Carleton Hoover Seager
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Chemistry Physics
Carleton Hoover Seager's Degrees
- PhD Materials Science and Engineering Stanford University
- Masters Materials Science and Engineering Stanford University
Why Is Carleton Hoover Seager Influential?
(Suggest an Edit or Addition)Carleton Hoover Seager's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Mechanisms behind green photoluminescence in ZnO phosphor powders (1996) (3321)
- Correlation between photoluminescence and oxygen vacancies in ZnO phosphors (1996) (1825)
- Percolation and conductivity: A computer study. II (1974) (844)
- The dc voltage dependence of semiconductor grain‐boundary resistance (1979) (416)
- Electrical properties and conduction mechanisms of Ru‐based thick‐film (cermet) resistors (1977) (261)
- Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon (1978) (247)
- Passivation of grain boundaries in polycrystalline silicon (1979) (244)
- Role of carbon in GaN (2002) (215)
- Green photoluminescence efficiency and free-carrier density in ZnO phosphor powders prepared by spray pyrolysis (1997) (202)
- Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen (2000) (153)
- Small-Polaron Hopping Motion in Some Chalcogenide Glasses (1972) (151)
- Grain boundary recombination: Theory and experiment in silicon (1981) (143)
- Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO (2003) (137)
- Grain boundary states and varistor behavior in silicon bicrystals (1979) (126)
- Studies of the hydrogen passivation of silicon grain boundaries (1981) (108)
- Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process (1983) (99)
- Grain Boundaries in Polycrystalline Silicon (1985) (98)
- The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing (1987) (96)
- Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy (2002) (87)
- Real‐time observations of hydrogen drift and diffusion in silicon (1988) (81)
- Electrical Transport and Structural Properties of Bulk As-Te-I, As-Te-Ge, and As-Te Chalcogenide Glasses (1973) (76)
- Improvement of polycrystalline silicon solar cells with grain‐boundary hydrogenation techniques (1980) (74)
- IMPACT OF PB DOPING ON THE OPTICAL AND ELECTRONIC PROPERTIES OF ZNO POWDERS (1995) (74)
- Direct measurement of electron emission from defect states at silicon grain boundaries (1979) (65)
- Equilibrium state of hydrogen in gallium nitride: Theory and experiment (2000) (64)
- Electron tunneling through GaAs grain boundaries (1982) (64)
- The determination of grain‐boundary recombination rates by scanned spot excitation methods (1982) (62)
- Charge trapping and device behavior in ferroelectric memories (1996) (62)
- DC electronic transport in binary arsenic chalcogenide glasses (1975) (59)
- Drift, diffusion, and trapping of hydrogen in p-type GaN (2002) (56)
- Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment (2001) (56)
- Binding of cobalt and iron to cavities in silicon (1996) (53)
- Anomalous low-frequency grain-boundary capacitance in silicon (1980) (52)
- Effects of clustering on the properties of defects in neutron irradiated silicon (2007) (51)
- Energy transfer and relaxation in europium-activated Y2O3 after excitation by ultraviolet photons (2002) (50)
- Passivation of grain boundaries in silicon (1982) (49)
- Loss mechanisms in polyimide waveguides (1994) (46)
- In situ measurements of hydrogen motion and bonding in silicon (1990) (45)
- Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films (1991) (44)
- Hydrogen configurations, formation energies, and migration barriers in GaN (2003) (42)
- Defect-driven gain bistability in neutron damaged, silicon bipolar transistors (2007) (35)
- Crosslinked polyimide electro‐optic materials (1995) (35)
- Luminescence in GaN co-doped with carbon and silicon (2004) (33)
- A bistable divacancylike defect in silicon damage cascades (2008) (33)
- Electron-beam-induced charging of phosphors for low voltage display applications (1997) (32)
- Electron-beam dissociation of the MgH complex in p-type GaN (2002) (31)
- Percolative aspects of diffusion in binary alloys (1974) (30)
- Accurate measurements of thermal radiation from a tungsten photonic lattice (2005) (29)
- Chemical and electrical properties of cavities in silicon and germanium (1995) (28)
- Optical absorption in ion-implanted lead lanthanum zirconate titanate ceramics (1984) (26)
- Optically induced absorption and paramagnetism in lead lanthanum zirconate titanate ceramics (1992) (26)
- Electronic control of hydrogen debonding from phosphorus in silicon - is there an acceptor state of interstitial hydrogen? (1990) (25)
- Defect annealing in neutron and ion damaged silicon: Influence of defect clusters and doping (2010) (23)
- Two-step debonding of hydrogen from boron acceptors in silicon (1991) (22)
- Cathodoluminescence, reflectivity changes, and accumulation of graphitic carbon during electron beam aging of phosphors (1997) (22)
- Isotope effects on the rate of electron-beam dissociation of Mg-H complexes in GaN (2002) (22)
- Photodarkening and bleaching in amorphous silicon nitride (1990) (21)
- Creation and Properties of Nitrogen Dangling Bond Defects in Silicon Nitride Thin Films (1996) (21)
- Metal gettering by boron-silicide precipitates in boron-implanted silicon (1997) (21)
- Photothermal deflection spectroscopy of conjugated polymers (1992) (20)
- Local Ce environments and their effects on optical properties of SrS phosphors (1996) (20)
- Mechanisms for the operation of thin film transistors on ferroelectrics (1993) (18)
- Dangling bonds and the Urbach tail in silicon (1985) (15)
- Annealing neutron damaged silicon bipolar transistors: Relating gain degradation to specific lattice defects (2010) (15)
- Electronic transport measurements in the AsTeI chalcogenide glasses (1972) (15)
- Transformation kinetics of an intrinsic bistable defect in damaged silicon (2012) (14)
- Time‐resolved degenerate four‐wave mixing studies of solid‐state poly(p‐phenylene) oligomers (1994) (14)
- Infrared and transmission electron microscopy studies of ion-implanted H in GaN (1999) (14)
- Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices (1997) (14)
- Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors (1997) (14)
- The absence of a measurable hall effect in the superionic conductor RbAg4I5 (1977) (14)
- Hole trapping in oxides grown by rapid thermal processing (1988) (13)
- Hydrogen isotope exchange and the surface barrier in p-type gallium nitride (2004) (13)
- Grain boundaries in semiconductors : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A. (1982) (12)
- Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films (1995) (12)
- In‐gap optical absorption of amorphous Si3N4 (1984) (12)
- Reversible changes of the charge state of donor/hydrogen complexes initiated by hole capture in silicon (1993) (12)
- Lattice location of hydrogen in Mg doped GaN (2001) (12)
- HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON PHOTOVOLTAIC CELLS (1982) (11)
- Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon (1996) (11)
- Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon (1982) (11)
- Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides (1983) (11)
- Bistability of donor‐hydrogen complexes in silicon: A mechanism for debonding (1991) (10)
- Field dependent emission rates in radiation damaged GaAs (2014) (10)
- Ionoluminescence decay measured with single ions (2002) (9)
- Influence of ambient on hydrogen release from p-type gallium nitride (2004) (9)
- Swelling of plasma‐polymerized tetrafluoroethylene films (1991) (9)
- INFLUENCE OF VACUUM ENVIRONMENT ON THE AGING OF PHOSPHORS AT LOW ELECTRON ENERGIES (1999) (9)
- Materials Characterization of Nondestructive Readout Nonvolatile Memory Devices (1993) (9)
- Atomic level stress and light emission of Ce activated SrS thin films (1997) (9)
- Changes in silicon samples bombarded by 900–2300 eV hydrogen ions (1984) (9)
- Chromaticity and electroluminescent efficiency of atomic layer epitaxy SrS:Ce thin films (1998) (9)
- Transport in Microscopically Inhomogeneous Materials (1976) (8)
- Photodarkening and paramagnetism in ultraviolet exposed lead lanthanum zirconate ceramics (1993) (8)
- Electron paramagnetic resonance and capacitance‐voltage studies of ultraviolet irradiated Si‐SiO2 interfaces (1990) (7)
- Optical Characterization of Si1-xCx/Si ( 0≤x≤0.014) Semiconductor Alloys (1995) (7)
- Electronic conduction in Zr-doped TiO2 (1976) (7)
- Electric field control of cathodoluminescence from phosphors excited at low electron energies (1998) (7)
- Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs (2010) (7)
- Conversion and equilibrium between F- and F2-centers in X-irradiated KCl. I. Slow warm up experiments (1972) (7)
- Ion-Beam-Source Studies of Hydrogen Motion and Trapping in Silicon (1988) (7)
- Electronic Hall Mobility in the Alkaline-Earth Fluorides (1971) (7)
- Interaction of defects and H in proton-irradiated GaN(Mg, H) (2005) (7)
- Mechanisms affecting emission in rare-earth-activated phosphors (2000) (6)
- Chapter 2 Hydrogenation Methods (1991) (6)
- The role of activator–activator interactions in reducing in low-voltage-cathodoluminescence efficiency in Eu and Tb doped phosphors (2000) (6)
- Interactions of excited activators in rare earth and transition metal doped phosphors and their role in low energy cathodoluminescence (2002) (6)
- The Electronic Properties Of Semiconductor Grain Boundaries (1981) (6)
- High-Temperature Measurements of the Electron Hall Mobility in the Alkali Halides (1970) (6)
- Reduction of intensity from coatings on cathodoluminescent phosphors: MgO or Al2O3 on Y2O3:Eu or Y2SiO5:Tb (2002) (5)
- Scanning cathodoluminescence as a probe of surface recombination in phosphors excited at low electron energies (1998) (5)
- Optical absorption and dangling bonds in damaged silicon (1985) (5)
- Electronic properties of silicon grain boundaries (1980) (5)
- Effects of defect clustering in neutron irradiated silicon (2007) (5)
- A Study of Co and Mn in ZnO Varistors (1985) (5)
- Polyimide-based electro-optic materials (1993) (5)
- Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors (2015) (4)
- Spin-dependent transport at silicon grain boundaries (1992) (4)
- Barrier heights and passivation of grain boundaries in polycrystalline silicon (1980) (4)
- Effects of ion beam hydrogenation on silicon solar cell structures (1982) (4)
- Nanocrystalline phosphors (1998) (4)
- Nature of the green luminescent center in zinc oxide (1996) (4)
- Ion-implanted hydrogen in gallium nitride (1998) (3)
- Surface and Bulk Properties which Influence Ion-Beam Hydrogenation of Silicon (1989) (3)
- Electrical properties of DuPont Birox and Cermalloy thick film resistors. I (1977) (3)
- Analysis of Real-Time Hydrogenation data from P and N-Type Silicon (1989) (3)
- Electrical conduction mechanisms in thick film resistors (1976) (3)
- Impurity conduction in manganese-doped gallium arsenide (1974) (3)
- Long-lifetime silicon photoconductive semiconductor switches (1993) (3)
- Conversion and equilibrium between F- and F2-centers in X-irradiated KCl. II. Dynamic equilibrium experiments (1972) (3)
- Comment on: Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light (2003) (2)
- Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A final research report covering work completed from February-December 1979 (1980) (2)
- Final report on grand challenge LDRD project : a revolution in lighting : building the science and technology base for ultra-efficient solid-state lighting. (2004) (2)
- Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance (1992) (2)
- Surface charging of phosphors and its effects on cathodoluminescence at low electron energies (1997) (2)
- The Characterization of Silicon Damaged by Low Energy Argon Ion Etching (1986) (2)
- The Role of Nitrogen-Induced Localization and Defects in InGaAsN (2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition (2001) (2)
- Spin dependent photocurrents in ribbon solar cells (1992) (2)
- Polyimide-based electrooptic materials (1993) (2)
- Ion beam induced luminescence of doped yttrium compounds (2004) (2)
- Plasma modification of grain boundaries in polycrystalline silicon (1981) (1)
- Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment (2000) (1)
- Direct measurement of majority-carrier quasi-Fermi levels in Schottky barrier and metal-insulator-semiconductor diodes (1987) (1)
- Radiation response of thin oxides grown by rapid thermal oxidation and rapid thermal annealing techniques (1987) (1)
- Physical and electrical properties of oxides grown on carbon-implanted silicon (1989) (1)
- Hall mobility of holes in α-sulfur (1971) (1)
- Equilibrium properties of thin‐oxide metal‐oxide‐semiconductor diodes (1986) (1)
- Observations of damage and transport of hydrogen in ion bombarded polycrystalline silicon (1984) (1)
- Charge state control of hydrogenation in silicon (1996) (1)
- Characterization of thermally stable dye-doped polyimide based electrooptic materials (1993) (1)
- Exciton fusion and charge-carrier generation in poly(di-n-hexylsilane) (1992) (1)
- Gain and Defect Bi-Stability in Radiation Damaged Silicon Bipolar Transistors. (2007) (1)
- Dangling bonds and sub-gap optical absorption in silicon (1985) (1)
- Understanding the transport properties of silicon grain boundaries and how they relate to I.C. applications of polysilicon (1986) (0)
- Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN (1999) (0)
- Effect of UV light on IR absorption in chemically vapor deposited a-SiNx: H films (1992) (0)
- The role of hydrogen in wurtzite GaN (2003) (0)
- Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A research report covering work completed from February 1981 to January 1982 (1982) (0)
- Role of defects in III-nitride based electronics (2000) (0)
- Fundamental Efficiency Limitations for Low Electron Energy Cathololuminescence (2000) (0)
- The Behavior of Ion-Implanted Hydrogen in Gallium Nitride (1999) (0)
- EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations (1991) (0)
- Electrical properties of DuPont Birox and Cermalloy thick film resistors. 3: Electric field effects (1976) (0)
- Band gap measurement of Si{sub 1-x}C{sub x}/Si (0{le}x{le}0.014) alloys using photoluminescence and spectroscopic ellipsometry (1995) (0)
- The Electrical Behavior of Grain Boundaries in Silicon (1982) (0)
- Optical Characterization of Si1-xCx/Si (0.LEQ.x.LEQ.0.014) Semiconductor Alloys. (1995) (0)
- Polyimide Optical Waveguides (1993) (0)
- Guest-Host Crosslinked Polyimides for Integrated Optics (1995) (0)
- J ; ‘ 1 Fundamental Efficiency Limitations for Low Electron Energy Cathodoluminescence (2000) (0)
- PECVD of amorphous nickel--phosphorus films (1988) (0)
- Electrical conduction mechanisms in thick film resistors. [Ruthenium-based resistors] (1976) (0)
- Fundamental Studies of Grain Boundary DE 83 oooso 3 Passivation in Polycrystalline Silicon With Application to Improved (2013) (0)
- a Study of F to M Center Conversion and Equilibrium in X-Irradiated Potassium-Chloride (1969) (0)
- Amoco Research Center, Amoco Chemical Co., Naperville, IL 60566 (2017) (0)
- Simulation of H behavior in p-GaN(Mg) at elevated temperatures (1999) (0)
- Thermal stability of fluorinated SiO{sub 2} films: Effects of hydration and film-substrate interaction (1996) (0)
- Long Range Coulomb Effects on Hydrogen Debonding from Boron Acceptors in Silicon (1990) (0)
- Life Testing and Reliability Behavior of Gan/Ingan/Aigan Light-Emitting Diodes (1998) (0)
- C 0 Nr '-Y % o % ~ ~-- Ion-implanted hydrogen in gallium nitride 406 (2008) (0)
- CHAPTER 18 – THE OPTIMIZATION OF SOLAR CONVERSION DEVICES* (1980) (0)
- The structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon (1993) (0)
- Grain boundary superconductivity in the YBaCuO system. [Y/sub 1. 2/Ba/sub 0. 8/CuO/sub 4/] (1987) (0)
- Evidence of Electron Localization in InGaAsN (1--2% N) Alloys (2000) (0)
- Characterization of crosslinked electro-optic polyimides (1994) (0)
- Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers. (2005) (0)
- Minority carrier induced debonding of hydrogen from shallow donors in silicon (1990) (0)
- Creation of Interface States at the Silicon/Silicon Dioxide Interface by UV Light Without Hole Trapping (1989) (0)
- Measurements of photo-induced changes in conjugated polymers (1991) (0)
- Charge Trapping Centers in Ferroelectric Ceramics (1992) (0)
- ac and dc electrical characteristics of Polythermaleze-200 polyimide wire insulation including effects of potting in Epon-828 (1973) (0)
- Erratum: Grain boundary states and varistor behavior in silicon bicrystals (1980) (0)
- Hydrogen motion and bonding in silicon grain boundaries (1983) (0)
- Optical Properties of Diamond-Like Carbon Films Deposited by Laser Ablation (1995) (0)
- Subgap absorption in conjugated polymers (1991) (0)
- Effects if X Irradiation and High Field Electron Injection on the Properties of Rapid Thermal Oxides (1988) (0)
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