Cheol Seong Hwang
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Computer Science
Cheol Seong Hwang's Degrees
- PhD Computer Science Stanford University
- Masters Computer Science Stanford University
- Bachelors Computer Science University of California, Berkeley
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(Suggest an Edit or Addition)Cheol Seong Hwang's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010) (1796)
- Multifunctional wearable devices for diagnosis and therapy of movement disorders. (2014) (1146)
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition (2005) (1061)
- Emerging memories: resistive switching mechanisms and current status (2012) (899)
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (2015) (645)
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook (2011) (561)
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature (2013) (453)
- Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p‐Type NiO Electrode Formed by a Pulsed Laser Deposition (2015) (433)
- Resistive switching materials for information processing (2020) (428)
- Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films (2007) (403)
- A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors (2011) (366)
- Identification of a determining parameter for resistive switching of TiO2 thin films (2005) (320)
- A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View (2014) (292)
- High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition (2004) (280)
- Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application (1995) (258)
- Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability (2014) (252)
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity (2014) (250)
- Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors (2008) (248)
- Review and perspective on ferroelectric HfO2-based thin films for memory applications (2018) (243)
- Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors (2011) (237)
- Memristors for Energy‐Efficient New Computing Paradigms (2016) (232)
- An artificial nociceptor based on a diffusive memristor (2018) (230)
- First-principles study on doping and phase stability of HfO2 (2008) (223)
- Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films (2007) (203)
- Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors (2008) (194)
- Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases. (2015) (181)
- First-principles study of point defects in rutileTiO2−x (2006) (180)
- Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory (2010) (176)
- Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure (2014) (173)
- A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure (2011) (168)
- Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots (2013) (164)
- A COMPARATIVE STUDY ON THE ELECTRICAL CONDUCTION MECHANISMS OF (BA0.5SR0.5)TIO3 THIN FILMS ON PT AND IRO2 ELECTRODES (1998) (157)
- Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films (2015) (156)
- Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films. (2018) (153)
- Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment. (2017) (153)
- Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. (2018) (152)
- Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer (2014) (144)
- Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant (2005) (144)
- 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (2013) (143)
- Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application. (2016) (142)
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes (2013) (142)
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film (2009) (142)
- Nonvolatile Memory Materials for Neuromorphic Intelligent Machines (2018) (140)
- Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes (2002) (135)
- Prospective of Semiconductor Memory Devices: from Memory System to Materials (2015) (134)
- Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films (1999) (133)
- Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films. (2016) (132)
- Low Temperature ( < 100 ° C ) Deposition of Aluminum Oxide Thin Films by ALD with O3 as Oxidant (2006) (131)
- Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash (2015) (128)
- Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations (2015) (128)
- A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays (2010) (126)
- Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures (2010) (125)
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement. (2016) (123)
- Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films (1999) (121)
- Atomic Layer Deposition for Semiconductors (2013) (115)
- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes (2014) (114)
- Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator (2003) (114)
- Metal oxide memories based on thermochemical and valence change mechanisms (2012) (113)
- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes (2014) (112)
- Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate (2002) (111)
- Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films (2000) (110)
- Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications (2008) (109)
- Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors (2011) (108)
- (Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.: A review on the process integration (1998) (107)
- Study on the resistive switching time of TiO2 thin films (2006) (107)
- Resistive Switching in Pt ∕ Al2O3 ∕ TiO2 ∕ Ru Stacked Structures (2006) (107)
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling (2015) (106)
- Chemical structure of the interface in ultrathin HfO2/Si films (2004) (105)
- Self‐Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance (2015) (103)
- Densification and mechanical properties of titanium diboride with silicon nitride as a sintering aid (2004) (102)
- Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition (2016) (102)
- Resistive switching memory: observations with scanning probe microscopy. (2011) (101)
- Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films. (2018) (99)
- Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films (2016) (97)
- Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant (2003) (96)
- Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films (2005) (92)
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides (2018) (89)
- Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing (2002) (89)
- Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates (2003) (84)
- Nociceptive Memristor (2018) (82)
- Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy (2010) (79)
- Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping (2019) (79)
- Deposition and Electrical Characterization of Very Thin SrTiO3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application (1995) (78)
- Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment (2011) (77)
- Modeling of Negative Capacitance in Ferroelectric Thin Films (2019) (76)
- (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array (2008) (76)
- Cyclic Damage in Lead Zirconate Titanate (1996) (75)
- All-printed triboelectric nanogenerator (2018) (74)
- Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition (2012) (74)
- Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments (2011) (73)
- Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell (2012) (72)
- Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System (2007) (72)
- Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory (2011) (71)
- Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor (2004) (70)
- Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM (2013) (70)
- Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition (2010) (67)
- Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors (2013) (66)
- Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes (1999) (66)
- Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation (2004) (66)
- Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition (2010) (65)
- Transformation of the Crystalline Structure of an ALD TiO2 Film on a Ru Electrode by O3 Pretreatment (2006) (65)
- Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers. (2016) (65)
- Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” (2017) (65)
- Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes (2006) (65)
- Fabrication and Electrical Characterization of Pt/(Ba,Sr)TiO3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications (1996) (65)
- Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films (2015) (64)
- Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory. (2015) (64)
- Investigation of barium titanate thin films on MgO substrates by second‐harmonic generation (1994) (64)
- Titanium dioxide thin films for next-generation memory devices (2013) (63)
- Growth Behavior of Al-Doped TiO2 Thin Films by Atomic Layer Deposition (2008) (63)
- Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors (2017) (62)
- Chemically Conformal ALD of SrTiO3 Thin Films Using Conventional Metallorganic Precursors (2005) (61)
- Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment (2012) (61)
- Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film (2016) (60)
- Local structure and conduction mechanism in amorphous In–Ga–Zn–O films (2009) (60)
- Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers (2020) (60)
- Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO2 films (2005) (59)
- Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering (2017) (59)
- Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination (2011) (59)
- Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates (2008) (59)
- The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films (2009) (59)
- Growth Characteristics of Atomic Layer Deposited TiO2 Thin Films on Ru and Si Electrodes for Memory Capacitor Applications (2005) (59)
- Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures (2017) (58)
- Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices. (2018) (57)
- Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes. (2014) (56)
- Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure. (2018) (55)
- Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate (2016) (55)
- Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode (2011) (55)
- The fundamentals and applications of ferroelectric HfO2 (2022) (55)
- Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory. (2016) (54)
- Cyclic PECVD of Ge2Sb2Te5 Films Using Metallorganic Sources (2007) (53)
- Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping (2010) (53)
- Role of ZrO2 incorporation in the suppression of negative bias illumination- induced instability in Zn-Sn-O thin film transistors (2011) (53)
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor (2003) (52)
- Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability (2007) (52)
- Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation. (2017) (52)
- Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell (2015) (51)
- Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments (2012) (50)
- Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition (2017) (49)
- Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films (2018) (49)
- Properties of lanthanum oxide thin films deposited by cyclic chemical vapor deposition using tris(isopropyl-cyclopentadienyl)lanthanum precursor (2006) (49)
- Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films (2009) (48)
- Epitaxial growth of BaTiO3 thin films at 600 °C by metalorganic chemical vapor deposition (1995) (48)
- A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices (2019) (47)
- Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr ( C11H19O2 ) 2, Ti ( Oi-C3H7 ) 4, and H2O (2007) (47)
- Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior (2010) (47)
- Orientation effects in chemical solution derived Pb(Zr0.3, Ti0.7)O3 thin films on ferroelectric properties (2002) (47)
- Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug (2007) (47)
- High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant (2003) (47)
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD) (1996) (46)
- Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering (2003) (46)
- Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD (1993) (46)
- Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories (2012) (46)
- Preparation of high quality RuO2 electrodes for high dielectric thin films by low pressure metal organic chemical vapor deposition (1998) (46)
- Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability (2019) (45)
- A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory (2010) (45)
- Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl‐π‐cyclopentadienyl)Ru for Memory Applications (2000) (45)
- Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory (2012) (45)
- Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories. (2018) (45)
- Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure (2016) (45)
- What Will Come After V‐NAND—Vertical Resistive Switching Memory? (2019) (44)
- Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition (2009) (44)
- Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density (2005) (44)
- ZnO nanoparticle growth on single-walled carbon nanotubes by atomic layer deposition and a consequent lifetime elongation of nanotube field emission (2007) (44)
- Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing (2013) (44)
- Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films (2015) (44)
- Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering (2014) (43)
- Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory (2008) (43)
- Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants (2009) (43)
- Atomic Layer Deposition of Al2O3 Thin Films from a 1-Methoxy-2-methyl-2-propoxide Complex of Aluminum and Water (2005) (43)
- Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor (2009) (43)
- Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials (2013) (43)
- Formation and characterization of hydroxyapatite coating layer on Ti-based metal implant by electron-beam deposition (1999) (43)
- Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability (2012) (42)
- In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications. (2017) (42)
- Textile Resistance Switching Memory for Fabric Electronics (2017) (42)
- Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films. (2018) (42)
- Impact of O3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications (2007) (42)
- Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell (2010) (42)
- SiO2 Incorporation Effects in Ge2Sb2Te5 Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices (2006) (41)
- Structural properties and electronic structure ofHfO2-ZrO2composite films (2010) (41)
- Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors (2016) (41)
- Fluorite-structure antiferroelectrics (2019) (39)
- Passivation of Bottom-Gate IGZO Thin Film Transistors (2009) (39)
- Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices (2020) (39)
- Improvements in Growth Behavior of CVD Ru Films on Film Substrates for Memory Capacitor Integration (2005) (39)
- Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film (2019) (39)
- Improved Electronic Performance of $\hbox{HfO}_{2}/ \hbox{SiO}_{2}$ Stacking Gate Dielectric on 4H SiC (2007) (39)
- Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (2017) (39)
- Resistance switching in epitaxial SrCoOx thin films (2014) (38)
- Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study (2015) (38)
- Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas (2010) (38)
- Spectroscopic investigation of the hole states in Ni-deficient NiO films (2013) (38)
- Dielectric and Electromechanical Properties of Pb(Zr,Ti)O3 Thin Films for Piezo-Microelectromechanical System Devices (2003) (37)
- Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach (2012) (37)
- Chemical Vapor Deposition of HfO2 Thin Films Using a Novel Carbon-Free Precursor: Characterization of the Interface with the Silicon Substrate (2002) (36)
- Threshold resistive and capacitive switching behavior in binary amorphous GeSe (2012) (36)
- Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors. (2014) (36)
- Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability (2008) (35)
- Unusual transport characteristics of nitrogen-doped single-walled carbon nanotubes (2008) (35)
- Effect of oxygen partial pressure on the Fermi level of ZnO1−x films fabricated by pulsed laser deposition (2010) (35)
- Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer. (2015) (35)
- Relaxation oscillator-realized artificial electronic neurons, their responses, and noise. (2016) (35)
- Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O , or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics (2005) (34)
- Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film (2009) (34)
- Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view (2006) (34)
- SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory (2011) (34)
- Structurally and Electrically Uniform Deposition of High-k TiO2 Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition (2005) (34)
- Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application (2012) (33)
- Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films (2018) (33)
- Influences of a Crystalline Seed Layer during Atomic Layer Deposition of SrTiO3 Thin Films Using Ti ( O-iPr ) 2 ( thd ) 2, Sr ( thd ) 2, and H2O (2008) (33)
- Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process (2012) (33)
- Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching. (2014) (33)
- Schottky diode with excellent performance for large integration density of crossbar resistive memory (2012) (32)
- Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films. (2016) (32)
- Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides. (2014) (32)
- A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba0.5,Sr0.5)TiO3/IrO2 thin-film capacitor (1997) (32)
- Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures (2014) (32)
- Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device. (2017) (32)
- Emergence of Negative Capacitance in Multidomain Ferroelectric–Paraelectric Nanocapacitors at Finite Bias (2016) (32)
- Low Variability Resistor–Memristor Circuit Masking the Actual Memristor States (2015) (31)
- Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications (2009) (31)
- Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications (2000) (31)
- Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment (1997) (31)
- Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures (2016) (30)
- Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation (2006) (30)
- High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition. (2019) (30)
- Comprehensive Writing Margin Analysis and its Application to Stacked one Diode‐One Memory Device for High‐Density Crossbar Resistance Switching Random Access Memory (2016) (30)
- X-ray irradiation induced reversible resistance change in Pt/TiO2/Pt cells. (2014) (30)
- Scanning probe based observation of bipolar resistive switching NiO films (2010) (30)
- Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor (2018) (30)
- Cation Composition Control of MOCVD ( Ba , Sr ) TiO3 Thin Films along the Capacitor Hole (2002) (30)
- Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory (2010) (30)
- Resolving the Landauer paradox in ferroelectric switching by high-field charge injection (2009) (30)
- Thermally induced voltage offsets in Pb(Zr,Ti)O3 thin films (2000) (30)
- Metalorganic chemical vapor deposition of very thin Pb(Zr,Ti)O3 thin films at low temperatures for high-density ferroelectric memory applications (2001) (29)
- Properties of Aluminum Nitride Thin Films Deposited by an Alternate Injection of Trimethylaluminum and Ammonia under Ultraviolet Radiation (2006) (29)
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering (1997) (29)
- High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications (2015) (29)
- Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor (2015) (29)
- The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system. (2017) (29)
- Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100 °C) using O3 as an oxygen source (2014) (29)
- Synthesis of Large Area Two-Dimensional MoS2 Films by Sulfurization of Atomic Layer Deposited MoO3 Thin Film for Nanoelectronic Applications (2019) (28)
- Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model (2010) (28)
- Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate (2002) (28)
- The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application (2011) (28)
- Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics (2011) (28)
- Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs (2012) (28)
- La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors (2018) (28)
- Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment (2017) (28)
- Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 Interlayer (2010) (28)
- Direct growth of single-walled carbon nanotubes on conducting ZnO films and its field emission properties (2006) (28)
- Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film. (2014) (27)
- Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory. (2019) (27)
- Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy (2003) (27)
- Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate (2004) (27)
- Characteristics of Amorphous Bi2Ti2O7 Thin Films Grown by Atomic Layer Deposition for Memory Capacitor Applications (2006) (27)
- The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics (2011) (27)
- Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer (2015) (27)
- Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition (2003) (26)
- Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy (2011) (26)
- Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device (2017) (26)
- Electrostatic force microscopy using a quartz tuning fork (2002) (26)
- Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film (2022) (26)
- Variations of the leakage current density and the dielectric constant of Pt/(Ba,Sr)TiO3/Pt capacitors by annealing under a N2 atmosphere (1999) (26)
- Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen (2002) (25)
- Electronic structure of amorphous InGaO3(ZnO)0.5 thin films (2009) (25)
- Thermodynamic stability of various phases of zinc tin oxides from ab initio calculations (2013) (25)
- Film-thickness-dependent Curie-Weiss behavior of (Ba,Sr)TiO3 thin-film capacitors having Pt electrodes (2004) (25)
- Defect engineered electroforming-free analog HfOx memristor and its application to the neural network. (2019) (25)
- Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone (2012) (25)
- Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 Substrates (2011) (25)
- Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area. (2016) (24)
- Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory (2018) (24)
- The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate (2012) (24)
- Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films (2013) (24)
- Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films (2001) (24)
- Two-step reset in the resistance switching of the Al/TiOx/Cu structure. (2013) (23)
- Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch (2011) (23)
- Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor (2011) (23)
- The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films (2009) (23)
- Deposition Characteristics of (Ba, Sr)TiO3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures (1997) (23)
- Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films (2009) (23)
- Growth and characterization of barium titanate thin films prepared by metalorganic chemical vapor deposition (1994) (23)
- Improving the Morphological and Optical Properties of Sputtered Indium Tin Oxide Thin Films by Adopting Ultralow-Pressure Sputtering (2009) (23)
- Electrical properties of TiO 2 -based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes (2011) (23)
- Liquid Injection ALD of Pb(Zr,Ti)Ox Thin Films by a Combination of Self-Regulating Component Oxide Processes (2007) (23)
- Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition (1998) (23)
- Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions (2007) (23)
- Electrical conduction properties of sputter-grown (Ba, Sr)TiO3 thin films having IrO2 electrodes (2000) (23)
- Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol (2016) (23)
- A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors (2020) (23)
- Deposition Characteristics and Annealing Effect of La2O3 Films Prepared Using La ( iPrCp ) 3 Precursor (2007) (22)
- Highly sensitive flexible NO2 sensor composed of vertically aligned 2D SnS2 operating at room temperature (2020) (22)
- Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors (2006) (22)
- Atomic Layer Deposition and Electrical Properties of PbTiO3 Thin Films Using Metallorganic Precursors and H2O (2007) (22)
- Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time (2012) (22)
- Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas (2010) (22)
- The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD (2008) (22)
- Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt (2013) (22)
- Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures (2002) (22)
- Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment (2007) (22)
- Botryoidal growth of crystalline ZnO nanoparticles on a forest of single-walled carbon nanotubes by atomic layer deposition (2011) (21)
- Influence of exchange-correlation functionals on dielectric properties of rutile TiO2 (2011) (21)
- Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors (2014) (21)
- Single‐Cell Stateful Logic Using a Dual‐Bit Memristor (2018) (21)
- Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device (2018) (21)
- A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors (2019) (21)
- Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors (2014) (21)
- Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films. (2014) (21)
- Growth Behavior of Atomic-Layer-Deposited Pb ( Zr , Ti ) O x Thin Films on Planar Substrate and Three-Dimensional Hole Structures (2008) (21)
- Pairing of cation vacancies and gap-state creation in TiO2 and HfO2 (2007) (21)
- Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers (2012) (21)
- The impact of orbital hybridization on the electronic structure of crystalline InGaZnO: a new perspective on the compositional dependence (2014) (20)
- Effect of NiO Growth Conditions on the Bipolar Resistance Memory Switching of Pt/NiO/SRO Structure (2010) (20)
- Complementary resistive switching and synaptic-like memory behavior in an epitaxial SrFeO2.5 thin film through oriented oxygen vacancy channels. (2020) (20)
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing. (1999) (20)
- Monocliniclike local atomic structure in amorphous ZrO2 thin film (2010) (20)
- Variation of Electrical Conduction Phenomena of Pt/ (Ba, Sr)TiO3/Pt Capacitors by Different Top Electrode Formation Processes (1997) (20)
- Controlling work function and damaging effects of sputtered RuO₂ gate electrodes by changing oxygen gas ratio during sputtering. (2013) (20)
- Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes. (2014) (20)
- Controlling the initial growth behavior of SrTiO3 films by interposing Al2O3 layers between the film and the Ru substrate (2012) (20)
- Enhanced Nucleation Behavior of Atomic-Layer-Deposited Ru Film on Low-k Dielectrics Afforded by UV-O3 Treatment (2008) (20)
- Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma (2007) (20)
- Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping (2009) (20)
- Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory. (2017) (20)
- Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process (1996) (20)
- Thermal Annealing Effects on the Atomic Layer Deposited LaAlO3 Thin Films on Si Substrate (2008) (20)
- Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy (2011) (20)
- A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing (2016) (20)
- Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory. (2017) (19)
- In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory (2018) (19)
- A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory. (2016) (19)
- Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior (2018) (19)
- Effect of O 2 Addition on the Deposition of Pt Thin Films by Metallorganic Chemical Vapor Deposition (1998) (19)
- Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands (2004) (19)
- Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application (2015) (19)
- Influence of High Temperature Postdeposition Annealing on the Atomic Configuration in Amorphous In–Ga–Zn–O Films (2009) (18)
- Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure (2015) (18)
- Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on Ultra-Thin TaOx Film. (2020) (18)
- Advanced memory—Materials for a new era of information technology (2018) (18)
- Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases (2016) (18)
- The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory (2009) (18)
- Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory. (2018) (18)
- Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis (2013) (18)
- Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate (2004) (18)
- Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5 resistance switching layer (2015) (18)
- Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films. (2012) (18)
- Review of Semiconductor Flash Memory Devices for Material and Process Issues. (2022) (18)
- Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation (2010) (18)
- The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application (2012) (18)
- A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design (2018) (17)
- Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics (2019) (17)
- Improvements in electrical properties of (Ba,Sr)TiO3 capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate (1999) (17)
- Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films. (2018) (17)
- Effect of catalyst layer density and growth temperature in rapid atomic layer deposition of silica using tris(tert-pentoxy)silanol. (2011) (17)
- Cation-Regulated Transformation for Continuous Two-Dimensional Tin Monosulfide (2020) (17)
- Structural and Electrical Properties of Ba0.5Sr0.5TiO3 Films on Ir and IrO2 Electrodes (1997) (17)
- Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films (2008) (17)
- Review of ferroelectric field‐effect transistors for three‐dimensional storage applications (2021) (17)
- Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition (2018) (17)
- Liquid-Injection Atomic Layer Deposition of TiO x and Pb–Ti–O Films (2006) (17)
- Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ Layers (2007) (17)
- 2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate (2018) (17)
- Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics (2003) (17)
- Time-varying data processing with nonvolatile memristor-based temporal kernel (2021) (17)
- Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing (2000) (16)
- Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures (2012) (16)
- First-principles calculation of capacitance including interfacial effects (2008) (16)
- Improvement in the negative bias illumination temperature stress instability of In–Ga–Zn–O thin film transistors using an Al2O3 buffer layer (2011) (16)
- Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition (2005) (16)
- Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO x N y Gate Dielectrics (2010) (16)
- Memristor crossbar array for binarized neural networks (2019) (16)
- Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature (2011) (16)
- Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations (2008) (16)
- Electronic Conduction Mechanism of SrTiO3 Thin Film Grown on Ru Electrode by Atomic Layer Deposition (2009) (16)
- Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor. (2018) (16)
- Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination (2011) (16)
- Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4∕SiO2∕Si3N4 multilayer for flash memory application (2005) (16)
- Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect (2012) (16)
- Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability. (2017) (16)
- Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage (2011) (16)
- Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O3 thin films on bottom-Pt-electrode thickness (2002) (16)
- Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior (2014) (16)
- Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor (2016) (15)
- Interface Engineering for Extremely Large Grains in Explosively Crystallized TiO2 Films Grown by Low-Temperature Atomic Layer Deposition (2017) (15)
- Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films (2010) (15)
- Spectroscopic Investigation on the Origin of Photoinduced Carrier Generation in Semiconducting InGaO and InGaZnO Films (2010) (15)
- Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms (2017) (15)
- Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors. (2013) (15)
- Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$ (2012) (15)
- Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O. (2017) (15)
- Polarization reversal behavior in the Pt/Pb"Zr,Ti…O3/Pt and Pt/Al 2 O 3 /Pb"Zr,Ti…O 3 /Pt capacitors for different reversal directions (2010) (15)
- Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films (2014) (15)
- Structural disorders in an amorphous HfO 2 film probed by x-ray absorption fine structure analysis (2008) (15)
- Tunneling current from a metal electrode to many traps in an insulator (2005) (15)
- Phase control of HfO2-based dielectric films for higher-k materials (2014) (15)
- Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage. (2020) (14)
- Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch (2018) (14)
- Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor (2013) (14)
- Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O3 Films for Micro-Sensors and Actuators (2003) (14)
- Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films (2004) (14)
- Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics (2010) (14)
- A comparative study on the electrical conduction mechanisms of (Ba[sub 0.5]Sr[sub 0.5])TiO[sub 3] thin films on Pt and IrO[sub 2] electrodes (1998) (14)
- Study on the Existence of Abnormal Hysteresis in Hf-In-Zn-O Thin Film Transistors under Illumination (2011) (14)
- Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications (2011) (14)
- Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection (2009) (14)
- High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate (2016) (14)
- Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory (2008) (14)
- Improved Nucleation Behavior of Ru Thin Films Prepared by MOCVD on TiCl4 Pretreated Substrates (2007) (13)
- Growth and Phase Separation Behavior in Ge-Doped Sb−Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions (2010) (13)
- In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application (2021) (13)
- Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2. (2019) (13)
- Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4 (2014) (13)
- MOCVD of PZT Thin Films with Different Precursor Solutions for Testing Mass-Production Compatibility (2003) (13)
- Highly improved response and recovery characteristics of Si FET-type gas sensor using pre-bias (2016) (13)
- Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors (2017) (13)
- The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination (2011) (13)
- Preparation and Characterization of Pb(Zr, Ti)O3 Thin Films by Metalorganic Chemical vapor Deposition Using a Solid Delivery System (2000) (13)
- Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer (2019) (13)
- Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics (2017) (13)
- Controlling the Composition of Doped Materials by ALD: A Case Study for Al-Doped TiO2 Films (2008) (13)
- A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (2020) (13)
- Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM (2007) (13)
- Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration (2020) (13)
- Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory (2020) (12)
- Time‐Efficient Stateful Dual‐Bit‐Memristor Logic (2019) (12)
- Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films (2011) (12)
- Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer (2021) (12)
- Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate (2003) (12)
- Electrical properties of high-k HfO2 films on Si1-xGex substrates (2005) (12)
- Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials (2018) (12)
- Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing (2015) (12)
- Fabrication of ultrathin IrO2 top electrode for improving thermal stability of metal–insulator–metal field emission cathodes (2005) (12)
- Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator (2014) (12)
- A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor (2021) (11)
- Electrically-generated memristor based on inkjet printed silver nanoparticles (2019) (11)
- Homoepitaxial growth of 6H–SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor (2000) (11)
- A Si FET-type Gas Sensor with Pulse-driven Localized Micro-heater for Low Power Consumption (2018) (11)
- Low temperature 4H-SiC epitaxial growth on 4H-SiC (112̄0) and (11̄00) faces by organometallic chemical vapor deposition (2002) (11)
- Deposition of Pb(Zr,Ti)O3 thin films by metal-organic chemical vapor deposition using β-diketonate precursors at low temperatures (1995) (11)
- Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications. (2018) (11)
- Optimized Nitridation of Al2 O 3 Interlayers for Atomic-Layer-Deposited HfO2 Gate Dielectric Films (2004) (11)
- Mass-Production Memories (DRAM and Flash) (2014) (11)
- Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors (2001) (11)
- Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si (2009) (11)
- Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O3 as Oxygen Sources (2017) (11)
- Study on the Step Coverage of Metallorganic Chemical Vapor Deposited TiO2 and SrTiO3 Thin Films (2005) (11)
- Deposition and characterization of Pb TiO3 thin films on silicon wafers using metalorganic sources (1993) (11)
- Effect of annealing on electrical properties of Pt/β-SiC contact (2001) (11)
- Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers (2012) (11)
- Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage (2015) (11)
- Diffusion induced recrystallization of TiC (1996) (11)
- Atomic Layer Deposited Oxygen‐Deficient TaOx Layers for Electroforming‐Free and Reliable Resistance Switching Memory (2018) (11)
- Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure (2009) (10)
- Atomic layer deposition of TiO2 and Al‐doped TiO2 films on Ir substrates for ultralow leakage currents (2011) (10)
- Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics (2019) (10)
- Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes (2020) (10)
- Compositional variation of metallorganic chemically vapor deposited SrTiO3 thin films along the capacitor hole having a diameter of 0.15 μm (2001) (10)
- Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors (2014) (10)
- Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite (2020) (10)
- Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination (2010) (10)
- Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics (2004) (10)
- Improved electrical properties of tin-oxide films by using ultralow-pressure sputtering process (2009) (10)
- Phase transition characteristics of nitrogen-doped antimony-telluride (N-Sb2Te3) thin films for a phase change random access memory (2006) (10)
- Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals (2019) (10)
- Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films (2015) (10)
- Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice (2021) (10)
- Electron hopping interactions in amorphous ZnO films probed by x-ray absorption near edge structure analysis (2011) (9)
- Dielectric constant dispersion of yttrium-doped (Ba,Sr)TiO3 films in the high-frequency (10kHz–67GHz) domain (2005) (9)
- MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors (2018) (9)
- Electrical properties of (Pb,La)TiO3 thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system (1998) (9)
- Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer (2015) (9)
- Fabrication of Gd2O3-Doped CeO2 Thin Films for Single-Chamber-Type Solid Oxide Fuel Cells and Their Characterization (2009) (9)
- Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory. (2012) (9)
- Chemically conformal deposition of SrTiO 3 thin films by atomic layer deposition using conventional metal organic precursors and remote-plasma activated H 2 O (2005) (9)
- Microstructural characterization of sputter-deposited Pt thin film electrode (2004) (9)
- Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5 (2012) (9)
- Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films (2012) (9)
- Improving the Performance of Tin Oxide Thin-Film Transistors by Using Ultralow Pressure Sputtering (2010) (9)
- Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory (2019) (8)
- Effects of Oxygen Addition on the Local Structures of Cosputtered Transparent Conducting Oxide Films (2009) (8)
- Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film (2010) (8)
- A new sensing mechanism of Si FET-based gas sensor using pre-bias (2020) (8)
- Improvement in Thermal Stability of Stacked Structures of Aluminum Nitride and Lanthanum Oxide Thin Films on Si Substrate (2007) (8)
- Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution (2017) (8)
- Ferroelectric and reliability properties of metal-organic chemical vapor deposited Pb(Zr0.15Ti0.85)O3 thin films grown in the self-regulation process window (2006) (8)
- Optimization of the annealing process for the (Ba,Sr)TiO 3 thin films grown by low-temperature (420 °C) metalorganic chemical vapor deposition (2001) (8)
- Fabrication of suspended single-walled carbon nanotubes via a direct lithographic route (2006) (8)
- Ab initio study on the structural characteristics of amorphous Zn2SnO4 (2013) (8)
- Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD) (1996) (8)
- Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures. (2020) (8)
- Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering (2012) (8)
- Resistive Switching in $\hbox{TiO}_{2}$ Thin Films Using the Semiconducting In-Ga-Zn-O Electrode (2012) (8)
- Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition. (2017) (8)
- Performance Enhancement of Freestanding Micro-SOFCs with Ceramic Electrodes by the Insertion of a YSZ-Ag Interlayer (2014) (8)
- Investigation of the deposition behavior of a lead oxide thin film on ir substrates by liquid delivery metallorganic chemical vapor deposition (2006) (8)
- A Study of Liquid Delivery MOCVD of Lead Oxide Thin Films on Pt and Ir Substrates (2005) (8)
- Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO2 Gate Dielectrics and Metal Gate (2010) (8)
- An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O3 thin film capacitor using the switching transient current measurements (2009) (8)
- Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness (2012) (8)
- Symmetry-dependent interfacial reconstruction to compensate polar discontinuity at perovskite oxide interfaces (LaAlO3/SrTiO3 and LaAlO3/CaTiO3) (2015) (8)
- Extension of Two-Port Sneak Current Cancellation Scheme to 3-D Vertical RRAM Crossbar Array (2017) (8)
- Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode. (2019) (8)
- High rate dry etching of InGaZnO by BCl3/O2 plasma (2011) (8)
- Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (2020) (8)
- Demonstrating the Ultrathin Metal–Insulator– Metal Diode Using TiN/ZrO2–Al2O3–ZrO2 Stack by Employing RuO2 Top Electrode (2018) (8)
- Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor (1996) (8)
- Unusual thickness dependence of permittivity and elastic strain in Sc modified epitaxial (Ba,Sr)TiO3 thin films (2008) (8)
- Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode (2013) (8)
- Direct Observation of Conducting Paths in TiO2 Thin Film by Transmission Electron Microscopy (2009) (8)
- Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays (2019) (8)
- Structural properties and electronic structure of HfO2-ZrO2 composite films (2010) (7)
- Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas (2019) (7)
- Interfacial chemical bonding-mediated ionic resistive switching (2017) (7)
- Improvements in Reliability and Leakage Current Properties of HfO2 Gate Dielectric Films by In Situ O 3 Oxidation of Si Substrate (2004) (7)
- Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film (2011) (7)
- Properties of MIS Capacitors Using the Atomic-Layer-Deposited ZnO Semiconductor and Al2O3 Insulator (2008) (7)
- Liquid Injection Atomic Layer Deposition of TiO x Films Using Ti [ OCH ( CH3 ) 2 ] 4 (2007) (7)
- Amorphous High k Dielectric Bi1 − x − y Ti x Si y O z Thin Films by ALD (2004) (7)
- Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics. (2021) (7)
- Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices (2016) (7)
- Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3‐Based Dielectric for Further Scaling of Dynamic Random Access Memory (2019) (7)
- Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory (2019) (7)
- Atomic layer deposition of Ru thin films using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the effect of ammonia treatment during the deposition (2020) (7)
- Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer. (2021) (7)
- Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer (2013) (7)
- Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition (1997) (7)
- Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers. (2014) (7)
- Al-Doped TiO 2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors * * N (2008) (7)
- Changes in structures and electrical conduction mechanisms of chemical vapor deposited Ta2O5 thin films by annealing under O3 atmosphere with ultraviolet light radiation (2004) (7)
- Atomic Layer Deposition for Microelectronic Applications (2012) (7)
- Dc current transport behavior in amorphous GeSe films (2011) (7)
- Bulk- or interface-limited electrical conductions in IrO 2 /(Ba,Sr)TiO 3 /IrO 2 thin film capacitors (2001) (7)
- Atomic layer deposition of chalcogenides for next-generation phase change memory (2021) (7)
- Bi1-x-yTixSiyOz (BTSO) thin films for dynamic random access memory capacitor applications (2005) (7)
- Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (2022) (7)
- Polarization switching and discharging behaviors in serially connected ferroelectric Pt/Pb(Zr,Ti)O3/Pt and paraelectric capacitors (2011) (6)
- Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2 (2009) (6)
- Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors (2022) (6)
- Neuromorphic Computing: Memristors for Energy‐Efficient New Computing Paradigms (Adv. Electron. Mater. 9/2016) (2016) (6)
- Atomic Layer Deposition of Bi1 − x − y Ti x Si y O z Thin Films from Alkoxide Precursors and Water (2005) (6)
- Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1−xGex∕Si substrates (2008) (6)
- Electroforming Processes in Metal Oxide Resistive‐Switching Cells (2016) (6)
- Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe∕Si substrates (2008) (6)
- VCAM: Variation Compensation through Activation Matching for Analog Binarized Neural Networks (2019) (6)
- Property improvement of aluminum-oxide thin films deposited under photon radiation by using atomic layer deposition (2006) (6)
- Impact of Zr Content in Atomic Layer Deposited Hf1−Zr O2 Thin Films (2019) (6)
- Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications (2020) (6)
- Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (2007) (6)
- X-ray spectroscopy study on the electronic structure of Sn-added p-type SnO films (2019) (6)
- Atomic layer deposition of Ta-doped SnO2 films with enhanced dopant distribution for thermally stable capacitor electrode applications (2019) (6)
- Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation (2012) (6)
- Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics (2010) (6)
- Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate (2004) (6)
- The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics (2010) (6)
- Characterization of Pb x Pt y Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb ( Zr , Ti ) O3 Thin Films (2006) (6)
- Influence of Phase Separation on Electrical Properties of ALD Hf-Silicate Films with Various Si Concentrations (2008) (6)
- Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory (2019) (6)
- Characteristics of Polycrystalline SrRuO3 Thin-Film Bottom Electrodes for Metallorganic Chemical-Vapor-Deposited Pb ( Zr0.2Ti0.8 ) O3 Thin Films (2006) (6)
- Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer (2021) (6)
- Low Temperature Measurement of the Electrical Conductivity in Amorphous InGaZnO Thin Films (2014) (6)
- Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gates. (2013) (6)
- Analysis of stresses in Ru thin films prepared by chemical vapor deposition (2003) (6)
- Thermal stability and deposition behaviors of Ru thin films prepared by using metalorganic chemical vapor deposition (2004) (6)
- Pb‐Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition (1995) (6)
- Chemical Vapor Deposition of HfO2 Thin Films Using a Novel Carbon-Free Precursor. Characterization of the Interface with the Silicon Substrate. (2002) (5)
- Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers (2021) (5)
- Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks (2019) (5)
- Pt-doped Ru films prepared by CVD as electrodes for DRAM capacitors (2005) (5)
- Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 (2018) (5)
- Atomic engineering of metastable BeO6 octahedra in a rocksalt framework (2020) (5)
- Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory (2009) (5)
- Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures (2009) (5)
- Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor (2020) (5)
- Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems (2020) (5)
- Heat-treatment-induced ferroelectric fatigue of Pt/Sr1−xBi2+yTa2O9/Pt thin-film capacitors (2002) (5)
- Growth of Epitaxial BaTiO 3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition (1994) (5)
- Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La(N(SiMe3)2)3 (2012) (5)
- The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$ (2013) (5)
- Publisher's Note: “Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy” [Appl. Phys. Lett. 96, 152909 (2010)] (2010) (5)
- Theoretical understanding of the catalyst-free growth mechanism of GaAs <111>B nanowires (2019) (5)
- Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor. (2009) (5)
- Broad Phase Transition of Fluorite‐Structured Ferroelectrics for Large Electrocaloric Effect (2019) (5)
- Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (2021) (5)
- Atomic rearrangements in HfO2∕Si1−xGex interfaces (2006) (5)
- Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View (2020) (5)
- Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure (2022) (5)
- Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS2 (2019) (5)
- The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low power and high reliability (2005) (5)
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition (2004) (5)
- Scaling issues of Pb(Zr, Ti)O3 capacitor stack for high density FeRAM devices (2003) (5)
- Atomic Layer Deposition of Ru Thin Films Using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru by a Liquid Injection System (2007) (5)
- Control of the Microstructure of (Pb,La)TiO3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory (1998) (5)
- Erratum to: Atomic Layer Deposition for Semiconductors (2014) (5)
- Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm (2022) (5)
- A stack capacitor technology with (Ba,Sr)TiO/sub 3/ dielectrics and Pt electrodes for 1 Giga-Bit density DRAM (1996) (5)
- X-ray absorption spectroscopy study on oxygen-deficient hafnium oxide film (2008) (5)
- Improvements in the electrical properties of high-k HfO2 dielectric films on Si1- xGex substrates by postdeposition annealing (2007) (4)
- Effect of Alumina Addition on Bi-Ti-Al-O Dielectric Thin Films (2006) (4)
- Low temperature metal-organic chemical vapor deposition of (Ba, Sr)TiO3 thin films for capacitor applications (2000) (4)
- Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics (2020) (4)
- The VFB Modulation Effect of ALD Grown Al2O3, SrO, La2O3 Capping Layers with HfO2 Gate Dielectrics (2010) (4)
- Oxidation Behavior of TiAlN Barrier Layers with and without Thin Metal Overlayers for Memory Capacitor Applications (2002) (4)
- Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films (2012) (4)
- Negative Capacitance in HfO2- and ZrO2-Based Ferroelectrics (2019) (4)
- SPSNN: nth Order Sequence-Predicting Spiking Neural Network (2020) (4)
- Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties (2019) (4)
- Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films (2021) (4)
- Substrate Surface Modification for Enlarging Two-Dimensional SnS Grains at Low Temperatures (2020) (4)
- Electrically Benign Dry-Etching Method for Rutile TiO2 Thin-Film Capacitors with Ru Electrodes (2010) (4)
- Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control (2018) (4)
- Electrically Benign Ru Wet Etching Method for Fabricating Ru ∕ TiO2 ∕ Ru Capacitor (2011) (4)
- Improvement of leakage current characteristics of Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films by N[sub 2]O plasma surface treatment (1997) (4)
- The Effect of Nitrogen in HfOxNy and ZrOxNy on Dielectric Properties and BTI Characteristics (2010) (4)
- Initial growth behavior of a lead oxide thin film on ir substrates by atomic layer deposition (2007) (4)
- ErratumErratum to ‘Effects of additives on properties on MgO thin films by electrostatic spray deposition’: [Thin Solid Films 377–378 (2000) 694] (2001) (4)
- Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications (2005) (4)
- Role of the Short‐Range Order in Amorphous Oxide on MoS2/a‐SiO2 and MoS2/a‐HfO2 Interfaces (2019) (4)
- Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours. (2016) (3)
- Role of Carbon on Resistivity and Structure of HfC x N y Films Grown by Low Temperature MOCVD (2009) (3)
- Integration Technology and Cell Design (2016) (3)
- Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO2 Films Using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) Precursor and O3 Oxidant (2006) (3)
- Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films (2004) (3)
- Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020) (2020) (3)
- Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- $\hbox{TiO}_{x}$-Based Resistive-Switching Memory Devices (2012) (3)
- (In,Sn)[sub 2]O[sub 3]∕TiO[sub 2]∕Pt Schottky-type diode switch for the TiO[sub 2] resistive switching memory array (2008) (3)
- Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer (2007) (3)
- Markov Chain Hebbian Learning Algorithm With Ternary Synaptic Units (2017) (3)
- An ab initio approach on the asymmetric stacking of GaAs 111 nanowires grown by a vapor-solid method. (2020) (3)
- Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors (2000) (3)
- Nondestructive investigation of interface states in high‐k oxide films on Ge substrate using X‐ray absorption spectroscopy (2012) (3)
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films (2015) (3)
- Effi cient CH 3 NH 3 PbI 3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition (2015) (3)
- Cross-linking Structure of Self-aligned P-Type SnS Nanoplates for Highly Sensitive NO2 Detection at Room Temperature (2022) (3)
- Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method. (2021) (3)
- (Invited) ALD and Pulsed-CVD of Ru, RuO2, and SrRuO3 (2013) (3)
- Atomic Layer Deposition of Bi1 − x − y Ti x Si y O z Thin Films Using H2O Oxidant and Their Characteristics Depending on Si Content (2007) (3)
- First-principles study on the formation of a vacancy in Ge under biaxial compressive strain (2010) (3)
- Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer (2010) (3)
- Liquid Injection Atomic Layer Deposition of Pb(Zr,Ti)O3 Thin Films on Three Dimensional Structures (2007) (3)
- In‐Depth Analysis of One Selector–One Resistor Crossbar Array for Its Writing and Reading Operations for Hardware Neural Network with Finite Wire Resistance (2021) (3)
- Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates (2021) (3)
- Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode (2009) (3)
- Characterization of MOCVD Pt electrode for ferroelectric thin films (1996) (3)
- Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013) (2013) (3)
- Higher-k dielectrics and conductive oxide electrodes for next generation DRAMs with a design rule of <20 nm# (2011) (3)
- Atomistic prediction on the composition- and configuration-dependent bandgap of Ga(As,Sb) using cluster expansion and ab initio thermodynamics (2022) (2)
- Modified Dynamic Physical Model of Valence Change Mechanism Memristors. (2022) (2)
- Thermal Stability of Stack Structures of Aluminum Nitride and Lanthanum Oxide Thin Films (2006) (2)
- Next‐Generation Memory: Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017) (2017) (2)
- Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As (2020) (2)
- Regulation of transport properties by polytypism: a computational study on bilayer MoS2. (2017) (2)
- Demonstration of Neuromodulation‐inspired Stashing System for Energy‐efficient Learning of Spiking Neural Network using a Self‐Rectifying Memristor Array (2022) (2)
- Bipolar resistive switching property of Si3N4−xthin films depending on N deficiency (2020) (2)
- (Invited) Structural and Electrical Characterization of TiO2 and Al-Doped TiO2 Films on Ir Electrode for Next Generation DRAM Capacitor (2010) (2)
- Epitaxial growth of BaTiO₃ thin films at 600 °C by metalorganic chemical vapor deposition (1995) (2)
- The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition (2009) (2)
- Atomic and electronic structures of a‐ZnSnO3/a‐SiO2 interface by ab initio molecular dynamics simulations (2016) (2)
- Atomic Layer Deposition of Pb(Zr,Ti)O x , Thin Films by a Combination of Binary Atomic Layer Deposition Processes (2006) (2)
- Optimized Electrical Properties and Chemical Structures of SrTiO3 Thin Films on Si Using Various Interfacial Barrier Layers (2010) (2)
- Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study (2019) (2)
- The effects of capping barrier layers on the compositional and structural variations of integrated Pb(Zr, Ti)O 3 ferroelectric capacitor having the dimension 3 × 3 μm 2 (1999) (2)
- The Effect of Periodic Relaxation on the Growth Behavior and Electrical Properties of Atomic Layer Deposited PbTiO3 Thin Film (2009) (2)
- Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators (2004) (2)
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer (2003) (2)
- Comparison of Electrical Properties Between HfO2 Films on Strained and Relaxed Si1 − x Ge x Substrates (2007) (2)
- Atomic-Layer-Deposited Dielectric Thin Films on a Cu Clad Laminate Substrate for Embedded Metal–Insulator–Metal Capacitor Applications in Printed Circuit Boards (2011) (2)
