Clarence R. Crowell
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Physics
Clarence R. Crowell's Degrees
- PhD Physics Stanford University
- Masters Physics Stanford University
- Bachelors Physics Stanford University
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(Suggest an Edit or Addition)Clarence R. Crowell's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Current transport in metal-semiconductor barriers (1966) (657)
- Temperature dependence of avalanche multiplication in semiconductors (1966) (427)
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers (1969) (384)
- The Richardson constant for thermionic emission in Schottky barrier diodes (1965) (343)
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors (1972) (238)
- Threshold energy effect on avalanche breakdown voltage in semiconductor junctions (1975) (199)
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers (1964) (191)
- Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement (1974) (180)
- Ionization coefficients in semiconductors: A nonlocalized property (1974) (177)
- Attenuation Length Measurements of Hot Electrons in Metal Films (1962) (176)
- Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe (1976) (154)
- Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors (1972) (136)
- Erratum: Capacitance energy level spectroscopy of deep‐lying semiconductor impurities using Schottky barriers (1970) (131)
- Recombination velocity effects on current diffusion and imref in schottky barriers (1971) (117)
- Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts (1970) (106)
- The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling (1990) (100)
- Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS) (1981) (96)
- Application of Auger electron spectroscopy to studies of the silicon/silicide interface (1978) (94)
- Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces (1965) (91)
- The physical significance of the T0 anomalies in Schottky barriers (1977) (89)
- Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures (1966) (81)
- Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes (1969) (78)
- Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers (1969) (74)
- Hot-Electron Transport in Semiconductor-Metal-Semiconductor Structures (1966) (60)
- Impact ionization by electrons and holes in InP (1980) (58)
- EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES (1964) (56)
- Electron-optical-phonon scattering in the emitter and collector barriers of semiconductor-metal-semiconductor structures (1965) (54)
- Ballistic Mean Free Path Measurements of Hot Electrons in Au Films (1965) (53)
- Mean Free Path of Photoexcited Electrons in Au (1962) (52)
- Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers (1973) (48)
- A simplified self-consistent model for image force and interface charge in Schottky barriers (1974) (48)
- Characterization of multiple deep level systems in semiconductor junctions by admittance measurements (1974) (40)
- Deep level impurity effects on the frequency dependence of Schottky barrier capacitance (1972) (32)
- RANGE OF PHOTOEXCITED HOLES IN Au (1962) (32)
- Parasitic source and drain resistance in high-electron-mobility transistors (1985) (31)
- Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach (1979) (26)
- Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height (1975) (23)
- Analysis of the Linear RF Mass Spectrometer (1953) (20)
- Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors (1990) (20)
- Electron-phonon collector backscattering in hot electron transistors (1965) (20)
- Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structures (1990) (20)
- THERMIONIC‐FIELD RESISTANCE MAXIMA IN METAL‐SEMICONDUCTOR (SCHOTTKY) BARRIERS (1969) (18)
- Temperature Dependence of the Work Function of Silver, Sodium, and Potassium (1959) (17)
- Temperature Dependence of the Work Function of Single-Crystal Faces of Copper (1964) (17)
- Photoelectron injection at metal-semiconductor interfaces (1980) (17)
- PRESSURE SENSITIVITY OF GOLD‐POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES (1967) (16)
- Effects and Characterization of Ion Implantation Enhanced GaAs Schottky Barriers (1987) (16)
- Temperature gradient effects in electromigration using an extended transition probability model and temperature gradient free tests. I. Transition probability model (1999) (16)
- Determination of hafnium‐p‐type silicon Schottky barrier height (1974) (14)
- A convenient operational equivalent to the fowler photothreshold plot (1972) (14)
- INTERPRETATION OF TUNNEL EMISSION AND CAPACITANCE MEASUREMENTS IN THE PRESENCE OF DIELECTRIC FILM‐THICKNESS FLUCTUATIONS (1966) (13)
- Effective threshold energy for pair production in nonpolar semiconductors (1976) (10)
- Current transport over parabolic potential barriers in semiconductor devices (1988) (8)
- Large-signal transient analysis and effects of lateral charge spreading in television camera tubes (1971) (5)
- SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures (1991) (5)
- Theoretical Basis for Measuring the Saturation Emission of Highly Emitting Cathodes under Space‐Charge‐Limited Conditions (1955) (5)
- Variable-frequency automatic capacitance/conductance system for impurity profile and deep level determination (1976) (5)
- Optimization of HEMTs in ultra high speed GaAs integrated circuits (1983) (5)
- Effect of minority‐carrier injection on Schottky‐barrier heights that approach the semiconductor band gap (1976) (4)
- Relationship between capture coefficient and capture cross-section: Average velocity of a maxwellian distribution of carriers in a medium with an anisotropic effective mass tensor (1976) (4)
- Silicon phototransistor vidicon (1971) (2)
- Experimental study of hot-electron transport in semiconductor-metal-semiconductor structures (1965) (2)
- Metal-semiconductor interfaces (1969) (2)
- Attenuation length measurements of hot electrons and hot holes in metal films (1962) (1)
- IIIA-6 an analysis of low source resistance HEMT with multiple cap layer (1984) (1)
- Abstract: Photoelectron injection at metal–semiconductor interfaces (1977) (1)
- Effect of the Cathode Work Function on the Space‐Charge‐Limited Characteristics of Plane Diodes (1956) (1)
- Theory of current transport in hot-electron transistors (1965) (1)
- Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and f/sub T/ (1989) (1)
- Temperature dependence of resistance in Black's equation and in calibration for SWEAT and NIST structures: the parameter T/sub EO/ (1999) (0)
- Profile Selection in Linearly Graded Heteroj unction Bipolar Transistors (1990) (0)
- Non-Localized Impact Ionization in Semi-Conductors. (1979) (0)
- Characterization of multiple deep level systems in semiconductor junctions by capacitance measurements (1972) (0)
- The Temperature Dependence of the Work Functions of the Monovalent Noble Metals. (1955) (0)
- Impact Ionization and Hot Carrier Transport in Semiconductors. (1981) (0)
- Avalanche Breakdown of Highly Doped Passivated Si Schottky Barriers (1973) (0)
- Characterization of Enhanced Barrier Schottky Diodes Impurity Profiling in the Punch‐Through Region (1988) (0)
- Research in Electronics - JSEP (Joint Services Electronics Program) (1982) (0)
- Effects and Characterization of Ion Implantation Enhanced GaAs Schottky Barriers. (1987) (0)
- Abstract: Charge storage and charge release modes for DLTS studies of MIS interface states and deep level impurities (1979) (0)
- Electrical characterization of deep level systems in semiconductor junctions by admittance measurements (1975) (0)
- Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977 (1979) (0)
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