Eugene Fitzgerald

Eugene Fitzgerald's AcademicInfluence.com Rankings

Eugene Fitzgerald

Chemistry

#3099

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#4087

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Nanotechnology

#96

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#96

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chemistry Degrees

Eugene Fitzgerald

Engineering

#4585

World Rank

#5787

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Photonics

#36

World Rank

#36

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engineering Degrees

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Chemistry
Engineering

Why Is Eugene Fitzgerald Influential?

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According to Wikipedia, Eugene A. Fitzgerald is an American materials scientist and engineer currently the Merton C. Flemings-SMA Professor of Materials Science and Engineering at Massachusetts Institute of Technology.

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Eugene Fitzgerald's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors (2005) (861)
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates (1991) (635)
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing (1998) (517)
Dislocations in strained-layer epitaxy : theory, experiment, and applications (1991) (495)
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si (1992) (479)
Coherent Phonon Heat Conduction in Superlattices (2012) (452)
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon (1991) (372)
Remote epitaxy through graphene enables two-dimensional material-based layer transfer (2017) (327)
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area (1989) (291)
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers (2003) (271)
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates (2001) (247)
Luminescence and structural study of porous silicon films (1992) (246)
Strained silicon MOSFET technology (2002) (240)
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy (1991) (236)
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates (2001) (217)
High quality Ge on Si by epitaxial necking (2000) (201)
Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures (1997) (176)
Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy (1993) (172)
Surface morphology of related GexSi1−x films (1992) (164)
High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers (1998) (163)
Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors (2002) (161)
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates (2000) (151)
Structure and recombination in InGaAs/GaAs heterostructures (1988) (150)
Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates (2001) (149)
MICROSTRUCTURE OF ERBIUM-IMPLANTED SI (1991) (146)
Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator- semiconductor structure (2002) (129)
Dislocation dynamics in relaxed graded composition semiconductors (1999) (129)
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques (2004) (127)
Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage (2006) (126)
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers (2002) (125)
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates (2003) (118)
The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures (1989) (117)
The electrical and defect properties of erbium‐implanted silicon (1991) (115)
Low-threshold optically pumped lasing in highly strained germanium nanowires (2017) (114)
Relaxed template for fabricating regularly distributed quantum dot arrays (1997) (113)
Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates (2005) (111)
Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition (2008) (111)
Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x (2001) (107)
Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion (1998) (105)
Evaluation of erbium‐doped silicon for optoelectronic applications (1991) (98)
Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates (2000) (96)
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation (2007) (95)
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates (2004) (90)
The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis (2006) (89)
The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis (2006) (89)
Phase-controlled, heterodyne laser-induced transient grating measurements of thermal transport properties in opaque material (2011) (88)
Dislocation glide and blocking kinetics in compositionally graded SiGe/Si (2001) (84)
Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures (1993) (84)
Elimination of interface defects in mismatched epilayers by a reduction in growth area (1988) (81)
Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode (2003) (81)
Investigation of optical properties of nanoporous GaN films (2005) (80)
Influence of strain on semiconductor thin film epitaxy (1997) (76)
Anisotropy of the thermal conductivity in GaAs/AlAs superlattices. (2013) (76)
Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES) (2007) (75)
Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells (2010) (75)
Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis (2006) (74)
High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates (1998) (74)
Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy (1999) (72)
Epitaxial necking in GaAs grown on pre-pattemed Si substrates (1991) (72)
Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates (2005) (72)
Silicon-Based Microphotonics and Integrated Optoelectronics (1998) (72)
Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si (1993) (71)
Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) (2006) (69)
Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates (1998) (69)
Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures (1995) (66)
Dislocations in Relaxed SiGe/Si Heterostructures (1999) (65)
Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates (1997) (65)
Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1−x buffer layers (2003) (63)
Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs (2003) (61)
Growth of single crystal ZnO nanorods on GaN using an aqueous solution method (2005) (60)
Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements (2005) (60)
Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors (2003) (59)
Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x (2003) (58)
Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template (2007) (57)
Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy (2006) (57)
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching (2005) (56)
High-quality metamorphic compositionally graded InGaAs buffers (2010) (56)
Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure (2002) (55)
Evolution of microstructure and dislocation dynamics in InxGa1−xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials (1999) (55)
Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition (1994) (54)
Monolithic integration of InP-based transistors on Si substrates using MBE (2009) (53)
Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix (2006) (52)
Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing (2002) (52)
Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex (2003) (52)
Optimized strained Si/strained Ge dual-channel heterostructures for high mobility P- and N-MOSFETs (2003) (52)
Relaxed InxGa1−xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs (1998) (51)
Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys (2002) (51)
The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors (2011) (50)
Thermal reaction of nickel and Si0.75Ge0.25 alloy (2002) (49)
Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer (2016) (48)
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber (2013) (48)
Sputtered nickel oxide on vertically-aligned multiwall carbon nanotube arrays for lithium-ion batteries (2014) (48)
Low-threshold optically pumped lasing in highly strained Ge nanowires (2017) (47)
Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer (2014) (46)
Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting (2009) (46)
In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors (2008) (46)
Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance (1987) (45)
Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition (2004) (44)
Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates (2010) (44)
Vertical nanowire InGaAs MOSFETs fabricated by a top-down approach (2013) (42)
Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers (2003) (41)
LETTER TO THE EDITOR: High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth (2004) (41)
Near‐field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−x films (1994) (40)
Elimination of dislocations in heteroepitaxial MBE and RTCVD GexSi1-x grown on patterned Si substrates (1990) (38)
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient (2015) (38)
Synthesis and optical properties of well aligned ZnO nanorods on GaN by hydrothermal synthesis (2006) (37)
Multilayer antireflection coating design for GaAs0.69P0.31/Si dual-junction solar cells (2015) (37)
Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice (2012) (37)
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell (2011) (37)
Minority‐ and majority‐carrier trapping in strain‐relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical‐vapor deposition (1995) (37)
A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates (2009) (36)
Electrochemically controlled transport of lithium through ultrathin SiO 2 (2005) (36)
ZnO coaxial nanorod Homojunction UV light-emitting diodes prepared by aqueous solution method. (2012) (36)
Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases (1988) (36)
Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs (2011) (36)
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process (2016) (35)
SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition (1992) (35)
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates (2008) (35)
Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth (2007) (35)
Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy (2006) (34)
Strain relaxation in graded InGaN'GaN epilayers grown on sapphire (2003) (34)
From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects (1994) (34)
The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C (2004) (33)
Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H2 pressures (2003) (33)
Origin of charge trapping in germanium nanocrystal embedded SiO2 system: Role of interfacial traps? (2004) (33)
Amber-green light-emitting diodes using order-disorder AlxIn1-xP heterostructures (2013) (33)
Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy (1994) (33)
Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications (2005) (33)
Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (x<y) virtual substrates (2004) (32)
Characterization of compositionally graded Si1−xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging (1993) (32)
Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back (2002) (31)
Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs (2009) (31)
Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes (2014) (31)
Epitaxially stabilized GexSn1−x diamond cubic alloys (1991) (30)
Preparation of novel SiGe-free strained Si on insulator substrates (2002) (30)
Engineered substrates and their future role in microelectronics (2005) (29)
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200 mm GaAs virtual substrate (2015) (29)
Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy (1998) (29)
Fabrication of ultra-thin strained silicon on insulator (2003) (29)
Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices (2006) (29)
Relaxed silicon-germanium on insulator substrate by layer transfer (2001) (29)
Free-standing AlxGa1−xAs heterostructures by gas-phase etching of germanium (2010) (28)
Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix (2006) (28)
A Fully Integrated Class-J GaN MMIC Power Amplifier for 5-GHz WLAN 802.11ax Application (2018) (28)
Epitaxial growth of metastable SnGe alloys (1989) (27)
Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding Ge / Si1 − x Ge x / Si Virtual Substrates (2004) (27)
Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates (2002) (26)
Structural, electronic, and luminescence investigation of strain‐relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures (1996) (26)
Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide (2005) (26)
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs (2004) (25)
Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers (2004) (25)
High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate (2007) (24)
Stability and composition of Ni–germanosilicided Si1−xGex films (2004) (24)
Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates (2009) (24)
Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates (2009) (24)
Deep level defects in proton radiated GaAs grown on metamorphic SiGe∕Si substrates (2006) (23)
High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers (2000) (23)
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates (2013) (23)
High Quality GaN Grown from a Nanoporous GaN Template (2007) (22)
Range of defect morphologies on GaAs grown on offcut (001) Ge substrates (1998) (22)
Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts (2006) (21)
Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence (2013) (21)
Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate (2003) (21)
Microstructure and conductance-slope of InAs/GaSb tunnel diodes (2014) (21)
Sub-10 nm diameter InGaAs vertical nanowire MOSFETs (2017) (21)
Dislocation structure, formation, and minority‐carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (1988) (21)
Integration of III–V materials and Si-CMOS through double layer transfer process (2014) (20)
Alternatives to thick MBE-grown relaxed SiGe buffers (2000) (20)
High quality GaAs qrowth by MBE on Si using GeSi buffers and prospects for space photovoltaics (2000) (20)
Stable cyclic performance of nickel oxide–carbon composite anode for lithium-ion batteries (2014) (20)
Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system (2014) (19)
1×2 optical waveguide filters based on multimode interference for 1.3- and 1.55-μm operation (2002) (19)
Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density (1992) (19)
Low temperature direct wafer bonding of GaAs to Si via plasma activation (2013) (19)
Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition (2012) (19)
Theoretical efficiency limit for a two-terminal multi-junction “step-cell” using detailed balance method (2016) (18)
Correlation of a generation-recombination center with a deep level trap in GaN (2015) (18)
Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates (2014) (18)
Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1−xGex/Si substrate (2009) (18)
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers (2017) (18)
Inside Real Innovation:How the Right Approach Can Move Ideas from R&D to Market — And Get the Economy Moving (2010) (18)
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure (2003) (18)
Strain-Free Ge x Si 1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates (1991) (17)
Effect of Dislocations on VLWIR HgCdTe Photodiodes (2007) (17)
Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching (2007) (17)
Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix (2003) (17)
Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking (2015) (17)
Spontaneous Lateral Phase Separation of AlInP During Thin Film Growth and its Effect on Luminescence (2015) (17)
Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process (2018) (17)
A Highly Efficient Fully Integrated GaN Power Amplifier for 5-GHz WLAN 802.11ac Application (2018) (16)
Fabrication of p‐type ZnO nanorods/n‐GaN film heterojunction ultraviolet light‐emitting diodes by aqueous solution method (2013) (16)
Photoluminescence investigations of graded, totally relaxed GexSi1-x structures (1992) (16)
Studies of electrically active defects in relaxed GeSi films using a near‐field scanning optical microscope (1996) (16)
III-V/Si dual junction solar cell at scale: Manufacturing cost estimates for step-cell based technology (2018) (16)
High quality In0.48Ga0.52P grown by gas source molecular beam epitaxy (1992) (16)
MOCVD growth of GaN on SEMI-spec 200 mm Si (2017) (16)
Misfit dislocation and threading dislocation distributions in InGaAs and GeSi/Si partially relaxed heterostructures (2002) (15)
Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs. (2011) (15)
The Effect of Location on the Structure and Mechanical Properties of Selective Laser Melted 316 L Stainless (2016) (15)
Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates (2002) (15)
Performance of a valved arsenic cracker source for MBE growth (1993) (15)
Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge∕SiGe∕Si substrates (2005) (15)
Ultracompact, multifunctional, and highly integrated 3×2 photonic switches (2004) (15)
Monolithic III-V/Si integration (2008) (15)
High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate (2010) (15)
Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient (2004) (15)
Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy (2008) (15)
Scanning force microscopy studies of GaAs films grown on offcut Ge substrates (1998) (15)
Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature (1991) (14)
Two-dimensional AlGaInP∕GaInP photonic crystal membrane lasers operating in the visible regime at room temperature (2007) (14)
Positive temperature coefficient of impact ionization in strained-Si (2005) (14)
Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut (2013) (14)
Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate (2018) (14)
Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries. (2015) (14)
Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si (1996) (14)
Intelligent integration of optical power splitter with optically switchable cross-connect based on multimode interference principle in SiGe∕Si (2004) (14)
Monolithically integrated thin film III-V/Si solar panel on wafer for active power management (2011) (13)
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers (2021) (13)
Influences of annealing on lithium-ion storage performance of thick germanium film anodes (2015) (13)
Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface (2004) (13)
Growth and characterization of GaAsP top cells for high efficiency III–V/Si tandem PV (2015) (13)
Influences of annealing on lithium-ion storage performance of thick germanium film anodes (2015) (13)
Arrayed Si ∕ SiGe Nanowire and Heterostructure Formations via Au-Assisted Wet Chemical Etching Method (2009) (13)
Unifying first-principles theoretical predictions and experimental measurements of size effects in thermal transport in SiGe alloys (2017) (13)
High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures (2012) (13)
Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1−xGex/Si substrate (2009) (13)
Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe∕Sia) (2006) (13)
Fabrication and characterization of nano‐porous GaN template for strain relaxed GaN growth (2007) (13)
The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures (1988) (13)
Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density (2000) (13)
Multi-junction III-V photovoltaics on lattice-engineered Si substrates (2005) (13)
Mobility enhancement in dual-channel P-MOSFETs (2004) (13)
Suppression of oxidation in nickel germanosilicides by Pt incorporation (2005) (13)
(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design (2016) (13)
Catalyst proximity effects on the growth rate of Si nanowires (2009) (13)
Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate (2008) (13)
Characterization of graded InGaN/GaN epilayers grown on sapphire (2004) (12)
LETTER TO THE EDITOR: Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) (2004) (12)
Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si (1998) (12)
Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces (2007) (12)
Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering (2004) (12)
Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering (1995) (12)
Digital metamorphic alloys (2009) (12)
Gas‐source molecular‐beam epitaxy of InGaP and GaAs on strained‐relaxed GexSi1−x/Si (1993) (12)
Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP (2013) (12)
Theoretical analysis of Si1−x−yGexCy near-infrared photodetectors (2003) (12)
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD (2001) (12)
Enabling the integrated circuits of the future (2015) (12)
Annihilation of threading dislocations in strain relaxed nano‐porous GaN template for high quality GaN growth (2007) (11)
Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate (2014) (11)
Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon (1992) (11)
Highly oriented Ni(Pd)SiGe formation at 400 °C (2005) (11)
Improved hole mobilities and thermal stability in a strained‐Si∕strained‐Si1−yGey∕strained‐Si heterostructure grown on a relaxed Si1−xGex buffer (2005) (11)
Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si (1993) (11)
Molecular beam epitaxy of dysprosium barium cuprous oxides using molecular oxygen (1992) (11)
Influence of Ga vs As prelayers on GaAs/Ge growth morphology (1996) (11)
Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures (2004) (11)
Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications (1997) (11)
Selective electroless copper metallization of palladium silicide on silicon substrates (1991) (10)
InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer (2008) (10)
Fabrication and application of relaxed buffer layers (1995) (10)
Monolithic integration of III-V materials and devices on silicon (1999) (10)
Metamorphic transistors: Building blocks for hetero-integrated circuits (2016) (10)
Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy (2011) (10)
Improved interfacial state density in Al2O3/GaAs interfaces using metal-organic chemical vapor deposition (2010) (10)
Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut (2013) (10)
Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications (2017) (10)
Effects of Dislocation Strain on the Epitaxy of Lattice-Mismatched AlGaInP Layers (2014) (9)
GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain (2018) (9)
Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions (2015) (9)
Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces (2013) (9)
Fabrication of GaAs-on-Insulator via Low Temperature Wafer Bonding and Sacrificial Etching of Ge by XeF2 (2011) (9)
Thermal conductivity of GaAs/Ge nanostructures (2016) (9)
On the mechanism of ion-implanted As diffusion in relaxed SiGe (2004) (9)
AlN-AlN Layer Bonding and Its Thermal Characteristics (2014) (9)
Design Optimization of Single-Layer Antireflective Coating for GaAs$_{{\bf 1-}{\bm x}}$P$_{\bm x}$/Si Tandem Cells With $\hbox{x} = \hbox{0}$, 0.17, 0.29, and 0.37 (2015) (9)
Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface (2010) (9)
Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer (2016) (8)
A Novel 2.6–6.4 GHz Highly Integrated Broadband GaN Power Amplifier (2017) (8)
Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice (2013) (8)
Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer (2018) (8)
Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes (2004) (8)
In search of low-dislocation-density hetero-epitaxial structures (1989) (8)
$\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon (2013) (8)
Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates (2003) (8)
Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition (2007) (8)
Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures (2017) (8)
Impact ionization in strained-Si/SiGe heterostructures (2003) (8)
Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts (2018) (8)
Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers (2013) (8)
Fabrication and Thermal Budget Considerations of Advanced Ge and InP SOLES Substrates (2015) (8)
Epitaxial Growth of Heterovalent GaAs/Ge and Applications in III-V Monolithic Integration on Si Substrates (2006) (7)
Efficient above-band-gap light emission in germanium (2009) (7)
Yellow-green emission for ETS-LEDs and lasers based on a strained-InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer (2002) (7)
High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates (2010) (7)
High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator (2018) (7)
Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs (2017) (7)
Silicon Germanium Epitaxy: A New Material for MEMS (2000) (7)
Direct-gap 2.1–2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers (2016) (7)
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels (2002) (7)
Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces (1995) (7)
Mid-10 cm −2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si (2004) (6)
SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation (2001) (6)
High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS (2017) (6)
Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures (1991) (6)
Heavy p-type carbon doping of MOCVD GaAsP using CBrCl 3 (2016) (6)
A new ultra-hard etch-stop layer for high precision micromachining (1999) (6)
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication (2002) (6)
Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy (2005) (6)
Structural Characterization of P++ Si:B Layers for Bulk Micromachining (1996) (6)
Misfit accommodation at epitaxial interfaces (1991) (6)
Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition (2016) (6)
MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS (2018) (6)
Inside Real Innovation (2010) (6)
Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions (2002) (6)
Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy (1993) (6)
Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate (2009) (6)
The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy (2008) (6)
III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates (2004) (6)
Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding (2006) (5)
Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate (2006) (5)
Channel engineering of SiGe-based heterostructures for high mobility MOSFETs (2001) (5)
Optical activation of Eu ions in nanoporous GaN films (2006) (5)
Process and defect-induced surface morphology of relaxed GexSi1-x films (1993) (5)
ENGINEERING DISLOCATION DYNAMICS IN Inx(AlyGa1-y)1-xP GRADED BUFFERS GROWN ON GaP BY MOVPE (1998) (5)
The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si 0.7 Ge 0.3 (1993) (5)
Control wafer bow of InGaP on 200 mm Si by strain engineering (2017) (5)
Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate (2016) (5)
MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS (2017) (5)
Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate (2009) (5)
III–V/SiGe on Si radiation hard space cells with Voc>2.6V (2015) (5)
Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe (2016) (5)
Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers (2020) (5)
Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III–V LED (2016) (5)
Novel GaAs0.71P0.29/Si tandem step-cell design (2014) (5)
Germanium-on-insulator virtual substrate for InGaP epitaxy (2017) (5)
Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at λ=1.3 μm (1997) (5)
Final results from the MISSE5 GaAs on Si solar cell experiment (2008) (5)
The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots (2008) (5)
Design and fabrication of subwavelength nanogratings based light-emitting diodes (2011) (5)
Monolithic InGaAs-on-silicon shortwave infrared detector arrays (1997) (5)
Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications (2007) (5)
Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials (2013) (5)
Development of Fast Ferrite Tuner for Lower Hybrid current drive (2011) (5)
Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots (2021) (5)
Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates (2016) (5)
Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes (2008) (4)
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering (2005) (4)
Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy (2016) (4)
(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices (2016) (4)
Microelectronically fabricated LiCoO2∕SiO2/polycrystalline-silicon power cells planarized by chemical mechanical polishing (2006) (4)
Spectrum Splitting Micro-Concentrator Assembly for Laterally-arrayed Multi-Junction Photovoltaic Module (2018) (4)
In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations (2018) (4)
Wavelength control and residual oxygen in AlGaAs/InGaAs strained quantum‐well heterostructures grown by molecular beam epitaxy (1992) (4)
Monolithic Integration of III-V optical interconnects on Si using SiGe virtual subtrates (2002) (4)
Spontaneous patterning in high temperature superconducting film by liquid‐gas‐solidification processing (1994) (4)
GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD (2017) (4)
Reduction of Defect Density in Heteroepitaxial Ge x Si 1-x Grown on Patterned Si Substrates (1989) (4)
Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission (2012) (4)
Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures (2015) (4)
Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices (2019) (4)
Theoretical efficiency limits of a 2 terminal dual junction step cell (2015) (4)
Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining (1998) (4)
Oblique Angle Deposition of Germanium Film on Silicon Substrate (2005) (4)
Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer (2018) (4)
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application (2003) (4)
Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications (2015) (4)
Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes (1999) (3)
Integration of 200 mm Si-CMOS and III-V materials through wafer bonding (2017) (3)
Kinetic Monte Carlo simulation of quantum dot growth on stepped substrates (2013) (3)
Progress and challenges in the direct monolithic integration of III–V devices and Si CMOS on silicon substrates (2009) (3)
Columnar Structure Growth by Silicon Molecular Beam Epitaxy (1991) (3)
The Limits of Electromechanical Coupling in Highly-Tensile Strained Germanium. (2020) (3)
A Hybrid Process Design Kit: Towards Integrating CMOS and III-V Devices (2016) (3)
III-V Device Integration on Silicon Via Metamorphic SiGe Substrates (2006) (3)
Relaxed In x .Ga 1−x as Graded Buffers Grown With Organometallic Vapor Phase Epitaxy on GaAs (1997) (3)
Engineered Substrates for Electronic and Optoelectronic Systems (2005) (3)
Toward high performance n/p GaAs solar cells grown on low dislocation density p-type SiGe substrates (2003) (3)
Erratum: “Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] (2006) (3)
Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation (2002) (3)
Monolithic 3D integration in a CMOS process flow (2014) (3)
Effects of valence band tails on the blue and red spectral shifts observed in the temperature‐dependent photoluminescence of InN (2013) (3)
Silicon-Based Epitaxial Films for Mems (1998) (3)
Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium (2010) (3)
ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application (2007) (3)
Direct Growth of III-V Devices on Silicon (2008) (3)
Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices. (2009) (3)
Thermal cycle testing of GaAs on Si and metamorphic tandem on Si solar cells (2005) (3)
RF and Power GaN HEMTs on 200 mm-Diameter 725 μm-Thick p-Si Substrates (2019) (2)
High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step (1997) (2)
Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate (2011) (2)
Strained Ge channel p-type MOSFETs fabricated on Si1-xGex/Si virtual substrates (2001) (2)
GaN device-circuit interaction on RF linear power amplifier designed using the MVSG compact model (2017) (2)
Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates (2010) (2)
Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition (2018) (2)
Temperature- and intensity-dependent photovoltaic measurements to identify dominant recombination pathways (2016) (2)
Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures (2013) (2)
Influence of substrate off-cut on the defect structure in relaxed graded Si-Ge/Si layers (1996) (2)
Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion (2015) (2)
Misfit Dislocation Nucleation Sites and Metastability Enhancement of Selective Si 1−x Ge x /Si Grown by Rapid Thermal Chemical Vapor Deposition (1991) (2)
Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium (2001) (2)
Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A. (1998) (2)
Photo-Attachment of Biomolecules for Miniaturization on Wicking Si-Nanowire Platform (2015) (2)
(Invited) Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates (2010) (2)
Engineering Substrates for 3D Integration of III-V and CMOS (2008) (2)
1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge (2009) (2)
Dislocation engineering in strained mos materials (2005) (2)
Hybrid Process Design Kit: Single-Chip Monolithic III-V/Si Cascode GaN-HEMT (2018) (2)
A driver circuit based on the emerging GaN-on-CMOS process for the emerging Electroluminescent panels (2015) (2)
Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors (2010) (2)
The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In 0.12 Ga 0.88 As/GaAs Heterostructures (1987) (2)
Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES) (2009) (2)
In0.30Ga0.70As QW MOSFETs with peak mobility exceeding 3000 cm2/V·s fabricated on Si substrates (2016) (2)
Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors (2011) (2)
Market-Driven Innovation (2008) (2)
Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter (2019) (1)
Fabrication of germanium-on-insulator (GOI) with improved threading dislocation density (TDD) via buffer-less epitaxy and bonding (2014) (1)
Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching (2006) (1)
High bonding yield and brighter integrated GaN LED and Si-CMOS (2019) (1)
Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer (2005) (1)
High hole and electron mobilities using Strained Si/Strained Ge heterostructures (2004) (1)
Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts (2005) (1)
High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers (2020) (1)
Nanoscale III-V Light Emitting Diode with Antenna-Enhanced 250 Picosecond Spontaneous Emission Lifetime (2018) (1)
MU LTlJ U NCTION Ill-V PHOTOVOLTAICS ON LAITICE-EN GIN E ERED Si SUSTRATES (2005) (1)
III-V/Si Device Integration Via Metamorphic SiGe Substrates (2006) (1)
Materials Integration for III-V/SiGe+CMOS Integrated Circuit Platforms (Invited) (2012) (1)
Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer (2016) (1)
Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si 0.7 Ge 0.3 Grown on Si by Rtcvd (1993) (1)
Controlling Epitaxial GaAsP/SiGe Heterovalent Interfaces (2012) (1)
Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding (2018) (1)
Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS (2017) (1)
The science and applications of relaxed semiconductor alloys on conventional substrates (2003) (1)
Preliminary On-Orbit Performance Data from GaAs on Si Solar Cells Aboard MISSE5 (2006) (1)
CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate (2021) (1)
The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in $\hbox{SiO}_{2}/\hbox{HfO}_{2}$ (2007) (1)
Analysis of double stub tuner control stability in a many element phased array antenna with strong cross-coupling (2014) (1)
InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy (2012) (1)
Startup Companies: Success Due to a “Culture of Self-Delusion” (2007) (1)
GaN LED on Quartz Substrate through Wafer Bonding and Layer Transfer Processes (2018) (1)
Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration (2009) (1)
Strained and Relaxed SiGe for High-Mobility MOSFETs (2006) (1)
Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices (2011) (1)
Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer (2005) (1)
TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process (2006) (1)
Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon ( 001 ) with 0 ° and 6 ° (2013) (1)
Strain relaxation in epitaxial films (1991) (1)
A 3x2 waveguide switch based on SiGe for C-band operation (2004) (1)
Low-Threshold Lasing in Strained Germanium under Optical Pumping (2018) (1)
Optimization of Microstructure and Dislocation Dynamics in In x Ga 1-x P Graded Buffers Grown on GaP by Movpe (1998) (1)
Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition (1998) (1)
(Invited) Effect of Al2O3/InGaAs Interface on Channel Mobility (2011) (1)
Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness (2004) (1)
Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006) (2007) (1)
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD (2005) (1)
Direct-Gap 2.1–2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers (2015) (1)
Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)] (2010) (1)
Si Industry at a Crossroads: New Materials or New Factories? (2002) (1)
The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow (2018) (1)
Manipulation of Germanium Nanocrystals in a Tri-Layer Insulator Structure of a Metal-Insulator-Semiconductor Memory Device (2002) (1)
Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells (2012) (1)
Reducing Threading Dislocation Densities in SiGe Mismatched Layers by Controllingc Strainc rate and Surface Roughness (2006) (1)
High quality Ge-OI, III–V-OI on 200 mm Si substrate (2016) (1)
Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation (2004) (1)
Integration of Si-CMOS and III-V materials through multi-wafer stacking (2017) (1)
Strategies For Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers (2001) (1)
Vertically Aligned Single Crystalline ZnO Nanorods Grown by Hydrothermal Synthesis and the Theoretical Model for Predicting the Rod Density (2006) (1)
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007) (0)
Materials, Processes, and Markets for Monolithic III-V Devices in Silicon Integrated Circuits (2018) (0)
Strained Ge mosfet technology (2004) (0)
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire (2002) (0)
In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application (2022) (0)
1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge (2010) (0)
Direct growth of Ge on Si for integrated Si microphotonic photodetectors (1999) (0)
Arrayed Si/SiGe Nanowire Heterostructure Formation via Au-catalyzed Wet Chemical Etching Method (2009) (0)
The American Innovation System (2010) (0)
The Story of a Fundamental Innovation (2010) (0)
Device Quality, High Mis-Matched Semi Conductor Materials Grown on Si Substrates Using Unique Dislocation Engineering (2002) (0)
Cathodoluminescence of Ingaas-GaAs Single Heterostructures (1986) (0)
Vertic Fabri (2013) (0)
Ebic Analysis of Gettering at Si-Si (Ge) Heteroepitaxial Misfit Dislocations as a Function of Impurity Decoration (1992) (0)
Novel CMOS-Compatible Optical Platform (2003) (0)
Micro Raman Spectroscopy of Annealed Erbium Implanted GaN (2004) (0)
Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes. (2022) (0)
Demonstration of amber-green light emitting diodes with lattice-mismatched AlInP active region (2013) (0)
Relaxed Silicon-Germanium on Insulator (SGOI) (2001) (0)
A most provoking thing: New writing from QUT (2004) (0)
Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS (2009) (0)
Ni(alloy)-germanosilicide contact technology for Si1-xGex (x=0.20-0.5) junctions (2006) (0)
New Lattice-Mismatched Materials and Services (2007) (0)
CuPt atomic ordering and band gap reduction in AlInP for green LED applications (2013) (0)
Educators Focus on Indigenous Issues (1996) (0)
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices (2002) (0)
Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction (2006) (0)
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method (2005) (0)
In Situ Depostion of High-k Dielectrics on Compound Semiconductor in MOCVD System (2010) (0)
Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell (2016) (0)
Lattice-Mismatch and CMOS (2005) (0)
Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms (2020) (0)
Selective SiGe nanostructures grown by UHVCVD (1999) (0)
Strained germanium MOSFETs: Devices and process technology (2004) (0)
Charge storage in nanocrystal systems: Role of defects? (2004) (0)
A CMOs-compatible substrate and Contact Technology for Monolithic i ntegration of iii-V Devices with silicon (2009) (0)
MOSFET channel engineering using strained silicon, silicon-germanium, and germanium channels (2003) (0)
GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer (2019) (0)
SiGeOI Fabricated via Wafer-Bonding and Etch-back or Smart-cut Personnel (0)
III-V/Si Electronics (2011) (0)
Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates (2003) (0)
MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE (2008) (0)
(Invited) Materials Integration for III-V/SiGe+CMOS Integrated Circuit Platforms (2013) (0)
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method (2005) (0)
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications (2020) (0)
Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire (2004) (0)
(Invited) Monolithic Integration of Si-CMOS and III-V-on-Si through Direct Wafer Bonding Process (2018) (0)
3.225 Electronic and Mechanical Properties of Materials, Summer 2002 (2002) (0)
Strained SiGe Materials for High Quantum Efficiency Photodiodes at µ = 1.3 to 1.5µm (1999) (0)
High Mobility Strained Si/SiGe Heterostructure MOSFETs (2002) (0)
Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs Citation (2011) (0)
Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate (2005) (0)
Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer (2006) (0)
LEO Flight Testing of GaAs on Si Solar Cells Aboard MISSES (2004) (0)
Silicon-based optoelectronics : 27-28 January 1999, San Jose, California (1999) (0)
Development of active stub tuning networks in the Lower Hybrid Range of Frequencies (2013) (0)
Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces (2013) (0)
Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface (2010) (0)
Integration of AlGaInP LEDs and CMOS on 200-mm Si wafers (Conference Presentation) (2019) (0)
Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)] (2015) (0)
mm silicon substrate using metamorphic graded buffer (2017) (0)
Microelectronically Fabricated LiCoO 2 / SiO 2 / Polysilicon Power Cells (2005) (0)
Silicon-based Optoelectronics (1999) (0)
High Quality in.Ga 1−x as Heterostructures Grown on GaAs With Movpe (1998) (0)
Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell (2016) (0)
Microstructure and Band-Edge Steepness of InAs/GaSb Tunnel Diodes (2014) (0)
Epitaxial Growth of GaAs/Ge Interfaces (2006) (0)
Effect of Fluorine Incorporation on Wsi x /Al 2 O 3 /GaAs Gate Stack (2010) (0)
Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications (2003) (0)
Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates (2003) (0)
Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate (2007) (0)
The Growth of AlGaN/GaN Structure on 200mm Si(111) with Low Wafer Bow (2014) (0)
Controlling Threading Dislocation Density in a High Mismatched Completely Relaxed SiGe Layer (2016) (0)
Low-threshold optically pumped lasing in highly strained germanium nanowires (2017) (0)
Single-defect hexapole mode GeSn photonic crystal laser: Fabrication and simulation (2017) (0)
Controlling Epitaxial GaAs (2013) (0)
Epitaxy and wafer bonding of AlGalnP multiple-quantum wells and light-emitting diodes on 8″ Si substrates (2016) (0)
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge (2003) (0)
Development of Heterostructure Materials for Thermoelectric Device Applications (2005) (0)
AlGaAs and InGaAs-based light emitters on Si via relaxed graded GeSi buffer layers (1999) (0)
High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures (2012) (0)
Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power (2005) (0)
3x2 integrated microphotonic switches (2005) (0)
Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film (2020) (0)
Studies on the Electrical Characteristics of Ni and NiPt-alloy Silicided Schottky Diodes (2005) (0)
Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)] (2015) (0)
cal Nanowire InGaAs MOSFETs icated by a Top-down Approach (2013) (0)
Effect of Oxygen on Ni-Silicided FUSI Metal Gate (2006) (0)
Novel NOx Sensing Technology Determining value by looking at patent potential and possible (2018) (0)
The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate (2015) (0)
Defect and temperature dependence of tunneling in InGaAs/GaAsSb heterojunctions with varying band alignments (2015) (0)
Transport in High-Mobility Si 1−x Ge x Heterostructures Grown by Molecular-Beam Epitaxy (1992) (0)
Large spontaneous emission rate enhancement in a nanoscale III-V LED coupled to an optical antenna (2017) (0)
Design Optimization of Single-Layer Antireflective Coating for GaAs[subscript 1−x]xP[subscript x]x/Si Tandem Cells With x=0, 0.17, 0.29, and 0.37 (2015) (0)
Tri-layer heterostructures for improved PMOS enhancements preserved over a large processing temperature range (2004) (0)
Toward a III-V Multijunction Space Cell Technology on Si (2007) (0)
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors (1986) (0)
Properties of Mbe Grown Heterostructures of GaAs/InSb and InP/InSb. (1989) (0)
Optical Properties of Strain-Induced Nanometer Scale Quantum Wires (1993) (0)
Ge and III-V Channels for Si-based Electronics (2009) (0)
High brightness and bonding yield of integrated Si-CMOS and GaN LED wafers (2019) (0)
The Growth of Low Wafer Bow AlGaN / GaN Structure on 200 mm Si ( 111 ) (2015) (0)
Defense Technical Information Center Compilation Part Notice ADP 012657 TITLE : Strategies for Direct Monolithic Integration of AlxGa (0)
Determination of bandgap states in p-type In[subscript 0.49]Ga[subscript 0.51]P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy (2011) (0)
SiGeC Near Infrared Photodetectors (2002) (0)
Reflection Suppression in a GaAs0.77P0.23/Si Tandem Step-Cell (2015) (0)
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest: Welcome (2006) (0)
The Foundations of Entrepreneurial Strategy (2016) (0)
Detailed Characterization for TCAD Simulations of GaAs 0.76 P 0.24 /Si 1-y Ge y /Si Single Junction Solar Cells (2017) (0)
The integration of InGaP LEDs with CMOS on 200 mm silicon wafers (2017) (0)
FABRICATION OF GERMANIUM NANOWIRES BY OBLIQUE ANGLE DEPOSITION (2006) (0)
Preview: 2002 MRS Spring Meeting (2002) (0)
Point-of-Drinking Water Purification Innovation: The Water Initiative (2014) (0)
One Person, One Iteration at a Time (2010) (0)
Characteristics of Fundamental Innovation (2010) (0)
Building a New Innovation System: The Free Market Side (2010) (0)
The Innovation Crisis (2010) (0)
Building a New Innovation System: The Research and Education Side (2010) (0)
(Invited) The New Silicon Industry: Silicon CMOS ASICs Incorporating Compound Semiconductors (2018) (0)
Monolithic Integration of Non-Nitride Green Light Emitting Devices on Si Substrates (2009) (0)
Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device (2003) (0)
Laser Fabrication by Using Photonic Crystal (2003) (0)

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