Claudio Canali
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(Suggest an Edit or Addition)Claudio Canali's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A review of some charge transport properties of silicon (1977) (1009)
- Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature (1975) (553)
- Electron drift velocity in silicon (1975) (397)
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004) (303)
- Drift velocity of electrons and holes and associated anisotropic effects in silicon (1971) (257)
- Hole drift velocity in silicon (1975) (179)
- Electron' drift velocity and diffusivity in germanium (1981) (156)
- Electron effective masses and lattice scattering in natural diamond (1980) (151)
- Electrical properties and performances of natural diamond nuclear radiation detectors (1979) (134)
- Hole-drift velocity in natural diamond (1981) (132)
- GaSe: A layer compound with anomalous valence band anisotropy (1974) (108)
- Pt2Si and PtSi formation with high‐purity Pt thin films (1977) (101)
- Hole drift velocity in germanium (1977) (99)
- A Temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements (1982) (95)
- Breakdown walkout in pseudomorphic HEMT's (1996) (94)
- Structural characterization of proton exchanged LiNbO3 optical waveguides (1986) (94)
- Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors (1975) (88)
- Piezoresistive effects in thick‐film resistors (1980) (87)
- Charge transport in layer semiconductors (1976) (85)
- Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors (1975) (83)
- High‐field diffusion of electrons in silicon (1975) (82)
- Impact ionization and light emission in AlGaAs/GaAs HEMT's (1992) (79)
- On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness (1999) (79)
- Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs (1993) (75)
- Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's (1986) (74)
- Piezoresistivity effects in MOS-FET useful for pressure transducers (1979) (69)
- Phase diagrams and metal‐rich silicide formation (1979) (69)
- Epitaxial silicon carbide charge particle detectors (1999) (68)
- Performance of a new ohmic contact for GaAs particle detectors (1995) (64)
- Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray Detectors (1974) (60)
- Self-compensation in CdTe (1974) (59)
- Transport Properties of CdTe (1971) (59)
- Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's (1996) (57)
- Transport Properties of Natural Diamond Used as Nuclear Particle Detector for a Wide Temperatue Range (1979) (52)
- On the formation of Ni and Pt silicide first phase: The dominant role of reaction kinetics (1978) (51)
- Hole mobility and Poole‐Frenkel effect in CdTe (1973) (49)
- Dependence of ionization current on gate bias in GaAs MESFETs (1993) (48)
- Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown (2001) (48)
- Evidence of interface trap creation by hot‐electrons in AlGaAs/GaAs high electron mobility transistors (1996) (48)
- TiO2, LiNb3O8, and (TixNb1−x)O2 compound kinetics during Ti:LiNbO3 waveguide fabrication in the presence of water vapors (1985) (47)
- Interdiffusion and compound formation in the cSi/PtSi/(TiW)/Al system (1982) (45)
- Characterization of TiO2, LiNb3O8, and (Ti0.65Nb0.35)O2 compound growth observed during Ti:LiNbO3 optical waveguide fabrication (1983) (43)
- Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons (1995) (42)
- Fabrication and characteristics of optical waveguides on LiNbO3 (1983) (42)
- Hole drift velocity in high‐purity Ge between 8 and 220 °K (1973) (41)
- Deep levels in silicon carbide Schottky diodes (2002) (41)
- Strain Sensitivity in Thick-Film Resistors (1980) (40)
- Measurement of the electron ionization coefficient at low electric fields in InGaAs‐based heterojunction bipolar transistors (1995) (39)
- Growth kinetics of Pd2Ge and PdGe on single-crystal and evaporated germanium (1977) (39)
- On the lattice scattering and effective mass of holes in natural diamond (1979) (39)
- Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence (2000) (39)
- Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer (1998) (39)
- Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320°K (1972) (39)
- Crystalline and optical quality of proton exchanged waveguides (1986) (38)
- Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers (1990) (38)
- On the diffusivity of holes in silicon (1979) (38)
- Characterization of (Ti0.65Nb0.35)O2 compound as a source for Ti diffusion during Ti:LiNbO3 optical waveguides fabrication (1983) (37)
- Solid‐phase epitaxial growth of Si through palladium silicide layers (1975) (37)
- Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's (1993) (37)
- Hot electron effects on Al/sub 0.25/Ga/sub 0.75/As/GaAs power HFET's under off-state and on-state electrical stress conditions (2000) (36)
- Solid‐phase transport and epitaxial growth of Ge and Si (1974) (34)
- Investigation on the charge collection properties of a 4H-SiC Schottky diode detector (2002) (34)
- Characterization of high resistivity CdTe for γ-ray detectors (1971) (33)
- Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTs (1997) (33)
- A 40 keV Pulsed Electron Accelerator (1970) (33)
- Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's (1996) (32)
- Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) (2003) (29)
- Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs (1996) (28)
- Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes (1997) (27)
- Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively (1979) (26)
- Metal–GaAs interaction and contact degradation in microwave MESFETs (1990) (26)
- Electric field distribution in irradiated silicon detectors (2002) (25)
- Negative base current and impact ionization phenomena in AlGaAs/GaAs HBTs (1992) (25)
- Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: Technology and performance (1990) (24)
- Energy resolution in GaAs X- and γ-ray detectors (1998) (24)
- Influence of electron traps on charge-collection efficiency in GaAs radiation detectors (1994) (24)
- Analysis of the active layer in SI GaAs Schottky diodes (1998) (24)
- Measurement of the drift velocity of charge carriers in mercuric iodide (1974) (23)
- Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor (1993) (23)
- Hole and electron drift velocity in CdSe at room temperature (1972) (23)
- Transient and steady state space-charge-limited current in CdTe (1975) (22)
- Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's (2002) (22)
- Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs (2002) (22)
- Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa) (1991) (22)
- An optical-beam-induced-current study of active region and charge collection efficiency of GaAs particle detectors (1995) (22)
- Electroluminescence analysis of HFET's breakdown (1999) (21)
- Effects of water vapor on refractive index profiles in Ti:LiNbO 3 planar waveguides (1986) (20)
- Ti Compound Formation During Ti Diffusion in LiNbO 3 (1982) (20)
- Impact ionization and light emission in InAlAs/InGaAs heterostructure field-effect transistors (1995) (20)
- Some features of thick film technology for the back metallization of solar cells (1984) (20)
- Measurement of the electron ionization coefficient at low electric fields in GaAs-based heterojunction bipolar transistors (1994) (20)
- Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing (1997) (19)
- Some aspects of Ge epitaxial growth by solid solution (1976) (19)
- Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial Growth (1975) (19)
- Performances of SI GaAs detectors fabricated with implanted ohmic contacts (1996) (19)
- Metal‐rich Pd‐silicide formation in thin‐film interactions (1979) (18)
- Gallium arsenide particle detectors: a study of the active region and charge-collection efficiency (1995) (18)
- Anodic gold corrosion in plastic encapsulated devices (1983) (17)
- Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors (2003) (17)
- Performance of SI LEC GaAs detectors at 20°C and −30°C for X- and γ-ray spectroscopy (1996) (17)
- GaAs MESFETs with nonalloyed ohmic contacts: technology and performance (1988) (17)
- Electron-hole pair ionization energy in CdTe between 85 °K and 350 °K (1970) (17)
- Infrared microscopy study of anomalous latchup characteristics due to current redistribution in different parasitic paths (1989) (17)
- Comments, with reply, on 'Impact ionization in GaAs MESFETs' by K. Hui, et al (1991) (16)
- Hot‐electron electroluminescence in AlGaAs/GaAs heterojunction bipolar transistors (1993) (16)
- Frequency dispersion of transconductance: a tool to characterise deep levels in III-V FETs (1992) (15)
- Improved performance of GaAs radiation detectors with low ohmic contacts (1997) (15)
- Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S (1996) (15)
- Detection and localization of gate oxide shorts in MOS transistors by optical-beam-induced current (1991) (15)
- Trap-related effects in AlGaAs/GaAs HEMTs (1991) (15)
- Power GaAs MESFET: Reliability aspects and failure mechanisms (1984) (15)
- Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal (1993) (15)
- Hot-Electron Induced Degradation in AlGaAs/GaAs HEMTs (1992) (15)
- FOXFET biased microstrip detectors: An Investigation of radiation sensitivity (1994) (15)
- Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices (1989) (14)
- Antimony doping of Si layers grown by solid‐phase epitaxy (1976) (14)
- Degradation mechanisms induced by high current density in Al-gate GaAs MESFET's (1987) (14)
- The solid phase epitaxial growth of germanium through palladium germanide layers (1977) (14)
- Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs (1990) (13)
- Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs (1997) (13)
- Thin Pt and Pd silicide Schottky barriers for silicon solar cells (1977) (13)
- Single carrier charge collection in semiconductor nuclear detectors (1977) (13)
- Positive Temperature Dependence of the Electron Impact Ionization Coefficient in In Ga As/InP HBT's (1997) (13)
- INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs (1998) (13)
- Electrical degradation of n-Si/PtSi/(TiW)/Al Schottky contacts induced by thermal treatments (1982) (13)
- Influence of substrate on the performances of semi-insulating GaAs detectors (2000) (13)
- Spin-Orbit Effect in the Si Valence Band (1973) (13)
- CORRELATION BETWEEN IMPACT IONISATION, RECOMBINATION AND VISIBLE LIGHT EMISSION IN GAAS MESFETS (1991) (13)
- Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs (1987) (12)
- A study of the trap influence on the performance of semi-insulating GaAs detectors (1997) (12)
- An SEM based system for a complete characterization of latch-up in CMOS integrated circuits (1986) (12)
- Radiation effects on ac-coupled microstrip silicon detectors (1993) (12)
- Increase in barrier height of Al/n-GaAs contacts induced by high current (1986) (12)
- Time of flight measurement of the differential negative mobility in CdTe (1970) (11)
- Diffusion coefficient of holes in Ge (1978) (11)
- Evaluation of the Ti diffusion process during fabrication of Ti:LiNbO3 optical waveguides (1982) (11)
- Electron drift velocity in high-purity Ge between 8 and 240K (1976) (11)
- Hot carrier induced photon emission in submicron GaAs devices (1991) (11)
- Saturation values of the electron drift velocity in silicon between 300°K and 4.2°K (1970) (11)
- Hole Drift Velocity in Semi‐Insulating CdTe (1971) (11)
- A 250 KHz Piezoelectric Transducer for Operation in Air: Application to Distance and Wind Velocity Measurements (1982) (10)
- Failures induced by electromigration in ECL 100k devices (1984) (10)
- Electron detrapping enhanced by electric field in AlGaAs/GaAs HEMTs (1990) (10)
- Physical investigation of trap-related effects in power HFETs and their reliability implications (2002) (10)
- Reliability aspects of commercial AlGaAs/GaAs HEMTs (1991) (10)
- Hot electron diffusion in CdTe (1975) (10)
- Analysis of uniformity of as prepared and irradiated S.I. GaAs radiation detectors (1997) (10)
- DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues (2005) (10)
- Double-junction effect in proton-irradiated silicon diodes (2002) (9)
- Electromigration effects in power MESFET rectifying and ohmic contacts (1987) (9)
- An Ultrasonic Proximity Sensor Operating in Air (1981) (9)
- Drift velocity and diffusion coefficients from time-of-flight measurements (1985) (9)
- Observation of latch-up time evolution in CMOS IC's by means of SEM stroboscopic voltage contrast techniques (1987) (9)
- Reliability evaluation of plastic packaged devices for long life applications by THB test (1986) (9)
- Impact ionization and light emission in GaAs metal‐semiconductor field effect transistors (1993) (9)
- Reliability problems in TTL-LS devices (1981) (9)
- In‐plane scattering in titanium‐diffused LiNbO3 optical waveguides (1984) (8)
- Experimental results on transient space charge limited currents in p-n junctions (1971) (8)
- Performance and temperature stability of an air mass flowmeter based on a self-heated thermistor (1982) (8)
- Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors (1992) (8)
- Linbo3 Optical Waveguide Fabrication By Ti Indiffusion And Proton Exchange: Process, Performances And Stability (1985) (8)
- Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors (1991) (8)
- Correlation between fabrication processes and thermal distribution in medium power MESFETs (1989) (8)
- Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors (1999) (7)
- Hot electron and DX center insensitivity of Al/sub 0.25/Ga/sub 0.75/As/GaAs HFET's designed for microwave power applications (1998) (7)
- SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range (2003) (7)
- Non-Alloyed Ge/Pd Ohmic Contact for GaAs MESFET's (1988) (7)
- Deep Traps in β‐Rhombohedral Boron (1975) (7)
- Recovery of low temperature electron trapping in AlGaAs/InGaAs PM-HEMTs due to impact-ionization (1995) (7)
- Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors (1993) (7)
- Defective state analysis in silicon carbide (2000) (7)
- Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs (2005) (7)
- Hot Electron Effects on Al 0 . 25 Ga 0 . 75 As / GaAs Power HFET ’ s Under Off-State and On-State Electrical Stress Conditions (2000) (7)
- Kink Effect, Transconductance Increase and Field Enhanced Electron-emission In Algaas/gaas Hemts (1990) (7)
- Breakdown and degradation issues and the choice of a safe load line for power HFET operation (2000) (7)
- The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs (2004) (6)
- Integration of front-end electronics with GaAs pixel detectors: experimental and feasibility analysis (1999) (6)
- Techniques for latch-up analysis in CMOS IC's based on scanning electron microscopy (1988) (6)
- Electric field and plasma effects on proton-irradiated GaAs detector performance (1998) (6)
- Correlation between anomalous latch-up I/V characteristics and observation of current distribution by IR microscopy in CMOS ICs (1988) (6)
- Steplike refractive-index increase induced in planar Ti:LiNbO(3) waveguides diffused in O(2):H(2)O atmosphere. (1988) (6)
- Study of neutron damage in GaAs MESFETs (1997) (6)
- Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs (1999) (6)
- Impact ionization and real-space transfer of minority carriers in charge injection transistors (1994) (6)
- Hot́ hole anisotropic effect in silicon and germanium (1974) (6)
- Poole-Frenkel effect on holes in CdTe (1972) (6)
- DEPENDENCE OF ELECTRON TRAPPING TIME ON THE ELECTRIC FIELD IN SEMI- INSULATING CdTe. (1971) (6)
- Effect of scattering and trapping by ionized centers on the electron drift velocity in CdTe (1973) (5)
- Measurement of the local latch-up sensitivity by means of computer-controller scanning electron microscopy (1988) (5)
- Intervalley diffusion of hot electrons in germanium (1978) (5)
- Trap characterization in buried-gate n-channel 6H-SiC JFETs (2001) (5)
- Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs (1997) (5)
- Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regime (1998) (5)
- Kinetics of the formation of Pd2Ge and Pdge films on Ge (1977) (5)
- A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs (1998) (5)
- Hot electron luminescence in In0.53Ga0.47As transistor channel (1995) (5)
- Proton-Exchanged LiNbO3 Waveguides: Materials Analysis And Optical Characteristics (1984) (5)
- Test fixture for MESFET reliability life tests (1987) (5)
- A new method for measuring the ionized‐impurity concentration in high‐purity materials (1970) (5)
- Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes (1997) (5)
- Planar Waveguides Formation Process in Linbo 3 by Ti IN-Diffusion and H-Li Ion Exchange: A Structural Study (o) (1983) (5)
- Anomalous impact-ionization gate current in high breakdown InP-based HEMT's (1996) (4)
- Dependence of inplane scattering levels in Ti : LiNbO3 optical waveguides on diffusion time (1984) (4)
- Improved Performance of GaAs Radiation Detectors with Low Temperature Ohmic Contacts (1997) (4)
- Effect of ionized centers on the electron drift velocity in CdTe (1975) (4)
- HOT‐HOLE ANISOTROPY IN SILICON (1970) (4)
- Hot-hole diffusivity in Ge at 77 K☆ (1976) (4)
- Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT's (1995) (4)
- Negative differential mobility for electrons in silicon at temperatures below 77°K (1973) (4)
- Time dependence of the induced current in hemispherical semiconductor detectors (1976) (4)
- Failures of AlGaAs/GaAs HEMTs induced by hot electrons (1993) (4)
- Degradation mechanisms induced by temperature in power MESFETs (1985) (4)
- Impurity effect on high-field transport properties of electrons in silicon (1977) (4)
- Impact-ionization effects in advanced Si bipolar transistors (1993) (4)
- Experimental characterization of hot-electron-induced effects and light emission in heterostructure devices (1994) (4)
- Proton induced bulk damage effects in gallium arsenide detectors (1998) (4)
- Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs (2003) (4)
- Degradation of silicon AC-coupled microstrip detectors induced by radiation damage (1992) (4)
- Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs (2001) (4)
- The role of the ohmic contact on the efficiency of gallium arsenide radiation detectors (1997) (4)
- Bipolar Schottky logic device failure modes due to contact metallurgical degradation (1982) (4)
- Proton radiation effects on SI LEC GaAs detector performances (1997) (4)
- Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors (1994) (3)
- Open channel impact-ionization effects in InP-based HEMT's and their dependence on channel quantization and temperature (1996) (3)
- Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help? (2000) (3)
- Invited Paper Proton-Exchange Optical Waveguides On Lithium Niobate: Devices, Characterisation And Future Prospects (1985) (3)
- Noise behavior of semi-insulating GaAs particle detectors before and after proton irradiation (1999) (3)
- Strain Sensitivity of MOSFET Devices (1977) (3)
- Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs (2002) (3)
- Electron-drift-velocity measurements in silicon at high temperatures and their empirical relation to electric field (1974) (3)
- Radial Resistivity Profile in High-Purity Silicon (1970) (3)
- Breakdown and low-temperature anomalous effects in 6H SiC JFETs (1998) (3)
- Degradation of power HFET's under on-state and off-state breakdown conditions (1999) (3)
- Influence of Ohmic Contacts on Semi-Insulating GaAs Detector Performances (1995) (3)
- Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs (2002) (2)
- Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs (1999) (2)
- INTERACTIONS BETWEEN DX CENTERS AND HOT ELECTRONS AND HOLES IN AL0.25GA0.75AS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (1999) (2)
- VLSI reliability: Contributions from a three year national research program (1990) (2)
- Thermal stability of TaSix/n-GaAs metallizations (1989) (2)
- Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs (2003) (2)
- Ti Diffusion Process in LiNbO3 (1984) (2)
- Degradation mechanisms in 2 W MESFETs (1991) (2)
- Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs (2003) (2)
- A New Degradation Mechanism Induced by DX-Centers in AlGaAs/InGaAs PM-HEMT's (1994) (2)
- Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation (1999) (2)
- Influence of charge trapping in gallium arsenide radiation detectors (1998) (2)
- High Energy Photon Emission in GaAs MESFETs and AIGaAs/GaAs HEMTs (1991) (2)
- Erratum to “Epitaxial silicon carbide charge particle detectors” [Nucl. Instr. and Meth. A 437 (1999) 354–358]☆ (2000) (2)
- Hot Electron and DX Center Insensitivity of Al Ga As / GaAs HFET ’ s Designed for Microwave Power Applications (1998) (2)
- Evaluation of current density distribution in MESFET gates (1986) (2)
- Trap influence on the performance of gallium arsenide radiation detectors (1996) (2)
- Analysis of the output signal waveform and performances of semi-insulating GaAs particle detecors (1996) (2)
- GaAs pixel detectors with integrated electronics: experimental basis and feasibility study (1997) (1)
- Low temperature annealing effects on the performance of proton irradiated GaAs detectors (1999) (1)
- Effects of High Current and Temperature in Power MESFET Metallizations (1987) (1)
- Band structure effect on the hole drift velocity in Si at 5K (1972) (1)
- AlGaAs/GaAs HFET power devices for J-band applications: performance dependence on gate recess geometry (1998) (1)
- Negative dielectric relaxation of hot electrons in CdTe (1978) (1)
- Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure Device (1994) (1)
- Improved performance of GaAs radiation detectors (1996) (1)
- Photon radiation damage in high purity silicon and lec si gallium arsenide detectors (1995) (1)
- Bias Dependence of the Depletion Layer Width in Semi-Insulating GaAs by Charge Collection Scanning Microscopy (2021) (1)
- The Effect of Band Warping on the Anisotropy of Hot-Hole Drift Velocity in Ge (1974) (1)
- Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs (2001) (1)
- Ohmic mobility of electrons in high purity silicon between 77 and 300 0K (1970) (1)
- Hot Electron Induced Impact Ionization and Light Emission in GaAs Based MESFETs, HEMTs, PM-HEMTs and HBTs (1993) (1)
- Analytical techniques for localization and sensitivity analysis of latch-up in CMOS IC's (1989) (1)
- Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in hydrogen gas (1998) (1)
- Reliability Issue in Compound Semiconductor Heterojunction Devices (1999) (1)
- Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs (2001) (0)
- Kinetics of formation of deep traps in proton irradiated semi-insulating GaAs (2017) (0)
- Proton irradiation effects on the electric field behavior in particle detectors (2000) (0)
- Study of Neutron Damage in GaAs MESFETs-Nuclear Science, IEEE Transactions on (2004) (0)
- SEM Studies of Time Evolution and Sensitivity of Latch-up in CMOS ICs (1986) (0)
- Results from electrical caracterization and reliability tests of GaAs/GaAlAs HEMT's (1990) (0)
- An Automated Thermocouple Calibration System (1992) (0)
- Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs (2001) (0)
- SI LEC GaAs nuclear detectors: characterization, performance and applications (1996) (0)
- Impact Ionization Effect in Complementary CHarge Injection Transistor (1993) (0)
- Off-State Breakdown in GaAs Power HFETs (1999) (0)
- Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's (1994) (0)
- "Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics" (1981) (0)
- Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch-stop layer (1998) (0)
- Numerical analysis of hot electron degradation modes in power HFETs (2002) (0)
- Surface-related kink effect in AlGaAs/GaAs power HFETs (2001) (0)
- Experimental and numerical study of the hot electron degradation of power AlGaAs/GaAs HFETs (1999) (0)
- Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation (2003) (0)
- Defective states in semi-insulating gallium arsenide substrates (1997) (0)
- Neutron induced damage in GaAs MESFETs (1996) (0)
- Thermally induced parasitic ungated FET in power MESFETs (1990) (0)
- Trap-related effects in 6H-SiC buried-gate JFETs (2001) (0)
- MEASUREMENTSOF THE AVERAGEENERGYPER ELECTRON-HOLE PAIR GENERATIONIN SILICONBETWprEEN 5-32O0K( (1972) (0)
- Hot-carrier-induced radiation emission in AlGaAs/GaAs high electron mobility transistors and GaAs MESFETs (1990) (0)
- KINETICS OF THE INITIAL STAGE OF SILICON TRANSPORT THROUGH PALLADIUM SILICIDE FOR EPITAXIAL GROWTH (1976) (0)
- Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design (2001) (0)
- Measurement of Intervalley Repopulation Time in Silicon (1974) (0)
- Development of nuclear emulsions with View the 1 µ m source spatial resolution for the AEgIS experiment (2021) (0)
- Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-based Heterojunction Bipolar Transistors (1996) (0)
- Failure modes induced in TTL-LS bipolar logics by negative inputs (1982) (0)
- Experimental Study of Deep Levels in MESFETs (1996) (0)
- Analysis of d.c. and a.c. anomalous latch-up effects in commercial CMOS integrated circuits (1991) (0)
- Performance and reliability of GaAs based power HFETs (1997) (0)
- Three-terminal off-state breakdown in AlGaAs/GaAs power HFETs: a temperature-dependent analysis of the gate reverse current (1999) (0)
- Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs (1999) (0)
- High field and low temperature behaviour of Lely-grown 6H SiC buried gate JFETs (1999) (0)
- Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET's (2003) (0)
- Characterization of Anomalous Latch-up Effects by Means of Infrared Microscopy and Spice Simulation (1988) (0)
- Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs (2004) (0)
- Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes (1998) (0)
- Performances of SI GaAs detectors fabricated with a new technology (1995) (0)
- Spectroscopy of defects induced by ohmic contact preparation in LEC GaAs particle detectors (1996) (0)
- Hot-electron-induced light emission and impact ionization in GaAs-based devices (1993) (0)
- Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations (2002) (0)
- X-ray study of Ti diffused LiNbO3 crystal perfection (1984) (0)
- Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors (1989) (0)
- Defect Generation by Proton Irradiation of Semi-Insulating Lec GaAs (1998) (0)
- Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs (1999) (0)
- Electroluminescence and gate current components of InAlAs/InGaAs HEFT's (1994) (0)
- Correlation between permanent degradation of GaAs-based HEMT's and current DLTS spectra (1996) (0)
- Effects Of Water Vapour On TiO2,LiNb3O8 AND (TixNb1_x)O2 Compound Kinetics During Ti:LiNbO3 Waveguide Fabrication (1984) (0)
- Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs (2001) (0)
- Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s (1998) (0)
- Gallium Arsenide charged particle detectors: deep levels effects (1994) (0)
- Semiconductor materials for photovoltaic conversion (1977) (0)
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What Schools Are Affiliated With Claudio Canali?
Claudio Canali is affiliated with the following schools:
