Eicke Weber

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Eicke Weber is affiliated with the following schools: University of California, Berkeley, University of Freiburg, University of Cologne

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Eicke Weber

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According to Wikipedia, Eicke Richard Weber is a German physicist. Life Scientific activity Weber grew up from 1955 in Cologne, where he also took his Abitur. He studied mathematics and physics at the University of Cologne from 1967. After graduating in 1972, he took on an assistant position at the RWTH Aachen and finished his doctorate in physics in 1976 with the topic Point Defects in Deformed Silicon and received his Ph.D. His habilitation followed in 1983 with the topic Transition Metals in Silicon. Weber joined the faculty of the Department of Materials Science and Engineering, University of California, Berkeley, first as Assistant in 1983, than Associate and since 2001 as Full Professor, and stayed there for 23 years, until he accepted in 2006 a call from the Fraunhofer society. He spent one research semester each as a visiting professor at Tōhoku-Gakuin University in Sendai, and Kyoto University in Japan. In Berkeley, he served 2004–06 as founding Chair of the Interdisciplinary Nanoscale Science and Engineering Graduate Group. From July 2006 to December 2016, he was director of the Fraunhofer Institute for Solar Energy Systems in Freiburg, Germany. In addition to his position as Director of ISE, he held the Chair of Physics/Solar Energy at the Albert Ludwigs University of Freiburg. From 2012 to 2016, he served also as executive director of the Centre for Renewable Energies at the University of Freiburg. He then worked as the Director of the Berkeley Education Alliance for Research in Singapore from January 2017 to May 2018.

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Eicke Weber's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Room-Temperature Ultraviolet Nanowire Nanolasers (2001) (7464)
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport (2001) (2460)
Transition metals in silicon (1983) (857)
Room-Temperature Ultraviolet Nanowire Nanolasers. (2001) (549)
Iron and its complexes in silicon (1999) (497)
A systematic analysis of defects in ion-implanted silicon (1988) (437)
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration (2001) (410)
Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures (1989) (367)
Physics of Copper in Silicon (2002) (330)
Dislocation-related photoluminescence in silicon (1985) (329)
Iron contamination in silicon technology (2000) (307)
Identification of AsGa antisites in plastically deformed GaAs (1982) (303)
The advanced unified defect model for Schottky barrier formation (1988) (279)
Terawatt-scale photovoltaics: Trajectories and challenges (2017) (277)
Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length (2003) (237)
Native point defects in low‐temperature‐grown GaAs (1995) (231)
Electrical properties and recombination activity of copper, nickel and cobalt in silicon (1998) (225)
Effects of electron concentration on the optical absorption edge of InN (2004) (213)
PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN (1997) (193)
Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors (2000) (192)
Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures (1989) (192)
Engineering metal-impurity nanodefects for low-cost solar cells (2005) (191)
Chemical natures and distributions of metal impurities in multicrystalline silicon materials (2005) (187)
Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon (1998) (179)
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN (2003) (154)
Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire (1996) (143)
Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration (2006) (133)
Control of metal impurities in "dirty" multicrystalline silicon for solar cells (2006) (132)
Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs (1994) (125)
Elastic moduli of gallium nitride (1997) (115)
Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells (2005) (113)
Fast series resistance imaging for silicon solar cells using electroluminescence (2009) (108)
Implementation of agrophotovoltaics: Techno-economic analysis of the price-performance ratio and its policy implications (2020) (107)
Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs (1998) (106)
Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986) (106)
Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration (2001) (103)
An analysis of temperature dependent photoluminescence line shapes in InGaN (1998) (102)
Chromium and chromium-boron pairs in silicon (1983) (97)
High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures (2001) (95)
Gettering of metallic impurities in photovoltaic silicon (1997) (94)
INGAN/GAN QUANTUM WELLS STUDIED BY HIGH PRESSURE, VARIABLE TEMPERATURE, AND EXCITATION POWER SPECTROSCOPY (1998) (94)
Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production (2010) (93)
The solution of iron in silicon (1980) (89)
Electrical and recombination properties of copper-silicide precipitates in silicon (1998) (88)
Effect of matrix on InAs self-organized quantum dots on InP substrate (1998) (86)
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate (1999) (84)
X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon (2002) (84)
Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells (2005) (82)
Recombination activity of copper in silicon (2001) (75)
Analysis of the carbon-related 'blue' luminescence in GaN (2005) (75)
Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction (2006) (70)
Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs (1999) (69)
Intersubband transitions in quantum wells (2000) (66)
Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies (1999) (65)
Lattice-matched HfN buffer layers for epitaxy of GaN on Si (2002) (63)
GA VACANCIES IN LOW-TEMPERATURE-GROWN GAAS IDENTIFIED BY SLOW POSITRONS (1997) (61)
Iron solubility in highly boron-doped silicon (1998) (61)
Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 (2000) (60)
Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer (1998) (59)
Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material (2006) (59)
Diffusion, solubility and gettering of copper in silicon (2000) (59)
Observation of metal precipitates at prebreakdown sites in multicrystalline silicon solar cells (2009) (57)
Transition metal co-precipitation mechanisms in silicon (2007) (57)
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy (1999) (56)
Analysis of copper-rich precipitates in silicon: chemical state, gettering, and impact on multicrystalline silicon solar cell material (2005) (56)
Empty state and filled state image of ZnGa acceptor in GaAs studied by scanning tunneling microscopy (1994) (56)
Iron as a thermal defect in silicon (1978) (55)
Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off (1999) (53)
Distortion and segregation in a dislocation core region at atomic resolution. (2005) (53)
Gettering of iron by oxygen precipitates (1998) (53)
Interstitial copper-related center in n-type silicon (1997) (53)
Observation of transition metals at shunt locations in multicrystalline silicon solar cells (2004) (52)
Micro‐photoluminescence spectroscopy on metal precipitates in silicon (2009) (51)
The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells (2000) (49)
Nickel solubility in intrinsic and doped silicon (2005) (49)
Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy (1987) (47)
Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996) (46)
Gettering simulator: physical basis and algorithm (2001) (46)
Effect of internal absorption on cathodoluminescence from GaN (1998) (46)
“Pinning” and Fermi level movement at GaAs surfaces and interfaces (1990) (46)
Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation (1986) (45)
Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy (2005) (45)
The advanced unified defect model and its applications (1988) (43)
Semiconductors and semimetals : intersubband transitions in quantum wells physics and device applications (1999) (42)
Low Temperature GaAs: Electrical and Optical Properties (1992) (41)
Electrical observation of the Au‐Fe complex in silicon (1984) (40)
CHEMICAL AND STRUCTURAL TRANSFORMATION OF SAPPHIRE (AL2O3) SURFACE BY PLASMA SOURCE NITRIDATION (1999) (40)
Synchrotron-based impurity mapping (2000) (39)
The dissociation energy and the charge state of a copper-pair center in silicon (1998) (39)
The Red (1.8 eV) Luminescence in Epitaxially Grown GaN (2000) (39)
Enhanced elimination of implantation damage upon exceeding the solid solubility (1987) (39)
The formation of a continuous amorphous layer by room .. temperature implantation of boron into silicon (1988) (39)
Transient ion drift detection of low level copper contamination in silicon (1997) (39)
Diffusivity transients and radiative recombination in intermixed In{sub 0.5}Ga{sub 0.5}As/GaAs quantum structures (1997) (38)
Advanced Gettering Techniques in ULSI Technology (2000) (37)
Influence of interstitial copper on diffusion length and lifetime of minority carriers in p-type silicon (1997) (37)
Transient ion-drift-induced capacitance signals in semiconductors (1998) (36)
The influence of structural properties on conductivity and luminescence of MBE grown InN (2004) (36)
Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy (1988) (35)
Defect identification in GaAs grown at low temperatures by positron annihilation (2000) (34)
Imperfections in III/V materials (1993) (34)
Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon (2004) (33)
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix (1998) (33)
Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain (2003) (32)
From synchrotron radiation to I-V measurements of GaAs Schottky barrier formation (1990) (32)
Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current (2005) (32)
AsGa antisite defects in GaAs (1983) (32)
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C (1999) (32)
Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN (2003) (32)
Lattice relaxation of pressure‐induced deep centers in GaAs:Si (1987) (31)
Modeling of Competitive Gettering of Iron in Silicon Integrated Circuit Technology (2003) (31)
Importance of carrier dynamics and conservation of momentum in atom-selective STM imaging and band gap determination of GaAs(110) (2003) (31)
Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth (2000) (31)
Origin of n‐type conductivity of low‐temperature grown InP (1994) (31)
Understanding defects in semiconductors as key to advancing device technology (2003) (31)
Selective excitation and thermal quenching of the yellow luminescence of GaN (1999) (30)
Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation (2003) (30)
Homoepitaxial growth of GaN using molecular beam epitaxy (1996) (29)
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy (1995) (29)
Reduction of iron solubility in silicon with oxygen precipitates (1986) (29)
Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon (2005) (29)
Semiconductors and Semimetals (1999) (29)
X-ray beam induced current/microprobe x-ray fluorescence: synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon (2004) (28)
Transition metal interaction and Ni-Fe-Cu-Si phases in silicon (2007) (28)
Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer (1994) (28)
Effects of stoichiometry on electrical, optical, and structural properties of indium nitride (2005) (27)
Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects (2003) (27)
Mechanism for annealing‐induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts (1987) (27)
Efficiency-limiting defects in silicon solar cell material (1996) (27)
Morphology of Au/GaAs interfaces (1986) (27)
Paramagnetic nitrogen in chemical vapor deposition diamond thin films (1991) (27)
Precipitation of Iron in Polycrystalline Silicon (1993) (26)
Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors (1998) (25)
Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors (2001) (25)
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress (2007) (25)
Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs (2002) (25)
Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics (1998) (24)
Raman spectroscopy of intrinsic defects in electron and neutron irradiated GaAs (1985) (24)
Complex intermetallic phase in multicrystalline silicon doped with transition metals (2006) (24)
Defect recognition and impurity detection techniques in crystalline silicon for solar cells (2002) (24)
Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy (2003) (23)
Competitive gettering of copper in Czochralski silicon by implantation‐induced cavities and internal gettering sites (1996) (23)
A Study of Gettering Efficiency and Stability in Czochralski Silicon (1995) (23)
Impact of stress on the recombination at metal precipitates in silicon (2010) (23)
Opportunities in silicon photovoltaics and defect control in photovoltaic materials (1993) (23)
Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations (2002) (22)
Transverse effective charge and its pressure dependence in GaN single crystals (1999) (22)
Pulsed laser deposition of aluminum nitride and gallium nitride thin films (1998) (22)
Defect Control in As-Rich GaAs (1997) (22)
Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy (2003) (21)
Investigations of well defined dislocations in silicon (1983) (21)
Proceedings of low temperature (LT) GaAs and related materials (1992) (21)
Nanoscale dopant-induced dots and potential fluctuations in GaAs (2003) (21)
Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level (1999) (20)
SCHOTTKY BARRIER INSTABILITIES DUE TO CONTAMINATION (1988) (20)
Chapter 2 EL2 Defect in GaAs (1993) (20)
Electronic properties of low-temperature InP (1993) (20)
Ge/Si heterostructures grown by Sn-surfactant-mediated molecular beam epitaxy (1995) (20)
Electrical characterization of copper related defect reactions in silicon (1999) (20)
Three-Dimensional Finite Element Simulation of Electro and Stress Migration Effects in Interconnect Lines (1997) (20)
Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system (1990) (20)
GaN thin films by growth on Ga-rich GaN buffer layers (2000) (20)
Temperature dependence of the iron donor level in silicon at device processing temperatures (2000) (19)
Predictive Simulation of Semiconductor Processing (2004) (19)
On the magnetic properties of dislocations in silicon (1974) (19)
Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering (2003) (18)
Ab initio prediction of the structure of glide set dislocation cores in GaAs (2002) (18)
Pressure-induced Γ-X crossover in the conduction band of ordered and disordered GaInP alloys (1994) (18)
New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989) (17)
Electrical characteristics of low temperature-Al0.3Ga0.7As (1993) (17)
Gettering in silicon-on-insulator wafers: experimental studies and modelling (2005) (17)
Characterization of semi-insulating GaAs for detector application (1996) (16)
Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers (2000) (16)
Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films (1996) (16)
Optically detected magnetic resonance studies of low-temperature InP (1993) (16)
EPR OF DISLOCATIONS IN SILICON (1979) (16)
Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films (1997) (16)
Gettering of Iron to Implantation Induced Cavities and Oxygen Precipitates in Silicon (1998) (16)
Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition (1991) (16)
Impact of growth temperature, pressure and strain on the morphology of GaN films (1996) (16)
Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth (2001) (15)
Carrier injection enhanced dislocation glide in silicon (1995) (15)
A chemical and structural investigation of Schottky and ohmic Au/GaAs contacts (1987) (15)
Decoration of flux pinning positions in YBa2Cu3O7−δ superconductors (1988) (15)
Annealing dynamics of arsenic-rich GaAs formed by ion implantation (1995) (15)
First direct observation of EL2-like defect levels in annealed LT-GaAS (1993) (15)
Chemistry and defects in semiconductor heterostructures (1989) (15)
Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988) (15)
On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si (1988) (15)
Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs (1992) (15)
Transition thickness of semiconductor heteroepitaxy (2000) (15)
Metal impurity precipitates in silicon: chemical state and stability (1999) (15)
Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition (1998) (14)
Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire (1997) (14)
Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition (1991) (14)
Structure and electrical properties of TiN/GaAs Schottky contacts (1988) (14)
Energy Research at the Fraunhofer Institute for Solar Energy Systems (2014) (14)
Transient current study of low‐temperature grown GaAs using an n‐i‐n structure (1995) (14)
The Photoluminescence and TEM Studies of Patterned GaAs films on Si Substrate Grown by Molecular Beam Epitaxy (1988) (14)
Analysis of Iron Precipitation in Silicon as a Basis for Gettering Simulations (1998) (14)
Electrical activity and precipitation behavior of copper in gallium arsenide (1995) (14)
Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements (1999) (14)
Two Electron D-State of DX-Centers (1991) (14)
Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights (2001) (14)
GaAsN-on-GaAs MBE using a DC plasma source (2001) (13)
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain (2000) (13)
Localized Donors in Gan: Spectroscopy Using Large Pressures (1997) (13)
Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained‐layer superlattices on heteroepitaxial GaAs/Si (1990) (13)
Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy (2005) (13)
THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS (1987) (12)
Predictive simulation of semiconductor processing : status and challenges (2004) (12)
Formation of copper precipitates in silicon (1999) (12)
Advances in photovoltaics (2012) (12)
Structure and thermal stability of Cu-In precipitates and their role in the semi-insulating behavior of InP:Cu (1992) (11)
Femtosecond nonlinear optics of low-temperature grown semiconductors (1999) (11)
MBE-Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant (1997) (11)
Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions (1994) (11)
Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy (1989) (11)
Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites (2001) (11)
Critical thickness anisotropy in highly carbon‐doped p‐type (100)GaAs layers grown by metalorganic molecular beam epitaxy (1991) (11)
Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates (1994) (11)
Effect of boron on the deep donors (DX centers) in GaAs:Si (1989) (11)
Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer (2005) (11)
Influence of gas transport on the oxidation rate of aluminum arsenide (2002) (11)
EL2-like defects in low temperature GaAs (1993) (10)
Pulsed Excimer Laser Processing of AlN/GaN Thin Films (1996) (10)
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 (2000) (10)
The formation of arsenic antisite defects during plastic deformation of GaAs (1986) (10)
Response to ``Comment on `Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs' '' [Appl. Phys. Lett. 67, 1331 (1995)] (1995) (10)
DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON (1983) (10)
Time-temperature profiles for optimal internal gettering of iron in silicon (1998) (10)
Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN (2004) (10)
High‐purity thermal treatment of silicon (1981) (10)
Antisite defects and EL2 in GaAs (1985) (10)
X‐ray excited optical luminescence from crystalline silicon (2009) (10)
Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs. (2002) (10)
Diffusion, Complexing and Precipitation of Transition Metals in Silicon (1984) (10)
Structural characterizations of initial nucleation of gaas on si films grown by modulated molecular beam epitaxy (1991) (10)
Ordering in ternary compound semiconductors studied with cross-sectional scanning tunneling microscopy (1998) (9)
Semi-Insulating InP:Cu (1992) (9)
Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source (2002) (9)
Stress Controlled MBE-growth of GaN:Mg and GaN:Si (1997) (9)
Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989) (9)
Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces (2004) (9)
High resistivity and ultrafast carrier lifetime in argon implanted GaAs (1996) (9)
Transition Metal Impurities in Silicon (1982) (9)
Density-functional theory of sp-bonded defects in III/V semiconductors (1993) (9)
Aluminum backside segregation (1996) (9)
Electrical properties and diffusion behavior of hafnium in single crystal silicon (2006) (8)
Generation-recombination low-frequency noise signatures in GaAs metal–semiconductor field-effect transistors on laterally oxidized AlAs (2003) (8)
Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers (2002) (8)
New synchrotron-radiation based technique to study localized defects in silicon: 'EBIC' with X-ray excitation (2000) (8)
Native point defect analysis in non-stoichiometric GaAs: an annealing study (1999) (8)
Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989) (8)
Photovoltaics moving into the terawatt age (2017) (8)
Cross‐sectional scanning tunneling microscopy of semiconductor vertical‐cavity surface‐emitting laser structure (1994) (8)
Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV (2005) (8)
Si donors (SiGa) in GaAs observed by scanning tunneling microscopy (1994) (8)
Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures (2001) (8)
Erratum: ‘‘Empty state and filled state image of ZnGa acceptor in GaAs studied by scanning tunneling microscopy’’ [Appl. Phys. Lett. 64, 1836 (1994)] (1994) (8)
Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989) (7)
Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications (1995) (7)
Determination of excess phosphorus in low‐temperature GaP grown by gas source molecular beam epitaxy (1994) (7)
Schottky barrier contacts on defect‐free GaAs (110) (1990) (7)
In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs (2002) (7)
Pressure controlled GaN MBE growth using a hollow anode nitrogen ion source (1996) (7)
Interactions Between Metals and Different Grain Boundary Types and Their Impact on Multicrystalline Silicon Device Performance (2006) (7)
New Al-Ni-Ge contacts on GaAs: Their structure and electrical properties (1988) (7)
Zincblende and wurtzite phases in InN epilayers and their respective band transitions (2006) (7)
AFM study of lattice matched and strained InGaAsN layers on GaAs (2001) (6)
Selective excitation of the yellow luminescence of GaN (1999) (6)
Characterization of EL2 in Annealed LT-GaAs (1993) (6)
Anisotropy of the Elastic Properties of Wurtzite InN Epitaxial Films (2004) (6)
Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers (1993) (6)
Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature (1996) (6)
Annealing of the photoluminescence W-center in proton-irradiated silicon (1999) (6)
A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches (2000) (6)
Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001 (2002) (6)
Characterization Of Electron Traps Resulting From Oxygen Precipitation In Cz Silicon (1986) (6)
Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties (1995) (6)
Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties (1995) (6)
Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures (1997) (6)
Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon (2002) (6)
P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire (2003) (6)
The thermal stability of iron precipitates in silicon after internal gettering (2003) (6)
Semi-insulating GaAs made by As implantation and thermal annealing (1993) (6)
A new EPR center due to dislocations in phosphorous doped silicon (1981) (5)
Hyperfine interactions from EPR of iron in silicon (1983) (5)
Magnetic properties of donors in GaAsP (1991) (5)
The ROSE Collaboration (R&d On Silicon for future Experiments) (2000) (5)
The Structure and Electrical Properties of Au Contacts to GaAs (1985) (5)
Polish‐induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990) (5)
The effect of implant species on defect anneal kinetics part II: Arsenic and germanium implantation (1987) (5)
Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons (1997) (5)
A Study of the Copper-Pair Related Centers in Silicon (1997) (5)
Comparison between photoluminescence and Raman scattering in disordered and ordered alloys of GaInP (1994) (5)
MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source (2001) (5)
Chemical and Structural Analysis of Nitridated Sapphire (1997) (5)
Local band and defect transitions in InGaN observed by valence electron energy loss spectroscopy (2006) (5)
Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy (1994) (5)
A NEW TYPE OF SEMI-INSULATING MATERIALS (1992) (5)
The mechanism of modulated optical reflectance imaging of dislocations in silicon (1990) (4)
Defects related to N-sublattice damage in electron irradiated GaN (2006) (4)
Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n‐type GaAs substrate (1993) (4)
Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ‐X crossover (1988) (4)
Conduction mechanism in arsenic implanted GaAs (1995) (4)
Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions (2001) (4)
Short-range ordering in Al x Ga 1-x As grown with metal-organic vapor-phase epitaxy (1999) (4)
Influence of the compensation in semi-insulating GaAs on the particle detector performance (1996) (4)
Annealing behavior of Au(Te)/n-GaAs contacts (1993) (4)
Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on 4-6 December 1991. Low Temperature (LT) GaAs and Related Materials. Volume 241. (1992) (4)
Al-based thermal oxides in vertical cavity surface emitting lasers (1997) (4)
Electro-optical measurement of low temperature GaAs (1993) (4)
What do we know about iron in silicon after 45 yr of research (1999) (4)
Ultrafast response times and enhanced optical nonlinearity in beryllium-doped low-temperature-grown GaAs (1998) (4)
Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cell materials (2004) (4)
The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (1992) (4)
The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers (1990) (4)
Crystal Field Efects On The Electron Spin Resonance Of Rare-earths In Ypd3: Comparison With Inelastic Neutrons Scattering Experiments (1981) (4)
Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments (2005) (4)
Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be (1998) (4)
Efficiency-limiting defects in polycrystalline silicon (1994) (4)
Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs (1999) (4)
Silicon Material Technology and Evaluation Center (SIMTEC) at Fraunhofer ISE - Achievements and Visions (2008) (4)
Determination of parameters of deep level defects from numerical fit of deep level transient spectroscopy spectra: Analysis of accuracy and sensitivity to noise (1998) (4)
ELECTRON PARAMAGNETIC RESONANCE STUDY OF Se-DOPED AlSb: EVIDENCE FOR NEGATIVE-U OF THE DX CENTER (1995) (4)
Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs : Be (2001) (3)
The Identification of Lattice Defects in GaAs and AlGaAs (1985) (3)
Scanning Tunneling Microscopy of Si Donors in GaAs (1993) (3)
Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs (1998) (3)
X-Ray Diffraction Studies of Low Temperature GaAs (1991) (3)
Low-Cost Harvesting of Solar Energy: The Future of Global Photovoltaics (2017) (3)
Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers (1998) (3)
Quantitative hrtem : a novel approach towards application oriented basic research (1996) (3)
High Field Limitation of Poole-Frenkel Emission Caused by Tunneling (1999) (3)
The Influence of Current Stressing on the Structure of Ag Contacts to GaAs (1987) (3)
SUPERCONDUCTIVITY IN INDIUM DIFFUSED GaAs (1992) (3)
Photoenergy: Progress in Si-Related Solar Cells for a Low Cost and High Efficiency (2012) (3)
HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER (1989) (3)
Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon. (2010) (3)
Vacancies in low-temperature-grown GaAs: observations by positron annihilation (1998) (3)
Properties Of Homoepitaxially Mbe-Grown Gan (1996) (3)
Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs (1986) (3)
Workshop on Low Temperature GaAs Buffer Layers Held 20 Apr 1990, San Francisco (1992) (3)
ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs (1999) (3)
The effect of residual lens aberrations on the determination of column positions around partial dislocations in GaAs (2003) (3)
Characterization of low‐temperature AlxGa1−xAs lattice properties using high resolution x‐ray diffraction (1995) (3)
Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular Beam Epitaxy (2003) (3)
Supralinearity of the 100°C thermoluminescence glow-peak of synthetic quartz obtained with isothermal measurements (1995) (3)
Transmission electron microscopy of Al-rich III-V oxides (1996) (3)
X-Ray Photoemission Spectromicroscopy Of Gan And AIGan (1998) (3)
Application of low temperature GaAs to GaAs/Si (1993) (3)
Optical and electrical properties of semi-insulating GaN:C grown by MBE (2002) (3)
Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN (1997) (2)
Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics (1998) (2)
Aluminum gettering and transition metal precipitates in PV silicon (1997) (2)
Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs (1998) (2)
Precipitation of Iron in FZ and CZ Silicon (1997) (2)
Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy (1989) (2)
Gettering of Transition Metals in Multicrystalline Silicon (1995) (2)
Characterization of semi-insulating InP: Cu (1992) (2)
Optical and Electrical Measurements of Low-Temperature InAlAs (1992) (2)
THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE (1985) (2)
Intrinsic Gettering of Iron in Silicon: A Quantitative Study (1986) (2)
Physical mechanisms of in situ surface gettering of metals in ribbon silicon for solar cells (2007) (2)
Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells (2001) (2)
Electrical characterization of low‐temperature Al0.3Ga0.7As using n‐i‐n structures (1996) (2)
Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers of the Workshop, 9-11 August 1999, Breckenridge, Colorado (2000) (2)
Deep Defects in Low-Temperature GaAs (1992) (2)
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport. (2001) (2)
Analysis of Nanoscale Stress in Strained Silicon Materials and Microelectronics Devices by Energy-Filtered Convergent Beam Electron Diffraction (2006) (2)
GROWTH OF (110) GaAs/GaAs BY MOLECULAR BEAM EPITAXY (1985) (2)
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces (1989) (2)
Control of stoichiometry dependent defects in low temperature GaAs (1996) (2)
Assessing the role of transition metals in shunting mechanisms using synchrotron-based techniques (2003) (2)
Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl 4 Dopant Source (2002) (2)
SELECTIVE UV-LASER PROCESSING FOR LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES (1998) (2)
Defect Control and Gettering in Cz-Silicon (1991) (2)
Origin of the magnetic circular dichroism of absorption of the arsenic antisite in GaAs and Al x Ga 1-x As (1998) (2)
The Role of Point Defects in Non-Stoichiometric III-V Compounds (1995) (2)
Transition Metal Contamination of Epitaxial Silicon (1984) (2)
Over‐relaxation of misfit strain in heavily carbon‐doped GaAs grown by metalorganic molecular beam epitaxy after annealing (1995) (2)
Comment on ‘‘Occupancy of the DX Center in N‐Al0.32Ga0.68As under uniaxial stress’’ (1992) (2)
Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP (1993) (2)
Gettering Strategies for SOI Wafers (2003) (2)
Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy (2000) (2)
FFirst TSC and DLTS Measurements of Low Temperature GaAs (1991) (2)
Quantitative Study of Metal Gettering in Silicon (1985) (2)
The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon (1986) (2)
Application of X-ray synchrotron techniques to the characterization of the chemical nature and recombination activity of grown-in and process-induced defects and impurities in solar cells (2002) (2)
Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon (1986) (2)
Efficiency Improvement of Crystalline Solar Cells: Final Subcontract Report; October 2001--December 2004 (2005) (2)
EPR Studies of defects in silicon (1981) (2)
Amorphization of Silicon by Boron Ion Implantation (1986) (2)
Micro-Luminescence Spectroscopy on Multicrystalline Silicon (2009) (2)
Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI 2 Fornation (1986) (2)
Optical, electrical, and diffusion properties of hafnium and zirconium in single-crystal silicon (2006) (2)
Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light (1992) (2)
Investigation of Microdefects in Multicrystalline Silicon for Photovoltaic Applications (1995) (2)
High-pressure investigation of InGan quantum wells. (1998) (2)
Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors (1985) (2)
Electronic Structure of PIn Antisite in InP (1993) (1)
Paramagnetic Resonance of Sn in AlGaAs (1992) (1)
Semiconductors and Semimetals: A Treatise (1995) (1)
Formation of Subthreshold Defects in Erbium Implanted Silicon (1998) (1)
Electrical Study of Metal/Gaas Interfaces (1989) (1)
Introductory Remarks: Strained Silicon (2006) (1)
Magnetic Circular Dichroism of Low-Temperature-Grown AlxGa1-xAs (1995) (1)
Hydrostatic Pressure Dependence of Eg-100 meV Photoluminescence Emissions in n-Type AlGaAs (1993) (1)
Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer (1993) (1)
Direct correlation of solar cell performance with metal impurity distributions in polycrystalline silicon using synchrotron-based x-ray analysis (1998) (1)
Investigation of lifetime limiting microdefects in polycrystalline silicon for photovoltaic applications (1994) (1)
Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer (1999) (1)
Semi-insulating III-V materials, Ixtapa, Mexico, 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992 (1993) (1)
Influence of Be doping on the structural properties of low-temperature grown GaAs (2000) (1)
Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs:Be heterostructures against thermally activated intermixing (2003) (1)
10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000 (2000) (1)
Are the Materials Properties of Indiumnitride Dominated by Defects (2007) (1)
Properties of C-doped LT-GaAs grown by MBE using CBr4 (1999) (1)
Potential of advanced-design solar central receiver power systems (1989) (1)
Change of electrical and structural properties of non-stoichiometric GaAs through Be doping (1998) (1)
Crystal field effects in the ESR spectra of Dy3+, Er3+ and Yb3+ in YPd3 (1981) (1)
Microdefects in Polycrystalline Silicon (1996) (1)
The influence of the sapphire substrate on the temperature dependence of the GaN bandgap (1999) (1)
Hafnium-related photoluminescence in single crystal silicon (2005) (1)
Strain effects in GaN thin film growth (1996) (1)
Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs (1986) (1)
Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System. (1989) (1)
Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon (2005) (1)
Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys (1991) (1)
Impact of iron contamination in multicrystalline silicon solarcells: origins, chemical states, and device impacts (2004) (1)
Subsurface Defects in Silicon Investigated by Modulated Optical Reflectance Measurements (1989) (1)
The effect of shallow donors and acceptors on AlAs/GaAs superlattices intermixing studied on atomic scale (1995) (1)
Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon (2003) (1)
The Influence of Initial Growth on Defect Generation in Mocvd Grown GaAs/Si Heteroepitaxial Layers (1990) (1)
Surface faceting of (110) GaAs: Analysis and elimination (1986) (1)
Iron and Nickel Solubilities in Heavily Doped Silicon and their Energy Levels in the Silicon Band Gap at Elevated Temperatures (1998) (1)
Differences and similarities between metal clusters in mc-Si materials from different manufacturers. (2004) (1)
Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping (1998) (1)
Recombination-Enhanced Dislocation Motion in SiGe and (1999) (1)
A New Approach to Grow Strain-Free GaAs on Si (1990) (1)
The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs (1996) (1)
Defects in GaAs bulk crystals and multi-layers caused by In diffusion (1993) (1)
Interactions of structural defects with metallic impurities in multicrystalline silicon (1996) (1)
Metastability in the excitonic luminescence of electron-irradiated GaN (2003) (1)
Correlations between structural, impurity, and electrical properties in efficiency-limiting “defect bands” in string ribbon silicon (2005) (1)
Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit? (1998) (1)
Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering (1997) (1)
X-ray diffractometer as a tool for examining lattice relaxation phenomena (1991) (1)
Transistors and Atoms (2004) (1)
Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium (1998) (1)
Low Level Cu Contamination of Silicon During Wet Cleaning Studied by Transient Ion Drift (1997) (1)
Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint (2004) (1)
Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency (2003) (1)
Defect engineering in MBE grown GaAs based materials (2000) (1)
External Gettering Comparison and Structural Characterization of Single and Polycrystalline Silicon (1995) (1)
Semi-insulating behavior of Cu doped InP (1991) (1)
The effect of shallow donors and acceptors on AlAs/GaAs superlattices intermixing studied on atomic scale (1995) (1)
Atomic Structure of Metal/GaAs Interfaces: The Role of Defects, Epitaxy, and Morphology (1993) (1)
Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN (2001) (1)
Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon (1997) (1)
Application of synchrotron radiation-based X-ray fluorescence microprobe to detect impurities at the location of shunt (2000) (1)
Southwest Project: resource/institutional requirements analysis. Volume IV. Institutional studies (1979) (0)
Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te (1991) (0)
Aluminum gettering in single and multicrystalline silicon (1995) (0)
Field-modulated microwave absorption study of Pb-modified BiCaSrCuO (1989) (0)
Native point defects in non-stoichiometric GaAs doped with beryllium (2001) (0)
Analysis of Nano-scale Strain Near Shallow Trench Isolation Structures by Energy-filtered Convergent Beam Electron Diffraction (2006) (0)
Surface Acoustic Wave Detection of Large Lattice Relaxation of Metastable EL2 in LT-GaAs (1991) (0)
Defect recognition and image processing in III-V compounds, II : proceedings of the Second International Symposium on Defect Recognition and Image Processing in III-V Compounds (DRIP II), Monterey, California, April 27-29, 1987 (1987) (0)
Structure and Electronic Properties of Misfit Dislocations in ZnSe/GaAs(001) Heterojunctions (1994) (0)
Chapter 5 Scanning Tunneling Microscopy of Defects in Semiconductors (1999) (0)
Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220°C (1992) (0)
Point Defects in GaAs (1989) (0)
Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures (2002) (0)
Complex microwave susceptibility of natural squid structures (1989) (0)
Surface States at LT GaAs-n+ GaAs Interfaces (1992) (0)
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices (1989) (0)
The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells (1998) (0)
The electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers (1997) (0)
LOW POWER MOBILE NUCLEAR POWER PLANT WITH RADIOACTIVE HEAT SOURCE. PART C. 500 KW POWER PLANT FOR GROUND PRIME MOVER. (Report No. 43-103). Final Report (1952) (0)
Separation of electron and hole dynamics in low-temperature grown GaAs (2000) (0)
Scanning tunneling microscopy of point defects and interfaces in compound semiconductors (1995) (0)
Growth and Characterizations of Gaas on Inp with Different Buffer Structures by Molecular Beam Epitaxy (1989) (0)
Structural Defects in Epitaxial (2013) (0)
Lifetime‐limiting defects in silicon solar cell material revealed by iron precipitation kinetics (2008) (0)
Photoluminescence Characterization of p-type GaN:Mg (1997) (0)
Structural and photoluminescence analysis of Er implanted LT-GaAs (1998) (0)
Superconductivity in Low-Temperature Grown III-V Thin Films. (1996) (0)
Crystal Field Effects on the ESR Spectra of Rare Earths in CePd3 (1982) (0)
Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy (1989) (0)
Stress-Induced Nitrogen and Oxygen Segregation and Complexing Investigated by High Resolution Synchrotron FTIR: Preprint (2004) (0)
Structural, Elemental, and Chemical Complex Defects in Silicon and Their Impact on Silicon Devices (2009) (0)
PERSISTENT PHOTOCONDUCTIVITY DUE TO NEGATIVE U CENTERS IN COMPOUND SEMICONDUCTORS (1988) (0)
SUPPRESSIO OF DEFECT PROPAGATION IN HETEROEPITAXIAL STRUCTURES BY STRAINED LAYER SUPERLATTICES (2013) (0)
Lattice relaxation of the DX centers in Ga/sub 1-x/Al/sub x/As and of the pressure-induced deep donors in GaAs (1987) (0)
Saguaro Power Plant Solar Repowering Project. Volume III. Appendices. Final technical report, September 1979-July 1980 (1980) (0)
Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics (2008) (0)
Pressure dependence of of the DX center in Al/sub 0. 35/Ga/sub 0. 65/As:Te (1988) (0)
Fe/Cu precipitation and precipitate dissolution in silicon (2008) (0)
Magnetic Resonance of Defects in Heteroepitaxial Semiconductor Structures (1992) (0)
Interpretation of GaAs(110) STM Image Contrast by the Symmetry ofthe Surface Bloch Wave Function (1998) (0)
Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated with SiO 2 Precipitation (1996) (0)
Atomic Scale Interface Structure of Ino.2Gao.sAs/GaAs Strained Layers Studied by Cross-Sectional Scanning Tunneling Microscopy (2007) (0)
Carrier recombination in InGaN nanostructures: carrier localization in quantum-dots, carrier separation by quantum-confined Stark effect (2003) (0)
Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si (1991) (0)
Lateral oxidation of AlAs thin films (1998) (0)
DETERMINATION OF Fez+ and Fe CONCENTRATIONS IN SEMI-INSULATING InP:Fe (2000) (0)
Energies of x conduction band minima in disordered and ordered GaInP{sub 2} alloys (1994) (0)
Raman spectroscopy study on order-disordered Ga/sub 0.52/In/sub 0.48/P on GaAs grown by MOVPE (1995) (0)
Determination of Fe/sup 2+/ and Fe/sup 3+/ concentrations in semi-insulating InP:Fe (1992) (0)
Chapter Two – Introduction (2012) (0)
Distribution and Chemical State of Cu-rich Clusters in Silicon (2004) (0)
Studies of Lattice-Mismatched and Low-Temperature-Grown Semiconductor Multiple-Phase Systems. (1994) (0)
Electronic Properties of Low-Temperature Grown III/V Thin Films. (1994) (0)
Application of x-ray fluorescence microprobe technique for the analysis of fully processed solar cells (2001) (0)
Dependence of Precipitation Behavior of Cu and Ni in CZ Multicrystalline Silicon on Cooling Conditions: Preprint (2004) (0)
Properties of Cu in GaAs (1991) (0)
RAMAN STUDY OF NEUTRON IRRADIATED GaAs (1985) (0)
Changes in Microwave Absorbtion of New High T c Superconductors with Small Magnetic Fields (1987) (0)
AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures (1992) (0)
LOW POWER MOBILE NUCLEAR POWER PLANT WITH RADIOACTIVE HEAT SOURCE. PART B. 1 KW POWER PLANT FOR GROUND INSTALLATION. (Report No. 43-102). Final Report (1952) (0)
Annealing of low-temperature grown semiconductors: material optimization for ultrafast all-optical gating (1999) (0)
Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress (1992) (0)
Solar repowering central molten salt receiver system and interface requirements (1981) (0)
Analysis and Optimization of Oxidized Heterolayers (1998) (0)
Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates (1990) (0)
Progress in Materials for Solar Energy Conversion (2011) (0)
A COMPARISON OF THE PRESSURE-INDUCED DEEP DONORS IN GAAS:SI AND THE DX CENTERS IN GAALAS:SI ALLOYS (1988) (0)
Structural and Photoluminescence Studies of Er Implanted Lt-GaAs:Be (1998) (0)
Tem Structure Investigations of Low-Temperature MBE Grown Inalas Layers on INP Substrate (1992) (0)
Atomic Scale Interface Structure of In{sub 0.2}Ga{sub 0.8}As/GaAs Strained Layers Studied By Cross-Sectional Scanning Tunneling Microscopy (1993) (0)
Saguaro Power Plant Solar Repowering Project. Volume II. System requirements specification. Final technical report, September 1979-July 1980 (1980) (0)
High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001) (1999) (0)
Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract) (1993) (0)
Chemistry and Defects in Semiconductor Heterostructures. Materials Research Society Symposium Proceedings. Volume 148 (1990) (0)
The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties. (1991) (0)
Ultrafast carrier dynamics in Be-doped low temperature grown GaAs studied by double-pulse excitation (1999) (0)
Simultaneous potential and dopant mapping at p-n junctions using scanning tunneling microscopy (2018) (0)
Recombination Related to Two-Dimensional Electron Gas of Al x Ga 1-x N/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence (2003) (0)
Structure investigations of low-temperature MBE grown InAlAs layers on InP[001] substrate (1992) (0)
Mechanism of interdiffusion and thermal stability upon annealing of AlAs/GaAs:Be quantum wells grown under low temperature conditions. (2002) (0)
Scanning Tunneling Microscopy Studies of GaAs 1-x P x Single Crystals (1995) (0)
From molecular aggregates to organic solar cells (2011) (0)
Improved heteroepitaxial MBE GaN growth with a Ga metal buffer layer (2000) (0)
Direct Electron Beam Processing Of Semiconductor Nanostructures (2002) (0)
Low Frequency Noise Characterization System of Advanced Electronics Devices (2002) (0)
Solar-electric generation for utility grid deployment (1982) (0)
STRUCTURE AND RELIABILITY OF METAL CONTACTS TO GaAs (1991) (0)
Analysis of Stoichiometry-Related Defects in Group III - Nitrides (2003) (0)
Growth and characterization of long wavelength (1 micron) GaInAsN photo-detectors using gas source molecular beam epitaxy (1999) (0)
Helmut Alexander – A Life for Science – Alive in Science (2011) (0)
Southwest Project: resource/institutional requirements analysis. Volume III. Systems integration studies (1979) (0)
Predictive Modeling of Transition Metal Gettering: Applications and Materials Science Challenges (2004) (0)
Electrical and optical properties of carbon-related defects in GaN (2003) (0)
Investigations of the Nature and Impact of Iron Contamination in Multicrystalline Silicon Solar Cell Materials (2005) (0)
Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface (1992) (0)
Radiation-induced defects in oxygen-enriched silicon detector materials (2001) (0)
External gettering of silicon materials containing various efficiency-limiting defects (2008) (0)
Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces (1990) (0)
Non-Stoichiometric Layers of III/IV Semiconductors (1998) (0)
TEM Structure Investigations (1992) (0)
PHOTOTHERMAL SPECTRDSCOPY AND IMAGING OF GaAs (1984) (0)
Growth of Strain-Free GaAs on Si/Sapphire (1993) (0)
New Aspects of (Semi-Insulating) GaP:Cu (1993) (0)
Analysis of shunts in multicrystalline silicon solar cells using microprobe x-ray fluorescence technique (2002) (0)
Studies of the Microscopic Nature of Cu-Pairs in Silicon (1998) (0)
A New Photoluminescence Band in Hafnium-implanted Silicon (2005) (0)
Statistically meaningful data on the chemical state of iron precipitates in processed multicrystalline silicon using synchrotron-based x-ray absorption spectroscopy. (2004) (0)
Scanning Tunneling Microscopy Characterization of Heterostructures (1996) (0)
GADEST 2005 (Gettering And Defect Engineering in Semiconductor Technology) conference (2005) (0)
Identification of metal-oxygen complexes as lifetime limiting defects in solar cell materials (2001) (0)
Photovoltaics and environmental impact considerations (1978) (0)
Southwest Project: resource/institutional requirements analysis. Volume II. Technical studies (1979) (0)
Effects of Stoichiometry on Electrical and Optical Properties of InN (2005) (0)
New Materials: Gallium Nitride (2013) (0)
Efficiency Improvement of Crystalline Solar Cells: Final Subcontract Report, 1 January 2002 - 30 September 2006 (2007) (0)
TEM structure investigations of low-temperature MBE grown InAlAs layers on InP[l angle]001[r angle] substrate (1992) (0)
Metamorphic Multijunction Solar Cells with World Record Efficiencies - Electronics and Photonics Division Award Talk (2009) (0)
PRECIPITATION 54 flb 967 1 qG REC ' E I VED (2008) (0)
Lattice Relaxation of the DX Centers in Ga 1 _xAixAs and of the Pressure-Induced Deep Donors in GaAs (2013) (0)
Cross-sectional scanning microscopy and spectroscopy of semi-insulating GaAs (2002) (0)

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