Eddy Roger Simoen

Eddy Roger Simoen's AcademicInfluence.com Rankings

Eddy Roger Simoen

Engineering

#4197

World Rank

#5375

Historical Rank

Materials Science

#190

World Rank

#192

Historical Rank

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Engineering

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Eddy Roger Simoen's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Germanium-based technologies : from materials to devices (2007) (520)
Radiation Effects in Advanced Semiconductor Materials and Devices (2002) (395)
Origin of NBTI variability in deeply scaled pFETs (2010) (297)
On the flicker noise in submicron silicon MOSFETs (1999) (272)
Explaining the amplitude of RTS noise in submicrometer MOSFETs (1992) (142)
Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium (2005) (124)
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results (2008) (113)
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS (2003) (113)
$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks (2009) (106)
Ion-implantation issues in the formation of shallow junctions in germanium (2006) (105)
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013) (99)
Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness (2004) (97)
NBTI from the perspective of defect states with widely distributed time scales (2009) (95)
P implantation doping of Ge: Diffusion, activation, and recrystallization (2006) (91)
Diffusion, activation, and regrowth behavior of high dose P implants in Ge (2006) (85)
The decrease of ‘‘random telegraph signal’’ noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation (1992) (79)
Shallow Junction Ion Implantation in Ge and Associated Defect Control (2005) (77)
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100) (2009) (71)
Impact strain engineering on gate stack quality and reliability (2008) (71)
Challenges and opportunities in advanced Ge pMOSFETs (2012) (70)
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions (2008) (70)
Random Telegraph Signal: a local probe for single point defect studies in solid-state devices (2002) (70)
Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K (1988) (69)
Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs (2011) (69)
Impact of oxygen related extended defects on silicon diode characteristics (1995) (66)
Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects (2013) (63)
Germanium for advanced CMOS anno 2009: a SWOT analysis (2009) (60)
The kink-related excess low-frequency noise in silicon-on-insulator MOST's (1994) (58)
The low-frequency noise behaviour of silicon-on-insulator technologies (1996) (58)
Millisecond flash lamp annealing of shallow implanted layers in Ge (2009) (56)
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature (2013) (54)
Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs (2013) (53)
Reliability Comparison of Triple-Gate Versus Planar SOI FETs (2006) (52)
Low-frequency noise in silicon-on-insulator devices and technologies (2007) (52)
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks (2006) (51)
Brother Silicon, Sister Germanium (2006) (50)
On the diffusion and activation of ion-implanted n-type dopants in germanium (2009) (50)
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories (2013) (50)
On the diffusion and activation of n-type dopants in Ge (2012) (49)
Geometry Dependence of Total-Dose Effects in Bulk FinFETs (2014) (49)
The behavior of silicon p‐n junction‐based devices at liquid helium temperatures (1991) (48)
Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics (2011) (48)
Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs (2012) (47)
Impact of silicidation on the excess noise behaviour of MOS transistors (1995) (47)
Freeze-out effects on NMOS transistor characteristics at 4.2 K (1989) (47)
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models (2014) (45)
Photoluminescence of bulk germanium (2012) (45)
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016) (44)
Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors (2004) (43)
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS (2015) (42)
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation (2011) (42)
Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization (1998) (41)
Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs (2004) (41)
(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare (2011) (41)
Extraction of the minority carrier recombination lifetime from forward diode characteristics (1995) (40)
Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors (1996) (40)
Low-Frequency Noise Performance of HfO2-Based Gate Stacks (2005) (39)
Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs (2005) (39)
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs (2012) (39)
Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors (2007) (38)
Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs (2012) (38)
Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components (2003) (35)
A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors (2007) (35)
Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation (2007) (35)
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions (2009) (35)
Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors (2003) (34)
Behavior of triple gate Bulk FinFETs with and without DTMOS operation (2011) (34)
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing (2011) (34)
Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates (2006) (34)
Optimized Diode Analysis of Electrical Silicon Substrate Properties (1998) (34)
Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes (2004) (33)
The charge transport in a silicon resistor at liquid-helium temperatures (1990) (33)
Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodes (1996) (32)
Correlation between DLTS-Measurements and the Performance of High Purity Germanium Detectors (1982) (32)
Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices (2016) (32)
Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors (2003) (32)
Study of ohmic contacts to n-type Ge: Snowplow and laser activation (2011) (32)
Metals in germanium (2006) (32)
Extended Defects in Germanium (2009) (32)
Impact of the substrate on the low‐frequency noise of silicon n+p junction diodes (1995) (31)
Formation of germanium shallow junction by flash annealing (2007) (31)
Gate electrode effects on low-frequency (1/ f) noise in p-MOSFETs with high-? dielectrics (2006) (31)
Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness (2001) (31)
Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs (2010) (31)
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack (2007) (31)
Tunneling 1/ f ? noise in 5 nm HfO 2/2.1 nm SiO 2 gate stack n-MOSFETs (2005) (31)
Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme (2014) (31)
Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum (2011) (30)
Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices (2007) (30)
Size dependence of microscopic Hall sensor detection limits. (2009) (30)
Random Telegraph Signals in Semiconductor Devices (2016) (30)
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015) (30)
D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors (1995) (29)
Low frequency noise characterization in n-channel FinFETs (2012) (29)
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance (2019) (29)
Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density (2000) (29)
Low-frequency (1/f) noise behavior of locally stressed HfO/sub 2//TiN gate-stack pMOSFETs (2006) (29)
Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon (2002) (29)
Analytical model for the kink in nMOSTs operating at Liquid Helium Temperatures (LHT) (1990) (29)
Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs (2006) (28)
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers (1993) (28)
Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs (2017) (28)
Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity (2001) (28)
Extended defects in germanium : fundamental and technological aspets (2009) (28)
Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology (2009) (28)
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques (2002) (27)
Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs (1996) (27)
Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM (2012) (27)
Gate Influence on the Layout Sensitivity of $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}\ \hbox{S/D}$ and $\hbox{Si}_{1 - y}\hbox{C}_{y}\ \hbox{S/D}$ Transistors Including an Analytical Model (2008) (26)
The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering (2012) (26)
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures (2017) (26)
Signature and capture cross section of copper-related hole traps in p-type high-purity germanium (1986) (26)
A deep-level transient spectroscopy study of transition metals in n-type germanium (2006) (26)
On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise (2013) (26)
High-temperature performance of state-of-the-art triple-gate transistors (2007) (26)
In Situ Phosphorus Doping of Germanium by APCVD (2006) (26)
Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation (2001) (26)
Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures (2009) (25)
Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements (2013) (25)
What Do We Know about Hydrogen-Induced Thermal Donors in Silicon? (2009) (25)
DLTS of gold impurities in germanium (1987) (25)
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique (2010) (25)
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells (2016) (25)
DLTS of the third acceptor level of substitutional copper in germanium (1989) (25)
Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation. (2021) (25)
Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium (2009) (24)
Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation (2004) (24)
Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation (2010) (24)
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics (2014) (24)
Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium (2006) (24)
Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology (2005) (23)
Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs (2008) (23)
Low-Frequency ( 1 ∕ f ) Noise Performance of n- and p-MOSFETs with Poly- Si ∕ Hf -Based Gate Dielectrics (2006) (23)
On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors (2005) (23)
Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium (2008) (23)
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon (2002) (23)
Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects (2008) (23)
Si versus Ge for future microelectronics (2010) (23)
Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993) (22)
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013) (22)
Record low contact resistivity to n-type Ge for CMOS and memory applications (2010) (22)
High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions (2011) (22)
Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs (1998) (22)
Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon (2000) (22)
Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode (2014) (22)
Anomalous kink-related excess noise in MOSFETs at 4.2 K (1991) (22)
Recent Trends in Bias Temperature Instability (2011) (22)
Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs (2009) (22)
Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs (2012) (21)
Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies (1999) (21)
A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes (2010) (21)
The 1/f/sup 1.7/ noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide (2002) (21)
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs (2008) (21)
Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM (2013) (21)
On the Low-Frequency Noise of pMOSFETs With Embedded SiGe Source/Drain and Fully Silicided Metal Gate (2007) (21)
Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs (2014) (21)
The importance of the internal bulk-source potential on the low temperature kink in NMOSTs (1991) (21)
RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism (2016) (21)
(Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics (2016) (21)
A DLTS Study of SiO2 and SiO2/SiNx Surface Passivation of Silicon (2011) (21)
Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates (2011) (21)
Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface (1999) (20)
Performance and Reliability of Strained-Silicon nMOSFETs With SiN Cap Layer (2007) (20)
Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si (2012) (20)
The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium (2007) (20)
Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor (1991) (20)
1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates (2006) (20)
Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs (2004) (20)
A low-frequency noise study of gate-all-around SOI transistors (1993) (20)
Short-channel radiation effect in 60 MeV proton irradiated 0.13 /spl mu/m CMOS transistors (2003) (20)
Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates? (2009) (19)
Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium (2004) (19)
Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination (2009) (19)
Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors (2014) (19)
The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium (1985) (19)
The Perspectives of Silicon‐on‐Insulator Technologies for Cryogenic Applications (1994) (19)
The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. I. The kink‐related counterclockwise hysteresis regime (1993) (19)
Junctionless versus inversion-mode lateral semiconductor nanowire transistors (2018) (19)
Analytical techniques for electrically active defect detection (2015) (19)
Deep level transient spectroscopy of transition metal impurities in germanium (2007) (19)
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS (2001) (18)
Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions (2011) (18)
Accurate extraction of the diffusion current in silicon p-n junction diodes (1998) (18)
Low-Frequency Noise Characterization of Strained Germanium pMOSFETs (2011) (18)
Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes (2001) (18)
On the impact of the capture rates on the generation/recombination lifetime ratio of a single deep level (1999) (18)
Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate (2005) (18)
Cryogenic operation of FinFETs aiming at analog applications (2009) (18)
Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks (2006) (17)
Electronic properties of titanium and chromium impurity centers in germanium (2009) (17)
Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn. (2016) (17)
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015) (17)
Defect engineering for shallow n‐type junctions in germanium: Facts and fiction (2016) (17)
Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation (2006) (17)
Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates (2005) (17)
Peripheral current analysis of silicon p–n junction and gated diodes (2000) (17)
Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics (2007) (17)
Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells (2012) (17)
Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs (1997) (17)
Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs (2012) (17)
Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C (2000) (17)
On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties (1994) (17)
Germanium doping for improved silicon substrates and devices (2011) (17)
Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective (2018) (16)
Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs (2004) (16)
On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric (2009) (16)
Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs (2003) (16)
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs (2011) (16)
Implantation defects and n-type doping in Ge and Ge rich SiGe (2008) (16)
Process control & integration options of RMG technology for aggressively scaled devices (2012) (16)
Detailed structural and electrical characterization of plated crystalline silicon solar cells (2018) (16)
Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits (2019) (16)
Static and low-frequency noise characteristics of n + p junction diodes fabricated in different silicon substrates (1995) (16)
On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack (2008) (16)
Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs (2009) (16)
Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs (2020) (16)
Low-frequency noise in polysilicon-emitter bipolar transistors (2002) (16)
Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes (2000) (15)
Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions (2006) (15)
Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation (2005) (15)
Sidewall crystalline orientation effect of post-treatments for a replacement metal gate bulk fin field effect transistor. (2013) (15)
DLTS of nickel impurities in germanium (1992) (15)
1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor (2013) (15)
Parameter Extraction of MOSFETs Operated at Low Temperature (1996) (15)
Invited) Status and Trends in Ge CMOS Technology (2013) (15)
Systematic study of shallow junction formation on germanium substrates (2011) (15)
Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors (1998) (15)
Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities (2005) (15)
A model for MOS gate stack quality evaluation based on the gate current 1/f noise (2008) (15)
Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs (2015) (15)
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs (2008) (15)
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs (2010) (15)
Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2 (2008) (15)
Review—Device Assessment of Electrically Active Defects in High-Mobility Materials (2016) (15)
Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs (2008) (15)
p-n junction peripheral current analysis using gated diode measurements (1998) (14)
Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon (2005) (14)
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology (2017) (14)
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures (2018) (14)
Endurance of One Transistor Floating Body RAM on UTBOX SOI (2014) (14)
The low-frequency noise behaviour of graded-channel SOI nMOSFETs (2007) (14)
Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs (2009) (14)
On the geometry dependence of the 1/f noise in CMOS compatible junction diodes (1999) (14)
DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory (2013) (14)
Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes (2002) (14)
The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures (2012) (14)
Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam (2016) (14)
Defect profiling in FEFET Si:HfO2 layers (2020) (14)
Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013) (14)
Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias (2004) (14)
A deep-level analysis of Ni–Au/AlN/(1 1 1) p+-Si metal–insulator–semiconductor capacitors (2011) (14)
Defect assessment and leakage control in Ge junctions (2014) (14)
A Statistical Approach to Microdose Induced Degradation in FinFET Devices (2009) (14)
Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs (2016) (14)
Generation and annealing behaviour of MeV proton and /sup 252/Cf irradiation induced deep levels in silicon diodes (1994) (14)
Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation (2011) (14)
Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra (2014) (14)
Flicker noise in deep submicron nMOS transistors (2000) (14)
Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions (2011) (13)
Electrically active defects at AlN/Si interface studied by DLTS and ESR (2012) (13)
Random telegraph signals in silicon‐on‐insulator metal‐oxide‐ semiconductor transistors (1994) (13)
Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets (2019) (13)
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films (2016) (13)
DLTS and PL studies of proton radiation defects in tin-doped FZ silicon (2002) (13)
Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics (2006) (13)
Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs (2011) (13)
Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors (1995) (13)
DLTS of grown-in dislocations in p- and n- type high-purity germanium (1985) (13)
Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement (2007) (13)
Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance (2006) (13)
Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors (2007) (13)
Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs (2003) (13)
Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs (2004) (13)
Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs (2012) (13)
A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium (2006) (13)
Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio (2009) (13)
Electrical properties of extended defects in strain relaxed GeSn (2018) (13)
Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature (2001) (13)
Distinction between silicon and oxide traps using single‐trap spectroscopy (2015) (13)
Kink-related noise overshoot in SOI n-MOSFETs operating at 4.2 K (1992) (13)
Degradation of GaN LEDs by electron irradiation (2010) (13)
p‐n Junction Diagnostics to Determine Surface and Bulk Generation/Recombination Properties of Silicon Substrates (1999) (13)
Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques (2007) (13)
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results (2017) (12)
Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon (1997) (12)
Kink-related low-frequency noise overshoot in Si NMOSTs at liquid helium temperatures (1992) (12)
A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulator n‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures (1992) (12)
On and off state hot carrier reliability in junctionless high-K MG gate-all-around nanowires (2015) (12)
Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate (2013) (12)
Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's (1993) (12)
Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface (2011) (12)
Anomalous latch-up behaviour of CMOS at liquid helium temperatures (1990) (12)
Electrical Performance of Ge Devices (2007) (12)
Defect engineering aspects of advanced Ge process modules (2008) (12)
Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution (2018) (12)
Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates (2006) (12)
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors (2005) (12)
Investigation of Drain Current RTS Noise in Small Area Silicon MOS Transistors (1991) (12)
Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation (2016) (12)
The cryogenic operation of partially depleted silicon-on-insulator inverters (1995) (12)
On the dechanneling of protons in Si [110] (2003) (12)
The response of Si p - n junction diodes to proton irradiation (1996) (12)
Defects, Junction Leakage and Electrical Performance of Ge pFET Devices (2009) (12)
Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs (2012) (12)
Correlation between deep-level parameters and energy resolution of p-type high purity Ge γ-detectors (1986) (12)
Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium (2009) (12)
NW-TFET analog performance for different Ge source compositions (2013) (12)
Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs (2014) (12)
Intrinsic voltage gain of Line-TFETs and comparison with other TFET and MOSFET architectures (2016) (12)
Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes (2000) (12)
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs (2010) (12)
Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes (1992) (12)
RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application (2013) (11)
Defects in Si foils fabricated by spalling at low temperature: electrical activity and atomic nature (2013) (11)
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology (2013) (11)
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs (2011) (11)
A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress (1998) (11)
Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well (2001) (11)
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes (2003) (11)
Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics (2000) (11)
Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs (2017) (11)
Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation (2012) (11)
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodes (2013) (11)
DC and low frequency noise performances of SOI p-FinFETs at very low temperature (2013) (11)
High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors (2004) (11)
Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions (2000) (11)
On the Effect of Lead on Irradiation Induced Defects in Silicon (2005) (11)
Analytical model for the current-voltage characteristics of a silicon resistor at liquid helium temperatures (1990) (11)
Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs (2010) (11)
Low-frequency drain current noise behavior of InP based MODFET's in the linear and saturation regime (1998) (11)
Fin shape influence on the analog performance of standard and strained MuGFETs (2010) (11)
Point-Defect Generation in Ni-, Pd-, and Pt-Germanide Schottky Barriers on n -Type Germanium (2007) (11)
Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates (2020) (11)
Analysis of junction leakage in advanced germanium P+/n junctions (2007) (11)
Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs (2015) (11)
Impact of neutron irradiation on optical performance of InGaAsP laser diodes (2000) (11)
Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (2018) (11)
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications (2014) (10)
Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin-gate-oxide partially depleted SOI NMOSFETs (2005) (10)
Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology (2018) (10)
Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon (2006) (10)
Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-κ/Metal-Gate pMOSFETs (2014) (10)
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications (2014) (10)
Radiation damage in flash memory cells (2002) (10)
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016) (10)
Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures (2016) (10)
Short-channel pMOSTs in a high-resistivity silicon substrate. I. Analytical model (1992) (10)
Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETs (2003) (10)
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification (2014) (10)
Substrate effect on UTBB SOI nMOSFET (2013) (10)
Diffusion and Gate Replacement: A New Gate-First High- $k$ /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry (2016) (10)
Zero Temperature Coefficient behavior for advanced MOSFETs (2016) (10)
Impact of 20-MeV /spl alpha/-ray irradiation on the V-band performance of AlGaAs pseudomorphic HEMTs (2000) (10)
Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K (1997) (10)
Photonic nanostructures for advanced light trapping in silicon solar cells: the impact of etching on the material electronic quality (2016) (10)
P+/n junction leakage in thin selectively grown Ge-in-STI substrates (2010) (10)
Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si (2007) (10)
In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature (2014) (10)
Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise (2014) (10)
(Invited) Nano-Beam Diffraction: Crystal Structure and Strain Analysis at the Nanoscale (2010) (10)
Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step (2003) (10)
Processing Factors Impacting the Leakage Current and Flicker Noise of Germanium p + -n Junctions on Silicon Substrates (2008) (10)
Extended-Defect Aspects of Ge-on-Si Materials and Devices (2010) (10)
FISH SOI MOSFET: Modeling, Characterization and Its Application to Improve the Performance of Analog ICs (2011) (10)
On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes (2017) (10)
The low-frequency noise overshoot in partially depleted n-channel silicon-on-insulator twin-MOST's (1994) (10)
The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime (1993) (10)
Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFETs (1995) (10)
Analog design with Line-TFET device experimental data: from device to circuit level (2020) (10)
Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal-oxide-semiconductor transistors (vol 66, pg 598, 1995) (1995) (10)
Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures (2021) (9)
Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy (2010) (9)
Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature (2006) (9)
Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates (2019) (9)
Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs (2014) (9)
Electronic properties of iron and cobalt impurity centres in germanium (2012) (9)
Gate stack engineering to enhance high-κ/metal gate reliability for DRAM I/O applications (2017) (9)
Empirical relationship between the low‐frequency noise spectral density and the transconductance of silicon‐on‐insulator n‐channel metal‐oxide‐semiconductor transistors (1994) (9)
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes (2015) (9)
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle (2001) (9)
Substrate current characteristics of Si N- and PMOST's at 4.2 K (1992) (9)
Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions (2008) (9)
Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio3 MIM Capacitors (2014) (9)
Zero-Temperature-Coefficient of planar and MuGFET SOI devices (2010) (9)
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs (2009) (9)
Defect-Related Excess Low-Frequency Noise in Ge-on-Si pMOSFETs (2011) (9)
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors (2013) (9)
Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon (2006) (9)
Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation (2001) (9)
Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications (2016) (9)
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As (2018) (9)
Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs (2006) (9)
Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations (2012) (9)
On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs (2012) (9)
Enhanced dynamic threshold voltage UTBB SOI nMOSFETs (2015) (9)
Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation (2003) (9)
Low-frequency noise in triple-gate n-channel bulk FinFETs (2011) (9)
Electrical Quality Assessment of Epitaxial Wafers Based on p-n Junction Diagnostics (1999) (9)
TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs (2015) (8)
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation (2020) (8)
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes (2016) (8)
The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks (2009) (8)
Evidence for an alternative, hole‐trapping related random telegraph signal mechanism in n‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors (1993) (8)
Impact of strain-engineering on the low-frequency noise performance of advanced MOSFETs (2006) (8)
Low-Frequency Noise Study of p-Channel Bulk MuGFETs (2011) (8)
The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon (2005) (8)
Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction (2008) (8)
Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET (2019) (8)
Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices (2008) (8)
Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view (2015) (8)
Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors (1993) (8)
Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K (1993) (8)
Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition (2018) (8)
(Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials (2013) (8)
A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs (2014) (8)
Transient response of silicon devices at 4.2 K. I. Theory (1991) (8)
Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation (2007) (8)
Characterization of Oxide Precipitates in Heavily B-Doped Silicon by Infrared Spectroscopy (2004) (8)
Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs (2013) (8)
Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs (2006) (8)
DLTS and PTIS of new donors in oxygen-doped germanium (1982) (8)
A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies (2014) (8)
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon (2003) (8)
Defect analysis in UTBOX SOI nMOSFETs by low-frequency noise (2012) (8)
Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks (2019) (8)
Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration (2005) (7)
A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs (1998) (7)
60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs (2001) (7)
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS (2006) (7)
Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs (1999) (7)
Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes (2003) (7)
Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions (2009) (7)
Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs (2008) (7)
Influence of the pre-treatment anneal on Co-germanide Schottky contacts (2008) (7)
Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium (2006) (7)
Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance (1999) (7)
Random Telegraph Signal Noise: A Probe for Hot-Carrier Degradation Effects in Submicrometer MOSFET's? (1992) (7)
Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers using DLTS (2013) (7)
Factors determining the damage coefficients and the low-frequency noise in MeV proton-irradiated silicon diodes (1998) (7)
Metal In-Diffusion during Fe and Co-Germanidation of Germanium (2007) (7)
Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography (1996) (7)
Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions (2003) (7)
Heavy Ion Damage in Ultra-Thin Gate Oxide SQl MOSFETs (2005) (7)
Status and trends in Ge CMOS technology (2013) (7)
Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect (2000) (7)
Si1-xGex-Channel PFETs: Scalability, Layout Considerations and Compatibility with Other Stress Techniques (2011) (7)
(Invited) Replacement Metal Gate/High-k Last Technology for Aggressively Scaled Planar and FinFET-Based Devices (2014) (7)
Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 ¬µm SiGe:C NPN HBT technology (2008) (7)
Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation (2009) (7)
Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons (2003) (7)
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides (2016) (7)
Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices (2002) (7)
Origin of wide retention distribution in 1T Floating Body RAM (2012) (7)
Improved Analytical Model for ZTC Bias Point for Strained Tri-gates FinFETs (2010) (7)
Impact of Gate Material on Low-frequency Noise of nMOSFETs with 1.5 nm SiON Gate Dielectric: Testing the Limits of the Number Fluctuations Theory (2005) (7)
Treatments for reliability improvement in thick oxides diffusion and gate replacement I/O transistors (2017) (7)
Random telegraph signal noise in advanced high performance and memory devices (2016) (7)
Stress Techniques and Mobility Enhancement in FinFET Architectures (2013) (7)
DLTS studies of high-temperature electron irradiated Cz n-Si (2004) (7)
Impact of twin-gate concept on silicon-on-insulator inverters (1994) (7)
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs (2010) (7)
Low frequency noise spectroscopy in rotated UTBOX nMOSFETs (2015) (7)
Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium (2006) (7)
Trap-Assisted Tunneling in Deep-Submicron Ge pFET Junctions (2010) (7)
Stress analysis of Si1−xGex embedded source/drain junctions (2008) (7)
<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise in Drain and Gate Current of MOSFETs With High-<formula formulatype="inline"><tex Notation="TeX">$k$</tex></formula> Gate Stacks (2009) (7)
A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon (2011) (7)
DLTS of p-type Czochralski Si wafers containing processing-induced macropores (2011) (7)
Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs (2003) (6)
Low-Frequency Noise Analysis of gamma-irradiated p-channel Bulk MuGFETS (2010) (6)
Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon (2001) (6)
Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy (2015) (6)
Estimating Temperature Dependence of Generation Lifetime Extracted from Drain Current Transients Model (2006) (6)
DIBL Study Using Triple Gate Unstrained and Uniaxial/Biaxial Strained FinFETs (2009) (6)
Potential and limitations of UTBB SOI for advanced CMOS technologies (2013) (6)
Metastable charge-trapping effect in SOI nMOSTs at 4.2 K (1993) (6)
Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes (2011) (6)
Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects (2001) (6)
Random telegraph noise: the key to single defect studies in nano-devices (2016) (6)
Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs (2011) (6)
Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 $\mu{\hbox {m}}$ SiGe:C NPN HBT Technology (2009) (6)
HIGH ENERGY PARTICLE IRRADIATION EFFECTS ON THE LOW-FREQUENCY NOISE OF CZOCHRALSKI SILICON JUNCTION DIODES (1996) (6)
Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective (2014) (6)
Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors (2011) (6)
Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium (2016) (6)
The low-frequency noise behaviour of Si n + p junction diodes fabricated on (1 0 0) and (1 1 1) substrates (1996) (6)
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge (2014) (6)
The dependence of sense margin and retention time on front and back gate bias in UTBOX FBRAM (2012) (6)
High-energy proton radiation induced defects in tin-doped n-type silicon (2001) (6)
Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes (1995) (6)
Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs (2007) (6)
Shallow boron implantations in Ge and the role of the pre-amorphization depth (2008) (6)
Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors (2003) (6)
Study of recombination and transport characteristics in strain-relaxed Si–SiGe layers (2005) (6)
Analysis of junctions formed in strained Si/SiGe substrates (2004) (6)
Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions (2014) (6)
On the origin of the 1∕f noise in shallow germanium p+-n junctions (2007) (6)
Ge content dependence of radiation damage in Si1‐xGex source/drain p‐type metal oxide semiconductor field effect transistors (2013) (6)
Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs (2018) (6)
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs (2015) (6)
Deep levels in heat-treated and 252Cf-irradiated p-type silicon substrates with different oxygen content (1994) (6)
Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs (2020) (6)
Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si (2018) (6)
A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures (2004) (6)
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures (2016) (6)
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures (2017) (6)
Electrical Effects of a Single Extended Defect in MOSFETs (2016) (6)
Influence of X-ray radiation on standard and uniaxial strained triple-gate SOI FinFETs (2013) (6)
Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions (2011) (6)
Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs (2005) (6)
DLTS of silver in germanium: evidence for an amphoteric impurity (1989) (6)
Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs (2018) (6)
Influence of hot-carrier stress on the kink/hysteresis behaviour of NMOST's operating at liquid helium temperatures (1991) (6)
TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective (2018) (6)
The use of body ties in partially depleted SOI MOSTs operating at cryogenic temperatures (1994) (6)
Effects of mechanical stress on polycrystalline-silicon resistors (2002) (6)
Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain (2010) (6)
Short-channel epitaxial germanium PMOS transistors (2010) (6)
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures (2016) (6)
Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques (2006) (6)
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices (2012) (6)
Analysis of the Silicon Film Thickness and the Ground Plane Influence on Ultra Thin Buried Oxide SOI nMOSFETs (2012) (6)
Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs (2014) (6)
Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON (2005) (6)
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks (2007) (6)
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs (2021) (6)
On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions (2009) (6)
Proton irradiation effects in silicon junction diodes and charge-coupled-devices☆ (1997) (6)
Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs (1993) (6)
Experimental Comparison between pTFET and pFinFET under Analog Operation (2013) (6)
Back Gate Voltage Influence on the LDD SOI NMOSFET Series Resistance Extraction from 150 to 300 K (2000) (6)
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation (2011) (6)
On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn? (2018) (6)
Radiation damage of polycrystalline silicon films (2002) (6)
Extended Defects Created by Light Ion Implantation in Ge (2008) (6)
Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain (2007) (5)
On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs (2007) (5)
Study of the linear kink effect in PD SOI nMOSFETs (2007) (5)
Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs (2009) (5)
From 5G to 6G: will compound semiconductors make the difference? (2020) (5)
Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs (1999) (5)
Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon (2002) (5)
Spectroscopic study of polysilicon traps by means of fast capacitance transients (2013) (5)
The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications (2012) (5)
Defect assessment of irradiated STI diodes (2002) (5)
Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs (2007) (5)
Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors (1997) (5)
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates (2013) (5)
Study of recombination characteristics in MOCVD grown GaN epi-layers on Si (2017) (5)
Understanding and optimizing the floating body retention in FDSOI UTBOX (2016) (5)
Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale (2013) (5)
Diffusion and Solubility of Dopants in Germanium (2007) (5)
Effective lifetime of minority carriers in silicon: The role of heat- and hydrogen plasma treatments (2004) (5)
(Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials (2015) (5)
Substrate effect on threshold voltage on lonh and short channel UTBB SOI nMOSFET (2014) (5)
Alternative random telegraph signal mechanisms in silicon-on-insulator MOS transistors (1993) (5)
On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon (1995) (5)
Substrate bias effect on Ge pMOSFETs with and without halo (2008) (5)
GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics (2012) (5)
(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs (2017) (5)
(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions (2010) (5)
Inversion Layer Quantization Impact on the Interpretation of 1/f Noise in Deep Submicron CMOS Transistors (2002) (5)
Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior (2019) (5)
Ground Plane influence on UTBB SOI nMOSFET analog parameters (2015) (5)
Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode (2014) (5)
Operation of Majority and Minority Carrier MOSFET's at Liquid Helium Temperature (1988) (5)
Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies (2000) (5)
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon (2007) (5)
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond (2021) (5)
A compact, broad-range, physical SPICE model extension for the gamma-radiation induced beta-degradation in a discrete SiGe HBT (2006) (5)
GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes (2016) (5)
Deep Levels in W-Doped Czochralski Silicon (2014) (5)
Influence of high temperature on substrate effect of UTBB SOI nMOSFETs (2014) (5)
Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors (2014) (5)
γ-irradiation hardness of short-channel nMOSFETs fabricated in a SOI technology (2002) (5)
High-temperature characterization of advanced strained nMUGFETs (2010) (5)
Effect of interface states on 1T-FBRAM cell retention (2012) (5)
Temperature Influences on FinFETs with Undoped Body (2007) (5)
Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation (2001) (5)
Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme (2014) (5)
Comparison of Charge Pumping and $1/f$ Noise in Irradiated Ge pMOSFETs (2012) (5)
Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS (1997) (5)
On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications (2018) (5)
NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance (2011) (5)
Invited CommunicationPerspectives of the cryo-electronics for the year 2000 (1998) (5)
Analog performance of GaN/AlGaN high-electron-mobility transistors (2021) (5)
Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Source/Drain Junctions (2009) (5)
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes (2016) (5)
Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors (2004) (5)
Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime (2018) (5)
40 years of 1/f noise modelling (1997) (5)
A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K (1995) (5)
Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality (2018) (5)
Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time (2014) (5)
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy (2017) (5)
RTS noise due to lateral isolation related defects in submicron nMOSFETs (1998) (5)
The Noise in Submicron SOI MOSFETs With 2.5 nm Nitrided Gate Oxide (2002) (4)
XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method (2012) (4)
OCTO FinFET (2013) (4)
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation (2001) (4)
Experimental analysis of differential pairs designed with line tunnel FET devices (2017) (4)
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments (1995) (4)
Low-Frequency Noise Characterization of Germanium n-Channel FinFETs (2020) (4)
The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes (1995) (4)
Diode analysis of advanced processing modules for deep-submicrometer CMOS technology nodes (2003) (4)
Radiation Damage in Silicon MOS Devices (2002) (4)
Alternative channel materials for MOS devices (2008) (4)
Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation (2005) (4)
Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs (2004) (4)
Calculation of FeB pairing in p-Si at room temperature for low B-concentrations (1991) (4)
Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs (2013) (4)
Radiation defects in STI silicon diodes and their effects on device performance (2001) (4)
Impact of irradiations performed at liquid helium temperatures on the operation of 0.7 /spl mu/m CMOS devices and read-out circuits (2004) (4)
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon (2003) (4)
Impact of Selective Epitaxial Growth and Uniaxial/Biaxial Strain on DIBL Effect Using Triple Gate FinFETs (2010) (4)
Germanium … The Semiconductor of Tomorrow? (2006) (4)
Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon (2003) (4)
Leakage current study of Si1−xCx embedded source/drain junctions (2008) (4)
Bias Dependence of Gate Oxide Degradation of 90 nm CMOS Transistors Under 60 MeV Proton Irradiation (2005) (4)
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs (2012) (4)
Effective hole mobility and low-frequency noise characterization of Ge pFinFETs (2016) (4)
High temperature influence on analog parameters of Bulk and SOI nFinFETs (2015) (4)
Influence of different UTBB SOI technologies on analog parameters (2016) (4)
Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique (2009) (4)
Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements (2006) (4)
Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation (2002) (4)
On the Electrical Activity of Oxygen-Related Extended Defects in Silicon (1994) (4)
Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters (2015) (4)
Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs (2015) (4)
Substrate current and kink analysis of MOSFETs at liquid helium temperatures (2000) (4)
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates (2009) (4)
Radiation damage in Si photodiodes by high-temperature irradiation (2003) (4)
Hot Implantations of P into Ge: Impact on the Diffusion Profile (2017) (4)
Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs (2000) (4)
Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETs (2013) (4)
Neutron-induced failure in super-junction, IGBT, and SiC power devices (2011) (4)
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena (2018) (4)
On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy (2017) (4)
Electronic properties of manganese impurities in germanium (2015) (4)
Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors (2009) (4)
Effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs (2003) (4)
Reliability Engineering Enabling Continued Logic for Memory Device Scaling (2019) (4)
Opposite trends between digital and analog performance for different TFET technologies (2018) (4)
Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K (2016) (4)
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018) (4)
Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance (1992) (4)
SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation (2013) (4)
Low-frequency noise analysis of DRAM peripheral transistors with La cap (2014) (4)
Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View (2015) (4)
Low-frequency gate current noise of InP based HEMTs (1999) (4)
Impact ionization related phenomena in Si MOSFETs operating at cryogenic temperatures (1997) (4)
Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs (1993) (4)
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures (2018) (4)
Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities (2001) (4)
Fin width influence on analog performance of SOI and bulk FINFETs (2014) (4)
Radiation Damage Of InGaAs Photodiodes By High Energy Particles (1997) (4)
Grown-in defects in germanium (2007) (4)
Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic (2017) (4)
Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon (2003) (4)
Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques (2007) (4)
Effects of electron and proton irradiation on embedded SiGe source/drain diodes (2008) (4)
Low temperature behaviour of submicron accumulation mode p-channel SOI MOSFETs (1992) (4)
Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance (2009) (4)
Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors (2020) (4)
Evidence for short-channel effect in the radiation response of 0.18µm CMOS transistors (2000) (4)
On the Origin of the 1/f 1.7 Noise in Deep Submicron Partially Depleted SOI Transistors (2002) (4)
Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs (2011) (4)
Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias (2013) (4)
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation (2004) (4)
Device Performance as a Metrology Tool to Detect Metals in Silicon (2019) (4)
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM (2001) (4)
Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film (2013) (4)
Insights in low frequency noise of advanced and high-mobility channel transistors (2012) (4)
Transconductance ramp effect in high-k triple gate sSOI nFinFETs (2009) (4)
Influence of High Temperature on UTBB SOI nMOSFETs with and without Ground Plane (2013) (4)
Small-signal a.c. impedance of an Si resistor at liquid-helium temperatures (1991) (4)
On the Electrical Characterization of Grain Boundaries in Multicrystalline Silicon (2011) (4)
Pulsed I-V on TFETs: Modeling and Measurements (2017) (4)
Radiation Environments and Component Selection Strategy (2002) (4)
P implantation on doping of Ge: diffusion, activation, re-crystallization (2005) (4)
Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses (2016) (4)
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017) (4)
Invited) Advanced Semiconductor Devices for Future CMOS Technologies (2015) (3)
High Temperature Influence on the Trade-off between gm/ID and fT of nanosheet NMOS Transistors with Different Metal Gate Stack (2021) (3)
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation (2009) (3)
Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs (2006) (3)
Defect Engineering Considerations for Strained Silicon Substrates (2006) (3)
Threshold Voltage Modeling for Dynamic Threshold UTBB SOI in Different Operation Modes (2015) (3)
The Low‐frequency Noise of Strained Silicon n‐MOSFETs (2005) (3)
Temperature influence on strained nMuGFETs after proton radiation (2013) (3)
Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures (2020) (3)
Optimization of CMOS technology and design for deep cryogenic analog circuits (1991) (3)
An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method (2020) (3)
Vacancy Clusters in Germanium (2007) (3)
Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells (2017) (3)
Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs (2019) (3)
Reliability and retention of floating body RAM on bulk FinFET (2012) (3)
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs (2006) (3)
Study of Neutron Irradiation Effects on SOI and Strained SOI MuGFETs Assessed by Low-Frequency Noise (2010) (3)
Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes (2004) (3)
Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy (2011) (3)
Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes (1996) (3)
Back bias influence on analog performance of pTFET (2013) (3)
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view (2019) (3)
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation (2006) (3)
Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 K (1998) (3)
Low Temperature Analog Operation of Triple-Gate FinFETs with HfO2 Dielectrics and TiN Gate Material (2006) (3)
Static characteristics of gate-all-around SOI MOSFETs at cryogenic temperatures (1995) (3)
Noise and THI reliability indicators for thin film resistors (1996) (3)
Co-Germanide Schottky Contacts on Ge (2007) (3)
Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs (2005) (3)
Effect of deep levels and interface states on the minority carrier lifetime control of trench-IGBTs by electron irradiation (2006) (3)
Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes (2016) (3)
Technology development challenges for advanced group IV semiconductor devices (2016) (3)
Defect Aspects of Ge-on-Si Materials and Devices (2009) (3)
Temperature influence on analog figures-of-merit of nanosheet nMOSFET devices for sub-7nm technology node (2020) (3)
Temperature activation of UTBOX SOI device characteristics with different source/drain engineering (2012) (3)
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs (2012) (3)
Analog Operation of Uniaxially Strained FD SOI nMOSFETs in Cryogenic Temperatures (2007) (3)
Gate length impact on UTBOX FBRAM devices (2012) (3)
Impact of Ge Content and Recess Depth on the Leakage Current in Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}/\hbox{Si}$ Heterojunctions (2011) (3)
Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy (2021) (3)
Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs (2007) (3)
Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics (2006) (3)
Radiation damage of Si photodiodes by high-temperature irradiation (2003) (3)
Modeling the gate current 1/f noise and its application to advanced CMOS devices (2008) (3)
Comparison of Current Mirrors Designed with TFET or FinFET Devices for Different Dimensions and Temperatures (2015) (3)
The multi-stable behaviour of SOI-NMOS transistors at low temperatures (1988) (3)
Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments (2020) (3)
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers (2008) (3)
Influence of the substrate on the degradation of irradiated Si diodes (1996) (3)
Enhanced dynamic threshold UTBB SOI at high temperature (2015) (3)
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS (2011) (3)
Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures (1995) (3)
Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers (2006) (3)
Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs (2011) (3)
(Invited) Impact of Processing Factors on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire FETs (2021) (3)
Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures (1998) (3)
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors (2019) (3)
Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates (2009) (3)
On the variability and front-back coupling of the low-frequency noise in UTBOX SOI nMOSFETs (2012) (3)
Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers (1999) (3)
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal (2020) (3)
Spacer Length and Tilt Implantation Influence on Scaled UTBOX FD MOSFETs (2012) (3)
Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Barriers on N-Type Germanium Substrates (2006) (3)
Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties (2016) (3)
Nanowire & Nanosheet Fets for Advanced Ultra-Scaled, High-Density Logic and Memory Applications (2020) (3)
Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers (2013) (3)
Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs (2005) (3)
Unity gain frequency on FinFET and TFET devices (2014) (3)
Impact of In Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors (2019) (3)
The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates (1994) (3)
Investigation of the Gate Length and Drain Bias Dependence of the ZTC Biasing Point Instability of N- and P-Channel PD SOI MOSFETs (2009) (3)
Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques (2008) (3)
Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices (2013) (3)
Study of low frequency noise in vertical NW-Tunnel FETs with different source compositions (2015) (3)
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes (2016) (3)
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices (2012) (3)
On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers (2005) (3)
Deep levels in silicon–oxygen superlattices (2015) (3)
The Low-Frequency Noise Behavior of Gate-All-Around Soi Transistors (1992) (3)
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation (2014) (3)
Influence of proton radiation and strain on nFinFET zero temperature coefficient (2016) (3)
Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18um CMOS (2000) (3)
A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States (2011) (3)
On the relationship between the bulk recombination lifetime and the excess {1}/{f} noise in silicon p-n junction diodes (1996) (3)
Biaxial Stress Simulation and Electrical Characterization of Triple-Gate SOI nMOSFETs (2012) (3)
Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current (2002) (3)
Effects of electron irradiation on SiGe devices (2010) (3)
Temperature impact on the lorentzian noise induced by electron valance band tunneling in partiallydepleted SOI nMOSFETs (2006) (3)
A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors (1997) (3)
Experimental validation of electromigration by low frequency noise measurement for advanced copper interconnects application (2015) (3)
Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs (2013) (3)
A consistent experimental method for the extraction of the threshold voltage of SOI nMOSFETs from room down to cryogenic temperatures (1993) (3)
Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies (2010) (3)
Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures (2015) (3)
Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets (2021) (3)
On the Basic Correlation between Polysilicon Resistor Linearity, Matching and 1/f Noise (1999) (3)
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000) (3)
(Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era (2020) (3)
Low-frequency noise of advanced memory devices (2015) (3)
Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures (2000) (3)
Opto-Electronic Components for Space (2002) (3)
Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices (2015) (3)
Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer (2007) (3)
Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs (2015) (3)
Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions (2007) (3)
Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs (1999) (2)
Transport mechanism influence on Nanowire-TFETanalog performance as a function of temperature (2014) (2)
An editorial on the recent advances in high and low temperature electronics (2017) (2)
The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices (2015) (2)
Radiation source dependence of device performance degradation for 4H-SiC MESFETs (2006) (2)
RTA and FLA of ultra-shallow implanted layers in Ge (2008) (2)
Mechanical stress of the electrical performance of polycrystalline-silicon resistors (2001) (2)
Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance (1999) (2)
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency (2016) (2)
Strain influence on analog performance of single-gate and FinFET SOI nMOSFETs (2008) (2)
Junction formation in Ge by ion implantation (2007) (2)
Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature (2014) (2)
Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs (1995) (2)
Impact of the TiN metal gate thickness on gate induced floating body effect (2009) (2)
Source/Drain junction integration issues in submicron Ge MOSFETs (2008) (2)
Gate induced floating body effects in SiON and HfO2 triple gate SOI FinFETs (2007) (2)
Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs (2011) (2)
Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs (2005) (2)
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014) (2)
Negative bias temperature instabilities in pMOSFETS: Ultrafast characterization and modelling (2015) (2)
Defect control in advanced high-mobility substrates (2005) (2)
Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs (2015) (2)
Silicon-based cryogenic electronics: From physical curiosity to quantum computing (2003) (2)
Improving the low-frequency noise performance of input/output DRAM peripheral pMOSFETs (2017) (2)
Hot-carrier degradation of nMOSTs stressed at 4.2 K (1993) (2)
Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013) (2)
The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors (2007) (2)
Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors (2006) (2)
Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction (2019) (2)
The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters (2014) (2)
DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon (2005) (2)
Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging (2019) (2)
Ge and III/V devices for advanced CMOS (2009) (2)
Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques (2009) (2)
Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress (2020) (2)
Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors (2004) (2)
Chapter 2 – Silicon Devices and Circuits (2001) (2)
RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs (1997) (2)
Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates (2019) (2)
Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs (2007) (2)
Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices (2010) (2)
Do we have to worry about extended defects in high-mobility materials? (2018) (2)
Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs (2015) (2)
P-N- Junction Peripheral Current Analysis using Gated Diode Measurements (1999) (2)
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon (2002) (2)
Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon (1995) (2)
The activation energy dependence on the electric field in UTBOX SOI FBRAM devices (2013) (2)
Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers (2013) (2)
Process- and irradiation-induced defects in silicon devices (1996) (2)
A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon (2003) (2)
Proton Radiation Effects on the Analog Performance of Bulk n- and p-FinFETs (2015) (2)
Harmonic distortion of strained triple-gate FinFETs at low temperatures (2010) (2)
Deep level investigation of INGAAS on INP layer (2017) (2)
On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs (2020) (2)
Gate Bias Effect on the 60-MeV Proton Irradiation Response of 65-nm CMOS nMOSFETs (2006) (2)
High Purity Silicon 11 (2010) (2)
Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference (1997) (2)
Low frequency noise characterization of advanced and end of the roadmap devices (2014) (2)
Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications (2015) (2)
Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient (2016) (2)
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs (2021) (2)
Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation (2013) (2)
Current transients in almost-ideal Czochralski silicon p–n junction diodes (1999) (2)
Germanium Doping of Si Substrates for Improved Device Characteristics and Yield (2010) (2)
Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach (2015) (2)
Floating body effect on n-channel bulk FinFETs for memory application (2014) (2)
Liquid-helium temperature hot-carrier degradation of Si p-channel MOSTs (1993) (2)
Two-stage amplifier design based on experimental Line-Tunnel FET data (2019) (2)
Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness (2010) (2)
What can low-frequency noise learn us about the quality of thin-gate dielectrics? (2003) (2)
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique (2009) (2)
Electrical characterization of shallow cobalt-silicided junctions (2001) (2)
Self-heating based model for polysilicon resistors (2003) (2)
Random Telegraph Signal related low-frequency noise peaks in submicrometer Si MOST's (1993) (2)
Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices (2005) (2)
Chapter 4 – Radiation Effects and Low-Frequency Noise in Silicon Technologies (2001) (2)
Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs (2012) (2)
What do We Know About Hydrogen-Induced Thermal Donors? (2008) (2)
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs (2015) (2)
Lifetime study in advanced isolation techniques (2001) (2)
Study of recombination properties of neutron transmutation doped silicon wafers. (1997) (2)
Semiconductor Film Bandgap Influence on Retention Time of UTBOX SOI 1T-FBRAM (2013) (2)
Radiation damage in proton-irradiated strained Si n-MOSFETs (2006) (2)
Carrier lifetime evaluation of electron irradiated SiGe/Si diode (2010) (2)
The low-frequency noise in n-mosfets on strained silicon : Is there room for improvement? (2006) (2)
Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs (2011) (2)
Does Strain Engineering Impact the Gate Stack Quality and Reliability? (2007) (2)
A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors (2009) (2)
Is there a future for cryogenic SOI (1999) (2)
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002) (2)
(Invited) Impact of the Metal Gate on the Oxide Stack Quality Assessed by Low-Frequency Noise (2017) (2)
Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation (1997) (2)
Performance of Source Follower Buffers Implemented with Standard and Strained Triple-Gate nFinFETs (2010) (2)
Irradiation temperature dependence of radiation damage in STI Si diodes (2003) (2)
On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium (2007) (2)
Analog Performance At Room and Low Temperature of Triple-Gate Devices: Bulk, DTMOS, BOI and SOI (2012) (2)
Relaxation-Induced Excess Leakage Current in Recessed Si1-xGex Source/Drain Junctions (2007) (2)
Comparison of analog performance between SOI and Bulk pFinFET (2014) (2)
Noise analysis in advanced memory devices (2015) (2)
Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration (2020) (2)
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation (2014) (2)
LOW-FREQUENCY NOISE CHARACTERISATION OF SILICON-ON INSULATOR DEPLETION-MODE p-MOSFETS (1995) (2)
Epitaxy‐free monocrystalline silicon thin films: Identifying the mechanisms behind lifetime degradation upon multiple high‐temperature annealings (2011) (2)
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors (2021) (2)
Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors (2017) (2)
In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs (2015) (2)
The Potential and Restrictions of the Double Derivative Method for Threshold Voltage Extraction in SOI MOSFETs (1994) (2)
Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices (2010) (2)
One Transistor Floating Body RAM Performances on UTBOX Devices Using the BJT Effect (2012) (2)
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2017) (2)
DIBL performance of 60 MeV proton-irradiated SOI MuGFETs (2010) (2)
Lattice defects in high resistivity silicon (1996) (2)
Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs (2007) (2)
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy (2019) (2)
Low Frequency Noise Performance of State-of-the-Art and Emerging CMOS Devices (2012) (2)
Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes (2004) (2)
Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs (2014) (2)
Operational Transconductance Amplifier Design with Gate-All-Around Nanosheet MOSFET using Experimental Lookup Table Approach (2021) (2)
CHC degradation of strained devices based on SiON and high-k gate dielectric materials (2011) (2)
Low frequency noise of cryogenic silicon electronics (1997) (2)
Temperature-independent slow carrier emission from deep-level defects in p-type germanium (2013) (2)
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017) (2)
Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K (1995) (2)
Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack (2015) (2)
Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction (2013) (2)
Gate Stack Influence on GIFBE in nFinFETs (2009) (2)
Effects of high temperature electron irradiation on trench-IGBT (2005) (2)
Impact of Pre- and Post-Growth Treatment on the Low-Frequency Noise of InGaAs nMOSFETs (2014) (2)
Low-frequency noise investigation of n-channel 3D devices (2015) (2)
OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices (2019) (2)
Displacement damage effects after high energy proton irradiation in cryogenic MOSFETs for space applications (2000) (2)
Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton (2012) (2)
The temperature mobility degradation influence on the ZTC of PD and FD SOI mosfets (2005) (2)
Radiation hardness aspects of advanced FinFET and UTBOX devices (2012) (2)
Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs (2013) (2)
(Invited) Advanced Transistors for High Frequency Applications (2020) (2)
Space Radiation Aspects of Silicon Bipolar Technologies (2002) (2)
Integration of CMOS-electronics in an SOI layer on high-resistivity silicon substrates (1992) (2)
Radiation source dependence of degradation and recovery of irradiated In/sub 0.53/Ga/sub 0.47/As PIN photodiodes (1997) (2)
Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN Gate Stacks (2005) (2)
Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions (2006) (2)
Experimental comparison between relaxed and strained Ge pFinFETs (2017) (2)
Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective (2007) (2)
Impact of SEG on uniaxially strained MuGFET performance (2011) (2)
Radiation-Induced Back Channel Leakage in 60 MeV-Proton-Irradiated 0 . 10 μ m-CMOS Partially Depleted SOI MOSFETs (2)
Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions (2015) (2)
Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013) (2)
Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation (2005) (1)
On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire MOSFETs with Bulk Source Contact (2022) (1)
Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities (2020) (1)
Advanced Semiconductor Materials and Devices—Outlook (2002) (1)
Effect of surface electric field on Coulomb blockade energy and RTS capture kinetics in submicron nMOSFETs (1999) (1)
Radiation effect on n-MOSFETs fabricated in a BiCMOS process (2002) (1)
Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron (2001) (1)
Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons (2006) (1)
Total ionizing dose effects on ultra thin buried oxide floating body memories (2012) (1)
Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior (2013) (1)
Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices (2021) (1)
Defect analysis of n-type silicon strained layers (2001) (1)
Problems of low-frequency noise in depletion mode pMOSFETs under inversion conditions (1996) (1)
Excess noise behaviour in short n-channel SOI MOSFET's (1997) (1)
The impact of high-energy proton irradiation on the low-frequency 1/f noise in FZ-silicon diodes (2000) (1)
Effect of substrate rotation on the analog performance of triple-gate FinFETs (2009) (1)
GaAs Based Field Effect Transistors for Radiation-Hard Applications (2002) (1)
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C (2021) (1)
Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature (2014) (1)
NO oxides for low noise 0.18um analog CMOS (2001) (1)
Spectroscopic study of oxygen related lattice defects in annealed silicon (1995) (1)
Deep traps in In0.3Ga0.7As nFinFETs studied by Generation-Recombination noise (2017) (1)
Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates (2005) (1)
Influence of the N-Type FinFET Width on the Zero Temperature Coefficient (2007) (1)
Stress Relaxation Empirical Model for Biaxially Strained Triple-Gate Devices (2011) (1)
Halo effects on 0.13 μm floating-body partially depleted SOI n-mosfets in low temperature operation (2003) (1)
Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization (2021) (1)
Radiation-induced deep levels in lead and tin doped N-type Czochralski silicon (2004) (1)
Thermal and plasma treatments for improved (Sub-)1nm EOT RMG high-k last devices (2012) (1)
Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric (2006) (1)
A Comparison of Intrinsic Point Defect Properties in Si and Ge (2008) (1)
Radiation damage of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation (2001) (1)
On the Origin of the 1/f (2002) (1)
Transition intensities and noise spectra in submicron MOSFETs (1997) (1)
Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation (2007) (1)
Lifetime Assessment of In x Ga1−x As n‐Type Hetero‐Epitaxial Layers (2022) (1)
Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions (2010) (1)
Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective? (2020) (1)
Excess carrier dynamics in SiGe ultra-thin layers (2005) (1)
Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack (2007) (1)
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs (2012) (1)
Effects of high-temperature gamma ray and electron irradiation on npn Si transistors (2001) (1)
Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks (2021) (1)
The Low-Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions (2007) (1)
Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus (2001) (1)
Degradation of deep submicron partially depleted soi CMOS transistors under MeV proton or gamma irradiation (2003) (1)
Advanced semiconductor devices for future CMOS technologies (2015) (1)
(Invited, Digital Presentation) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling (2022) (1)
Processing and Defect Control in Advanced Ge Technologies (2007) (1)
A low-frequency noise study of state-of-the-art silicon n+p junction diodes (1995) (1)
Electrical characterization of advanced gate dielectrics (2007) (1)
Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point (2008) (1)
Impact of Gate Dielectric Material on Basic Parameters of MO(I)SHEMT Devices (2020) (1)
On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures (2017) (1)
Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs (2018) (1)
Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013) (1)
Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996) (1)
Impact of cryogenic temperature operation on static and low frequency noise behaviors of FD UTBOX nMOSFETs (2017) (1)
Low-frequency noise behavior of graded-channel SOI n-MOSFETs (2007) (1)
Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium (2008) (1)
Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes (1997) (1)
Study of silicon-silicon nitride interface properties on flat and textured surfaces by deep level transient spectroscopy (2010) (1)
Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C (2021) (1)
Invited; Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors (2014) (1)
p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates (2001) (1)
Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K (1998) (1)
Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments (2020) (1)
Low frequency noise performance of gate-first and replacement metal gate CMOS technologies (2013) (1)
Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization (1997) (1)
Low temperature operation of silicon-on-insulator inverters (1994) (1)
Can we tell something about the barrier for capture from Random Telegraph Signal time constants without changing the temperature? (2016) (1)
Reliability performance characterization of SOI FinFETs (2009) (1)
Dopants for N and P junctions in germanium (2006) (1)
Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors (2007) (1)
Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions (2012) (1)
DIBL Behavior of Triple Gate FinFETs with SEG on Biaxial Strained Devices (2010) (1)
TFETs for Analog Applications (2018) (1)
The influence of different stress techniques and proton radiation on GIDL in triple-gate SOI devices (2012) (1)
Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping (2011) (1)
GIDL behavior in UTBOX SOI devices with high-k/metal gate stacks (2012) (1)
The impact of Fe and Cu on the minority carrier lifetime of P and N-type silicon wafers (1995) (1)
Influence of temperature on the operation of strained triple-gate FinFETs (2008) (1)
Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon (2016) (1)
Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs (2009) (1)
Rotated SOI MuGFETs at high temperatures (2011) (1)
Dynamic threshold voltage influence on Ge pMOSFET hysteresis (2015) (1)
Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions (2008) (1)
Degradation and recovery of Si diodes by 20-MeV protons and 220-MeV carbon particles (1997) (1)
Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies (2007) (1)
Impact of residual high-energy boron implantation induced p-well defects on shallow junctions (2000) (1)
Low-frequency noise in strained and relaxed Ge pMOSFETs (2010) (1)
Extended defect related excess low-frequency noise in Si junction diodes (1996) (1)
Randon telegraph signal phenomenology (2017) (1)
The C Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs (2007) (1)
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices (2021) (1)
Trade-off Analysis between gm/ID and fT of nanosheet NMOS Transistors with Different Metal Gate Stack at High Temperature (2022) (1)
The impact of the Ge concentration in the source for vertical tunnel-FETs (2015) (1)
Radiation tolerance of Si1 − yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations (2014) (1)
Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers (2010) (1)
Channel backscattering coefficient impact on FinFET devices with uniaxial/biaxial strain engineering (2010) (1)
Noise characterization of gated silicon p-n diodes (1997) (1)
EPR studies of neutron-irradiated n-type FZ silicon doped with tin (2002) (1)
Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures (2010) (1)
A deep‐level transient spectroscopy study of p‐type silicon Schottky barriers containing a Si–O superlattice (2017) (1)
Low frequency noise in partially depleted SOI twin-MOSFET's (1993) (1)
Low frequency noise and fin width study of silicon passivated germanium pFinFETs (2016) (1)
Point and Extended Defects (2014) (1)
Challenges for advanced end of the roadmap, beyond Si and beyond CMOS technologies (2017) (1)
Analog parameters of MuGFET devices with different source/drain engineering (2012) (1)
Impact of Advanced Gate Stack Engineering On Low Frequency Noise Performances of Planar Bulk CMOS transistors (2009) (1)
Low-frequency and random telegraph noise performance of Ge-based and III–V devices on a Si platform (2016) (1)
Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors (2021) (1)
Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications (2022) (1)
Catalytic Forming Gas Anneal on III-V/Ge MOS Systems (2009) (1)
Impact of scaling on the low-frequency noise performance of advanced CMOS devices (2006) (1)
Study of ΔID/ID of a single charge trap in utbox silicon films (2014) (1)
Guidelines for cryogenic spaceborn CMOS testing and optimization (2000) (1)
Intrinsic point defect properties and engineering in silicon and germanium Czochralski crystal growth (2008) (1)
Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics (2004) (1)
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si (2003) (1)
Detector diodes and test devices fabricated in high resistivity SOI wafers (1992) (1)
Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs (2008) (1)
Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs (2021) (1)
Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K (1996) (1)
Study of the main digital and analog parameters of underlappedMuGFETs (2012) (1)
Radiation damage in deep submicron partially depleted SOI CMOS (2003) (1)
Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs (2015) (1)
Simple Analytical Model to Study the ZTC Bias Point in FinFETs (2007) (1)
Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO2 Films (2002) (1)
Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric (2021) (1)
Are Extended Defects a Show Stopper for Future III-V CMOS Technologies (2019) (1)
Local Electric Fields in Silicided Shallow Junctions (2004) (1)
Random telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs (1999) (1)
(Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies (2020) (1)
DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures (1994) (1)
Displacement Damage in Group IV Semiconductor Materials (2002) (1)
Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots (2017) (1)
The Use of Body Ties in Cryogenic SOI CMOS (1994) (1)
Buried Layer Processing for Advanced Bipolar Technology (1989) (1)
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs (2008) (1)
High-k Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for Advanced CMOS (2009) (1)
Models for Burst and RTS Noise Mechanism in Electronic Devices (1995) (1)
Detailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain (2015) (1)
Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-k Dielectric/Metal Gate 45 nm Bulk CMOS Technology (2013) (1)
Contact technology schemes for advanced Ge and III-V CMOS technologies (2012) (1)
Floating body retention analysis for 1T-DRAM (2013) (1)
Radiation damage of InGaAs photodiodes by high-temperature electron and neutron irradiation (2003) (1)
Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs (2020) (1)
On the radiation damage effects in semiconductors beyond the end of range of implanted protons at high energies and fluences (2005) (1)
GRT model for random telegraph signals in MOSFETS (1999) (1)
Gate-length dependence of the low-frequency noise overshoot in partially depleted SOI n-MOSFET's (1993) (1)
Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs (2011) (1)
Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained Silicon SOI MuGFETs (2013) (1)
Erratum: ‘‘Substrate bias effect on the capture kinetics of random telegraph signals in submicron p‐channel silicon metal–oxide–semiconductor transistors’’ [Appl. Phys. Lett. 66, 598 (1995)] (1995) (1)
The impact of the Ge content on the characteristics of strained Si(1-x)Ge(x) epitaxial diodes before and after degradation by high energy particles (1998) (1)
Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy (2011) (1)
Enhanced model for ZTC in irradiated and strained pFinFET (2017) (1)
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs (2012) (1)
Analysis of the Total Resistance in Standard and Strained FinFET Devices With and Without the Use of SEG (2009) (1)
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013) (1)
Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures (2018) (1)
Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI (2015) (1)
Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates (2013) (1)
Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs (2009) (1)
Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers (2020) (1)
Reliability of polycrystalline silicon thin film resistors (2001) (1)
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy (2020) (1)
Analysis of oxygen thermal donor formation in n-type Cz silicon (2003) (1)
Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics (2009) (1)
Analysis of border traps in high-к gate dielectrics on high-mobility channels (2013) (1)
Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech. (2012) (1)
Jan Vanhellemont – 35 years of materials research in microelectronics (2016) (1)
Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate (2021) (1)
Insights into Scaled Logic Devices Connected from Both Wafer Sides (2022) (1)
A DLTS Study of SiO2 and SiO2/SiNx Bi-Layer Surface Passivation of Silicon (2010) (1)
Gate length effect on the RTS noise amplitude in SOI MOSFETs (1996) (1)
Combined IV and CV Analysis of Laser Annealed Carbon and Boron Implanted SiGe Epitaxial Layers (2010) (1)
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra (2018) (1)
Trap identification on n-channel GAA NW FETs (2020) (1)
1/f Noise as a Tool to Assess Fermi Level Pinning (EF) at the HfO2/poly-Si Interface in High-k n-MOSFETs (2006) (1)
Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio (2008) (1)
Low-frequency noise in high-k and SiO2 UTBOX SOI nMOSFETs (2013) (1)
Substrate effects on the degradation of irradiated Si diodes (1995) (1)
Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog applications (2010) (1)
Characterization of Ge Implanted with Ni and Hf Ions (2006) (1)
Noise in physical systems and 1/f fluctuations : proceedings of the 14th internatinal conference, Leuven, Belgium, 14-18 July, 1997 (1997) (1)
Radiation damages of InGaAs photodiodes by high-temperature electron irradiation (2004) (1)
Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy (2010) (1)
Fin shape influence on analog performance of MuGFETs at room and at low temperature (2011) (1)
Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme (2013) (1)
Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1–xGex source/drain junctions (2009) (1)
Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements (1997) (1)
Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance (1997) (1)
Defect behavior and control in advanced CMOs process technologies (2004) (1)
Investigation of Tri-Gate FinFETs by Noise Methods (2011) (1)
Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices (2012) (1)
Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique (2021) (1)
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Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth (2011) (1)
Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature (2001) (1)
Influence of irradiation temperature on electron-irradiated STI Si diodes (2003) (1)
The low-frequency noise behaviour at room temperature and at 77 K of pMOSTs fabricated on high-resistivity silicon substrates (1993) (1)
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The Length-Dependence of the 1/f Noise of Graded-Channel SOI nMOSFETs (2007) (1)
Radiation Damage in GaAs (2002) (1)
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Electron Spin Resonance Probing of Defects in Si Foils Fabricated by the SLIM-Cut Method (2014) (1)
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Modeling of Metal Properties in Si, Si 1− x Ge x and Ge (2018) (1)
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Generation-recombination noise sources in silicon-on-insulator MOSFETs (1996) (1)
1/f noise in deep submicron CMOS technology for RF and analogue applications (2004) (1)
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Oxygen precipitation and thermal donor formation in Pb- and C-doped N-type Czochralski silicon (2004) (1)
DLTS of High-Resistivity Si (1991) (1)
Low-Frequency Noise Characterization of High Energy Electron and Gamma-Irradiated Si Junction Diodes (1995) (0)
Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon (2017) (0)
Influence of Fin Width and Channel Length on the Performance of Buffers Implemented with Standard and Strained Triple-Gate nFinFETs (2009) (0)
SEG and fin dimensions influence on biaxial stress effectiveness in tri-gate SOI nMOSFETs (2012) (0)
Low-Frequency Noise in SOI p-MOSFETs Prepared on SIMOX and ZMR Substrates (1995) (0)
Strain analysis of Si1-xGex embedded source/drain transistors by nano-beam diffraction (2009) (0)
Global and/or Local Strain Influence on p- and n MuGFET Analog Performance (2011) (0)
Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield (1997) (0)
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Gate-dielectric interface effects on low-frequency (1/f) noise in p-MOSFETs with high-K dielectrics (2005) (0)
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1/F noise performance of nMOSFETs with Hf-based gate dielectrics (2005) (0)
Extraction of accurate lifetime and doping profiles in Si p-n junction diodes (1997) (0)
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Diode analysis of silicon substrate quality (1999) (0)
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Non silicon CMOS devices: research curiosity or key to future products? (2014) (0)
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Liquid helium temperature irradiation effects on 0.7 µm CMOS devices for cryogenic space applications (2003) (0)
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METAL IMPURITIES IN SILICON DEVICE FABRICATION%0D Download PDF Ebook and Read OnlineMetal Impurities In Silicon Device Fabrication%0D. Get Metal Impurities In Silicon Device Fabrication%0D Metal Impurities in Silicon Device Fabrication SpringerLink (2020) (0)
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Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs (2004) (0)
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Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing (2012) (0)
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NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs (2022) (0)
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Empirical Modeling of the Low-Frequency Noise Behaviour of InP-Based HEMTs (1998) (0)
Si GAA NW FETs Threshold Voltage Evaluation (2022) (0)
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Low-Frequency Noise Assessment of CMOS Transistors with a Through-Silicon Via (2011) (0)
Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays (1997) (0)
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Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers (2005) (0)
Impact of the pre-epi bake conditions in embedded Si1-xGex source/drain junctions (2009) (0)
In situ studies of Pd/Ge layers for ohmic contact on GaAs and InGaAs (2009) (0)
Radiation performance of shallow trench isolation (2000) (0)
Limitations of Minority Carrier Lifetime as a Parameter for Evaluating Iron Contamination in Silicon (1994) (0)
Impact of the substrate quality on the low frequency noise of silicon diodes (2008) (0)
Detailled characterisation of SOI n-FinFETs at very low temperature (2013) (0)
Combined Delta L and series resistance extraction of LDD MOSFETs at 77K (1995) (0)
Effect of irradiation on AlGaAs/GaAs p-HEMTs (1999) (0)
The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs (2007) (0)
Processing dependences of CHC degradation on strained-Si pMOSFETs (2010) (0)
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Proceedings of the Second European Workshop on low temperature electronics June 26-28, 1996 Leuven, Belgium - Preface (1996) (0)
Impact of Ge Doping on Si Substrate and Diode Characteristics (2009) (0)
pMOSFET Off-state Leakage and Junction Leakage Current in Ge-based Devices (2009) (0)
Analysis of then substrate current in Ge pMOSFETs (2009) (0)
Low-frequency noise diagnostics of radiation effects in silicon devices (1995) (0)
Analysis of the Temperature Dependence of Trap-Assisted-Tunneling in Ge pFET Junctions (2011) (0)
Influence of mechanical stress on the electrical performance of polycrystalline-silicon resistors (2000) (0)
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects (2015) (0)
Interface Trap Related Generation-Recombination Noise in Submicron Buried-Channel SOI pMOSFETs (1994) (0)
Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs (2021) (0)
Recent trends in CMOS reliability: From individual traps to circuit simulations (2011) (0)
RTS modeling, simulation and parameter extraction (2017) (0)
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Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines (1998) (0)
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SOI n- and pMuGFET Devices with Different TiN Metal Gate Thickness under Influence of Sidewall Crystal Orientation (2011) (0)
Model for the Radiation Degradation of (2003) (0)
Evaluation of Triple-Gate FinFETS with High-k Dielectrics and TiN Gate Materials Under Analog Operation (2007) (0)
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack (2009) (0)
Stochastic model for the RTS noise in submicron MOSFETs (1995) (0)
DLTS measurements as a tool for interface characterization of Si-passivated HfO2 germanium capacitors (2006) (0)
Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments (2005) (0)
Fin Width Influence on The Harmonic Distortion of Standard and Strained FinFETs Operating in Saturation (2009) (0)
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Deep level studies in high‐temperature annealed silicon wafers for layer transfer in thin‐film solar cells (2012) (0)
Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons (1997) (0)
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Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies (2021) (0)
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Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs (2004) (0)
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Frontiers in Low-Frequency Noise Research in Advanced Semiconductor Devices (2021) (0)
P+/N junction formation in thin strain relaxed buffer strained silicon substrates : The effect of the junction anneal (2006) (0)
Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs (1997) (0)
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Implantation and activation of Phosphorus in amorphous and crystalline Ge on Si (2012) (0)
Processing andDefect Control inAdvanced GeTechnologies (2007) (0)
Fabrication of SOI layers on high resistivity silicon substrates (1992) (0)
(Invited) Radiation Hardness of SiGe and Ge-Based CMOS Technologies (2011) (0)
Generation-Recombination and 1/f Noise in Buried Channel pMOSFETs under Inversion Conditions (1994) (0)
Freeze-out effects on the characteristics of deep submicron Si nMOSFETSs in the 77 K to 300 K range (1997) (0)
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Study of defects in In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction diodes for characterizing trap assisted tunneling (2015) (0)
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Comparative Study of Current Transients in HPHT and CVD Diamond Capacitor-Sensors (2016) (0)
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Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes (2006) (0)
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Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2004) (0)
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Low temperature noise spectroscopy of p-channel SOI FinFETs (2014) (0)
Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics (2011) (0)
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Effective hole mobility and low-frequency noise characterization of strained Ge pFinFETs (2016) (0)
Low frequency noise spectroscopy in advanced nFinFETs (2011) (0)
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Impact of the Channel Doping on the Low-Frequency Noise of Silicon Vertical Nanowire pFETs (2022) (0)
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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy (2002) (0)
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Liquid helium temperature irradiation effects on the operation of 0.7 μm CMOS devices for cryogenic space applications (2003) (0)
Schottky to ohmic transition in Pd/Ge contacts on n-GaAs (2008) (0)
Degradation and recovery of 1.3µm InGaAsP laser diodes irradiated by 1-MeV fast neutrons (1999) (0)
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AlGaN/GaN MISHEMT analysis from an analog point of view up to 150°C (2020) (0)
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Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs (2014) (0)
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Defect Engineering in Submicron CMOS Technologies (1991) (0)
Low-frequency noise diagnostics of CMOS technologies (1995) (0)
Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation (2012) (0)
Gateless 1T-DRAM on n-Channel Bulk FinFETs (2012) (0)
Electron irradiation effect on thermal donors in CZ-Si (2004) (0)
Impact of InxGa1−x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs (2016) (0)
Source of Metals in Si and Ge Crystal Growth and Processing (2018) (0)
nduced Transient Currents in Bu icon-On-Insulator FinFETs (2011) (0)
n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents (2016) (0)
Interfaces, Traps, and Reliability (2015) (0)
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap (2009) (0)
Performance degradation mechanism of irradiated GaAlAs LED (2007) (0)
Epitaxial growth in advanced MOS devices: challenges and solutions (2012) (0)
A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs (1996) (0)
A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high-voltage applications (2002) (0)
Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium (2007) (0)
Radiation damage in shallow trench isolation diodes (2001) (0)
Chapter 5 – Metals in Germanium (2007) (0)
Low frequency noise assessment of hot carrier stress effects in 0.7?m MOSFETs (1995) (0)
Transition probabilities and noise spectra in submicron MOSFETs (1996) (0)
Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well (2000) (0)
Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs (2012) (0)
Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy (2016) (0)
Studying the Reliability of Ge nFinFETs by the Normalized Input-referred Voltage Noise (2020) (0)
Extraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence (2000) (0)
Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams (1992) (0)
A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET (1999) (0)
Impact of traps on the electrical characteristics of GeSn/Ge diodes (2014) (0)
Impact of the generation width on the lifetime extraction in Cz silicon p-n junctions (1999) (0)
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2003) (0)
SEG and uniaxial strain influence on FinFET performance at low temperature (2010) (0)
Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes (1997) (0)
Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors (2015) (0)
High Temperature Electron Irradiation Effects in InGaAs Photodiodes (2003) (0)
Impact of STI width and spacing on the stress generation in deep submicron CMOS (2004) (0)
Temperature dependence of LF noise in UTBB nMOSFETs (2013) (0)
Low-frequency 1/f noise behaviour of deep submicron n-MOSFETS (1999) (0)
Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics (2013) (0)
Effect of variability in p-channel bulk MuGFETs on the gamma radiation behavior (2009) (0)
(Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features (2020) (0)
Generation rate analysis of different S/D junction engineering in scalted UTBOX 1-T DRAM (2013) (0)
Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications (2022) (0)
Fin Pitch Impact on Biaxial/Uniaxial Strain Engineering of Triple-Gate Devices (2011) (0)
Critical examination of the relationship between random telegraph signals and low‐frequency noise in small‐area Si MOST’s (2008) (0)
Low-frequency noise of CMOS compatible junction diodes (1995) (0)
BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application (2011) (0)
Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies (2011) (0)
Ground Plane Impact on Performance of Relaxed Ge FinFETs (2019) (0)
Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs (2004) (0)
Effect of Heavy Ion irradiation and Electrical Stress on Ultra-Thin Gate Oxide SOI MOSFETs (2006) (0)
Physical Mechanisms of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs (2012) (0)
Impact of Metals on Silicon Devices and Circuits (2018) (0)
The Transverse Field Dependence of the Capture Kinetics of Random Telegraph Signals in Small Area Si MOSFETs (1995) (0)
Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes (2015) (0)
Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits (2011) (0)
Scaling of nanoelectronics beyond the Si roadmap (2009) (0)
Stress Characterization of Selective Epitaxial Si1-xGex Deposition for Embedded Source/Drain Before and After Millisecond Laser Anneal (2009) (0)
Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs (2010) (0)
Electrical performance comparison of embedded Si1-xGex source/drain junctions processed in 200 mm and 300 mmEpi-reactors (2008) (0)
The Low-Frequency Noise Behavior of Advanced Logic and Memory Devices (2022) (0)
GaN Materials and Devices (2018) (0)
Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers (2016) (0)
Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs (2007) (0)
Radiation effects in silicon components for space applications (1995) (0)
Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment? (2018) (0)
Characterization and Detection of Metals in Silicon and Germanium (2018) (0)
Electrically Active Defects in Plated Crystalline Silicon n+p Solar Cells: A DLTS Perspective (2018) (0)
Impact of the Channel Doping on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire pMOSFETs (2022) (0)
Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation (2015) (0)
Ge and III/V devices on Si for advanced CMOS (2009) (0)
Radiation damage of Si(1-y)C(y) Source/Drain n-MOSFETs with different carbon concentrations (2013) (0)
GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices (2011) (0)
1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm (2019) (0)
Progressive degradation of TiN∕SiON and TiN∕HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress (2009) (0)
1/f noise and DLTS of LEDs (1996) (0)
Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles (1997) (0)
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients (2008) (0)
Processing Impact on the Low-Frequency Noise of 1.8 V Input-Output Bulk FinFETs (2019) (0)
Study of Hysteresis in Vertical Ge-Source Heterojunction Tunnel-FETs at Low Temperature (2015) (0)
Mrad(Si) Irradiation Effects in Gate-all-Around Silicon-on-Insulator n-MOSFET's (1994) (0)
Analysis of standard and strained FinFET operation in source-follower buffer configuration (2009) (0)
Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films (2001) (0)
High-energy particle irradiation effects in 0.5 /spl mu/m BiCMOS polysilicon emitter bipolar junction transistors (1997) (0)
Hydrogen and Helium implantation in Silicon and Germanium (2008) (0)
Germanium for post Si CMOS ... Implantation , doping and defects (2008) (0)
Physics of fluctuation processes in downscaled silicon MOSFETs (2009) (0)
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures (2017) (0)
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry (2013) (0)
Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications (2020) (0)
Study and design of radiation tolerant electronic semiconductor devices for communication under high radiation levels (2008) (0)
Tunnel emission from Co and Cr-related levels in p-type Ge (2013) (0)
Discussion of the flicker noise origin at very low temperature and polarisation operation (2019) (0)
Mn Related Defect Levels in Germanium (2014) (0)
A temperature independent emission component in the capacitance transients of deep-level defects in germanium (2012) (0)
Uniaxial and/or Biaxial Strain Influence on MuGFET Devices (2012) (0)
DLTS and FTIR study of quenching induced defects in germanium (2011) (0)
Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit (2006) (0)
Radiation damages of InGaP p-HEMTs by high energy particles (1998) (0)
Noise characteristics and hot carrier stress of 0.7 ?m MOSFETs (1996) (0)
Effect of irradiation in InGaAs devices (1997) (0)
Impact of InxGa1-x and Zn diffusion temperature on intrinsic voltage gain in III-V TFETs (2016) (0)
Comparison between 0.13 µm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002) (0)
RTS in memory and imager circuits (2017) (0)
Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs (2023) (0)
Impact of the Zn diffusion process at the source side of InxGa1−xAs nTFETs on the analog parameters down to 10 K (2017) (0)
Advanced CMOS Integration Technologies for Future Mobile Applications (2019) (0)
DC and noise performances of SOI FinFETs at very low temperature (2012) (0)
Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS (2005) (0)
High Mobility Channel (2016) (0)
Resistance and 1/f noise dependence on magnetic field in single Ni Fe layers and Ni Fe/Cu multilayers (1997) (0)
Low-Frequency Noise Sources in Silicon-on-Insulator Depletion-Mode p-MOSFETs (1994) (0)
Preface to the Focus Issue on Defect Characterization in Semiconductor Materials and Devices (2016) (0)
Origin and Suppression of Junction Leakage in Germanium-On-Silicon Structures (2007) (0)
2-MeV alpha ray effects in AlGaAsP p-HEMTs (2000) (0)
Study on radiation damages of SiGe devices by irradiation (2008) (0)
High frequency RTS noise in submicron MOSFETs (1996) (0)
Noise analysis inadvanced memory devices (2015) (0)
FOR CRYOGENIC SPACEBORN CMOS TESTING AND OPTIMIZATION (2000) (0)
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors (2010) (0)
(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method (2014) (0)
Impact of generation centers on the retention time in 1T-FBRAM (2012) (0)
Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature (2003) (0)
Effect of biaxial mechanical strain in the analog operation of fully depleted SOI transistors as a function of temperature (2011) (0)
LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric (2011) (0)
Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films (2000) (0)
The assessment of border traps in high-mobility channel materials (2015) (0)
Defect Creation and Passivation by Hydrogen Plasma in Silicon and Germanium (2010) (0)
(Invited) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling (2022) (0)
Recent developments in understanding and modeling of defects in Czochralski germanium (2010) (0)
Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs (2013) (0)
Multi-gate devices for the 32-nm node and beyond: advantages and issues (2008) (0)
Low frequency noise and fin width study of Si passivated Ge pFinFETs (2016) (0)
(Invited) Electrical Activity of Extended Defects in III-V Semiconductors (2019) (0)
Elastic Relaxation Evaluation in SiGe/Si Hetero-Epitaxial Structures (2011) (0)
High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation (2000) (0)
Profiling of border traps at GeSn and high-K oxide interface (2014) (0)
Structural Variation and Its Influence on the 1/f Noise of a-Si1−xRux Thin Films Embedded with Nanocrystals (2019) (0)
Thermal oxygen donors with an anomalous small electron capture cross section (1998) (0)
Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices (1995) (0)
Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures (2008) (0)
Impac to fth esubstrat eo nth elow-frequenc ynois eo fsilicon n 1 pjunctio ndiodes (2001) (0)
The Operation of Partially Depleted SOI Inverters from Room Down to Liquid Helium Temperature (1994) (0)
RTS noise in submicron MOSFETs (1996) (0)
Invited: The Impact of a (Si)Ge Heterojunction on the Analog Performance of Vertical Tunnel FETs (2014) (0)
A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon (2003) (0)
Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior (2010) (0)
Challenges in ultra-shallow junction technology (2018) (0)
Electrical Activity of Iron and Copper in Si, SiGe and Ge (2018) (0)
The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As (2019) (0)
Recent and forthcoming publications in pss: Phys. Status Solidi RRL 8/2016 (2016) (0)
Generation-recombination noise in advanced CMOS devices (2016) (0)
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies (2021) (0)
The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs (2014) (0)
Subthreshold Currents in High Resistivity Silicon p-MOSFETs Operating at Cryogenic Temeperatures (1994) (0)
Two-sided read window observed on UTBOX SOI 1T-DRAM (2013) (0)
Comparison of cryogenic performance of metal-gate MOSFETs with SiON and HfSiON gate dielectrics (2006) (0)
Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain (2016) (0)
Threshold voltage modeling for DT UTBB SOI in different operation modes (2015) (0)
Noise figure of BJT common-emitter amplifier at low frequencies (1997) (0)
Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body (2002) (0)
Tin-related deep levels in proton-irradiated n-type silicon. (2000) (0)
Reverse current transient behavior of pGeSn/nGe diodes (2015) (0)
Epitaxy for Strain Engineering (2014) (0)
Low temperature performance of proton irradiated strained SOI FinFET (2017) (0)
The "U" Shape Behavior of GIFBE in Function of Back Gate Bias in FinFETs (2009) (0)
Deep-level transient spectroscopy study of quenched-in defects in germanium (2014) (0)
Operational and reliability aspects of RTS (2017) (0)
The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon (2002) (0)
Biasdependence ofgate oxide degradation of90 nmCMOStransistors under 60MeVproton irradiation (2005) (0)
Radiation Hardness Studies of Silicon Technologies for Space Applications (1994) (0)

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