Fumihiro Matsukura
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Physics
Fumihiro Matsukura's Degrees
- PhD Physics University of Tokyo
- Masters Physics University of Tokyo
- Bachelors Physics University of Tokyo
Why Is Fumihiro Matsukura Influential?
(Suggest an Edit or Addition)Fumihiro Matsukura's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010) (2699)
- Electrical spin injection in a ferromagnetic semiconductor heterostructure (1999) (2028)
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs (1996) (1918)
- Electric-field control of ferromagnetism (2000) (1679)
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature (2008) (1247)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors (2000) (1210)
- Transport properties and origin of ferromagnetism in (Ga,Mn)As (1998) (813)
- Control of magnetism by electric fields. (2015) (666)
- Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004) (586)
- Magnetization vector manipulation by electric fields (2008) (554)
- Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor (2003) (538)
- Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007) (432)
- Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures (2010) (396)
- SPIN RELAXATION IN GAAS(110) QUANTUM WELLS (1999) (330)
- Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction (2012) (321)
- Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier (2007) (300)
- High Mobility Thin Film Transistors with Transparent ZnO Channels (2003) (267)
- 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read (2008) (237)
- Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm (2014) (228)
- Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure (2012) (223)
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature (2005) (222)
- Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magn (2006) (207)
- Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in ( Ga 1 − x Mn x ) As (1999) (204)
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions (2005) (192)
- 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read (2007) (190)
- Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As. (2006) (187)
- Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As (2009) (184)
- Effect of low-temperature annealing on (Ga,Mn)As trilayer structures (2003) (180)
- Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001) (179)
- Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs (1997) (179)
- Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer (2006) (161)
- Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors. (2008) (153)
- Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO (2015) (147)
- Electric-field control of ferromagnetism in (Ga,Mn)As (2006) (141)
- Temperature dependent magnetic anisotropy in (Ga, Mn)As layers (2002) (140)
- A ferromagnetic III–V semiconductor: (Ga,Mn)As (2001) (139)
- Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions (2011) (133)
- Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers (1999) (128)
- Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs (1997) (128)
- Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998) (122)
- Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction. (2004) (121)
- Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures (2000) (120)
- Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer (2006) (118)
- MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers (2009) (118)
- Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy (2011) (116)
- MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis (2013) (112)
- Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain (2004) (111)
- Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier (2004) (105)
- Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure (2011) (103)
- Universality Classes for Domain Wall Motion in the Ferromagnetic Semiconductor (Ga,Mn)As (2007) (101)
- Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field (1999) (100)
- Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance (2014) (99)
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering (2005) (98)
- Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper (2013) (97)
- CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions (2012) (88)
- chapter 1 III-V Ferromagnetic Semiconductors (2002) (84)
- Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect (2014) (83)
- Current-Induced Magnetization Switching in MgO Barrier Magnetic Tunnel Junctions With CoFeB-Based Synthetic Ferrimagnetic Free Layers (2008) (81)
- Magnetotransport properties of (Ga, Mn)Sb (2000) (78)
- Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance (2013) (74)
- Ferromagnetism of magnetic semiconductors--Zhang-Rice limit (2001) (73)
- Domain-wall resistance in ferromagnetic (Ga,Mn)As. (2006) (70)
- Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb (2000) (70)
- Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance (2016) (69)
- Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) (1999) (67)
- Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As (2000) (66)
- Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO (2016) (65)
- Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission (2012) (64)
- RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI (2012) (63)
- PHASE TRANSITION IN THE NU = 2 BILAYER QUANTUM HALL STATE (1998) (62)
- Properties of Ga1−xMnxAs with high Mn composition (x>0.1) (2007) (62)
- Curie temperature versus hole concentration in field-effect structures of Ga 1 − x Mn x As (2010) (61)
- Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope (2000) (61)
- Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm (2013) (59)
- Spatially homogeneous ferromagnetism of (Ga, Mn)As. (2010) (57)
- Anomalous Hall effect in field-effect structures of (Ga,Mn)As. (2010) (56)
- Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As (2010) (54)
- Magnetic properties of (Al,Ga,Mn)As (2002) (54)
- Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate (2012) (52)
- Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions (2011) (51)
- Relaxation of photoinjected spins during drift transport in GaAs (2002) (50)
- In-plane magnetic field dependence of electric field-induced magnetization switching (2013) (50)
- Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers (2006) (49)
- Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions (2010) (49)
- INTEGRATED MICROMECHANICAL CANTILEVER MAGNETOMETRY OF GA1-XMNXAS (1999) (49)
- 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film. (2009) (48)
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers (2011) (45)
- Electrical spin injection in ferromagnetic//nonmagnetic semiconductor heterostructures (2001) (45)
- Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998) (44)
- Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells (2001) (44)
- InAs self-organized quantum dashes grown on GaAs (211)B (1997) (42)
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells (1999) (42)
- Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy (2010) (41)
- Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal (2015) (40)
- Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy (2017) (40)
- Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages (2014) (40)
- Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As (1999) (39)
- (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy (1997) (39)
- Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis (2014) (37)
- Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs (2001) (37)
- Temperature Peculiarities of Magnetic Anisotropy in (Ga,Mn)As: The Role of the Hole Concentration (2003) (36)
- Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system (2016) (36)
- Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance (2013) (35)
- III-V Ferromagnetic Semiconductors (2002) (35)
- Electron spin relaxation beyond D'yakonov–Perel’ interaction in GaAs/AlGaAs quantum wells (2000) (35)
- Control of Magnetism by Electric Fields (2015) (34)
- Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO (2013) (33)
- Electric double layer transistor with a (Ga,Mn)As channel (2010) (33)
- Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode (2006) (33)
- Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations (2018) (32)
- Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs (2013) (31)
- Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures (2001) (30)
- Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures (2012) (30)
- Current-Induced Effective Fields Detected by Magnetotrasport Measurements (2013) (29)
- Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm (2014) (29)
- Valence band barrier at (Ga,Mn)As/GaAs interfaces (2002) (29)
- Control of ferromagnetism in field-effect transistor of a magnetic semiconductor (2002) (28)
- Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs (1998) (28)
- Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer (2013) (26)
- Growth and properties of (Ga,Mn)As films with high Mn concentration (2001) (26)
- Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB (2016) (25)
- Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots (2001) (25)
- Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As. (2015) (24)
- DC voltages in Py and Py/Pt under ferromagnetic resonance (2013) (24)
- Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer (2014) (24)
- Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As (2016) (23)
- Semiconductor Spin Electronics (2001) (23)
- CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures (2015) (23)
- Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction (2005) (23)
- Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions (2006) (23)
- Ferromagnetic Semiconductor Heterostructures for Spintronics (2007) (23)
- Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes (2001) (23)
- Magnetic circular dichroism in Mn 2p core absorption of Ga1−xMnxAs (2001) (23)
- Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis (2015) (23)
- Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism (2003) (23)
- Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy (2002) (22)
- Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates (2001) (22)
- Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier (2009) (22)
- Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000) (20)
- Electric field control of thermal stability and magnetization switching in (Ga,Mn)As (2013) (19)
- Surfactant effect of Mn on the formation of self-organized InAs nanostructures (2000) (18)
- MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As (2000) (18)
- Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction (2017) (18)
- Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors (2006) (18)
- Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers (2017) (17)
- Molecular beam epitaxy of GaSb with high concentration of Mn (2000) (16)
- Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs (1998) (16)
- Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor (1997) (16)
- Microscopic identification of dopant atoms in Mn-doped GaAs layers (2002) (15)
- Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr (2017) (15)
- Properties of Ga1−xMnxAs with high x (>0.1) (2008) (15)
- Electrical magnetization reversal in ferromagnetic III–V semiconductors (2006) (15)
- Electric Field Effect on Magnetization of an Fe Ultrathin Film (2012) (14)
- Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions (2001) (14)
- Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study (1998) (14)
- Ferromagnetism Induced by Free Carriers in P-Type Structures of Diluted Magnetic Semiconductors (2000) (13)
- Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions (2015) (13)
- Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction (2015) (13)
- Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures (2011) (13)
- Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo) (2016) (13)
- Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates (2017) (13)
- Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface (2000) (13)
- Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures (1997) (13)
- Electrically defined ferromagnetic nanodots. (2010) (12)
- Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis (2016) (12)
- Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures (2011) (12)
- Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film (2010) (11)
- Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance (2016) (11)
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B (1997) (11)
- CoFeB/MgO based perpendicular magnetic tunnel junctions with stepped structure for symmetrizing different retention times of “0” and “1” information (2011) (11)
- CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio (2009) (11)
- Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque (2014) (10)
- Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells (2000) (10)
- Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As (1998) (10)
- Ferromagnetic (Ga, Mn)As and its heterostructures (1998) (10)
- Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates (1998) (10)
- Growth and properties of (Ga, Mn)As on Si (100) substrate (2002) (10)
- Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures (2001) (10)
- Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO (2017) (10)
- Domain wall creep in (Ga,Mn)As (2010) (10)
- Hall Effect and Magnetoresistance in P-Type Ferromagnetic Semiconductors (2003) (9)
- ac-Susceptibility study of Ising spin glasses: FexTiS2 (1989) (9)
- Anomalous stability of ν = 1 bilayer quantum Hall state (1997) (8)
- Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields (2011) (8)
- Spin Freezing Properties of an Ising Spin Glass Fe0.05TiS2 in Zero and Non-Zero Magnetic Fields (1994) (8)
- InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates (1999) (8)
- Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As (1998) (8)
- Control of magnetization reversal in ferromagnetic semiconductors by electrical means (2004) (7)
- A Ferromagnetic III-V Semiconductor: (Ga,Mn)As (2001) (7)
- Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure (2013) (7)
- Electric field dependence of intersubband transitions in single quantum wells (1997) (7)
- Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy (2016) (7)
- Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li (2016) (7)
- MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability (2014) (7)
- Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses (2015) (6)
- Domain wall resistance in perpendicularly magnetized (Ga,Mn)As (2007) (6)
- Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction (2006) (6)
- Spin degree of freedom in ferromagnetic semiconductor heterostructures (2003) (5)
- Spin Relaxation Times of an Ising Spin Glass Fe 0.05 TiS 2 (1991) (5)
- Effect of substrate temperature on the properties of heavily Mn-doped GaAs (2007) (5)
- Ferromagnetic resonance spectra of Py deposited on (Bi1-xSbx)2Te3 (2017) (5)
- Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis (2016) (5)
- 2Mb SPRAM Design: Bi-Directional Current Write and Parallelizing-Direction Current Read Schemes Based on Spin-Transfer Torque Switching (2007) (5)
- Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200 (2008) (5)
- Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction (2006) (5)
- Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions (2017) (5)
- Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures (2001) (5)
- In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis (2015) (4)
- Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures (2006) (4)
- Chapter 5 Spintronic Properties of Ferromagnetic Semiconductors (2008) (4)
- Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction (2019) (4)
- Magnetotransport Properties of (Ga,Mn)As/GaAs/(Ga,Mn)As Trilayer Structures (1999) (4)
- Phase Transition in the ν = 2 Bilayer Quantum (1998) (4)
- Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions (2007) (4)
- Electrical Manipulation of Magnetization Reversal in a (2003) (4)
- Interlayer Coherence in the $\nu=1$ and $\nu=2$ Bilayer Quantum Hall States (1998) (4)
- Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers (2014) (3)
- Inverse spin Hall effect in Pt/(Ga,Mn)As (2015) (3)
- Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy (2015) (3)
- Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718 (2016) (3)
- Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1−xSbx)2Te3 (2018) (3)
- Distribution of spin relaxation times in an Ising spin glass Fe0.05TiS2 (1996) (3)
- Electric-field modulation of exchange stiffness in MgO/CoFeB with perpendicular anisotropy (2016) (3)
- Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate (2015) (2)
- Magnetotransport properties of all semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As tri-layer structures (1998) (2)
- Giant tunneling magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junction with a synthetic ferrimagnetic pin layer annealed at and above 400ǬC (2006) (2)
- Interlayer quantum coherence and anomalous stability of ν=1 bilayer quantum Hall state (1998) (2)
- X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy (1999) (2)
- Magnetic properties of FeV/MgO-based structures (2017) (2)
- Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy (2000) (2)
- Experimental Investigation of Ferromagnetism in II–VI Disordered Semiconducting Compounds (2003) (2)
- Electric-field effect on magnetic moments in Co ultra-thin films deposited on Pt (2021) (2)
- CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy for CMOS Logic Integration (2010) (2)
- Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates (2000) (2)
- Phase Transition in the n 5 2 Bilayer Quantum Hall State (1998) (2)
- Chapter 7 – III–V-Based Ferromagnetic Semiconductors (2009) (2)
- Electric Field-Induced Magnetization Switching in CoFeB-MgO—Static Magnetic Field Angle Dependence (2014) (2)
- Transparent ZnO-based ohmic contact to p-GaN (2001) (2)
- Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures (2007) (2)
- Can ZnO Eat Market in Optoelectronic Applications (2000) (2)
- Electrical Electron Spin Injection with a p+-(Ga,Mn)As/n+-GaAs Tunnel Junction (2003) (2)
- 2‐Mb SPRAM design: bi‐directional current write and parallelizing‐direction current read based on spin‐transfer torque switching (2007) (2)
- Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires (2010) (1)
- Cyclotron resonance in Cd1–xFexS and Ga1–xMnxAs at megagauss magnetic fields (1998) (1)
- Well-width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers (1998) (1)
- Electric-Field Controlled Magnetism (2019) (1)
- Spin relaxations in an Ising spin glass Fe0.2TiS2 (1990) (1)
- Properties of (Ga,Mn)As codoped with Li (2014) (1)
- Spin-Polarized Current Injection in Ferromagnetic Semiconductor Heterostructure (2000) (1)
- Magnetic domain structures of (Ga,Mn)As investigated by scanning Hall probe microscopy (2000) (1)
- 15 – Magnetic Semiconductors (2015) (1)
- Ballistic spin injection spectroscopy of a (Ga,Mn)As spin Esaki diode (2006) (1)
- Valence-band electronic structure of (Ga,Mn)As studied by high-resolution ARPES (2016) (0)
- Ga1-xCrxAs: conductivity (2011) (0)
- In 1–x Mn x As: carrier concentration, mobility (2010) (0)
- In 1-x Mn x Sb: magnetic phases, Curie temperature, magnetic anisotropy (2010) (0)
- Magnetic Domain Wall Dynamics in ( Ga , Mn ) A s (2008) (0)
- Spin‐Dependent Phenomena in Ferromagnetic/Nonmagnetic III—V Heterostructures (2001) (0)
- ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect (2009) (0)
- Switching current and thermal stability of Perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm (2014) (0)
- Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)] (2013) (0)
- Ferromagnetic Semiconductors as Spintronics Materials (2014) (0)
- Ga1–xCrxAs: conductivity, carrier concentration (2010) (0)
- 29p-ZE-3 Domain obsarvation of diluted magnetic semi-conductor(Ga, Mn)As by Scanning Hall Probe Microscope (1999) (0)
- Ga 1-x Cr x Sb: conductivity, magnetoresistance, Hall resistivity (2010) (0)
- Al 1–x Mn x As: magnetic phases (2011) (0)
- Al1–xMnxAs: resistance (2010) (0)
- Sputtering condition dependence of spin-orbit torque induced magnetization reversal in W/CoFeB/MgO heterostructure (2016) (0)
- Probing and controlling spin-relaxation in GaAs quantum wells (2001) (0)
- Thermal fluctuation in electric-field induced magnetization switching in CoFeB/MgO magnetic tunnel junctions observed by transmitted voltage (2017) (0)
- 垂直容易軸のCoFeB‐MgO磁気トンネル接合をスイッチングするスピン‐伝達‐トルク‐誘発磁化の分解分解測定 (2017) (0)
- Ga1–xFexAs: crystal structure, lattice parameter (2010) (0)
- Dissipationless anomalous transport properties and Mott relation in Ga$_{1-x}$Mn$_{x}$As (2008) (0)
- Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions (2007) (0)
- Electric-field effect on domain structure in MgO/CoFeB/Ta (2016) (0)
- Ga1-xCrxSb: crystal structure (2011) (0)
- Dependence of switching properties of CoFeB-MgO based magnetic tunnel junctions on insertion layer material (2016) (0)
- In 1–x Mn x Sb: conductivity, Hall resistivity (2010) (0)
- In 1-x Mn x Sb: spin polarization, conductivity (2011) (0)
- In 1–x Mn x Sb: crystal structure, lattice parameter (2010) (0)
- ISSCC 2007 / 1 SESSION 261 Z NON-VOLATILE MEMORIES ! 1 265 26 . 5 2 Mb Spin-Transfer Torque RAM (0)
- Magnetic-field-angle dependence of coercivity in a nanoscale CoFeB-MgO magnetic tunnel junction with perpendicular easy axis at various temperatures (2017) (0)
- Magnetic Properties of III–V Ferromagnetic Semiconductor (Ga,Mn)As (2002) (0)
- In1–xMnxAs: direct gap, effective masses (2010) (0)
- Ga 1-x Fe x As: conductivity, mobility, magnetoresistance (2011) (0)
- Ga1–xMnxAs: exchange integrals, Curie temperature, magnetic anisotropy (2010) (0)
- Magnetization dynamics and related phenomena in semiconductors with ferromagnetism (2019) (0)
- Anomalous Hall Effect and Anomalous Nernst Effect in Ga1-xMnxAs (2007) (0)
- Spin relaxation of Ising spin glass Fe_xTiS_2 (II) (1990) (0)
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs (1998) (0)
- Semiconductor Spin Electronics General Report (0)
- Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime (1998) (0)
- Ga 1–x Cr x As: Curie temperature, magnetic circular dichroism (2010) (0)
- Ja n 19 98 Phase Transition in ν = 2 Bilayer Quantum Hall State (2021) (0)
- III—V‐Based Ferromagnetic Semiconductors (2010) (0)
- Priority communication Surfactant e!ect of Mn on the formation of self-organized InAs nanostructures (2000) (0)
- Magnetic Domain Wall Dynamics in (Ga,Mn)As (Invited) (2008) (0)
- Ga1-xCrxAs: band structure, density of states (2011) (0)
- Ga 1-x Cr x Sb: crystal structure (2010) (0)
- Ju l 2 00 0 Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors (1952) (0)
- In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis (2014) (0)
- In 1–x Mn x As: conductivity, magnetoresistance, Hall resistivity (2010) (0)
- Cross-sectional scanning tunneling microscope (STM) study of Mn-doped GaAs layers (2001) (0)
- Electric‐Field Modulation of Curie Temperature in (Ga, Mn)As Field‐Effect Transistor Structures with Varying Channel Thickness and Mn Compositions (2010) (0)
- In 1–x Mn x Sb: spin polarization (2010) (0)
- Ga 1-x Cr x Sb: magnetic phases (2011) (0)
- Electric-field effect on stiffness constant investigated by spin-wave resonance in nanoscale MgO/CoFeB magnetic tunnel junctions (2017) (0)
- In 1–x Mn x As: magnetic circular dichroism (2010) (0)
- Spin control and spin coherence in semiconductors (2001) (0)
- Time-resolved measurement of spin-transfer-torque-induced magnetization switching in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis (2017) (0)
- Far infrared absorption spectra in ferromagnetic Ga1-x Mn x As (2001) (0)
- Ga 1-x Mn x As: magnetic circular dichroism, Verdet constant (2010) (0)
- Ga 1–x Mn x As: band structure, direct energy gap (2010) (0)
- Dependence of TMR Ratio on CoFeB Ferromagnetic Electrode Thickness for MgO Barrier Magnetic Tunnel Junctions (2007) (0)
- CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance (2009) (0)
- ν=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well (1998) (0)
- Electrical Control of the Magnetic Properties in (Ga,Mn)As Channel in Electric Double Layer Transistor (2009) (0)
- Ga 1-x Mn x Sb: Curie temperature, magnetic anisotropy (2010) (0)
- Ga 1-x Cr x As: crystal structure, lattice parameter (2010) (0)
- Ga 1–x Mn x As: conductivity, resistivity, magnetoresistance, Hall effect (2010) (0)
- Spin-orbit torque induced magnetization switching in W/CoFeB/MgO (2016) (0)
- C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates (2000) (0)
- Ga 1–x Fe x As: conductivity, magnetoresistance (2010) (0)
- Transport : Nanoelectronics II-Spintronics and Magnetotransport (2009) (0)
- ZnO Metal-Insulator-Semiconductor Field-Effect-Transistors (2003) (0)
- Spin Polarization Dependent Far Infrared Absorption in Ga_ Mn_xAs : Semiconductors (2001) (0)
- 8p-N-12 Anomalous Stability of ν=1 Bilayer Quantum Hall State (II) (1997) (0)
- Ga 1-x Cr x As: magnetic phases, Curie temperature, magnetic circular dichroism (2011) (0)
- In 1–x Mn x As: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy-->In 1–x Mn x As: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy (2010) (0)
- Al1-xMnxAs: magnetic phases (2010) (0)
- New “coherent” bilayer quantum Hall states (1999) (0)
- Electric-field induced magnetization switching in CoFeB/MgO magnetic tunnel junction with thick MgO barrier (2016) (0)
- Ga 1–x Fe x As: magnetization (2010) (0)
- Junction size dependence of damping constans in nanoscale CoFEB/MgO magnetic tunnel junctions (2017) (0)
- Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors: Mn composition dependence (2007) (0)
- Molecular beam epitaxy of III–V ferromagnetic semiconductors (2013) (0)
- Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems (1998) (0)
- Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits (2009) (0)
- Ga 1-x Mn x As: spin polarization (2010) (0)
- Interband Faraday Rotation in Ferromagnetic Semiconductor (Ga, Mn)As (1997) (0)
- Electrical magnetization reversal in ferromagnetic semiconductors (2004) (0)
- Bilayer /ν=2 quantum Hall state in parallel high magnetic field (2000) (0)
- 0 10 92 45 v 1 1 3 Se p 20 01 Ferromagnetism of magnetic semiconductors — Zhang-Rice limit (0)
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What Schools Are Affiliated With Fumihiro Matsukura?
Fumihiro Matsukura is affiliated with the following schools:
