Chris G. Van de Walle | Academic Influence

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Chris G. Van de Walle

Physics

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Physics

Chris G. Van de Walle's Degrees

PhD Physics Stanford University
Masters Physics Stanford University

Why Is Chris G. Van de Walle Influential?

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According to Wikipedia, Chris G. Van de Walle is a Professor in the Materials Department at the University of California, Santa Barbara. He received a Ph.D. in Electrical Engineering from Stanford University in 1986. Prior to joining UCSB in 2004, he was a Principal Scientist at the Xerox Palo Alto Research Center . His research interests include first-principles calculations for materials, defects and doping in semiconductors and oxides, surfaces and interfaces, and the physics of hydrogen in materials. Van de Walle is a Fellow of the APS, MRS, AAAS, AVS, and IEEE. He is the recipient of a Humboldt Research Award for Senior US Scientist, the Medard W. Welch Award, and the David Adler Lectureship Award in the Field of Materials Physics from the APS.

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Chris G. Van de Walle's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Fundamentals of zinc oxide as a semiconductor (2009) (3204)
First-principles calculations for defects and impurities: Applications to III-nitrides (2004) (2360)
Band lineups and deformation potentials in the model-solid theory. (1989) (1614)
Native point defects in ZnO (2007) (1496)
First-principles study of native point defects in ZnO (2000) (1492)
First-principles calculations for point defects in solids (2014) (1358)
Universal alignment of hydrogen levels in semiconductors, insulators and solutions (2003) (1009)
Gallium vacancies and the yellow luminescence in GaN (1996) (979)
Oxygen vacancies in ZnO (2005) (976)
Fully ab initio finite-size corrections for charged-defect supercell calculations. (2009) (732)
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) (655)
Oxygen vacancies and donor impurities in β-Ga2O3 (2010) (653)
Hydrogen multicentre bonds. (2007) (605)
Quantum computing with defects (2010) (562)
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation (1999) (545)
Carbon impurities and the yellow luminescence in GaN (2010) (494)
Hybrid functional studies of the oxygen vacancy in TiO 2 (2010) (441)
Heterojunction band offset engineering (1996) (374)
Why nitrogen cannot lead to $p$-type conductivity in ZnO (2009) (338)
Electrostatic interactions between charged defects in supercells (2011) (329)
New insights into the role of native point defects in ZnO (2006) (321)
Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides (2012) (317)
Sources of electrical conductivity in SnO2. (2008) (300)
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN (2014) (279)
ENERGETICS AND ELECTRONIC STRUCTURE OF STACKING FAULTS IN ALN, GAN, AND INN (1998) (274)
Direct view at excess electrons in TiO2 rutile and anatase. (2014) (268)
Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors (2006) (263)
Defect analysis and engineering in ZnO (2001) (261)
Role of hydrogen in doping of GaN (1996) (259)
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. (2011) (241)
Microscopic origins of surface states on nitride surfaces (2007) (235)
Hydrogenated cation vacancies in semiconducting oxides (2011) (232)
Experimental electronic structure of In2O3 and Ga2O3 (2011) (229)
Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition (2000) (219)
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride (2002) (211)
Diffusivity of native defects in GaN (2004) (210)
Brillouin zone and band structure of β‐Ga2O3 (2015) (206)
Energies of various configurations of hydrogen in silicon. (1994) (199)
INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN (1997) (197)
First-principles surface phase diagram for hydrogen on GaN surfaces. (2002) (189)
Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials (2000) (187)
Theory of doping and defects in III–V nitrides (1998) (180)
Shallow versus deep nature of Mg acceptors in nitride semiconductors. (2012) (178)
Native point defects and dangling bonds in α-Al2O3 (2013) (177)
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces (2011) (171)
Theoretical study of Si/Ge interfaces (1985) (163)
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices (2011) (162)
First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres (2014) (160)
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates (2010) (159)
Computationally predicted energies and properties of defects in GaN (2017) (158)
Energy levels of isolated interstitial hydrogen in silicon (2001) (156)
Oxide interfaces for novel electronic applications (2014) (153)
Structural and electronic properties of Ga2O3-Al2O3 alloys (2018) (152)
Mechanism of Visible‐Light Photocatalysis in Nitrogen‐Doped TiO2 (2011) (148)
Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for the silicon self-interstitial. (2008) (141)
Hydrogen doping in indium oxide: An ab initio study (2009) (141)
Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films (2015) (136)
Dual behavior of excess electrons in rutile TiO2 (2012) (136)
Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN (2009) (133)
Hydrogen passivation effect in nitrogen-doped ZnO thin films (2005) (133)
Vacancies and small polarons in SrTiO 3 (2014) (130)
Doping of AlxGa1−xN (1998) (130)
Tin dioxide from first principles: Quasiparticle electronic states and optical properties (2011) (129)
The electronic structure of β-Ga2O3 (2010) (128)
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO. (2012) (123)
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well. (2012) (123)
First-principles optical spectra for F centers in MgO. (2012) (120)
First-principles studies of beryllium doping of GaN (2001) (117)
Small valence-band offsets at GaN/InGaN heterojunctions (1997) (116)
HYDROGEN IN SEMICONDUCTORS (2006) (115)
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces (2006) (111)
Absolute deformation potentials and band alignment of wurtzite ZnO, MgO, and CdO (2007) (109)
Role of nitrogen vacancies in the luminescence of Mg-doped GaN (2012) (108)
LDA + U and hybrid functional calculations for defects in ZnO, SnO2, and TiO2 (2011) (108)
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices (2013) (107)
Phonon-assisted optical absorption in silicon from first principles. (2012) (106)
Origins of optical absorption and emission lines in AlN (2014) (106)
Theoretical calculations of semiconductor heterojunction discontinuities (1986) (102)
Fundamental limits on the electron mobility of β-Ga2O3 (2017) (102)
Deep acceptors and their diffusion in Ga2O3 (2019) (97)
Effects of doping on the lattice parameter of SrTiO3 (2012) (96)
Nature and evolution of the band-edge states in MoS 2 : From monolayer to bulk (2014) (96)
First‐principles theory of acceptors in nitride semiconductors (2015) (96)
Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures (2010) (93)
Interactions between nitrogen, hydrogen, and gallium vacancies inGaAs1−xNxalloys (2003) (91)
Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory (2009) (88)
Effects of impurities on the lattice parameters of GaN (2003) (86)
Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors (1998) (86)
Ambipolar doping in SnO (2013) (85)
Strategies for Controlling the Conductivity of Wide-Band-Gap Semiconductors (2002) (84)
Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films (2015) (84)
Chemical trends for acceptor impurities in GaN (1999) (84)
Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon (1999) (83)
Monolayer to Bulk Properties of Hexagonal Boron Nitride (2018) (83)
Effects of hydrogen on the electronic properties of dilute GaAsN alloys. (2002) (82)
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices (2013) (82)
Acceptor doping in ZnSe versus ZnTe (1993) (82)
Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy (2002) (82)
Chaperonin-mediated stabilization and ATP-triggered release of semiconductor nanoparticles (2003) (81)
Role of charged defects and impurities in kinetics of hydrogen storage materials: A first-principles study (2007) (80)
Sources of unintentional conductivity in InN (2008) (80)
Hybrid functional calculations of D X centers in AlN and GaN (2014) (79)
Effects of strain on the band structure of group-III nitrides (2014) (77)
First-principles characterization of native-defect-related optical transitions in ZnO (2017) (77)
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters (2016) (77)
Controlling the density of the two-dimensional electron gas at the SrTiO 3 /LaAlO 3 interface (2012) (76)
BaSnO3 as a channel material in perovskite oxide heterostructures (2016) (76)
Shallow donor state of hydrogen in indium nitride (2003) (76)
Comment on ‘‘Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing’’ [Appl. Phys. Lett. 68, 2526 (1996)] (1996) (74)
Distribution of donor states on etched surface of AlGaN/GaN heterostructures (2010) (73)
Fluorine-Silicon Reactions and the Etching of Crystalline Silicon (1988) (72)
Reconstructions and origin of surface states on AlN polar and nonpolar surfaces (2009) (72)
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2 (2011) (72)
Absolute surface energies of polar and non-polar planes in GaN (2013) (71)
Role of Si and Ge as impurities in ZnO (2009) (69)
Surface reconstructions on InN and GaN polar and nonpolar surfaces (2007) (69)
CLEAN AND AS-COVERED ZINC-BLENDE GAN(001) SURFACES : NOVEL SURFACE STRUCTURES AND SURFACTANT BEHAVIOR (1997) (69)
Passivation and doping due to hydrogen in III-nitrides (2001) (68)
Role of oxygen vacancies in crystalline WO3 (2016) (67)
First-principles investigation of visible light emission from silicon-based materials. (1993) (67)
Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities (2011) (67)
Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions (2010) (65)
( In x Ga 1 − x ) 2 O 3 alloys for transparent electronics (2015) (64)
Advances in electronic structure methods for defects and impurities in solids (2011) (64)
Band parameters and strain effects in ZnO and group-III nitrides (2010) (63)
Controlling n-Type Doping in MoO3 (2017) (63)
Controlling the conductivity of InN (2010) (63)
Defects in SiC for quantum computing (2011) (62)
Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride (2019) (61)
Structure, energetics, and dissociation of Si-H bonds at dangling bonds in silicon. (1994) (61)
Defects as qubits in 3 C - and 4 H -SiC (2015) (61)
Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides (2016) (61)
Hydrogen as a shallow center in semiconductors and oxides (2003) (60)
First-Principles Analysis of Radiative Recombination in Lead-Halide Perovskites (2018) (59)
Effects of strain on the electron effective mass in GaN and AlN (2013) (59)
Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment (2004) (59)
Strain effects and band parameters in MgO, ZnO, and CdO (2012) (58)
Theory of Point Defects and Complexes in GaN (1995) (57)
Self-consistent band-gap corrections in density functional theory using modified pseudopotentials (2007) (57)
Arsenic impurities in GaN (2000) (55)
Vacancy defects in indium oxide: An ab-initio study (2011) (54)
Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides (2015) (54)
Iron as a source of efficient Shockley-Read-Hall recombination in GaN (2016) (53)
Electronic structure of nitride surfaces (2007) (53)
Structural origins of the properties of rare earth nickelate superlattices (2013) (53)
Microscopic theory of hydrogen in silicon devices (2000) (52)
Universal alignment of hydrogen levels in semiconductors and insulators (2006) (51)
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors (2014) (51)
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors (2016) (50)
Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters. (2019) (49)
Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites (2021) (49)
Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits (2014) (48)
Limitations to the room temperature mobility of two- and three-dimensional electron liquids in SrTiO3 (2015) (48)
Unexpectedly Strong Auger Recombination in Halide Perovskites (2018) (48)
Hydrogen interactions with acceptor impurities in Sn02: First-principles calculations (2009) (47)
First-principles study of van der Waals interactions in MoS2 and MoO3 (2014) (47)
Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces (2010) (47)
First-principles study of the formation and migration of native defects in NaAlH4 (2009) (45)
Formation and migration of charged native point defects in MgH 2 : First-principles calculations (2009) (45)
Group-V impurities in SnO2 from first-principles calculations (2010) (44)
Dangling bonds and vacancies in germanium (2013) (44)
Donor defects and small polarons on the TiO2(110) surface (2016) (43)
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 (2019) (43)
Correctly Assessing Defect Tolerance in Halide Perovskites (2020) (43)
Band discontinuities at heterojunctions between crystalline and amorphous silicon (1995) (42)
Structural identification of hydrogen and muonium centers in silicon: First-principles calculations of hyperfine parameters. (1990) (42)
Native defects and impurities in GaN (1996) (42)
Hydrogen donors in SnO 2 studied by infrared spectroscopy and first-principles calculations (2010) (40)
Defect identification based on first-principles calculations for deep level transient spectroscopy (2018) (40)
Identification of hydrogen configurations in p-type GaN through first-principles calculations of vibrational frequencies (2003) (39)
First‐Principles Simulation of Carrier Recombination Mechanisms in Halide Perovskites (2019) (38)
Carbon as a Shallow Donor in Transparent Conducting Oxides (2014) (38)
Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlattices (1990) (37)
Electron and chemical reservoir corrections for point-defect formation energies (2016) (37)
Three-Dimensional Spin Texture in Hybrid Perovskites and Its Impact on Optical Transitions. (2018) (37)
Band alignments and polarization properties of BN polymorphs (2014) (36)
Accurate and efficient band-offset calculations from density functional theory (2018) (36)
Doping of AlxGa1−xN alloys (1999) (36)
Iodine interstitials as a cause of nonradiative recombination in hybrid perovskites (2020) (35)
Structure and energetics of nitride surfaces under MOCVD growth conditions (2003) (35)
Theoretical aspects of hydrogen in crystalline semiconductors (1991) (35)
ENERGETICS OF BOND-CENTERED HYDROGEN IN STRAINED SI-SI BONDS (1995) (35)
STRETCHED-EXPONENTIAL RELAXATION MODELED WITHOUT INVOKING STATISTICAL DISTRIBUTIONS (1996) (35)
A pathway to p-type wide-band-gap semiconductors (2009) (35)
Surface structures, surfactants and diffusion at cubic and wurtzite GaN (1998) (35)
First-principles study of vacancy-assisted impurity diffusion in ZnO (2014) (34)
Hybrid functional calculations of point defects and hydrogen inSrZrO3 (2014) (34)
Effect of transition-metal additives on hydrogen desorption kinetics of MgH2 (2013) (34)
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. (2013) (33)
Point defects in Al2O3 and their impact on gate stacks (2009) (32)
Insulating state of ultrathin epitaxial LaNiO{sub 3} thin films detected by hard x-ray photoemission (2011) (32)
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells (2010) (31)
First-principles study of the mobility of SrTiO 3 (2014) (31)
Defects in AlN as candidates for solid-state qubits (2016) (30)
Mechanism for the decomposition of lithium borohydride (2012) (30)
Strained-layer interfaces between II-VI compound semiconductors (1988) (30)
Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain. (2017) (30)
Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN (2013) (30)
HYDROGEN IN SILICON : FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES (1998) (30)
Hydrogen as a cause of doping in ZnO (2001) (30)
Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs (2008) (29)
Hydrogenated vacancies and hidden hydrogen in SrTiO3 (2014) (29)
Role of hydrogen in surface reconstructions and growth of GaN (2002) (29)
Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy (2008) (29)
A first-principles understanding of point defects and impurities in GaN (2021) (29)
Posner molecules: from atomic structure to nuclear spins. (2017) (29)
Stability, diffusivity, and vibrational properties of monatomic and molecular hydrogen in wurtzite GaN (2003) (28)
Hydrogen-related defects and the role of metal additives in the kinetics of complex hydrides: A first-principles study (2009) (28)
Small polarons and point defects in barium cerate (2015) (28)
Defects at Ge/oxide and III-V/oxide interfaces (2013) (28)
Doping of AlGaN alloys (1999) (28)
The ternary system Au–Mn–Sb and the AuMnSn1−xSbx phase (2003) (27)
Mechanisms for the decomposition and dehydrogenation of Li amide/imide (2012) (27)
Role of point defects in the electrical and optical properties of In2O3 (2019) (27)
Computational studies of conductivity in wide-band-gap semiconductors and oxides (2008) (26)
Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy (2013) (25)
Impact of native defects in high‐k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices (2013) (24)
Native point defects in LaAlO3: A hybrid functional study (2013) (24)
The particle-size dependence of the activation energy for decomposition of lithium amide. (2011) (24)
Phase transformations upon doping in WO3. (2017) (24)
Exchange of deeply trapped and interstitial hydrogen in silicon (1999) (23)
Hydrogen in semiconductors and insulators (2007) (23)
Native Defects and Impurities in Cubic and Wurtzite Gan (1994) (23)
Doping limits in ZnSe (1993) (22)
Hybrid functional calculations of native point defects in InN (2012) (22)
Optimizing Proton Conductivity in Zirconates through Defect Engineering (2019) (22)
Defects and defect reactions in semiconductor nitrides (1999) (22)
Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon (1994) (22)
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates (2010) (22)
Optimizing optical absorption of TiO2 by alloying with TiS2 (2008) (22)
Entropy-driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaN. (2001) (21)
Role of atomic multiplets in the electronic structure of rare-earth semiconductors and semimetals. (2008) (21)
Physics and chemistry of hydrogen in the vacancies of semiconductors (2003) (21)
Deep donor state of the copper acceptor as a source of green luminescence in ZnO (2017) (21)
Theory of Point Defects and Interfaces (1996) (20)
Small hole polarons in rare-earth titanates (2015) (19)
Interband and polaronic excitations in YTiO 3 from first principles (2014) (19)
Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. (2012) (19)
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films (2021) (19)
Ferroelastic switching of doped zirconia: Modeling and understanding from first principles (2014) (19)
Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations (2015) (18)
Controlling the Conductivity in Oxide Semiconductors (2012) (18)
Structural and electronic properties of SrZrO 3 and Sr(Ti,Zr)O 3 alloys (2015) (18)
Nitrogen doping in ZnSe and ZnTe (1995) (17)
Mutual passivation of electrically active and isovalent impurities in dilute nitrides. (2008) (17)
Structure and energetics of LaAlO 3 (001) surfaces (2014) (17)
Theoretical Study of Semiconductor Interfaces (1985) (17)
Turning SrTiO3 into a Mott insulator (2014) (17)
Electronic materials theory: Interfaces and defects (2003) (16)
Point defects, impurities, and small hole polarons in GdTiO$_3$ (2016) (16)
Ion-Transport Engineering of Alkaline-Earth Hydrides for Hydride Electrolyte Applications (2018) (15)
Acceptor doping in the proton conductor SrZrO3. (2017) (15)
Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates (2008) (14)
First-principles calculations of hyperfine interaction, binding energy, and quadrupole coupling for shallow donors in silicon (2020) (14)
Effect of Titanium Induced Chemical Inhomogeneity on Crystal Structure, Electronic Structure, and Optical Properties of Wide Band Gap Ga2O3 (2020) (14)
Calcium as a nonradiative recombination center in InGaN (2017) (14)
Erratum: Tin dioxide from first principles: Quasiparticle electronic states and optical properties [Phys. Rev. B 83, 035116 (2011)] (2013) (14)
Conditions for T2 resistivity from electron-electron scattering (2017) (14)
All-inorganic halide perovskites as candidates for efficient solar cells (2021) (14)
Role of hydrogen at germanium/dielectric interfaces (2008) (14)
BAND OFFSETS AT STRAINED-LAYER INTERFACES (1987) (13)
Hydrogen in GaN (1995) (12)
First-principles study of bandgap bowing in BGaN alloys (2019) (12)
First-principles study of surface charging in LaAlO 3 /SrTiO 3 heterostructures (2015) (12)
Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (12)
Strategies for p-type doping of ZnGeN2 (2019) (12)
Limitations of In2O3 as a transparent conducting oxide (2019) (11)
Electrical activity of hydrogen impurities in GaSb : First-principles calculations (2008) (11)
Alternative sources of p-type conduction in acceptor-doped ZnO (2010) (11)
Sulfur doping of AlN and AlGaN for improved n‐type conductivity (2015) (11)
Spinning up quantum defects in 2D materials (2020) (11)
Carbon-induced trapping levels in oxide dielectrics (2015) (11)
First-principles study of high-field-related electronic behavior of group-III nitrides (2014) (11)
ATOMIC AND ELECTRONIC STRUCTURE OF CASI2/SI INTERFACES (1991) (11)
Comment on "Heterojunction valence-band-discontinuity dependence on face orientation (1988) (11)
Theory of hydrogen in GaN (1999) (11)
Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies (2017) (10)
Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2021) (10)
Defect tolerance in halide perovskites: A first-principles perspective (2022) (10)
Vibrational signatures of OTe and OTe–VCd in CdTe: A first-principles study (2010) (10)
Chapter 4 Hydrogen in III-V Nitrides (1999) (10)
Carbon-nitrogen molecules in GaAs and GaP (2008) (10)
Hydrogen-related defects in sodium alanate (2007) (10)
Effect of Si doping on the strain and defect structure of GaN thin films (1999) (10)
Radiative capture rates at deep defects from electronic structure calculations (2020) (10)
Defects in Germanium (2015) (9)
Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)] (2019) (9)
Point-defect-mediated dehydrogenation of AlH3 (2010) (9)
Chapter One - Theory and Modeling of Oxide Semiconductors (2013) (9)
Hydrogen passivation of impurities in Al(2)O(3). (2014) (9)
Vibrational and vibronic structure of isolated point defects: The nitrogen-vacancy center in diamond (2020) (9)
Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)] (2016) (9)
Impact of nitrogen and carbon on defect equilibrium in ZrO 2 (2016) (9)
Carrier-induced absorption as a mechanism for electrochromism in tungsten trioxide (2018) (9)
Design and performance of asymmetric waveguide nitride laser diodes (2000) (9)
COMMENT ON: REDUCTION OF HOT ELECTRON DEGRADATION IN METAL OXIDE SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING BY LYDING ET AL. (1996) (8)
Hydrogen-Induced Degradation of NaMnO2 (2019) (8)
Impact of electric-field-dependent dielectric constants on two-dimensional electron gases in complex oxides (2015) (8)
Band alignments and polarization properties of the Zn-IV-nitrides (2020) (8)
Stability and mobility of native point defects in AlH3 (2011) (8)
First-principles study of antisite defects in perovskite stannates (2019) (8)
Giant polarization charge density at lattice-matched GaN/ScN interfaces (2019) (8)
TurningSrTiO3into a Mott insulator (2014) (8)
Point-defect kinetics in α - and γ -MgH 2 (2016) (8)
Phase Stability and Electronic Structure of GaAs 1– x N x Alloys (1995) (8)
Piezoelectric effect and polarization switching in Al1−xScxN (2021) (8)
Theory of hydrogen interactions with amorphous silicon (1999) (7)
Chapter 16 Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors (1991) (7)
Solubilities, defect reactions and doping limits in ZnSe (1992) (7)
Defects and doping in GaN (1997) (7)
Doping of Aigan Alloys (1998) (7)
Electrical compensation mechanism in fluorine-doped SnO2 (2017) (7)
Physics of defects and hydrogen in dilute nitrides (2004) (7)
Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$ (2015) (7)
Native Point Defects and Doping in ZnO (2011) (7)
Hydrogen Interactions With Semiconductors And Oxides (2003) (7)
Atomic Hydrogen in GaN (1995) (7)
Theory of defects, impurities, and doping in ZnSe (1992) (7)
Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics. (2018) (7)
Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces (2010) (7)
Thermodynamics of boron incorporation in BGaN (2021) (7)
Theory of hydrogen-related levels in semiconductors and oxides (2005) (7)
Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties (2022) (7)
Band offsets at interfaces between HgTe, CdTe, and InSb (1987) (6)
Erratum: Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory [Phys. Rev. B 80, 184110 (2009)] (2010) (6)
Theory of Hydrogen in Semiconductors (1998) (6)
Hydrogen states in silicon (1998) (6)
Deep‐Level Defects and Impurities in InGaN Alloys (2020) (6)
First-principles investigations of F and Cl impurities in NaAlH4 (2009) (6)
Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors (2016) (6)
Impact of dangling bonds on properties of h-BN (2021) (6)
The role of native defects in the transport of charge and mass and the decomposition of Li4BN3H10. (2014) (6)
Electronic structure and magneto-optical properties of silicon-nitrogen-vacancy complexes in diamond (2020) (6)
First‐principles theory of acceptors in nitride semiconductors (Phys. Status Solidi B 5/2015) (2015) (6)
Energy Conversion: Solid‐State Lighting (2013) (6)
Effects of La 5 d and 4 f states on the electronic and optical properties of LaAlO 3 (2016) (6)
Surprising stability of neutral interstitial hydrogen in diamond and cubic BN (2016) (6)
Boron dangling bonds in a monolayer of hexagonal boron nitride (2021) (6)
Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel (2015) (6)
Hydrogen in oxides and nitrides: unexpected physics and impact on devices (2010) (5)
Defects and Doping in III-V Nitrides (1997) (5)
Prospects for high carrier mobility in the cubic germanates (2020) (5)
Anomalous Auger Recombination in PbSe. (2020) (5)
LiH as a Li + and H − ion provider (2013) (5)
Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors (1996) (5)
Native Defect Compensation in Wide-Band-Gap Semiconductors (1992) (5)
Band alignments between SmTiO3, GdTiO3, and SrTiO3 (2016) (5)
Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ (2021) (5)
Fully ab initio supercell corrections for charged defects (2009) (5)
Band alignment at band‐insulator/Mott‐insulator interfaces (2014) (5)
Hydride Conductivity in Nitride Hydrides (2021) (5)
Phonon- and charged-impurity-assisted indirect free-carrier absorption in Ga2O3 (2019) (5)
The ternary system Au–Cr–Sn and the crystal structure of Au1.15Cr2Sn8.85 (2000) (4)
Formation and migration of native defects in NaAlH$_4$ (2009) (4)
Effects of N on the electronic structures of H defects in III–V semiconductors (2004) (4)
Adsorption and Diffusion of Aluminum on β-Ga2O3(010) Surfaces. (2021) (4)
Conductivity and transparency of TiO2 from first principles (2013) (4)
Coherent Control of a Nuclear Spin via Interactions with a Rare-Earth Ion in the Solid State (2022) (4)
Hidden role of Bi incorporation in nonradiative recombination in methylammonium lead iodide (2020) (4)
Materials and device simulations for silicon qubit design and optimization (2021) (4)
Multilayer transition-metal dichalcogenide channel Thin-Film Transistors (2012) (4)
Tight-Binding Initialization for Generating High-Quality Initial Wave Functions: Application to Defects and Impurities in GaN (1995) (4)
Theory of Hydrogen Reactions in Silicon (1987) (4)
Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (4)
Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs (2012) (4)
Front Cover (Phys. Status Solidi A 5/2010) (2010) (4)
Optimizing n -type doping of ZnGeN2 and ZnSiN2 (2019) (4)
Nanomembrane β-Ga2O3 high-voltage field effect transistors (2013) (3)
Impact of carbon and nitrogen on gate dielectrics in metal-oxide-semiconductor devices (2013) (3)
Metal versus insulator behavior in ultrathinSrTiO3-based heterostructures (2016) (3)
Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials (2009) (3)
Shedding light on doping of gallium nitride (2012) (3)
Dehydrogenation of AlH3 via the Vacancy Clustering Mechanism (2012) (3)
Summary Abstract: Theoretical investigations of fluorine–silicon systems (1988) (3)
Role of defects and impurities in doping of GaN (1996) (3)
Theory of hydrogen-related levels in semiconductors and oxides (2005) (3)
Structural and electronic properties of SrZrO3 and Sr(Ti,Zr) O3 alloys (2015) (3)
Prospects for n-type conductivity in cubic boron nitride (2021) (3)
Incorporation of Si and Sn donors in β-Ga2O3 through surface reconstructions (2021) (3)
Atomic and electronic structure of Si-Ge superlattices. (1989) (3)
Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon (1991) (3)
Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates (2009) (3)
Hybrid functional calculations of DX centers in AlN, GaN and AlGaN (2011) (3)
Chapter 6 - Hydrogen Interactions with Polycrystalline and Amorphous Silicon—Theory (1999) (3)
Polarization properties at rocksalt/wurtzite oxide interfaces (2020) (3)
Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy (2009) (3)
Role of Ga and In adatoms in the epitaxial growth of β−Ga2O3 (2020) (3)
Erratum: Native point defects and impurities in hexagonal boron nitride [Phys. Rev. B 97 , 214104 (2018)] (2020) (3)
Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride (2022) (3)
Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO3/SrTiO3 Superlatticefroni Soft- and Hard-X-ray Standing-Wave Angle-Resolved Photoemission (2015) (3)
Effects of biaxial stress and layer thickness on octahedral tilts in LaNiO3 (2015) (2)
Hydrogen interactions with crystalline, amorphous, polycrystalline, and porous silicon (2008) (2)
Theoretical Study of Native Point Defects in Aln and InN (1997) (2)
Theory of Native Point Defects and Impurities in InN (2009) (2)
Defects and Impurities in Semiconductors (2005) (2)
Hole Trapping at Acceptor Impurities and Alloying Elements in AlN (2021) (2)
Chapter 2 - Isolated Monatomic Hydrogen in Silicon (1999) (2)
Doping of Al x Ga 1 x N alloys (1999) (2)
First-principles study of electron-phonon interactions and transport in anatase TiO2 (2019) (2)
Ab initio study of hydrogenic effective mass impurities in Si nanowires (2017) (2)
Impact of point defects on electrochromism in WO3 (2018) (2)
Migration of Ga vacancies and interstitials in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:m (2023) (2)
Small polarons and their interaction with donor centers in Titania (2013) (1)
Reconstructions and adsorbates on polar and nonpolar GaN surfaces (2005) (1)
Dopants and defects in GaN (1995) (1)
First-principles calculations of optical transitions at native defects and impurities in ZnO (2018) (1)
sComment on ``Surface silicon-deuterium bond energy from gas-phase equilibration'' (1997) (1)
Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates (2008) (1)
Defect Chemistry and Hydrogen Transport in La/Sr-Based Oxyhydrides (2021) (1)
Vibrational Spectroscopy of GaN:Mg Under Pressure (2001) (1)
8 Energy Conversion : Solid-State Lighting (2013) (1)
FIRST-PRINCIPLES CALCULATIONS OF LIGHT EMISSION FROM SILICON-BASED MATERIALS (1994) (1)
Polarons Get the Full Treatment (2019) (1)
Doping of gallium oxide and aluminum gallium oxide alloys (2021) (1)
First-Principles Investigations of Hydrogen and Fluorine on Silicon Surfaces (1992) (1)
The Ternary System Au—Mn—Sb and the AuMnSn1‐xSbx Phase. (2003) (1)
New Model for “Stretched Exponential” Relaxation (1996) (1)
Stability, diffusion, and complex formation of beryllium in wurtzite GaN (2000) (1)
Optical behavior of native defects in ZnO (2013) (1)
Yellow luminescence in GaN (1999) (1)
Inflection points in the conduction-band structure of BaSnO3 (2020) (1)
Understanding carbon contamination in the proton-conducting zirconates and cerates. (2021) (1)
Surprising stability of polar (001) surfaces of the Mott insulator GdTiO3 (2021) (1)
Structural, electronic, and polarization properties of YN and LaN (2021) (1)
Effect of transition-metal additives on hydrogen desorption kinetics of MgH 2 (2013) (1)
Computational studies of conductivity in wide-band-gap semiconductors and oxides (2008) (1)
Defects, doping, and interfaces in III-V nitrides (1998) (1)
Native defects, impurities, and doping in GaN and related compounds: general remarks (1999) (1)
Role of carbon and hydrogen in limiting <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math> -type doping of monoclinic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub>< (2022) (1)
Defects, doping, and interfaces in III-V nitrides (1998) (1)
First-principles study of transport in WO3 (2020) (1)
Effects on stoichiometry on point defects and impurities in gallium nitride (2002) (1)
Understanding the Oxygen Vacancy in Tungsten Trioxide (2015) (1)
Native point defects in GaN and related compounds (1999) (0)
Self-Compensation and Doping Problems in ZnSe (1992) (0)
Hybrid functional calculations for defects in TiO$_2$ (2011) (0)
Structural and electronic properties of Sr(Zr,Ti)O$_3$ alloys for use in oxide heterostructures (2016) (0)
First-principles modeling of gallium-oxide and related semiconductors (Conference Presentation) (2018) (0)
First-principles theory of radiative and nonradiative carrier capture rates at defects in semiconductors (2014) (0)
Auger recombination in InAs: Role of spin-orbit coupling and phonons (2016) (0)
Point Defects in Al$_2$O$_3$ and their impact on novel CMOS performance (2010) (0)
Electronic structure and stability of LaAlO$_{3}$ surfaces using first-principles calculations (2014) (0)
Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials (2000) (0)
(Invited) First-Principles Understanding of Deep-Level Defects and Impurities in GaN and Nitride Alloys (2020) (0)
Role of phonon-assisted processes in Auger recombination in InAs (2015) (0)
Hybrid Functional Calculations of Acceptor Doping in Protonic Conductor SrZrO$_3$ (2015) (0)
Erratum: “Giant polarization charge density at lattice-matched GaN/ScN interfaces” [Appl. Phys. Lett. 115, 232103 (2019)] (2021) (0)
Impact of phonons and spin-orbit coupling on Auger recombination in InAs (2019) (0)
Hybrid functional calculations for native defects and dangling bonds in $\alpha$-Al$_2$O$_3$ (2012) (0)
Abstract Submitted for the MAR09 Meeting of The American Physical Society Hydrogen-related defects and the role of metal additives in com- (2012) (0)
Origins of transparent conductivity in SnO$_{2}$ (2007) (0)
Stability and electronic structure of GdTiO$_{\mathrm{3}}$ surfaces (2017) (0)
The nature of Group-V acceptor impurities in SnO$_{2}$ (2009) (0)
Strain effects on the electron effective mass in SrTiO$_3$ (2012) (0)
The impact of small polarons on the properties of rare-earth titanates (2015) (0)
Novel configuration of MgH complexes in GaN (2001) (0)
Back Matter for Volume 772 (2005) (0)
Phase Transformations upon Doping in Tungsten Trioxide (2016) (0)
Doping and defects in AlN and InN (2005) (0)
Impact of defects on efficiency of nitride devices (2016) (0)
Unique stability of neutral interstitial hydrogen in cubic BN and diamond (2016) (0)
Atomic scale microscopy of point defects and their complexes in beta-Ga2O3 (Conference Presentation) (2020) (0)
Abstract Submitted for the MAR10 Meeting of The American Physical Society A pathway to p-type wide-band-gap semiconductors1 ANDERSON JANOTTI, (2012) (0)
First-principles study of transport in WO 3 (2020) (0)
Carbon impurities in oxide dielectrics (2015) (0)
Comparing deep level transient spectroscopy with first-principles calculations (2017) (0)
Effects of strain on effective masses in GaN and AlN (2011) (0)
The Effect of Biaxial Strain and Layer Thickness on Octahedral Rotation in LaNiO$_3$ (2014) (0)
Auger recombination in light-emitting materials (2014) (0)
Atomic and electronic structure of AlN polar surfaces (2009) (0)
Band alignments at oxide interfaces and consequences for devices (2014) (0)
Defects and transport in oxide heterostructures (2019) (0)
First-principles calculations for Er impurities in Si (2012) (0)
Band alignments at the interface of complex oxides (2013) (0)
Oxygen in GaN. (1997) (0)
The effect of hydrogen-nitrogen interaction on electronic properties of GaAsN alloy (2002) (0)
Atomic Structure of CaSi 2 /Si Interfaces (1989) (0)
Zincblende GaN (001) surfaces: Ga-stabilized structures and metallic bonding (1997) (0)
Corrigendum: “Band alignments and polarization properties of BN polymorphs” [Appl. Phys. Express 7 031001 (2014)] (2019) (0)
First-principles lineshapes of defect luminescence bands (2012) (0)
Complex oxide interfaces (2013) (0)
Novel conguration of Mg-H complexes in GaN (2001) (0)
Conditions for T2 resistivity from electron-electron scattering (2017) (0)
Diffusion of Sn donors in β-Ga2O3 (2023) (0)
Nanosession: Advanced Spectroscopy and Scattering (2013) (0)
Hydrogen and acceptor compensation in GaN (1999) (0)
Microscopic origin of dissipative two-level systems in Al$_2$O$_3$ (2014) (0)
Enhanced and Retarded Diffusion of Shallow Impurities in Silicon (1988) (0)
Sources of Shockley-Read-Hall recombination in III-nitride light emitters (2016) (0)
First-principles studies of radiative and nonradiative recombination in halide perovskites (Conference Presentation) (2020) (0)
Charged defects in the supercell approach (2010) (0)
First-principles study of point defects in $\kappa $-Al$_{2}$O$_{3}$ (2009) (0)
PHYSICAL REVIEW B 101 , 045116 ( 2020 ) First-principles study of transport in WO (2020) (0)
First-principles studies of diffusion in gallium oxide (2022) (0)
Atomicandelectronicstructureofhydrogen-relatedcentersinhydrogen storagematerials (2008) (0)
Evolution of the electronic structure of SrTiO$_3$/GdTiO$_3$ heterostructures with layer thickness (2014) (0)
Abstract Submitted for the MAR15 Meeting of The American Physical Society Polarons in thin Ga2O3 layers (2015) (0)
Microscopy and Dichroism of Actinides and Rare Earths Moderator : (2014) (0)
First-principles study of quantum defect candidates in beryllium oxide (2022) (0)
Nitrogen-doped TiO$_2$ for visible light photocatalysis (2010) (0)
Hydrogen-related defects and the role of metal additives in complex hydrides (2009) (0)
Theoretical study of band offsets at semiconductor interfaces (1988) (0)
Thickness dependent metal-insulator transition in GdTiO$_{3}$/SrTiO$_{3}$ superlattices (2015) (0)
The Ternary System Au—Cr—Sn and the Crystal Structure of Au1.15Cr2Sn8.85. (2000) (0)
Substitutional hydrogen as a cause of the unintentional n-type conductivity in ZnO. (2007) (0)
Effects of strain on the band structure of wurtzite group-III nitrides (2014) (0)
Point Defects and Impurities in III-Nitride Bulk and Thin Film Heterostructures (2014) (0)
Computational Studies of Hydrogen Interactions with Storage Materials (2012) (0)
Electronic properties of BiI3 using hybrid functionals (2015) (0)
Group III-A Acceptor-Hydrogen interactions in SnO$_{2}$ (2008) (0)
Strain effect in group-III nitride semiconductors and their alloys (2009) (0)
A Frontal Attack on Limiting Defects in Nitrides: Theory and Computations (2002) (0)
First-principles study of transport in SrTiO3 (2015) (0)
Electronic properties of few-layer MoS2 under an external electrical field (2014) (0)
Defect Formation Energies without the Band-Gap Problem: Combining DFT and \textit{GW} for the Silicon Self-Interstitial (2008) (0)
Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces (2021) (0)
Fully \textit{ab initio} supercell corrections for charged defects (2009) (0)
Effect of transition-metal additives on dehydrogenation kinetics of MgH$_2$ (2013) (0)
Exploring the GW Ground State-the Self-Consistent GW Approach Applied to Molecules (2014) (0)
First-Principles determination of deformation potentials and band parameters in group-II oxide semiconductors (2010) (0)
ATOMIC STRUCTURE OF CaSidSi INTERFACES (1990) (0)
First-principles calculation of LO phonon scattering in BaSnO$_3$ (2016) (0)
Oxidation of nitride surfaces and its effect on device performance (2010) (0)
Role of native defects in the Li amide/Li imide hydrogen storage reaction (2010) (0)
Controlling the density of electrons in the 2DEG at complex oxide interfaces (2013) (0)
Defect Creation and Annihilation in GaN and ZnO (2009) (0)
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors (2004) (0)
Front Cover: Advances in electronic structure methods for defects and impurities in solids (Phys. Status Solidi B 1/2011) (2011) (0)
Protons and muons in materials science. Edited by E. A. Davis and S. F. J. Cox, Taylor & Francis, London 1996, x, 363 pp., hardcover, £65.00, ISBN 0–7484–0478–3 (1997) (0)
Role of native defects and related complexes in absorption and luminescence of AlN (2012) (0)
Electronic Structure and Hyperfine Parameters for Hydrogen and Muonium in Silicon (1989) (0)
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$ (2022) (0)
Role of hydrogen in gallium oxide (Conference Presentation) (2023) (0)
Comparative analysis of the hydrogen-vacancy interaction in Mg and Al based on density functional theory (2009) (0)
Theoretical study of Si in ZnO (2009) (0)
First-Principles Investigations of Acceptors in ZnSe (1992) (0)
Deep acceptors in Ga 2 O 3 (2019) (0)
Fundamental Science of Energy 010 " Fundamental studies of diffusion and reactions in hydrogen storage materials " (2008) (0)
Abstract Submitted for the MAR16 Meeting of The American Physical Society Phase Transformations upon Doping in Tungsten Trioxide1 WEN- (2015) (0)
Unusual Formation of Point Defects and Their Complexes in Ultra-wide Band Gap Beta-Ga2O3 (2020) (0)
O 3 alloys for transparent electronics (2015) (0)
Stability and electronic structure of GdTiO 3 surfaces (2017) (0)
Theory of copper impurities in ZnO (2017) (0)
Hybrid functional calculations for the electronic properties of LaAlO$_3$ (2014) (0)
Loss mechanisms in nitrides (2012) (0)
Oxides -- a challenge for (theoretical) spectroscopy (2011) (0)
Vacancy-assisted migration of group-III impurities in ZnO (2011) (0)
Hydrogen diffusion and tunneling in KTaO$_{3}$ from first principles (2012) (0)
Electron-phonon interactions in transport properties of WO$_{3}$ (2017) (0)
Physics of Semiconductors (2005) (0)
Front Matter for Volume 772 (2005) (0)
Role of nitrogen vacancies and related complexes in compensation and luminescence of Mg-doped GaN (2011) (0)
Defects as qubits in SiC (2012) (0)
Understanding Carbon Contamination in Proton Conducting Oxides (2021) (0)
Effect of native point defects on nitride materials and devices (1999) (0)
2011 8 : 00 AM-11 : 00 AM — Session A 12 GERA DMP : Focus Session : Electricity-to-Light Conversion : Solid State Lighting (2011) (0)
First principles study on InP (001)-(2 × 4) surface oxidation (2019) (0)
Role of point defects and additives in kinetics of hydrogen storage materials (2010) (0)
ResearchNitride Semiconductor Surface Structures , Surfactants and Diffusion at Cubic and Wurtzite (1999) (0)
Accurate treatment of spontaneous polarization in III-nitrides (2015) (0)
Mott behavior of ultrathin epitaxial LaNiO3 films and interfaces via hard x-ray and standing-wave excited photoemission (2012) (0)
Defects as qubits in 3C and 4H polymorphs of SiC (2013) (0)
New insights in doping of III-nitrides and their alloys (1999) (0)
for the MAR09 Meeting of The American Physical Society (2008) (0)
Doping-limiting mechanisms in GaN. (1996) (0)
First-principles studies of defects, doping, and diffusion in gallium oxide (Conference Presentation) (2020) (0)
Controlling the conductivity of wide-band-gap semiconductors (2001) (0)
Surface Energies and Cracking in GaN (2012) (0)
The divacancy in SiC: A new solid-state qubit (2012) (0)
Publisher's Note: Defects in AlN as candidates for solid-state qubits [Phys. Rev. B 93, 161201(R) (2016)] (2018) (0)
Identifying microscopic mechanisms for hole traps in nitride heterostructures (2014) (0)
Absolute surface energies, fracture toughness, and cracking in nitrides (2014) (0)
Theory of Defects in Wide-Band-Gap Semiconductors (1995) (0)
E ! ect of Si doping on the strain and defect structure of GaN thin " lms (1999) (0)
Hydrogen as a shallow center in semiconductors and oxides (2003) (0)
Abstract Submitted for the MAR08 Meeting of The American Physical Society Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial (2021) (0)
Impact of defects on efficiency of light emitters (Conference Presentation) (2018) (0)
Direct determination of the built-in polarization field in InGaN/GaN quantum wells (2002) (0)
Title Limitations to the room temperature mobility of two-and three-dimensional electron liquids in SrTiO 3 Permalink (2015) (0)
The interaction of hydrogen donors with compensating acceptors in semiconducting oxides (2012) (0)
4 . 5 SiGe heterojunctions and band offsets (2007) (0)
Iodine Vacancies do not Cause Nonradiative Recombination in Halide Perovskites (2023) (0)
New insights in the role of native defects in ZnO (2005) (0)
Emergent Phenomena at Mott Interfaces (2016) (0)
Recent and forthcoming publications in pss: Phys. Status Solidi RRL 1–2/2013 (2013) (0)
Fundamental Studies of Diffusion and Reactions in Hydrogen Storage Materials (2008) (0)

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