Gérard Ghibaudo

Q: What Schools Are Affiliated With Gérard Ghibaudo

Gérard Ghibaudo is affiliated with the following schools: Grenoble Alpes University, Grenoble Institute of Technology, Université Savoie Mont Blanc, Institut national des sciences appliquées de Lyon

Gérard Ghibaudo's AcademicInfluence.com Rankings

Gérard Ghibaudo

Engineering

#3333

World Rank

#4393

Historical Rank

Applied Physics

#594

World Rank

#614

Historical Rank

Electrical Engineering

#729

World Rank

#793

Historical Rank

engineering Degrees

Download Badge

Engineering

Gérard Ghibaudo's Degrees

PhD Electrical Engineering Grenoble Institute of Technology

Why Is Gérard Ghibaudo Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Gérard Ghibaudo's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors (1991) (627)
New method for the extraction of MOSFET parameters (1988) (600)
Review on high-k dielectrics reliability issues (2005) (483)
Electrical noise and RTS fluctuations in advanced CMOS devices (2002) (318)
Ultimately thin double-gate SOI MOSFETs (2003) (241)
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors (2010) (173)
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks (2015) (159)
Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs (2004) (149)
Ionizing radiation induced leakage current on ultra-thin gate oxides (1997) (148)
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices (2001) (138)
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures (1995) (127)
Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling (2006) (126)
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects (2007) (125)
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment (2002) (117)
Device and circuit cryogenic operation for low-temperature electronics [Book Review] (2002) (114)
Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs (1990) (113)
Characterization and modeling of hysteresis phenomena in high K dielectrics (2004) (104)
3DVLSI with CoolCube process: An alternative path to scaling (2015) (103)
Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress (2004) (102)
Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs (2008) (101)
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET (2008) (99)
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow (1983) (98)
Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET (2008) (95)
Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs (2007) (95)
On the theory of carrier number fluctuations in MOS devices (1989) (93)
Modified transmission-line method for contact resistance extraction in organic field-effect transistors (2010) (91)
75 nm damascene metal gate and high-k integration for advanced CMOS devices (2002) (88)
Critical MOSFETs operation for low voltage/low power IC's: ideal characteristics, parameter extraction, electrical noise and RTS fluctuations (1997) (85)
Revisited parameter extraction methodology for electrical characterization of junctionless transistors (2013) (83)
Experimental and theoretical study of electrode effects in HfO2 based RRAM (2011) (82)
How far will silicon nanocrystals push the scaling limits of NVMs technologies? (2003) (80)
A revised analysis of dry oxidation of silicon (1983) (76)
Low-temperature electrical characterization of junctionless transistors (2013) (76)
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations (2016) (73)
Experimental and theoretical investigation of nonvolatile memory data-retention (1999) (71)
Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses (2014) (70)
Impact of scaling down on low frequency noise in silicon MOS transistors (1992) (70)
Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) silicon (2004) (68)
Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors (2004) (68)
A New Technique to Extract the Source/Drain Series Resistance of MOSFETs (2009) (68)
Theory of direct tunneling current in metal–oxide–semiconductor structures (2002) (68)
Semianalytical Modeling of Short-Channel Effects in Lightly Doped Silicon Trigate MOSFETs (2008) (66)
Model for drain current RTS amplitude in small-area MOS transistors (1992) (66)
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width (2013) (60)
Experimental determination of short-channel MOSFET parameters (1985) (60)
Comprehensive and Accurate Parasitic Capacitance Models for Two- and Three-Dimensional CMOS Device Structures (2012) (59)
Role of stress on the parabolic kinetic constant for dry silicon oxidation (1984) (59)
Exploring the Charge Transport in Conjugated Polymers (2017) (59)
Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs (2008) (56)
A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs (1987) (55)
Low-frequency noise in junctionless multigate transistors (2011) (55)
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack (2006) (55)
New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs (2008) (55)
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films (1996) (54)
Brief review of the MOS device physics for low temperature electronics (1994) (54)
A compact drain current model of short-channel cylindrical gate-all-around MOSFETs (2009) (54)
Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures (1996) (53)
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric (2003) (53)
Grain boundary composition and conduction in HfO2: An ab initio study (2013) (53)
Analysis of the kink effect in MOS transistors (1990) (52)
Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs (2012) (51)
Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs (2012) (50)
Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs (2005) (48)
An analytical model of conductance and transconductance for enhanced-mode MOSFETs (1986) (48)
Low-Frequency Noise Investigation and Noise Variability Analysis in High- $k$/Metal Gate 32-nm CMOS Transistors (2011) (47)
Essential Effects on the Mobility Extraction Reliability for Organic Transistors (2018) (47)
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration (2009) (47)
Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors (2005) (47)
Carrier mobility in organic field-effect transistors (2011) (46)
Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides (2003) (45)
Low temperature characterization of 14nm FDSOI CMOS devices (2014) (45)
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics (2000) (44)
Accelerated wear-out of ultra-thin gate oxides after irradiation (2003) (44)
Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices (2001) (43)
Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature (1995) (43)
Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs (2014) (43)
Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories (2004) (43)
Analytical modeling of organic solar cells and photodiodes (2011) (43)
Characterization of the effective mobility by split C(V) technique in sub 0.1 μm Si and SiGe PMOSFETs (2005) (42)
Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width (2012) (42)
Large-Scale Time Characterization and Analysis of PBTI In HFO2/Metal Gate Stacks (2006) (42)
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory (2014) (42)
Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs (2011) (41)
Quasi-breakdown in ultrathin gate dielectrics (1997) (40)
Analytical modelling of the MOS transistor (1989) (40)
Low-frequency noise and fluctuations in advanced CMOS devices (2003) (40)
Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors (1996) (40)
Origin of low-frequency noise in pentacene field-effect transistors (2011) (40)
Degradation of floating-gate memory reliability by few electron phenomena (2006) (39)
New method for parameter extraction in deep submicrometer MOSFETs (2000) (39)
DIMENSION SCALING OF 1/F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS (1997) (39)
Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation (1988) (39)
Analytical unified threshold voltage model of short-channel FinFETs and implementation (2011) (39)
Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors (2011) (38)
Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks (2014) (38)
Analytical modelling for the current-voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs (2010) (38)
Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors (2006) (37)
Impact of few electron phenomena on floating-gate memory reliability (2004) (37)
Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires (2009) (37)
Assessment of interface state density in silicon metal‐oxide‐semiconductor transistors at room, liquid‐nitrogen, and liquid‐helium temperatures (1990) (37)
Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction (2015) (37)
Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors (2013) (36)
Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures (1993) (36)
Quasi-breakdown in ultra-thin SiO/sub 2/ films: occurrence characterization and reliability assessment methodology (2000) (36)
Modelling of ohmic MOSFET operation at very low temperature (1988) (36)
Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism (1986) (35)
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (2008) (35)
Model for programming window degradation in FLOTOX EEPROM cells (1992) (35)
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications (2015) (35)
DC and low frequency noise characterization of FinFET devices (2009) (34)
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides (2001) (33)
Low frequency noise characterization of 0.25 μm Si CMOS transistors (1997) (33)
Monte Carlo study of apparent mobility reduction in nano-MOSFETs (2007) (33)
Mobility analysis of surface roughness scattering in FinFET devices (2011) (33)
A method for MOSFET parameter extraction at very low temperature (1989) (32)
Drain current variability and MOSFET parameters correlations in planar FDSOI technology (2011) (32)
On the charge build-up mechanisms in gate dielectrics (1994) (32)
A study of flicker noise in MOS transistors operated at room and liquid helium temperatures (1990) (32)
Impact of grain number fluctuations in the MOS transistor gate on matching performance (2003) (32)
Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices (2005) (31)
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses (2012) (31)
A physical compact model for direct tunneling from NMOS inversion layers (2001) (30)
A time domain analysis of the charge pumping current (1988) (30)
Flicker noise in metal‐oxide‐semiconductor transistors from liquid helium to room temperature (1989) (30)
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs (2011) (30)
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization (2015) (30)
Precise Extraction of Charge Carrier Mobility for Organic Transistors (2019) (30)
Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET (2009) (30)
Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery (1995) (30)
Physics and performance of nanoscale semiconductor devices at cryogenic temperatures (2017) (30)
Back biasing effects in tri-gate junctionless transistors (2013) (30)
Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies (2011) (30)
Three-dimensional 35 nF/mm/sup 2/ MIM capacitors integrated in BiCMOS technology (2005) (29)
On the origin of the LF noise in Si/Ge MOSFETs (2002) (29)
Compact Modeling of Nanoscale Trapezoidal FinFETs (2014) (29)
Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation (1996) (29)
Reduction of kink effect in short-channel MOS transistors (1990) (29)
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs (2008) (29)
3D nanowire gate-all-around transistors: Specific integration and electrical features (2008) (29)
Low Frequency Noise in Multi-Gate SOI CMOS Devices (2007) (29)
New ratio method for effective channel length and threshold voltage extraction in MOS transistors (2001) (29)
Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs (2005) (28)
Metal evaporation dependent charge injection in organic transistors (2014) (28)
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors (2005) (28)
Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization (2014) (28)
Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors (2010) (28)
Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media (2009) (28)
Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors (2010) (28)
Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures (2001) (27)
Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors (1991) (27)
Electric field and temperature dependence of the stress induced leakage current: Fowler–Nordheim or Schottky emission? (1999) (27)
Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors (2017) (27)
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks (2007) (27)
Impact of LDD structures on the operation of silicon MOSFETs at low temperature (1995) (27)
Modeling of the programming window distribution in multinanocrystals memories (2003) (27)
Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors (2013) (27)
Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance (1986) (27)
Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K (2019) (26)
Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors (2011) (26)
Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs (2015) (26)
Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory (2003) (26)
Low Frequency Fluctuations in Scaled Down Silicon CMOS Devices Status and Trends (1994) (26)
New Y-function based MOSFET parameter extraction method from weak to strong inversion range (2016) (26)
Investigation of the charge pumping current in metal‐oxide‐semiconductor structures (1989) (26)
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors (2014) (26)
Resistive memory variability: A simplified trap-assisted tunneling model (2016) (26)
Temperature dependence of drain-induced barrier lowering in deep submicrometre MOSFETs (1994) (25)
Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control (2014) (25)
Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices (2009) (25)
Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects (2013) (25)
Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs (2011) (25)
The impact of short channel and quantum effects on the MOS transistor mismatch (2003) (25)
Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width (2012) (25)
Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates (2008) (25)
Modeling of static electrical properties in organic field-effect transistors (2011) (24)
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies (2014) (24)
In Situ Comparison of Si/High- $\kappa$ and $\hbox{Si}/ \hbox{SiO}_{2}$ Channel Properties in SOI MOSFETs (2009) (24)
Electron mobility in quasi-ballistic Si MOSFETs (2006) (24)
Joule's law for organic transistors exploration: Case of contact resistance (2013) (24)
Electrical characterization and modeling of MOS structures with an ultra-thin oxide (2002) (24)
Evaluation of variability performance of junctionless and conventional Trigate transistors (2012) (24)
Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET (2010) (24)
Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width (2013) (24)
Low frequency noise characterization and modelling in ultrathin oxide MOSFETs (2006) (24)
Calculation of Surface Charge Noise at the Si-SiO2 Interface (1987) (23)
Modelling of silicon oxidation based on stress relaxation (1987) (23)
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition (1996) (23)
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack (2009) (23)
A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current (2000) (23)
Extraction of low-frequency noise in contact resistance of organic field-effect transistors (2010) (23)
Origin of the low-frequency noise in n-channel FinFETs (2013) (22)
“Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction (2013) (22)
Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process (2010) (22)
In depth characterization of electron transport in 14 nm FD-SOI CMOS devices (2015) (22)
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature (2020) (22)
On the understanding of electron and hole mobility models from room to liquid helium temperatures (1994) (22)
Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films (2007) (22)
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs (2009) (22)
Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge (2009) (22)
Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors (2014) (22)
Modeling of the intrinsic retention characteristics of FLOTOX EEPROM cells under elevated temperature conditions (1995) (22)
Oscillatory behavior of the tunneling current in ultra thin gate dielectrics: Influence of various physical and technological parameters☆ (1997) (22)
Electrical transport characterization of nano CMOS devices with ultra-thin silicon film (2009) (22)
Symmetrical unified compact model of short-channel double-gate MOSFETs (2012) (21)
Effect of Density of States on Mobility in Small-Molecule n-Type Organic Thin-Film Transistors Based on a Perylene Diimide (2012) (21)
Gate-All-Around technology: taking advantage of ballistic transport ? (2009) (21)
Low frequency noise characterization of 0.18μm Si CMOS transistors (1997) (21)
Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks (2007) (21)
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides (2005) (20)
Comparison between matching parameters and fluctuations at the wafer level (2002) (20)
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes (2013) (20)
In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs (2005) (20)
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs (2011) (20)
Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET (2012) (20)
Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress (1997) (20)
Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation (1991) (20)
All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs (2017) (20)
Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies (2006) (20)
Breakdown characteristics of ultra thin gate oxides following field and temperature stresses (1997) (20)
Investigation on trapping and detrapping mechanisms in HfO2 films (2005) (20)
Improved Modeling of Low-Frequency Noise in MOSFETs—Focus on Surface Roughness Effect and Saturation Region (2011) (20)
SiGe channel p-MOSFETs scaling-down (2003) (20)
Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories (1992) (20)
MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 μm CMOS process (2011) (20)
A new extrapolation law for data-retention time-to-failure of nonvolatile memories (1999) (20)
Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors (1998) (20)
Impact of series resistance on the operation of junctionless transistors (2017) (20)
Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology (2015) (19)
Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs (2004) (19)
Low frequency noise characterization of 0.18 μm Si CMOS transistors (1998) (19)
Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs (2007) (19)
Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs (2010) (19)
Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterization (2007) (19)
New extraction method for gate bias dependent series resistance in nanometric double gate transistors (2005) (19)
Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature (1994) (19)
Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors (2011) (19)
Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics (2001) (19)
New parameter extraction method based on split C-V measurements in FDSOI MOSFETs (2013) (19)
New approach for the gate current source–drain partition modeling in advanced MOSFETs (2003) (19)
Experimental Evidence of Mobility Enhancement in Short-Channel Ultra-thin Body Double-Gate MOSFETs (2006) (19)
Method for extracting deep submicrometre MOSFET parameters (1995) (19)
Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method (2014) (19)
Impact of Single Charge Trapping on the Variability of Ultrascaled Planar and Trigate FDSOI MOSFETs: Experiment Versus Simulation (2013) (19)
Low-Frequency Noise in Oxide-Based $(\hbox{TiN}/ \hbox{HfO}_{x}/\hbox{Pt})$ Resistive Random Access Memory Cells (2012) (19)
Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories (2005) (19)
Tunable contact resistance in double-gate organic field-effect transistors (2012) (19)
Comparison for 1/ ${f}$ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET (2017) (18)
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors (2001) (18)
Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise (2013) (18)
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs (2013) (18)
Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature (2014) (18)
ON NOISE SOURCES IN HOT ELECTRON-DEGRADED BIPOLAR JUNCTION TRANSISTORS (1997) (18)
Temperature dependence of gate induced drain leakage current in silicon CMOS devices (1994) (18)
Random Telegraph Signal in the Quasi-Breakdown Current of MOS Capacitors (1996) (18)
Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing (2020) (18)
Reliability extrapolation model for stress-induced-leakage current in thin silicon oxides (1997) (18)
Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions (2015) (18)
Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques [CMOS device applications] (2004) (18)
A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors (2009) (18)
On the impact of OxRAM-based synapses variability on convolutional neural networks performance (2015) (18)
Co-integrated dual strained channels on fully depleted sSDOI CMOSFETs with HfO/sub 2//TiN gate stack down to 15nm gate length (2005) (18)
Stress induced leakage current in ultra-thin gate oxides after constant current stress (1997) (18)
New methodology for drain current local variability characterization using Y function method (2013) (18)
A new model for the current factor mismatch in the MOS transistor (2003) (18)
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network (2015) (17)
Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals (2015) (17)
Peculiar aspects of nanocrystal memory cells: data and extrapolations (2003) (17)
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO 2/TiN gate MOSFETs (2007) (17)
Theoretical analysis of carrier mobility in organic field-effect transistors (2011) (17)
Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films (2000) (17)
Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors (2013) (17)
On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers (1994) (17)
Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors (2011) (17)
Emerging oxide degradation mechanisms: stress induced leakage current (SILC) and quasi-breakdown (QB) (1999) (17)
Investigation of charging/discharging phenomena in nano-crystal memories (2000) (17)
Electric field dependence of TDDB activation energy in ultrathin oxides (1996) (17)
Study of low frequency noise in the 0.18 /spl mu/m silicon CMOS transistors (1999) (17)
A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs (2012) (17)
Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control (2015) (17)
Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis (2013) (17)
New experimental insight into ballisticity of transport in strained bulk MOSFETs (2006) (17)
Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs (2012) (17)
Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling (1998) (17)
How small the contacts could be optimal for nanoscale organic transistors (2013) (16)
A Survey of MOS Device Physics for Low Temperature Electronics (1992) (16)
1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs (2017) (16)
Leakage current conduction in metal gate junctionless nanowire transistors (2017) (16)
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs (2002) (16)
Dependence of Channel Width and Length on MOSFET Matching for 0.18 um CMOS Technology (2000) (16)
Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current (2006) (16)
In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations (2010) (16)
Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures (2012) (16)
New approach for the extraction of gate voltage dependent series resistance and channel length reduction in CMOS transistors (1997) (16)
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs (2012) (16)
Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS (2003) (16)
New method for the extraction of the coupling ratios in FLOTOX EEPROM cells (1993) (16)
UNIFIED MODEL FOR BREAKDOWN IN THIN AND ULTRATHIN GATE OXIDES (12-5 NM) (1999) (16)
Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect (1995) (16)
Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires (2012) (16)
Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology” (2011) (16)
Analysis of the stress-induced leakage current and related trap distribution (1999) (16)
Surface roughness mobility model for silicon MOS transistors (1994) (16)
A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate (2001) (15)
High performance CMOS FDSOI devices activated at low temperature (2016) (15)
Electrical analysis of mechanical stress induced by shallow trench isolation [MOSFETs] (2003) (15)
MOSFET Degradation Studied by Low Frequency Noise, Charge Pumping, and Static I(U) Measurements (1991) (15)
Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65-nm MOSFET Technology and Below (2007) (15)
A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration (2013) (15)
Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism (2016) (15)
Efficiency of mechanical stressors in Planar FDSOI n and p MOSFETs down to 14nm gate length (2012) (15)
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature (2016) (15)
High velocity Si-nanodot : A candidate for SRAM applications at 16nm node and below (2006) (15)
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs (2012) (15)
Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32/spl Aring/) (2001) (15)
Investigating doping effects on high-κ metal gate stack for effective work function engineering (2013) (15)
Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices (2014) (15)
Influence of source-drain series resistance on MOSFET field-effect mobility (1985) (15)
Low temperature electrical characterization of metal‐nitrided oxide‐silicon field effect transistors (1993) (15)
Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress (2011) (15)
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications (2020) (15)
Impact of self-heating effects on the design of SOI devices versus temperature (1995) (14)
Parameter extraction of nano-scale MOSFETs using modified Y function method (2010) (14)
Annealing kinetics and reversibility of stress-induced leakage current in thin oxides (1998) (14)
Tensile strain in arsenic heavily-doped Si (2007) (14)
Less mobility degradation induced by transverse electric-field in junctionless transistors (2014) (14)
Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms (2014) (14)
Densification of thermal SiO2 due to intrinsic oxidation stressing (1984) (14)
Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under Fowler-Nordheim injection (1997) (14)
Electronic transport investigation of arsenic‐implanted silicon. II. Annealing kinetics of defects (1989) (14)
On the high electric field mobility behavior in Si MOSFET's from room to liquid helium temperature (1994) (14)
New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors (2013) (14)
Electrically and radiation induced leakage currents in thin oxides (2000) (14)
Low-frequency noise in SOI pseudo-MOSFET with pressure probes (2011) (14)
Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors (2013) (14)
Electronic transport investigation of arsenic‐implanted silicon. I. Annealing influence on the transport coefficients (1989) (14)
Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature (1996) (14)
Effect of disorder and defects in ion-implanted semiconductors : optical and photothermal characterization (1997) (14)
Analytical modeling of tunneling current through SiO2–HfO2 stacks in metal oxide semiconductor structures (2009) (14)
Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides (2003) (14)
Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors (1996) (14)
Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides (1999) (13)
Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells (2014) (13)
Physics of the frequency response of rectifying organic Schottky diodes (2014) (13)
On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective (2015) (13)
Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies (2013) (13)
Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling (2000) (13)
A New Method for Series Resistance Extraction of Nanometer MOSFETs (2017) (13)
Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics - Implication on matching properties (2006) (13)
Characterization and modeling of nanometric SiO 2 dielectrics (2004) (13)
EKV3 compact modeling of MOS transistors from a 0.18 μm CMOS technology for mixed analog–digital circuit design at low temperature (2009) (13)
Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique (1999) (13)
Impact of channel width on back biasing effect in tri-gate MOSFET (2014) (13)
Threshold voltage and subthreshold slope of the volume-inversion MOS transistor (1991) (13)
Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating (2016) (13)
Experimental investigation and numerical simulation of low‐frequency noise in thin film SOI MOSFETs (1994) (13)
An improved time domain analysis of the charge pumping current (2001) (13)
Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials (2008) (13)
Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT (2019) (13)
Investigation of Drain Current RTS Noise in Small Area Silicon MOS Transistors (1991) (12)
$RC$ Model for Frequency Dependence of Split $C\hbox{--}V$ Measurements on Bare SOI Wafers (2013) (12)
High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator (2015) (12)
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT (2019) (12)
Contact Thickness Effects in Bottom-Contact Coplanar Organic Field-Effect Transistors (2013) (12)
In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs (2006) (12)
Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides (1999) (12)
Impact of TiN post-treatment on metal insulator metal capacitor performances (2006) (12)
A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors (2013) (12)
A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs (2009) (12)
Bardeen's approach for tunneling evaluation in MOS structures (2002) (12)
Charge transport in thin interpoly nitride/oxide stacked films (1999) (12)
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs (2015) (12)
Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides (2000) (12)
Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices (2015) (12)
Accurate Determination of Transport Parameters in Sub‐65 nm MOS Transistors (2013) (12)
Ultra-low power 1T-DRAM in FDSOI technology (2017) (12)
Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories (2011) (12)
Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices (2003) (12)
A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations (2017) (12)
Temperature dependence of substrate current in silicon CMOS devices (1993) (12)
Mobility Characterization in Advanced FD-SOI CMOS Devices (2011) (12)
Drain current variability in 45nm heavily pocket-implanted bulk MOSFET (2010) (12)
Comprehensive analysis of reverse short-channel effect in silicon MOSFETs from low-temperature operation (1998) (12)
Investigation of Cycle-to-Cycle Variability in HfO2-Based OxRAM (2016) (11)
Stacked Nanowires ΦFET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications (2007) (11)
Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs (1997) (11)
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs (2014) (11)
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions (2001) (11)
Reliable Mobility Evaluation of Organic Field-Effect Transistors With Different Contact Metals (2019) (11)
Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel (2019) (11)
Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- $k$ Control Dielectrics (2012) (11)
Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors (2013) (11)
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors (2011) (11)
Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement (2012) (11)
A method for the assessment of oxide charge density and centroid in metal‐oxide‐semiconductor structures after uniform gate stress (1996) (11)
An analytical model for flat-band polysilicon quantization in MOS devices (2002) (11)
Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation (2010) (11)
Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature (1994) (11)
New parameter extraction method based on split C-V for FDSOI MOSFETs (2012) (11)
A new gate pattern measurement for evaluating the BTI degradation in circuit conditions (2014) (11)
Interface state densities, low frequency noise and electron mobility in surface channel In 0.53 Ga 0.47 As n-MOSFETs with a ZrO 2 gate dielectric (2011) (11)
Characterization and modeling of silicon metal‐oxide‐semiconductor transistors at liquid‐helium temperature: Influence of source‐drain series resistances (1990) (11)
Improved method for the oxide thickness extraction in MOS structures with ultra-thin gate dielectrics (1999) (11)
Hot carrier degradation modeling of short-channel n-FinFETs (2015) (11)
Modeling of the impact of source/drain regions on short channel effects in MOSFETs (2013) (11)
New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures (2019) (11)
Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs (2016) (10)
Analytical relationship between subthreshold swing of thermionic and tunnelling currents (2014) (10)
Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique (2016) (10)
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies (2014) (10)
Spacing impact on MOSFET mismatch (2008) (10)
From MOSFET Matching Test Structures to Matching Data Utilization: Not an Ordinary Task (2007) (10)
Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors (2012) (10)
Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment (2015) (10)
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices (2015) (10)
Electrical and Physical Investigation of Defect Annihilation in Arsenic Implanted Silicon (1990) (10)
New Understanding on the Breakdown of High-K Dielectric Stacks using Multi-Vibrational Hydrogen Release Model (2007) (10)
ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME (2013) (10)
Stress induced leakage current at low field in ultra thin oxides (2001) (10)
Numerical and analytical modelling of non ohmic MOSFET operation at liquid helium temperature (1989) (10)
Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks (2014) (10)
Accurate determination of flat band voltage in advanced MOS structure (2007) (10)
A simple derivation of the Kubo-Greenwood formula (1989) (10)
Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit (2015) (10)
New model for the characterization of bulk traps by current deep level transient spectroscopy in metal-oxide-semiconductor transistors (1991) (10)
Self-heating effects in SOI MOSFET's operated at low temperature (1993) (10)
From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (2011) (10)
Automatic full quantum analysis of CV measurements for bulk and SOI devices (2011) (10)
Breakdown characteristics of gate and tunnel oxides versus field and temperature (1993) (10)
Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods (2014) (10)
On the correlation between SILC and hole fluence throughout the oxide (1999) (10)
On the Charge Build-Up Mechanisms in Very Thin Insulator Layers (1994) (10)
Analytical modeling of the transconductance of short channel MOSFETs in the saturation region (1989) (10)
Numerical transient simulation of the programming window degradation in FLOTOX EEPROM cells (1993) (10)
Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals (2000) (10)
Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors (2010) (10)
Impact of trap localization on low-frequency noise in nanoscale device (2014) (10)
Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride (2007) (9)
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm) (2001) (9)
Impact of dynamic variability on the operation of CMOS inverter (2013) (9)
Modeling of contuctance fluctuations in small area metal–oxide–semiconductor transistors (1991) (9)
Influence of drain-induced barrier lowering on the dynamic conductance of short-channel MOSFETs (1986) (9)
Electrical and structural properties of silicon layers heavily damaged by ion implantation (1992) (9)
Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs (2012) (9)
Evidence of mobility edge in degenerate SOS films (1983) (9)
Modifications of Fowler-Nordheim injection characteristics in /spl gamma/ irradiated MOS devices (1997) (9)
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides (1999) (9)
Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides (2002) (9)
Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories (2008) (9)
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling (2010) (9)
Effect of Temperature on the Performance of Triple-Gate Junctionless Transistors (2018) (9)
Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors (2000) (9)
Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics (1997) (9)
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature (2021) (9)
Compact modeling of nano-scale trapezoidal cross-sectional FinFETs (2013) (9)
Analytical modelling of ultra-thin film depletion-mode soi MOSFETs (1991) (9)
Hot carrier impact on the small signal equivalent circuit (2010) (9)
Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs (2011) (9)
Correlation between negative bulk oxide charge and breakdown: modeling, and new criteria for dielectric quality evaluation (1993) (9)
Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing. (2020) (9)
A new physical model for NVM data-retention time-to-failure (1999) (9)
A new hot carrier degradation law for MOSFET lifetime prediction (1998) (9)
Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal–Insulator–Metal Capacitors (2007) (9)
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs (2016) (9)
Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO/sub 2/ and high-k dielectrics) [MOS devices] (2004) (9)
In-depth study of strained SGOI nMOSFETs down to 30nm gate length (2005) (9)
Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices (2015) (9)
Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors (2009) (9)
Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology (2015) (8)
nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines (2014) (8)
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K (2020) (8)
Separation of surface accumulation and bulk neutral channel in junctionless transistors (2014) (8)
Stress induced degradation features of very thin gate oxides (1998) (8)
Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique (1992) (8)
28nm FDSOI CMOS technology (FEOL and BEOL) thermal stability for 3D Sequential Integration: yield and reliability analysis (2020) (8)
Comparative simulation of TriGate and FinFET on SOI: Evaluating a multiple threshold voltage strategy on triple gate devices (2013) (8)
Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration (2015) (8)
Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide (2015) (8)
Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs (2015) (8)
Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances (2013) (8)
Thorough characterization of deep-submicron surface and buried channel pMOSFETs (2002) (8)
Comments, with reply, on 'Random telegraph noise of deep-submicrometer MOSFETs' by K.K. Hung et al (1990) (8)
New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration (2018) (8)
New Extensive MVHR Breakdown Models (2006) (8)
Stress induced leakage current dependence on oxide thickness, technology and stress level (1997) (8)
Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator (2018) (8)
Improved methodology for better accuracy on transistors matching characterization (2006) (8)
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics (2001) (8)
Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming (2010) (8)
Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks (2009) (8)
MODELING AND SIMULATION OF COUPLING EFFECT ON LOW FREQUENCY NOISE IN ADVANCED SOI MOSFETS (2008) (8)
Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation (2019) (8)
MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown [MOS devices] (2005) (8)
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs (2012) (8)
Performance and Reliability of a Fully Integrated 3D Sequential Technology (2018) (8)
Comparative study of circuit perspectives for multi-gate structures at sub-10nm node (2011) (8)
Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides (2001) (8)
Conductivity near a mobility edge in 2D electronic systems (1984) (8)
Investigation of Dynamic Memory Effects in Si-dot Devices (2000) (8)
Defects-induced gap states in hydrogenated γ-alumina used as blocking layer for non-volatile memories (2011) (8)
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs (2013) (8)
Origins of the short channel effects increase in III-V nMOSFET technologies (2012) (8)
Analytical expressions for subthreshold swing in FDSOI MOS structures (2018) (8)
Revisited approach for the characterization of Gate Induced Drain Leakage (2011) (8)
Electronic transport investigations on silicon damaged by arsenic ion implantation (1986) (8)
On the SILC mechanism in MOSFET's with ultrathin oxides (2005) (8)
High field transport characterization in nano MOSFETs using 10GHz capacitance measurements (2013) (8)
Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure (2008) (8)
Modified space-charge limited conduction in tantalum pentoxide MIM capacitors (2007) (8)
Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs (2017) (8)
Study of stress induced leakage current by using high resolution measurements (1999) (8)
Oxide thickness extraction methods in the nanometer range for statistical measurements (2002) (8)
Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14nm NMOS devices (2015) (8)
A simple model of the drain saturation voltage dependence with gate voltage for short‐channel MOSFETs (1987) (7)
Characterization and modeling of NBTI permanent and recoverable components variability (2016) (7)
Low frequency noise in advanced Si bulk and SOI MOSFETs (2005) (7)
Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors (2011) (7)
Model for the oxide thickness dependence of SILC generation based on anode hole injection process (1999) (7)
Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization (1997) (7)
MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools (2014) (7)
Investigation of charge-trap memories with AlN based band engineered storage layers (2010) (7)
Characterization and modelling issues in MOS structures with ultra thin oxides (2004) (7)
Method for extraction of η parameter characterising μ eff against E eff curves in FD-SOI Si MOS devices (2009) (7)
Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack (2017) (7)
Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices (2009) (7)
ONO and NO interpoly dielectric conduction mechanisms (1999) (7)
Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implants (2011) (7)
MOSFET parameter extraction from static, dynamic and transient current measurements (1994) (7)
Sheet resistance measurement on AlGaN/GaN wafers and dispersion study (2013) (7)
Scaling down and low‐frequency noise in MOSFET’s. Are the RTS’s the ultimate components of the 1/f noise? (2008) (7)
Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT (2020) (7)
Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures (2021) (7)
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion (2017) (7)
New insight on the frequency dependence of TDDB in high-k/metal gate stacks (2013) (7)
On the threshold voltage shift after hot carrier injection in deep submicron n-channel MOSFETs: a quasi-uniform approach (1995) (7)
Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators (2016) (7)
Magnetoresistance technique for mobility extraction in short channel FDSOI transistors (2005) (7)
Low Frequency Noise Analysis in Advanced CMOS Devices (2011) (7)
An Analytical Model of Conductance and Transconductance for Depletion‐Mode MOS Transistors (1987) (7)
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs (2020) (7)
Impact of short-channel effects on velocity overshoot in MOSFET (2015) (7)
Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport (2000) (7)
New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling (2017) (7)
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides (2007) (7)
New physical model for ultra-scaled 3D nitride-trapping non-volatile memories (2008) (7)
High Threshold Voltage Matching Performance on Gate-All-Around MOSFET (2006) (7)
Doping profile extraction in thin SOI films: Application to A2RAM (2018) (7)
Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling (1999) (7)
Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET (2020) (7)
Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors (2019) (7)
Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application (2020) (7)
CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT (2006) (7)
Reliability issues related to Fast Charge Loss Mechanism in Embedded Non Volatile Memories (2006) (7)
A New Method for the Extraction of MOSFET Parameters at Ambient and Liquid Helium Temperatures (1988) (7)
An In-Depth Investigation of Physical Mechanisms Governing SANOS Memories Characteristics (2009) (7)
Assessment of technological device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs (2014) (7)
Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors (2010) (7)
Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs (2014) (7)
New method for assessment of depletion charge dependence of mobility in short-channel silicon MOS transistors (1991) (7)
Modeling of program, erase and retention characteristics of charge-trap gate all around memories (2011) (6)
Temperature, field and technological dependences of thin oxide breakdown characteristics (1993) (6)
Simulation methodology for 2D random network of CNTs field-effect transistors (2013) (6)
Modeling study of the SiGe/Si heterostructure in FDSOI pMOSFETs (2012) (6)
Generalised method for extraction of MOSFET source-drain series resistance against temperature (1993) (6)
Strain-enhanced performance of Si-Nanowire FETs (2013) (6)
Electrostatics and channel coupling on 28 nm FD-SOIfor cryogenic applications (2020) (6)
Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices (2014) (6)
New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices (2004) (6)
Contributions and limits of charge pumping measurement for addressing trap generation in high-k/SiO2 dielectric stacks (2008) (6)
Low Frequency Noise in Si-based MOS Devices (2005) (6)
Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation (2020) (6)
Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs (2015) (6)
Impact of Wet Treatments on the Electrical Performance of Ge0.9Sn0.1-Based p-MOS Capacitors (2019) (6)
New method for the parameter extraction in Si MOSFETs after hot carrier injection (1997) (6)
Memory characteristics of Si quantum dot devices with SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunneling dielectrics (2001) (6)
Physically-based extraction methodology for accurate MOSFET degradation assessment (2015) (6)
A comparative mismatch study of the 20 nm Gate-Last and 28 nm Gate-First bulk CMOS technologies (2015) (6)
Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design (2011) (6)
Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution (2009) (6)
Wet or dry ultrathin oxides: impact on gate oxide and device reliability (2000) (6)
Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides During Fowler-Nordheim Injection (1996) (6)
Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs (2016) (6)
Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs (2008) (6)
Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology (2009) (6)
Impact of TiN Plasma Post-Treatment on Alumina Electron Trapping (2006) (6)
Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives (2016) (6)
CMOS roadmap analysis from the perspective of III-V technology using MASTAR (2015) (6)
Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs (2017) (6)
Characterization and modeling of low frequency noise in CMOS inverters (2013) (6)
ANALYSIS OF SPATIAL AND ENERGY SLOW TRAP PROFILE IN HfO2/SiO2 METAL-OXIDE-SILICON DEVICES BY LOW FREQUENCY NOISE MEASUREMENTS (2008) (6)
Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current (2006) (6)
MOSFET Compact Modeling Issues for Low Temperature (77 K – 200 K) Operation (2008) (6)
Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution (2015) (6)
Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories (2005) (6)
In-depth electrical characterization of sub-45 nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack (2008) (6)
Has SiGe lowered the noise in transistors (2002) (6)
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs (2017) (6)
Channel width dependent subthreshold operation of tri-gate junctionless transistors (2020) (6)
Charge trapping in SiO2/HfO2/TiN gate stack (2003) (6)
Static measurements and parameter extraction (1996) (6)
Electric field and temperature acceleration of quasi-breakdown phenomena in ultrathin oxides (1998) (6)
Planar Bulk+ technology using TiN/Hf-based gate stack for low power applications (2008) (6)
Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs (2013) (6)
Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs (2010) (6)
Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications (2020) (6)
Impact of carrier heating on backscattering in inversion layers (2011) (5)
Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs (2020) (5)
Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of non thermal carrier distributions (2008) (5)
Hot carrier stress: Aging modeling and analysis of defect location (2016) (5)
Lateral dependence of dopant-number threshold voltage fluctuations in MOSFETs (1999) (5)
Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements (2018) (5)
A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements (1998) (5)
Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy (2018) (5)
Unexpected impact of germanium content in SiGe bulk PMOSFETs (2013) (5)
Data Retention Time-to-Failure of Non Volatile Memories (1998) (5)
Intrinsic Mechanism of Mobility Collapse in Short MOSFETs (2021) (5)
The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs (2008) (5)
Noise-induced dynamic variability in nano-scale CMOS SRAM cells (2016) (5)
Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers (2012) (5)
Characterization and modeling of capacitances in FD-SOI devices (2011) (5)
Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors (2019) (5)
Modeling and optimization of series resistance of planar MIM capacitors (2006) (5)
On the degradation features of poly-emitter n-p-n BJTs after hot carrier injection (1995) (5)
Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions (2014) (5)
Variability analysis - prediction method for nanoscale triple gate FinFETs (2013) (5)
Behavior of subthreshold conduction in junctionless transistors (2016) (5)
RF Performance of a Fully Integrated 3D Sequential Technology (2019) (5)
Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices (2013) (5)
Extensive study of Bias Temperature Instability in nanowire transistors (2015) (5)
Body effect induced wear-out acceleration in ultra-thin oxides (2001) (5)
Reliability issues of silicon-dioxide structures—Application to FLOTOX EEPROM cells (1993) (5)
Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET) (2009) (5)
Modeling of Single and Double Gate Thin Film SOI MOSFETs (1989) (5)
Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate Oxide (2004) (5)
Gate dielectrics for ultimate CMOS technologies – Limitations and alternative solutions (2000) (5)
Inter-tier Dynamic Coupling and RF Crosstalk in 3D Sequential Integration (2019) (5)
Static and low frequency noise characterization of densely packed CNT-TFTs (2012) (5)
All-operation-regime characterization and modeling of drain current variability in junctionless and inversion-mode FDSOI transistors (2020) (5)
Study on C60 Doped PMMA for Organic Memory Devices (2010) (5)
Temperature dependence of the leakage current in oxide-nitride-oxide interpoly dielectrics (1995) (5)
Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation (2018) (5)
BSIM4.1 DC parameter extraction on 50 nm n-pMOSFETs (2002) (5)
Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI (2017) (5)
Low-frequency noise behavior of n-channel UTBB FD-SOI MOSFETs (2013) (5)
Magnetoresistance mobility extraction in the saturation regime of short channel MOS devices (2012) (5)
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations (2013) (5)
High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration (2017) (5)
Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements (2016) (5)
Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model (2020) (5)
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime (2014) (5)
Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications (2021) (5)
Study of low-frequency noise in SOI tri-gate silicon nanowire MOSFETs (2013) (5)
Impact of scaling on electrostatics of Germanium-channel MOSFET — analytical study (2008) (5)
Folded fully depleted Bulk+ technology as a highly W-scaled planar solution (2008) (5)
SiO2- and ONO-induced substrate current in silicon field-effect transistors (1998) (5)
Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs (2006) (5)
Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology (2013) (5)
From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (2009) (4)
New Method for the Extraction of the Gate Voltage Dependence of the Series Resistance in CMOS Transistors (1996) (4)
Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism (1999) (4)
Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs (2008) (4)
Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices (2014) (4)
Impact of reactive ion etching using O/sub 2/+CHF/sub 3/ plasma on the endurance performance of FLOTOX EEPROM cells (1993) (4)
Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors (2020) (4)
Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs (2012) (4)
Low frequency 1/f noise characterization of advanced CMOS-compatible bipolar junction transistors for technology evaluation (1997) (4)
On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories (2008) (4)
Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs (2008) (4)
Analysis of the Hall effect in the localised states below the mobility edge (1987) (4)
An advanced RF-CV method as a powerful characterization tool for the description of HC induced defect generation at microscopic level (2011) (4)
Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric (2019) (4)
Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS Structures (1994) (4)
Mismatch trends in 20nm gate-last bulk CMOS technology (2014) (4)
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet) (2018) (4)
First CMOS integration of ultra thin body and BOX (UTB2) structures on bulk direct silicon bonded (DSB) wafer with multi-surface orientations (2009) (4)
Experimental analysis of surface roughness scattering in FinFET devices (2010) (4)
Comparison between recoverable and permanent NBTI variability components (2015) (4)
A new method for the experimental determination of the control gate and drain coupling ratios in FLOTOX EEPROM cells (1993) (4)
Thermal effects in 3D sequential technology (2017) (4)
Electrical characterization of percolating silicon nanonet FETs for sensing applications (2017) (4)
Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors (2013) (4)
Low frequency noise and random telegraph signals in 0.35 mm silicon CMOS devices (1993) (4)
Integration Density Limitation in 3D Integrated Circuits due to Heat Dissipation (1986) (4)
1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric (2019) (4)
Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology (2013) (4)
Characterization of the Gate SiO2 /Channel-Si Interface in Thin-gate SiO2 MOSFETs by Low Frequency Noise and Charge Pumping Techniques (2001) (4)
Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology (2016) (4)
New Lifetime Prediction Method Based on the Control of the Secondary Impact Ionization with the Substrate Bias (1998) (4)
Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs (2020) (4)
Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retentiona) (2008) (4)
Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's (1997) (4)
Parameters extraction in SiGe/Si pMOSFETs using split CV technique (2013) (4)
Flicker noise in MOS transistors operated at room and liquid helium temperatures (1990) (4)
Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity (2015) (4)
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset (2009) (4)
Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices (2014) (4)
Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress (2006) (4)
Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport (2006) (4)
Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology (2015) (4)
Respective contributions of the fast and slow traps to charge pumping measurements (1995) (4)
Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability (2018) (4)
Temperature dependence of transport and trapping properties of oxide-nitride-oxide dielectric films (1997) (4)
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices (2010) (4)
15nm-diameter 3D Stacked Nanowires with optional Independent Gates operation (?FET) (2008) (4)
Breakdown mechanisms in ultra-thin Oxides: impact of carrier energy and current through substrate hot carrier stress study (2004) (4)
Intrinsic limitation of transconductance in extremely short silicon MOS transistors (1988) (4)
Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories (2007) (4)
Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures (2002) (4)
Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features (2006) (4)
A three-piece model of channel length modulation in submicrometer MOSFETs (1988) (4)
Low temperature high voltage analog devices in a 3D sequential integration (2020) (4)
Magnetoresistance mobility measurements in sub 0.1 /spl mu/m Si MOSFETs (2004) (4)
Sensitivity analysis of C-V global variability for 28 nm FD-SOI (2017) (4)
Device Physics and Electrical Performance of Bulk Silicon Mosfets (2001) (4)
Analysis and Modeling of Low Frequency Noise in Extremely Deep Submicron Silicon CMOS Devices (1993) (3)
Extraction of oxide thickness in the nanometer range using C(V) characteristics (2001) (3)
Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories (2012) (3)
Validation of The Charge Pumping Method down to Liquid Helium Temperature (1991) (3)
Influence of rapid thermal nitridation process in N/sub 2/O ambient on the endurance performance of FLOTOX EEPROM cells (1993) (3)
Impact of BOX/substrate interface on low frequency noise in FD-SOI devices (2007) (3)
Impact of progressive oxide soft breakdown on metal oxide semiconductor parameters: Experiment and modeling (2009) (3)
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride (2008) (3)
Low-Frequency Noise in SOI MOSFETs from Room to Liquid Helium Temperature: Experimental and Numerical Simulation Results (1993) (3)
Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress (1996) (3)
Innovative tunnel FET architectures (2018) (3)
Impact of source to drain tunneling on the Ion/Ioff trade-off of alternative channel material MOSFETs (2007) (3)
Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology (2017) (3)
Temperature dependence of TDDB at high frequency in 28FDSOI (2019) (3)
Extraction of η parameter characterising μ eff against E eff curves in strained Si nMOS devices (2008) (3)
Statistical analysis of CBRAM endurance (2018) (3)
A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization (2017) (3)
Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology (2012) (3)
Characterization of SILO in thin-oxides by using MOSFET substrate current (1998) (3)
Hybrid Localized SOI/bulk technology for low power system-on-chip (2010) (3)
Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications (2010) (3)
On the role of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories (2008) (3)
Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method (2020) (3)
New access resistance extraction methodology for 14nm FD-SOI technology (2016) (3)
Intrinsic cut off frequency of Si and GaAs based Resonant Tunneling Diodes (2009) (3)
Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs (2018) (3)
In depth characterization of hole transport in 14nm FD-SOI pMOS devices (2014) (3)
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI (2014) (3)
Low‐frequency noise and random telegraph signals in 0.35 μm silicon CMOS devices (2008) (3)
Investigation of mechanisms shifting metal effective workfunction towards P+ for various Al incorporation scenarii (2010) (3)
Controlling the Effective Channel Thickness of Junctionless Transistors by Substrate Bias (2020) (3)
Investigation of HfO2/Ti based vertical RRAM - Performances and variability (2014) (3)
Low-frequency noise in bare SOI wafers: Experiments and model (2015) (3)
Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques (1999) (3)
Low Frequency Noise in the Base Current of Polysilicon Emitter BJT's after Hot-Carrier Stress (1994) (3)
Reliability review of 250 GHz fully self aligned heterojunction bipolar transistors for millimeterwave applications (2009) (3)
Impact of constant current stressing procedure on Stress Induced Leakage current generation in thin oxides (1998) (3)
On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes (2018) (3)
Experimental investigation of transport mechanisms through HfO2 gate stacks in nMOS transistors (2009) (3)
Investigation of electron and hole mobilities in MOSFETs with TiN/HfO/sub 2//SiO/sub 2/ gate stack (2003) (3)
Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes (2008) (3)
CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K (2006) (3)
Analytical Modelling of the Kink Effect in MOS Transistors (1989) (3)
IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S (2006) (3)
Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors (2000) (3)
Quantum effects influence on thin silicon film capacitor-less DRAM performance (2006) (3)
Drain and Gate Current LF Noise in Advanced CMOS devices with Ultrathin gate Oxides (2005) (3)
A Self-contained Defect-aware Module for Realistic Simulations of LFN, RTN and Time-dependent Variability in FD-SOI Devices and Circuits (2018) (3)
Analytical modelling of the programmed window in flotox EEPROM cells (1993) (3)
Study of Ferrocene/Silicon hybrid memories: Influence of the chemical linkers and device thermal stability (2008) (3)
Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance (2020) (3)
Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology (2020) (3)
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT (2019) (3)
Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors (2015) (3)
Physical origin of Vt instabilities in high-k dielectrics and process optimisation (2005) (3)
Electrical characterization of FDSOI CMOS devices (2016) (3)
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation (2010) (3)
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology (2017) (3)
Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET (2019) (3)
Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport (2018) (3)
Series resistance in different operation regime of junctionless transistors (2017) (3)
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices (2003) (3)
Influence of hot-electron-induced aging on the dynamic conductance of short-channel MOSFETs (1987) (3)
Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs (2016) (3)
Unified Compact Model of Soft Breakdown Oxide Degradation and Its Impact on CMOS Circuits Reliability (2012) (3)
Robust EOT and effective work function extraction for 14 nm node FDSOI technology (2016) (3)
A new degradation mode for heterojunction bipolar transistors under reverse-bias stress (2006) (3)
Integration of OTS based back-end selector with HfO2 OxRAM for crossbar arrays (2019) (3)
New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications (2008) (3)
Low-Frequency Noise Sources in Polysilicon Emiter Bipolar Transistors: Influence of Hot-Electron-Induced Degradation and Post-Stress Recovery (1993) (3)
Low frequency noise in phase change materials (2011) (3)
On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process (2013) (3)
Abnormally High Current Local Fluctuations in Heavily Pocket-implanted Bulk Long MOSFET (2008) (3)
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature (2021) (2)
Electrical Activation of Heavily Doped Arsenic Implanted Silicon (1988) (2)
Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Double Gate Structures (2011) (2)
Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors (2008) (2)
Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs (2017) (2)
Quasi Ballistic Transport in Advanced MOSFET Devices (2007) (2)
MOBILITY EXTRACTION IN UNIAXIALLY AND BIAXIALLY STRAINED N-MOSFETs (2009) (2)
Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10 nm node (2014) (2)
Low-temperature performance of ultimate Si-based MOSFETs (2003) (2)
A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET (1990) (2)
Test structures for interdie variations monitoring in presence of statistical random variability (2012) (2)
Modelling of the programming window distribution in multi nanocrystals memories (2003) (2)
Transport Properties of the SiO(2)/Ta(2)O(5) stack as Gate Dielectric in CMOS Processes (1998) (2)
Oxide Soft BreakDown : From device modeling to small circuit simulation (2009) (2)
Influence of tunnel oxide thickness variation on the programmed window of FLOTOX EEPROM cells (1992) (2)
Direct tunnelling models for circuit simulation (2001) (2)
Programming Window Degradation in Flotox Eeprom Cells (1991) (2)
On the diffusion current in a MOSFET operated down to deep cryogenic temperatures (2021) (2)
Linewidth influence on electromigration tests at wafer level on TiN/AlCu/TiN/Ti metal lines (1995) (2)
Hot-Carrier Effects in Single- and Double-Gate Thin-Film SOI MOSFETs (1995) (2)
Analysis of two‐step thermal oxidation of silicon (1987) (2)
Reliability simulations of the endurance performance of FLOTOX EEPROM cells using spice (1993) (2)
Static and low frequency noise characterization of FinFET devices (2009) (2)
Modelling of electron mobility in silicon MOS inversion and accumulation layers at liquid helium temperature (1990) (2)
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05) (2005) (2)
Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials (2008) (2)
On the endurance performance of FLOTOX EEPROM cells with WSi2 overcoated floating gate electrode (1993) (2)
Sensitive differential method for the extraction of the mobility variation in uniformly degraded MOS transistors (1993) (2)
Improved analysis of NBTI relaxation behavior based on fast I–V measurement (2016) (2)
Impact of low thermal processes on reliability of high-k/metal gate stacks (2017) (2)
On the degradation kinetics of thin oxide layers (1999) (2)
Localized SOI logic and bulk I/O devices co-integration for Low power System-on-Chip technology (2010) (2)
New Characterization Methodology of Borderless Silicon Nitride Charge Kinetics Using C-V Hysteresis Loops (2008) (2)
Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability (2014) (2)
Electron and Hole Mobility in Semiconductor Devices (2014) (2)
Recent Findings in Electrical Behavior of CMOS High-K Dielectric/Metal Gate Stacks (2011) (2)
A Comparative Study of Minimal Supply Voltage of 6T-SRAM at the 16nm node using MASTAR into a Conventional CAD Environment (2012) (2)
Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials (2008) (2)
Accurate and Ready-to-use Parasitic Capacitances Models for Advanced 2D/3D CMOS Device Structure Comparison (2011) (2)
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT (2021) (2)
Finite element simulation of 2D percolating silicon-nanonet field-effect transistor (2018) (2)
Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature (1994) (2)
A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency (2020) (2)
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges (2018) (2)
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices (2017) (2)
Reverse short channel effect in silicon MOSFETs operated at low temperature (1998) (2)
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0K – Towards compact modeling for cryo CMOS application (2021) (2)
Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs (2017) (2)
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function (2021) (2)
Low frequency noise statistical characterization of 14nm FDSOI technology node (2015) (2)
Origin of hot carrier degradation in advanced nMOSFET devices (2002) (2)
Limiting oxide failure mode versus oxide thickness. Some insights for deep-submicron technologies (1999) (2)
3D Stacked Nanowires CMOS Integration with a Damascene Finfet Process (2007) (2)
Analytical model for quantum well to quantum dot tunneling (2003) (2)
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances (2013) (2)
Impact of emitter resistance mismatch on base and collector current matching in bipolar transistors (2006) (2)
Physical Understanding of the Hooge Parameter in ZnO Nanowire Devices. (2008) (2)
UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM (2014) (2)
A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substrates (1998) (2)
Static characterization of n MOS inverters between liquid helium and room temperatures (1993) (2)
New Insight on the Origin of Stress Induced Leakage Current for SIO2/HFO2 Dielectric Stacks (2006) (2)
HfO2-based gate stacks transport mechanisms and parameter extraction (2010) (2)
Subthreshold behavior of dual-bit nonvolatile memories with very small regions of trapped charge (2006) (2)
Semi-analytical modelling of short channel effects in Si double gate, tri-gate and gate all-around MOSFETs (2008) (2)
Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration (2019) (2)
A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs (2020) (2)
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment (2015) (2)
Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction (2018) (2)
Study of the interface area effect on the density of states in PTAA-Cytop® OTFTs (2012) (2)
Impact of strain on access resistance in planar and nanowire CMOS devices (2017) (2)
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology (2017) (2)
Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials (2015) (2)
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR (2015) (2)
Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI (2013) (2)
Improved low frequency noise model for MOSFET operated in non-linear region (2011) (2)
In depth analysis of dopant effect on high-k metal gate effective work function (2012) (2)
Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors (2021) (2)
Quasi-static capacitance measurements in pseudo-MOSFET configuration for Dit extraction in SOI wafers (2015) (2)
Analytical model for subband engineering in undoped double gate MOSFETs (2005) (2)
Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers (2007) (2)
Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs (2020) (2)
Effective Work Function Shift Induced by TiN Sacrificial Metal Gates as a Function of Their Thickness and Composition in 14nm NMOS devices (2014) (2)
Impact of silicon nitride CESL on NLDEMOS transistor reliability (2008) (2)
On the occurrence of few-electrons phenomena in ultra-scaled silicon nano-crystals memories (2003) (2)
Investigations on possible occurrence of ballistic transport in different NMOS architectures (2004) (2)
Reliable extraction of metal gate work function by combining two electrical characterization methods (2007) (2)
Impact of Oxide Progressive Soft Breakdown: Experiment and Modeling. (2008) (2)
Gate-Last Integration on planar FDSOI for low-VTp and low-EOT MOSFETs (2013) (2)
Self-heating assessment and cold current extraction in FDSOI MOSFETs (2017) (2)
A new degradation mode for advanced heterojunction bipolar transistors under reverse bias stress (2005) (2)
Characterization of Interface Defects (2010) (1)
New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology (2015) (1)
(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces (2020) (1)
Impact of quantum-mechanical effects on the double-gate MOSFET characteristics (2003) (1)
Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices (2015) (1)
Model and Fitting Results for the Filamentary Conduction in MIM Resistive Switching Devices (2011) (1)
Pockets engineering impact on mismatch performance on 45nm MOSFET technologies (2009) (1)
Compact model for quasi ballistic transport and quantization in strained and unstrained bulk MOSFETs (2005) (1)
MOS Transistor Matching at Low Temperature for Analog Circuit Design (2010) (1)
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes (2013) (1)
A2RAM compact modeling: From DC to 1T-DRAM memory operation (2020) (1)
Improved method for the extraction of oxide charge density and centroid from the current-voltage characteristic shifts in a MOS structure after uniform gate stress (1997) (1)
Electrical characterization of advanced FDSOI CMOS devices (2019) (1)
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface (2021) (1)
Insight on physics of Hf-based dielectrics reliability (2005) (1)
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices (2012) (1)
Comparison of carrier velocity gain in uniaxially and biaxially strained N-MOSFETs (2007) (1)
Low-temperature characterization of hall and effective mobility in junctionless transistors (2014) (1)
Study of low frequency noise in scaled down silicon CMOS transistors (1998) (1)
Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories (2010) (1)
Low‐frequency noise sources in polysilicon emitter bipolar transistors: Influence of hot‐electron‐induced degradation (2008) (1)
Charge Carrier Mobility: Precise Extraction of Charge Carrier Mobility for Organic Transistors (Adv. Funct. Mater. 20/2020) (2020) (1)
Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K (2020) (1)
Static and low-frequency noise characterization of ultrathin SOI with very thin BOX in pseudo-MOSFET configuration (2011) (1)
Low frequency noise in silicon on insulator MOSFET's: experimental and numerical simulation results (1993) (1)
Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire (2014) (1)
On the cumulative distribution function of the defect centric model for BTI reliability (2019) (1)
On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories (2008) (1)
How to monitor Metal-Insulator-Metal (MIM) capacitors dielectric reliability (2008) (1)
Static and noise characterization of deep submicron CMOS devices (1995) (1)
Electrical Characterization of Ultra-Thin Silicon-On-Insulator Substrates: Static and Split C-V Measurements in the Pseudo-MOSFET Configuration (2013) (1)
DC Characterization of Different Advanced MOSFET Architectures (2011) (1)
Failures in ultrathin oxides: Stored energy or carrier energy driven? (2001) (1)
New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes (2018) (1)
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs (2021) (1)
Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT (2017) (1)
Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots. (2008) (1)
Low Frequency Noise and Fluctuations in Sub 0.1um Bulk and SOI CMOS Technologies (2006) (1)
Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices (2009) (1)
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime (2007) (1)
Electrical Performances at low temperature of ultimate Si-based MOSFETs (2003) (1)
Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon (2006) (1)
Study of forward AC stress degradation of GaN-on-Si Schottky diodes (2018) (1)
High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films (2007) (1)
Analog-Digital Circuit Design at Low Temperature. (2008) (1)
Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application (2010) (1)
Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications (2008) (1)
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown (2005) (1)
Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers (1989) (1)
PROGRAMABLE SYSTEM FOR LOW FREQUENCY NOISE MEASUREMENTS IN MICROELECTRONICS DEVICES CONTACTED BY POINT PROBES (2003) (1)
Conjugated Polymers: Exploring the Charge Transport in Conjugated Polymers (Adv. Mater. 41/2017) (2017) (1)
Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs (2015) (1)
Impact of Silicon Film Thickness on LF Noise in SOI Devices (2006) (1)
Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node (2013) (1)
Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing (2021) (1)
Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides (2006) (1)
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements (2015) (1)
Series Resistance Effects on the Back-gate Biased Operation of Junctionless Transistors (2019) (1)
Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT (2021) (1)
Towards 500°C SPER activated devices for 3D sequential integration (2017) (1)
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs (2003) (1)
High Mobility Nano-Scaled CMOS: Some Opportunities and Challenges (2006) (1)
A New Charge Pumping Method for Studying the Si-SiO2 Interface (1996) (1)
LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING (2004) (1)
Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs. (2010) (1)
Vertical transport in spin coated ultra thin polycrystalline pentacene organic stacks (2009) (1)
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes (2009) (1)
New Concept of Differential Effective Mobility in MOS Transistors (2019) (1)
Lambert W-function based modelling of P-OTFTs and application to low temperature measurements (2018) (1)
Detailed analysis of frequency-dependent impedance in pseudo-MOSFET on thin SOI film (2018) (1)
Nano Crystal Memory Devices Characterization Using the Charge Pumping Technique (2002) (1)
Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs (2011) (1)
Electrical Characterization of Memory-Cell Structures Employing Ultra-Thin Al2O3 Film as Storage Node (2001) (1)
Quasi-breakdown in ultra-thin oxides: some insights on the physical mechanisms (2000) (1)
Influence of ballistic and pocket effects on electron mobility in Si MOSFETs (2005) (1)
Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs (2018) (1)
Modelling and simulation of single and double gate thin film SOI MOSFETs (1989) (1)
Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage (2019) (1)
Comparison between <100> and <110> oriented channels in highly strained FDSOI nMOSFETs (2012) (1)
Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology (2015) (1)
NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications (2008) (1)
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments (2022) (1)
Thermopower of a quasi‐two‐dimensional electron gas (1982) (1)
Gate and Substrate Currents in Deep Submicron MOSFETs (1996) (1)
Analytical modeling of parasitics in monolithically integrated 3D inverters (2012) (1)
Low-Temperature Electrical Characterization of eXtra-strained FD-SOI n-MOSFETs with TiN/HfO2 gate stack for the 32nm Technology Node. (2008) (1)
Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures (2008) (1)
Understanding the Carbon Impact on Si/SiGe:C HBT Base Current Mismatch (2007) (1)
Superiority of Core-Shell Junctionless FETs (2022) (1)
Impact of Bandstructure Effects in III-V nMOSFETs (2015) (1)
Radiation-induced changes in floating-body phenomena in SOI MOSFET's (1991) (1)
Reliability Properties of Rapid Thermal Processed Nitrided Oxides after Fowler-Nordheim Electrical Stress (1992) (1)
New Drain Current Transient Technique for Measuring the Slow Oxide Trap Density in MOS Transistors (1995) (1)
Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate (2018) (1)
WITHDRAWN: Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction (2017) (1)
Modeling of thin film depletion-mode SOI MOSFETs (1990) (1)
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs (2021) (1)
Aging and noise in the Si bipolar junction transistor (2008) (1)
Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance (2014) (1)
Low Frequency Noise Analysis in HfO2/SiO2 gate oxide Fully-Depelted SOI Transistors. (2008) (1)
A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors (2018) (1)
Physical Properties of Silicon CMOS Devices Operated between Liquid Helium and Room Temperature (1993) (1)
High-temperature behaviour of heavily doped SOS films (1987) (1)
Transport characterisation of Ge pMOSFETS in saturation regime (2011) (1)
Radiation-induced changes in floating-body phenomena in SOI MOSFETs (1991) (1)
Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs (2020) (1)
Breaking the Subthreshold Slope Limit in MOSFETs (2022) (1)
New parameter extraction method for the simulation of the space charge created by Fowler-Nordheim electron injections in the gate oxide of MOS devices (1997) (1)
Noise Analysis of MOSFET's with Ultra Thin Silicon Oxinitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition (LPRTCVD) (1995) (1)
Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K (2020) (1)
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses (2011) (1)
Nanodevices Tend to Be Round (2021) (1)
Performance and Reliability of Si-Nanocrystal Double Layer Memory Devices with High-k Control Dielectrics (2009) (1)
Influence of series resistance on the experimental extraction of FinFET noise parameters (2020) (1)
Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps (2003) (1)
Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors (2019) (1)
Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Ta2O5 MIM Capacitors (2008) (1)
Study of Organic Material FETs by Combined Static and Noise Measurements (2009) (1)
Improved methodology for the Characterization of Avt MOSFET matching parameter dispersion (2006) (1)
Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements (1999) (1)
Downloaded on 2020-01-31T18:37:59Z Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors (2020) (0)
Compact Modeling of Organic and IGZO TFTs from 150 to 350K (2021) (0)
Trapping and detrapping kinetics in metal gate/HfO/sub 2/ stacks (2005) (0)
In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling (2020) (0)
Comparison of RTN and TDDS methods for trap extraction in trigate nanowires (2017) (0)
Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling. (2008) (0)
Low‐Frequency Noise in a 0.18 μm Mixed‐Mode CMOS Technology at Low Temperature (2009) (0)
AN EXTENDED "Y FUNCTION" METHOD FOR SATURATION REGIME CHARACTERIZATION: APPLICATION TO BULK Si AND Ge TECHNOLOGIES (2012) (0)
Vertically Stacked Lateral Si 80 Ge 20 Nanowires Transistors for 5 nm CMOS Applications (0)
On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures (2022) (0)
Effective mobility in extra-thin film and ultra-thin BOX SOI wafers. (2013) (0)
New characterization methods for nanoMOSFETs. (2008) (0)
A review of the pseudo-MOSFET and recent developments (2014) (0)
Electrical characterization versus temperature of SI MOS transistors with plasma nitrided gate oxide (1993) (0)
Numerical and Analytical Modelling of Depletion‐Mode MOS Transistors in Ohmic Region at Liquid Helium Temperature (1990) (0)
Late News (1977) (0)
Reliability issues of offset drain transistors after different modes of electrical stress (1993) (0)
Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance (2010) (0)
Noise Analysis of Si-MOSFET's with Gate Oxides Deposited by Low Pressure RTCVD (1994) (0)
Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage (2018) (0)
Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction (2011) (0)
Low Temperature Generation of Stress Induced Leakage Current. Degradation Mechanism: E or 1/E Model? (1999) (0)
Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET (2006) (0)
Impact of substrate orientation on Ultra Thin BOX Fully Depleted SOI electrical performances (2012) (0)
Comparison of two analog buffers implemented with low-temperature polysilicon thin-film transistors for active matrix displays applications (2008) (0)
Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007)) (2007) (0)
Several Issues for Analog Design with a 0.18 µm CMOS Technology at Low Temperature (2010) (0)
Investigation of interface defects and bulk charges in metal gate HfO_2 MOSFETs (2006) (0)
<emphasis emphasistype="italic">In Situ</emphasis> Comparison of Si/High- <formula formulatype="inline"><tex Notation="TeX">$\kappa$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}/ \hbox{SiO}_{2}$</tex></formula> Channel Properties in SOI MOSFETs (2009) (0)
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs (2021) (0)
On the mobility reduction in quasi ballistic DG nano MOSFET (2007) (0)
"Materials, Devices and Systems Science, Engineering and Architectures" (Proceedings of ISCDG'2012) (2013) (0)
Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition (1997) (0)
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs (2016) (0)
CMP-less Co-Integration of Tunable Ni-TOSI CMOS for Low Power Digital and Analog Applications (2007) (0)
Low‐Frequency Noise of Single Junction GaAs Solar Cell Structure (2009) (0)
Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs (2012) (0)
Novel on-resistance based methodology for MOSFET electrical characterization (2020) (0)
Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007)) (2007) (0)
Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices (2009) (0)
Low‐frequency noise in silicon on insulator MOSFETs: Experimental and numerical simulation results (2008) (0)
Hot Carrier effects and time-dependent degradation laws in 0.1um bulk Si n-MOSFETs (1997) (0)
Thermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers (1991) (0)
Characterization and modelling of device variability in advanced CMOS technologies (2010) (0)
xide Thickness Extraction micron Technologies (1997) (0)
Statistical low-frequency noise characterization in sub-15 nm Si/SiGe nanowire Trigate pMOSFETs (2017) (0)
In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature (2007) (0)
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications (2022) (0)
Characterization and modeling of low-frequency noise in sub-0.1-μm SiGe pMOSFETs (2004) (0)
Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor (2019) (0)
NDR Controlled Multilevel Programming in PoRRAM with All-Organic Active Layer and Inert Electrodes (2011) (0)
A Comprehensive Analysis of the Relaxation Phenomena in MOSFET's after Uniform Fowler-Nordheim Injection (1993) (0)
Study of Drain-Induced-Barrier Lowering in Deep Submicron MOSFETs Versus Temperature (1994) (0)
Reliability issues of furnace nitridated oxides prepared with reduced thermal budget in N2O ambient (1996) (0)
RAPIDO Testing of Assisted Write and Read operations for SRAMs (2016) (0)
Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress (2007) (0)
Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements (1986) (0)
Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures (2009) (0)
Impact of the Furnace Nitridation Temperature in N2O Ambient on the Quality of the Si/SiO2 System (1994) (0)
“Pinch to Detect”: A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs (2021) (0)
Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge (2008) (0)
Challenges andProspects ofRF Oscillators Using Silicon Resonant TunnelingDiodes (2009) (0)
The Core-Shell Junctionless MOSFET (2022) (0)
Low Frequency Noise in High Speed SiGe:C HBTs after Forward and Mixed‐Mode Stress (2009) (0)
New Features on the SILC in MOSFETs with Ultrathin Oxides (2006) (0)
Reliability Characteristics of a 150GHZ fT/fmax Si/SiGeC Heterojunction Bipolar Transistor Under Reverse, Forward and Mixed-Mode Stress (2006) (0)
Low-Frequency Noise Characterizations of Back-gate ZnO Nanorod Field-Effect Transistor Structure (2007) (0)
On the physical origins of mismatch in Si/SiGe:C heterojunction bipolar transistors for BiCMOS technologies (2008) (0)
Impact of Film Thickness on LF Noise in SOI Devices (2006) (0)
Electrical characterization and modeling of FDSOI MOSFETs for Cryo-Electronics (2022) (0)
Noise characterisation of silicon MOSFETs degraded by F-N injection (1990) (0)
Challenges and prospects of RF oscillators using silicon resonant tunneling diodes (2009) (0)
Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties (2019) (0)
Topical Issue: “2012 International Semiconductor Conference Dresden-Grenoble” (2012 ISCDG) (2013) (0)
LF Noise Investigations of 0.3 μm Gate n-MOSFETs Reliability and Micrometre Nitrided Gate Oxide MOSFETs (1994) (0)
Low-temperature electrical characterization of fully depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 gate stack for the 32-nm technology node (2009) (0)
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits (2021) (0)
Electrical simulation and characterization of random networks of conducting 1D structures (2013) (0)
Static and low frequency noise characterization of P-type polymer and N-type small molecule OFETs (2010) (0)
Analysis of low-frequency noise in organic field-effect transistors combining static and noise data (2011) (0)
New perspectives in defect centric model for NBTI reliability (2019) (0)
In Depth Parasitic Capacitance Analysis on Gan-Hemts with Recessed Mis Gate (2022) (0)
Excess drain noise simulation in ultrathin oxides MOSFETs (2006) (0)
Hysteresis and critical phenomena in silicon on insulator MOSFET's (1991) (0)
Modelling the initial regime of dry thermal oxidation of silicon (2008) (0)
Raised Source/Drain on 50nm CMOS Circuits : Propagation Delay and Dynamic Power Optimizations (2002) (0)
Analysis of Stress Relaxation and Growth Kinetics for Two-Step Thermal Oxidation of Silicon (1988) (0)
Impact of hot carrier stress on small signal MOSFET RF parameters (2010) (0)
Hot-carrier induced degradation of offset gated polysilicon TFTs (2004) (0)
Low Temperature Chatacterization of High-k Dielectric Metal Gate FD-SOI nMOSFETs (2007) (0)
Electrical noise in semiconductor devices - Case of CMOS technologies. (2009) (0)
Quantization effects in silicided and metal gate MOSFETs (2009) (0)
Sinano Institute vision in the More Moore , More than Moore and Beyond-CMOS domains (2009) (0)
Comment on ``Transconductance degradation in silicon field-effect transistors resulting from inversion layer degeneracy'' (1991) (0)
SINANO: SILICON-BASED NANODEVICES EUROPEAN NETWORK OF EXCELLENCE OF THE 6th FRAMEWORK PROGRAMME (2004) (0)
Transport parameter extraction in short channel MOS transistors (2006) (0)
(Invited) Second Harmonic Generation: Non-Linear Optics for Characterization of Electrical Properties of Dielectric-on-Semiconductor Interfaces (2022) (0)
Low temperature characterization of different deep submicron SOI and FinFET devices (2010) (0)
Low-frequency noise in surface-treated AlGaN/GaN HFETs (2018) (0)
Erratum: “Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress” [J. Appl. Phys. 82, 2548 (1997)] (1998) (0)
1 / f Noise Modeling at Low Temperature with the EKV 3 Compact Model (2009) (0)
Modeling and electrical characterization of MOS structures with ultra thin gate oxide (2003) (0)
Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences (2006) (0)
Contact Resistance in Top Gate / Bottom Contact OTFTs. (2010) (0)
Impact of Low-Temperature Coolcube™ Process on the Performance of FDSOI Tunnel FETs (2018) (0)
The Frequency Distributions and Variability of Threshold Voltage Induced by NBTI and HCI Degradations in Si Nanowire FETs (2020) (0)
First SOI Tunnel FETs with low-temperature process (2017) (0)
(Invited) Dipoles in Gate-Stack/FDSOI Structure (2017) (0)
Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples (1989) (0)
Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors (2004) (0)
On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech. (2012) (0)
Gate oxide Reliability assessment optimization (2002) (0)
Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs (2020) (0)
Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K (2020) (0)
Impact of Biaxially Strain on the Low Frequency Noise of Silicon n-MOSFETs With Ultra Thin Gate Oxides (2009) (0)
Reliability characteristics of 150GHz fT/fmax Heterojunction Bipolar Transistors under reverse, forward and mixed-mode stress (2006) (0)
Reliability issues of offset drain transistors after different modes of static electrical stress (1993) (0)
Impact of oxide charge buildup on Fowler-Nordheim tunneling current characteristics in a MOS structure (1997) (0)
1/f Noise Modeling at Low Temperature with the EKV3 Compact Model (2009) (0)
Analytic model for low-frequency noise in nanorod devices. (2008) (0)
New insight on Stress Induced Leakage Current on SiO2/HfO2 stack (2006) (0)
Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain (2022) (0)
Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster) (2006) (0)
Electrostatic effect of localised charge in dual bit memory cells with discrete traps (2004) (0)
Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104, 013301 (2014)] (2014) (0)
Understanding theCarbonImpact onSi/SiGe:C HBT BaseCurrent Mismatch (2007) (0)
Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI (2009) (0)
NH 3 treatments of Hf-based layers for application as NVM active dielectrics (2007) (0)
(Invited) Review of Identification Methods of 1/f Noise Mechanisms in Polymer-Based OTFTs (2021) (0)
Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices (2019) (0)
Resistive switching of HfO2-based metal-insulator-metal devices (2014) (0)
High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT wafer adapted from four-point probe technique (2017) (0)
New Insights Into Oxide Breakdown Current Partitioning Analysis for MOS Devices (2012) (0)
Analysis and modelling of wafer level process variability in advanced FD-SOI devices using split C-V and gate current data (2018) (0)
Sensitivity of Silicon Nanowire Biochemical Sensors (2014) (0)
Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs (2015) (0)
A Simple Model of the Drain Saturation Voltage Dependence with Gate Voltage for Short-Channel MOSFETs (1987) (0)
On the modelling of mobility in silicon MOS transistors (1990) (0)
Guest Editorial (2003) (0)
Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors (2014) (0)
Performance and physical mechanisms in LDD MOS transistor from room to liquid helium temperatures (1993) (0)
Electrical Characterization of Si nanowires (2010) (0)
Experimental characterization of advanced nano-scale MOSFETs (2008) (0)
Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors (2022) (0)
Influence of interface coupling on the mobility in FD-SOI MOSFETs (2006) (0)
ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS (2011) (0)
Noisecharacterisation ofsilicon MOSFETsdegraded byF-Ninjection (1990) (0)
Reliability analysis on low temperature gate stack process steps for 3D sequential integration (2017) (0)
Corrigendum to “Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model” [Solid-State Electron. 170 (2020) 107835] (2020) (0)
New Methodology for Series-Resistance-Immune MOSFET Parameter Extraction from Linear to Saturation Region (2019) (0)
Non-metallic effects in silicided gate MOSFETs (2009) (0)
MOSFET's as a function of temperature (1994) (0)
On the understanding of the effects of high pressure deuterium and hydrogen final anneal (2012) (0)
SOI Materials and Characterization (2006) (0)
Degradation of Submicron MOSFETs after Aging (1988) (0)
LF Noise and Tunneling Current in Nanometric SiO2 Layers (2005) (0)
Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETs (2013) (0)
Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack (2018) (0)
The variability of the surface scattering coulombian mobility in dielectric interface of Si-Nanowire GAA-MOSFET at 20 nm Length channel (2020) (0)
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs (2012) (0)
Hot carrier stress in deep submicrometer MOSFET's (2001) (0)
Surface Segregation andElectrical Studies ofHeavily Arsenic andPhosphorus insitu DopedEpiandPolySilicon. (2006) (0)
Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors (2023) (0)
Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts (2021) (0)
Aspects of nanoelectronics in Minatec. (2008) (0)
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material (2013) (0)
Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs (2020) (0)
Electrical Characterization and Modelling of Ultra-thin (1.8-3.4 nm) Gate Oxides (1999) (0)
Tensile strain in arsenic heavily doped (2017) (0)
Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques [CMOS transistors] (2004) (0)

This paper list is powered by the following services:

What Schools Are Affiliated With Gérard Ghibaudo?

Gérard Ghibaudo is affiliated with the following schools:

Gérard Ghibaudo's Academic­Influence.com Rankings

Gérard Ghibaudo's Degrees

Why Is Gérard Ghibaudo Influential?

Gérard Ghibaudo's Published Works

Published Works

What Schools Are Affiliated With Gérard Ghibaudo?

Gérard Ghibaudo's AcademicInfluence.com Rankings