Dan. Haneman
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Physics
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(Suggest an Edit or Addition)Dan. Haneman's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Surface Structures and Properties of Diamond-Structure Semiconductors (1961) (273)
- Surfaces of silicon (1987) (167)
- Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon (1968) (100)
- Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germanium (1959) (95)
- Dangling bonds on silicon (1978) (66)
- Auger spectra and LEED patterns from vacuum cleaved silicon crystals with calibrated deposits of iron (1971) (55)
- Properties and applications of copper indium diselenide (1988) (53)
- Properties of Clean Silicon Surfaces by Paramagnetic Resonance (1966) (50)
- Visible electroluminescence from native SiO2 on n-type Si substrates (1999) (48)
- Electron-Paramagnetic-Resonance Study of Clean and Oxygen-Exposed Surfaces of GaAs, AlSb, and Other III-V Compounds (1971) (45)
- Depths of Low‐Energy Ion Bombardment Damage in Germanium (1966) (45)
- Structure and adsorption characteristics of (111) and (111) surfaces of InSb cleaned by ion bombardment and annealing (1960) (45)
- Computer calculations of semiconductor surface structures (1968) (38)
- Preparation of stable efficient CdSe films for solar PEC cells (1981) (37)
- Estimation of surface charge densities for low-energy atom diffraction (1982) (37)
- Flash evaporation of CuInSe2 films (1988) (35)
- Electrodeposition of CuInSe2 thin films from aqueous solution (1989) (35)
- Interpretation of low energy electron diffraction data to predict surface atom arrangements (1964) (34)
- Adsorption and Bonding Properties of Cleavage Surfaces of Bismuth Telluride (1960) (32)
- Verbenone Bubble Caps Ineffective as a Preventive Strategy Against Mountain Pine Beetle Attacks in Ponderosa Pine (1990) (30)
- Evidence for carbon contamination on vacuum heated surfaces by electron paramagnetic resonance (1970) (30)
- Low-Temperature EPR Measurements on in situ Vacuum-Cleaved Silicon (1975) (30)
- Electroluminescence in porous silicon (1994) (30)
- COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING (1960) (29)
- Recombination effects on current-voltage characteristics of illuminated surface barrier cells (1982) (29)
- Atomic Mating of Germanium Surfaces (1967) (27)
- LEED analysis and energy minimization calculations for Si(111) (7×7) surface structures (1979) (26)
- Vacuum Thermal Etching of Germanium and Silicon Surfaces (1967) (23)
- Composition of porous silicon (1993) (23)
- HEAT-TREATMENT EFFECTS ON POROUS SILICON (1994) (23)
- Auger spectra and LEED patterns from nickel deposits on cleaved silicon (1971) (21)
- Factors affecting the efficiency of chemically deposited CdSe based photoelectrochemical cells (1983) (21)
- SILICON (111) 7×7 STRUCTURE (1969) (21)
- Behavior of InSb Surfaces during Heat Treatment (1960) (21)
- Improvements in lifetime of CdSe photoelectrochemical solar cells (1984) (21)
- Sulfur Substitution during Operation of CdSe Photoanodes and Mechanism of Surface Protection (1980) (21)
- Positive Ion and Electron Emission from Cleaved Si and Ge (1998) (20)
- Tear Marks on Cleaved Germanium Surfaces (1963) (20)
- Vacuum Thermal Decomposition of III–V Compound Surfaces (1966) (19)
- Cleavage luminescence from InP, Ge and GexSi1-x (1994) (19)
- Low‐Energy‐Ion‐Bombardment Damage in Germanium (1966) (18)
- Three‐bond scission and the structure of the cleaved Si(111) surface (1988) (18)
- Local temperature increases during electric‐field‐induced transistor formation in CuInSe2 (1994) (17)
- Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations (1979) (17)
- Persistent photoconductivity from thin layer amorphous silicon doping modulated superlattices (1988) (17)
- Electroluminescence from spark‐processed silicon (1995) (17)
- Carbon EPR signal from vacuum heated surfaces (1971) (17)
- Optimising the photoelectrochemical performance of electrodeposited CdSe semiconductor electrodes (1982) (17)
- Electrochemical Doping of TiO2 and Fe2 O 3 (1977) (16)
- SURFACE TOPOGRAPHY OF LASER ANNEALED SILICON (1982) (16)
- Comparison of Thermal Behavior of Vacuum-Crushed, Air-Crushed, and Mechanically Polished Silicon Surfaces by Electron Paramagnetic Resonance (1968) (16)
- Summary Abstract: (1×1) surface unit cell on Ge cleaved at liquid helium temperatures (1982) (15)
- Structures and phases of cleaved Ge and Si surfaces (1983) (15)
- Semiconductor bond rupture phenomena and surface properties (1996) (14)
- Solar energy converston by photoelectrochemical cells (1981) (13)
- Structure of annealed and unnealed CdSe films for photoelectrochemical solar energy conversion (1981) (13)
- Current-voltage characteristics of surface barrier liquid-junction and metal-junction cells including recombination (1982) (13)
- Growth and surface properties of CuInSe2 (1986) (13)
- The analysis of spectral yield and accelerating field characteristics of the photoelectric emission from semiconductors (1960) (13)
- Photoconductive resonance in silicon: Theory and experiment (1979) (13)
- Liquid-junction cells with thin-film CuInSe2 (1986) (13)
- High efficiency blue–green electroluminescence and scanning tunneling microscopy studies of porous silicon (1998) (13)
- An analysis of the current-voltage characteristics of thin film front wall illuminated and back wall illuminated liquid junction and schottky barrier solar cells (1982) (13)
- Wave functions and (110) surface structure of III–V compounds (1978) (13)
- Polycrystalline CuInSe/sub 2/ photoelectrochemical cells (1985) (13)
- Parameters of cleaved, annealed, and oxygen and hydrogen covered surfaces of Ge and Si by the partial split technique (1969) (12)
- Thickness and doping dependence of the optical gap in amorphous hydrogenated silicon films (1988) (12)
- Surfaces for photoelectrochemical cells (1979) (12)
- Hyperfine structure in the EPR spectrum of O−2 on GaAs surfaces (1977) (12)
- Surface valence band and plasmon features on clean cleaved silicon (1974) (12)
- Comparison of Charge Densities and Pseudo Charge Densities for Si_{2} (1978) (12)
- Progression of cleavage in Si, Ge, and GaAs (1993) (12)
- Preparation and characterization of CuInSe2 and CdS films (1984) (12)
- Surface recombination velocity and barrier width from surface photovoltage measurements (1985) (12)
- Strain of laser annealed silicon surfaces (1982) (12)
- Spin dependent recombination and photoconductive resonance in silicon (1978) (12)
- THEORY AND PRINCIPLES OF LOW TEMPERATURE HOT AIR ENGINES FUELED BY SOLAR ENERGY (1975) (12)
- LEED analysis of Si(111)−(7 × 7) surface models (1980) (12)
- Valence band structure of CuInS2 by soft X-ray spectroscopy (1992) (11)
- Preparation of titanium dioxide films as solar photocatalysts (1979) (11)
- A flux analysis of multiple junction solar cells: The general equations, with computations for an n-CdS/n-GaAs photoanode (1986) (11)
- Precision determination of long-wavelength cleavage luminescence energy and derivation of minimum surface state gap on clean cleaved Si surfaces (1993) (10)
- Gas adsorption and X-ray studies of internal mated splits in Ge and Si (1969) (10)
- CuInSe2 films for photovoltaics and photoelectrochemistry (1988) (10)
- RESEARCH NOTES: Strain energy of (111) and ([111 over bar]) surfaces of InSb (1965) (10)
- Recombination radiation from vacuum splits in GaAs (1970) (10)
- Unified description of silicon (111) surface transitions (1982) (10)
- A new model of spin-dependent resonance at Si surfaces (1980) (10)
- Electroluminescence from cadmium sulphide MS, MIS and SIS devices (1973) (10)
- Effect of gas exposure on the EPR signal from amorphous silicon films (1978) (10)
- Temperature dependence for the power outputs of n-CdSe liquid junction cells (1981) (10)
- Paramagnetic surface states of germanium (1973) (9)
- Spin polarization and temperature effects in reflection diffraction from W(001) (1977) (9)
- Recent developments in ESR techniques and results for semiconductor surface regions (1984) (9)
- Surface stress in polished and clean (111) surfaces of Ge, InSb and GaSb (1967) (9)
- Electron paramagnetic resonance from germanium surfaces (1970) (9)
- Atomic Mismatch on Closure of Controlled Partial Splits in Silicon (1972) (9)
- Junction sharpness in field‐induced transistor structures in CuxAg1−xInSe2 (1996) (9)
- Correlation of LEED surface structures and surface tear marks on cleaved Si surfaces (1969) (9)
- Current–voltage characteristics of Schottky barrier structures on porous silicon, and effect of an organic stabilizer film (2000) (9)
- Comparison of EPR signals from oxygen in the gas state and in presence of adsorbing surfaces (1977) (9)
- Thermal conversion of Si(111)2 × 1 cleaved surface structure to Si(111)7 × 7 structure (1989) (8)
- Si(111)‐(7×7)表面のモデルのLEED解析 (1980) (8)
- Properties of CuIn1-xGaxSe2 (1992) (8)
- LEED structures on Si(111) surfaces quenched from elevated-temperature cleavages (1998) (8)
- Evaluation of recent Si(111)−(7×7) surface models (1981) (7)
- The effects of temperature on the power outputs of two metal dichalcogenide liquid junction cells (1981) (7)
- A flux analysis of the current–voltage characteristics of thin film frontwall illuminated and backwall illuminated liquid junction and metal junction solar cells (1983) (7)
- Nucleation and Crystal Growth in Chlorpromazine (1964) (7)
- EFFECT OF ELECTRIC CURRENT ON DURATION OF CLEAVAGE LUMINESCENCE (1996) (7)
- Degradation processes in polycrystalline copper indium diselenide photoelectrochemical cells (1991) (7)
- Electron paramagnetic resonance from II-VI and IV-VI semiconductor surfaces (1972) (7)
- Electron paramagnetic resonance investigation of the surfaces of Si-Ge alloys (1972) (7)
- Direct observation of gap states in a-Si: H through the SiL23 soft X-ray emission spectrum (1988) (7)
- Electroluminescence from new silicon systems (1997) (7)
- Electroluminescence from laser-grooved silicon (1998) (7)
- Heterojunctions of CuInSe2 with amorphous hydrogenated silicon (1993) (7)
- Rupture luminescence from natural fibers (1999) (6)
- New paramegnetic centres at SiSiO2 interfaces by photoconductive resonance (1980) (6)
- Nitrogen adsorption and native contamination on Fe(211) surfaces (1997) (6)
- Semiconductor Surface States Considered on the Hubbard Model; Correlation with Electron Paramagnetic Resonance Data (1972) (6)
- Light emission from Si cleaved and gas-covered surfaces (1991) (6)
- Origin of cold cleaved (7 × 7) structure on silicon (111) surfaces (1974) (6)
- Display and measurement of semiconductor surface barriers by SEM techniques (1974) (6)
- Band gap and activation energy in amorphous silicon doping-modulated superlattices (1988) (6)
- d-state contribution to STM. Structure of van der Waals surfaces (TaSe2, Mo0.5W0.5Se2) and relevance for catalysis (1993) (6)
- Oxygen adsorption on vacuum cleaved GaAs at liquid nitrogen temperatures by LEED (1971) (6)
- High sensitivity to temperature and quantum effects in vanadium oxide diodes (1996) (6)
- Degradation and regeneration of amorphous silicon solar cells (1984) (6)
- Electroluminescence and nature of lightly spark-processed silicon (1998) (6)
- Surface structures on cleaved silicon by scanning tunnelling microscopy (1999) (6)
- Electroluminescence from mechanically damaged oxidized silicon (1998) (6)
- Origin of field‐enhanced conductivity in amorphous hydrogenated silicon (1987) (6)
- Cadmium selenide-amorphous hydrogenated silicon heterostructures (1995) (6)
- Valence band structure of CuInSe2 by soft X-ray spectroscopy (1991) (6)
- Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces (1974) (6)
- Paramagnetic centers at vacuum crushed annealed silicon on exposure to oxygen and parabenzoquinone (1984) (6)
- The Diffusion of Iron and Nickel to Silicon Surfaces (1970) (6)
- Special conductivity effects in amorphous hydrogenated silicon (1988) (5)
- Optical and electronic properties of CuInSe2‐based photoelectrochemical solar structures (1986) (5)
- Detection of temperature rise during cleavage of silicon (1996) (5)
- Tunable photoluminescence from amorphous silicon doping modulated multilayers (1989) (5)
- Fracture phenomena in silicon imaged by infrared radiation from ejected small particles (1998) (5)
- Barkhausen Noise from a Cylindrical Core (1955) (5)
- The attainment of clean surfaces by breaking crystals in ultra-high vacuum☆ (1959) (5)
- Two-centre theory of large surface unit cells on semiconductors (1970) (5)
- Magnetic-field-induced transitions in magnetite observed by EPR (1976) (5)
- Electroluminescence from ZnS:MnCl2 thin film devices co-doped with MgF2 or MgS (1999) (5)
- Surface barriers and potentials from luminescence on cleaved Si, GaAs, and InP (1993) (5)
- Electrically active paramagnetic centres at Si-SiO2 interfaces (1981) (4)
- Stress modulated photoelectrochemical spectroscopy (1982) (4)
- Effect of an SiC layer on p-i-n amorphous silicon solar cells (1982) (4)
- Hillocks on Sputtered Ge Surfaces (1963) (4)
- Durability of polycrystalline copper indium diselenide photoelectrochemical cells (1989) (4)
- On the electromechanical effect in Si and Ge (1996) (4)
- Electroluminescence from amorphous-silicon-based switching devices (1997) (4)
- Band structures, gap states and doping effects in amorphous hydrogenated and crystalline silicon studied by soft X-ray emission (1991) (4)
- Low-energy electron diffraction from heated porous silicon surfaces (2000) (4)
- Analysis of the Si(111)5×5-2×1 phase boundary (1993) (4)
- Optically induced changes in the sub-band gap absorption of hydrogenated amorphous silicon (1987) (4)
- Electroluminescence from controlled splits in CdS, CdSe, and GaAs0.2P0.8 (1973) (4)
- SILICON (111)−7 STRUCTURE OBTAINED BY CLEAVAGE AT ROOM TEMPERATURE (1970) (4)
- Phase changes in Y1Ba2Cu3O7-x induced by Fe2O3 and V2O5 dopants (1988) (3)
- Thin films of CuInSe2 for photoelectrochemical cells by flash evaporation (1988) (3)
- HIGH TEMPERATURE COEFFICIENT OF RESISTANCE IN VANADIUM OXIDE DIODES (1997) (3)
- Low temperature cleavage luminescence of silicon (1995) (3)
- Potential and redox couple dependence of two-beam spectroscopic behaviour of some semiconductor-electrolyte interfaces (1983) (3)
- Surface barrier heights and changes induced by ferrocene group addition on Ge and Si surfaces cleaved in electrolytes (1980) (3)
- X-ray photoelectron spectroscopy studies of the role of etching in improving CdSe films for photoelectrochemical solar energy conversion (1981) (3)
- Medium voltage negative differential conductivity in GaAs split specimens (1972) (3)
- Nitrite reduction to ammonia in cadmium-chalcogenide-polysulfide solar cells (1986) (3)
- Derivation of charge transfer parameters at semiconductor-liquid interfaces (1985) (3)
- INVESTIGATIONS OF SURFACE PROPERTIES OF SILICON AND OTHER SEMICONDUCTORS (1960) (2)
- Thermoelectric voltages from Si cleavages (1997) (2)
- Temperature dependence of photoconductivity of amorphous silicon doping multilayers (1989) (2)
- Electroluminescence from carbon‐doped GaAs junctions with semi‐insulating GaAs (1995) (2)
- Fluorinated hydrogenated silicon films (1990) (2)
- Cleavage Processes and Steps in Semiconductors (1993) (2)
- Atomically resolved structure of vacuum-heated porous silicon (2000) (2)
- Chemical Etching of Partial Splits in Ge and Si (1969) (2)
- XPS studies of differences in contamination behaviour of amorphous and crystalline Ge (1978) (2)
- Current Gain in Formed Point Contact n-type Germanium Transistors (1956) (2)
- Metal contacts on amorphous hydrogenated silicon: effects of annealing (1992) (2)
- Quantum confinement: mechanism for visible electroluminescence from spark-processed silicon (1996) (2)
- Theory of dipole generation at cleaved semiconductor surfaces (1996) (2)
- Effects of fluids and temperature on EPR from damaged silicon (1979) (2)
- Absorption in amorphous silicon doping-modulated multilayers (1987) (2)
- EPR centres at a gas-solid interface induced by a microwave gas plasma (1978) (2)
- Strain-energy calculations of surface and step structures on silicon (111) (1992) (1)
- Solar Electricity and Recent Progress in Thin Film Photovoltaics (1984) (1)
- Preparation and analysis of cross-sections of etched and unetched CdSe semiconductor thin films (1982) (1)
- Observation and analysis of conductance oscillations in scanning tunneling microscopy of clean InP(110) surfaces (1995) (1)
- Pseudocharge densities and the (110) surface of GaAs (1978) (1)
- ELECTROCHEMICAL DOPING OF TITANIUM DIOXIDE AND IRON(III) OXIDE (1977) (1)
- High Resolution Surface Structure of Porous Silicon (2000) (1)
- Recent Progress in Investigation of Luminescent and Electrical Phenomena from Semiconductor Cleavage (1996) (1)
- Recent Progress in Semiconductor Surface Studies by EPR (1976) (1)
- Action of copper indium diselenide photoelectrochemical cells (1991) (1)
- Electro-, Photo- and Scanning Tunneling—Luminescence Studies of Efficient Light-Emitting Porous Silicon (2000) (1)
- Measurement of conversion temperatures for Si(111) 2 × 1 (1989) (1)
- The Noise Generated in a Coil with a Ferromagnetic Core (1954) (1)
- Porous silicon studied by SiL23 soft X-ray emission (1996) (1)
- THE GERMANIUM-AQUEOUS ELECTROLYTE CONTACT ZONE (1965) (1)
- Point Contact Transistor Studies using Radioactive Collectors (1957) (1)
- DIRECT OBSERVATION OF "GAP STATES" IN c-Si AND a-Si : H BY SOFT X-RAY EMISSION (1987) (1)
- SULFUR SUBSTITUTION DURING OPERATION OF CADMIUM SELENIDE PHOTOANODES AND MECHANISM OF SURFACE PROTECTION (1980) (0)
- OPTIMIZING THE PHOTOELECTROCHEMICAL PERFORMANCE OF ELECTRODEPOSITED CADMIUM SELENIDE SEMICONDUCTOR ELECTRODES (1982) (0)
- Transfer of Material from Radioactive Point Contacts on Germanium (1958) (0)
- Maximizing Return on Investment in Research and Development (1999) (0)
- Breakdown Effect in p-n Alloy Germanium Junctions (2016) (0)
- Analysis of photoexcited carrier losses in photoelectrochemical cells (1981) (0)
- Surface Properties of Lunar Material by Electron Paramagnetic Resonance. (1971) (0)
- A New Model for the Cleaved Si (111)-(2x1) Surface (1988) (0)
- Reflectivity of Porous Silicon (2002) (0)
- Conductivity and defects in amorphous silicon doping modulated multilayers (1991) (0)
- The Attainment of Clean Surfaces by Breaking Crystals in Ultra-High Vacuum (1960) (0)
- Electron Paramagnetic Resonance Study of GaAs Surfaces. (1972) (0)
- Visual Observations of Low-Energy Electron Beams (1966) (0)
- Leaders of LEED (1987) (0)
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