Fan Ren
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Researcher ORCID 0000-0001-9234-019X
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Computer Science
Fan Ren's Degrees
- PhD Computer Science Stanford University
- Masters Computer Science University of California, Berkeley
- Bachelors Computer Science University of California, Berkeley
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(Suggest an Edit or Addition)Fan Ren's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- GAN : PROCESSING, DEFECTS, AND DEVICES (1999) (1603)
- A review of Ga2O3 materials, processing, and devices (2018) (1300)
- Wide band gap ferromagnetic semiconductors and oxides (2003) (924)
- ZnO nanowire growth and devices (2004) (537)
- Hydrogen-selective sensing at room temperature with ZnO nanorods (2005) (525)
- Fabrication and performance of GaN electronic devices (2000) (412)
- Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy (2002) (352)
- Magnetic properties of n-GaMnN thin films (2002) (298)
- Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods (2005) (282)
- Perspective—Opportunities and Future Directions for Ga2O3 (2017) (281)
- Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS (2018) (280)
- TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing (2004) (255)
- Recent advances in wide bandgap semiconductor biological and gas sensors (2009) (244)
- A survey of ohmic contacts to III-V compound semiconductors (1997) (236)
- Depletion-mode ZnO nanowire field-effect transistor (2004) (229)
- Review—Ionizing Radiation Damage Effects on GaN Devices (2016) (207)
- Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors (1998) (201)
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy (1989) (194)
- Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO (2003) (189)
- The control of cell adhesion and viability by zinc oxide nanorods. (2008) (186)
- Electrical effects of plasma damage in p-GaN (1999) (182)
- Review of radiation damage in GaN-based materials and devices (2013) (165)
- Thermal stability of W ohmic contacts to n‐type GaN (1996) (165)
- Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors (2002) (161)
- A Review of Dry Etching of GaN and Related Materials (2000) (159)
- Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling (1997) (154)
- Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide (1997) (151)
- Electrical transport properties of single ZnO nanorods (2004) (149)
- Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs (1998) (144)
- Radiation effects in GaN materials and devices (2013) (142)
- Carbon nanotube films for room temperature hydrogen sensing (2005) (138)
- Electroluminescence from ZnO nanowire/polymer composite p-n junction (2006) (137)
- Contacts to ZnO (2006) (135)
- pH measurements with single ZnO nanorods integrated with a microchannel (2005) (135)
- Contributions of surface topography and cytotoxicity to the macrophage response to zinc oxide nanorods. (2010) (133)
- Room temperature deposited indium zinc oxide thin film transistors (2007) (131)
- AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation (2003) (131)
- ZnO spintronics and nanowire devices (2006) (128)
- Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors (2005) (128)
- High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 (2017) (126)
- Pt∕ZnO nanowire Schottky diodes (2004) (125)
- Depth and thermal stability of dry etch damage in GaN Schottky diodes (1999) (123)
- Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors (2007) (120)
- 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers (2018) (119)
- High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates (2008) (115)
- Wide energy bandgap electronic devices (2003) (115)
- Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors (2008) (113)
- Oxygen sensors made by monolayer graphene under room temperature (2011) (113)
- Flexible graphene-based chemical sensors on paper substrates. (2013) (113)
- Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN (1994) (112)
- Gallium Nitride Processing for Electronics, Sensors and Spintronics (2006) (111)
- Wide bandgap GaN-based semiconductors for spintronics (2004) (110)
- Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes (2004) (109)
- Hydrogen and ozone gas sensing using multiple ZnO nanorods (2005) (108)
- UV photoresponse of single ZnO nanowires (2005) (107)
- Carbon doping of III–V compounds grown by MOMBE (1990) (107)
- dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors (2001) (105)
- Hydrogen detection using platinum coated graphene grown on SiC (2011) (104)
- MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors (2004) (103)
- Room temperature hydrogen detection using Pd-coated GaN nanowires (2008) (101)
- High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering (2008) (99)
- Functionalizing Zn- and O-terminated ZnO with thiols (2007) (97)
- Gd2O3/GaN metal-oxide-semiconductor field-effect transistor (2000) (96)
- Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors (2006) (95)
- Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors (2007) (95)
- Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors (2003) (94)
- Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition (2008) (94)
- Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes (2004) (92)
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy (1993) (91)
- Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes (2002) (90)
- GaN electronics for high power, high temperature applications (2000) (89)
- Advances in ZnO-based materials for light emitting diodes (2014) (89)
- Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors (2016) (87)
- AlGaN/GaN-based metal-oxide semiconductor diode-based hydrogen gas sensor (2004) (87)
- Radiation damage effects in Ga2O3 materials and devices (2019) (87)
- Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers (2002) (86)
- Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO (2004) (86)
- Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage (2001) (86)
- Hydrogen sensing with Pt-functionalized GaN nanowires (2009) (85)
- High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers (2017) (84)
- Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices (2009) (84)
- Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs (2001) (84)
- Zn0.9Mg0.1O∕ZnOp–n junctions grown by pulsed-laser deposition (2004) (84)
- Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors: (2013) (84)
- Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity (2016) (83)
- High voltage GaN Schottky rectifiers (1999) (82)
- Plasma and wet chemical etching of In0.5Ga0.5P (1992) (81)
- Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods (2005) (80)
- High mobility InGaZnO4 thin-film transistors on paper (2009) (80)
- Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors. (2017) (80)
- Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN (1999) (79)
- Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor (1999) (79)
- Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors (1991) (79)
- Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition (2008) (79)
- Inductively coupled plasma-induced etch damage of GaN p-n junctions (2000) (77)
- Comparison of GaN p-i-n and Schottky rectifier performance (2001) (75)
- Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO (2004) (74)
- Wet chemical etching survey of III-nitrides (1997) (73)
- Low temperature (<100 °C) patterned growth of ZnO nanorod arrays on Si (2007) (73)
- Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection (2005) (73)
- Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors (2007) (73)
- Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes (2003) (72)
- pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region (2007) (72)
- Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage (2018) (72)
- Nitride and oxide semiconductor nanostructured hydrogen gas sensors (2010) (72)
- Low-voltage indium gallium zinc oxide thin film transistors on paper substrates (2010) (71)
- Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors (2002) (70)
- AlGaN/GaN HEMT based liquid sensors (2004) (70)
- Randomized clinical study of wear of enamel antagonists against polished monolithic zirconia crowns. (2018) (70)
- The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications. (2007) (70)
- Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels (2005) (68)
- Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide (2002) (68)
- Stable room temperature deposited amorphous InGaZnO4 thin film transistors (2008) (67)
- Randomly oriented, upright SiO2 coated nanorods for reduced adhesion of mammalian cells. (2009) (67)
- Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning (2004) (66)
- Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3 (2017) (65)
- Vertical and lateral GaN rectifiers on free-standing GaN substrates (2001) (65)
- Electrical transport properties of single GaN and InN nanowires (2006) (63)
- Inversion behavior in Sc2O3/GaN gated diodes (2002) (63)
- Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO (2003) (62)
- Oxygen diffusion into SiO2-capped GaN during annealing (1999) (62)
- Hydrogen-sensitive GaN Schottky diodes (2003) (61)
- GaN n- and p-type Schottky diodes: Effect of dry etch damage (2000) (61)
- Dry etching of thin-film InN, AlN and GaN (1993) (60)
- Ar+‐ion milling characteristics of III‐V nitrides (1994) (60)
- Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP (1992) (59)
- 300°C GaN/AlGaN Heterojunction Bipolar Transistor (1998) (59)
- Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching (2017) (59)
- Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries (1998) (59)
- Transport properties of InN nanowires (2005) (58)
- ICP etching of SiC (1998) (58)
- Ultradeep, low-damage dry etching of SiC (2000) (57)
- Energy band offsets of dielectrics on InGaZnO4 (2017) (57)
- Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors (2011) (57)
- Optical properties of Zn1−xMgxO nanorods using catalysis-driven molecular beam epitaxy (2003) (57)
- Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit (2018) (56)
- Electrical properties of bulk semi-insulating β-Ga2O3(Fe) (2018) (56)
- Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications (2000) (55)
- Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions (2011) (55)
- Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors (2008) (54)
- Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO (2002) (54)
- Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr (2000) (54)
- Pt-coated InN nanorods for selective detection of hydrogen at room temperature (2005) (53)
- REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO (2009) (53)
- Enzyme-based lactic acid detection using AlGaN /GaN high electron mobility transistors with ZnO nanorods grown on the gate region (2008) (53)
- Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors (2007) (52)
- Growth of InN for ohmic contact formation by electron cyclotron resonance metalorganic molecular‐beam epitaxy (1993) (52)
- c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection (2008) (52)
- Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors (2006) (52)
- Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks (2008) (52)
- Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors (2005) (51)
- Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition (2000) (51)
- GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators (1990) (51)
- Comparison of Pt/GaN and Pt/4H-SiC gas sensors (2003) (51)
- Characteristics of unannealed ZnMgO /ZnO p-n junctions on bulk (100) ZnO substrates (2005) (50)
- Development of enhancement mode AIN/GaN high electron mobility transistors (2009) (50)
- Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy (2002) (50)
- Determination of MgO/GaN heterojunction band offsets by x-ray photoelectron spectroscopy (2006) (50)
- Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors (2008) (49)
- ZnO and Related Materials for Sensors and Light-Emitting Diodes (2008) (49)
- Detection of hydrogen with SnO2-coated ZnO nanorods (2007) (49)
- Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit (1992) (49)
- Hydrogenation of GaAs on Si: Effects on diode reverse leakage current (1987) (49)
- Comparison of dry etch chemistries for SiC (1997) (49)
- Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (2009) (49)
- Measurement of Zn0.95Cd0.05O∕ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy (2005) (49)
- SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications (2012) (49)
- High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors (2002) (48)
- Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 (2018) (48)
- InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE (1992) (48)
- Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si (2018) (48)
- Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon. (2014) (48)
- Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure (2010) (48)
- Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors (2013) (48)
- Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors (2016) (47)
- Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes (2003) (47)
- Ti /Au n-type Ohmic contacts to bulk ZnO substrates (2005) (47)
- Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices (2004) (47)
- Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy (2007) (47)
- Smooth, low‐bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures (1992) (47)
- Carrier concentration dependence of acceptor activation energy in p-type ZnO (2006) (46)
- Electrical and optical properties of GaN films implanted with Mn and Co (2002) (46)
- CO2 detection using polyethylenimine/starch functionalized AlGaN∕GaN high electron mobility transistors (2008) (46)
- Wet chemical etching of AlN and InAlN in KOH solutions (1996) (46)
- High rate dry etching of InGaP in BCl3 plasma chemistries (1995) (46)
- Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers (2000) (46)
- Dip Pen Nanolithography of Conductive Silver Traces (2010) (45)
- Contacts to p-type ZnMgO (2004) (45)
- Ferromagnetism in GaN and SiC doped with transition metals (2003) (45)
- Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length (2018) (45)
- Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen (2004) (45)
- Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs (2002) (45)
- Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes (2006) (45)
- Hydrogen incorporation, diffusivity and evolution in bulk ZnO (2003) (45)
- Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures (1990) (45)
- Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current (2018) (44)
- Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates (2010) (44)
- Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing (2002) (44)
- Effects of defects and doping on wide band gap ferromagnetic semiconductors (2003) (44)
- Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane (2005) (44)
- 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers (2017) (43)
- Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics (1998) (43)
- Thermal stability of W and WSix contacts on p-GaN (1998) (43)
- High energy proton irradiation effects on SiC Schottky rectifiers (2002) (43)
- Dielectric passivation effects on ZnO light emitting diodes (2008) (42)
- Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes (2017) (42)
- Charge carrier and spin doping in ZnO thin films (2006) (42)
- Growth and Characterization of GaN Nanowires for Hydrogen Sensors (2009) (42)
- Annealing of dry etch damage in metallized and bare (-201) Ga2O3 (2017) (42)
- Reliability studies of AlGaN/GaN high electron mobility transistors (2013) (42)
- Studies of minority carrier diffusion length increase in p-type ZnO:Sb (2006) (42)
- Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers (2003) (42)
- New applications advisable for gallium nitride (2002) (42)
- UV ozone treatment for improving contact resistance on graphene (2012) (41)
- Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors (2008) (41)
- Band alignment of Al 2 O 3 with (-201) β-Ga 2 O 3 (2017) (41)
- InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor (2000) (41)
- Band-edge electroluminescence from N+-implanted bulk ZnO (2006) (41)
- Schottky diode measurements of dry etch damage in n- and p-type GaN (2000) (41)
- Selectively δ‐doped quantum well transistor grown by gas‐source molecular‐beam epitaxy (1988) (41)
- Degradation Mechanisms for GaN and GaAs High Speed Transistors (2012) (40)
- A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 (2018) (40)
- Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au (2017) (40)
- Antibacterial effects of zinc oxide nanorod surfaces. (2012) (40)
- Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate (2010) (39)
- Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 (2002) (39)
- Design of edge termination for GaN power Schottky diodes (2005) (39)
- Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors (2010) (39)
- Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions. (2018) (39)
- Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors (2011) (39)
- Characterization of bulk GaN rectifiers for hydrogen gas sensing (2005) (38)
- Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (2002) (38)
- Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation (1993) (38)
- Detection of halide ions with AlGaN∕GaN high electron mobility transistors (2005) (37)
- Effect of surface treatments on electrical properties of β-Ga2O3 (2018) (37)
- THERMAL STABILITY OF TI/PT/AU NONALLOYED OHMIC CONTACTS ON INN (1994) (37)
- Dry patterning of InGaN and InAlN (1994) (37)
- Improved oxide passivation of AlGaN∕GaN high electron mobility transistors (2005) (37)
- AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress (2011) (37)
- Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts (2008) (37)
- GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE (1990) (36)
- Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (36)
- Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape (2008) (36)
- Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes (2005) (36)
- Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces (2004) (36)
- Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films (2008) (36)
- Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization (2003) (36)
- On the origin of spin loss in GaMnN/InGaN light-emitting diodes (2004) (35)
- Artificial Neuron and Synapse Devices Based on 2D Materials. (2021) (35)
- Contact resistivity and transport mechanisms in W contacts to p- and n-GaN (2000) (35)
- Schottky rectifiers fabricated on free-standing GaN substrates (2001) (35)
- Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates (1996) (35)
- High-quality InP nanoneedles grown on silicon (2013) (34)
- High density plasma via hole etching in SiC (2001) (34)
- Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy (2011) (34)
- Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (34)
- Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors (2010) (34)
- Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE (2001) (34)
- Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor (2011) (34)
- Band offsets in ITO/Ga 2 O 3 heterostructures (2017) (34)
- Effect of dry etching on surface properties of III-nitrides (1997) (34)
- Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers (2000) (34)
- Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors (2012) (34)
- Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts (2007) (33)
- Comparison of H+ and He+ implant isolation of GaAs‐based heterojunction bipolar transistors (1995) (33)
- MID-IR INTERBAND CASCADE ELECTROLUMINESCENCE IN TYPE-II QUANTUM WELLS (1996) (33)
- Temperature dependence of GaN high breakdown voltage diode rectifiers (2000) (33)
- Radiation Effects in GaN-Based High Electron Mobility Transistors (2015) (33)
- Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE) (1992) (33)
- The incorporation of hydrogen into III-V nitrides during processing (1996) (33)
- Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors (2008) (33)
- GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. (2013) (33)
- Fermi level dependence of hydrogen diffusivity in GaN (2001) (33)
- High-Power GaN Electronic Devices (2002) (33)
- Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers (2010) (33)
- SiO2 / Gd2 O 3 / GaN Metal Oxide Semiconductor Field Effect Transistors (2001) (33)
- Damage introduction in InP and InGaAs during Ar and H2 plasma exposure (1992) (32)
- Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers (2017) (32)
- Surface and bulk leakage currents in high breakdown GaN rectifiers (2000) (32)
- Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices (1990) (32)
- High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes (2005) (32)
- Selfaligned AlGaAs/GaAs HBT grown by MOMBE (1991) (32)
- New Dielectrics for Gate Oxides and Surface Passivation on GaN (2005) (32)
- Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors (2011) (31)
- RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs (2008) (31)
- Stamp wound assay for studying coupled cell migration and cell debris clearance. (2010) (31)
- Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes (2010) (31)
- AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study (2012) (31)
- Temperature-Dependent Electrical Characteristics of β-Ga2O3Diodes with W Schottky Contacts up to 500°C (2018) (31)
- Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays (2019) (31)
- Copper Dry Etching with Cl2 / Ar Plasma Chemistry (1998) (31)
- Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices (2001) (31)
- Unintentional hydrogenation of GaN and related alloys during processing (1996) (31)
- Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors (2008) (31)
- Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy (1996) (31)
- Dry processed, through‐wafer via holes for GaAs power devices (1993) (31)
- Low specific contact resistance Ti∕Au contacts on ZnO (2006) (30)
- Microwave CI2/H2 discharges for high rate etching of InP (1992) (30)
- High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV (2013) (30)
- Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors (1995) (30)
- Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors (2013) (30)
- Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates (2018) (30)
- AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing (2005) (30)
- Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO (2004) (30)
- Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors (2007) (30)
- Plasma damage in p-GaN (2000) (30)
- Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition (2005) (30)
- Band offsets in the Sc2O3∕GaN heterojunction system (2006) (30)
- Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures (1991) (30)
- Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks (2012) (30)
- Effect of Cu3Sn coatings on electromigration lifetime improvement of Cu dual-damascene interconnects (2005) (29)
- Luminescence enhancement in AlN(Er) by hydrogenation (1997) (29)
- Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra (2019) (29)
- Defects at the surface of β-Ga2O3 produced by Ar plasma exposure (2019) (29)
- Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE (1991) (29)
- Review of Graphene as a Solid State Diffusion Barrier. (2016) (29)
- Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors (2004) (29)
- Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition (2007) (29)
- Indium zinc oxide thin films deposited by sputtering at room temperature (2008) (29)
- Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide (1998) (29)
- Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes (2005) (28)
- Hydrogen plasma passivation effects on properties of p-GaN (2003) (28)
- Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions (2012) (28)
- Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source (2005) (28)
- Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors (2012) (28)
- Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 (2017) (28)
- ECR plasma etching of chemically vapour deposited diamond thin films (1992) (28)
- Nanopillar lasers directly grown on silicon with heterostructure surface passivation. (2014) (28)
- High‐rate, anisotropic dry etching of InP in HI‐based discharges (1992) (27)
- Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg) (2019) (27)
- Valence and conduction band offsets in AZO/Ga2O3 heterostructures (2017) (27)
- Advantages and limitations of MgO as a dielectric for GaN (2003) (27)
- GaN PN junction issues and developments (2000) (27)
- Electrical passivation in hydrogen plasma exposed GaN (1994) (27)
- Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes (2008) (27)
- Elastic energy relaxation and critical thickness for plastic deformation in the core-shell InGaAs/GaAs nanopillars (2013) (27)
- Materials Characterization of WSi Contacts to n+‐GaN as a Function of Rapid Thermal Annealing Temperatures (1997) (27)
- Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure (1997) (27)
- Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors (2000) (27)
- Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon (2012) (26)
- Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes (2001) (26)
- Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors (2009) (26)
- Inductively coupled plasma etching of bulk, single-crystal Ga2O3 (2017) (26)
- Wet Chemical and Plasma Etching of Ga2 O 3 ( Gd2 O 3 ) (1997) (26)
- Perspective : Ga 2 O 3 for ultra-high power recti fi ers and MOSFETS (2018) (26)
- 10 Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators (1991) (26)
- SiC via holes by laser drilling (2004) (26)
- Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes (2004) (26)
- Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes (2014) (26)
- Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors (2010) (26)
- Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges (1993) (26)
- Reduction of sidewall roughness during dry etching of SiO2 (1992) (26)
- Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique (2006) (26)
- Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes (2012) (25)
- III-V semiconductor device dry etching using ECR discharges (1992) (25)
- Al2O3/InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy (2011) (25)
- Mask erosion during dry etching of deep features in III-V semiconductor structures (1992) (25)
- Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors (2013) (25)
- Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage (2013) (25)
- Gateless AlGaN/GaN HEMT response to block co-polymers (2004) (25)
- GaN/AlGaN HBT fabrication (2000) (25)
- GaN and other materials for semiconductor spintronics (2003) (24)
- Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma (1996) (24)
- Simulation of Radiation Effects in AlGaN/GaN HEMTs (2015) (24)
- High-Density Plasma-Induced Etch Damage of GaN (1999) (24)
- Proton irradiation of ZnO schottky diodes (2005) (24)
- Inductively coupled high-density plasma-induced etch damage of GaN MESFETs (2000) (24)
- High rate etching of SiC and SiCN in NF3 inductively coupled plasmas (1998) (24)
- Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors (2005) (24)
- Comparison of F2 plasma chemistries for deep etching of SiC (2001) (24)
- Recessed gate GaN field effect transistor (1997) (24)
- W2B-based rectifying contacts to n-GaN (2005) (24)
- Epitaxial growth of Sc2O3 films on GaN (2006) (24)
- Topics in Growth and Device Processing of III-V Semiconductors (1996) (24)
- GaN, ZnO and InN nanowires and devices. (2008) (23)
- Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition (2005) (23)
- Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors (2003) (23)
- Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers (2003) (23)
- Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO (2006) (23)
- Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application (1993) (23)
- GaN-based light-emitting diodes on origami substrates (2012) (23)
- Improvement of ohmic contacts on GaAs with in situ cleaning (1991) (23)
- Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures (1996) (23)
- Proton irradiation effects on AlN/GaN high electron mobility transistors (2010) (23)
- Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates (2004) (23)
- Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors (2011) (23)
- Thermal stability of WSix and W Schottky contacts on n-GaN (2003) (22)
- Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications (2011) (22)
- Photoluminescence and x‐ray photoelectron spectroscopy study of S‐passivated InGaAs(001) (1996) (22)
- Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors (2004) (22)
- Sidewall roughness during dry etching of InP (1991) (22)
- Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors (2017) (22)
- Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO (2003) (22)
- Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors (2003) (22)
- High Current, Common‐Base GaN ‐ AIGaN Heterojunction Bipolar Transistors (1999) (22)
- Penetrating living cells using semiconductor nanowires. (2007) (22)
- p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes (2014) (22)
- Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation (2004) (22)
- Investigation of wet etching solutions for In0.5Ga0.5P (1995) (22)
- The role of hydrogen in current-induced degradation of carbon-doped heterojunction bipolar transistors (1995) (22)
- Single‐energy, MeV implant isolation of multilayer III‐V device structures (1992) (21)
- Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium (1993) (21)
- Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes (2009) (21)
- Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN (2001) (21)
- Advanced Processing of GaN for Electronic Devices (2000) (21)
- Wet and dry etching characteristics of Al0.5In0.5P (1992) (21)
- Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors (1992) (21)
- InN-based Ohmic contacts to InAlN (1997) (21)
- High current bulk GaN Schottky rectifiers (2002) (21)
- Plasma etching of ZnS, ZnSe, CdS, and CdTe in electron cyclotron resonance CH4/H2/Ar and H2/Ar discharges (1993) (21)
- Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors (2010) (21)
- Band offsets in HfO2/InGaZnO4 heterojunctions (2012) (21)
- Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer (2017) (21)
- Effect of ECR plasma on the luminescence efficiency of InGaAs and InP (1995) (21)
- Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors (2005) (21)
- Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989) (21)
- Nitrogen passivation of deposited oxides on n 4H–SiC (2002) (21)
- Epitaxial growth of n+‐n GaAs metal‐semiconductor field‐effect transistor structures using tertiarybutylarsine (1990) (21)
- Plasma etching of III-V semiconductor thin films (1992) (21)
- ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles (2007) (21)
- ICP Dry Etching of ZnO and Effects of Hydrogen (2003) (20)
- Minipressure sensor using AlGaN/GaN high electron mobility transistors (2009) (20)
- Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (2013) (20)
- High breakdown M–I–M structures on bulk AlN (2002) (20)
- Photoreflectance study of H2S plasma-passivated GaAs surface (1999) (20)
- Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions (2013) (20)
- SiN/sub x//sulphide passivated GaAs-AlGaAs microdisk lasers (1993) (20)
- Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin (1991) (20)
- Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors (2021) (20)
- Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications (2012) (20)
- Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds (1997) (20)
- 10 MeV proton damage in β-Ga2O3 Schottky rectifiers (2018) (20)
- Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies (2012) (20)
- High breakdown voltage Au/Pt/GaN Schottky diodes (2000) (20)
- High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess (1995) (20)
- Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors (2016) (20)
- Schottky barrier height of boride-based rectifying contacts to p-GaN (2006) (20)
- Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates (2013) (20)
- Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire (2002) (20)
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs (1998) (20)
- Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes (2010) (19)
- Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3 (2019) (19)
- Wet Chemical Etching of Wide Bandgap Semiconductors- GaN, ZnO and SiC (2007) (19)
- Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors (2011) (19)
- Dry etching of via connections for InP power devices (1993) (19)
- Design of junction termination structures for GaN Schottky power rectifiers (2003) (19)
- Carbon and zinc delta doping for Schottky barrier enhancement on n‐type GaAs (1989) (19)
- Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs (1998) (19)
- 1.55 μm Er-doped GaN LED (1999) (19)
- Science of dry etching of III-V materials (1994) (19)
- Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors (2018) (19)
- Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE (1992) (19)
- Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors (2011) (19)
- Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers (1995) (19)
- Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries (2006) (19)
- Structure and optical properties of cored wurtzite (Zn, Mg)O heteroepitaxial nanowires (2004) (19)
- Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor (2013) (19)
- Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage (2014) (19)
- Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures (2009) (19)
- Implanted p–n junctions in GaN (1999) (19)
- Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN (2007) (18)
- Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance (2022) (18)
- Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) (2008) (18)
- Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors (2000) (18)
- Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors (1997) (18)
- Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes (2008) (18)
- Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors (2003) (18)
- Fabrication approaches to ZnO nanowire devices (2005) (18)
- Remote sensing system for hydrogen using GaN Schottky diodes (2005) (18)
- Fabrication of self‐aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors (1994) (18)
- Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers (2007) (18)
- Exhaled-Breath Detection Using AlGaN ∕ GaN High Electron Mobility Transistors Integrated with a Peltier Element (2008) (18)
- Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers (2019) (18)
- A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes (2007) (18)
- Dry etch gate recess high breakdown voltage power P-HEMTs (1994) (18)
- Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors (2014) (18)
- Thermal stability of tungsten ohmic contacts to the graded‐gap InGaAs/GaAs/AlGaAs heterostructure (1989) (17)
- UV-photoassisted etching of GaN in KOH (1999) (17)
- ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications (2011) (17)
- Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability (2013) (17)
- Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 (2019) (17)
- Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga2O3 (2017) (17)
- Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition (1991) (17)
- Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection (2005) (17)
- Pnp InGaAsN-based HBT with graded base doping (2001) (17)
- Effects of fluorine incorporation into β-Ga2O3 (2018) (17)
- Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing (2012) (17)
- Design and simulation of ZnO-based light-emitting diode structures (2005) (17)
- Si-diffused GaN for enhancement-mode GaN mosfet on si applications (2006) (17)
- Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO (2007) (17)
- Sb-based semiconductors for low power electronics (2013) (17)
- Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors (1997) (17)
- 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (2018) (17)
- Power semiconductor materials and devices (1997) (17)
- Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers (2019) (17)
- Transparent dual-gate InGaZnO thin film transistors: OR gate operation (2009) (17)
- ITO∕Ti∕Au Ohmic contacts on n-type ZnO (2006) (17)
- Ion-implantation and activation behavior of Si in MBE-Grown GaAs on Si substrates for GaAs MESFET's (1987) (16)
- Hydrogenation effects during high-density plasma processing of GaAs MESFETS (1997) (16)
- Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors (2019) (16)
- Room temperature ferromagnetism in GaMnN and GaMnP (2003) (16)
- Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN (2007) (16)
- Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates (2010) (16)
- Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors (2019) (16)
- Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping (2015) (16)
- Microstructural stability of ohmic contacts to InxGa1−xN (1996) (16)
- Activation characteristics of ion-implanted Si+ in AlGaN (2005) (16)
- Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers (2000) (16)
- Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 (2018) (16)
- Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures (2011) (16)
- AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons (2008) (16)
- Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3 (2017) (16)
- GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates (2004) (16)
- Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition (2008) (16)
- Optical and structural properties of Eu-diffused and doped ZnO nanowires (2009) (16)
- Ion implantation doping and isolation of In0.5Ga0.5P (1991) (16)
- Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO (2006) (16)
- The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 (2019) (16)
- Growth of GaAs/AlGaAs HBTs by MOMBE (CBE) (1992) (15)
- Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 μm Metal–Semiconductor–Metal Photodetector Applications (2007) (15)
- Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals (2018) (15)
- 160-A bulk GaN Schottky diode array (2003) (15)
- Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2-and Ir-based p-Ohmic contacts (2007) (15)
- Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors (2010) (15)
- Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor (2000) (15)
- Plasma etching of wide bandgap and ultrawide bandgap semiconductors (2020) (15)
- Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing (2014) (15)
- High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors (2000) (15)
- High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers (2001) (15)
- Growth and Device Performance of GaN Schottky Rectifiers (1999) (15)
- InGaP/GaAs single- and double-heterojunction bipolar transistors grown by organometallic vapour phase epitaxy (1992) (15)
- Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition (2005) (15)
- Diffusion of implanted Ge and Sn in β-Ga2O3 (2019) (15)
- Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers (2004) (15)
- Surface and bulk thermal annealing effects on ZnO crystals (2008) (15)
- Novel Testing for Corrosion of Glass-Ceramics for Dental Applications (2018) (15)
- Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures (2017) (15)
- Demonstration of a SiC Protective Coating for Titanium Implants (2020) (15)
- Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs (2003) (15)
- Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy (1994) (15)
- Thermal Simulations of High Current β-Ga2O3 Schottky Rectifiers (2019) (15)
- High microwave power electron cyclotron resonance etching of III–V semiconductors in CH4/H2/Ar (1996) (14)
- Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors (2004) (14)
- Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries (1998) (14)
- Polydiacetylene‐based selective NH3 gas sensor using Sc2O3/GaN structures (2007) (14)
- The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy (2005) (14)
- Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures (2006) (14)
- Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates (2016) (14)
- Inductively coupled plasma damage in GaN Schottky diodes (1999) (14)
- Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors (2012) (14)
- ZrB 2 Schottky diode contacts on n-GaN (2006) (14)
- Damage introduction in InGaP by electron cyclotron resonance Ar plasmas (1995) (14)
- Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors (2015) (14)
- Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability (1998) (14)
- Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 (2016) (14)
- Chloride ion detection by InN gated AlGaN∕GaN high electron mobility transistors (2010) (14)
- Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate (2014) (14)
- Edge termination design and simulation for bulk GaN rectifiers (2002) (14)
- Gallium nitride-based gas, chemical and biomedical sensors (2012) (14)
- Diffusion-Controlled Selective Wet Etching of ZnCdO over ZnO (2005) (14)
- Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models (2013) (14)
- Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing (1993) (14)
- Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation (2003) (14)
- Comparison of passivation layers for AlGaN/GaN high electron mobility transistors (2011) (14)
- Low Temperature Chlorine‐Based Dry Etching of III–V Semiconductors (1994) (14)
- Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy (1997) (14)
- Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth (1990) (14)
- Effect of deposition conditions and annealing on W Schottky contacts on n-GaN (2004) (14)
- Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's) (1992) (14)
- Diffusion of dopants and impurities in β-Ga2O3 (2021) (14)
- GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates (1988) (14)
- Novel Coatings to Minimize Bacterial Adhesion and Promote Osteoblast Activity for Titanium Implants (2020) (14)
- Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma (2000) (14)
- Comparison of ohmic metallization schemes for InGaAlN (1997) (14)
- Performance of GaAs MESFET's on InP substrates (1989) (13)
- Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers (2021) (13)
- Hydrogen Iodide‐Based Dry Etching of GaAs , InP , and Related Compounds (1992) (13)
- Growth and dry etch processing of MOMBE GaAs p-n junctions (1991) (13)
- Optical emission end point detection for via hole etching in InP and GaAs power device structures (1994) (13)
- Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers (2003) (13)
- Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices (2012) (13)
- Surface recombination velocities on processed InGaP p‐n junctions (1993) (13)
- Thermal stability of dry etch damage in SiC (1996) (13)
- Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films (2004) (13)
- Growth of device quality GaAs by chemical beam epitaxy (1988) (13)
- Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC (2016) (13)
- Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes (2004) (13)
- Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors (1991) (13)
- Metastable centers in AlGaN/AlN/GaN heterostructures (2012) (13)
- GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane (1991) (13)
- Novel Coating to Minimize Corrosion of Glass-Ceramics for Dental Applications (2020) (13)
- Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 (2018) (13)
- High-efficiency GaN/AlGaN HEMT oscillator operating at L-band (2006) (13)
- Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (2011) (13)
- Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (2002) (13)
- Cl2‐Based Dry Etching of GaAs, AlGaaAs, and GaP (1996) (12)
- Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers (2000) (12)
- Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 (2020) (12)
- GaN Metal Oxide Semiconductor Field Effect Transistors (1999) (12)
- Improved thermally stable ohmic contacts on p-GaN based on W2B (2006) (12)
- Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes (1997) (12)
- Anti-Bacterial Properties and Biocompatibility of Novel SiC Coating for Dental Ceramic (2020) (12)
- Analysis and design of AlGaN/GaN HEMT resistive mixers (2007) (12)
- Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide (2016) (12)
- Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy (1992) (12)
- Thermal simulations of high power, bulk GaN rectifiers (2003) (12)
- Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes (2015) (12)
- Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires (2006) (12)
- Improved sidewall morphology on dry-etched SiO2 masked GaN features (1998) (12)
- Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors (2012) (12)
- Large-area suspended graphene on GaN nanopillars (2011) (12)
- Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors (2018) (12)
- Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures (2000) (12)
- Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing (2008) (12)
- Structural characterization of GaN and GaAsxN1−x grown by electron cyclotron resonance‐metalorganic molecular beam epitaxy (1994) (12)
- Low resistance ohmic contacts on nitrogen ion bombarded InP (1994) (12)
- Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers (2018) (12)
- GaN-based light-emitting diodes on graphene-coated flexible substrates. (2014) (12)
- Cl2 / Ar High‐Density‐Plasma Damage in GaN Schottky Diodes (2000) (12)
- Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors (2013) (12)
- 10 and 26 GHz differential VCOs using InP HBTs (1996) (12)
- Comparison of Dry Etching Techniques for III‐V Semiconductors in CH 4 / H 2 / Ar Plasmas (1996) (12)
- High Breakdown Voltage ( − 201 ) β-Ga 2 O 3 Schottky Rectifiers (2017) (12)
- Patterning of Cu, Co, Fe, and Ag for magnetic nanostructures (1997) (12)
- 1.6 A GaN Schottky rectifiers on bulk GaN substrates (2002) (12)
- Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs (2001) (12)
- Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers (2022) (12)
- Effect of base dopant species on heterojunction bipolar transistor reliability (1994) (12)
- Cl2/Ar plasma etching of binary, ternary, and quaternary In‐based compound semiconductors (1996) (12)
- Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN (2006) (12)
- Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs (1995) (12)
- Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma (2003) (12)
- Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes (2019) (12)
- The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy (1994) (12)
- Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design (2001) (12)
- Effect of thermal stability of GaN epi-layer on the Schottky diodes (2000) (12)
- BCl3/N2 dry etching of InP, InAlP, and InGaP (1996) (12)
- Oxygen implant isolation of n-GaN field-effect transistor structures (1999) (12)
- High temperature annealing of GaN, InN, AlN and related alloys (1997) (12)
- Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers (2019) (12)
- Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation (2020) (12)
- Band Offsets in Dielectric/InGaZnO4 Heterojunctions (2013) (12)
- Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes (2004) (12)
- Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design (2002) (12)
- In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results (1999) (11)
- Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas (1997) (11)
- Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area (2014) (11)
- Migration and luminescence enhancement effects of deuterium in ZnO∕ZnCdO quantum wells (2008) (11)
- Thermal stability of OHMIC contacts to InN (1998) (11)
- Extraction of Migration Energies and Role of Implant Damage on Thermal Stability of Deuterium in Ga2O3 (2017) (11)
- The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS (2002) (11)
- Detection of C 2 H 4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers (2004) (11)
- AIN-based dilute magnetic semiconductors (2005) (11)
- Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene (2010) (11)
- Incorporation and drift of hydrogen at low temperatures in ZnO (2007) (11)
- Experimental estimation of electron–hole pair creation energy in β-Ga2O3 (2021) (11)
- Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN (2006) (11)
- Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes (1994) (11)
- FABRICATION OF SPIN-CURRENT FIELD-EFFECT TRANSISTOR STRUCTURES (1997) (11)
- Titanium Corrosion in Peri-Implantitis (2020) (11)
- Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes (2008) (11)
- Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs (1998) (11)
- Passivation of carbon doping in InGaAs during ECR-CVD of SiNx (1996) (11)
- Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C (2019) (11)
- 0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology (1992) (11)
- Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors (2009) (11)
- Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (2009) (11)
- Electron injection-induced effects in Si-doped β-Ga2O3 (2019) (11)
- Optimization of Edge Termination Techniques for β-Ga2O3 Schottky Rectifiers (2019) (11)
- Device processing and junction formation needs for ultra-high power Ga2O3 electronics (2019) (11)
- 60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers (2019) (11)
- Vertical and lateral mobilities in n-(Ga, Mn)N (2003) (11)
- RF performance of HVPE-grown AlGaN/GaN HEMTs (2004) (11)
- Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers (2003) (11)
- Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN (2006) (11)
- Wet Chemical Etching of Al0.5In0.5P (1995) (11)
- Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers (2002) (11)
- High density, low temperature dry etching in GaAs and InP device technology (1995) (11)
- Defects and ion redistribution in implant-isolated GaAs-based device structures (1993) (11)
- Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML) (2004) (11)
- Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers (2020) (11)
- Simulation of vertical and lateral ZnO light-emitting diodes (2006) (11)
- Dc characteristics of AlGaN/GaN heterostructure field-effect transistors on free-standing GaN substrates (2003) (11)
- Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition (2008) (11)
- High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar (1996) (10)
- Thermal stability of W2B and W2B5 contacts on ZnO (2005) (10)
- SEED: A Basic Optically Addressed Integrated Circuit (1992) (10)
- Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors (2011) (10)
- Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs (1998) (10)
- Detection of CO using bulk ZnO Schottky rectifiers (2005) (10)
- Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures (2001) (10)
- Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator (2006) (10)
- Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers (2019) (10)
- Wet and Dry Etching of InGaP (1991) (10)
- Gate breakdown characteristics of MgO/GaN MOSFETs (2003) (10)
- Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors (2014) (10)
- Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes (2004) (10)
- Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts (2017) (10)
- Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors (2013) (10)
- Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors (2013) (10)
- Rapid Electrochemical Detection for SARS-CoV-2 and Cardiac Troponin I Using Low-Cost, Disposable and Modular Biosensor System (2020) (10)
- Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar (1994) (10)
- 10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs (1991) (10)
- Implantation temperature dependence of Si activation in AlGaN (2006) (10)
- Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs (2001) (10)
- Fabrication of GaN nanostructures by a sidewall-etchback process (1994) (10)
- Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors (2011) (10)
- Comparison of plasma etch chemistries for MgO (2001) (10)
- Optical and structural properties of Mg-ion implanted GaN nanowires (2009) (10)
- Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3Vertical Geometry Rectifiers (2019) (10)
- Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection (2008) (10)
- Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity (2007) (10)
- Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 (2017) (10)
- Applications of ion implantation in III–V device technology (1993) (10)
- AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications (2018) (10)
- Optical Signature of the Electron Injection in Ga2O3 (2017) (10)
- Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications (1998) (10)
- Common‐Base Operation of GaN Bipolar Junction Transistors (1999) (10)
- Use of Sn-doped GaAs for non-alloyed ohmic contacts to HEMTs (1994) (10)
- Temperature dependence of MgO/GaN MOSFET performance (2003) (10)
- Dry etching of submicron gratings for InP laser structures-comparison of HI/H2, CH4/H2 and C2H6/H2 plasma chemistries (1992) (10)
- Electrical Performance of GaN Schottky Rectifiers on Si Substrates (2006) (10)
- Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments (2012) (9)
- Characteristics of Be+ and O+ or H+ co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures (1991) (9)
- Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes (2007) (9)
- Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates (2006) (9)
- Plasma damage effects in InAlN field effect transistors (1996) (9)
- Stability of InAs contact layers on GaAs/AlGaAs heterojunction bipolar transistors during implant isolation annealing (1992) (9)
- Effect of electron cyclotron resonance generated hydrogen plasmas on carbon incorporation and interfacial quality of GaAs and AlGaAs grown by metalorganic molecular‐beam epitaxy (1992) (9)
- Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics after UV-Ozone Pretreatment (2004) (9)
- Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3 (2019) (9)
- npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions (2000) (9)
- Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas (1997) (9)
- Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures (2015) (9)
- Heterostructure bipolar transistor employing carbon-doped base grown with trimethyl-Ga and arsine (1990) (9)
- Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture (2017) (9)
- Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing (1992) (9)
- Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation (2014) (9)
- Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74 (2019) (9)
- High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes (2002) (9)
- CrB2 Schottky Barrier Contacts on n-GaN (2005) (9)
- Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer (2008) (9)
- Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (2012) (9)
- Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN (2006) (9)
- Selective dry etching using inductively coupled plasmas. Part I. GaAs/AlGaAs and GaAs/InGaP (1999) (9)
- Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors (2010) (9)
- Influence of gate oxide thickness on Sc2O3/GaN MOSFETs (2003) (9)
- Pt/Ti/Pt/Au Schottky contacts on HEMTs (1997) (9)
- Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer (2003) (9)
- Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications (1992) (9)
- Ti ∕ Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition (2006) (9)
- Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl 2 /Ar, Cl 2 /N 2 , BCl 3 /Ar, and BCl 3 /N 2 (1996) (9)
- Novel methodology for measuring intraoral wear in enamel and dental restorative materials (2020) (9)
- Current relaxation analysis in AlGaN/GaN high electron mobility transistors (2017) (9)
- Ohmic contacts ton-type In0.5Ga0.5P (1992) (9)
- Activation kinetics of implanted Si+ in GaN and application to fabricating lateral schottky diodes (2003) (9)
- Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing (2017) (9)
- Selective dry etching using inductively coupled plasmas. Part II. InN/GaN and InN/AlN (1999) (9)
- Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System (2007) (8)
- Factors influencing the survival of implant-supported ceramic-ceramic prostheses: A randomized, controlled clinical trial (2020) (8)
- Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes (2013) (8)
- Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas (1998) (8)
- Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors (2019) (8)
- OH-Si complex in hydrogenated n-type β-Ga2O3:Si (2021) (8)
- Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistors (1993) (8)
- Advances in Processing of ZnO (2006) (8)
- Band alignment in ZrSiO4/ZnO heterojunctions (2016) (8)
- Comparison of multipolar and magnetic mirror electron cyclotron resonance sources for CH4/H2 dry etching of III–V semiconductors (1994) (8)
- AlGaN∕GaN high electron mobility transistors on Si∕SiO2/poly-SiC substrates (2006) (8)
- Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors (2004) (8)
- Low bias dry etching of tungsten and dielectric layers on GaAs (1993) (8)
- AlGaAs/GaAs based HEMTs, inverters and ring oscillators with InGaAs and AlGaAs etch-stop layers (1991) (8)
- Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes (2007) (8)
- Catalyst-free ZnO nanowires grown on a-plane GaN (2010) (8)
- Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon (2002) (8)
- AlGaN/GaN Structures Grown by HVPE: Growth and Characterization (2003) (8)
- Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors (2013) (8)
- AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing (2005) (8)
- Dry etching of CuCrO2 thin films (2008) (8)
- W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN (2007) (8)
- Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition (2006) (8)
- Effects of Semiconductor Processing Chemicals on Conductivity of Graphene (2012) (8)
- Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes (2005) (8)
- Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors (2005) (8)
- Thermal stability of hydrogen in LiAlO2 and LiGaO2 (1996) (8)
- Rectifying ZnO : Ag ∕ ZnO : Ga Thin-Film Junctions (2009) (8)
- W2B-based ohmic contacts to n-GaN (2005) (8)
- ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy (2015) (8)
- Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact (1991) (8)
- On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors (2021) (8)
- Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition (2008) (8)
- Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering (2015) (8)
- Analysis of InGaAs metal-semiconductor-metal OE mixers (2004) (8)
- High-Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates (2004) (8)
- Use of Ti in ohmic metal contacts to p‐GaAs (1995) (8)
- Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process (1991) (8)
- Conformable coating of SiO2 on hydrothermally grown ZnO nanorods (2008) (8)
- Demonstration of SiO2/SiC based protective coating for dental ceramic prostheses. (2019) (8)
- Pd-catalyzed hydrogen sensing with InN nanobelts (2009) (8)
- Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With $\hbox{TiB}_{2}$- and Ir-Based Contacts (2008) (8)
- High selectivity Inductively Coupled Plasma etching of GaAs over InGaP (2000) (7)
- Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas (1997) (7)
- Optical emission spectroscopy of electron cyclotron resonance discharges for III-V semiconductor processing (1993) (7)
- Comparison of Dry and Wet Etch Processes for Patterning SiO2 / TiO2 Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers (2001) (7)
- GaN-Based Sensors (2012) (7)
- Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers (2002) (7)
- Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability (2018) (7)
- Low temperature ECR-CVD of SiNX for III-V device passivation (1998) (7)
- Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP (1996) (7)
- Nanostructured Surfaces to Promote Osteoblast Proliferation and Minimize Bacterial Adhesion on Titanium (2021) (7)
- Surface Immobilizations of AlGaN/GaN High Electron Mobility Transistor Based Sensors (2010) (7)
- Effects of P implantation and post-implantation annealing on defect formation in ZnO (2012) (7)
- Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs) (1992) (7)
- Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (2015) (7)
- Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3 (2019) (7)
- Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO (2006) (7)
- Thermal stability of WSix and W ohmic contacts on GaN (1999) (7)
- Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65 (2019) (7)
- Optical investigation of nitrogen ion implanted bulk ZnO (2009) (7)
- Temperature dependent performance of ITO Schottky contacts on β-Ga2O3 (2021) (7)
- Novel carbon‐doped p‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy (1991) (7)
- Electrical characteristics of GaN implanted with Si + at elevated temperatures (2005) (7)
- Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors (2014) (7)
- Effect of substrate temperature on dry etching of InP, GaAs, and AlGaAs in iodine‐ and bromine‐based plasmas (1994) (7)
- Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation (2011) (7)
- Effect of PECVD of SiO2 passivation layers on GaN and InGaP (2001) (7)
- Hydrogen incorporation and its temperature stability in SiC crystals (1997) (7)
- Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4 Heterostructures (2016) (7)
- Si+ ion implanted MPS bulk GaN diodes (2004) (7)
- Deep traps and thermal measurements on AlGaN/GaN on Si transistors (2011) (7)
- Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors (2018) (7)
- Phototransistor measurements in AlGaN/GaN HBTs (2001) (7)
- Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application (2006) (7)
- Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors (2017) (7)
- Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers (2020) (7)
- Effect of ion energy on hydrogen diffusion in n- and p-GaAs (1995) (7)
- Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing (2003) (7)
- An In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT with 65.2% power-added efficiency under 1.2 V operation (1998) (7)
- A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. (2013) (7)
- Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm) (1993) (7)
- Control of nucleation site density of GaN nanowires (2007) (7)
- 2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes (2018) (7)
- Patterning of LiGaO 2 and LiAlO 2 by Wet and Dry Etching (1996) (7)
- Conduction mechanisms in W and WSix ohmic contacts to InGaN and InN (1997) (6)
- Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates (2011) (6)
- GaAs / InGaP Selective Etching in BCl3 / SF 6 High‐Density Plasmas (1999) (6)
- Semiconductor-Based Sensors (2016) (6)
- Radiation Damage in GaN-Based Materials and Devices (2014) (6)
- Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K (2021) (6)
- Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs (2015) (6)
- Trilayer lift‐off metallization process using low temperature deposited SiNx (1992) (6)
- Use of 370 nm UV light for selective-area fibroblast cell growth (2005) (6)
- Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 (2018) (6)
- Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping (2012) (6)
- Anisotropic dry etching of submicron W features using a Ti mask (1992) (6)
- GaN pnp bipolar junction transistors operated to 250 °C (2000) (6)
- Environmental stability of candidate dielectrics for GaN-based device applications (2009) (6)
- Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K (2007) (6)
- AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications (2011) (6)
- Wet and dry etching of Sc2O3 (2001) (6)
- High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (2014) (6)
- Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure (2013) (6)
- Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources (1993) (6)
- Wet Chemical and Plasma Etching of Ga2O3(Gd2O3). (1997) (6)
- Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors (2006) (6)
- Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors (2016) (6)
- Enhanced functionality in GaN and SiC devices by using novel processing (2003) (6)
- Impact of electron injection on carrier transport and recombination in unintentionally doped GaN (2020) (6)
- Small signal measurement of Sc2O3 AlGaN/GaN moshemts (2004) (6)
- Novel fabrication of self-aligned and microwave power heterojunction bipolar transistors (1995) (6)
- Temperature dependence of pnp GaN/InGaN HBT performance (2004) (6)
- W and WSix Ohmic contacts on p- and n-type GaN (1999) (6)
- Degradation of sub-micron gate AlGaN/GaN HEMTs due to reverse gate bias (2010) (6)
- Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxy (1988) (6)
- (Invited) Radiation Effects in AlGaN/GaN and InAlN/GaN High Electron Mobility Transistors (2015) (6)
- The study of low temperature hydrothermal growth of ZnO nanorods on stents and its applications of cell adhesion and viability (2009) (6)
- A comparative study of wet etching and contacts on ð 201 Þ and ( 010 ) oriented bGa 2 O 3 (2017) (6)
- Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy (2004) (6)
- In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition (2020) (6)
- ZnO Thin-Film and Nanowire-Based Sensor Applications (2016) (6)
- The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE (1993) (6)
- Gas, Chemical and Biological Sensing with ZnO (2006) (6)
- Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (2002) (6)
- Annealing temperature dependence of band alignment of NiO/β-Ga2O3 (2022) (6)
- Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform. (2021) (6)
- GaN Bipolar Junction Transistors with Regrown Emitters (2001) (6)
- High performance pseudomorphic power HEMTs (1997) (6)
- Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation (2012) (6)
- In-based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor (1991) (6)
- Ir-based diffusion barriers for Ohmic contacts to p-GaN (2008) (6)
- UV excimer laser drilled high aspect ratio submicron via hole (2009) (6)
- Low-temperature dry etching of tungsten, dielectric, and trilevel resist layers on GaAs (1994) (6)
- Dynamic Switching Characteristics of 1 A Forward Current β-Ga 2 O 3 Rectifiers (2019) (6)
- W and W/WSi/In1−xAlxN ohmic contacts to n-type GaN (1999) (6)
- Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 (2022) (6)
- Band offsets in YSZ/InGaZnO4 heterostructure system. (2014) (6)
- Dissolution activation energy of a fluorapatite glass-ceramic veneer for dental applications. (2020) (6)
- Antibacterial Properties of Charged TiN Surfaces for Dental Implant Application. (2019) (6)
- High Dose Gamma-Ray Irradiation of SiC Schottky Rectifiers (2003) (6)
- Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 (2022) (6)
- Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN (2007) (6)
- Thermal stability of deuterium in InAlN and InAlGaN (1995) (6)
- GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation (2013) (6)
- Charge pumping in Sc2O3/GaN gated mos diodes (2002) (6)
- Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges (1994) (6)
- SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors (2012) (6)
- Temperature-Dependent Electrical Characteristics of β-Ga2O3 Diodes with W Schottky Contacts up to 500°C (2019) (6)
- Effect of contact geometry on 4H-SiC rectifiers with junction termination extension (2003) (6)
- Hydrogen passivation in n- and p-type 6H-SiC (1997) (6)
- ZnO-BASED NANOWIRES (2007) (6)
- Spatial distribution of electrical properties in GaN p-i-n rectifiers (2000) (6)
- ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO (2006) (6)
- Dry surface cleaning of plasma‐etched high electron mobility transistors (1993) (5)
- Thermal stability of WSiX Schottky contacts on n-type 4H-SiC (2004) (5)
- Dynamic Switching Characteristics of 1 A Forward Current $\boldsymbol{\beta}$ -Ga2O3 Rectifiers (2019) (5)
- Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions (2012) (5)
- Electrical Effects of Ar Plasma Damage on GaN Diode Rectifiers (1999) (5)
- Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors (2015) (5)
- Thermal Considerations in Design of Vertically Integrated Si ∕ GaN ∕ SiC Multichip Modules (2006) (5)
- GaN Device Processing (1997) (5)
- Normally‐on/off AlN/GaN high electron mobility transistors (2010) (5)
- Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn (2003) (5)
- Y-gate submicron gate length GaAs metal-semiconductor field effect transistors (1993) (5)
- Measurement of external stress on bulk GaN (2006) (5)
- High 2Deg Mobility and Fabrication of High Performance AiGaAs/GaAs Selectively Doped Heterostructure Transistors and Ring Oscillators on Si Substrates (1989) (5)
- Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors (2011) (5)
- TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures (2010) (5)
- Measurement of Band Offsets in Y 2 O 3 /InGaZnO 4 Heterojunctions (2014) (5)
- Dopant passivation in AlInAs and InGaP by atomic deuterium (1991) (5)
- Ultra-Wide Bandgap Materials and Device (2017) (5)
- Spin injection and spin loss in GaMnN/InGaN Light‐Emitting Diodes (2005) (5)
- The feasibility of using trimethylamine alane as an Al precursor for MOMBE (1991) (5)
- Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers (2003) (5)
- Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN (2007) (5)
- Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO (2005) (5)
- Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation (1993) (5)
- Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. (2002) (5)
- Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy (2002) (5)
- Investigation of C-terminal domain of SARS nucleocapsid protein–Duplex DNA interaction using transistors and binding-site models (2013) (5)
- Qualitative Analysis of Remineralization Capabilities of Bioactive Glass (NovaMin) and Fluoride on Hydroxyapatite (HA) Discs: An In Vitro Study (2021) (5)
- Novel Coatings to Minimize Corrosion of Titanium in Oral Biofilm (2021) (5)
- Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs (1997) (5)
- Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx (1998) (5)
- Formation of Narrow, Dry‐Etched Mesas for Long Wavelength InP ‐ InGaAsP Lasers (1993) (5)
- Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds (1997) (5)
- Nonalloyed high temperature ohmic contacts on Te-doped InP (1999) (5)
- Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors (2011) (5)
- Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates (2004) (5)
- Dry etching of MgCaO gate dielectric and passivation layers on GaN (2006) (5)
- InN-Based Chemical Sensors (2016) (5)
- An electro-mechanical simulation of off state AlGaN/GaN device degradation (2012) (5)
- Self-Annealing in Neutron-Irradiated AlGaN ∕ GaN High Electron Mobility Transistors (2009) (5)
- Circular and Rectangular Via Holes Formed in SiC via Using ArF Based UV Excimer Laser (2011) (5)
- Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65 (2019) (5)
- Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3 /O2 Plasmas (1996) (5)
- Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (2011) (5)
- High-performance AlGaAs/GaAs SDHTs and ring oscillators grown by MBE on Si substrates (1989) (5)
- Process development for III-V nitrides (1996) (5)
- Activation and diffusion characteristics of implanted Si and Be in Al0.5In0.5P (1992) (4)
- Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics (2021) (4)
- Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors (2012) (4)
- Reduction of Sidewall Roughness During Dry Etching of SiO 2 (1992) (4)
- High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC (2003) (4)
- Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage (2010) (4)
- (Gordon E. Moore Award Presentation) Sensors Using AlGaN/GaN Based High Electron Mobility Transistor for Environmental and Bio-Applications (2013) (4)
- Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors (2015) (4)
- Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates (2010) (4)
- Passivation of AlN/GaN high electron mobility transistor using ozone treatment (2010) (4)
- Very Low Sheet Resistance AlN / GaN High Electron Mobility Transistors (2009) (4)
- Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices (1992) (4)
- Recent advances in wide bandgap semiconductor-based gas sensors (2013) (4)
- New high-rate dry etch mixture for INP-based heterostructures (1992) (4)
- MBE Growth of Oxides for III–N MOSFETs (1999) (4)
- A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs (2000) (4)
- Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy (1997) (4)
- Nanoengineering of Semiconductor Nanowires-Synthesis, Processing and Sensing Applications (2011) (4)
- Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN (2016) (4)
- Effects of Oxide Thickness and Gate Length on DC Performance of Submicrometer MgO/GaN MOSFETs (2003) (4)
- Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing (2015) (4)
- GaN enhancement mode metal‐oxide semiconductor field effect transistors (2005) (4)
- A high efficiency class‐F power amplifier using AIGaN/GaN HEMT (2006) (4)
- Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors (2017) (4)
- Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors (2015) (4)
- The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors (1993) (4)
- MEMS-Based Optical Chemical Sensors (2016) (4)
- Recent advances in gate dielectrics and polarised light emission from GaN (2002) (4)
- Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)] (2009) (4)
- Radiation damage in Ga2O3 (2019) (4)
- Investigation of a GaMnN/GaN/InGaN structure for spin LED (2005) (4)
- Microwave Wireless Power Transmission - A System Perspective (2006) (4)
- Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers (2021) (4)
- Light-actuated water droplet motions on ZnO nanorods (2013) (4)
- p-Ohmic Contact Study for Intracavity Contacts in AlGaAs/GaAs Vertical Cavity Surface-Emitting Lasers (2001) (4)
- The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics (2000) (4)
- Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates (2004) (4)
- Functionalized GaN Based Transistors For Biosensing (2013) (4)
- Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates (2016) (4)
- Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors (2015) (4)
- Modulating malignant epithelial tumor cell adhesion, migration and mechanics with nanorod surfaces (2011) (4)
- Effect of BCl3 Dry Etching on InAlN Surface Properties (1996) (4)
- GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors (2012) (4)
- Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing (2016) (4)
- Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition (1999) (4)
- Low , Thermodynamically Stable Ga O -GaAs Interfaces: Fabrication, Characterization, and Modeling (1997) (4)
- Low Temperature (< 100{degree sign}C) Patterned Growth of ZnO Nanorod Arrays on Si (2007) (4)
- Thermal stability and etching characteristics of electron beam deposited SiO and SiO2 (2000) (4)
- Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping (2016) (4)
- Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy (1992) (4)
- Material Properties of GaAs-on-Si and Fabrication of Digital Integrated Circuits (1988) (4)
- Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ−Be (1991) (4)
- Design of Ga2O3 modulation doped field effect transistors (2021) (4)
- Band Offsets of Insulating & Semiconducting Oxides on (AlxGa1-x)O3 (2019) (4)
- Comparison of dry etching techniques for InGaP, AlInP and AlGaP (1996) (4)
- Dry etching and implant isolation characteristics of AlxGa1-xAs grown by metal organic molecular beam epitaxy (1991) (4)
- Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates (2006) (4)
- Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers (2021) (4)
- Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3 (2021) (4)
- Effect of pH Cycling Frequency on Glass–Ceramic Corrosion (2020) (4)
- Hydroxyapatite Formation on Coated Titanium Implants Submerged in Simulated Body Fluid (2020) (4)
- Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics (2020) (4)
- Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs (2022) (4)
- Wet chemical etch solutions for Al{sub x}Ga{sub 1{minus}x}P (1996) (4)
- Dry etch selectivity of Gd2O3 to GaN and AlN (2000) (4)
- Effects of Sc2 O 3 Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors (2004) (4)
- Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices? (2019) (4)
- Formation of dry etched gratings in GaN and InGaN (1997) (4)
- Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates (2008) (4)
- Passivation of dopants in InGaP using ECR hydrogenation (1996) (3)
- Wet Chemical Etch Solutions for AlxGa1-xP. (2010) (3)
- Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors (2018) (3)
- AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer (2020) (3)
- Realization of Precise Tuning the Superconducting Properties of Mn-Doped Al Films for Transition Edge Sensors (2020) (3)
- Oxide thin film transistors on novel flexible substrates (2010) (3)
- (Invited) Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors (2014) (3)
- Lateral schottky GaN rectifiers formed by Si+ ion implantation (2004) (3)
- Dry etching of Ga2O3 (2019) (3)
- Comparison of Ti∕Al∕Pt∕Au and Ti∕Au Ohmic contacts on n-type ZnCdO (2006) (3)
- p-Ohmic contact resistance for GaAs(C)/GaN(Mg) (2000) (3)
- (Invited) The Resurgence of III-N Materials Development: AlInN HEMTs and GaN-on-Si (2011) (3)
- Dependence of Zn1−xMgxO:P film properties on magnesium concentration (2008) (3)
- Impact of radiation and electron trapping on minority carrier transport in p-Ga2O3 (2022) (3)
- Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs (2003) (3)
- Ir-Based Schottky and Ohmic Contacts on n-GaN (2007) (3)
- Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers (2003) (3)
- Improved Thermal Stability CrB2 Contacts on ZnO (2005) (3)
- High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (3)
- Comparison of and plasma chemistries for dry etching of InGaAlP alloys (1996) (3)
- Long-term stability at 200 degrees C of implant-isolated GaAs (1993) (3)
- Thermal stability of band offsets of NiO/β-GaN (2022) (3)
- Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation (2002) (3)
- Thermally Stable TiB2 Ohmic Contacts on n-ZnO (2006) (3)
- Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges (1994) (3)
- Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions (2017) (3)
- Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes (2004) (3)
- Investigation of the binding affinity of C-terminal domain of SARS coronavirus nucleocapsid protein to nucleotide using AlGaN/GaN high electron mobility transistors (2012) (3)
- AlGaN/GaN HEMT And ZnO Nanorod Based Sensors for Chemical and Bio-Applications (2008) (3)
- Study of NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System (1999) (3)
- Demonstration of Hybrid Al$_{x}$ Ga$_{1-x}$As–Polysilicon Microelectromechanical Tunable Filter (2007) (3)
- Band alignment of atomic layer deposited SiO 2 on ( 010 ) ( Al 0 . 14 Ga 0 . 86 ) 2 O 3 (2018) (3)
- Comparison of ZnO Dry Etching in High Density Inductively Coupled CH4/H2 and C2H6/H2-Based Chemistries (2006) (3)
- Thermoreflectance Temperature Mapping of Ga2O3 Schottky Barrier Diodes (2019) (3)
- A facile method for flexible GaN‐based light‐emitting diodes (2012) (3)
- Simulated High-Temperature Characteristics of Sc2 O 3 / GaN MOSFETs (2003) (3)
- Ion Implantation Doping of InGaP, InGaAs, and InAlAs (1991) (3)
- Wet Chemical Etching of LiGaO2 and LiAlO2 (2001) (3)
- Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact (1990) (3)
- Reaction-Limited Wet Etching of CuCrO2 (2007) (3)
- Damage to III–V devices during electron cyclotron resonance chemical vapor deposition (1999) (3)
- AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications (2009) (3)
- Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids (2013) (3)
- Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001) (3)
- Design and Fabrication of GaN High Power Rectifiers (2005) (3)
- Fabrication Techniques for GaAs Based HBTS and FETs (1993) (3)
- Comparison of ECR plasma chemistries for etching of InGaP and AlGaP (1997) (3)
- Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy (2008) (3)
- Processing Methods for the Fabrication of Sub-0.25 µm GaAs Heterostructure Devices and Circuits (1989) (3)
- III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric (1997) (3)
- Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors (2002) (3)
- Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD (2012) (3)
- New dry-etch chemistries for III–V semiconductors (1994) (3)
- Band offsets in HfSiO4/IGZO heterojunctions (2015) (3)
- Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor (2008) (3)
- Growth of Pnp heterojunction bipolar transistor structures by metalorganic molecular beam epitaxy (1992) (3)
- Dry Etch Damage In InN, InGaN and InAIN (1996) (3)
- Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems (1999) (3)
- Flip bonding with SU-8 for hybrid AlxGa1-xAs-polysilicon MEMs-tunable filter (2007) (3)
- Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features (1993) (3)
- Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers (2021) (3)
- Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition (2009) (3)
- Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO (2007) (3)
- Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3 (2021) (3)
- Processing challenges for GaN-based photonic and electronic devices (1997) (3)
- Fast Cerebrospinal Fluid Detection Using Inexpensive Modular Packaging with Disposable Testing Strips (2019) (3)
- Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors (2020) (3)
- Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers (2002) (3)
- Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization (2011) (3)
- Stability of hydrogen in ScAlMgO4 (1997) (3)
- Sulfide Passivated GaAs/AlGaAs Microdisk Lasers (1994) (3)
- Sources of Hydrogen in III-V Device Processing (1993) (2)
- Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force (2022) (2)
- The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition (2008) (2)
- Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire (2020) (2)
- Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures (2005) (2)
- Improved Au Schottky contacts on GaAs using cryogenic metal deposition (2006) (2)
- High-speed modulation of single-mode and multi-mode 850 nm, intra-cavity contacted, shallow implant-apertured, vertical-cavity surface-emitting lasers (2001) (2)
- High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors (1998) (2)
- ZrB2-based Ohmic contacts to p-GaN (2006) (2)
- Pt Schottky contacts to n-(Ga,Mn)N (2002) (2)
- Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs (2001) (2)
- P-type ZnO thin films via phosphorus doping (2008) (2)
- Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers (2020) (2)
- Nitride-based Ohmic and Schottky Contacts to GaN (2007) (2)
- Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (2015) (2)
- Macrophage Response to Zinc Oxide Nanorod Surfaces -Topography and Toxicity (2009) (2)
- InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor (1999) (2)
- Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers (2003) (2)
- Photoelectrochemical Etching of In(x)Ga(1-x)N (1999) (2)
- Band alignments of dielectrics on (− 201) β-Ga2O3 (2019) (2)
- Effects of hydrogen plasma treatment on electrical properties of p-AlGaN (2004) (2)
- Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE (1995) (2)
- Low Bias Dry Etching of Sic and Sicn in ICP NF 3 Discharges (1998) (2)
- Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors (2001) (2)
- Influence of SiO2 PECVD layers on p-GaN rectifiers (2002) (2)
- GaN AND AlGaN HIGH VOLTAGE POWER RECTIFIERS (2003) (2)
- A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via (2015) (2)
- Single- and Double-Heterojunction Pseudomorphic In (Al Ga ) P/In Ga As High Electron Mobility Transistors Grown by Gas Source Molecular Beam Epitaxy (1997) (2)
- Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas (1997) (2)
- Process development for small-area GaN/AlGaN heterojunction bipolar transistors (2001) (2)
- (Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices (2014) (2)
- Comparison Of F 2 Plasma Chemistries For Deep Etching Of SiC (2000) (2)
- Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3 (2022) (2)
- Wet Chemcial Etching of Compound Semiconductors (2006) (2)
- Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors (1994) (2)
- RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 (2008) (2)
- High yield scalable dry etch process for indium based heterojunction bipolar transistors (1992) (2)
- Device degradation during low temperature ECR-CVD. Part I: GaAs MESFETs (1998) (2)
- ZnO Nanowires for Sensing and Device Applications (2007) (2)
- High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors (1993) (2)
- Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors (2020) (2)
- Acceptor state formation in arsenic‐doped ZnO films grown using ozone (2008) (2)
- Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs (1991) (2)
- Erratum: Band offsets in the Sc2O3∕GaN heterojunction system [Appl. Phys. Lett. 88, 142115 (2006)] (2006) (2)
- Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN (2006) (2)
- Novel carbon-doped p-channel GaAs MESFET grown by MOMBE (1992) (2)
- Enhanced etch rates of tri-level resist stacks in microwave discharges (1993) (2)
- Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3 (2021) (2)
- Comprehensive analysis of laserscanner validity used for measurement of wear (2019) (2)
- Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors (2022) (2)
- ZnO based thin films, nano-wires, and nano-belts for photonic and electronic devices and sensors (2008) (2)
- Transparent Thin Film Transistors Based on InZnO for Flexible Electronics (2008) (2)
- A Novel Detection of Non-Nucleoside Reverse Transcriptase Inhibitors (NNRTIs) for HIV-1 with AlGaN/GaN High Electron Mobility Transistors (2013) (2)
- Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures (2009) (2)
- Ir ∕ Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO (2007) (2)
- Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform. (2022) (2)
- Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth (2022) (2)
- Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes (2014) (2)
- Nanosensor networks for health-care applications (2020) (2)
- Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers (2022) (2)
- Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etching (1995) (2)
- Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74 (2020) (2)
- High quality InGaP micropillars directly grown on silicon (2013) (2)
- Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers (2003) (2)
- Plasma etching of InGaP, AlInP and AlGaP in BCl3 environments (1996) (2)
- The use of GaN based electronic and photonic devices for bio-applications (2006) (2)
- AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications (2010) (2)
- Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements (2016) (2)
- Advanced processing of group-III nitrides (2002) (2)
- 190nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole (2009) (2)
- Effect of Buffer Oxide Etchant (BOE) on Ti/Al/Ni/Au Ohmic Contacts for AlGaN/GaN Based HEMT (2015) (2)
- GaAs via-hole etching and MOMBE regrowth (1992) (2)
- AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield (2007) (2)
- A Comprehensive Approach to HEMT Reliability Testing (2009) (2)
- 2.6 A, 0.69 MW cm -2 single-chip bulk GaN p-i-n rectifier (2004) (2)
- Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) (2019) (2)
- Determination of the Reliability of AlGaN/GaN HEMTs through Trap Detection Using Optical Pumping (2012) (2)
- Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers (2002) (2)
- Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors (2000) (2)
- ELASTIC ENERGY RELAXATION AND CRITICAL THICKNESS FOR PLASTIC DEFORMATION IN CORE-SHELL InGaAs/GaAs NANOPILLARS (2013) (2)
- Effect of annealing on electronic carrier transport properties of gamma-irradiated AlGaN/GaN high electron mobility transistors (2014) (2)
- Partially doped GaAs single-quantum-well FET (1989) (2)
- Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing (2017) (2)
- Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates (2011) (1)
- Neutron Irradiation of AlGaN Polarization Doped Field Effect Transistors (2020) (1)
- The Use of Amorphous SiO and SiO2 to Passivate AuGe Based Contact for GaAs Integrated Circuits (1999) (1)
- Hydrogen Detection Using Chemical Vapor Deposited Graphene Coated with Platinum (2011) (1)
- Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications (2000) (1)
- Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors (2002) (1)
- Plasma etching of NiFeCo, NiMnSb and CoFeB-based multilayers (1999) (1)
- Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki (2019) (1)
- Dielectrics for GaN Based MIS-Diodes (1997) (1)
- A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996) (1)
- Device Series Resistance Calculations for Vertical Cavity Surface-Emitting Lasers (2001) (1)
- Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor (2000) (1)
- Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) (2006) (1)
- Gadolinium Oxide Gate Dielectrics for GaN MOSFETs (2001) (1)
- The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors (2012) (1)
- Effects of fluorine incorporation into β-Ga 2 O 3 (2018) (1)
- Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs (2001) (1)
- Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors (2006) (1)
- Properties and Effects of Hydrogen in GaN (1999) (1)
- Devices for High-Frequency Applications (2001) (1)
- Pt/Ti/Pt/Au Schottky contacts on InGaP/GaAs HEMTs (1997) (1)
- Dry etching of InGaAlP alloys in Cl2/Ar high ion density plasmas (1996) (1)
- Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters (2009) (1)
- Effect of Proton Irradiation on DC Performance and Reliability of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors (2014) (1)
- Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs (2005) (1)
- Ion Milling and Reactive Ion Etching of III-V Nitrides (1994) (1)
- Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method (2012) (1)
- Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface (2003) (1)
- AlGaN/GaN High Electron Mobility Transistors on Si/SiO 2 /poly-SiC Substrates (2006) (1)
- In-situ chemical surface treatments for the removal of AlN/SiC interfacial contamination (2003) (1)
- [REGULAR PAPERS] High Dose 60Co r-Ray Irradiation of W/GaN Schottky Diodes (2004) (1)
- High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications (1997) (1)
- Novel In Situ Ion Bombardment Process for a Thermally Stable ( > 800 ° C ) Plasma Deposited Dielectric (1999) (1)
- High speed InGaP emitter HBTs fabricated with ECR dry etch technique (1994) (1)
- Design of Transparent Indium Tin Oxide-Based Interdigitated Fingers for Metal Semiconductor Metal Photodetector (2007) (1)
- Damage investigation in AlGaAs and InGaP exposed to high ion density Ar and SF6 plasmas (1997) (1)
- Effect of N 2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN (2000) (1)
- FABRICATION TECHNIQUES FOR SELF-ALIGNED GaAs-BASED HBTs AND SUBMICRON GATE LENGTH FETs (1994) (1)
- High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors (2020) (1)
- Growth of Ga203(Gd203) Using Molecular Beam Epitaxy Technique - Key to First Demonstration of GaAs MOSFETs (1998) (1)
- Radiation e ff ects in GaN materials and devices (2012) (1)
- Low Temperature SiN x as a Sacrificial Layer in Novel Device Fabrication (1993) (1)
- InP-based single heterojunction bipolar transistors with improved breakdown characteristics (1994) (1)
- Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation (2011) (1)
- Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN (1994) (1)
- In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers (2020) (1)
- High-voltage Recessed-gate GaAs Field Effect Transistors (1994) (1)
- Processing and Device Performance of GaN Power Rectifiers (1999) (1)
- Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation (2002) (1)
- Device Processing for GaN High Power Electronics (2000) (1)
- Progress and challenges of GaN-based microwave HEMTs, amplifiers and novel spin (2003) (1)
- HVPE-GROWN AlGaN/GaN HEMTs (2003) (1)
- The Incorporation and Behavior of Oxygen in AlGaAs Grown by Mombe Using Trimethylamine Alane (1990) (1)
- Advances in Hydrogen Gas Sensor Technology and Implementation in Wireless Sensor Networks (2016) (1)
- AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers (2017) (1)
- Proton irradiation effects on Sb-based heterojunction bipolar transistors (2009) (1)
- AlGaN/GaN Sensors for Direct Monitoring of Nerve Cell Response to Inhibitors (2016) (1)
- Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers (2020) (1)
- Acceptor Delta-Doping for Schottky Barrier Enhancement on n -Type GaAs (1990) (1)
- Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors (2003) (1)
- Batch fabrication and structure of integrated GaAs-Al x Ga 1-x As FET-SEEDs (1992) (1)
- Reduction of dry etch damage to GaAs using pulse-time modulated plasmas (2007) (1)
- Improved Hydrogen Sensing Performance of AlGaN/GaN Based Sensor with Platinum Nanonetworks (2013) (1)
- High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature (2008) (1)
- Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire (2004) (1)
- Effects of base structure on performance of GaN-based heterojunction bipolar transistors (2003) (1)
- InAlAs/InGaAs MHEMT degradation during DC and thermal stressing (2010) (1)
- 111-V Compound Semiconductor MOSFETs Using Ga,O,(Gd,O,) As Gate Dielectric (1997) (1)
- Comparison of implant isolation species for GaN field-effect transistor structures (1999) (1)
- Low damage, highly anisotropic dry etching of SiC (1998) (1)
- Insulator/GaN Heterostructures of Low Interfacial Density of States (2000) (1)
- MOCVD-grown HEMTs on Al2O3 substrates (2002) (1)
- Erratum: “Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes” [Appl. Phys. Lett. 94, 212108 (2009)] (2009) (1)
- GaN High Electron Mobility Transistor Degradation: Effect of RF Stress. (2013) (1)
- Strain measurement in 6H-SiC under external stress (2006) (1)
- AlGaN/GaN High Electron Mobility Transistors integrated into Wireless Detection System for Glucose and pH in Exhaled Breath Condensate (2009) (1)
- Luminescence from Erbium-Doped Gallium Nitride Thin Films (1998) (1)
- GaN HEMT Degradation: Effect of RF Stress (2012) (1)
- Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers (2003) (1)
- Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs (1992) (1)
- Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing (1998) (1)
- Photoelectrochemical Etching of In x Ga l-x N (1998) (1)
- RF performance of GaN-based npn bipolar transistors (2003) (1)
- The structure and thermal stability of tungsten‐based contact metallizations to n‐GaN (1998) (1)
- Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors (2014) (1)
- Ion Beam Processing of InGaAsP (1993) (1)
- Frequency Response and Devices Performance of the Indium Zinc Oxide Thin Film Transistors (2007) (1)
- Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors (2012) (1)
- Simulations of InGaN-base heterojunction bipolar transistors (2003) (1)
- Thermally Stable Novel Metal Contacts on Bulk, Single-Crystal n-type ZnO (2007) (1)
- Temperature Dependence and Current Transport Mechanisms in Al x Ga 1−x N Schottky Rectifiers (2000) (1)
- Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] (2011) (1)
- Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition (2012) (1)
- Material and device properties of 3′ diameter GaAs-on-Si with buried P-type layers (1989) (1)
- High sensitivity CIP2A detection for oral cancer using a rapid transistor-based biosensor module. (2023) (1)
- 1 GeV proton damage in β-Ga2O3 (2021) (1)
- Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips. (2022) (1)
- Photoluminescence of ZnO Nanowires with Eu Diffusion Process (2008) (1)
- Electron cyclotron resonance plasma etching of InP and related materials in BCl3 (1996) (1)
- (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC (2019) (1)
- A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors (2019) (1)
- Review—Opportunities for Rapid, Sensitive Detection of Troponin and Cerebral Spinal Fluid Using Semiconductor Sensors (2019) (1)
- Hydrogen-Selective Sensing at Room Temperature with Pt-Coated ZnO Nanorods (2005) (1)
- Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors (2022) (1)
- Study of Protein-Peptide Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors (2013) (1)
- In Vitro Corrosion of SiC-Coated Anodized Ti Nano-Tubular Surfaces (2021) (1)
- Large-area MoS 2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse (2019) (1)
- Effect of Silicon Carbide Coating on Osteoblast Mineralization of Anodized Titanium Surfaces (2022) (1)
- Ga+-focused ion beam damage in n-type Ga2O3 (2022) (1)
- Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices (2019) (1)
- Experimental and theoretical characterization of delta-doped quantum well field-effect transistors grown by gas-source molecular-beam epitaxy (1988) (1)
- Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions (2019) (1)
- Ion Beam Elastic Backscattering Spectrometric Analysis of Ion Implantation Modified Glass Filled Ruby (2017) (1)
- Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 um Metal-Semiconductor-Metal Photo-Detector Applications (2007) (1)
- High temperature stable WSi/sub x/ ohmic contacts on GaN (1998) (1)
- Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors (2001) (1)
- Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN (2007) (1)
- Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors (2012) (1)
- Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T‐Gate Passivation (1999) (1)
- Radiation and process-induced damage in Ga2O3 (2018) (1)
- Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K (2006) (1)
- (Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC (2021) (1)
- Exfoliated and Bulk β-Gallium Oxide Electronic and Photonic Devices (2022) (1)
- Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 (2008) (1)
- Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices II (2020) (1)
- Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors (2003) (1)
- Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3 (2022) (1)
- InGaAsN/AIGaAs Pnp Heterojunction Bipolar Transistor (2000) (1)
- Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO (2003) (1)
- Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices (1992) (1)
- Preparation and Characterization of Pt Catalysts Supported on Cobalt-Polypyrrole-Carbon for Fuel Cells (2014) (1)
- Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition (2006) (1)
- Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices (2019) (1)
- Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors (2013) (1)
- Effect of surface treatments on electrical properties of β-Ga 2 O 3 (2018) (1)
- Electron Cyclotron Resonance Plasma Processing of GaAs-AlGaAs Hemt Structures (1991) (0)
- Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers (2003) (0)
- Cl{sub 2}/Ar High Density Plasma Damage in GaN Schotky Diodes (1999) (0)
- AlGaN power rectifiers (2003) (0)
- Author ' s personal copy Randomly oriented , upright SiO 2 coated nanorods for reduced adhesion of mammalian cells (2009) (0)
- Ion Implantation Technology For III-V Heterojunction Devices (1993) (0)
- Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires. J. Appl. Phys. 96, 3424-3428 (2004) (0)
- 1.55-um Er-doped GaN LED (1999) (0)
- a-Plane GaN for Hydrogen Sensing Applications (2010) (0)
- Novel Dielectrics for GaN Device Passivation and Improved Reliability (2013) (0)
- Drilling of via Holes in AlGaN/GaN Transistors on SiC using ArF based UV Excimer Laser (2011) (0)
- Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy (1993) (0)
- Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes (2001) (0)
- High Temperature Stable Contacts for GaN HEMTs and LEDs (2008) (0)
- Cl2-Based ECR Etching of InGaP, AlInP and AIGaP (1996) (0)
- Development of GaN and InGaN Gratings by Dry Etching (1997) (0)
- Fabrication and Characterization of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors (2011) (0)
- Effect of Cryogenic Temperature Deposition of Various Metal Contacts to Bulk, Single-Crystal n-type ZnO (2006) (0)
- State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium (1999) (0)
- Novel Tungsten Boride based High Thermal Stability Ohmic Contacts to n-GaN (2006) (0)
- Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs (2002) (0)
- Properties of post‐annealed ZnO films grown with O3 (2008) (0)
- Growth of Heterojunction Bipolar Transistors from Molecular Beams (1996) (0)
- GaAs/AlGaAs Fet-seed Smart Pixels With Several Transistors (1992) (0)
- ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2} (1996) (0)
- Realization of Precise Tuning the Superconducting Properties of Mn-Doped Al Films for Transition Edge Sensors (2020) (0)
- Real-time Detection of Botulinum Toxin with AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments (2001) (0)
- S2046 Reducing Tumor Growth On Stents Using Nanorods: Nanotechnology for the Prevention of Cell Adhesion and Migration (2009) (0)
- 4.7 Kv Reverse Breakdown Voltage Ultra-Thin Double-Layered NiO/β-Ga2O3 p-n Junction Rectifiers (2022) (0)
- Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress (2011) (0)
- Pushing or pulling droplets on ZnO nanorods with an UV light (2012) (0)
- Self-Aligned, Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices (1992) (0)
- GaN: Defect and Device Issues (1998) (0)
- Cu-plated through-wafer vias for AlGaN∕GaN high electron mobility transistors on Si (2009) (0)
- Producing GaAs devices with doped regions and devices produced thereby (1992) (0)
- GaN Based Electronics And Their Applications (2002) (0)
- High density plasma damage induced in n-GaN Schottky diodes using Cl{sub 2}/Ar discharges (1999) (0)
- High temperature Ohmic contacts to p-type GaN for use in light emitting applications (2008) (0)
- A Submicron Shifted T‐Gate Process for High Breakdown Voltage Power Transistors (1999) (0)
- Si + Ion Implantation into GaN at Cryogenic Temperatures (2005) (0)
- Transient Magneto-optical Spectroscopy of Spin-LED Structures (2006) (0)
- Ohmic contacts on binary and ternary III-nitrides (1996) (0)
- Tri-Layer Lift-off Metallization Process Using Low Temperature Deposited SiNx (1992) (0)
- InGaN quantum wells for spin detection : obstacles and prospects (2005) (0)
- ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes (2007) (0)
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- High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) (2007) (0)
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- W 2 B based High Thermal Stability Ohmic Contacts to n-GaN (2005) (0)
- GaAs heterostructure FET frequency dividers fabricated with high-yield 0.5 mu m direct-write trilevel-gate-resist (1989) (0)
- (Invited) Effect of Temperature and 5 Mev Proton Irradiation Damage on Performance of b-Ga2O3 Photodetectors (2017) (0)
- Small Diameter Dry Etched Via Holes in GaAs (1993) (0)
- Investigation of Traps in AlGaN/GaN HEMTs by Sub-Bandgap Optical Pumping under DC and Gate-Lag Measurement (2014) (0)
- Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source (2003) (0)
- Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors (2002) (0)
- Effect of Mg Ionization Efficiency on Heterojunction Bipolar Transistors (2000) (0)
- Dilute Magnetic GaN, SiC and Related Semiconductors (2004) (0)
- Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements (2016) (0)
- Applications of Graphene in Semiconductor Devices as Transparent Contact Layers, Diffusion Barriers, and Thermal Management Layers (2016) (0)
- Hydrogen in Crystalline Semiconductors: III-V Compounds (1996) (0)
- Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3 Transistors (2022) (0)
- Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors (2000) (0)
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- AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor (2000) (0)
- Investigating the Effects of Annealing on Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistors (2015) (0)
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- Dry Etch Damage in GaAs P-N Junctions (1991) (0)
- Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- GaAs/InGaP Selective Etching in BCl3/SF6 High-Density Plasmas. (2000) (0)
- (Invited) The Use of Sub-Bandgap Optical Pumping to Identify Defects in AlGaN/GaN High Electron Mobility Transistors (2016) (0)
- (Invited) Simulation of Radiation Effects in AlGaN/GaN HEMTs (2015) (0)
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- Dry Etch Self-Aligned AlInAs/InGaAs Heterojunction Bipolar Transistors (1991) (0)
- AlGaAs/GaAs HBTs grown on InP by organometallic vapour phase epitaxy (1992) (0)
- Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors (1992) (0)
- Rapid Thermal Annealing (1996) (0)
- AFM Analysis of ECR Dry-Etched Ingap, Alinp and Algap (1995) (0)
- PROCESSING CHALLENGES FOR GaN-BASED PHOTONIC AND ELECTRONIC id 967 ~-223 I : c 5 Wb -9 7-aa 36 c 1 DEVICES (2008) (0)
- Contributors (2019) (0)
- Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics (2003) (0)
- p-GaAs Base Regrowth for GaN HBTs and BJTs (2000) (0)
- Nanoelectrode Arrays Based on Low Site Density Aligned Carbon Nanotubes (0)
- Novel compound semiconductor devices based on III-V nitrides (1995) (0)
- Temperature dependence of current conduction in barrier‐enhanced, carbon delta‐doped GaAs diodes (1990) (0)
- New Dry-Etch Chemistries for III-V Semiconductors (1993) (0)
- Gallium Nitride Electronic Devices (2014) (0)
- AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on Lattice Matched Metallic Layers (2016) (0)
- Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74 (2020) (0)
- Hydrogen Sensitive Schottky Diodes on Free-standing GaN (2006) (0)
- MgCaO Dry Etching on GaN (2005) (0)
- High Speed InP-Based ICs for a Fiber-to-Microwave Link (1996) (0)
- Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning (1991) (0)
- Detection of Glucose and pH from Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- Ir/Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO (2007) (0)
- Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)] (2012) (0)
- Selective Wet and Dry Etching of NiO over β-Ga2O3 (2022) (0)
- 300 Degree C GaN/AlGaN Heterojunction Bipolar Transistor (1998) (0)
- Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers (2023) (0)
- Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers (2002) (0)
- Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure (2011) (0)
- Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design (2003) (0)
- Carbon Doped Al/sub x/Ga/sub 1-x/As by OMVPE: Doping Properties, Oxygen and Hydrogen Incorporation, and Device Applications (1992) (0)
- Novel Oxide Passivation of AlGaN/GaN High Electron Mobility Transistor And Reliability of Passivation (2006) (0)
- Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO 2 (1999) (0)
- Erratum: “Novel In Situ Ion Bombardment Process for a Thermally Stable ( > 800 ° C ) Plasma Deposited Dielectric” [Electrochem. Solid‐State Lett., 2, 537 (1999)] (1999) (0)
- Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation (2014) (0)
- GaN pnp Bipolar Junction Transistors Operated to 250°C (2000) (0)
- DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers (2019) (0)
- Growth and Doping of AlAs by Mombe (1994) (0)
- Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy (2002) (0)
- First demonstration of the AlGaAs-InGaAsN-GaAs P-n-P double heterojunction bipolar transistor (2000) (0)
- Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers (2019) (0)
- 4H-SiC Schottky Diode Array with 430 A Forward Current (2004) (0)
- Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX) (1995) (0)
- The Evolution of Wide Bandgap Semiconductors at SOTAPOCS (2009) (0)
- Wide bandgap nanowire sensors (2007) (0)
- Invited) Exploration of Process Techniques for Ga 2 O 3 Based Electronics (2018) (0)
- Chemical Etching of AlN and InAlN in KOH Solutions (1996) (0)
- Effect of Electron Injection on Minority Carrier Transport Properties in Unintentionally Doped GaN (2020) (0)
- Integrated GaAs/AlGaAs FET-SEEDss (1992) (0)
- (Invited) Micromechanical Aspects of GaN Hemt Performance and Reliability (2022) (0)
- Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability (2002) (0)
- Iodine-Based dry Etching Chemistries for InP and Related Compounds (1992) (0)
- Formation of patterned tungsten layer (1992) (0)
- Device and System Technologies for Microwave Wireless Applications (1995) (0)
- Low voltage X-band InGaP/GaAs power heterojunction bipolar transistor (1994) (0)
- Optical and Electrical Studies of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors (2016) (0)
- Study on 1.5μm Laser Properties of Er³⁺/Yb³⁺ Co-doped Fluoroaluminophosphate Glass Fiber Materials (2021) (0)
- Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability (2022) (0)
- Surface state characterization methods for SiO2 on 4H-SiC (2003) (0)
- Rapid Electrical Detection of Hg(II) Ions with AlGaN/GaN High Electron Mobility Transistors (2007) (0)
- Novel Thermally Stable Contacts to GaN (2006) (0)
- P implantation –induced defects in ZnO (2012) (0)
- Ga2O3(Gd2O3) as a gate dielectric for GaAs MOSFETs (1998) (0)
- Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation (2015) (0)
- Thermal Stability of Transparent ITO/n-Ga2O3/n+-Ga2O3/ ITO Rectifiers (2021) (0)
- High volume UV LED performance testing. (2022) (0)
- Reliability Issues in AlGaN/GaN High Electron Mobility Transistors (2011) (0)
- A 21st Century Approach to Electronic Device Reliability (2013) (0)
- Dynamic Switching of 1.9 A /1.76 kV Forward Current NiO/β-Ga2O3 Rectifiers (2022) (0)
- Analytical Specificity and Microbial Interference Study of a 30-Second Quantitative SARS-CoV-2 Detection Biosensor System (2022) (0)
- Rapid Sars-Cov-2 Virus Detection Using Modular Transistor-Based Biosensor Platform with Disposable Test Strips (2021) (0)
- Ion Energy Dependence of Dry Etch Damage Depth in Ga2o3 Schottky Rectifiers (2023) (0)
- Recent and forthcoming publications in pss (2012) (0)
- GaN and ZnO-Based Sensors for Gas, Nuclear Materials and Chemical Detection (2007) (0)
- Metal contacts to Gallium Arsenide (1991) (0)
- A Pulsed Electrochemistry Readout IC for Single Transistor-based Biosensor (2020) (0)
- Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors (2011) (0)
- 30-Seconds Sars-Cov-2 Human Sample Diagnosis and Analytical Specificity Analysis Using Disposable Strips on a Metal-Oxide-Semiconductor Field-Effect Transistor Platform (2022) (0)
- Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS (2002) (0)
- Diffusion of Hydrogenin Semiconductors, and its Association with Defects and Impurities (1998) (0)
- Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage (2021) (0)
- Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform (2023) (0)
- Novel dry etch chemistries for InP and related compounds (1992) (0)
- Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions (2022) (0)
- (Invited) Fabrication and Characterization of High Power Ga2O3 Based Diodes (2020) (0)
- Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination (2004) (0)
- Fabrication and Characterization of Self-Aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors (2011) (0)
- High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges (2000) (0)
- A Two-Electrode, Double-Pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement (2020) (0)
- Breakdown in gallium oxide rectifiers—the role of edge termination and impact ionization (2020) (0)
- Detection of SARS Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors (2012) (0)
- Low Temperature Hydrothermal Growth of ZnO Nanorods and its Applications (2009) (0)
- Radiation damage in gallium oxide materials and devices (2020) (0)
- Effects of Ion-Irradiation and Hydrogenation on the Doping of InGaAIN Alloys (1993) (0)
- P-type Doping and Light Emitting Junction Formation in ZnO (2008) (0)
- Behavior of W and WSi x Contact Metallization on n- and p- Type GaN (1998) (0)
- Recovery in dc performance of off-state step-stressed AlGaN/GaN high electron mobility transistor with thermal annealing (2016) (0)
- Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors (2001) (0)
- Transition Metal Doped ZnO (2010) (0)
- Preface—JSS Focus Issue on Solid-State Materials and Devices for Biological and Medical Applications (2020) (0)
- Heterojunction Bipolar Transistors: Processing and Devices (1996) (0)
- Rapid Detection of Biotoxin and Pathogen, and Quick Identification of Ligand-Receptor Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors (2016) (0)
- 13.3 Aniosotropies of Nonpolar a-Plane GaN LEDs in Electrical and Optical Properties (2011) (0)
- Spin relaxation in InGaN/Ga(Mn)N quantum wells (2005) (0)
- Elucidation of dissociation constants and binding sites of antibody-antigen complex using AlGaN/GaN high electron mobility transistors (2012) (0)
- Investigation of the Current Stability of AlGaN/GaN High Electron Mobility Transistors in Various Liquid/Solid Interface On the Gate Area (2013) (0)
- Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) (2017) (0)
- Light-actuated water droplet motions on ZnO nanorods (2012) (0)
- Heavy Ion Irradiation Induced Failure of Gallium Nitride High Electron Mobility Transistors: Effects of In-situ Biasing (2023) (0)
- AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications (2010) (0)
- Demonstration of Hydrogen Effects on ZnO LEDs in Current-Voltage and Electroluminescence Characteristics (2008) (0)
- RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors (2000) (0)
- Irradiation effects on high aluminum content AlGaN channel devices (2020) (0)
- High-Density Plasma Etching of Group-III Nitride Films for Device Application (1999) (0)
- GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors (2013) (0)
- A Materials Investigation of Nickel Based Contacts to n-SiC Subjected to Operational Thermal Stresses Characteristic of High Power Switching (1999) (0)
- Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain (1998) (0)
- Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures (2006) (0)
- Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator (2006) (0)
- Sidewall Electrical Damage in β-Ga2O3 Rectifiers Exposed to Ga+ Focused Ion Beams (2023) (0)
- Wide Bandgap Semiconductor Nanowires for Sensing Applications (2007) (0)
- Color perceptibility and validity of silicon carbide-based protective coatings for dental ceramics. (2021) (0)
- Semiconductor (III-V) Thin Films: Plasma Etching (2016) (0)
- Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs (1991) (0)
- Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors (2022) (0)
- Back Cover: A facile method for flexible GaN‐based light‐emitting diodes (Phys. Status Solidi RRL 11/2012) (2012) (0)
- Simple fabrication of nanoporous films on ZnO for enhanced light emission (2007) (0)
- Band Alignment of Al2O3 on α-(AlxGa1-x)2O3 (2022) (0)
- NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV (2023) (0)
- Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. (2014) (0)
- ZnO Light-Emitting Diodes Simulation (2006) (0)
- The Effect of Amino Sugars on the Composition and Metabolism of a Microcosm Biofilm and the Cariogenic Potential against Teeth and Dental Materials (2022) (0)
- Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3 (2023) (0)
- 50 Symposia and Counting-A Personal View of Highlights from SOTAPOCS (2009) (0)
- Investigation of electrical and optical properties of ZnO thin films grown with O 2 /O (2008) (0)
- P-type Doping and Electroluminescence in ZnO Thin Films (2007) (0)
- Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors (2015) (0)
- Alternative Group V Sources for Metal Organic Molecular Beam Epitaxy (1992) (0)
- Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN (2022) (0)
- The Galvanic Effect of Titanium and Amalgam in the Oral Environment (2020) (0)
- Comparison of Multipolar Resonant-Cavity and Magnetic Mirror Microwave ECR Sources for dry Etching of III-V Semiconductors (1994) (0)
- Implant Doping and Isolation (1996) (0)
- Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC (2014) (0)
- Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes (2001) (0)
- GaAs(C)/InAs superlattices grown by MOMBE (1992) (0)
- Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress (2011) (0)
- Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3 (2023) (0)
- Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN (1996) (0)
- Radiation Damage in Emerging Ga2O3 Devices for Solar-Blind UV Detection and High Power Electronics (2018) (0)
- 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013 (2023) (0)
- High microwave power ECR etching of III-V semiconductors in CH{sub 4}/H{sub 2}/Ar (1996) (0)
- Biosensors Using Functionalized ZnO and GaN Surfaces (2009) (0)
- Bioafnity Sensors Based on MOS Field-Effect Transistors (2016) (0)
- The oxide/nitride interface: A study for gate dielectrics and field passivation (2003) (0)
- Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga2O3 Rectifiers (2023) (0)
- Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine (1991) (0)
- Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices (2020) (0)
- Band alignment of various dielectrics on Ga2O3, (Al xGa1−x)2O3, and (In xGa1−x)2O3 (2020) (0)
- (The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award) Wide Bandgap Semiconductors for Electronics, Photonics, and Sensing Applications (2011) (0)
- Room Temperature Deposited Enhancement Mode and Depletion Mode Indium Zinc Oxide Thin Film Transistors (2008) (0)
- Fracture of Lithia Disilicate Ceramics under Different Environmental Conditions (2022) (0)
- Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor (2011) (0)
- High temperature GaN based Schottky diode gas sensors (2003) (0)
- Simulation of ZnO-based UV and Visible Light-Emitting Diode Structures (2005) (0)
- Etching And Hydrogen Incorporation In ScAlMgO 4 (1997) (0)
- Dry Surface Cleaning of Plasma-Etched Hemts (1992) (0)
- Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN (2006) (0)
- WY 2000 ” Z 0397 ‘ 9 Device Characteristics of the ~ ( ? o GaAs / InGaAsN / GaAs PnP Double ~ + 4 Y ~ 0 LA Heterojunction Bipolar Transistor (2000) (0)
- Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures (2001) (0)
- Growth of MgCaO on GaN (2003) (0)
- 0.50 µm Direct Write Gate Lithography For Selectively Doped Heterostructure Transistor Devices (1988) (0)
- Novel Heterostructure Field Effect Transistors (1996) (0)
- Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifiers (2019) (0)
- A Novel Backside Gate Structure to Improve Device Performance (2015) (0)
- The Materials Properties of a Nickel Based Composite Contact to n -Sic for Pulsed Power Switching (2000) (0)
- Detection of Cl- Ions with AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- Formation of Long Wavelength InP Laser MESAS (1993) (0)
- Damage Introduction in Ingap and Aigaas by Electron Cyclotron Resonance ar Plasmas (1996) (0)
- 1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current (2010) (0)
- Structural Characterization of GaN Grown By Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE) (1994) (0)
- Growth of Scandium Magnesium Oxide on GaN (2003) (0)
- Schottky Barrier Enhancement on n‐Type GaAs by As Implantation (1990) (0)
- Finite difference analysis of thermal characteristics of continuous wave operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design (2002) (0)
- GaN High Power Devices (2000) (0)
- Wide-Bandgap Electronic Devices Chairs (2000) (0)
- Charge and Spin Doping in Epitaxial ZnO Thin Films and Nanostructures (2005) (0)
- DRY ETCHING AND IMPLANTATION CHARACTERISTICS OF AL0.5GA0.5P (1994) (0)
- 1.55 Vertical Cavity Surface Emitting Laser With Dielectric Mirrors (2005) (0)
- Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors (1992) (0)
- Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures (1992) (0)
- Deep traps and persistent photocapacitance in β-( Al 0 . 14 Ga 0 . 86 ) 2 O 3 / Ga 2 O 3 heterojunctions (2019) (0)
- Thermal stability of tungsten-based schottky contacts to N-type ZnO (2006) (0)
- Anisotropic Reactive Ion Etching of Submicron W Features In CF 4 or SF 6 Plasmas (1991) (0)
- ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices (2017) (0)
- Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors (2007) (0)
- Plasma-Enhanced Chemical Vapor Deposited SiNx and SiO2 Passivation Effects on ZnO Heterojunction Light Emitting Diodes (2008) (0)
- InN-Based Ohmic Contacts to AlInN (1996) (0)
- Preface—JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications (2017) (0)
- Optical Emission End-Point Detection for Via Hole Etching in InP and GaAs Power Device Structures (1993) (0)
- Symposium G : GaN and Related Alloys – G11.1 LUMINESCENCE FROM ERBIUM-DOPED GALLIUM NITRIDE THIN FILMS (1998) (0)
- (Invited) Fundamental Modeling of Radiation Effects in AlGaN/GaN HEMTs (2014) (0)
- GaN-Based Devices for Reliable Operation at Very High Temperatures (2006) (0)
- Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE (1991) (0)
- Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical Beam Epitaxy (1998) (0)
- Thermally Stable Boride Ohmic Contacts on n-ZnO (2006) (0)
- SiC Devices (2014) (0)
- c-erbB-2 Sensing Using AlGaN/GaN High Electron Mobility Transistors For Breast Cancer Detection (2009) (0)
- Radiation Effects in GaN-Based High Electron Mobility Transistors (2015) (0)
- The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors (2000) (0)
- High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes (2009) (0)
- Hydrothermally Grown ZnO Nanorods as Cell Adhesion Control Coating for Implant Devices (2009) (0)
- GaAs/AlGaAs quantum-dot near-field scanning optical spectroscopy (1995) (0)
- Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition (2000) (0)
- On spin injection in GaMnN/InGaN Light-Emitting Diodes (2004) (0)
- The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors (1994) (0)
- Charge and spin-based electronics using ZNO thin films (2004) (0)
- Hydrogen Detection by CVD-Graphene Coated with Pt Film (2011) (0)
- Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN (1999) (0)
- ZnO Nanowires for Gas and Bio-Chemical Sensing (2013) (0)
- Improved InGaAs Metal-Semiconductor-Metal OE Mixers Using Submicron Schottky Contacts (2004) (0)
- ZnO Nanorod Based Sensors (2016) (0)
- Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric (1999) (0)
- Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors (2000) (0)
- Si-Diffused Enhancement-Mode GaN MOSFET (2005) (0)
- Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers (1988) (0)
- Implant isolation and dry etching of InN (1994) (0)
- FETs on lattice-mismatched substrates: GaAs/InP and GaAs-AlGaAs/Si (1989) (0)
- Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors (2000) (0)
- Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs (1992) (0)
- Selective area processing of InGaAsP (1994) (0)
- Gordon E. Moore Award Presentation) Wide Bandgap Semiconductors for Sensing Applications (2013) (0)
- ResearchNitride Semiconductor 300 ° C GaN / AlGaN Heterojunction Bipolar Transistor (1999) (0)
- Effect of Downstream Plasma Exposure on Schottky Diodes Fabricated on β-Ga2O3 (2021) (0)
- Method for manufacturing gaas device, and device manufactured by the same (1992) (0)
- GaN power rectifiers and field-effect transistors on free-standing GaN substrates (2003) (0)
- Wet and Dry Etching of III-V Semiconductors (1996) (0)
- Effects of composition and layer thickness on the magnetic and structural characteristics of GaMnN (2003) (0)
- Wide bandgap nanowire sensors (2008) (0)
- (Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs (2016) (0)
- Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy (1990) (0)
- ZnO Thin Film and Nanowire Devices (2008) (0)
- Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs (2000) (0)
- Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor (2009) (0)
- Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions (1994) (0)
- Defects in N, O and N, Zn implanted ZnO single crystals. (2012) (0)
- A process for patterning of tungsten layers (1992) (0)
- Fully Planar Ion-Implanted 0.98 μm Strained Quantum Well Laser (1993) (0)
- Processing Room : B 1-Session EM-ThA Quantum Structures and Nitrides Devices (0)
- Substrate Effects on the Growth of InN (1997) (0)
- Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers (1990) (0)
- Selective etching method of aluminum gallium arsenide (1989) (0)
- HI/H 2 ECR Plasma Etching of III-V Semiconductors (1992) (0)
- Temperature Dependent Performance of GaN Schottky Diode Rectifiers (2000) (0)
- High Density Magnetically Confined Dry Etching of Metallization and Dielectrics in Gaas Device Technology (1994) (0)
- Precise tuning of the superconducting properties of Mn-doped Al films for transition edge sensors by ion-implantation (2020) (0)
- Mid-IR interband cascade light emitting diodes based on type-II quantum wells (1996) (0)
- Stable Contacts at High Temperature for GaN using Boride-Metal Scheme. (2005) (0)
- Novel oxides and reliability for the passivation of AlGaN/GaN high electron mobility transistor (2005) (0)
- A Novel Bi-Layer Photoresist T-Gate Technique To Reduce Gate Resistance. (1997) (0)
- Preface—JSS Focus Issue on Semiconductor-Based Sensors for Application to Vapors, Chemicals, Biological Species, and Medical Diagnosis (2018) (0)
- Surface conversion effects in plasma-damaged p-GaN (1999) (0)
- Thermal Stability of Ohmic Contacts to n-InxGa1−xN (1995) (0)
- Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO. (2004) (0)
- GaAs-based MOSFETs and methods for preparing (1998) (0)
- Investigation of electrical and optical properties of ZnO thin films grown with O 2 / O 3 gas mixture (0)
- Dry etching of InGaP and AlInP in CH4/H2/Ar (1996) (0)
- Properties of H, O and C in GaN (1996) (0)
- High-voltage high-current vertical geometry Ga2O3 rectifiers (2020) (0)
- Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C (2022) (0)
- Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications (1998) (0)
- Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors (1998) (0)
- AIGaAs/InGaAsN/G~ PnP Double Heterojunction Bipolar Transistor (2000) (0)
- GaN-based and ZnO nanorod sensors for wireless hydrogen leak detection (2006) (0)
- Growth and Properties of Semi‐Insulating InP Using Multi‐Frit Trichloride Vapor Phase Epitaxy (MTVPE) (1991) (0)
- Fast spin relaxation in InGaN/GaMnN spin LEDs : an obstacle to spin detection for future spintronics applications (2005) (0)
- Diodes 1 (2020) (0)
- Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures (1993) (0)
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