- Defect formation and thermal stability of H in high dose H implanted ZnO (2013) (20)
- SB-ENHANCED DIFFUSION IN STRAINED SI1-XGEX : DEPENDENCE ON BIAXIAL COMPRESSION (1999) (19)
- Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperatures (1995) (19)
- Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements (2009) (19)
- Infrared absorption on a complex comprising three equivalent hydrogen atoms in ZnO (2015) (19)
- Extended defects in ZnO: Efficient sinks for point defects (2017) (19)
- Solubility limits of dopants in 4H–SiC (2003) (19)
- Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications (2018) (18)
- Strong Coulomb correlation effects in ZnO (2006) (18)
- Annealing studies of the 862 cm−1 infrared band in silicon (1986) (18)
- Recombination centers in as-grown and electron-irradiated ZnO substrates (2007) (18)
- Generation rate of point defects in silicon irradiated by MeV ions (1993) (18)
- Doping of Silicon Carbide by Ion Implantation (2001) (18)
- Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect (2017) (18)
- Effect of composition on damage accumulation in ternary ZnO-based oxides implanted with heavy ions (2010) (18)
- An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon (2001) (18)
- DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON (1996) (18)
- Point defects in n-type silicon implanted with low doses of MeV boron and silicon ions (1993) (18)
- Annealing study of Sb+ and Al+ ion-implanted ZnO (2005) (18)
- Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects (2016) (18)
- Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO (2009) (17)
- Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation (2011) (17)
- Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C (2000) (17)
- Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment (2015) (17)
- Impurity sublattice localization in ZnO revealed by Li marker diffusion. (2013) (17)
- Ion implantation in 4H–SiC (2008) (17)
- Native Point Defects at ZnO Surfaces, Interfaces and Bulk Films (2012) (17)
- Acceptor-like deep level defects in ion-implanted ZnO (2012) (17)
- Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation (1996) (17)
- Formation and origin of the dominating electron trap in irradiated p-type silicon (2008) (17)
- Improving carrier transport in Cu2O thin films by rapid thermal annealing (2018) (17)
- Vacancy-related deep levels in n-type Si1-xGex strained layers (2001) (17)
- Thermal stability of the OH–Li complex in hydrothermally grown single crystalline ZnO (2010) (17)
- Defects related to electrical doping of 4H-SiC by ion implantation (2017) (17)
- Annealing studies of point defects in low dose MeV ion implanted silicon (1997) (17)
- Analysis of thin layers and interfaces in ITO/a-Si:H/c-Si heterojunction solar cell structures by secondary ion mass spectrometry (2006) (17)
- Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon (2003) (16)
- Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC (2008) (16)
- Oxidation-enhanced annealing of implantation-induced Z(1/2) centers in 4H-SiC: Reaction kinetics and modeling (2012) (16)
- Electrical properties of copper-silicon Schottky barriers (1991) (16)
- Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (2017) (16)
- Photoluminescence of reactively sputtered Ag2O films (2013) (15)
- Copper germanide Schottky barrier contacts to silicon (1996) (15)
- Improving carrier transport in Cu2O thin films by rapid thermal annealing. (2018) (15)
- Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C (1997) (15)
- Kinetics of thin-film reactions of Cu/a-Ge bilayers (1997) (15)
- Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon (2002) (15)
- Self-diffusion of 12C and 13C in intrinsic 4H-SIC (2004) (14)
- Room-temperature annealing of vacancy-type defect in high-purity n-type Si (2007) (14)
- Integration of Melting Excimer Laser Annealing in Power MOS Technology (2007) (14)
- Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions (1996) (14)
- Cd diffusion and thermal stability of CdZnO/ZnO heterostructures (2011) (14)
- Electronic properties of vacancy related defects in ZnO induced by mechanical polishing (2011) (14)
- Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon (1998) (14)
- The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon (2005) (14)
- Impurity-limited lattice disorder recovery in ion-implanted ZnO (2012) (14)
- Point Defects in Silicon Carbide (2015) (14)
- Excess vacancies in high energy ion implanted SiGe (2007) (14)
- Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy (2009) (14)
- Diffusion of light elements in 4H– and 6H–SiC (1999) (14)
- Evolution kinetics of elementary point defects in ZnO implanted with low fluences of helium at cryogenic temperature (2016) (14)
- Epitaxial Strain-Induced Growth of CuO at Cu2O/ZnO Interfaces (2016) (14)
- Ion implantation induced defects in ZnO (2012) (13)
- Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress (2004) (13)
- Interaction Between Na and Li in ZnO (2009) (13)
- Iron and intrinsic deep level states in Ga 2 O 3 (2018) (13)
- Self-diffusion measurements in isotopic heterostructures of undoped and in situ doped ZnO: Zinc vacancy energetics (2016) (13)
- Annealing study of a bistable defect in proton-implanted n-type 4H-SiC (2003) (13)
- Isotope effects for ion-implantation profiles in silicon (1991) (13)
- Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells (2013) (13)
- Rearrangement of the oxide-semiconductor interface in annealed Al2O3∕4H-SiC structures (2007) (13)
- Determination of interstitial oxygen concentration in germanium by infrared absorption (2006) (13)
- Excimer Laser annealing for shallow junction formation in Si power MOS devices (2006) (13)
- Electronic properties of the Sm∕4H-SiC surface alloy (2006) (13)
- Visualization of MeV ion impacts in Si using scanning capacitance microscopy (2006) (13)
- Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism (2018) (13)
- Annealing of ion implanted CdZnO (2012) (13)
- Radiation hardness of silicon detectors based on pre-irradiated silicon (2006) (12)
- Iron related donor-like defect in zinc oxide (2013) (12)
- Interplay of dopants and native point defects in ZnO (2013) (12)
- Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion (2014) (12)
- Formation and annihilation of E4 centers in ZnO: Influence of hydrogen (2016) (12)
- Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu (2007) (12)
- Channeled Implants in 6H Silicon Carbide (2000) (12)
- Formation of donor and acceptor states of the divacancy–oxygen centre in p-type Cz-silicon (2012) (12)
- Hydrogen motion in rutile TiO2 (2017) (12)
- Carrier Removal in Electron Irradiated 4H and 6H SiC (2008) (12)
- Control of Li configuration and electrical properties of Li-doped ZnO (2012) (12)
- Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies (2009) (12)
- Annealing of defects in irradiated silicon detector materials with high oxygen content (2005) (12)
- Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon (2008) (12)
- Optical and morphological features of bulk and homoepitaxial ZnO (2006) (11)
- Defects in p-type Cz-silicon irradiated at elevated temperatures (2012) (11)
- Transient boron diffusion in medium dose germanium‐implanted silicon (1992) (11)
- Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers (2000) (11)
- Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO (2013) (11)
- Ion Implantation Processing and Related Effects in SiC (2006) (11)
- Capacitance transient study of the metastable M center in n-type 4H-SiC. (2005) (11)
- Electronic stopping cross sections in silicon carbide for low-velocity ions with 1⩽Z1⩽15 (2004) (11)
- Annealing of divacancy-related infrared absorption bands in boron-doped silicon (1989) (11)
- Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers (2007) (11)
- Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment (2019) (11)
- Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films (2006) (11)
- Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates (2014) (11)
- Electronic properties of n-ZnO(Al)/p-Si heterojunction prepared by dc magnetron sputtering (2011) (11)
- Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures (1999) (11)
- Silver migration and trapping in ion implanted ZnO single crystals (2016) (11)
- Annealing study of hydrothermally grown ZnO wafers (2006) (10)
- Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering (2016) (10)
- Thermally induced surface instability in ion-implanted MgxZn1−xO films (2011) (10)
- The influence of structural defects on phosphorus diffusion in multicrystalline silicon (2006) (10)
- Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO (2011) (10)
- Aluminum and boron diffusion in 4H-SiC (2002) (10)
- Interaction between copper and point defects in proton‐irradiated silicon (1992) (10)
- 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects (1999) (10)
- Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures (2019) (10)
- Electrical activation phenomena induced by excimer laser annealing in B-implanted silicon (2004) (10)
- Damage Evolution in Al-implanted 4H SiC (2000) (9)
- SIMS and depth profiling of semiconductor structures (1994) (9)
- Electronic states at the interface between indium tin oxide and silicon (2011) (9)
- The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures (2016) (9)
- Enhanced boron diffusion in excimer laser preannealed Si (2005) (9)
- Al and Si doping of sputtered ZnO thin films (2012) (9)
- Boron Electrical Activation in Crystalline Si after Millisecond Nonmelting Laser Irradiation (2008) (9)
- Defect distributions in MeV ion bombarded silicon (1993) (9)
- OXIDATION OF SILICON BY LOW ENERGY OXYGEN IONS (1997) (9)
- Electronic properties of the interface between Si and sputter deposited indium-tin oxide (2009) (9)
- Electric-field-assisted migration and accumulation of hydrogen in silicon carbide (2000) (9)
- Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification (2007) (9)
- Hall effect studies of donors and acceptors in different types of bulk ZnO modified by annealing and hydrogen implantation (2008) (9)
- Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014) (9)
- Interfacial studies of Al2O3 deposited on 4H‐SiC(0001) (2008) (9)
- Thermal donor formation in electron‐irradiated Czochralski silicon (1986) (9)
- Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC (2004) (9)
- High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC (2006) (9)
- Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy (2003) (9)
- Hydrogen induced optically-active defects in silicon photonic nanocavities. (2014) (8)
- Mechanism of de-activation and clustering of B in Si at extremely high concentration (2006) (8)
- Schottky contacts to hydrogen doped ZnO (2008) (8)
- Mobility passivating effect and thermal stability of hydrogen in silicon carbide (1998) (8)
- An investigation of the stability of copper germanide thin films in the presence of Si and SiO2 (1994) (8)
- Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon (2011) (8)
- Enhanced diffusion of platinum in electron-irradiated silicon (1999) (8)
- Reverse annealing effects in heavy ion implanted silicon (1999) (8)
- Effect of buried extended defects on the radiation tolerance of ZnO (2017) (8)
- Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation (1999) (8)
- Implantation Temperature Dependent Deep Level Defects in 4H-SiC (2001) (8)
- Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide (2018) (8)
- Deep acceptor states of platinum and iridium in 4H-silicon carbide (2004) (8)
- Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials (2015) (8)
- Trivacancy-oxygen complex in silicon: Local vibrational mode characterization (2009) (8)
- Isotope effects for mega‐electron‐volt boron ions in amorphous silicon (1993) (8)
- Equilibrium shape of nano-cavities in H implanted ZnO (2015) (8)
- On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C (2006) (8)
- Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC (2005) (8)
- Evolution of high-dose implanted hydrogen in ZnO (2005) (8)
- Processing of silicon UV-photodetectors (2001) (8)
- Surface recession and oxidation of silicon during bombardment by low energy oxygen ions (1994) (7)
- Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors (2017) (7)
- Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study (2013) (7)
- Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking (2003) (7)
- Irradiation enhanced diffusion of boron in delta-doped silicon (2001) (7)
- Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon (2011) (7)
- Influence of boron on radiation enhanced diffusion of antimony in delta-doped silicon (2002) (7)
- The Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM-EELS Nanoscale Investigations. (2019) (7)
- Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1−xGex (2006) (7)
- Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures (2019) (7)
- Lattice Disorder Effects on The Vacancy-Oxygen Centre in Ion-Irradiated Silicon (1997) (7)
- Kinetics study of vacancy–oxygen‐related defects in monocrystalline solar silicon (2014) (7)
- SIMS analysis of epitaxial layers for power- and micro-electronics (1998) (7)
- Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications (2020) (7)
- Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen (2012) (7)
- Improved lifetime characteristics in heavy ion irradiated silicon (1997) (7)
- Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC (2005) (7)
- Boron distribution in silicon after multiple pulse excimer laser annealing (2005) (7)
- Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500–850°C (1999) (7)
- Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon (2015) (7)
- PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si (2013) (6)
- Electronic properties and morphology of copper oxide/n-type silicon heterostructures (2017) (6)
- Injection of self-interstitials during sputter depth profiling of Si at room temperature (1998) (6)
- Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum (1999) (6)
- Electronic Properties of ZnO/Si Heterojunction Prepared by ALD. (2011) (6)
- Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС (2018) (6)
- Oxidation of 4H–SiC covered with a SmSix surface alloy (2006) (6)
- Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC (2001) (6)
- Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon (2018) (6)
- Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses (1999) (6)
- Carrier concentration and shallow electron states in In-doped hydrothermally grown ZnO (2005) (6)
- Single-crystal TiO2 nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties (2016) (6)
- Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature (2018) (6)
- Optical signatures of single ion tracks in ZnO (2019) (6)
- Electrical Characterization of Hydrothermally Grown ZnO Annealed in Different Atmospheres (2011) (6)
- Divacancy distributions in fast ion irradiated silicon (1994) (6)
- Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers (2001) (6)
- The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures (2002) (6)
- Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing (2006) (6)
- Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys (2019) (6)
- Bandgap bowing in crystalline (ZnO)1−x(GaN)x thin films; influence of composition and structural properties (2018) (6)
- Dissociation of deuterium-defect complexes in ion-implanted epitaxial 4H-SiC (1998) (6)
- Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films (2006) (5)
- Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres (1999) (5)
- Trivacancy in silicon: A combined DLTS and ab-initio modeling study (2009) (5)
- Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering (2017) (5)
- Structural, optical and electrical properties of reactively sputtered Ag2Cu2O3 films (2011) (5)
- Defect and dopant kinetics in laser anneals of Si (2008) (5)
- Annealing study of H2O and O3 grown Al2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC (2006) (5)
- Photoinduced small polarons bound to hydrogen defects in rutile TiO 2 (2017) (5)
- Phosphorus Diffusion in Si1-x Gex (2001) (5)
- Electronic structure and optical properties of Zn X ( X = O , S , Se , Te ) : A density functional study (2007) (5)
- Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon (2016) (5)
- Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide (2015) (5)
- Effects of Substrate and Post‐Deposition Annealing on Structural and Optical Properties of (ZnO)1−x(GaN)x Films (2019) (5)
- Impurity migration in bulk and thin-film ZnO (2012) (5)
- COPPER DIFFUSION IN AMORPHOUS GERMANIUM (1998) (5)
- Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2 (2018) (5)
- Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC (2004) (5)
- The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms (2017) (5)
- M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate (2005) (5)
- Basic optical and electronic properties of Ag2Cu2O3 crystalline films (2013) (5)
- The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique (2007) (5)
- Local vibrational modes of the oxygen trimer in Si (2011) (5)
- Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide (2004) (5)
- The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon (2013) (5)
- DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes (2016) (5)
- High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate (2015) (5)
- Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC (2005) (5)
- On the Core of the Thermal Donors in Silicon (1985) (5)
- Thin film Cu2O for solar cell applications (2016) (4)
- Divacancy-iron complexes in silicon (2013) (4)
- Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States (2011) (4)
- Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance (2008) (4)
- Thermal stability of the prominent compensating (AlZn–VZn) center in ZnO (2016) (4)
- Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon (1992) (4)
- Millisecond processing beyond chip technology: From electronics to photonics (2007) (4)
- Range Distributions of Implanted Ions in Silicon Carbide (2002) (4)
- Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon (2002) (4)
- Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals (2009) (4)
- Excimer laser annealing of shallow As and B doped layers (2004) (4)
- Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics (2018) (4)
- Shallow Copper-Related Complexes in P-Type Silicon (1991) (4)
- Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes (2016) (4)
- Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen (2000) (4)
- The Deep Boron Level in High-Voltage PiN Diodes (2002) (4)
- Residual defects in Cz-silicon after low dose self-implantation and annealing from 400°C to 800°C (1999) (4)
- The European answer to the integration issues of excimer laser annealing in MOS technology (2004) (4)
- Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions (1993) (4)
- Formation and evolution of E3 centers in hydrothermally grown zinc oxide (2017) (4)
- Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption (2005) (4)
- Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon (2019) (4)
- A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers (2003) (4)
- Formation of Nano-Structures on ITO Antireflection Coating by Hydrogen Plasma Treatments (2006) (4)
- Hydrogen-related defects in boron doped p-type silicon (2011) (4)
- EFFECT OF INJECTION OF SI SELF-INTERSTITIALS ON SB DIFFUSION IN SI/SI1-XGEX/SI HETEROSTRUCTURES (1998) (4)
- The influence of Fe impurities on the annealing of OH–Li complexes in ZnO (2016) (4)
- Boron-Implanted 3C-SiC for Intermediate Band Solar Cells (2016) (4)
- Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy (1997) (4)
- Laplace transform transient spectroscopy study of a divacancy-related double acceptor centre in Si (2003) (4)
- Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth (2002) (4)
- Silicon implanted with MeV 12C ions; temperature dependence of defect formation at low doses (1995) (4)
- X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC (2007) (4)
- Investigation of the indium-boron interaction in silicon (2006) (4)
- Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap (2018) (4)
- Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen (1999) (4)
- Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions (1999) (3)
- Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors (2013) (3)
- Anomalous field dependence of deep level emission in proton irradiated silicon (1999) (3)
- Deep level transient spectroscopy on proton‐irradiated Fe‐contaminated p‐type silicon (2012) (3)
- Transient kinetics in solid phase epitaxy of Ni doped amorphous silicon (1995) (3)
- Precipitate Formation in Heavily Al-Doped 4H-SiC Layers (2001) (3)
- Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination (2016) (3)
- Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si (2009) (3)
- Boron-enhanced diffusion in excimer laser annealed Si (2004) (3)
- Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon (2018) (3)
- Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures (2013) (3)
- Diffusion of indium in single crystal zinc oxide: a comparison between group III donors (2019) (3)
- Formation kinetics of trivacancy-oxygen pairs in silicon (2014) (3)
- Long range lateral migration of intrinsic point defects in n-type 4H-SiC (2012) (3)
- High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C (2016) (3)
- Formation and Annihilation of Carbon Vacancies in 4H-SiC (2016) (3)
- Interface phenomena in magnetron sputtered Cu2O/ZnO heterostructures (2017) (3)
- Boron distribution in silicon after excimer laser annealing with multiple pulses (2005) (3)
- Electrically active defects in silicon produced by ion channeling (2003) (3)
- Damage accumulation and annealing behavior in high fluence implanted MgZnO (2012) (3)
- Zn precipitation and Li depletion in Zn implanted ZnO (2016) (3)
- Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment (2016) (3)
- Palladium Schottky barrier contacts to the (0001̄)‐ and (101̄0)‐face of hydrothermally grown n‐ZnO (2005) (3)
- Erratum: Oxidation-enhanced annealing of implantation-induced Z1/2centers in 4H-SiC: Reaction kinetics and modeling [Phys. Rev. B86, 075205 (2012)] (2012) (3)
- Dopant redistribution and formation of electrically active complexes in SiGe (2001) (3)
- Hydrogen Migration in Single Crystalline ZnO (2007) (3)
- Rapid Migration of Defects in Ion-Implanted Silicon (1997) (3)
- Structural and optical properties of individual Zn2GeO4 particles embedded in ZnO (2019) (3)
