Debdeep Jena

Q: What Schools Are Affiliated With Debdeep Jena

Debdeep Jena is affiliated with the following schools: University of California, Santa Barbara, University of Notre Dame, Cornell University

Debdeep Jena's AcademicInfluence.com Rankings

Debdeep Jena

Engineering

#3987

World Rank

#5136

Historical Rank

Applied Physics

#867

World Rank

#889

Historical Rank

Electrical Engineering

#968

World Rank

#1043

Historical Rank

engineering Degrees

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Engineering

Debdeep Jena's Degrees

PhD Electrical Engineering Cornell University

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Debdeep Jena's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals (2012) (1366)
Broadband graphene terahertz modulators enabled by intraband transitions (2012) (900)
High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (2012) (884)
Two-dimensional semiconductors for transistors (2016) (819)
Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. (2013) (776)
Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. (2013) (640)
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (2010) (610)
Carrier statistics and quantum capacitance of graphene sheets and ribbons (2007) (601)
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014) (427)
High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. (2013) (423)
Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. (2007) (351)
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012) (298)
Anisotropic thermal conductivity in single crystal β-gallium oxide (2014) (286)
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) (279)
Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment. (2015) (261)
Intrinsic electron mobility limits in β-Ga2O3 (2016) (253)
High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions (2007) (252)
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior (2012) (249)
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators. (2012) (239)
Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors (2010) (235)
Charge Scattering and Mobility in Atomically Thin Semiconductors (2013) (229)
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering (2008) (215)
Dislocation scattering in a two-dimensional electron gas (2000) (214)
Graphene Nanoribbon Tunnel Transistors (2008) (208)
Thermally limited current carrying ability of graphene nanoribbons. (2011) (200)
Unique prospects for graphene-based terahertz modulators (2011) (198)
Heat‐Transport Mechanisms in Superlattices (2009) (189)
Tunneling Transistors Based on Graphene and 2-D Crystals (2013) (177)
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (2007) (175)
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy (2012) (173)
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018) (159)
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (2008) (157)
Exfoliated multilayer MoTe2 field-effect transistors (2014) (154)
Single-particle tunneling in doped graphene-insulator-graphene junctions (2011) (148)
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions (2011) (145)
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015) (139)
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown (2015) (136)
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (2010) (133)
Graphene for Reconfigurable Terahertz Optoelectronics (2013) (130)
Polarization Effects in Semiconductors (2008) (125)
Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. (2009) (116)
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy (2017) (115)
Efficient terahertz electro-absorption modulation employing graphene plasmonic structures (2012) (109)
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor (2013) (108)
A new class of electrically tunable metamaterial terahertz modulators. (2012) (106)
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) (2015) (105)
Terahertz imaging employing graphene modulator arrays. (2013) (104)
Effect of Optical Phonon Scattering on the Performance of GaN Transistors (2010) (102)
High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance (2013) (100)
GaN/NbN epitaxial semiconductor/superconductor heterostructures (2018) (96)
High-field transport in two-dimensional graphene (2011) (94)
1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability (2016) (94)
Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions (2008) (93)
2D crystal semiconductors: Intimate contacts. (2014) (92)
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors (2018) (91)
Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. (2007) (90)
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures (2016) (89)
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ (2012) (88)
Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy. (2011) (87)
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation (2011) (85)
Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene (2015) (85)
AlGaN/GaN polarization-doped field-effect transistor for microwave power applications - eScholarship (2004) (84)
Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors (2015) (83)
High-performance photocurrent generation from two-dimensional WS2 field-effect transistors (2014) (83)
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2 (2018) (80)
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020) (80)
Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures (2014) (80)
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design (2010) (79)
Gallium nitride electronics (2013) (79)
Intrinsic Mobility Limiting Mechanisms in Lanthanum-Doped Strontium Titanate (2014) (77)
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy (2016) (76)
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates a (2013) (72)
SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor (2012) (71)
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells (2018) (71)
Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz (2013) (69)
Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors (2015) (69)
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth (2015) (69)
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs (2011) (67)
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures (2016) (64)
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes (2013) (64)
N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping (2011) (63)
Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. (2016) (63)
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0 . 05 Ω · mm (2012) (62)
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors (2014) (62)
Hot phonon effect on electron velocity saturation in GaN: A second look (2007) (62)
Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter. (2017) (61)
A computational study of metal-contacts to beyond-graphene 2D semiconductor materials (2012) (58)
The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system (2019) (56)
2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current (2018) (56)
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (2002) (55)
Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene (2012) (55)
Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz (2013) (55)
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors (2012) (54)
Compositional modulation and optical emission in AlGaN epitaxial films (2006) (54)
Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures (2017) (53)
Phototransistors: High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012) (2012) (53)
Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs (2013) (52)
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes (2018) (51)
SymFET: A proposed symmetric graphene tunneling field effect transistor (2012) (50)
Thermal conductivity of crystalline AlN and the influence of atomic-scale defects (2019) (50)
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy (2011) (49)
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy (2015) (49)
Localized surface phonon polariton resonances in polar gallium nitride (2015) (48)
Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases (2002) (48)
1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy (2017) (47)
GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 (2015) (46)
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes (2020) (46)
Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN (2006) (46)
Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes (2017) (46)
Interband Tunneling in 2D Crystal Semiconductors (2013) (45)
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 (2018) (45)
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes (2017) (45)
Electron mobility in graded AlGaN alloys (2006) (44)
Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect (2006) (44)
Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV (2019) (44)
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition (2012) (44)
Conduction band offset at the InN∕GaN heterojunction (2007) (43)
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy (2012) (42)
Electron Transport in III–V Nitride Two‐Dimensional Electron Gases (2001) (42)
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs (2019) (41)
Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene (2014) (41)
Quantum transport in graphene nanoribbons patterned by metal masks (2010) (41)
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions (2011) (41)
Power Amplification at THz via Plasma Wave Excitation in RTD-Gated HEMTs (2013) (41)
Strained GaN quantum-well FETs on single crystal bulk AlN substrates (2016) (40)
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas (2018) (40)
Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions (2008) (39)
Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering (2010) (39)
Polarization-engineered removal of buffer leakage for GaN transistors (2010) (39)
Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts (2012) (39)
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors (2013) (39)
Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire (2021) (39)
Ferroelectric transition in compressively strained SrTiO3 thin films (2015) (38)
Hole mobility of strained GaN from first principles (2019) (38)
Dipole scattering in polarization induced III–V nitride two-dimensional electron gases (2000) (36)
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz (2012) (35)
Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy (2006) (34)
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020) (34)
Charge transport in non-polar and semi-polar III-V nitride heterostructures (2012) (33)
Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio (2011) (33)
Resonant terahertz generation from InN thin films. (2007) (32)
High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications (2010) (32)
MBE growth of few-layer 2H-MoTe 2 on 3D substrates (2017) (32)
Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting. (2019) (32)
Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates (2014) (32)
Activation of buried p-GaN in MOCVD-regrown vertical structures (2018) (31)
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN (2014) (31)
New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes (2017) (31)
Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts (2016) (31)
Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel (2018) (31)
Enhancement-Mode InAIN/AIN/GaN HEMTs With 10―12 A/mm Leakage Current and 1012 ON/OFF Current Ratio (2011) (31)
Photocurrent polarization anisotropy of randomly oriented nanowire networks. (2008) (31)
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes (2019) (30)
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3 (2017) (30)
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy (2020) (29)
Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions (2015) (29)
Quantum and classical scattering times due to charged dislocations in an impure electron gas (2002) (28)
Ultrathin CdSe nanowire field-effect transistors (2006) (27)
On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors (2013) (27)
Hot phonons in Si-doped GaN (2006) (27)
Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski–Krastanov mode (2016) (26)
Threshold Voltage Control in Al 0.72 Ga 0.28 N/AlN/GaN HEMTs by Work-Function Engineering (2010) (26)
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy (2011) (26)
Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy (2016) (26)
Dipole scattering in highly polar semiconductor alloys (2004) (26)
Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels (2015) (26)
A New Holistic Model of 2-D Semiconductor FETs (2018) (25)
Thickness dependence of superconductivity in ultrathin NbS2 (2019) (25)
Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide (2012) (25)
Charged basal stacking fault scattering in nitride semiconductors (2010) (24)
1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation (2019) (24)
Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors (2010) (24)
Effect of high-K dielectrics on charge transport in graphene (2009) (24)
Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure (2008) (23)
Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors (2019) (23)
Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN (2019) (23)
Tailoring the carrier mobility of semiconductor nanowires by remote dielectrics (2007) (23)
Evidence of hot electrons generated from an AlN∕GaN high electron mobility transistor (2008) (23)
Perspectives of TFETs for low power analog ICs (2012) (22)
Enhanced Terahertz Detection in Resonant Tunnel Diode-Gated HEMTs (2012) (22)
Intrinsic electron mobility limits in bGa 2 O 3 (2016) (22)
Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs (2008) (21)
Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy (2020) (21)
In‐situ X‐ray photoelectron spectroscopy of trimethyl aluminum and water half‐cycle treatments on HF‐treated and O3‐oxidized GaN substrates (2012) (21)
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices (2020) (21)
Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021) (20)
Fully transparent field-effect transistor with high drain current and on-off ratio (2020) (20)
Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax > 200/220 GHz (2012) (20)
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy (2019) (19)
Low temperature AlN growth by MBE and its application in HEMTs (2015) (18)
Measurement of ultrafast dynamics of photoexcited carriers inβ-Ga2O3by two-color optical pump-probe spectroscopy (2018) (18)
Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy (2019) (18)
2.3 nm barrier AlN/GaN HEMTs with insulated gates (2008) (18)
Optimum Bandgap and Supply Voltage in Tunnel FETs (2014) (18)
Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation (2014) (18)
Subcritical barrier AlN/GaN E/D‐mode HFETs and inverters (2011) (17)
Epitaxial niobium nitride superconducting nanowire single-photon detectors (2020) (17)
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study inβ-Ga2O3 (2020) (17)
Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane (2012) (17)
Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors (2011) (17)
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs (2014) (17)
High-quality InN films on GaN using graded InGaN buffers by MBE (2016) (17)
Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities (2007) (16)
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃ (2020) (16)
Top-down AlN/GaN enhancement- & depletion-mode nanoribbon HEMTs (2009) (16)
Two-dimensional heterojunction interlayer tunnel FET (Thin-TFET): From theory to applications (2016) (16)
Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions (2018) (16)
Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3 (2021) (15)
Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning (2020) (15)
Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2 (2012) (15)
GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current (2019) (15)
Evolution of superconductivity in ultrathin NbS2 (2018) (15)
Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN (2019) (15)
Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs (2008) (15)
Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors (2008) (15)
Vertical fin Ga2O3 power field-effect transistors with on/off ratio >109 (2017) (15)
Spin scattering by dislocations in III-V semiconductors (2004) (15)
Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements (2012) (14)
Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms (2019) (14)
Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices (2019) (14)
Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire (2021) (14)
High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers (2010) (14)
Short‐period AlN/GaN p‐type superlattices: hole transport use in p‐n junctions (2010) (14)
Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures (2019) (14)
Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy (2017) (13)
Effect of growth conditions on the conductivity of Mg doped p‐type GaN by Molecular Beam Epitaxy (2008) (13)
AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz (2014) (13)
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications (2019) (13)
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface (2019) (13)
Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates (2020) (13)
Hydrodynamic instability of confined two-dimensional electron flow in semiconductors (2009) (12)
600 V GaN vertical V-trench MOSFET with MBE regrown channel (2017) (12)
A theory for the high-field current-carrying capacity of one-dimensional semiconductors (2009) (12)
Stark-effect scattering in rough quantum wells (2011) (12)
Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide (2011) (12)
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes (2015) (12)
Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment (2014) (12)
Energy-Efficient Clocking Based on Resonant Switching for Low-Power Computation (2014) (11)
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation (2013) (11)
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. (2019) (11)
Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts (2014) (11)
Electrical Noise and Transport Properties of Graphene (2013) (11)
First-principles study of high-field-related electronic behavior of group-III nitrides (2014) (11)
Demonstration of GaN HyperFETs with ALD VO2 (2016) (11)
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2021) (11)
Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas (2019) (11)
Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors (2011) (11)
MBE-Grown Ultra-shallow AlN/GaN HFET Technology (2007) (10)
Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3 (2017) (10)
Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures (2001) (10)
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX (2020) (10)
Degradation of GaN-on-GaN vertical diodes submitted to high current stress (2018) (10)
Structural and transport properties of InN grown on GaN by MBE (2008) (10)
Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO2 (2018) (10)
MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates (2021) (10)
Hydrodynamic instability of one-dimensional electron flow in semiconductors (2007) (10)
High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1−x)2O3 ( 0≤x≤1) (2021) (10)
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films (2021) (10)
High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers (2012) (10)
GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers (2019) (10)
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells (2017) (9)
Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering (2010) (9)
Current-carrying Capacity of Long & Short Channel 2D Graphene Transistors (2008) (9)
Nitride LEDs based on quantum wells and quantum dots (2014) (9)
Intra- and inter-conduction band optical absorption processes in β-Ga2O3 (2020) (9)
Sub-60 mV/decade steep transistors with compliant piezoelectric gate barriers (2014) (9)
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes (2018) (9)
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements (2020) (8)
Atomic Structure of Thin MoSe2 Films Grown by Molecular Beam Epitaxy (2014) (8)
High field transport properties of 2D and nanoribbon graphene FETs (2009) (8)
GaN vertical nanowire and fin power MISFETs (2017) (8)
Polarization-induced zener tunnel junctions in wide-bandgap heterostructures (2009) (8)
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity (2021) (8)
Graphene nanoribbon FETs for digital electronics: experiment and modeling (2013) (8)
Temperature influence on hydrodynamic instabilities in a one-dimensional electron flow in semiconductors (2010) (8)
Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic (2012) (8)
Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)] (2014) (7)
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2 (2019) (7)
High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers (2021) (7)
Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N (2019) (7)
Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region (2014) (7)
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing (2014) (7)
Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures (2021) (7)
High-mobility two-dimensional electron gases at AlGaN/GaN heterostructures grown on GaN bulk wafers and GaN template substrates (2019) (7)
Determination of the Mott-Hubbard gap in GdTiO3 (2015) (7)
Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures (2020) (7)
Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look (2020) (7)
Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties (2022) (7)
Synthesized multiwall MoS 2 nanotube and nanoribbon field-effect transistors (2015) (7)
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits (2015) (7)
All‐Epitaxial Bulk Acoustic Wave Resonators (2020) (7)
Exceptional tunability of THz reflectance in graphene structures (2012) (7)
Spin–orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory (2020) (6)
Dielectric-environment mediated quantum screening of two-dimensional electron gas (2011) (6)
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration (2018) (6)
Resonant Tunneling Transport in Polar III-Nitride Heterostructures (2019) (6)
Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas (2011) (6)
FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION (2011) (6)
Investigation of hot electrons and hot phonons generated within an AlN/GaN high electron mobility transistor (2009) (6)
Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells (2014) (6)
A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current (2022) (6)
Resonant clocking circuits for reversible computation (2012) (6)
In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors (2021) (6)
Transistor Switches Using Active Piezoelectric Gate Barriers (2015) (6)
Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs (2013) (6)
GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced $\delta$ -Doping (2014) (6)
Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes (2016) (6)
Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates (2016) (6)
Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018 (2018) (6)
4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC (2009) (6)
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping (2021) (5)
Nitride LEDs and Lasers with Buried Tunnel Junctions (2019) (5)
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review (2020) (5)
First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior (2012) (5)
Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates (2020) (5)
Enhanced efficiency in bottom tunnel junction InGaN blue LEDs (2021) (5)
Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers (2014) (5)
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy. (2020) (5)
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes (2019) (5)
Exfoliated MoTe2 field-effect transistor (2013) (5)
Blue (In,Ga)N light-emitting diodes with buried n+–p+ tunnel junctions by plasma-assisted molecular beam epitaxy (2018) (5)
Temperature-dependent Lowering of Coercive Field in 300 nm Sputtered Ferroelectric Al0.70Sc0.30N (2021) (5)
Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy (2019) (5)
Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices (2008) (5)
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs (2014) (5)
Unexplored MBE growth mode reveals new properties of superconducting NbN (2020) (5)
Multilayer transition-metal dichalcogenide channel Thin-Film Transistors (2012) (4)
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts (2020) (4)
Multi-level Analog Programmable Graphene Resistive Memory with Fractional Channel Ferroelectric Switching in Hafnium Zirconium Oxide (2022) (4)
Enhancement of punch-through voltage in GaN with buried p-type layer utilizing polarization-induced doping (2018) (4)
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning (2022) (4)
Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction (2021) (4)
Engineering the Berreman mode in mid-infrared polar materials. (2020) (4)
Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy (2021) (4)
Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics (2020) (4)
Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures (2021) (4)
New physics in GaN resonant tunneling diodes (2019) (4)
Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping (2014) (4)
N-polar GaN/AlN resonant tunneling diodes (2020) (4)
Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs (2019) (4)
Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates (2021) (4)
Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs (2011) (4)
Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study (2015) (4)
Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN (2021) (4)
Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors (2016) (4)
High field transport in graphene (2010) (4)
GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping (2013) (4)
Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers (2018) (4)
A PHYSICS-BASED TUNNELING MODEL FOR SB-HETEROSTRUCTURE BACKWARD TUNNEL DIODE MILLIMETER-WAVE DETECTORS (2011) (3)
High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates (2015) (3)
Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures (2022) (3)
High Internal Quantum Efficiency from AlGaN-Delta-GaN Quantum Well at 260 nm (2020) (3)
Quantum transport in patterned graphene nanoribbons (2009) (3)
Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET) (2014) (3)
(Invited) The Resurgence of III-N Materials Development: AlInN HEMTs and GaN-on-Si (2011) (3)
Ultrathin AlN/GaN Heterojunctions by MBE for THz Applications (2006) (3)
Sub-Boltzmann transistors with piezoelectric gate barriers (2013) (3)
Tunable graphene-based metamaterial terahertz modulators (2013) (3)
Multiferroic LuFeO3 on GaN by molecular-beam epitaxy (2020) (3)
Gigahertz operation of epitaxial graphene transistors (2009) (3)
First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC (2016) (3)
Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature (2017) (3)
Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride (2014) (3)
AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps (2014) (3)
Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire (2013) (3)
Sub-10 nm epitaxial graphene nanoribbon FETs (2011) (3)
Erratum: “Interband tunneling in two-dimensional crystal semiconductors” [Appl. Phys. Lett. 102, 132102 (2013)] (2013) (3)
Development of Microwave and Terahertz Detectors Utilizing AlN/GaN High Electron Mobility Transistors (2010) (3)
Nanomembrane β-Ga2O3 high-voltage field effect transistors (2013) (3)
Ultrathin all-binary AlN / GaN based high-performance RF HEMT Technology (2008) (3)
Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices (2019) (3)
Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments (2011) (3)
GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced δ-Doping (2014) (3)
Influence of Metal Contact on the Operation and Scalability of Graphene Field-Effect-Transistors (2011) (3)
Realization of the First GaN Based Tunnel Field-Effect Transistor (2018) (3)
Magnetotransport and superconductivity in InBi films grown on Si(111) by molecular beam epitaxy (2019) (3)
Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light emitting diodes (2018) (3)
Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 ( 0≤x≤1) (2022) (3)
Epitaxial superconducting tunnel diodes for light detection applications (2020) (3)
Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz (2011) (2)
Structural Properties of (Sn,Mn)Se 2 - a New 2D Magnetic Semiconductor with Potential for Spintronic Applications (2016) (2)
250 nm deep UV LED using GaN/AlN heterostructures on bulk AlN substrates (2016) (2)
Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz (2021) (2)
Bottom tunnel junction blue light-emitting field-effect transistors (2020) (2)
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates (2022) (2)
Observation of strong many-body effects in thin InN films grown on GaN buffer layers (2006) (2)
High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films (2022) (2)
RF performance projections for 2D graphene transistors: Role of parasitics at the ballistic transport limit (2011) (2)
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN (2003) (2)
Infrared reflectivity spectroscopy of optical phonons in short-period AlGaN/GaN superlattices (2007) (2)
Tunnel FETs with tunneling normal to the gate (2013) (2)
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): A New Magnetoelectric Memory (2019) (2)
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction (2020) (2)
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions (2022) (2)
75 Years of the Device Research Conference—A History Worth Repeating (2018) (2)
X-band epi-BAW resonators (2022) (2)
High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes (2010) (2)
Gallium nitride tunneling field-effect transistors exploiting polarization fields (2020) (2)
GaN lateral PolarSJs: Polarization-doped super junctions (2014) (2)
Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes (2021) (2)
GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy (2008) (2)
High speed devices (2009) (2)
Molecular Beam Epitaxy Regrowth of Ohmics in Metal-face AlN/GaN Transistors (2010) (2)
Polarization Induced Graded AlGaN p-n Junction grown by MBE (2008) (2)
Molecular beam epitaxy of polar III-nitride resonant tunneling diodes (2021) (2)
High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes (2008) (2)
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz (2013) (2)
Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs (2010) (2)
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga 2 O 3 (2017) (2)
(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity (2019) (2)
A surface-potential based compact model for GaN HEMTs incorporating polarization charges (2012) (2)
Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures (2022) (2)
Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design (2020) (2)
Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy (2022) (2)
Tunnel-junction p-contact sub-250 nm deep-UV LEDs (2017) (2)
Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes (2022) (2)
Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy (2022) (2)
Electron transport properties of low sheet‐resistance two‐dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE (2008) (2)
HZO-based FerroNEMS MAC for In-Memory Computing (2022) (2)
Electron transport in 2D crystal semiconductors and their device applications (2014) (2)
Molecular Beam Epitaxy of Layered Material Superlattices and Heterostructures (2014) (1)
Ferroelectric Transition in Compressively Strained Epitaxial SrTiO$_{3}$ (2015) (1)
S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE (2017) (1)
Direct Imaging on Strain Relaxation of MBE-grown Single Phase alpha-(Al,Ga) 2 O 3 on m-sapphire Substrate in Atomic Resolution Using Scanning Transmission Electron Microscopy (2020) (1)
Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers (2005) (1)
Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques (2019) (1)
GaN tunnel switch diodes (2016) (1)
Ultra-scaled AlN/GaN enhancement-& depletion-mode nanoribbon HEMTs (2009) (1)
Vertical Schottky barrier diodes fabricated on un-intentionally doped and Sn-doped (−201) bulk β-Ga2O3 substrates (2016) (1)
Properties for Thermally Conductive Interfaces with Wide Band Gap Materials (2022) (1)
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV (2022) (1)
Advanced concepts in Ga2O3 power and RF devices (2021) (1)
High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE (2017) (1)
Infrared-active phonon modes and static dielectric constants in α-(AlxGa1−x)2O3 (0.18 ≤ x ≤ 0.54) alloys (2022) (1)
Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures (2021) (1)
Stabilization of α-Ga2O3 on m-plane α-Al2O3 by Plasma-Assisted MBE (2019) (1)
Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric (2021) (1)
Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss (2021) (1)
Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures (2022) (1)
Quantum Physics of Semiconductor Materials and Devices (2022) (1)
Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures (2015) (1)
Interband tunneling transport in 2-dimensional crystal semiconductors (2013) (1)
Intrinsic mobility limits in polarization induced two-dimensional electron gases (2001) (1)
Electrical noise in graphene FETs (2011) (1)
Novel logic devices based on 2D crystal semiconductors: Opportunities and challenges (2013) (1)
Intrinsically Switchable GHz Ferroelectric ScAlN SAW Resonators (2022) (1)
SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz (2021) (1)
20 Graphene Transistors (2012) (1)
Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning (2022) (1)
Ultrafast nonlinear phonon response of few-layer hexagonal boron nitride (2021) (1)
Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays (2017) (1)
Fermi level tunability of a novel 2D crystal: Tin Diselenide (SnSe2) (2016) (1)
Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates (2016) (1)
High field transport in 2D graphene (2010) (1)
High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates (2022) (1)
Quantum Transport in Epitaxial Ultra Wide Bandgap Aluminum Gallium Oxide Tunnel Heterostructures (2020) (1)
Stabilization of α-Ga 2 O 3 on m-plane α-Al 2 O 3 by Plasma-Assisted MBE (2019) (1)
Localized surface phonon polariton resonators in GaN (2015) (1)
Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes (2019) (1)
Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy (2022) (1)
Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors (2011) (1)
Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] (2021) (1)
β-(AlxGa1−x )2O3 and doped β-Ga2O3 films (2021) (0)
Anti-Stokes Raman scattering of photoluminescence phonon replica in gan heterostructures: An effective technique for Probing Hot Phonons (2007) (0)
Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors (2003) (0)
Graphene-on-GaN Hot Electron Transistor (2017) (0)
Temperature Dependence of the Emission Spectrum of GaN Defect Single-Photon Emitters (2022) (0)
A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range (2022) (0)
Operation regimes of double gated graphene nanoribbon FETs (2009) (0)
High-Performanc with R (2013) (0)
Introducing the spiked p-n junction for tunnel devices and current gain (2016) (0)
(Invited) GaN Power Electronics and Associated Fundamental Limits (2020) (0)
Intra- and Inter-Conduction Band Optical Absorption Processes in $\beta$-Ga$_2$O$_3$ (2020) (0)
Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements (2021) (0)
Trapping and Detrapping Mechanisms in <italic></italic>-GaO Vertical FinFETs Investigated by Electro-Optical Measurements (2020) (0)
A Single-Device Embodiment of XNOR Logic: TransiXNOR (2019) (0)
Temperature-dependent photoluminescence studies of GdTiO$_{3}$ thin films (2013) (0)
Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation (2022) (0)
15-GHz Epitaxial AlN FBARs on SiC Substrates (2023) (0)
Carrier transport studies in graphene-base Hot Electron Transistor (2018) (0)
Probing Ultrafast Dynamics of Anharmonically Coupled Phonons in Few-Layer Hexagonal Boron Nitride (2022) (0)
Molecular Beam Epitaxy and Magnetotransport of InBi and InNBi Crystals for High Spin-Orbit Interaction (2018) (0)
Graphene and 2D crystal tunnel transistors (2015) (0)
Quantum Physics of Electron Statistics, Ballistic Transport, and Photonics in Semiconductor Nanostructures (2018) (0)
Field-effect transistors and photodetectors based on solution-synthesized nanowires (2006) (0)
Unified ballistic transport relation for anisotropic dispersions and generalized dimensions (2020) (0)
Infrared dielectric functions and Brillouin zone center phonons of $\alpha$-Ga$_2$O$_3$ compared to $\alpha$-Al$_2$O$_3$ (2021) (0)
A Surface-Potential Based Compact Model for GaN HEMTs Directly Incorporating Polarization Charges (2013) (0)
Normal-Metal/Graphene/Superconductor Tunnel Junctions (2009) (0)
Response to “Comment on ‘Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions’” [Appl. Phys. Lett.101, 256103 (2012)] (2012) (0)
Erratum: “Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions” [Appl. Phys. Lett. 99, 193504 (2011)] (2011) (0)
Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor (2008) (0)
Self-assembly and properties of domain walls in BiFeO 3 layers grown via molecular-beam epitaxy (2019) (0)
Efficient Terahertz Generation from Nanolayers to Microlayers of InN (2007) (0)
Stacked Quantum Wire AlN/GaN HEMTs (2012) (0)
246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode (2017) (0)
N-polar GaN p-n junction diodes with low ideality factors (2022) (0)
Deformation potential scattering from dislocations in III-V nitride quantum wells (2001) (0)
Antiferromagnetic Spin Orientation and Magnetic Domain Structure in Epitaxially Grown MnN Studied Using Optical Second-Harmonic Generation (2022) (0)
Electric field induced migration of native point defects in Ga2O3 devices (2023) (0)
Electron Device Potential of 2D Crystal Semiconductors (2014) (0)
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors (2022) (0)
THz devices based on 2D electron systems (2015) (0)
Invited) THz Devices Based on 2D Electron Systems (2015) (0)
MBE-Grown Ultrashallow AlN/GaN HEMT Technology (2007) (0)
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer (2022) (0)
International Conference of Nitride Semiconductors (ICNS-7) (2008) (0)
Tuning the Conductivity of Semiconductor Nanostructures by Dielectric Engineering (2007) (0)
Integration of superconducting NbN thin films with III-Nitride semiconductors (2018) (0)
Invited) Gallium Oxide Based Materials and Devices (2016) (0)
A Tight-Binding Model for Gallium Oxide: The Newest Ultra Wide-Bandgap Semiconductor (2020) (0)
Infrared dielectric functions and Brillouin zone center phonons of α−Ga2O3 compared to α - Al2O3 (2022) (0)
0 Dislocation scattering in a two dimensional electron gas (2000) (0)
InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy (2008) (0)
Ultrafast Optical Measurement of Defect Dynamics in β-Ga 2 O 3 using Supercontinuum Pump-Probe Spectroscopy. (2020) (0)
Anisotropic charge transport in non-polar GaN quantum wells (QWs): (2010) (0)
Perspectives of graphene SymFETs for THz applications (2013) (0)
Two dimensional electron transport in modulation-doped In 0 . 53 Ga 0 . 47 As / AlAs 0 . 56 Sb 0 . 44 ultrathin quantum wells (2014) (0)
Superconductivity and Magnetotransport of MBE grown~Nb$_{\mathrm{2}}$N/SiC and Nb$_{\mathrm{2}}$N/AlN Heterostructures (2017) (0)
1 2 A pr 2 00 0 Dipole scattering in polarization induced two-dimensional electron gases (2000) (0)
Scattering in Rough Quantum Wells (2011) (0)
Efficient terahertz generation from nanolayers to microlayers of InN (2007) (0)
Device characteristics of single-layer graphene FETs grown on copper (2010) (0)
High-Mobility Two-Dimentional Electron Gases at Al x Ga 1-x N/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy (2020) (0)
Synchronized Plasma Wave Resonances in Ultrathin-Membrane GaN Heterostructures (2018) (0)
Preface: phys. stat. sol. (c) 5/6 (2008) (0)
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes (2019) (0)
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $\alpha$-(AlGa)$_2$O$_3$ on m-plane sapphire (2020) (0)
Polarization Anisotropy , Frequency Dependent Emission , and Transport Properties of Dielectrophoretically Aligned CdSe Nanowire Arrays (2006) (0)
Ultrascaled AIN/GaN HEMT Technology for mm-wave RT Applications (2011) (0)
Thermal conductivity reduction by interface roughness in AlN$_{x}$-GaN$_{y}$ superlattices. (2008) (0)
GaN-Based FETs with Laterally-Gated Multi-2DEG Channels for High Power and Linearity (2019) (0)
Two-pulse photoluminescence correlation technique for studying ultrafast carrier dynamics in deep-UV few monolayer thick nitride quantum wells (2017) (0)
Dominant Electron Scattering Mechanisms in SrTiO$_{3}$ (2014) (0)
Deep Ultra-Violet Emission from GaN/AlN matrix grown by Plasma-Assisted Molecular Beam Epitaxy (2013) (0)
Scanning SQUID microscopy of ion-gel-gated MoS 2 (2018) (0)
Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3 (2021) (0)
Epitaxy of GaN on Silicon (2016) (0)
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates (2023) (0)
Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs (2013) (0)
Molecular beam epitaxial growth of MoSe 2 on graphite , CaF 2 and graphene (2016) (0)
MBE growth of 2 H-MoTe 2 and 1 T ’-MoTe 2 on 3 D substrates MBE growth of 2 H-MoTe 2 and 1 T ’-MoTe 2 on 3 D substrates (2017) (0)
Ga2O3 Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental Validation (2019) (0)
Next-generation of III-nitride light emitters based on buried tunnel junction design (2022) (0)
Buried tunnel junction for p-down nitride laser diodes (2019) (0)
Tunnel injection GaN/AlN quantum dot UV LED (2012) (0)
Interband absorption in single layer hexagonal boron nitride (2011) (0)
Invited) Layered Semiconductor Materials and Device Applications (2016) (0)
Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters (2022) (0)
doc 4-NM AlN BARRIER ALL BINARY HFET WITH SiN x GATE DIELECTRIC (2009) (0)
Ultra-high Temperature Growth of Layered Hexagonal Boron Nitride on Sapphire by Molecular Beam Epitaxy (2019) (0)
Electrical Noise and Transport Properties of Graphene (2013) (0)
Wafer-Scale Graphene Nanoribbon Transistor Technology (2012) (0)
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects (2014) (0)
Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy (2022) (0)
In quest of the next information processing substrate (2017) (0)
MBE deep-UV LEDs on bulk AlN substrates (2016) (0)
Hot and cold phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well (2008) (0)
$\gamma$-phase Inclusions as Common Defects in Alloyed $\beta$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $\beta$-Ga$_2$O$_3$ Films (2020) (0)
Effect of Surface-optical Phonons on the Charge Transport in Wrap-gated Semiconducting Nanowire Field-effect Transistors (2010) (0)
Isotope Engineering of GaN for Boosting Transistor Speeds (2019) (0)
Large Signal Results at 6 GHz and record ft/fmax for AlN/GaN/AlN HEMTs (2020) (0)
Single-Sweep vs. Banded Characterizations of a D-band Ultra-Low-Loss SiC Substrate-Integrated Waveguide (2022) (0)
Field-Tunable Topological Phase Transitions and Spin-Hall Effects in 2D Crystals (2020) (0)
Kinetic Inductance in Ballistic TransportJashan Singhal 1 and Debdeep Jena 1,2,3 1 School of Electrical and Computer Engineering, Cornell University2 Department of Materials Science and Engineering, Cornell University3 Kavli Institute at Cornell for Nanoscale Science, Cornell (2020) (0)
Magnetoresistance and second harmonic Hall measurement of Pt/CoFe 2 O 4 bilayers (2020) (0)
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates (2022) (0)
Introduction and Overview (2019) (0)
Polarization-engineered N-face III–V nitride quantum well LEDs (2010) (0)
(Invited) Recent Progress in GaN Power Devices with BV > 1200 V (2016) (0)
Investigation of Mechanism for Highly Efficient Terahertz Generation in InN Thin Films (2007) (0)
Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy (2014) (0)
Gallium Oxide Materials and Devices (2020) (0)
Compensating defects in high Al content Al0.85Ga0.15N films grown on an AlN substrate (2022) (0)
Hurdles and Progress towards Device Applications of Graphene and Layered Materials (2016) (0)
Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs (2021) (0)
MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates (2015) (0)
Blue (In, Ga)N Light-Emitting Diodes with Buried $\boldsymbol{n}^{+}-\boldsymbol{p}^{+}$ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy (2019) (0)
Ultrafast dynamics of gallium vacancy charge states in β−Ga2O3 (2021) (0)
1230 V b-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 lA/cm (2019) (0)
GaN/AlN p-channel HFETs with I<inf>max</inf> 420 mA/mm and ~20 GHz f<inf>T</inf> / f<inf>MAX</inf> (2020) (0)
Nearly free electron model and k · p method calculations of electronic band structure of wurtzite InN (2006) (0)
of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their eect (2009) (0)
2.2 W/mm at 94 GHz in AlN/GaN/AlN HEMTs on SiC (2023) (0)
Graphene electrically reconfigurable patterns for THz imaging applications (2013) (0)
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy (2023) (0)
Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures (2023) (0)
Low-frequency noise in graphene FETs (2012) (0)
Electron transport in two-dimensional electron gases of nitride heterostructures (2001) (0)
Tunneling Devices of Two-Dimensional Crystal Semiconductor beyond Si Technology (2013) (0)
Ultra-scaled GaN HEMTs with AlN barrier (2011) (0)
2D Crystal Semiconductors New Materials for GHz-THz Devices (2015) (0)
Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes (2017) (0)
Investigation of High Frequency Noise and Power in AlGaN/GaN HEMTs (2007) (0)
Superconductivity and Magnetotransport of MBE grown Nb 2 N/SiC and Nb 2 N/AlN Heterostructures (2017) (0)
Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties (2022) (0)
VERTICAL GAN TRANSISTORS: THE EFFECTIVE SOLUTIONS FOR POWER ELECTRONICS (2017) (0)
GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla (2020) (0)
MBE-grown buffer with high breakdown voltage for nitride HEMTs on GaN template (2009) (0)
Au/Graphene/Nb Tunnel Structures (2010) (0)
Layered two-dimensional selenides and tellurides grown by molecular beam epitaxy (2020) (0)
Electron Transport in Graphene based 2 D Crystals for Novel Electronic Devices (2014) (0)
Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions (2017) (0)
Tunneling devices over van der Waals bonded hetero-interface (2017) (0)
Dislocation spin scattering: Opportunity for Spin-Interconnects by Heteroepitaxy (2005) (0)

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