Clarence R. Crowell

Clarence R. Crowell's AcademicInfluence.com Rankings

Clarence R. Crowell

Physics

#7624

World Rank

#9669

Historical Rank

physics Degrees

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Physics

Clarence R. Crowell's Degrees

PhD Physics Stanford University
Masters Physics Stanford University
Bachelors Physics Stanford University

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Clarence R. Crowell's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Current transport in metal-semiconductor barriers (1966) (657)
Temperature dependence of avalanche multiplication in semiconductors (1966) (427)
Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers (1969) (384)
The Richardson constant for thermionic emission in Schottky barrier diodes (1965) (343)
Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors (1972) (238)
Threshold energy effect on avalanche breakdown voltage in semiconductor junctions (1975) (199)
Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers (1964) (191)
Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement (1974) (180)
Ionization coefficients in semiconductors: A nonlocalized property (1974) (177)
Attenuation Length Measurements of Hot Electrons in Metal Films (1962) (176)
Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe (1976) (154)
Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors (1972) (136)
Erratum: Capacitance energy level spectroscopy of deep‐lying semiconductor impurities using Schottky barriers (1970) (131)
Recombination velocity effects on current diffusion and imref in schottky barriers (1971) (117)
Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts (1970) (106)
The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling (1990) (100)
Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS) (1981) (96)
Application of Auger electron spectroscopy to studies of the silicon/silicide interface (1978) (94)
Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces (1965) (91)
The physical significance of the T0 anomalies in Schottky barriers (1977) (89)
Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures (1966) (81)
Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes (1969) (78)
Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers (1969) (74)
Hot-Electron Transport in Semiconductor-Metal-Semiconductor Structures (1966) (60)
Impact ionization by electrons and holes in InP (1980) (58)
EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES (1964) (56)
Electron-optical-phonon scattering in the emitter and collector barriers of semiconductor-metal-semiconductor structures (1965) (54)
Ballistic Mean Free Path Measurements of Hot Electrons in Au Films (1965) (53)
Mean Free Path of Photoexcited Electrons in Au (1962) (52)
Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers (1973) (48)
A simplified self-consistent model for image force and interface charge in Schottky barriers (1974) (48)
Characterization of multiple deep level systems in semiconductor junctions by admittance measurements (1974) (40)
Deep level impurity effects on the frequency dependence of Schottky barrier capacitance (1972) (32)
RANGE OF PHOTOEXCITED HOLES IN Au (1962) (32)
Parasitic source and drain resistance in high-electron-mobility transistors (1985) (31)
Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach (1979) (26)
Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height (1975) (23)
Analysis of the Linear RF Mass Spectrometer (1953) (20)
Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors (1990) (20)
Electron-phonon collector backscattering in hot electron transistors (1965) (20)
Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structures (1990) (20)
THERMIONIC‐FIELD RESISTANCE MAXIMA IN METAL‐SEMICONDUCTOR (SCHOTTKY) BARRIERS (1969) (18)
Temperature Dependence of the Work Function of Silver, Sodium, and Potassium (1959) (17)
Temperature Dependence of the Work Function of Single-Crystal Faces of Copper (1964) (17)
Photoelectron injection at metal-semiconductor interfaces (1980) (17)
PRESSURE SENSITIVITY OF GOLD‐POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES (1967) (16)
Effects and Characterization of Ion Implantation Enhanced GaAs Schottky Barriers (1987) (16)
Temperature gradient effects in electromigration using an extended transition probability model and temperature gradient free tests. I. Transition probability model (1999) (16)
Determination of hafnium‐p‐type silicon Schottky barrier height (1974) (14)
A convenient operational equivalent to the fowler photothreshold plot (1972) (14)
INTERPRETATION OF TUNNEL EMISSION AND CAPACITANCE MEASUREMENTS IN THE PRESENCE OF DIELECTRIC FILM‐THICKNESS FLUCTUATIONS (1966) (13)
Effective threshold energy for pair production in nonpolar semiconductors (1976) (10)
Current transport over parabolic potential barriers in semiconductor devices (1988) (8)
Large-signal transient analysis and effects of lateral charge spreading in television camera tubes (1971) (5)
SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures (1991) (5)
Theoretical Basis for Measuring the Saturation Emission of Highly Emitting Cathodes under Space‐Charge‐Limited Conditions (1955) (5)
Variable-frequency automatic capacitance/conductance system for impurity profile and deep level determination (1976) (5)
Optimization of HEMTs in ultra high speed GaAs integrated circuits (1983) (5)
Effect of minority‐carrier injection on Schottky‐barrier heights that approach the semiconductor band gap (1976) (4)
Relationship between capture coefficient and capture cross-section: Average velocity of a maxwellian distribution of carriers in a medium with an anisotropic effective mass tensor (1976) (4)
Silicon phototransistor vidicon (1971) (2)
Experimental study of hot-electron transport in semiconductor-metal-semiconductor structures (1965) (2)
Metal-semiconductor interfaces (1969) (2)
Attenuation length measurements of hot electrons and hot holes in metal films (1962) (1)
IIIA-6 an analysis of low source resistance HEMT with multiple cap layer (1984) (1)
Abstract: Photoelectron injection at metal–semiconductor interfaces (1977) (1)
Effect of the Cathode Work Function on the Space‐Charge‐Limited Characteristics of Plane Diodes (1956) (1)
Theory of current transport in hot-electron transistors (1965) (1)
Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and f/sub T/ (1989) (1)
Temperature dependence of resistance in Black's equation and in calibration for SWEAT and NIST structures: the parameter T/sub EO/ (1999) (0)
Profile Selection in Linearly Graded Heteroj unction Bipolar Transistors (1990) (0)
Non-Localized Impact Ionization in Semi-Conductors. (1979) (0)
Characterization of multiple deep level systems in semiconductor junctions by capacitance measurements (1972) (0)
The Temperature Dependence of the Work Functions of the Monovalent Noble Metals. (1955) (0)
Impact Ionization and Hot Carrier Transport in Semiconductors. (1981) (0)
Avalanche Breakdown of Highly Doped Passivated Si Schottky Barriers (1973) (0)
Characterization of Enhanced Barrier Schottky Diodes Impurity Profiling in the Punch‐Through Region (1988) (0)
Research in Electronics - JSEP (Joint Services Electronics Program) (1982) (0)
Effects and Characterization of Ion Implantation Enhanced GaAs Schottky Barriers. (1987) (0)
Abstract: Charge storage and charge release modes for DLTS studies of MIS interface states and deep level impurities (1979) (0)
Electrical characterization of deep level systems in semiconductor junctions by admittance measurements (1975) (0)
Non-localized impact ionization in semiconductors. Final report, 1 August 1974-31 July 1977 (1979) (0)

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What Schools Are Affiliated With Clarence R. Crowell?

Clarence R. Crowell is affiliated with the following schools:

University of Southern California