Edward Chang
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Taiwanese electrical engineer
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Edward Chang engineering Degrees
Engineering
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Electrical Engineering
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Applied Physics
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Engineering
Edward Chang 's Degrees
- Bachelors Electrical Engineering National Taiwan University
- Masters Electrical Engineering Stanford University
- PhD Electrical Engineering Stanford University
Why Is Edward Chang Influential?
(Suggest an Edit or Addition)According to Wikipedia, Edward Chang is a Taiwanese electrical engineer from National Chiao Tung University in Hsinchu, Taiwan. Chang was named a Fellow of the Institute of Electrical and Electronics Engineers in 2017 for his contributions to compound semiconductor heterojunction transistor technologies.
Edward Chang 's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor (2010) (107)
- Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer (2014) (94)
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications (2013) (90)
- The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE (2010) (57)
- Passivation of GaAs FET's with PECVD silicon nitride films of different stress states (1988) (56)
- GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications (2014) (53)
- Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs (2007) (48)
- Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application (2009) (47)
- Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain (2009) (43)
- Thermal stability of Cu/Ta/GaAs multilayers (2000) (41)
- Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications (2007) (39)
- Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage (2010) (37)
- Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer (2014) (37)
- 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications (1996) (36)
- Growth of High-Quality Ge Epitaxial Layers on Si (100) (2003) (35)
- Low-noise metamorphic HEMTs with reflowed 0.1-/spl mu/m T-gate (2004) (34)
- Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier (2001) (34)
- Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer (2014) (32)
- High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate (2011) (31)
- Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell (2012) (31)
- Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells (2010) (29)
- Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments (2011) (27)
- Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method (2007) (26)
- Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density (2015) (26)
- Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition (2011) (26)
- Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs (2010) (26)
- Effect of Gate Sinking on the Device Performance of the InGaP/AlGaAs/InGaAs Enhancement-Mode PHEMT (2007) (26)
- Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application (2009) (25)
- RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface (2017) (25)
- Growth of very-high-mobility AlGaSb /InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications (2007) (24)
- Photoluminescence and Raman studies of GaN films grown by MOCVD (2009) (24)
- Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations (2003) (24)
- Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices (2012) (23)
- High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/GexSi1-x/Si substrate (2007) (23)
- High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique (2020) (23)
- Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures (2016) (21)
- A $\delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement (2007) (21)
- Band Alignment Parameters of Al2O3/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures (2013) (21)
- High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications (2017) (21)
- DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx (2007) (20)
- Reactive ion etching of GaN with BCl3/SF6 plasmas (1996) (20)
- SPDT GaAs Switches With Copper Metallized Interconnects (2007) (20)
- Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering (2021) (19)
- A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer (2015) (19)
- 2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT (2005) (19)
- Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application (2009) (19)
- 460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing (2009) (19)
- Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors (2012) (19)
- Backside copper metallisation of GaAs MESFETs (2000) (19)
- Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support (2015) (18)
- Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors (2016) (18)
- Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation (2018) (18)
- Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN (2003) (17)
- 60 GHz Broadband MS-to-CPW Hot-Via Flip Chip Interconnects (2007) (17)
- Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents (2010) (17)
- Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications (2019) (17)
- Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application (2013) (17)
- 30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs (2010) (17)
- A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy (2002) (17)
- Study of nickel silicide contact on Si/Si1-xGex (2003) (17)
- The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy (2009) (16)
- Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy (2011) (16)
- Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT (2003) (16)
- Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications (2017) (16)
- Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate (2014) (16)
- Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate (2016) (16)
- Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures (2013) (16)
- Growth and fabrication of AlGaN/GaN HEMT on SiC substrate (2012) (15)
- High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications (2018) (15)
- Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications (2010) (15)
- Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy (2011) (15)
- Use of WN/sub X/ as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs (2004) (15)
- Accelarated Publication: Evaluation of Cu-bumps with lead-free solders for flip-chip package applications (2009) (15)
- Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate (2013) (15)
- MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission (2004) (14)
- Submicron T-shaped gate HEMT fabrication using deep-UV lithography (1994) (14)
- A GaAs/AlAs Wet Selective Etch Process for the Gate Recess of GaAs Power Metal-Semiconductor Field-Effect Transistors (2001) (14)
- Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration (2021) (14)
- Electrical signal amplification of DNA hybridization by nanoparticles in a nanoscale gap (2007) (14)
- Reliability improvement in GaN HEMT power device using a field plate approach (2017) (14)
- Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (2016) (14)
- State-of-the-Art on Functional Titanium Dioxide-Integrated Nano-Hybrids in Electrical Biosensors (2020) (13)
- Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects (2009) (13)
- Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs (2008) (13)
- Device linearity comparison of uniformly doped and /spl delta/-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.6/Ga/sub 0.4/As metamorphic HEMTs (2006) (13)
- Electronic transport characteristics in a one-dimensional constriction defined by a triple-gate structure (2006) (13)
- Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures (2006) (13)
- High-efficiency and low-distortion directly-ion-implanted GaAs power MESFETs for digital personal handy-phone applications (1997) (13)
- Formation of a Multi-Arm Branched Nanorod of ZnO on the Si Surface via a Nanoseed-Induced Polytypic Crystal Growth Using the Hydrothermal Method (2013) (13)
- Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor (2005) (13)
- Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs (2017) (12)
- Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications (2018) (12)
- Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack (2015) (12)
- A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate (2005) (12)
- 2-V-operation /spl delta/-doped power HEMT's for personal handy-phone systems (1997) (12)
- InGaP/InGaAs PHEMT with high IP3 for low noise applications (2004) (12)
- Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs (2018) (12)
- The Evolution of Manufacturing Technology for GaN Electronic Devices (2021) (12)
- RF and Logic Performance Improvement of Composite-Channel HEMT Using Gate-Sinking Technology (2008) (12)
- Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure (2019) (12)
- Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy (2019) (12)
- Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE (2014) (12)
- InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application (2008) (11)
- Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance (2014) (11)
- New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique (2002) (11)
- First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack (2018) (11)
- Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates (2004) (11)
- Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition (2010) (11)
- Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation (2015) (11)
- Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition (2012) (11)
- AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (2016) (11)
- Device Linearity Comparison of Uniformly Doped (2006) (11)
- RF and Logic Performance Improvement of $ \hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology (2008) (11)
- Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate (2007) (11)
- A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs (2018) (11)
- Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz (2012) (11)
- High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application (2011) (10)
- Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors (2013) (10)
- In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment (2018) (10)
- Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application (2017) (10)
- Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications (2020) (10)
- STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION (1993) (10)
- Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures (2008) (9)
- Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications (2020) (9)
- 3-mm double-heterojunction microwave power HEMT fabricated by selective RIE (1988) (9)
- Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes (2010) (9)
- Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates (2012) (9)
- Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate (2012) (9)
- A Cu-based alloyed Ohmic contact system on n-type GaAs (2007) (9)
- Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD (2018) (9)
- The thermal stability of ohmic contact to n-type InGaAs layer (1995) (9)
- Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric (2016) (9)
- Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density (2013) (9)
- Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application (2006) (9)
- Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors (2014) (9)
- Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors (2016) (9)
- AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants (2018) (9)
- GaAs device passivation using sputtered silicon nitride (1988) (9)
- Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement (2020) (9)
- Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications (2015) (9)
- Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD (2017) (9)
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV Tri-Layer Resist System and Electron-Beam Lithography (1996) (9)
- Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination (2020) (9)
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications (2004) (9)
- Reactive Ion Etching of GaInP , GaAs , and AlGaAs (1995) (8)
- Projected Efficiency of Polarization-Matched p-In $_{\bm x}$ Ga $_{\bm {1-x}}$ N/i-In $_{\bm y}$ Ga $_{\bm{1-y}}$ N/n-GaN Double Heterojunction Solar Cells (2013) (8)
- Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance (2019) (8)
- High-Performance LPCVD-SiNx / InAlGaN / GaN MIS-HEMTs with 850-V 0 . 98-mΩ ∙ cm 2 for Power Device Applications (2018) (8)
- Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures (2008) (8)
- Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD (2014) (8)
- Thermal stability of Ti∕Pt∕Cu Schottky contact on InAlAs layer (2006) (8)
- Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors (2015) (8)
- Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications (2010) (8)
- Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes (2004) (8)
- InAs channel-based quantum well transistors for high-speed and low-voltage digital applications (2008) (8)
- Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT (2018) (8)
- Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors (2014) (8)
- Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer (2014) (8)
- Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells (2014) (8)
- Optimization of gate insulator material for GaN MIS-HEMT (2016) (8)
- A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects (2019) (7)
- Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors (2014) (7)
- A selective dry-etch technique for GaAs MESFET gate recessing (1988) (7)
- Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to $V$ -Band Frequencies With Excellent Reliability (2010) (7)
- Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates (2012) (7)
- MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer (2008) (7)
- Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation (2009) (7)
- InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D (2018) (7)
- Growth of ultrathin GaSb layer on GaAs using metal–organic chemical vapor deposition with Sb interfacial treatment (2016) (7)
- Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality (2021) (7)
- Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal–insulator–semiconductor high-electron mobility transistor for power applications (2015) (7)
- Novel Cu/Cr/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs (2008) (7)
- Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates (2014) (7)
- Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition (2011) (7)
- Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films (2022) (7)
- High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98- $\text{m}{\Omega} \cdot$ cm2 for Power Device Applications (2018) (7)
- High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems (2002) (7)
- Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$SiO2 current blocking layer (2016) (7)
- Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application (2013) (7)
- Low resistive InGaN film grown by metalorganic chemical vapor deposition (2020) (7)
- Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs∕Ge∕SixGe1−x∕Si substrate (2006) (7)
- Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio (2019) (7)
- Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications (2010) (7)
- 60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging (2007) (7)
- Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect (2014) (7)
- High Vth enhancement mode GaN power devices with high ID, max using hybrid ferroelectric charge trap gate stack (2017) (7)
- Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs (2016) (7)
- In 0.5 Ga 0.5 As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition (2013) (6)
- Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD (2019) (6)
- A planar gate double beryllium implanted GaAs power MESFET for low voltage digital wireless communication application (2000) (6)
- Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation (2015) (6)
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz (2012) (6)
- Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD (2018) (6)
- Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure (2014) (6)
- Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication (2017) (6)
- Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter (2021) (6)
- Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology (2010) (6)
- A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier (2005) (5)
- Copper-Airbridged Low-Noise GaAs PHEMT With$hboxTi/hboxWN_x/hboxTi$Diffusion Barrier for High-Frequency Applications (2006) (5)
- GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications (2015) (5)
- Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers (2019) (5)
- Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs (2021) (5)
- Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer (2017) (5)
- Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band (2012) (5)
- Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition (2017) (5)
- Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications (2018) (5)
- Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations (2013) (5)
- Hybrid dry-wet chemical etching process for via holes for gallium arsenide MMIC manufacturing (1988) (5)
- New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors (2006) (5)
- Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure (2017) (5)
- Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures (2013) (5)
- AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers (2008) (5)
- Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications (2016) (5)
- Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application (2017) (5)
- Effect of multiple AlN layers on quality of GaN films grown on Si substrates (2014) (5)
- GaN HEMT on Si for high power applications (2011) (5)
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges (2007) (5)
- Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics (2015) (5)
- Hybridization sensing by electrical enhancement with nanoparticles in nanogap (2008) (5)
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications (1997) (5)
- Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor (2016) (5)
- Control of metamorphic buffer structure and device performance of InxGa1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition (2014) (5)
- Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications (2014) (5)
- Design and fabrication of 0.25- mu m MESFETs with parallel and pi -gate structures (1989) (4)
- Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs (2010) (4)
- Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application (2014) (4)
- Improved reliability of GaN HEMTs using N2 plasma surface treatment (2015) (4)
- Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application (2002) (4)
- Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate (2018) (4)
- Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT (2013) (4)
- Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment (2016) (4)
- Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx (2015) (4)
- Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition (2014) (4)
- Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition (2017) (4)
- InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment (2017) (4)
- A Strategic Review of Recent Progress in Metamorphic Quantum Well Based Heterostructure Electronic Devices (2008) (4)
- Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer (2021) (4)
- Study of tri-gate AlGaN/GaN MOS-HEMTs for power application (2020) (4)
- High-frequency performances of superjunction laterally diffused metal–oxide–semiconductor transistors for RF power applications (2016) (4)
- C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric (2012) (4)
- Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal–oxide–semiconductor applications (2017) (4)
- The reliability study of III–V solar cell with copper based contacts (2015) (4)
- Growth of GaN films on circle array patterned Si (111) substrates (2014) (4)
- Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications (2019) (4)
- Flower-Like Distributed Self-Organized Ge Dots on Patterned Si (001) Substrates (2003) (4)
- The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency (2014) (4)
- Study of La2O3/HfO2Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor (2011) (4)
- Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching (2013) (3)
- The performance of GaAs power MESFET’s using backside copper metallization (2002) (3)
- RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications (2010) (3)
- A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications (2016) (3)
- A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization (2021) (3)
- Power PHEMT with compact device layout for low voltage CDMA application (2000) (3)
- High-Efficiency AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using a Sub-Micron Deep-UV T-Shaped Gate Technology (2000) (3)
- AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure (2021) (3)
- TiWN Schottky Contacts to n-Ga0.51In0.49P (1994) (3)
- 2-V-Operation-Doped Power HEMT ’ s for Personal HandyPhone Systems (1998) (3)
- High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices (2016) (3)
- Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET (2017) (3)
- A pseudomorphic GaInP/InP MESFET with improved device performance (1993) (3)
- Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications (2010) (3)
- GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation (2022) (3)
- Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate (2011) (3)
- InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate (2012) (3)
- Improvement on the noise performance of InAs-based HEMTs with gate sinking technology (2010) (3)
- Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors (2015) (3)
- Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition (2020) (3)
- 2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments (2015) (3)
- Use of spin-on-hard mask materials for nano scale patterning technology (2008) (3)
- Highly Selective GaAs/Al0.2Ga0.8As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor (2000) (3)
- E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering (2021) (3)
- Fabrication and configuration development of silicon nitride sub-wavelength structures for solar cell application. (2010) (3)
- A hybrid wafer-dicing process for GaAs MMIC production (1991) (3)
- Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application (2017) (3)
- Evaluation of RF and Logic Performance for 80 nm InAs/InGaAs Composite Channel HEMTs Using Gate Sinking Technology (2007) (3)
- Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate (2014) (3)
- A Novel Digital Etch Technique for p-GaN Gate HEMT (2018) (3)
- Bias Temperature Instability of GaN Cascode Power Switch (2020) (3)
- Corrections to "Device Linearity Comparison of Uniformly Doped and δ-Doped In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs" (2006) (3)
- Bias- and temperature-assisted trapping/de-trapping of ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate (2017) (2)
- Characterizations of Al2O3/ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition (2013) (2)
- Gold-free Cu-metallized III-V solar cell (2014) (2)
- Effect of the circle-grid electrodes on concentrated GaAs solar cell efficiency (2014) (2)
- Controlled Placement of Self-Organized Ge Dots on Patterned Si (001) Surfaces (2004) (2)
- Self-cleaning Effects on Atomic Layer Deposition (ALD) of Al 2 O 3 on InGaAs with Several Surface Treatments (2009) (2)
- Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition (2021) (2)
- Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition (2018) (2)
- Passivation of GaAs Mesfet's with PECVD Silicon Nitride Films of Different Stress States (1988) (2)
- A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications (2011) (2)
- InAs HEMT for terahertz applications (2012) (2)
- Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes (2022) (2)
- A Cu Metalized Power InGaP/GaAs Heterojuction Bipolar Transistor with Pd/Ge/Cu Alloyed Ohmic Contact (2009) (2)
- Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application (2006) (2)
- Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer (2020) (2)
- RF power FinFET transistors with a wide drain-extended fin (2017) (2)
- Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment (2016) (2)
- Study of the thermal stability of the Schottky contacts of GaInP grown by LP-MOCVD (1992) (2)
- Coaxial transitions for CPW-to-CPW flip chip interconnects (2007) (2)
- The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition (2019) (2)
- Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching (2021) (2)
- Fabrication of 0.15-$\mu\hbox{m}$ $\Gamma$-Shaped Gate $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}/\hbox{In}_{0.6}\hbox{Ga}_{0.4}\hbox{As}$ Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique (2007) (2)
- Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer (2021) (2)
- Growth of ZnSe Epilayer on Si Using Ge/GexSi1-x Buffer Structure (2004) (2)
- Optimal design of the multiple-apertures-GaN-based vertical HEMTs with current blocking layer (2015) (2)
- Room temperature self-organized gold nanoparticles materials for embedded electronic devices (2012) (2)
- Nonlinear dependence of X-ray diffraction peak broadening in InxGa1−xSb epitaxial layers on GaAs substrates (2018) (2)
- Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure (2009) (2)
- Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate (2018) (2)
- Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses (2018) (2)
- Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs (2012) (2)
- Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices (2017) (2)
- Growth and crystal structure investigation of self-catalyst InAs/GaSb heterostructure nanowires on Si substrate (2017) (2)
- Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTs (2009) (2)
- Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array (2021) (2)
- Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111) (2017) (2)
- Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique (1994) (2)
- A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multi-layer resist system and a single-step electron-beam exposure (1998) (2)
- The Selectivity of Reactive Ion Etch of Ga 0.5L In 0.49 P/Gaas (1994) (2)
- Effect of different tunnel diodes on the efficiency of multi-junction III-V solar cells (2014) (2)
- Investigation of Characteristics of Al2O3/n-InxGa1−xAs (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures (2013) (2)
- Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress (2021) (2)
- Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation (2010) (2)
- Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application (2014) (2)
- Study of Nickel Silicide Contact on (2003) (2)
- Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment (2021) (2)
- Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics (2008) (2)
- Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications (2019) (2)
- Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application (2009) (2)
- Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition (2018) (2)
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications (2007) (1)
- RF characteristics of AlGaN/GaN HEMTs under different temperatures (2012) (1)
- High k/III-V structures: Interfaces, oxides quality and down scaling (2012) (1)
- Experimental and Modeling on Atomic Layer Deposition Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface Treatments (2011) (1)
- Realization of GaN-based technology for high power and high frequency applications (2014) (1)
- Effect of AIN Spacer on the AIGaN/GaN HEMT Device Performance at Millimeter-Wave Frequencies (2018) (1)
- Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic (2007) (1)
- Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N2 Plasma Treatment (2013) (1)
- Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs (2019) (1)
- Flip-Chip-Based Multichip Module for Low Phase-Noise $V$-Band Frequency Generation (2010) (1)
- In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition (2013) (1)
- A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application (2000) (1)
- (Invited) Passivation of Al2O3/n, p-In0.53Ga0.47 as Interfaces: Influence of Plasma Enhanced Atomic Layer Deposition Aluminum Nitride with Various Plasma Powers (2014) (1)
- High Performance InAs-Channel HEMT for Low Voltage Milimeter Wave Applications (2007) (1)
- Design and fabrication of sub-wavelength structure on silicon nitride for solar cells (2009) (1)
- InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications (2009) (1)
- Shape effect on the reflectance of sub-wavelength structures on silicon nitride for solar cell application (2010) (1)
- Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications (2018) (1)
- Post sulfurization effect on the MoS2 grown by pulsed laser deposition (2016) (1)
- Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design (2016) (1)
- Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor (2016) (1)
- The Study of TiWN Schottky Contacts on n-Ga 0.51 In 0.49 P (1993) (1)
- Study of the Growth and Dislocation Blocking Mechanisms in InxGa1−xAs Buffer Layer for Growing High-Quality In0.5Ga0.5P, In0.3Ga0.7As, and In0.52Ga0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application (2014) (1)
- Self-catalyst growth of InAs and InAs/GaSb Heterostructure Nanowires on Si substrate by MOCVD (2017) (1)
- A study of the fabrication of flip-chip bumps using dry-film photoresist process on 300 mm wafer (2004) (1)
- Back-Gating Effects on the Ga 0.1In 0.9P/InP/InGaAs High-Electron-Mobility Transistor (1995) (1)
- A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT (2022) (1)
- WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors (2009) (1)
- All GaN-on-Si high power module design and performance evaluation (2013) (1)
- Fabrication process and 110 GHz measurement result of MS-to-CPW RF-via transition for RF-MEMS devices packaging applications (2009) (1)
- Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method (2008) (1)
- Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques (2011) (1)
- Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge multi-junction solar cell (2013) (1)
- Novel Pd/Ge/Cu Ohmic Contact to n-Type GaAs (2006) (1)
- InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric (2009) (1)
- Impact of bonding temperature on the performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology (2012) (1)
- Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs (2011) (1)
- Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs (2012) (1)
- Inx Ga1−x As materials for post CMOS application: Materials and device aspects (2014) (1)
- GaN MIS-HEMT with Low Dynamic ON-Resistance Using SiON Passivation (2016) (1)
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching (2012) (1)
- Bonding temperature effect on the performance of flip chip assembled 150nm mHEMT device on organic substrate (2010) (1)
- Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement (2021) (1)
- V-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technology (2011) (1)
- Electrical Characteristics of HfO 2 and La 2 O 3 Gate Dielectrics for In 0 (2009) (1)
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic HEMT for Ka-Band Applications (2006) (1)
- A Gold Free Fully Copper Metallized InGaP/GaAsHBT (2004) (1)
- Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications (2019) (1)
- Projected Efficiency of Polarization-Matched (2013) (1)
- Device Simulation of P-InAlN-Gate AlGaN/GaN high electron mobility transistor (2014) (1)
- Fabrication and characterization of nIn 0 . 4 Ga 0 . 6 N / pSi solar cell (2012) (1)
- A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer (2022) (1)
- Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT (2014) (1)
- Influence of oxynitride ( SiO x N y ) passivation on the microwave performance of AlGaN / GaN HEMTs (2008) (1)
- Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells (2018) (1)
- Tunnel Electroresistance in Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions under Hysteresis: Approach of the Point Contact Model and the Linearized Thomas–Fermi Screening (2022) (1)
- Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications (2021) (1)
- Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate (2013) (1)
- Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate (2022) (1)
- Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors (2011) (1)
- Evaluation of InAs QWFET for Low Power Logic Applications (2009) (1)
- DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries (2019) (0)
- An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure (2015) (0)
- Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications (2022) (0)
- Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations (2016) (0)
- Formation Mechanism and Reliability of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs (2010) (0)
- Corrections to “Device Linearity Comparison of Uniformly Doped and $delta$ -Doped $hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.6hboxGa_0.4hboxAs$ Metamorphic HEMTs” (2006) (0)
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- Performance improvement of InGaAs FinFET using NH3 treatment (2017) (0)
- High-performance E-mode GaN MIS-HEMT for Power Switching Applications (2018) (0)
- The parasitic reaction during the MOCVD growth of AlInN material (2012) (0)
- The Properties of the In x Ga 1-x Sb Epilayer Grown on GaAs Substrate by Metalorganic Chemical Vapor Deposition Using the Interfacial Misfit Dislocation Technique (2016) (0)
- Flip-Chip Packaging of MHEMT Device on Low-Cost Organic Substrate for W-band Applications (2010) (0)
- Effects of Al x Ga 1 x N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition (2014) (0)
- Inversion-Mode In0.53Ga0.47 As MOSFET with f T = 275 GHz and high V eff (2023) (0)
- High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique (2019) (0)
- Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD (2013) (0)
- Self-assembled In 0 . 22 Ga 0 . 78 As quantum dots grown on metamorphic Ga As Ge (2014) (0)
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- Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates (2014) (0)
- Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET (2021) (0)
- Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications (2009) (0)
- Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering (2023) (0)
- Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD (2021) (0)
- Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates (2016) (0)
- Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement (2015) (0)
- Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture (2004) (0)
- Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications (2013) (0)
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- Effect of Pressure on InAlN Films Grown by MOCVD for HEMT Application (2013) (0)
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- W-band penta-composite channel InAlAs/InGaAs metamorphic HEMT for high power application and comparison with pseudomorphic HEMT (2010) (0)
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- Characterizati ons of GaN Fil ms Grown on Si (111) Substrates under Vari ous Growth Temperatures of Mul ti ple Al N Buffer Layers (2012) (0)
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- Reactive Ion Etching of GalnP, GaAs, and AIGaAs (1995) (0)
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- A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects (2014) (0)
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- Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer (2021) (0)
- Multi-Energy Oxygen Ion Implantation for AlGaN/GaN HEMT Isolation (2006) (0)
- Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination (2022) (0)
- RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO 2 as Gate Insulator (2017) (0)
- Study of GaAs nucleation on Si substrate by Metal-organic Chemical Vapor Deposition (2013) (0)
- Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD) (2022) (0)
- An etch back technique to achieve sub-micron T-gate for GaAs FETs using I-line Stepper and phase shift mask (PSM) (2002) (0)
- Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique (2013) (0)
- Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/Hzo/TiN Capacitor (2021) (0)
- Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition (2016) (0)
- Role of Monolayer Indium Atom Distribution in Metalorganic Chemical Vapor Deposition of InAs/GaAs Epitaxy on Ge Substrate (2015) (0)
- High-frequency Sezawa guided mode of GaN/sapphire using high aspect ratio electrode (2019) (0)
- 30 GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT (2013) (0)
- High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition (2014) (0)
- Nitrogen-Passivated (010) In $_{\text{0.53}}$Ga$_{\text{0.47}}$ As FinFETs With High Peak ${g}_{{m}}$ and Reduced Leakage Current (2021) (0)
- The effect of surface passivation on the electrical performance of Al-GaN/GaN HEMTs with slant field plates (2016) (0)
- Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)] (2021) (0)
- Projected Efficiency of Polarization-Matched p-In<formula formulatype="inline"><tex Notation="TeX">$_{\bm x}$</tex> </formula>Ga<formula formulatype="inline"><tex Notation="TeX">$_{\bm {1-x}}$</tex></formula>N/i-In<formula formulatype="inline"><tex Notation="TeX"> $_{\bm y}$</tex></formula>Ga<formul (2013) (0)
- Interconnect copper metallization of InGaP HBTs using WNxas the diffusion barrier (2003) (0)
- Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures (2016) (0)
- Comparison of E-mode GaN HEMT Using Different Gate Oxide Stack Approach (2017) (0)
- Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD (2014) (0)
- Impact of Q-Time on the Passivation of Al 2 O 3 / pIn 0 . 53 Ga 0 . 47 As Interfaces Using Various Surface Treatments (2014) (0)
- Study on Ge/Si ratio and formation of Ni/P+Si1-xGexand Ni/Si/P+Si1-xGex (2003) (0)
- Sezawa Guided Mode on Periodic Grooves of GaN/Sapphire Substrate (2022) (0)
- Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications (2022) (0)
- WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application (2020) (0)
- Ohmic Contacts with low contact resistance for GaN HEMTs (2019) (0)
- 3D finite element simulation of morphological effect on reflectance of Si3N4 sub-wavelength structures for silicon solar cells (2011) (0)
- High Performance Enhancement-mode Al 2 O 3 / AlGaN / GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess (2016) (0)
- Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT (2020) (0)
- A metamorphic high electron-mobility transistor with reflowed submicron T-gate for high-speed optoelectronics applications (2003) (0)
- A novel metamorphic high electron mobility transistors with (InxGa1-xAs)m/(InAs)n superlattice channel layer for millimeter-wave applications (2009) (0)
- A comprehensive correlation between lattice strain and quantum well thickness of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMT with device performance for transconductance and linearity (2011) (0)
- Enhancement-mode GaN MIS-HEMTs with HfLaOx gate insulator (2016) (0)
- Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier (2004) (0)
- The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) (2014) (0)
- Low-Temperature Microwave Annealing Process for In 0.53 Ga 0.47 As MOSFETs (2017) (0)
- High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects (0)
- Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer (2008) (0)
- Reduction of negative differential conductivity effect of AlGaN/GaN HEMTs using gate scaling (2010) (0)
- Interfacial reactions of Pt-based Schottky contacts on InGaP (2008) (0)
- Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs (2006) (0)
- Selective Area Epitaxy of Axial Wurtzite -InAs Nanowire on InGaAs NW by MOCVD (2021) (0)
- Investigation of the Electrical Behaviors of Ge MOS capacitor on GaAs Substrate (2011) (0)
- Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs (2006) (0)
- (Invited) Negative Capacitance III-V FinFETs for Ultra-Low-Power Applications (2019) (0)
- MOCVD Growth of InAlN/GaN Heterostructures on Si Substrate for UV Photodiode Application (2013) (0)
- The growth and fabrication of high-performance In0.5Ga0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method (2012) (0)
- On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters (2013) (0)
- Low Cost, Low Power Consumption SPDT GaAs Switches with Copper Metallization and Gate Dielectric (2010) (0)
- Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications (2011) (0)
- A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications (1999) (0)
- A Gold Free Fully Copper Me HBT (2004) (0)
- Effectively Suppressed Short Channel Effects Use Nitrogen-Passivated of Ingaas Gate-All-Around Mosfets for High Switching Speed Logic Application (2020) (0)
- Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate (2003) (0)
- Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2 (2018) (0)
- Study of Interface Trap Charges in InAs Nanowire Tunnel FET (2017) (0)
- Metal-Insulator-Semiconductor Field-Effect Transistors (2013) (0)
- High-Quality 1 eV In (2011) (0)
- Effect of the Indium Compositions in Tri-Gate InxGa1-xAs HEMTs for High-Frequency Low Noise Application (2022) (0)
- Characterizations of GaN films grown on Si (111) substrates with various growth temperatures of multiple ALN buffer layers (2013) (0)
- High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator (2017) (0)
- Wafer size MOS2 with few monolayer synthesized by H2S sulfurization (2017) (0)
- Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process (2017) (0)
- BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations (2012) (0)
- The Effects of AlN Passivation Layer to Metal Work-Function and Band Alignment of Metal Oxide Semiconductor Devices (2015) (0)
- Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography (2012) (0)
- Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate (2005) (0)
- Logic performance of 40 nm InAs/InxGa1−xAs composite channel HEMTs (2010) (0)
- The Effect of Electrode Grid Pattern on Concentrated GaAs Solar Cells Efficiency (2012) (0)
- Ge/IIIV fin field-effect transistor common gate process and numerical simulations (2017) (0)
- Microfluid on chip transesterification reaction and real-time monitor by PN diode photodetector (2012) (0)
- An ultra low cost and miniature 950–2050 MHz GaAs MMIC downconverter‐I: Design approach and simulation (1995) (0)
- Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In 0.53 Ga 0.47 As MOSFET and FinFET Applications (2016) (0)
- Drain-Extended FinFET Technology for RF Power Applications (2016) (0)
- Fully Copper-Based Metallization for GaN High Electron Mobility Transistor Devices (2012) (0)
- Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing (2007) (0)
- The Circle-Grid Electrode on Concentrated GaAs Solar Cells Efficiency (2011) (0)
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology (2010) (0)
- Ultra-scaled III–V Quantum-Well Field Effect Transistor for THz and post-Si-CMOS digital applications (2010) (0)
- On the noise performance of 80nm InAs/In0.7Ga0.3As HEMTs using gate sinking technology (2008) (0)
- Study of enhance mode π-gate InAs HEMT for logic application (2017) (0)
- Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics (2010) (0)
- Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode (2022) (0)
- Study of HfO 2 /AlGaN/GaN MOS-HEMT for High Power Application (2014) (0)
- ZnO Nanotube on Crystalline Silicon Solar Cell Fabricated by Hydrothermal Processes (2012) (0)
- Growth of Strain InAs-Channel Quantum Well FETs on Si Substrate Using SiGe buffer (2008) (0)
- A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications (2010) (0)
- An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications (2010) (0)
- Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling Technique (2007) (0)
- A low noise composite-channel metamorphic HEMT for wireless communication application (2003) (0)
- InAs HEMTs for high frequency and high speed applications (2016) (0)
- MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature (2017) (0)
- VTH & Gm, max Instability Analysis of the Multiple GaN Chips based Cascode Power Module (2022) (0)
- Self-assembled In/sub 0.22/Ga/sub 0.78/As quantum dots grown on GaAs/Ge/Si/sub x/Ge/sub 1-x//Si substrate (2005) (0)
- Corrections to “AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications” (2017) (0)
- 3D-CMOS-TMDs AdvancedMaterials-2016-SI (2016) (0)
- Electrical and Optical Characterization of GaN Film Grown on Patterned Si (111) Substrates (2011) (0)
- On the electrical characteristics of the atomic layer deposition Al 2 O 3 /In 0.53 Ga 0.47 As MOSCAPs with various annealing processes (2013) (0)
- Impact of Al content on InAs/AlSb/Al x Ga1−x Sb tunnelling diode (2017) (0)
- First Demonstration of the Improvement of Metal/High-K Interface Roughness Utilizing in-Situ NH3/N2 Remote Plasma Preferred: Poster (2020) (0)
- Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO 2 /La 2 O 3 Gate Insulator for High Power Application (2015) (0)
- Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer (2015) (0)
- Front-side Copper Metallization Process for InAlAs/InGaAs Low Noise MHEMTs (2005) (0)
- Evaluation of GaN HEMT with field plate for reliability improvement (2016) (0)
- Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La 2 O 3 /SiO 2 Gate Dielectric (2015) (0)
- A high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 V (2002) (0)
- Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO 2 /In 0.53 Ga 0.47 As MOSCAPs for Low EOT and Low Interface State Densit (2015) (0)
- (Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications (2013) (0)
- K6 SOI Photodiode with Surface Plasmon Antenna: From Sensitivity Enhancement to Refractive Index Measurement for Biosensing (2014) (0)
- Extraction of Bias-dependent Source and Drain Resistances in AlGaN/GaN MIS-HEMTs Using Pulsed Measurement Method (2022) (0)
- Use of Ti/WNx/Ti/Cu multilayer as thin metal system for copper-airbridged GaAs LN-PHEMTs (2004) (0)
- Investigation of the Interface Stability of the Metal/HfO 2 /AlN/InGaAs MOS Devices (2017) (0)
- (Invited) PE-ALD Al 2 O 3 Gate Dielectric for High Performance InGaAs FinFET Applications (2018) (0)
- An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers (2008) (0)
- InAs-Channel HEMTs for Ultra-Low-Power LNA Applications (2008) (0)
- TiWN Schottky Contacts to n-Ga_ In_ P (1994) (0)
- Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band Applications (2010) (0)
- Improved Performance and Sufficient Reliability In 0.53 Ga 0.47 As FinFET Using NH3 Plasma Treatment (2017) (0)
- The Reliability of Multilevel Metallization on InGaAs/GaAs Layers (1994) (0)
- Evaluation of InAs HEMT with Non-alloyed Ohmic Contacts & Mesa Sidewall Etch for RF and Low-Power Logic Applications (2015) (0)
- Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD (2021) (0)
- The Materials Integration of Ge and In x Ga 1x As on Si Template for Next Generation CMOS Applications (2013) (0)
- RF Characteristics of LDMOS Transistors with Superjunction Structures (2015) (0)
- Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess (2016) (0)
- Cation Source Dependence of Ga0.5In0.5P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition (1994) (0)
- Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition (2022) (0)
- Thermal analysis and electrical performance of packaged AlGaN/GaN power HEMTs (2013) (0)
- The Effect of the Pattern of Circle-grid Electrode on Concentrated GaAs Solar Cells Efficiency (2010) (0)
- Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric (2022) (0)
- Flip-chip assembled 7 GHz ultra-low phase-noise InGaP HBT oscillator (2010) (0)
- Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives (2021) (0)
- Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application (2019) (0)
- Superior Peak to Valley Current Ratio of the InAs/Gasb Core-Shell Nanowires for Tunnel Diode Application (2020) (0)
- Gamma Ray Induced Surface Charge Redistribution and Change of Surface Morphology in Monolayer Ws2 (2022) (0)
- The Integration of Ge and III-V Materials on GaAs and Si for Post CMOS Applications (2012) (0)
- High Performance Tri-Gate AlGaN/GaN Power HEMTs (2017) (0)
- Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer (2022) (0)
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications (1996) (0)
- Low Interface Trap Density in In 0.53 Ga 0.47 as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO 2 / La 2 O 3 High-κ Dielectrics (2015) (0)
- Impact of Al content on InAs/AlSb/Al<i><sub>x</sub></i> Ga<sub>1â‹TM<i>x</i></sub> Sb tunnelling diode (2020) (0)
- Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination (2021) (0)
- An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications (2010) (0)
- "Improving Performance of In 0.53 Ga 0.47 As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N 2 /H 2 Gases (2015) (0)
- NEW EVOLVING DIRECTIONS FOR DEVICE PERFORMANCE OPTIMIZATION BASED INTEGRATION OF COMPOUND SEMICONDUCTOR DEVICES ON SILICON (2011) (0)
- Study of the CeO 2 /HfO 2 /InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures (2010) (0)
- Study of AlGaN / GaN MOS-HEMTs on Silicon Substrate with Al 2 O 3 Gate Insulator for Device Linearity Improvement (2011) (0)
- Materials growth and band offset parameters of the Al 2 O 3 /In 0.28 Ga 0.72 Sb/AlSb/GaSb/GaAs heterostructure (2017) (0)
- Studying of InSb MOS capacitors for post CMOS application (2013) (0)
- [Fellow International 2019 Special Lecture]III-V electronics for Logic, THz, and Power applications (2019) (0)
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