Eoin P. O’reilly

Eoin P. O’reilly's AcademicInfluence.com Rankings

Eoin P. O’reilly

Physics

#6762

World Rank

#8746

Historical Rank

physics Degrees

Download Badge

Physics

Eoin P. O’reilly's Degrees

Bachelors Physics National University of Ireland

Why Is Eoin P. O’reilly Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Eoin P. O’reilly's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots. (2000) (409)
Theory of defects in vitreous silicon dioxide (1983) (335)
Valence band engineering in strained-layer structures (1989) (332)
Theory of the electronic structure of GaN/AlN hexagonal quantum dots (2000) (299)
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen (2001) (240)
Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys (1999) (220)
Strain distributions in quantum dots of arbitrary shape (1999) (201)
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs (2011) (185)
Band-structure engineering in strained semiconductor lasers (1994) (184)
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys. (2004) (163)
Band engineering in dilute nitride and bismide semiconductor lasers (2012) (157)
Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots (2000) (151)
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers (2002) (147)
Tight-binding and k?p models for the electronic structure of Ga(In)NAs and related alloys (2002) (141)
Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers (2003) (132)
The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers (1998) (107)
Dynamics of light propagation in spatiotemporal dielectric structures. (2007) (102)
Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x∕GaAs quantum wells (2004) (94)
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots (2001) (92)
Trends in the electronic structure of dilute nitride alloys (2009) (92)
A simple method for calculating strain distributions in quantum dot structures (1996) (90)
Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots (2000) (90)
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1- xNx (2006) (87)
Intrinsic limits on electron mobility in dilute nitride semiconductors (2003) (87)
Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers (1993) (85)
Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides (2013) (85)
Analytic solutions for strain distributions in quantum-wire structures (1997) (80)
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells (2015) (78)
k · P Model of Ordered GaNxAs1—x (1999) (74)
Impact of alloy disorder on the band structure of compressively strained gabixas1-x (2013) (74)
Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states (2004) (74)
Derivation of 12- and 14-band k · p Hamiltonians for dilute bismide and bismide-nitride semiconductors (2013) (73)
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime (2001) (72)
Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers (2000) (71)
Active Region Design for High-Speed 850-nm VCSELs (2010) (71)
Theory of reduced built-in polarization field in nitride-based quantum dots (2010) (70)
Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers (1991) (63)
Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics (1995) (62)
InSb1-xNx growth and devices (2003) (62)
Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies (2002) (62)
Electron and hole wave functions in self-assembled quantum rings (2004) (61)
Optical gain in GaAsBi/GaAs quantum well diode lasers (2016) (59)
On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers (2004) (59)
Auger recombination in long-wavelength infrared InNxSb1−x alloys (2001) (59)
Improved dynamics and linewidth enhancement factor in strained-layer lasers (1989) (58)
On gain saturation in quantum dot semiconductor optical amplifiers (2005) (57)
Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells (1995) (56)
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots (2005) (56)
Influence of nitrogen resonant states on the electronic structure of GaNxAs1−x (2001) (56)
Alloy scattering ofn-type carriers inGaNxAs1−x (2006) (56)
Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study (2013) (55)
Theory of improved spectral purity in index patterned Fabry-Pérot lasers (2005) (53)
Improved performance of long-wavelength strained bulk-like semiconductor lasers (1993) (51)
Nature of the band gap of silicon and germanium nanowires (2006) (51)
Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers (1999) (51)
Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model (2004) (50)
Dependence of Threshold Current on QW Position and on Pressure in 1.5 ?m InGaAs(P) Lasers (1999) (49)
Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers (2000) (47)
Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory (2015) (46)
Pressure dependence of DX center mobility in highly doped GaAs (1989) (44)
Emission dynamics and optical gain of 1.3-/spl mu/m (GaIn)(NAs)/GaAs lasers (2002) (43)
Low threshold current and high differential gain in ideal tensile‐ and compressive‐strained quantum‐well lasers (1992) (43)
Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control (1998) (41)
Optimization of long wavelength InGaAsP strained quantum-well lasers (1995) (41)
Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots (2011) (41)
Polarization fields in nitride-based quantum dots grown on nonpolar substrates (2009) (40)
Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: а Quantum Mechanical Consideration (2013) (40)
Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers (1999) (40)
Band gap bowing and optical polarization switching in Al 1−x Ga x N alloys (2015) (40)
Gain characteristics of ideal dilute nitride quantum well lasers (2002) (40)
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As) (2002) (38)
Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells (1989) (38)
Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers (1999) (37)
Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers (1995) (37)
Optical gain in wide bandgap GaN quantum well lasers (1996) (36)
On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers (2003) (36)
Optimization of material parameters in 1.3-μm InGaAsN-GaAs lasers (2003) (36)
Optical Matrix Element in InAs/GaAs Quantum Dots: Dependence on Quantum Dot Parameters (2005) (36)
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx (2006) (36)
The influence of inter-diffusion on electron states in quantum dots (1999) (35)
Theory of Conduction Band Structure of InNxSb1-x and GaNxSb1-x Dilute Nitride Alloys (2008) (35)
Theory of optical gain in ideal GaN heterostructure lasers (1995) (35)
Electronic and optical properties of nonpolar a-plane GaN quantum wells (2010) (35)
The structure of amorphous GeSe and GeTe (1981) (34)
Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure (1997) (34)
Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots (2010) (34)
Complex emission dynamics of type-II GaSb/GaAs quantum dots (2009) (34)
Direct measurement and analysis of the conduction band density of states in diluted GaAs 1-x N x alloys (2010) (33)
Determination of type-I band offsets in GaBixAs1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations (2015) (33)
12‐band k · p model for dilute bismide alloys of (In)GaAs derived from supercell calculations (2013) (33)
Built-in field control in alloyed c-plane III-N quantum dots and wells (2011) (33)
Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory (2015) (32)
Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides (2012) (32)
Breakup of the conduction band structure of diluteGaAs1−yNyalloys (2005) (32)
Theory of electron mobility in dilute nitride semiconductors (2004) (32)
Gain and radiative current density in InGaAs/lnGaAsP lasers with electrostatically confined electron states (1994) (32)
Evidence for large monomolecular recombination contribution to threshold current in 1.3 /spl mu/m GaInNAs semiconductor lasers (2001) (31)
Theory of the Electronic and Optical Properties of Dilute Bismide Quantum Well Lasers (2015) (31)
Spectral manipulation in Fabry-Perot lasers: perturbative inverse scattering approach (2006) (30)
Pressure and Temperature Dependent Studies of GaNxAs1–x/GaAs Quantum Well Structures (2001) (30)
A tight-binding-based analysis of the band anti-crossing model in GaNxAs1−x (2004) (30)
Erratum: Dipole nanolaser [Phys. Rev. A 71, 063812 (2005)] (2006) (30)
Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure (2004) (30)
Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers (2001) (30)
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019) (29)
Comparison of stress and total energy methods for calculation of elastic properties of semiconductors (2013) (29)
Noise‐Assisted Crystallization of Opal Films (2012) (29)
A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures (2014) (27)
High pressure determination of AlGaInP band structure (1995) (27)
Biexciton and exciton dynamics in single InGaN quantum dots (2005) (27)
Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 μm Fabry-Perot diode laser (2008) (27)
Design of Single-Mode and Two-Color Fabry--PÉrot Lasers With Patterned Refractive Index (2007) (26)
Derivation of a 10-band model for dilute nitride semiconductors (2003) (26)
Calculations of the threshold current and temperature sensitivity of A (GaIn)As strained quantum well laser operating at 1.55 μm (1987) (25)
Theory of conduction band dispersion in diluteBxGa1−xAsalloys (2007) (25)
Theory of GaN Quantum Dots for Optical Applications (2009) (24)
Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots (2004) (24)
Progress on Germanium–Tin Nanoscale Alloys (2020) (24)
Coulomb effects in type‐II Ga(As)Sb quantum dots (2009) (23)
Insights into carrier recombination processes in 1.3 [micro sign]m GaInNAs-based semiconductor lasers attained using high pressure (2001) (23)
Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1-yInyNxAs1-x quantum wells (2005) (23)
Dependence of Exciton Energy on Dot Size in GaN/AlN Quantum Dots (2006) (23)
Intrinsic limits on electron mobility in disordered dilute nitride semiconductor alloys (2004) (21)
GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics (2017) (21)
Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states (2016) (21)
Inverse scattering approach to multiwavelength Fabry-Perot laser design (2006) (21)
Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers (2009) (21)
Mechanism of Synchronization in Frequency Dividers (2009) (21)
The influence of tensile strain on differential gain and Auger recombination in 1.5-/spl mu/m multiple-quantum-well lasers (1998) (20)
The Importance of Recombination via Excited States in InAs/GaAs $\hbox{1.3}\;\mu$m Quantum-Dot Lasers (2009) (20)
Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x (2006) (20)
A flexible, plane-wave based multiband $${\mathbf{k}\cdot\mathbf{p}}$$ model (2012) (19)
Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy (2001) (19)
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties (2012) (19)
Low Threshold Current InP-Based Strained-Layer 1.55µm Lasers (1988) (19)
Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso > Eg (2015) (18)
Influence of strain relaxation on the electronic properties of buried quantum wells and wires (1995) (18)
Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells (2003) (18)
Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys (2013) (18)
Pressure dependence of light-hole transport in strained InGaAs/GaAs (1990) (18)
Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells (2014) (17)
Optical transition pathways in type-II Ga(As)Sb quantum dots (2009) (16)
Evolution of N defect states and optical transitions in ordered and disordered GaP1−xNx alloys (2008) (16)
Calculation of strain relaxation in strained-layer structures: comparison of atomistic and continuum methods (1994) (16)
Progress in the design and development of AlGaInP visible VCSELs (2000) (15)
Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx (2008) (15)
Semiconductor lasers take the strain (1992) (15)
Comparison of first principles and semi-empirical models of the structural and electronic properties of $$\hbox {Ge}_{1-x}\hbox {Sn}_{x}$$ alloys (2019) (15)
Theory of electronic structure of BGaAs and related alloys (2008) (15)
The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers (2008) (14)
Gap solitons in spatiotemporal photonic crystals (2007) (14)
The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure (1988) (14)
Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures (2017) (14)
Built-in field reduction in InGaN/GaN quantum dot molecules (2011) (14)
Theoretical studies of the bonding of CO to transition metal atoms in cluster carbonyl molecules and at surfaces (1979) (14)
A universal model for trends in A1-type defect states in zincblende and diamond semiconductor structures (2003) (14)
The electronic structure of Ge-Se and Ge-Te compounds (1982) (13)
Important loss mechanisms in visible lasers revealed by hydrostatic pressure (1993) (13)
The electronic structure of amorphous carbon (1985) (13)
Nonlinear gain effects in strained-layer lasers (1990) (13)
Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast (2010) (13)
Effects of strain and GaInP2 superlattice ordering on laser polarization (1994) (13)
Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies (2003) (12)
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers (2014) (12)
Theory of reduced threshold current density in GaAs/AlGaAs quantum well lasers (1990) (12)
The detection of chemical order in non-crystalline alloys from their valence s bands (1983) (12)
Influence of cluster states on band dispersion in bulk and quantum well (ultra-)dilute nitride semiconductors (2004) (11)
Theoretical analysis of the electronic structure of truncated-pyramidal GaN/AlN quantum dots (2001) (11)
Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k⋅p Hamiltonian (2014) (11)
Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys (2019) (11)
Polarisation selectivity in ordered GaInP2 vertical cavity surface-emitting lasers (1995) (11)
Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots (2004) (11)
An analysis of 1.55μm InAs∕InP quantum dash lasers (2008) (11)
Theory and design of InxGa1−xAs1−yBiy mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates (2018) (11)
Analysis of band‐anticrossing model in GaNAs near localised states (2011) (10)
Direct measurement of band offsets in GaInP/AlGaInP using high pressure (1995) (10)
Built-in fields in non-polar InxGa1-xN quantum dots (2010) (10)
Investigation of 1.3-/spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques (2003) (10)
Tight binding analysis of the electronic structure of dilute bismide and nitride alloys of GaAs (2011) (10)
Fine-structure splitting in large-pitch pyramidal quantum dots (2012) (10)
Intervalence band solitary waves in semiconductor quantum wells (2006) (10)
Axial-strain effects on superlattice band structures (1986) (10)
Built‐in fields in stacked InGaN/GaN quantum dots (2011) (9)
Antimony-based strained-layer 2-2.5 mu m quantum well lasers (1993) (9)
Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots (2012) (9)
Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content (2016) (9)
Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates (2010) (9)
Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates (2010) (9)
Quantum Theory of Solids (2002) (8)
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells (2016) (8)
Theory of intermediate- and high-field mobility in dilute nitride alloys (2011) (8)
Radiative performance of strained-layer lasers (1993) (8)
Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure (2011) (8)
The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots (2002) (8)
Optical absorption of dilute nitride alloys using self-consistent Green’s function method (2014) (8)
Hydrostatic Pressure Dependence of the Threshold Current in 1.5 μm Strained Quantum Well Lasers (1996) (8)
Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells (2015) (8)
The Success of Strained Layer Lasers Elucidated by High Pressure Experiments (1993) (8)
N-Composition and Pressure Dependence of the Inter Band Transitions of Ga(N,As)/GaAs Quantum Wells (2002) (7)
Determination of Gain and Loss Mechanisms in Semiconductor Lasers Using Pressure Techniques (1996) (7)
Effect of localized B and N states on the magneto‐transport of (B,Ga,In)As and (Ga,In)(N,As) (2007) (7)
Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green’s function study (2020) (7)
Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy (2000) (7)
Electronic structure of semiconductor nanostructures: A modified localization landscape theory (2019) (7)
CHARACTERIZATION AND DESIGN OF SEMICONDUCTOR LASERS USING STRAIN (1989) (7)
Excitonic binding energies in non-polar GaN quantum wells (2010) (7)
Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well (1992) (7)
THE ELECTRONIC-STRUCTURE OF DEFECTS IN AMORPHOUS GAAS (1984) (7)
Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs (2000) (7)
A comparison of the recursion method and the equation-of-motion method for the calculation of densities of states (1985) (7)
Dipole lasing phase transitions in media with singularities in polarizabilities (2006) (7)
Tight-binding approach to calculation of localised perturbations in semiconductors (2010) (7)
Theoretical study of the electronic structure of self-organized GaN/AlN QDs (2000) (7)
Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B,Ga,In)As (2011) (7)
Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers (2016) (7)
Luminescence properties of dilute bismide systems (2014) (7)
Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations (2016) (7)
Dipole nano-laser (2008) (6)
Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation (2003) (6)
Piezoelectric properties of zinc blende quantum dots (2012) (6)
On the asymptotic form of the recursion method basis vectors for periodic Hamiltonians (1984) (6)
Electronic structure evolution in dilute carbide Ge1−xCx alloys and implications for device applications (2019) (6)
Hybrid functional study of nonlinear elasticity and internal strain in zinc-blende III-V materials (2018) (6)
Nature of the band gap of Ge:C alloys: insights from hybrid functional density functional theory calculations (2019) (5)
Piezo-force and vibration analysis of ZnO nanowire arrays for sensor application (2016) (5)
Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals (2019) (5)
Influence of N cluster states on band dispersion in GaInNAs quantum wells (2006) (5)
Chapter 7 – VALENCE BAND ENGINEERING IN QUANTUM WELL LASERS (1993) (5)
Multiphysics Model of Encapsulated Piezoelectric-semiconducting Nanowire with Schottky Contacts and External Capacitive Circuit☆ (2015) (5)
Quantum Confined Stark Effect and Permanent Dipole Moment of InAs–GaAs Self‐Assembled Quantum Dots (2000) (5)
Band structure engineering for maximal light-hole behaviour in strained quantum well systems (1987) (5)
Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser (1987) (5)
Theory of the electronic structure of Ga1-yInyNxAs1−x and related alloys (2000) (5)
Influence of auger recombination on the temperature sensitivity of bulk and strained quantum well 1.3-μm semiconductor lasers (1996) (5)
Two-colour fabry-perot laser with terahertz primary mode spacing (2007) (5)
Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and k · p Models (2013) (5)
Atomistic analysis of localisation and band mixing effects in Gel-ϰC,Sn)ϰ group-IV alloys (2018) (5)
Built‐in field control in nitride nanostructures operating in the UV (2012) (5)
Refractive index dynamics of InAs/GaAs quantum dots (2013) (5)
Direct observation of spontaneous polarization induced electron charge transfer in stressed ZnO nanorods (2018) (5)
Dilute nitride and related mismatched semiconductor alloys (2004) (5)
Theory of Piezoelectric Fields in InGaAs Site-Controlled Quantum Dots (2010) (4)
Dilute Bismide Alloys (2017) (4)
Transition from radiative to nonradiative recombination in 1.3-/spl mu/m and 1.5-/spl mu/m InGaAs(P) multiple quantum well semiconductor diode lasers (1998) (4)
A theoretical study of defects in amorphous group-V semiconductors (1981) (4)
Finite element modeling of ZnO nanowire with different configurations of electrodes connected to external capacitive circuit for pressure sensing applications (2015) (4)
First principles analysis of electronic structure evolution and the indirect- to direct-gap transition in Ge$_{1-x}$Pb$_{x}$ group-IV alloys (2019) (4)
Self-consistent Green's function method for dilute nitride conduction band structure (2014) (4)
Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range (2018) (4)
An experimental and theoretical analysis of the influence of compressive strain on 1.5 /spl mu/m quantum well lasers (1992) (4)
Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells (2003) (4)
Microscopic modeling of GalnNAs semiconductor lasers (2001) (4)
Interconnection between ground state and excited state gain in InAs/GaAs quantum dot semiconductor optical amplifiers (2009) (4)
Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions (2013) (4)
Ground state switching in InGaN/GaN quantum dot molecules (2012) (4)
Effect of alloy fluctuations on the local polarization in nitride nanostructures (2012) (4)
Theoretical analysis of influence of random alloy fluctuations on the optoelectronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots (2016) (4)
Numerical study of near-optimal parameters of polymeric encapsulation layer containing a periodic array of piezoelectric nanowires used for force sensing (2016) (4)
Improved performance in tensile-strained long wavelength lasers (1992) (4)
Stochastic resonance in photonic crystal growth (2007) (3)
Three-dimensional Self-assembled Columnar Arrays of AlInP Quantum Wires for Polarized Micron-sized Amber Light Emitting Diodes (2018) (3)
Phonons in AlxGa1−xAs alloys (1985) (3)
Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures (2014) (3)
Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles (2021) (3)
Resonant photon-assisted tunneling between independently contacted quantum wells (2003) (3)
Theory of the electronic structure of Ga1-yInyNxAs1-x (2001) (3)
Modal refractive index of 1.3 /spl mu/m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure (2002) (3)
Strained Layers for Optoelectronic Devices (1991) (3)
Finite Element Analysis of Polymer-encapsulated ZnO Nanowire-based Sensor Array Intended for Pressure Sensing in Biometric Applications☆ (2016) (3)
Hydrostatic pressure experiments on dilute nitride alloys (2007) (3)
Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models (2012) (3)
Comparative analysis of electronic structure evolution in Ge1-xSnx and Ge1−xPbx alloys (2019) (3)
The nature of the band gap of GeSn alloys (2018) (3)
Mid-infrared light-emitting diodes (2019) (3)
Design guidelines for edge‐coupled waveguide unitravelling carrier photodiodes with improved bandwidth (2019) (3)
Theoretical and experimental analysis of InAs/InP quantum dash lasers (2008) (3)
Modelling and direct measurement of the density of states in GaAsN (2011) (3)
Design of columnar quantum dots for polarization-independent emission using 8–band k·p method (2010) (3)
Alloy scattering of n-type carriers in GaN x As (2006) (3)
Strained Layer Lasers and Avalanche Photodetectors (1991) (2)
Chapter 2 – Strained Layer Quantum Well Lasers (1999) (2)
Optimized active region design for high speed 850 nm VCSELs (2009) (2)
Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes (2018) (2)
Enhanced pressure response in ZnO nanorods due to spontaneous polarization charge (2015) (2)
High-speed 850-nm VCSELs for 40-Gb/s transmission (2010) (2)
Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers (2002) (2)
Origin of non-linear piezoelectricity in III-V semiconductors : Internal strain and bond ionicity from hybrid-functional density functional theory (2018) (2)
A theoretical study of defects in amorphous arsenic (1981) (2)
Erratum: Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides (Physical Review B 86, 099901 (2012) (2012) (2)
Theory of electron confinement and electron effective mass in dilute nitride alloys and heterostructures (2004) (2)
Negative intersubband absorption in biased tunnel-coupled wells (2003) (2)
Semiconductor Band Structure and Related Properties (1996) (2)
Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers (2004) (2)
New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation) (2017) (2)
A ﬂexible, plane-wave based multiband k · p model (2012) (2)
A theoretical analysis of the radiative current and its dependence on pressure in GaInNAs 1.3 /spl mu/m lasers (2001) (2)
Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN (2008) (2)
Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells (2019) (2)
Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures (2020) (2)
The inertial-mass scale for free-charge-carriers in semiconductor heterostructures (2005) (2)
Characterising the degree of polarisation anisotropy in an a-plane GaN film (2010) (2)
GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment (2016) (1)
Bistability of threshold in quantum dash-in-a-well lasers (2014) (1)
Prediction of a large optical bistability in hybrid-cavity surface-emitting lasers (1999) (1)
Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP (2008) (1)
Theoretical analysis of band-to-band tunneling in highly-mismatched semiconductor alloys (2019) (1)
Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers (2002) (1)
Electronic properties of type-II $$\hbox {GaAs}_{1-x} \hbox {Sb}_{x}$$/GaAs quantum rings for applications in intermediate band solar cells (2020) (1)
The temperature dependence of the recombination processes in 1.3 /spl mu/m GaInNAs-based edge emitting lasers (2001) (1)
Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry adapted $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian (2013) (1)
Radiative recombination in InAs-based quantum dot lasers: dependence on carrier density and dot parameters (2005) (1)
Detection of Rabi oscillations in a two-dimensional electron gas under ultrafast intersubband excitation (2004) (1)
Surface and volume photoemission of hot electrons from plasmonic nanoantennas (2014) (1)
VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES (1987) (1)
Analytical Determination of Exciton Energy in GaN/AlN Quantum Dots (2007) (1)
Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers (1998) (1)
Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation) (2017) (1)
Dipole lasing stimulated by nano-antenna (2008) (1)
Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys (2015) (1)
Theoretical Investigation of Anisotropic Gain Mechanisms in InGaAsP-Based 1.5-$\mu$ m Quantum Dash Lasers (2010) (1)
ELECTRONIC PROPERTIES OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOT STRUCTURES AND DEVICES STUDIED BY PHOTOCURRENT SPECTROSCOPY (2000) (1)
Long wavelength strained layer lasers (1988) (1)
Simultaneous Oscillation of Two-Colour Discrete Mode Fabry-Perot Laser Diodes using Non-Periodic Index Patterns (2006) (1)
THz photocurrent through an independently contacted three-level heterostructure (2004) (1)
Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells (2007) (1)
Electrically injected GaAsBi Quantum Well Lasers (2014) (1)
Quantum cascade laser has no role for holes (1994) (1)
Hot electron photoemission from plasmonic nanoparticles: Role of transient absorption in surface mechanism (2014) (1)
Dilute bismides and related alloys (2015) (1)
Electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings for applications in intermediate-band solar cells (2020) (1)
Determination of the influence of Auger recombination on the threshold current of 1.3 /spl mu/m and 1.5 /spl mu/m InGaAs(P) strained-layer lasers and its variation with temperature (1998) (1)
Towards Direct Gap Emission in GeSn and GeC: a Hybrid Functional DFT Analysis (2018) (1)
A flexible, plane-wave-based formulation of continuum elasticity and multiband k·p models (2011) (1)
Nonlinear refractive index and pattern-effects-free cross-phase modulation in quantum dot semiconductor optical amplifiers (2004) (1)
The effect of Auger generated hot-holes on 1.5-/spl mu/m InGaAs(P)-based quantum well semiconductor lasers (2000) (1)
Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers (2016) (1)
Atomistic analysis of band-to-band tunnelling in direct-gap $\mathrm{Ge}_{1-X}\mathrm{Sn}_{x}$ group-IV alloys (2020) (1)
Dilute Nitride Alloys (2017) (1)
Control of reflectivity and stop bands in a Bragg stack with a four-layer period (2009) (1)
Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules (2014) (1)
Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys (2021) (0)
Multi-Scale Electronic Structure Analysis of Direct-Gap Group-IV Alloys: Implications for Device Applications (2019) (0)
NUSOD 2011 Proceedings (2011) (0)
50 years of CMD (2018) (0)
Microscopic theory for interband and intersubband optical responses of quantum well laser media (2004) (0)
Tight Binding Investigation of the Electronic Structure of Novel Semiconductor Alloys ( GaBiP & GaBiAs ) for Optical Devices (2013) (0)
Physics and applications of low-dimensional semiconductor structures (2002) (0)
Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes (2018) (0)
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration (2019) (0)
As quantum wells grown on GaAs for the mid-infrared spectral range (2019) (0)
Use of Inverse-Fourier Design Method for Index-Patterned Laser Design (2021) (0)
Conduction-band universality in GaAs-based systems (1992) (0)
Interplay of strain and chemical ordering in GalnP for enhanced laser characteristics (1994) (0)
Effects of local composition fluctuations in nitride alloys: Piezoelectric and electronic properties (2015) (0)
Raman spectroscopy of group-IV Ge$_{1-x}$Sn$_{x}$ alloys: theory and experiment (2021) (0)
Band structure and defects in bulk semiconductors (2002) (0)
Band structure engineering and its impact on semiconductor laser design and optimisation (2022) (0)
Dynamic of the optical matrix element in type II GaAsSb/GaAs quantum dots for laser applications (2009) (0)
Multi-scale theory and simulation of direct-gap group-IV semiconductor alloys (2020) (0)
Gap solitons in nonlinear spatiotemporal photonic crystals and gratings (2008) (0)
Robust single frequency index-patterned laser design using a Fourier design method (2023) (0)
Multi-Scale Electronic Structure Analysis of Direct-Gap Group-IV Alloys: Implications for Device Applications (2019) (0)
Theory of nonlinear gain due to spectral hole burning in quantum dot lasers and amplifiers (2005) (0)
Pressure dependence of electron scattering by DX centres in GaAs and AlGaAs (1990) (0)
Microscopic theory for the intersubband optical responses of quantum well laser media (2005) (0)
Theory of lateral field electro-absorption modulation in quantum dot heterostructures (2023) (0)
Inverse Scattering Design of Multi-Wavelength Fabry-Pérot Lasers (2006) (0)
Introduction and review of quantum mechanics (2002) (0)
Diamagnetism and paramagnetism (2002) (0)
The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots (2000) (0)
PHOTOLUMINESCENCE UNDER MAGNETIC FIELD AND HYDROSTATIC PRESSURE IN GaAs1-xNx FOR PROBING THE COMPOSITIONAL DEPENDENCE OF CARRIER EFFECTIVE MASS AND GYROMAGNETIC FACTOR (2008) (0)
Novel electronic and optoelectronic properties of GaInNAs and related alloys (2003) (0)
Editorial: Introduction to the Issue on Semiconductor Lasers—Part 2 (2011) (0)
Theory of Electronic Transport in Nanostructures (2012) (0)
An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers (2004) (0)
Self consistent solution of a multi-band k.p Hamiltonian and Poisson's equation using a plane wave expansion method (2005) (0)
Caro, Miguel A.; Schulz, Stefan; "O'Reilly", Eoin P. Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory (2015) (0)
1 9 M ay 2 00 3 Rabi oscillations of 2 D electrons under ultrafast intersubband excitation (2022) (0)
Atomistic analysis of transport properties of InGaN/GaN multi-quantum well (2019) (0)
Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap (2014) (0)
Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure (2002) (0)
Bonding in molecules and solids (2002) (0)
Research data supporting "Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells" (2015) (0)
An Overview of Dilute Nitrides Theory and Properties (2015) (0)
Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors (1991) (0)
Time-resolved dynamics in single InGaN quantum dots (Invited Paper) (2005) (0)
Ferromagnetism and magnetic order (2002) (0)
Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells (2000) (0)
GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering (1994) (0)
Theory of the band structure of pentacene organic crystals (2003) (0)
Electronic properties of site-controlled (111)-oriented zinc-blende quantum dots calculated using a symmetry adapted k*p Hamiltonian (2013) (0)
Title Complex emission dynamics of type-II GaSb / GaAs quantum dots (2018) (0)
Microscopic theory for the intersubband optical response of strained quantum well laser media (2005) (0)
AlGaInP quantum well based 610 nm metamorphic LEDs as efficient red light emitters (2017) (0)
Vibrating-bar depth gauge (1989) (0)
Bismide Semiconductors: Revolutionising Telecom Lasers (2015) (0)
Band Structure of InSbN and GaSbN (2008) (0)
Observation of reduced non-radiative recombination current in 1.3-/spl mu/m AlGaInAs/InP multiple-quantum-well lasers (1998) (0)
(Al)InGaAs metamorphic quantum well lasers (2019) (0)
Introduction to the Issue on Semiconductor Lasers—Part 1 (2011) (0)
Two color phase transients of 1.3 µm InAs/GaAs quantum dot SOAs (2010) (0)
Injection driven chaotic dynamics of a two-colour Fabry-Perot laser diode (2007) (0)
New Nanoplasmonic Photovoltaics Based on Enhanced Photoemission from Plasmonic Nanoantennas (2013) (0)
Efficient multi-band k•p calculations of superlattice electronic and optical properties using plane waves (2021) (0)
THEORY OF DILUTE BISMIDE ALLOYS FOR HIGH EFFICIENCY, UNCOOLED TELECOMM LASERS (2013) (0)
Gain in 1320-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers (2000) (0)
Calculation of temperature dependence of electron mobility in dilute nitride alloys (2004) (0)
Electronic Band Structure (2017) (0)
Band structure of solids (2002) (0)
Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells (2005) (0)
Understanding the impact of disorder effects in GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and heterostructures (2017) (0)
Calculation of Auger recombination in long-wavelength lasers (1997) (0)
Self-pulsation at 480 GHz from a two-color discrete mode laser diode (2006) (0)
Theoretical And Experimental Investigation Of Biexcitons And Charged Excitons In InGaN Single Quantum Dots (2005) (0)
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio (2007) (0)
Theory Of Electron Effective Mass And Mobility in Dilute Nitride Alloys (2005) (0)
Built-In Electric Fields and Electronic Structure of GaN/AlN QDs (2000) (0)
InSb based mid-IR light emitting diodes and lasers (1999) (0)
Analysis of InAs/InP quantum dash lasers (2008) (0)
Two-color lasing and four-wave mixing in discrete mode Fabry-Pérot laser diodes (2006) (0)
An investigation of differences in electron and hole confinement in InAs/InGaAsP quantum dash lasers (2008) (0)
Electronic Structure of GaN Quantum Dots with an Adjacent Threading Dislocation (2000) (0)
The temperature and pressure dependence of 1.3 /spl mu/m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) (2002) (0)
NOTES ON EXPERIMENTS: Ultrasound speedometer (1989) (0)
Dilute bismide / dilute nitride type ii quantum wells: Novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics (2017) (0)
Influence of Auger and LO-phonon scattering on bulk and 'quasi'-quantum wire mid-IR laser diodes (1998) (0)
Strain dependence of the threshold current in quantum well lasers (1993) (0)
Dynamics and Linewidth Enhancement Factor in Long Wavelength Strained Layer Lasers (1989) (0)
Record Narrow Excitonic Peak Linewidth of Novel Site Controlled Quantum Dots: Growth and Physics (2010) (0)
Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers (2016) (0)
New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics (1994) (0)
Difference-harmonic generation in quantum dots (2003) (0)
O ct 2 01 3 Composition dependent band gap and band edge bowing in AlInN : A combined theoretical and experimental study (2021) (0)
Strain-balanced type-II superlattices on GaAs: Novel heterostructures for photonics and photovoltaics (2017) (0)
Use of the Fourier method for robust single-frequency index-patterned laser design (2023) (0)

This paper list is powered by the following services:

What Schools Are Affiliated With Eoin P. O’reilly?

Eoin P. O’reilly is affiliated with the following schools:

University of Surrey