- Hydrogen–boron complex formation and dissociation in 4H–silicon carbide (2001) (3)
- Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition (2001) (3)
- Local homoepitaxy of zinc oxide thin films by magnetron sputtering (2016) (3)
- Boron Redistribution During Formation of Cobalt Silicides (1992) (3)
- Excimer laser annealing of B and BF2 implanted Si (2005) (3)
- Characterization of Cuprous Oxide Thin Films Prepared by Reactive Direct Current Magnetron Sputtering (2018) (3)
- Formation of shallow front emitters for solar cells by rapid thermal processing (2012) (3)
- Electro-Optical Analysis and Numerical Modeling of Cu2O as the Absorber Layer in Advanced Solar Cells (2018) (2)
- Reconfigurations and diffusion of trivacancy in silicon (2012) (2)
- Characterization of Cuprous Oxide Thin Films for Application in Solar Cells (2019) (2)
- Defect Behaviour in Deuterated and Non-Deuterated n-Type Si (2005) (2)
- A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon (1992) (2)
- A comparison of extended defect formation induced by ion implantation in (0 0 0 1) and (1 1 2 0) 4 (2003) (2)
- Shallow depth profiles of arsenic and boron in CoSi2 measured by secondary ion mass spectrometry (1992) (2)
- A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation (2010) (2)
- Phase Transformations in a-Si/Ni/C-Si Structures with Different Interfacial Ni Layer Thicknesses (1994) (2)
- Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy (2006) (2)
- Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy (2006) (2)
- Phosphorus diffusion in silicon; influence of annealing conditions (2001) (2)
- Capacitance-voltage characteristics of Au-Si Schottky diodes: influence of electron irradiation (1989) (2)
- Interfacial studies of Al 2 O 3 deposited on 4 H-SiC ( 0001 ) (2012) (2)
- Magnetic resonance studies of defects in electron-irradiated ZnO substrates (2007) (2)
- DLTS Study of Room-Temperature Defect Annealing in High-Purity n-Type Si (2006) (2)
- Lifetime and DLTS studies of interstitial Fe in p‐type Si (2011) (2)
- Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments (2016) (2)
- Ion-activated interface adsorption of oxygen during silver deposition on silicon (1991) (2)
- Ultra-shallow junction by laser annealing: Integration issues and modelling (2006) (2)
- Diffusion of phosphorus in strained Si/SiGe/Si heterostructures (1999) (2)
- Interaction between Copper and Irradiation-Induced Defects in Crystalline Silicon (1992) (2)
- Electrical Properties of Copper Silicide/Silicon Interfaces (1993) (2)
- Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering (2015) (2)
- Impurity Profiles in InP from Ion Implantation at Elevated Temperatures (1991) (2)
- Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon (2013) (2)
- Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells (2016) (2)
- Defect Generation and Evolution in Laser Processing of Si (2007) (2)
- Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon (2015) (2)
- Reversible room temperature interaction of impurities in Si (2005) (2)
- Evaluation of boron distributions in amorphous 49BF2+-implanted silicon (1991) (2)
- On the core concentration and the formation kinetics of thermal donors in silicon (1989) (2)
- The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon (1986) (2)
- Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS (2019) (2)
- Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC (1997) (2)
- Studies on Nanostructure ITO Thin Films on Silicon Solar Cells (2013) (1)
- Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS (2004) (1)
- Phase stability and pressure-induced structural transitions in ZnSiO 3 and Zn 2 SiO 4 (2007) (1)
- Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes (2004) (1)
- Electronic structure and optical properties of ZnSiO 3 and Zn 2 SiO 4 (2006) (1)
- Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy (2010) (1)
- The interaction between lithium acceptors and gallium donors in zinc oxide (2018) (1)
- Optical and electrical properties of reactively sputtered Ag2Cu2O3 films (2012) (1)
- Transportation of Na and Li in Hydrothermally Grown ZnO (2009) (1)
- Dynamic defect annealing in wurtzite MgZnO implanted with Ar ions (2015) (1)
- Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC (2000) (1)
- Self-interstitial migration during ion irradiation of boron delta-doped silicon (2000) (1)
- Influence of Annealing on the Al2O3/4H-SiC Interface (2008) (1)
- Overlapping Deep Levels in Electron-Bombarded N-Type Silicon (1991) (1)
- Defects and diffusion in high purity silicon for detector applications (2004) (1)
- Shallow Donors in Silicon Crystallized from Amorphous Phase via a Silicide Mediated Epitaxy (1998) (1)
- (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing (2018) (1)
- Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon (1986) (1)
- Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces (2014) (1)
- The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface (2011) (1)
- Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique (2009) (1)
- Bragg reflector based gate stack architecture for process integration of excimer laser annealing (2006) (1)
- Formation of Nickel Silicides on Ion-Amorphized Silicon (1992) (1)
- Proceedings of Symposium T, E-MRS 2006 Spring Meeting on "Germanium based semiconductors from materials to devices" Materials Science in Semiconductor Processing, Volume 9, Issues 4-5, August-October 2006 (2006) (1)
- Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon (1993) (1)
- Identification of vacancy phosphorus complexes in strained Si1−xGex (2003) (1)
- Deep states of Pt, Ir, and Os in Silicon Carbide (2005) (1)
- Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. 80, 1492 (2002)] (2002) (1)
- Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC (2007) (1)
- Scanning probe microscopy of single Au ion implants in Si (2006) (1)
- Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer (2012) (1)
- Hydrogen motion in rutile TiO2 (2017) (1)
- Thermal donor and antimony energy levels in relaxed Si 1-x Ge x layers (2000) (1)
- CHARACTERIZATION OF Cu 2 O THIN FILMS USED IN SOLAR CELLS BY FLUORESCENCE AND FTIR SPECTROSCOPY (2018) (1)
- Structural and optical properties of H implanted ZnO (2012) (1)
- Investigation of contact material for cross section scanning spreading resistance microscopy on zinc oxide (2008) (1)
- Electrically Active Defects in n-Type 4H- and 6H-SiC (1997) (1)
- Influence of layer thickness and primary ion on profile broadening during sputtering of Al0.5Ga0.5As/GaAs structures (1994) (1)
- Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si (2001) (1)
- ULTRA-SHALLOW THERMAL DONOR FORMATION IN OXYGEN-CONTAINING AMBIENT (1998) (1)
- Electrically active centers introduced in p-type Si by rapid thermal processing (2011) (1)
- Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC (2018) (1)
- Secondary ion mass spectrometry measurements of shallow boron profiles in cobalt, silicon, and cobalt disilicide (1994) (1)
- Characterization of the SiO2/SiC Interface with Impedance Spectroscopy (2009) (1)
- Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation (2011) (1)
- Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing (2007) (1)
- Observation of near-surface electrically active defects in n-type 6H-SiC (1998) (1)
- Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering (2003) (1)
- Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC (2018) (1)
- XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO2/Ce2Si2O7/4H-SiC Interface Structure upon Oxidation (2007) (1)
- STRUCTURAL AND ELECTRICAL ANALYSIS OF CU 2 O LAYERS FOR SOLAR CELL APPLICATION (2018) (0)
- Correlation between divacancy acceptor states in ion implanted n+p Si diodes studied by DLTS (2006) (0)
- Irradiation Induced Carrier Loss in 4H and 6H SiC (2006) (0)
- SIMS Study of 30keV H+ Ion-Implanted n-GaAs (2011) (0)
- Dopant Diffusion in Si1-xGex Thin Films: Effect of Epitaxial Stress (2006) (0)
- Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017) (2017) (0)
- Processing and Characterization of Hydrothermally Grown ZnO (2006) (0)
- The zinc vacancy – donor complex: A relevant compensating center in n-type ZnO (invited talk) (2016) (0)
- Defects in Electron Irradiated ZnO : An Electron Paramagnetic Resonance Study (2013) (0)
- Simulation and electrical characterization of Pd as Schottky contact on hydrothermally grown ZnO (2012) (0)
- DLTS Study of Room-Temperature Defect Annealing in N-Type High-Purity FZ Si (2006) (0)
- Calculation of Recoil-Induced Ionization Distributions in Solids Bombarded by Ions (1985) (0)
- Point defects in ion implanted p-type silicon (1996) (0)
- Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon (2011) (0)
- Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen (1995) (0)
- Title : Vacancy defect and defect cluster energetics in ion-implanted ZnO Year : 2010 Version : Final (2015) (0)
- Electronic properties of Au/Cu2O/n-type Si heterojunction for energy conversion (2016) (0)
- Thermal and non-thermal kinetics of defects and dopant in Si (2008) (0)
- Electronic properties of Au/Cu2O/n-type Si heterojunction for energy conversion (2016) (0)
- The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC (2009) (0)
- Structural properties and thermal stability of CdZnO/ZnO heterostructures grown on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) have been studied. Zn/Cd interdiffusion and Cd evaporation appear as key factors limiting the thermal stability of CdZnO/ZnO heterostructures. (2011) (0)
- Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C (1997) (0)
- Hydrogen interaction with electrically active centers in silicon (2009) (0)
- Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films (2013) (0)
- Excimer laser annealing: A solution for the future technology nodes ? (2003) (0)
- Control of The Sb Redistribution in Strained SiGe Layers Using Point Defect Injection (1998) (0)
- Millisecond processing beyondchiptechnology: Fromelectronics tophotonics (2007) (0)
- Channeling Measurements of Ion Implantation Damage in 4H-SiC (2001) (0)
- Passivation de surface de galettes à base de silicium (2006) (0)
- Effect of Interfacial Hydrogen in CoSi2/Si(100) Schottky-Barrier Contacts (1993) (0)
- Scanning capacitance microscopy of Si implanted with single Au+ ions (2005) (0)
- Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers (1999) (0)
- The Aluminum - zinc vacancy complex in ZnO: An EPR study (2015) (0)
- Perspectives and advantages of the use of excimer laser annealing for MOS technology (2006) (0)
- Implanted p + n-Junctions in Silicon Carbide (2003) (0)
- Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors (2001) (0)
- Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study (2018) (0)
- The 21st Nordic Semiconductor Meeting (2006) (0)
- Investigation of n-Al:ZnO/p-Cu2O heterojunction for c-Si tandem heterojunction solar cell applications (2019) (0)
- Deep level transient spectroscopy studies of electrically active centers in solar-grade Si (2010) (0)
- SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders (2015) (0)
- Effect of implant activation annealing conditions on the inversion channel mobility in 4H- and 6H-SiC MOSETs (1999) (0)
- Intrinsic point defects and their interaction with impurities in mono-crystalline zinc oxide (2015) (0)
- Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer (2009) (0)
- Impurity-assisted annealing of point defect complexes in ion- implanted silicon (1999) (0)
- Computational methods for the simulation of the excimer laser annealing in MOS technology (2004) (0)
- Proximity gettering of platinum in silicon following implantation with alpha particles at low doses (2000) (0)
- Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4 HSi C (2014) (0)
- Electron Paramagnetic Resonance Investigations of Defects in Electron Irradiated ZnO (2013) (0)
- Efficient Auger Charge-Transfer Processes in ZnO (2018) (0)
- Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy (2016) (0)
- Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570°C (2001) (0)
- Electronic structure and optical properties of ZnSiO 3 and Zn 2 SiO 4 S (2015) (0)
- Title : Identification of substitutional Li in n-type ZnO and its role as an acceptor Year : 2011 Version : Final (2015) (0)
- Erratum: Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014 J. Phys. D: Appl. Phys. 47 342001) (2014) (0)
- Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing (2006) (0)
- Electrically active centers induced by electron irradiation in n-type si detectors (2005) (0)
- Title : Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO Year : 2006 Version : Final (2015) (0)
- Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation (2007) (0)
- The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600°C following 2-MeV electron irradiation (1999) (0)
- Correlated annealing and formation of vacancy-hydrogen related complexes in silicon (2019) (0)
- Synthesis and characterization of single-crystal TiO2 Nanowires by thermal oxidation of Ti foil (2017) (0)
- Combined ion implantation for defect engineering in GaN and ZnO (2016) (0)
- Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ions (1996) (0)
- Infrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV Peak (1991) (0)
- Optical Properties of Novel Vibronic Bands in Electron-Irradiated Tin Doped Silicon (1989) (0)
This paper list is powered by the following services:
What Schools Are Affiliated With Bengt Gunnar Svensson?
Bengt Gunnar Svensson is affiliated with the following schools:
