A. Catrina Coleman
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Scottish electrical engineer
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A. Catrina Coleman's Degrees
- PhD Electrical Engineering University of Strathclyde
Why Is A. Catrina Coleman Influential?
(Suggest an Edit or Addition)According to Wikipedia, Ann Catrina Coleman FIEEE FOSA is a Scottish electrical engineer and professor at the University of Texas at Dallas specialising in semiconductor lasers. Currently she is an Associate Vice President of the Photonics Society. Other professional activities include Associate Editor IEEE Journal of Quantum Electronics , Elected Member of the IEEE LEOS Board of Governors , General Co-chair of Conference on Lasers and Electro-Optics : Science and Innovations , Program Co-chair of Conference on Lasers and Electro-Optics : Science and Innovations .
A. Catrina Coleman's Published Works
Published Works
- Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion (1997) (156)
- A universal damage induced technique for quantum well intermixing (1998) (127)
- Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing (1997) (106)
- Monolithic integration via a universal damage enhanced quantum-well intermixing technique (1998) (102)
- Quasi phase matching in GaAs--AlAs superlattice waveguides through bandgap tuning by use of quantum-well intermixing. (2000) (72)
- Subpicosecond Pulse Generation at Quasi-40-GHz Using a Passively Mode-Locked AlGaInAs–InP 1.55- $\mu{\hbox {m}}$ Strained Quantum-Well Laser (2009) (65)
- Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing (2000) (63)
- Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures (1992) (60)
- Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps (1992) (55)
- Improved catastrophic optical damage level from laser with nonabsorbing mirrors (2002) (53)
- Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers. (2011) (47)
- Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique (1995) (46)
- Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer (1997) (44)
- High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering (1994) (42)
- Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum-well intermixing (1997) (42)
- Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers (1999) (40)
- Spectral Dynamical Behavior in Passively Mode-Locked Semiconductor Lasers (2011) (40)
- CW and mode-locked integrated extended cavity lasers fabricated using impurity free vacancy disordering (1997) (39)
- Control of silica cap properties by oxygen plasma treatment for single-cap selective impurity free vacancy disordering (1999) (38)
- Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing (2001) (37)
- Quantum well intermixing in material systems for 1.5 μm (invited) (1998) (36)
- Applications of neutral impurity disordering in fabricating low-loss optical waveguides and integrated waveguide devices (1991) (34)
- Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity-induced disordering (1989) (34)
- Quantum well intermixing with high spatial selectivity using a pulsed laser technique (1995) (32)
- Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe (1994) (31)
- Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing (1998) (31)
- Monolithically integrated InGaAs-AlGaInAs Mach-Zehnder Interferometer optical switch using quantum-well intermixing (2005) (30)
- Engineering quantum-dot lasers (2000) (29)
- Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP (1991) (29)
- Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers (2000) (27)
- AlGaInAs/InP Monolithically Integrated DFB Laser Array (2012) (27)
- Integration process for photonic integrated circuits using plasma damage induced layer intermixing (1995) (25)
- Monolithic 40-GHz Passively Mode-Locked AlGaInAs–InP 1.55-$\mu$m MQW Laser With Surface-Etched Distributed Bragg Reflector (2010) (25)
- High performance laser with nanopatterned active layer by selective area epitaxy (2005) (23)
- Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation (1997) (23)
- Time‐resolved photoluminescence microscopy of GaInAs/GaInAsP quantum wells intermixed using a pulsed laser technique (1996) (22)
- Fabrication of photonic integrated circuits using quantum well intermixing (1994) (22)
- The influence of single-photon absorption on the performance of the two-photon waveguide autocorrelator (1997) (20)
- Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry (2010) (20)
- Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures (2003) (20)
- Mode-Locked Laser Array Monolithically Integrated With MMI Combiner, SOA, and EA Modulator (2011) (19)
- Quantum well intermixing in GaInNAs'GaAs structures (2003) (19)
- 10-GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter (2011) (18)
- A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling (1998) (18)
- The effect of cladding layer thickness on large optical cavity 650-nm lasers (2002) (16)
- Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures (1999) (16)
- Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers (2012) (15)
- 10-GHz Mode-Locked Extended Cavity Laser Integrated With Surface-Etched DBR Fabricated by Quantum-Well Intermixing (2011) (15)
- Efficient direct locking of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 μm (2002) (15)
- Quasi-phase-matching in GaAs-AlAs superlattice waveguides via bandgap tuning using quantum well intermixing (2000) (15)
- GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (1995) (14)
- Advances in semiconductor lasers (2012) (14)
- Effect of p and n doping on neutral impurity and dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures (1997) (14)
- A comparison of carbon and zinc doping in GaAs/AlGaAs lasers bandgap-tuned by impurity-free vacancy disordering (1994) (14)
- Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs (1994) (14)
- CWDM source based on AlGaInAs/InP monolithically integrated DFB laser array. (2011) (14)
- 160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laser. (2010) (13)
- Optical characterization of GaAs/AlGaAs quantum well wires fabricated using arsenic implantation induced intermixing (1998) (13)
- Performance comparison of GaInNAs vertical-cavity semiconductor optical amplifiers (2005) (13)
- 80-GHz AlGaInAs/InP 1.55 μm colliding-pulse mode-locked laser with low divergence angle and timing jitter (2011) (12)
- Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique (2000) (12)
- Monolithic 45-GHz Mode-Locked Surface-Etched DBR Laser Using Quantum-Well Intermixing Technology (2010) (12)
- 160-GHz Passively Mode-Locked AlGaInAs 1.55-$\mu$m Strained Quantum-Well Compound Cavity Laser (2010) (12)
- 490 fs pulse generation from a passive C-band AlGaInAs/InP quantum well mode-locked laser. (2012) (11)
- Passive modelocking in semiconductor lasers with monolithically integrated passive waveguides (1998) (11)
- Passive mode locking of InAlGaAs 1.3-/spl mu/m strained quantum wells extended cavity laser fabricated by quantum-well intermixing (2004) (11)
- Temperature Behaviour of Pulse Repetition Frequency in Passively Mode-Locked InGaAsP/InP Laser Diode—Experimental Results and Simple Model (2007) (11)
- Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing (2003) (11)
- Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures (1994) (11)
- Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron (1991) (10)
- Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study (2008) (10)
- 160-GHz 1.55-$\mu{\rm m}$ Colliding-Pulse Mode-Locked AlGaInAs/InP Laser With High Power and Low Divergence Angle (2012) (9)
- Influence of composition diffusion on the band structures of InGaNAs∕GaAs quantum wells investigated by the band-anticrossing model (2005) (9)
- Far-field behaviour of 980 nm broad area lasers incorporating bandgap widened extended slab waveguides (1995) (9)
- Band gap gratings using quantum well intermixing for quasi-phase-matching (2006) (9)
- High brightness single-mode ridge laser utilizing buried heterostructure defined by quantum-well intermixing (2002) (9)
- High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers. (2012) (8)
- 10-GHz AlGaInAs/InP 1.55- $\mu$m Passively Mode-Locked Laser With Low Divergence Angle and Timing Jitter (2011) (8)
- Current injection tunable monolithically integrated InGaAs-InAlGaAs asymmetric Mach-Zehnder interferometer using quantum-well intermixing (2005) (8)
- Electron-beam writing of photonic crystal patterns using a large beam-spot diameter (2003) (8)
- Laser structure for generating high optical power in a singlemode waveguide (1998) (7)
- Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch (1998) (7)
- Fabrication of quantum well photonic integrated circuits using laser processing (1996) (7)
- Quantum well intermixing for optoelectronic integration (1994) (7)
- High average power (200 mW) 40 GHz mode-locked DBR lasers with integrated tapered optical amplifiers (2012) (6)
- Angled grating distributed feedback laser (2001) (6)
- The application of the selective intermixing in selected area (SISA) technique to the fabrication of photonic devices in GaAs/AlGaAs structures (1995) (6)
- Bandgap tuning of visible laser material (1998) (6)
- Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination (2005) (6)
- Spatially resolved photoluminescence and Raman spectroscopy of bandgap gratings fabricated in GaAs/AlAs superlattice waveguide using quantum well intermixing (2006) (6)
- Broad-area InAs/GaAs quantum dot lasers incorporating Intermixed passive waveguide (2007) (5)
- Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing (1999) (5)
- Semiconductor quantum well intermixing using sputtered silica and its applications to devices (2003) (5)
- Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 mu m (1991) (4)
- Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers (1998) (4)
- Extended cavity ridge waveguide lasers operating at 1.5 [micro sign]m using a simple damage induced quantum well intermixing process (1997) (4)
- High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier (2013) (4)
- Photonic wire Bragg gratings (2003) (4)
- Analysis of monolithic parallel-compound-cavity semiconductor lasers for high brightness, single-frequency, and short pulse operation (1999) (4)
- Large diameter semiconductor ring lasers in tensile strained InP/InGaAsP material (1996) (3)
- Process development on the monolithic fabrication of an ultra-compact 4/spl times/4 optical switch matrix on InP-InGaAsP material (1999) (3)
- Nonabsorbing Mirrors for Quantum-Well Colliding Pulse Mode-Locked Lasers (2011) (3)
- Investigation of spectrally broad gain multiple-width quantum well material for colliding pulse mode-locked operation (2004) (3)
- Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation (1996) (3)
- Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range (2005) (3)
- Coupled microcavity in photonic wire Bragg grating (2004) (3)
- Monolithic integration of InGaAs/AIGaInAs Mach-Zehnder interferometers using quantum well intermixing (2003) (3)
- Integrated asymmetric Mach-Zehnder interferometer WDM (de)multiplexer using quantum well intermixing (2005) (3)
- Non absorbing mirror laser with improved catastrophic optical damage level (2002) (3)
- Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques (2003) (3)
- Passive mode-locking in quantum-well lasers (2010) (2)
- 40 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter (2011) (2)
- Passive Mode-Locking in AlGaInAs 1.55-µm strained quantum well lasers: Modeling and experiment (2010) (2)
- Highly-Sensitive Sonogram for Assessment of Chirp in Semiconductor Mode-Locked Lasers (2012) (2)
- Low-threshold oxide-confined compact edge-emitting semiconductor laser diodes with high-reflectivity 1D photonic crystal mirrors (2005) (2)
- Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation (2003) (2)
- STUDY OF C2F6 OVERETCH INDUCED DAMAGE AND THE EFFECTS OF OVERETCH ON SUBSEQUENT SICL4 ETCH OF GAAS/ALGAAS (1995) (2)
- Bandgap tuning of lasers, modulators, and passive waveguides in GaInAsP using photoabsorption-induced disordering (1995) (2)
- The Definition of Multiple Bandgaps in Quantum-Dot Material by Intermixing (2004) (2)
- Extended Cavity Lasers in InGaAs-InGaAsP and GaInP-AlGaInP Multi-Quantum Well Structure Using a Sputtered SiO2 Technique (1999) (2)
- Neutral Impurity Disordering of III-V Quantum well Structures for Optoelectronic Integration (1991) (2)
- High peak power (550 mW) 40 GHz mode-locked DBR lasers with integrated optical amplifiers (2011) (2)
- Selective quantum well intermixing of 1.22 and 1.55 /spl mu/m GaInNAs laser material (2004) (2)
- Low damage reactive ion etching process for fabrication of ridge waveguide lasers (1997) (2)
- Photonic wire Bragg gratings reflector and microcavity (2003) (1)
- Sub-picosecond pulse generation using fast saturable absorption in AlGaInAs/InP quantum wells (2010) (1)
- Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs/InAlGaAs multiple quantum wells using quantum well intermixing (2001) (1)
- Feasibility of monolithic device integration in GaInP/AlGaInP using Photoabsorption Induced Disordering (1996) (1)
- Segmented gain-section AlGaInP laser (2001) (1)
- 35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m (2004) (1)
- Harmonic Modelocking at up to 440 GHz Repetition Rates in InGaAs-InAIGaAs Quantum Well Lasers (1998) (1)
- Non-absorbing mirrors in mode-locked lasers (2010) (1)
- Monolithic integration in InGaAs/InGaAsP multiple quantum well structures using laser and plasma processing (1997) (1)
- Monolithic integration in III-V semiconductors via a universal damage enhanced quantum well intermixing technique (1998) (1)
- LETTER TO THE EDITOR: Optical loss in large optical cavity 650 nm lasers (2001) (1)
- Monolithically integrated distributed Bragg reflector lasers for 1.5 μm operation with band gap shifted grating section (2000) (1)
- High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering (1994) (1)
- Buffering Strategies for Optical Packet Switches (2000) (1)
- A low jitter passively mode locked laser diode at 40 GHz using regenerative feedback via an optical fiber loop (2011) (1)
- Terahertz-frequency mode-locking of monolithic compound-cavity laser diodes (2002) (1)
- Wide range 40-GHz Passive Mode-Locking operation of an AlGaInAs 1.55-µm Strained Quantum Well laser (2009) (1)
- Characterization of deeply etched uniform sidewall gratings in InP/InGaAsP ridge waveguides (2009) (1)
- GaAs/AlGaAs colliding pulse mode-locked lasers with non-absorbing mirrors (2010) (1)
- Passive mode-locking of AlGaInAs quantum well laser, modelling and experiment (2009) (1)
- Fabrication of a monolithic 2 /spl times/ 2 crosspoint switches in an InGaAs/InAlGaAs multiple quantum well structure using quantum well intermixing (2001) (1)
- The electronic structure and optical properties of intermixed GaAs/AlGaAs double quantum wells (1998) (1)
- Illinois Nano EP Seminar Series Spring 2011: High frequency mode-locked diode lasers (2012) (0)
- Passive mode-locking in quantum well Fabry-Pérot lasers (2011) (0)
- Impurity Free Vacancy Disordering Using Phosphorus Doped SiO 2 and Pure SiO 2 Caps (1996) (0)
- Fabrication of narrow far-field InGaAs-InAlGaAs broad-area lasers using quantum well intermixed extended cavities (1998) (0)
- 10-GHz AlGaInAs/InP 1.55 ìm mode-locked laser with low divergence angle and timing jitter (2011) (0)
- High power GaAs/AlGaAs Mode-Locked lasers (2009) (0)
- Introduction to the Special Issue on Semiconductor Photonic Materials (2008) (0)
- Colliding-pulse mode-locked AlGaInAs laser operating at 20 GHz with narrow RF linewidth (2011) (0)
- Quantum Well Wires Using As Implantation Induced Intermixing in GaAs/AIGaAs (1998) (0)
- Low-divergence large-optical-cavity InGaAs quantum-dot laser with distributed active layers (2004) (0)
- 37 GHz colliding pulse mode locking operation of quantum dot asers operating close to 1.3μm (2006) (0)
- Disordering of long wavelength InGaAs/InGaAlAs multiple quantum wells using boron and fluorine (1990) (0)
- Reconfigurable repetition rate in colliding-pulse mode locked lasers with non-absorbing mirrors (2011) (0)
- Picosecond time-resolved photoluminescence microscopy of short period impurity free vacancy disordered AlGaAs gratings (2000) (0)
- Quantum Well Intermixing Using Sputtered Silica for Photonic Integrated Circuits Operating Around 1550 nm (1999) (0)
- Monolithic 40 GHz passively mode locked AlGaInAs/InP 1.55 µm MQW laser with surface-etched Bragg gratings (2010) (0)
- Photonic crystals and photonic wire technology and devices (2003) (0)
- Quasi-phase matciied second harmonic generation by modulating rula liku@ x(2) coefficients in caas-ai,as supe iwattices 13y quantum well intermixing (2000) (0)
- Mach-Zehnder Modulators Monolithically Integrated with Fabry-Perot Laser Diodes in GaAs/AIGaAs Using Impurity-Free Vacancy Disordering (1998) (0)
- Broad area self-focused distributed Bragg reflector laser diodes (2003) (0)
- Monolithic 40 GHz passively Modelocked AlGaInAs/InP 1.55 mm MQW Laser with Surface-etched Bragg Gratings[Paper ThD4] (2010) (0)
- AlGaInAs mode-locked lasers for ultrashort pulse harmonic mode locking (2011) (0)
- Mach-Zehnder modulators in GaAs/AlGaAs double quantum well structures: a regrowth-free approach for monolithic integration (1997) (0)
- High brightness multimode array laser diode (2009) (0)
- High power (130mW) 40 GHz 1.55 um mode-locked DBR lasers with integrated optical amplifiers (2011) (0)
- Characterization of quantum confined Stark effect and plasma effect on monolithically integrated InGaAs/AlGaInAs Mach-Zehnder interferometers (2004) (0)
- Experimental comparison of multiple quantum-well GaInNAs vertical-cavity SOAs (2004) (0)
- 160 GHz passively mode-locked AlGaInAs 1.55 μm compound cavity laser with single deeply etched intra-cavity reflector (2010) (0)
- Bandgap-tuned In0.5Ga0.5As/GaAs quantum dot lasers (2004) (0)
- Neutral impurity disordering of III‐V quantum well structures for optoelectronics (2008) (0)
- Quantum Well Intermixing in Gain As/Gainasp and Gaas/Algaas Structures Using Pulsed Laser Irradiation (1996) (0)
- InGaAlAs-InP ridge waveguide distributed Bragg reflector lasers with deeply dry-etched surface gratings (1999) (0)
- High frequency mode-locking of diode lasers (2010) (0)
- High-power and high-brightness visible semiconductor laser diodes (2000) (0)
- Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities (2003) (0)
- Active-Passive Component Integration on Quantum Dot Material - Extended Cavity Broad Area Quantum Dot Lasers (2006) (0)
- Quantum well intermixing technologies for quasi-phase-matching gratings (2000) (0)
- Phase-Locked Array Laser Using a Multi-Mode Interference Coupler: Theory and Experiments (1998) (0)
- 490-fs Pulse generation from a passively mode-locked laser with an integrated passive waveguide using quantum well intermixing (2012) (0)
- Extended cavity lasers fabricated using photo-absorption induced disordering (1997) (0)
- Efficient direct electrical locking of colliding pulse mode-locked lasers on semiinsulating substrate (2002) (0)
- Bragg grating microcavity in silicon-on-insulator photonic wire (2004) (0)
- Monolithic mode-locked diode laser [Invited Presentation] (2012) (0)
- Investigation of spectral gain broadening for mode-locking using InGaAs/InAlGaAs multiple width quantum wells at 1550 nm (2002) (0)
- CLEO/Europe-EQEC'98, Glasgow (1998) (0)
- Generation of photonic crystal patterns by single-spot electron beam lithography (2003) (0)
- Hybrid mode-locking of a monolithic semiconductor laser on semi-insulating InP substrate (2001) (0)
- 490-fs pulse generation from a quantum well AlGaInAs/InP mode-locked laser [Poster Presentation] (2012) (0)
- Extended cavity lasers in InGaAs-InGaAsP and InGaAlP-GaAs multi-quantum well structure using a sputtered SiO/sub 2/ technique (1998) (0)
- Graded-bandgap quantum-dot lasers and arrays (2008) (0)
- Dielectric Cap Disordering of InGaAs Quantum Well Structures on InP and GaAs (1992) (0)
- Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers (2004) (0)
- Characterisation of the resolution of impurity free vacancy disordering in GaAs-AlGaAs using Raman and photoluminescence correlation measurements (1998) (0)
- Integrated amplifier/multi-mode interference coupler laser for high optical power in a single-mode waveguide (1998) (0)
- Characterising compositional intermixing in GaAs/AlGaAs heterostructures using Raman spectroscopy (1999) (0)
- Low threshold oxide confined compact edge-emitting semiconducting laser diodes with high reflectivity 1-D PBG mirrors (2004) (0)
- Monolithic Integration of InGaAs-InAIGaAs Optolectronic Devices for 1.55/spl mu/m Emission by Quantum Well Intermixing (1998) (0)
- 1.3 µm single‐mode extended cavity GaInNAs lasers produced using a sputtered SiO2 quantum well intermixing technique (2006) (0)
- Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth (2005) (0)
- Beam steering via wavelength tuning in arrayed waveguide gratings (2000) (0)
- Deep surface grating DFB and DBR quantum well diode lasers in AlGaAs/GaAs for photonic integration (1995) (0)
- Monolithic mode-locked diode lasers (2012) (0)
- Passive mode locking of InAlGaAs 1.3 /spl mu/m extended cavity lasers fabricated by quantum well intermixing (2002) (0)
- Stable optical pulse generation by subharmonically locking a two-section passive modelocked semiconductor laser (1997) (0)
- Influence of operating temperature on passive mode locking of InGaAsP/InP laser diode (2005) (0)
- Extended operating temperature range of passively mode locked laser diode based on adaptable saturable absorber design (2005) (0)
- Post-growth quantum well intermixing and hydrogen passivation for fabricating extended cavity lasers on InP with improved performance (2005) (0)
- Tunable InGaAs/AlGaInAs (de)multiplexer based on integrated asymmetric Mach-Zehnder interferometer using quantum well intermixing (2004) (0)
- 160 GHz 1.55 µm colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap (2011) (0)
- Advances In Layer Intermixing Of InP Related Material By Laser Induced Thermal Diffusion. (1992) (0)
- High aspect ratio inductively coupled plasma (ICP) etching of InP/InGaAsP/AlGaInAs using Cl2/Ar/N2 gas mixture (2009) (0)
- Chirp characterization of semiconductor mode-locked laser pulses with a high-sensitivity TPA waveguide detector sonogram (2010) (0)
- Multimode interference coupled array laser (2009) (0)
- Selective control of In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot properties by rapid thermal processing: quantum dot intermixing (1999) (0)
- Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser (2011) (0)
- Time-resolved photoluminescence measurements on Ga/sub 0.47/In/sub 0.53/As/InP multiple quantum well structures (1988) (0)
- Monolithic 40 GHz Mode-Locked Surface Etched DBR Laser Using Quantum-Well Intermixed Technology. [Paper CM113] (2010) (0)
- Improved lateral mode stability from ridge laser using self-aligned buried heterostructure defined by defect induced quantum well intermixing (2002) (0)
- Multiple-wavelength laser chip fabricated by using spatially controlled quantum-well intermixing (1995) (0)
- Noise Reduction In Passive Mode-locked Semiconductor Lasers By Subbarmoning Locking (1997) (0)
- Polarisation effects in an In/sub 0.53/Ga/sub 0.47/As/InP quantum well waveguide modulator operating in the 1.57 mu m wavelength region (1990) (0)
- Index-guided segmented gain-section laser (2001) (0)
- Cause and possible cures for delamination of epitaxial structures containing wet thermally oxidised aluminium arsenide (AlAs) during optoelectronic device processing (2004) (0)
- Low-cost light source for optical fiber communication systems (2012) (0)
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