- Influence of the Pt Top Electrode Annealing Procedure on the Ferroelectric Property of MOCVD Pb ( Zr0.2Ti0.8 ) O3 Thin Films (2006) (2)
- Pyroelectric and Electrocaloric Effects and Their Applications (2019) (2)
- Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics (2020) (2)
- Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch Array (2019) (2)
- Migration of nitrogen in hexagonal Ge2Sb2Te5: An ab‐initio study (2012) (2)
- Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer (2021) (2)
- Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory (2022) (2)
- Fabrication of HfO2 Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density (2005) (2)
- Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance (2022) (2)
- Publisher's Note: Electrically Benign Dry-Etching Method for Rutile TiO2 Thin-Film Capacitors with Ru Electrodes [ Electrochem. Solid-State Lett. , 13 , G1 (2010) ] (2010) (2)
- Integration of (Ba,Sr)TiO/sub 3/ capacitor with platinum electrodes having SiO/sub 2/ spacer (1997) (2)
- Deposition and Characterization of High Dielectric Thin Films for Memory Device Application (2003) (2)
- A Mass-Production Compatible Capacitor Technology for DRAMs with Design Rule Down To 20 nm (2009) (2)
- Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory (2011) (2)
- Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering (2009) (1)
- In fl uence of exchange-correlation functionals on dielectric properties of rutile TiO 2 (1)
- Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection (2020) (1)
- Comparison of the Electrical Properties of High-k Gate Dielectric (HfO2 and Al2O3) Films with Pt or n+-Polycrystalline-Silicon Gate (2004) (1)
- Amorphous high k dielectric Bi1-x-yTixSiyOz thin films by ALD (2004) (1)
- Stochastic Learning with Back Propagation (2019) (1)
- Dielectric and Electrode Thin Films for Stack-Cell Structured DRAM Capacitors with sub 50-nm Design Rules (2007) (1)
- A first-principles study of the structural and electronic properties of the epitaxial Ge(1 1 1)/La2O3(0 0 1) heterostructure (2019) (1)
- Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition (2019) (1)
- Relation between electrical properties and surface morphology of indium tin oxide thin films deposited by RF magnetron sputtering (2007) (1)
- Impact of Electrodes on the Ferroelectric Properties (2019) (1)
- Ab initio Calculations on the Atomic and Electronic Structures of Oxygen-Doped Hexagonal Ge2Sb2Te5 (2012) (1)
- Effect of light illumination on the low-frequency noises in amorphous-IGZO TFTs (2011) (1)
- Atomic Layer Deposition of Pb(Zr,Ti)Ox, Thin Films by a Combination of Binary Atomic Layer Deposition Processes (2006) (1)
- SrTiO3 Thin Film Growth by Atomic Layer Deposition Using Ti(O-iPr)2(thd)2, Sr(thd)2, and H2O (2007) (1)
- TRANSMISSION ELECTRON MICROSCOPY OBSERVATION OF THE INTERFACIAL REACTION BETWEEN A METAL-ORGANIC CHEMICAL VAPOR DEPOSITION BATIO3 THIN FILM AND A (100 ) MGO SUBSTRATE (1995) (1)
- Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer (2006) (1)
- CMOS sensor array for bi-directional communication with electrically active cells (2009) (1)
- Dopant Penetration Behavior of B-Doped P + Polycrystalline- Si0.73Ge0.27 ∕ Al2O3 or AlN – Al2O3 ∕ n-Si Metal Insulator Semiconductor Capacitors (2006) (1)
- Improved Growth Behaviors and Electrical Properties of SrTiO3 Thin Films Using the Optimized Seed Layer Deposited by Atomic Layer Deposition (2009) (1)
- On the early history of atomic layer deposition: most significant works and applications (2016) (1)
- Electrical and Structural Properties of ZrO 2 /Y 2 O 3 /ZrO 2 Dielectric Film for DRAM Capacitor (2018) (1)
- Atomic layer deposition of Sn1-xSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection (2021) (1)
- Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate (2021) (1)
- Initial oxidation and surface stability diagram of Ge(100) as a function of the temperature and oxygen partial pressure through ab initio thermodynamics (2019) (1)
- Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors (2000) (1)
- Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films (2019) (1)
- Investigation of the electronic structure of amorphous SnO film using x-ray absorption spectroscopy (2020) (1)
- Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a - GeO2/Ge Structures Using the First-Principles Scattering-State Method (2019) (1)
- Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes (2017) (1)
- Influence of an In-Situ Formed Interfacial SiNx Layer on the Electrical Performance and Thermal Stability of High-k HfO2 Films (2006) (1)
- Liquid injection atomic layer deposition of perovskite-type multi-component oxide thin films for ferroelectric and higher-k three dimensional capacitor structures (2008) (1)
- Effect of solution concentration on droplet size in ultrasonic aerosol generator (1997) (1)
- Ab initio study on the structural characteristics of amorphous Zn 2 SnO 4 (2013) (1)
- Ferroelectric memories (2019) (1)
- Reliable Domain‐Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors (2022) (1)
- The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (2022) (1)
- Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications (2022) (1)
- Reliable Domain-Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors (2022) (1)
- Publisher Correction: The fundamentals and applications of ferroelectric HfO2 (2022) (1)
- Comparison on Physical and Electrical Properties of Sputtered Ru and RuO2 Gate Electrodes Grown on HfO2/Si for p-MOSFET (2012) (0)
- Cyclic Plasma-Enhanced Chemical Vapor Deposition of Ge2Sb2Te5 Films using Metal-Organic Sources for Phase Change RAM (2006) (0)
- Stateful logic circuit and material using memristors (2017) (0)
- Enhanced Pseudo-Atomic Layer Deposition of Antimony Telluride Thin Films by Co-injecting NH3 Gas with Both Precursors (2023) (0)
- Characteristics of a capacitive probe array for direct surface charge detection (2007) (0)
- (Invited) Atomistic Understanding on the Surface of GaAs By Ab Initio Thermodynamics; From Equilibrium Shape to Growth Shape (2020) (0)
- Investigation of RU thin films prepared by chemical vapor deposition as bottom electrodes for memory applications (2003) (0)
- Inhomogeneity-Induced Carrier Transport of Chemical Vapor Deposited Graphene on HfO2 at Low Temperatures (2013) (0)
- Study on the Chemical Interaction Between an Atomic-Layer-Deposited HfO2 Film and Si Substrate Depending on the Interfacial SiN Layer Formation (2006) (0)
- (Invited) Ferroelectric (Hf,Zr)O 2 Films (2016) (0)
- Optimal Distribution of Spiking Neurons Over Multicore Neuromorphic Processors (2020) (0)
- Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate (2021) (0)
- EMI Mesh Development for the PDP using Electroforming (2011) (0)
- Preparation and Characterization of Iridium Oxide Thin Films by DC Reactive Sputtering (1996) (0)
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films (1999) (0)
- Unusual ALD Behaviors in Functional Oxide Films for Semiconductor Memories (2013) (0)
- Double Layers-Stacked 3D 1D1R Crossbar Rram Integrating a Diode Selector with Rectification Ratio of ~109 (2016) (0)
- Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing (2011) (0)
- [Young Scientist Presentation Award Speech] First-principles simulation of nanocapacitors--dead layer effect and negative capacitance (2016) (0)
- (Invited) Phase Transition and Related Energy Applications of (Hf,Zr)O2 Films (2017) (0)
- A Process Integration of (Ba, Sr) TiO3 Capacitor into 256M DRAM (1997) (0)
- Interface Analysis of Transparent Analog Capacitor Using ITO Electrodes and ALD High-k Dielectrics (2009) (0)
- Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy (2009) (0)
- ferroelectric Hf 0 . 5 Zr 0 . 5 O 2 films by RF sputtering method (2008) (0)
- A First-Principles Study on the Oxygen Adsorption and Interface Characteristics with a-GeO2 of Ge[001] Nanowire (2019) (0)
- Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film (Adv. Electron. Mater. 11/2022) (2022) (0)
- Electrical properties of amorphous Zn-Sn-O thin films depending on composition and post-deposition annealing temperature near crystallization temperature† (2023) (0)
- Poster: Memristive Systems (2013) (0)
- Nanosession: Atomic Layer Deposition (2013) (0)
- Publisher's Note: Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas [ Electrochem. Solid-State Lett. , 13 , G13 (2010) ] (2010) (0)
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition (1999) (0)
- Invited) Oxide Semiconductor Based Charge Trap Device for NAND Flash Memory (2017) (0)
- ELECTRICAL CHARACTERIZATION OF Pt / ( Ba , Sr ) TiO3 / Pt CAPACITORS FOR ULSI DRAM APPLICATIONS (1995) (0)
- Nonvolatile Memristor-Based Reservoir Computing System with Reservoir Controllability (2021) (0)
- First-principles simulation of negative capacitance in a polydomain ferroelectric-paraelectric bilayer capacitor under bias (2016) (0)
- Improving the water-resistance of MgO-based metal-insulator-metal capacitors by inserting BeO thin film grown via atomic layer deposition (2022) (0)
- The Effect of Hf/(Hf+Si) Ratios in Hf1-xSixOy Dielectric Film on Physical and Electrical Stabilities (2010) (0)
- Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen (2007) (0)
- (Invited) Identity of the Conducting Nanofilaments in TiO2 and the Resistance Switching Mechanism of TiO2/NiO Stacked Layers (2010) (0)
- Erratum to “Theoretical understanding of the catalyst-free growth mechanism of GaAs “1 1 1”B nanowires” [Appl. Surf. Sci. 496 (2019) 143740] (2020) (0)
- Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HfO2 Thin Films on Si, Si1-xGex and Ge Substrates (2006) (0)
- Two Stable Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti Cells Based on Concurring Phenomena Close to the Pt/TiO 2 Interface (2017) (0)
- Electrical and Structural Properties of High-K HfO2 on Si1-X Gex Substrates (2006) (0)
- Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer (2022) (0)
- Electrode Engineering for Improving Resistance Switching of Sb2O5 Films (2013) (0)
- The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO2 Thin Films by In-Situ NH3 Injection (2006) (0)
- Electrical Characterization of Very Thin SrTiO3 Films for ULSI DRAM Application (1995) (0)
- Combined piezo-force microscopy and conductive atomic-force microscopy for investigating leakage current conduction and local domain structure of PbTiO3 thin films (2007) (0)
- BORON DIFFUSION PROPERTIES AND ELECTRICAL CHARACTERISTICS OF p+ Poly-Si0.73Ge0.27/AlNx/Al2O3/AlNx/n-Si (100) USING IN-SITU ALD (2005) (0)
- Nanosession: Valence Change Memories ‐ Redox Mechanism and Modelling (2013) (0)
- C vacancy on the structural and electronic characteristics of crystalline Zn 2 SnO 4 (2014) (0)
- Atomic layer deposition of PbTiO3 and its component oxide films (2007) (0)
- Finite Element Method Analysis for Temperature Profile of a Planar Multijunction Thermal Converter (2001) (0)
- Understanding the mechanisms involved in photoexcitation of Na Rydberg-Stark manifolds. (2001) (0)
- Resistance switching behavior of atomic layer deposited SrTiO Sr Ti O or Sr Ti O phases (2016) (0)
- Thin Film Multijunction Thermal Converter for Low Input Voltage with Low Frequency (2002) (0)
- Top Electrode Engineering for High‐Performance Ferroelectric Hf 0.5 Zr 0.5 O 2 Capacitors (2023) (0)
- Short course 1: “Memory-Based Technology” (2017) (0)
- Improved Growth Behaviors of SrTiO3 Thin Films Using the Optimized Seed Layer deposited by Atomic Layer Deposition (2009) (0)
- Improvement in the Device Characteristics of Tin Oxide Thin-film Transistors by Adopting Ultralow-Pressure Sputtering (2010) (0)
- Effect of elastic strain and Sc dopant concentration-dependent cell volume on the electrical properties of Epitaxial (Ba,Sr)TiO$_{3}$ thin films (2007) (0)
- Design of a Low-Power and High Performance MAC for CNNs (2008) (0)
- Variations of interface potential barrier height and leakage current of (Ba, Sr)TiO3 thin films deposited by sputtering process (1996) (0)
- 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) Tutorial 1 “MEMS Design and Processing for SDGs” (2018) (0)
- Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics (2017) (0)
- The Load Estimation Algorithm of the Drum Washing Machine using an Inertia Estimator (2009) (0)
- Combination-Encoding Content-Addressable Memory With High Content Density (2019) (0)
- Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere (2023) (0)
- Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN) n /(ScN) m Superlattice (2021) (0)
- Atomic layer deposition(ALD) of Ru thin film on Ta 2 O 5 /Si substrate using RuO 4 precursor and H 2 gas (2018) (0)
- Atomic Layer Deposition Process of Hf‐Based High‐k Gate Dielectric Film on Si Substrate (2012) (0)
- Pad-size Dependence of dc and ac Conduction Behavior of GeSe Thin Film (2011) (0)
- Influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2, Ti0.8)O3 thin films in the self-regulation window (2007) (0)
- Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure (2023) (0)
- Selector Requirements for 3D Resistive Switching Crossbar Array Based on Writing Margin Evaluation (2016) (0)
- Crossbar Memory Using TiO2 Thin Film-based Schottky Diode and Unipolar Switching Cell (2012) (0)
- The Enhanced Nucleation Behavior of Atomic-Layer-Deposited Ru Film on Low-K Dielectrics by UV-O3 Treatment (2007) (0)
- Structural and electrical characterization of MgO thin films grown on various ferromagnetic substrates (2005) (0)
- X-ray Irradiation Induced Colossal Resistance Change in Pt/TiO2/Pt cellss (2013) (0)
- Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure. (2023) (0)
- Atomic layer deposition(ALD) of Ru thin film on Ta2O5/Si substrate using RuO4 precursor and H2 gas (2018) (0)
- Electromechanical properties of Pb(Zr, Ti)03 films for MEMS applications (2003) (0)
- Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect (2018) (0)
- Influence of Deposition Temperature of Atomic-Layer-Deposited HfO2 Films on Interfacial Chemical Structure and Interface Trap Density (2006) (0)
- Magnetic Properties of [Pt/CoFeB/Pt] Thin Films with the Perpendicular Magnetic Anisotropy (2008) (0)
- Structural and Electrical Properties of Ba_ Sr_ TiO_3 Films on Ir and IrO_2 Electrodes (1997) (0)
- An artificial nociceptor based on a diffusive memristor (2018) (0)
- A study on [CoFe/Pt] Multilayer Films with a Perpendicular Magnetic Anisotropy (2007) (0)
- Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading (2022) (0)
- Interfacial chemical bonding-mediated ionic resistive switching (2017) (0)
- Poster: Polar Dielectrics, Optics, and Ionics (2013) (0)
- Position Error Compensation at the Sensorless Control of PMSM using Rectangular 2 Hall Sensors (2009) (0)
- The Effect of Illumination on the Negative Bias Temperature Instability in Zinc Tin Oxide Thin Film Transistors (2010) (0)
- High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications (2014) (0)
- Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics (2019) (0)
- Efficient Method for Error Detection and Correction in In‐Memory Computing Based on Reliable Ex‐Logic Gates (2023) (0)
- The Effect of Light Illumination on Transfer Curve and Stability of Amorphous Hf-In-ZnO Thin Film Transistors (2010) (0)
- Identity of the Conducting Nano-Filaments in TiO2 and Resistance Switching Mechanism of TiO2/NiO Layer (2010) (0)
- Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges (2022) (0)
- ChemInform Abstract: Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen. (2002) (0)
- Evaluation of Ph precursors for liquid injection atomic layer deposition of Pb(ZrxTii.x)O3 thin films (2005) (0)
- Electrical Conductivity of a TiO₂ Thin Film Deposited on Al₂O₃ Substrates by CVD (1995) (0)
- 2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface (Adv. Electron. Mater. 6/2020) (2020) (0)
- Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor (2021) (0)
- Investigation of slow/fast interface states of TiN/Al2O3/p-Si MOS structrure using deep level transient spectroscopy (2003) (0)
- InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework (2020) (0)
- Growth of ternary films in a combination of binary oxide atomic layer depositions (2018) (0)
- Growth of BaTiO3 Thin Films by MOCVD (1993) (0)
- Enhancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering (2021) (0)
- Wearable Electronics: Textile Resistance Switching Memory for Fabric Electronics (Adv. Funct. Mater. 15/2017) (2017) (0)
- Comparison of Electrical and Structural Properties of HfO2 Thin Films on Strained and Relaxed Si1-xGex (2006) (0)
- Thermal Stabililty of Atomic Layer Deposited HfO2 Films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) Precursor and O3 Oxidant (2007) (0)
- Annealing Effects on Interface States and Fixed Charges of TiN/Al2O3/Si MOS structure deposited by Atomic Layer Deposition (2002) (0)
- Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer (2022) (0)
- Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition (2004) (0)
- eWB: Event-Based Weight Binarization Algorithm for Spiking Neural Networks (2021) (0)
- Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor (2023) (0)
- Graph Analysis with Multifunctional Self‐Rectifying Memristive Crossbar Array (2022) (0)
- (Invited) Theoretical Understanding of Nanoscale Ferroelectric Field-Effect-Transistor Having a Poly-Domain Structure (2020) (0)
- The Optimization of $0.5{\mu}m$ SONOS Flash Memory with Polycrystalline Silicon Thin Film Transistor (2012) (0)
- Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution (2023) (0)
- The Contrasting Impacts of the Al 2 O 3 and Y 2 O 3 Insertion Layers on the Crystallization of ZrO 2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022) (2022) (0)
- High-density CMOS Array for Bi-directional Coupling of Electrogenic Cells (2011) (0)
- Oxide semiconductor based charge trap device for vertically integrated NAND flash memory (2017) (0)
- Structure and Electrical Properties of ZrO 2 /Al 2 O 3 /TiO 2 Films Grown Via Atomic Layer Deposition on TiN Electrodes (2018) (0)
- Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al <sub>2</sub> O <sub>3</sub> ‐Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> ‐Al <sub>2 (2022) (0)
- First-principles simulation of domain dynamics and negative capacitance in ultrathin ferroelectric films (2016) (0)
- Engineering of AlON interlayer in Al 2 O 3 /AlON/In 0.53 Ga 0.47 As gate stacks by thermal atomic layer deposition (2018) (0)
- The low-volatage-switching behavior of sol-gel-derived Pb(Zr, Ti)O3 thin film capacitors (2001) (0)
- Resistive Switching Behaviour of SrCoO$_{x}$ thin films (2014) (0)
- Transmission Electron Microscopy Observation of (202) and (211) Twins in Monoclinic ZrO₂ Thin Film (1995) (0)
- (Invited) Atomic-Layer-Deposition of in-Situ Crystallized Ge2Sb2Te5 Alloy and Gete/Sb2Te3 Superlattice, and Their Phase-Change Performances (2020) (0)
- Low-Temperature Plasma Enhanced Atomic Layer Deposition of Silicon Nitride Thin Films for Encapsulation of Flexible OLEDs (2018) (0)
- Initial oxidation of nickel at room temperature (1992) (0)
- Performance Variations of Amorphous-In2Ga2ZnO7 Thin-Film Transistors According to Thin Al2O3 Passivation Layer Deposited by Atomic Layer Deposition (2012) (0)
- Thermal Stability of Stack Structures of AlN and La2O3 Thin Films (2006) (0)
- Amorphous Oxide Semiconductor Memory Using High-k Charge Trap Layer (2010) (0)
- Preparation and characterization of (Ba,Sr)TiO 3 thin films by liquid source chemical vapor deposition (2001) (0)
- Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System (2001) (0)
- Front End of the Line Process (2014) (0)
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What Schools Are Affiliated With Cheol Seong Hwang?
Cheol Seong Hwang is affiliated with the following schools:
