Frederick H. Pollak

Frederick H. Pollak's AcademicInfluence.com Rankings

Frederick H. Pollak

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Physics

Frederick H. Pollak's Degrees

PhD Physics Stanford University

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Frederick H. Pollak's Published Works

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Published Works

Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors (1972) (694)
Piezo-Electroreflectance in Ge, GaAs, and Si (1968) (562)
Electroreflectance at a Semiconductor-Electrolyte Interface (1965) (555)
Raman scattering in alloy semiconductors: Spatial correlation model (1984) (425)
Energy-Band Structure of Germanium and Silicon: The k [] p Method (1966) (403)
Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation (1984) (356)
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices (1993) (319)
Effect of static uniaxial stress on the Raman spectrum of silicon (1993) (308)
Thermal conductivity of GaN films: Effects of impurities and dislocations (2002) (289)
RAMAN SPECTROSCOPY AS A MORPHOLOGICAL PROBE FOR TIO2 AEROGELS (1997) (280)
Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs (1977) (242)
Raman scattering study of the properties and removal of excess Te on CdTe surfaces (1984) (203)
Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon (1971) (155)
Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing (1989) (137)
Effect of dislocations on thermal conductivity of GaN layers (2001) (121)
Low-Temperature Grown III-V Materials (1995) (110)
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy (2000) (110)
Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x (1987) (106)
Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study (1985) (105)
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence (2000) (95)
TEMPERATURE DEPENDENCE OF THE ENERGIES AND BROADENING PARAMETERS OF THE INTERBAND EXCITONIC TRANSITIONS IN WURTZITE GAN (1997) (93)
Intrinsic Piezobirefringence of Ge, Si, and GaAs (1969) (91)
Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering (1984) (86)
SPECTRAL ELLIPSOMETRY INVESTIGATION OF ZN0.53CD0.47SE LATTICE MATCHED TO INP (1997) (86)
Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces (1992) (85)
Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering (1977) (83)
Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope (1998) (82)
Optical properties of single-crystal rutile RuO2and IrO2in the range 0.5 to 9.5 eV (1981) (81)
New normalization procedure for modulation spectroscopy (1987) (80)
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces (1991) (80)
HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE (1999) (80)
Novel contactless mode of electroreflectance (1991) (78)
The surface structure of RuO2: A leed, auger and XPS study of the (110) and (100) faces (1988) (74)
Mechanism of chlorine evolution on oxide anodes study of pH effects (1987) (72)
Modulation spectroscopy under uniaxial stress (1973) (72)
Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance (1990) (71)
High spatial resolution thermal conductivity of bulk ZnO (0001) (2002) (71)
Raman study of polish‐induced surface strain in 〈100〉 GaAs and InP (1984) (70)
Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory (1986) (69)
Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scattering (1985) (66)
Chapter 2 Effects of Homogeneous Strain on the Electronic and Vibrational Levels in Semiconductors (1990) (64)
Single crystals as model electrocatalysts: Oxygen evolution on RuO2 (110) (1986) (63)
Thermal conductivity of bulk ZnO after different thermal treatments (2006) (62)
Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure (1997) (61)
Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C (1988) (60)
Effect of Crystallographic Orientation of Single‐Crystal RuO2 Electrodes on the Hydrogen Adsorption Reactions (1984) (55)
Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency (1988) (54)
Raman investigation of rutile RuO2 (1982) (53)
Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling (2000) (53)
Valence band symmetry and deformation potentials of ZnO (1968) (53)
Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling (1999) (50)
Energy-Band Structure and Optical Spectrum of Grey Tin (1970) (50)
Modulation Spectroscopy Of Semiconductor Microstructures: An Overview (1988) (50)
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1991) (50)
