Frederick H. Pollak
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Physics
Frederick H. Pollak's Degrees
- PhD Physics Stanford University
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(Suggest an Edit or Addition)Frederick H. Pollak's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors (1972) (694)
- Piezo-Electroreflectance in Ge, GaAs, and Si (1968) (562)
- Electroreflectance at a Semiconductor-Electrolyte Interface (1965) (555)
- Raman scattering in alloy semiconductors: Spatial correlation model (1984) (425)
- Energy-Band Structure of Germanium and Silicon: The k [] p Method (1966) (403)
- Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation (1984) (356)
- Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices (1993) (319)
- Effect of static uniaxial stress on the Raman spectrum of silicon (1993) (308)
- Thermal conductivity of GaN films: Effects of impurities and dislocations (2002) (289)
- RAMAN SPECTROSCOPY AS A MORPHOLOGICAL PROBE FOR TIO2 AEROGELS (1997) (280)
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs (1977) (242)
- Raman scattering study of the properties and removal of excess Te on CdTe surfaces (1984) (203)
- Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon (1971) (155)
- Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing (1989) (137)
- Effect of dislocations on thermal conductivity of GaN layers (2001) (121)
- Low-Temperature Grown III-V Materials (1995) (110)
- Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy (2000) (110)
- Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x (1987) (106)
- Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study (1985) (105)
- High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence (2000) (95)
- TEMPERATURE DEPENDENCE OF THE ENERGIES AND BROADENING PARAMETERS OF THE INTERBAND EXCITONIC TRANSITIONS IN WURTZITE GAN (1997) (93)
- Intrinsic Piezobirefringence of Ge, Si, and GaAs (1969) (91)
- Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering (1984) (86)
- SPECTRAL ELLIPSOMETRY INVESTIGATION OF ZN0.53CD0.47SE LATTICE MATCHED TO INP (1997) (86)
- Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces (1992) (85)
- Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering (1977) (83)
- Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope (1998) (82)
- Optical properties of single-crystal rutile RuO2and IrO2in the range 0.5 to 9.5 eV (1981) (81)
- New normalization procedure for modulation spectroscopy (1987) (80)
- Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces (1991) (80)
- HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE (1999) (80)
- Novel contactless mode of electroreflectance (1991) (78)
- The surface structure of RuO2: A leed, auger and XPS study of the (110) and (100) faces (1988) (74)
- Mechanism of chlorine evolution on oxide anodes study of pH effects (1987) (72)
- Modulation spectroscopy under uniaxial stress (1973) (72)
- Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance (1990) (71)
- High spatial resolution thermal conductivity of bulk ZnO (0001) (2002) (71)
- Raman study of polish‐induced surface strain in 〈100〉 GaAs and InP (1984) (70)
- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory (1986) (69)
- Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scattering (1985) (66)
- Chapter 2 Effects of Homogeneous Strain on the Electronic and Vibrational Levels in Semiconductors (1990) (64)
- Single crystals as model electrocatalysts: Oxygen evolution on RuO2 (110) (1986) (63)
- Thermal conductivity of bulk ZnO after different thermal treatments (2006) (62)
- Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure (1997) (61)
- Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C (1988) (60)
- Effect of Crystallographic Orientation of Single‐Crystal RuO2 Electrodes on the Hydrogen Adsorption Reactions (1984) (55)
- Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency (1988) (54)
- Raman investigation of rutile RuO2 (1982) (53)
- Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling (2000) (53)
- Valence band symmetry and deformation potentials of ZnO (1968) (53)
- Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling (1999) (50)
- Energy-Band Structure and Optical Spectrum of Grey Tin (1970) (50)
- Modulation Spectroscopy Of Semiconductor Microstructures: An Overview (1988) (50)
- Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1991) (50)
- Semiconductors and Semimetals, Vol. 13 (Cadmium Telluride) (1978) (50)
- Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure (1992) (49)
- Atomic layer epitaxy of GaInP ordered alloy (1990) (48)
- Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP (1980) (47)
- Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells (1992) (47)
- Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures (1981) (47)
- Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se (2003) (45)
- Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy (2005) (45)
- Chlorine Evolution and Reduction Processes at Oriented Single‐Crystal RuO2 Electrodes (1986) (44)
- Study of semiconductor surfaces and interfaces using electromodulation (2001) (44)
- Calculation of the Γ-∆ Electron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon (1982) (44)
- Piezo-optical Evidence forΛTransitions at the 3.4-eV Optical Structure of Silicon (1972) (43)
- Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy (1985) (43)
- Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C (1990) (43)
- Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance (1998) (42)
- Growth and characterization of RuO2 single crystals (1982) (39)
- Optical study of amorphous MoS3: determination of the fundamental energy gap (1987) (39)
- Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width (1986) (39)
- Photoreflectance characterization of semiconductors and semiconductor heterostructures (1990) (38)
- MOSS-BURSTEIN AND PLASMA REFLECTION CHARACTERISTICS OF HEAVILY DOPED N-TYPE INXGA1-XAS AND INPYAS1-Y (1999) (38)
- Effect of Uniaxial Compression on Impurity Conduction in p -Germanium (1965) (38)
- Observation of excitonic features in {ZnSe}/{ZnMgSSe} multiple quantum wells by normalized Kelvin probe spectroscopy at low temperatures (1997) (37)
- Intrinsic Piezobirefringence in GaSb, InAs, and InSb (1971) (36)
- Raman Scattering in Gray Tin (1971) (36)
- Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:H (1980) (34)
- Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉 n‐GaAs (1985) (33)
- Spectral ellipsometry of GaSb: Experiment and modeling (1999) (33)
- Comprehensive investigation of polish‐induced surface strain in 〈100〉 and 〈111〉 GaAs and InP (1988) (32)
- Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system (1991) (32)
- Piezo-photoreflectance of the direct gaps of GaAs and Ga0.78Al0.22As (1990) (31)
- Energy band structure of germanium and gallium arsenide: The k.p method (1966) (31)
- Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence (2000) (31)
- In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces (1991) (31)
- Modulation spectroscopy of semiconductor microstructures (1991) (31)
- Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure (1992) (31)
- Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance (1994) (30)
- Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectance (1980) (29)
- The Potential of Zero Charge of Oriented Single‐Crystal RuO2 in Aqueous Electrolytes (1983) (29)
- Effects of uniaxial stress on excitons in Cu 2 O (1980) (29)
- Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study (1990) (29)
- Piezoelectroreflectance in GaAs. (1966) (29)
- Raman characterization of Hg1−xCdxTe and related materials (1985) (28)
- Deformation Potentials of the Indirect and Direct Absorption Edges of AlSb (1970) (28)
- Stress-Induced Exchange Splitting of Hyperbolic Excitons in GaAs. (1969) (28)
- Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance (1998) (28)
- Impurity conduction in silicon and effect of uniaxial compression on p-type Si (1984) (28)
- Electroreflectance and Spin-Orbit Splitting in III-V Semiconductors (1966) (28)
- Nature of band bending at semiconductor surfaces by contactless electroreflectance (1992) (28)
- Room-temperature photoreflectance characterization of pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the two-dimensional electron gas density (1993) (28)
- Irreversible Voltammetric Behavior of the (100) IrO2 Single‐Crystal Electrodes in Sulfuric Acid Medium (1985) (28)
- Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices (1987) (27)
- Quantum resonances in the valence band of zinc-blende semiconductors. II. Results for p -InSb under uniaxial stress (1979) (27)
- Modulation Spectroscopy As A Technique For Semiconductor Characterization (1981) (27)
- Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP (1983) (26)
- Burstein-Moss shift of n-doped In{sub 0.53}Ga{sub 0.47}As/InP (2001) (25)
- Raman Characterization Of Semiconductors Revisited (1984) (25)
- Single crystal RuO2 (110): Surface structure (1984) (24)
- Diagnostic techniques for semiconductor materials processing (1994) (24)
- Electroreflectance and band structure of gray tin (1966) (24)
- Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters (2000) (24)
- Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density (1994) (24)
- Electric field distributions in a molecular‐beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance (1989) (23)
- Electromodulation study of GaAs with excess arsenic (1992) (23)
- Contactless electroreflectance, in the range of 20 K (2003) (23)
- A new offset technique for suppression of spurious signals in photoreflectance spectra (1994) (23)
- Modulation spectroscopy in superlattices (1989) (22)
- Photoreflectance of GaAs doping superlattices (1986) (22)
- Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well (1986) (21)
- Variations in composition in binary and ternary semiconductors utilizing electrolyte electroreflectance: A topographical investigation (1978) (21)
- Relative intensities of indirect transitions: Electron-phonon and hole-phonon interaction matrix elements in Si (TO) and GaP (LA,TA) (1982) (21)
- AFM observation of surface activation of ruthenium oxide electrodes during hydrogen evolution (1997) (21)
- Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (1999) (21)
- Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure (1998) (21)
- Photoreflectance study of Fermi level changes in photowashed GaAs (1990) (20)
- Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1−xAs/GaAs heterostructures (1990) (20)
- Electroreflectance in AlSb: Observation of the Direct Band Edge (1966) (20)
- Resonance Raman scattering in Ti2O3 in the range 1.8–2.7 eV (1975) (18)
- Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures (1998) (18)
- Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures (1995) (18)
- Raman scattering from (110) Hg0.8Cd0.2Te. (1984) (18)
- Raman scattering in Hg0.8Cd0.2Te (1983) (18)
- Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well (1994) (18)
- Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures (2001) (17)
- Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures (1993) (17)
- Scanning tunneling microscopy of diamond-like nanocomposite films (1994) (17)
- Resonance Raman scattering in InAs near the E1 gap (1973) (17)
- Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N (1997) (17)
- Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures (1996) (17)
- Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy (1995) (17)
- Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor (1998) (16)
- Optical constants of In0.53Ga0.47As/InP: Experiment and modeling (2002) (16)
- Optical absorption by GAP states in hydrogenated amorphous silicon (1980) (16)
- Effect of the crystallographic surface structure of the RuO2 single crystals on the chlorine evolution/reduction reactions (1985) (16)
- Band structure of gallium arsenide: Spin-orbit splitting☆ (1965) (16)
- Photoreflectance study of strained (001) Si1−xGex/Si layers (1992) (16)
- Polarization-dependent reflectivity and optical constants of Ti 2 O 3 in the range 0.7-10 eV (1978) (15)
- Spectral ellipsometry of GaSb: Experiment and modelling (1999) (15)
- On the origin of Franz-Keldysh oscillations in AlGaAs/GaAs modulation-doped heterojunctions (1991) (15)
- Cyclic voltammetry on RuO2 (100), (101), (001) and (110) “as-grown” single-crystal surfaces (1983) (15)
- Variations in the carrier concentration in elemental and compound semiconductors utilizing electrolyte electroreflectance: A topographical investigation (1979) (15)
- Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity (1996) (15)
- Optical constants of cubic GaN/GaAs(001): Experiment and modeling (2003) (14)
- LASERS, OPTICS, AND OPTOELECTRONICS ÑPACS 42Ö 1859 Simulation of optical pulse propagation in a two-dimensional photonic crystal waveguide using a high accuracy finite-difference time-domain algorithm (2003) (14)
- Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures (1989) (14)
- Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1992) (14)
- Optical determination of Fermi-level pinning using electroreflectance (1981) (14)
- Excitation wavelength and pump chopping frequency dependence of photoreflectance in Hg1-xCdxTe (1988) (14)
- Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) (1997) (13)
- Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures (2001) (13)
- Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectance (1980) (13)
- Electroreflectance study of the dilure magnetic semiconductor alloy Hg1−xMnxTe (1981) (13)
- Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface (1982) (13)
- Local atomic structure at thermally grown Si/SiO2 interfaces (1989) (13)
- Optical constants of germanium and gray tin the . method (1967) (13)
- Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance (1981) (13)
- Current controlled liquid phase epitaxial growth of Hgl−xCdxTe (1980) (13)
- Stress Dependence of the E1 and E1 + Δ1 Transitions in InSb and GaSb (1970) (13)
- Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates (1990) (13)
- On the origins of the Franz–Keldysh oscillations observed in the electromodulation spectra of graded emitter Ga1−xAlxAs/GaAs heterojunction bipolar transistor structures (1998) (12)
- Measurement of absolute Al concentration in AlxGa1−xAs (1987) (12)
- Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system (1982) (12)
- Electroreflectance study of HgCdTe in the metal‐insulator‐semiconductor configuration at 77 K (1986) (12)
- Optical investigation of organometallic vapor phase epitaxially grown AlxGa1−xP (1988) (12)
- Modeling the Optical Constants of Diamond- and Zincblende-Type Semiconductors: Discrete and Continuum Exciton Effects at E0 and E1 (1999) (12)
- Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (2002) (11)
- The continuing drama of the semiconductor interface (1993) (11)
- Miniband dispersion of the confined and unconfined states of coupled multiple quantum wells (1988) (11)
- Positron annihilation studies of diamondlike nanocomposite films (1995) (11)
- Surface-induced optical anisotropy of the (001) and (113) silicon surfaces (1998) (11)
- Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films (2002) (11)
- Calculation of theΓ−Lelectron-phonon and hole-phonon scattering matrix elements in germanium (1982) (11)
- Low surface recombination velocity and contact resistance using p+/p carbon‐doped GaAs structures (1990) (10)
- Optical and electrical characterization of an AlGaAs/GaAs heterostructure (1993) (10)
- Resonance Raman-scattering study of narrow-gap Hg1-xCdxTe (1990) (10)
- Photoreflectance study of InxGa1-xAs/GaAs single quantum wells (1990) (10)
- Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser (1997) (10)
- Excitonic transitions in β-FeSi2 epitaxial films and single crystals (2004) (10)
- Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing (1997) (10)
- Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system (1987) (10)
- Atomic structure modifications of diamond-like nanocomposite films: Observation by Raman spectroscopy, FTIR and STM (1994) (10)
- Symmetry forbidden LO-phonon Raman scattering in heavily doped 〈1 0 0〉 n-GaAs (1987) (10)
- Piezospectroscopy of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates (1992) (10)
- Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition (1999) (10)
- Optical properties of quantum steps (1990) (10)
- Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence (2001) (10)
- Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si (1989) (10)
- Conclusive evidence for the excitonic nature of the E1-(E1+Δ1) optical structure in diamond- and zincblende-type semiconductors at room temperature☆ (1976) (9)
- External and/or Internal Stress Effects on the Optical Properties of Semiconductor Microstructures (1993) (9)
- Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures (1998) (9)
- Electrochemistry of sub-monolayer silver deposits on single crystal RuO2 (110), (001) and (111) electrodes (1987) (9)
- Variations in stoichiometry in Hg(1-x) Cd(x) Te using electrolyte electroreflectance: a topographical investigation. (1977) (9)
- Spectroscopic studies of strained-layer GaSbAlSb superlattices (1990) (9)
- Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures (2003) (9)
- Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells (1989) (9)
- Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: Generalized Van Vechten-Berolo-Woolley model (1983) (9)
- Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure (2002) (9)
- Photoreflectance study of the temperature dependence of the E1 transition in (100) CdTe (1989) (9)
- Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance (1998) (9)
- Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure (2003) (9)
- Effects of uniaxial stress on the Raman frequencies of Ti2O3 and Al2O3 (1975) (9)
- The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) (1991) (9)
- Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (1999) (9)
- Effects of Uniaxial Stress on the Free and Bound Exciton in GaSb at 1.7 °K (1971) (8)
- CHARACTERIZATION OF INGAASP/INP P-I-N SOLAR CELL STRUCTURES USING MODULATION SPECTROSCOPY AND SECONDARY ION MASS SPECTROMETRY (1999) (8)
- Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure (2002) (8)
- Band-to-band transitions and free exciton states in low-symmetry crystalline GaTe (1997) (8)
- Effects of Uniaxial Compression on the Zero-Bias Anomaly inp-Silicon Schottky-Barrier Tunnel Junctions (1972) (8)
- Optical properties of disordered silicon in the range 1–10 eV (1982) (8)
- Resonance Raman scattering under [111] uniaxial stress in the region of the E 1 gap in InAs (1974) (8)
- Atomic force microscopy study of diamond-like atomic-scale composite films (1997) (7)
- The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems (1981) (7)
- Photomodulation study of partially strained InxGa1-xAs layers (1993) (7)
- Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001) (1998) (7)
- Electroreflectance study of the temperature dependence of the E1 transition of Hg0.65Cd0.35Te (1989) (7)
- Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure (2002) (7)
- Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope (1999) (7)
- Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice (2001) (6)
- Intrinsic piezobirefringence of AlSb (1969) (6)
- Electroreflectance at a semiconductor-electrolyte interface: Infrared measurements☆ (1966) (6)
- In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance (1990) (6)
- Piezospectroscopy of a GaAs/Ga0.73Al0.27As single quantum well structure: Piezoelectric effects (1992) (6)
- Analyzing semiconductor devices using modulation spectroscopy (1994) (6)
- Optical and modulated optical investigation of the semiconductor-oxide-electrolyte interface in GaAs☆ (1980) (6)
- Nondestructive room-temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and surface photovoltage spectroscopy (2000) (6)
- Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy (2004) (6)
- Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well (1998) (6)
- Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch (1997) (6)
- Optical Properties and Model Density of States (1971) (6)
- Nondestructive characterization of Ga1−xAlxAs–GaAs interfaces using nuclear profiling (1981) (6)
- Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) (2002) (6)
- Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure (2003) (6)
- Physical Properties of Diamond-Like Nanocomposite Films (1994) (6)
- Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001) (2002) (5)
- Polish‐induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990) (5)
- Contactless electromodulation for in situ characterization of semiconductor processing (1993) (5)
- Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure (1999) (5)
- Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure (1999) (5)
- Piezospectroscopic determination of the ratio of the electron-phonon to hole-phonon scattering matrix elements for LA and TA phonons in GaP (1982) (5)
- Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy (1997) (5)
- Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure (2001) (5)
- Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures (2000) (5)
- Hole lifetimes in [001] uniaxial stressed GaAs (1993) (5)
- Chapter 4 - Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures (1998) (5)
- Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers (1996) (5)
- Electroreflectance and reflectance study of 2H-MoSe2 (1982) (5)
- ELECTROMODULATION SPECTROSCOPY OF SEMICONDUCTOR SURFACES AND INTERFACES (1995) (4)
- Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals (2001) (4)
- Effects of Strain on the Electronic and Vibrational Properties of Semiconductors and Semiconductor Microstructures (1995) (4)
- Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure (1995) (4)
- Selective area epitaxy of CdTe arrays (1997) (4)
- Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model System (1987) (4)
- Magnetic field-modulated magnetoreflectance in germanium at 1.7°K (1970) (4)
- Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy (1999) (4)
- Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system (1996) (4)
- Correlation Between Quantum Nanocrystal Particle Size and Photoluminescence Using Raman Scattering (1994) (4)
- Characterization of strain at Ga1−xAlxAs–GaAs interfaces using electrolyte electroreflectance (1980) (4)
- Exciton-Optical Phonon Interaction in Reduced Dimensional Systems: Temperature Dependence of the Linewidth (1993) (4)
- The Effect of Defects and Dopants on Thermal Conduction in GaN Films (2002) (4)
- Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures (1990) (4)
- Effect of uniaxial compression on impurity conduction in p-silicon (1967) (4)
- Piezoreflectance of strained Si/Ge superlattices grown on Ge(001) (1992) (4)
- Photoreflectance for the in-situ monitoring of semiconductor growth and processing (1991) (4)
- Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures (1994) (4)
- Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy (1994) (4)
- Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure (1995) (3)
- Study of the band offset in InxGa1-xAs/GaAs system using photoreflectance of single quantum wells (1990) (3)
- Photoreflectance Study of Modulation-Doped GaAs/GaAlAs Quantum Dots Fabricated by Reactive-Ion Etching (1993) (3)
- Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure (1995) (3)
- Photoreflectance study of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates (1994) (3)
- Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well (1996) (3)
- Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes (2001) (3)
- Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quamtum well structure (1994) (3)
- Modulation Spectroscopy Characterization of Semiconductor Heterostructures (1993) (3)
- Raman spectroscopy study of Al0.48In0.52As/InP (1987) (3)
- Piezo-spectroscopic determination of the ratio of electron—To phonon to hole—To phonon interaction in silicon (1978) (3)
- Room temperature polarized hotoreflectance characterization of GaAlAs/InGaAs high electron mobility transistor structures including the influence of strain relaxation (1999) (3)
- Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 324 (1994) (3)
- Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures (1996) (3)
- Optical and structural characterization of InAs/GaAs quantum wells (1991) (3)
- Raman Scattering Determination Of Carrier Concentration And Surface Space Charge Layer IN <100> n-GaAs (1985) (3)
- Electroreflectance study of RuSe2 (1990) (3)
- ELECTROLYTE ELECTROREFLECTANCE INVESTIGATION OF ION-DAMAGED LASER-ANNEALED SILICON (1980) (2)
- Response to “Comment on ‘Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling’ ” [J. Appl. Phys. 88, 2172 (2000)] (2000) (2)
- Study of the Potential Distribution at the Semiconductor-Electrolyte Interface in Regenerative Photoelectrochemical Solar Cells (1981) (2)
- Dislocation/grain boundary effects on the thermal conductivity of hydride vapor phase epitaxy grown GaN/sapphire (0001) (2000) (2)
- Optical constants of In 0.53 Ga 0.47 As'InP: Experiment and modeling (2002) (2)
- Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects (1992) (2)
- Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields (1996) (2)
- Characterization of semiconductor device structures using contactless electromodulation (1995) (2)
- Reflectivity, resonance Raman scattering, and energy level structure in Ti2O3 (1975) (2)
- Optical constants of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} lattice-matched to GaSb(001): Experiment and modeling (1999) (2)
- Pulse‐Stimulated Potentiostatic Deposition of Silver on Single Crystal RuO2 (110) Surface (1988) (2)
- Polarization dependent reflectivity and optical constants of single crystal rutile RuO2 in the range 0.5 to 9.5 eV (1981) (2)
- Characterization of semiconductor device structures by modulation spectroscopy (1994) (2)
- Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique (1992) (2)
- 7.2 – Modulation Spectroscopy (1992) (2)
- Spectroscopic Characterization Techniques for Semiconductor Technology III: 14-15 March 1988, Newport Beach, California (1988) (2)
- Piezo Electroreflectance in GaAs (1966) (2)
- CONTACTLESS ELECTROREFLECTANCE STUDY OF TEMPERATURE DEPENDENCE OF FUNDAMENTAL BAND GAP OF ZnSe (1995) (2)
- Atomic Force Microscopy Study of Stabilized Quasi-Amorphous Carbon in the Range of Thickness from 5 nm To 300 μm (1996) (2)
- THE STUDY OF PHASE TRANSITIONS BY RAMAN SPECTROSCOPY UNDER UNIAXIAL STRESS (1973) (1)
- Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium (1983) (1)
- Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon (1990) (1)
- Photoreflectance of a GaAs/In 0.5 Ga 0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy (1989) (1)
- Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes (1994) (1)
- Laser and Thermal Annealing Modification of Diamond-Like Atomic-Scale Composite Films Studied by Micro Raman Spectroscopy (1996) (1)
- Effects of uniaxial stress on the optical properties of GaAs and GaAs/Ga1−xAl1−x As single quantum wells grown on Si(001) substrates (1994) (1)
- Theoretical prediction of the plasma frequency and moss-burstein shifts for degenerately doped InAs, In1−xGaxAs and InP1−yAsy (1999) (1)
- Optical Determination of the Fundamental Energy Gap of Amorphous MoS3 (1987) (1)
- Spectroscopic characterization techniques for semiconductor technology II : January 21-22, 1985, Los Angeles, California (1985) (1)
- Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells (1990) (1)
- Photoreflectance and photoluminescence study of defect passivation by hydrogen in GaAlAs/GaAs/GaAs heterostructures (1990) (1)
- Comment on “Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe” [J. Appl. Phys. 87, 7360 (2000)] (2001) (1)
- Photoreflectance and Phototransmittance of Narrow Well Strained Layer InxGa1-xAs/GaAs Coupled Multiple Quantum Well Structures (1988) (1)
- Hg0.7Cd0.3Te/SiO2-Photox interface properties studied by photo- and bias-induced charging (1988) (1)
- Photoreflectance for in-situ monitoring of thin-film growth (1990) (1)
- Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots (2002) (1)
- Comment on `Modelling the optical constants of GaAs: excitonic effects at E1,E1 + Δ1 critical points' (2001) (1)
- Optical studies of anodic oxide films on GaAs using a rotating light-pipe reflectometer (1980) (1)
- Direct measurement of proton straggling in GaAlAs for nuclear profiling (1984) (1)
- Plasma-induced effects on the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/Sapphire (0001) (2000) (1)
- Two-dimensional electron gas effects in the electromodulation spectra from a pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well structure (1994) (1)
- Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAsGaAlAs multiple quantum wells (1988) (1)
- Nuclear Profiling Of Aluminum In GaAlAs/GaAs Heterostructures (1984) (1)
- Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor (1999) (1)
- Temperature dependence of the energy and broadening parameter of the fundamental band ga of GaSb and Ga (2000) (0)
- Contactless electromodulation for the characterization of semiconductor surfaces/interfaces (1994) (0)
- Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect (1992) (0)
- High Spatial Resolution Thermal Conductivity investigation of SiC Wafers (2001) (0)
- Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP (1985) (0)
- Growth and characterization of patterned ZnCdSe structures for application in integrated R-G-B II–VI light-emitting diodes (2000) (0)
- Raman Scattering in the Narrow Gap Alloy Hg1-XCdxTe (1985) (0)
- Spectroscopic characterization techniques for semiconductor technology : 9-10 November 1983, Cambridge, Massachusetts (1984) (0)
- Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well (1992) (0)
- A model of contextual activities and team performance (2004) (0)
- Optical Constants of GaInAsSb Lattice-matched to GaSb (001): Experiment and Modeling (2000) (0)
- Modulation spectroscopy study of an InGaAs/GaAs-strained asymmetric triangular quantum well heterostructure (1995) (0)
- Method and device for measuring material characteristic through light reflection method by use of improved computer system (1990) (0)
- The optical constants of n- and p-doped In{sub 0.66}Ga{sub 0.34}As on InP (001) including the Burstein-Moss shift: Experiment and modeling (1999) (0)
- Piezo-modulated spectroscopic investigation of N and N-N Pairs in GaP (1977) (0)
- Spatial Correlation Interpretation of Effects of As + Implantation on the Raman Spectra of GaAs (1983) (0)
- Optical and electrochemical investigation of ruthenium and iridium and their oxides in relation to their electrocatalytic activity. Final report (1986) (0)
- Contactless Electromodulation For The Non-destructive Characterization Of Semiconductor Devices (1992) (0)
- Electrolyte electroreflectance as a technique to study the semiconductor/electrolyte interface (1981) (0)
- EFFECT OF CRYSTALLOGRAPHIC ORIENTATION OF SINGLE-CRYSTAL RUTHENIUM DIOXIDE ELECTRODES ON THE HYDROGEN ADSORPTION REACTIONS (1985) (0)
- Spectral ellipsometry of GaSb and GaInAsSb: Experiment and modeling (1999) (0)
- High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells (1989) (0)
- Theoretical prediction of the plasma frequency and Moss-Burstein shifts for degenerately doped In{sub x}Ga{sub 1{minus}x}As (1998) (0)
- Spectral ellipsometry of GaSb and GaInAsSb/GaSb: experiment and modelling (1999) (0)
- Growth of Mercury Cadmium Telluride by Current Controlled Liquid Phase Epitaxy. (1979) (0)
- Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures (1999) (0)
- Growth and Homogeneity Characterization of Mercury Cadmium Telluride Crystals. (1979) (0)
- Optical Investigations of Semiconducting FeSi2 using Photoreflectance Spectroscopy (2005) (0)
- Diamond-like atomic-scale composite films: Surface properties and stability studied by STM and AFM (1995) (0)
- Ordered Ternary Alloys by Atomic Layer Epitaxy (1989) (0)
- Intervalley Electron-Phonon and Hole-Phonon Interactions in Semiconductors: Experiment and Theory (1985) (0)
- Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure (2000) (0)
- Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs (1987) (0)
- Pulse Stimulated Potentiostatic Deposition of Silver on Single Crystal RuO2(110) Surface. (1988) (0)
- Resonant Raman Scattering from Stress-Split Forbidden Excitons in Cu 2 O (1979) (0)
- Preface: phys. stat. sol. (a) 202/7 (2005) (0)
- Hard quasiamorphous carbon -- A prospective construction material for micro-electro-mechanical systems (1996) (0)
- Irreversible Voltammetric Behavior of the (100) IrO2Single-Crystal Electrodes in Sulfuric Acid Medium. (1986) (0)
- Minority-Carrier Diffusion Lengths in GaN Measured by the Surface Photovoltage Method (2004) (0)
- Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots (1994) (0)
- High sensitivity optical, modulated optical and Raman investigation of GaAs and its oxides (1983) (0)
- Picosecond Electron Thermalization In Biaxially Strained GaAs/AlGaAs Quantuin Well Grown On Si Substrate Under External Uniaxial Stress (1992) (0)
- Conversion and storage in electrochemical photovoltaic cells. Final report, 15 September 1979-15 January 1985 (1985) (0)
- Room Temperature Contactless Electroreflectance Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs GRINSCH Laser Structure (1997) (0)
- MODULATION SPECTROSCOPY OF REDUCED DIMENSIONAL SEMICONDUCTOR SYSTEMS (1995) (0)
- Oxygen and hydrogen evolution reaction on oriented single crystals of ruthenium dioxide (1979) (0)
- Characterization of P(L)ZT Ceramics by Modulated Optical Spectroscopy (1978) (0)
- Chlorine Evolution and Reduction Processes at Oriented Single-Crystal RuO2Electrodes. (1986) (0)
- for the ondestructive, oom-Temperature sis of ized Semiconductor Device Stru (1995) (0)
- Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors (1989) (0)
- HARD QUASIAMORPHOUS CARBONA PROSPECTIVE CONSTRUCT 10 Q MATERIAL FOR MICRO-ELECTRO-MECICAL SYSTEMS c (2008) (0)
- Surface and interface analysis of microelectronic materials processing and growth, 12-13 October 1989, Santa Clara, California (1990) (0)
- Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs hbts from the photovoltaic effect observed in contactless electroreflectance and photoreflectance (1997) (0)
- Piezo-Optical Determinations of Deformation Potentials Relevant to Transport Properties Calculations of Multivalley Semiconductors. (1976) (0)
- Spectral ellipsometry of Zn_0.53Cd_0.47Se lattice matched to InP (1997) (0)
- Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition (2003) (0)
- IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance (1990) (0)
- Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions (1990) (0)
- Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation (1988) (0)
- Preparation, Characterization and Performance of MoS3 as an Active Cathode Material (1989) (0)
- Quantum Wells: Intrinsic Optical Properties (1992) (0)
- The Electrochemistry of Sub‐Monolayer Silver Deposits on Single Crystal RuO2(110), ‐(001) and ‐(111) Electrodes (1988) (0)
- Luminescence from Semiconductor Quantum Wires, Quantum Dots, and Monolayer Quantum Wells: Bottleneck and Localization Issues (2021) (0)
- International Conference on Modulation Spectroscopy : 19-21 March 1990, San Diego, California (1990) (0)
- V-4 topographical investigation of variations of stoichiometry in Ga1-xAlxAs and carrier concentrations in GaAs using electroreflectance (1977) (0)
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