Gertrude Neumark
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Most Influential Person Now
American physicist
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Physics
Gertrude Neumark's Degrees
- PhD Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
Why Is Gertrude Neumark Influential?
(Suggest an Edit or Addition)According to Wikipedia, Gertrude Fanny Neumark, also known as Gertrude Neumark Rothschild, was an American physicist, most noted for her work in material science and physics of semiconductors with emphasis on optical and electrical properties of wide-bandgap semiconductors and their light-emitting devices.
Gertrude Neumark's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Quantum confinement in ZnO nanorods (2004) (256)
- Origin of defect-related green emission from ZnO nanoparticles: effect of surface modification (2007) (227)
- Zinc oxide quantum rods. (2004) (207)
- Morphological control and photoluminescence of zinc oxide nanocrystals. (2005) (197)
- Ionization energy of the shallow nitrogen acceptor in zinc selenide (1983) (85)
- Acceptor doping in ZnSe versus ZnTe (1993) (82)
- Defects in wide band gap II-VI crystals (1997) (78)
- Are impurities the cause of ’’self’’‐compensation in large‐band‐gap semiconductors? (1980) (77)
- Theory of the Anomalous Photovoltaic Effect of ZnS (1962) (67)
- Shallow acceptors and p‐type ZnSe (1979) (61)
- Blue‐Green Diode Lasers (1994) (58)
- Zn- Se- Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers (2005) (51)
- Concentration and Temperature Dependence of Impurity-to-Band Activation Energies (1972) (45)
- Optical properties of d-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium (2001) (38)
- DECAY DYNAMICS IN DISORDERED SYSTEMS : APPLICATION TO HEAVILY DOPED SEMICONDUCTORS (1998) (38)
- Li doped ZnSe and problems of p-type conduction (1982) (34)
- Transition from pentode- to triode-like characteristics in field effect transistors (1967) (31)
- Effect of deep levels on semiconductor carrier concentrations in the case of (1982) (31)
- Energy of an interstitial donor in ZnSe from pair spectra (1984) (28)
- Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide (1995) (25)
- New Model for Interface Charge-Carrier Mobility: The Role of Misfit Dislocations (1968) (25)
- Achievement of low‐resistivity p‐type ZnSe and the role of twinning (1989) (25)
- Wide bandgap light emitting materials and devices (2007) (24)
- Theoretical Bound on the Thermoelectric Figure of Merit of Two‐Band Semiconductors (1963) (23)
- High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be}Zn co-irradiation (2000) (22)
- Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films (1999) (22)
- Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines (2007) (18)
- Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique (2000) (18)
- Chapter 1 Deep Levels in Wide Band-Gap III-V Semiconductors (1983) (18)
- Determination of size and composition of optically active CdZnSe/ZnBeSe quantum dots (2003) (18)
- Electroluminescence and Thermoluminescence of ZnS Single Crystals (1956) (18)
- Wide bandgap light-emitting devices materials and doping problems (1997) (17)
- Dynamics of the radiative recombination in cylindrical nanostructures with type-II band alignment (2009) (17)
- Optical properties and growth mechanism of multiple type-IIZnTe∕ZnSequantum dots grown by migration-enhanced epitaxy (2008) (17)
- Auger Theory at Defects—Application to States with Two Bound Particles in GaP (1973) (14)
- Theory of the influence of hot electron effects on insulated gate field effect transistors (1967) (14)
- Effects of Be on the II–VI/GaAs interface and on CdSe quantum dot formation (2001) (14)
- Theory of the surface gate dielectric triode (1966) (14)
- Direct correlation of reversal rate dynamics to domain configurations in micron-sized permalloy elements (2005) (13)
- Analysis of the pretransition range of the metal-insulator transition in doped semiconductors (1979) (13)
- Effect of indium on the properties of DX centers in Si‐doped Iny(Ga0.3Al0.7)1−yAs (1990) (12)
- Auger coefficient of GaP(Zn,O). I. Evaluation from the luminescence decay (1977) (12)
- Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe (2012) (12)
- The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials (1999) (11)
- A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium (2005) (11)
- Temperature dependence of luminescence in ZnSe and role of excitation transfer (1994) (11)
- An explanation for the anomalous impurity concentrations in Si as measured by the Hall effect (1981) (11)
- Time‐resolved luminescence studies of heavily nitrogen doped ZnSe (1996) (10)
- Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures (2006) (10)
- Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy (2001) (10)
- Use of Gaussian Wave Functions in Molecular Calculations (1957) (10)
- Growth and characterization of ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se asymmetric coupled quantum well structures for quantum cascade laser applications (2008) (9)
- Doping Aspects of Zn-Based Wide-Band-Gap Semiconductors (2006) (9)
- Pair Luminescence as a Technique for Impurity Characterization (1989) (9)
- Compensation in heavily N-doped ZnSe: a luminescence study (1996) (9)
- Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures (2012) (9)
- Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy (2006) (9)
- Extension of the theory of thin-film transistors (1964) (8)
- Comment on ’’Comparison of experimental and theoretical carrier concentrations in heavily doped n‐type silicon’’ (1977) (8)
- Pair spectra and evaluation of the dielectric constant: Application to ZnSe (1984) (8)
- Term structure of bound excitons in cubic ZnSe:Na (1991) (7)
- Potential Profiling as a Means to Determine Conductivity Type: Application to ZnSe (1980) (7)
- Time resolved photoluminescence studies of Zn–Se–Te nanostructures with sub‐monolayer quantities of Te grown by molecular beam epitaxy (2004) (7)
- Solubilities, defect reactions and doping limits in ZnSe (1992) (7)
- Theory of the Influence of Misfit Dislocations on Interfacial Mobility and Hall Effect (1970) (7)
- Photoluminescence and magneto-optical properties of multilayered type-II ZnTe/ZnSe quantum dots (2010) (6)
- Interstitial Li and Na in ZnSe-pairing energies and lattice location (1984) (6)
- Excitation transfer in donor‐acceptor pair luminescence (1991) (6)
- Photoluminescence of ZnxCdyMg1−x−ySe alloys as a manifestation of the breakdown of “common-anion rule” (2003) (6)
- Preferential donor-acceptor pairing in heavily N-doped ZnSe? (1994) (6)
- Quantum structures in Zn–Se–Te system containing submonolayer quantities of Te (2004) (6)
- Efficiency of Electroluminescence in ZnS (1959) (6)
- CdSe quantum dots grown on ZnSe and Zn0.97Be0.03Se by molecular-beam epitaxy: Optical studies (2004) (6)
- Study of intersubband transitions of ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications (2007) (5)
- Native Defect Compensation in Wide-Band-Gap Semiconductors (1992) (5)
- Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure (2001) (5)
- Role of excitation transfer in luminescence spectra and decay (1992) (5)
- High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te (2001) (5)
- Preferential donor–acceptor pairing results for ZnSe:Na (1994) (4)
- Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition (2003) (4)
- Time-resolved photoluminescence of heavily nitrogen-doped ZnSe: role of fluctuations (1998) (4)
- Effect of electron‐hole correlation on acoustic phonon broadening of bound exciton spectra (1994) (4)
- Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se (2003) (4)
- Decay kinetics of the red luminescence of GaP(Zn, O) for quasi-thermal-equilibrium conditions (1974) (4)
- Structural defects and p-type conductivity in ZnSe (1983) (4)
- ZnSeTe Rediscovered: From Isoelectronic Centers to Quantum Dots (2007) (3)
- Optical investigation of CdSe/Zn(Be)Se quantum dot structures: size and Cd composition (2004) (3)
- Properties of MBE-Grown ZnBeSe: Study of Be Isoelectronic Traps and of Dopant Behavior (2002) (3)
- Temperature evolution of excitonic luminescence in nitrogen doped zinc selenide (1997) (3)
- Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies (2001) (3)
- Acoustic phonon-broadened line shape of donor-acceptor pair spectra : a first-principles study (1991) (3)
- Excimer Laser Melting of MBE-ZnSe (1992) (2)
- Donor-acceptor pair decay and evaluation of the recombination constant and the Bohr radii of shallow impurities in ZnSe (1994) (2)
- Characterization of ZnSe:N Using Screening Effects (1995) (2)
- In-situ Magnetodynamic Experiments Achieved with the Design of an In-plane Magnetic Field Specimen Holder (2003) (2)
- Doping and conductivity in widegap II-VI compounds (1992) (2)
- Activation of N-Acceptor in MOCVD-ZnSe by Excimer Laser Annealing (1992) (2)
- Observation of preferential donor-acceptor pairing in ZnSe: Na (1994) (2)
- Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos (1991) (2)
- Auger coefficient of GaP(Zn, O). II. Evaluation from the temperature dependence of the luminescence efficiency (1977) (2)
- Laser processing of II–VI compounds for improved doping: application to ZnSe:N (1997) (2)
- Surface Morphology and Photoluminescence Spectra of ZnSe (Na) After Excimer Laser Annealing (1989) (1)
- Thermoluminescence Measurements on ZnS Phosphors in Vacuo (1955) (1)
- Heavily p-Type Doped ZnSe and ZnBeSe (2002) (1)
- Optical properties of semiconductors with the Coulomb potential fluctuation: case of co-doped ZnSe:(N,Cl) (2004) (1)
- Fluctuation theory of donor-acceptor pair luminescence in compensated semiconductors (2004) (1)
- Comment on ‘‘Carrier concentration and activation energy in heavily donor‐doped silicon’’ [J. Appl. Phys. 61, 591 (1987)] (1988) (0)
- Molecular-beam epitaxy growth and properties of BexZn1−xTe alloys for optoelectronic devices (2002) (0)
- Microstructure of Delta-Doped ZnSe:(Te, N) Grown by Migration Enhanced Epitaxy (2005) (0)
- POTENTIAL PROFILING AS A MEANS TO DETERMINE CONDUCTIVITY TYPE: APPLICATION TO ZINC SELENIDE (1980) (0)
- Investigation of spatial correlation of type-II ZnTe quantum dots embedded in ZnCdSe barriers (2012) (0)
- Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report (2004) (0)
- CdZnSe/Zn(Be)Se Quantum Dot Structures: Size, Chemical Composition and Phonons (2003) (0)
- Photoluminescence of d-doped ZnSe : „ Te , N ... grown by molecular beam epitaxy (2001) (0)
- Donor-Acceptor Pair Line Luminescence in ZnSe Re-Visited (1984) (0)
- Research and Development of Low-Light-Level/Near IR Camera Tube with Solid-State Array Target. (1969) (0)
- Optical and Electrical Properties of Zn_{1-x}Be_{x}Se Grown by Molecular Beam Epitaxy (2004) (0)
- Bound Excitonic Recombination in ZnBeSe (2000) (0)
- Ultraviolet-induced Photoluminescence Degradation and Enhancement in GaN (1998) (0)
- ODMR Studies of DAP-Luminescence in Heavily N-Doped ZnSe (1997) (0)
- MOMENTUM MATRIX ELEMENTS FROM A ONE..DIMENSIONAL RECTANGULAR-WELL POTENTIAL MODEL (1964) (0)
- OPTICAL AND ELECTRICAL PROPERTIES OF Zn1−xBexSe GROWN BY MOLECULAR BEAM EPITAXY (2005) (0)
- Semiconductor Luminescence and Effects of Excitation Transfer (1993) (0)
- Photoluminescence characterization of MBE grown Zn 1 ~ x Be x (2000) (0)
- Photoluminescence studies of compensated p-type ZnSe:N(P) under hydrostatic pressure (2000) (0)
- Luminescence decay studies on δ-doped ZnSe:Te (2001) (0)
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