David E. Aspnes
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Most Influential Person Now
American physicist
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Physics
David E. Aspnes's Degrees
- PhD Physics University of Pennsylvania
Why Is David E. Aspnes Influential?
(Suggest an Edit or Addition)According to Wikipedia, David Erik Aspnes is an American physicist and a member of the National Academy of Sciences . Aspnes developed fundamental theories of the linear and nonlinear optical properties of materials and thin films, and the technology of spectroscopic ellipsometry . SE is a metrology that is indispensable in the manufacture of integrated circuits.
David E. Aspnes's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV (1983) (2964)
- Optical properties of thin films (1982) (1301)
- Static Phenomena Near Critical Points: Theory and Experiment (1967) (1104)
- Third-derivative modulation spectroscopy with low-field electroreflectance (1973) (1015)
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry (1979) (885)
- Optical properties of AlxGa1−x As (1986) (713)
- Differential reflection spectroscopy of very thin surface films (1971) (687)
- Local‐field effects and effective‐medium theory: A microscopic perspective (1982) (649)
- High precision scanning ellipsometer. (1975) (503)
- Schottky-Barrier Electroreflectance: Application to GaAs (1973) (442)
- Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs (1988) (414)
- Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation (1984) (356)
- GaAs lower conduction-band minima: Ordering and properties (1976) (349)
- Anisotropies in the above-bandgap optical spectra of cubic semiconductors. (1985) (312)
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV (1984) (278)
- Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum. (1992) (255)
- Optical properties of Au: Sample effects (1980) (242)
- Precision bounds to ellipsometer systems. (1975) (229)
- Electric-Field Effects on Optical Absorption near Thresholds in Solids (1966) (217)
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide (1980) (215)
- RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES (1983) (204)
- Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition. (1992) (180)
- Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation (1984) (175)
- Approximate solution of ellipsometric equations for optically biaxial crystals. (1980) (174)
- Electric Field Effects on the Dielectric Constant of Solids (1967) (174)
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). (1987) (173)
- Above-bandgap optical anisotropies in cubic semiconductors: A visible-near ultraviolet probe of surfaces (1985) (172)
- Chemical etching and cleaning procedures for Si, Ge, and some III‐V compound semiconductors (1981) (166)
- Dependence of plasmon polaritons on the thickness of indium tin oxide thin films (2008) (147)
- Fourier transform detection system for rotating-analyzer ellipsometers (1973) (140)
- Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry (1984) (137)
- Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films (2015) (136)
- Shallow acceptor complexes in p-type ZnO (2013) (133)
- Photoelectrochemical hydrogen evolution and water photolyzing semiconductor suspensions: properties of platinum group metal catalyst-semiconductor contacts in air and in hydrogen (1984) (128)
- Optimizing precision of rotating-analyzer ellipsometers (1974) (126)
- Resonant Nonlinear Optical Susceptibility: Electroreflectance in the Low-Field Limit (1972) (126)
- Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillations (1974) (123)
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometers (1974) (120)
- Kinetic limits of monolayer growth on (001) GaAs by organometallic chemical-vapor deposition. (1988) (113)
- Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition (1992) (110)
- Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements (1993) (109)
- Dielectric function of Si‐SiO2 and Si‐Si3N4 mixtures (1979) (108)
- Energy-Band Theory of the Second-Order Nonlinear Optical Susceptibility of Crystals of Zinc-Blende Symmetry (1972) (104)
- Optical Properties of the Interface between Si and Its Thermally Grown Oxide (1979) (104)
- Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy (1990) (102)
- Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films. (2009) (98)
- Analytic representations of the dielectric functions of materials for device and structural modeling (1998) (95)
- Ordering and Absolute Energies of the L6c and X6c Conduction Band Minima in GaAs (1976) (93)
- Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth (1988) (93)
- Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV (1981) (92)
- High-Resolution Interband-Energy Measurements from Electroreflectance Spectra (1971) (91)
- Biatomic steps on (001) silicon surfaces. (1986) (87)
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimeters. (1978) (87)
- Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs. (1990) (86)
- Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy (1988) (86)
- Theory of dielectric-function anisotropies of (001) GaAs (2 x 1) surfaces. (1990) (84)
- Electro-Absorption Effects at the Band Edges of Silicon and Germanium (1966) (84)
- Spectroscopic ellipsometry — Past, present, and future (2014) (84)
- Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates (1996) (83)
- Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. II. Substrate, oxide, and interface properties (1984) (82)
- Expanding horizons: new developments in ellipsometry and polarimetry (2004) (80)
- The Accurate Determination of Optical Properties by Ellipsometry (1997) (79)
- Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. I. Chemical oxidation and etching (1984) (77)
- Surface-Induced Optical Anisotropies of Single-Domain (2 x 1) Reconstructed (001) Si and Ge Surfaces. (1995) (77)
- Optical properties of anodically grown native oxides on some Ga‐V compounds from 1.5 to 6.0 eV (1977) (73)
- Bounds on allowed values of the effective dielectric function of two-component composites at finite frequencies (1982) (73)
- ELLIPSOMETRY IN THIN FILM ANALYSIS (1981) (73)
- Optical properties of In 1-x Ga x As y P 1-y from 1.5 to 6.0 eV determined by spectroscopic ellipsometry (1982) (72)
- Optical-standard surfaces of single-crystal silicon for calibrating ellipsometers and reflectometers. (1994) (70)
- Electroreflectance and ellipsometry of silicon from 3 to 6 eV (1978) (69)
- Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs (1982) (69)
- Chapter 5 – The Accurate Determination of Optical Properties by Ellipsometry (1985) (69)
- Optical properties of low‐pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV (1981) (69)
- In situ determination of free‐carrier concentrations by reflectance difference spectroscopy (1991) (68)
- Studies of surface, thin film and interface properties by automatic spectroscopic ellipsometry (1981) (67)
- Oxygen-deficiency-induced localized optical excitations in YBa2Cu (1988) (67)
- Direct Verification of the Third-Derivative Nature of Electroreflectance Spectra (1972) (66)
- Optical response of microscopically rough surfaces. (1990) (64)
- Relationship among reflectance‐difference spectroscopy, surface photoabsorption, and spectroellipsometry (1993) (64)
- Approximate Treatment of Exciton Effects in Electric Field Modulation Via the Slater-Koster Interaction (1970) (63)
- Determination of optical properties of thin organic films by spectroellipsometry (1986) (63)
- Optical control of growth of AlxGa1−xAs by organometallic molecular beam epitaxy (1990) (61)
- INTERBAND DIELECTRIC PROPERTIES OF SOLIDS IN AN ELECTRIC FIELD. (1968) (60)
- Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces (1994) (59)
- Schottky-barrier electroreflectance of Ge: Nondegenerate and orbitally degenerate critical points (1975) (59)
- Dielectric function and surface microroughness measurements of InSb by spectroscopic ellipsometry (1980) (58)
- Linearized Third-Derivative Spectroscopy with Depletion-Barrier Modulation (1972) (58)
- Electro-Optic Measurements of PbS, PbSe, and PbTe (1968) (58)
- Optical properties of copper-oxygen planes in superconducting oxides and related materials. (1989) (58)
- Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs (1989) (57)
- Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition (1992) (57)
- Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuum (1989) (57)
- Simplified bond-hyperpolarizability model of second harmonic generation (2002) (56)
- Transparent metals preparation and characterization of light-transmitting platinum films (1985) (56)
- Microstructural Information From Optical Properties In Semiconductor Technology (1981) (55)
- Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry (1996) (55)
- Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy (1994) (51)
- Semiconductor topography in aqueous environments: tunneling microscopy of chemomechanically polished (001) GaAs (1987) (50)
- A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE. (1978) (50)
- Real-time optical diagnostics for epitaxial growth (1991) (49)
- Photoemission Studies of 2p Core Levels of Pure and Heavily Doped Silicon (1978) (48)
- New developments in spectroellipsometry : the challenge of surfaces (1993) (48)
- Direct observation of the E0 and E0 + Δ0 transitions in silicon (1972) (48)
- Optical studies of molecular‐beam epitaxy growth of GaAs and AlAs (1988) (47)
- Interband Masses of Higher Interband Critical Points in Ge (1973) (47)
- An investigation of ion-bombarded and annealed surfaces of Ge by spectroscopic ellipsometry (1980) (47)
- Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions (1991) (46)
- Analysis of modulation spectra of stratified media (1973) (44)
- Measurement and Correction of First-Order Errors in Ellipsometry (1971) (44)
- Rotating-compensator analyzer fixed analyzer ellipsometer : Analysis and comparison to other automatic ellipsometers (1976) (43)
- Optical anisotropy of YBa2Cu3O7-x. (1988) (43)
- Asymptotic convolution integral for electric field effects on the interband dielectric function (1970) (42)
- Optical properties of high-T/sub c/ superconductors (1989) (40)
- Broadband spectral operation of a rotating-compensator ellipsometer (1998) (40)
- Variation of GaN valence bands with biaxial stress and quantification of residual stress (1997) (40)
- Barrier height and leakage reduction in n‐GaAs–platinum group metal Schottky barriers upon exposure to hydrogen (1983) (39)
- In situ monitoring of crystal growth by reflectance difference spectroscopy (1991) (39)
- Observation and analysis of epitaxial growth with reflectance-difference spectroscopy (1995) (39)
- Electroreflectance of GaAs and GaP to 27 eV using synchrotron radiation (1975) (39)
- Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces (1996) (38)
- Optical approaches to determine near‐surface compositions during epitaxy (1996) (38)
- Trends in residual stress for GaN/AlN/6H–SiC heterostructures (1998) (38)
- Properties of Hg0.71Cd0.29Te and some native oxides by spectroscopic ellipsometry (1983) (38)
- Correlation of dopant-induced optical transitions with superconductivity in La2-xSrxCuO4- delta. (1988) (37)
- Dielectric functions of In x Ga 1-x As alloys (2003) (37)
- Finite-wavelength effects in composite media (1982) (37)
- Atomic layer epitaxy on (001) GaAs: Real‐time spectroscopy (1992) (37)
- Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides (2016) (36)
- Photometric ellipsometer for measuring partially polarized light (1975) (36)
- Optically monitoring and controlling epitaxial growth (1992) (35)
- The analysis of optical spectra by fourier methods (1983) (35)
- Transverse electroreflectance in semi-insulating silicon and gallium arsenide (1970) (35)
- Reflectance–difference spectroscopy of (110) GaAs and InP (1987) (33)
- Minimal‐data approaches for determining outer‐layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements (1993) (33)
- Above‐bandgap optical anisotropies in the reflectance spectra of some cubic semiconductors (1985) (33)
- Optimizing precision of rotating-analyzer and rotating-compensator ellipsometers. (2004) (33)
- Dependence of photoreflectance on space charge electric fields in Ge (1970) (33)
- Semiconductor interface characterization in photoelectrochemical solar cells: the p-InP (111)A face (1982) (32)
- Optical characterization of surfaces during epitaxial growth using RDS and GIXS (1996) (32)
- SPECTROSCOPIC ELLIPSOMETRIC CHARACTERIZATION OF UNDOPED ZNTE FILMS GROWN ON GAAS (1997) (32)
- Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence X-ray scattering (1995) (31)
- Second indirect band gap in silicon (1974) (31)
- Strain dependence of effective masses in tetrahedral semiconductors (1978) (31)
- Real-time observation of atomic ordering in (001) In0.53Ga0.47As epitaxial layers. (1995) (31)
- Optical spectra and electronic structure of crystalline and glassy Ge(S,Se)2 (1981) (30)
- Role of step‐flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire‐like arrays (1990) (30)
- The determination of interface layers by spectroscopic ellipsometry (1979) (30)
- Interpretation of surface‐induced optical anisotropy of clean, hydrogenated, and oxidized vicinal silicon surfaces investigated by reflectance‐difference spectroscopy (1996) (30)
- Piezoresistance and the conduction-band minima of GaAs (1978) (29)
- Stability of (100)GaAs surfaces in aqueous solutions (1985) (29)
- Microstructurally engineered, optically transmissive, electrically conductive metal films (1986) (28)
- Isotopic effects on the dielectric response of Si around the E 1 gap (2000) (28)
- Optical anisotropy spectra of GaAs(001) surfaces (1992) (28)
- Optical characterization of surface and interface oxygen content in YBa2Cu3Ox (1988) (28)
- Surface chemical reactions on In0.53Ga0.47As (1983) (27)
- Virtual photoconductivity. (1989) (27)
- Nondestructive analysis of Si3N4/SiO2/Si structures using spectroscopic ellipsometry (1981) (27)
- Bounds to Average Internal Fields in Two-Component Composites (1982) (27)
- Plasmonics and effective-medium theories (2011) (27)
- Surface states on cleaved (111) silicon surfaces (1966) (26)
- Peroxide etch chemistry on 〈100〉In0.53Ga0.47As (1982) (26)
- Reflectance-difference spectroscopy: a new probe of crystal growth by MBE and OMCVD (1989) (26)
- Optical approaches to the determination of composition of semiconductor alloys during epitaxy (1995) (26)
- As capture and the growth of ultrathin InAs layers on InP (1994) (26)
- Parametric modeling of the dielectric functions of Cd1−xMgxTe alloy films (2004) (25)
- Optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys (2000) (25)
- Comparison of reflectance difference spectroscopy and surface photoabsorption used for the investigation of anisotropic surfaces (1993) (25)
- Analysis of cermet films with large metal packing fractions. (1986) (25)
- Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si (1995) (25)
- Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs (1989) (24)
- Electroreflectance of GaSb from 0.6 to 26 eV (1976) (24)
- Polarimetry of Specular and Non-Multiple-Scattered Electromagnetic Radiation from Selectively Roughened Si Surfaces (1978) (24)
- In Situ Measurement and Analysis of Plasma‐Grown GaAs Oxides with Spectroscopic Ellipsometry (1980) (24)
- Spectroscopic ellipsometry—A perspective (2013) (24)
- Nondestructive characterization of interface layers between Si or GaAs and their oxides by spectroscopic ellipsometry (1979) (24)
- Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates (2006) (24)
- Interface ellipsometry: An overview (1980) (23)
- Contactless electrical characterization and realization of p-type ZnSe (1991) (22)
- Interband transitions of InAsxSb1−x alloy films (2009) (22)
- Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space (2001) (22)
- Application of the anisotropic bond model to second-harmonic generation from amorphous media (2007) (22)
- Geometrically exact ellipsometer alignment. (1971) (22)
- Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry (1981) (21)
- Local-Field Effects on Electroreflectance Line Shapes: the Contact Exciton (1972) (21)
- Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM (2012) (21)
- E 1 Transition in Ge: Two Dimensional or Three Dimensional? (1973) (21)
- Surface and interface effects on ellipsometric spectra of crystalline Si (1997) (21)
- Chapter 6 Electric-Field Effects on the Dielectric Function of Semiconductors and Insulators (1972) (21)
- Combined Investigation of Nonuniform-Field Electroreflectance and Surface Galvanomagnetic Properties in Germanium (1969) (21)
- Evidence of near-surface localization of excited electronic states in crystalline Si (1997) (21)
- Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling (1998) (20)
- Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS (1998) (20)
- Ellipsometric studies of Cd1−xMgxTe (0⩽x⩽0.5) alloys (1997) (20)
- Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces (2002) (20)
- Fine structure in optical transitions from 3d and 4d core levels to the lower conduction band in Ga-V and In-V compounds (1979) (20)
- Franz-Keldysh contributions to third-order optical susceptibilities (1969) (20)
- Optical approaches for controlling epitaxial growth (1998) (20)
- Experiment and theory of ‘transparent’ metal films (1985) (19)
- Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity (1997) (19)
- Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV (2001) (19)
- Optical study of (AlxGa1−x)0.5In0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry (1993) (18)
- Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys (2000) (18)
- Analysis Of Semiconductor Materials And Structures By Spectroellipsometry (1988) (18)
- Soft-X-ray electroreflectance: Final-state effects on Si (2p) optical transitions (1977) (18)
- Optical reflectance measurements of transients during molecular‐beam epitaxial growth on (001) GaAs (1988) (18)
- Molecular layer epitaxy by real-time optical process monitoring (1997) (17)
- Electric-Field Modulation of the Vibrational Absorption of OH−in KBr (1966) (17)
- Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces (1990) (17)
- Steps on (001) silicon surfaces (1987) (17)
- Grain-size effects in the parallel-band absorption spectrum of aluminum. (1986) (17)
- Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si (2010) (16)
- Optical properties of InSb and its electrochemically grown anodic oxide (1981) (16)
- Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra (2007) (16)
- Multiple determination of the optical constants of thin-film coating materials: a Rh sequel. (1986) (16)
- Electroreflectance of GaP to 27 eV (1974) (16)
- Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces (2001) (16)
- In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy (2000) (16)
- Effect of Ar+ ion beam in the process of plasma surface modification of PET films (2000) (16)
- Dimer formation on (001) GaAs under organometallic chemical vapor deposition growth conditions (1992) (16)
- Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular‐beam epitaxy growth (1989) (16)
- A photometric ellipsometer for measuring flux in a general state of polarization (1976) (15)
- Summary Abstract: Preparation of high‐quality surfaces on semiconductors by selective chemical etching (1982) (15)
- Dielectric function of thin polypyrrole and Prussian blue films by spectroscopic ellipsometry (1983) (15)
- Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition (2000) (15)
- Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon (1999) (15)
- Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions (2008) (15)
- Analytic determination of n, κ, and d of an absorbing film from polarimetric data in the thin-film limit (2007) (15)
- Extended spectroscopy with high-resolution scanning ellipsometry (1975) (15)
- Optical properties of LPCVD aB (H) (1980) (14)
- Relative bulk and interface contributions to optical second-harmonic generation in silicon (2005) (14)
- SEMICONDUCTOR INTERFACE CHARACTERIZATION IN PHOTOELECTROCHEMICAL SOLAR CELLS: THE P-INDIUM PHOSPHIDE (111)A FACE (1982) (14)
- Analysis of optical spectra by Fourier methods: filtering and least-squares regression in reciprocal space (1983) (14)
- Optical dielectric response of PdO. (1992) (14)
- Magnetic and magneto‐optic properties of epitaxial ferromagnetic τ‐MnAl/(Al,Ga)As heterostructures (1992) (14)
- Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system (2004) (14)
- Dielectric functions and electronic structure of InAsxP1−x films on InP (2007) (14)
- Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition (1993) (14)
- Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometry (1992) (14)
- Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model (2004) (14)
- Fourier critical point analysis: extension to Gaussian lineshapes (1994) (14)
- Dielectric functions and interband transitions of InxAl1 - xP alloys (2014) (14)
- Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV (2010) (13)
- Dielectric functions of InxGa1-xAs alloys (2003) (13)
- Spectroscopic ellipsometric and He backscattering analyses of crystalline Si‐SiO2 mixtures grown by molecular beam epitaxy (1984) (13)
- Influence of spatially dependent perturbations on modulated reflectance and absorption of solids (1993) (13)
- Combined interpolation, scale change, and noise reduction in spectral analysis (2019) (13)
- Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth (1993) (13)
- Effect of surface and nonuniform fields in electroreflectance: Application to Ge (1978) (12)
- Alignment of an optically active biplate compensator. (1971) (12)
- Optical properties of Cd1−xMgxTe (x=0.00, 0.23, 0.31, and 0.43) alloy films (2004) (12)
- Electron-Core-Hole Interaction in GaAsP (1980) (12)
- Temperature Coefficients of Energy Separations between Ga 3d Core Levels and sp3 Valence-Conduction Bands in GaP (1976) (12)
- COMMENT ON: AB INITIO CALCULATION OF EXCITONIC EFFECTS IN THE OPTICAL SPECTRA OF SEMICONDUCTORS. AUTHORS' REPLY (1999) (12)
- Optical properties of InxAl1−xAs alloy films (2008) (12)
- Optical characterization of wide bandgap semiconductors (2000) (12)
- Automated control of III-V semiconductor composition and structure by spectroellipsometry (1992) (12)
- Reflectance-Difference Spectroscopy: A New Look At Semiconductor Crystal Growth By MBE And OMCVD (1989) (12)
- Real time in situ observation of (001) GaAs in OMCVD by reflectance difference spectroscopy (1992) (11)
- Surface-induced optical anisotropy of Si and Ge (1996) (11)
- Recent progress in the nondestructive analysis of surfaces, thin films, and interfaces by spectroellipsometry (1985) (11)
- Reflectance difference spectroscopy spectra of clean (3×2), (2×1), and c(2×2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra (1998) (10)
- Photon-induced localization and final-state correlation effects in optically absorbing materials (1998) (10)
- Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates (1997) (10)
- Interpretation of the dielectric function of porous silicon layers (1996) (10)
- Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations (2011) (10)
- “Transparent” metals: preparation and characterization of light-transmitting palladium, rhodium, and rhenium films (1987) (10)
- Digital data smoothing utilizing Chebyshev polynomials (1975) (10)
- Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions (1996) (10)
- Electroreflectance: A Status Report (1973) (10)
- High-efficiency concave-grating monochromator with wavelength-independent focusing characteristics (1982) (10)
- Study of Mo-, Au-, and Ni-implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellipsometry (1986) (10)
- Performance capabilities of reflectometers and ellipsometers for compositional analysis during AlxGa1−xAs epitaxy (1995) (9)
- Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry (2000) (9)
- Electric-Field-Induced Spectral Shifts of the OH Vibrational Absorption Line in Alcohols (1967) (9)
- OPTICAL CHARACTERIZATION BY ELLIPSOMETRY – A PROSPECTIVE (1983) (9)
- Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si (2011) (9)
- Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry (1998) (9)
- Modulation spectroscopy at non‐normal incidence with emphasis on the vacuum‐uv spectral region (1976) (9)
- The Characterization Of Materials By Spectroscopic Ellipsometry (1984) (9)
- Ge-Aqueous-Electrolyte Interface: Electrical Properties and Electroreflectance at the Fundamental Direct Threshold (1970) (9)
- Linear and nonlinear filtering of spectra (2019) (9)
- Analysis of optical spectra by Fourier methods (1998) (8)
- Properties and performance of grazing-incidence mirror systems (1982) (8)
- Porous silicon layers as a model system for nanostructures (1996) (8)
- Real-time optical monitoring of GaxIn1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions (1996) (8)
- Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry (2007) (8)
- Line shape and symmetry analysis of core-level electroreflectance spectra of GaP (1976) (8)
- Simple Method of Ratio Recording (1967) (8)
- Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping (2010) (8)
- External removal of endpoint-discontinuity artifacts in the reciprocal-space analysis of spectra (2020) (8)
- Pseudodielectric functions of InGaAs alloy films grown on InP (2002) (8)
- Biplate artifacts in rotating-compensator ellipsometers (2004) (8)
- Optical properties of high T c superconductors (1989) (8)
- Raman scattering in GaSb/AlSb strained‐layer lattices (1987) (8)
- Dielectric function of epitaxial ZnSe films (2000) (8)
- Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions (1996) (7)
- Common-axis rotationally symmetric anamorphic mirror combinations: application to synchrotron-radiation beam lines (1981) (7)
- Origin of optical anisotropy in strained In x Ga 1-x As/InP and In y Al (1994) (7)
- Detection and analysis of depolarization artifacts in rotating-compensator polarimeters. (2001) (7)
- ZnSe/ZnCdSe quantum well light emitting diodes (1992) (7)
- Interband transitions and dielectric functions of InGaSb alloys (2013) (7)
- Surface transition regions & visible-near UV optical properties of some semiconductors (1983) (7)
- Bond models in linear and nonlinear optics (2010) (7)
- Thermoreflectance and temperature dependence of the L 2,3 soft-x-ray threshold in Si (1977) (7)
- Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition (2004) (7)
- Coherence Effects and Time Dependences of the Optical Response of Surfaces and Interfaces of Optically Absorbing Materials (2000) (7)
- Dielectric functions and interband transitions of In1-XAlXSb alloys (2010) (7)
- Optical characterization of a native oxide anodically grown on gallium antimonide (1976) (7)
- Photon-induced localization in optically absorbing materials (1999) (7)
- Photomultiplier Linearization And System Stabilization For Photometric Ellipsometers And Polarimeters (1977) (7)
- Investigation and Control of MOVPE Growth by Combined Spectroscopic Ellipsometry and Reflectance‐Difference Spectroscopy (2001) (7)
- Surface dielectric anisotropies and phase diagrams of (001) GaAs (1990) (7)
- Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces (2006) (7)
- Optical properties related to local structures in CuO superconductors (1989) (6)
- HIGH-RESOLUTION SPECTROSCOPY WITH RECIPROCAL-SPACE ANALYSIS (1999) (6)
- Extended Gaussian Filtering for Noise Reduction in Spectral Analysis (2020) (6)
- Characterization of AlxGa1—xN‐Compound Layers by Reflectance Difference Spectroscopy (2000) (6)
- Band Structure and Optical Properties of In1-xGaxAsyP1-y (1980) (6)
- Nonlinear Optical Susceptibilities from Electroreflectance Moments Analysis (1971) (6)
- Applications of spectroellipsometry to the growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy (1991) (6)
- A Capacitive Divider Technique for Fast Interface Capacitance Measurement (1969) (6)
- High-resolution electroreflectance measurements of GaAs (1973) (6)
- Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si (2007) (6)
- Extending scanning ellipsometric spectra into experimentally inaccessible regions (1976) (6)
- Surface reconstruction of GaAs (001) during OMCVD growth (1993) (6)
- Imaging performance of mirror pairs for grazing-incidence applications: a comparison. (1982) (6)
- Summary Abstract: Nondestructive analysis of native oxides and interfaces on Hg1−xCdxTe (1984) (5)
- Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy (1996) (5)
- Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs (1987) (5)
- Surface preparation and characterization by spectroellipsometry: Application to (100)GaAs (1985) (5)
- Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor (2000) (5)
- Modulation spectroscopy in the far UV (1977) (5)
- Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films (1998) (5)
- Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model (2013) (5)
- REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY. (1983) (5)
- Optical Characterization of Chemically Vapor Deposited and Laser-Annealed Polysilicon (1981) (5)
- Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states (1998) (5)
- Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation (2003) (5)
- Optical Approaches to Real-Time Analysis and Control of Crystal Growth (1990) (5)
- Real‐time diagnostics for metalorganic vapor phase epitaxy (2005) (5)
- Dielectric functions of AlxGa1−xSb (0.00⩽x⩽0.39) alloys from 1.5to6.0eV (2005) (5)
- Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films (1997) (5)
- Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system (2004) (5)
- Geometrically Exact Monochromator Alignment (1970) (5)
- Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy (1992) (5)
- Maximum-entropy revisited: Optimal filtering of spectra (2021) (4)
- Quantitative assessment of linear noise-reduction filters for spectroscopy. (2020) (4)
- Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy (1999) (4)
- Optical determination of exciton sizes in semiconductors (1983) (4)
- PIEZOELECTRIC MEASUREMENTS USING AN ATOMIC FORCE MICROSCOPE (1999) (4)
- Optical properties of the metallic glass Pd0.775Cu0.06Si0.165 over the energy range 0.67 to 5.6 eV (1979) (4)
- Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition (2009) (4)
- Overlayer effects in the critical-point analysis of ellipsometric spectra : Application to InxGa1-xAs alloys (2008) (4)
- Optical techniques for in-situ analysis and control of semiconductor crystal growth (1990) (4)
- The anisotropic bond model of nonlinear optics (2008) (4)
- Observation of quasidirect transitions in In1-xGaxP/graded GaP (0.58 <= x <= 0.75) alloys near the Gamma -X1 crossover. (1995) (4)
- Toward nκd spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit (2006) (4)
- Follow the light : Ellipsometry and polarimetry (2009) (4)
- Analysis of Strain in GaN on Al 2 O 3 and 6H-SiC: Near-Bandedge Phenomena (1995) (4)
- Optical Properties of Dopant Induced States in La2−xSrxCuO4-δ Compounds (1987) (3)
- Fourier Analysis Of Optical Spectra: Application To AlxGa1-xAs And GaAs1-xPx (1984) (3)
- Real-Time Surface and Near-Surface Optical Diagnostics for Epitaxial Growth (1993) (3)
- New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal‐oxide‐semiconductor devices (1996) (3)
- High‐Resolution Spectroscopy with Reciprocal‐Space Analysis: Application to Isotopically Pure Si (2000) (3)
- Rotating compensator spectroscopic ellipsometry (RCSE) and its application to high-k dielectric film HfO2 (2000) (3)
- Reciprocal‐space analysis of photoluminescence and photoluminescence excitation spectra (1996) (3)
- Dielectric properties of InAsP alloy thin films and evaluation of direct‐ and reciprocal‐space methods of determining critical‐point parameters (2008) (3)
- In Situ Optical Measurements Of The Growth Of GaAs and AlGaAs By Molecular Beam Epitaxy (1988) (3)
- Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment (2011) (3)
- Note on Collision Broadening of Franz-Keldysh Effect (1967) (3)
- Comments on the determination of the absolute alignment of a polarizer. (1970) (3)
- ELLIPSOMETRIC STUDIES OF GaAs1-xPx : FOURIER ANALYSIS OF CRITICAL POINT COMPLEXES (1983) (3)
- Electric Field Effects in Optical and First-Derivative Modulation Spectroscopy (1972) (3)
- Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV (2002) (3)
- Investigation of noise in a spectrometer system using a short-arc source (2001) (3)
- Thickness inhomogenities in the organometallic chemical vapor deposition of GaP (2008) (3)
- Steps on (001) Si Surfaces (1987) (3)
- Many-Body and Correlation Effects in Surface and Interface Spectra of Optically Absorbing Materials (1998) (3)
- Structural and Microstructural Determinations of Crystalline and Amorphous Fractions of Microcrystalline Ge: A Comparison (1985) (2)
- Optical Properties of InGaAs Alloy Films in the E2 Region by Spectroscopic Ellipsometry (2003) (2)
- LASER CRYSTALLIZATION OF DEPOSITED SILICON FILMS. (1980) (2)
- Study of the dielectric function of ZnS by spectroscopic ellipsometry (2003) (2)
- Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters (1996) (2)
- Observation of color centers in α- and Na β- alumina by electron energy loss and optical spectroscopies (1977) (2)
- Reflectance Difference Spectroscopy Characterization of AlxGa1—xN‐Compound Layers (1999) (2)
- In-Plane Optical Anisotropies of Al x Ga 1-x N films in their Regions of Transparency (1996) (2)
- Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra (2005) (2)
- Characterization of Materials, Thin Films, and Interfaces by Optical Reflectance and Ellipsometric Techniques (1986) (2)
- Linear and Nonlinear Optical Spectroscopy of Surfaces and Interfaces (2001) (2)
- Properties And Performance Of Grazing Incidence Reflectors (1982) (2)
- Optical anisotropy relevant to rotating-compensator polarimeters: application to the monoplate retarder (2004) (2)
- Kinetic Limits to Growth on GaAs by Omcvd (1989) (2)
- LINEAR OPTICAL PROPERTIES OF SI SURFACES AND NANOSTRUCTURES (1999) (2)
- Towards a Microscopic Interpretation of the Dielectric Function of Porous Silicon (1995) (2)
- The nearly aligned rotating‐monoplate compensator (2008) (2)
- Parameterization of the dielectric functions of InGaSb alloys (2014) (2)
- 3 – Spectroscopic Ellipsometry in Plasma Processing (1989) (2)
- Simplified bond‐hyperpolarizability model of second‐ and fourth‐harmonic generation: application to Si–SiO2 interfaces (2003) (2)
- Classical Correlation Model of Resonance Raman Spectroscopy. (2020) (1)
- Kinetic limits to growth on (001) and (110) GaAs by OMCVD (1990) (1)
- Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation (2012) (1)
- Uncertainty Of Multiple Determination Of Optical Constants And Layer Thicknesses Of Thin Films Case Of TiO2/Ag/TiO2 Coating On Glass (1989) (1)
- Summary Abstract: Nondestructive determination of the microstructure of materials by visible‐near ultraviolet spectroellipsometry and spectrophotometry (1986) (1)
- Grating method for determining the absolute angle of incidence of ellipsometric samples in remote locations. (1992) (1)
- Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD (1990) (1)
- IIIB-8 lower conduction band minima in GaAs and GaAs1-xPxalloys (1976) (1)
- A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy (1995) (1)
- Dielectric Functions and Critical Points of GaAsSb Alloys (2019) (1)
- Structures and Reactions on (1992) (1)
- Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry (2008) (1)
- Photonic band structure (1987) (1)
- Surface effects in electroreflectance: Theory and experiment (1977) (1)
- Proximal electromagnetic shear forces (1999) (1)
- Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Electronic Transitions. (2020) (1)
- Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (2006) (1)
- Defining and Analysing the Optical Properties of Materials at the Nanoscale: A Collection of Thoughts, Opinions, Ideas and Data that Have Matured Over Years on Exploiting Ellipsometry for a Range of Characterisation Needs (2010) (1)
- Eliminating white noise in spectra: A generalized maximum-entropy approach (2022) (1)
- Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition (2010) (1)
- Classical Model of Surface Enhanced Infrared Absorption (SEIRA) Spectroscopy. (2022) (1)
- Nondestructive analysis of coated periodic nanostructures from optical data. (2010) (1)
- Analysis of interface layers by spectroscopic ellipsometry (2008) (1)
- Real-time characterization of GaSb homo- and heteroepitaxy (2004) (1)
- Optical properties of epitaxial ZnGeAs2 thin film (2009) (1)
- Determination Of Indirect Conduction Band Minima In Semiconductors By Core-Level Reflectance Spectroscopy (1984) (1)
- Dielectric functions of Cd1-xMgxTe alloy films by uusing spectroscopic ellipsometry (2003) (1)
- Corrigendum to: “Suppression of Jahn–Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3”: [Radiat. Phys. Chem. 75 (2006) 1591–1595] (2007) (1)
- Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry (2006) (1)
- Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry (2011) (1)
- Reflectance-difference studies of organometallic chemical vapor deposition growth transients on (100) GaAs (1988) (1)
- Substantially Transparent Pt, Pd, Rh, And Re Films: Preparation and Properties (1987) (1)
- Modulation spectroscopy with synchrotron radiation (1977) (1)
- Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry (2001) (0)
- Ellipsometric study on the optical property of InxAl1-xP alloys (2013) (0)
- Study of Mo, Au, and Ni implanted molybdenum laser mirrors by spectroscopic ellipsometry (1985) (0)
- 9-1980 Electron-Core-Hole Interaction in GaAsP (2017) (0)
- Real-time Optical Monitoring of Ga x In 1−x P/GaP Heterostructures on Silicon (1995) (0)
- Doping‐dependent correlations between electronic transitions and superconductivity in La2−xSrxCuO4−δ (2008) (0)
- ACSI-3 : proceedings of the Third International Symposium on Atomically Controlled Surfaces and Interfaces, Raleigh, NC, USA, October 12-14, 1995 (1996) (0)
- Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures (1998) (0)
- Optical characterization techniques for semiconductor technology : April 1-2, 1981, San Jose, California (1981) (0)
- Spatial Correlation Interpretation of Effects of As + Implantation on the Raman Spectra of GaAs (1983) (0)
- Dielectric Function and Bowing Parameter of Zn$_{1-x}$Mg$_x$Se and Zn$_{1-x}$Be$_x$Se Alloys (2000) (0)
- Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information (2014) (0)
- Optical feedback control of epitaxial growth (1994) (0)
- Thickness inhomogenities and growth mechanisms of GaP heteroepitaxy (2008) (0)
- Relectance-Difference-Spectroscopy Study of Surface Reactions of Organometallics and Arsine on (1992) (0)
- Modeling Shallow Core-Level Transitions in the Reflectance Spectra of Gallium-Containing Semiconductors (2012) (0)
- Optical Approaches to Determination of Compositi Semiconductor Alloys During E (1995) (0)
- SUBSTANTIALLY TRANSPARENT PLATINUM FILMS. (1985) (0)
- Ellipsometric studies of GaAs 1-x Bi x (0.00 <= x <= 0.13) alloys (2010) (0)
- Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation (2012) (0)
- Optical properties of high‐Tc superconductors: Who needed this anyway (2008) (0)
- Nonlinear Optics Simplified (2008) (0)
- Optical properties of InAlSb from spectroscopic-ellipsometric measurements and band-structure calculations (2010) (0)
- Optical properties of InxAl1-xP alloys studied by spectroscopic ellipsometry (2012) (0)
- Comparison of High-Resolution Ellipsometric and Electroreflectance Spectra of Ge, GaAs, and Si (1974) (0)
- In-plane optical anisotropies of Al{sub x}Ga{sub 1{minus}x}N films in their regions of transparency (1997) (0)
- "Transparent" Metals: Preparation and Characterization of Light-Transmitting Platinum Films. (1986) (0)
- Optical approaches to monitoring and controlling semiconductor growth and processing (1991) (0)
- Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures (1994) (0)
- Surface chemical reactivity of plasma‐deposited amorphous silicon (2008) (0)
- Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And Study Of Subsequent Chemical Stability (1997) (0)
- Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces. (1988) (0)
- Spectroscopic ellipsometry study of InGaAs alloy films grown on InP (2001) (0)
- SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SILICON AND ITS THERMALLY GROWN OXIDE (1980) (0)
- Detection of the biexciton of monolayer WS 2 in ellipsometric data: a maximum‐entropy success (2022) (0)
- Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si (2010) (0)
- Origin of second-harmonic generation of Si nanoinclusions in glass (2007) (0)
- Reflectance-difference spectroscopy: application to semiconductor crystal growth by OMCVD and MBE (1990) (0)
- Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry (1991) (0)
- Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy (1996) (0)
- Dipole-radiation model for terahertz radiation from semiconductors (2005) (0)
- Optimizing extraction of information from resonance lines in Fourier-transform infrared spectroscopy (2008) (0)
- Arsenic-phosphorus exchange during the formation of InAlAs/InP interfaces (1992) (0)
- Erratum: ‘‘Optical study of (AlxGa1−x)0.5ln0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry’’ [J. Appl. Phys. 73, 400 (1993)] (1994) (0)
- Real-time monitoring of epitaxial growth (2000) (0)
- Correlations Between XAS and Spectroscopic Ellipsometry Studies and Ab-Initio Quantum Calculations on RPE-MOCVD Deposited Titanium Silicate Alloys (2008) (0)
- Optical properties of InAsP alloys (2005) (0)
- Closed-loop Optical Control Of Ai/sub x/Ga/sub 1-x/As Composition During Crystal Growth By OMMBE (1990) (0)
- International Conference on Modulation Spectroscopy : 19-21 March 1990, San Diego, California (1990) (0)
- Ellipsometric studies of GaAs$_{1-x}$Bi$_{x}$ (0.00 $\le \quad x \quad \le $ 0.13) alloys (2010) (0)
- Real-Time Optical Diagnostics of Epitaxially Grown Semiconductors (1995) (0)
- Real-time observation of bond-by-bond interface formation during oxidation of H-terminated (111)Si by second-harmonic generation (2011) (0)
- Above-Bandgap Polarization Anisotropies in Cubic Semiconductors: A Visible-Near uv Probe of Surfaces (1985) (0)
- Spectroellipsometry of Thin Films (1988) (0)
- Surface field effects in reflectance and first-derivative modulation spectra (1973) (0)
- Spectroscopic ellipsometric study of the dielectric function of ZnSe and its overlayer (2001) (0)
- OPTICAL PROPERTIES OF DOPANT-INDUCED STATES IN A SERIES OF La2−xSrxCuO4−δ COMPOUNDS (1987) (0)
- Chemical-etch-assisted growth of epitaxial zinc oxide (2009) (0)
- III–V Epitaxy, Monitoring and Closed-Loop Feedback Control of Spectroscopic Ellipsometry of (2001) (0)
- Study of Superconducting ANsD Parent Phases by Chemical Modifications (1990) (0)
- Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation (2000) (0)
- Measurement and Control of In‐Plane Surface Chemistry During Oxidation of H‐Terminated (111)Si (2011) (0)
- Electrodynamics of surface-enhanced Raman scattering (2011) (0)
- Doping-dependent correlations between electronic transitions and superconductivity in La/sub 2-x/Sr/sub x/CuO/sub 4-//sub delta/ (1988) (0)
- Optical properties of (GaAs)n(AlAs)n superlattices and the Al//0//.//5Ga//0//.//5As random alloy. (1996) (0)
- Optical properties of (GaSb) 3n(AlSb) n (1≤n≤5) superlattices (2005) (0)
- Plasmon polaritons in conducting-metal-oxide films (2008) (0)
- Surface states on the cleaved (III) silicon surface (1965) (0)
- Analysis of azimuthal dependencies of in situ second-harmonic-generation spectra of RPECVD prepared oxide, nitride, and oxynitride interfaces with Si (2000) (0)
- Characterization of Materials by Visible-Near UV Spectrophotometric and Spectroellipsometric Techniques (1987) (0)
- Reducing or eliminating noise in ellipsometric spectra (2022) (0)
- Maximum-Entropy Revisited (2021) (0)
- Correlation of dopant-iwluced optical transitions with superconductivity in Laz- Sr Cu04 — s (2011) (0)
- Dielectric function measurements on ion-implanted metallic systems (1977) (0)
- Optical characterization of GaAs/AlAs short period superlattices (1998) (0)
- In-Situ and Ex-Situ Studies of Silicon Interfaces and Nanostructures by Ellipsometry and Rds (1995) (0)
- Erratum: Virtual photoconductivity [Phys. Rev. Lett. 63, 976 (1989)] (1989) (0)
- Ellipsometric Study Of YBa2Cu3O7-x (1989) (0)
- Electrodynamic Properties of Nanoscopically Inhomogeneous Materials (2007) (0)
- Application of the Anisotropic Bond Model to a Single Bond Attached to a Sphere (2008) (0)
- Decoding ‘Maximum Entropy’ Deconvolution (2022) (0)
- Real-time optical control of epitaxial III-V semiconductor composition and structure (1992) (0)
- IN SITU STUDIES OF CRYSTAL GROWTH (1988) (0)
- Manuel Cardona, The Person (2016) (0)
- Ordinary and Extra-Ordinary Dielectric Function of 4h- and 6H-SiC in the 0.7 to 9.0 eV Photon Energy Range (2000) (0)
- “Transparent” Metals: Preparation and Characterization of Light-Transmitting Palladium, Rhodium, and Rhenium Films. (1987) (0)
- Dielectric Functions and Critical Points of GaAsSb Alloys (2019) (0)
- Analysis of surface roughness of critical‐dimension structures using spectroscopic ellipsometry (2011) (0)
- Refractive index dispersion in oxide glasses (1980) (0)
- Optical diagnostics for epitaxial growth and processing (1994) (0)
- Crystal absorption spectra (2014) (0)
- Optical properties of AlGaP alloys grown by gas source molecular beam epitaxy (2000) (0)
- Spectroscopic Ellipsometry, Auger and STM Characterization of Epitaxial Graphene grown on 6H-SiC (0001) (2012) (0)
- Wait-Free Data Stru turesin the Asyn hronous PRAM (2000) (0)
- Eliminating noise from spectra by linear and nonlinear methods (2022) (0)
- Virtual Sources in OMCVD Growth of ZnO: The importance of real-time diagnostics for process development (2008) (0)
- OPTICAL PROPERTIES AND INTERFACE ANALYSIS OF THE GaAs-ANODIC OXIDE SYSTEM (1980) (0)
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