Diana Huffaker
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American physicist
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Physics
Diana Huffaker's Degrees
- PhD Physics University of California, Santa Barbara
- Masters Physics University of California, Santa Barbara
- Bachelors Physics University of California, Santa Barbara
Why Is Diana Huffaker Influential?
(Suggest an Edit or Addition)According to Wikipedia, Diana Huffaker FIEEE, FOSA is a physicist working in compound semiconductors optical devices. She is the current Sêr Cymru Chair in Advanced Engineering and Materials and Science Director of the Institute of Compound Semiconductors is based within Cardiff University. Her work includes compound semiconductor epitaxy, lasers, solar cells, optoelectronic devices, plasmonics, and Quantum dot and nanostructured materials.
Diana Huffaker's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- 1.3 μm room-temperature GaAs-based quantum-dot laser (1998) (709)
- Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers (1994) (563)
- Low-threshold oxide-confined 1.3-μm quantum-dot laser (2000) (282)
- Strain relief by periodic misfit arrays for low defect density GaSb on GaAs (2006) (250)
- GaAs nanopillar-array solar cells employing in situ surface passivation (2013) (228)
- GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response (2007) (198)
- Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers (2007) (175)
- InGaAs/GaAs quantum dot lasers (1998) (168)
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser (1999) (156)
- Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots (1998) (154)
- Patterned radial GaAs nanopillar solar cells. (2011) (139)
- Low threshold half-wave vertical-cavity lasers (1994) (118)
- Bottom-up photonic crystal lasers. (2011) (113)
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers (1999) (113)
- Spontaneous Emission from Planar Microstructures (1994) (112)
- Surface plasmon-enhanced nanopillar photodetectors. (2011) (100)
- Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors (1996) (99)
- Quantum dimensionality, entropy, and the modulation response of quantum dot lasers (2000) (92)
- Interfacial misfit array formation for GaSb growth on GaAs (2009) (90)
- Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture (1997) (90)
- Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature. (2017) (87)
- III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs (2006) (87)
- Formation trends in quantum dot growth using metalorganic chemical vapor deposition (2003) (84)
- 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer (2004) (83)
- Spontaneous emission and threshold characteristics of 1.3-/spl mu/m InGaAs-GaAs quantum-dot GaAs-based lasers (1999) (80)
- Spontaneous lifetime control in a native-oxide-apertured microcavity (1999) (80)
- Growth mechanisms of highly mismatched AlSb on a Si substrate (2005) (78)
- Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon (2006) (77)
- InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers (2003) (75)
- Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition (2004) (74)
- Direct-bandgap epitaxial core-multishell nanopillar photovoltaics featuring subwavelength optical concentrators. (2013) (74)
- Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors (1997) (73)
- Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. (2009) (71)
- Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links. (2016) (70)
- Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels (1998) (69)
- Self-organized formation of GaSb/GaAs quantum rings. (2008) (68)
- Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots (2000) (67)
- Topological Insulator Laser Using Valley-Hall Photonic Crystals (2020) (66)
- Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate (2008) (66)
- Hybrid conjugated polymer solar cells using patterned GaAs nanopillars (2010) (65)
- Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials (2007) (65)
- Quantum dot resonant cavity photodiode with operation near 1.3 /spl mu/m wavelength (1997) (62)
- InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy (2010) (61)
- Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters (2001) (60)
- LOW THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS BASED ON HIGH CONTRAST DISTRIBUTED BRAGG REFLECTORS (1997) (59)
- Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well (2007) (59)
- Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity (2000) (57)
- Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers (2000) (54)
- Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots (2006) (52)
- Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids (2007) (52)
- Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots (2001) (52)
- 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser (1998) (51)
- Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation (1996) (50)
- Optical absorption cross section of quantum dots (2004) (50)
- Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition (2005) (50)
- Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator. (2017) (50)
- Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate (2006) (50)
- GaSb/GaAs type-II quantum dots grown by droplet epitaxy (2009) (46)
- GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays (2015) (46)
- Quantum ring formation and antimony segregation in GaSb∕GaAs nanostructures (2008) (45)
- Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region (1997) (45)
- Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers (1999) (45)
- Size effects in small oxide confined vertical‐cavity surface‐emitting lasers (1996) (45)
- Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation. (2019) (45)
- Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb (2007) (44)
- Cavity-induced antiguiding in a selectively oxidized vertical-cavity surface-emitting laser (1998) (44)
- Eigenmode confinement in the dielectrically apertured Fabry-Perot microcavity [VCSEL] (1997) (44)
- Strong interband transitions in InAs quantum dots solar cell (2012) (42)
- Selective area growth of InAs quantum dots formed on a patterned GaAs substrate (2004) (41)
- Very-low-threshold index-confined planar microcavity lasers (1995) (41)
- Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. (2012) (41)
- TRANSVERSE MODE BEHAVIOR IN NATIVE-OXIDE-DEFINED LOW THRESHOLD VERTICAL-CAVITY LASERS (1994) (40)
- 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots (2013) (40)
- Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm (1999) (40)
- Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate (2005) (40)
- High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition. (2015) (40)
- InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature (2000) (39)
- Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes (2019) (39)
- Low-threshold continuous-wave surface emitting lasers with etched void confinement (1994) (38)
- Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering. (2012) (38)
- Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser (1999) (37)
- GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays (2006) (37)
- High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light. (2016) (36)
- Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires. (2010) (36)
- Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m (2007) (36)
- RESONANT CAVITY LIGHT EMITTING DIODE WITH AN ALXOY/GAAS REFLECTOR (1995) (36)
- 1.54 lm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays (2007) (35)
- Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active region (1997) (35)
- Complex emission dynamics of type-II GaSb/GaAs quantum dots (2009) (34)
- InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode. (2018) (34)
- Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy (1997) (34)
- Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates (2012) (32)
- Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars (2011) (32)
- Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array (2007) (31)
- Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions. (2018) (31)
- Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids (2007) (31)
- Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction (2011) (30)
- Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110) (2017) (30)
- Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. (2010) (30)
- Tuning quantum dot luminescence below the bulk band gap using tensile strain. (2013) (29)
- Enhanced spontaneous emission using quantum dots and an apertured microcavity (1999) (29)
- Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots (1998) (29)
- Room-Temperature Quantum Emitter in Aluminum Nitride (2020) (28)
- Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting (2014) (28)
- Quantum correlations in the nonperturbative regime of semiconductor microcavities. (2000) (28)
- Controlled spontaneous emission in room‐temperature semiconductor microcavities (1992) (28)
- Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures (2012) (28)
- Record pulsed power demonstration of a 2 μm GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate (2009) (27)
- Threshold temperature dependence of lateral-cavity quantum-dot lasers (1998) (27)
- State filling in InAs quantum-dot laser structures (2004) (27)
- Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers (2012) (27)
- GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells (2013) (26)
- Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy (2012) (25)
- Submilliamp 1.3 /spl mu/m vertical-cavity surface-emitting lasers with threshold current density of <500A/cm/sup 2/ (1997) (25)
- Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition (2006) (25)
- Comparison of vertical-cavity surface-emitting lasers with half-wave cavity spacers confined by single- or double-oxide apertures (1997) (25)
- Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems (2012) (25)
- Temperature dependence of the transverse lasing mode in vertical‐cavity lasers (1995) (25)
- Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface (2011) (24)
- Strongly coupled slow-light polaritons in one-dimensional disordered localized states (2013) (24)
- Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials (1998) (24)
- Coulomb effects in type‐II Ga(As)Sb quantum dots (2009) (23)
- Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well (2008) (22)
- Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness (2017) (22)
- Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity (1997) (22)
- Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence (2015) (22)
- Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors. (2017) (22)
- Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon (2010) (20)
- Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes (2015) (20)
- InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors (2016) (20)
- Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack (2008) (20)
- Lasing characteristics of low threshold microcavity lasers using half‐wave spacer layers and lateral index confinement (1995) (19)
- Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP (2018) (19)
- Localized strain reduction in strain-compensated InAs∕GaAs stacked quantum dot structures (2007) (19)
- Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots (1998) (19)
- Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth (2008) (18)
- Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition (2003) (18)
- Photoconductive gain in patterned nanopillar photodetector arrays (2010) (18)
- Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids (2007) (18)
- Enhanced InAs nanopillar electrical transport by in-situ passivation (2013) (18)
- Mode dependence on mirror contrast in Fabry-Perot microcavity lasers (1994) (18)
- Steam oxidation of GaAs (1996) (18)
- Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces (2014) (18)
- Ultralow-threshold cryogenic vertical-cavity surface-emitting laser (2000) (18)
- Fabrication of Self-Aligned Enhancement-Mode MOSFETs With Gate Stack (2008) (17)
- Defect dissolution in strain-compensated stacked InAs /GaAs quantum dots grown by metalorganic chemical vapor deposition (2005) (17)
- Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms (2018) (17)
- Growth of CdS nanowire crystals: Vapor–liquid–solid versus vapor–solid mechanisms (2013) (17)
- Very low threshold oxide-confined 1.3 /spl mu/m GaAs-based quantum dot laser (2000) (17)
- Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation (1996) (17)
- 3D nanopillar optical antenna photodetectors. (2012) (16)
- Improved quantum dot stacking for intermediate band solar cells using strain compensation (2014) (16)
- Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure (2013) (16)
- Temperature dependence of stacking faults in catalyst-free GaAs nanopillars (2013) (16)
- Optical transition pathways in type-II Ga(As)Sb quantum dots (2009) (16)
- Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots (2016) (16)
- High spatial coherence vertical-cavity surface-emitting laser using a long monolithic cavity (1997) (16)
- Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure (2008) (16)
- Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars (2020) (16)
- Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors (1997) (16)
- Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers (1994) (16)
- Continuous-Wave, Room-Temperature Operation of 2-µm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates (2009) (15)
- Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates. (2017) (15)
- Threshold characteristics of planar and index‐guided microcavity lasers (1995) (15)
- Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy (2012) (15)
- Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium (2018) (15)
- Sealing AlAs against oxidative decomposition and its use in device fabrication (1996) (15)
- Ring and stripe oxide‐confined vertical‐cavity surface‐emitting lasers (1996) (14)
- Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy (2006) (14)
- Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots (2009) (13)
- High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer (2005) (13)
- Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources (2016) (13)
- Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping (2009) (13)
- Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy (2018) (13)
- GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell (2017) (13)
- Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator (2017) (13)
- Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots (2013) (13)
- Composite axial/core-shell nanopillar light-emitting diodes at 1.3 μm (2012) (13)
- Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition (2014) (12)
- Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications (2001) (12)
- High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells (2016) (12)
- Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement (2013) (12)
- Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching (2013) (12)
- III–V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms (2019) (12)
- Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar (2011) (11)
- Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p–n heterojunctions (2018) (11)
- Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation (2016) (11)
- Transverse and temporal mode dependence on mirror contrast in microcavity lasers (1995) (11)
- Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes (2010) (11)
- Exciton spectral splitting near room temperature from high contrast semiconductor microcavities (1997) (11)
- Electronic characteristics of the interfacial states embedded in “buffer-free” GaSb/GaAs (001) heterojunctions (2009) (10)
- The effect of passivation on different GaAs surfaces (2013) (10)
- Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode (2000) (10)
- Spontaneous lifetime control of quantum dot emitters in apertured microcavities (1999) (10)
- Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications (2017) (10)
- The Physics of High-Efficiency Thin-Film III-V Solar Cells (2015) (10)
- Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si ( 100 ) substrate (2005) (10)
- Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. (2018) (9)
- Spontaneous coupling to planar and index‐confined quasimodes of Fabry–Pérot microcavities (1995) (9)
- Selective-area InAsSb Nanowires on InP for 3 – 5 μm Mid-wavelength Infrared Optoelectronics (2017) (9)
- Measurement of electro-optic coefficients of 1.3/spl mu/ m self-assembled InAs=GaAs quantum dots (2007) (9)
- Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers (2004) (9)
- Erratum: GaAs nanopillar-array solar cells employing in situ surface passivation (2013) (9)
- Recent trends in 8–14 μm type-II superlattice infrared detectors (2021) (9)
- Absorption dynamics of type-II GaSb/GaAs quantum dots (2017) (9)
- Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate (2006) (9)
- Hybrid dielectric/metal reflector for low threshold vertical-cavity surface-emitting lasers (1997) (9)
- Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap (2014) (9)
- Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm (2018) (9)
- Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study. (2011) (9)
- Onset of GaSb/GaAs quantum dot formation (2006) (9)
- Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices (2013) (8)
- Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation (1994) (8)
- Axial diffusion barriers in near-infrared nanopillar LEDs. (2014) (8)
- Controlled Formation and Dynamic Wulff Simulation of Equilibrium Crystal Shapes of GaAs Pyramidal Structures on Nanopatterned Substrates (2010) (8)
- Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode (2009) (8)
- Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots (2018) (8)
- InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation. (2010) (8)
- Optical memory using a vertical-cavity surface emitting laser (1991) (8)
- Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics (2020) (8)
- Hybrid Integrated Photomedical Devices for Wearable Vital Sign Tracking. (2020) (7)
- Integrated and spectrally selective thermal emitters enabled by layered metamaterials (2020) (7)
- Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition (2013) (7)
- Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays (2014) (7)
- Gain-switching in a vertical-cavity laser with high-contrast mirrors (1995) (7)
- Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates (2007) (7)
- Abnormal photoluminescence for GaAs/Al 0.2 Ga 0.8 As quantum dot - ring hybrid nanostructure grown by droplet epitaxy (2018) (7)
- Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection (2019) (7)
- A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires (2018) (7)
- Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII (2011) (6)
- Oxide-confined VCSELs with quantum well and quantum dot active regions (1997) (6)
- Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector (1998) (6)
- Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures (2016) (6)
- Anisotropic electro-optic effect on InGaAs quantum dot chain modulators. (2013) (6)
- Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices (2013) (6)
- Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy (2014) (6)
- Characterization of GaSb photodiode for gamma-ray detection (2016) (6)
- Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate (2014) (6)
- Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser (1997) (5)
- Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection (2019) (5)
- Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb (2017) (5)
- Optical Properties of Strain‐balanced InAs/InAs1‐xSbx Type‐II Superlattices (2011) (5)
- Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors (2021) (5)
- Superradiance in semiconductors (1999) (5)
- High-Speed InAs Quantum-Dot Electrooptic Phase Modulators (2011) (5)
- Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy (2017) (5)
- Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires (2019) (5)
- Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities (2001) (5)
- Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells (2017) (5)
- Influence of cavity tuning on the transverse mode in vertical-cavity lasers (1995) (5)
- Guiding and antiguiding effects in epitaxially regrown vertical-cavity surface-emitting lasers (1998) (4)
- High-perfomance patterned arrays of core-shell GaAs nanopillar solar cells with in-situ ingap passivation layer (2012) (4)
- 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers (2010) (4)
- Analytical model for impact ionization in 3D multiplication regions (2014) (4)
- Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP (2021) (4)
- Novel monolithic integration of Ill-Sb materials on Si substrates (2008) (4)
- Coulomb effect inhibiting spontaneous emission in charged quantum dot (2010) (4)
- Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers (2018) (4)
- Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry (2020) (4)
- Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots (2015) (4)
- GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface (2015) (4)
- Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation (2019) (4)
- First-order phase transition in a laser threshold (1992) (4)
- Room temperature continuous wave lasing in nanopillar photonic crystal cavities (2012) (4)
- Reduced cavity loss for ultra-low threshold vertical cavity surface emitting lasers (1999) (4)
- High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer (2020) (4)
- Arsenic-induced etched nanovoids on GaSb (100) (2007) (4)
- Effect on spontaneous emission of quantum well placement in a short vertical cavity (1992) (4)
- Quantum Well and Quantum Dot Light Emitters Confined in Oxide-Semiconductor Microcavities (1998) (3)
- Novel mid-infrared metamaterial thermal emitters for optical gas sensing (2018) (3)
- Hybrid Solar Cells: Materials, Interfaces, and Devices (2014) (3)
- Electrical and structural characterization of a single GaSb∕InAs∕GaSb quantum well grown on GaAs using interface misfit dislocations (2008) (3)
- Dependence of wavelength control on dielectric structure for vertical-cavity surface-emitting lasers (1997) (3)
- The Dependence of Alloy Composition of InGaAs Inserts in GaAs Nanopillars on Selective-Area Pattern Geometry (2013) (3)
- Self-catalyzed vapor-liquid-solid growth of InP/InAsP core-shell nanopillars (2011) (3)
- Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric (2008) (3)
- GaSb QW-based 'buffer-free' vertical LED monolithically embedded within a GaAs cavity using interfacial misfit arrays (2006) (3)
- Bottom-up photonic crystal cavities formed by III-V nanopillar arrays (2011) (3)
- Characterization of Interfacial Misfit Array Formation for GaSb Growth on GaAs by Transmission Electron Microscopy (2009) (3)
- Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si (2006) (3)
- 1.3 /spl mu/m quantum dot lasers with single and stacked active layers (1999) (3)
- Front Matter: Volume 7224 (2009) (2)
- Room temperature spontaneous emission in five‐micron‐long Fabry–Pérot vertical cavities (1993) (2)
- InAs/InAsP Core/shell Nanowire Photodiode on a Si Substrate (2016) (2)
- Front Matter: Volume 6481 (2007) (2)
- InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications. (2022) (2)
- Ultrafast dynamics of type-II GaSb/GaAs quantum dots (2015) (2)
- Reflection spectromicroscopy for the design of nanopillar optical antenna detectors (2014) (2)
- Correlation of surface topography and coating damage with changes in the responsivity of silicon PIN photodiodes (1991) (2)
- Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors (1997) (2)
- 1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays (2007) (2)
- Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition (2002) (2)
- LASERS, OPTICS, AND OPTOELECTRONICS 061101 Direct modulation of excited state quantum dot lasers (3 pages) (2009) (2)
- Template-assisted synthesis of CdS nanocrystal arrays in chemically inhomogeneous pores using a vapor–solid mechanism (2015) (2)
- Quantum Dots, Particles, and Nanoclusters IV (2017) (2)
- Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling (2007) (2)
- Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell (2014) (2)
- MOCVD-grown InAs/GaAs quantum dots (2003) (2)
- Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples (2022) (2)
- Oxide confinement: A revolution in VCSEL technology (1997) (2)
- Front Matter: Volume 7947 (2011) (2)
- Energy distributions of carriers in quantum dot laser structures (2004) (2)
- III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber (2021) (2)
- Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration (2011) (2)
- Chiral Light-Matter Interaction in Dielectric Photonic Topological Insulators (2018) (2)
- Low Threshold Current Operation of Stacked InAs/GaAs Quantum Dot Lasers with GaP Strain-Compensation Layers (2006) (2)
- Emerging devices (2016) (2)
- Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy (2017) (2)
- Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding (2015) (2)
- High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas (2018) (1)
- GaSb/InGaAs quantum dot-well solar cells (2013) (1)
- Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays (2006) (1)
- Toward Stationary Concentrator Photovoltaic Panels (2016) (1)
- Towards intermediate-band solar cells with InAs/AlAsSb quantum dots (2013) (1)
- Toward quantum entanglement in a quantum-dot nanocavity (1999) (1)
- Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate (2009) (1)
- EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS (1998) (1)
- Low threshold vertical-cavity lasers based on native-oxidation of alas (1994) (1)
- Oxide-apertured VCSELS with use of oxide/GaAs distributed Bragg reflectors and tunnel injection (1997) (1)
- Electrochemical polymerization of PEDOT on catalyst-free patterned GaAs nanopillars for high efficiency hybrid photovoltaics 37th IEEE photovoltaic specialists conference (2011) (1)
- Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44 (2020) (1)
- Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance? (1999) (1)
- Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A. (2001) (1)
- Complex emission dynamics from InGaAs/GaAs core-shell nanopillars (2015) (1)
- Effects of steam oxidation on a single In0.20Ga0.80As quantum well in a half-wave microcavity VCSEL (1997) (1)
- Photonics based on carbon nanotubes (2013) (1)
- Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers (1999) (1)
- Selective-area nanowire photodetectors: from near to mid-wavelength infrared (Conference Presentation) (2018) (1)
- Monolithic integration of Sb-based photopumped lasers on Si (2005) (1)
- Native oxide technology for III-V optoelectronic devices (1998) (1)
- Carrier confinement in InGa(Al)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures (1998) (1)
- Demonstration of GaSb QW-based "Buffer-Free" LED on GaAs Substrate (2006) (1)
- Nanopillar optical antenna nBn detectors for subwavelength infrared pixels (2015) (1)
- Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices (1998) (1)
- Numerical analysis of nanowire surface recombination using a three-dimensional transient model (2018) (1)
- GaSb/InGaAs Quantum Dot-Well Hybrid Structure for Solar Cell (2013) (1)
- High performance 1.3 /spl mu/m vertical-cavity surface-emitting lasers with oxygen-implanted confinement regions and wafer-bonded mirrors (1997) (1)
- InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs (1999) (1)
- Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition (2006) (1)
- Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (2020) (1)
- Photonic crystal defect microcavities with indium arsenide quantum dots (2000) (1)
- Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors (2000) (1)
- Mapping Charge Recombination and the Effect of Point-Defect Insertion in GaAs Nanowire Heterojunctions (2021) (1)
- Front Matter: Volume 8271 (2012) (1)
- Resonant-cavity photodetectors: performance and functionality (1997) (1)
- Bias-free telecommunication-compatible plasmonic photoconductive terahertz source (Conference Presentation) (2019) (1)
- Interfacial Misfit Dislocation Arrays (2012) (1)
- In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition (2005) (1)
- High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays. (2019) (1)
- A quantum leap in laser emission (1999) (1)
- Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability (2021) (1)
- Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells (2017) (1)
- GaSb on GaAs interfacial misfit solar cells (2016) (0)
- Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP (2022) (0)
- Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation) (2018) (0)
- Experimental matrix study of leakage current in nanopillar-based devices towards high-efficiency photovoltaics (2013) (0)
- Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions (2020) (0)
- Predicting the response of lead selenide thin film photoconductor in circuits with a series load resistor (2023) (0)
- Next‐Generation GA Photovoltaics (2015) (0)
- 1.65 μm buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature (2007) (0)
- Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms (Phys. Status Solidi RRL 3/2019) (2019) (0)
- Quantum dot active regions for extended-wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers (1999) (0)
- Wetting layer entropy effect on the modulation response of self-organized quantum dot lasers (2000) (0)
- Computational study of the Effect of Sulfur Passivation on GaAs Heterojunction Solar Cells (2013) (0)
- Cascadability of optically latching vertical-cavity surface-emitting laser (1992) (0)
- GaAs/Al/sub 0.3/Ga/sub 0.7/As multiquantum well dual focus Fresnel lens-modulator (2000) (0)
- 1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K (2007) (0)
- Title Complex emission dynamics of type-II GaSb / GaAs quantum dots (2018) (0)
- Growth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar Cells (2013) (0)
- Purcell effect and the bias-free pulse response of vertical-cavity surface-emitting lasers (1999) (0)
- Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters (1999) (0)
- Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well (2007) (0)
- パターン形成の平面GaAs(100)基板上にDWELL構造を含むInAs量子ドットの光ルミネセンス研究 (2009) (0)
- Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid (2009) (0)
- Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers (1997) (0)
- High-bit-rate pump-probe experiments on bundled single-walled carbon nanotubes for 1.55µm telecom signal regeneration (2010) (0)
- Coupled Quantum Dots and Photonic Crystals for Nanophotonic Devices (2006) (0)
- Nanoheteroepitaxy of Heavily N-Doped GaAs Nanostubs on SiO2-Patterned Si(100) Substrate Using Molecular Beam Epitaxy (2014) (0)
- Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures (2018) (0)
- Observation of enhanced spontaneous decay in 1-μm-aperture microcavities with InGaAlAs quantum dot active regions (1999) (0)
- 1.6 μm Emission from InAs Quantum Dots grown on a GaAs Substrate using an AlGaAsSb Metamorphic Buffer (2002) (0)
- Ultrafast carbon nanotubes optical properties for high-bit-rate telecommunications applications (2010) (0)
- 1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers (2003) (0)
- Dependence of Large Signal Response on the Transverse Mode Structure in Vertical-Cavity Lasers (1995) (0)
- Controlled Crystal Structure in Patterned InAs Quantum Dot Formation By Selective Area MOCVD (2006) (0)
- Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures (2018) (0)
- Crystallographic anisotropy in InAs quantum dashes on GaAs (2003) (0)
- Plasmonic nanowire optical to terahertz converter operating at telecommunication wavelengths (Conference Presentation) (2018) (0)
- Patterned InAs quantum dot formation (2004) (0)
- Front Matter: Volume 9373 (2015) (0)
- Hybrid solar cells using GaAs nanopillars (2010) (0)
- Low threshold Al/sub x/O/sub y/-confined VCSELs and densely-packed arrays (1996) (0)
- Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources (2017) (0)
- Hydrogen-implanted 1.3 /spl mu/m vertical-cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AIAs mirrors (1997) (0)
- Temperature dependence of lasing characteristics for 1.3 /spl mu/m GaAs-based quantum dot lasers (1999) (0)
- 1.27 /spl mu/m resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs (1997) (0)
- Hybrid Photovoltaics Based on Patterned Arrays of GaAs Nanopillar/ Polymer Heterojunctions (2012) (0)
- Direct-bandgap nanopillar photovoltaics based on patterned catalyst-free epitaxy (2013) (0)
- Low Threshold Room Temperature CW 1.3 µm Single-Bonded Vertical-Cavity Surface-Emitting Lasers Using Oxygen-implanted Confinement (1997) (0)
- Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation) (2017) (0)
- Time-resolved spectroscopy of the ground state and excited state of 1.3-micron-wavelength InGaAs/GaAs quantum dots (2001) (0)
- Surface plasmon enhanced nanopillar photodetector array (2011) (0)
- Abstract Submitted for the 4CF06 Meeting of The American Physical Society (2006) (0)
- Optimization of surface passivation for suppressing leakage current in GaSb PIN devices (2020) (0)
- Effect of InGaP strain‐compensation layers in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by MOCVD (2005) (0)
- 3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode (2020) (0)
- Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers (1993) (0)
- 2:40pm NS+BI-MoA3 Properties of InP/InAs/InP Core-Shell Nanopillars Grown by Metalorganic Vapor-Phase Epitaxy, V. Evoen, L. (2009) (0)
- UNIVERSITY OF CALIFORNIA Los Angeles Improvement in Spectroscopic Performance of Gallium Antimonide/Aluminum Arsenide Antimonide Heterostructure Energy-sensitive Detectors by Aluminum Oxide Surface Passivation A thesis submitted in partial satisfaction of the requirements (2018) (0)
- Quantum correlations in a semiconductor microcavity (2001) (0)
- Introduction to the Issue on Optoelectronic Materials and Processing and Nanostructures (2005) (0)
- Front Matter: Volume 6902 (2008) (0)
- Low Threshold Microcavity Lasers using a Half-Wave Cavity Spacer (1995) (0)
- Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED (2000) (0)
- Ground state lasing at 1.07 /spl mu/m from InGaAs/GaAs QD VCSEL (1999) (0)
- Ultrafast carrier dynamics in size-controlled, self-assembled, InGaAs/GaAs quantum dots (2001) (0)
- Normal mode coupling in a 3D semiconductor nanocavity (2000) (0)
- Improved Quantum Dot Stacking for Solar Cells Using Strain Compensation (2014) (0)
- Mode confinement in the ultralow threshold Fabry-Perot microcavity laser (1997) (0)
- Strong coupling between single quantum dot and localized mode in photonic crystal waveguide (2012) (0)
- Wavelength control through lateral device size in a 2/spl times/2 vertical-cavity surface-emitting laser array fabricated using selective oxidation (1996) (0)
- Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots (2000) (0)
- GaSb on GaAs solar cells Grown using interfacial misfit arrays (Conference Presentation) (2017) (0)
- Nanopillar Photonic Crystal Lasers for Tb/s Transceivers on Silicon (2015) (0)
- InAs / AlAsSb Self-Assembled Quantum Dots for Intermediate Band Solar Cells (2013) (0)
- Type II Strain Layer Superlattices (SLS's) grown on GaAs Substrates (2007) (0)
- Front Matter: Volume 8634 (2013) (0)
- High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation) (2020) (0)
- Silicon Photonics: Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics (Adv. Funct. Mater. 30/2020) (2020) (0)
- Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays (2019) (0)
- Correction to Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links. (2016) (0)
- Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator (2017) (0)
- Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission (2019) (0)
- Growth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar CellsGrowth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar Cells (2013) (0)
- Inducing Electrically-Active Defects in a Gallium Arsenide Nanowire with an Electron Beam (2019) (0)
- Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells (2015) (0)
- Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance? (1999) (0)
- 1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots (2003) (0)
- Nanopillar optical antenna photodetectors (2012) (0)
- Structural and Optical Properties of InAs / AlAsSb Self-Assembled Quantum Dots for Intermediate Band Solar Cells (2012) (0)
- Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP (2018) (0)
- Fabrication of metal gate/high-k GaAs MOS capacitors on Ge/Si1-xGex/Si substrates (2007) (0)
- Development of InAs x Sb 1-x / AlAsSb Quantum Dots for Intermediate Band Solar Cells (2012) (0)
- Absorption-Enhanced Organic Photovoltaic By Incorporating Metallic Nano Pyramid Particles (2014) (0)
- Sealing AlAs against oxidative decomposition and its use in device fabrication (1996) (0)
- Normal-Mode Coupling of Excitons and Photons in Laterally Confined Nanocavities - Toward the Quantum Statistical Limit (2001) (0)
- Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates (2007) (0)
- Quantum Dot Modulators (2006) (0)
- Dynamic of the optical matrix element in type II GaAsSb/GaAs quantum dots for laser applications (2009) (0)
- Ab-Initio calculations of binding energy of In and Ga adatoms on three GaAs(111)A surface reconstructions (2011) (0)
- Quantum Dots for GaAs-Based Long Wavelength Edge-Emitting and Vertical-Cavity Surface-Emitting Lasers (1999) (0)
- Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding (1997) (0)
- Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance? (1999) (0)
- Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates (2008) (0)
- Photoluminescence investigation for InAs quantum dots capped by GaAs1-xSbx layer with different Sb-composition (Conference Presentation) (2018) (0)
- Dielectric apertures for mode control in low threshold and single mode vertical-cavity surface-emitting lasers (1998) (0)
- Confined modes of two dimensional photonic crystal defect cavities with Indium Arsenide quantum dots (2001) (0)
- Towards Low Cost Thermophotovoltaics: Growth of III-Sb Cells on GaAs Using Interfacial Misfit Arrays (2014) (0)
- Monolithic, Defect-Free III-V on Si using Self-Assembled AlSb Quantum Dot Nucleation (2004) (0)
- A Hybrid Nanostructure for Solar Cells with GaSb Quantum Dots Coupled to an InGaAs Quantum Well (2014) (0)
- How nucleation can cause stacking faults on the GaAs (111) B surface: A DFT study (2013) (0)
- GaSb-based photon counting gamma-ray detectors (2016) (0)
- Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation) (2017) (0)
- abrication of High-Pac rtical Cavity S urface-Emittin Arrays Using Selective Oxidati (1996) (0)
- InGaAdGaAs Quantum Dot Lasers (1998) (0)
- Temperature-dependent carrier relaxation and recombination in 1.3-micron InGaAs/GaAs quantum dots (2000) (0)
- Oxide-confined verticle-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance? (1999) (0)
- Front Matter: Volume 7610 (2010) (0)
- GaSb on GaAs interfacial misfit solar cells (2017) (0)
- Theoretical Analysis of AlAs 0 . 56 Sb 0 . 44 Single Photon Avalanche Diodes with High Breakdown Probability (2021) (0)
- Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities (2011) (0)
- 1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer (2008) (0)
- Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices (2023) (0)
- High-efficiency nanopillar solar cells employing wide-bandgap surface recombination barriers (2014) (0)
- Type-II GaSb/InAlAs quantum dots grown on InP (001) substrate by droplet epitaxy (Conference Presentation) (2019) (0)
- Optical Properties of Stranski-Krastanow and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Emitters - (2006) (0)
- Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD (2008) (0)
- Lasing modes in highly confined semiconductor microcavities (1997) (0)
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