Djamshid. Chadi
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Physics
Djamshid. Chadi's Degrees
- PhD Physics University of California, Berkeley
- Masters Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
Why Is Djamshid. Chadi Influential?
(Suggest an Edit or Addition)Djamshid. Chadi's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Special points for Brillouin-zone integrations (1977) (2405)
- Special Points in the Brillouin Zone (1973) (1203)
- Atomic and Electronic Structures of Reconstructed Si(100) Surfaces (1979) (696)
- Spin-orbit splitting in crystalline and compositionally disordered semiconductors (1977) (341)
- Tight‐binding calculations of the valence bands of diamond and zincblende crystals (1975) (320)
- Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces (1987) (308)
- Energy-minimization approach to the atomic geometry of semiconductor surfaces (1978) (247)
- MICROSCOPIC STUDY OF OXYGEN-VACANCY DEFECTS IN FERROELECTRIC PEROVSKITES (1998) (240)
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces (1984) (213)
- 110) surface atomic structures of covalent and ionic semiconductors (1979) (208)
- Stability of deep donor and acceptor centers in GaN, AlN, and BN (1997) (164)
- Enumeration of periodic tetrahedral frameworks (1997) (150)
- Si(100) surfaces: Atomic and electronic structures (1979) (146)
- Calculation of lattice dynamical properties from electronic energies: Application to C, Si and Ge (1976) (131)
- Hydrogen-mediated spin-spin interaction in ZnCoO. (2005) (120)
- (2 × 1) reconstructed Si(001) surface: Self-consistent calculations of dimer models (1980) (117)
- Electronic Structure of Hg 1 − x Cd x Te Alloys and Charge-Density Calculations Using Representative k Points (1973) (116)
- DIPOLAR DEFECT MODEL FOR FATIGUE IN FERROELECTRIC PEROVSKITES (1999) (106)
- Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende Semiconductors (1973) (104)
- (110) surface states of GaAs: Sensitivity of electronic structure to surface structure (1978) (100)
- Hydrogen-induced ferromagnetism in ZnCoO (2006) (99)
- Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs (1984) (98)
- THEORETICAL STUDY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GASE NANOTUBES (1998) (97)
- Scaling studies of the resistance of the one-dimensional Anderson model with general disorder (1981) (94)
- Calculation of the atomic geometries of the (110) surfaces of III-V compound semiconductors (1985) (91)
- Self‐compensation through a large lattice relaxation in p‐type ZnSe (1989) (88)
- Reflectivities and Electronic Band Structures of CdTe and HgTe (1972) (85)
- Theory of the Magnetic Susceptibility of Tetrahedral Semiconductors (1975) (75)
- X-Ray Photoemission Valence-Band Spectra and Theoretical Valence-Band Densities of States for Ge, GaAs, and ZnSe (1972) (75)
- Bulk electronic structure of SiO 2 (1979) (66)
- FERMI-LEVEL-PINNING DEFECTS IN HIGHLY N-DOPED SILICON (1997) (64)
- Localized-orbital description of wave functions and energy bands in semiconductors (1977) (64)
- Theoretical study of the electronic structure of a high-angle tilt grain boundary in Si (1984) (62)
- Predictor of p-type doping in II-VI semiconductors (1999) (62)
- Column V acceptors in ZnSe: Theory and experiment (1991) (59)
- First principles study of Pb vacancies in PbTiO3 (2000) (58)
- Ab initio study of 180° domain wall energy and structure in PbTiO3 (1999) (53)
- Vacancy in Silicon Revisited: Structure and Pressure Effects (1998) (51)
- π-bonded molecular and chain models for the Si(111) surface (1982) (49)
- Total‐energy calculations on the Takayanagi model for the Si(111) 7×7 surface (1986) (48)
- Electronic band structures and charge densities of NbC and NbN (1974) (43)
- Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and Bonding (1984) (39)
- Surface structure and orbital symmetries of (110) surface states of GaAs (1978) (36)
- Atomic origin of deep levels in p-type GaN: Theory (1997) (36)
- Atomic structure of Si(111) surfaces (1980) (34)
- INTRINSIC (111) SURFACE STATES OF Ge, GaAs AND ZnSe (1975) (34)
- Chemisorption site geometry and interface electronic structure of Ga and Al on GaAs(110) (1979) (32)
- Surface resonances and the oxidation of single‐crystal aluminum (1978) (31)
- Atomic and electronic structures of (111), (211), and (311) surfaces of GaAs (1985) (30)
- Reexamination of the Si(100) surface reconstruction. (1980) (30)
- Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfaces (1981) (30)
- The Problem of Doping in II-VI Semiconductors (1994) (30)
- First-Principles Study of Structural Bistability in Ga- and In-Doped CdF 2 (1999) (29)
- Self-compensation in nitrogen-doped ZnSe (1993) (28)
- Electronic structure of Si(111) surfaces (1980) (28)
- Oxygen configurations in silica (2000) (27)
- Acceptor and donor states of impurities in wide band gap II VI semiconductors (1994) (27)
- Microscopic structure of DX centers of column III and VII impurities in CdTe (1995) (26)
- Theoretical study of the atomic and electronic structure of the c-4 × 4 reconstructed GaAs(100) surface (1982) (26)
- (110) surface states of GaAs and matrix element effects in angle‐resolved photoemission (1978) (25)
- Holographic storage media based on optically active bistable defects (1998) (24)
- Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes. (2003) (24)
- New adatom model for Si(111) 7×7 and Si(111)-Ge 5×5 reconstructed surfaces (1984) (24)
- Atomic structure of reconstructed group IV and III–V semiconductor surfaces (1989) (22)
- DX centres in CdZnTe:Cl and their applications (1996) (22)
- Spin relaxation of conduction electrons in GaAs (1976) (22)
- Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states (2003) (21)
- Intrinsic and H-induced defects at Si-SiO 2 interfaces (2001) (21)
- Electronic structure of the Al-GaAs(110) surface chemisorption system (1981) (21)
- Semiconductor surface reconstruction (1983) (20)
- Multiple bonding on C(111)‐2×1 surfaces: Surface structural determination from energy minimization (1984) (20)
- Theory of the electronic and atomic structure of Si(111): Surface spin‐polarization effects (1982) (19)
- Spin relaxation of conduction electrons in Al x Ga 1-x As (1975) (19)
- Ab initio study of dipolar defects and 180° domain walls in PbTiO3 (2000) (18)
- Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1′ center in α-quartz (2003) (17)
- Study of the reconstructed GaAs(100) surface (1983) (16)
- Theoretical studies of Si(111) surface structures (1981) (16)
- Si(111) 2×1 surface reconstructions calculated by the density‐functional method (1983) (14)
- Sb overlayers on (110) surfaces of III–V semiconductors: A new type of chemical bond (1985) (14)
- DX centers in II-VI semiconductors and heterojunctions (1996) (14)
- Summary Abstract: Atomic geometries of the (110) surfaces of III–V compound semiconductors: Determination by total‐energy minimization and elastic low‐energy electron diffraction (1985) (13)
- ELECTRONIC STATES OF Si-SiO2 INTERFACES (1978) (12)
- Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations (1987) (11)
- Pressure dependence of the band structure of 2H-SnS2 (1978) (11)
- Amphoteric nature of vacancies in zinc blende semiconductors (2003) (10)
- Atomic Pseudopotentials and the Ionicity Parameter of Phillips and Van Vechten (1973) (10)
- Atomic structure of polar (111) surfaces of GaAs and ZnSe (1986) (10)
- Metastability of two-hydrogen complexes in silicon (2003) (9)
- Origins of (111) surface reconstructions of Si and Ge (1980) (9)
- ELECTRONIC STRUCTURES OF CRYSTALLINE AND AMORPHOUS SiO2 (1978) (9)
- TIGHT-BINDING CALCULATIONS OF (111) SURFACE DENSITIES OF STATES OF Ge AND GaAs (1975) (8)
- Angular momentum decomposition of k = 0 Bloch functions in group IV and zincblende crystals (1976) (8)
- Correlation between the static dielectric constant and the minimum energy gap (1974) (8)
- Unoccupied surface resonances on aluminum single crystal surfaces (1978) (7)
- Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory (1997) (7)
- Persistent photoconductivity and DX centers in Cd0.8Zn0.2Te:Cl (1995) (6)
- Pressure dependence of deep centers in II–VI semiconductors: Theory (1995) (5)
- Halogen impurities in silicon: Shallow single donors (1997) (5)
- Theoretical calculations for the dimer–adatom–stacking‐fault model of Si(111)‐7×7 surface (1987) (4)
- ELECTRONIC STRUCTURE OF Hg1-xCdxTe ALLOYS AMD CHARGE DENSITY CALCULATIONS USING REPRESENTIVE k-POINTS (1972) (4)
- Summary Abstract: (110) surface geometry of GaAs (1984) (4)
- Theoretical Study of the Structural and Electronic Properties ofGaSe Nanotubes (1998) (3)
- A MICROSCOPIC MODEL FOR THE Qss DEFECT AT THE Si/SiO2 INTERFACE (1980) (3)
- A new class of defects in highly n-doped silicon (2003) (3)
- Transferability of Tight-Binding Matrix Elements (1989) (3)
- Atomic structure ofDX centers: Theory (1991) (2)
- Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors (1992) (2)
- Analytic Expression for the Electronic Charge Density Distribution in Diamond‐Structure Crystals (1974) (2)
- Use of the cluster–Bethe‐lattice method in surface studies (1979) (2)
- Self-Compensation in P, As, and N Doped ZnSe (1993) (2)
- Erratum: Alternative form of the nonlocalppotential in the empirical pseudopotential method (1975) (1)
- Approximate Wannier functions (1973) (1)
- Erratum: Vacancy in Silicon Revisited: Structure and Pressure Effects [Phys. Rev. Lett. 81, 2088 (1998)] (1999) (1)
- Theoretical study of the atomic and electronic structure of the c-4x4 reconstructed GaAs(100) surface (1982) (1)
- Summary Abstract: Total‐energy study of the vacancy model for the GaAs(111) surface (1984) (1)
- A combinatorial method of generating periodic tetrahedral frameworks (1996) (1)
- Peculiar Doping Behavior of Si:Be. (1990) (0)
- Pseudopotential and Tight-Binding Calculations of the Bulk and Surface Electronic Structure of Solids. (1974) (0)
- Theory of impurity and defect induced instabilities. Discussion (1992) (0)
- Summary Abstract: Temperature dependence of surface state optical absorption (1986) (0)
- Ab initio study of the effect of uniaxial pressure on the ferroelectric properties of PbTiO3 (2001) (0)
- Erratum: Fermi-Level-Pinning Defects in Highlyn-Doped Silicon [Phys. Rev. Lett. 79, 4834 (1997)] (1998) (0)
- Atomic Arrangements and Electronic Properties of Semiconductor Surfaces and Interfaces. (1982) (0)
- REFLECTIVITY AND BAND STRUCTURES OF CdTe AND HgTe (1971) (0)
- Unusual Properties of Impurities and Defects: Challenges and Opportunities (1996) (0)
- Internal Surfaces: large lattice relaxations at impurity centers in bulk GaAs and AlGaAs alloys (1989) (0)
- Theory of DX Centers in Al x Ga 1-x Alloys (1989) (0)
- Microscopic origin of the shallow-deep transition of impurity levels in III-V and II-VI semiconductors (1991) (0)
- Crystalline Structure Around the Single Vacancy in Silicon: Formation Volume and Stress Effects (1998) (0)
- Theoretical study of the As(100) surface reconstruction of GaAs (1983) (0)
- Stable Diatomic-Hydrogen-Complex in Crystalline Silicon (1989) (0)
- "ELECTRON-HOLE" COUNTING APPROACH TO SURFACE ATOMIC STRUCTURE (1991) (0)
- Theory of impurity and defect induced instabilities (1992) (0)
- Analytic Expression for the Electronic Charge Density Distribution in Diamond-Structure Crystals (1974) (0)
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