David Charles Look

David Charles Look's AcademicInfluence.com Rankings

David Charles Look

Engineering

#2312

World Rank

#3201

Historical Rank

Materials Science

#66

World Rank

#67

Historical Rank

Applied Physics

#279

World Rank

#289

Historical Rank

Electrical Engineering

#401

World Rank

#449

Historical Rank

engineering Degrees

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Engineering

David Charles Look's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University

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David Charles Look's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Recent Advances in ZnO Materials and Devices (2001) (2483)
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy (2002) (1199)
Residual Native Shallow Donor in ZnO (1999) (1023)
Time Saving in Measurement of NMR and EPR Relaxation Times (1970) (800)
Electrical properties of bulk ZnO (1998) (756)
ZnO diode fabricated by excimer-laser doping (2000) (692)
P‐type doping and devices based on ZnO (2004) (509)
Valence-Band Ordering in ZnO (1999) (497)
Optically pumped ultraviolet lasing from ZnO (1996) (490)
Evidence for native-defect donors in n-type ZnO. (2005) (457)
The Future Of ZnO Light Emitters (2004) (457)
Synthesis of p-type ZnO films (2000) (445)
Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates (2003) (438)
Electrical Characterization of GaAs Materials and Devices (1989) (437)
Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals (1998) (430)
Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes (2003) (420)
Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO. (2003) (400)
Dislocation Scattering in GaN (1999) (391)
Defect Donor and Acceptor in GaN (1997) (362)
Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy (2000) (359)
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements (1997) (328)
Production and annealing of electron irradiation damage in ZnO (1999) (315)
Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN (1997) (303)
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire (1999) (301)
Electrical Characterization of 1.8 MeV Proton-Bombarded ZnO (2001) (291)
Introduction and recovery of point defects in electron-irradiated ZnO (2005) (289)
Nuclear Magnetic Dipole—Dipole Relaxation Along the Static and Rotating Magnetic Fields: Application to Gypsum (1966) (271)
Fine structure on the green band in ZnO (2001) (268)
As-doped p-type ZnO produced by an evaporation∕sputtering process (2004) (262)
Electrical and optical properties of p-type ZnO (2005) (241)
Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO (2005) (230)
Study of the Photoluminescence of Phosphorus-Doped p-Type ZnO Thin Films Grown by Radio-Frequency Magnetron Sputtering (2005) (223)
Production of nitrogen acceptors in ZnO by thermal annealing (2002) (192)
Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO (2003) (189)
Electrical Characterization of Vapor-Phase-Grown Single-Crystal ZnO (2002) (171)
Molecular beam epitaxial GaAs grown at low temperatures (1993) (160)
Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO (2011) (156)
Electron and hole conductivity in CuInS2 (1975) (148)
Dominant effect of near-interface native point defects on ZnO Schottky barriers (2007) (147)
Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO (2000) (146)
Progress in ZnO materials and devices (2006) (145)
Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO (1998) (144)
The Path To ZnO Devices: Donor and Acceptor Dynamics (2003) (142)
Electrical and optical properties of defects and impurities in ZnO (2003) (135)
Donor and acceptor concentrations in degenerate InN (2002) (131)
Remote hydrogen plasma doping of single crystal ZnO (2004) (129)
Deep centers in n-GaN grown by reactive molecular beam epitaxy (1998) (127)
Radiation Hardness of ZnO at Low Temperatures (2004) (127)
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL 2-like defect (1990) (124)
Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors (2009) (121)
Persistent n-type photoconductivity in p-type ZnO (2006) (115)
Persistent n-type photoconductivity in p-type ZnO (2006) (115)
The Electrical and Photoelectronic Properties of Semi-Insulating GaAs (1983) (113)
Effect of Hindered Molecular Rotation between Unequal Potential Wells upon Nuclear Magnetic Resonance Spin—Lattice Relaxation Times and Second Moments (1966) (113)
Magnetic resonance studies of ZnO (2001) (112)
Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals (2001) (109)
On the nitrogen vacancy in GaN (2003) (109)
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition (2017) (106)
Electron-Irradiation-Induced Deep Level in n -Type GaN (1998) (105)
Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy (2003) (104)
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy (2005) (103)
Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers (2010) (98)
Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy (1997) (94)
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy - eScholarship (2001) (93)
On the main irradiation-induced defect in GaN (2000) (92)
Identification of Donors, Acceptors, and Traps in Bulk-Like HVPE GaN (2005) (92)
Deep Centers in a Free-Standing GaN Layer (2001) (91)
Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation (2004) (87)
Nuclear Magnetic Resonance Study of Molecular Motions in Solid Hydrogen Sulfide (1966) (86)
Optical signatures of deep level defects in Ga2O3 (2018) (86)
Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory. (2013) (85)
Predicted maximum mobility in bulk GaN (2001) (85)
Mobility analysis of highly conducting thin films: Application to ZnO (2010) (83)
Deep‐center hopping conduction in GaN (1996) (82)
Plasma-Etching-Enhanced Deep Centers in n-GaN Grown by Metalorganic Chemical-Vapor Deposition (2003) (82)
Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy (1996) (81)
Effects of surface conduction on Hall-effect measurements in ZnO (2005) (80)
Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN (2000) (79)
Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy (2006) (76)
Remote hydrogen plasma processing of ZnO single crystal surfaces (2003) (73)
Accurate mobility and carrier concentration analysis for GaN (1997) (72)
Wet Chemical Digital Etching of GaAs at Room Temperature (1996) (71)
High spatial resolution thermal conductivity of bulk ZnO (0001) (2002) (71)
High-Quality, Melt-Grown ZnO Single Crystals (2004) (70)
Metal Modulation Epitaxy Growth for Extremely High Hole Concentrations Above 10(19) Cm(-3) in GaN (2008) (69)
Annealing dynamics of molecular-beam epitaxial GaAs grown at 200°C (1993) (67)
On compensation and conductivity models for molecular-beam-epitaxial GaAs grown at low temperature (1991) (63)
Zn- and O-face polarity effects at ZnO surfaces and metal interfaces (2008) (62)
Dislocation-Related Electron Capture Behaviour of Traps in N-Type GaN (2002) (62)
Thermally stimulated current trap in GaN (1996) (61)
Electron beam and optical depth profiling of quasibulk GaN (2000) (61)
Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN (2007) (60)
Origin of conductive surface layer in annealed ZnO (2008) (59)
Photoluminescence measurements from the two polar faces of ZnO (2000) (59)
Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN (2001) (59)
Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy (2008) (59)
Stable highly conductive ZnO via reduction of Zn vacancies (2012) (58)
Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band (1990) (57)
Comment on: Recombination of excitons bound to oxygen and silicon donors in freestanding GaN (2002) (56)
Polariton and Free-Exciton-Like Photoluminescence in ZnO (2001) (53)
Alloy scattering in p‐type AlxGa1−xAs (1992) (52)
The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO (2001) (51)
Model for thickness dependence of mobility and concentration in highly conductive zinc oxide (2013) (51)
Deep level characteristics in n-GaN with inductively coupled plasma damage (2008) (50)
Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C (1992) (50)
Nuclear Spin-Lattice Relaxation Measurements by Tone-Burst Modulation (1968) (49)
Ga-related photoluminescence lines in Ga-doped ZnO grown by plasma-assisted molecular-beam epitaxy (2009) (47)
Defect Models in Electron-Irradiated N-Type GaAs (1992) (47)
Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy (2002) (46)
Hydrogen incorporation, diffusivity and evolution in bulk ZnO (2003) (45)
Model for Fe 2+ Intracenter-Induced Photoconductivity in InP: Fe (1979) (45)
Hole Transport in Pure and Doped GaAs (1983) (45)
Statistics of Multicharge Centers in Semiconductors - Applications (1981) (45)
Quantitative analysis of surface donors in ZnO (2007) (45)
ZnO plasmonics for telecommunications (2013) (44)
Thermally driven defect formation and blocking layers at metal-ZnO interfaces (2007) (43)
Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy (2002) (43)
Semiconducting/Semi-Insulating Reversibility in Bulk GaAs (1986) (42)
Arsenic Antisite-Related Defects in Low-Temperature MBE Grown GaAs (1992) (42)
Radiative Recombination and Ultralong Exciton Photoluminescence Lifetime in GaN Freestanding Film Via Two-Photon Excitation (2006) (42)
Point Defect Characterization of GaN and ZnO (1999) (41)
Highly conductive ZnO grown by pulsed laser deposition in pure Ar (2010) (41)
Two-layer Hall-effect model with arbitrary surface-donor profiles : application to ZnO (2008) (41)
Defect segregation and optical emission in ZnO nano- and microwires. (2016) (40)
Identification of the G 5 and G 6 free excitons in GaN (2000) (40)
On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: Application to Fe-doped GaN (2016) (40)
The electrical characterization of semi‐insulating GaAs: A correlation with mass‐spectrographic analysis (1977) (40)
Electron Irradiation Induced Deep Centers in Hydrothermally Grown ZnO (2007) (39)
Optical properties of ZnO crystals containing internal strains (1999) (38)
Strain Variation with Sample Thicknes s in GaN Grown by Hydride Vapor Phase Epitaxy (2000) (36)
Characterization of near-surface traps in semiconductors: GaN (2001) (35)
Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes (2000) (35)
Comparison of deep centers in semi‐insulating liquid‐encapsulated Czochralski and vertical‐gradient freeze GaAs (1991) (35)
Defect-Related Donors, Acceptors, and Traps in GaN (2001) (35)
Mixed conduction in Cr-doped GaAs (1975) (34)
Growth of Thick InN by Molecular Beam Epitaxy (2002) (34)
Infrared Quenching and Thermal Recovery of Thermally Stimulated Current Spectra in GaAs (1991) (33)
Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates (2005) (32)
Semi-Insulating III-V Materials: Kah-Nee-Ta 1984 (1984) (32)
Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures (1994) (32)
Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy (2000) (32)
Defects at oxygen plasma cleaned ZnO polar surfaces (2010) (31)
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy (2001) (31)
Traps in semi‐insulating InP studied by thermally stimulated current spectroscopy (1992) (31)
Extremely High Hole Concentrations in C-Plane GaN (2009) (31)
Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally Stimulated Current Measurements (1997) (31)
Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire (2006) (30)
Irradiation‐induced defects in ZnO studied by positron annihilation spectroscopy (2004) (30)
Schottky-Barrier Profiling Techniques in Semiconductors - Gate Current and Parasitic Resistance Effects (1985) (30)
Electron and Hole Traps in N-Doped ZnO Grown on p-Type Si by Metalorganic Chemical Vapor Deposition (2007) (30)
On the interpretation of photoconductivity and photo-hall spectra in semi-insulating GaAs:Cr☆ (1977) (30)
Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy (2002) (30)
Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces (2008) (29)
Optimization of a Thermally Asymmetric Convective and Radiating Annular Fin (2007) (29)
Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition (2018) (29)
Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 °C (1993) (29)
High Quality Hydrothermal ZnO Crystals (1998) (28)
Characterization of deep centers in bulk n-type 4H–SiC (2001) (28)
Role of subsurface defects in metal-ZnO(0001¯) Schottky barrier formation (2007) (27)
Low-Frequency Noise in n-GaN with High Electron Mobility (1999) (27)
Positive Identification of the Cr(4+)-->Cr(3+) Thermal Transition in GaAs (1982) (27)
Theoretical and experimental capacitance‐voltage behavior of Al0.3Ga0.7As/GaAs modulation‐doped heterojunctions: Relation of conduction‐band discontinuity to donor energy (1985) (26)
Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals (2015) (26)
Electron Irradiation Defects in n -type GaAs (1980) (26)
Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy (2008) (26)
Growth and characteristics of AlGaN/GaN heterostructures on sp2-bonded BN by metal–organic chemical vapor deposition (2016) (25)
Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy (2002) (25)
Ga Vacancies in Electron Irradiated GaN: Introduction, Stability and Temperature Dependence of Positron Trapping (2001) (25)
Effects of annealing in N2 ambient on traps and persistent conduction in hydrothermally grown ZnO (2008) (24)
Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and its Impact on Schottky Barrier Formation (2009) (23)
Unusual Electrical Properties of Hydrothermally Grown ZnO (2007) (23)
Defect production in electron‐irradiated, n‐type GaAs (1987) (23)
Defect Studies in Electron-Irradiated ZnO and GaN (2007) (23)
Electrical transport properties of III-nitrides (1997) (23)
Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies (2016) (22)
Interplay of native point defects with ZnO Schottky barriers and doping (2012) (22)
Process dependence of H passivation and doping in H-implanted ZnO (2013) (22)
High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy (1998) (22)
Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors (1993) (22)
Identification of an ionized-donor-bound-exciton transition in GaN (1997) (22)
Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2 (1999) (22)
Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes (2009) (21)
GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates (2017) (21)
On Hall Scattering Factors for Holes in GaAs (1996) (21)
A two-layer magneto-TLM contact resistance model: application to modulation-doped FET structures (1988) (21)
Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs (1992) (21)
A Study of the 0.1-EV Conversion Acceptor in GaAs (1983) (20)
Electrical and optical properties of GaN/Al2O3 interfaces (2002) (20)
Photoexcited carrier trapping and recombination at Fe centers in GaN (2016) (20)
Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors (2007) (20)
Photoluminescence in electrically reversible (semiconducting to semi‐insulating) bulk GaAs (1987) (20)
High mobility in n-type GaN substrates (2001) (20)
Defect Nature of the 0.4-Ev Center in O-Doped GaAs (1983) (20)
A dominant electrical defect in GaAs (1982) (20)
DEPLETION WIDTH AND CAPACITANCE TRANSIENT FORMULAS FOR DEEP TRAPS OF HIGH CONCENTRATION (1995) (19)
Microcathodoluminescence of Impurity Doping at Gallium Nitride/Sapphire Interfaces (2001) (19)
Strain splitting of the G 5 and G 6 free excitons in ZnO (1999) (19)
Classical Magnetoresistance Measurements in AlxGa1-Xas/GaAs MODFET Structures - Determination of Mobilities (1986) (18)
Hopping Conduction in Molecular Beam Epitaxial GaAs Grown at Very Low Temperatures (1994) (18)
Resonant interaction of LO phonons with excited donor states in GaN (2003) (18)
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy (1998) (18)
Oxide-based Materials and Devices II (2010) (18)
Direct observation of conduction band plasmons and the related Burstein-Moss shift in highly doped semiconductors: A STEM-EELS study of Ga-doped ZnO (2018) (18)
Native Point Defects at ZnO Surfaces, Interfaces and Bulk Films (2012) (17)
Electrical properties of molecular beam epitaxial GaAs grown at 300–450°C (1993) (17)
Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer (1990) (17)
Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures (1993) (16)
Large Scale Laser Crystallization of Solution-based Alumina-doped Zinc Oxide (AZO) Nanoinks for Highly Transparent Conductive Electrode (2015) (16)
Magneto‐Hall characterization of delta‐doped pseudomorphic high electron mobility transistor structures (1994) (16)
Polarity-related asymetry at ZnO surfaces and metal interfaces (2009) (16)
Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques (2019) (16)
Review of Hall Effect and Magnetoresistance Measurements in GaAs Materials and Devices (1990) (16)
Application of highly conductive ZnO to the excitation of long-range plasmons in symmetric hybrid waveguides (2013) (16)
Semi-insulating Nature of Gas Source Molecular Beam Epitaxial InGaP Grown at Very Low Temperatures (1993) (16)
Deep centers in undoped semi-insulating InP (1998) (16)
Type Conversion in Electron-Irradiated GaAs (1979) (16)
Modification of surface characteristics in GaAs with dry processing (1985) (15)
Making highly conductive ZnO: creating donors and destroying acceptors (2012) (15)
Shifted x‐ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 °C (1992) (15)
Surface and interface free‐carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge (1990) (15)
GaN and related alloys—2001 (2002) (15)
Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN (2002) (15)
Gallium and nitrogen vacancies in GaN: Impurity decoration effects (2006) (15)
Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates (2018) (15)
Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces (2009) (15)
Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs (1996) (14)
Mid- to long-wavelength infrared surface plasmon properties in doped zinc oxides (2012) (14)
Prominent Thermally Stimulated Current Trap in Low-Temperature-Grown Molecular-Beam Epitaxial GaAs (1993) (14)
Low compensation vapor phase epitaxial gallium arsenide (1983) (14)
Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation (2006) (14)
Measurement of Electron Spin‐Lattice Relaxation Times using Ordinary EPR Spectrometers (1968) (14)
Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 (2021) (13)
Wet Chemical Digital Etching of GaAs at Room Temperature. (2010) (13)
Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC (2004) (13)
Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient (2008) (13)
High acceptor production rate in electron-irradiated n-type GaAs: Impact on defect models (1987) (13)
Electrical Properties of Unintentionally Doped Semi-Insulating and Conducting 6H-SiC (2006) (13)
Deep centers in semi‐insulating Fe‐doped native GaN substrates grown by hydride vapour phase epitaxy (2008) (13)
P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (2005) (13)
Resonance photoconductivity in Fe-doped InP (1980) (13)
Electrical Characterization of Semiconductors (1999) (13)
Native Point Defect Measurement and Manipulation in ZnO Nanostructures (2019) (13)
Effects of Ar Vs. O2 Ambient On Pulsed-Laser-Deposited Ga-Doped ZnO (2011) (13)
Electrical Properties of Boron-Doped P-SiGeC Grown on N(-)-Si Substrate (2000) (13)
On the energy level of EL2 in GaAs (1999) (13)
Defects in highly conductive ZnO for transparent electrodes and plasmonics (2014) (13)
Vacancy defect distributions in bulk ZnO crystals (2007) (12)
Spin Splitting of Donor-Bound Excitons in ZnO Due To Combined Stress and Spin Exchange (1997) (12)
Mobility vs thickness in n+-ZnO films: Effects of substrates and buffer layers (2017) (12)
Significant mobility enhancement in extremely thin highly doped ZnO films (2015) (12)
Photoquenching and thermal recovery of a thermally stimulated current peak in semi‐insulating GaAs (1993) (12)
Equivalence of donor and acceptor fits of temperature‐dependent carrier‐concentration data (1987) (12)
Thermally Stimulated Current Spectroscopy and Photoluminescence of Carbon-Doped Semi-Insulating GaN Grown by Ammonia-Based Molecular Beam Epitaxy (2005) (12)
Doping and Defects in ZnO (2006) (12)
Anomalies in annealed LT-GaAs samples (1993) (12)
Nuclear-Magnetic-Resonance Studies of the Semiconductor-to-Metal Transition in Chlorine- Doped Cadmium Sulfide (1971) (12)
Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy (1992) (12)
Impurity Photomagnetoelectric Effect: Application to Semi-Insulating GaAs (1977) (12)
Shallow donor generation in ZnO by remote hydrogen plasma (2005) (11)
Mobility measurements with a standard contact resistance pattern (1987) (11)
Improved photoluminescence of vertically aligned ZnO nanorods grown on BaSrTiO3 by pulsed laser deposition (2009) (11)
Hall-Effect Measurements in Cd-Implanted GaAs (1976) (11)
Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x (1995) (11)
Magnetoresistance Method To Determine GaAs and Alxga1-Xas Mobilities in Alxga1-Xas/GaAs Modulation-Doped Field-Effect Transistor Structures (1985) (11)
High conductance in ultrathin films of ZnO (2014) (11)
Convenient determination of concentration and energy in deep‐level transient spectroscopy (1995) (11)
Hall Effect in Semiconductors (2002) (11)
Low temperature deposition of zinc oxide nanoparticles via zinc-rich vapor phase transport and condensation (2010) (11)
Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H (2011) (11)
Properties of CdZnO/ZnO Heterostructures for UV Light Emitters (2006) (10)
Effect of multistep wafer‐annealing on main traps in Czochralski‐grown semi‐insulating GaAs (1996) (10)
Pulsed NMR by Tone‐Burst Generation (1969) (10)
Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy (2000) (10)
Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers (2017) (10)
Automated, high resistivity Hall effect and photoelectronic apparatus (1981) (10)
Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga (2014) (10)
Nuclear magnetic resonance chemical shifts in CdS, CdSe, and CdTe (1972) (10)
Deviations from Bulk Transport Measurements in Semi-Insulating GaAs (1989) (10)
Wafer-level correlations of EL2, dislocation density, and FET saturation current at various processing stages (1989) (10)
the Donor Nature of the Main Electron Traps in Electron-Irradiated N-Type GaAs (1987) (10)
Characterization of multiple carriers in GaN using variable magnetic-field hall measurements (2004) (9)
UV light-induced changes to the surface conduction in hydrothermal ZnO (2009) (9)
Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition (2011) (9)
Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy (2002) (9)
On the characterization of semi-insulating gaas by hall, photo-hall, photoconductivity, and photomagnetoelectric measurements (1978) (9)
Model-free determination of optical constants: application to undoped and Ga-doped ZnO (2017) (9)
Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films (2015) (9)
Electrical-Properties of Low-Compensation GaAs (1983) (9)
Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition (1994) (9)
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (9)
Study of Trapping Phenomena in SrTiO3 by Thermally Stimulated Techniques (2017) (9)
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy (2001) (9)
Nuclear-Magnetic-Resonance Measurement of the Conduction-Electron g Factor in CdTe (1972) (9)
Excess dark current due to saw damage in semi-insulating GaAs (1993) (9)
Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C (1992) (9)
Reversible electrical properties of LEC GaAs (1987) (9)
Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material (1994) (9)
Electrical Transport Properties in Zinc Oxide (2011) (9)
True Mobilities in Semi-Insulating O- and Cr-Doped GaAs (1980) (9)
Thermal diffusion of lithium acceptors into ZnO crystals (2003) (8)
Electron Irradiation Induced Trap In N-Type Gan (1997) (8)
Phonon replicas associated with donor–bound–excitons in GaN (1998) (8)
Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs (1997) (8)
Donors and Acceptors in Bulk ZnO Grown by the Hydrothermal, Vapor-Phase, and Melt Processes (2006) (8)
Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition (2016) (8)
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy (1999) (8)
Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing (2006) (8)
Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects (2020) (8)
The Effect of Si Doping on the Electrical Properties of B12As2 Thin Films on (0001) 6H-SiC Substrates (2007) (8)
Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization (1992) (8)
Metal Contacts on Bulk ZnO Crystal Treated with Remote Oxygen Plasma (2009) (8)
Photoelectrochemical Capacitance-Voltage Measurements in GaN (1998) (7)
Properties of bulk scandium nitride crystals grown by physical vapor transport (2020) (7)
Magnetotransport properties of high quality Co:ZnO and Mn:ZnO single crystal pulsed laser deposition films: pitfalls associated with magnetotransport on high resistivity materials. (2010) (7)
Properties of Semi‐insulating GaAs:Fe Grown by Hydride Vapor Phase Epitaxy (2000) (7)
Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location (2011) (7)
Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC (2007) (7)
Defects Relevant for Compensation in Semi-Insulating GaAs (1993) (7)
Electrical, optical, and analytical characterization of bulk hydrothermal ZnO crystals doped with indium (2011) (7)
The type-conversion phenomenon in electron-irradiated GaAs (1988) (7)
Magneto-Hall and Magnetoresistance Coefficients in Semiconductors with Mixed Conductivity (1982) (7)
Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs (1995) (7)
Schottky-barrier mobility profiling measurements with gate-current corrections (1985) (7)
Uniformity of 3-In, Semi-Insulating, Vertical-Gradient-Freeze GaAs Wafers (1989) (7)
Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs (1995) (7)
Al 1-x Sc x N Thin Film Structures for Pyroelectric Sensing Applications (2016) (7)
Structural and electronic properties of Ga 2 O 3-Al 2 O 3 alloys (2018) (7)
Metalorganic chemical vapor deposition and characterization of ZnO materials (2006) (7)
Interfacial properties of Ga-doped ZnO thin films on Si (2014) (7)
NMR Determination of the Conduction-Electron Hyperfine Interaction in Crystalline CdO (1969) (7)
Effects of a buffer layer on free-carrier depletion in n-type GaAs (1991) (6)
Nuclear Magnetic Resonance Investigation of the Metal-to-Semiconductor Transition in Crystalline CdO (1970) (6)
Application of highly conductive ZnO to plasmonics (2013) (6)
Classical and quantum conductivity in β-Ga2O3 (2019) (6)
Characterization of deep centers in undoped semi-insulating GaAs substrates by normalized thermally stimulated current spectroscopy: Comparison of 100 and 150 mm wafers (1998) (6)
Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate (2004) (6)
Model-free determination of optical constants: application to undoped and Ga-doped ZnO (2017) (6)
Donor and acceptor concentrations from a single mobility measurement in degenerate semiconductors: ZnO (2011) (6)
Characterization of MBE GaAs Layers Grown at 200°C–300°C (1990) (6)
Hall‐effect depletion corrections in ion‐implanted samples: Si29 in GaAs (1989) (6)
High-Temperature Annealing in Electron- Irradiated CdS (1974) (6)
Evidence for Shallow Acceptors in GaN (2001) (5)
Special Issue on Low-Temperature Grown GaAs and Related Materials - Foreword (1993) (5)
Automation of a Popular Monochromator (1980) (5)
Low-Energy Electron-Excited Nanoluminescence Studies of GaN and Related Materials (2002) (5)
Room Temperature Electron Damage in CdS (1974) (5)
Model for thickness dependence of mobility and concentration in highly conductive ZnO (2013) (5)
Effect of High-Temperature Annealing on Electrical and Optical Properties of Undoped Semi-Insulating GaAs (1998) (5)
Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAs (1991) (5)
The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer (1995) (5)
High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy (1993) (5)
Thermal annealing effect on spin coherence in ZnO single crystals (2011) (5)
Incorporation of Silicon and Aluminum in Low-Temperature Molecular-Beam Epitaxial GaAs (1992) (5)
Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs (1997) (5)
Magnetopolaron Effect on Shallow Donors in GaN (2006) (5)
Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996) (5)
Low Frequency Noise in n-GaN with High Electron Mobility (2000) (5)
Electrical and optical properties of degenerate and semi-insulating ZnGa2O4: Electron/phonon scattering elucidated by quantum magnetoconductivity (2020) (5)
Fourier Transform Infrared Spectroscopy Measurements of Multi-phonon and Free-Carrier Absorption in ZnO (2016) (4)
Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions (2016) (4)
Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique (1988) (4)
Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals (2012) (4)
Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals (2013) (4)
Below band gap photoreflectance transitions in epitaxial GaN (2004) (4)
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition (2018) (4)
Optical/electrical correlations in ZnO: The plasmonic resonance phase diagram (2013) (4)
Role of native point defects and Ga diffusion on electrical properties of degenerate Ga‐doped ZnO (2013) (4)
Bulk and contact electrical properties by the magneto-transmission-line method: Application to GaAs (1987) (4)
Electronic defect states observed by cathodoluminescence spectroscopy at GaN/sapphire interfaces (2001) (4)
Optoelectronic performance enhancement in pulsed laser deposited gallium-doped zinc oxide (GZO) films after UV laser crystallization (2018) (4)
An experimental set-up for in situ Hall measurements under high-energy electron irradiation for wide-bandgap materials (2004) (4)
Front Matter: Volume 8263 (2012) (4)
Electrical Profiles in GaN/Al 2 O 3 Layers with Conductive Interface Regions (2001) (4)
Long-wavelength infrared surface plasmons on Ga-doped ZnO films excited via 2D hole arrays for extraordinary optical transmission (2013) (4)
Optical and electrical properties of Ti-doped β-Ga2O3 (Ti3+:β-Ga2O3) bulk crystals grown by floating zone method (2020) (4)
Near-infrared (1 to 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO (2017) (4)
A new technique for whole‐wafer etch‐pit density mapping in GaAs (1989) (4)
Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps (1992) (4)
Development of ZnMgCdO-based alloys and heterostructures for optical applications (2006) (3)
Thermoelectric effect spectroscopy measurements on semi-insulating GaN (2003) (3)
Photo-Hall-effect study of excitation and recombination in Fe-doped GaN (2017) (3)
Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy (2003) (3)
Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals (2021) (3)
X-ray double-crystal diffractometry characterization of semi-insulating GaAs (1990) (3)
Dopant profiles in heavily doped ZnO (2013) (3)
Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy (2018) (3)
Optical measurements and mapping in Ga‐ and Al‐doped ZnO and Sn‐doped In2O3 (2015) (3)
Sharp line emission spectra from GaAs FET like structures (1978) (3)
In-implanted ZnO: Controlled degenerate surface layer (2009) (3)
In Situ Hall-Effect System for Real-Time Electron-Irradiation Studies (1990) (3)
Electrical Characteristics of Al‐Implanted ZnSe (1974) (3)
PHONON REPLICAS IN THE PHOTOLUMINESCENCE EMISSION OF ALXGA1-XAS ALLOYS (1995) (3)
Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies (1996) (3)
Automated and calibrated whole wafer etch pit density measurements in GaAs (1989) (3)
Properties of ZnO (2001) (3)
Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors (1997) (3)
Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy (1999) (3)
Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN (2006) (3)
ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters (2005) (3)
Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers (1996) (3)
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices (2018) (3)
An Anomalous Deep Center (E C -0.31 eV) in Semi-Insulating GaAs (1996) (3)
Equivalence of Donor and Acceptor Fits To Temperature-Dependent Hall Data: General Case (1987) (3)
Enhanced p-type conductivity of nitrogen doped ZnO by nano/micro structured rods and Zn-rich Co-doping process (2011) (3)
Micro-Auger Electron Spectroscopy Studies of Chemical and Electronic Effects at GaN-Sapphire Interfaces (2004) (3)
Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces (2002) (3)
Giant traps associated with extended defects in GaN and SiC (2005) (3)
Effect of the velocity-field peak on I–V characteristics of GaAs FET's (1983) (3)
Optical Transmittance and Reflectance of Lanthanum Nickelate at Telecommunication Frequencies (2018) (2)
Luminescence Properties of Charged Dislocations in Semi‐Insulating GaN : Zn (2003) (2)
Defects in Low—Temperature—Grown MBE GaAs (1993) (2)
Growth and properties of n- and p-type ZnO (2003) (2)
Summary Abstract: Capacitance-Voltage Characteristics in Modulation Doped Heterojunction FETs (1985) (2)
Deep centers in conductive and semi-insulating GaN (2005) (2)
High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy (2002) (2)
Properties of Aℓ and P Ion-Implanted Layers in ZnSe (1975) (2)
Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures (1995) (2)
Simple ohmic contact formation in HEMT structures: application to AlGaN/GaN (2019) (2)
Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy (1991) (2)
High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence (1997) (2)
Development of ZnO films for near-IR plasmonics (2014) (2)
Study And Characterization Of Low-Pressure AsH3 Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy (1987) (2)
Front Matter: Volume 8987 (2014) (2)
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy (2006) (2)
Dynamics of ground and excited states of bound excitons in gallium nitride (2005) (2)
Characterization of GaN (1998) (2)
Coupling of phonons with excitons bound to different donors and acceptors in hexagonal GaN (2006) (2)
Electrical and optical properties of ZnO bulk crystals with and without lithium grown by the hydrothermal technique (2014) (2)
Mid-infrared extraordinary transmission through Ga-doped ZnO films with 2D hole arrays (2014) (2)
Electrical Properties of ZnO (2005) (2)
Traps in semi-insulating InP studied by thermally stimulated current spectroscopy (1992) (2)
Ground and excited states associated with donor bound-excitons in high purity GaAs (1996) (2)
Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)] (2003) (2)
Electrical and Optical Properties of n-Type and p-Type ZnO (2004) (2)
Characteristics of Deep Traps in Freestanding GaN (2001) (2)
Influence of nitride buffer layers on superconducting properties of niobium nitride (2018) (2)
Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs‐GaAs quantum wells (1994) (2)
ZnO/AlGaN Ultraviolet Light Emitting Diodes (2003) (2)
Influence of Point Defects on GaAs Devices (1990) (1)
Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (1)
Photoresistivity and Photo-Hall-Effect Topography on Semi-insulating GaAs Wafers (1987) (1)
Electron–phonon coupling and electron mobility in degenerately doped oxides from first-principles (2020) (1)
Conduction electron hyperfine interaction in semiconducting CdS (1970) (1)
Transparent Conducting Oxides for Infrared Plasmonic Waveguides: ZnO (Preprint) (2014) (1)
Electron-Beam Modification of GaAs Surface-Potential - Measurement of Richardson Constant (1993) (1)
Deep Level Transient Spectroscopy (2003) (1)
Effect of substrate on radiative properties of thin films. (1973) (1)
Comparison of OMVPE and MBE Grown AlGaAs/InGaAs PHEMT Structures (1996) (1)
On‐wafer Hall‐effect measurement system (1991) (1)
Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO (2017) (1)
High Electron Mobility in Free-Standing GaN Substrates (2000) (1)
Electrical Properties of Porous SiC (2008) (1)
ZnO-based metal-insulator-semiconductor UV light-emitting diodes prepared by ion implantation (2003) (1)
Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy (2011) (1)
Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs (1996) (1)
Identification of the Gamma5 and Gamma6 free excitons in GaN (2000) (1)
Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures (1992) (1)
Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations (2007) (1)
Infrared Spectral Detectivity of Cr-doped GaAs (1978) (1)
Ohmic Contacts to Al‐Implanted ZnSe (1975) (1)
Low-Temperature Grown Semi-Insulating GaAs Layer: Defect Concentration from Lattice Constant and Resistivity (1990) (1)
Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO (2014) (1)
Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers (2006) (1)
Electrical Measurements in GaN: Point Defects and Dislocations (1999) (1)
A study of the transition from high to low resistivity in As-grown GaAs MBE material (1995) (1)
Overview of MIMIC Phase I Material/Device Correlation Study (1991) (1)
P-type Nitrogen Doped ZnO Films Grown By Thermal Evaporation (2009) (1)
Screening of Excitons in GaN Crystals (1998) (1)
International Workshop on ZnO (2001) (1)
Deep level defects and their instability in PLD-grown IGZO (In2Ga2Zn5O11) thin films studied by thermally stimulated current spectroscopy (2020) (1)
Spark Source Mass Spectrographic Analysis of Gallium Arsenide for Trace Oxygen and Carbon Using Liquid Helium Cryopumping (1983) (1)
Summary Abstract - Theoretical and experimental capacitance-voltage behavior of modulation-doped Al(0.3)Ga(0.7)As/GaAs heterojunctions (1986) (1)
Point Defects in LT GaAs (1996) (1)
Erratum: Neutral-donor-bound-exciton complexes in ZnO crystals [Phys. Rev. B 57, 12 151 (1998)] (1998) (1)
Thermal Cycling of Electrical Properties in GaAs (1986) (1)
Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process (1990) (1)
Determination of Defect Pair Orientation in ZnO (1999) (1)
Identification of the 0.15 eV Donor Defect in Bulk GaAs (1993) (1)
Gallium-doped zinc oxide plasmonic nanostructures for mid-IR applications (Conference Presentation) (2016) (1)
Abstract of articles to be published in the Journal of Physics and Chemistry of SolidsElectron and hole conductivity in CuInS2 (1975) (0)
Temperature Dependence of the Nuclear Spin-Lattice Relaxation in CdS Crystals (1967) (0)
Observations on the State of the GaAs Processing Technology (1987) (0)
Characterization of Epitaxial ZnO Films Grown Using Magnetron Sputtering (2009) (0)
Deep Level Transient Spectroscopy Study of Defects and Impurities in GaN and Related III-N Materials (2003) (0)
Microcathodoluminescence characterization of III-V nitride heterojunctions and devices (2003) (0)
Defect Chemistry Study of Nitrogen Doped ZnO Thin Films. Final report (2009) (0)
Infrared spectral detectivity of Cr-doped GaAsa ) (2015) (0)
Characterization of III-V Semiconductors. (1989) (0)
Choice The future of ZnO light emitters (2004) (0)
Present Status of ZnO Materials and Devices (2007) (0)
The Status of p-type ZnO (2005) (0)
MAGNETOPOLARON EFFECT ON SILICON AND OXYGEN DONORS IN GAN (2007) (0)
Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique (2018) (0)
Resistivity and hall-effect topography on photoexcited semi-insulating GaAs (1988) (0)
Electrical Characterization of Ion Implantation into GaAs (1987) (0)
A Detailed SI GaAs Substrate Study: Conversion and MESFET Properties (1982) (0)
A Comparison of Deep Centers in Low Temperature MBE, As-Rich LEC, and Ga-Rich LEC GaAs (1990) (0)
Improved Thermally Stimulated Current Analysis in Semi-insulating GaAs: New Conclusions (1996) (0)
International Workshop on Zinc Oxide (2nd) (2003) (0)
Crystal field splitting of defect pair spectra in GaAs (1997) (0)
Mechanisms for GaAs Surface Passivation by a Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C (2013) (0)
Diamagnetic Shifts of Excitons Associated with Symmetrical and Antisymmetric Wave Functions in Coupled InxGa 1-xAs-GaAs Quantum (2017) (0)
Formation of 2DEG at the interface of unconventional oxide hetero-structures by atomic layer deposition. (2017) (0)
Shallow Acceptors in GaAs Grown from the Vapour Phase (1997) (0)
Nuclear-Magnetic-Resonance Study of Co2+ in CdS (2015) (0)
Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs (1991) (0)
GaAs Whole-Wafer Dislocation Mapping for Qualifying Substrates (1990) (0)
Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures (2003) (0)
Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica (2021) (0)
Electrochemical Capacitance-Voltage, Magneto-Hall, and Theoretical Analysis of Heterostructure Transistor Material (1996) (0)
Compound Semiconductor Characterization. (1984) (0)
Photoluminescence of m‐plane GaN grown on m‐plane sapphire by MOCVD (2014) (0)
Electron mobility from phonon scattering in degenerate semiconductors: ZnO, [beta]-Ga2O3, and ZnGa2O4 (Conference Presentation) (2020) (0)
Hole Mobility in Doped and Implanted GaAs (1986) (0)
Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C (2014) (0)
Front Matter: Volume 8626 (2013) (0)
Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates (1995) (0)
Electrical and optical properties of as-grown and electron-irradiated ZnO (1998) (0)
Nondestructive mapping of carrier concentration and dislocation density in n+‐type GaAs (1994) (0)
Point Defect Characterization in III-V Semiconducting Compounds (1991) (0)
Infrared Transmission Topography: Application to Nondestructive Measurement of Dislocation Density and Carrier Concentration in Si-Doped GaAs Wafers (1996) (0)
Wafer Level Mapping of GaAs for MMIC Fabrication (1991) (0)
Classical and quantum conductivity in β-Ga2O3 (2019) (0)
Doping and Compensation in Wide-Band-Gap Oxides (2018) (0)
Electron and Hole Traps in N-Doped ZnO Grown on p-Type Si Substrate by MOCVD (2013) (0)
Electron-phonon coupling and electron mobility in degenerately doped oxides from first-principles (Conference Presentation) (2020) (0)
Monte-Carlo Simulation of Bulk Hole Transport in Alxga 1-Xas , in 1-Xalxas , and GaAsxsb 1X (2017) (0)
a Study of the Molecular Motions in Solid Hydrogen Sulfide Using a New Technique of Magnetic Resonance. (1965) (0)
Depth Measurement of Doped Semiconductors Using the Hall Technique (1997) (0)
Identification and Thermal Stability of Ga Vacancies in Electron-Irradiated Mg-Doped GaN Bulk Crystals (2001) (0)
Transport properties of V1-xWxO2 around the metal insulator transition temperature (2023) (0)
Errata: Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process (1991) (0)
Functional Epitaxial Oxide Devices (2010) (0)
Comparison of Deep Centers in Semi-Insulating GaAs Grown by HP-LEC, LP-LEC, and VGF Using Thermally Stimulated Current Spectroscopy (1994) (0)
GaN and Related Alloys - 2001: Volume 693 (2002) (0)
Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique (1998) (0)
Using small low-temperature quantum effects to calculate 300-K mobility in complex degenerate semiconductors: Ga2O3 (Conference Presentation) (2019) (0)
Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z) (2017) (0)
TEMPERATURE DEPENDENCE OF NUCLEAR SPIN--LATTICE RELAXATION IN SINGLE- CRYSTAL CADMIUM SULFIDE. (1968) (0)
Nuclear-Magnetic-Resonance Study of Co 2+ in CdS (1972) (0)
Magneto-Electric Characterization of Materials and Devices (1988) (0)
Optimizing plasmonic resonance properties in the near-IR (2017) (0)
Identification of defects in compound semiconductors. Final report 1 Jul 1971--31 Mar 1976 (1976) (0)
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates (2006) (0)
Identification of Defects in Compound Semiconductors. (1976) (0)
Mobility and Parasitic Resistance Measurements in AlGaAs/GaAs and AlGaAs/InGaAs MODFET Structures (1987) (0)
Characterization of material device structures. Final report, January 1984-September 1986 (1987) (0)
CdZnO/ZnO Heterostructures for UV-Visible Light Emitters (2006) (0)
Errata: Model for thickness dependence of mobility and concentration in highly conductive zinc oxide (2017) (0)
Radiative recombination and nanosecond exciton lifetime in GaN Freestanding film via two-photon excitation (2006) (0)
Incorporation of Si and Al in Low Temperature MBE GaAs (1992) (0)
Surface Photovoltage Spectroscopy and transients of Single Crystal ZnO (0001) (2002) (0)
The Effect of Mobility Profiles on Implanted GaAs MESFET Performance (1984) (0)
First-principles modeling of native point defects in zinc gallate (Conference Presentation) (2020) (0)
Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C (2013) (0)
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (0)
Depth measuremen t of doped semiconductor s usin g the Hall technique (2017) (0)
Diffusion of ion implanted indium in ZnO crystals (2011) (0)
Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C (2013) (0)
Effects of point defects and dislocations on transport properties of GaN (1999) (0)
Limits of Conductivity in ZnO Thin Films: Experiment and Theory (2011) (0)
Study on the growth of ZnO micro and nano-structures at low temperature and atmospheric pressure (2007) (0)
Novel Ga/AsCl3/H2 Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs (1982) (0)
Strain-Induced Splitting of Donor-Bound-Excitons in ZnO due to Exchange Interaction (1997) (0)
Determination of Concentration and Energy in Deep-Level Transient Spectroscopy (2017) (0)
Photoconductivity in Semi-Insulating GaAs (1986) (0)
Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C (2013) (0)
Observation of Deep Defects in As-Rich GaAs Grown by the Molecular Beam Epitaxy Technique at 200 °C (1990) (0)
Publisher's Note: “Significant mobility enhancement in extremely thin highly doped ZnO films” [Appl. Phys. Lett. 106, 152102 (2015)] (2015) (0)
OHMIC CONTACTS TO AL-IMPLANTED ZNSE (1975) (0)
Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN (2002) (0)
Origin and Behavior of Main Electron Traps in Si-Implanted GaAs (1990) (0)
Optoelectronic performance enhancement in pulsed laser deposited gallium-doped zinc oxide (GZO) films after UV laser crystallization (2018) (0)
Measurement and Mapping of Materials Parameters for Gallium Arsenide Wafers by Infrared Transmission Topography (1996) (0)
Characterization and Analysis of pHEMT Devices (1996) (0)
ZnO-Based MIS Diodes Prepared by Ion Implantation (2003) (0)
The Look-Locker Method in Magnetic Resonance Imaging: A Brief, Personal History (2014) (0)
Hole Mobility in Undoped GaAs (1986) (0)
Title : Self-compensation in semiconductors : The Zn vacancy in Ga-doped ZnO Year : 2011 Version : Final (2015) (0)
Radiative Recombination and Ultra‐long Exciton Photoluminescence Lifetime in GaN Freestanding Film via Two‐photon Excitation (2007) (0)
The Many Facets of ZnO: Sunscreen, Electronics Plasmonics (2014) (0)
Experimental and Theoretical Pursuit of the Ultimate Conductivity in ZnO (2014) (0)
Unpinning of GaAs Surface Fermi Level by 200 Degrees C Molecular Beam Epitaxial Layer (2013) (0)
Impact of Surface Morphology and Polarity on ZnO Optical Emission (2008) (0)
Layer Thickness Dependence of Strain in GaN grown by HVPE (2001) (0)
Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy (2000) (0)
Vapor-Phase Growth of High-Quality ZnO Micro- and Nano-Structures (2007) (0)
Debye tail mobility enhancement in ZnO:Ga/ZnO structures (2016) (0)
Interface quality informed by quantum-based magnetoconductivity: ITO on fused silica (2021) (0)
Low Temperature Grown and Highly Non-Stoichiometric GaAs and Related Materials (1994) (0)
Comparing Magnetron Sputtered ScN Films Grown on Sapphire ((10-10) and (1-102)) Substrates (2020) (0)
Carrier Concentrations of Semi-Insulating GaAs (1996) (0)
DLTS Defects in Low-Temperature-Grown MBE GaAs (1994) (0)
Theoretical Hole Mobility Curves (1996) (0)
Characterization of Material Device Structures. (1987) (0)
Annealing and Thermal Cycling Effects in Semi-Insulating GaAs (1988) (0)
Front Matter: Volume 7603 (2010) (0)
Effects of Annealing on Donor and Acceptor Concentrations in Ga-Doped ZnO Thin Films (2009) (0)
Characterization of Low-Temperature-Grown Molecular-Beam-Epitaxial GaAs (1996) (0)
Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (0)
Electronic, thermal, and structural properties of zinc gallate from first-principles calculations (2021) (0)
Electrical Transport in Wurtzite and Zincblende GaN (1999) (0)
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy (1999) (0)
Identification and Elimination of Defects and Impurities in GaN (2001) (0)
P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (2005) (0)
Radiative recombination and ultra-long photoluminescence lifetime in GaN freestanding film via two-photon excitation (2006) (0)
VA-2 magnetoresistance techniques for determining mobility profiles in GaAs MESFET and AlxGa1-xAs/GaAs MODFET devices (1985) (0)
Hole Mobility, Diffusion, and Lifetime (1990) (0)
GaAs MMIC wafer level mapping for material and process diagnostics (1991) (0)
Annealing studies on GaN hydride vapor phase epitaxial layers (1999) (0)
GaAs Materials/Device Correlation (1987) (0)

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