Gerard Adriaan Acket

Gerard Adriaan Acket's AcademicInfluence.com Rankings

Engineering

#6779

World Rank

#8121

Historical Rank

Electrical Engineering

#2421

World Rank

#2536

Historical Rank

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Engineering

Gerard Adriaan Acket's Degrees

PhD Electrical Engineering Delft University of Technology

Why Is Gerard Adriaan Acket Influential?

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According to Wikipedia, Gerard Adriaan Acket is a Dutch electrical engineer and emeritus professor. He worked in the faculties of electrical engineering at Delft University of Technology between 1981 and 1988 and Eindhoven University of Technology between 1991 and 2000. His workfield was optoelectronics.

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Gerard Adriaan Acket's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

The influence of feedback intensity on longitudinal mode properties and optical noise in index-guided semiconductor lasers (1984) (246)
Electron lifetime and diffusion constant in germanium‐doped gallium arsenide (1974) (72)
Kink power in weakly index guided semiconductor lasers (1995) (54)
Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection (2000) (47)
On the electron mobility and the donor centres in reduced and lithium-doped rutile (TiO2) (1966) (43)
Low-frequency mode-hopping optical noise in AlGaAs channeled substrate lasers induced by optical feedback (1983) (38)
Modeling and performance analysis of WDM transmission links employing semiconductor optical amplifiers (2001) (35)
Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs (1971) (30)
Strained layer GaAs1−yPy‐AlGaAs and InxGa1−xAs‐AlGaAs quantum well diode lasers (1993) (24)
Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniques (1967) (23)
Determination of the negative differential mobility of n-type gallium arsenide using 8 mm-microwaves (1967) (22)
Single-pass gain measurements on optically pumped Al x Ga (1-x) As-Al y Ga (1-y) As double-heterojunction laser structures at room temperature (1977) (20)
Low-loss low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation (1999) (17)
Electric transport in N-type Fe2O3 (1966) (16)
Observation of high-field domains in n type indium phosphide (1971) (16)
Hall-measurements on slightly reduced rutile (TiO2) (1964) (16)
Energy relaxation time of hot electrons in GaAs (1968) (15)
Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior (1998) (10)
Note on the conduction mechanism of vanadium sesquioxide (1962) (10)
The effect of active layer thickness on lateral waveguiding in narrow-stripe gain-guided AlGaAs DH laser diodes (1983) (10)
Reduced build-up of domains in sheet-type gallium-arsenide gunn oscillators (1968) (9)
Diffraction-limited circular single spot from phased array lasers. (1988) (9)
On electrical conduction in reduced rutile (1964) (8)
Diagnostics of asymmetrically coated semiconductor lasers (1991) (7)
Determination of the Hall-mobility of hot electrons in gallium-arsenide using 8 mm-microwaves (1967) (6)
The low-temperature velocity-field characteristic of n-type gallium arsenide (1969) (6)
Relaxation oscillations and recombination in epitaxial N-type gallium arsenide (1971) (5)
Controlled Anodic Oxidation for High Precision Etch Depth in AlGaAs III‐V Semiconductor Structures (1998) (5)
LPE growth and properties of GaP‐ (AlGa)As‐GaAs heterostructures as a function of the GaP substrate roughness (1975) (5)
Measurements of the bulk-conductivity of slightly reduced rutile (TiO2) parallel and perpendicular to the c-axis (1963) (5)
Phase-Locked Index-Guided Semiconductor Laser Arrays (1989) (4)
Relaxation oscillations due to impact ionisation in epitaxial sheet-type Gunn oscillators (1969) (4)
The influence of doping fluctuations on limited space-charge accumulation in n-type gallium arsenide (1968) (2)
Optical-Feedback Effects In Single-Mode Semiconductor Lasers: Multistability, Hysteresis, Fluctuations And Optical Chaos (1985) (2)
Visible-Wavelength Laser Diodes (1999) (1)
Lateral thermal waveguiding in low-confinement edge-emitting laser diodes for very high power operation (1998) (1)
Hot Electron Injection Laser: The Internal Base Potential (2001) (1)
Strained Layer Quantum Well Semiconductor Lasers (1993) (1)
Variation of kink power with cavity length in weakly index guided semiconductor lasers (1994) (1)
Continuous wave operation of low confinement asymmetric structure diode lasers (1999) (1)
Short wavelength (µ = 626-nm) GaInP/AlGaInP laser diode with a multiquantum well active layer (1990) (1)
Semiconductor lasers for optical communication (1976) (1)
Far field broadening due to near field phase distortion at contact layers in AlGaAs/GaAs GRIN-MQW lasers (1992) (1)
Asymmetric current injection for polarization stabilization in vertical-cavity surface-emitting lasers (1999) (1)
Index-guided GaAs/AlGaAs quantum well lasers grown by MOVPE (1989) (1)
Intermixing in InGaAs/GaAs structures for mirror protection in high power laser (1997) (1)
Foreword to the special issue on semiconductor lasers (1983) (1)
Optical Feedback in Index-Guided Semiconductor Lasers (1984) (0)
HIGH-FREQUENCY CONDUCTIVITY AND ENERGY RELAxATION OF HOT ELECTRONS IN GaAs (1969) (0)
Polarisation issues in GaAs-based vertical cavity surface emitting lasers (1998) (0)
Modeling and performance analysis of WDM transmission links employing semiconductor optical amplifie-Lightwave Technology, Journal of (2001) (0)
Thermal lateral waveguiding in gain-guided, low confinement laser diodes (1997) (0)
Low-confinement GaAs-AlGaAs symmetric and asymmetric laser diode structures for high power operation (1998) (0)
Semiconductor Lasers : ECO1 23 September 1988, Hamburg, Federal Republic of Germany (1989) (0)
Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers (1990) (0)
Uv / blue-emitting phosphor-device with efficient conversion of UV / blue light into visible light (1998) (0)
Optical Feedback Noise Characteristics of Semiconductor Lasers (1984) (0)
Introduction to special issue on semiconductor lasers (1995) (0)
Method of manufacturing a DFB laser diode and a DFB laser diode (2000) (0)
Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure (1996) (0)
Dispositf a diode electroluminescente uv/bleue a phosphore a conversion efficace de la lumiere uv/bleue en lumiere visible (1998) (0)
A semiconductor diode laser and its manufacturing method (1995) (0)
Hot Electron Injection Laser Controlled Carrier-Heating Induced Gain Switching (2004) (0)
GaAIAs Power Laser-diodes by MO-VPE Technology (1986) (0)
Physical properties of transferred-electron and avalanche microwave devices (1969) (0)
Asymmetric, Low Confinement GaAs/AIGas DQW Laser Diode with Optical Trap Layer for High Power Operation (1998) (0)
Growth and Performance of GaInP/A1GaInP Visible Light Emitting Laser-Diodes, (1992) (0)
An optical assembly with a phase-locked laser diode coupled line. (1987) (0)
Single-pass gain measurements on optically pumped Al/sub x/Ga/sub 1-x/As--Al/sub y/Ga/sub 1-y/As double-heterojunction laser structures at room temperature (1977) (0)

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