George D. Watkins

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George D. Watkins

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Physics

George D. Watkins's Degrees

Masters Physics Stanford University

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According to Wikipedia, George Daniels Watkins is an American solid-state physicist. Biography Watkins was born in Evanston, Illinois and received his bachelor's degree in physics from Randolph-Macon College in 1943. He earned his master's degree in 1947 and his Ph.D. in 1952 from Harvard University with the thesis A R. F. Spectrometer with Applications to Studies of Nuclear Magnetic Resonance Absorption in Solids. From 1952 to 1975 he did research in solid state physics at the General Electric Research Laboratory in Schenectady, New York. During his time at General Electric, he was also an adjunct professor at Rensselaer Polytechnic Institute from 1962 to 1965 and at the State University of New York, Albany from 1969 to 1973. From 1975 until his retirement in 1996, he was "Sherman Fairchild Professor for Physics'" at Lehigh University.

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George D. Watkins's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Radiation effects in semiconductors (1971) (800)
Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center (1961) (525)
DEFECTS IN IRRADIATED SILICON: ELECTRON PARAMAGNETIC RESONANCE OF THE DIVACANCY (1965) (510)
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center (1964) (507)
Gravitational radiation from colliding vacuum bubbles. (1992) (337)
Gravitational waves from first-order cosmological phase transitions. (1992) (294)
Electron Spin Resonance of Mn ++ in Alkali Chlorides: Association with Vacancies and Impurities (1959) (292)
Observation of a Spin-Peierls Transition in a Heisenberg Antiferromagnetic Linear-Chain System (1975) (251)
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO (2005) (249)
1.8-, 3.3-, and 3.9-mu Bands in Irradiated Silicon: Correlations with the Divacancy (1966) (245)
DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER (1961) (244)
Spin-Peierls transitions in magnetic donor-acceptor compounds of tetrathiafulvalene (TTF ) with bisdithiolene metal complexes (1976) (219)
Negative-U Properties for Point Defects in Silicon (1980) (212)
Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in Diamond (1973) (202)
PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON (1965) (197)
Intrinsic defects in silicon (2000) (189)
EPR Observation of the Isolated Interstitial Carbon Atom in Silicon (1976) (184)
Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron (1975) (184)
NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON (1964) (183)
The configuration and diffusion of isolated oxygen in silicon and germanium (1964) (183)
EPR of Cr 2+ in II-VI lattices (1974) (180)
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K (2005) (176)
SPIN RESONANCE IN ELECTRON IRRADIATED SILICON (1959) (153)
Absorption of oxygen in silicon in the near and the far infrared (1970) (146)
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs (1968) (134)
Gauged Q balls. (1989) (128)
Identification of an interstitial carbon‐interstitial oxygen complex in silicon (1987) (123)
Bistable interstitial-carbon-substitutional-carbon pair in silicon. (1990) (121)
Detection of interstitial Ga in GaN (2000) (98)
An ODMR study of a luminescence excitation process in ZnSe:Fe (1983) (98)
SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION (1961) (97)
Linear Combination of Atomic Orbital-Molecular Orbital Treatment of the Deep Defect Level in a Semiconductor: Nitrogen in Diamond (1970) (95)
Interstitial boron in silicon: A negative-Usystem (1980) (94)
Hydrogen-related defects in polycrystalline CVD diamond. (1996) (92)
Recombination-enhanced migration of interstitial aluminum in silicon (1979) (90)
Defects in irradiated silicon: EPR of the tin-vacancy pair (1975) (89)
Optical detection of magnetic resonance in electron-irradiated GaN (1997) (88)
Optically detected magnetic resonance of the zinc vacancy in ZnSe (1980) (84)
Late-time cosmological phase transitions: Particle-physics models and cosmic evolution. (1992) (82)
Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon (1970) (80)
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair (1967) (76)
Motion of Mn ++ -Cation Vacancy Pairs in NaCl: Study by Electron Spin Resonance and Dielectric Loss (1959) (75)
ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON (1961) (73)
A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper (1969) (73)
Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen (1984) (69)
Theory of interstitial transition-metal impurities in silicon (1981) (68)
Properties of the Interstitial in the Diamond-Type Lattice (1971) (68)
Carbon Interstitial in the Diamond Lattice (1973) (66)
Origin of the 0.97 eV luminescence in irradiated silicon (1983) (65)
Microscopic identification of electronic defects in semiconductors (1985) (65)
EPR of a trapped vacancy in boron-doped silicon (1976) (62)
EPR observation of close Frenkel pairs in irradiated ZnSe (1974) (60)
Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance (2004) (60)
Pressure-temperature phase diagram, inverse isotope effect, and superconductivity in excess of 13 K in kappa -(BEDT-TTF)2Cu (1991) (60)
Negative-U defect: Interstitial boron in silicon. (1987) (59)
Negative-UProperties for Interstitial Boron in Silicon (1982) (58)
Diffusion of oxygen in silicon (1982) (56)
Resonant interactions of optical phonons with acceptor continuum states in silicon (1977) (56)
Optically detected magnetic-resonance observation of the isolated zinc interstitial in irradiated ZnSe. (1987) (54)
Native Defects and their Interactions with Impurities in Silicon (1997) (54)
Microscopic structure and multiple charge states of a PtH2 complex in Si. (1995) (53)
Bistable defect in silicon: The interstitial-carbon-substitutional-carbon pair. (1988) (51)
Extension of the Parker bound on the flux of magnetic monopoles. (1993) (51)
Optically detected magnetic resonance study of SiC:Ti. (1985) (51)
OPTICAL DETECTION OF ELECTRON PARAMAGNETIC RESONANCE IN ELECTRON-IRRADIATED GAN (1999) (50)
Optical Detection of Magnetic Resonance for an Effective-Mass-like Acceptor in6H-SiC (1980) (49)
Negative-U properties for defects in solids (1984) (47)
Negative-U properties for defects in solids (1984) (47)
INTENSITIES OF NUCLEAR MAGNETIC RESONANCES IN CUBIC CRYSTALS (1953) (47)
Electronic structure of hydrogen- and alkali-metal-vacancy complexes in silicon (1984) (45)
The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures (2008) (45)
THE PURE NUCLEAR ELECTRIC QUADRUPOLE RESONANCE OF N$sup 14$ IN THREE MOLECULAR SOLIDS (1952) (45)
Carbon and oxygen isotope effects in the 0.79 eV defect photoluminescence spectrum in irradiated silicon (1984) (44)
Many-Electron Effects for Deep Levels in Solids: The Lattice Vacancy in Diamond (1974) (44)
Deep levels in semiconductors (1983) (43)
Vacancies, interstitials, and close Frenkel pairs on the zinc sublattice of ZnSe. (1996) (42)
New vacancy-related defects in n-type silicon. (1986) (40)
The identity of the EPR A-center and the self-activated luminescence center in ZnS: Cl (1973) (40)
Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance (2004) (38)
Preparation and properties of some tetrathiafulvalene donor-acceptor compounds with bis(dithiolene) metal complexes (1975) (38)
Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon (1982) (37)
Effect of general relativity on a near-Earth satellite in the geocentric and barycentric reference frames. (1988) (35)
Level positions of interstitial transition-metal impurities in silicon (1982) (35)
Many-electron effects for interstitial transition-metal impurities in silicon (1982) (34)
Intrinsic defects in II–VI semiconductors (1996) (34)
Structure of gold in silicon. (1991) (33)
Metastable defects in silicon: hints for DX and EL2? (1991) (31)
Optically Induced Migration of Interstitial Zinc in ZnSe: Caught in the Act (1998) (30)
Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon. (1993) (30)
EPR of defects in semiconductors: Past, present, future (1999) (29)
Passivation of shallow impurities in Si by annealing in H2 at high temperature (1991) (27)
Observation by optically detected magnetic resonance of Frenkel pairs in irradiated ZnSe. (1986) (26)
Optical detection of magnetic resonance of the zinc vacancy in ZnSe via magnetic circular dichroism. (1993) (26)
OPTICALLY DETECTED ELECTRON PARAMAGNETIC RESONANCE OF ALN SINGLE CRYSTALS (1999) (25)
Determination of the PIn antisite structure in InP by optically detected electron-nuclear double resonance. (1987) (24)
Defect Metastability and Bistability (1991) (24)
EPR investigation of Pt- in silicon. (1992) (23)
Electron Paramagnetic Resonance of Point Defects in Solids, with Emphasis on Semiconductors (1975) (23)
Optically detected electron paramagnetic resonance of arsenic antisites in low‐temperature GaAs layers (1992) (23)
Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon (1972) (22)
ODMR studies of antisite-related luminescence in GaP☆ (1982) (21)
35 Years of Defects in Semiconductors: What Next? (1993) (20)
An LCAO-MO treatment of the vacancy in diamond (1971) (20)
Intrinsic defects in ZnO: A study using optical detection of electron paramagnetic resonance (2006) (20)
Optical detection of magnetic resonance of nitrogen and nickel in high-pressure synthetic diamond. (1995) (19)
Properties of tetrathiotetracene nickel bis -(ethylene-1, 2-dithiolene), a new quasi-one-dimensional conductor (1977) (19)
Alignment of thermal donors in Si by uniaxial stress (1987) (19)
EPR Studies of Lattice Defects in Semiconductors (1976) (18)
Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair. (1990) (18)
Negative-U properties of the lattice vacancy in silicon (1983) (18)
Electron paramagnetic resonance ofCu(d9)in GaN (2000) (18)
Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon (1992) (18)
Negative-U Properties for Point Defects in Silicon * (1980) (17)
ELECTRONIC STRUCTURE AND MIGRATIONAL PROPERTIES OF INTERSTITIAL ZINC IN ZNSE (1999) (17)
Sulfur-related metastable luminescence center in silicon (1998) (17)
Vacancy-model interpretation of EPR spectrum of Si:Pt- (1992) (17)
Cosmological texture is sensitive to Planck-scale physics. (1992) (17)
Isotope effects in the EPR spectrum of a tin-vacancy pair in silicon (1975) (17)
Origin of the 6885-cm-1 luminescence lines in ZnO : Vanadium versus copper (2005) (16)
Tetrathiotetracenenickel bis(ethylene-1,2-dithiolene). A new one-dimensional organic conductor (1977) (16)
Magnetic circular dichroism of the 1.404-eV interstitial nickel absorption transition in high-pressure synthetic diamond (1999) (16)
Metastable cosmic strings in realistic models. (1992) (15)
AN EPR STUDY OF THE LATTICE VACANCY IN SILICON (1963) (15)
Sign of the Cubic Field Splitting for Mn ++ in ZnS (1958) (15)
Direct measurement of exchange as a function of separation for discrete donor-acceptor pairs in ZnSe. (1988) (15)
Thermal and magnetic study of exchange in the quasi‐1‐D molecular compound, TTF⋅PtS4C4(CF3)4 (1978) (14)
What We Have Learned about Intrinsic Defects in Silicon: A Help in Understanding Diamond? (2001) (13)
LCAO-MO Cluster Model for Localized States in Covalent Solids (1973) (13)
The Jahn-teller effect for Cr2+ in II–VI crystals (1971) (13)
Thermal-donor-related isoelectronic center in silicon which can bind up to four excitons. (1986) (13)
Irradiation effects in II-VI compounds (1971) (13)
Electron paramagnetic resonance ofPt−in silicon: Isolated substitutional Pt versus Pt-Pt pairs (1984) (13)
Microwave multiphoton Rabi oscillations. (1993) (12)
Chapter 1 EPR and ENDOR Studies of Defects in Semiconductors (1998) (12)
Optical detection of cross relaxation in SiC (1982) (12)
RADIATION-PRODUCED ABSORPTION BANDS IN SILICON: PIEZOSPECTROSCOPIC STUDY OF A GROUP-V ATOM-DEFECT COMPLEX. (1972) (12)
Calculation of the Physical Properties of Solids by the Extended Huckel Theory: A Reply (1971) (12)
Exchange and radiative lifetimes for close Frenkel pairs on the zinc sublattice of ZnSe. (1996) (12)
Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance (2004) (11)
MOLECULAR DESIGN OF SOLID‐STATE SYSTEMS. ORGANIC‐METAL COMPLEX φ‐DONOR‐ACCEPTOR COMPOUNDS * (1978) (11)
Multiphoton Resonance with One to Many Cycles. (1996) (11)
Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics (1997) (11)
Lattice Vacancies and Interstitials in Silicon (1977) (10)
Isotope effects and novel level crossings observed by ODMR in 6H SiC(Ti) (1981) (10)
Stress-induced alignment of anisotropic defects in crystals (1961) (10)
New S = 1 EPR Center in Irradiated Diamond (1971) (10)
Short-pulse microwave ionization of Na Rydberg atoms. (1994) (10)
Quantum interference in microwave multiphoton transitions. (1995) (10)
Optical detection of electron-nuclear double resonance for a donor in oxygen-doped GaP. (1989) (9)
Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon (2006) (9)
Thermal Donors in Silicon - 1986 (1986) (9)
Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress. (1993) (8)
Theory defects in silicon: Recent calculations using finite molecular clusters (1983) (8)
Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon (1987) (8)
Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2 (1992) (8)
Optical properties of group-V atom-vacancy pairs in silicon (1989) (8)
Identity of the Nl8 Epr Spectrum with Thermal Donors in Silicon (1985) (8)
Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te. (1992) (8)
EPR identification of the single-acceptor state of interstitial carbon in silicon. (1990) (8)
A binuclear rhodium(I) complex with two tetraphosphine ligands at 100 K (2000) (7)
Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN (2002) (7)
Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy (2002) (7)
Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe (1999) (7)
Yellow Luminescence and Associated Odmr in Movpe Gan: A Comparison of Defect Models (1996) (7)
Intrinsic defects in GaN: what we are learning from magnetic resonance studies (2003) (6)
Different PIn antisites in n- and p-type InP. (1993) (6)
Reorientation of Stress Induced Alignment of Thermal Donors in Silicon (1992) (6)
Novel Electronic Circuitry (1998) (6)
Optically detected magnetic resonance of nonradiative recombination via the AsGa antisite in p-type GaAs. (1986) (6)
One-dimensional magnetic variety in a family of TTF-bis-dithiolene metal complex compounds. [TTF. MSC (CF) (M = Cu, Au, Pt, Ni)] (1976) (6)
Comment on "Resonant bonds in symmetry-lowering distortion around a silicon divacancy" (1995) (6)
LCAO Calculations for the Boron and Nitrogen Interstitial in the Diamond Lattice (1974) (6)
Electron paramagnetic resonance of multistable interstitial-carbon-substitutional-group-V-atom pairs in silicon. (1993) (5)
Optically detected magnetic resonance of a localized spin-triplet midgap center in GaAs. (1985) (5)
Migration of Interstitial Boron in Silicon (1986) (5)
Magneto-Raman scattering from Al acceptors in SiC (1981) (5)
MICROSCOPIC VIEW OF RADIATION DAMAGE IN SEMICONDUCTORS USING EPR AS A PROBE. (1969) (5)
Optically detected electron-nuclear double resonance of the S=1 excited state of the PGa-YP defect in GaP: The neighboring 31P and 69Ga and 71Ga shells. (1994) (5)
Relationship between the pseudo-Jahn-Teller effect and chemical rebonding. (1988) (5)
Optically detected magnetic resonance of the AsGa antisite via luminescence in GaAs (1985) (4)
ODMR Observation of Close Frenkel Pairs in Electron-Irradiated ZnSe (1986) (4)
ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN (1997) (4)
A Hydrogen-Related Defect in Polycrystalline CVD Diamond (1995) (4)
Spectroscopic Identification of a Transition Metal-H Complex in Silicon (1993) (4)
Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment (1996) (4)
The Multiconfigurational Carbon-Antimony Pair in Silicon (1991) (4)
Frenkel pairs on the two sublattices of ZnTe (2000) (4)
Frenkel Pairs on the Te Sublattice of ZnTe? An ODMR Study (1993) (4)
Preferential Alignment of Thermal Donors in Si (1986) (4)
Optically detected electron-nuclear double resonance of S=1 states of defects in semiconductors: PGa-YP in GaP. (1991) (4)
Fermi Resonance Effects on the Vibration Modes of Hydrogen-Passivated Boron in Silicon (1989) (4)
Modulated photoabsorption in strained Ga1-xInxAs/GaAs multiple quantum wells. (1991) (4)
Excitation spectroscopy of the In-related isoelectronic bound exciton under uniaxial stress and magnetic-field perturbations. (1986) (4)
Anisotropic-Defect Production in Compound Semiconductors by Electron Irradiation (1982) (4)
Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR (1992) (3)
Characterization of an Anion Antisite Defect as a Deep Double Donor in InP (1991) (3)
Gold in silicon and other analogous donors and acceptors (1995) (3)
Endor-Investigation OF Al ++ AND Al ++-Al- PAIRS IN SILICON (1985) (3)
Publisher's Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B 69, 045207 (2004)] (2004) (3)
Absence of dichroism for the DX optical-bleaching transients in Al0.35Ga0.65As:Te. (1992) (3)
The electronic structure of interstitial zinc in its two Td sites in ZnSe (1999) (3)
Magneto-optical properties of the DX centre in Al0.35Ga0.65As:Te (1991) (2)
A radiation-produced defect in GaN displaying hyperfine structure with three Ga atoms (2001) (2)
Vacancy model for substitutional Ni-, Pd-, Pt-, and Au0 in silicon. (1995) (2)
Optical detection of EPR and electron-nuclear double resonance for substitutional MnIn-(d5) in InP:Sn. (1992) (2)
The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon (1993) (2)
Optically Detected Magnetic Resonance of Zinc Interstitials and Frenkel Pairs in ZnSe (1987) (2)
Spin-Peierls transitions in Heisenberg antiferromagnetic linear chain systems. [TTF. MSâCâ(CFâ)â; TTF = tetrathiafulvalene, M = Cu or Au] (2008) (2)
Automatic calibration circuit for a deep level transient spectrometer (1980) (2)
Optical detection of electron-nuclear double resonance for an S=1 luminescent center in GaP:O. (1991) (2)
The spin Hamiltonian for Cr2+ in CdS (1971) (2)
Defects in Semiconductors (1991) (2)
ODMR-MCD Study of the Zinc Vacancy and Related Complexes in ZnSe (1986) (2)
Negative-U for Point Defects in Silicon, (1980) (1)
Spectroscopy of Proton Implanted GaN (1999) (1)
Intrinsic Defects in GaN and ZnO: A Study by Optical Detection of Electron Paramagnetic Resonance (2005) (1)
Electronic structure calculation of 3d-transition metal point defects in silicon (1985) (1)
Electron paramagnetic resonance of a Au-Au pair in heat-treated silicon. (1996) (1)
Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP (1991) (1)
Optically Detected Magnetic Resonance of Copper Doped Gallium Phosphide (1985) (0)
One-dimensional magnetic variety in a family of TTF-bis-dithiolene metal complex compounds. [TTF. MS/sub 4/C/sub 4/ (CF/sub 3/)/sub 4/ (M = Cu, Au, Pt, Ni)] (1976) (0)
Intrinsic Point Defects in Semiconductors 1999 (2013) (0)
Au Microstructure and the Functional Properties of Ni / Au Finishes On Ceramic IC l 3 U 224 Packages z $ ; rc ' Q 7 PJF (2003) (0)
Vacancy-Model Interpretation of EPR Spectrum of Platinum(1-)-Doped Silicon (1992) (0)
Materials Research Society Symposia Proceedings. Volume 46. Microscopic Identification of Electronic Defects in Semiconductors Held at San Francisco, California on 15-18 April 1985, (1985) (0)
Uniaxial Stress Alignment of Pd- and Ni- in Silicon (1992) (0)
Photoluminescence Identification of Frenkel Pairs on the Zn-Sublattice of ZnTe (1997) (0)
Microscopic Identification of Electronic Defects in Semiconductors: Symposium Held April 15-18, 1985, San Francisco, California, U.S.A (1985) (0)
X-ray-diffraction study of a thermomechanically detwinned single crystal of YBa2Cu3O6+x. (1990) (0)
Ionization enhanced migration of radiation produced defects in silicon (1979) (0)
Optically Detected Magnetic Resonance of Arsenic Antisites in GaAs MBE Layers Grown at Low Temperatures (1991) (0)
PHASE TRANSITIONS IN POLYMER BLENDS AND BLOCK COPOLYMERS INDUCED BY SELECTIVE DILATION WITH SUPERCRITICAL CO 2 J. J. WATKINS", G. D. BROWN', M. A. POLLARD 2, V. S. RAMACHANDRARAO' and T. P. RUSSELL 2 (2015) (0)
Zinc Vacancy and its related Complexes in ZnSe (1986) (0)
A Grain Boundary Defect in Polycrystalline Films (1995) (0)
Influence of Optical Injection on the Migration of Intrinsic Zinc in ZnSe (1998) (0)
Spin-Peierls transitions in Heisenberg antiferromagnetic linear chain systems. [TTF. MS/sub 4/C/sub 4/(CF/sub 3/)/sub 4/; TTF = tetrathiafulvalene, M = Cu or Au] (1976) (0)
Harris, Newton, and Watkins Respond (1983) (0)
Radiation Damage Processes in Silicon (1981) (0)
Publisher’s Note: Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance [Phys. Rev. B69, 045208 (2004)] (2004) (0)
Different configurations of the PIn antisite in n- and p-type InP (1990) (0)
University of Birmingham Extruding the vortex lattice (2019) (0)
Defects and Defect Processes in GaN (2003) (0)
Magnetic Resonance Studies of Solid-State Hydrogen and Hydrogen-Related Defects (1997) (0)
SPECTROSCOPY OF PROTON IMPLANTED (1998) (0)
Magnetic Susceptibility and Electron Spin Resonance—Experimental (1959) (0)
ODEPR of Intrinsic Defects in GaN (2001) (0)

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