Chih Tang Sah

Chih Tang Sah's AcademicInfluence.com Rankings

Chih Tang Sah

Engineering

#2030

World Rank

#2854

Historical Rank

Applied Physics

#224

World Rank

#233

Historical Rank

Electrical Engineering

#314

World Rank

#355

Historical Rank

engineering Degrees

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Engineering

Chih Tang Sah's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering National Taiwan University

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Chih Tang Sah's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics (1957) (1856)
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ (1966) (586)
Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments (1970) (405)
Fundamentals of Solid State Electronics (1991) (287)
Deactivation of the boron acceptor in silicon by hydrogen (1983) (248)
Characteristics of the metal-Oxide-semiconductor transistors (1964) (244)
The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface (1972) (243)
Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions (1958) (200)
Direct-current measurements of oxide and interface traps on oxidized silicon (1995) (180)
Origin of Interface States and Oxide Charges Generated by Ionizing Radiation (1976) (165)
Nanowatt logic using field-effect metal-oxide semiconductor triodes (1963) (161)
Effect of surface recombination and channel on P-N junction and transistor characteristics (1962) (151)
Frequency dependence of the reverse-biased capacitance of gold-doped silicon P + N step junctions (1964) (149)
Theory and experiments on surface 1/f noise (1972) (139)
Recombination-Generation and Optical Properties of Gold Acceptor in Silicon (1970) (135)
The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors (1966) (134)
Theory of localized states in semiconductors. I. New results using an old method (1974) (123)
Theory of low-frequency generation noise in junction-gate field-effect transistors (1964) (122)
The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers (1967) (112)
Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon (1973) (109)
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON (1969) (107)
Models and experiments on degradation of oxidized silicon (1987) (103)
Theory and experiments of low-frequency generation-recombination noise in MOS transistors (1969) (98)
Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions (1972) (93)
Electronic Processes and Excess Currents in Gold-Doped Narrow Silicon Junctions (1961) (92)
Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies (1984) (92)
Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V Impurities (1971) (90)
Thermal emission and capture of electrons at sulfur centers in silicon (1970) (89)
Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors (2001) (86)
The equivalent circuit model in solid-state electronics—III: Conduction and displacement currents (1970) (84)
Bulk and interface imperfections in semiconductors (1976) (83)
Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST) (1965) (79)
Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences (1983) (76)
Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges (1972) (76)
Effects of Electrons and Holes on the Transition Layer Characteristics of Linearly Graded P-N Junctions (1961) (71)
Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon (1983) (70)
Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection (1982) (69)
Theory of localized states in semiconductors. II. The pseudo impurity theory application to shallow and deep donors in silicon (1974) (69)
Quenched-in centers in silicon p + n junctions (1974) (65)
Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection (1983) (64)
Experiments on the Origin of Process Induced Recombination Centers in Silicon. (1974) (62)
Determination of the MOS oxide capacitance (1975) (62)
Equivalent circuit models in semiconductor transport for thermal, optical, auger‐impact, and tunnelling recombination–generation–trapping processes (1971) (61)
Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress (1996) (60)
A study of oxide traps and interface states of the silicon‐silicon dioxide interface (1980) (60)
A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor (1961) (58)
Degradation of silicon bipolar junction transistors at high forward current densities (1997) (56)
Hydrogenation and annealing kinetics of group‐III acceptors in oxidized silicon (1985) (56)
Hot carriers in silicon surface inversion layers (1974) (54)
Error analysis of surface state density determination using the MOS capacitance method (1969) (54)
GOLD DIFFUSIVITIES IN SiO2 AND Si USING THE MOS STRUCTURE (1966) (51)
Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states (1972) (50)
Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductors (1984) (50)
Complete electrical characterization of recombination properties of titanium in silicon (1984) (49)
Thin oxide thickness extrapolation from capacitance-voltage measurements (1997) (47)
Field dependence of two large hole capture cross sections in thermal oxide on silicon (1983) (47)
Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysis (1969) (47)
Warm and hot carriers in silicon surface-inversion layers (1974) (46)
The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors (1966) (45)
A History of MOS Transistor Compact Modeling (2005) (45)
Thermal Ionization Rates and Energies of Holes at the Double Acceptor Zinc Centers in Silicon (1972) (44)
Two pathways of positive oxide‐charge buildup during electron tunneling into silicon dioxide film (1994) (41)
The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers (1967) (40)
Thermally stimulated capacitance for shallow majority‐carrier traps in the edge region of semiconductor junctions (1973) (40)
Interfacial electronic traps in surface controlled transistors (2000) (39)
Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—I. Theory (1970) (39)
Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer (1972) (38)
Measurement of trapped‐minority‐carrier thermal emission rates from Au, Ag, and Co traps in silicon (1972) (38)
Normal modes of semiconductor p‐n–junction devices for material‐parameter determination (1976) (37)
An MOS-oriented investigation of effective mobility theory (1968) (37)
Frequency response of Si–SiO2 interface states on thin oxide MOS capacitors (1972) (37)
Deactivation of group III acceptors in silicon during keV electron irradiation (1983) (36)
EFFECTS OF X‐RAY IRRADIATION ON THE CHARACTERISTICS OF METAL‐OXIDE‐SILICON STRUCTURES (1966) (36)
Multivalley Effective-Mass Approximation for Donor States in Silicon. II. Deep-Level Group-VI Double-Donor Impurities (1971) (35)
Random telegraphic signals in silicon bipolar junction transistors (1995) (34)
LOW‐TEMPERATURE HIGH‐FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP‐AND SHALLOW‐LEVEL IMPURITY CENTER CONCENTRATIONS (1969) (34)
On the determination of deep level center energy and concentration by thermally stimulated conductivity measurements using reverse-biased p-n junctions☆ (1971) (33)
Fundamentals of Solid-State Electronics: Solution Manual (1996) (32)
Photoionization cross sections of holes at zinc centers in silicon (1973) (32)
Thermal Ionization Rates and Energies of Electrons and Holes at Silver Centers in Silicon (1971) (31)
Monitoring interface traps by DCIV method (1999) (30)
Application of the distributed equilibrium equivalent circuit model to semiconductor junctions (1969) (29)
High frequency space charge layer capacitance of strongly inverted semiconductor surfaces (1974) (29)
Observation of threshold oxide electric field for trap generation in oxide films on silicon (1988) (29)
Theory of impurity states in semiconductors (1972) (29)
A high-low junction emitter structure for improving silicon solar cell efficiency (1978) (28)
Thermal emission of trapped holes in thin SiO2 films (1995) (27)
The spatial variation of the quasi-Fermi potentials in p-n junctions (1966) (27)
Fundamentals of Solid-State Electronics: Study Guide (1993) (26)
Effects of keV electron irradiation on the avalanche‐electron generation rates of three donors on oxidized silicon (1983) (26)
Photoionization of Electrons at Sulfur Centers in Silicon (1971) (26)
Study of thermally induced deep levels in Al doped Si (1977) (25)
Effects of spatially inhomogeneous oxide charge distribution on the MOS capacitance‐voltage characteristics (1974) (25)
THIN‐OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES (1970) (25)
Direct Observation of the Multiplicity of Impurity Charge States in Semiconductors from Low-Temperature High-Frequency Photocapacitance (1969) (24)
New techniques of capacitance-voltage measurements of semiconductor junctions (1982) (24)
Non−Ohmic electron conduction in silicon surface inversion layers at low temperatures (1975) (24)
DCIV diagnosis for submicron MOS transistor design, process, reliability and manufacturing (2001) (23)
A new method for the determination of dopant and trap concentration profiles in semiconductors (1982) (23)
Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors (2001) (22)
A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon (1985) (22)
Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress (1995) (22)
The effects of polarizer ellipticity on ellipsometry measurements (1970) (21)
Photothermal ionization via excited states of sulfur donor in silicon (1971) (20)
Temperature dependence of resistivity and hole conductivity mobility in p-type silicon☆ (1976) (20)
High efficiency crystalline silicon solar cells (1986) (19)
Effects of energy distribution of interface traps on recombination dc current-voltage line shape (2005) (18)
Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect (1967) (18)
Electron capture at the two acceptor levels of a zinc center in silicon (1984) (18)
New method for complete electrical characterization of recombination properties of traps in semiconductors (1985) (17)
Defect Centers in Boron‐Implanted Silicon (1971) (17)
Precise Determination of the Multiphonon and Photon Carrier Generation Properties using the Impurity Photovoltaic Effect in Semiconductors (1967) (17)
On the ‘excess white noise’ in MOS transistors☆ (1969) (17)
Properties of 1 MeV Electron-Irradiated Defect Centers in p-Type Silicon (1972) (16)
Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristics (1975) (16)
Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-concentration profile (2001) (16)
Thermal Emission Rates and Activation Energies of Electrons and Holes at Silver Centers in Silicon (1972) (16)
Trap generation during low‐fluence avalanche‐electron injection in metal‐oxide‐silicon capacitors (1985) (16)
Thermal capture of electrons and holes at zinc centers in silicon (1973) (16)
Current saturation and drain conductance of junction-gate field-effect transistors (1967) (16)
New integral representations of circuit models and elements for the circuit technique for semiconductor device analysis (1987) (16)
Observation of Mobility Anisotropy of Electrons on (110) Silicon Surfaces at Low Temperatures (1972) (15)
Two-dimensional numerical analysis of the narrow gate effect in MOSFET (1983) (15)
Quantitative analysis of the effects of steady-state illumination on the MOS-capacitor—II. Experimental results (1970) (14)
Series equivalent circuit representation of SiO2Si interface and oxide trap states (1973) (14)
Separation of interface and nonuniform oxide traps by the DC current-voltage method (1996) (14)
Low frequency conductance voltage analysis of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors (2000) (14)
Correlation of experiments with a two-section-model theory of the saturation drain conductance of MOS transistors (1968) (14)
Evidence of discrete interface traps on thermally grown thin silicon oxide films (1999) (14)
Effects of inhomogeneities of surface-oxide charges on the electron energy levels in a semiconductor surface-inversion layer (1974) (13)
Exact capacitance of a lossless MOS capacitor (1976) (13)
EXTENSION OF THE McNUTT-SAH METHOD FOR MEASURING THIN OXIDE THICKNESSES OF MOS DEVICES (1998) (13)
Thermally generated electron traps in boron‐implanted, phosphorus‐doped silicon (1985) (13)
Frequency response of the surface state admittance in weakly inverted thin SiO2–Si MOS capacitors (1972) (12)
Lumped model analysis of the low frequency generation noise in gold-doped silicon junction-gate field-effect transistors (1969) (12)
Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon (1984) (12)
Small-signal equivalent π networks for carrier generation--recombination--trapping at imperfection centres in semiconductors (1971) (12)
Transport in semiconductors with low scattering rate and at high frequencies (1973) (12)
New mobility-measurement technique on inverted semiconductor surfaces near the conduction threshold (1979) (12)
Positive oxide charge from hot hole injection during channel-hot-electron stress (1998) (12)
Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. bias (1973) (12)
Theory and experiments on the 1/f surface noise of MOS insulated-gate field-effect transistors (1964) (11)
Detection of recombination centers in solar cells from junction capacitance transients (1977) (11)
New experimental method for extracting the density and generation annealing rates of interface and oxide traps (1986) (11)
Design considerations for silicon HLE solar cells (1978) (11)
Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells (1975) (11)
Threshold voltage models of the narrow-gate effect in micron and submicron MOSFETs (1988) (11)
Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon exposed to keV electrons (1986) (11)
Spherical-Square-Well Defect-Potential Model for 1-MeV Electron Irradiated Defects in Silicon (1973) (11)
Reduction of interface traps in p-channel MOS transistors during channel-hot-hole stress (1998) (11)
Effect of hydrogen chloride during oxidation of silicon on trap generation by avalanche electron injection (1986) (10)
Temperature dependence of surface recombination current in MOS transistors (2001) (10)
New method for separating and characterizing interface states and oxide traps on oxidized silicon (1986) (10)
Reduction of solar cell efficiency by bulk defects across the back-surface-field junction (1982) (10)
Theory of thermally stimulated charges in metal–oxide–semiconductor gate oxide (1998) (10)
Hydrogenation and annealing kinetics in boron‐ and aluminum‐doped silicon (1986) (10)
Deionization effect on the evaluation of hole mobility in p-Si (1977) (10)
Generation-annealing of oxide and interface traps at 150 and 298 K in oxidized silicon stressed by Fowler-Nordheim electron tunneling (1988) (10)
Deep level profiles in boron implanted n‐Si (1982) (10)
A distributed gate bistable MOS transistor (1971) (10)
The current-voltage characteristics of field-effect transistors with short channels (1976) (10)
Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors (1997) (9)
Two deep hole traps in boron‐implanted phosphorus‐doped silicon (1985) (9)
Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling (2006) (9)
Experimental determination of the stored charge and effective lifetime in the emitter of junction transistors (1977) (9)
Studies of electron screening effects on the electron mobility in silicon surface inversion layers (1976) (9)
Thermal emission rates and activation energies of electrons at tantalum centers in silicon (1976) (9)
Circuit technique for semiconductor-device analysis with junction diode open circuit voltage decay example (1988) (9)
Matrix analysis of distributed semiconductor circuit models (1973) (9)
Theory of concentration profiling technique for semiconductors with many deep levels (1982) (9)
Hydrogenation of boron acceptor in silicon during electron injection by Fowler−Nordheim tunneling (1987) (8)
Photoionization cross sections of a two-electron donor center in silicon (1976) (8)
The ultimate limits of CCD performance imposed by hot electron effects (1979) (8)
Computer-aided study of steady-state carrier lifetimes under arbitrary injection conditions (1979) (8)
CURRENT-ACCELERATED CHANNEL HOT CARRIER STRESS OF MOS TRANSISTORS (1998) (8)
Temperature and field dependences of the generation-recombination noise and the thermal emission rates at the gold acceptor center in silicon☆ (1970) (8)
Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors (2004) (7)
Transient response of MOS capacitors under localized photoexcitation (1974) (7)
Measurements of the Thermal‐Emission Rates of Electrons and Holes at the Gold Centers in Silicon Using the Small‐Signal‐Pulsed Field Effect (1970) (7)
A slide rule for computing U F and the bulk doping from MIS-capacitor high-frequency C-V curves (1969) (7)
Multi-valley effective-mass approximation of shallow donor levels in silicon (1970) (6)
Thermal emission and capture rates of holes at the gold donor level in silicon (1987) (6)
The spatial variation of the charged gold concentration in silicon p-n step junctions (1968) (6)
Solid State Physics View of Liquid State Chemistry——Electrical conduction in pure water (2013) (6)
Solid State Physics View of Liquid State Chemistry——Electrical conduction in pure water (2013) (6)
High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors (2008) (6)
OBSERVATION OF THE IDEAL GENERATION‐RECOMBINATION NOISE SPECTRUM AND SPECTRA WITH VOLTAGE VARIABLE RELAXATION TIME IN GOLD‐DOPED SILICON (1969) (6)
Effect of diffusion current on the device characteristics of insulated-gate field-effect transistors (1965) (6)
Recombination centers in aluminum‐doped silicon diffused in high phosphorus concentration (1977) (6)
Electron recombination rates at the gold acceptor level in high‐resistivity silicon (1986) (6)
Reduction of solar cell efficiency by edge defects across the back-surface-field junction:— A developed perimeter model☆ (1982) (6)
Junction edge region thermally stimulated capacitance (TSCAP) of n ‐Si doped with phosphorus and bismuth (1974) (5)
Dipole scattering at the SiSiO2 interface (1975) (5)
Analysis of the narrow gate effect in submicrometer MOSFET's (1983) (5)
Interconnect and MOS transistor degradation at high current densities (1999) (5)
Thickness dependences of solar cell performance (1982) (5)
Linear reduction of drain current with increasing interface recombination in nMOS transistors stressed by channel hot electrons (1997) (5)
Accuracy of Surface-Potential-Based Long–Wide-Channel Thick-Base MOS Transistor Models (2007) (5)
Measurement of built-in electric field in base of Si/GexSi1–x/Si HBT with linearly-graded Ge profile (1996) (5)
Characteristics of 1.0 MeV electron-irradiated surface-controlled silicon junction diodes (1973) (5)
Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell (1981) (5)
High frequency hot electron conductivity and admittance in Si and Ge (1975) (4)
Characteristics of solar cells on granular semiconductors (1976) (4)
Microscopic Theory of Energy Distribution of SiO2/Si Interface Traps: A Survey of History and Some New Results (2006) (4)
Quantitative analysis of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors with linearly graded Ge profile (1999) (4)
Performance comparison analysis of GeSi and Si bipolar transistors (1996) (4)
Generation-recombination-trapping at interface traps in short-channel MOS transistors (2006) (4)
Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons (1988) (4)
Geometrical dependences of the low-frequency generation-recombination noise in mos transistors (1969) (4)
Performance improvements from penetrating back‐surface field in a very high efficiency terrestrial thin‐film crystalline silicon solar cell (1984) (4)
The Driftless Electromigration Theory *,** (Diffusion-Generation-Recombination-Trapping) (2008) (3)
Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures (2006) (3)
Floating-Emitter Solar-Cell Transistor (1986) (3)
Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors (2004) (3)
Experimental MOS C-V data in strong inversion (1978) (3)
Differential equation solutions of MOS transmission line models generalized to lossy cases (1978) (3)
Effects of avalanche injection currents on the endurance of Si MOS devices (1982) (3)
Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models (2006) (3)
EFFECTS OF MULTIPLY‐CHARGED GOLD IMPURITY ON THE BREAKDOWN VOLTAGE OF SILICON P‐N JUNCTIONS (1968) (3)
Study of relationships of material properties and high efficiency solar cell performance on material composition (1983) (2)
Trap controlled minority-carrier mobility in heavily doped silicon (1985) (2)
Trapping Noise in Charge Coupled Devices (1979) (2)
Physics underlying improved efficiency of high-low-junction emitter silicon solar cells (1977) (2)
Experimental investigation of the excess charge (1977) (2)
Implementin spatial variation of impurity concentration in MOS transistor modeling (2006) (2)
Optimized Threshold-Voltage MOS Transistor Compact Model from the 4-Component Theory (2005) (2)
Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies (1982) (2)
Annealing of interface states on oxidized silicon during chip bonding (1987) (2)
Barriers to achieving high efficiency (1984) (2)
Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells (1976) (2)
Junction modeling for solar cells—Theory and experiment (1976) (2)
A quasi-three-dimensional large-signal circuit model for lateral transient analysis of MOS device (1980) (2)
Profiles and annealing of thermally generated electron traps in boron‐implanted phosphorus‐doped silicon (1986) (2)
Interface edge effect and its contribution to the frequency dispersion of metal-oxide-semiconductor admittance (1981) (2)
Theory- and experiment of electron mobility on silicon surface in weak inversion (1980) (2)
Group-VI donor impurities in silicon (1971) (2)
Origins of Interface States and Oxide Charges Generated by Ionizing Radiation in Metal-Oxide-Silicon Structures. (1976) (2)
Ion Product of Pure Water Characterized by Physics-Based Water Model (2016) (1)
Studies of Water V. Five Phonons in Protonic Semiconductor Lattice Model of Pure Liquid Water (2017) (1)
Process-induced defects in terrestrial solar cells (1975) (1)
Electrical Mobility of Protons and Proton-Holes in Pure Water Characterized by Physics-Based Water Model (2016) (1)
Extraction of impurity concentration profiles by the DCIV method (2001) (1)
Reply to ’’Comments on ’Normal modes of semiconductor p‐n‐junction devices for material‐parameter determination’ ’’ (1981) (1)
Experimental evidences of the interdependences of the fixed charges, the chargeable surface states and the bulk impurity recombination states in the silicon-oxide silicon structures (1965) (1)
Thermal Emission Rates and Activation Energies of Electrons and Holes at Cobalt Centers in Silicon (1972) (1)
Recombination phenomena in high efficiency silicon solar cells (1985) (1)
Effect of surface recombination and channel on diode and transistor characteristics (1961) (1)
Important loss mechanisms in high-efficiency solar cells (1984) (1)
Studies of Extrinsic Silicon Infrared Detectors. (1977) (1)
Comments on ’’Effects of spatially inhomogeneous oxide charge distribution on the MOS capacitance‐voltage characteristics’’ (1975) (1)
Noise in charge coupled devices (1978) (1)
ccelerated Reverse Emitter-Base odologies and Time-to-Failure (1996) (1)
Interface trap generation in MOS transistors at high current densities (1998) (1)
Proton Transports in Pure Liquid Water Characterized by Melted Ice Lattice Model. (2017) (1)
Differential d.c. conductance of a p-n-junction space-charge region (1972) (1)
Temperature dependences of surface recombination DC current–voltage characteristics in MOS structures (2006) (1)
Electrical Conduction in Pure Water - Trapping and Scattering of Positive Protons and Negative Proton Holes (2015) (1)
A DISTORTION ANALYSIS OF THE MOS TRANSISTOR. (1966) (0)
Basic mechanisms governing solar-cell efficiency (1976) (0)