Semiconductors and Semimetals, Vol. 13 (Cadmium Telluride) (1978) (50)
Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure (1992) (49)
Atomic layer epitaxy of GaInP ordered alloy (1990) (48)
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP (1980) (47)
Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells (1992) (47)
Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures (1981) (47)
Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se (2003) (45)
Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy (2005) (45)
Chlorine Evolution and Reduction Processes at Oriented Single‐Crystal RuO2 Electrodes (1986) (44)
Study of semiconductor surfaces and interfaces using electromodulation (2001) (44)
Calculation of the Γ-∆ Electron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon (1982) (44)
Piezo-optical Evidence forΛTransitions at the 3.4-eV Optical Structure of Silicon (1972) (43)
Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy (1985) (43)
Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C (1990) (43)
Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance (1998) (42)
Growth and characterization of RuO2 single crystals (1982) (39)
Optical study of amorphous MoS3: determination of the fundamental energy gap (1987) (39)
Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width (1986) (39)
Photoreflectance characterization of semiconductors and semiconductor heterostructures (1990) (38)
MOSS-BURSTEIN AND PLASMA REFLECTION CHARACTERISTICS OF HEAVILY DOPED N-TYPE INXGA1-XAS AND INPYAS1-Y (1999) (38)
Effect of Uniaxial Compression on Impurity Conduction in p -Germanium (1965) (38)
Observation of excitonic features in {ZnSe}/{ZnMgSSe} multiple quantum wells by normalized Kelvin probe spectroscopy at low temperatures (1997) (37)
Intrinsic Piezobirefringence in GaSb, InAs, and InSb (1971) (36)
Raman Scattering in Gray Tin (1971) (36)
Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:H (1980) (34)
Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉 n‐GaAs (1985) (33)
Spectral ellipsometry of GaSb: Experiment and modeling (1999) (33)
Comprehensive investigation of polish‐induced surface strain in 〈100〉 and 〈111〉 GaAs and InP (1988) (32)
Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system (1991) (32)
Piezo-photoreflectance of the direct gaps of GaAs and Ga0.78Al0.22As (1990) (31)
Energy band structure of germanium and gallium arsenide: The k.p method (1966) (31)
Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence (2000) (31)
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces (1991) (31)
Modulation spectroscopy of semiconductor microstructures (1991) (31)
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure (1992) (31)
Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance (1994) (30)
Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectance (1980) (29)
The Potential of Zero Charge of Oriented Single‐Crystal RuO2 in Aqueous Electrolytes (1983) (29)
Effects of uniaxial stress on excitons in Cu 2 O (1980) (29)
Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study (1990) (29)
Piezoelectroreflectance in GaAs. (1966) (29)
Raman characterization of Hg1−xCdxTe and related materials (1985) (28)
Deformation Potentials of the Indirect and Direct Absorption Edges of AlSb (1970) (28)
Stress-Induced Exchange Splitting of Hyperbolic Excitons in GaAs. (1969) (28)
Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance (1998) (28)
Impurity conduction in silicon and effect of uniaxial compression on p-type Si (1984) (28)
Electroreflectance and Spin-Orbit Splitting in III-V Semiconductors (1966) (28)
Nature of band bending at semiconductor surfaces by contactless electroreflectance (1992) (28)
Room-temperature photoreflectance characterization of pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the two-dimensional electron gas density (1993) (28)
Irreversible Voltammetric Behavior of the (100) IrO2 Single‐Crystal Electrodes in Sulfuric Acid Medium (1985) (28)
Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices (1987) (27)
Quantum resonances in the valence band of zinc-blende semiconductors. II. Results for p -InSb under uniaxial stress (1979) (27)
Modulation Spectroscopy As A Technique For Semiconductor Characterization (1981) (27)
Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP (1983) (26)
Burstein-Moss shift of n-doped In{sub 0.53}Ga{sub 0.47}As/InP (2001) (25)
Raman Characterization Of Semiconductors Revisited (1984) (25)
Single crystal RuO2 (110): Surface structure (1984) (24)
Diagnostic techniques for semiconductor materials processing (1994) (24)
Electroreflectance and band structure of gray tin (1966) (24)
Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters (2000) (24)
Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density (1994) (24)
Electric field distributions in a molecular‐beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance (1989) (23)
Electromodulation study of GaAs with excess arsenic (1992) (23)
Contactless electroreflectance, in the range of 20 K (2003) (23)
A new offset technique for suppression of spurious signals in photoreflectance spectra (1994) (23)
Modulation spectroscopy in superlattices (1989) (22)
Photoreflectance of GaAs doping superlattices (1986) (22)
Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well (1986) (21)
Variations in composition in binary and ternary semiconductors utilizing electrolyte electroreflectance: A topographical investigation (1978) (21)
Relative intensities of indirect transitions: Electron-phonon and hole-phonon interaction matrix elements in Si (TO) and GaP (LA,TA) (1982) (21)
AFM observation of surface activation of ruthenium oxide electrodes during hydrogen evolution (1997) (21)
Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (1999) (21)
Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure (1998) (21)
Photoreflectance study of Fermi level changes in photowashed GaAs (1990) (20)
Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1−xAs/GaAs heterostructures (1990) (20)
Electroreflectance in AlSb: Observation of the Direct Band Edge (1966) (20)
Resonance Raman scattering in Ti2O3 in the range 1.8–2.7 eV (1975) (18)
Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures (1998) (18)
Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures (1995) (18)
Raman scattering from (110) Hg0.8Cd0.2Te. (1984) (18)
Raman scattering in Hg0.8Cd0.2Te (1983) (18)
Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well (1994) (18)
Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures (2001) (17)
Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures (1993) (17)
Scanning tunneling microscopy of diamond-like nanocomposite films (1994) (17)
Resonance Raman scattering in InAs near the E1 gap (1973) (17)
Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N (1997) (17)
Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures (1996) (17)
Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy (1995) (17)
Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor (1998) (16)
Optical constants of In0.53Ga0.47As/InP: Experiment and modeling (2002) (16)
Optical absorption by GAP states in hydrogenated amorphous silicon (1980) (16)
Effect of the crystallographic surface structure of the RuO2 single crystals on the chlorine evolution/reduction reactions (1985) (16)
Band structure of gallium arsenide: Spin-orbit splitting☆ (1965) (16)
Photoreflectance study of strained (001) Si1−xGex/Si layers (1992) (16)
Polarization-dependent reflectivity and optical constants of Ti 2 O 3 in the range 0.7-10 eV (1978) (15)
Spectral ellipsometry of GaSb: Experiment and modelling (1999) (15)
On the origin of Franz-Keldysh oscillations in AlGaAs/GaAs modulation-doped heterojunctions (1991) (15)
Cyclic voltammetry on RuO2 (100), (101), (001) and (110) “as-grown” single-crystal surfaces (1983) (15)
Variations in the carrier concentration in elemental and compound semiconductors utilizing electrolyte electroreflectance: A topographical investigation (1979) (15)
Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity (1996) (15)
Optical constants of cubic GaN/GaAs(001): Experiment and modeling (2003) (14)
LASERS, OPTICS, AND OPTOELECTRONICS ÑPACS 42Ö 1859 Simulation of optical pulse propagation in a two-dimensional photonic crystal waveguide using a high accuracy finite-difference time-domain algorithm (2003) (14)
Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures (1989) (14)
Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1992) (14)
Optical determination of Fermi-level pinning using electroreflectance (1981) (14)
Excitation wavelength and pump chopping frequency dependence of photoreflectance in Hg1-xCdxTe (1988) (14)
Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) (1997) (13)
Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures (2001) (13)
Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectance (1980) (13)
Electroreflectance study of the dilure magnetic semiconductor alloy Hg1−xMnxTe (1981) (13)
Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface (1982) (13)
Local atomic structure at thermally grown Si/SiO2 interfaces (1989) (13)
Optical constants of germanium and gray tin the . method (1967) (13)
Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance (1981) (13)
Current controlled liquid phase epitaxial growth of Hgl−xCdxTe (1980) (13)
Stress Dependence of the E1 and E1 + Δ1 Transitions in InSb and GaSb (1970) (13)
Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates (1990) (13)
On the origins of the Franz–Keldysh oscillations observed in the electromodulation spectra of graded emitter Ga1−xAlxAs/GaAs heterojunction bipolar transistor structures (1998) (12)
Measurement of absolute Al concentration in AlxGa1−xAs (1987) (12)
Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system (1982) (12)
Electroreflectance study of HgCdTe in the metal‐insulator‐semiconductor configuration at 77 K (1986) (12)
Optical investigation of organometallic vapor phase epitaxially grown AlxGa1−xP (1988) (12)
Modeling the Optical Constants of Diamond- and Zincblende-Type Semiconductors: Discrete and Continuum Exciton Effects at E0 and E1 (1999) (12)
Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (2002) (11)
The continuing drama of the semiconductor interface (1993) (11)
Miniband dispersion of the confined and unconfined states of coupled multiple quantum wells (1988) (11)
Positron annihilation studies of diamondlike nanocomposite films (1995) (11)
Surface-induced optical anisotropy of the (001) and (113) silicon surfaces (1998) (11)
Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films (2002) (11)
Calculation of theΓ−Lelectron-phonon and hole-phonon scattering matrix elements in germanium (1982) (11)
Low surface recombination velocity and contact resistance using p+/p carbon‐doped GaAs structures (1990) (10)
Optical and electrical characterization of an AlGaAs/GaAs heterostructure (1993) (10)
Resonance Raman-scattering study of narrow-gap Hg1-xCdxTe (1990) (10)
Photoreflectance study of InxGa1-xAs/GaAs single quantum wells (1990) (10)
Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser (1997) (10)
Excitonic transitions in β-FeSi2 epitaxial films and single crystals (2004) (10)
Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing (1997) (10)
Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system (1987) (10)
Atomic structure modifications of diamond-like nanocomposite films: Observation by Raman spectroscopy, FTIR and STM (1994) (10)
Symmetry forbidden LO-phonon Raman scattering in heavily doped 〈1 0 0〉 n-GaAs (1987) (10)
Piezospectroscopy of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates (1992) (10)
Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition (1999) (10)
Optical properties of quantum steps (1990) (10)
Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence (2001) (10)
Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si (1989) (10)
Conclusive evidence for the excitonic nature of the E1-(E1+Δ1) optical structure in diamond- and zincblende-type semiconductors at room temperature☆ (1976) (9)
External and/or Internal Stress Effects on the Optical Properties of Semiconductor Microstructures (1993) (9)
Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures (1998) (9)
Electrochemistry of sub-monolayer silver deposits on single crystal RuO2 (110), (001) and (111) electrodes (1987) (9)
Variations in stoichiometry in Hg(1-x) Cd(x) Te using electrolyte electroreflectance: a topographical investigation. (1977) (9)
Spectroscopic studies of strained-layer GaSbAlSb superlattices (1990) (9)
Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures (2003) (9)
Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells (1989) (9)
Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: Generalized Van Vechten-Berolo-Woolley model (1983) (9)
Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure (2002) (9)
Photoreflectance study of the temperature dependence of the E1 transition in (100) CdTe (1989) (9)
Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance (1998) (9)
Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure (2003) (9)
Effects of uniaxial stress on the Raman frequencies of Ti2O3 and Al2O3 (1975) (9)
The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) (1991) (9)
Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles (1999) (9)
Effects of Uniaxial Stress on the Free and Bound Exciton in GaSb at 1.7 °K (1971) (8)
CHARACTERIZATION OF INGAASP/INP P-I-N SOLAR CELL STRUCTURES USING MODULATION SPECTROSCOPY AND SECONDARY ION MASS SPECTROMETRY (1999) (8)
Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure (2002) (8)
Band-to-band transitions and free exciton states in low-symmetry crystalline GaTe (1997) (8)
Effects of Uniaxial Compression on the Zero-Bias Anomaly inp-Silicon Schottky-Barrier Tunnel Junctions (1972) (8)
Optical properties of disordered silicon in the range 1–10 eV (1982) (8)
Resonance Raman scattering under [111] uniaxial stress in the region of the E 1 gap in InAs (1974) (8)
Atomic force microscopy study of diamond-like atomic-scale composite films (1997) (7)
The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems (1981) (7)
Photomodulation study of partially strained InxGa1-xAs layers (1993) (7)
Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001) (1998) (7)
Electroreflectance study of the temperature dependence of the E1 transition of Hg0.65Cd0.35Te (1989) (7)
Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure (2002) (7)
Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope (1999) (7)
Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice (2001) (6)
Intrinsic piezobirefringence of AlSb (1969) (6)
Electroreflectance at a semiconductor-electrolyte interface: Infrared measurements☆ (1966) (6)
In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance (1990) (6)
Piezospectroscopy of a GaAs/Ga0.73Al0.27As single quantum well structure: Piezoelectric effects (1992) (6)
Analyzing semiconductor devices using modulation spectroscopy (1994) (6)
Optical and modulated optical investigation of the semiconductor-oxide-electrolyte interface in GaAs☆ (1980) (6)
Nondestructive room-temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and surface photovoltage spectroscopy (2000) (6)
Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy (2004) (6)
Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well (1998) (6)
Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch (1997) (6)
Optical Properties and Model Density of States (1971) (6)
Nondestructive characterization of Ga1−xAlxAs–GaAs interfaces using nuclear profiling (1981) (6)
Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) (2002) (6)
Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure (2003) (6)
Physical Properties of Diamond-Like Nanocomposite Films (1994) (6)
Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001) (2002) (5)
Polish‐induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990) (5)
Contactless electromodulation for in situ characterization of semiconductor processing (1993) (5)
Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure (1999) (5)
Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure (1999) (5)
Piezospectroscopic determination of the ratio of the electron-phonon to hole-phonon scattering matrix elements for LA and TA phonons in GaP (1982) (5)
Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy (1997) (5)
Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure (2001) (5)
Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures (2000) (5)
Hole lifetimes in [001] uniaxial stressed GaAs (1993) (5)
Chapter 4 - Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures (1998) (5)
Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers (1996) (5)
Electroreflectance and reflectance study of 2H-MoSe2 (1982) (5)
ELECTROMODULATION SPECTROSCOPY OF SEMICONDUCTOR SURFACES AND INTERFACES (1995) (4)
Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals (2001) (4)
Effects of Strain on the Electronic and Vibrational Properties of Semiconductors and Semiconductor Microstructures (1995) (4)
Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure (1995) (4)
Selective area epitaxy of CdTe arrays (1997) (4)
Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model System (1987) (4)
Magnetic field-modulated magnetoreflectance in germanium at 1.7°K (1970) (4)
Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy (1999) (4)
Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system (1996) (4)
Correlation Between Quantum Nanocrystal Particle Size and Photoluminescence Using Raman Scattering (1994) (4)
Characterization of strain at Ga1−xAlxAs–GaAs interfaces using electrolyte electroreflectance (1980) (4)
Exciton-Optical Phonon Interaction in Reduced Dimensional Systems: Temperature Dependence of the Linewidth (1993) (4)
The Effect of Defects and Dopants on Thermal Conduction in GaN Films (2002) (4)
Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures (1990) (4)
Effect of uniaxial compression on impurity conduction in p-silicon (1967) (4)
Piezoreflectance of strained Si/Ge superlattices grown on Ge(001) (1992) (4)
Photoreflectance for the in-situ monitoring of semiconductor growth and processing (1991) (4)
Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures (1994) (4)
Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy (1994) (4)
Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure (1995) (3)
Study of the band offset in InxGa1-xAs/GaAs system using photoreflectance of single quantum wells (1990) (3)
Photoreflectance Study of Modulation-Doped GaAs/GaAlAs Quantum Dots Fabricated by Reactive-Ion Etching (1993) (3)
Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure (1995) (3)
Photoreflectance study of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates (1994) (3)
Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well (1996) (3)
Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes (2001) (3)
Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quamtum well structure (1994) (3)
Modulation Spectroscopy Characterization of Semiconductor Heterostructures (1993) (3)
Raman spectroscopy study of Al0.48In0.52As/InP (1987) (3)
Piezo-spectroscopic determination of the ratio of electron—To phonon to hole—To phonon interaction in silicon (1978) (3)
Room temperature polarized hotoreflectance characterization of GaAlAs/InGaAs high electron mobility transistor structures including the influence of strain relaxation (1999) (3)
Diagnostic Techniques for Semiconductor Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 324 (1994) (3)
Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures (1996) (3)
Optical and structural characterization of InAs/GaAs quantum wells (1991) (3)
Raman Scattering Determination Of Carrier Concentration And Surface Space Charge Layer IN <100> n-GaAs (1985) (3)
Electroreflectance study of RuSe2 (1990) (3)
ELECTROLYTE ELECTROREFLECTANCE INVESTIGATION OF ION-DAMAGED LASER-ANNEALED SILICON (1980) (2)
Response to “Comment on ‘Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling’ ” [J. Appl. Phys. 88, 2172 (2000)] (2000) (2)
Study of the Potential Distribution at the Semiconductor-Electrolyte Interface in Regenerative Photoelectrochemical Solar Cells (1981) (2)
Dislocation/grain boundary effects on the thermal conductivity of hydride vapor phase epitaxy grown GaN/sapphire (0001) (2000) (2)
Optical constants of In 0.53 Ga 0.47 As'InP: Experiment and modeling (2002) (2)
Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects (1992) (2)
Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields (1996) (2)
Characterization of semiconductor device structures using contactless electromodulation (1995) (2)
Reflectivity, resonance Raman scattering, and energy level structure in Ti2O3 (1975) (2)
Optical constants of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} lattice-matched to GaSb(001): Experiment and modeling (1999) (2)
Pulse‐Stimulated Potentiostatic Deposition of Silver on Single Crystal RuO2 (110) Surface (1988) (2)
Polarization dependent reflectivity and optical constants of single crystal rutile RuO2 in the range 0.5 to 9.5 eV (1981) (2)
Characterization of semiconductor device structures by modulation spectroscopy (1994) (2)
Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique (1992) (2)
7.2 – Modulation Spectroscopy (1992) (2)
Spectroscopic Characterization Techniques for Semiconductor Technology III: 14-15 March 1988, Newport Beach, California (1988) (2)
Piezo Electroreflectance in GaAs (1966) (2)
CONTACTLESS ELECTROREFLECTANCE STUDY OF TEMPERATURE DEPENDENCE OF FUNDAMENTAL BAND GAP OF ZnSe (1995) (2)
Atomic Force Microscopy Study of Stabilized Quasi-Amorphous Carbon in the Range of Thickness from 5 nm To 300 μm (1996) (2)
THE STUDY OF PHASE TRANSITIONS BY RAMAN SPECTROSCOPY UNDER UNIAXIAL STRESS (1973) (1)
Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium (1983) (1)
Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon (1990) (1)
Photoreflectance of a GaAs/In 0.5 Ga 0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy (1989) (1)
Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes (1994) (1)
Laser and Thermal Annealing Modification of Diamond-Like Atomic-Scale Composite Films Studied by Micro Raman Spectroscopy (1996) (1)
Effects of uniaxial stress on the optical properties of GaAs and GaAs/Ga1−xAl1−x As single quantum wells grown on Si(001) substrates (1994) (1)
Theoretical prediction of the plasma frequency and moss-burstein shifts for degenerately doped InAs, In1−xGaxAs and InP1−yAsy (1999) (1)
Optical Determination of the Fundamental Energy Gap of Amorphous MoS3 (1987) (1)
Spectroscopic characterization techniques for semiconductor technology II : January 21-22, 1985, Los Angeles, California (1985) (1)
Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells (1990) (1)
Photoreflectance and photoluminescence study of defect passivation by hydrogen in GaAlAs/GaAs/GaAs heterostructures (1990) (1)
Comment on “Photoreflectance study in the E1 and E1+Δ1 transition regions of CdTe” [J. Appl. Phys. 87, 7360 (2000)] (2001) (1)
Photoreflectance and Phototransmittance of Narrow Well Strained Layer InxGa1-xAs/GaAs Coupled Multiple Quantum Well Structures (1988) (1)
Hg0.7Cd0.3Te/SiO2-Photox interface properties studied by photo- and bias-induced charging (1988) (1)
Photoreflectance for in-situ monitoring of thin-film growth (1990) (1)
Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots (2002) (1)
Comment on `Modelling the optical constants of GaAs: excitonic effects at E1,E1 + Δ1 critical points' (2001) (1)
Optical studies of anodic oxide films on GaAs using a rotating light-pipe reflectometer (1980) (1)
Direct measurement of proton straggling in GaAlAs for nuclear profiling (1984) (1)
Plasma-induced effects on the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/Sapphire (0001) (2000) (1)
Two-dimensional electron gas effects in the electromodulation spectra from a pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well structure (1994) (1)
Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAsGaAlAs multiple quantum wells (1988) (1)
Nuclear Profiling Of Aluminum In GaAlAs/GaAs Heterostructures (1984) (1)
Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor (1999) (1)
Temperature dependence of the energy and broadening parameter of the fundamental band ga of GaSb and Ga (2000) (0)
Contactless electromodulation for the characterization of semiconductor surfaces/interfaces (1994) (0)
Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect (1992) (0)
High Spatial Resolution Thermal Conductivity investigation of SiC Wafers (2001) (0)
Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP (1985) (0)
Growth and characterization of patterned ZnCdSe structures for application in integrated R-G-B II–VI light-emitting diodes (2000) (0)
Raman Scattering in the Narrow Gap Alloy Hg1-XCdxTe (1985) (0)
Spectroscopic characterization techniques for semiconductor technology : 9-10 November 1983, Cambridge, Massachusetts (1984) (0)
Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well (1992) (0)
A model of contextual activities and team performance (2004) (0)
Optical Constants of GaInAsSb Lattice-matched to GaSb (001): Experiment and Modeling (2000) (0)
Modulation spectroscopy study of an InGaAs/GaAs-strained asymmetric triangular quantum well heterostructure (1995) (0)
Method and device for measuring material characteristic through light reflection method by use of improved computer system (1990) (0)
The optical constants of n- and p-doped In{sub 0.66}Ga{sub 0.34}As on InP (001) including the Burstein-Moss shift: Experiment and modeling (1999) (0)
Piezo-modulated spectroscopic investigation of N and N-N Pairs in GaP (1977) (0)
Spatial Correlation Interpretation of Effects of As + Implantation on the Raman Spectra of GaAs (1983) (0)
Optical and electrochemical investigation of ruthenium and iridium and their oxides in relation to their electrocatalytic activity. Final report (1986) (0)
Contactless Electromodulation For The Non-destructive Characterization Of Semiconductor Devices (1992) (0)
Electrolyte electroreflectance as a technique to study the semiconductor/electrolyte interface (1981) (0)
EFFECT OF CRYSTALLOGRAPHIC ORIENTATION OF SINGLE-CRYSTAL RUTHENIUM DIOXIDE ELECTRODES ON THE HYDROGEN ADSORPTION REACTIONS (1985) (0)
Spectral ellipsometry of GaSb and GaInAsSb: Experiment and modeling (1999) (0)
High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells (1989) (0)
Theoretical prediction of the plasma frequency and Moss-Burstein shifts for degenerately doped In{sub x}Ga{sub 1{minus}x}As (1998) (0)
Spectral ellipsometry of GaSb and GaInAsSb/GaSb: experiment and modelling (1999) (0)
Growth of Mercury Cadmium Telluride by Current Controlled Liquid Phase Epitaxy. (1979) (0)
Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures (1999) (0)
Growth and Homogeneity Characterization of Mercury Cadmium Telluride Crystals. (1979) (0)
Optical Investigations of Semiconducting FeSi2 using Photoreflectance Spectroscopy (2005) (0)
Diamond-like atomic-scale composite films: Surface properties and stability studied by STM and AFM (1995) (0)
Ordered Ternary Alloys by Atomic Layer Epitaxy (1989) (0)
Intervalley Electron-Phonon and Hole-Phonon Interactions in Semiconductors: Experiment and Theory (1985) (0)
Surface photovoltage spectroscopy and contactless electroreflectance characterization of a GaInP/GaAs heterojunction bipolar transistor structure (2000) (0)
Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs (1987) (0)
Pulse Stimulated Potentiostatic Deposition of Silver on Single Crystal RuO2(110) Surface. (1988) (0)
Resonant Raman Scattering from Stress-Split Forbidden Excitons in Cu 2 O (1979) (0)
Preface: phys. stat. sol. (a) 202/7 (2005) (0)
Hard quasiamorphous carbon -- A prospective construction material for micro-electro-mechanical systems (1996) (0)
Irreversible Voltammetric Behavior of the (100) IrO2Single-Crystal Electrodes in Sulfuric Acid Medium. (1986) (0)
Minority-Carrier Diffusion Lengths in GaN Measured by the Surface Photovoltage Method (2004) (0)
Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots (1994) (0)
High sensitivity optical, modulated optical and Raman investigation of GaAs and its oxides (1983) (0)
Picosecond Electron Thermalization In Biaxially Strained GaAs/AlGaAs Quantuin Well Grown On Si Substrate Under External Uniaxial Stress (1992) (0)
Conversion and storage in electrochemical photovoltaic cells. Final report, 15 September 1979-15 January 1985 (1985) (0)
Room Temperature Contactless Electroreflectance Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs GRINSCH Laser Structure (1997) (0)
MODULATION SPECTROSCOPY OF REDUCED DIMENSIONAL SEMICONDUCTOR SYSTEMS (1995) (0)
Oxygen and hydrogen evolution reaction on oriented single crystals of ruthenium dioxide (1979) (0)
Characterization of P(L)ZT Ceramics by Modulated Optical Spectroscopy (1978) (0)
Chlorine Evolution and Reduction Processes at Oriented Single-Crystal RuO2Electrodes. (1986) (0)
for the ondestructive, oom-Temperature sis of ized Semiconductor Device Stru (1995) (0)
Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors (1989) (0)
HARD QUASIAMORPHOUS CARBONA PROSPECTIVE CONSTRUCT 10 Q MATERIAL FOR MICRO-ELECTRO-MECICAL SYSTEMS c (2008) (0)
Surface and interface analysis of microelectronic materials processing and growth, 12-13 October 1989, Santa Clara, California (1990) (0)
Contactless evaluation of the common-emitter current gain factor in GaAlAs/GaAs hbts from the photovoltaic effect observed in contactless electroreflectance and photoreflectance (1997) (0)
Piezo-Optical Determinations of Deformation Potentials Relevant to Transport Properties Calculations of Multivalley Semiconductors. (1976) (0)
Spectral ellipsometry of Zn_0.53Cd_0.47Se lattice matched to InP (1997) (0)
Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition (2003) (0)
IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance (1990) (0)
Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions (1990) (0)
Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation (1988) (0)
Preparation, Characterization and Performance of MoS3 as an Active Cathode Material (1989) (0)
Quantum Wells: Intrinsic Optical Properties (1992) (0)
The Electrochemistry of Sub‐Monolayer Silver Deposits on Single Crystal RuO2(110), ‐(001) and ‐(111) Electrodes (1988) (0)
Luminescence from Semiconductor Quantum Wires, Quantum Dots, and Monolayer Quantum Wells: Bottleneck and Localization Issues (2021) (0)
International Conference on Modulation Spectroscopy : 19-21 March 1990, San Diego, California (1990) (0)
V-4 topographical investigation of variations of stoichiometry in Ga1-xAlxAs and carrier concentrations in GaAs using electroreflectance (1977) (0)

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What Schools Are Affiliated With Frederick H. Pollak?

Frederick H. Pollak is affiliated with the following schools:

Brooklyn College
Clarkson University