Eddy Roger Simoen
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Why Is Eddy Roger Simoen Influential?
(Suggest an Edit or Addition)Eddy Roger Simoen's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Germanium-based technologies : from materials to devices (2007) (520)
- Radiation Effects in Advanced Semiconductor Materials and Devices (2002) (395)
- Origin of NBTI variability in deeply scaled pFETs (2010) (297)
- On the flicker noise in submicron silicon MOSFETs (1999) (272)
- Explaining the amplitude of RTS noise in submicrometer MOSFETs (1992) (142)
- Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium (2005) (124)
- Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results (2008) (113)
- "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS (2003) (113)
- $1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks (2009) (106)
- Ion-implantation issues in the formation of shallow junctions in germanium (2006) (105)
- Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013) (99)
- Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness (2004) (97)
- NBTI from the perspective of defect states with widely distributed time scales (2009) (95)
- P implantation doping of Ge: Diffusion, activation, and recrystallization (2006) (91)
- Diffusion, activation, and regrowth behavior of high dose P implants in Ge (2006) (85)
- The decrease of ‘‘random telegraph signal’’ noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation (1992) (79)
- Shallow Junction Ion Implantation in Ge and Associated Defect Control (2005) (77)
- A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100) (2009) (71)
- Impact strain engineering on gate stack quality and reliability (2008) (71)
- Challenges and opportunities in advanced Ge pMOSFETs (2012) (70)
- Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions (2008) (70)
- Random Telegraph Signal: a local probe for single point defect studies in solid-state devices (2002) (70)
- Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K (1988) (69)
- Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs (2011) (69)
- Impact of oxygen related extended defects on silicon diode characteristics (1995) (66)
- Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects (2013) (63)
- Germanium for advanced CMOS anno 2009: a SWOT analysis (2009) (60)
- The kink-related excess low-frequency noise in silicon-on-insulator MOST's (1994) (58)
- The low-frequency noise behaviour of silicon-on-insulator technologies (1996) (58)
- Millisecond flash lamp annealing of shallow implanted layers in Ge (2009) (56)
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature (2013) (54)
- Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs (2013) (53)
- Reliability Comparison of Triple-Gate Versus Planar SOI FETs (2006) (52)
- Low-frequency noise in silicon-on-insulator devices and technologies (2007) (52)
- Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks (2006) (51)
- Brother Silicon, Sister Germanium (2006) (50)
- On the diffusion and activation of ion-implanted n-type dopants in germanium (2009) (50)
- Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories (2013) (50)
- On the diffusion and activation of n-type dopants in Ge (2012) (49)
- Geometry Dependence of Total-Dose Effects in Bulk FinFETs (2014) (49)
- The behavior of silicon p‐n junction‐based devices at liquid helium temperatures (1991) (48)
- Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics (2011) (48)
- Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs (2012) (47)
- Impact of silicidation on the excess noise behaviour of MOS transistors (1995) (47)
- Freeze-out effects on NMOS transistor characteristics at 4.2 K (1989) (47)
- InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models (2014) (45)
- Photoluminescence of bulk germanium (2012) (45)
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016) (44)
- Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors (2004) (43)
- Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS (2015) (42)
- Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation (2011) (42)
- Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization (1998) (41)
- Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs (2004) (41)
- (Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare (2011) (41)
- Extraction of the minority carrier recombination lifetime from forward diode characteristics (1995) (40)
- Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors (1996) (40)
- Low-Frequency Noise Performance of HfO2-Based Gate Stacks (2005) (39)
- Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs (2005) (39)
- Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs (2012) (39)
- Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors (2007) (38)
- Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs (2012) (38)
- Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components (2003) (35)
- A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors (2007) (35)
- Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation (2007) (35)
- On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions (2009) (35)
- Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors (2003) (34)
- Behavior of triple gate Bulk FinFETs with and without DTMOS operation (2011) (34)
- Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing (2011) (34)
- Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates (2006) (34)
- Optimized Diode Analysis of Electrical Silicon Substrate Properties (1998) (34)
- Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes (2004) (33)
- The charge transport in a silicon resistor at liquid-helium temperatures (1990) (33)
- Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodes (1996) (32)
- Correlation between DLTS-Measurements and the Performance of High Purity Germanium Detectors (1982) (32)
- Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices (2016) (32)
- Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors (2003) (32)
- Study of ohmic contacts to n-type Ge: Snowplow and laser activation (2011) (32)
- Metals in germanium (2006) (32)
- Extended Defects in Germanium (2009) (32)
- Impact of the substrate on the low‐frequency noise of silicon n+p junction diodes (1995) (31)
- Formation of germanium shallow junction by flash annealing (2007) (31)
- Gate electrode effects on low-frequency (1/ f) noise in p-MOSFETs with high-? dielectrics (2006) (31)
- Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness (2001) (31)
- Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs (2010) (31)
- Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack (2007) (31)
- Tunneling 1/ f ? noise in 5 nm HfO 2/2.1 nm SiO 2 gate stack n-MOSFETs (2005) (31)
- Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme (2014) (31)
- Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum (2011) (30)
- Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices (2007) (30)
- Size dependence of microscopic Hall sensor detection limits. (2009) (30)
- Random Telegraph Signals in Semiconductor Devices (2016) (30)
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015) (30)
- D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors (1995) (29)
- Low frequency noise characterization in n-channel FinFETs (2012) (29)
- CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance (2019) (29)
- Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density (2000) (29)
- Low-frequency (1/f) noise behavior of locally stressed HfO/sub 2//TiN gate-stack pMOSFETs (2006) (29)
- Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon (2002) (29)
- Analytical model for the kink in nMOSTs operating at Liquid Helium Temperatures (LHT) (1990) (29)
- Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs (2006) (28)
- Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers (1993) (28)
- Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs (2017) (28)
- Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity (2001) (28)
- Extended defects in germanium : fundamental and technological aspets (2009) (28)
- Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology (2009) (28)
- Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques (2002) (27)
- Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs (1996) (27)
- Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM (2012) (27)
- Gate Influence on the Layout Sensitivity of $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}\ \hbox{S/D}$ and $\hbox{Si}_{1 - y}\hbox{C}_{y}\ \hbox{S/D}$ Transistors Including an Analytical Model (2008) (26)
- The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering (2012) (26)
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures (2017) (26)
- Signature and capture cross section of copper-related hole traps in p-type high-purity germanium (1986) (26)
- A deep-level transient spectroscopy study of transition metals in n-type germanium (2006) (26)
- On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise (2013) (26)
- High-temperature performance of state-of-the-art triple-gate transistors (2007) (26)
- In Situ Phosphorus Doping of Germanium by APCVD (2006) (26)
- Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation (2001) (26)
- Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures (2009) (25)
- Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements (2013) (25)
- What Do We Know about Hydrogen-Induced Thermal Donors in Silicon? (2009) (25)
- DLTS of gold impurities in germanium (1987) (25)
- A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique (2010) (25)
- Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells (2016) (25)
- DLTS of the third acceptor level of substitutional copper in germanium (1989) (25)
- Mitigating Dark Current for High-Performance Near-Infrared Organic Photodiodes via Charge Blocking and Defect Passivation. (2021) (25)
- Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium (2009) (24)
- Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation (2004) (24)
- Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation (2010) (24)
- Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics (2014) (24)
- Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium (2006) (24)
- Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology (2005) (23)
- Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs (2008) (23)
- Low-Frequency ( 1 ∕ f ) Noise Performance of n- and p-MOSFETs with Poly- Si ∕ Hf -Based Gate Dielectrics (2006) (23)
- On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors (2005) (23)
- Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium (2008) (23)
- Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon (2002) (23)
- Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects (2008) (23)
- Si versus Ge for future microelectronics (2010) (23)
- Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs (1993) (22)
- On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013) (22)
- Record low contact resistivity to n-type Ge for CMOS and memory applications (2010) (22)
- High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions (2011) (22)
- Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs (1998) (22)
- Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon (2000) (22)
- Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode (2014) (22)
- Anomalous kink-related excess noise in MOSFETs at 4.2 K (1991) (22)
- Recent Trends in Bias Temperature Instability (2011) (22)
- Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs (2009) (22)
- Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs (2012) (21)
- Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies (1999) (21)
- A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes (2010) (21)
- The 1/f/sup 1.7/ noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide (2002) (21)
- Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs (2008) (21)
- Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM (2013) (21)
- On the Low-Frequency Noise of pMOSFETs With Embedded SiGe Source/Drain and Fully Silicided Metal Gate (2007) (21)
- Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs (2014) (21)
- The importance of the internal bulk-source potential on the low temperature kink in NMOSTs (1991) (21)
- RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism (2016) (21)
- (Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics (2016) (21)
- A DLTS Study of SiO2 and SiO2/SiNx Surface Passivation of Silicon (2011) (21)
- Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates (2011) (21)
- Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface (1999) (20)
- Performance and Reliability of Strained-Silicon nMOSFETs With SiN Cap Layer (2007) (20)
- Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si (2012) (20)
- The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium (2007) (20)
- Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor (1991) (20)
- 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates (2006) (20)
- Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs (2004) (20)
- A low-frequency noise study of gate-all-around SOI transistors (1993) (20)
- Short-channel radiation effect in 60 MeV proton irradiated 0.13 /spl mu/m CMOS transistors (2003) (20)
- Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates? (2009) (19)
- Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium (2004) (19)
- Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination (2009) (19)
- Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors (2014) (19)
- The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium (1985) (19)
- The Perspectives of Silicon‐on‐Insulator Technologies for Cryogenic Applications (1994) (19)
- The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. I. The kink‐related counterclockwise hysteresis regime (1993) (19)
- Junctionless versus inversion-mode lateral semiconductor nanowire transistors (2018) (19)
- Analytical techniques for electrically active defect detection (2015) (19)
- Deep level transient spectroscopy of transition metal impurities in germanium (2007) (19)
- Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS (2001) (18)
- Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions (2011) (18)
- Accurate extraction of the diffusion current in silicon p-n junction diodes (1998) (18)
- Low-Frequency Noise Characterization of Strained Germanium pMOSFETs (2011) (18)
- Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes (2001) (18)
- On the impact of the capture rates on the generation/recombination lifetime ratio of a single deep level (1999) (18)
- Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate (2005) (18)
- Cryogenic operation of FinFETs aiming at analog applications (2009) (18)
- Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks (2006) (17)
- Electronic properties of titanium and chromium impurity centers in germanium (2009) (17)
- Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn. (2016) (17)
- Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015) (17)
- Defect engineering for shallow n‐type junctions in germanium: Facts and fiction (2016) (17)
- Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation (2006) (17)
- Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates (2005) (17)
- Peripheral current analysis of silicon p–n junction and gated diodes (2000) (17)
- Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics (2007) (17)
- Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells (2012) (17)
- Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs (1997) (17)
- Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs (2012) (17)
- Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C (2000) (17)
- On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties (1994) (17)
- Germanium doping for improved silicon substrates and devices (2011) (17)
- Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective (2018) (16)
- Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs (2004) (16)
- On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric (2009) (16)
- Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs (2003) (16)
- Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs (2011) (16)
- Implantation defects and n-type doping in Ge and Ge rich SiGe (2008) (16)
- Process control & integration options of RMG technology for aggressively scaled devices (2012) (16)
- Detailed structural and electrical characterization of plated crystalline silicon solar cells (2018) (16)
- Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits (2019) (16)
- Static and low-frequency noise characteristics of n + p junction diodes fabricated in different silicon substrates (1995) (16)
- On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack (2008) (16)
- Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs (2009) (16)
- Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs (2020) (16)
- Low-frequency noise in polysilicon-emitter bipolar transistors (2002) (16)
- Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes (2000) (15)
- Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions (2006) (15)
- Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation (2005) (15)
- Sidewall crystalline orientation effect of post-treatments for a replacement metal gate bulk fin field effect transistor. (2013) (15)
- DLTS of nickel impurities in germanium (1992) (15)
- 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor (2013) (15)
- Parameter Extraction of MOSFETs Operated at Low Temperature (1996) (15)
- Invited) Status and Trends in Ge CMOS Technology (2013) (15)
- Systematic study of shallow junction formation on germanium substrates (2011) (15)
- Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors (1998) (15)
- Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities (2005) (15)
- A model for MOS gate stack quality evaluation based on the gate current 1/f noise (2008) (15)
- Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs (2015) (15)
- Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs (2008) (15)
- Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs (2010) (15)
- Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2 (2008) (15)
- Review—Device Assessment of Electrically Active Defects in High-Mobility Materials (2016) (15)
- Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs (2008) (15)
- p-n junction peripheral current analysis using gated diode measurements (1998) (14)
- Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon (2005) (14)
- Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology (2017) (14)
- Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures (2018) (14)
- Endurance of One Transistor Floating Body RAM on UTBOX SOI (2014) (14)
- The low-frequency noise behaviour of graded-channel SOI nMOSFETs (2007) (14)
- Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs (2009) (14)
- On the geometry dependence of the 1/f noise in CMOS compatible junction diodes (1999) (14)
- DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory (2013) (14)
- Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes (2002) (14)
- The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures (2012) (14)
- Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam (2016) (14)
- Defect profiling in FEFET Si:HfO2 layers (2020) (14)
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013) (14)
- Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias (2004) (14)
- A deep-level analysis of Ni–Au/AlN/(1 1 1) p+-Si metal–insulator–semiconductor capacitors (2011) (14)
- Defect assessment and leakage control in Ge junctions (2014) (14)
- A Statistical Approach to Microdose Induced Degradation in FinFET Devices (2009) (14)
- Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs (2016) (14)
- Generation and annealing behaviour of MeV proton and /sup 252/Cf irradiation induced deep levels in silicon diodes (1994) (14)
- Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation (2011) (14)
- Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra (2014) (14)
- Flicker noise in deep submicron nMOS transistors (2000) (14)
- Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions (2011) (13)
- Electrically active defects at AlN/Si interface studied by DLTS and ESR (2012) (13)
- Random telegraph signals in silicon‐on‐insulator metal‐oxide‐ semiconductor transistors (1994) (13)
- Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets (2019) (13)
- On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films (2016) (13)
- DLTS and PL studies of proton radiation defects in tin-doped FZ silicon (2002) (13)
- Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics (2006) (13)
- Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs (2011) (13)
- Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors (1995) (13)
- DLTS of grown-in dislocations in p- and n- type high-purity germanium (1985) (13)
- Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement (2007) (13)
- Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance (2006) (13)
- Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors (2007) (13)
- Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs (2003) (13)
- Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs (2004) (13)
- Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs (2012) (13)
- A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium (2006) (13)
- Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio (2009) (13)
- Electrical properties of extended defects in strain relaxed GeSn (2018) (13)
- Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature (2001) (13)
- Distinction between silicon and oxide traps using single‐trap spectroscopy (2015) (13)
- Kink-related noise overshoot in SOI n-MOSFETs operating at 4.2 K (1992) (13)
- Degradation of GaN LEDs by electron irradiation (2010) (13)
- p‐n Junction Diagnostics to Determine Surface and Bulk Generation/Recombination Properties of Silicon Substrates (1999) (13)
- Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques (2007) (13)
- Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results (2017) (12)
- Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon (1997) (12)
- Kink-related low-frequency noise overshoot in Si NMOSTs at liquid helium temperatures (1992) (12)
- A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulator n‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures (1992) (12)
- On and off state hot carrier reliability in junctionless high-K MG gate-all-around nanowires (2015) (12)
- Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate (2013) (12)
- Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's (1993) (12)
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface (2011) (12)
- Anomalous latch-up behaviour of CMOS at liquid helium temperatures (1990) (12)
- Electrical Performance of Ge Devices (2007) (12)
- Defect engineering aspects of advanced Ge process modules (2008) (12)
- Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution (2018) (12)
- Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates (2006) (12)
- Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors (2005) (12)
- Investigation of Drain Current RTS Noise in Small Area Silicon MOS Transistors (1991) (12)
- Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation (2016) (12)
- The cryogenic operation of partially depleted silicon-on-insulator inverters (1995) (12)
- On the dechanneling of protons in Si [110] (2003) (12)
- The response of Si p - n junction diodes to proton irradiation (1996) (12)
- Defects, Junction Leakage and Electrical Performance of Ge pFET Devices (2009) (12)
- Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs (2012) (12)
- Correlation between deep-level parameters and energy resolution of p-type high purity Ge γ-detectors (1986) (12)
- Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium (2009) (12)
- NW-TFET analog performance for different Ge source compositions (2013) (12)
- Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs (2014) (12)
- Intrinsic voltage gain of Line-TFETs and comparison with other TFET and MOSFET architectures (2016) (12)
- Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes (2000) (12)
- Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs (2010) (12)
- Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes (1992) (12)
- RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application (2013) (11)
- Defects in Si foils fabricated by spalling at low temperature: electrical activity and atomic nature (2013) (11)
- Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology (2013) (11)
- Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs (2011) (11)
- A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress (1998) (11)
- Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well (2001) (11)
- Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes (2003) (11)
- Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics (2000) (11)
- Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs (2017) (11)
- Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation (2012) (11)
- Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodes (2013) (11)
- DC and low frequency noise performances of SOI p-FinFETs at very low temperature (2013) (11)
- High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors (2004) (11)
- Impact of cobalt silicidation on the low-frequency noise behavior of shallow p-n junctions (2000) (11)
- On the Effect of Lead on Irradiation Induced Defects in Silicon (2005) (11)
- Analytical model for the current-voltage characteristics of a silicon resistor at liquid helium temperatures (1990) (11)
- Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs (2010) (11)
- Low-frequency drain current noise behavior of InP based MODFET's in the linear and saturation regime (1998) (11)
- Fin shape influence on the analog performance of standard and strained MuGFETs (2010) (11)
- Point-Defect Generation in Ni-, Pd-, and Pt-Germanide Schottky Barriers on n -Type Germanium (2007) (11)
- Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates (2020) (11)
- Analysis of junction leakage in advanced germanium P+/n junctions (2007) (11)
- Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs (2015) (11)
- Impact of neutron irradiation on optical performance of InGaAsP laser diodes (2000) (11)
- Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (2018) (11)
- Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications (2014) (10)
- Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin-gate-oxide partially depleted SOI NMOSFETs (2005) (10)
- Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology (2018) (10)
- Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon (2006) (10)
- Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-κ/Metal-Gate pMOSFETs (2014) (10)
- Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications (2014) (10)
- Radiation damage in flash memory cells (2002) (10)
- Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016) (10)
- Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures (2016) (10)
- Short-channel pMOSTs in a high-resistivity silicon substrate. I. Analytical model (1992) (10)
- Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETs (2003) (10)
- Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification (2014) (10)
- Substrate effect on UTBB SOI nMOSFET (2013) (10)
- Diffusion and Gate Replacement: A New Gate-First High- $k$ /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry (2016) (10)
- Zero Temperature Coefficient behavior for advanced MOSFETs (2016) (10)
- Impact of 20-MeV /spl alpha/-ray irradiation on the V-band performance of AlGaAs pseudomorphic HEMTs (2000) (10)
- Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K (1997) (10)
- Photonic nanostructures for advanced light trapping in silicon solar cells: the impact of etching on the material electronic quality (2016) (10)
- P+/n junction leakage in thin selectively grown Ge-in-STI substrates (2010) (10)
- Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si (2007) (10)
- In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature (2014) (10)
- Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise (2014) (10)
- (Invited) Nano-Beam Diffraction: Crystal Structure and Strain Analysis at the Nanoscale (2010) (10)
- Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step (2003) (10)
- Processing Factors Impacting the Leakage Current and Flicker Noise of Germanium p + -n Junctions on Silicon Substrates (2008) (10)
- Extended-Defect Aspects of Ge-on-Si Materials and Devices (2010) (10)
- FISH SOI MOSFET: Modeling, Characterization and Its Application to Improve the Performance of Analog ICs (2011) (10)
- On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes (2017) (10)
- The low-frequency noise overshoot in partially depleted n-channel silicon-on-insulator twin-MOST's (1994) (10)
- The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime (1993) (10)
- Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFETs (1995) (10)
- Analog design with Line-TFET device experimental data: from device to circuit level (2020) (10)
- Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal-oxide-semiconductor transistors (vol 66, pg 598, 1995) (1995) (10)
- Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures (2021) (9)
- Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy (2010) (9)
- Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature (2006) (9)
- Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates (2019) (9)
- Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs (2014) (9)
- Electronic properties of iron and cobalt impurity centres in germanium (2012) (9)
- Gate stack engineering to enhance high-κ/metal gate reliability for DRAM I/O applications (2017) (9)
- Empirical relationship between the low‐frequency noise spectral density and the transconductance of silicon‐on‐insulator n‐channel metal‐oxide‐semiconductor transistors (1994) (9)
- Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes (2015) (9)
- Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle (2001) (9)
- Substrate current characteristics of Si N- and PMOST's at 4.2 K (1992) (9)
- Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions (2008) (9)
- Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio3 MIM Capacitors (2014) (9)
- Zero-Temperature-Coefficient of planar and MuGFET SOI devices (2010) (9)
- Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs (2009) (9)
- Defect-Related Excess Low-Frequency Noise in Ge-on-Si pMOSFETs (2011) (9)
- Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors (2013) (9)
- Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon (2006) (9)
- Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation (2001) (9)
- Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications (2016) (9)
- Bandlike and localized states of extended defects in n-type In0.53Ga0.47As (2018) (9)
- Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs (2006) (9)
- Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations (2012) (9)
- On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs (2012) (9)
- Enhanced dynamic threshold voltage UTBB SOI nMOSFETs (2015) (9)
- Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation (2003) (9)
- Low-frequency noise in triple-gate n-channel bulk FinFETs (2011) (9)
- Electrical Quality Assessment of Epitaxial Wafers Based on p-n Junction Diagnostics (1999) (9)
- TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs (2015) (8)
- Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation (2020) (8)
- Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes (2016) (8)
- The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks (2009) (8)
- Evidence for an alternative, hole‐trapping related random telegraph signal mechanism in n‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors (1993) (8)
- Impact of strain-engineering on the low-frequency noise performance of advanced MOSFETs (2006) (8)
- Low-Frequency Noise Study of p-Channel Bulk MuGFETs (2011) (8)
- The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon (2005) (8)
- Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction (2008) (8)
- Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET (2019) (8)
- Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices (2008) (8)
- Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view (2015) (8)
- Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors (1993) (8)
- Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K (1993) (8)
- Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition (2018) (8)
- (Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials (2013) (8)
- A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs (2014) (8)
- Transient response of silicon devices at 4.2 K. I. Theory (1991) (8)
- Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation (2007) (8)
- Characterization of Oxide Precipitates in Heavily B-Doped Silicon by Infrared Spectroscopy (2004) (8)
- Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs (2013) (8)
- Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs (2006) (8)
- DLTS and PTIS of new donors in oxygen-doped germanium (1982) (8)
- A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies (2014) (8)
- Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon (2003) (8)
- Defect analysis in UTBOX SOI nMOSFETs by low-frequency noise (2012) (8)
- Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks (2019) (8)
- Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration (2005) (7)
- A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs (1998) (7)
- 60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs (2001) (7)
- Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS (2006) (7)
- Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs (1999) (7)
- Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes (2003) (7)
- Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions (2009) (7)
- Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs (2008) (7)
- Influence of the pre-treatment anneal on Co-germanide Schottky contacts (2008) (7)
- Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium (2006) (7)
- Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance (1999) (7)
- Random Telegraph Signal Noise: A Probe for Hot-Carrier Degradation Effects in Submicrometer MOSFET's? (1992) (7)
- Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers using DLTS (2013) (7)
- Factors determining the damage coefficients and the low-frequency noise in MeV proton-irradiated silicon diodes (1998) (7)
- Metal In-Diffusion during Fe and Co-Germanidation of Germanium (2007) (7)
- Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography (1996) (7)
- Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions (2003) (7)
- Heavy Ion Damage in Ultra-Thin Gate Oxide SQl MOSFETs (2005) (7)
- Status and trends in Ge CMOS technology (2013) (7)
- Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect (2000) (7)
- Si1-xGex-Channel PFETs: Scalability, Layout Considerations and Compatibility with Other Stress Techniques (2011) (7)
- (Invited) Replacement Metal Gate/High-k Last Technology for Aggressively Scaled Planar and FinFET-Based Devices (2014) (7)
- Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 µm SiGe:C NPN HBT technology (2008) (7)
- Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation (2009) (7)
- Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons (2003) (7)
- Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides (2016) (7)
- Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices (2002) (7)
- Origin of wide retention distribution in 1T Floating Body RAM (2012) (7)
- Improved Analytical Model for ZTC Bias Point for Strained Tri-gates FinFETs (2010) (7)
- Impact of Gate Material on Low-frequency Noise of nMOSFETs with 1.5 nm SiON Gate Dielectric: Testing the Limits of the Number Fluctuations Theory (2005) (7)
- Treatments for reliability improvement in thick oxides diffusion and gate replacement I/O transistors (2017) (7)
- Random telegraph signal noise in advanced high performance and memory devices (2016) (7)
- Stress Techniques and Mobility Enhancement in FinFET Architectures (2013) (7)
- DLTS studies of high-temperature electron irradiated Cz n-Si (2004) (7)
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- Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs (2010) (7)
- Low frequency noise spectroscopy in rotated UTBOX nMOSFETs (2015) (7)
- Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium (2006) (7)
- Trap-Assisted Tunneling in Deep-Submicron Ge pFET Junctions (2010) (7)
- Stress analysis of Si1−xGex embedded source/drain junctions (2008) (7)
- <formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise in Drain and Gate Current of MOSFETs With High-<formula formulatype="inline"><tex Notation="TeX">$k$</tex></formula> Gate Stacks (2009) (7)
- A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon (2011) (7)
- DLTS of p-type Czochralski Si wafers containing processing-induced macropores (2011) (7)
- Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs (2003) (6)
- Low-Frequency Noise Analysis of gamma-irradiated p-channel Bulk MuGFETS (2010) (6)
- Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon (2001) (6)
- Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy (2015) (6)
- Estimating Temperature Dependence of Generation Lifetime Extracted from Drain Current Transients Model (2006) (6)
- DIBL Study Using Triple Gate Unstrained and Uniaxial/Biaxial Strained FinFETs (2009) (6)
- Potential and limitations of UTBB SOI for advanced CMOS technologies (2013) (6)
- Metastable charge-trapping effect in SOI nMOSTs at 4.2 K (1993) (6)
- Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes (2011) (6)
- Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects (2001) (6)
- Random telegraph noise: the key to single defect studies in nano-devices (2016) (6)
- Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs (2011) (6)
- Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 $\mu{\hbox {m}}$ SiGe:C NPN HBT Technology (2009) (6)
- HIGH ENERGY PARTICLE IRRADIATION EFFECTS ON THE LOW-FREQUENCY NOISE OF CZOCHRALSKI SILICON JUNCTION DIODES (1996) (6)
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- Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors (2011) (6)
- Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium (2016) (6)
- The low-frequency noise behaviour of Si n + p junction diodes fabricated on (1 0 0) and (1 1 1) substrates (1996) (6)
- Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge (2014) (6)
- The dependence of sense margin and retention time on front and back gate bias in UTBOX FBRAM (2012) (6)
- High-energy proton radiation induced defects in tin-doped n-type silicon (2001) (6)
- Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes (1995) (6)
- Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs (2007) (6)
- Shallow boron implantations in Ge and the role of the pre-amorphization depth (2008) (6)
- Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors (2003) (6)
- Study of recombination and transport characteristics in strain-relaxed Si–SiGe layers (2005) (6)
- Analysis of junctions formed in strained Si/SiGe substrates (2004) (6)
- Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions (2014) (6)
- On the origin of the 1∕f noise in shallow germanium p+-n junctions (2007) (6)
- Ge content dependence of radiation damage in Si1‐xGex source/drain p‐type metal oxide semiconductor field effect transistors (2013) (6)
- Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs (2018) (6)
- Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs (2015) (6)
- Deep levels in heat-treated and 252Cf-irradiated p-type silicon substrates with different oxygen content (1994) (6)
- Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs (2020) (6)
- Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si (2018) (6)
- A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures (2004) (6)
- Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures (2016) (6)
- Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures (2017) (6)
- Electrical Effects of a Single Extended Defect in MOSFETs (2016) (6)
- Influence of X-ray radiation on standard and uniaxial strained triple-gate SOI FinFETs (2013) (6)
- Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions (2011) (6)
- Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs (2005) (6)
- DLTS of silver in germanium: evidence for an amphoteric impurity (1989) (6)
- Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs (2018) (6)
- Influence of hot-carrier stress on the kink/hysteresis behaviour of NMOST's operating at liquid helium temperatures (1991) (6)
- TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective (2018) (6)
- The use of body ties in partially depleted SOI MOSTs operating at cryogenic temperatures (1994) (6)
- Effects of mechanical stress on polycrystalline-silicon resistors (2002) (6)
- Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain (2010) (6)
- Short-channel epitaxial germanium PMOS transistors (2010) (6)
- Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures (2016) (6)
- Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques (2006) (6)
- Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices (2012) (6)
- Analysis of the Silicon Film Thickness and the Ground Plane Influence on Ultra Thin Buried Oxide SOI nMOSFETs (2012) (6)
- Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs (2014) (6)
- Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON (2005) (6)
- Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks (2007) (6)
- Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs (2021) (6)
- On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions (2009) (6)
- Proton irradiation effects in silicon junction diodes and charge-coupled-devices☆ (1997) (6)
- Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs (1993) (6)
- Experimental Comparison between pTFET and pFinFET under Analog Operation (2013) (6)
- Back Gate Voltage Influence on the LDD SOI NMOSFET Series Resistance Extraction from 150 to 300 K (2000) (6)
- Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation (2011) (6)
- On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn? (2018) (6)
- Radiation damage of polycrystalline silicon films (2002) (6)
- Extended Defects Created by Light Ion Implantation in Ge (2008) (6)
- Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain (2007) (5)
- On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs (2007) (5)
- Study of the linear kink effect in PD SOI nMOSFETs (2007) (5)
- Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs (2009) (5)
- From 5G to 6G: will compound semiconductors make the difference? (2020) (5)
- Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs (1999) (5)
- Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon (2002) (5)
- Spectroscopic study of polysilicon traps by means of fast capacitance transients (2013) (5)
- The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications (2012) (5)
- Defect assessment of irradiated STI diodes (2002) (5)
- Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs (2007) (5)
- Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors (1997) (5)
- Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates (2013) (5)
- Study of recombination characteristics in MOCVD grown GaN epi-layers on Si (2017) (5)
- Understanding and optimizing the floating body retention in FDSOI UTBOX (2016) (5)
- Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale (2013) (5)
- Diffusion and Solubility of Dopants in Germanium (2007) (5)
- Effective lifetime of minority carriers in silicon: The role of heat- and hydrogen plasma treatments (2004) (5)
- (Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials (2015) (5)
- Substrate effect on threshold voltage on lonh and short channel UTBB SOI nMOSFET (2014) (5)
- Alternative random telegraph signal mechanisms in silicon-on-insulator MOS transistors (1993) (5)
- On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon (1995) (5)
- Substrate bias effect on Ge pMOSFETs with and without halo (2008) (5)
- GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics (2012) (5)
- (Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs (2017) (5)
- (Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions (2010) (5)
- Inversion Layer Quantization Impact on the Interpretation of 1/f Noise in Deep Submicron CMOS Transistors (2002) (5)
- Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior (2019) (5)
- Ground Plane influence on UTBB SOI nMOSFET analog parameters (2015) (5)
- Influence of underlap on UTBB SOI MOSFETs in dynamic threshold mode (2014) (5)
- Operation of Majority and Minority Carrier MOSFET's at Liquid Helium Temperature (1988) (5)
- Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies (2000) (5)
- A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon (2007) (5)
- Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond (2021) (5)
- A compact, broad-range, physical SPICE model extension for the gamma-radiation induced beta-degradation in a discrete SiGe HBT (2006) (5)
- GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes (2016) (5)
- Deep Levels in W-Doped Czochralski Silicon (2014) (5)
- Influence of high temperature on substrate effect of UTBB SOI nMOSFETs (2014) (5)
- Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors (2014) (5)
- γ-irradiation hardness of short-channel nMOSFETs fabricated in a SOI technology (2002) (5)
- High-temperature characterization of advanced strained nMUGFETs (2010) (5)
- Effect of interface states on 1T-FBRAM cell retention (2012) (5)
- Temperature Influences on FinFETs with Undoped Body (2007) (5)
- Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation (2001) (5)
- Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme (2014) (5)
- Comparison of Charge Pumping and $1/f$ Noise in Irradiated Ge pMOSFETs (2012) (5)
- Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS (1997) (5)
- On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications (2018) (5)
- NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance (2011) (5)
- Invited CommunicationPerspectives of the cryo-electronics for the year 2000 (1998) (5)
- Analog performance of GaN/AlGaN high-electron-mobility transistors (2021) (5)
- Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Source/Drain Junctions (2009) (5)
- Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes (2016) (5)
- Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors (2004) (5)
- Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime (2018) (5)
- 40 years of 1/f noise modelling (1997) (5)
- A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K (1995) (5)
- Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality (2018) (5)
- Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time (2014) (5)
- Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy (2017) (5)
- RTS noise due to lateral isolation related defects in submicron nMOSFETs (1998) (5)
- The Noise in Submicron SOI MOSFETs With 2.5 nm Nitrided Gate Oxide (2002) (4)
- XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method (2012) (4)
- OCTO FinFET (2013) (4)
- Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation (2001) (4)
- Experimental analysis of differential pairs designed with line tunnel FET devices (2017) (4)
- Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments (1995) (4)
- Low-Frequency Noise Characterization of Germanium n-Channel FinFETs (2020) (4)
- The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes (1995) (4)
- Diode analysis of advanced processing modules for deep-submicrometer CMOS technology nodes (2003) (4)
- Radiation Damage in Silicon MOS Devices (2002) (4)
- Alternative channel materials for MOS devices (2008) (4)
- Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation (2005) (4)
- Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs (2004) (4)
- Calculation of FeB pairing in p-Si at room temperature for low B-concentrations (1991) (4)
- Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs (2013) (4)
- Radiation defects in STI silicon diodes and their effects on device performance (2001) (4)
- Impact of irradiations performed at liquid helium temperatures on the operation of 0.7 /spl mu/m CMOS devices and read-out circuits (2004) (4)
- A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon (2003) (4)
- Impact of Selective Epitaxial Growth and Uniaxial/Biaxial Strain on DIBL Effect Using Triple Gate FinFETs (2010) (4)
- Germanium … The Semiconductor of Tomorrow? (2006) (4)
- Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon (2003) (4)
- Leakage current study of Si1−xCx embedded source/drain junctions (2008) (4)
- Bias Dependence of Gate Oxide Degradation of 90 nm CMOS Transistors Under 60 MeV Proton Irradiation (2005) (4)
- On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs (2012) (4)
- Effective hole mobility and low-frequency noise characterization of Ge pFinFETs (2016) (4)
- High temperature influence on analog parameters of Bulk and SOI nFinFETs (2015) (4)
- Influence of different UTBB SOI technologies on analog parameters (2016) (4)
- Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique (2009) (4)
- Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements (2006) (4)
- Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation (2002) (4)
- On the Electrical Activity of Oxygen-Related Extended Defects in Silicon (1994) (4)
- Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters (2015) (4)
- Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs (2015) (4)
- Substrate current and kink analysis of MOSFETs at liquid helium temperatures (2000) (4)
- Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates (2009) (4)
- Radiation damage in Si photodiodes by high-temperature irradiation (2003) (4)
- Hot Implantations of P into Ge: Impact on the Diffusion Profile (2017) (4)
- Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs (2000) (4)
- Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETs (2013) (4)
- Neutron-induced failure in super-junction, IGBT, and SiC power devices (2011) (4)
- Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena (2018) (4)
- On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy (2017) (4)
- Electronic properties of manganese impurities in germanium (2015) (4)
- Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors (2009) (4)
- Effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs (2003) (4)
- Reliability Engineering Enabling Continued Logic for Memory Device Scaling (2019) (4)
- Opposite trends between digital and analog performance for different TFET technologies (2018) (4)
- Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K (2016) (4)
- Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018) (4)
- Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance (1992) (4)
- SiGe band-to-band tunneling calibration based on p-i-n diodes: Fabrication, measurement and simulation (2013) (4)
- Low-frequency noise analysis of DRAM peripheral transistors with La cap (2014) (4)
- Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View (2015) (4)
- Low-frequency gate current noise of InP based HEMTs (1999) (4)
- Impact ionization related phenomena in Si MOSFETs operating at cryogenic temperatures (1997) (4)
- Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs (1993) (4)
- Performance of differential pair circuits designed with line tunnel FET devices at different temperatures (2018) (4)
- Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities (2001) (4)
- Fin width influence on analog performance of SOI and bulk FINFETs (2014) (4)
- Radiation Damage Of InGaAs Photodiodes By High Energy Particles (1997) (4)
- Grown-in defects in germanium (2007) (4)
- Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic (2017) (4)
- Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon (2003) (4)
- Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques (2007) (4)
- Effects of electron and proton irradiation on embedded SiGe source/drain diodes (2008) (4)
- Low temperature behaviour of submicron accumulation mode p-channel SOI MOSFETs (1992) (4)
- Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance (2009) (4)
- Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors (2020) (4)
- Evidence for short-channel effect in the radiation response of 0.18µm CMOS transistors (2000) (4)
- On the Origin of the 1/f 1.7 Noise in Deep Submicron Partially Depleted SOI Transistors (2002) (4)
- Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs (2011) (4)
- Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias (2013) (4)
- Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation (2004) (4)
- Device Performance as a Metrology Tool to Detect Metals in Silicon (2019) (4)
- Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM (2001) (4)
- Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film (2013) (4)
- Insights in low frequency noise of advanced and high-mobility channel transistors (2012) (4)
- Transconductance ramp effect in high-k triple gate sSOI nFinFETs (2009) (4)
- Influence of High Temperature on UTBB SOI nMOSFETs with and without Ground Plane (2013) (4)
- Small-signal a.c. impedance of an Si resistor at liquid-helium temperatures (1991) (4)
- On the Electrical Characterization of Grain Boundaries in Multicrystalline Silicon (2011) (4)
- Pulsed I-V on TFETs: Modeling and Measurements (2017) (4)
- Radiation Environments and Component Selection Strategy (2002) (4)
- P implantation on doping of Ge: diffusion, activation, re-crystallization (2005) (4)
- Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses (2016) (4)
- The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017) (4)
- Invited) Advanced Semiconductor Devices for Future CMOS Technologies (2015) (3)
- High Temperature Influence on the Trade-off between gm/ID and fT of nanosheet NMOS Transistors with Different Metal Gate Stack (2021) (3)
- Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation (2009) (3)
- Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs (2006) (3)
- Defect Engineering Considerations for Strained Silicon Substrates (2006) (3)
- Threshold Voltage Modeling for Dynamic Threshold UTBB SOI in Different Operation Modes (2015) (3)
- The Low‐frequency Noise of Strained Silicon n‐MOSFETs (2005) (3)
- Temperature influence on strained nMuGFETs after proton radiation (2013) (3)
- Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures (2020) (3)
- Optimization of CMOS technology and design for deep cryogenic analog circuits (1991) (3)
- An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method (2020) (3)
- Vacancy Clusters in Germanium (2007) (3)
- Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells (2017) (3)
- Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs (2019) (3)
- Reliability and retention of floating body RAM on bulk FinFET (2012) (3)
- Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs (2006) (3)
- Study of Neutron Irradiation Effects on SOI and Strained SOI MuGFETs Assessed by Low-Frequency Noise (2010) (3)
- Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes (2004) (3)
- Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy (2011) (3)
- Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes (1996) (3)
- Back bias influence on analog performance of pTFET (2013) (3)
- Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view (2019) (3)
- Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation (2006) (3)
- Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 K (1998) (3)
- Low Temperature Analog Operation of Triple-Gate FinFETs with HfO2 Dielectrics and TiN Gate Material (2006) (3)
- Static characteristics of gate-all-around SOI MOSFETs at cryogenic temperatures (1995) (3)
- Noise and THI reliability indicators for thin film resistors (1996) (3)
- Co-Germanide Schottky Contacts on Ge (2007) (3)
- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs (2005) (3)
- Effect of deep levels and interface states on the minority carrier lifetime control of trench-IGBTs by electron irradiation (2006) (3)
- Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes (2016) (3)
- Technology development challenges for advanced group IV semiconductor devices (2016) (3)
- Defect Aspects of Ge-on-Si Materials and Devices (2009) (3)
- Temperature influence on analog figures-of-merit of nanosheet nMOSFET devices for sub-7nm technology node (2020) (3)
- Temperature activation of UTBOX SOI device characteristics with different source/drain engineering (2012) (3)
- Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs (2012) (3)
- Analog Operation of Uniaxially Strained FD SOI nMOSFETs in Cryogenic Temperatures (2007) (3)
- Gate length impact on UTBOX FBRAM devices (2012) (3)
- Impact of Ge Content and Recess Depth on the Leakage Current in Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}/\hbox{Si}$ Heterojunctions (2011) (3)
- Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy (2021) (3)
- Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs (2007) (3)
- Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics (2006) (3)
- Radiation damage of Si photodiodes by high-temperature irradiation (2003) (3)
- Modeling the gate current 1/f noise and its application to advanced CMOS devices (2008) (3)
- Comparison of Current Mirrors Designed with TFET or FinFET Devices for Different Dimensions and Temperatures (2015) (3)
- The multi-stable behaviour of SOI-NMOS transistors at low temperatures (1988) (3)
- Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments (2020) (3)
- Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers (2008) (3)
- Influence of the substrate on the degradation of irradiated Si diodes (1996) (3)
- Enhanced dynamic threshold UTBB SOI at high temperature (2015) (3)
- Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS (2011) (3)
- Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures (1995) (3)
- Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers (2006) (3)
- Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs (2011) (3)
- (Invited) Impact of Processing Factors on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire FETs (2021) (3)
- Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures (1998) (3)
- Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors (2019) (3)
- Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates (2009) (3)
- On the variability and front-back coupling of the low-frequency noise in UTBOX SOI nMOSFETs (2012) (3)
- Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers (1999) (3)
- Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal (2020) (3)
- Spacer Length and Tilt Implantation Influence on Scaled UTBOX FD MOSFETs (2012) (3)
- Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Barriers on N-Type Germanium Substrates (2006) (3)
- Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties (2016) (3)
- Nanowire & Nanosheet Fets for Advanced Ultra-Scaled, High-Density Logic and Memory Applications (2020) (3)
- Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers (2013) (3)
- Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs (2005) (3)
- Unity gain frequency on FinFET and TFET devices (2014) (3)
- Impact of In Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors (2019) (3)
- The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates (1994) (3)
- Investigation of the Gate Length and Drain Bias Dependence of the ZTC Biasing Point Instability of N- and P-Channel PD SOI MOSFETs (2009) (3)
- Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques (2008) (3)
- Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices (2013) (3)
- Study of low frequency noise in vertical NW-Tunnel FETs with different source compositions (2015) (3)
- Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes (2016) (3)
- An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices (2012) (3)
- On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers (2005) (3)
- Deep levels in silicon–oxygen superlattices (2015) (3)
- The Low-Frequency Noise Behavior of Gate-All-Around Soi Transistors (1992) (3)
- Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation (2014) (3)
- Influence of proton radiation and strain on nFinFET zero temperature coefficient (2016) (3)
- Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18um CMOS (2000) (3)
- A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States (2011) (3)
- On the relationship between the bulk recombination lifetime and the excess {1}/{f} noise in silicon p-n junction diodes (1996) (3)
- Biaxial Stress Simulation and Electrical Characterization of Triple-Gate SOI nMOSFETs (2012) (3)
- Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current (2002) (3)
- Effects of electron irradiation on SiGe devices (2010) (3)
- Temperature impact on the lorentzian noise induced by electron valance band tunneling in partiallydepleted SOI nMOSFETs (2006) (3)
- A unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors (1997) (3)
- Experimental validation of electromigration by low frequency noise measurement for advanced copper interconnects application (2015) (3)
- Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs (2013) (3)
- A consistent experimental method for the extraction of the threshold voltage of SOI nMOSFETs from room down to cryogenic temperatures (1993) (3)
- Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies (2010) (3)
- Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures (2015) (3)
- Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets (2021) (3)
- On the Basic Correlation between Polysilicon Resistor Linearity, Matching and 1/f Noise (1999) (3)
- A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000) (3)
- (Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era (2020) (3)
- Low-frequency noise of advanced memory devices (2015) (3)
- Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures (2000) (3)
- Opto-Electronic Components for Space (2002) (3)
- Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices (2015) (3)
- Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer (2007) (3)
- Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs (2015) (3)
- Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions (2007) (3)
- Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs (1999) (2)
- Transport mechanism influence on Nanowire-TFETanalog performance as a function of temperature (2014) (2)
- An editorial on the recent advances in high and low temperature electronics (2017) (2)
- The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices (2015) (2)
- Radiation source dependence of device performance degradation for 4H-SiC MESFETs (2006) (2)
- RTA and FLA of ultra-shallow implanted layers in Ge (2008) (2)
- Mechanical stress of the electrical performance of polycrystalline-silicon resistors (2001) (2)
- Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance (1999) (2)
- Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency (2016) (2)
- Strain influence on analog performance of single-gate and FinFET SOI nMOSFETs (2008) (2)
- Junction formation in Ge by ion implantation (2007) (2)
- Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature (2014) (2)
- Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs (1995) (2)
- Impact of the TiN metal gate thickness on gate induced floating body effect (2009) (2)
- Source/Drain junction integration issues in submicron Ge MOSFETs (2008) (2)
- Gate induced floating body effects in SiON and HfO2 triple gate SOI FinFETs (2007) (2)
- Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs (2011) (2)
- Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs (2005) (2)
- Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014) (2)
- Negative bias temperature instabilities in pMOSFETS: Ultrafast characterization and modelling (2015) (2)
- Defect control in advanced high-mobility substrates (2005) (2)
- Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs (2015) (2)
- Silicon-based cryogenic electronics: From physical curiosity to quantum computing (2003) (2)
- Improving the low-frequency noise performance of input/output DRAM peripheral pMOSFETs (2017) (2)
- Hot-carrier degradation of nMOSTs stressed at 4.2 K (1993) (2)
- Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013) (2)
- The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors (2007) (2)
- Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors (2006) (2)
- Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction (2019) (2)
- The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters (2014) (2)
- DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon (2005) (2)
- Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging (2019) (2)
- Ge and III/V devices for advanced CMOS (2009) (2)
- Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques (2009) (2)
- Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress (2020) (2)
- Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors (2004) (2)
- Chapter 2 – Silicon Devices and Circuits (2001) (2)
- RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs (1997) (2)
- Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates (2019) (2)
- Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs (2007) (2)
- Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices (2010) (2)
- Do we have to worry about extended defects in high-mobility materials? (2018) (2)
- Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs (2015) (2)
- P-N- Junction Peripheral Current Analysis using Gated Diode Measurements (1999) (2)
- Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon (2002) (2)
- Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon (1995) (2)
- The activation energy dependence on the electric field in UTBOX SOI FBRAM devices (2013) (2)
- Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers (2013) (2)
- Process- and irradiation-induced defects in silicon devices (1996) (2)
- A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon (2003) (2)
- Proton Radiation Effects on the Analog Performance of Bulk n- and p-FinFETs (2015) (2)
- Harmonic distortion of strained triple-gate FinFETs at low temperatures (2010) (2)
- Deep level investigation of INGAAS on INP layer (2017) (2)
- On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs (2020) (2)
- Gate Bias Effect on the 60-MeV Proton Irradiation Response of 65-nm CMOS nMOSFETs (2006) (2)
- High Purity Silicon 11 (2010) (2)
- Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference (1997) (2)
- Low frequency noise characterization of advanced and end of the roadmap devices (2014) (2)
- Increase in Oxide Trap Density Due to the Implementation of High-k and Al2O3 Cap Layers in Thick-Oxide Input-Output Transistors for DRAM Applications (2015) (2)
- Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient (2016) (2)
- Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs (2021) (2)
- Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation (2013) (2)
- Current transients in almost-ideal Czochralski silicon p–n junction diodes (1999) (2)
- Germanium Doping of Si Substrates for Improved Device Characteristics and Yield (2010) (2)
- Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach (2015) (2)
- Floating body effect on n-channel bulk FinFETs for memory application (2014) (2)
- Liquid-helium temperature hot-carrier degradation of Si p-channel MOSTs (1993) (2)
- Two-stage amplifier design based on experimental Line-Tunnel FET data (2019) (2)
- Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness (2010) (2)
- What can low-frequency noise learn us about the quality of thin-gate dielectrics? (2003) (2)
- Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique (2009) (2)
- Electrical characterization of shallow cobalt-silicided junctions (2001) (2)
- Self-heating based model for polysilicon resistors (2003) (2)
- Random Telegraph Signal related low-frequency noise peaks in submicrometer Si MOST's (1993) (2)
- Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices (2005) (2)
- Chapter 4 – Radiation Effects and Low-Frequency Noise in Silicon Technologies (2001) (2)
- Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs (2012) (2)
- What do We Know About Hydrogen-Induced Thermal Donors? (2008) (2)
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs (2015) (2)
- Lifetime study in advanced isolation techniques (2001) (2)
- Study of recombination properties of neutron transmutation doped silicon wafers. (1997) (2)
- Semiconductor Film Bandgap Influence on Retention Time of UTBOX SOI 1T-FBRAM (2013) (2)
- Radiation damage in proton-irradiated strained Si n-MOSFETs (2006) (2)
- Carrier lifetime evaluation of electron irradiated SiGe/Si diode (2010) (2)
- The low-frequency noise in n-mosfets on strained silicon : Is there room for improvement? (2006) (2)
- Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs (2011) (2)
- Does Strain Engineering Impact the Gate Stack Quality and Reliability? (2007) (2)
- A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors (2009) (2)
- Is there a future for cryogenic SOI (1999) (2)
- Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002) (2)
- (Invited) Impact of the Metal Gate on the Oxide Stack Quality Assessed by Low-Frequency Noise (2017) (2)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation (1997) (2)
- Performance of Source Follower Buffers Implemented with Standard and Strained Triple-Gate nFinFETs (2010) (2)
- Irradiation temperature dependence of radiation damage in STI Si diodes (2003) (2)
- On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium (2007) (2)
- Analog Performance At Room and Low Temperature of Triple-Gate Devices: Bulk, DTMOS, BOI and SOI (2012) (2)
- Relaxation-Induced Excess Leakage Current in Recessed Si1-xGex Source/Drain Junctions (2007) (2)
- Comparison of analog performance between SOI and Bulk pFinFET (2014) (2)
- Noise analysis in advanced memory devices (2015) (2)
- Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration (2020) (2)
- Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation (2014) (2)
- LOW-FREQUENCY NOISE CHARACTERISATION OF SILICON-ON INSULATOR DEPLETION-MODE p-MOSFETS (1995) (2)
- Epitaxy‐free monocrystalline silicon thin films: Identifying the mechanisms behind lifetime degradation upon multiple high‐temperature annealings (2011) (2)
- Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors (2021) (2)
- Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors (2017) (2)
- In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs (2015) (2)
- The Potential and Restrictions of the Double Derivative Method for Threshold Voltage Extraction in SOI MOSFETs (1994) (2)
- Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices (2010) (2)
- One Transistor Floating Body RAM Performances on UTBOX Devices Using the BJT Effect (2012) (2)
- Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2017) (2)
- DIBL performance of 60 MeV proton-irradiated SOI MuGFETs (2010) (2)
- Lattice defects in high resistivity silicon (1996) (2)
- Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs (2007) (2)
- Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy (2019) (2)
- Low Frequency Noise Performance of State-of-the-Art and Emerging CMOS Devices (2012) (2)
- Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes (2004) (2)
- Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs (2014) (2)
- Operational Transconductance Amplifier Design with Gate-All-Around Nanosheet MOSFET using Experimental Lookup Table Approach (2021) (2)
- CHC degradation of strained devices based on SiON and high-k gate dielectric materials (2011) (2)
- Low frequency noise of cryogenic silicon electronics (1997) (2)
- Temperature-independent slow carrier emission from deep-level defects in p-type germanium (2013) (2)
- Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017) (2)
- Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K (1995) (2)
- Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack (2015) (2)
- Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction (2013) (2)
- Gate Stack Influence on GIFBE in nFinFETs (2009) (2)
- Effects of high temperature electron irradiation on trench-IGBT (2005) (2)
- Impact of Pre- and Post-Growth Treatment on the Low-Frequency Noise of InGaAs nMOSFETs (2014) (2)
- Low-frequency noise investigation of n-channel 3D devices (2015) (2)
- OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices (2019) (2)
- Displacement damage effects after high energy proton irradiation in cryogenic MOSFETs for space applications (2000) (2)
- Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton (2012) (2)
- The temperature mobility degradation influence on the ZTC of PD and FD SOI mosfets (2005) (2)
- Radiation hardness aspects of advanced FinFET and UTBOX devices (2012) (2)
- Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs (2013) (2)
- (Invited) Advanced Transistors for High Frequency Applications (2020) (2)
- Space Radiation Aspects of Silicon Bipolar Technologies (2002) (2)
- Integration of CMOS-electronics in an SOI layer on high-resistivity silicon substrates (1992) (2)
- Radiation source dependence of degradation and recovery of irradiated In/sub 0.53/Ga/sub 0.47/As PIN photodiodes (1997) (2)
- Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN Gate Stacks (2005) (2)
- Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions (2006) (2)
- Experimental comparison between relaxed and strained Ge pFinFETs (2017) (2)
- Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective (2007) (2)
- Impact of SEG on uniaxially strained MuGFET performance (2011) (2)
- Radiation-Induced Back Channel Leakage in 60 MeV-Proton-Irradiated 0 . 10 μ m-CMOS Partially Depleted SOI MOSFETs (2)
- Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions (2015) (2)
- Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013) (2)
- Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation (2005) (1)
- On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire MOSFETs with Bulk Source Contact (2022) (1)
- Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities (2020) (1)
- Advanced Semiconductor Materials and Devices—Outlook (2002) (1)
- Effect of surface electric field on Coulomb blockade energy and RTS capture kinetics in submicron nMOSFETs (1999) (1)
- Radiation effect on n-MOSFETs fabricated in a BiCMOS process (2002) (1)
- Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron (2001) (1)
- Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons (2006) (1)
- Total ionizing dose effects on ultra thin buried oxide floating body memories (2012) (1)
- Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior (2013) (1)
- Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices (2021) (1)
- Defect analysis of n-type silicon strained layers (2001) (1)
- Problems of low-frequency noise in depletion mode pMOSFETs under inversion conditions (1996) (1)
- Excess noise behaviour in short n-channel SOI MOSFET's (1997) (1)
- The impact of high-energy proton irradiation on the low-frequency 1/f noise in FZ-silicon diodes (2000) (1)
- Effect of substrate rotation on the analog performance of triple-gate FinFETs (2009) (1)
- GaAs Based Field Effect Transistors for Radiation-Hard Applications (2002) (1)
- Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C (2021) (1)
- Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature (2014) (1)
- NO oxides for low noise 0.18um analog CMOS (2001) (1)
- Spectroscopic study of oxygen related lattice defects in annealed silicon (1995) (1)
- Deep traps in In0.3Ga0.7As nFinFETs studied by Generation-Recombination noise (2017) (1)
- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates (2005) (1)
- Influence of the N-Type FinFET Width on the Zero Temperature Coefficient (2007) (1)
- Stress Relaxation Empirical Model for Biaxially Strained Triple-Gate Devices (2011) (1)
- Halo effects on 0.13 μm floating-body partially depleted SOI n-mosfets in low temperature operation (2003) (1)
- Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization (2021) (1)
- Radiation-induced deep levels in lead and tin doped N-type Czochralski silicon (2004) (1)
- Thermal and plasma treatments for improved (Sub-)1nm EOT RMG high-k last devices (2012) (1)
- Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric (2006) (1)
- A Comparison of Intrinsic Point Defect Properties in Si and Ge (2008) (1)
- Radiation damage of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation (2001) (1)
- On the Origin of the 1/f (2002) (1)
- Transition intensities and noise spectra in submicron MOSFETs (1997) (1)
- Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation (2007) (1)
- Lifetime Assessment of In x Ga1−x As n‐Type Hetero‐Epitaxial Layers (2022) (1)
- Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions (2010) (1)
- Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective? (2020) (1)
- Excess carrier dynamics in SiGe ultra-thin layers (2005) (1)
- Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack (2007) (1)
- Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs (2012) (1)
- Effects of high-temperature gamma ray and electron irradiation on npn Si transistors (2001) (1)
- Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks (2021) (1)
- The Low-Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions (2007) (1)
- Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus (2001) (1)
- Degradation of deep submicron partially depleted soi CMOS transistors under MeV proton or gamma irradiation (2003) (1)
- Advanced semiconductor devices for future CMOS technologies (2015) (1)
- (Invited, Digital Presentation) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling (2022) (1)
- Processing and Defect Control in Advanced Ge Technologies (2007) (1)
- A low-frequency noise study of state-of-the-art silicon n+p junction diodes (1995) (1)
- Electrical characterization of advanced gate dielectrics (2007) (1)
- Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point (2008) (1)
- Impact of Gate Dielectric Material on Basic Parameters of MO(I)SHEMT Devices (2020) (1)
- On quantum effects and low frequency noise spectroscopy in Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures (2017) (1)
- Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs (2018) (1)
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013) (1)
- Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996) (1)
- Impact of cryogenic temperature operation on static and low frequency noise behaviors of FD UTBOX nMOSFETs (2017) (1)
- Low-frequency noise behavior of graded-channel SOI n-MOSFETs (2007) (1)
- Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium (2008) (1)
- Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes (1997) (1)
- Study of silicon-silicon nitride interface properties on flat and textured surfaces by deep level transient spectroscopy (2010) (1)
- Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 °C (2021) (1)
- Invited; Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors (2014) (1)
- p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates (2001) (1)
- Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K (1998) (1)
- Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments (2020) (1)
- Low frequency noise performance of gate-first and replacement metal gate CMOS technologies (2013) (1)
- Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization (1997) (1)
- Low temperature operation of silicon-on-insulator inverters (1994) (1)
- Can we tell something about the barrier for capture from Random Telegraph Signal time constants without changing the temperature? (2016) (1)
- Reliability performance characterization of SOI FinFETs (2009) (1)
- Dopants for N and P junctions in germanium (2006) (1)
- Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors (2007) (1)
- Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions (2012) (1)
- DIBL Behavior of Triple Gate FinFETs with SEG on Biaxial Strained Devices (2010) (1)
- TFETs for Analog Applications (2018) (1)
- The influence of different stress techniques and proton radiation on GIDL in triple-gate SOI devices (2012) (1)
- Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping (2011) (1)
- GIDL behavior in UTBOX SOI devices with high-k/metal gate stacks (2012) (1)
- The impact of Fe and Cu on the minority carrier lifetime of P and N-type silicon wafers (1995) (1)
- Influence of temperature on the operation of strained triple-gate FinFETs (2008) (1)
- Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon (2016) (1)
- Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs (2009) (1)
- Rotated SOI MuGFETs at high temperatures (2011) (1)
- Dynamic threshold voltage influence on Ge pMOSFET hysteresis (2015) (1)
- Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions (2008) (1)
- Degradation and recovery of Si diodes by 20-MeV protons and 220-MeV carbon particles (1997) (1)
- Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies (2007) (1)
- Impact of residual high-energy boron implantation induced p-well defects on shallow junctions (2000) (1)
- Low-frequency noise in strained and relaxed Ge pMOSFETs (2010) (1)
- Extended defect related excess low-frequency noise in Si junction diodes (1996) (1)
- Randon telegraph signal phenomenology (2017) (1)
- The C Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs (2007) (1)
- Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices (2021) (1)
- Trade-off Analysis between gm/ID and fT of nanosheet NMOS Transistors with Different Metal Gate Stack at High Temperature (2022) (1)
- The impact of the Ge concentration in the source for vertical tunnel-FETs (2015) (1)
- Radiation tolerance of Si1 − yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations (2014) (1)
- Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers (2010) (1)
- Channel backscattering coefficient impact on FinFET devices with uniaxial/biaxial strain engineering (2010) (1)
- Noise characterization of gated silicon p-n diodes (1997) (1)
- EPR studies of neutron-irradiated n-type FZ silicon doped with tin (2002) (1)
- Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures (2010) (1)
- A deep‐level transient spectroscopy study of p‐type silicon Schottky barriers containing a Si–O superlattice (2017) (1)
- Low frequency noise in partially depleted SOI twin-MOSFET's (1993) (1)
- Low frequency noise and fin width study of silicon passivated germanium pFinFETs (2016) (1)
- Point and Extended Defects (2014) (1)
- Challenges for advanced end of the roadmap, beyond Si and beyond CMOS technologies (2017) (1)
- Analog parameters of MuGFET devices with different source/drain engineering (2012) (1)
- Impact of Advanced Gate Stack Engineering On Low Frequency Noise Performances of Planar Bulk CMOS transistors (2009) (1)
- Low-frequency and random telegraph noise performance of Ge-based and III–V devices on a Si platform (2016) (1)
- Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors (2021) (1)
- Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications (2022) (1)
- Catalytic Forming Gas Anneal on III-V/Ge MOS Systems (2009) (1)
- Impact of scaling on the low-frequency noise performance of advanced CMOS devices (2006) (1)
- Study of ΔID/ID of a single charge trap in utbox silicon films (2014) (1)
- Guidelines for cryogenic spaceborn CMOS testing and optimization (2000) (1)
- Intrinsic point defect properties and engineering in silicon and germanium Czochralski crystal growth (2008) (1)
- Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics (2004) (1)
- Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si (2003) (1)
- Detector diodes and test devices fabricated in high resistivity SOI wafers (1992) (1)
- Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs (2008) (1)
- Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs (2021) (1)
- Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K (1996) (1)
- Study of the main digital and analog parameters of underlappedMuGFETs (2012) (1)
- Radiation damage in deep submicron partially depleted SOI CMOS (2003) (1)
- Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs (2015) (1)
- Simple Analytical Model to Study the ZTC Bias Point in FinFETs (2007) (1)
- Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO2 Films (2002) (1)
- Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric (2021) (1)
- Are Extended Defects a Show Stopper for Future III-V CMOS Technologies (2019) (1)
- Local Electric Fields in Silicided Shallow Junctions (2004) (1)
- Random telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs (1999) (1)
- (Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies (2020) (1)
- DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures (1994) (1)
- Displacement Damage in Group IV Semiconductor Materials (2002) (1)
- Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots (2017) (1)
- The Use of Body Ties in Cryogenic SOI CMOS (1994) (1)
- Buried Layer Processing for Advanced Bipolar Technology (1989) (1)
- Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs (2008) (1)
- High-k Dielectrics and Interface Passivation for Ge and III/V Devices on Silicon for Advanced CMOS (2009) (1)
- Models for Burst and RTS Noise Mechanism in Electronic Devices (1995) (1)
- Detailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain (2015) (1)
- Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-k Dielectric/Metal Gate 45 nm Bulk CMOS Technology (2013) (1)
- Contact technology schemes for advanced Ge and III-V CMOS technologies (2012) (1)
- Floating body retention analysis for 1T-DRAM (2013) (1)
- Radiation damage of InGaAs photodiodes by high-temperature electron and neutron irradiation (2003) (1)
- Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs (2020) (1)
- On the radiation damage effects in semiconductors beyond the end of range of implanted protons at high energies and fluences (2005) (1)
- GRT model for random telegraph signals in MOSFETS (1999) (1)
- Gate-length dependence of the low-frequency noise overshoot in partially depleted SOI n-MOSFET's (1993) (1)
- Influence of Proton Irradiation in Bulk and DTMOS Triple Gate FinFETs (2011) (1)
- Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained Silicon SOI MuGFETs (2013) (1)
- Erratum: ‘‘Substrate bias effect on the capture kinetics of random telegraph signals in submicron p‐channel silicon metal–oxide–semiconductor transistors’’ [Appl. Phys. Lett. 66, 598 (1995)] (1995) (1)
- The impact of the Ge content on the characteristics of strained Si(1-x)Ge(x) epitaxial diodes before and after degradation by high energy particles (1998) (1)
- Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy (2011) (1)
- Enhanced model for ZTC in irradiated and strained pFinFET (2017) (1)
- High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs (2012) (1)
- Analysis of the Total Resistance in Standard and Strained FinFET Devices With and Without the Use of SEG (2009) (1)
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013) (1)
- Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures (2018) (1)
- Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI (2015) (1)
- Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates (2013) (1)
- Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs (2009) (1)
- Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers (2020) (1)
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- Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy (2020) (1)
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- Impact of p-Well Implantation Parameters on Junction Leakage (2002) (0)
- Channel length influence on the low-frequency noise of strained 45o rotated triple gate SOI nFinFETs (2014) (0)
- Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2004) (0)
- Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B2H6 and SiH4 Precursors (2019) (0)
- Low temperature noise spectroscopy of p-channel SOI FinFETs (2014) (0)
- Analog performance of SOI MOSFETs with different TiN gate electrode thickness and hHigh-k dielectrics (2011) (0)
- Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations (2013) (0)
- Effective hole mobility and low-frequency noise characterization of strained Ge pFinFETs (2016) (0)
- Low frequency noise spectroscopy in advanced nFinFETs (2011) (0)
- Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs (2005) (0)
- Strong low‐frequency noise in buried‐channel pMOSFETs under inversion conditions (1996) (0)
- Proton radiation hardness of MOS transistors at cryogenic temperature (1999) (0)
- Chapter 2 Recent Trends in Bias Temperature Instability (2015) (0)
- Impact of the Channel Doping on the Low-Frequency Noise of Silicon Vertical Nanowire pFETs (2022) (0)
- Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques (1996) (0)
- Effect of extension architecture on the LF noise of UTBOX SOI MOSFETs (2015) (0)
- Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy (2002) (0)
- Electrical defects in heteroepitaxial nanometer CMOS technology (2010) (0)
- Current transients in reverse-biased p-GeSn/n-Ge diodes (2015) (0)
- Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies (2009) (0)
- Empirical 1/f noise model for polysilicon emitter bipolar junction transistors (1996) (0)
- Radiation Influence on Biaxial+uniaxial Strained Silicon MuGFETs (2013) (0)
- The impact of the temperature on In0.53Ga0.47As nTFETs (2018) (0)
- Low-frequency noise of nFinFETs on 45º rotated substrates (2012) (0)
- (Electronics and Photonics Division Award) The Impact of Defects on the Performance of Semiconductor Devices and Materials (2022) (0)
- Tunnel-FET Evolution and Applications for Analog Circuits (2022) (0)
- Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGex Source/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content (2013) (0)
- Analysis of the diffusion currrent in cobalt silicided n+p junctions (1998) (0)
- In0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization (2013) (0)
- High energy proton irradiation effects on the electrical performance of silicon (1996) (0)
- Liquid helium temperature irradiation effects on the operation of 0.7 μm CMOS devices for cryogenic space applications (2003) (0)
- Schottky to ohmic transition in Pd/Ge contacts on n-GaAs (2008) (0)
- Degradation and recovery of 1.3µm InGaAsP laser diodes irradiated by 1-MeV fast neutrons (1999) (0)
- Noise as a spectroscopic tool for semiconductor characterisation (1997) (0)
- AlGaN/GaN MISHEMT analysis from an analog point of view up to 150°C (2020) (0)
- Trap density in Ge-on-Si pMOSFETs with Si intermediate layers (2011) (0)
- A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1−x-based Layers for Ovonic Threshold Switching Selectors (2020) (0)
- Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs (2014) (0)
- Optimised diode assessment of the surface and bulk generation/recombination properties of silicon substrates (1998) (0)
- Noise characteristics of nanoscaled SOI MOSFETs (2013) (0)
- Effect of high-temperature electron irradiation in deep submicron MOSFETs (2003) (0)
- Defect Engineering in Submicron CMOS Technologies (1991) (0)
- Low-frequency noise diagnostics of CMOS technologies (1995) (0)
- Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation (2012) (0)
- Gateless 1T-DRAM on n-Channel Bulk FinFETs (2012) (0)
- Electron irradiation effect on thermal donors in CZ-Si (2004) (0)
- Impact of InxGa1−x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs (2016) (0)
- Source of Metals in Si and Ge Crystal Growth and Processing (2018) (0)
- nduced Transient Currents in Bu icon-On-Insulator FinFETs (2011) (0)
- n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents (2016) (0)
- Interfaces, Traps, and Reliability (2015) (0)
- High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap (2009) (0)
- Performance degradation mechanism of irradiated GaAlAs LED (2007) (0)
- Epitaxial growth in advanced MOS devices: challenges and solutions (2012) (0)
- A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs (1996) (0)
- A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high-voltage applications (2002) (0)
- Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium (2007) (0)
- Radiation damage in shallow trench isolation diodes (2001) (0)
- Chapter 5 – Metals in Germanium (2007) (0)
- Low frequency noise assessment of hot carrier stress effects in 0.7?m MOSFETs (1995) (0)
- Transition probabilities and noise spectra in submicron MOSFETs (1996) (0)
- Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well (2000) (0)
- Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs (2012) (0)
- Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy (2016) (0)
- Studying the Reliability of Ge nFinFETs by the Normalized Input-referred Voltage Noise (2020) (0)
- Extraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence (2000) (0)
- Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams (1992) (0)
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI nMOSFET (1999) (0)
- Impact of traps on the electrical characteristics of GeSn/Ge diodes (2014) (0)
- Impact of the generation width on the lifetime extraction in Cz silicon p-n junctions (1999) (0)
- A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures (2003) (0)
- SEG and uniaxial strain influence on FinFET performance at low temperature (2010) (0)
- Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes (1997) (0)
- Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors (2015) (0)
- High Temperature Electron Irradiation Effects in InGaAs Photodiodes (2003) (0)
- Impact of STI width and spacing on the stress generation in deep submicron CMOS (2004) (0)
- Temperature dependence of LF noise in UTBB nMOSFETs (2013) (0)
- Low-frequency 1/f noise behaviour of deep submicron n-MOSFETS (1999) (0)
- Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics (2013) (0)
- Effect of variability in p-channel bulk MuGFETs on the gamma radiation behavior (2009) (0)
- (Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features (2020) (0)
- Generation rate analysis of different S/D junction engineering in scalted UTBOX 1-T DRAM (2013) (0)
- Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications (2022) (0)
- Fin Pitch Impact on Biaxial/Uniaxial Strain Engineering of Triple-Gate Devices (2011) (0)
- Critical examination of the relationship between random telegraph signals and low‐frequency noise in small‐area Si MOST’s (2008) (0)
- Low-frequency noise of CMOS compatible junction diodes (1995) (0)
- BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application (2011) (0)
- Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies (2011) (0)
- Ground Plane Impact on Performance of Relaxed Ge FinFETs (2019) (0)
- Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs (2004) (0)
- Effect of Heavy Ion irradiation and Electrical Stress on Ultra-Thin Gate Oxide SOI MOSFETs (2006) (0)
- Physical Mechanisms of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs (2012) (0)
- Impact of Metals on Silicon Devices and Circuits (2018) (0)
- The Transverse Field Dependence of the Capture Kinetics of Random Telegraph Signals in Small Area Si MOSFETs (1995) (0)
- Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes (2015) (0)
- Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits (2011) (0)
- Scaling of nanoelectronics beyond the Si roadmap (2009) (0)
- Stress Characterization of Selective Epitaxial Si1-xGex Deposition for Embedded Source/Drain Before and After Millisecond Laser Anneal (2009) (0)
- Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs (2010) (0)
- Electrical performance comparison of embedded Si1-xGex source/drain junctions processed in 200 mm and 300 mmEpi-reactors (2008) (0)
- The Low-Frequency Noise Behavior of Advanced Logic and Memory Devices (2022) (0)
- GaN Materials and Devices (2018) (0)
- Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers (2016) (0)
- Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs (2007) (0)
- Radiation effects in silicon components for space applications (1995) (0)
- Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment? (2018) (0)
- Characterization and Detection of Metals in Silicon and Germanium (2018) (0)
- Electrically Active Defects in Plated Crystalline Silicon n+p Solar Cells: A DLTS Perspective (2018) (0)
- Impact of the Channel Doping on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire pMOSFETs (2022) (0)
- Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation (2015) (0)
- Ge and III/V devices on Si for advanced CMOS (2009) (0)
- Radiation damage of Si(1-y)C(y) Source/Drain n-MOSFETs with different carbon concentrations (2013) (0)
- GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices (2011) (0)
- 1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm (2019) (0)
- Progressive degradation of TiN∕SiON and TiN∕HfO2 gate stack triple gate SOI nFinFETs subjected to electrical stress (2009) (0)
- 1/f noise and DLTS of LEDs (1996) (0)
- Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles (1997) (0)
- Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients (2008) (0)
- Processing Impact on the Low-Frequency Noise of 1.8 V Input-Output Bulk FinFETs (2019) (0)
- Study of Hysteresis in Vertical Ge-Source Heterojunction Tunnel-FETs at Low Temperature (2015) (0)
- Mrad(Si) Irradiation Effects in Gate-all-Around Silicon-on-Insulator n-MOSFET's (1994) (0)
- Analysis of standard and strained FinFET operation in source-follower buffer configuration (2009) (0)
- Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films (2001) (0)
- High-energy particle irradiation effects in 0.5 /spl mu/m BiCMOS polysilicon emitter bipolar junction transistors (1997) (0)
- Hydrogen and Helium implantation in Silicon and Germanium (2008) (0)
- Germanium for post Si CMOS ... Implantation , doping and defects (2008) (0)
- Physics of fluctuation processes in downscaled silicon MOSFETs (2009) (0)
- Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures (2017) (0)
- Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry (2013) (0)
- Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications (2020) (0)
- Study and design of radiation tolerant electronic semiconductor devices for communication under high radiation levels (2008) (0)
- Tunnel emission from Co and Cr-related levels in p-type Ge (2013) (0)
- Discussion of the flicker noise origin at very low temperature and polarisation operation (2019) (0)
- Mn Related Defect Levels in Germanium (2014) (0)
- A temperature independent emission component in the capacitance transients of deep-level defects in germanium (2012) (0)
- Uniaxial and/or Biaxial Strain Influence on MuGFET Devices (2012) (0)
- DLTS and FTIR study of quenching induced defects in germanium (2011) (0)
- Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit (2006) (0)
- Radiation damages of InGaP p-HEMTs by high energy particles (1998) (0)
- Noise characteristics and hot carrier stress of 0.7 ?m MOSFETs (1996) (0)
- Effect of irradiation in InGaAs devices (1997) (0)
- Impact of InxGa1-x and Zn diffusion temperature on intrinsic voltage gain in III-V TFETs (2016) (0)
- Comparison between 0.13 µm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002) (0)
- RTS in memory and imager circuits (2017) (0)
- Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs (2023) (0)
- Impact of the Zn diffusion process at the source side of InxGa1−xAs nTFETs on the analog parameters down to 10 K (2017) (0)
- Advanced CMOS Integration Technologies for Future Mobile Applications (2019) (0)
- DC and noise performances of SOI FinFETs at very low temperature (2012) (0)
- Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS (2005) (0)
- High Mobility Channel (2016) (0)
- Resistance and 1/f noise dependence on magnetic field in single Ni Fe layers and Ni Fe/Cu multilayers (1997) (0)
- Low-Frequency Noise Sources in Silicon-on-Insulator Depletion-Mode p-MOSFETs (1994) (0)
- Preface to the Focus Issue on Defect Characterization in Semiconductor Materials and Devices (2016) (0)
- Origin and Suppression of Junction Leakage in Germanium-On-Silicon Structures (2007) (0)
- 2-MeV alpha ray effects in AlGaAsP p-HEMTs (2000) (0)
- Study on radiation damages of SiGe devices by irradiation (2008) (0)
- High frequency RTS noise in submicron MOSFETs (1996) (0)
- Noise analysis inadvanced memory devices (2015) (0)
- FOR CRYOGENIC SPACEBORN CMOS TESTING AND OPTIMIZATION (2000) (0)
- SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors (2010) (0)
- (Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method (2014) (0)
- Impact of generation centers on the retention time in 1T-FBRAM (2012) (0)
- Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature (2003) (0)
- Effect of biaxial mechanical strain in the analog operation of fully depleted SOI transistors as a function of temperature (2011) (0)
- LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric (2011) (0)
- Influence of boron implantation dose on the mechanical stress in polycrystalline silicon films (2000) (0)
- The assessment of border traps in high-mobility channel materials (2015) (0)
- Defect Creation and Passivation by Hydrogen Plasma in Silicon and Germanium (2010) (0)
- (Invited) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling (2022) (0)
- Recent developments in understanding and modeling of defects in Czochralski germanium (2010) (0)
- Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs (2013) (0)
- Multi-gate devices for the 32-nm node and beyond: advantages and issues (2008) (0)
- Low frequency noise and fin width study of Si passivated Ge pFinFETs (2016) (0)
- (Invited) Electrical Activity of Extended Defects in III-V Semiconductors (2019) (0)
- Elastic Relaxation Evaluation in SiGe/Si Hetero-Epitaxial Structures (2011) (0)
- High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation (2000) (0)
- Profiling of border traps at GeSn and high-K oxide interface (2014) (0)
- Structural Variation and Its Influence on the 1/f Noise of a-Si1−xRux Thin Films Embedded with Nanocrystals (2019) (0)
- Thermal oxygen donors with an anomalous small electron capture cross section (1998) (0)
- Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices (1995) (0)
- Analog operation of uniaxially and biaxially strained FD SOI nMOSFETs at cryogenic temperatures (2008) (0)
- Impac to fth esubstrat eo nth elow-frequenc ynois eo fsilicon n 1 pjunctio ndiodes (2001) (0)
- The Operation of Partially Depleted SOI Inverters from Room Down to Liquid Helium Temperature (1994) (0)
- RTS noise in submicron MOSFETs (1996) (0)
- Invited: The Impact of a (Si)Ge Heterojunction on the Analog Performance of Vertical Tunnel FETs (2014) (0)
- A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon (2003) (0)
- Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior (2010) (0)
- Challenges in ultra-shallow junction technology (2018) (0)
- Electrical Activity of Iron and Copper in Si, SiGe and Ge (2018) (0)
- The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As (2019) (0)
- Recent and forthcoming publications in pss: Phys. Status Solidi RRL 8/2016 (2016) (0)
- Generation-recombination noise in advanced CMOS devices (2016) (0)
- A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies (2021) (0)
- The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs (2014) (0)
- Subthreshold Currents in High Resistivity Silicon p-MOSFETs Operating at Cryogenic Temeperatures (1994) (0)
- Two-sided read window observed on UTBOX SOI 1T-DRAM (2013) (0)
- Comparison of cryogenic performance of metal-gate MOSFETs with SiON and HfSiON gate dielectrics (2006) (0)
- Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain (2016) (0)
- Threshold voltage modeling for DT UTBB SOI in different operation modes (2015) (0)
- Noise figure of BJT common-emitter amplifier at low frequencies (1997) (0)
- Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body (2002) (0)
- Tin-related deep levels in proton-irradiated n-type silicon. (2000) (0)
- Reverse current transient behavior of pGeSn/nGe diodes (2015) (0)
- Epitaxy for Strain Engineering (2014) (0)
- Low temperature performance of proton irradiated strained SOI FinFET (2017) (0)
- The "U" Shape Behavior of GIFBE in Function of Back Gate Bias in FinFETs (2009) (0)
- Deep-level transient spectroscopy study of quenched-in defects in germanium (2014) (0)
- Operational and reliability aspects of RTS (2017) (0)
- The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon (2002) (0)
- Biasdependence ofgate oxide degradation of90 nmCMOStransistors under 60MeVproton irradiation (2005) (0)
- Radiation Hardness Studies of Silicon Technologies for Space Applications (1994) (0)
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What Schools Are Affiliated With Eddy Roger Simoen?
Eddy Roger Simoen is affiliated with the following schools: