Gaudenzio Meneghesso

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Physics

Why Is Gaudenzio Meneghesso Influential?

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According to Wikipedia, Gaudenzio Meneghesso from the University of Padova, Padova, Italy was named Fellow of the Institute of Electrical and Electronics Engineers in 2013 for contributions to the reliability physics of compound semiconductors devices.

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Gaudenzio Meneghesso's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

The 2018 GaN power electronics roadmap (2018) (619)
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008) (537)
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies (2013) (352)
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004) (303)
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013) (263)
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs (2010) (237)
A Review on the Reliability of GaN-Based LEDs (2008) (234)
Accelerated Life Test of High Brightness Light Emitting Diodes (2008) (152)
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006) (148)
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008) (127)
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method (2011) (119)
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013) (117)
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias (2012) (110)
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014) (110)
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes (2009) (109)
Reliability issues of Gallium Nitride High Electron Mobility Transistors (2010) (105)
Anomalous Kink Effect in GaN High Electron Mobility Transistors (2009) (97)
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016) (97)
Performance Degradation of High-Brightness Light Emitting Diodes Under DC and Pulsed Bias (2008) (96)
Recent results on the degradation of white LEDs for lighting (2010) (95)
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview (2014) (95)
Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing (2009) (94)
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017) (91)
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors (2008) (91)
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress (2005) (85)
Reliability and parasitic issues in GaN-based power HEMTs: a review (2016) (85)
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs (2010) (84)
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate (2012) (82)
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs (2014) (81)
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes (2006) (81)
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes (2015) (81)
On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices (2015) (80)
Editorial (2018) (80)
Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs (2016) (80)
On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness (1999) (79)
GaN-based power devices: Physics, reliability, and perspectives (2021) (78)
High temperature electro-optical degradation of InGaN/GaN HBLEDs (2007) (78)
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements (2013) (76)
30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs (2002) (75)
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes (2005) (74)
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs (2014) (71)
High-Temperature Degradation of GaN LEDs Related to Passivation (2006) (70)
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs (2015) (67)
Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells (2019) (65)
Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications (2014) (65)
Reliability and failure analysis in power GaN-HEMTs: An overview (2017) (65)
Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage (2015) (60)
Power GaN Devices (2017) (59)
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs (2017) (59)
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress (2004) (58)
Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's (1996) (57)
Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers (2016) (56)
Role of defects in the thermal droop of InGaN-based light emitting diodes (2016) (56)
Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs (2013) (55)
Failure Modes and Mechanisms of DC-Aged GaN LEDs (2002) (55)
Analysis of a High-Power-Factor Electronic Ballast for High Brightness Light Emitting Diodes (2005) (54)
A review of failure modes and mechanisms of GaN-based HEMTs (2007) (54)
Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate (2015) (54)
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs (2017) (53)
Phosphors for LED-based light sources: Thermal properties and reliability issues (2012) (52)
Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy (2011) (51)
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors (2010) (51)
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons (2012) (51)
Degradation Mechanisms of High-Power LEDs for Lighting Applications: An Overview (2014) (51)
Defect-Related Degradation of AlGaN-Based UV-B LEDs (2017) (51)
High brightness GaN LEDs degradation during dc and pulsed stress (2006) (49)
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation (2009) (49)
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes (2009) (49)
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements (2009) (48)
Evidence of interface trap creation by hot‐electrons in AlGaAs/GaAs high electron mobility transistors (1996) (48)
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons (2014) (48)
Chip and package-related degradation of high power white LEDs (2012) (48)
Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (47)
Electrostatic Discharge and Cycling Effects on Ohmic and Capacitive RF-MEMS Switches (2007) (46)
Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDs (2007) (46)
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes (2014) (46)
Reliability of visible GaN LEDs in plastic package (2003) (46)
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes (2012) (46)
Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model (2005) (45)
Thermal stability analysis of high brightness LED during high temperature and electrical aging (2007) (45)
Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy (2013) (44)
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements (2010) (43)
2.1 A/mm current density AlGaN/GaN HEMT (2003) (43)
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons (1995) (42)
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes (2010) (42)
Thermally Activated Degradation of Remote Phosphors for Application in LED Lighting (2013) (42)
Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors (2018) (41)
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress (2015) (41)
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging (2002) (41)
ESD robustness of AlGaN/GaN HEMT devices (2007) (40)
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence (2000) (39)
Laser-Based Lighting: Experimental Analysis and Perspectives (2017) (39)
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer (1998) (39)
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes (2008) (39)
Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress (2018) (39)
Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors (2010) (39)
OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown (2014) (37)
Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs) (2011) (37)
Influence of Shunt Resistance on the Performance of an Illuminated String of Solar Cells: Theory, Simulation, and Experimental Analysis (2014) (36)
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes (2012) (36)
Extensive Analysis of the Degradation of Blu-Ray Laser Diodes (2008) (36)
Reducing the EMI Susceptibility of a Kuijk Bandgap (2008) (36)
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs (2012) (35)
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs (2017) (34)
Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs (2002) (34)
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate (2016) (34)
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors (2016) (34)
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues (2014) (34)
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes (2015) (33)
Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTs (1997) (33)
Gate Stability of GaN-Based HEMTs with P-Type Gate (2016) (33)
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs (2007) (32)
Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation (2013) (32)
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs (2018) (32)
Degradation of AlGaN/GaN HEMT devices (2013) (31)
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress (2009) (31)
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives (2020) (31)
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs (2017) (31)
Coupling halide perovskites with different materials: From doping to nanocomposites, beyond photovoltaics (2020) (31)
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism (2010) (31)
Long-term degradation mechanisms of mid-power LEDs for lighting applications (2015) (31)
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects (2015) (30)
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches (2011) (30)
Monte Carlo study of the dynamic breakdown effects in HEMT's (2000) (30)
Reliability Enhancement by Suitable Actuation Waveforms for Capacitive RF MEMS Switches in III–V Technology (2012) (29)
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors (2002) (29)
Defect-related degradation of Deep-UV-LEDs (2010) (29)
Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition (2016) (29)
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs (1996) (28)
Diagnosis of trapping phenomena in GaN MESFETs (2000) (28)
Next generation bulk FinFET devices and their benefits for ESD robustness (2009) (28)
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs (2009) (28)
Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions (2006) (28)
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design (2015) (28)
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements (2017) (28)
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface (2013) (27)
Degradation mechanisms of high-power white LEDs activated by current and temperature (2011) (27)
Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors (2005) (27)
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena (2015) (27)
Development of a new high holding voltage SCR-based ESD protection structure (2008) (27)
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED (2010) (26)
Electron and hole-related luminescence processes in gate injection transistors (2010) (26)
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC (2005) (26)
Reliability Issues in RF-MEMS Switches Submitted to Cycling and ESD Test (2006) (26)
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures (2015) (25)
Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices (2013) (25)
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements (2009) (25)
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs (2018) (25)
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization (2019) (25)
Developments on DC/DC converters for the LHC experiment upgrades (2014) (24)
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT (2017) (24)
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs (2019) (24)
Reliability of Deep-UV Light-Emitting Diodes (2008) (24)
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry (2017) (24)
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation (2012) (24)
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress (2016) (24)
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications (2018) (24)
Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing (2010) (24)
Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress (2009) (23)
GaN-Based Laser Wireless Power Transfer System (2018) (23)
EOS/ESD sensitivity of functional RF-MEMS switches (2008) (23)
High-temperature failure of GaN LEDs related with passivation (2006) (23)
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability (2019) (23)
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation (2012) (22)
Failure causes and mechanisms of retrofit LED lamps (2015) (22)
High-voltage double-pulsed measurement system for GaN-based power HEMTs (2014) (22)
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's (2002) (22)
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs (2015) (22)
Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs (2002) (22)
Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence (2013) (22)
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches (2010) (22)
ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests (2000) (21)
Effects of Positive and Negative Stresses on III–V MOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric (2011) (21)
Electroluminescence analysis of HFET's breakdown (1999) (21)
A physical-based equivalent circuit model for an organic/electrolyte interface (2016) (21)
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability (2012) (21)
Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs (2016) (20)
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications (2009) (20)
(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective (2016) (20)
Moisture resistance in perovskite solar cells attributed to a water-splitting layer (2021) (20)
Radiation performance of new semiconductor power devices for the LHC experiment upgrades (2015) (20)
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes (2016) (20)
Vertical breakdown of GaN on Si due to V-pits (2020) (20)
Electrostatic discharge effects in ultrathin gate oxide MOSFETs (2006) (20)
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure (2016) (20)
Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing (1997) (19)
Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation (2014) (19)
Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions (2016) (19)
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level (2017) (19)
High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors (2015) (18)
Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches (2006) (18)
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs (2019) (18)
Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments (2014) (18)
Thermally activated degradation and package instabilities of low flux LEDS (2009) (18)
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress (2019) (18)
UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives (2021) (18)
Active recovering mechanism for high performance RF MEMS redundancy switches (2010) (17)
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies (2002) (17)
Proton induced trapping effect on space compatible GaN HEMTs (2014) (17)
A review on the reliability of GaN-based laser diodes (2010) (17)
COVID-19: ensuring our medical equipment can meet the challenge (2020) (17)
Electrical characterization of ALD Al2O3 - HfO2 and PECVD Al2O3 passivation layers for p-type CZ-Silicon PERC solar cells (2012) (17)
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs (2001) (17)
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors (2018) (17)
Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers (2019) (16)
Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation (2017) (16)
Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination (2009) (16)
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions (2013) (16)
Extensive analysis of the degradation of phosphor-converted LEDs (2009) (16)
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues (2013) (16)
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation (2021) (16)
Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors (2012) (16)
Reliability Study of Ruthenium-Based Dye-Sensitized Solar Cells (DSCs) (2012) (15)
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology (2002) (15)
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S (1996) (15)
Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs (2016) (15)
Positive and negative threshold voltage instabilities in GaN-based transistors (2018) (15)
Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors (2017) (15)
Failure mechanisms of gallium nitride LEDs related with passivation (2005) (15)
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs (2014) (15)
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors (2012) (15)
Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy (2020) (15)
Negative dynamic Ron in AlGaN/GaN power devices (2017) (15)
Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors (2011) (15)
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density (2017) (15)
Electrostatic Discharge and electrical overstress on GaN/InGaN Light Emitting Diodes (2001) (15)
Trapping and high field related issues in GaN power HEMTs (2014) (15)
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process (2020) (15)
Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project (2018) (15)
Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs (2008) (15)
Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge (1997) (15)
High Brightness Ingan Leds Degradation at High Injection Current Bias (2006) (15)
DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs (1999) (14)
Current induced degradation study on state of the art DUV LEDs (2018) (14)
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology (2007) (14)
A Statistical Approach to Microdose Induced Degradation in FinFET Devices (2009) (14)
On-Wafer Single-Pulse Thermal Load–Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs (2016) (14)
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs (2018) (14)
A Combined Mechanical and Electrical Characterization Procedure for Investigating the Dynamic Behavior of RF-MEMS Switches (2014) (14)
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis (2016) (14)
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications (2013) (14)
A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches (2015) (14)
NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration (2019) (14)
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs (2001) (14)
Reliability and instabilities in GaN-based HEMTs (2014) (14)
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress (2016) (14)
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells (2013) (14)
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model (2011) (14)
Light, bias, and temperature effects on organic TFTs (2010) (14)
Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors (2012) (14)
Analysis of magnesium zinc oxide layers for high efficiency CdTe devices (2019) (14)
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors (2019) (13)
Single- and double-heterostructure GaN-HEMTs devices for power switching applications (2012) (13)
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs (2021) (13)
Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in $\hbox{NPD/Alq}_{3}$ OLEDs (2010) (13)
Reliability study of dye-sensitized solar cells by means of solar simulator and white LED (2012) (13)
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics (2021) (13)
Positive Temperature Dependence of the Electron Impact Ionization Coefficient in In Ga As/InP HBT's (1997) (13)
Degradation of vertical GaN FETs under gate and drain stress (2018) (13)
A study of hot-electron degradation effects in pseudomorphic HEMTs (1997) (13)
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes (2019) (13)
Al2O3 Surface Passivation Characterized on Hydrophobic and Hydrophilic c-Si by a Combination of QSSPC, CV, XPS and FTIR (2012) (13)
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs (2003) (13)
Guest Editorial Special Issue on GaN Electronic Devices (2013) (13)
Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation (2020) (13)
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage (2014) (13)
INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs (1998) (13)
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives (2022) (12)
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs (2018) (12)
ESD protection structures for BCD5 smart power technologies (2001) (12)
Turn-on speed of grounded gate NMOS ESD protection transistors (1996) (12)
Thermal storage effects on AlGaN/GaN HEMT (2008) (12)
Temperature as an accelerating factor for lifetime estimation of RF-MEMS switches (2016) (12)
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (12)
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs (2002) (12)
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors (2019) (12)
Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications (2014) (12)
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs (2015) (12)
A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures (2010) (12)
Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes (2009) (12)
Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices (2006) (12)
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift (2017) (12)
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT (2019) (12)
$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate (2019) (12)
Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence (2019) (12)
CdTe solar cells: technology, operation and reliability (2021) (11)
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs (2015) (11)
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests (1998) (11)
A study of the failure of GaN-based LEDs submitted to reverse-bias stress and ESD events (2010) (11)
The role of Mg complexes in the degradation of InGaN-based LEDs (2004) (11)
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs (2009) (11)
Trapping induced parasitic effects in GaN-HEMT for power switching applications (2015) (11)
Overstress and electrostatic discharge in CMOS and BCD integrated circuits (2000) (11)
Preventing infectious diseases in Intensive Care Unit by medical devices remote control: Lessons from COVID-19 (2020) (11)
Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress (2012) (11)
Failures of LEDs in Real-World Applications: A Review (2018) (11)
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test (2009) (11)
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment (2019) (11)
Combined optical and electrical analysis of AlGaN-based deep-UV LEDs reliability (2008) (11)
Breakdown investigation in GaN-based MIS-HEMT devices (2014) (11)
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs (2019) (10)
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs (2012) (10)
Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects (2019) (10)
Hot electrons and time-to-breakdown induced degradation in AlGaN/GaN HEMTs (2012) (10)
Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical Switches (2016) (10)
Reliability evaluation for Blu-Ray laser diodes (2010) (10)
Degradation of GaN-on-GaN vertical diodes submitted to high current stress (2018) (10)
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues (2005) (10)
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels (2004) (10)
Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices (2021) (10)
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation (2014) (10)
Degradation of III–V inversion-type enhancement-mode MOSFETs (2010) (10)
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications (2013) (10)
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors (2013) (10)
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities (2017) (10)
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach (2009) (10)
Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence (2006) (10)
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs (2020) (10)
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs (2018) (10)
High Open-Circuit Voltage Cs2 AgBiBr6 Carbon-Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray-Coated Carbon Electrodes from Waste Tire Sources. (2022) (9)
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs (2020) (9)
Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy (2017) (9)
Improved reliability of organic light-emitting diodes with indium-zinc-oxide anode contact (2009) (9)
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects (2020) (9)
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs (2009) (9)
Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs (2003) (9)
Traps localization and analysis in GaN HEMTs (2014) (9)
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells (2021) (9)
Acceleration of Microwelding on Ohmic RF-MEMS Switches (2011) (9)
Reliability of Gallium Nitride microwave transistors (2016) (9)
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon (2020) (9)
Transient evolution of mechanical and electrical effects in microelectromechanical switches subjected to long-term stresses (2015) (9)
Reliability of RF-MEMS (2005) (9)
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias (2019) (9)
Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors (2020) (9)
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells (2013) (9)
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide (2007) (9)
Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation (2020) (8)
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches (2013) (8)
GaN-HEMTs devices with single- and double-heterostructure for power switching applications (2013) (8)
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements (2020) (8)
Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation (2012) (8)
2014 44th European Solid State Device Research Conference (ESSDERC) (2014) (8)
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs (2013) (8)
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs (2021) (8)
Field plate related reliability improvements in GaN-on-Si HEMTs (2012) (8)
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications (2020) (8)
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs (2016) (8)
Reliability study of organic complementary logic inverters using constant voltage stress (2015) (8)
Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes (2015) (8)
Parasitic effects and long term stability of InP-based HEMTs (2000) (8)
Study of threshold voltage instability in E‐mode GaN MOS‐HEMTs (2016) (8)
Low-energy UV effects on Organic Thin-Film-Transistors (2011) (8)
Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure (2012) (8)
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors (2020) (8)
Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs (2012) (8)
Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications (2020) (8)
A Thermally Actuated Microelectromechanical (MEMS) Device For Measuring Viscosity (2011) (8)
Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes (2016) (8)
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping (2019) (8)
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric (2013) (8)
Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation (2015) (8)
Reliability analysis of InGaN Blu-Ray laser diode (2009) (8)
Evidence of optically induced degradation in gallium nitride optoelectronic devices (2018) (8)
Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation (2017) (8)
High Open‐Circuit Voltage Cs2AgBiBr6 Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources (2022) (8)
CDM circuit simulation of a HV operational amplifier realized in 0.35um smart power technology (2007) (8)
Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model (2020) (8)
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs (2021) (8)
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization (2021) (7)
Gallium nitride based HEMTs for power applications: High field trapping issues (2014) (7)
On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's (1995) (7)
Recovery of low temperature electron trapping in AlGaAs/InGaAs PM-HEMTs due to impact-ionization (1995) (7)
Channel temperature measurement of PHEMT by means of optical probes (2003) (7)
Analysis of diffusion involved in degradation of InGaN-based laser diodes (2009) (7)
Organic TFT with SiO2-parylene gate dielectric stack and optimized pentacene growth temperature (2009) (7)
GaN HEMTs with p-GaN gate: field- and time-dependent degradation (2017) (7)
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability (2020) (7)
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures (2019) (7)
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art (2022) (7)
A positive exploitation of ESD events: Micro-welding induction on ohmic MEMS contacts (2011) (7)
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting (2015) (7)
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs (2021) (7)
Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT (2020) (7)
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability (2005) (7)
Impact wear and other contact effects on the electro-mechanical reliability of MEMS (2014) (7)
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures (2020) (7)
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices (2016) (7)
Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy (2005) (7)
Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements (2015) (7)
Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs (2016) (7)
Viscoelasticity Recovery Mechanism in Radio Frequency Microelectromechanical Switches (2016) (7)
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT (2013) (7)
Reverse bias degradation of metal wrap through silicon solar cells (2016) (7)
2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal (2018) (7)
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits (2018) (7)
Stability and degradation of isolation and surface in Ga2O3 devices (2019) (7)
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs (2010) (7)
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology (2021) (7)
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs (2021) (7)
Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions (2020) (7)
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration (2018) (6)
Impact ionization in compound semiconductor devices (2001) (6)
Organic Thin Film Transistor degradation under sunlight exposure (2012) (6)
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes (2009) (6)
Study of the effects of UV-exposure on dye-sensitized solar cells (2013) (6)
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits (2011) (6)
Thermal degradation of InGaN/GaN LEDs ohmic contacts (2008) (6)
Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects (2015) (6)
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms (2014) (6)
Study of neutron damage in GaAs MESFETs (1997) (6)
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency (2011) (6)
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes (2013) (6)
Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics (2015) (6)
Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs (1999) (6)
Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes (2016) (6)
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits (2012) (6)
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer (2021) (6)
(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors (2011) (6)
Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test (2011) (6)
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs (2021) (6)
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements (2020) (6)
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation (2019) (6)
Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs (2001) (6)
Anti-series GGNMOS ESD clamp for space application IC's (2014) (6)
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs (2015) (6)
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator (2020) (6)
Effects of positive and negative constant voltage stress on organic TFTs (2013) (6)
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics (2021) (6)
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs (2019) (6)
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation (2015) (6)
"Hot-plugging" of LED modules: Electrical characterization and device degradation (2013) (6)
Experimental investigation on the exploitation of an active mechanism to restore the operability of malfunctioning RF-MEMS switches (2010) (6)
GaN-based LEDs: State of the art and reliability-limiting mechanisms (2014) (6)
Development of ESD protection structures for BULK and SOI BCD6 technology (2006) (6)
Comparison between positive and negative constant current stress on dye-sensitized solar cells (2013) (6)
Adaptive multi-wavelength LED star simulator for space life studies (2016) (6)
Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique (2016) (5)
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress (2018) (5)
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs (2014) (5)
Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights (2005) (5)
Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes (2017) (5)
Impact of Strain on ESD Robustness of FinFET Devices (2008) (5)
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors (2006) (5)
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability (2019) (5)
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays (2008) (5)
GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms (2012) (5)
Degradation of InGaN‐based laser diodes due to increased non‐radiative recombination rate (2010) (5)
Long-term lifetime prediction for RF-MEMS switches (2016) (5)
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions (2020) (5)
Influence of CdTe solar cell properties on stability at high temperatures (2020) (5)
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review (2020) (5)
Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate (5)
ESD sensitivity of a GaAs MMIC microwave power amplifier (2011) (5)
Trap characterization in buried-gate n-channel 6H-SiC JFETs (2001) (5)
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation (2017) (5)
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors (2019) (5)
BTI saturation and universal relaxation in SiC power MOSFETs (2020) (5)
Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regime (1998) (5)
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes (2019) (5)
Reliability of Ultraviolet Light-Emitting Diodes (2019) (5)
Reversible Degradation of GaN LEDs Related to Passivation (2007) (5)
Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate (2008) (5)
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs (2004) (5)
A discussion of the susceptibility of a brokaw bandgap to EMI (2006) (5)
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications (2014) (5)
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs (1997) (5)
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress (2010) (5)
Effects of channel hot carrier stress on III–V bulk planar MOSFETs (2012) (5)
High PAE high reliability AlN/GaN double heterostructure (2015) (4)
Parasitic Effects in GaN HEMTs and Related Characterization Methods (2009) (4)
Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures (1997) (4)
Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications (2021) (4)
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors (2018) (4)
Development of “kink” in the output I–V characteristics of pseudomorphic hemt's after hot-electron accelerated testing (1997) (4)
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes (2015) (4)
Analysis of ESD effects on organic thin-film-transistors by means of TLP technique (2016) (4)
Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT's (1995) (4)
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application (2008) (4)
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs (2017) (4)
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs (2001) (4)
EOS/ESD sensitivity of phase-change-memories (2009) (4)
High performance high reliability AlN/GaN DHFET (2014) (4)
Backside Failure Analysis of GaAs ICs after ESD tests (2002) (4)
On the Pulsed and Transient Characterization of Organic Field-Effect Transistors (2015) (4)
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress (2018) (4)
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects (2018) (4)
High Efficiency Ultra-Thin CdTe Absorbers by Physical Vapor Deposition (2014) (4)
Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing (2014) (4)
Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties (2017) (4)
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors (2015) (4)
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation (2017) (4)
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs (2003) (4)
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis (2019) (4)
Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors (2012) (4)
Guest Editorial Special Issue on Light-Emitting Diodes (2010) (4)
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz (2013) (4)
Trapping And Degradation Mechanisms In Gan-Based Hemts (2017) (4)
Full Optical Contactless Thermometry Based on LED Photoluminescence (2021) (4)
Accelerated testing of RF-MEMS contact degradation through radiation sources (2010) (4)
Anomalous impact-ionization gate current in high breakdown InP-based HEMT's (1996) (4)
Trap-state mapping to model GaN transistors dynamic performance (2022) (4)
Influence of device self-heating on trap activation energy extraction (2013) (4)
Degradation of InGaN-based LEDs related to charge diffusion and build-up (2016) (4)
A Physics-Based, Accurate Spice Model of Impact-Ionization Effects in Bipolar Transistors (1994) (4)
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration (2019) (4)
Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs (2013) (4)
Reliability investigation on CdTe solar cells submitted to short-term thermal stress (2019) (4)
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN∕GaN light emitting diodes (2008) (4)
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy (2021) (4)
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal (2021) (4)
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs (1999) (4)
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs (2000) (3)
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments (2018) (3)
Thermal and electrical characterization of catastrophic degradation of silicon solar cells submitted to reverse current stress (2013) (3)
Review on the degradation of GaN-based lateral power transistors (2021) (3)
Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches (2008) (3)
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements (2014) (3)
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs (2014) (3)
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs (2020) (3)
Glass-ceramic composites for high-power white-light-emitting diodes (2021) (3)
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials (2016) (3)
Breakdown and low-temperature anomalous effects in 6H SiC JFETs (1998) (3)
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs (2001) (3)
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT (2019) (3)
Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures (2014) (3)
Analysis of the role of current in the degradation of InGaN-based laser diodes (2009) (3)
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process (2018) (3)
A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics (2021) (3)
Threshold Voltage Instability in SiC Power MOSFETs (2018) (3)
Current collapse associated with surface states in GaN-based HEMT’s. Theoretical/experimental investigations (2004) (3)
Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers (2021) (3)
Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS (2006) (3)
Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors (2014) (3)
GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress (2020) (3)
HIGH ROBUSTNESS GAN HEMT SUBJECT TO REVERSE BIAS STRESS (2010) (3)
Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states (2014) (3)
High Efficiency CdTe Solar Cells by Low Temperature Deposition with MgZnO HRT Layer (2017) (3)
Review of Approaches and Solutions for Effective ESD Protection Devices and Schemes in Smart Power ICs (2006) (3)
Potential induced degradation in high-efficiency bifacial solar cells (2016) (3)
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes (2018) (3)
Open channel impact-ionization effects in InP-based HEMT's and their dependence on channel quantization and temperature (1996) (3)
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices (2020) (3)
Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin (2017) (3)
Reliability Investigation of GaN HEMTs for MMICs Applications (2014) (3)
Reliability of InGaN‐based LEDs submitted to reverse‐bias stress (2010) (3)
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse (2022) (3)
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics (2013) (3)
Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs (2005) (3)
Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques (2008) (3)
Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies (2010) (3)
On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices (2015) (3)
Effects of constant voltage stress on organic complementary logic inverters (2014) (3)
HBM and TLP ESD robustness in smart-power protection structures (1999) (3)
Cathodoluminescence from hot electron stressed InP HEMTs (1999) (3)
Reliability and failure analysis of RF-MEMS switches for space applications (2011) (3)
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs (2016) (3)
Experimental analysis and electro-thermal simulation of low- and high-voltage ESD protection bipolar devices in a Silicon-On-Insulator Bipolar-CMOS-DMOS technology (2001) (3)
Recent results on the physical origin of the degradation of GaN-based LEDs and lasers (2011) (3)
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps (2012) (3)
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction (2020) (2)
Long-term degradation of InGaN-based laser diodes: Role of defects (2017) (2)
Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates (2007) (2)
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties (2016) (2)
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment (2020) (2)
Study and characterization of GaN MOS capacitors: Planar vs trench topographies (2022) (2)
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs (2018) (2)
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform (2010) (2)
Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling (2021) (2)
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation (2021) (2)
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate (2013) (2)
Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs (2000) (2)
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy (2020) (2)
Field-dependent degradation mechanisms in GaN-based HEMTs (2016) (2)
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure (2015) (2)
Impact of Continuous Actuation on the Reliability of Dielectric-less Ohmic RF-MEMS Switches (2009) (2)
Exploration of gate trench module for vertical GaN devices (2020) (2)
Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness (2009) (2)
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production (2018) (2)
Characterization of Schottky SiC Diodes for Power Applications (2001) (2)
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs (2022) (2)
GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress (2022) (2)
COVID-19: Effectiveness of Widespread Diagnostic Tests to Prevent Health Care Collapse in the Veneto Region, Italy (2020) (2)
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy (2004) (2)
Modeling and characterization of a circular-shaped energy scavenger in MEMS surface micromachining technology (2011) (2)
Multifunctional Field-Effect Transistor for High-Density Integrated Circuits (2011) (2)
A New Degradation Mechanism Induced by DX-Centers in AlGaAs/InGaAs PM-HEMT's (1994) (2)
Difluorochloromethane treated thin CdS buffer layers for improved CdTe solar cells (2019) (2)
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography (2010) (2)
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields (2008) (2)
Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon (2022) (2)
Reliability analysis of GaN-Based LEDs for solid state illumination (2003) (2)
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs (2015) (2)
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components (2016) (2)
Test structures and testing methods for electrostatic discharge: results of PROPHECY project (1999) (2)
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy (2005) (2)
Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling (2022) (2)
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate (2006) (2)
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT (2021) (2)
Hot carrier aging degradation phenomena in GaN based MESFETs (2004) (2)
Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis (2012) (2)
Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition (2020) (2)
Microscopic, Electrical and Optical Studies on InGaN/GaN Quantum Wells Based LED Devices (2014) (2)
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs (2003) (2)
Reliability and high field related issues in GaN-HEMT devices — Part I (2014) (2)
Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT (2021) (1)
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs (2020) (1)
Role of non-radiative recombination in the degradation of InGaN-based laser diodes (2008) (1)
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress (2021) (1)
Optical stress and reliability study of ruthenium-based dye-sensitized solar cells (DSSC) (2011) (1)
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress (2017) (1)
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition (2020) (1)
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics (2022) (1)
High-Resolution Cathodoluminescence Investigation of Degradation Processes in InGaN Green Laser Diodes (2016) (1)
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs (2022) (1)
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices (2022) (1)
Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells (2019) (1)
Study of the effect of stress-induced trap levels on OLED characteristics by numerical model (2012) (1)
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results (2022) (1)
Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices (2000) (1)
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells (2012) (1)
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs (2001) (1)
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs (2007) (1)
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis (2022) (1)
ESD characterization of multi-chip RGB LEDs (2013) (1)
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature (2022) (1)
Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation (2022) (1)
Electron Trapping in GaN-on-Si Power HEMTs (2015) (1)
Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress (2020) (1)
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes (2021) (1)
Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT'S (1998) (1)
Light emission in GaN HEMTs: a powerful characterization and reliability tool (2008) (1)
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution (2020) (1)
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs (2010) (1)
Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown (2014) (1)
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications (2021) (1)
Smart Power Devices Nanotechnology (2017) (1)
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact (2021) (1)
Long-term stresses on linear micromirrors for pico projector application (2017) (1)
Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications (2018) (1)
Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes (2020) (1)
Analysis and Reliability Study of Luminescent Materials for White Lighting (2018) (1)
Charge Trap Investigation Methodology on RF-MEMS Switches (2014) (1)
GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation (2020) (1)
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level (2021) (1)
Reverse gate bias stress induced degradation of GaN HEMT (2009) (1)
Accelerated Aging of GaN Light Emitting Diodes Studied by 1/f and RTS Noise (2005) (1)
Characterization and endurance study of aluminate/silicate/garnet/nitride phosphors for high-performance SSL (2013) (1)
Stiction Induced by Dielectric Breakdown on rf-MEMS Switches (2008) (1)
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs (2021) (1)
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes (2021) (1)
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences (2014) (1)
High temperature instabilities of ohmic contacts on p‐GaN (2008) (1)
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling (2020) (1)
Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices (2021) (1)
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress (2022) (1)
Electro-thermally activated degradation of blu-ray gan-based laser diodes (2008) (1)
Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence (2022) (1)
Reliability Issue in Compound Semiconductor Heterojunction Devices (1999) (1)
Internal checkup illumination sources for METIS coronagraph on solar orbiter (2017) (1)
Degradation of InGaN based green laser kinetics and driving forces diodes (2015) (1)
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs (2021) (1)
Degradation physics of GaN-based lateral and vertical devices (2019) (1)
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes (2015) (1)
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate (2021) (1)
Analysis of the degradation of AlGaN-based deep-ultraviolet LEDs (2009) (1)
On the Key Role of the Brokaw Cell on Bandgap Immunity to EMI (2006) (1)
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons (2020) (1)
InGaN-based optoelectronic devices: Loss mechanisms and degradation processes (2015) (1)
GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability (2019) (1)
Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET's (1998) (1)
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion (2020) (1)
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm (2004) (1)
Defect-related tunneling contributions to subthreshold forward current in GaN-Based LEDs (2015) (1)
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors (2020) (1)
An insight into the parasitic capacitances of SOI and bulk FinFET devices (2009) (1)
Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation (2001) (1)
Characterization Issues and ESD Sensitivity of RF-MEMS Switches (2006) (0)
Mid-power LEDs for lighting applications: degradation mechanisms and kinetics (2015) (0)
Measurement of the Electron Ionization Coefficient Temperature Dependence in InGaAs-based Heterojunction Bipolar Transistors (1996) (0)
Pulsed Measurements on Heterojunction Devices (2000) (0)
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy (2023) (0)
GaN HEMTs Devices: opportunities, challenges and issues (2013) (0)
Study of Impact Ionization and Light emission in Pseudomorphic HEMT using Monte Carlo Simulation (1999) (0)
Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs (1999) (0)
SRH non-radiative recombination in GaN-based LEDs: a study based on lifetime and DLTS measurements (2014) (0)
High Electric Field related Parasitic and Degradation phenomena in AlGaN/GaN power HEMTs (2012) (0)
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications (2014) (0)
Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study (2023) (0)
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs (2021) (0)
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation (2017) (0)
Electro-thermally activated degradation of InGaN-based green laser diodes (2014) (0)
Reliability of GaN-Based Power Devices (2018) (0)
Experimental Technique for Traps Spatial Localization in GaN HEMTs (2013) (0)
IRPS2013 - Workshop program Tuesday, April 16 (7:30 p.m. to 9:30 p.m.) (2013) (0)
ESD Sensitivity of GaN-Based Electronic Devices (2017) (0)
Reliability of RF-MEMS for high frequency applications (2009) (0)
Characterization of CMOS structures (0.6 um process) submitted to HBM and CDM ESD stress tests (1997) (0)
Degradation processes and origin in InGaN-based high-power photodetectors (2018) (0)
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs (2023) (0)
Current crowding as a major cause for InGaN LED degradation at extreme high current density (2021) (0)
Time-dependent degradation of hydrogen-terminated diamond MESFETs (2022) (0)
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells (2015) (0)
Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress (2014) (0)
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) (2016) (0)
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs (2022) (0)
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells (2012) (0)
Role of carbon in dynamic effects and reliability of 0.15-μm AlGaN/GaN HEMTs for RF power amplifiers (2022) (0)
Reliability oriented design of LED-based light sources (2013) (0)
Reliability Issues in GaN HEMTs related to traps and gate leakage current (2008) (0)
Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements (2020) (0)
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements (2020) (0)
List of contributors (2021) (0)
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs (2016) (0)
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC (2011) (0)
Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications (2006) (0)
Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes (2022) (0)
Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability (2015) (0)
Wide bandgap semiconductors, they're special (2015) (0)
Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs (2004) (0)
Degradation mechanisms of laser diodes for silicon photonics applications (2023) (0)
Thermal-activated degradation mechanism on Phosphor-Converted Light Emitting Diode (2008) (0)
A . 1 Assessment of Distributed-Cycling Schemes on 45 nm NOR Flash Memory Arrays (2012) (0)
Power module concepts for innovative reliable nitride based power devices and applications - The EU public funded project ‘InRel-NPower‘- (2018) (0)
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V (2019) (0)
Reliability of mid-power LEDs for lighting applications (2016) (0)
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations (2023) (0)
Selected papers from ESSDERC 2014 (2015) (0)
Extensive investigation of the electrical and optical characteristics of Gate Injection Transistors based on GaN (2010) (0)
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs (2006) (0)
Recent advancements in the reliability of GaN-based LEDs (2010) (0)
Author Index (2010) (0)
Breakdown triggering in PM-HEMTs studied by means of Monte Carlo simulator (1999) (0)
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) (2019) (0)
Turning bad into good: a water-splitting-active hole transporting material to preserve the performance of perovskite solar cells in humid environments (2020) (0)
Characterization Issues and Charge Trapping Effects on RF-MEMS switches (2007) (0)
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs (2019) (0)
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs (2021) (0)
Parasitic effects and reliability issues on GaN based HEMTs (2007) (0)
WOCSDICE 2001: XXV Workshop On Compound Semiconductor Devices and Integrated Circuits Held in Europe (2001) (0)
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters (2011) (0)
High temperature instabilities of GaN LEDs related to passivation (2007) (0)
Plasmon‐Assisted Operando Self‐Healing of Cu2O Photocathodes (2022) (0)
2011 IRPS tutorial program (2011) (0)
Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits (2007) (0)
Parasitic and Reliability Issues of GaN-Based High Electron Mobility Transistors (2010) (0)
Dependence of degradation on InGaN quantum well position: a study based on color coded structures (2020) (0)
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques (2005) (0)
Degradation mechanisms of white LEDs for lighting applications (2010) (0)
Innovative methodology for testing the reliability of LED based systems (2012) (0)
ESREF 2012 in cagliari (2013) (0)
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs (2013) (0)
Multiple Effects of the CdCl2 Activation Treatment on the Device Properties of CdTe/CdS Solar Cells by Monitoring the Annealing Temperature (2014) (0)
Schottky SiC Diodes in Power Applications (2002) (0)
CARATTERISTICHE, QUALITA' E CROMATICITA' DELLA LUCE A LED FEATURES, QUALITY AND CHROMATICITY OF THE LED LIGHT (2013) (0)
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements (2012) (0)
REVERSIBLEDEGRADATIONOFGAN LEDS RELATEDTOPASSIVATION (2007) (0)
Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach (2011) (0)
GaN Hemt Degradation induced by Reverse Gate Bias Stress (2009) (0)
DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime (1998) (0)
Evidence of mechanical degradation in microelectromechanical switches subjected to long-term stresses (2017) (0)
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs (2023) (0)
HBM and CDM ESD stress test results in 0.6 um CMOS structures (1997) (0)
Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion (2023) (0)
Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs (2007) (0)
Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS (2012) (0)
InRel-NPower, Innovative Reliable Nitride based Power Devices and Applications, Horizon 2020 (2018) (0)
Evidence for avalanche generation in reverse-biased InGaN LEDs (2019) (0)
Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's (1994) (0)
High temperature instabilities of ohmic contacts on Mg-doped gallium nitride (2007) (0)
Thermal Stress Effects on Organic-Thin-Film-Transistors (2016) (0)
Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids (2019) (0)
Thermal, optical, and electrical engineering of an innovative tunable white LED light engine (2014) (0)
Imaging and reliability of capacitive RF MEMS switches in III-V technology (2013) (0)
State of the art in the reliability of GaN-based LED (2010) (0)
Reliability of GaN-based optoelectronic devices: state of the art and perspectives (2010) (0)
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias (2005) (0)
Neutron induced damage in GaAs MESFETs (1996) (0)
FACTORS LIMITING THE MAXIMUM OPERATING VOLTAGE OF MICROWAVE DEVICES (2000) (0)
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode (2022) (0)
Characterization and analysis of trap-related effects in AlGaN – GaN (2007) (0)
Ageing mechanisms of 420 nm GaN HBLED (2011) (0)
Development ofESDprotection structures for BULK andSOTBCD6technology (2006) (0)
On-state breakdown measurements in GaAs MESFETs and InP-based HEMTs (1999) (0)
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling (2022) (0)
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing (2003) (0)
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes (2015) (0)
Luminescence properties of GaN LEDs after DC-aging (2003) (0)
On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes (2022) (0)
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations (2023) (0)
Correlation between permanent degradation of GaAs-based HEMT's and current DLTS spectra (1996) (0)
Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress (2023) (0)
Study of ESD breakdown using E-beam testing system (1995) (0)
Analysis and design of extreme intensity irradiation devices for research applications (2020) (0)
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics (2022) (0)
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study (2022) (0)
Effects of surface and buffer traps in passivated AlGaN-GaN HEMTs (2008) (0)
Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon (2021) (0)
A novel fast and versatile temperature measurement system for LDMOS transistors (2005) (0)
Analysis of degradation processes of UV‐A light emitting diodes stressed at constant current (2016) (0)
Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s (1998) (0)
Analysis of hot carrier aging degradation in GaN MESFETs (2004) (0)
Reverse-bias and ESD instabilities of InGaN-based LEDs (2010) (0)
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs (2003) (0)
Trapping and Detrapping Mechanisms in <italic></italic>-GaO Vertical FinFETs Investigated by Electro-Optical Measurements (2020) (0)
Resistive RF-MEMS Switches Characterization and Reliability (2005) (0)
Reliability of GaN-based LEDs (2004) (0)
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement (2008) (0)
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs (2009) (0)
Challenges for highly reliable GaN-based LEDs (2019) (0)
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress (2022) (0)
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon (2014) (0)
Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown (2021) (0)
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs (2004) (0)
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs (2001) (0)
Study of Neutron Damage in GaAs MESFETs-Nuclear Science, IEEE Transactions on (2004) (0)
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits (2023) (0)
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation (2003) (0)
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs (2022) (0)
How innovative light design can improve microalgae production (2022) (0)
Localized Damage in AlGaN/GaN HEMTs (2009) (0)
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors (2006) (0)
Experimental Study of Deep Levels in MESFETs (1996) (0)
Plasmon‐Assisted Operando Self‐Healing of Cu 2 O Photocathodes (Adv. Sustainable Syst. 3/2023) (2023) (0)
Degradation effects in InGaN/GaN light emitting diodes (2004) (0)
Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon (2019) (0)
Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes (2022) (0)
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon (2020) (0)
Multi-gate devices for the 32-nm node and beyond: advantages and issues (2008) (0)
Alternative MOS devices for the manufacture of high-density ICs (2007) (0)
New Issues on Characterization and Reliability of MEMS Switches (2008) (0)
Reliability aspects of GaN microwave devices (2003) (0)
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations (2021) (0)
White-light sources based on GaN laser diodes: analysis and application study (2018) (0)
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs (1999) (0)
Light Emission Measurements: A Promising Tool to Identify Hot Carrier Phenomena (1997) (0)
Performance and degradation of commercial UV‐C LEDs for disinfection purposes (2023) (0)
Modeling Hot-Electron Trapping in GaN-based HEMTs (2022) (0)
Kink and Cathodoluminescence in AlGaN/GaN HEMTs (2010) (0)
Degradation effects and origin in H-terminated diamond MESFETs (2020) (0)
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes (2018) (0)
Failure Mechanisms of GaN-Based Transistors in On-and Off- State (Invited) (2008) (0)
Charge trapping and degradation of Ga2O3 isolation structures for power electronics (2020) (0)
Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density (2020) (0)
Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence (2022) (0)
Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs (2022) (0)
Field- and time-dependent degradation of GaN HEMTs (2016) (0)
Normally-off HEMTs with p-GaN Gate: Stability and Lifetime Extrapolation (2016) (0)
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications (2016) (0)
Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics (2010) (0)
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier (2022) (0)
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions (2012) (0)
Characterization of self-heating effects in semiconductor resistors during transmission line pulses (2004) (0)
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes (2022) (0)
Analysis of efficiency-droop mechanisms in single-quantum-well InGaN/GaN light-emitting diodes (2011) (0)
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS (2014) (0)
High field and low temperature behaviour of Lely-grown 6H SiC buried gate JFETs (1999) (0)
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs (2008) (0)
Off-State Breakdown in GaAs Power HFETs (1999) (0)
Non-Radiative lifetime variation during the degradation of Blu-Ray InGaN Laser Diode (2009) (0)
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs (2003) (0)
RF-MEMS Switches Reliability for Long Term Spatial Applications (2007) (0)
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors (2014) (0)
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile (2021) (0)
Charge Trapping in GaN Power Transistors: Challenges and Perspectives (2021) (0)
Inactivating SARS-CoV-2 Using 275nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation (2021) (0)
Investigation of deep level defects in n-type GaAsBi (2022) (0)
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures (2011) (0)
Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics (2009) (0)
Analysis of the mechanisms limiting the reliability of retrofit LED lamps (2015) (0)
Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines (2005) (0)
Special Issue on Reliability (2019) (0)
Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density (2023) (0)
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch-stop layer (1998) (0)
Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability (2021) (0)
Integration of pentacene transistors on Parylene foil (2007) (0)
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs (2005) (0)
Trap-related effects in 6H-SiC buried-gate JFETs (2001) (0)
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs (2009) (0)
III-N optoelectronic devices: understanding the physics of electro-optical degradation (2023) (0)
Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology (2009) (0)
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques (2010) (0)
Optimization of ESD protection structures suitable for BCD6 smart power technology (2003) (0)
Study and characterization of GaN MOS capacitors : planar versus trench topographies (0)
Reliability in III-Nitride Devices (2017) (0)
Characterization of GaN based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy (2018) (0)
Reliability aspects of GaN-HEMTs on composite substrates (2008) (0)
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs (2001) (0)
Chip-Level Degradation of InGaN-Based Optoelectronic Devices (2018) (0)
Transient performance, breakdown and degradation of power transistors GaN on Si technology (2013) (0)
Study of the factors that limit the reliability ofGaN-based LEDs at high temperature levels (2008) (0)
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs (2022) (0)
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature (2021) (0)
A review offailure modesandmechanisms ofGaN-based HEMTs (2007) (0)
Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements (2021) (0)
Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells (2023) (0)
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs (2009) (0)
Low frequency noise characterization of the GaN LEDs (2004) (0)
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis (2012) (0)
Study of GaN HEMTs degradation by numerical simulations of scattering parameters (2010) (0)
Interpretation of buffer-trap effects in AlGaN/GaN HEMTs (2007) (0)
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors (2022) (0)
Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology (2013) (0)
ESD in Smart Power Processes (2003) (0)
UV LED reliability: degradation mechanisms and challenges (2022) (0)
Indium Zinc Oxide as an alternative to Indium Tin Oxide in OLEDs Technology (2008) (0)
HEMTs ON SIC (2005) (0)
Three-terminal off-state breakdown in AlGaAs/GaAs power HFETs: a temperature-dependent analysis of the gate reverse current (1999) (0)
Study of time-dependent degradation of reverse biased AlGaN/GaN HEMTs (2012) (0)
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations (2002) (0)
Performance and reliability of GaAs based power HFETs (1997) (0)
Editorial (2012) (0)
TCAD modeling of bias temperature instabilities in SiC MOSFETs (2021) (0)
UVC LED reliability and its effect on disinfection systems design (2023) (0)
Analysis and design of SARS-CoV-2 disinfection chambers based on UVC LEDs (2022) (0)
High temperature degradation of ohmic contacts on p-GaN (2007) (0)
Origin of the low-forward leakage current in InGaN-based LEDs (2019) (0)
Instabilities and degradation in GaN-based devices (2003) (0)
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode (2021) (0)

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