Requirements for high-efficiency solar cells (1986) (0)
Multiple Protonic Kinetic Energy Band Models of Melted Ice Periodic Lattice for Pure Liquid Water (2019) (0)
Distribution of Recombination Cur- rent in Emitter-Base Junctions of (1961) (0)
Loss mechanisms in high-efficiency solar cells: Study of material properties and high-efficiency solar-cell performance on material composition: Project tasks (1985) (0)
A New Model of Negative Photoconduction (1970) (0)
Solid State Materials and Devices (1973) (0)
Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS Transistors (2008) (0)
Study of the effects of impurities on the properties of silicon solar cell (1981) (0)
Theoretical performance limits and measured performance of thin extended BSF P/N junction silicon solar cells (1984) (0)
Design, Error Analysis and Operation of a Noise Autocorrelator. (1978) (0)
Effect of Temperature on Surface Recombination Current at SiO$_{2}$/Si Interface Traps (2005) (0)
Protonic Bipolar Semiconductor Melted Ice Periodic Lattice Model Explains the Abnormally High Electrical Mobility of Positive and Negative Ions in Pure Liquid Water. (2020) (0)
Energy Distribution of SiO2/Si Interface Traps: Experiments and Theory (2007) (0)
Studies of Water VI. One-Band, Two-Band and Three-Band, Trappy, Protonic, Semiconductor Lattice Models for Pure Liquid Water (2018) (0)
Effects of ionizing radiation on the characteristics of metal--oxide--silicon structures. Final report, 9 Aug 1974--9 Mar 1975 (1975) (0)
Thermal and optical emission rates and cross sections from the impurity photocurrent and photocapacitance methods (1969) (0)
Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells (1977) (0)
Comments on "Calculation of Microwave Performance of Buffer Layer Gate GaAs MESFET's" (1979) (0)
Semiconductor Oxide Interface States. (1981) (0)
NOISE SOURCES IN METAL--OXIDE--SEMICONDUCTOR AND JUNCTION FIELD-EFFECT TRANSISTORS. (1969) (0)
Computed Lattice Vibration Frequency Spectra Explain the Abnormally High Electrical Mobilities of Positive and Negative Ions in Pure Liquid Water Using the Vibrational Force Constants of Oxygen and Hydrogen (Proton) Nuclei in its Solid and Gas Phases. (2020) (0)
Complete Lattice Vibration Dispersion Curves (36 Branches) for the Frozen (T=0K) Bernal-Fowler Hexagonal Close Packed Crystalline Ice with Four Water Molecules in One Primitive Unit Cell Containing 8 Protons and 4 Oxygen Nuclei (2020) (0)
Electronics, Protonics, Nucleonics, "Phononics", Photonics - Massonics (2018) (0)
On the 'Excess White Noise' in MOS(Metal Oxide Semiconductors) Transistors (1970) (0)
CO 00 1 ßf $ K 37 / ON THE " EXCESS WHITE NOISE " IN MOS TRANSISTORS (2013) (0)
Effects of Concentration and Energy Distribution of Electronic Interface Traps on Electrical Characteristics of Metal-Oxide-Silicon (MOS) Capacitors and Transistors. (2007) (0)
Concentration profile and effective concentration in acceptor hydrogenation experiments (1987) (0)
Investigation of Charge Coupled Devices for Signal Processing. (1980) (0)
Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I . Effects of Remote Boundary Conditions and Body Contacts (2007) (0)
The bipolar theory of the Bipolar Field-Effect Transistor: Recent advances (2008) (0)
The Earthling Model for Physics -- the Melt Ice Lattice of the Protonic Semiconductor Liquid Water. (2017) (0)
CO 00 1 ßf $ K 37 / ON THE " EXCESS WHITE NOISE " IN MOS TRANSISTORS (2013) (0)
Effects of hydrogen chloride on boron acceptor hydrogenation and trap generation‐annealing in oxidized silicon irradiated by keV electrons (1988) (0)
A Computer-Automated Temperature Control System for Semiconductor Measurements. (1979) (0)
Excess Currents in Semiconductor Tunneling (1969) (0)
C-V Profiling of GaAs FET Films (1978) (0)
Effects of hydrogen chloride on the annealing kinetics of interface and oxide traps in oxidized silicon stressed by avalanche electron injection (1988) (0)
Effects of Ionizing Radiation on the Characteristics of Metal-Oxide-Silicon Structures. (1975) (0)
Physical Model for Contact ~e~ra~~tion Current Densities (1997) (0)
Phonon Assisted Unipolar and Bipolar Trappy Protonic Transport in Pure Water on Melted Ice Lattice (2018) (0)
Erratum: ‘‘Hydrogenation kinetics in oxidized boron‐doped silicon irradiated by keV electrons’’ [J. Appl. Phys. 64, 1950(1988)] (1989) (0)
Accuracy of Boltzmann Full-impurity-ionization Approximation on Surface Recombination DC Current-Voltage Characteristics. (2005) (0)
ing Interface Traps in MOS Transistors (1996) (0)
Effect of the bulk charge on the thermal noise in metal-oxide-silicon field-effect transistors (1965) (0)
The driftless and electron-windless electromigration theory (2008) (0)

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