Chang Chun-yen

Q: What Schools Are Affiliated With Chang Chun-yen

Chang Chun-yen is affiliated with the following schools: National Yang Ming Chiao Tung University, National Cheng Kung University, Syracuse University

Chang Chun-yen's AcademicInfluence.com Rankings

Chang Chun-yen

Engineering

#1450

World Rank

#2137

Historical Rank

Applied Physics

#2676

World Rank

#2718

Historical Rank

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Engineering

Why Is Chang Chun-yen Influential?

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According to Wikipedia, Chang Chun-yen was a Taiwanese electrical engineer and professor who served as President of National Chiao Tung University . He was a member of Academia Sinica. He was also elected an international member of the US National Academy of Engineering in 2000 for contributions to Taiwanese electronics industry, education, and materials technology.

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Chang Chun-yen's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

The effect of surface aluminum oxide films on thermally induced hillock formation (1993) (67)
EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS (1994) (42)
Thermally induced hillock formation in Al–Cu films (1989) (42)
GaAs high-speed devices : physics, technology, and circuit applications (1994) (41)
Copper electroplating for future ultralarge scale integration interconnection (2000) (40)
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress (2011) (37)
CHARACTERISTICS OF LOW-TEMPERATURE AND LOW-ENERGY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2 (1993) (36)
Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films (1997) (35)
Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method (1985) (35)
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors (2012) (34)
SiO2 passivation effect on the hydrogen adsorption performance of a Pd/AlGaN-based Schottky diode (2009) (33)
Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1−xGex structures (2000) (31)
Properties of plasma‐enhanced chemical‐vapor‐deposited a‐SiNx:H by various dilution gases (1994) (30)
Phosphorus doping of Si and Si1−xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 (1996) (29)
Temperature Dependence of Ionization Rates in GaAs (1969) (29)
DNA hybridization measurement by self-sensing piezoresistive microcantilevers in CMOS biosensor (2008) (28)
Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy (1985) (28)
Surface morphologies of GaAs layers grown by arsenic‐pressure‐controlled molecular beam epitaxy (1986) (27)
Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode (2011) (27)
RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES (1990) (27)
Topography and microstructure of Al films formed under various deposition conditions (1991) (27)
Hillock growth on aluminum and aluminum alloy films (1992) (26)
The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition* (1991) (24)
Development of a double-microcantilever for surface stress measurement in microsensors (2007) (24)
Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs (2004) (23)
The Electrochemical Performance of Bias-Sputter-Deposited Nanocrystalline Nickel Oxide Thin Films Toward Lithium (2005) (23)
Electrical and optical properties of heavily doped Mg- and Te-GaAs grown by liquid-phase epitaxy (1988) (22)
Contact resistance in metal-semiconductor systems☆ (1979) (22)
Investigation of zinc incorporation in GaAs epilayers grown by low‐pressure metalorganic chemical‐vapor deposition (1987) (21)
Minipressure sensor using AlGaN/GaN high electron mobility transistors (2009) (20)
A piezoresistive bridge-microcantilever biosensor by CMOS process for surface stress measurement (2010) (19)
On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) (2012) (19)
Two‐dimensional electron gases in delta‐doped GaAs/In0.25Ga0.75As/GaAs heterostructures (1991) (18)
Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy (1994) (18)
Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter (1985) (18)
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation (2015) (17)
The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes (1987) (17)
The study of emitter thickness effect on the heterostructure emitter bipolar transistors (1993) (17)
ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications (2011) (17)
Investigation of Sn‐doped GaAs epilayers grown by low pressure metal‐organic chemical vapor deposition (1983) (16)
Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates (2010) (16)
On the temperature compensation of parallel piezoresistive microcantilevers in CMOS biosensor (2008) (15)
High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate (2013) (15)
ANALYSIS OF DIFFERENTIAL GAIN IN GAAS/ALGAAS QUANTUM-WELL LASERS (1994) (15)
Suppression of Boron Penetration in P+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation (1997) (14)
Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing (1998) (14)
A biosensor chip by CMOS process for surface stress measurement in bioanalyte (2007) (13)
BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION USING SI2H6 AND GEH4 (1995) (13)
Characteristics of graded‐like multiple‐delta‐doped GaAs field effect transistors (1995) (13)
Characterization of TiN film grown by low-pressure-chemical- vapor-deposition (1997) (12)
Isothermal annealing of hillocks in AlCu films (1989) (12)
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy (2000) (12)
The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P (1985) (11)
Low temperature epitaxy of Si and Si1−xGex by utrahigh vacuum-chemical molecular epitaxy (1997) (11)
Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition (2009) (11)
Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing (1998) (11)
Formation and growth of electromigration induced islands in aluminum and in aluminum alloy films (1993) (11)
Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition (1983) (10)
The Time Response of the On-Current for the Amorphous In-Ga-Zn-O Thin Film Transistor to the Illumination Pulse (2014) (10)
Temperature effects on carbon and zinc incorporations in GaAs grown by low‐pressure metalorganic chemical vapor deposition (1987) (10)
Temperature-dependent characteristics of MBE-grown GaAs p+-v-p+-v-n+ regenerative switching device (1985) (10)
A Simple and Low-Cost Personal Computer-Based Automatic Deep-Level Transient Spectroscopy System for Semiconductor Devices Analysis (1984) (9)
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION (1993) (8)
Electromigration studies using in situ TEM electrical resistance measurements (1990) (8)
Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing (1996) (8)
Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization (1999) (7)
Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1−x−yGexCy by vacuum annealing and pulsed KrF laser annealing (2000) (7)
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures (2000) (7)
High-temperature behaviour of Pd-n-GaAs contacts (1988) (7)
Surface Immobilizations of AlGaN/GaN High Electron Mobility Transistor Based Sensors (2010) (7)
Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons (1991) (7)
Evidence of Zero Potential Spike Energy in AlGaAs/GaAs Heterostructure Emitter Bipolar Transistors (1993) (7)
Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth (1995) (7)
High Purity In0.5Ga0.5P Grown on GaAs by Liquid Phase Epitaxy (1986) (7)
High Vth enhancement mode GaN power devices with high ID, max using hybrid ferroelectric charge trap gate stack (2017) (7)
Amorphous Silicon Thin Film Phototransistor (1984) (6)
On the Surface Defects of MBE-Grown GaAs Layers (1985) (6)
Amorphous Al/n+a-SiC/i a-SiC/p+a-SiC/i a-Si/n+a-SiC Hetero-Junction Photo-Transistor with High Gain and High Speed (1986) (6)
Molecular beam epitaxially grown circular U-groove barrier transistor (1985) (6)
Capture-emission process in double Poole-Frenkel well traps: theory and experiments (1986) (6)
Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular‐beam epitaxy (1989) (6)
Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing (1999) (5)
Effect of packing density on the coercivity of elongated Fe3O4 particles (1985) (5)
Nanometer thick Si/SiGe strained‐layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994) (5)
Substrate orientation dependence of low‐temperature GaAs grown by molecular beam epitaxy (1995) (5)
Very Low Sheet Resistance AlN / GaN High Electron Mobility Transistors (2009) (4)
In-Situ TEM Observation of Electromigration Damage by Surface or Interface Diffusion in Al and Al Alloy Films (1991) (4)
Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)] (2009) (4)
Incorporation of Al and Ga in AlGaAs grown by low‐pressure triethyl gallium metalorganic vapor‐phase epitaxy (1985) (4)
The interfacial reaction and electrical characteristics of molybdenum-n-GaAs contacts (1988) (4)
On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structures (1985) (4)
An isolated Al-poly Si−(p)Si−(n+)Si switching device (1986) (4)
The catastrophic phase of electromigration: surface diffusion, island formation, and film thinning (1992) (4)
Effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer on the enhanced formation of C54 Ti(Si1−xGex)2 (1999) (3)
MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications (1989) (3)
Personal computer‐based automatic measurement system applicable to deep‐level transient spectroscopy (1984) (3)
High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy (1994) (3)
Simulation of VMOS power transistors (1984) (3)
Inversion criteria for the metal‐insulator‐semiconductor tunnel structures (1986) (3)
Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxy (1995) (3)
As precipitate redistribution in Si δ‐doped low‐temperature GaAs (1994) (3)
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy (2000) (3)
Isolated AI-SiN-(p)Si-(n)Si MISS device (1986) (3)
The application of delta-doping in heterojunction bipolar transistors (1994) (3)
Kinetic Study of Electromigration in Al and Al Alloy Thin Films by Combined Resistance and Temperature Change Measurements (1991) (3)
Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor (2008) (3)
Deposition of in situ boron‐doped polycrystalline silicon films at reduced pressures (1994) (3)
AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications (2009) (3)
Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing (2000) (3)
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE (1995) (2)
190nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole (2009) (2)
Pulsed KrF laser annealing of Mo/Si0.76Ge0.24 (2000) (2)
ZERO-TEMPERATURE ENTROPY OF FULLY FRUSTRATED GENERALIZED SIERPINSKI GASKETS (1993) (2)
LUMINESCENCE OF LOW-TEMPERATURE GAAS IN A GAAS/IN0.2GA0.8AS MULTIPLE-QUANTUM-WELL STRUCTURE (1995) (2)
Combined resistance and temperature change measurement for the study of electromigration (1990) (2)
Role of surface diffusion in electromigration phenomena (1993) (1)
Effects of the third-electrode positions on three-terminal GaAs p+n-δ(p+)n-n+ switching devices (1987) (1)
Enhanced Tribological, Electrochemical, and Biocompatibility Properties of Ti6Al4V Alloy Through Gas Nitriding and CN Coating Deposition (2018) (1)
Theoretical Calculation on the Coercivity of Single Acicular γ-Fe 2 O 3 Particle (1985) (1)
Characteristics of P-I-N laser detectors: their dependence on wavelength and temperature. (1979) (1)
Surface analysis of In1−xGaxAsyP1−y epilayer growth by liquid-phase epitaxy (1986) (1)
AlGaN/GaN High Electron Mobility Transistors integrated into Wireless Detection System for Glucose and pH in Exhaled Breath Condensate (2009) (1)
Erratum: Effect of packing density on the coercivity of elongated Fe3O4 particles [J. Appl. Phys. 57, 4678 (1985)] (1986) (1)
Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination (2017) (1)
Temperature dependent isomer shift in Sn119 — Pseudopotential approach (1980) (1)
Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy (1990) (1)
An investigation of minority carrier lifetime in silicon doped either with zinc or cobalt (1980) (1)
The New High Speed Device: The TEG-base Transistor (1986) (1)
Nanostructured Surface Morphology of ZnO Grown On A-plane GaN (2009) (1)
GaAs n + i p + in + barrier transistor with ultra-thin p + AlGaAs base prepared by molecular beam epitaxy (1986) (1)
Compressive and tensile strain effects on hole tunneling in an InGaAs/AlInAs asymmetrical coupled quantum well (1993) (1)
Photoluminescence of ZnO Nanowires with Eu Diffusion Process (2008) (1)
Quantum confinement effects of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994) (1)
Application of superlattice gate and modulation-doped buffer for GaAs power MESFET grown by MBE (1989) (1)
Morphology and defect study in low pressure MOCVD grown AlGaAs (1987) (1)
High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures (1994) (1)
On the temperature compensation of parallel piezoresistive microcantilevers in biosensors (2007) (0)
FORMATION OF MICRO ROUGH POLY SURFACE FOR LOW SHEET RESISTANCE (2017) (0)
Characterization of the Porous Boron δ-Doped Si Superlattice (1994) (0)
Erratum: “Copper electroplating for future ultralarge scale integration interconnection” [J. Vac. Sci. Technol. A 18, 656 (2000)] (2000) (0)
DEPENDENCE OF PROPERTIES ON PLASMA POWER IN AN a-Si-H FILM. (1981) (0)
The reaction of Co and Si 1 x Ge x for MOSFET with poly-Si 1 x Ge x gate (2001) (0)
Pulsed KrF laser annealing of Mo / Si 0 : 76 Ge 0 : 24 (2000) (0)
The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors (2012) (0)
Detection of Glucose and pH from Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors (2009) (0)
The growth of high purity InGaP on GaAs by liquid phase epitaxy (1986) (0)
Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers (1985) (0)
Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P+-Poly-Si Gate of PMOSFET's (1996) (0)
Biosensors Using Functionalized ZnO and GaN Surfaces (2009) (0)
Drilling of via Holes in AlGaN/GaN Transistors on SiC using ArF based UV Excimer Laser (2011) (0)
Effects of Sill 4 , GeH 4 , and B 2 H 6 on the Nucleation and Deposition of Polycrystalline Sil _ xGex Films (2005) (0)
AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications (2010) (0)
The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD (1988) (0)
Interfacial reactions of Ni / Si 0 : 76 Ge 0 : 24 and Ni / Si 1 ÿ x ÿ y Ge x C y by vacuum annealing and pulsed KrF laser annealing (2000) (0)
Amsterdam ELECTRICAL AND OPTICAL PROPERTIES OF HIGH PURITY In 05 Ga 0 ~ PGROWN ON GaAs BY LIQUID PHASE EPITAXY (0)
Circuit of gate driver on array with direct threshold voltage compensation for the pull-down transistors (2014) (0)
High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer (2014) (0)
MIS SOLAR CELL MADE ON PLASMA HYDROGENATED POLYCRYSTALLINE SILICON. (1982) (0)
Roles of Ba/Ti ratio on the crystal structure and microstructure of barium titanate powders (2008) (0)
Semi-insulating iron-doped indium phosphide grown by low-pressure metal-organic chemical vapour deposition (1993) (0)
A MBE grown negative differential resistance transistor using n .ip+ in+ structure are presented. Owing (2017) (0)
MBE-Grown GaAs Voltage-Controlled Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor (1990) (0)
Impact of Oriented Crystalline InGaZnO Semiconductor on Electrical Properties of Thin Film Transistor (2014) (0)
The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers (2015) (0)
High Performance Pt / SrBi 2 Ta 2 O 9 / HfO 2 / Si Structure for 1 T Ferroelectric Random Access Memory (2003) (0)
Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate (1995) (0)
The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor (1986) (0)
Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τ x ≤30μs) (1985) (0)
Interfacial reactions of Ni on Si , . , , GeO ~ , 4 and Si by pulsed laser annealing (2004) (0)
Low Temperature Hydrothermal Growth of ZnO Nanorods and its Applications (2009) (0)
Wavelength and temperature dependence of RAPD aser detectors. (1981) (0)
Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si1-x Gex PMOSFET's (2000) (0)
The authors wish to thank Dr. S. M. Sze for his constructive sug- gestions and discussions during the course of study. Thanks are also due to the technical staff of Semiconductor Research Laboratory, National Chiao Tung University, for sample preparation. (1971) (0)
Dimensional effects on the reliability of polycrystalline silicon thin-film transistors (2000) (0)
Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT) (2004) (0)
Effects of SiH4, GeH4, and B2H6 on the Nucleation and Deposition of Polycrystalline Si1-xGex Films. (1994) (0)
Low-k SiC x N y Etch-Stop / Diffusion Barrier Films for Back-End Interconnect Applications (2016) (0)
DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE. (1984) (0)
Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress (2011) (0)
Novel Small-dimension Poly-Si TFTs with Improved Driving Current and Suppressed Short Channel Effects (2002) (0)
Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress (2011) (0)
A Tristate Switch Using Triangular Barriers (1990) (0)
Annealing effects on the interfacial reactions of Ni on Si 0.76 Ge 0.24 and Si 1xy Ge x C y (2014) (0)
Effects of negative-gate-bias with illumination stress on the hysteresis in the transfer curve of a-IGZO TFT Measured by the new sampling method (2014) (0)
Voltage-controlled three terminal GaAs negative differential resistance device using n+-i-p+-i-n+ structure (1990) (0)
DLTS MEASUREMENT OF BULK DENSITY OF GAP STATES IN PLASMA ENHANCED CVD AMORPHOUS SILICON. (1981) (0)
GaAs n** plus i delta p** plus in** plus BARRIER TRANSISTOR WITH ULTRA-THIN p** plus AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY. (1986) (0)
Real-time Detection of Botulinum Toxin with AlGaN/GaN High Electron Mobility Transistors (2009) (0)
Hydrothermally Grown ZnO Nanorods as Cell Adhesion Control Coating for Implant Devices (2009) (0)
Low Temperature Growth C-54 TiSi_2 by Plasma Enhanced Chemical Vapor Deposition of Titanium on (001)Si (1997) (0)
Impact of La 2 O 3 Interfacial Layers on InGaAs MOS Interface Properties in ALD Al 2 O 3 /La 2 O 3 /InGaAs Gate Stacks (2015) (0)
The Resistance Effect on Turn-on Speed of Resistor Assisted Trigger SCR Stacking Structure (2015) (0)
EXPERIMENTAL OBSERVATIONS OF MOBILITY AND LIFETIME IN a-Si-H THIN FILMS. (1981) (0)
Measurement of DNA Hybridization by Nano-Deformation of Microcantilever in CMOS Biosensor (2008) (0)

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Other Resources About Chang Chun-yen

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What Schools Are Affiliated With Chang Chun-yen?

Chang Chun-yen is affiliated with the following schools: