Colin Humphreys

Q: What Schools Are Affiliated With Colin Humphreys

Colin Humphreys is affiliated with the following schools: University of Oxford, Imperial College London, Queen Mary University of London, University of Manchester, University of Cambridge

Colin Humphreys's AcademicInfluence.com Rankings

Colin Humphreys

Physics

#1770

World Rank

#2694

Historical Rank

physics Degrees

Download Badge

Physics

Why Is Colin Humphreys Influential?

(Suggest an Edit or Addition)

According to Wikipedia, Sir Colin John Humphreys, is a British physicist. He is the Professor of Materials Science at Queen Mary University of London. He is the former Goldsmiths' Professor of Materials Science at the University of Cambridge and the Professor of Experimental Physics at the Royal Institution in London. He served as President of the Institute of Materials, Minerals and Mining in 2002 and 2003. His research interests include "all aspects of electron microscopy and analysis, semiconductors , ultra-high temperature aerospace materials and superconductors." Humphreys also "studies the Bible when not pursuing his day-job as a materials scientist."

(See a Problem?)

Colin Humphreys's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study (1998) (7837)
Solid-State Lighting (2008) (266)
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope (2003) (260)
Prospects of III-nitride optoelectronics grown on Si (2013) (253)
Machine Learning Predicts Laboratory Earthquakes (2017) (232)
The scattering of fast electrons by crystals (1979) (214)
Absorption parameters in electron diffraction theory (1968) (199)
Critical thickness calculations for InGaN/GaN (2007) (197)
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures (2005) (196)
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms (2002) (168)
Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering (2007) (167)
Carrier localization mechanisms in InxGa1?xN/GaN quantum wells (2010) (152)
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy (2001) (143)
Dislocation nucleation near the critical thickness in GeSi/Si strained layers (1989) (137)
Chemical mapping and formation of V-defects in InGaN multiple quantum wells (2000) (137)
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal (2003) (134)
Dopant profiling with the scanning electron microscope—A study of Si (2002) (127)
Understanding x-ray diffraction of nonpolar gallium nitride films (2009) (121)
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons (1972) (118)
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers (2007) (115)
On the origin of threading dislocations in GaN films (2009) (112)
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 (2006) (111)
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm (2003) (111)
Atom probe tomography today (2007) (109)
Growth modes in heteroepitaxy of InGaN on GaN (2005) (107)
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering (2003) (106)
Improvements in a-plane GaN crystal quality by a two-step growth process (2008) (104)
Equilibrium critical thickness for misfit dislocations in III-nitrides (2008) (104)
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides (2013) (103)
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures (2012) (99)
Does In form In-rich clusters in InGaN quantum wells? (2007) (96)
Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures (2008) (94)
Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation (1987) (91)
Nanometer scale electron beam lithography in inorganic materials (1984) (91)
Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates (2014) (89)
Growth and characterisation of GaN with reduced dislocation density (2004) (87)
Microstructural origins of localization in InGaN quantum wells (2010) (87)
The atomic structure of the NiSi2-(001)Si interface (1984) (86)
Variation of dislocation morphology with strain in Ge x Si 1 - x epilayers on (100)Si (1990) (86)
In-plane imperfections in GaN studied by x-ray diffraction (2005) (84)
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction (2007) (84)
Elastic constants and critical thicknesses of ScGaN and ScAlN (2013) (81)
The critical voltage effect in high voltage electron microscopy (1972) (77)
Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures (2007) (77)
Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) (1999) (76)
Electron beam writing on a 20-Å scale in metal β-aluminas (1983) (71)
Dislocation reduction in gallium nitride films using scandium nitride interlayers (2007) (71)
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures (2012) (69)
The distribution of intensity in electron diffraction patterns due to phonon scattering (1977) (69)
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells (2001) (67)
Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy (1997) (66)
Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot (2007) (65)
Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy (2002) (62)
Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates (2013) (60)
Inelastic scattering of fast electrons by crystals (1969) (60)
Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structures (2007) (59)
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition (2001) (59)
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells (2016) (58)
Structure and chemistry of the Si(111)/AlN interface (2012) (58)
Temporal variation in photoluminescence from single InGaN quantum dots (2004) (58)
Misfit dislocations in In‐rich InGaN/GaN quantum well structures (2006) (57)
Measurement of low-order structure factors for silicon from zone-axis CBED patterns (1995) (57)
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures (2003) (57)
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire (2009) (57)
Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. (2007) (55)
The effects of Si doping on dislocation movement and tensile stress in GaN films (2011) (55)
Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. (2007) (54)
Novel fabrication method for nanometer‐scale silicon dots and wires (1993) (54)
Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field (2005) (54)
Segregation of In to dislocations in InGaN. (2015) (53)
Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. (2015) (52)
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE (2009) (52)
The effect of oxygen incorporation in sputtered scandium nitride films (2008) (52)
Nanometre hole formation in MgO using electron beams (1990) (51)
Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures (1998) (51)
Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers (2009) (51)
High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging (2006) (51)
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions (2015) (51)
Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy (2010) (51)
Some electron diffraction contrast effects at planar defects in crystals (1967) (51)
Time-resolved dynamics in single InGaN quantum dots (2003) (50)
Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells (2011) (50)
Ultra-high temperature intermetallics for the third millennium (2000) (50)
Maximizing the penetration in high voltage electron microscopy (1971) (50)
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes (2013) (50)
Mg doping affects dislocation core structures in GaN. (2013) (49)
Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method (2009) (49)
Domain boundaries in epitaxial wurtzite GaN (1997) (49)
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ?green gap? problem (2014) (49)
TEM specimen preparation techniques (2010) (48)
New phases in the superconducting Y: Ba:Cu:O system (1987) (48)
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy (2006) (47)
Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes (2009) (46)
Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory (2015) (46)
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer (2016) (44)
Dislocation movement in GaN films (2010) (44)
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon (2006) (43)
Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates (2011) (43)
The Spatial Distribution of Threading Dislocations in Gallium Nitride Films (2009) (43)
Convergent-beam imaging−a transmission electron microscopy technique for investigating small localized distortions in crystals (1988) (42)
A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations (2011) (42)
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers (2009) (41)
Carrier localization in the vicinity of dislocations in InGaN (2017) (41)
Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image (2004) (41)
A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy (1999) (40)
Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] (2003) (40)
Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer (2007) (40)
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. (2011) (39)
X‐ray topography of the coherency breakdown in GexSi1−x/Si(100) (1988) (39)
Fundamental concepts of stem imaging (1981) (39)
Radiation damage of polymers in the million volt electron microscope (1970) (38)
Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning (2016) (38)
Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors (2002) (38)
A multiple scattering transport theory for electron (1980) (37)
Degradation of GaN-based quantum well light-emitting diodes (2008) (37)
Two-photon absorption from single InGaN/GaN quantum dots (2006) (36)
Electrons seen in orbit (1999) (36)
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs (2012) (35)
Microstructure of epitaxial scandium nitride films grown on silicon. (2006) (35)
Electronic and optical properties of nonpolar a-plane GaN quantum wells (2010) (35)
Characterization of InGaN quantum wells with gross fluctuations in width (2007) (35)
Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates (2008) (34)
Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector (2003) (34)
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues (2014) (34)
Compositional inhomogeneity of a high-efficiency InxGa1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe (2008) (33)
High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance (2013) (33)
The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction (1980) (33)
X-ray diffraction analysis of cubic zincblende III-nitrides (2017) (33)
Material optimisation for AlGaN/GaN HFET applications (2001) (33)
Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN (2004) (32)
Growth of epitaxial thin films of scandium nitride on 100-oriented silicon (2008) (32)
The effect of dislocations on the efficiency of InGaN/GaN solar cells (2013) (32)
Structure and strain relaxation effects of defects in InxGa1−xN epilayers (2014) (32)
CBED and CBIM from semiconductors and superconductors (1988) (32)
Effects of electron-beam exposure on a ruthenium nanocluster polymer (2001) (32)
Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure (2000) (32)
Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys (2011) (31)
The dissociation of the [a + c] dislocation in GaN (2013) (31)
Silica‐Supported Fe ? Pd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity (1988) (31)
Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors (1987) (30)
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping (2015) (29)
Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction (1987) (29)
Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI (2005) (29)
Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy (2006) (29)
Kikuchi patterns in a high voltage electron microscope (1970) (28)
Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings (2008) (28)
Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium (1993) (28)
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells (2013) (28)
Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers (2010) (28)
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy (1995) (28)
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges (2013) (28)
Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid Solutions (1998) (27)
The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy (2004) (27)
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop (2013) (27)
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy (2003) (27)
Growth of low dislocation density GaN using transition metal nitride masking layers (2007) (27)
Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN (2013) (27)
Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire (2010) (27)
Detailed interpretation of electron transport in n-GaN (2003) (27)
Electron‐beam induced crystallization transition in self‐developing amorphous AlF3 resists (1996) (26)
Imaging dislocation cores – the way forward (2006) (26)
Additional image peaks in the high resolution imaging of dislocations (1977) (26)
SOLIDIFICATION CHARACTERISTICS OF ADVANCED NICKEL-BASE SINGLE CRYSTAL SUPERALLOYS (2004) (26)
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. (2017) (25)
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers (2018) (25)
The Symmetry of Three-Beam Scattering Equations: Inversion of Three-Beam Diffraction Patterns from Centrosymmetric Crystals (1996) (25)
InGaN quantum dots grown by MOVPE via a droplet epitaxy route (2004) (25)
Interlayer methods for reducing the dislocation density in gallium nitride (2007) (25)
The optimum voltage in very high voltage electron microscopy (1972) (24)
The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers (1987) (24)
Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. (2017) (24)
Unintentional doping in GaN assessed by scanning capacitance microscopy (2008) (24)
Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods (2016) (24)
Dynamics of single InGaN quantum dots (2004) (24)
Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy (2009) (24)
Observation of thermally activated conduction at a GaN–sapphire interface (2001) (24)
The effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy (1999) (24)
Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. (2007) (24)
Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy (1997) (24)
The effect of wafer curvature on x-ray rocking curves from gallium nitride films (2008) (24)
Aspects of Bloch‐Wave Channeling in High‐Voltage Electron Microscopy (1970) (24)
The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. (2012) (24)
Anisotropic strain relaxation in a-plane GaN quantum dots (2007) (23)
Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride. (2014) (23)
Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells (2005) (23)
Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps (2013) (23)
Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN (2004) (23)
The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films (2009) (23)
The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells (2016) (22)
A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy (1974) (22)
3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite? (2019) (22)
Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source (2008) (22)
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes (2017) (22)
The origin and reduction of dislocations in Gallium Nitride (2008) (22)
Optical polarization anisotropy of a -plane GaN/AlGaN multiple quantum well structures grown on r -plane sapphire substrates (2009) (22)
Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer (2017) (22)
Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase (1995) (22)
Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth (2010) (21)
Dielectric response of wurtzite gallium nitride in the terahertz frequency range (2016) (21)
A high‐resolution electron microscopic study of defects in sodium β′″‐alumina (1983) (21)
Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride (2008) (21)
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method (2014) (21)
Exciton localization in InGaN/GaN single quantum well structures (2003) (21)
On the hierarchy of planar fault energies in TiAl (1995) (20)
Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope (2004) (20)
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures (2014) (20)
Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens (2006) (20)
Structural impact on the nanoscale optical properties of InGaN core-shell nanorods (2017) (20)
High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems (2008) (20)
Nanolithography using field emission and conventional thermionic electron sources (1989) (20)
High-resolution electron microscopy observation of a1/2(112) superdislocation in TiAl (1995) (20)
Dating the Crucifixion (1983) (20)
Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy (1997) (19)
Effects of KOH etching on the properties of Ga-polar n-GaN surfaces (2006) (19)
Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy (2010) (19)
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures (2015) (19)
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics (2016) (19)
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes (2004) (19)
Solid-State Lighting Based on Light Emitting Diode Technology (2016) (19)
Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy (2009) (19)
A TEM STUDY OF THE EFFECT OF PLATINUM GROUP METALS IN ADVANCED SINGLE CRYSTAL NICKEL-BASE SUPERALLOYS (2004) (18)
Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy (2009) (18)
What is red? On the chromaticity of orange-red InGaN/GaN based LEDs (2018) (18)
Optimizing GaN ( 112‾2 ) hetero‐epitaxial templates grown on ( 101‾0 ) sapphire (2016) (18)
Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant (2015) (18)
Tetragonal and monoclinic forms of GexSi1−x epitaxial layers (1989) (18)
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength (2010) (17)
Practical issues in carrier‐contrast imaging of GaN structures (2007) (17)
A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures (2015) (17)
Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy (1999) (17)
Growth and coalescence studies of (112‾2) oriented GaN on pre‐structured sapphire substrates using marker layers (2015) (17)
Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure (2011) (17)
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells (2014) (17)
Bloch wave notation in many‐beam electron diffraction theory (1971) (17)
Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures (2009) (17)
Electron energy‐loss near edge structure (ELNES) of InGaN quantum wells (2003) (16)
Effect of humidity on the interlayer interaction of bilayer graphene (2018) (16)
THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y1Ba2Cu3O9-y (1987) (16)
An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire (2014) (16)
Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists (2000) (16)
Properties of non-polar a-plane GaN/AlGaN quantum wells (2008) (16)
Photoluminescence studies of cubic GaN epilayers (2017) (16)
Dislocation-related trap levels in nitride-based light emitting diodes (2014) (16)
Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN (2009) (16)
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells (2016) (16)
High voltage electron microscopy (1973) (16)
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3 (1999) (16)
Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire (2009) (16)
Electrically driven single InGaN/GaN quantum dot emission (2008) (16)
Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE (2014) (15)
Resonant excitation photoluminescence studies of InGaN /GaN single quantum well structures (2006) (15)
Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire (2006) (15)
Low defect large area semi-polar (112) GaN grown on patterned (113) silicon (2014) (15)
Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers (2010) (15)
High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux (1998) (15)
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN (2018) (15)
Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs (2015) (15)
Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers (2008) (15)
All-GaN-Integrated Cascode Heterojunction Field Effect Transistors (2017) (15)
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode (2014) (15)
Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy. (2001) (15)
Growth, microstructure and morphology of epitaxial ScGaN films (2012) (15)
Dislocation core structures in Si-doped GaN (2015) (15)
Evolution and religion (1993) (14)
Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering (2012) (14)
Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: a theoretical study using the Wien2k and Telnes programs. (2008) (14)
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells (2013) (14)
Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs (1998) (14)
Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory (1999) (14)
Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. (2020) (14)
Low-cost high-efficiency GaN LED on large-area si substrate (2013) (14)
Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM (2004) (14)
Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions (2008) (13)
Development of semipolar (11-22) LEDs on GaN templates (2016) (13)
MICROTWIN NUCLEATION AND PROPAGATION IN HETEROEPITAXIAL II-VI COMPOUNDS ON(001)-ORIENTED GAAS SUBSTRATES (1995) (13)
High resolution dopant profiling in the SEM, image widths and surface band-bending (2008) (13)
Mechanical properties of graphene (2021) (13)
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures (2014) (13)
3D strain in 2D materials: Experimental test in unsupported monolayer graphene under pressure (2019) (13)
Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures (2013) (13)
Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary (2001) (13)
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films (2011) (13)
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy (2012) (13)
Properties of trench defects in InGaN/GaN quantum well structures (2013) (13)
High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm (2007) (13)
Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field (2008) (13)
Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V (2015) (12)
Stem Imaging of Crystals and Defects (1979) (12)
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (2008) (12)
Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices (2009) (12)
Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates (2013) (12)
Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction (2009) (12)
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth (2017) (12)
Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy (2001) (12)
GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor (2002) (12)
The origin of dislocations in multilayers (1991) (12)
Electric fields in AlGaN/GaN quantum well structures (2006) (12)
On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors (1990) (12)
Analysis of EELS near edge structures to study the bonding character in intermetallic alloys (1997) (12)
High quantum efficiency InGaN/GaN structures emitting at 540 nm (2006) (12)
Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes (2016) (12)
InGaN as a Substrate for AC Photoelectrochemical Imaging (2019) (12)
Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire (2008) (12)
A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers (2006) (12)
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates (1998) (12)
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers (2016) (12)
Famines and cataclysmic volcanism (1994) (11)
Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth (2017) (11)
Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot (2009) (11)
High voltage electron microscopy : proceedings of the third International Conference (1974) (11)
Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy (2007) (11)
Structure of the Al/Al2O3 interface (1985) (11)
Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes (2015) (11)
Dislocation core structures in (0001) InGaN (2016) (11)
Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model (2019) (11)
Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy (2014) (11)
The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells (2014) (11)
High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates (2012) (10)
Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique (2016) (10)
Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy (1994) (10)
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN (2001) (10)
Energy landscape and carrier wave-functions in InGaN/GaN quantum wells (2010) (10)
Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence (2016) (10)
Broadband Sensitization of 1.53 mu m Er[sup 3+] Luminescence in Erbium-Implanted Alumina (2004) (10)
Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures (2007) (10)
Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds (2013) (10)
Optical studies of non‐polar m‐plane ( 11¯00 ) InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN (2015) (10)
Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction (1994) (10)
Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy (2001) (10)
Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure (2017) (10)
Optical and structural properties of dislocations in InGaN (2019) (10)
Controlling crystal growth (1989) (9)
Investigation of the proximity effect in amorphous AlF3 electron-beam resists (1997) (9)
Automatized convergence of optoelectronic simulations using active machine learning (2017) (9)
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures (2014) (9)
Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors (2014) (9)
Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS (2010) (9)
Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire (2014) (9)
Boron segregation in a (Fe, V, B) TiAl based alloy (1993) (9)
Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment (2010) (9)
Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs (1995) (9)
Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence (2016) (9)
Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations (2007) (9)
Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold (2016) (9)
Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts (1997) (9)
Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals (2001) (9)
Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys (1998) (8)
Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. (2010) (8)
Energy filtered scanning electron microscopy: applications to characterisation of semiconductors (2010) (8)
Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials (1999) (8)
Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)] (2011) (8)
GaN/InGaN quantum wells grown in a close coupled showerhead reactor (2003) (8)
On the dissociation of prism plane superdislocations in Ti3Al (1995) (8)
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells (2016) (8)
Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm (2010) (8)
Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. (2010) (8)
Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy (2007) (8)
Dislocations at 120° order interfaces in TiAl (1996) (8)
The effects of annealing on non-polar ( 1 1 2̄ 0) a-plane GaN films (2010) (8)
Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal (2003) (8)
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures (2018) (8)
Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals (1986) (8)
Characterization of Ultrathin Doping Layers in Semiconductors (1997) (8)
TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs (1996) (8)
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN (2018) (8)
Solar eclipse of 1207 BC helps to date pharaohs (2017) (8)
Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)] (2007) (8)
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells (2016) (7)
Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements (2012) (7)
Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer (2010) (7)
DEFECT CONTRAST AND RESOLUTION IN HIGH VOLTAGE ELECTRON MICROSCOPY. (1972) (7)
Analytical electron microscopy of [Ni38Pt6(CO)48H]5? (1987) (7)
The Mystery of the Last Supper: Reconstructing the Final Days of Jesus (2011) (7)
Chemical mapping of InGaN MQWs (2001) (7)
Studies of efficiency droop in GaN based LEDs (2012) (7)
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method (2014) (7)
Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images (2009) (7)
CHANNELLING RADIATION IN ELECTRON MICROSCOPY. (1984) (7)
Geometric and electronic structure of a semiconductor superlattice (1985) (7)
Strain Relaxation in an AlGaN/GaN Quantum Well System (2008) (7)
Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope (2012) (7)
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities (2018) (7)
The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption (2013) (7)
Electron holography of an in‐situ biased GaN‐based LED (2012) (7)
Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire (2015) (7)
High temperature superconducting ceramics (1988) (7)
The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy (2000) (7)
SCM and SIMS investigations of unintentional doping in III-nitrides (2015) (7)
Investigation of the GaN-on-GaAs interface for vertical power device applications (2014) (7)
High resolution divergent-beam X-ray topography (1970) (7)
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells (2018) (6)
Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice (2010) (6)
Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system (2010) (6)
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (2021) (6)
The impact of growth parameters on trench defects in InGaN/GaN quantum wells (2014) (6)
Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016) (6)
The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy (1995) (6)
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN (2004) (6)
Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates (2016) (6)
The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion (1992) (6)
Scanning transmission electron beam induced conductivity investigation of a Si/Si1−xGex/Si heterostructure (1996) (6)
Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy (1998) (6)
Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy (2009) (6)
A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs (2008) (6)
Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs (2016) (6)
Carrier distributions in InGaN/GaN light‐emitting diodes (2015) (6)
Degradation of III‐nitride laser diodes grown by molecular beam epitaxy (2008) (6)
The Star of Bethlehem a Comet in 5-BC and the Date of the Birth of Christ (1991) (6)
Deep electronic states associated with a metastable hole trap in n-type GaN (2007) (6)
Materials challenges for devices based on single, self-assembled InGaN quantum dots (2007) (6)
Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering (2004) (6)
Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method (1996) (6)
Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubes (1994) (6)
Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001) (2017) (5)
Impact of stress in ICP‐CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs (2018) (5)
X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface (2017) (5)
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates (2011) (5)
RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. (1981) (5)
The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates (2011) (5)
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures (2016) (5)
Perspectives on Electronic and Optoelectronic Materials (2006) (5)
High resolution electron microscopy of silver β- and β″ -aluminas (1983) (5)
Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE (2004) (5)
Examination of the Al/Al2O3 interface by high-resolution electron microscopy (1985) (5)
Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers (2020) (5)
Lattice distortions in GaN on sapphire using the CBED-HOLZ technique. (2009) (5)
Electron Energy Loss Spectroscopy as a Tool to Probe the Electronic Structure in Intermetallic Alloys (1997) (5)
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs (2018) (5)
A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor (2015) (5)
Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO (1989) (5)
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates (2016) (5)
On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells (2012) (5)
Comparative study of (0001) and InGaN based light emitting diodes (2016) (5)
Dislocation Climb in c-Plane AlN Films (2011) (5)
Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN (2012) (5)
Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (2016) (5)
Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0) (2016) (5)
Gross well‐width fluctuations in InGaN quantum wells (2008) (5)
Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose (2008) (4)
Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells (2012) (4)
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength (2019) (4)
A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions (2006) (4)
Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals (2019) (4)
STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures (1986) (4)
Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing (2014) (4)
A theoretical study of temperature distributions during Czochralski crystal growth (1979) (4)
Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE (2006) (4)
Transmission electron microscopy investigations of II–VI/GaAs heterostructures (1994) (4)
Lattice distortions in GaN thin films on (0001) sapphire (2010) (4)
Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots (2004) (4)
Crytallography: Defects in reduced oxides (1984) (4)
Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope (2011) (4)
Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites (2020) (4)
Cavity Enhancement of Single Quantum Dot Emission in the Blue (2009) (4)
Subthreshold Mobility in AlGaN/GaN HEMTs (2016) (4)
Progress towards site-specific dopant profiling in the scanning electron microscope (2010) (4)
Energy filtered scanning electron microscopy: Applications to dopant contrast (2010) (4)
Three methods for the growth of InGaN nanostructures by MOVPE (2006) (3)
Origins of hillock defects on GaN templates grown on Si(111) (2016) (3)
Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells (2018) (3)
The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 (2008) (3)
Characterisation of defects in p-GaN by admittance spectroscopy (2012) (3)
n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon (2016) (3)
Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al (1997) (3)
High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl (1996) (3)
EELS Studies of B2-Type Transition Metal Aluminides: Experiment and Theory (1995) (3)
Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes (2016) (3)
The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key (2008) (3)
Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme (2020) (3)
Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults (2010) (3)
The scattering of fast electrons by crystals (1979) (3)
Structural features in GaN grown on a Ge(111) substrate (2008) (3)
Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates (2019) (3)
A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem (2010) (3)
High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN (2008) (3)
HANSIS software tool for the automated analysis of HOLZ lines. (2009) (3)
Climb of dislocations in GaAs by irradiation (1998) (3)
Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy (2006) (3)
Benefits of energy filtering for advanced convergent beam electron diffraction patterns (1994) (3)
Sensitisation of erbium luminescence in erbium-implanted alumina (2006) (3)
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates (2003) (3)
Observation of long-range compositional fluctuations in glasses: implications for atomic and electronic structure. (2008) (3)
Dynamical Aspects of Electron Diffraction (1977) (3)
Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures (2008) (3)
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE (1997) (3)
Interfacial structure and chemistry of GaN on Ge(111). (2013) (3)
Materials science and engineering in Britain (1989) (3)
Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source (2016) (3)
Integrated dual-color InGaN light-emitting diode array through transfer printing (2015) (3)
The science behind the Turin Shroud (1996) (2)
Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy (1997) (2)
Atom positions in the R-phase unit cell in TiNi shape memory alloy (1996) (2)
Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon (1999) (2)
Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts (2004) (2)
A dissociation mechanism for the [a+c] dislocation in GaN (2014) (2)
Microscopic, Electrical and Optical Studies on InGaN/GaN Quantum Wells Based LED Devices (2014) (2)
Research Data Supporting "Structural and optical properties of (11-22) InGaN quantum wells compared to (0001) and (11-20)" (2016) (2)
Non-linear excitation and correlation studies of single InGaN quantum dots (2009) (2)
The Star of Bethlehem, A Comet in 5 BC and the Date of Christ’s Birth (1992) (2)
Misfit dislocations in green-emitting InGaN/GaN quantum well structures (2005) (2)
Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron Microscopy (1999) (2)
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN (2010) (2)
Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate (2011) (2)
Atom Probe Tomography Studies of GaN-Based Semiconductor Materials (2009) (2)
The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials (2010) (2)
Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene (2020) (2)
Plasma Anodisation of Silicon for Advanced VLSI (1988) (2)
Characterising the degree of polarisation anisotropy in an a-plane GaN film (2010) (2)
Analysis of InGaN-GaN quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering (2003) (2)
Towards a better understanding of trench defects in InGaN/GaN quantum wells (2013) (2)
Difference in linear polarization of biaxially strained InxGa1-xN alloys on nonpolar a-plane and m-plane GaN (2015) (2)
Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM (2014) (2)
The Star of Bethlehem (2)
Low-cost high-efficiency GaN LEDs on 6-inch Si (2012) (2)
Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC (2016) (2)
Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope (1993) (2)
Structure and Climb of Faulted Dipoles in GaAs (1999) (2)
Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures (2014) (2)
HREM STUDIES OF THE (001) SURFACE OF YBA2CU4O8 (1995) (2)
Inversion domain nucleation in homoepitaxial GaN (1999) (2)
Effect of growth temperature and V / III-ratio on the surface morphology of MOVPE-grown cubic zincblende (2018) (2)
Characterisation of non-polar (11-20) gallium nitride using TEM techniques (2008) (2)
High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime (2014) (2)
Dislocation Behaviour in Ge x Si 1-x Epilayers on (001)Si (1989) (2)
Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography (2010) (2)
A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias (2019) (2)
Cutting of 20A holes and lines in metal-. beta. -aluminas (1983) (2)
Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors (1998) (2)
Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems (2007) (2)
Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks (2017) (2)
Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire (2011) (2)
Proceedings of the International Conference on High Voltage Electron Microscopy (3rd) Held at Oxford (England) in August 1973 (1974) (2)
The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI (1998) (2)
Characterization of p-GaN1−xAsx/n-GaN PN junction diodes (2016) (2)
Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018) (2)
Compositional modulations in GexSi1−x heteroepitaxial layers (1989) (2)
Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)] (2002) (2)
Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM (2018) (1)
High resolution Laplace Deep Level Transient Spectroscopy studies of shallow and deep levels in n-GaN (2008) (1)
Reduction of threading dislocation density using in-situ SiNx interlayers (2005) (1)
Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth (1998) (1)
SHAPING THE FUTURE OF MATERIALS SCIENCE (1998) (1)
Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells (2006) (1)
Dislocation Nucleation in GeSi/Si(100) Strained Epilayers (1988) (1)
The energy dependence of axial coherent bremsstrahlung at low accelerating voltages (1984) (1)
Applications, Environmental Impact and Microstructure of Light-Emitting Diodes* (2007) (1)
Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN/GaN Quantum Wells (2005) (1)
Assessment of semiconductor epitaxial growth by transmission electron microscopy (1995) (1)
Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0 (1989) (1)
High brightness near-ultraviolet resonant LEDs (2008) (1)
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes (2015) (1)
Structure and strain-relaxation effects of defects in In x Ga 1x N epilayers (2014) (1)
Defects in MBE and MOCVD-grown GaAs on Si (2020) (1)
A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan (1997) (1)
Progress towards quantitative dopant profiling in the SEM (2010) (1)
Electron-beam induced crystallization transition in self-developing amorphous AlF 3 resists (1996) (1)
Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structures (2009) (1)
Dataset for Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods (2016) (1)
Energy filtered imaging in a FEG-SEM for enhanced dopant contrast (2002) (1)
Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study (1986) (1)
Assessment of scanning spreading resistance microscopy for application to n‐type GaN (2008) (1)
A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures (2005) (1)
Capillary-bonding of thin LEDs onto non-native substrates by transfer-printing (2014) (1)
The interaction of electron beams with solids - Some new effects (1990) (1)
Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs (2006) (1)
3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials (2007) (1)
Convergent Beam Electron Diffraction (1999) (1)
Self-catalytic growth of gallium nitride nanoneedles under Garich conditions (2005) (1)
High voltage electron microscopy. Proceedings of the third international conference held at Oxford, England, August 27--30, 1973 (1974) (1)
Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells (2001) (1)
THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL (2000) (1)
Transfer printed multi-color integrated devices for visible light communication applications (2016) (1)
A new dissociation mode for dislocations in silicon (1978) (1)
An Hrem Investigation of a {1 2 1} L10 Boundary in Tial (1994) (1)
The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions (2007) (1)
Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors (2014) (1)
Science and the Miracles of Exodus (2005) (1)
The mean inner potential of GaN measured from nanowires using off-axis electron holography (2005) (1)
Comment on: Three-dimensional atom probe studies of an InxGa1- xN/GaN multiple quantum well structure : Assessment of possible indium clustering. Authors' reply (2007) (1)
Growth of Uncracked Al 0.80 Ga 0.20 N/GaN DBR on Si(111) (2004) (1)
Dataset for Investigation of InGaN facet-dependent non-polar growth rates and composition for core-shell LEDs (2016) (1)
Perspectives on Electronic and Photonic Materials (2017) (1)
The Mystery of the Last Supper: List of illustrations (2011) (1)
The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool (2017) (1)
Strains and Misfit Dislocations at Interfaces (1989) (1)
Comparative study of (0001) and [Formula: see text] InGaN based light emitting diodes (2016) (1)
Chemical mapping of InGaN/GaN LEDs (2018) (1)
Control of Point Defects in Semiconductors (1994) (1)
Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. (2016) (1)
TEM Investigation of Point Defect Interactions in II-VI Compounds (1995) (1)
Hrem Lattice Image Simulations of Circular Cross-Sectional Multishell Carbon Nanotubes (1994) (1)
The Mystery of the Last Supper: Notes (2011) (1)
The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures (2006) (1)
Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111) (2006) (1)
Modelling the closely-coupled cascode switching process (2016) (1)
Silica-Supported Fe-Pd Bimetallic Particles - Formation from Mixed-Metal Clusters and Catalytic Activity. (1988) (1)
Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN (2008) (1)
Disruption of the $sp^2$ bonding by the compression of the $\pi$-electronic orbitals of graphene at various stacking orders (2019) (1)
Terahertz Microstrip Single Patch Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC (2016) (1)
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF 3 (1999) (1)
Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth (2010) (1)
Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs (2016) (1)
State of British science (1991) (1)
Excitation energy dependence of the photoluminescence spectrum of an Inx Ga1-x N/GaN single quantum well structure (2007) (1)
Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots (2004) (1)
Quantitative Dopant Profiling in the SEM Including Surface States (2008) (1)
Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire (2012) (1)
Microwave dielectric properties of(Y/sub 2-x/R/sub x/)BaCuO/sub 5/ (R=rare-earth) solid solutions (1998) (1)
Electron Beam Induced Crystallisation in Iron (III) Fluoride (1995) (1)
Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures (2007) (0)
Structural and optical properties of (11$\bar 2$2) InGaN quantum wells compared to (0001) and (11$\bar 2$0) (2016) (0)
Growth and characterisation of InGaN/GaN and InGaN/InGaN MQWs emitting at 540 nm (2005) (0)
Transmission electron microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. ‐ISBN 3‐540‐50499‐0 (1989) (0)
Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth (2010) (0)
Simulation of the quantum-confined Stark effect in a single InGaN quantum dot (2005) (0)
Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells (2001) (0)
Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystals (1996) (0)
X-ray characterisation of the basal stacking fault densities of (112̄2) GaN (2021) (0)
High spatial resolution EDX microanalysis of III–V semiconducting materials (2020) (0)
Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy (1997) (0)
The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials (2010) (0)
Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system (2010) (0)
STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures (1986) (0)
High resolution divergent-beam X-ray topography (1970) (0)
Progress towards quantitative dopant profiling in the SEM (2010) (0)
OMVPE growth of GaN based materials in a close spaced showerhead reactor for electronic and optoelectronic applications (2003) (0)
The Mystery of the Last Supper: Dating the crucifixion – the first clues (2011) (0)
Can a Materials Scientist Move Mount Sinai (2004) (0)
A Tem Study Of The Microstructural Evolution Of Mbe-Grown Gan (1997) (0)
Moon village: show us the money (2018) (0)
Research data supporting "X-ray reflectivity method for the characterisation of InGaN/GaN quantum well interface" (2016) (0)
Polarization-field control in nitride light emitters Optimizing GaN ( 11 2̄ 2 ) hetero-epitaxial templates grown on ( 10 1̄ 0 ) sapphire (2015) (0)
Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography (2010) (0)
Recent Applications of High Voltage Electron Microscopy in Various Branches of Science1 (2016) (0)
HUMPHREYS How Many People Were in the Exodus from Egypt ? 1 (2004) (0)
Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers (2010) (0)
Let there be light (2007) (0)
The Mystery of the Last Supper: The moon will be turned to blood (2011) (0)
High resolution dopant profiling in the SEM, image widths and surface band-bending (2008) (0)
Plenary Special Lectures (2010) (0)
The Effect of Humidity on the Interlayer Interaction of Bi-layer Graphene (2020) (0)
The Mystery of the Last Supper: A new reconstruction of the final days of Jesus (2011) (0)
MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate (2016) (0)
8-1 Modelling Tools for the Efficient Design of New Alloys (2006) (0)
An HREM investigation of a {l_brace}1{bar 2}1{r_brace}{sub L1{sub 0}} boundary in TiAl (1995) (0)
Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC) (2017) (0)
Research data supporting "Comparative study of (0001) and (11-22) InGaN based light emitting diodes" (2016) (0)
Research data supporting "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence" (2016) (0)
Determination of the p-n Junction Built-in Voltage using Quantitative Dopant Mapping in the FEG-SEM (2005) (0)
The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl (2000) (0)
Optical Studies of Non-linear Absorption in Single InGaN/GaN Quantum Dots (2007) (0)
Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials (2022) (0)
Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN (2011) (0)
Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials (2017) (0)
Toward defect-free semi-polar GaN templates on pre-structured sapphire (Phys. Status Solidi B 5/2016) (2016) (0)
The boy who lost ten days of his life (1998) (0)
Compositional and Morphological Variation in GaN/AlN/AlGaN Heterostructures (2008) (0)
Electron energy loss near edge structures of intermetallic alloys and grain boundaries in NiAl (1996) (0)
Fundamentals of Materials for Energy and Environmental Sustainability: Lighting (2011) (0)
Characterisation of non-polar (11-20) gallium nitride using TEM techniques (2008) (0)
Evolution of InGaN/GaN nanostructures and wetting layers during annealing (2005) (0)
Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures (2008) (0)
1 Characterization of p-GaN 1-xAsx / nGaN PN Junction Diodes (2017) (0)
Growth and characterization of semi-polar (11-22) GaN with in-situ SiN x interlayers (2006) (0)
Experimental observation of the Eshelby-Stroh twist in dislocations in GaN imaged end-on (2012) (0)
Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer (2008) (0)
Research data supporting "The microstructure of non-polar a-plane (11-20) InGaN quantum wells" (2016) (0)
Research data supporting "Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells" (2015) (0)
Characterisation of silicon nanocrystals and Er3+ in silica (2000) (0)
In GaN-GaN quantum wells: their luminescent and nano-structural properties (2005) (0)
Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope (2018) (0)
The Mystery of the Last Supper: Does ancient Egypt hold a key to unlocking the problem of the last supper? (2011) (0)
Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes (2013) (0)
1 Characterization of GaN 1x As x / GaN PN Junction Diodes (2016) (0)
The Mystery of the Last Supper: Four mysteries of the last week of Jesus (2011) (0)
IN THE SUPREME COURT OF TENNESSEE (2006) (0)
Research data supporting structural impact on the nanoscale optical properties of InGaN core-shell nanorods (2017) (0)
Terahertz dielectric properties of free-standing non-polar GaN (2015) (0)
The electron density in metals and semiconductors using electron and X-ray diffraction (1981) (0)
Enhanced efficiency of near-UV emitting LEDs for solid-state Righting applications - art. no. 67970O (2007) (0)
Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data (2003) (0)
PANIC: a 3D dislocation dynamics model for climb and glide in epitaxial films and heterostructures (2014) (0)
SIGNIFICANCE OF MULTIPLE INELASTIC SCATTERING IN SCANNING ELECTRON MICROSCOPY CHANNELLING PATTERNS. (1972) (0)
Energy filtered scanning electron microscopy: applications to characterisation of semiconductors (2010) (0)
Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells (2013) (0)
An energy absorbing device (1973) (0)
Energy filtered scanning electron microscopy: Applications to dopant contrast (2010) (0)
Single-step manufacturing process for the production of graphene-V/III LED heterostructures (2017) (0)
Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD (2018) (0)
Dislocation behaviour in Ge sub x Si sub 1-x epilayers on (001)Si (1989) (0)
The date of the last supper: the hidden clues in the gospels (2011) (0)
The effect of AlGaN and SiN interlayers on GaN/Si(111) (2005) (0)
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008) (2008) (0)
Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors (1988) (0)
Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer (2016) (0)
Experimental Tem and Image Simulation of Dislocations in Ti3A1 (1994) (0)
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells (2012) (0)
SiH 4 exposure of GaN surfaces: A useful tool for highlighting dislocations (2005) (0)
The Economic Laws of Scientific Research Terence Kealey Macmillan Press, Basingstoke and London, 1996 (382 pages). £47.50, hardback, ISBN 0-333-56045-0; £15.99, paperback, ISBN 0-333-65755-1. Also St Martin's Press, New York, 1996, ISBN 0-312-12847-9. (1997) (0)
Carrier dynamics in a-plane GaN/AlGaN quantum wells grown on r-plane sapphire substrates (2010) (0)
Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS (2010) (0)
Exciton localisation in InGaN-GaN quantum wells (2004) (0)
Surface physics: Hopping atoms in crystal growth (1985) (0)
Progress towards site-specific dopant profiling in the scanning electron microscope (2010) (0)
The Mystery of the Last Supper: Can we reconstruct the Jewish calendar at the time of Christ? (2011) (0)
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022) (2022) (0)
A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM (2018) (0)
InGaN micro-LEDs integrated onto an ultra-thin, colloidal quantum dot functionalized glass platform (2016) (0)
A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer (2005) (0)
Book Review: Transmission Electron Microscopy. By L. Reimer (1989) (0)
Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells (2008) (0)
The contribution of carrier localisation to efficiency droop in GaN LEDs (2010) (0)
Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions (1998) (0)
The Mystery of the Last Supper: From the last supper to the crucifixion: a new analysis of the gospel accounts (2011) (0)
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy (2016) (0)
A study of near-UV emitting InGaN/AlGaN and InGaN/AlInGaN QW structures (2005) (0)
In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication (2018) (0)
Geophysical Research Letters Machine Learning Predicts Laboratory Earthquakes (2017) (0)
Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure (2016) (0)
A Model for Estimating the Stress Induced During Oxidation of Sharp Silicon Structures (1995) (0)
Structure factor determination in germanium by zone-axis CBED (1994) (0)
Dislocation core structures in ( 0001 ) (2016) (0)
Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation) (2020) (0)
Interface between graphene and silicon of various surface planes (2020) (0)
The Mystery of the Last Supper: The problem of the last supper (2011) (0)
Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications (2007) (0)
Energy-loss spectroscopy of GaN alloys and quantum wells (2018) (0)
Designing Materials: From Power Plant to Brilliant Light Emitting Diodes (2020) (0)
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach (2011) (0)
Carrier localisation mechanisms and efficiency droop in nitride quantum wells (2012) (0)
Theory of Electron Scattering and Electron Diffraction (2002) (0)
Microstructure and Strain-Free Lattice Parameters of ScGaN Films (2005) (0)
Microphotoluminescence studies of single InGaN quantum dots (0)
Hopping atoms in crystal growth (1985) (0)
Wavon radiation in electron diffraction (1981) (0)
LASERS, OPTICS, AND OPTOELECTRONICS 101101 High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film (3 pages) (2009) (0)
Lawrence Berkeley & Chemical Variation of Dislocation Morphology with Strain in Ge Si 1 Epilayers on (lOO)Si x (2013) (0)
Research data supporting "Dislocations in AlGaN: core structure, atom segregation and optical properties" (2017) (0)
Highly Si-doped Al0.72Ga0.28N layers: n-type conductivity bound by the process temperature (2014) (0)
Development of low dislocation density GaN for 380nm LEDs (2005) (0)
4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool (2017) (0)
Understanding Materials (2020) (0)
The Mystery of the Last Supper: Did Jesus use the solar calendar of Qumran for his last supper Passover? (2011) (0)
The orthorhombic and tetragonal phases of Y sub 1 Ba sub 2 Cu sub 3 O sub 9-y (1987) (0)
Degradation of InGaN/GaN laser diodes investigated by cross-sectional electron beam induced current imaging (2017) (0)
Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation (2002) (0)
Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells (2007) (0)
High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures (1987) (0)
Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties (2018) (0)
Defect formation in ZnTe and (Cd,Zn)Te epitaxial layers grown on (001) GaAs (1996) (0)
Recent important advances in materials science (1997) (0)
Abstract for an Invited Paper for the MAR10 Meeting of The American Physical Society The contribution of carrier localisation to efficiency droop in GaN LEDs1 (2009) (0)
Time-resolved dynamics in single InGaN quantum dots (Invited Paper) (2005) (0)
Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100) (2020) (0)
Microstructural aspects of the early stages of GaN growth by MOCVD (2001) (0)
The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN (2000) (0)
Electron microscopy of localisation effects in quantum wells of InGaN in GaN (2003) (0)
Exciton localization in (In,Ga)N/GaN single quantum well structures. (2003) (0)
The effect of Si on the growth mode of GaN (2006) (0)
The atomic structure of GaN-based quantum wells and interfaces (2008) (0)
Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs (2018) (0)
Research data supporting “Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold” (2016) (0)
Ahmed Zewail — A Towering Visionary (2017) (0)
Lattice distortions in GaN thin films on (0001) sapphire (2010) (0)
How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems (2014) (0)
Chemical mapping of V-defects in InGaN MQWs. (2000) (0)
Historical Eclipses and the Earth's Rotation F. Richard Stephenson Cambridge University Press, Cambridge, 1997 (557 pages) £95 hardback, ISBN 0-521-46194-4 (1998) (0)
1. Perspectives on Electronic and Photonic Materials (2017) (0)
Epitaxial silicide growth on Si(001) (2003) (0)
TEM compositional microanalysis in III–V alloys (2020) (0)
SEM doping contrast at a Si pn junction (2018) (0)
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs (2013) (0)
Foreword by I. Howard Marshall (2011) (0)
Characterisation of AlGaN epilayers on (0001) sapphire grown by LP-MOVPE (2004) (0)
High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nm (2007) (0)
Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory (1998) (0)
DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS. (1976) (0)
Chapter 42:Turning Points in Understanding the Emission of Brilliant Light from Highly Defective GaN-Based Materials and Devices (2007) (0)
Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices (2010) (0)
EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs (2008) (0)
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes (2005) (0)
The Mystery of the Last Supper: Was the lost ancient Jewish calendar used in Israel at the time of Jesus? (2011) (0)
The Mystery of the Last Supper: The date of the crucifixion (2011) (0)
An Initial Exploration of GaN Grown on a Ge-(111) Substrate (2008) (0)
The Mystery of the Last Supper: Bibliography (2011) (0)
Dislocation core structures in Si-doped (2016) (0)
Exploiting dynamical high-energy electron diffraction effects (1987) (0)
Ab initio evaluation of the potential use of Sc-based III-nitrides in optoelectronics (2014) (0)
Research data supporting "Carrier Localization in the Vicinity of Dislocations in InGaN" (2016) (0)
Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis) (2001) (0)
GaN on Si device substrate with GaN layer including sub-10nm SiNx interlayers that promote crystal growth with reduced threading dislocations (2010) (0)
Low-cost high-efficiency GaN LEDs on large-area silicon substrates (2012) (0)
Q-factor measurements on planar nitride cavities (2010) (0)
Structural and optical properties of ( 11 2̅ 2 ) InGaN quantum wells compared to ( 0001 ) and ( 11 2̅ 0 ) (2016) (0)
The combined convergent beam/critical voltage technique in high voltage electron microscopy (1980) (0)
Characteristics and applications of InGaN micro-light emitting diodes on Si substrates (2013) (0)
Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness (2016) (0)
100 keV electron beam damage of metals and oxides (1991) (0)
MICRO-84: Electron microscopy 50 years on (1984) (0)
The Mystery of the Last Supper: Discovering the lost calendar of ancient Israel (2011) (0)
Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101 , 125421 (2020)] (2021) (0)

This paper list is powered by the following services:

Other Resources About Colin Humphreys

en.wikipedia.org

What Schools Are Affiliated With Colin Humphreys?

Colin Humphreys is affiliated with the following schools:

Colin Humphreys's Academic­Influence.com Rankings