Charles W. Tu
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Charles W. Tuengineering Degrees
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Materials Science
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Engineering
Charles W. Tu's Degrees
- Bachelors Electrical Engineering National Taiwan University
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(Suggest an Edit or Addition)Charles W. Tu's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Bowing parameter of the band-gap energy of GaNxAs1−x (1997) (343)
- Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy (1999) (242)
- Nature of the fundamental band gap in GaNxP1−x alloys (2000) (211)
- Donor neutralization in GaAs(Si) by atomic hydrogen (1985) (206)
- GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy (1998) (179)
- Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs (2000) (175)
- Direct determination of electron effective mass in GaNAs/GaAs quantum wells (2000) (161)
- Hydrogenation of shallow‐donor levels in GaAs (1986) (138)
- Band Anticrossing in III-N-V Alloys (2001) (131)
- Effects of nitrogen on the band structure of GaNxP1−x alloys (2000) (127)
- Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells (1999) (114)
- Temperature Dependence of InP and GaAs Etching in a Chlorine Plasma (1982) (113)
- Formation of an impurity band and its quantum confinement in heavily doped GaAs:N (2000) (105)
- Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires. (2005) (103)
- N incorporation in GaP and band gap bowing of GaNxP1−x (1996) (97)
- Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy (2000) (96)
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure (1986) (95)
- N incorporation in InP and band gap bowing of InNxP1−x (1996) (91)
- Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells (2001) (88)
- Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band (2000) (88)
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption (1987) (85)
- Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure (1987) (81)
- Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs{sub 1-x}N{sub x} (2001) (77)
- Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition (1998) (76)
- Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover (2002) (76)
- Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor. (2009) (75)
- Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets (1986) (75)
- Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology (1986) (74)
- Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells (1999) (70)
- Scaling of band-gap reduction in heavily nitrogen doped GaAs (2001) (68)
- Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy (1999) (65)
- Sputtered NiOx Films for Stabilization of p+n‐InP Photoanodes for Solar‐Driven Water Oxidation (2015) (65)
- Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells (2014) (64)
- Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance (2001) (63)
- Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy (1991) (62)
- Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures (1999) (59)
- Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells (1986) (58)
- Radiative recombination mechanism in GaNxP1−x alloys (2002) (57)
- Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy (1985) (55)
- Laser‐assisted metalorganic molecular beam epitaxy of GaAs (1988) (55)
- Type I band alignment in the GaN x As 1-x /GaAs quantum wells (2000) (55)
- Signature of an intrinsic point defect in GaN x As 1-x (2001) (53)
- Shallow donors and D‐X centers neutralization by atomic hydrogen in GaAlAs doped with silicon (1988) (52)
- Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices (1989) (52)
- Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy (1983) (52)
- Heterojunction bipolar transistors implemented with GaInNAs materials (2002) (51)
- Valence-band splitting and shear deformation potential of dilute GaAs 1 − x N x alloys (2000) (51)
- Band anticrossing in GaP 1-x N x alloys (2002) (51)
- Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators (1993) (51)
- Nanofabrication of 1-D photonic bandgap structures along a photonic wire (1996) (50)
- Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature (1992) (50)
- Reflected degenerate four‐wave mixing on GaAs single quantum wells (1988) (50)
- Hydrogen-induced improvements in optical quality of GaNAs alloys (2003) (48)
- Double‐disk structure for output coupling in microdisk lasers (1994) (48)
- Interface structure and optical properties of quantum wells and quantum boxes (1987) (47)
- Dynamics of exciton transfer between monolayer‐flat islands in single quantum wells (1987) (47)
- Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials (2009) (47)
- Diffusion and drift of Si dopants in δ‐doped n‐type AlxGa1−xAs (1989) (47)
- HIGH QUALITY CUINSE2 FILMS GROWN ON PSEUDO-LATTICE-MATCHED SUBSTRATES BY MOLECULAR BEAM EPITAXY (1996) (46)
- Analysis of band anticrossing in GaNxP1-x alloys (2004) (45)
- Synthesis of InNxP1−x thin films by N ion implantation (2001) (44)
- Nitrogen passivation induced by atomic hydrogen : The GaP1-yNy case (2003) (43)
- III-N-V low-bandgap nitrides and their device applications (2001) (43)
- Formation of diluted III–V nitride thin films by N ion implantation (2001) (43)
- Magneto-optical and light-emission properties of III–As–N semiconductors (2002) (43)
- Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy (2012) (42)
- Recombination processes in N-containing III–V ternary alloys (2003) (42)
- A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy (1993) (41)
- Effect of arsenic species on the formation of (Ga)InAs nanostructures after partial capping and regrowth (2007) (40)
- GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy (2013) (40)
- Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells (2000) (39)
- Localized surface plasmon-enhanced green quantum dot light-emitting diodes using gold nanoparticles (2015) (38)
- Evidence for coupling between exciton emissions and surface plasmon in Ni-coated ZnO nanowires (2012) (38)
- GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates (2000) (37)
- Linearization of 1.3-/spl mu/m MQW electroabsorption modulators using an all-optical frequency-insensitive technique (1998) (37)
- Turning ZnO into an Efficient Energy Upconversion Material by Defect Engineering (2014) (37)
- Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991) (36)
- In situ determination of phosphorus composition in GaAs1−xPx grown by gas‐source molecular beam epitaxy (1991) (36)
- Growth of Single‐Crystalline Epitaxial Group II Fluoride Films on InP ( 001 ) by Molecular‐Beam Epitaxy (1983) (35)
- Directional light output from photonic-wire microcavity semiconductor lasers (1996) (35)
- InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base (1992) (34)
- Impact ionization coefficients in (100) GaInP (1995) (33)
- Evolution of GaAs{sub 1-x}N{sub x} conduction states and giant Au/GaAs{sub 1-x}N{sub x} Schottky barrier reduction studied by ballistic electron emission spectroscopy (2000) (33)
- Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y (2005) (32)
- Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy (2014) (32)
- Origin of n‐type conductivity of low‐temperature grown InP (1994) (31)
- Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1−y grown on GaAs(001) substrates (2003) (30)
- Temperature dependence of the GaNxP1−x band gap and effect of band crossover (2002) (30)
- Defects in Dilute Nitrides (2004) (30)
- Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators (1996) (30)
- Optical evidence of staggered band alignments in (Al,Ga)As/AlAs multi‐quantum‐well structures (1986) (29)
- In situ control of As composition in InAsP and InGaAsP grown by gas‐source molecular beam epitaxy (1992) (29)
- Surface etching kinetics of hydrogen plasma on InP (1982) (28)
- Energy upconversion in GaP/GaNP core/shell nanowires for enhanced near-infrared light harvesting. (2014) (28)
- Nature of band bending at semiconductor surfaces by contactless electroreflectance (1992) (28)
- Microwave structures for traveling-wave MQW electroabsorption modulators for wideband 1.3-μm photonic links (1997) (28)
- Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires (2012) (28)
- Gas‐source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures (1991) (27)
- Physical properties and efficiency of GaNP light emitting diodes (2008) (27)
- Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100) (1993) (26)
- Novel GaAs/AlGaAs multiquantum-well Schottky-junction device and its photovoltaic LWIR detection (1992) (26)
- Structural properties of a GaNxP1−x alloy: Raman studies (2001) (26)
- Efficient upconversion of photoluminescence via two-photon absorption in bulk and nanorod ZnO (2012) (26)
- Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy (2005) (26)
- Surface studies of InP by electron energy loss spectroscopy and Auger electron spectroscopy (1982) (26)
- Multiple dislocation loops in linearly graded InxGa1−xAs (0≤x≤0.53) on GaAs and InxGa1−xP (0≤x≤0.32) on GaP (1993) (26)
- Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994) (25)
- Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces (2012) (25)
- Effects of arsenic in gas-source molecular beam epitaxy (1998) (25)
- GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage (2002) (24)
- Defect formation near GaN surfaces and interfaces (1999) (24)
- Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy (2000) (24)
- Point defects in dilute nitride III-N-As and III-N-P (2006) (24)
- Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor (2013) (24)
- A study of group-V element desorption from InAs, InP, GaAs and GaP by reflection high-energy electron diffraction (1993) (23)
- III-V heterostructures for electronic/photonic devices (1989) (22)
- Origin of strong photoluminescence polarization in GaNP nanowires. (2014) (22)
- Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy (2000) (21)
- Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys (2013) (20)
- Lattice‐matched single‐crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular‐beam epitaxy (1984) (20)
- Growth and fabrication of InGaNP-based yellow-red light emitting diodes (2006) (20)
- Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals (1996) (20)
- Low-loss 1.3-/spl mu/m MQW electroabsorption modulators for high-linearity analog optical links (1998) (20)
- Zinc Oxide Nanorods Shielded with an Ultrathin Nickel Layer: Tailoring of Physical Properties (2016) (20)
- Enhanced conversion efficiency in wide-bandgap GaNP solar cells (2015) (20)
- Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy (1999) (20)
- Vertically aligned ZnO nanorods on flexible substrates for multifunctional device applications: Easy and cost-effective route (2014) (20)
- Gas-source molecular beam expitaxy of GaInNP/GaAs and a study of its band lineup (2001) (20)
- Deep center photoluminescence study of low‐temperature InP grown by molecular beam epitaxy (1992) (19)
- Erratum: Evidence for Macroscopic Quantum Tunneling of Phase Slips in Long One-Dimensional Superconducting Al Wires [Phys. Rev. Lett. 97, 017001 (2006)] (2007) (19)
- Studies of band alignment and two-dimensional electron gas in InGaPN∕GaAs heterostructures (2005) (19)
- Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides (2004) (19)
- Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures (1998) (19)
- Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies. (2015) (19)
- A 10-GHz frequency divider using selectively doped heterostructure transistors (1984) (19)
- Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: Insight into the dominant mechanism for giant band-gap bowing (2004) (19)
- Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence (2003) (19)
- Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy : An optically detected magnetic resonance study (2008) (19)
- Improved high-temperature performance of 1.3-1.5-/spl mu/m InNAsP-InGaAsP quantum-well microdisk lasers (1997) (19)
- Measurement of Spin-Exchange Effects in Electron-Hydrogen Collisions: 90° Elastic Scattering from 4 to 30 eV (1982) (19)
- Optimizing GaNP coaxial nanowires for efficient light emission by controlling formation of surface and interfacial defects. (2015) (18)
- High resolution x‐ray diffraction studies of AlGaP grown by gas‐source molecular‐beam epitaxy (1995) (18)
- Efficient nitrogen incorporation in ZnO nanowires (2015) (18)
- Electron spin filtering by thin GaNAs/GaAs multiquantum wells (2010) (18)
- Raman spectroscopy of GaP/GaNP core/shell nanowires (2014) (18)
- Alloy states in dilute GaAs1-xNx alloys (x<1%) (2003) (18)
- Optical properties of GaNAs/GaAs structures (2001) (18)
- A thermodynamic analysis of the growth of III–V compounds with two volatile group V elements by molecular-beam epitaxy (1998) (18)
- Strong room-temperature optical and spin polarization in InAs/GaAs quantum dot structures (2011) (18)
- Magneto-optics of the fractional quantum hall effect (1988) (18)
- Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy (1999) (18)
- Vibrational properties of the H-N-H complex in dilute III-N-V alloys : Infrared spectroscopy and density functional theory (2008) (18)
- Growth of GaInNAs quaternaries using a digital alloy technique (2002) (18)
- Ultranarrow AuPd and Al wires (2004) (18)
- Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy (2007) (17)
- MICROSTRUCTURES OF GAN1-XPX LAYERS GROWN ON (0001)GAN SUBSTRATES BY GAS SOURCE MOLECULAR BEAM EPITAXY (1999) (17)
- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/Al x Ga 1−x As quantum wells (1989) (17)
- Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode (2014) (17)
- Surface kinetics of chemical beam epitaxy of GaAs (1990) (17)
- Effects of Ni-coating on ZnO nanowires: A Raman scattering study (2013) (16)
- Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy (2012) (16)
- Identification of Ga-interstitial defects in GaNyP1-y and AlxGa1-xNyP1-y (2004) (16)
- Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition (2017) (16)
- Defect properties of ZnO nanowires revealed from an optically detected magnetic resonance study (2013) (16)
- Heavily carbon-doped p-type GaAs and In0.53Ga0.47As grown by gas-source molecular beam epitaxy using carbon tetrabromide (1994) (16)
- InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas‐source molecular beam epitaxy (1994) (16)
- High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links (1996) (16)
- Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor (1985) (16)
- Optically detected magnetic resonance studies of low-temperature InP (1993) (16)
- Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen (2004) (15)
- Modeling of band gap properties of GaInNP alloys lattice matched to GaAs (2006) (15)
- A novel material for long-wavelength lasers: InNAsP (1998) (15)
- Formation of Ga interstitials in (Al,In)yGa1−yNxP1−x alloys and their role in carrier recombination (2004) (14)
- GaN/sub 0.011/P/sub 0.989/-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates (2000) (14)
- Laser‐modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates (1988) (14)
- A study of Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs by reflection high-energy electron diffraction (1992) (14)
- High‐resolution x‐ray diffraction of InAlAs/InP superlattices grown by gas source molecular beam epitaxy (1991) (14)
- Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy (2009) (14)
- Realization of sub-10 picosecond switching times in selectively doped (Al,Ga)As/GaAs heterostructure transistors (1984) (14)
- InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy (1992) (14)
- Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction (1995) (14)
- Free carrier and/or exciton trapping by nitrogen pairs in diluteGaP1−xNx (2005) (14)
- Structural and electrical properties of lattice‐matched Ca0.44Sr0.56F2/GaAs structures grown by molecular beam epitaxy (1986) (14)
- Selective chemical etching of InP over InAlAs (1992) (14)
- Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy (1997) (14)
- Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys (2015) (13)
- High-quality ZnO nanorod based flexible devices for electronic and biological applications (2014) (13)
- Photoluminescence from the two‐dimensional electron gas at GaAs/AlGaAs single heterojunctions (1988) (13)
- Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes (2001) (13)
- Origin of the nitrogen-induced optical transitions inGaAs1−xNx (2003) (13)
- Growth of device quality GaAs by chemical beam epitaxy (1988) (13)
- A study of group-V desorption from GaAs and GaP by reflection high-energy electron diffraction in gas-source molecular beam epitaxy (1992) (13)
- Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires. (2015) (13)
- Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy (2000) (13)
- Growth studies of GaP on Si by gas-source molecular beam epitaxy (1996) (13)
- Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wells (1986) (13)
- A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces (1999) (13)
- Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy (1995) (13)
- Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor (2016) (12)
- Band anticrossing in GaP1-xNx alloys (2001) (12)
- An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine (1996) (12)
- Band anti‐crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes (2009) (12)
- Observation of enhanced photoluminescence in erbium‐doped semiconductor microdisk resonator (1995) (12)
- Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces (2000) (12)
- Above barrier doublets in GaAs/AlxGa1−xAs superlattices (1987) (12)
- Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxy (1996) (11)
- Properties of selectively doped heterostructure transistors incorporating a superlattice donor layer (1986) (11)
- Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0 0 0 1) (2007) (11)
- Spatial characteristics of GaAs, GaAs-like, and AlAs-like LO phonons in GaAs/AlxGa1−xAs superlattices: The strong x dependence (1994) (11)
- Pressure behavior of the alloy band edge and nitrogen-related centers in Ga As 0.999 N 0.001 (2005) (11)
- The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films (2011) (11)
- Effects of Nitrogen Incorporation on Structural and Optical Properties of GaNAsP Nanowires (2017) (11)
- 38 GHz bandwidth 1.3 /spl mu/m MQW electroabsorption modulators for RF photonic links (1998) (11)
- Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992) (10)
- Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy (1999) (10)
- An optical study of the lateral motion of two-dimensional electron-hole pairs in GaAs/AlGaAs quantum wells (1993) (10)
- Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE (1997) (10)
- Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molelcular beam epitaxy (1993) (10)
- Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy (1993) (10)
- Study of interfaces in GaInSb/InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping (1999) (10)
- Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy (2016) (10)
- Growth and characterization of GaInNP grown on GaAs substrates (2002) (10)
- Photoluminescence of nitrogen‐doped ZnO (2006) (10)
- Nitrogen-Induced Perturbation of the Valence Band States in GaP1-xNx Alloys (2006) (10)
- Effects of Ga doping on optical and structural properties of ZnO epilayers (2009) (10)
- Photoluminescence upconversion in GaInNP/GaAs heterostructures grown by gas source molecular beam epitaxy (2006) (10)
- Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources (1995) (10)
- Amber GaNP-based light-emitting diodes directly grown on GaP(100) substrates (2006) (10)
- Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1- xNx alloys : A microphotoluminescence study (2006) (10)
- Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy (2007) (10)
- Growth and characterization of GaP/GaNP core/shell nanowires (2013) (10)
- Reflection high‐energy electron‐diffraction study of metalorganic molecular‐beam epitaxy of GaAs using trimethylgallium and arsenic (1990) (9)
- Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors (1995) (9)
- STRONG EFFECTS OF CARRIER CONCENTRATION ON THE FERMI-EDGE SINGULARITY IN MODULATION-DOPED INP/INXGA1-XAS HETEROSTRUCTURES (1997) (9)
- Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy (1999) (9)
- Phase coherence and line broadening of free excitons in GaAs quantum wells (1986) (9)
- Effects of weak ordering of InGaPN (2005) (9)
- Annealing behavior of p-type Ga[sub 0.892]In[sub 0.108]N[sub x]As[sub 1−x] (0≤X≤0.024) grown by gas-source molecular beam epitaxy (1999) (9)
- GaP/GaNP Heterojunctions for Efficient Solar-Driven Water Oxidation. (2017) (9)
- Enhancement of effective Schottky barrier height on n-type InP (1992) (9)
- Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering (2014) (9)
- Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy (2002) (9)
- Feasibility of enhancing the thermoelectric power factor in GaNxAs1−x (2012) (9)
- Investigation of p-type GaInNAs for heterojunction bipolar transistor base layers (1999) (8)
- Activation energies of fundamental and higher order states in the fractional quantum Hall effect (1986) (8)
- Temperature dependence of optical properties of Ga0.3In0.7NxAs1-x quantum dots grown on GaAs (001) (2004) (8)
- Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wells (1996) (8)
- InP and InAsP/InP heterostructures grown on InP (111)B substrates by gas-source molecular beam epitaxy (1993) (8)
- Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers (2018) (8)
- Heteroepitaxial growth of InP/In0.52Ga0.48As structures on GaAs (100) by gas‐source molecular beam epitaxy (1993) (8)
- A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures (1998) (8)
- Nonlinear high‐frequency response of GaAs metal‐semiconductor field‐effect transistors (1986) (8)
- Intrawell exciton transport in monolayer‐flat GaAs/AlGaAs single quantum wells grown by molecular‐beam epitaxy (1988) (8)
- A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic (1995) (8)
- Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl) (1999) (8)
- Evolution of the GaN x P 1 − x alloy band structure: A ballistic electron emission spectroscopic investigation (2002) (8)
- Effect of postgrowth hydrogen treatment on defects in GaNP (2011) (8)
- Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain‐balanced quantum wells (1996) (8)
- Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy (2006) (8)
- Standing charge density waves driven by electron drift in patterned (Al, Ga)As/GaAs heterostructures (1985) (8)
- Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy (2005) (7)
- Enhanced exciton mobilities in GaAs/AlGaAs and InGaAs/InP quantum wells (1992) (7)
- The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature (2012) (7)
- N incorporation in GaNxP1 − x and InNxP1 − x using a RF N plasma source (1997) (7)
- Improved Light Extraction of GaN-Based Green Light-Emitting Diodes with an Antireflection Layer of ZnO Nanorod Arrays (2011) (7)
- Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures. (2015) (7)
- Broadband and high‐reflectivity mirror using (Al,Ga)As/(Ca,Sr)F2 multilayer structures grown by molecular beam epitaxy (1986) (7)
- Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires (2017) (7)
- Gas-source molecular beam epitaxial growth and characterization of InNxP1−x on InP (1997) (7)
- Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires (2017) (7)
- Functional Coatings: Sputtered NiOx Films for Stabilization of p+n‐InP Photoanodes for Solar‐Driven Water Oxidation (Adv. Energy Mater. 11/2015) (2015) (7)
- Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance (2001) (7)
- Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures (2012) (7)
- Temperature behavior of the GaNP band gap energy (2003) (7)
- Room-temperature yellow–amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(1 0 0) substrates (2005) (7)
- Radiative recombination of GaInNP alloys lattice matched to GaAs (2006) (7)
- Optical detection of quantum oscillations in InP/InGaAs quantum structures (1996) (7)
- The effects of arsenic overpressure in metalorganic molecular beam epitaxy of GaAs and InAs (1990) (7)
- A novel all-optical bistable device in a noninterferometric double p-i(ESQW's)-n diode structure (1996) (7)
- The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy (2009) (6)
- Comparison of Au contacts to Si, GaAs, InxGa1 − xP, and ZnSe measured by ballistic electron emission microscopy (1996) (6)
- Growth study of chemical beam epitaxy of GaNxP1−x using NH3 and tertiarybutylphosphine (1996) (6)
- Growth of InAs on GaAs (001) by migration-enhanced epitaxy (1990) (6)
- Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study (2013) (6)
- Valence band offset of GaAs/GaAs0.68P0.32 multiple quantum wells (1993) (6)
- The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP (2004) (6)
- Material Properties of III–V Semiconductors for Lasers and Detectors (2003) (6)
- Photoluminescence from two dimensional electrons at single heterojunctions (1987) (6)
- Growth, etching, doping and effects of Ar+ laser irradiation in chemical beam epitaxy of GaAs with novel precursors (1996) (6)
- Summary Abstract: Surface‐etching kinetics of hydrogen plasma on III‐V compound semiconductors (1983) (6)
- Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP (2002) (6)
- p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy (1995) (6)
- Atomic-scale compositional structure of InAsP/InP and InNAsP/InP heterostructures grown by molecular-beam epitaxy (1998) (6)
- Defects in dilute nitrides: significance and experimental signatures (2004) (6)
- Planar semiconductor lasers using the photoelastic effect (1998) (6)
- Efficient room-temperature spin detector based on GaNAs (2012) (6)
- Efficiency of spin injection in novel InAs quantum dot structures: exciton vs. free carrier injection (2010) (6)
- Selective‐area epitaxy of carbon‐doped (Al)GaAs by chemical beam epitaxy (1995) (6)
- In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic (1997) (6)
- Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy (1991) (5)
- IIA-2 selectively doped heterostructure transistors for ultra high-speed integrated circuits (1984) (5)
- Single-crystal zincblende GaN grown on GaP (1 0 0) substrate by molecular beam epitaxy (2003) (5)
- Visible wavelength (6470 Å) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996) (5)
- A differential reflection high energy electron diffraction measurement system (1991) (5)
- 11 ps ring oscillators with submicrometre selectively doped heterostructure transistors (1985) (5)
- Growth and characterization of strain-compensated InAsPGaInP and InGaAsGaInP multiple quantum wells (1995) (5)
- Modeling study of silicon incorporation from SiBr4 in GaAs layers grown by chemical beam epitaxy (1998) (5)
- Excitation power dependent photoluminescence of In0.7Ga0.3As1-xNx quantum dots grown on GaAs (001) (2005) (5)
- Radiation hard blocked tunneling band GaAsAlGaAs superlattice long wavelength infrared detectors (1996) (5)
- In situ etching using a novel precursor of tertiarybutylchloride (TBCl) (2000) (5)
- Room temperature spin filtering effect in GaNAs: Role of hydrogen (2011) (5)
- The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits (1985) (5)
- Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x=0.1%) (2006) (5)
- Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas‐source molecular beam epitaxy (1995) (5)
- Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy (2007) (5)
- Low-Temperature Growth and Characterization of InP Grown by Gas-Source Molecular-Beam Epitaxy (1991) (5)
- Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots (2012) (5)
- Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic (1994) (5)
- Self-catalyzed core-shell GaAs/GaNAs nanowires grown on patterned Si (111) by gas-source molecular beam epitaxy (2017) (5)
- THz transient photoconductivity of the III–V dilute nitride GaPyAs1−y−xNx (2018) (4)
- Summary Abstract: Elimination of low‐temperature drain I–V collapse of selectively doped (Al,Ga)As/GaAs heterostructure transistors by a modulation‐doped superlattice donor layer (1985) (4)
- Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP (2006) (4)
- Growth and characterization of GaAs grown by metalorganic molecular-beam epitaxy using trimethylgallium and arsenic (1990) (4)
- Accurate de-embedding technique for on-chip small-signal characterization of high-frequency optical modulator (1996) (4)
- Experimental study of efficiency-bandwidth tradeoff of electroabsorption waveguide modulators for microwave photonic links (1997) (4)
- Origin of bandgap bowing in GaNP alloys (2004) (4)
- A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam Source (1996) (4)
- Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4 (1998) (4)
- Non-Contact Temperature Measurement with Infrared Interferometry (1994) (4)
- Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom? (2007) (4)
- Room-temperature spin injection and spin loss across a GaNAs/GaAs interface (2011) (4)
- Synthesis of highly strained InyGa1 − yP/InxGa1 − xAs/InyGa1 − yP quantum well structures with strain compensation (1996) (4)
- Metastability of the phosphorus antisite defect in low-temperature InP (2000) (4)
- Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices (2005) (4)
- Effects of strain on the growth and properties of CuInSe2 epitaxial films (1997) (4)
- ORDERING AND MICROSTRUCTURES OF GAN1-XASX LAYERS GROWN ON (0001) GAN/SAPPHIRE SUBSTRATES (1999) (4)
- Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substrates (1998) (4)
- Applications of defect engineering in InP-based structures (2000) (4)
- Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate (2005) (4)
- Defect properties of ZnO nanowires (2014) (4)
- Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study (2012) (4)
- Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence (2019) (4)
- Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies (2002) (3)
- Molecular-beam epitaxial growth of (Al,Ga)As/(Ca,Sr)F2 multilayer structures as a broad-band high-reflectivity mirror☆ (1987) (3)
- Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy (1990) (3)
- Nitrogen-Induced Evolution of GaAs1-xNx Studied by Ballistic Electron Emission Spectroscopy (2000) (3)
- Pseudomorphic AlInP/InP heterojunction bipolar transistors (1995) (3)
- Performance scaling and subnanosecond switching of symmetric self-electrooptic effect devices (1989) (3)
- Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires (2020) (3)
- Effect of nitrogen on the band structure of III-N-V alloys (2000) (3)
- AlGaAs/GaAs HBTs with extrinsic base regrowth (1998) (3)
- Enhancement of the performance of GaP solar cells by embedded In(N)P quantum dots (2015) (3)
- Hole tunneling in GaAs/AlGaAs heterostructures: coherent versus incoherent resonant tunneling (1990) (3)
- Growth studies of GaAsP in gas‐source molecular beam epitaxy (1992) (3)
- Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping (2001) (3)
- Next Generation Thin Films for Photovoltaics: InGaAsN (1999) (3)
- A study of metalorganic molecular beam epitaxy growth of InAs by mass spectrometry and reflection high-energy electron diffraction (1990) (3)
- Chemical beam epitaxy of AlAs using novel group-V precursors (2000) (3)
- P2-induced P/As exchange on GaAs during gas-source molecular beam epitaxy growth interruptions (1996) (3)
- ZnO/ITO core/shell nanostructure electrodes for future prototype solar cell devices (2015) (3)
- Group-V composition control for InGaAsP grown by gas source molecular beam epitaxy (1994) (3)
- Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN (2001) (3)
- Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism (2014) (3)
- Yellow emission (573.5 nm) Ga/sub 0.65/In/sub 0.35/P lasers grown on GaAs/sub 0.6/P/sub 0.4/ substrates by gas source molecular beam epitaxy (1994) (3)
- The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells (1991) (2)
- Molecular-beam epitaxy and related growth techniques (1995) (2)
- Electronic materials growth: A retrospective and look forward (2003) (2)
- Unusual carrier thermalization in a dilute GaAs1−xNx alloy (2007) (2)
- Phase nonlinearity of buried-layer GaAs MESFET's (1984) (2)
- Growth and characterization of AlGaNP on GaP(100) substrates (2006) (2)
- Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current (2016) (2)
- Highly strained InxGa1−xPGaP quantum wells grown on GaP and on an Inx2Ga1−x2P buffer layer by gas-source molecular beam epitaxy (1996) (2)
- Evaluation of temperature rise on semiconductor surfaces associated with scanning Ar+ lasers (2000) (2)
- Two-dimensional electron-hole pair diffusivities in thin GaAs/AlGaAs Quantum Wells (1993) (2)
- Partially doped GaAs single-quantum-well FET (1989) (2)
- Identification of Ga interstitials in GaAlNP (2003) (2)
- Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP (1993) (2)
- Reflection High-Energy Electron Diffraction Study of Arsenic Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs (1994) (2)
- Photoluminescence excitation and resonance Raman spectroscopy of unconfined transitions in superlattices (1988) (2)
- Efficient Nitrogen Incorporation in ZnO Nanowires by Unintentional Doping (2015) (2)
- Wannier Excitons at GaAs Surfaces and in Thin GaAs Layers (1988) (2)
- Hydrogen-related effects in diluted nitrides (2003) (2)
- Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiation (1989) (2)
- Growth and Characterization of Vertically Aligned ZnO Hierarchical Nanostructures (2013) (2)
- A reaction model for chemical beam epitaxy with triethylgallium and tris(dimethylamino)arsenic (2000) (2)
- Strain relaxation in GaNxP1−x alloy: effect on optical properties (2001) (2)
- Similarities between Ga0.48In0.52NyP1−y and Ga0.92In0.08NyAs1−y grown on GaAs (001) substrates (2004) (2)
- Material optimization for a polarized electron source from strained GaAs:Be grown on an InGaP pseudosubstrate (1996) (2)
- 1-D photonic-band-gap structure along photonic wire (1996) (2)
- Selected Area Growth of GaAs by Laser Induced Pyrolysis of Adsorbed Ga-Alkyls (1988) (2)
- Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP (2015) (2)
- Novel optoelectronic materials: GaInNAs and Ga(In)NP (2000) (2)
- Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs (2015) (2)
- Measurement of charge-separation potentials in GaAs1−xNx (2003) (2)
- Phase Relaxation of Two-Dimensional Excitons in a GaAs Single Quantum Well (1988) (2)
- IIIA-2 gate capacitance and saturated drift velocity in selectively doped heterojunction transistors (1984) (2)
- Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy (1996) (1)
- Summary Abstract: Molecular‐beam epitaxial growth of lattice‐matched GaAs/(Ca, Sr)F2/Ge(100) heterostructures (1988) (1)
- Intrinsic modulation doping in InP-based structures: properties relevant to device applications (1999) (1)
- Effect of subband mixing and subband dispersion on the exciton line shape of superlattices (1990) (1)
- Chemical Beam Epitaxy of InP with Ar + Laser Irradiation (1999) (1)
- Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap (2001) (1)
- Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A. (1993) (1)
- Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures (1999) (1)
- Optical Detection of Cyclotron Resonance (ODCR) in GaNAs/GaAs Quantum Well Structures (2000) (1)
- Semiconductor Superlattices: Order and Disorder (1987) (1)
- Simulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsine (1998) (1)
- Experimental and numerical studies of Ar+-laser-assisted Si doping of GaAs with SiBr4 by chemical beam epitaxy (2000) (1)
- Electronic Structure of PIn Antisite in InP (1993) (1)
- Optical spin injection and spin detection in novel InAs quantum dot structures. (2011) (1)
- Spectral Blue-Shifts in Optical Absorption and Emission of the 2D Electron System in the Magnetic Quantum Limit (1989) (1)
- Two-Dimensional Systems: Physics and New Devices, Edited by G. Bauer, F. Kuchar, and H. Heinrich (Springer-Verlag, 1986) (1987) (1)
- III-N-V: a novel material system for lasers with good high-temperature characteristics (1998) (1)
- Broad Tuning of the Photoluminescence Energy and Lifetime by the Quantum-Confined Stark Effect (1986) (1)
- Study on interface abruptness of InxGa1−xAs/InyGa1−yAszP1−z heterostructures grown by gas‐source molecular beam epitaxy (1996) (1)
- Picosecond phase coherence and orientational relaxation of Wannier excitons in GaAs (1986) (1)
- Alloy states in dilute GaAs 1-x N x alloys (x<1%) (2003) (1)
- Chemical beam epitaxy and laser-modified chemical beam epitaxy of InGaAs using tris-dimethylaminoarsenic (1995) (1)
- Optical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxy (2005) (1)
- High-efficiency 1.3-um multiple quantum well electroabsorption waveguide modulators for microwave photonic links (1996) (1)
- Chemical Beam Epitaxy Of Ganxpi- Using A N Radical Beam Source (1996) (1)
- Heavily nitrogen-doped III-V semiconductors for high-efficiency solar cells (2000) (1)
- Optical Dephasing of Wannier Excitons in GaAs (1988) (1)
- Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure (2006) (1)
- Low-Temperature Micro-PL Measurements of InAs Binary Quantum Dots on GaAs Substrate (2007) (1)
- Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopy (1996) (1)
- Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys (2006) (1)
- Modulator Structure Using In(As, P)/lnP Strained Multiple Quantum Wells Grown By Gas-Source MBE (1991) (1)
- Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures (1997) (1)
- Summary Abstract: Molecular‐beam epitaxial growth of (Al,Ga) As/GaAs heterostructures with interruption at interfaces (1987) (1)
- Optical studies and defect properties of GaP/GaNP core/shell nanowires (2012) (1)
- P-N defect in GaNP studied by optically detected magnetic resonance (2003) (1)
- TEM-Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE Grown GaAs/AlGaAs (1989) (1)
- Characterization of GaAs/GaAsP strained multiple quantum wells grown by gas‐source molecular beam epitaxy (1993) (1)
- Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy (2006) (1)
- Low-Loss and Efficient InAsP/GalnP MQW Electroabsorption Waveguide Modulators for Analog Fiber-Optic Links (1998) (1)
- METALORGANIC MOLECULAR-BEAM EPITAXY: GROWTH KINETICS AND SELECTIVE-AREA EPITAXY (1991) (1)
- The effects of laser irradiation on InGaAs/GaAs multiple quantum wells grown by metalorganic molecular beam epitaxy (1995) (1)
- Novel Measurement of the Band Discontinuities in (Al,Ga)As Heterojunctions (1985) (1)
- THE DEPENDENCE OF AlGaAs/GaAs MODFET ISOLATION ON MATERIAL AND DEVICE STRUCTURE (1987) (1)
- Study on improving InxGa1−xAs/InyGa1−yP heterointerfaces in gas‐source molecular beam expitaxy (1996) (1)
- Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors (1991) (1)
- Strain-compensated InAsP/GaInP multiple-quantum-well waveguide modulators and in situ monitored AlGaAs/AlAs mirrors grown by gas-source molecular beam epitaxy (1997) (1)
- Summary Abstract: Electron stimulated interaction of water vapor with InP (1982) (1)
- Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993) (1)
- STRUCTURAL AND OPTICAL CHARACTERIZATIONS OF INASP/INP STRAINED MULTIPLE QUANTUM WELLS GROWN ON INP (111)B SUBSTRATES (1994) (1)
- New Insight into the Electronic Properties of GaNP Alloys (2005) (1)
- Raman Studies of GaNP Alloy (2001) (1)
- Effect of thermal annealing on defects in post-growth hydrogenated GaNP (2013) (1)
- Localized Doping Enhancement by Photon-Assisted Chemical Beam Epitaxy (1999) (1)
- The roles of group-V species in metalorganic molecular-beam epitaxy and chemical-beam epitaxy of III–V compounds (1991) (1)
- Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas (1995) (1)
- Role of nitrogen in photoluminescence up-conversion in GaInNP/GaAs heterostructures (2007) (1)
- Strong suppression of spin generation at a Fano resonance in a semiconductor nanostructure (2012) (1)
- Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A. (1994) (1)
- Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic (1997) (1)
- On a possible origin of the 2.87 eV optical transition in GaNP (2006) (1)
- Lattice-Matched Gaas/Ca 0.45 Sr 0.55 F 2 /Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy (1987) (1)
- Single-crystal zincblende GaN growth on GaP[100] substrate in molecular beam epitaxy (2002) (1)
- Optimization of room-temperature defect-engineered spin filtering effect in Ga(In)NAs : rate equation studies (2012) (0)
- Effect of post-growth hydrogen treatment and annealing on spin filtering functionality in Ga(In)NAs alloys (2012) (0)
- Growth, doping, and etching of GaAs and InGaAs using tris-dimethylaminoarsenic (1997) (0)
- Unintentional Nitrogen Doping in ZnO Nanowires Revealed by Electron Paramagnetic Resonance Spectroscopy (2014) (0)
- GaNP nanowires – a novel material system for solar cell applications (2014) (0)
- Spin properties in InAs/GaAs quantum dot structures : Invited talk at the Second Int. Conf. on Small Science (ICSS 2012), Orlando, USA, Dec.16-19 2012. (2012) (0)
- Recombination processes in GaP/GaNP core/shell nanowires. (2013) (0)
- Unusual effects of hydrogen in GaNP alloys : A general property of dilute nitrides (2005) (0)
- The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates (1999) (0)
- Disorder-Activated Resonant Raman Scattering in GaNAs/GaAs Structures (2001) (0)
- InNAsP microdisk lasers lasing above room temperature (1997) (0)
- Unintentional nitrogen incorporation in ZnO nanowires detected by electron paramagnetic resonance spectroscopy (2016) (0)
- Formation of an isoelectronic impurity band in heavily doped GaP:N and GaAs:N and the quantum confinement of electrons in the impurity band (2000) (0)
- Optical properties of isoelectronically P-doped GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy (2002) (0)
- Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy (1998) (0)
- Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures (1999) (0)
- Efficient upconversion of photoluminescence via two-photon absorption in bulk and nanorod ZnO (2012) (0)
- Optical Properties and Defect Formation in Gallium Phosphide/Gallium Nitrogen Phosphide Core/Shell Nanowires (2014) (0)
- Subband-dispersion and subband-mixing effects on excitonic spectra in thin-barrier superlattices (1990) (0)
- Exploring room-temperature spin functionality in non-magnetic semiconductor nanostructures. : Invited talk at the 5th IEEE International Nanoelectronics Conference (IEEE INEC 2013), Singapore, Jan.2-4, 2013. (2013) (0)
- Important grown-in defects in novel dilute nitride (Al,In)GaNP : Ga interstitials (2005) (0)
- Defect-enabled Room-temperature Spin Functionality in Ga(In)NAs (2012) (0)
- Optically detected magnetic resonance investigation of GaP and GaP/GaNP/GaNP Nanowires (2013) (0)
- A New type of Graded Buffer Layer for Gas-Source Molecular Beam Epitaxial Growth of Highly Strained IN x GA 1−X P/GAP Multiple Quantum Wells on Gap (1995) (0)
- The Investigation of Impurity Distributions around an Oval Defect (1988) (0)
- Gas-Source molecular beam epitaxy and characterization of inGaAs/lnGaAsP quantum well structures on InP (1996) (0)
- Compensating-Stress InAs Quantum Wells for High-Performance Electronic Devices (1990) (0)
- GROWTH OF SINGLE-CRYSTALLINE EPITAXIAL GROUP II FLUORIDE FILMS ON INDIUM PHOSPHIDE(001) BY MOLECULAR-BEAM EPITAXY (1984) (0)
- Design of millimeter wave optical modulators with monolithically integrated narrowband impedance matching circuits for 1.3-um photonic links (1996) (0)
- Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength (1995) (0)
- Hanle effect and electron spin polarization in InAs / GaAs quantum dots up to room temperature 1 1 Hanle effect and electron spin polarization in InAs / GaAs quantum dots up to room temperature (2012) (0)
- GaP/GaNP core/shell nanowires - a novel material system for optoelectronics and photonics (2014) (0)
- Improved electroabsorption properties in 1.3 μm MQW waveguide modulators by a modified doping profile (1997) (0)
- Production of semiconductor devices with the III-V compound semiconductors (1986) (0)
- Optical study of localized and delocalized states in GaAsN/GaAs (2003) (0)
- Growth and Optical Properties of GaNxP1-x/GaNyP1-y Core/Shell Nanowires Grown by Gas-Source Molecular Beam Epitaxy (2014) (0)
- InAsP/InP strained quantum wells grown by gas-source molecular-beam epitaxy on InP(100) and (111)B substrates (1994) (0)
- Spin-blockade of dominant non-radiative carrier recombination channels via defects in Ga(In)NAs alloys (2010) (0)
- Band line-up in novel GaInNP/GaAs heterostructures (2006) (0)
- Effects of thermal annealing on InAsP/GaInP strain-compensated multiple quantum wells (1998) (0)
- Strained semiconductor structures for polarized electrons (1998) (0)
- GaInNAs Structures Grown by MBE for High-Efficiency Solar Cells: Final Report; 25 June 1999--24 August 2002 (2003) (0)
- Room-temperature defect-enabled electron spin amplifier in a non-magnetic semiconductor (2013) (0)
- Signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate from magnetic resonance studies (2006) (0)
- Influence of electric fields on the carrier lifetime in quantum wells (1986) (0)
- A study of Ar+ laser-assisted Si doping of GaAs by chemical beam epitaxy (2000) (0)
- Disorder-activated resonant Raman scattering in GaNAs/GaAs quantum structures (2001) (0)
- n a No~~~t~rf~~o~~t~ c Double (1996) (0)
- Bandgap engineering of GaInNP on GaAs(001) for electronic applications (2004) (0)
- Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990. (1991) (0)
- Characterisation of GaNP Layers Grown on (0001) GaN/Sapphire by Gas Source Molecular Beam Epitaxy (1998) (0)
- Photoelastic Waveguides Using Strain-Compensated InAsP/InGaP Multi-Quantum-Wells (1995) (0)
- Understanding the electronic properties of dilute nitrides relevant to optoelectronic applications (2003) (0)
- Chapter 3 – MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES (1995) (0)
- Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics (2016) (0)
- An optically detected magnetic resonance study of effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys (2012) (0)
- Hanle effect in InAs/GaAs quantum dots up to room temperatures (2011) (0)
- Time-resolved studies of photoluminescence in GaNP epilayers and multiple quantum well structures (2002) (0)
- Phase coherence of excitons in bulk GaAs (1987) (0)
- Gas-Source Molecular Beam Epitaxy Growth and Characterization of GaNP/GaP Structures (2000) (0)
- RHEED Study of Ar Ion Laser-Assisted Metalorganic MBE of GaAs (1992) (0)
- Long-wavelength emission of Ga0.3In0.7NxAs1-x quantum dots grown on GaAs(001) (2003) (0)
- Gas-source MBE Growth Of III-V Compound Semiconductors (1991) (0)
- Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures (2008) (0)
- Effects of grown‐in defects on electron spin polarization in dilute nitride alloys (2008) (0)
- Electronic structure of GaNP alloys : Insights from optical studies (2003) (0)
- Control of exciton fine-structure splitting in geometrically engineered self-assembled InAs/GaAs quantum molecular structures (2014) (0)
- Band-mixing excitons in superlattices (1990) (0)
- Enhancement of the Radiative Lifetime of 2D Excitons in a GaAs Quantum Well by Dephasing Collisions (1989) (0)
- Electronic and Optical Properties of Deep Donors in Hydrogenated AlxGa1-xAs:Si. (1989) (0)
- Non-linear Current-Voltage Dependence of the Superconducting Transition in 1-D Ultranarrow Al wires (2005) (0)
- GaAs heterostructure FET frequency dividers fabricated with high-yield 0.5 mu m direct-write trilevel-gate-resist (1989) (0)
- Resonant excitation spectroscopies of GaNAs/GaAs quantum structures (2000) (0)
- fficiency 1.3 pm InAsP-GaIn tion Wavegui rs for Microwave Fiber-optic Links (1996) (0)
- Physics and Technology of III-V Pseudomorphic Structures. (1990) (0)
- Investigation of indium surface segregation in solid source MBE growth of InxGa1-xSb (1999) (0)
- Optical properties and defect formation in GaP/GaNP core/shell nanowires (2014) (0)
- Band alignment in the GaNAs/GaAs quantum structures (2001) (0)
- Electronic structure of GaNP: Insights from optical studies (2003) (0)
- Properties of a grown-in intrinsic defect in GaNAs (2001) (0)
- Spin-engineered suppression of dominant non-radiative shunt paths in Ga(In)NAs relevant to photovoltaic applications (2010) (0)
- Grown-in defects in molecular beam epitaxial ZnO (2007) (0)
- Plasmonic effects in ZnO/Ni core-shell nanowires. (2013) (0)
- Picosecond Relaxation of Nonthermal Wannier Excitons in GaAs (1986) (0)
- Superconducting ultra narrow Al nanowires (2005) (0)
- InAs/GaAs quantum dots as highly polarized spin and light sources and efficient spin detectors at room temperature. (2012) (0)
- Band alignment in novel GaInNP/GaAs heterostructures. (2007) (0)
- Preferential formation of nitrogen clusters in GaNP nanowires probed by polarization resolved μ-photoluminescence (2014) (0)
- Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint (1999) (0)
- Efficient upconversion of photoluminescence in bulk and nanorod ZnO (2012) (0)
- Second-harmonic generation from tetragonal chalcopyrite-structure semiconductor thin films (1996) (0)
- Effect of Growth Conditions on the Photoluminescence of GaNAs/GaAs Quantum Structures (1999) (0)
- Ultrafast Dynamics of Excitons in GaAs Single Quantum Wells (1989) (0)
- Compositional Dependence of conduction band states in GaNP alloys (2004) (0)
- Gallium vacancies—common non-radiative defects in ternary GaAsP and quaternary GaNAsP nanowires (2020) (0)
- Feasibility of enhancing the thermoelectric power factor in GaN x As (2012) (0)
- Low-Temperature Grown III-V Semiconductors (1997) (0)
- Enabling small band-gap semiconductors for solar water oxidation using multifunctional NiOx coating (2015) (0)
- Optical Transitions in GaAsN Studied By Modulation Spectroscopy (2003) (0)
- Ga interstitials : usual grown-in defects with unusual room-temperature spin functionality in dilute nitrides (2013) (0)
- Summary Abstract: Excimer‐laser‐modified molecular‐beam epitaxy and metal–organic molecular‐beam epitaxy of (Al)GaAs on (Ca,Sr)F2/GaAs and GaAs substrates (1988) (0)
- Signatures of N incorporation in Raman and optical properties of GaP/GaNP core/shell nanowires (2013) (0)
- Ga-interstitial related defects in Ga(Al)NP (2005) (0)
- Optical and Microwave Double Resonance of III-nitrides (1999) (0)
- Valence band structure of GaAsN compounds and Band-edge line-up in GaAslGaAsNnnGaAs hetorosructures. (1999) (0)
- III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A. (1989) (0)
- Defects in GaNP Nanowires (2014) (0)
- Ga(In)NAs alloys - new promising material system for laser applications (2003) (0)
- Hydrogen Plasma Etching of III-V Compound Semiconductor Surfaces (1982) (0)
- Summary Abstract: Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular‐beam epitaxy (1984) (0)
- Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy (2002) (0)
- Fabrication of Al x Ga 1-x P waveguides with unusually smooth side walls for nonlinear optical applications (1994) (0)
- High performance photoelastic semiconductor laser and electroabsorption waveguide modulator (1998) (0)
- Unusual carrier thermalization in a dilute Ga As 1 − x N x alloy (2015) (0)
- Summary Abstract: Lattice‐matched single‐crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular‐beam epitaxy (1984) (0)
- Recombination Processes of GaNAs/GaAs structures: Effect of Rapid Thermal Annealing (2001) (0)
- Hyperfine-induced spin depolarization and dynamic nuclear polarization in InAs/GaAs quantum dots (2012) (0)
- Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy (1992) (0)
- Novel GaNP Nanowires for Advanced Optoelectronics and Photonics (2017) (0)
- Efficient room temperature spin filter based on GaNAs quantum wells (2009) (0)
- Optical and structural characterization of Ga-doped ZnO epilayers grown by plasma-assisted molecular-beam epitaxy (2008) (0)
- Vibrational spectroscopy of N-H2 complexes in GaPN (2005) (0)
- The effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates[Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition] (2000) (0)
- Vibrational spectroscopy of hydrogenated GaP1−yNy (2007) (0)
- Ga(In)NAs Dilute Nitride: An Unconventional Spintronic Semiconductor. (2014) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Carrier Lifetimes in a III-VN Intermediate-Band Semiconductor Permalink (2017) (0)
- Surface and interfacial defects in coaxial GaNP nanowires (2015) (0)
- nanorod based fl exible devices for electronic and biological applications † (2014) (0)
- Photo-Assisted Chemical Beam Epitaxy for Direct Write Epitaxy (1999) (0)
- Efficiency of spin injection in novel InAs quantum dots structures (2009) (0)
- Carrier Lifetimes in a GaPAsN Intermediate Band Semiconductor (2017) (0)
- Localized surface plasmon mediated emission from Ni coated ZnO nanowires (2012) (0)
- Grown-in intrinsic defect in GaNAs (2001) (0)
- Photonic-Wire Microcavity Ring Semiconductor Lasers (1995) (0)
- Issues in epitaxial growth of phosphides and antimonides (1996) (0)
- Activation of defects in GaNP by post-growth hydrogen treatment (2010) (0)
- Optical study of electronic states in GaAsN (2002) (0)
- - crystalline cubic structured tin ( II ) sul fi de ( SnS ) nanowires by chemical vapor deposition † (2017) (0)
- Summary Abstract: Growth of epitaxial semiconductor/dielectric/semiconductor double heterostructures by molecular beam epitaxy: InP/fluoride/InP(001) (1984) (0)
- roperties of Selectively Doped Heterostruc ransistors Incorporating a Superlattice Donor Layer (1986) (0)
- Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs (2015) (0)
- In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications (1996) (0)
- Enhanced Efficiency of Light Emission from ZnO/Ni Core/shell Nanowires: Effects of Surface Plasmons (2013) (0)
- Spin properties of InAs/GaAs quantum dot structures relevant to room-temperature spintronics (2013) (0)
- Influence of nitrogen on the band structure of GaP: a ballistic electron emission spectroscopic investigation (1993) (0)
- Dilute-nitride GaNP planar and core/shell microwire solar cells (2016) (0)
- Effects of N incorporation on Raman properties and band structure of GaP/GaNP core/shell nanowires (2013) (0)
- Electron Tunneling Times in Coupled Quantum Wells (1989) (0)
- Free-carriers beat excitons in spin-injection contest (2009) (0)
- Engineering spin-dependent carrier recombination processes in Ga(In)NAs for optoelectronic and photovoltaic applications (2011) (0)
- Raman scattering studies of Ni-coated ZnO nanorods (2012) (0)
- Generating strong electron spin polarization at room temperature in GaNAs via spin-dependent recombination (2008) (0)
- An investigation on the mechanisms reponsible for Ar + -laser induced growth enhancement of GaAs by chemical beam epitaxy (1999) (0)
- lnNAsP microdisk lasers lasing above room temperature (1997) (0)
- Spin functional non-magnetic semiconductors for future spintronics (2013) (0)
- Effect of in-plane anisotropy on spin injection efficiency in InAs/GaAs nanostructures revealed in a longitudinal magnetic field (2012) (0)
- Magnetooptical studies of III-N-V compound semiconductors (2002) (0)
- Optical characterization of novel GaInNP alloys (2007) (0)
- Using Gaseous Sources in Molecular Beam Epitaxy (1996) (0)
- Investigations on the mechanisms responsible for Ar+-laser-induced growth enhancement of GaAs by chemical beam epitaxy (2000) (0)
- Fundamental Band Gap in GaNP Alloys (2000) (0)
- P 5 . 1 Optical properties of isoelectronically Pdoped Gal \ Epilayers Grown by Gas Source Molecular Beam Epitaxy (2008) (0)
- How to Deactivate Harmful Defects and Active them for New Spin Functionalities in a Semiconductor (2015) (0)
- Growth and characterization of dilute nitride GaNxP 1 − x nanowires and GaNxP 1 − x / GaNyP 1 − y core / shell nanowires on Si ( 111 ) by gas source molecular beam epitaxy (2014) (0)
- Plans for Measurement of Parity Nonconservation in Elastic Scattering of Polarized Electrons by Nuclei at the Bates Linear Accelerator Center (1981) (0)
- Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F 2 /Gaas Substrates (1987) (0)
- Optical dephasing and transient grating experiments on 2-D excitons in GaAs single quantum wells (1987) (0)
- Effects of N incorporation on the electronic structure of GaNP : Origin of the 2.87 eV optical transition (2005) (0)
- Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy. (1993) (0)
- Room-temperature spin functionality in non-magnetic semiconductor thin films and quantum structures (2013) (0)
- Semiconducting nanocontacts: probe for spin-polarized injection? (2002) (0)
- On the Origin of Light Emission in GaNxP1-x (2002) (0)
- Collective Resonances in the Laterally Confined 2D Electron Gas (1985) (0)
- ding Technique for Small-signal Characterization requency ptical Modulator (1996) (0)
- Effects of Ni-coating on optical properties of ZnO/Ni core-shell nanowires (2012) (0)
- Studies of spin loss during room-temperature spin injection across a GaNAs/GaAs interface (2011) (0)
- “Erratum: Ultranarrow AuPd and Al wires” [Appl. Phys. Lett. 86, 172501 (2005)] (2007) (0)
- Heteroepitaxial ZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy (2005) (0)
- Effects of Laser Irradiation on Growth and Doping Characteristics of GaAs in Chemical Beam Epitaxy (1995) (0)
- Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures (1996) (0)
- Direct Observation of NN Pairs Transfer in GaP1-xNx （x=0.12%） (2005) (0)
- Recombination processes in GaNAs/GaAs structures (2001) (0)
- Carrier Dynamics in an Intermediate-Band Semiconductor by THz Transient Photoconductivity (2018) (0)
- Optical characterization of GaNAs (2001) (0)
- Ultrafast Studies of Resonant and Non-Resonant Electron and Hole Tunneling in Quantum Well Structures (1990) (0)
- A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy (1996) (0)
- Optical and electronic properties of GaNAs/GaAs structures (2000) (0)
- Effects of hydrogen on electronic and crystalline structure of GaNP (2004) (0)
- Enhanced Photoluminescence from Erbium-Doped Gap Microdisk Resonator (1995) (0)
- Quantum dot structures : limiting factors for spintronics (2012) (0)
- Materials and Structures for Advanced III-HBTs (1992) (0)
- Efficient Spin Filter Based on Non-Magnetic Semiconductor GaNAs (2009) (0)
- Large nonbiased optical bistability device in electroabsorption modulator using symmetric two p-i-n-i-p diode structures (1996) (0)
- Laser-modified chemical beam epitaxy of InGaAs/GaAs multiple quantum wells using tris-dimethylaminoarsenic (1994) (0)
- Activation of defects in GaNP by low-energy hydrogen treatment (2011) (0)
- Efficiency of hydrogen passivation of nitrogen in GaAsN and GaNP alloys (2007) (0)
- Novel GaNAs and GaNP-based nanowires — Promising materials for optoelectronics and photonics (2016) (0)
- High Energy Optical Transitions in Ga(PN): Contribution from Perturbed Valence Band (2005) (0)
- Intrinsic Modulation Doping in InP-Based Heterostructures (1997) (0)
- Role of hydrogen in improving optical quality of GaNAs alloys (2004) (0)
- Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures (2003) (0)
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What Schools Are Affiliated With Charles W. Tu?
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