Erik Janzén

Q: What Schools Are Affiliated With Erik Janzén

Erik Janzén is affiliated with the following schools: Uppsala University, University of Iceland, Linköping University

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Erik Janzén

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Electrical Engineering

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#1630

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Applied Physics

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Erik Janzén's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Isolated electron spins in silicon carbide with millisecond coherence times. (2014) (341)
Deep level defects in electron-irradiated 4H SiC epitaxial layers (1997) (270)
Deep levels created by low energy electron irradiation in 4H-SiC (2004) (252)
Accurate defect levels obtained from the HSE06 range-separated hybrid functional (2010) (210)
Negative-U system of carbon vacancy in 4H-SiC. (2012) (186)
Silicon vacancy related defect in 4H and 6H SiC (2000) (181)
High-resolution studies of sulfur- and selenium-related donor centers in silicon (1984) (174)
Electronic structure of the GaAs:MnGa center (1997) (163)
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes (2000) (156)
Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor (2003) (151)
Theory of spin-conserving excitation of the N-V(-) center in diamond. (2009) (145)
Divacancy in 4H-SiC. (2006) (136)
Photoluminescence studies of porous silicon carbide (1995) (129)
NEGATIVE-U CENTERS IN 4H SILICON CARBIDE (1998) (124)
Growth of SiC by Hot-Wall CVD and HTCVD (1997) (121)
Scalable quantum photonics with single color centers in silicon carbide (2016) (116)
Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching (1996) (110)
High temperature chemical vapor deposition of SiC (1996) (110)
A 4.5 kV 6H silicon carbide rectifier (1995) (109)
In situ substrate preparation for high-quality SiC chemical vapour deposition (1997) (106)
Electron effective masses in 4H SiC (1995) (103)
Luminescence from stacking faults in 4H SiC (2001) (98)
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors (2010) (97)
Electrical properties and formation mechanism of porous silicon carbide (1994) (93)
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC (2001) (91)
Tellurium donors in silicon (1981) (91)
Dislocation-evolution in 4H-SiC epitaxial layers (2002) (90)
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices (2006) (89)
Chloride-based CVD growth of silicon carbide for electronic applications. (2012) (88)
Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers (2002) (87)
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC (1996) (85)
Aggregation of carbon interstitials in silicon carbide: A theoretical study (2003) (84)
Properties and origins of different stacking faults that cause degradation in SiC PiN diodes (2004) (82)
Carbon vacancy-related defect in 4H and 6H SiC (2001) (81)
Pseudodonor nature of the DI defect in 4H-SiC (2001) (80)
Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure (2013) (76)
The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers (1996) (75)
Deep sulfur‐related centers in silicon (1980) (73)
The Silicon Vacancy in SiC (2009) (72)
Growth of 6H and 4H-SiC by sublimation epitaxy (1999) (72)
Fast chemical sensing with metal-insulator silicon carbide structures (1997) (72)
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers (2009) (72)
Nitrogen doping of epitaxial silicon carbide (2002) (71)
A 3 kV Schottky barrier diode in 4H-SiC (1998) (70)
Structural macro-defects in 6H-SiC wafers (1993) (70)
Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots (2014) (69)
High temperature CVD growth of SiC (1999) (69)
Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques (2006) (69)
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) (2007) (67)
Properties of the D 1 bound exciton in 4 H − SiC (1999) (67)
Electronic structure of the neutral silicon vacancy in 4H and 6H SiC (2000) (66)
Identification of the carbon antisite-vacancy pair in 4H-SiC. (2006) (65)
Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes (2002) (65)
Electronic properties of selenium‐doped silicon (1980) (64)
ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL VAPOR DEPOSITION LAYERS (1994) (63)
On-axis homoepitaxial growth on Si-face 4H SiC substrates (2008) (63)
Aluminum doping of epitaxial silicon carbide (2003) (61)
Current status and advances in the growth of SiC (2000) (61)
Effective mass of electron in monolayer graphene: Electron-phonon interaction (2013) (60)
Liquid phase epitaxial growth of SiC (1999) (60)
EPR identification of intrinsic defects in SiC (2008) (59)
Correlation between the antisite pair and the D-I center in SiC (2003) (59)
Layer-number determination in graphene on SiC by reflectance mapping (2014) (59)
Defects in High-Purity Semi-Insulating SiC (2004) (58)
PHOTOLUMINESCENCE OF ELECTRON-IRRADIATED 4H-SIC (1999) (58)
Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC (2002) (55)
SiC Crystal Growth by HTCVD (2004) (55)
Single excitons in InGaN quantum dots on GaN pyramid arrays. (2011) (55)
Polytype stability in seeded sublimation growth of 4H}SiC boules (2000) (54)
Defects and carrier compensation in semi-insulating 4H-SiC substrates (2007) (54)
Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature (2002) (53)
Structural improvement in sublimation epitaxy of 4H–SiC (2000) (50)
Doping-induced strain in N-doped 4H-SiC crystals (2003) (50)
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer (2015) (50)
Capture cross sections of electron irradiation induced defects in 6H–SiC (1998) (50)
Time Resolved Spectroscopy of Defects in SiC (1997) (50)
Investigation on origin of Z[1/2] center in SiC by deep level transient spectroscopy and electron paramagnetic resonance (2013) (50)
Electronic properties of the residual donor in unintentionally doped beta-Ga2O3 (2016) (49)
Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission (2005) (48)
Epitaxial growth of SiC in a chimney CVD reactor (2002) (47)
HTCVD Grown Semi-Insulating SiC Substrates (2003) (47)
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures (2012) (46)
Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition (1995) (45)
Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates (2009) (45)
Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN (2009) (45)
Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure (2015) (44)
A GaN–SiC hybrid material for high-frequency and power electronics (2018) (44)
HIGH QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR DEPOSITION (1995) (44)
Stable and metastable Si negative-U centers in AlGaN and AlN (2014) (43)
Hole effective masses in 4H SiC (2000) (43)
Shallow donor and DX states of Si in AlN (2011) (43)
Optical Characterization of Deep Level Defects in SiC (2005) (42)
Characterisation and Defects in Silicon Carbide (2002) (41)
Identification of the gallium vacancy-oxygen pair defect in GaN (2009) (41)
Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures (2009) (40)
EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC (2004) (40)
Multivalley spin splitting of 1 s states for sulfur, selenium, and tellurium donors in silicon (1982) (40)
Crystalline imperfections in 4H SiC grown with a seeded Lely method (1994) (40)
In-situ surface preparation of nominally on-axis 4H-SiC substrates (2008) (40)
Effect of impurity incorporation on crystallization in AlN sublimation epitaxy (2004) (40)
HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density (2000) (39)
Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures (2012) (39)
A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications (2011) (38)
The mechanism for cubic SiC formation on off-oriented substrates (1997) (38)
Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC (2004) (38)
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material (2016) (37)
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80% (2016) (37)
Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC (2014) (37)
Heat Capacity of 4H‐SiC Determined by Differential Scanning Calorimetry (2000) (36)
Electrical characterization of metastable carbon clusters in SiC - a theoretical Study (2006) (36)
Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 °C by reactive magnetron sputtering (1994) (35)
Improved Ni ohmic contact on n-type 4H-SiC (1997) (35)
Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100) (2014) (35)
Interface chemistry and electric characterisation of nickel metallisation on 6HSiC (1996) (35)
Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition (2009) (35)
Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy (2013) (34)
Linköping University Electronic Press (2012) (34)
AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations (2006) (34)
Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC (1999) (34)
Preferential etching of SiC crystals (1997) (34)
Phonon replicas at the M-point in 4H-SiC: A theoretical and experimental study (1998) (34)
Silicon antisite in 4H SiC. (2001) (34)
Graphene self-switching diodes as zero-bias microwave detectors (2015) (34)
Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit (2015) (34)
Defects in SiC (2003) (33)
Barrier height determination for n-type 4H-SiC schottky contacts made using various metals (1998) (33)
Group-II acceptors in wurtzite AlN: A screened hybrid density functional study (2010) (32)
Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids (2012) (32)
Negative-U carbon vacancy in 4H-SiC : Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site (2013) (32)
Precursors for carbon doping of GaN in chemical vapor deposition (2015) (32)
Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications (2011) (32)
Growth characteristics of chloride‐based SiC epitaxial growth (2008) (32)
Defects in Semi-Insulating SiC Substrates (2003) (31)
Intrinsic Defects in Silicon Carbide Polytypes (2001) (31)
Observation of negative-U centers in 6H silicon carbide (1999) (31)
Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor (2001) (31)
Material characterization need for SiC-based devices (2001) (30)
Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition (1995) (30)
Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum (2003) (30)
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN (2007) (30)
Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC (2002) (30)
Anisotropic Etching of SiC (2000) (30)
Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD (2009) (30)
Clustering of vacancy defects in high-purity semi-insulating SiC (2006) (30)
High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0001) via platinum intercalation (2014) (29)
The material quality of CVD-grown SiC using different carbon precursors (1998) (29)
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments (2000) (29)
Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide (1996) (29)
Electrical Activity of Residual Boron in Silicon Carbide (2002) (29)
Time‐resolved decay of the blue emission in porous silicon (1994) (29)
The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (1997) (28)
Thickness determination of low doped SiC epi-films on highly doped SiC substrates (1998) (28)
Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results (2015) (28)
SiC material for high-power applications (1997) (28)
Interfacial Properties in Liquid Phase Growth of SiC (1999) (28)
Capture, emission and recombination at a deep level via an excited state (1980) (27)
Dominant recombination center in electron‐irradiated 3C SiC (1996) (27)
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition (2003) (27)
Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC (2006) (27)
Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power (2015) (27)
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes (2000) (27)
Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates (2013) (27)
Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers (2002) (27)
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN (2013) (26)
Asymmetric split-vacancy defects in SiC polytypes: a combined theoretical and electron spin resonance study. (2011) (26)
Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC (1999) (26)
The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique (2006) (26)
OPTICALLY DETECTED MAGNETIC RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS (1997) (26)
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures (2007) (25)
Micropipe Healing in Liquid Phase Epitaxial Growth of SiC (2000) (25)
Theory of Neutral Divacancy in SiC: A Defect for Spintronics (2010) (25)
SiC – a semiconductor for high-power, high-temperature and high-frequency devices (1994) (25)
Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC (1994) (25)
Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor (2002) (25)
High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors (2010) (24)
Carbon-vacancy related defects in 4H- and 6H-SiC (1999) (23)
Rolling performance of carbon nitride-coated bearing components in different lubrication regimes (2017) (23)
A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNx thin film growth with different inert gases (2016) (23)
Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC (2004) (23)
Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS) (2008) (23)
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD (2008) (23)
Mg‐doped Al0.85Ga0.15N layers grown by hot‐wall MOCVD with low resistivity at room temperature (2010) (23)
A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC (2013) (23)
Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface (2015) (23)
InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids (2012) (23)
Deep levels in iron doped n- and p-type 4H-SiC (2011) (22)
Diffusion of tellurium dopant in silicon (1982) (22)
Possible lifetime‐limiting defect in 6H SiC (1994) (22)
Seeded sublimation growth of 6H and 4H-SiC crystals (1999) (22)
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers (2008) (22)
Growth-related structural defects in seeded sublimation-grown SiC (1997) (21)
Effective Masses in SiC Determined by Cyclotron Resonance Experiments (1997) (21)
Optically detected cyclotron resonance investigations on 4H and 6H SiC : Band-structure and transport properties (2000) (21)
Temperature dependence of the minority carrier lifetime in GaAs/AlGaAs double heterostructures (1995) (21)
Step-bunching in 6H-SiC growth by sublimation epitaxy (1999) (21)
Silicon vacancy related TV2a center in 4H-SiC (2003) (21)
Erratum: Negative-U centers in 4H silicon carbide [Phys. Rev. B 58, R10 119 (1998)] (1999) (21)
Metastable defects in 6H-SiC: experiments and modeling (2002) (20)
Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes (2012) (20)
Prominent defects in semi-insulating SiC substrates (2007) (20)
Ab initio supercell calculations on aluminum-related defects in SiC (2007) (20)
Proton Irradiation Induced Defects in 4H-SiC (2001) (19)
Electronic band structure in hexagonal close-packed Si polytypes (1998) (19)
Chemical identification of deep energy levels in Si:Se (1980) (19)
Intrinsic defects in high-purity SiC (2006) (19)
Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation (1995) (19)
Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers (2015) (19)
Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide (2001) (19)
Shortcomings of CVD modeling of SiC today (2013) (18)
Defect origin and development in sublimation grown SiC boules (1999) (18)
Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC (2011) (18)
Magnetron sputtering of epitaxial ZrB2 thin films on 4H‐SiC(0001) and Si(111) (2014) (18)
Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy (2014) (18)
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate (2011) (18)
Recombination centers in as-grown and electron-irradiated ZnO substrates (2007) (18)
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC (2011) (18)
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy (2002) (18)
Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide (2012) (18)
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC (1997) (17)
Impact of anharmonic effects on the phase stability, thermal transport, and electronic properties of AlN (2016) (17)
Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation (1996) (17)
SiC power device passivation using porous SiC (1995) (17)
Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site (2003) (17)
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD (2004) (17)
Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates (2001) (17)
Growth of silicon carbide: process-related defects (2001) (17)
Cross-sectional cleavages of SiC for evaluation of epitaxial layers (2000) (17)
Theoretical study of small silicon clusters in 4H-SiC (2007) (16)
On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide (2014) (16)
Chloride‐based CVD of 3C‐SiC epitaxial layers on 6H(0001) SiC (2010) (16)
Deep levels in tungsten doped n-type 3C–SiC (2011) (16)
Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process (2016) (16)
Calculation of Hyperfine Constants of Defects in 4H-SiC (2003) (16)
Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering (1996) (16)
Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD (2013) (16)
Diffusion of hydrogen in perfect, p -type doped, and radiation-damaged 4H-SiC (2004) (16)
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers (1997) (16)
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation (2002) (16)
A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride (2016) (16)
Growth and Characterisation of SiC Power Device Material (1997) (16)
Ab Initio Study of Growth Mechanism of 4H-SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3 (2017) (16)
CHARACTERIZATION OF THE MN ACCEPTOR LEVEL IN GAAS (1988) (16)
Determination of Nitrogen Doping Concentration in Doped 4H-SiC Epilayers by Low Temperature Photoluminescence (2005) (16)
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane (1997) (15)
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD (2013) (15)
Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide (2017) (15)
Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC (2012) (15)
Observation of recombination enhanced defect annealing in 4H–SiC (2005) (15)
Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers (1997) (15)
Interfacial reactions and ohmic contact formation in the Ni/Al–6H SiC system (1996) (14)
Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers (2014) (14)
Capacitance transient studies of electron irradiated 4H-SiC (1997) (14)
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC (1997) (14)
Self-diffusion of 12C and 13C in intrinsic 4H-SIC (2004) (14)
Hardness, internal stress and fracture toughness of epitaxial AlxGa1-xAs films (1994) (14)
Carbon‐tuned cathodoluminescence of semi‐insulating GaN (2011) (14)
Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study (2005) (14)
Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO (2013) (14)
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD (1997) (14)
Anisotropy of dissolution and defect revealing on SiC surfaces (1999) (14)
Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth (2010) (14)
Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects (2012) (14)
Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC (2014) (14)
A practical model for estimating the growth rate in sublimation growth of SiC (1999) (14)
SiC epitaxy growth using chloride-based CVD (2012) (14)
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor (2005) (14)
Chloride‐based CVD of 3C‐SiC Epitaxial Layers on On‐axis 6H (0001) SiC Substrates (2010) (13)
Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species (2018) (13)
Donor and double-donor transitions of the carbon vacancy related EH6∕7 deep level in 4H-SiC (2016) (13)
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing (2001) (13)
Defect analysis in Lely-grown 6H SiC (1996) (13)
Defects in 4H silicon carbide (2001) (13)
Hydrogen passivation of nitrogen in SiC (2003) (13)
Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC (2014) (13)
Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC (2006) (13)
Fabrication of beam resonators from hot-wall chemical vapour deposited SiC (2009) (13)
Passivation of p-type dopants in 4H-SiC by hydrogen (2001) (13)
In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth (2002) (13)
High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C – Enriched 4H-SiC (2014) (12)
Electrothermal actuation of silicon carbide ring resonators (2009) (12)
Hole effective masses in 6H-SiC from optically detected cyclotron resonance (2002) (12)
Carrier Removal in Electron Irradiated 4H and 6H SiC (2008) (12)
UD-3 defect in 4H, 6H, and 15R SiC : Electronic structure and phonon coupling (2002) (12)
Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC (2012) (12)
Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect (2016) (12)
A Coupled Finite Element Model for the Sublimation Growth of SiC (1997) (12)
Using N2 as precursor gas in III-nitride CVD growth (2003) (12)
Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations (2002) (12)
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC (2004) (11)
Thermodynamic Considerations of the Role of Hydrogen in Sublimation Growth of Silicon Carbide (1997) (11)
Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC (2004) (11)
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates (2013) (11)
Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC (2007) (11)
Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations (2013) (11)
Hyperfine interaction of the nitrogen donor in 4H-SiC (2004) (11)
2.5 kV ion-implanted p+ n diodes in 6H-SiC (1997) (11)
Defects at nitrogen site in electron-irradiated AlN (2011) (11)
EPR and ENDOR Studies of Shallow Donors in SiC (2010) (11)
Divacancy and Its Identification: Theory (2006) (11)
Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide (1998) (11)
Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties (2013) (10)
SiC and III-Nitride Growth in Hot-Wall CVD Reactor (2005) (10)
600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide (2012) (10)
Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers (1999) (10)
Characterization of a n+3C/n-4H SiC heterojunction diode (2016) (10)
Sublimation epitaxy of AlN on SiC: growth morphology and structural features (2004) (10)
Reducing stress in silicon carbide epitaxial layers (2003) (10)
Electronic Structure of Deep Defects in SiC (2004) (10)
Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC (2003) (10)
Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC (2012) (10)
High Growth Rate of α-SiC by Sublimation Epitaxy (1997) (10)
Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers (2010) (9)
Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies (2015) (9)
EPR and ab initio calculation study on the EI4 center in 4H and 6H-SiC (2010) (9)
Very high epitaxial growth rate of SiC using MTS as chloride-based precursor (2007) (9)
Dicarbon antisite defect in n-type 4H-SiC (2009) (9)
Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport (2013) (9)
Growth of SiC from the liquid phase: wetting and dissolution of SiC (1997) (9)
The influence of growth conditions on carrier lifetime in 4H-SiC epilayers (2013) (9)
Growth and Properties of SiC On-Axis Homoepitaxial Layers (2010) (9)
CVD-Growth of Low-Doped 6H SIC Epitaxial Films (1994) (9)
Deep levels in low‐energy electron‐irradiated 4H‐SiC (2009) (9)
Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy (2002) (9)
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors (2003) (9)
Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates (2015) (9)
Bistable defects in low‐energy electron irradiated n‐type 4H‐SiC (2010) (9)
Nitrogen impurity incorporation behavior in a chimney HTCVD process : pressure and temperature dependence (1999) (9)
The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs (1989) (9)
Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC (1999) (8)
Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation (2012) (8)
Anti-site pair in SiC: a model of the DI center (2003) (8)
Properties of the UD-1 Deep-Level Center in 4H-SiC (2002) (8)
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates (2011) (8)
Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction (2001) (8)
Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC (2012) (8)
Thickness Contour Mapping of SiC Epi-Films on SiC Substrates (1997) (8)
Nature and occurrence of defects in 6H-SiC Lely crystals (2001) (8)
Metastability of a Hydrogen-related Defect in 6H-SiC (2000) (8)
Identification of a Frenkel-pair defect in electron-irradiated 3C SiC (2009) (8)
The charged exciton in an InGaN quantum dot on a GaN pyramid (2013) (8)
Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC (2015) (8)
Negative-U behavior of the Si donor in Al0.77Ga0.23N (2013) (8)
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate (2007) (8)
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates (2013) (8)
Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC (2006) (8)
Publisher's Note: Divacancy in 4H-SiC [Phys. Rev. Lett. 96, 055501 (2006)] (2006) (8)
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor (2016) (8)
Behavior of Micropipes during Growth in 4H-SiC (2002) (8)
Presence of Hydrogen in SiC (2001) (8)
Possibility for the electrical activation of the carbon antisite by hydrogen in SiC (2005) (8)
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique (1997) (8)
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN (2005) (8)
Epitaxial regrowth in surface micromachining of GaAs (1992) (8)
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction (2002) (7)
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC (2006) (7)
Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission (2010) (7)
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers (2000) (7)
Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC (2009) (7)
Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC (2001) (7)
Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy (2016) (7)
Silicon in AlN: shallow donor and DX behaviors (2011) (7)
Single Crystal and Polycrystalline 3C-SiC for MEMS Applications (2009) (7)
Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles (2003) (7)
Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions (2012) (7)
Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates (2020) (7)
Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN (2015) (7)
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates (2006) (7)
On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications (2013) (7)
Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films (2000) (7)
Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers (2010) (7)
Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC (2013) (7)
The Neutral Silicon Vacancy in 6H and 4H SiC (1997) (7)
Growth of 4H-SiC from liquid phase (1997) (7)
Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy (2016) (7)
The origin of a peak in the reststrahlen region of SiC (2012) (7)
Deep luminescent centres in electron-irradiated 6H SiC (1997) (7)
GaAs Low Temperature Fusion Bonding (1994) (7)
Fourier photo‐admittance spectroscopy (1982) (7)
Thermal conductivity of isotopically enriched silicon carbide (2013) (7)
Configuration transformation of metastable defects in 6H-SiC (1999) (7)
The 3838 Å photoluminescence line in 4H-SiC (2003) (7)
Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions (1999) (7)
Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC (2014) (7)
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy (2009) (7)
Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters (2002) (7)
High quality 4H-SiC grown on various substrate orientations (1997) (7)
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum (2000) (7)
Divacancy in 4 H-SiC (2006) (7)
Oxidation-Induced Deep Levels in n - and p -Type 4 H - and 6 H -SiC and Their Influence on Carrier Lifetime (2016) (7)
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition (2009) (6)
Silicon carbide grown by liquid phase epitaxy in microgravity (1998) (6)
Deep levels in hetero‐epitaxial as‐grown 3C‐SiC (2010) (6)
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures (2002) (6)
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy (2002) (6)
POLYTYPE INCLUSIONS AND TRIANGULAR STACKING FAULTS IN 4H-SIC LAYERS GROWN BY SUBLIMATION EPITAXY (1999) (6)
Cathodoluminescence of Defect Regions in SiC Epi-Films (1997) (6)
Investigation of domain evolution in sublimation epitaxy of SiC (1998) (6)
Neutron Irradiation of 4H SiC (2001) (6)
Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС (2018) (6)
The Role of Chlorine during High Growth Rate Epitaxy (2015) (6)
Vacancies and their Complexes with H in SiC (2000) (6)
Origin of orange color in nominally undoped HVPE GaN crystals (2017) (6)
Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs (2012) (6)
Identification of divacancies in 4H-SiC (2006) (6)
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC (2003) (6)
Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates (2011) (6)
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC (2011) (6)
Effective-Mass Theory of Shallow Donors in 4H-SiC (2005) (6)
Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization (2013) (6)
Excitation properties of hydrogen-related photoluminescence in 6H-SiC (2000) (6)
Lateral Enlargement of Silicon Carbide Crystals (2002) (6)
A complex defect related to the carbon vacancy in 4H and 6H SiC (1999) (6)
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD (2003) (6)
Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure (2014) (6)
ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target (2016) (5)
Photoluminescence Study of CVD Layers Highly Doped with Nitrogen (2000) (5)
Zeeman spectroscopy of the D1 bound exciton in 3C–, and 4H–SiC (1999) (5)
Polytype stability and defect reduction in 4H-SiC crystals grown via sublimation technique (1999) (5)
New photoluminescence lines in selenium-doped silicon (1989) (5)
Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes (2003) (5)
Photoluminescence of 4H-SiC: some remarks (1999) (5)
Signature of the Negative Carbon Vacancy-Antisite Complex (2006) (5)
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors (2002) (5)
Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies (1997) (5)
The Carbon Vacancy Pair in 4H and 6H SiC (2000) (5)
Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory (2016) (5)
Structural Defects in Electrically Degraded 4H-SiC PiN Diodes (2002) (5)
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material (2008) (5)
Theoretical Investigation of an Intrinsic Defect in SiC (2002) (5)
Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers (2002) (5)
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC (2006) (5)
Optical properties and Zeeman spectroscopy of niobium in silicon carbide (2015) (5)
Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC (2004) (5)
Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films (1997) (5)
Shallow donor in natural MoS2 (2015) (5)
SiC Substrate effects on electron transport in the epitaxial graphene layer (2014) (5)
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor (2008) (5)
Defects in low-energy electron-irradiated n-type 4H-SiC (2010) (5)
Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth (2013) (5)
Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations (2012) (5)
Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance (2000) (5)
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC (2011) (5)
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy (2002) (5)
High Growth Rate Epitaxy of Thick 4H-SiC Layers (2000) (5)
Microhardness of 6H-SiC epitaxial layers grown by sublimation (1999) (4)
Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements (2014) (4)
Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC (2005) (4)
Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth (2002) (4)
The D1 Exciton in 4H‐SiC (1998) (4)
The Effect of Thermal Gradients on SiC Wafers (2003) (4)
Recombination Enhanced Defect Annealing in 4H-SiC (2005) (4)
Effects of microwave fields on recombination processes in 4H and 6H SiC (1997) (4)
Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC (1997) (4)
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC (2002) (4)
A Theoretical Study on Aluminium-Related Defects in SiC (2007) (4)
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation (2007) (4)
Hydrogen at zinc vacancy of ZnO : an EPR and ESEEM study (2014) (4)
Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density (2002) (4)
Shallow excited states of deep luminescent centers in silicon (1995) (4)
Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques (2002) (4)
Kinetics and morphological stability in sublimation growth of 6H and 4H-SiC epitaxial layers (1999) (4)
Behavior of background impurities in thick 4H-SiC epitaxial layers (2001) (4)
In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates (2015) (4)
Boron-related luminescence in SiC (2003) (4)
Performance of III‐nitride epitaxy in a low V‐to‐III gas‐flow ratio range under nitrogen ambient in a hot‐wall MOCVD system (2005) (4)
Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC (2002) (4)
The localisation of donor electrons in multivalley split 1s states for group V and VI donors in silicon (1982) (4)
Electrical and Optical Properties of GaAs Doped with Li (1992) (4)
Radiation-induced defects in GaN (2010) (4)
Domain misorientation in sublimation grown 4H SiC epitaxial layers (1999) (4)
Electron capture cross-section in copper doped CdS (1980) (4)
Development of an all-SiC neuronal interface device (2016) (4)
Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy (1999) (4)
Photo-admittance spectroscopy (1983) (4)
CVD Growth of 3C-SiC on 4H-SiC Substrate (2012) (4)
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC (2010) (4)
Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide (1997) (4)
The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers (2012) (4)
Large area mapping of the alloy composition of Alx Ga1–x N using infrared reflectivity (2009) (4)
Intrinsic Defects in HPSI 6H-SiC: an EPR Study (2008) (4)
Pseudo-Donors in SiC (2000) (4)
Ab Initio Study of Growth Mechanism of 4 H-SiC : Adsorption and Surface Reaction of C 2 H 2 , C 2 H 4 , CH 4 , and CH 3 (2017) (4)
Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors (2002) (4)
The effect of grain size and phosphorous-doping of polycrystalline 3C–SiC on infrared reflectance spectra (2012) (4)
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects (2005) (4)
High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers (2001) (4)
Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC (2007) (4)
Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations (2019) (4)
Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers (2013) (4)
Time Resolved PL Study of Multi Bound Excitons in 3C SiC (1997) (4)
Chalcogenides in Silicon (1982) (4)
Nitrogen Delta Doping in 4H-SiC Epilayers (2003) (4)
Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance (2008) (4)
Micro-scribes in semi-insulating GaAs studied by cross-sectional transmission electron microscopy (1994) (3)
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers (2007) (3)
Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study (2013) (3)
Titanium Related Luminescence in SiC (2006) (3)
Properties of GaN layers grown on N-face free-standing GaN substrates (2015) (3)
EPR Identification of Defects and Impurities in SiC: To be Decisive (2008) (3)
Investigation of Structural Defects in 4H SiC Wafers (1994) (3)
The role of defects on optical and electrical properties of SiC (2000) (3)
Doping-Related Strain in n-Doped 4H-SiC Crystals (2003) (3)
Chloride-Based SiC Epitaxial Growth (2009) (3)
XPS Study of Ni Layers Deposited on 6H-SiC (1996) (3)
Electronic properties of defects in high‐fluence electron‐irradiated bulk GaN (2016) (3)
Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)] (2018) (3)
Defect mapping in 4H-SiC wafers (1997) (3)
A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates (2013) (3)
Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al (2016) (3)
Superior material properties of AlN on vicinal 4H-SiC (2006) (3)
On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications (2009) (3)
Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC (2013) (3)
Photoluminescence upconversion in 4H–SiC (2002) (3)
Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers (2014) (3)
Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR (2005) (3)
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation (2001) (3)
Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry (2017) (3)
A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD (2007) (3)
Epitaxial Growth of AlN Layers on SiC Substrates in a Hot‐Wall MOCVD System (2003) (3)
Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers (2003) (3)
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles (2012) (3)
Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates (2014) (3)
Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition (2002) (3)
The Influence of Phosphorous and High Temperature Annealing on the Nanostructures of 3C-SiC. (2010) (3)
Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon (1993) (3)
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues (2004) (3)
Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy (2014) (3)
Magnetic characterization of conductance electrons in GaN (2010) (3)
Notes on the plasma resonance peak employed to determine doping in SiC (2015) (3)
Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD (2014) (3)
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates (2003) (3)
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy (2006) (3)
As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC (2001) (3)
Observation of Metastable Defect in Electron Irradiated 6H-SiC (1997) (3)
Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor (2017) (3)
n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon (2016) (3)
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC (2003) (2)
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC (2009) (2)
High temperature optical properties of GaAs/AlGaAs double heterostructures (1995) (2)
Electroluminescence From Implanted and Epitaxially Grown pn-Diodes (2000) (2)
Temperature and doping dependence of the photon recycling effect in GaAs/AlGaAs heterostructures (1995) (2)
Hot‐wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure (2005) (2)
In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates (2006) (2)
Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates (2016) (2)
The Configurational Change of a Metastable S-Cu Defect in Silicon (1993) (2)
Deep-level luminescence at 1.0 eV in 6H SiC (2000) (2)
Phosphorus-related luminescence in SiC (2006) (2)
Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum (2002) (2)
Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC (2014) (2)
Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates (1995) (2)
Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method (2012) (2)
Chloride-based SiC growth on a-axis 4H-SiC substrates (2016) (2)
Vanadium-related Center in 4H Silicon Carbide (2000) (2)
Characterization of semi-insulating SiC (2006) (2)
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers (2003) (2)
First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application (2014) (2)
Point Defects in SiC (2008) (2)
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC (2003) (2)
A Metastable Selenium-Related Center in Silicon (1993) (2)
Quantitative comparison between Z ( 1 / 2 ) center and carbon vacancy in 4 H-SiC (2014) (2)
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers (2012) (2)
Thick Epilayer for Power Devices (2007) (2)
Observation of Vacancy Clusters in HTCVD Grown SiC (2005) (2)
Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates (2008) (2)
The Deep 0.11eV Manganese Acceptor Level in GaAs (1989) (2)
Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC (2002) (2)
Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate (2014) (2)
Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies (2012) (2)
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates (2012) (2)
Photoluminescence excitation spectra of the free exciton emission in 6H–SiC (1999) (2)
Magnetic resonance studies of defects in electron-irradiated ZnO substrates (2007) (2)
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization (2004) (2)
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC (2010) (2)
Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC (1997) (2)
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions (2002) (2)
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC (2007) (2)
Optical characterization of individual quantum dots (2012) (2)
Magnetic Resonance from a Metastable Sulfur-Pair-Related Complex Defect in Silicon (1992) (2)
Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC (2003) (2)
Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon (2016) (2)
Dynamics of the Nitrogen Bound Excitons in 6H and 3C SiC (1994) (2)
Magnetic Resonance of Large-area Semi-insulating SiC Substrates (2003) (2)
Photoluminescence of 8H-SiC (2013) (1)
Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC (1999) (1)
A spectroscopic study of a metastable defect in silicon (1991) (1)
Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy (2012) (1)
Deep levels in 4H-SiC layers grown by sublimation epitaxy (2003) (1)
Trapped carrier electroluminescence (TraCE)—A novel method for correlating electrical and optical measurements (2001) (1)
Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films (2004) (1)
Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC (2004) (1)
Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers (2016) (1)
Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy (2001) (1)
Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices (2016) (1)
Electroluminescence from 4H-SiC Schottky Diodes (2000) (1)
Correction: Graphene self-switching diodes as zero-bias microwave detectors (vol 106, 093116, 2015) (2015) (1)
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation (2003) (1)
Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates (2014) (1)
Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region (2014) (1)
Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density (2000) (1)
A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy (1997) (1)
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation (1997) (1)
Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC (2008) (1)
The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC (2008) (1)
Electronic Structure of the UD3 Defect in 4H- and 6H-SiC (2002) (1)
Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers (1997) (1)
Bound Exciton Recombination in Electron Irradiated 4H-SiC (1997) (1)
AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications (2009) (1)
3Exciton and Defect Photoluminescence from SiC (2003) (1)
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC (2004) (1)
SIC epitaxial growth on large area substrates : history and evolution (2012) (1)
Photoluminescence of Phosphorous Doped SiC (2006) (1)
Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure (2002) (1)
Stress related morphological defects in SiC epitaxial layers (2001) (1)
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation (2012) (1)
Improved SiC Epitaxial Material for Bipolar Applications (2008) (1)
Some aspects of extended defects formation and their reduction in silicon carbide crystals (2003) (1)
Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates (2001) (1)
Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC (2009) (1)
Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS (2014) (1)
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum (2003) (1)
High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers (2005) (1)
The Carbon Vacancy Related EI4 Defect in 4H-SiC (2010) (1)
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances (2011) (1)
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate (2008) (1)
Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC (2014) (1)
Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance (2002) (1)
Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling (2014) (1)
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress (1997) (1)
Coherent control of single spins in silicon carbide at ambient condition (2014) (1)
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations (2001) (1)
From risky to safer home care : health care assistants striving to overcome a lack of training , supervision , and support (2014) (1)
Electron paramagnetic resonance study of the HEI 4 / SI 5 center in 4 H-SiC (2006) (1)
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs (2003) (1)
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates (2009) (1)
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations (2000) (1)
Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition (1997) (1)
Shallow P Donors in 3C-, 4H- and 6H-SiC (2006) (1)
Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals (2005) (1)
Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates (2013) (1)
Fano resonances in sulfur, selenium and tellurium doped silicon (1983) (1)
Time-resolved photoluminescence properties of AlGaN / AlN / GaN high electron mobility transistor structures grown on 4 H-SiC substrate (2009) (0)
Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC (2000) (0)
Ga Bound Excitons in 6H-SiC (1995) (0)
Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer (2016) (0)
Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions (1998) (0)
Structure of SiC layers grown by LPE in microgravity and on-ground conditions (1999) (0)
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers (2003) (0)
Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition (2000) (0)
Epitaxial Growth and Characterization of 4H-SiC Layers (特集 SiCの現状と今後の展開) (2013) (0)
Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition (1998) (0)
Influence of gate position on dispersion characteristics of GaN HEMTs (2008) (0)
Irradiation Induced Carrier Loss in 4H and 6H SiC (2006) (0)
Magneto-optical spectroscopy of defects in wide bandgap semiconductors: GaN and SiC (2000) (0)
Optical Nuclear Spin Polarization of Divacancies in SiC (2016) (0)
Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC (2013) (0)
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A. (2001) (0)
Negative-U behavior of the Si donor in Al 0 . 77 Ga 0 . 23 N (2014) (0)
High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD (2007) (0)
Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC (2009) (0)
The Dynamics of Charged and Neutral Excitons in an InGaN Quantum Dot on a GaN Pyramid (2013) (0)
Silicon carbide : A semiconductor for power devices (1998) (0)
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC (2012) (0)
7th European Conferenceon Silicon Carbide and Related Materials (2008) (0)
Optical identification of intrinsic nearest-neighbor defects in SiC (2015) (0)
Unexpected behavior of InGaN quantum dot emission energy located at apices of hexagonal GaN pyramids (2012) (0)
Controlled Growth of ZnO Nanowires on Graphene surface (2012) (0)
Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC (2008) (0)
Material aspects on SiC (2005) (0)
H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate (2006) (0)
Growth and characterisation of SiC epilayers (2012) (0)
Electron and hole capture cross sections of deep levels accessible by DLTS and MCTS in p-type 4H-SiC (2015) (0)
Photoluminescence of 8 H-SiC (2013) (0)
Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays (2013) (0)
Intentionally carbon doped GaN buffer layer for HEMT application: growth and device results (2015) (0)
Electron paramagnetic resonance and theoretical studies of Nb in 4 Hand 6 H-SiC (2013) (0)
Considerations on the Crystal Morphology in the Sublimation Growth of SiC (2000) (0)
High growth rate epitaxy of 4H-SiC layers with improved crystal quality (2000) (0)
Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry (2017) (0)
Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers (2013) (0)
7th European Conference on Silicon Carbide and Related Materials 2008 (2008) (0)
High resistance silicon carbide single crystal and method for its preparation (2001) (0)
The EI4 EPR centre in 6H SiC (2010) (0)
Epitaxial Growth and Characterization of 4H-SiC Layers( )Opening Up a New World of Crystal Growth on SiC) (2013) (0)
First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC (2016) (0)
Effect of process parameters on dislocation density in thick 4 H-SiC epitaxial layers grown by chloride-based CVD on 4 degrees off-axis substrates (2014) (0)
The influence of growth temperature on CVD grown graphene on SiC (2015) (0)
CVD growth of 3 CSiC on 4 H-SiC substrate (2012) (0)
Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations (2014) (0)
Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD (2000) (0)
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers (2003) (0)
Highly Uniform Hot-Wall MOCVD Growth of High-Quality AlGaN/GaN HEMT-Structures on 100 mm Semi-Insulating 4H-SiC Substrates (2007) (0)
The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy (1992) (0)
Thermal behavior of irradiation-induced-deep levels in bulk GaN (2015) (0)
Polarization-controlled photon emission from site-controlled InGaN quantum dots (2012) (0)
Epitaxial growth and characterisation of 4H-SiC layers (2013) (0)
Silicon Carbide — The power device for the future (2012) (0)
Phonon energies at the M-point in 4H-SiC (1996) (0)
EPR characterization of defects in SiC (2007) (0)
Hot-wall MOCVD growth and characterization of III-nitrides for HEMT application (2006) (0)
Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots (2013) (0)
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC (2006) (0)
Silicon antisite related defects in electron-irradiated p-type 4H- and 6H-SiC (2010) (0)
Resonant ionization of shallow donors in electric field (2014) (0)
A defect center for quantum computing : Mo in SiC (2015) (0)
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC (2013) (0)
Structural study of Lely grown 6H SiC (1996) (0)
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC (2009) (0)
Donor doping calibration in 4H-SiC using photoluminescence spectroscopy (1996) (0)
In-situ treatment of GaN epilayers in hot-wall MOCVD (2007) (0)
Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces (2000) (0)
Influence of gravity on defect formation in homoepitaxial layers of SiC grown by sublimation (2001) (0)
Switching performance for fabricated and simulated 4H-SiC high power bipolar transistors (2001) (0)
Divacancy and its identification (2006) (0)
High temperature furnace for liquid phase epitaxy of silicon carbide in microgravity 1 1 Based on pa (1999) (0)
SiC materials aspects (2004) (0)
Electron irradiation of 4H SiC by TEM : An optical study (2000) (0)
Electronic Defects in Electron-Irradiated Silicon Carbide and III-Nitrides (2014) (0)
Characterization of GaN/SiC Epilayers by Picosecond Four-Wave Mixing Technique (2004) (0)
Power Schottky rectifiers and microwave transistors in 4H-SiC (2000) (0)
Defect evolution in SiC sublimation epitaxy layers grown on LPE buffers with reduced micropipe density (2000) (0)
Performance of SiC Microwave Transistors in Power Amplifiers (2008) (0)
Materials aspects on SiC (2004) (0)
High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ( SiC )-Si-28C-12 , Natural and C13-Enriched 4 H-SIC (2013) (0)
New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC (2008) (0)
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques (2006) (0)
Method with a masking step for the production of a semiconductor device with a SiC semiconductor layer (1996) (0)
Carrier lifetime in p- and n-type 4H-SiC (2015) (0)
Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide (2013) (0)
Microhardness depth profiles of Si/SiC multi-layered structures prepared by chemical vapor deposition (2001) (0)
Apparatus and method for producing single crystals by vapor phase deposition (2004) (0)
AlGaN/GaN epitaxial growth on SiC in a hot-wall MOCVD system (2004) (0)
Shallow boron, the deep D-center and their influence on carrier lifetime in n- and p-type 4H-SiC (2015) (0)
Structural properties of 6H-SiC epilayers grown by two different techniques (1997) (0)
Hot-wall MOCVD developments towards 2 inch AlGaN/GaN epitaxial growth (2006) (0)
Growth optimization of AlGaN/GaN HEMT structure on 100 mm SiC substrate : Utilizing bottom-to-top approach (2015) (0)
Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor (2011) (0)
Electronic Structure of Two Sulphur-Related Bound Excitions in Silicon Studied by Optical Detection of Magnetic Resonance (1989) (0)
Properties of the bound excitons associated to the 3838 angstrom line in 4H-SiC and the 4182 angstrom line in 6H-SiC (2004) (0)
Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates (1997) (0)
Predictions of Nitrogen Doping in SiC Epitaxial Layers (2003) (0)
Influence of Growth Temperature on Carrier Lifetime in 4 H-SiC Epilayers (2013) (0)
Electron paramagnetic resonance studies of carbon interstitial related defects in 4H-SiC (2015) (0)
Optical Studies of Deep Centers in Semi-Insulating SiC (2006) (0)
Asymmetric split-vacancy defects in 4H and 6H Silicon Carbide (2011) (0)
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC (2004) (0)
Method and device for epitaxial growth using CVD (1996) (0)
Title : Clustering of vacancy defects in high-purity semi-insulating SiC Year : 2007 Version : Final (2015) (0)
SiC Crystal Growth and Characterization (2000) (0)
Optical properties of AlGaN/GaN epitaxial layers grown on free-standing Ga-face and N-face GaN substrates (2015) (0)
Identification of the Di-Carbon Antisite Defect in n-type 4H-SiC (2009) (0)
Optical characterization of InGaN quantum dots on GaN pyramids grown by MOCVD (2010) (0)
The electronic structure of sulfur, selenium and tellurium donors in silicon (1981) (0)
Important role of shallow impurities in carrier recombination in SiC (1995) (0)
Photoluminescence Up-Conversion Processes in SiC (2003) (0)
Effect of High Temperature Annealing on Surface and Bulk Characteristics of 4H-SiC (2001) (0)
Capture cross section of electron-irradiation-induced defects in bulk GaN grown by halide vapor phase epitaxy (2014) (0)
Impurity concentration determination in 6H-SiC (1995) (0)
Shallow P donors in 3 C-, 4 H-, and 6 H-SiC (2006) (0)
Optical properties of aluminium and nitrogen in compensated 4H-SiC epitaxial layers (2000) (0)
Three-dimensional LED structures in GaAs for high-efficient light emission (1988) (0)
Effective-Mass-Like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon (1993) (0)
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide (2007) (0)
Bipolar Diode on 4H-SiC P+-Substrate (2009) (0)
Epitaxial growth on on-axis substrates (2012) (0)
Properties of the neutral silicon vacancy in 6H SiC (1999) (0)
Highly Si-doped Al0.72Ga0.28N layers: n-type conductivity bound by the process temperature (2014) (0)
Impact of AlGaN/GaN interface sharpness on HEMT performance (2015) (0)
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC (2012) (0)

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