David A. Redfield

David A. Redfield's AcademicInfluence.com Rankings

David A. Redfield

Physics

#7411

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#9442

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Physics

David A. Redfield's Degrees

PhD Physics Stanford University
Masters Physics University of California, Berkeley
Bachelors Physics University of California, Berkeley

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David A. Redfield's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Toward a Unified Theory of Urbach's Rule and Exponential Absorption Edges (1972) (585)
Electroabsorption in Semiconductors: The Excitonic Absorption Edge (1970) (329)
Temperature dependence of the optical properties of silicon (1979) (244)
Effect of Defect Fields on the Optical Absorption Edge (1963) (199)
Optical absorption edge of LiNbO3 (1974) (157)
Reinterpretation of degradation kinetics of amorphous silicon (1989) (130)
Multiple‐pass thin‐film silicon solar cell (1974) (122)
THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDS (1967) (104)
Equilibrium thermodynamics and mechanism of cis-trans isomerization for diazidobis(methyldiphenylphosphine)palladium(II) and diazidobis(dimethylphenylphosphine)palladium(II) (1975) (90)
MECHANISMS OF SELENIUM VAPORIZATION WITH PALLADIUM MODIFIERS USING ELECTROTHERMAL ATOMIZATION AND MASS SPECTROMETRIC DETECTION (1991) (82)
Electric Fields of Defects in Solids (1963) (75)
Use of “virtually coupled” 13C{′H} nuclear magnetic resonance for geometry assignments in bis-phosphine transition metal complexes (1) (1974) (64)
Luminescent Properties of Energy-Band-Tail States in GaAs:Si (1970) (64)
Transport properties of electrons in energy band tails (1975) (61)
Equilibrium energetics of cis-trans isomerization for two square-planar palladium(II)-phosphine complexes (1973) (61)
Kinetics, energetics, and origins of defects in amorphous Si:H (1988) (53)
Mechanisms of graphite furnace atomization of aluminum by molecular beam sampling mass spectrometry (1987) (52)
Observation of log σ ∼ T − 1 2 in Three-Dimensional Energy-Band Tails (1973) (51)
Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon (1989) (50)
Photo-induced Defects in Semiconductors (1996) (49)
Effect of Charged Surfaces on the Optical Absorption Edge (1965) (46)
Mechanisms of palladium-induced stabilization of arsenic in electrothermal atomization atomic absorption spectroscopy (1991) (45)
Isomerism energetics and mechanisms for palladium(II) phosphine complexes containing 5-methyl- and 5-trifluoromethyltetrazoles (1974) (44)
Palladium(II) complexes of benzylphosphorus ligands (1977) (42)
Theory of Exponential Absorption Edges in Ionic and Covalent Solids (1971) (42)
Mechanism of performance limitations in heavily doped silicon devices (1978) (41)
Energy-band tails and the optical absorption edge; the case of a-Si:H (1982) (40)
Comparison of atomization mechanisms for group IIA elements in electrothermal atomic absorption spectrometry (1991) (34)
Method for evaluation of antireflection coatings (1981) (31)
Stereochemistry of polar 1,4-addition of bromine to dienes. Structure assignments for dibromocyclohexenes and dibromohexenes (1973) (31)
Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous silicon (1992) (29)
Mechanism of cis-trans isomerization for square planar complexes of the type ML2X2 (1974) (29)
Unified model of fundamental limitations on the performance of silicon solar cells (1980) (26)
Evidence for a stretched‐exponential description of optical defect generation in hydrogenated amorphous silicon (1990) (26)
Mechanisms controlling graphite furnace atomization and stabilization of beryllium (1987) (26)
Electrical characterization of solar cells by surface photovoltage (1981) (25)
"Mixed-ligand" bis-monodentate phosphorus donor ligand complexes of palladium(II), LL'PdCl2. A comprehensive investigation (1976) (25)
Revised model of asymmetric p‐n junctions (1979) (25)
Silicon-silicon interfaces (1982) (24)
Statistical Properties of Disordered Semiconductors (1971) (23)
Arc Lamp Intensity Stabilizer (1961) (23)
Selective observation of electrically active grain boundaries in silicon (1981) (22)
Physical processes in degradation of amorphous Si:H (1986) (21)
The proton and carbon NMR spectra of alkyl-substituted titanocene and zirconocene dichlorides (1980) (19)
Heavy-doping effects in silicon - The role of Auger processes (1981) (18)
Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon (1989) (18)
Investigation of reactions and atomization of arsine in a heated quartz tube using atomic absorption and mass spectrometry (1990) (16)
Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)] (1989) (14)
Interpretation of the activation energy derived from a stretched-exponential description of defect density kinetics in hydrogenated amorphous silicon (1993) (13)
Mechanisms controlling atomisation of strontium and associated interferences by calcium in electrothermal atomic absorption spectrometry (1990) (13)
Recombination Processes in Tellurium (1955) (13)
Fundamental Absorption Edge of SrTi O 3 (1972) (12)
Identification and effect of pre-atomisation losses on the determination of aluminium by graphite furnace atomic absorption spectrometry (1989) (12)
Carrier-wavelength effect on screening in semiconductors (1969) (11)
Reversibility of recombination‐induced defect reactions in amorphous Si:H (1986) (11)
Interpretation of Stretched-Exponential Defect Kinetics in a-Si:H (1992) (10)
Theory for the Photoemission from a Space-Charge Region of a Semiconductor (1961) (10)
Equilibrium thermodynamics of cis-trans-isomerization for diazidobis-(benzyldiphenylphosphine)palladium(II) and diazidobis-(dibenzylphenylphosphine)palladium(II) (1974) (10)
SECTION OF PHYSICAL SCIENCES: OPTICAL EFFECTS OF ELECTRIC FIELDS OF DEFECTS IN SOLIDS* (1964) (9)
Incomplete space‐charge layers in semiconductors (1983) (9)
Evidence for a gradual mobility transition in band tails of heavily doped GaAs (1972) (9)
Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon (1994) (7)
Isolation of Temperature Effects on the Kinetics of Light Induced Defect Generation in a-Si:H (1992) (7)
Analysis of carrier collection efficiencies of thin‐film silicon solar cells (1974) (7)
Defects in amorphous silicon — Extrinsic or intrinsic?* (1991) (7)
Thermal creation of metastable defects in a-Si:H (1987) (6)
The reactions of methyl hypobromite and acetyl hypobromite with olefins (1970) (6)
Defect kinetics in a-Si:H — an alternative description (1989) (6)
Palladium(II) complexes of benzylphosphines, an example of very rigid geometry as determined by high resolution proton nmr spectroscopy at various field strengths (1973) (6)
Reinterpretation of Wavelength-Modulated Absorption in SrTi O 3 without Coexisting Phases (1972) (5)
DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL (1991) (5)
Enhanced photovoltaic performance of thin silicon films by multiple light passes (1975) (5)
Solar energy: Its status and prospects (1976) (5)
Saturation of Metastable-Defect Density in a-Si:H (1990) (5)
Limitations on models describing the kinetics of light‐induced defect creation in hydrogenated amorphous silicon (1992) (4)
Evaluation of degradation in amorphous silicon solar cells (1990) (3)
Procedure for minimizing the cost per watt of photovoltaic systems (1977) (3)
Fermi level effects on photoconductivity during optical degradation of amorphous silicon (1994) (3)
Photovoltaics: an overview (1981) (3)
Optimization of solar cell contacts by system cost-per-watt minimization (1977) (3)
Comprehensive Kinetic of Defects in a-SI:H (1991) (3)
Erratum: WORK‐FUNCTION CHANGES AND PHOTOEMISSION FROM SEMICONDUCTORS (1962) (2)
Alternative Mechanism for Defect Generation in a-Si:H (1995) (2)
Relaxation of Electron Beam-Induced Metastable Defects in a-Si:II (1993) (2)
Infrared Christiansen Filter Effect with Boron Nitride (1961) (2)
Energy band tails and photoconductivity (1969) (2)
Perspectives in mechanisms of electrothermal atomization (1993) (2)
Model for junction luminescence (1963) (2)
Effect of oxygen on photoemission from cleaned Ge (1964) (2)
WORK‐FUNCTION CHANGES AND PHOTOEMISSION FROM SEMICONDUCTORS (1962) (2)
Thermal and Optical Stretched Exponentials in Defect Kinetics in a-Si:H (1993) (1)
Hydrogenated Amorphous Silicon: Photoinduced Defect Kinetics and Processes (1996) (1)
Evidence that degradation in a-Si:H solar cells is an i layer effect (1991) (1)
Recombination-Enhanced Defect Formation and Annealing in a-Si:H (1987) (1)
Light water (1980) (1)
General Explanation of Bias-Anneal Effects in a-Si:H (1988) (1)
Comparison of Electron Beam-Induced and Light-Induced Defect Saturation in a-Si:H (1992) (1)
Disordered Semiconductors with Controllable Properties (1974) (1)
Heavily Doped Semiconductors. Viktor I. Fistul'. Translated from the Russian edition (Moscow, 1967) by Albin Tybulewicz. Plenum, New York, 1969. xii + 420 pp., illus. $25. Monographs in Semiconductor Physics, vol. 1 (1969) (1)
Theory and applications for optimization of every part of a photovoltaic system (1978) (1)
Linkage of Efficiency and Stability of a-Si Solar cells (1989) (1)
Photoinduced Defects in Semiconductors: Preface (1996) (0)
Thin-film polycrystalline silicon solar cells. Technical progress quarterly report No. 3, 25 March 1980-24 June 1980 (1980) (0)
Explanation of Light-Enhanced Annealing of Defects in Amorphous Silicon (1994) (0)
Field-Dependent Conductivity in Band Tails (1974) (0)
Conduction Mechanisms for Electronic Devices (1972) (0)
Photoinduced Defects in Semiconductors: Other Amorphous Semiconductors (1996) (0)
Thin-film polycrystalline silicon solar cells. Final report, 11 September 1979-10 September 1980 (1981) (0)
The Study of Disordered Semiconductors by Compensation (1985) (0)
Optical and electrical effects of charges on defects in non-metals (1975) (0)
ON THE MECHANISM OF CIS‐TRANS ISOMERIZATION FOR SQUARE PLANAR COMPLEXES OF THE TYPE ML(2)X(2) (1974) (0)
“Stable” Defects as, Metastable Defects in a-Si:H (1987) (0)
Method for minimizing the cost/Watt of complete photovoltaic systems and applications (1978) (0)
Evaluation and verification of epitaxial process sequence for silicon solar-cell production. Final program summary report (1981) (0)
Amorphous-silicon solar cells. Final report, 1 October 1980-31 December 1981 (1982) (0)
The rehybridized two‐site (RTS) model for defects in a‐Si:H (2008) (0)
Response to ``Comment on `Physical processes in degradation of amorphous Si:H' '' [Appl. Phys. Lett. (1986) (0)
Degradation rate and saturation defect density in a‐Si:H as a function of temperature and light intensity (2008) (0)
ALTERATION OF CRYSTAL WAVE FUNCTIONS BY LATTICE DEFECTS. (1966) (0)
Metastable Defects and Stretched Exponentials (1993) (0)
Thin-film polycrystalline silicon solar cells. Technical progress quarterly report No. 1, September 25-December 24, 1979 (1980) (0)
Panel on metastability modeling (2008) (0)
Light‐induced annealing of metastable defects in a‐Si:H (2008) (0)
Comprehensive explanation of efficiency limits in silicon solar cells (1979) (0)
III–V Compounds: DX and EL2 Centers (1996) (0)
Photoinduced Defects in Semiconductors: Introduction: Metastable Defects (1996) (0)
r4VALUA710N AND VERIFICATION OF EPITAXIAL PROCESS SEQUENCE FOR SILICON SOLAR-CELL PRODUCTION (2010) (0)
Degenerate Materials: Heavily Doped Semiconductors . Viktor I. Fistul'. Translated from the Russian edition (Moscow, 1967) by Albin Tybulewicz. Plenum, New York, 1969. xii + 420 pp., illus. $25. Monographs in Semiconductor Physics, vol. 1. (1969) (0)
Photoinduced Defects in Semiconductors: Photoinduced Defects in Devices (1996) (0)
Carrier-induced mechanism for defect formation in hydrogenated amorphous silicon (1996) (0)
PALLADIUM(II) COMPLEXES OF BENZYLPHOSHINES (I), AN EXAMPLE OF VERY RIGID GEOMETRY AS DETERMINED BY HIGH RESOLUTION PROTON NMR SPECTROSCOPY AT VARIOUS FIELD STRENGTHS (1973) (0)
Photoinduced Defects in Semiconductors: Hydrogenated Amorphous Silicon: Properties of Defects (1996) (0)
Energy future-report of the energy project at the Harvard Business School (1980) (0)
Mechanisms controlling lead atomization in ETAAS in the presence of aluminum and magnesium (1994) (0)
Other Crystalline Materials (1996) (0)
STUDIES ON THE STEREOCHEMISTRY OF POLAR 1,4 ADDITION OF BROMINE TO DIENES, STRUCTURE ASSIGNMENTS FOR DIBROMOCYCLOHEXENES AND DIBROMOHEXENES (1974) (0)
Lead atom formation for graphite furnace atomic absorption spectroscopy (1995) (0)
Photoconductivity and Recombination Processes in Tellurium. (1956) (0)
Thin-film polycrystalline silicon solar cells. Quarterly report No. 2, December 11, 1978-March 10, 1979 (1979) (0)

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What Schools Are Affiliated With David A. Redfield?

David A. Redfield is affiliated with the following schools:

Stanford University