Gerald Lucovsky
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Physics
Gerald Lucovsky's Degrees
- PhD Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
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(Suggest an Edit or Addition)Gerald Lucovsky's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition (1986) (708)
- Structural interpretation of the vibrational spectra of a-Si: H alloys (1979) (638)
- Raman scattering characterization of carbon bonding in diamond and diamondlike thin films (1988) (626)
- Chemical effects on the frequencies of Si-H vibrations in amorphous solids (1979) (497)
- Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping. (2006) (437)
- Longitudinal Optical Vibrations in Glasses: GeO 2 and SiO 2 (1976) (396)
- Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemGe1−xSx (1974) (378)
- Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films (1983) (365)
- The Physics of Hydrogenated Amorphous Silicon I (1984) (342)
- Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy (1987) (335)
- Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry (2002) (311)
- Identification of the fundamental vibrational modes of trigonal, α - monoclinic and amorphous selenium (1967) (311)
- On the photoionization of deep impurity centers in semiconductors (1993) (266)
- The effects of valency on transport properties in vitreous binary alloys of selenium (1970) (257)
- Photoeffects in Nonuniformly Irradiated p‐n Junctions (1960) (215)
- Infrared active optical vibrations of graphite (1977) (213)
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition (1986) (208)
- Hydrogen localization near boron in silicon (1985) (208)
- Defects in plasma-deposited a-Si: H (1979) (204)
- Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors (1973) (183)
- A molecular model for the vibrational modes in chalcogenide glasses (1972) (175)
- Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition (2001) (171)
- Modeled tunnel currents for high dielectric constant dielectrics (1998) (167)
- Hydrogen bonding in silicon-hydrogen alloys (1978) (165)
- Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys (2000) (160)
- Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics (1999) (159)
- Nitrogen-bonding environments in glow-discharge—deposited a − Si : H films (1983) (158)
- Transit-time considerations in p-i-n diodes. (1964) (158)
- Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma‐enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor (1990) (153)
- Vibrational spectra and the structure of pure vitreous B 2 O 3 (1980) (149)
- Intermolecular bonding and lattice dynamics of Se and Te (1976) (148)
- Self-organization and the physics of glassy networks (2005) (147)
- Infrared-Reflectance Spectra of Layered Group-IV and Group-VI Transition-Metal Dichalcogenides (1973) (144)
- Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation (1987) (143)
- Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5. (2006) (142)
- Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing (1989) (137)
- Spectroscopic evidence for valence-alternation-pair defect states in vitreous SiO2 (1979) (134)
- Localized Effective Charges in Diatomic Crystals (1971) (133)
- Band alignment between (100)Si and complex rare earth∕transition metal oxides (2004) (133)
- Optic Modes in Amorphous As 2 S 3 and As 2 Se 3 (1972) (124)
- Infrared Reflection Spectra ofGa1−xInxAs: A New Type of Mixed-Crystal Behavior (1968) (116)
- Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process (1992) (115)
- Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy (1999) (113)
- Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide (1989) (111)
- Optical properties and electronic structure of crossroads material MnTe (1977) (107)
- First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors (1977) (107)
- Total-dose radiation response of hafnium-silicate capacitors (2002) (105)
- Study of the optic modes of Ge 0.30 S 0.70 glass by infrared and Raman spectroscopy (1974) (104)
- Vibrational properties of glasses: Intermediate range order (1983) (102)
- Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2 (1980) (102)
- Optical phonon anisotropies in the layer crystals SnS 2 and SnSe 2 (1976) (98)
- Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy (1999) (96)
- Extension of a Linear Diatomic-Chain Model for the Calculation of Local-Mode Frequencies in Real Crystals (1970) (93)
- Phonons in polysilane alloys (1982) (91)
- Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition (1998) (91)
- Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices (1998) (91)
- Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) (2003) (87)
- Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon (2004) (86)
- Controlled nitrogen incorporation at the gate oxide surface (1995) (83)
- Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films (2002) (83)
- Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing (1996) (80)
- Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor deposition (1995) (80)
- Optical probes of the lattice dynamics of graphite (1977) (80)
- Issues in High-ĸ Gate Stack Interfaces (2002) (80)
- Band offset measurements of the Si3N4/GaN (0001) interface (2003) (79)
- Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si (1990) (77)
- Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition (1987) (75)
- Coordination dependent vibrational properties of amorphous semiconductors alloys (1975) (73)
- Band offset measurements of the GaN (0001)/HfO2 interface (2003) (73)
- Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition (1994) (71)
- Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics (2001) (71)
- Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices (1985) (70)
- Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity (2001) (67)
- Infra-red lattice bands of trigonal tellurium and selenium☆ (1967) (66)
- Long wave optical phonons in the alloy systems: Ga1−xInxAs, GaAs1−xSbx and InAs1−xSbx (1970) (66)
- Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability (1999) (66)
- Ultrathin oxide-nitride gate dielectric MOSFET's (1998) (64)
- Electronic structure of noncrystalline transition metal silicate and aluminate alloys (2001) (64)
- Hydrogen in amorphous semiconductors (1980) (64)
- Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect (2005) (64)
- Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) (2004) (63)
- Spectroscopic study of chemical phase separation in zirconium silicate alloys (2003) (63)
- Infrared Reflectivity Spectra of the Mixed Crystal SystemGa1−xInxSb (1970) (62)
- Intermediate range order in amorphous solids (1980) (62)
- Chemical states study of Si in SiOx films grown by PECVD (1986) (61)
- Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked (1999) (60)
- Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H‐terminated Si surfaces (1994) (59)
- Local bonding analysis of the valence and conduction band features of TiO2 (2007) (59)
- Long-Wavelength Optical Phonons in Ga1-xInxP (1971) (59)
- Vibrational spectroscopy of hydrogenated amorphous silicon alloys (1980) (58)
- Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides (2006) (58)
- H loss mechanism during anneal of silicon nitride: Chemical dissociation (2000) (56)
- A study of chemical bonding in suboxides of silicon using Auger electron spectroscopy (1986) (56)
- Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy films (1985) (56)
- Local structure and vibrational spectra of vAs2O3 (1980) (55)
- Comments on the structure of chalcogenide glasses from infrared spectroscopy (1969) (55)
- Nitrogen bonding, stability, and transport in AlON films on Si (2004) (54)
- The frequency response of avalanching photodiodes (1966) (54)
- Optical properties of the mixed amorphous system As2SxSe3-x (1967) (53)
- Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing (1999) (52)
- The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing (2000) (52)
- Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor deposition (1989) (52)
- Silicon nitride and silicon diimide grown by remote plasma enhanced chemical vapor deposition (1986) (51)
- Electronic states at the interface of Ti–Si oxide on Si(100) (2002) (51)
- Relation of Si–H vibrational frequencies to surface bonding geometry (1979) (51)
- Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation (2002) (51)
- Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure (2006) (50)
- A novel approach for determining the effective tunneling mass of electrons in HfO 2 and other high- K alternative gate dielectrics for advanced CMOS devices (2004) (50)
- Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys (2002) (49)
- Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition (1993) (48)
- Average energy gaps in the binary glass-alloy systems: Ge 1-x Se x and As 1-x Se x (1977) (48)
- A chemical bonding model for the native oxides of the III–V compound semiconductors (1981) (47)
- High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films (1983) (46)
- Suppression of antiferroelectricity in TiSe2 by excess carriers (1977) (46)
- Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process (1998) (46)
- Charge redistribution at GaN–Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces (2000) (46)
- Edge absorption and photoluminescence in closely compensated GaAs (1965) (45)
- Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams (1987) (45)
- Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride (2001) (45)
- Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces (1993) (45)
- Structural models for amorphous semiconductors and insulators (1978) (43)
- Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO2 matrix (1998) (43)
- A structural interpretation of the infrared absorption spectra of a-Si:H:O alloys (1982) (43)
- Lattice Vibrations in Trigonal HgS (1970) (42)
- Raman and infrared spectra of vitreous As 2 O 3 (1979) (42)
- Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition (1990) (42)
- Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications (2002) (42)
- Nitrogen‐atom incorporation at Si–SiO2 interfaces by a low‐temperature (300 °C), pre‐deposition, remote‐plasma oxidation using N2O (1995) (42)
- New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing (2000) (41)
- Infrared absorption in bulk amorphous As (1974) (41)
- A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys (2001) (41)
- Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation (2002) (41)
- Reflectivity studies of Ti- and Ta-dichalcogenides: Phonons (1976) (41)
- Coherent light detection in solid-state photodiodes (1963) (40)
- Optical emission and mass spectroscopic studies of the gas phase during the deposition of SiO2 and a‐Si:H by remote plasma‐enhanced chemical vapor deposition (1989) (40)
- Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films (2004) (40)
- Study of the long-wavelength optic phonons in Ga 1 − x Al x Sb (1975) (40)
- Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs) (1998) (40)
- High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films (1984) (40)
- Radiation effects in new materials for nano-devices (2011) (39)
- Near neighbor chemical bonding effects on Si atom native bonding defects in silicon nitride and silicon dioxide insulators (1985) (39)
- The lattice polarizability of PbI2 (1976) (39)
- Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films (1989) (39)
- Ionicity effects on defects in chalcogenide alloys (1979) (39)
- Interface instabilities and electronic properties of ZrO2 on silicon (100) (2004) (39)
- Local bonding of oxygen and hydrogen in a-Si:H:O thin films (1983) (39)
- Native oxide formation on CdTe (1988) (38)
- Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys (2001) (38)
- Paramagnetic centres associated with bonding defects in v-SiO2 (1980) (38)
- Thermal evolution and electrical correlation of defect states in Hf-based high-κ dielectrics on n-type Ge (100): Local atomic bonding symmetry (2009) (38)
- Defect-controlled carrier transport in amorphous SiO2 (1979) (38)
- Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? (2002) (38)
- Deposition of single phase, homogeneous silicon oxynitride by remote plasma‐enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices (1994) (38)
- Formation of device-quality metal-insulator-semiconductor structures with oxide-nitride-oxide dielectrics by low-temperature plasma-assisted processing, combined with high-temperature rapid thermal annealing (1993) (38)
- The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor deposition (1989) (37)
- The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices (2000) (37)
- Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si–SiO2 interfaces (1998) (37)
- Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si–O–F alloy films (1997) (37)
- Thermal stabilization of device quality films deposited at low temperatures (1990) (36)
- Spectroscopic evidence for bonding coordination defects in amorphous as (1978) (36)
- Intrinsic localized defect states in a-Se associated with dihedral angle distortions (1987) (35)
- Minimization of suboxide transition regions at Si–SiO2 interfaces by 900 °C rapid thermal annealing (1997) (35)
- Selenium, the Amorphous and Liquid States (1979) (34)
- COUPLED ELECTRON-HOLE DYNAMICS AT THE SI/SIO2 INTERFACE (1998) (34)
- Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition (1988) (34)
- Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon (1998) (34)
- Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes (2002) (33)
- Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics (1999) (33)
- Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers (1998) (33)
- A comparison of the long wave optical phonons in trigonal Se and trigonal Te (1972) (33)
- Jahn–Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects (2007) (33)
- Specification of medium range order in amorphous materials (1987) (33)
- Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition (1999) (32)
- Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex Oxides (2004) (32)
- Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices (2001) (32)
- Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor (2002) (32)
- Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing (1998) (31)
- Defect properties of Si‐, O‐, N‐, and H‐atoms at Si—SiO2 interfaces (1996) (31)
- Hydrogen bonding arrangements at Si–SiO2 interfaces (1995) (31)
- IV-2 – Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (1991) (31)
- ABSORPTION EDGE MEASUREMENTS IN COMPENSATED GaAs (1964) (31)
- Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces (1999) (30)
- Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD) (1987) (30)
- Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes (1993) (30)
- Infra-red studies of TiSe2: IR phonons and free carriers (1979) (30)
- Soft x-ray photoelectron spectroscopy of (HfO2)x(SiO2)1−x high-k gate-dielectric structures (2003) (29)
- Short-range order in amorphous semiconductors (1979) (29)
- Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces (1999) (29)
- Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices (2002) (29)
- Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-K dielectric interfaces (2000) (29)
- Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2 (1990) (28)
- Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition (1988) (28)
- Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a‐Si:H (1993) (28)
- Chemical bonding and structure in layered transition metal dichalcogenides (1972) (28)
- Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process (1992) (27)
- Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics (1999) (27)
- Reaction pathways in remote plasma nitridation of ultrathin SiO2 films (2002) (27)
- Optical and electrical studies of Ti- and Ta-dichalcogenides: Plasmons (1976) (26)
- Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics (2005) (26)
- Spectroscopic studies of metal high‐k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides (2004) (26)
- IR absorption in glow-discharge-deposited a − S i : ( D , O ) and a − S i : ( D , N ) alloy films (1984) (26)
- Infrared-active phonons inCr2O3 (1977) (25)
- Local atomic structure of silicon suboxides (SiOx, x < 2) (1985) (25)
- Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces (1999) (25)
- Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (2006) (25)
- An application of the statistical shift model to the inverted Meyer-Neldel, MN, relationship in heavily-doped microcrystalline Si, μc-Si (1993) (24)
- Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD) (1989) (24)
- Local atomic order in native III–V oxides (1980) (24)
- Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates (2006) (24)
- Chemical Bonding of Alloy Atoms in Amorphous Silicon (1981) (24)
- Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H) (1989) (24)
- Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects (2003) (24)
- Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics (2004) (23)
- Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics (2004) (23)
- Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics (2000) (23)
- Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates (2008) (23)
- Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century (1999) (23)
- Low-temperature Ar/N2 remote plasma nitridation of SiO2 thin films (2002) (23)
- Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 (2006) (23)
- Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness (2000) (23)
- Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation (2004) (23)
- Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD) (1987) (22)
- Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process (2004) (22)
- ir reflectance spectra of Ti 2 O 3 : Infrared-active phonons and Ti 3 d electronic effects (1977) (22)
- High Frequency Photodiodes (1965) (22)
- EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5 (2007) (22)
- Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition (1988) (22)
- Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers (1993) (22)
- Heterointerface dipoles: Applications to (a) Si–SiO2, (b) nitrided Si–N–SiO2, and (c) SiC–SiO2 interfaces (1998) (22)
- X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions (2004) (22)
- Intimate valence alternation pairs in amorphous SiO2 (1980) (21)
- Device-Quality SiO2/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon Process (1992) (21)
- Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures (2005) (21)
- Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices (2007) (21)
- Optical-phonon anisotropies in layered crystals (1977) (21)
- The Raman and infrared spectra of vitreous BeF2 (1978) (21)
- 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process (2000) (20)
- Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces (2002) (20)
- Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices (2003) (20)
- Reliability of nitrided Si–SiO2 interfaces formed by a new, low‐temperature, remote‐plasma process (1995) (20)
- The preparation of microcrystalline silicon (μc‐Si) thin films by remote plasma‐enhanced chemical vapor deposition (1991) (20)
- Origins of silicon solar cell passivation by SiNx:H anneal (2002) (20)
- The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO 2 -SiO 2 Alloys (2000) (20)
- Directional dispersion of extraordinary optical phonons in α-quartz in the frequency domain from 380 to 640cm−1 (1970) (20)
- Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications (2010) (20)
- Optical second harmonic generation: A probe of atomic structure and bonding at Si–SiO2 interfaces, and other chemically modified Si surfaces (1994) (20)
- Mechanism of H2 desorption from monohydride Si(100)2 × 1H (1993) (20)
- Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition (1989) (19)
- The effects of chemical bonding and band offset constraints at Si-Dielectric interfaces on the integration of alternative high-k dielectrics into aggressively-scaled CMOS Si devices (1999) (19)
- Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material (1990) (19)
- Long-wavelength optic phonons inGa1−xAlxP (1976) (19)
- EXAFS study of amorphous Ge2Sb2Te5 (2006) (19)
- Effects of NH3 and N2 source gases and plasma excitation frequencies on the reaction chemistry for Si3N4 thin‐film growth by remote plasma‐enhanced chemical‐vapor deposition (1992) (19)
- Bonding of oxygen and nitrogen atoms in hydrogenated amorphous silicon alloys (1995) (19)
- Plasma-assisted formation of low defect density SiC–SiO2 interfaces (1997) (19)
- Hydrogen in amorphous silicon: local bonding and vibrational properties (1992) (18)
- Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3 (2003) (18)
- Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H (1984) (18)
- Ultrafast recombination and trapping in amorphous silicon (1989) (18)
- Effects of Acceptor Concentration Gradients in GaAs Junctions on the Energy of the Fluorescence Peak (1964) (18)
- Integration of ultrathin (1.6/spl sim/2.0 nm) RPECVD oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs (1999) (17)
- Preparation of device‐quality SiO2 thin films by remote plasma‐enhanced chemical vapour deposition (PECVD): Applications in metal‐oxide‐semiconductor (MOS) devices (1996) (17)
- Infra-red effective charges for amorphous, monoclinic and trigonal Se (1985) (17)
- Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures (1987) (17)
- Growth kinetics and characterizations of gallium nitride thin films by remote PECVD (1993) (17)
- Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5 (2011) (17)
- Avalanche multiplication in InAs photodiodes (1965) (17)
- Control of bonded-hydrogen in plasma-deposited silicon nitrides : combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics (1995) (17)
- Planar magnetron sputtering of a‐Si:H and a‐Ge:H thin films (1984) (17)
- Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices (1999) (17)
- RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p‐n JUNCTIONS (1963) (17)
- Rapid Thermal Annealing of Low Temperature Silicon Dioxide Films (1987) (16)
- Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates (2009) (16)
- Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates (2008) (16)
- Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides (1999) (16)
- Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces (1997) (16)
- Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors (2007) (16)
- An XPS study of sputtered a‐Si,Ge alloys (1982) (16)
- Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides (1999) (15)
- Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices (2002) (15)
- Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature (1989) (15)
- Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH -Based Cleaning for High-k ∕ Ge MOS Gate Stacks (2009) (15)
- Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si–SiO2 interface (2004) (15)
- Monolayer incorporation of nitrogen at Si–SiO2 interfaces: Interface characterization and electrical properties (1998) (15)
- Coupled local mode vibrations in a‐Si alloy films (1984) (15)
- Deposition of a‐Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets (1986) (15)
- Post‐deposition relaxation of electronic defects in hydrogenated amorphous silicon (1990) (15)
- Charge redistribution at GaN-Ga 2 O 3 interfaces: a microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces (1999) (15)
- Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements (1998) (14)
- Spectroscopic evidence for a network structure in plasma-deposited Ta2O5 films for microelectronic applications (2001) (14)
- Effect of rf power on remote-plasma deposited SiO2 films (1993) (14)
- Nonlinear optical spectroscopy of Si–heterostructure interfaces (1996) (14)
- Gaussian impurity bands in GaAs (1965) (14)
- Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks (2009) (14)
- Transport and Microstructure of Microcrystalline Silicon Alloys (1992) (14)
- Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition (1991) (14)
- Improvement of gate dielectric reliability for p/sup +/ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides (1998) (14)
- Experimental determination of band offset energies between Zr silicate alloy dielectrics and crystalline Si substrates by XAS, XPS and AES and ab initio theory: a new approach to the compositional dependence of direct tunneling currents (2002) (14)
- Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory (2007) (13)
- Thermal stability of plasma-nitrided aluminum oxide films on Si (2004) (13)
- Study of the optic phonons in the III-V quaternary alloy system: Ga 1 − x Al x As 1 − y P y by the average t -matrix approximation (1975) (13)
- Integrated processing of amorphous and microcrystalline Si thin film transistors by plasma-assisted chemical-vapor deposition (1994) (13)
- Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks (2008) (13)
- Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation (1997) (13)
- Annealing study of the infrared absorption in an amorphous silicon dioxide film (1989) (13)
- Nearest-neighbor repulsion-perturbed silicon monohydride bond-stretching vibrations in hydrogenated and deuterated silicon nitrogen alloy films (1996) (13)
- Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures (2004) (13)
- Local atomic structure at thermally grown Si/SiO2 interfaces (1989) (13)
- Intermediate range order in amorphous selenium: A novel approach based on IR absorption (1985) (13)
- Chemical and physical limits on the performance of metal silicate high-k gate dielectrics (2001) (13)
- Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3 (2009) (13)
- Differences between direct and remote plasma enhanced CVD (1987) (13)
- The effect of post-deposition thermal processing on MOS gate oxides formed by remote PECVD (1990) (12)
- Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers (1998) (12)
- A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism (2007) (12)
- Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state (2010) (12)
- Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations (1998) (12)
- Barrier Properties of Inorganic-Organic Polymers (1998) (12)
- The Effects of Intrinsic In-Plane Stress on the Local Atomic Structure of Thermally Grown SiO 2 (1988) (12)
- Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices (2001) (12)
- Bond strain and defects at Si–SiO2 and internal dielectric interfaces in high-k gate stacks (2004) (12)
- Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films (1992) (12)
- Defect states in HfO2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates (2009) (12)
- Optical Lattice Modes of Mixed Polar Crystals (1968) (12)
- A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopies (1985) (12)
- Precursors for the deposition of amorphous silicon–hydrogen alloys by remote plasma enhanced chemical vapor deposition (1989) (12)
- Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories (2008) (12)
- Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO 2 ) 1 -(SiO 2 ) 1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics (1999) (12)
- Thin films of a‐Si1−xGex:H alloys by dual magnetron sputtering in a UHV chamber (1985) (11)
- Stability of Si–O–F low-K dielectrics: attack by water molecules as function of near-neighbor Si–F bonding arrangements (1999) (11)
- Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors (1992) (11)
- Photoelectric mixing of coherent light in bulk photoconductors (1963) (11)
- Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates (1992) (11)
- Properties of bonded hydrogen in hydrogenated amorphous silicon and other hydrogenated amorphous silicon alloys (1995) (11)
- Electrical characteristics of diffused InAs p-n junctions (1961) (11)
- A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys (2004) (11)
- Vibrational properties of amorphous alloys (1985) (11)
- Bonding of fluorine-implanted and annealed silicon (1985) (11)
- Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H) : control of polyhydride incorporation and its effects on thin film properties (1989) (11)
- Local Atomic Structure of Thermally Grown SiO2 Films (1988) (11)
- Lateral effects in high-speed photodiodes (1965) (10)
- Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation (2002) (10)
- Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces (2000) (10)
- Deposition of silicon oxide, nitride and oxynitride thin films by remote plasma enhanced chemical vapor deposition (1987) (10)
- Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process : RPECVD (1991) (10)
- Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures (1993) (10)
- Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies (2007) (10)
- Application of constraint theory to Si-dielectric interfaces in a-Si:H and poly-Si thin film transistors (TFTs) (2000) (10)
- Lattice dynamics of the layered compounds InI and InBr (1982) (10)
- Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics (2000) (10)
- Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation (1998) (9)
- Stress Gradients in SIO 2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing (1989) (9)
- A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys (2004) (9)
- Bond constraint theory studies of chalcogenide phase change memories (2008) (9)
- Characterization of plasma-enhanced CVD processes (1990) (9)
- Barrier‐limited transport in μc‐Si and μc‐Si,C thin films prepared by remote plasma‐enhanced chemical‐vapor deposition (1992) (9)
- THE STRUCTURE OF AMORPHOUS SELENIUM FROM INFRARED MEASUREMENTS (1969) (9)
- Transport and phototransport properties of plasma‐deposited hydrogenated amorphous silicon nitrogen alloys, a‐Si,N:H (1994) (9)
- Formation of Microcrystalline Silicon film by RMS Process (1989) (9)
- A structural model for amorphous SiO2 including the effects of intermediate range order (1984) (9)
- Plasma phase polymerization reactions in the deposition of glow discharge deposited a‐Ge:H alloy films (1985) (9)
- An available power-bandwidth product for photodiodes (1964) (8)
- Low temperature deposition of amorphous silicon oxide and silicon nitride films (1985) (8)
- Deposition of Dielectric Films by Remote Plasma Enhanced CVD (1986) (8)
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures (1994) (8)
- Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non‐crystalline oxide and chalcogenide glasses (2009) (8)
- Preparation and properties of SiO2–SiOx heterostructures formed by uninterrupted processing by remote plasma enhanced chemical vapor deposition (1990) (8)
- Device-quality GaN–dielectric interfaces by 300 °C remote plasma processing (2003) (8)
- Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys (2001) (8)
- Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films (2011) (8)
- Vibrational properties of deuterated a-Si alloys (1983) (8)
- Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping (2010) (8)
- Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing (1995) (8)
- Dual‐function remote plasma etching/cleaning system applied to selective etching of SiO2 and removal of polymeric residues (1993) (8)
- Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes (1993) (8)
- Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100) (1990) (8)
- Barrier Limited Transport Mechanisms in Doped μc-Si and μc-Si,C (1991) (8)
- A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs (1998) (8)
- Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C (1997) (8)
- Spatially-Selective Incorporation of Bonded-Nitrogen into Ultra-Thin Gate Dielectrics by Low-Temperature Plasma-Assisted Processing (1998) (7)
- Low temperature semiconductor surface passivation for nanoelectronic device applications (2003) (7)
- Structure and excitations of amorphous solids : [conference], Williamsburg, Va., 1976 : [proceedings] (1976) (7)
- Interface electronic transition observed by optical second-harmonic spectroscopy in β − G a N / G a A s ( 001 ) heterostructures (1998) (7)
- Cathodoluminescence spectroscopy of nitrided SiO2–Si interfaces (1999) (7)
- Thermal Relaxation Phenomena in the Formation of Device-Quality SiO2/Si Interfaces (1993) (7)
- Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers (2004) (7)
- Intrinsic bonding defects in transition metal elemental oxides (2006) (7)
- A new low thermal budget approach to interface nitridation for ultra-thin silicon dioxide gate dielectrics by combined plasma-assisted and rapid thermal processing (1998) (7)
- Band edge electronic structure of transition metal/rare earth oxide dielectrics (2006) (7)
- Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing (2000) (7)
- THE DYNAMIC IONIC CHARGE OF ZINCBLENDE TYPE CRYSTALS. (2009) (7)
- Interfacial Properties of Si-Si 3 N 4 formed by Remote Plasma Enhanced Chemical Vapor Deposition (1999) (7)
- Photoconductivity and optical stability of intrinsic μc-Si films formed by remote plasma-enhanced chemical-vapor deposition, remote pecvd (1991) (7)
- Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces (2000) (7)
- Comparison of ultrathin SiO2∕Si(100) and SiO2∕Si(111) interfaces from soft x-ray photoelectron spectroscopy (2006) (7)
- A Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS (1994) (7)
- SiH stretching vibration in silicon suboxides: Local and remote induction effects (1989) (7)
- Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration (1994) (7)
- Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices (2004) (7)
- Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces (2000) (7)
- Deposition and Characterization of Near “Intrinsic” μc-Si Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition - RPECVD (1991) (7)
- Bond Angle Disorder in Tetrahedrally Bonded Amorphous Silicon (1986) (7)
- Bond strain and defects at interfaces in high-k gate stacks (2005) (7)
- Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity (2004) (7)
- Band offset measurements of the Si 3 N 4 Õ GaN „ 0001 ... interface (2003) (7)
- Low defect density a-Si, Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes (1985) (7)
- Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces (1998) (7)
- Remote plasma-assisted oxidation of SiC: a low temperature process for SiC?SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions (2004) (6)
- First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates (2013) (6)
- High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding (1994) (6)
- INTERFACE ELECTRONIC STRUCTURE OF TA2O5-AL2O3 ALLOYS FOR SI-FIELD-EFFECT TRANSISTOR GATE DIELECTRIC APPLICATIONS (2002) (6)
- Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations (2004) (6)
- Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process (1989) (6)
- Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress (2003) (6)
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- The Role of Hydrogen Atoms (H Atoms) in Metastable Defect Formation at Si–SiO2 Interfaces and in Hydrogenated Amorphous Si (a‐Si:H) (1997) (6)
- Reaction pathways and sources of OH groups in low temperature remote PECVD silicon dioxide thin films (1990) (6)
- Comment on the reflectivity of Ti-dichalcogenides (1976) (6)
- Infrared photomixer diodes (1964) (6)
- Intermediate phases in binary and ternary alloys How far can we go with a semi-empirical bond-constraint theory? (2007) (6)
- Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates. (2011) (6)
- Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for p+-poly Gated PMOSFETs Prepared by a Combined Remote Plasma Enhanced CVD/Thermal Oxidation Process (1998) (6)
- GaAs, a Sensitive Photodiode for the Visible (1960) (6)
- Hydrogenated amorphous silicon-nitrogen alloys, a-Si, N:H : a candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devices (1993) (6)
- Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy (2009) (6)
- CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON (1981) (6)
- The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics (1999) (6)
- Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations (1996) (6)
- O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy (2011) (6)
- Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process (1991) (6)
- Band offset energies in zirconium silicate Si alloys (2003) (6)
- Sputtering and native oxide formation on (110) surfaces of Cd1−xMnxTe (1986) (6)
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- How do Impurities Affect the Growth of μc-Si:H? (1998) (5)
- Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics (2011) (5)
- Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics (2008) (5)
- Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys (2001) (5)
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- Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation (2004) (5)
- Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions (2007) (5)
- Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO 2 and Epitaxial Growth of Si (1990) (5)
- Electron trapping states in a-Si:(H,O) and a-Si:(H,N) alloys (1984) (5)
- Infra-red active lattice bands of Se1−xTex (1968) (5)
- Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides (2004) (5)
- Strain‐reducing chemical bonding self‐organizations in nanocrystalline composites and non‐crystalline glasses and thin films (2010) (5)
- O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides (2011) (5)
- Hydrogen atom participation in metastable defect formation at SiSiO2 interfaces (1997) (5)
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- Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces (2007) (5)
- The Effect of Growth Ambients on the Local Atomic Structure of Thermally Grown Silicon Dioxide Thin Films (1987) (5)
- Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition (1992) (5)
- Improved Electrical Performance of a-Si:H Thin Film Transistors, TFTs with n+ (μc-Si Contact, and Silicon Oxide and Nitride Dual-Layer Dielectrics (1993) (5)
- Chemical bonding of polyatomic-ion implants in Si (1985) (5)
- Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics (1999) (5)
- Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies (1994) (5)
- Ab initio theory calculations of the electronic structure of nc-As2S3 and GeS2: an intrinsic mechanism for reversible photo-darkening (2004) (5)
- A Study of Conduction Band Edge States in Complex Oxides By X-Ray Absorption Spectroscopy (2006) (5)
- Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (1997) (4)
- Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1−xTixO3 for x greater than the percolation threshold of ∼0.16 (2011) (4)
- Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfaces (2007) (4)
- Cener for advanced electronic materials processing (1993) (4)
- Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7 (2007) (4)
- Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics (2009) (4)
- The Growth of Silicon Oxide Films by Remote Plasma Enhanced CVD (1986) (4)
- The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO2 Interface (1993) (4)
- Many-Electron Multiplet Theory Applied to O-Atom Vacancies in High-κ Dielectrics (2011) (4)
- Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress (2004) (4)
- Interfacial sub-oxide regions at SiSiO2 interfaces: minimization by post-oxidation rapid thermal anneal (1998) (4)
- Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor deposition (1994) (4)
- Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells (1993) (4)
- Conduction band-edge d-states in high-k dielectrics due to Jahn–Teller term splittings (2005) (4)
- c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process (1990) (4)
- Temperature Stress Response of Germanium MOS Vapacitors with HfO2/HfSiON Gate Dielectric (2009) (4)
- Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)- κ gate dielectrics (2007) (4)
- Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems (1990) (4)
- The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd). (1987) (4)
- Optical Characterization Of Silicon Oxycarbide Thin Films (1997) (4)
- Local Field Contributions to the Bond‐Stretching Frequencies of Si–H and Si–H2 Groups on Singular and Vicinal Si(111) (1997) (4)
- Nuclear magnetic resonance studies of amorphous deuterated silicon nitride thin films (1996) (4)
- Publisher’s Note: “Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)] (2006) (4)
- Local Bonding in A—Sige Alloy Films (1985) (4)
- Intrinsic limitations on the performance and reliability of high-k gate dielectrics for advanced silicon devices (2005) (4)
- High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials (1999) (4)
- Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers (1992) (4)
- A Spectroscopic Investigation of the Amorphous to Microcrystalline Transition in Silicon Prepared by Reactive Magnetron Sputtering (1993) (3)
- Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides (2005) (3)
- Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability (1996) (3)
- Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2 (2011) (3)
- Oxide formation and passivation for micro- and nano-electronic devices (2003) (3)
- Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD (1996) (3)
- Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition (1989) (3)
- Multichamber Integrated Deposition System For Silicon Based Dielectric Films (1989) (3)
- High Channel Mobility a-Si:H Thin Film Transistors with Oxide/Nitride Dielectrics (1992) (3)
- Vibrational spectra of defect and alloy atom complexes in amorphous silicon films (1983) (3)
- New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal‐oxide‐semiconductor devices (1996) (3)
- Electrical properties of microcrystalline silicon prepared by reactive magnetron sputtering from crystalline silicon targets (1993) (3)
- Microscopic Mechanisms for Reduced Static Dielectric Constants in Si-O-F Alloy Films (1997) (3)
- Intrinsic limitations on performance and reliability of i) Si oxynitride and ii) high-k T-M oxides, and silicate and aluminate alloy gate dielectrics (2001) (3)
- Silicon Suboxides: The “Co-Deposition” of a-Si:H and SiO 2 (1988) (3)
- Deposited Gate Dielectrics (2001) (3)
- In-situ Multilayer Film Growth Characterization by Brewster Angle Reflectance Differential Spectroscopy (1993) (3)
- Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy (2010) (3)
- A MICROSCOPIC MODEL FOR THE Qss DEFECT AT THE Si/SiO2 INTERFACE (1980) (3)
- Growth of a-Si:H Films by Remote Plasma Enhanced CVD (RPECVD) (1988) (3)
- Deposition of microcrystalline hydrogenated silicon,germanium alloy (μc-SixGe1 − x:H) films by reactive magnetron sputtering (RMS) (1996) (3)
- Ion–surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical–vapor deposition (1996) (3)
- Electronic structure of high-k transition-metal and rare-earth gate dielectrics for aggressively-scaled silicon devices (2001) (3)
- Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers (2009) (3)
- Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides (2006) (3)
- Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films (1995) (3)
- Intrinsic limitations for CMOS with high-k gate dielectrics: electrically-active grain boundary and oxygen atom defect states (2005) (3)
- Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation (1997) (3)
- Formation of Device Quality Si/SiO 2 Interfaces in a Multichamber Integrated Processing System (1989) (3)
- Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering (1994) (3)
- Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (1987) (3)
- Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si (1991) (3)
- Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys (2011) (3)
- LOW-TEMPERATURE FORMATION OF HIGH-QUALITY ULTRA-THIN GATE OXIDE BY REMOTE PLASMA-ENHANCED CVD ( REMOTE PECVD ) PROCESS (1989) (3)
- π-Bonding contributions in the chemisorption of oxygen onto non-polar compound semiconductor surfaces (1979) (3)
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- Intrinsic bonding Defects in Non-crystalline (nc-) SiO2 and GeO2: Spectroscopic Detection of Differences between Vacancy Sites with and without O-atom occupancy (2012) (0)
- Process Diagnostics For Remote Plasma-Enhanced Chemicalvapor Deposition (Pecvd) Of Silicon Nitrides (1995) (0)
- The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride. (1988) (0)
- Characterization of the Interface between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS) (1998) (0)
- Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991 (1993) (0)
- Estimation of Defect State Densities from Bulk Photoelectronic Properties of a-Si,Ge:H Alloys (1987) (0)
- Reversible metastable configurations in amorphous silicon (1985) (0)
- X-ray absorption spectroscopy studies of YMnO$_{3}$, HoMnO$_{3}$, and Y$_{.4}$Ho$_{.6}$MnO$_{3}$ (2009) (0)
- Deposition of Thin Insulating films by Plasma Enhanced CVD (1985) (0)
- Chemical Bonding Self-Organizations in Non-crystalline Hf Si Oxynitride Dielectrics : Low Direct Tunneling and Defect Levels Comparable to SiO_2 (2007) (0)
- Near edge x-ray absorption spectroscopy: a novel approach for determining conduction band edge states in transition metal oxide gate dielectrics (2005) (0)
- Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO2 and GeO2 (2013) (0)
- Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides (2000) (0)
- The Effect of Water Vapor and Oxygen in the Processing Environment on the Properties of Sputtered a-Si:H Films (1989) (0)
- Bonding Defects in Hydrogenated Amorphous Silicon (1996) (0)
- Chemical bonding and electronic structure of high-κ transition metal dielectrics: applications to interfacial band offset energies and electronically active defects (2003) (0)
- A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-xalloys (2010) (0)
- Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing (1995) (0)
- Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD) (1990) (0)
- Effects of gas additives on the properties of a-Si:H films (1989) (0)
- Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces (1998) (0)
- Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2 (2013) (0)
- Structure, preparation, and devices (1984) (0)
- Minority Carrier Diffusion Lengths And Photoconductivity In a-Si,N:H Deposited By Remote Pecvd (1994) (0)
- Surface Cleaning Prior to Formation of Si/SiO 2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) (1992) (0)
- Differences between the Electrical Properties of Nitrided Si-SiO2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition (1998) (0)
- Strain Dependent Diffusion in the Dry Thermal Oxidation Process of Crystalline Si (1991) (0)
- Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A. (1990) (0)
- NEW CHEMICALLY-ORDERED COMPOSITIONS IN THE GLASS SYSTEMS Ge//1// minus //xS//x AND Ge//1// minus //xSe//x. (1977) (0)
- Photoelectronic Properties of a-Si1-xGex:H Films (1985) (0)
- Reaction pathways for nitrided Si-SiO/sub 2/ interfaces by remote plasma assisted oxidation (1997) (0)
- Chemical Modification of Surface Steps on SI(111) Vicinal Wafers: a Bonding Model for Phase Changes in Second Harmonic Generation (1993) (0)
- Electrical Properties of Boron-Doped μc-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets (1992) (0)
- Papers from the 49th International Symposium of the AVS - Preface (2003) (0)
- Temperature Stress Response of Germanium MOS with HfSiON Dielectric (2009) (0)
- Evaluation and Comparison of 3.0 nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs (1998) (0)
- American Vacuum Society leadership in electronic materials processing: Past, present, and future (2003) (0)
- Atomically-Engineered Interfaces Between Crystalline-Ge Substrates and i) Nanocrystalline HfO2 and ii) Non-Crystalline Hf Si Oxynitride High-K Dielectrics (2009) (0)
- Defect States and Structural Disorder in a-Si. (1992) (0)
- O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy. (2012) (0)
- Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites (2013) (0)
- Self-organized Si suboxide (SiOx, x<2) interfacial layers - optimization of performance and reliability in advanced devices (2003) (0)
- Correlations Between XAS and Spectroscopic Ellipsometry Studies and Ab-Initio Quantum Calculations on RPE-MOCVD Deposited Titanium Silicate Alloys (2008) (0)
- HYDROGEN ENVIRONMENTS AND DEFECTS IN PLASMA-DEPOSITED a-Si: H. (1979) (0)
- Band-Edge Electronic States, and Pre-Existing Defects in Remote Plasma Deposited (RPD) GeO2 and SiO2 (2012) (0)
- Compensation of dangling bond defects in a-Si, Ge alloys. Annual technical subcontract report, 1 August 1984-31 July 1985 (1985) (0)
- Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys (2006) (0)
- Defects and Defect Precursor Reductions in Non-Crystalline Thin Films: Intermediate Phases Generated by Chemcial Bonding Self- Organizations (2007) (0)
- Invited Device-Quality SiO 2 / Si ( 100 ) and SiO 2 / Si ( 111 ) Interfaces Formed by Plasma-Assisted Oxidation and Deposition Processes (2008) (0)
- Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks (1999) (0)
- Electrical and Interface Analysis of ZrO2/ZrSiOx Stack Layers on p-Si (100) with Nitrogen Incorporation Treatment (2006) (0)
- Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites (2011) (0)
- High Tc superconducting thin films, devices, and applications, Atlanta, Ga. 1988 (1989) (0)
- Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites (2013) (0)
- Ab initio calculations for photo‐darkening and photo‐induced structural changes in As2S3 and GeS2 (2004) (0)
- Si-N Bonding at The SiO 2 /Si Interfaces During Deposition of SiO 2 by the Remote Pecvd Process (1991) (0)
- Measurements of the band offset of SiO 2 on clean GaN (2001) (0)
- Heterointerface dipoles: Applications to ÑaÖ Si-SiO 2 , ÑbÖ nitrided Si-N-SiO 2 , and ÑcÖ SiC-SiO 2 interfaces (1998) (0)
- Advanced Low-Temperature Processing of Gate Oxide for ULSI Fabrication (1992) (0)
- Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition. Final subcontract report, 1 July 1989--31 December 1992 (1993) (0)
- Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication (1993) (0)
- Interdisciplinary Approach: Annual Review of Materials Science . Vol. 1. Robert A. Huggins, Richard H. Bube, and Richard W. Roberts, Eds. Annual Reviews, Palo Alto, Calif., 1971. x, 420 pp., illus. $10. (1972) (0)
- Contributions to Silicon-Hydrogen Bond-Stretching Frequency in Amorphous Si Alloys (1992) (0)
- Formation of heterostructure devices in a multichamber processing environment with in-vacuo surface analysis diagnostics and in-situ process monitoring (1991) (0)
- Physical Performance of Polymer Systems Containing Micro and Nano Fillers (1998) (0)
- Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS (2009) (0)
- Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) Defect reduction for device applications (2013) (0)
- Plasma-Processing of Device-Quality GaN and Other Group III-Nitride-Dielectric Interfaces for Advanced Device Applications (2003) (0)
- Spectroscopic detection of medium range order in device-grade a-Si:H: dangling bond defects, and the Staebler-Wronski Effect (2012) (0)
- Plasma deposited multipactor coating for high power, sapphire, RF windows (2014) (0)
- Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices (2014) (0)
- Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO 2 interfaces on Si(111) surfaces (1994) (0)
- Erratum: "Low-temperature ( 2 and glass through interface engineering" [J. Vac. Sci. Technol. A 15, 1035 (1997)] (1998) (0)
- Band Offset Energies in Zirconium Silicate Alloys (2002) (0)
- Thermal annealing of the Si/SiO/sub 2/ interface probed by surface nonlinear optical techniques (1994) (0)
- Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO 2 Structures by A 900°C 30 Second Rapid Thermal Anneal (1997) (0)
- American Vacuum Society, National Symposium, 26th, New York, N.Y., October 1-5, 1979, Proceedings (1980) (0)
- Double Percolation in the Intermediate Phase of Network Glasses (2008) (0)
- Gate Dielectrics for Advanced Semiconductor Devices: Thermally-Grown SiO2 is a Very Difficult Act to Follow (2006) (0)
- Spectroscopic Studies of Band Edge Electronic and Defect States in Elemental High-k Oxide Dielectrics and Si Oxynitride Alloys onto Si(100) Substrates (2007) (0)
- Second Harmonic Generation on Chemically Treated Surfaces of Vicinal Si(111) Wafers (1994) (0)
- Processing Induced Pre-Existing Vacated (Empty) O-atom Defect Sites in Remote Plasma Deposited GeO 2 and SiO 2 Gate Dielectrics (2011) (0)
- SURFACE TREATMENTS AND NATIVE OXIDE FORMATION ON GaAs (1989) (0)
- Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD) (1993) (0)
- Stacked gates with doped μc‐Si electrodes and SiO2 dielectrics, both deposited by remote plasma‐enhanced chemical vapor deposition (1992) (0)
- Nucleation of p-Type Microcrystalline Silicon on Amorphous Silicon for n-i-p Solar Cells Using B(CH 3 ) 3 And BF 3 Dopant Source Gases (1998) (0)
- Electronic and vibrational properties (1984) (0)
- Preface to Materials Research Society 1999 Proceedings (1999) (0)
- Suppression of boron penetration for p+ polysilicon gate electrodes by ultra-thin RPECVD nitride films in composite oxide-nitride dielectrics (1998) (0)
- Controlled Incorporation of Nitrogen at The Top Surface of Silicon Oxide Gate Dielectrics (1996) (0)
- EXAFS investigation of the amorphous Ge 2 Sb 2 Te 5 optical memory material (2006) (0)
- A-Si:H Thin Film Transistors and Logic Circuits Fabricated in an Integrated Multichamber System (1990) (0)
- Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics (2003) (0)
- Selection, Growth, and Characterization of Gate Insulators on Mocvd Gallium Nitride for the Use in High Power Field Effect Devices (1997) (0)
- Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS) (1995) (0)
- Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO 2 Etching and Removal of C-F Polymer Residues (1992) (0)
- Compensation of dangling bonds in A-Si, Ge:H alloys. Annual report (1984) (0)
- Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology (1996) (0)
- High power nitrogen-incorporating remote plasma oxidation process for MOS applications (1997) (0)
- The Effects of Surface and Interface Depletion Regions on the Photoconductivity of a-Si:H in Surface Cell Structures (1986) (0)
- Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant (1989) (0)
- The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures (1997) (0)
- Radiation Effects On Emerging Electronic Materials And Devices (2010) (0)
- International Conference on Solid State Chemistry , Pardubice , Czech Republic Non-crystalline SiO 2 : processing induced pre-Existing defects associated with vacated O-atom intrinsic bonding sites (2013) (0)
- The Optical Properties of Plasma-Deposited SiO 2 and Si 3 N 4 Bragg Reflectors in the Spectral Range from 1.8 to 3.0 eV (1992) (0)
- Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides (2003) (0)
- Low‐temperature plasma‐assisted processes for fabrication of SiO2/Si heterostructures (1993) (0)
- Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors : a tribute to Professor Radu Grigorovici on the occasion of his 95th birthday (2006) (0)
- Intrinsic limitations for gate stack applications of complex high-k oxides in advanced Si devices: band edge states (2005) (0)
- Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H) (2008) (0)
- Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics (1999) (0)
- preface to Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, edited by H. R. Huff, C. A. Richter, M. L. Green, G. Lucovsky, and T. Hattori (1999) (0)
- Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics (2009) (0)
- Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfaces (2008) (0)
- Electronic transitions at Si (1995) (0)
- Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively) (2006) (0)
- Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD (1992) (0)
- Interfacial transition regions of gate dielectrics in advanced silicon devices (2001) (0)
- Spectroscopic Studies of Electrically Active Defects in High-K Gate Dielectrics (2008) (0)
- Investigation of Low-Temperature, Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology (1989) (0)
- Local bonding arrangements in amorphous Ge 2 Sb 2 Te 5 : the importance o (2007) (0)
- COORDINATIONDEPENDENTVIBRATIONALPROPERTIES OF AMORPHOUSSEMICONDUCTOR ALLOYS (1975) (0)
- Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO 2) x (TiO x ) 1- x and oth (2005) (0)
- Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices (1995) (0)
- Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon (2013) (0)
- Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO₂ and GeO₂ (Special Issue : Solid State Devices and Materials) (2013) (0)
- Local atomic structure of thermally grown and rapid thermally annealed silicon dioxide layers (2008) (0)
- Core and Valence Levels in Hydrogemated Amorphous Silicon (1986) (0)
- Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO 2 and Sic-SiO 2 Interfaces (1998) (0)
- Detection of strain minimization in Hf-based gate dielectrics by X-ray absorption and non-linear optical second harmonic generation spectroscopy (2009) (0)
- Processing of Inorganic-Organic Hybrids From Metal Alkoxides and Phenyltriethoxysilane (1998) (0)
- Spectroscopic Studies of Electronically Active Defects in Transition Metal Oxides for Advanced Si Devices (2007) (0)
- The Effects of Band Bending on the Optical, Electrical and Photo-Electronic Properties of a-Si:H Thin Films in Surface Cell Structures (1987) (0)
- A new approach to gate stack integrity based on mechanical and electrostatic strain relief in self-organized interfacial suboxide transition regions (2003) (0)
- Electronic structure of high-k gate dielectrics - applications to tunneling (2003) (0)
- Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And Study Of Subsequent Chemical Stability (1997) (0)
- Deposition of dielectrics by remote plasma enhanced CVD (2008) (0)
- Spectroscopic Studies of Electronic Structure of Elemental and Complex Transition Metal Oxides: d-state Occupation and Device Functionality (2009) (0)
- Localized states in amorphous Si and Si,Ge alloys (2008) (0)
- Chemical Reaction Pathways for the Deposition of Amorphous Silicon-Hydrogen Alloys by Remote Plasma Enhanced CVD (1988) (0)
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What Schools Are Affiliated With Gerald Lucovsky?
Gerald Lucovsky is affiliated with the following schools:
