Donald C. Reynolds
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Chemistry Mathematics
Donald C. Reynolds's Degrees
- PhD Materials Science and Engineering Stanford University
- Masters Materials Science and Engineering Stanford University
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(Suggest an Edit or Addition)Donald C. Reynolds's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy (2002) (1199)
- Electrical properties of bulk ZnO (1998) (756)
- Valence-Band Ordering in ZnO (1999) (497)
- Optically pumped ultraviolet lasing from ZnO (1996) (490)
- Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals (1998) (430)
- Defect Donor and Acceptor in GaN (1997) (362)
- Production and annealing of electron irradiation damage in ZnO (1999) (315)
- Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN (1997) (303)
- Fine structure on the green band in ZnO (2001) (268)
- Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO (2005) (230)
- Production of nitrogen acceptors in ZnO by thermal annealing (2002) (192)
- Photovoltaic effect in cadmium sulfide crystals (1954) (188)
- Exciton Spectrum of ZnO (1966) (182)
- Zinc oxide materials for electronic and optoelectronic device applications (2011) (179)
- Zeeman Effects in the Edge Emission and Absorption of ZnO (1965) (167)
- Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO (2000) (146)
- Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO (1998) (144)
- Remote hydrogen plasma doping of single crystal ZnO (2004) (129)
- Free-exciton energy spectrum in GaAs (1976) (96)
- Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy (1997) (94)
- Exciton Structure in Photoconductivity of CdS, CdSe, and CdS: Se Single Crystals (1963) (89)
- Photoluminescence identification of ∼77‐meV deep acceptor in GaAs (1982) (87)
- Deep‐center hopping conduction in GaN (1996) (82)
- Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy (1996) (81)
- Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN (2000) (79)
- Method for Growing Large CdS and ZnS Single Crystals (1958) (76)
- High-Quality, Melt-Grown ZnO Single Crystals (2004) (70)
- Energy Model for Edge Emission in Cadmium Sulfide (1960) (69)
- Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures (1984) (60)
- Photoluminescence measurements from the two polar faces of ZnO (2000) (59)
- Excitons: Their Properties and Uses (1981) (59)
- Single Synthetic Zinc Sulfide Crystals (1950) (57)
- Polariton and Free-Exciton-Like Photoluminescence in ZnO (2001) (53)
- Excited Terminal States of a Bound Exciton-Donor Complex in ZnO (1969) (52)
- Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy (1985) (51)
- Some Optical Properties of Group II–VI Semiconductors (II) (1965) (50)
- Growth of ZnO Single Crystals (1967) (47)
- Photoluminescence of GaN grown by molecular- beam epitaxy on a freestanding GaN template (2001) (45)
- Crystal Growth Mechanism in Cadmium Sulfide Crystals (1958) (43)
- Point Defect Characterization of GaN and ZnO (1999) (41)
- Spin-Orbit Splitting in CdS: Se Single Crystals (1962) (40)
- Identification of the G 5 and G 6 free excitons in GaN (2000) (40)
- Double-Carrier Injection and Negative Resistance in CdS (1964) (39)
- Optical properties of ZnO crystals containing internal strains (1999) (38)
- Strain Variation with Sample Thicknes s in GaN Grown by Hydride Vapor Phase Epitaxy (2000) (36)
- On the Properties of Single Cubic Zinc Sulfide Crystals (1954) (35)
- Dislocations in Two Types of CdS Crystals (1960) (35)
- Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes (2000) (35)
- Optical Properties of ZnO (2011) (33)
- Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy (2000) (32)
- Edge Emission and Zeeman Effects in CdS (1963) (31)
- Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells (1986) (30)
- Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy (1981) (29)
- Edge Emission in Zinc Selenide Single Crystals (1961) (28)
- Single Synthetic Cadmium Sulfide Crystals (1952) (28)
- High Quality Hydrothermal ZnO Crystals (1998) (28)
- Temperature dependence of sharp line photoluminescence in GaAsAl0.25Ga0.75As multiple quantum well structures (1985) (26)
- Strong biexcitonic effects and exciton-exciton correlations in ZnO (2003) (26)
- Mechanism for Photovoltaic and Photoconductivity Effects in Activated CdS Crystals (1954) (26)
- Edge Emission and Magneto-Optical Effects in CdSe (1967) (25)
- Properties of Single Cadmium Sulfide Crystals (1955) (25)
- Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy (1986) (24)
- Change in Structure of Blue and Green Fluorescence in Cadmium Sulfide at Low Temperatures (1960) (23)
- Observation of discrete donor-acceptor pair spectra in MBE grown GaAs (1984) (23)
- Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy (1983) (22)
- High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy (1998) (22)
- Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells (1989) (22)
- Donor-Acceptor Pair Recombination Spectra in Cadmium Sulfide Crystals (1969) (22)
- Identification of an ionized-donor-bound-exciton transition in GaN (1997) (22)
- Exciton—LO-Phonon Interaction and the Anti-Stokes Emission Line in CdS (1970) (22)
- Excited States of Bound Exciton Complexes in CdS (1968) (22)
- High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy (1992) (20)
- Free-exciton energy spectrum in InP in a magnetic field (1976) (20)
- Strain splitting of the G 5 and G 6 free excitons in ZnO (1999) (19)
- Bound-Phonon Quasiparticle in CdS (1971) (19)
- Desorption mass spectrometric control of composition during MBE growth of AlGaAs (1993) (17)
- Sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy (1992) (17)
- Refractive index, n, and dispersion, −dn/dλ, of GaAs at 2 K determined from Fabry–Perot cavity oscillations (1987) (17)
- Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy (1985) (17)
- Identification of impurities in GaAs by the magneto‐optical photoluminescent spectroscopy technique (1984) (16)
- Γ-Point Valence-Band Energy Levels in CdS Determined from Excited States of A- and B-Band Excitons (1972) (15)
- Complexes due to donor‐acceptor‐type transitions in GaAs (1980) (15)
- Phonon scattering of excitons and biexcitons in ZnO (2004) (15)
- Edge Emission in CdS Crystals that Show Mechanically Excited Emission (1962) (14)
- Photoluminescence studies of exciton-ionized donor complexes in high pusity epitaxial GaAs (1982) (14)
- Low compensation vapor phase epitaxial gallium arsenide (1983) (14)
- Optical reflectance in GaAs/AlGaAs quantum wells (1986) (13)
- High-resolution photoluminescence studies of GaAs/GaAlAs multi-quantum-well structures grown by molecular beam epitaxy (1986) (13)
- Mechanically-excited emission in cadmium sulfide (1960) (13)
- Excited states of bound exciton complexes in InP (1976) (13)
- Spin Splitting of Donor-Bound Excitons in ZnO Due To Combined Stress and Spin Exchange (1997) (12)
- Excitons in II–VI Compounds (1969) (12)
- Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy (1985) (11)
- Temperature Dependence of Edge Emission in Cadmium Sulfide (1960) (11)
- Shallow donor generation in ZnO by remote hydrogen plasma (2005) (11)
- Photoluminescence studies of the amphoteric behavior of carbon and germanium in GaAs (1982) (11)
- Excited Terminal States of Bound Exciton-Donor Complexes in CdSe (1969) (11)
- Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals (2006) (10)
- Temperature dependence of free excitons in GaN (2002) (10)
- Zeeman studies of photoluminescence of excited terminal states of a bound-exciton-donor complex in GaAs (1975) (10)
- Electrical and Optical Properties of Semi-insulating GaN (1997) (10)
- Evidence for strong spatially localized band-filling effects at interface islands (1997) (10)
- Optical transitions and acceptor binding energies in GaAs/AlxGa1−xAs single quantum well heterostructures grown by molecular beam epitaxy (1985) (10)
- Intensity-reversal in the donor bound exciton luminescence of GaAs (1983) (9)
- Photovoltaic spectra of undoped GaAsAl0.25Ga0.75As multiple quantum well structures: Correlation with photoluminescence (1986) (9)
- Longitudinal Excitons in GaN (2002) (9)
- Study of shallow impurity states in compound semiconductors using high resolution photoluminescence spectroscopy (1985) (9)
- Exciton energy spectrum in GaAs in a magnetic field (1976) (8)
- Properties of a Cadmium Sulfide Photorectifier (1956) (8)
- Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy (1995) (8)
- Near-edge emission of unimplanted and Mg-implanted VPE InP (1981) (8)
- Observation of monolayer fluctuations in the excited states of GaAs-AlxGa1−xAs multiple-quantum-well structures using photocurrent and reflection spectroscopies (1987) (8)
- Etch Pit Studies on ZnS Crystals (1962) (8)
- Phonon replicas associated with donor–bound–excitons in GaN (1998) (8)
- Lifetimes, ionization energies, and discussion of the emission lines in the 1.5040-1.5110-eV range in GaAs (1986) (8)
- Thermal diffusion of lithium acceptors into ZnO crystals (2003) (8)
- Donor‐acceptor‐type complex in GaAs (1978) (8)
- Biexcitons and their dephasing processes in ZnO (2005) (7)
- Impact of the k-linear term on nonlinear optical response of the C-exciton manifold in ZnO (2004) (6)
- Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs‐GaAs quantum wells (1994) (6)
- Radiative transitions associated with two-acceptor—one-donor complexes in epitaxial GaAs and InP (1983) (6)
- Evidence for Shallow Acceptors in GaN (2001) (5)
- Effect of High-Temperature Annealing on Electrical and Optical Properties of Undoped Semi-Insulating GaAs (1998) (5)
- Identification of the tellurium donor at the residual level in GaAs (1983) (5)
- Double acceptor-donor pair lines in cadmium sulfide (1975) (5)
- Biexciton formation and exciton–exciton correlation effects in bulk ZnO (2004) (5)
- Optical absorption of the intersubband transitions in GaAs/Al0.4Ga0.6As multiple quantum wells with superlattice barriers (1993) (4)
- Quantum Yield of a Cadmium Sulfide Photovoltaic Cell (1955) (4)
- Spatially localized band-gap renormalization and band-filling effects in three growth-interrupted multiple asymmetric coupled narrow quantum wells (1996) (4)
- Optical properties of quantum wire superlattices (1992) (4)
- Determination of exciton transition energies and oscillator strengths in AlGaAsGaAs multiple quantum well structures in an electric field using photocurrent spectroscopy (1988) (4)
- Donor-Acceptor Recombination Spectra in CuCl (1980) (4)
- Short wavelength impurity exciton transitions in CdS at 1.2 K (1970) (4)
- Effect of electric field on the sharp photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures (1985) (4)
- Chapter 3 – Electron-Hole Liquid (1981) (4)
- Strain splitting of the Γ5 and Γ6 free excitons in GaN (2002) (4)
- An Overview Of Optical Characterization Of Semiconductor Structures And Alloys (1987) (4)
- Properties of ZnO (2001) (3)
- Sharp line emission spectra from GaAs FET like structures (1978) (3)
- PHONON REPLICAS IN THE PHOTOLUMINESCENCE EMISSION OF ALXGA1-XAS ALLOYS (1995) (3)
- Sensitivity of resonant excitation and photoluminescence excitation measurements to exciton localization effects in GaAs/AlGaAs quantum wells (1992) (3)
- Correlation between resonantly excited magnetic‐field split donor‐bound exciton components with their excited state emission analogues in GaAs (1989) (3)
- Excitation of optical transitions in the InxGa1−xAs‐GaAs quantum well system by the free exciton in the barrier (1993) (3)
- Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures (2003) (3)
- Deconvolution of the light- and heavy-hole free exciton fine structure in AlxGa1-xAsGaAs multi quantum wells using photoluminescence excitation spectroscopy (1988) (2)
- Growth and properties of n- and p-type ZnO (2003) (2)
- EDGE AND IMPURITY EMISSION IN CADMIUM SULFIDE (1959) (2)
- Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs‐GaAs quantum wells (1994) (2)
- Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxy (1986) (2)
- High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence (1997) (2)
- Evidence of multiexciton complexes bound to neutral acceptors in GaAs (1979) (2)
- Ground and excited states associated with donor bound-excitons in high purity GaAs (1996) (2)
- Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures (1993) (2)
- Screening of Excitons in GaN Crystals (1998) (1)
- Determination of Defect Pair Orientation in ZnO (1999) (1)
- Evidence For Strong Spatially Localized Band-filling Effects In Interface Islands For Extremely Low Laser Intensities (1997) (1)
- Identification of the Gamma5 and Gamma6 free excitons in GaN (2000) (1)
- Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC (2005) (1)
- Characterization of an Asymmetric Triangular Multiple Quantum Well, by Variable Angle Spectroscopic Ellipsometry (1989) (1)
- Summary Abstract: Effect of electric field on the exciton transition energies and oscillator strengths of undoped GaAs–AlGaAs quantum well structures determined by photocurrent spectroscopy (1988) (1)
- Observation of the donor‐bound light‐hole free exciton in AlGaAs‐GaAs quantum wells (1990) (1)
- Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs (1986) (1)
- Erratum: Neutral-donor-bound-exciton complexes in ZnO crystals [Phys. Rev. B 57, 12 151 (1998)] (1998) (1)
- Magnetic field dependence of selective pair luminescence in GaAs (1993) (1)
- Chapter 1 – Theoretical Background (1981) (1)
- Chapter 2 – Theory of Excitons (1981) (0)
- Crystal field splitting of defect pair spectra in GaAs (1997) (0)
- Characterization of Semiconductors and Semiconducting Superlattices Using High-Resolution Photoluminescence Spectroscopy (1985) (0)
- Characterization of Gallium Arsenide by Magneto-optical Photoluminescent Spectroscopy (1986) (0)
- Chapter 7 – Interaction of Excitons with Other Systems (1981) (0)
- Optical and Magneto-Optical Properties of Narrow InxGa1−xAs-GaAs Quantum Wells (1992) (0)
- Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates (1995) (0)
- Chapter 5 – Spatial Resonance Dispersion (1981) (0)
- Some Optical Properties of Group IX—VI Semiconductors (I) (1965) (0)
- Characterization of 3-5 compound semiconductor device materials (1980) (0)
- Application of tunable-pulsed-laser selective photoexcitation spectroscopy in MBE-grown GaAs/AlxSa1−xAs superlattices (1985) (0)
- Electrical and optical properties of as-grown and electron-irradiated ZnO (1998) (0)
- Summary Abstract: Optical characterization of interfaces in MBE grown GaAs–GaAlAs multiquantum‐well structures (1985) (0)
- Zeeman electron mass anomaly in InP as determined from orbital and spin splitting of donor 2P levels using high‐resolution photoluminescence spectroscopy (1991) (0)
- Light- and Heavy-Hole Bound Exciton Transitions and Free to Bound Transitions in Ga x Al 1-x As/GaAs Quantum Wells (1989) (0)
- USE OF ELECTRICAL MEASUREMENTS TO DETECT DIFFERENCES AMONG URANIUM TETRAFLUORIDE SAMPLES. Final Report (1952) (0)
- Emission from Excited Terminal States of Bound Exciton Complexes (1969) (0)
- Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics (1991) (0)
- Potential for High Temperature Superconductivity. (1982) (0)
- Characterization of III-V Compound Semiconductor Device Materials. (1984) (0)
- Annealing studies on GaN hydride vapor phase epitaxial layers (1999) (0)
- Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures grown by molecular beam epitaxy (1986) (0)
- Chapter 6 – Bound-Exciton Complexes (1981) (0)
- Characterization of III-V Semiconductors. (1989) (0)
- Shallow Acceptors in GaAs Grown from the Vapour Phase (1997) (0)
- Chapter 8 – Role of Excitons in Materials Technology (1981) (0)
- Layer Thickness Dependence of Strain in GaN grown by HVPE (2001) (0)
- Bound Excitons in Quantum Wells (1991) (0)
- Semiconductor Materials Characterization By High-Resolution Optical Spectroscopy (1981) (0)
- Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique (1998) (0)
- Strain-Induced Splitting of Donor-Bound-Excitons in ZnO due to Exchange Interaction (1997) (0)
- Chapter 4 – Experimental Properties of Intrinsic Fundamental-Gap Excitons (1981) (0)
- Optical Characterization of III-V Semiconductors (1987) (0)
- Identification of valence-band ordering in ZnO by using four-wave mixing (2003) (0)
- Preparation of DC Electroluminescent ZnS Phosphors. (1974) (0)
- Optical Transmission in Iodine Transported α-HgS (1975) (0)
- Complex Magnetic Field Splitting of Double-Acceptor Donor in CdS (1974) (0)
- Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures (2003) (0)
- Novel Ga/AsCl3/H2 Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs (1982) (0)
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What Schools Are Affiliated With Donald C. Reynolds?
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