Gilles Patriarche
#145,764
Most Influential Person Now
Researcher
Gilles Patriarche's AcademicInfluence.com Rankings
Download Badge
Physics
Gilles Patriarche's Degrees
- PhD Physics Université Paris Cité
- Masters Physics University of Geneva
- Bachelors Physics University of Geneva
Why Is Gilles Patriarche Influential?
(Suggest an Edit or Addition)Gilles Patriarche's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Why does wurtzite form in nanowires of III-V zinc blende semiconductors? (2007) (663)
- Core/shell colloidal semiconductor nanoplatelets. (2012) (315)
- Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth (2005) (255)
- Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures. (2016) (246)
- Crystal phase quantum dots. (2010) (235)
- Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets. (2014) (219)
- Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm (2001) (171)
- From excitonic to photonic polariton condensate in a ZnO-based microcavity. (2013) (145)
- Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis (2007) (140)
- Type-II CdSe/CdTe core/crown semiconductor nanoplatelets. (2014) (136)
- Predictive modeling of self-catalyzed III-V nanowire growth (2013) (136)
- van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties. (2016) (133)
- Infrared Photodetection Based on Colloidal Quantum-Dot Films with High Mobility and Optical Absorption up to THz. (2016) (129)
- Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires (2013) (128)
- Silicon nanowires coated with silver nanostructures as ultrasensitive interfaces for surface-enhanced Raman spectroscopy. (2009) (127)
- Gradient CdSe/CdS Quantum Dots with Room Temperature Biexciton Unity Quantum Yield. (2015) (119)
- Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts. (2008) (117)
- Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization (2007) (117)
- Growth and characterization of InP nanowires with InAsP insertions. (2007) (115)
- Sub-5nm FIB direct patterning of nanodevices (2007) (114)
- Synthesis and optical characterizations of Yb-doped CaF2 ceramics (2009) (113)
- Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy (2006) (112)
- Protein transport through a narrow solid-state nanopore at high voltage: experiments and theory. (2012) (108)
- Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys (2020) (107)
- Er3+-doped PbF2: Comparison between nanocrystals in glass-ceramics and bulk single crystals (2006) (106)
- Synthesis and optical characterizations of undoped and rare-earth-doped CaF2 nanoparticles (2006) (104)
- Colloidal CdSe/CdS dot-in-plate nanocrystals with 2D-polarized emission. (2012) (103)
- New progresses in transparent rare-earth doped glass-ceramics (2001) (103)
- Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth (2014) (98)
- Origin of light scattering in ytterbium doped calcium fluoride transparent ceramic for high power lasers (2011) (96)
- Nucleation antibunching in catalyst-assisted nanowire growth. (2010) (94)
- Subpicosecond pulse generation at 134GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56μm (2006) (93)
- Dynamics of colloids in single solid-state nanopores. (2011) (89)
- Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy (2016) (87)
- Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine (1997) (86)
- Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene. (2015) (85)
- Composition profiling of InAs/GaAs quantum dots (2004) (84)
- In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO (2008) (83)
- Atomic Step Flow on a Nanofacet. (2018) (82)
- Role of nonlinear effects in nanowire growth and crystal phase (2009) (81)
- Mechanistic Insight and Optimization of InP Nanocrystals Synthesized with Aminophosphines (2016) (80)
- Rare-earth doped oxyfluoride glass-ceramics and fluoride ceramics: Synthesis and optical properties (2007) (80)
- GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature (2007) (80)
- GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission (2004) (79)
- Growth kinetics of a single InP 1-x As x nanowire (2010) (76)
- Synthesis of Zinc and Lead Chalcogenide Core and Core/Shell Nanoplatelets Using Sequential Cation Exchange Reactions (2014) (76)
- Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices (2007) (72)
- Carbon nanotube translocation to distant organs after pulmonary exposure: insights from in situ (14)C-radiolabeling and tissue radioimaging. (2014) (71)
- Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying. (2008) (70)
- Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001) (2006) (69)
- Effect of CeF3 addition on the nucleation and up-conversion luminescence in transparent oxyfluoride glass-ceramics (2005) (68)
- Zinc blende GaAsSb nanowires grown by molecular beam epitaxy (2008) (62)
- Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices (1997) (61)
- Electrolyte-gated field effect transistor to probe the surface defects and morphology in films of thick CdSe colloidal nanoplatelets. (2014) (61)
- Phase selection in self-catalysed GaAs nanowires. (2020) (61)
- Silicon‐Microtube Scaffold Decorated with Anatase TiO2 as a Negative Electrode for a 3D Litium‐Ion Microbattery (2014) (61)
- Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy (2011) (60)
- Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser (2003) (59)
- Selective CO2 methanation on Ru/TiO2 catalysts: unravelling the decisive role of the TiO2 support crystal structure (2016) (58)
- Focused ion beam sculpted membranes for nanoscience tooling (2006) (57)
- Structural characterisation of transparent oxyfluoride glass-ceramics (2000) (57)
- Novel heterostructured Ge nanowires based on polytype transformation. (2014) (56)
- Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires (2010) (56)
- Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure (2015) (54)
- Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers (2007) (54)
- Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE (2012) (53)
- Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55 μm emission (2001) (53)
- Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4 (1997) (53)
- Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy (2002) (52)
- Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography (2015) (51)
- Crystal growth of bullet-shaped magnetite in magnetotactic bacteria of the Nitrospirae phylum (2015) (50)
- Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs (2003) (50)
- Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate (2004) (50)
- Multi-scale structuration of glasses: Observations of phase separation and nanoscale heterogeneities in glasses by Z-contrast scanning electron transmission microscopy (2012) (50)
- Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory. (2016) (49)
- Quantum cascade lasers grown on silicon (2018) (48)
- Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays. (2018) (48)
- Thermodynamic analysis of Zn-Cd-Te, Zn-Hg-Te and Cd-Hg-Te: phase separation in ZnxCd1−xTe and ZnxHg1−xTe (1992) (47)
- Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials (2006) (47)
- Fabrication and characterization of a room-temperature ZnO polariton laser (2013) (46)
- Sidewall passivation assisted by a silicon coverplate during Cl2–H2 and HBr inductively coupled plasma etching of InP for photonic devices (2008) (46)
- Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs. (2004) (46)
- Polarization dependence study of electroluminescence and absorption from InAs∕GaAs columnar quantum dots (2007) (46)
- Nucleation efficiency of erbium and ytterbium fluorides in transparent oxyfluoride glass-ceramics (2005) (45)
- Exploration of the ultimate patterning potential achievable with focused ion beams. (2005) (45)
- Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires. (2015) (45)
- Boron distribution in the core of Si nanowire grown by chemical vapor deposition (2012) (45)
- Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications (2012) (45)
- Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate (2008) (45)
- Transmission electron microscopy observations of low-load indents in GaAs (1999) (44)
- Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications (2017) (44)
- Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy (2006) (43)
- Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers (2001) (42)
- Plastic deformation of III–V semiconductorsunder concentrated load (2003) (42)
- Conductance statistics from a large array of sub-10 nm molecular junctions. (2012) (41)
- Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study (2013) (40)
- Hair fiber as a nanoreactor in controlled synthesis of fluorescent gold nanoparticles. (2012) (40)
- Functionalized Solid-State Nanopore Integrated in a Reusable Microfluidic Device for a Better Stability and Nanoparticle Detection. (2017) (40)
- Subpicosecond pulse generation at 134 GHz and low radiofrequency spectral linewidth in quantum dash-based Fabry-Perot lasers emitting at 1.5 [micro sign]m (2006) (40)
- Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots (2007) (39)
- Growth-in-place deployment of in-plane silicon nanowires (2011) (39)
- Elastic anisotropy of polycrystalline Au films: Modeling and respective contributions of X-ray diffraction, nanoindentation and Brillouin light scattering (2010) (38)
- FIB carving of nanopores into suspended graphene films (2012) (38)
- Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems (2009) (37)
- Wet‐Route Synthesis and Characterization of Yb:CaF2 Optical Ceramics (2016) (37)
- Indentation-induced crystallization and phase transformation of amorphous germanium (2004) (36)
- Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE (2017) (36)
- Uprooting defects to enable high-performance III–V optoelectronic devices on silicon (2019) (36)
- Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm (2006) (36)
- Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture (1996) (36)
- Universal description of III-V/Si epitaxial growth processes (2018) (36)
- Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth (2011) (35)
- Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection (2004) (35)
- Mesoscopic scale description of nucleation processes in glasses (2011) (35)
- Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot. (2016) (35)
- Preparation and up-conversion luminescence of 8 nm rare-earth doped fluoride nanoparticles. (2008) (35)
- Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures. (2014) (35)
- Large array of sub-10-nm single-grain Au nanodots for use in nanotechnology. (2011) (34)
- Wetting layer states of InAs/GaAs self-assembled quantum dot structures. Effect of intermixing and capping layer (2007) (34)
- Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime (2003) (34)
- BAlN thin layers for deep UV applications (2015) (33)
- Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity (2000) (33)
- Direct FIB fabrication and integration of single nanopore devices for the manipulation of macromolecules (2010) (33)
- Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si (2012) (33)
- Deep structural analysis of novel BGaN material layers grown by MOVPE (2011) (32)
- Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice (2001) (32)
- Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region (2020) (32)
- Spontaneous compliance of the InP∕SrTiO3 heterointerface (2008) (31)
- Fast radiative quantum dots: From single to multiple photon emission (2007) (31)
- Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform. (2013) (31)
- Submicron-diameter semiconductor pillar microcavities with very high quality factors (2007) (30)
- Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr- O2 Chemistry (2008) (30)
- InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy (2005) (30)
- Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-/spl mu/m complex-coupled DFB lasers fabrication (1998) (30)
- Metallic Functionalization of CdSe 2D Nanoplatelets and Its Impact on Electronic Transport (2016) (30)
- Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement (2016) (29)
- Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots (2008) (29)
- AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm (2015) (29)
- Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy (2006) (29)
- Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy (2012) (29)
- A semiconductor laser device for the generation of surface-plasmons upon electrical injection. (2009) (29)
- Coupled HgSe Colloidal Quantum Wells through a Tunable Barrier: A Strategy To Uncouple Optical and Transport Band Gap (2018) (28)
- Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process (2016) (28)
- Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces (2013) (28)
- Influence of Ce3+ doping on the structure and luminescence of Er3+-doped transparent glass-ceramics (2006) (28)
- Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000) (28)
- 1.5 μm laser on GaAs with GaInNAsSb quinary quantum well (2003) (27)
- Growth and characterization of InAs columnar quantum dots on GaAs substrate (2007) (27)
- Characteristics of the surface microstructures in thick InGaN layers on GaN (2013) (27)
- Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots (2001) (27)
- Surface-emitting quantum cascade lasers with metallic photonic-crystal resonators (2009) (27)
- Silicon surface preparation for III-V molecular beam epitaxy (2015) (27)
- Improving InGaN heterojunction solar cells efficiency using a semibulk absorber (2017) (27)
- Highly crystalline urchin-like structures made of ultra-thin zinc oxide nanowires (2014) (26)
- Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands (2002) (26)
- Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties (2008) (26)
- Oxide glass used as inorganic template for fluorescent fluoride nanoparticles synthesis (2006) (26)
- Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate (2011) (26)
- Shear-driven phase transformation in silicon nanowires (2018) (26)
- Reactive-ion etching of high-Q and submicron-diameter GaAs∕AlAs micropillar cavities (2005) (26)
- Growth-interruption-induced low-density InAs quantum dots on GaAs (2008) (26)
- Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials (2012) (25)
- GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire (2011) (25)
- Excitonic properties of wurtzite InP nanowires grown on silicon substrate (2013) (25)
- Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration (2016) (25)
- New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer. (2016) (25)
- Photoluminescence from a single InGaAs epitaxial quantum rod (2008) (24)
- Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires (2009) (24)
- Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template (2014) (24)
- Biomimetic Nanotubes Based on Cyclodextrins for Ion-Channel Applications. (2015) (24)
- GaN/AlN free-standing nanowires grown by molecular beam epitaxy (2008) (24)
- Synthesis and photoluminescence properties of silicon nanowires treated by high‐pressure water vapor annealing (2007) (24)
- FIB patterning of dielectric, metallized and graphene membranes: A comparative study (2014) (24)
- Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates (2012) (24)
- Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs (2007) (23)
- 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy (1997) (23)
- In situ passivation of GaAsP nanowires (2017) (23)
- Nanoindentation of GaAs compliant substrates (2000) (23)
- Synthesis of Fluoride Nanoparticles in Non‐Aqueous Nanoreactors. Luminescence Study of Eu3+:CaF2 (2006) (23)
- Smooth sidewall in InP-based photonic crystal membrane etched by N2-based inductively coupled plasma (2008) (23)
- Multifunctional hybrid silica nanoparticles based on [Mo₆Br₁₄]²⁻ phosphorescent nanosized clusters, magnetic γ-Fe₂O₃ and plasmonic gold nanoparticles. (2014) (22)
- Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation (2007) (22)
- Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55μm (2008) (22)
- Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires (2011) (22)
- Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures (2008) (22)
- Elastic behavior of polycrystalline thin films inferred from in situ micromechanical testing and modeling (2006) (22)
- Subsurface deformations induced by a Vickers indenter in GaAs/AlGaAs superlattice (2002) (21)
- Development of reflective back contacts for high-efficiency ultrathin Cu(In,Ga)Se2 solar cells (2019) (21)
- Shape-engineered epitaxial InGaAs quantum rods for laser applications (2008) (21)
- 1.43 µm InAs bilayer quantum dot lasers on GaAs substrate (2006) (21)
- Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor (1999) (21)
- Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strains (1996) (21)
- Luminescence of polymorphous silicon carbon alloys (2005) (21)
- In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate (2018) (20)
- Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) (2006) (20)
- Solid-State Nanopore Easy Chip Integration in a Cheap and Reusable Microfluidic Device for Ion Transport and Polymer Conformation Sensing. (2018) (20)
- Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires. (2016) (20)
- Imaging the electric properties of InAs∕InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect (2006) (20)
- Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas (2007) (20)
- Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire (2013) (20)
- Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys (2015) (20)
- All-optical discrimination at 1.5 /spl mu/m using ultrafast saturable absorber vertical cavity device (2000) (19)
- Indentation-induced deformations of GaAs(011) at a high temperature (2003) (19)
- InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates (2012) (19)
- Inas nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications (2007) (19)
- GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth (2000) (19)
- Mid-infrared intersublevel absorption of vertically electronically coupled InAs quantum dots (2005) (19)
- Controlling the aspect ratio of quantum dots: From columnar dots to quantum rods (2008) (19)
- Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers (2013) (19)
- Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot (2006) (19)
- Optics with single nanowires (2008) (18)
- Low-load deformation of InP under contact loading; comparison with GaAs (2002) (18)
- Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties. (2018) (18)
- Development of robust interfaces based on crystalline γ-Al2O 3(001) for subsequent deposition of amorphous high-κ oxides (2007) (18)
- Polarity-induced changes in the nanoindentation response of GaAs (2004) (18)
- Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN (2015) (18)
- Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C (2013) (18)
- Inductively coupled plasma etching of GaAs suspended photonic crystal cavities (2009) (18)
- Effect of the {h11} orientations and polarities of GaAs substrates CdTe buffer layer structural properties (1993) (18)
- A Stress‐Free and Textured GaP Template on Silicon for Solar Water Splitting (2018) (18)
- Self-assembled Ge nanocrystals on BaTiO3∕SrTiO3∕Si(001) (2008) (18)
- Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy (2011) (17)
- Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength (2003) (17)
- Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures (2014) (17)
- Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals (2008) (17)
- Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy (2012) (17)
- Evidence for a narrow band gap phase in 1T′ WS2 nanosheet (2019) (17)
- Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si (2013) (17)
- InP1−xAsx quantum dots in InP nanowires: A route for single photon emitters (2013) (17)
- Advances in III-V Semiconductor Nanowires and Nanodevices (2018) (16)
- TEM-nanoindentation studies of semiconducting structures. (2007) (16)
- Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure (2015) (16)
- Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers (1997) (16)
- Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots (2002) (16)
- Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy : Independent effects of InAs and cap-layer growth rates (2007) (16)
- Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors (2014) (16)
- Devitrification of fluorozirconate glasses: from nucleation to spinodal decomposition (2001) (16)
- Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates (2015) (16)
- Si incorporation in InP nanowires grown by Au-assisted molecular beam epitaxy (2009) (16)
- Abrupt GaP/Si hetero-interface using bistepped Si buffer (2015) (16)
- Random stacking sequences in III-V nanowires are correlated (2014) (16)
- GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm (2015) (15)
- Indentation punching through thin (011) InP (2004) (15)
- TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures (2000) (15)
- Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes (2017) (15)
- Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modes (2008) (15)
- Optical and electronic properties of GaAs-based structures with columnar quantum dots (2007) (15)
- Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures. (2021) (15)
- Deformations induced by a Vickers indentor in InP at room temperature (2000) (15)
- Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask (2016) (15)
- Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient (2011) (15)
- Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon (2018) (15)
- Structure of nanoindentations in heavily n-and p-doped (001) GaAs (2008) (15)
- Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges (2006) (15)
- Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion (2017) (15)
- Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE (2006) (14)
- Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors (2010) (14)
- Engineering a Robust Flat Band in III-V Semiconductor Heterostructures. (2020) (14)
- Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm (2013) (14)
- Monodispersed MOF-808 Nanocrystals Synthesized via a Scalable Room-Temperature Approach for Efficient Heterogeneous Peptide Bond Hydrolysis (2021) (14)
- Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O2 steps for etching of GaAs with high selectivity (2009) (14)
- Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperature (2009) (14)
- Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the InAs/InP(001) system : Experiment and theory (2006) (14)
- Control of polarization and dipole moment in low-dimensional semiconductor nanostructures (2009) (14)
- Faceting mechanisms of Si nanowires and gold spreading (2012) (14)
- Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy (2006) (14)
- Influence of the surface reconstruction on the growth of InP on SrTiO3(0 0 1) (2009) (14)
- Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (2019) (14)
- Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm (2002) (13)
- Pushing absorption of perovskite nanocrystals into the infrared. (2020) (13)
- Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation (2013) (13)
- Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy (2003) (13)
- Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1 (2015) (13)
- Orientation dependent emission properties of columnar quantum dash laser structures (2009) (13)
- Encapsulation of Microperoxidase-8 in MIL-101(Cr)-X Nanoparticles: Influence of Metal–Organic Framework Functionalization on Enzymatic Immobilization and Catalytic Activity (2020) (13)
- Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE (2013) (13)
- High yield syntheses of reactive fluoride K1 − x(Y,Ln)xF1 + 2x nanoparticles (2009) (13)
- Interface roughness transport in terahertz quantum cascade detectors (2009) (13)
- Effect of diffusion from a lateral surface on the rate of GaN nanowire growth (2012) (13)
- Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C (2012) (13)
- Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast (2010) (13)
- Zinc-blende group III-V/group IV epitaxy: Importance of the miscut (2020) (13)
- Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm (2010) (13)
- Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands (2003) (13)
- POLAROGRAPHY AND RELATED ELECTRO-ANALYTICAL TECHNIQUES IN PHARMACY AND PHARMACOLOGY (1979) (13)
- Epitaxial growth of quantum rods with high aspect ratio and compositional contrast (2008) (13)
- Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy (2001) (13)
- Electroluminescence from nanocrystals above 2 µm (2021) (12)
- Efficient incorporation and protection of lansoprazole in cyclodextrin metal-organic frameworks. (2020) (12)
- Ultrathin Ni nanowires embedded in SrTiO3 : Vertical epitaxy, strain relaxation mechanisms, and solid-state amorphization (2018) (12)
- Thermodynamical analysis of the shape and size dispersion of InAs/InP(001) quantum dots (2006) (12)
- Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloys (2006) (12)
- Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires (2015) (12)
- Type I band alignment in GaAs 81 Sb 19 /GaAs core-shell nanowires (2015) (12)
- Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration (2017) (12)
- High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices (2015) (12)
- Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) (2009) (12)
- Telecom-wavelength single-photon sources for quantum communications (2007) (12)
- Correlating Structure and Detection Properties in HgTe Nanocrystal Films. (2021) (12)
- Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications (2019) (12)
- High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping (2014) (12)
- Room‐Temperature Plasticity of InAs (2000) (12)
- Degradation Mechanism of Porous Metal-Organic Frameworks by In Situ Atomic Force Microscopy (2021) (12)
- In-depth deformation of InP under a Vickers indentor (2001) (12)
- Thermal and Structural Characterization of Transparent Rare-Earth Doped Lead Fluoride Glass-Ceramics (2012) (11)
- Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer (2017) (11)
- GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity (2019) (11)
- Absolute determination of the asymmetry of the in-plane deformation of GaAs (001) (2004) (11)
- Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength (1996) (11)
- Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates (2020) (11)
- One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications (2008) (11)
- Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon (2012) (11)
- Dual light-emitting nanoparticles: second harmonic generation combined with rare-earth photoluminescence (2014) (11)
- Solid-solution strengthening in ordered In x Ga1 − x P alloys (2004) (11)
- Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111). (2017) (10)
- Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode (2018) (10)
- Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD (2004) (10)
- Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers (2015) (10)
- Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications (1997) (10)
- Deformations of (011) GaAs under concentrated load (2001) (10)
- Nonstoichiometric Low-Temperature Grown GaAs Nanowires. (2015) (10)
- Mechanical response of wall-patterned GaAs surface (2005) (10)
- Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths (2013) (10)
- Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs (1993) (10)
- Epitaxial growth of high-κ oxides on silicon (2008) (9)
- Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy (2003) (9)
- Role of V-pits in the performance improvement of InGaN solar cells (2016) (9)
- Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires (2012) (9)
- Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN. (2020) (9)
- MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates (2019) (9)
- Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate (2013) (9)
- Gold anchoring on Si sawtooth faceted nanowires (2011) (9)
- Step-bunching instability in strained-layer superlattices grown on vicinal substrates (2000) (9)
- Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate (2015) (9)
- Selective target protein detection using a decorated nanopore into a microfluidic device. (2021) (9)
- Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates (2019) (9)
- Non-linear solid solution strengthening of InGaAs alloy (2001) (9)
- Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy (2009) (9)
- Material flow at the surface of indented indium phosphide (1997) (9)
- InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon. (2019) (9)
- Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation (2014) (9)
- Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates (2019) (9)
- Confined VLS growth and structural characterization of silicon nanoribbons (2010) (8)
- Nanoscale elemental quantification in heterostructured SiGe nanowires. (2015) (8)
- Tolerance to Optical Feedback of 10 GBPs Quantum-Dash Based Lasers Emitting at 1.55 μm (2007) (8)
- Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regions (2016) (8)
- Versatile cyclodextrin nanotube synthesis with functional anchors for efficient ion channel formation: design, characterization and ion conductance. (2018) (8)
- Metal–organic framework/graphene oxide composites for CO2 capture by microwave swing adsorption (2021) (8)
- Twin formation during the growth of InP on SrTiO3 (2009) (8)
- Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity (2015) (8)
- Polarization- and diffraction-controlled second-harmonic generation from semiconductor metasurfaces (2019) (8)
- Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition. (2020) (8)
- Single crystalline boron rich B(Al)N alloys grown by MOVPE (2020) (8)
- Growth of GaNxAs1−x atomic monolayers and their insertion in the vicinity of GaInAs quantum wells (2004) (8)
- Effects of annealing on structure of GaAs(001) nanoindentations (2003) (8)
- Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate (2014) (7)
- Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy (2002) (7)
- Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy (2010) (7)
- Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands (2003) (7)
- Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon (2021) (7)
- Phase coherent transport in GaAs/AlGaAs core-shellnanowires (2013) (7)
- Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping (2017) (7)
- High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy (1998) (7)
- Characteristics of HgS nanoparticles formed in hair by a chemical reaction (2013) (7)
- Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate (2013) (7)
- Elastic properties of polycrystalline gold thin films: Simulation and X-ray diffraction experiments (2006) (7)
- Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics (2016) (7)
- In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge (2017) (7)
- Porous nanoparticles with engineered shells release their drug cargo in cancer cells. (2021) (7)
- Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes (2012) (7)
- Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer (2021) (7)
- Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures (2004) (7)
- Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires (2012) (7)
- Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst (2017) (7)
- Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001) (2006) (7)
- Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram (2019) (6)
- Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm (2015) (6)
- High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities (2012) (6)
- Cavity QED with a single QD inside an optical microcavity (2006) (6)
- Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy (2004) (6)
- Biomimetic ion channels formation by emulsion based on chemically modified cyclodextrin nanotubes. (2018) (6)
- Spray-Drying Polymer Encapsulation of CsPbBr3 Perovskite Nanocrystals with Enhanced Photostability for LED Downconverters (2021) (6)
- Organometallic precursors as catalyst to grow three-dimensional micro/ nanostructures : Spheres, clusters & wires (2007) (6)
- A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon (2019) (6)
- Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs (1993) (6)
- Impact of the sequence of precursor introduction on the growth and properties of atomic layer deposited Al-doped ZnO films (2018) (6)
- Potential of semiconductor nanowires for single photon sources (2009) (6)
- Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates (2015) (6)
- Normal-incidence (001) second-harmonic generation in ordered Ga 0.5 In 0.5 P (2001) (6)
- High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material (2011) (6)
- Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures (2007) (6)
- Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices (2009) (6)
- Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices (2022) (5)
- TEM study of the indentation behaviour of thin Au film on GaAs (2004) (5)
- Up to 300 K lasing with GeSn-On-Insulator microdisk resonators. (2022) (5)
- Dislocation networks adapted to order the growth of III-V semiconductor nanostructures (2005) (5)
- Growth of nanometric CuGaxOy structures on copper substrates (2005) (5)
- Challenges and Opportunities for Focused Ion Beam Processing at the Nano-Scale (2009) (5)
- Monolithic integration of InP based heterostructures on silicon using crystalline Gd 2 O 3 buffers (2008) (5)
- Nanoindentation investigation of solid-solution strengthening in III-V semiconductor alloys (2005) (5)
- Direct FIB fabrication and integration of “single nanopore devices” for the manipulation of macromolecules (2009) (5)
- Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy. (2019) (5)
- Nanoindentation response of a single micrometer-sized GaAs wall (2005) (5)
- InAs(Sb) quantum dots grown on GaAs by MBE (2006) (5)
- Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells (1996) (5)
- Stress-driven self-ordering of III–V nanostructures (2005) (5)
- Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma (2011) (5)
- Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures (2005) (5)
- Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP (1998) (5)
- Control of the interfacial abruptness of Au-catalyzed Si-Si1−xGex heterostructured nanowires grown by vapor–liquid–solid (2014) (5)
- Gold nanocluster distribution on faceted and kinked Si nanowires (2012) (5)
- Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well (2017) (5)
- MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics (2021) (5)
- Plastic behaviour of an AlAs/GaAs superlattice with a short period (2001) (5)
- N-enrichment at the GaAs1−xNx/GaAs(0 0 1) interface: microstructure and optical properties (2003) (5)
- An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon (2016) (5)
- GaNAsSb Alloy and Its Potential for Device Applications (2005) (5)
- High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process (2018) (5)
- High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx (2016) (5)
- Improvement of modal gain of InAs/InP quantum-dash lasers (2011) (5)
- Phase separation and surface segregation in Co–Au–SrTiO3 thin films: Self-assembly of bilayered epitaxial nanocolumnar composites (2019) (5)
- Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents (1997) (5)
- Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy (2014) (5)
- Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots (2001) (5)
- Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique (2013) (5)
- Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile (2010) (5)
- GeSnOI mid-infrared laser technology (2021) (5)
- Catalyst faceting during graphene layer crystallization in the course of carbon nanofiber growth (2014) (5)
- ZnS anisotropic nanocrystals using a one-pot low temperature synthesis (2015) (5)
- Guided-Mode Resonator Coupled with Nanocrystal Intraband Absorption (2022) (5)
- Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001) (2010) (4)
- Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties (2004) (4)
- Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE (2003) (4)
- Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst. (2020) (4)
- Optical and structural investigation of In1−xGaxP free-standing microrods (2005) (4)
- InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates. (2011) (4)
- Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots (2004) (4)
- Onset of plasticity in a Σ = 5 GaAs compliant structure (2001) (4)
- Evidence and control of unintentional As-rich shells in GaAs1–xPx nanowires (2019) (4)
- Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls (2019) (4)
- Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity (2003) (4)
- Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys (2020) (4)
- Structural analysis of site-controlled InAs/InP quantum dots (2011) (4)
- Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system (2009) (4)
- Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions (2015) (4)
- Voided Ge/Si Platform to Integrate III-V Materials on Si (2019) (4)
- Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates (2013) (4)
- Strain, magnetic anisotropy, and composition modulation in hybrid metal–oxide vertically assembled nanocomposites (2021) (4)
- Last advances in Yb3+ doped CaF2 ceramics synthesis (2011) (4)
- Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy (2021) (4)
- GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers (1994) (4)
- Lazarevicite-type short-range ordering in ternary III-V nanowires (2016) (4)
- Competition between InP and In2O3 islands during the growth of InP on SrTiO3 (2008) (4)
- Electronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level (2017) (4)
- Heteroepitaxial bonding of Si for hybrid photonic devices (2013) (4)
- Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates (2017) (4)
- Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires (2019) (4)
- Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells (2016) (3)
- Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(001) crystalline templates (2011) (3)
- Plasticity of misoriented (001) GaAs surface (2003) (3)
- Sub-picosecond pulse generation at 134 GHz using a quantum dash-based Fabry-Perot laser emitting at 1.56 /spl mu/m (2006) (3)
- 3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth (2020) (3)
- Local electronic transport through InAs/InP(0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe (2007) (3)
- Long-range ordering of III–V semiconductor nanostructures by shallowly buried dislocation networks (2004) (3)
- Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates (2016) (3)
- Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma (2007) (3)
- InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET (2019) (3)
- Double-crowned 2D semiconductor nanoplatelets with bicolor power-tunable emission (2022) (3)
- Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs (1997) (3)
- Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence (2018) (3)
- GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator (2005) (3)
- Nanoindentation response of a thin InP membrane (2008) (3)
- Nanoparticle Electrical Analysis and Detection with a Solid-state Nanopore in a Microfluidic Device☆ (2016) (3)
- Nanoindentation response of compound semiconductors (2007) (3)
- Investigation of new approaches for InGaN growth with high indium content for CPV application (2015) (3)
- Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si (2016) (3)
- Growth of III-Arsenide/Phosphide Nanowires by Molecular Beam Epitaxy (2011) (3)
- Nanostructure and luminescence properties of amorphous and crystalline ytterbium–yttrium oxide thin films obtained with pulsed reactive crossed-beam deposition (2015) (3)
- A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon (2019) (3)
- 1.43 /spl mu/m InAs bilayer quantum dot lasers on GaAs substrate (2006) (3)
- Influence of the twist angle on the plasticity of the GaAs compliant substrates realized by wafer bonding (2002) (3)
- Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization (2020) (3)
- Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy (2016) (3)
- Density-controlled growth of vertical InP nanowires on Si(111) substrates (2020) (3)
- Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer (2014) (3)
- Resonant TE Transmission Through a Continuous Metal Film: Perspectives for Low-Loss Plasmonic Elements (2013) (3)
- Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy (2007) (3)
- Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures (2007) (3)
- Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer (2019) (3)
- Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials (2019) (2)
- GaAsSbN: a material for 1.3-1.55 /spl mu/m emission (2000) (2)
- Axial junction GaAsP nanowires for solar cells applications (Conference Presentation) (2019) (2)
- Plasticity of GaAs compliant substructures (2001) (2)
- Infrared emission enhancement in Yb/Er/Ce-codoped glass-ceramics (2006) (2)
- Ceramic Cooking Ware (2001) (2)
- Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers (2004) (2)
- Topological surface states in epitaxial (SnBi2Te4)n(Bi2Te3)m natural van der Waals superlattices (2021) (2)
- De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer (2008) (2)
- Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition (2018) (2)
- Designing the relative impact of thickness/composition changes in selective area organometallic epitaxy for monolithic integration applications (1997) (2)
- Defect free strain relaxation of microcrystals on mesoporous patterned silicon (2022) (2)
- Polarity influence on the nanoindentation response of GaAs (2005) (2)
- InAs/InP Quantum Dash Based Electro Optic Modulator with Over 70 NM Bandwidth at 1.55 μM (2007) (2)
- Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy. (2022) (2)
- Heterostructure formation in nanowhiskers via diffusion mechanism (2008) (2)
- Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths (2022) (2)
- Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon (2020) (2)
- Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si (2014) (2)
- Structure and magnetism of orthorhombic epitaxial FeMnAs (2013) (2)
- Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO (2016) (2)
- Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies (2015) (2)
- Single photon sources using InAs/InP quantum dots (2009) (2)
- Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys (2020) (2)
- Aberration corrected STEM to study an ancient hair dyeing formula (2014) (2)
- Experimental quantification of atomically-resolved HAADF-STEM images using EDX. (2020) (2)
- Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN (2012) (2)
- Nano-Patterning of Graphene Structures Using Highly Focused Beams of Gallium Ions (2010) (2)
- Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation (2020) (2)
- One step Nano Selective Area Growth of localized InAs/InP quantum dots for single photon source applications (2008) (2)
- Structure of annealed nanoindentations in n- and p-doped (001 )GaAs (2009) (2)
- Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Si (2014) (2)
- Abstracts of the 24th international isotope society (UK group) symposium: synthesis and applications of labelled compounds 2015. (2018) (2)
- Regulated Dynamics with Two Monolayer Steps in Vapor-Solid-Solid Growth of Nanowires. (2021) (2)
- Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate (2004) (2)
- Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations. (2021) (2)
- Interphases and mechanical properties in carbon fibres/Al matrix composites (1993) (2)
- Investigation on Mn doping of Ge nanowires for spintronics (2014) (2)
- Plasticity of GaAs(011) at room temperature under concentrated load (2001) (2)
- InP nanowires grown on Silicon and SrTiO3 by VLS assisted MBE (2008) (1)
- Probing the electronic properties of CVD graphene superlattices (2016) (1)
- Doping influence on the nanoindentation response of GaAs (2009) (1)
- Optimization of 1550nm InAs/InP Quantum Dash and Quantum Dot based semiconductor optical amplifier (2009) (1)
- Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics. (2015) (1)
- A new way to integrate solid state nanopores for translocation experiments (2008) (1)
- Transformation de phase dans un film de germanium amorphe induite par nano-indentation (2005) (1)
- In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy. (2021) (1)
- urchin-like structures made of ultra-thin zinc oxide nanowires † (2014) (1)
- Towards polarization insensitive semiconductor optical amplifiers using InAs/GaAs columnar quantum dots (2008) (1)
- Electronic band gap of van der Waals α-As2Te3 crystals (2021) (1)
- Stored elastic energy influence on the elastic–plastic transition of GaAs structures (2012) (1)
- Quantum optics with single nanowire quantum dots (2010) (1)
- Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates (2011) (1)
- Localisation of silicon nanowires grown by UHV-CVD in (111)-oriented apertures opened in Si (001) (2009) (1)
- Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires (2014) (1)
- Dynamics of Droplet Consumption in Vapor–Liquid–Solid III–V Nanowire Growth (2021) (1)
- Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates (2013) (1)
- Nanowires for quantum optics (2010) (1)
- Epitaxial growth and picosecond carrier dynamics at 1.55µm of GaInAs/GaInNAs superlattices (2009) (1)
- Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm (2011) (1)
- Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates (2017) (1)
- Transmission Electron Microscopy Studies of Lattice-Mismatched Semiconductor Heterostructures Used for Integrated Optoelectronic Devices (1996) (1)
- First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared (2016) (1)
- Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers (2008) (1)
- Structural, vibrational, and magnetic properties of self-assembled CoPt nanoalloys embedded in SrTiO3 (2020) (1)
- Wetting of Ga Droplets in SiO2/Si Cavities: Application to Self-Assisted GaAs Nanowire Growth (2022) (1)
- Recent advances in development of vertical-cavity based short pulse source at 1.55 μm (2014) (1)
- Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate. (1998) (1)
- Stress‐engineered orderings of self‐assembled III–V semiconductor nanostructures (2005) (1)
- Composition and Face Polarity Influences on Mechanical Properties of (111) Cd1−yZnyTe Determined by Indentation (2019) (1)
- Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog (2020) (1)
- Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction (2020) (1)
- Influence of recapture on the emission statistics of short radiative lifetime quantum dots (2008) (1)
- Molecular Electronics: Large Array of Sub‐10‐nm Single‐Grain Au Nanodots for use in Nanotechnology (Small 18/2011) (2011) (1)
- Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN (2021) (1)
- Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts (2019) (1)
- Semiconductor nanowires in InP and related material systems: MBE growth and properties (2008) (1)
- Development of a cryogenic indentation tool with in situ optical observation, application to the mechanical characterization of II–VI semiconductors (2021) (1)
- Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature (2018) (1)
- Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(001) (2008) (1)
- Ultrasmall Copper Nanoclusters in Zirconium Metal‐Organic Frameworks for the Photoreduction of CO2 (2022) (1)
- Optical and structural properties of 1.3 /spl mu/m emitting InAs/GaAs quantum dots grown by LP-MOVPE as a function of the re-growth temperature (2000) (1)
- Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructures (2017) (1)
- Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide (2011) (1)
- Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE (2010) (1)
- High Modal Gain 9- and 12- Layer InAs/InP Quantum Dash Lasers Emitting at 1.55 μm. (2006) (1)
- (Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities (2020) (1)
- New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications (2011) (1)
- III-V Nanowires on Silicon: a possible route to Si-based tandem solar cells (2017) (1)
- Strength Enhancement of Compensated Strained InP/AlP Superlattice (2002) (1)
- STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−x B x (2022) (1)
- Indium incorporation in In-rich In x Ga 1-x As/GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots (2006) (1)
- Buried dislocation networks for the controlled growth of III-V semiconductor nanostructures (2005) (1)
- Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate (2021) (1)
- Tailoring nanopores for efficient sensing of different biomolecules (2010) (1)
- Large intrinsic birefringence in zinc-blende based artificial semiconductors (2007) (1)
- Investigation of the optical properties of GaP microdisks for optical functions integrated on silicon (2015) (1)
- Atomic scale analyses of -module defects in an NiZr alloy (2018) (1)
- High structural and optical quality of III-V-on-Si 1.2 nm-thick oxide-bonded hybrid interface (2018) (1)
- Z-modules in crystallography: structures and defects (2018) (0)
- Self-catalyzed growth of Ga(Al)As nanowires for solar cells on silicon (2015) (0)
- Invited) Locally Measuring the Adhesion of InP Membranes Directly Bonded on Silicon (2016) (0)
- Mid/far-infrared semiconductor devices exploiting plasmonic effects (2009) (0)
- Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers (2011) (0)
- Condensation of polaritons up to 300K and in-plane propagation in a ZnO microcavity (2013) (0)
- PROCESSINGOFInP-BASED SHALLOWRIDGELASERWAVEGUIDES USINGA HBrICPPLASMA (2007) (0)
- Nanoscale analyses of axial and radial III-V nanowires for solar cells (Conference Presentation) (2018) (0)
- InAs/InP quantum dot-nanowire single photon sources in the telecom band grown monolithically on silicon substrates (2018) (0)
- Recent advances in development of vertical-cavity based short pulse source at 1.55 μm (2014) (0)
- Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions (2021) (0)
- Indentation Crystallization and Phase Transformation of Amorphous Germanium (2005) (0)
- Electroabsorption spectroscopy of Ge∕Si self-assembled islands (2005) (0)
- Room-Temperature Bistability in Spin Crossover-Loaded Metal–Organic Frameworks (2023) (0)
- Deviation of the mechanical response of Wall-patterned (001) GaAs Surface: a central-plastic-zone criterion (2005) (0)
- Mechanism of anisotropy during inductively coupled plasma (ICP) etching of inp-based heterostructures for the fabrication of photonic devices (2008) (0)
- Nano-FIB from Research to Applications — a European Scalpel for Nanosciences (2008) (0)
- Control of heterointerface and strain mapping in Au catalyzed axial Si-Si 1-x Ge x nanowires (2014) (0)
- Nanoscale Iron-Based Metal–Organic Frameworks: Incorporation of Functionalized Drugs and Degradation in Biological Media (2023) (0)
- Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors (2011) (0)
- An indentation method to measure the CRSS of semiconducting materials at elevated temperature (2005) (0)
- Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) (2019) (0)
- Quasi-Phase Matched Second Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides (2022) (0)
- Transducing Energy Loss in Water Electrolysis with a 0D Ion-Sensitive Field-Effect Transistor (2013) (0)
- GaP Template on Si for Solar Water Splitting: Surface Energy Engineering (2018) (0)
- Determination of the polarity of the GaAs (001) rosette arms by convergent beam electron diffraction (2018) (0)
- Quantum cascade lasers grown on silicon (2018) (0)
- Study of the Quality Factor of Micropillar Cavity (2006) (0)
- Dipole orientation in a Quantum Rod (2008) (0)
- 3D GaP/Si(001) growth mode and antiphase boundaries (2016) (0)
- Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy (2022) (0)
- Electrical and structural properties of as-grown core-shell silicon nanowires (2011) (0)
- Challenges and Opportunities for Focused Ion Beam Processing at the Nano-scale (2009) (0)
- Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1−xNx/GaAs (2003) (0)
- Columnar Quantum Dashes for polarization insensitive semiconductor optical amplifiers (2009) (0)
- Surface states mediated spin-to-charge conversion in Bi1-xSbx/Co and Bi2SnTe4/Co topological insulators probed by THz emission spectroscopy. (Conference Presentation) (2022) (0)
- 114) GaP surface texturation on Si for water splitting (2018) (0)
- Wafer bonding of Si for hybrid photonic devices (2014) (0)
- Effects of substrates and catalysts compositions on the crystalline quality of InP Nanowires grown on SrTiO 3 (001), Si(001) and InP (111) (2010) (0)
- Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy (2003) (0)
- InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation) (2019) (0)
- B(Al,Ga)N materials capability for advanced optic devices structures in the UV range (2011) (0)
- GeSnOI mid-infrared laser technology (2021) (0)
- Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications (2018) (0)
- Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE (2017) (0)
- A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy (2018) (0)
- Nanocolonnes semi-conductrices (2007) (0)
- MBE-grown GaP/Si micro-disks (2015) (0)
- Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP (2006) (0)
- Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths (2022) (0)
- Advances in fluoride-based ceramic laser media (2007) (0)
- SiO2 ALD surface-activated layers for void-free III-V on Si hybrid bonded interfaces (2015) (0)
- Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 - x Sbx Topological Insulator. (2023) (0)
- Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime (2004) (0)
- Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics (2013) (0)
- Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template (2023) (0)
- Structural characterisation of transparent oxyfluoride glass-ceramics (2000) (0)
- Self-catalyzed growth of GaAs nanowires on silicon for tandem solar cells (2015) (0)
- Direct bonding of YIG film on Si without intermediate layer (2014) (0)
- Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates (2012) (0)
- Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contribution (2021) (0)
- InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process (2006) (0)
- A nanowire-based telecom band single photon source monolithically grown on silicon (2019) (0)
- Electronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level (2017) (0)
- Mechanical response of a single and released InP membrane (2007) (0)
- Local probing of the interfacial strength in InP/Si substructures (2016) (0)
- One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications (2009) (0)
- Heterostructures monolithic semiconductor epitaxial and method for making (2007) (0)
- Three-dimensional in operando imaging of a semiconductor heterostructure through X-ray Bragg ptychography (2016) (0)
- Carrier depletion and exciton diffusion in single ZnO nanowires (2011) (0)
- Towards a mid‐infrared polaron laser using InAs/GaAs self‐assembled quantum dots (2006) (0)
- Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates (2014) (0)
- Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP (2006) (0)
- Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on Si (2016) (0)
- Polariton condensates in ZnO microcavities: generation, dynamics and localization (2014) (0)
- A universal mechanism to describe III-V epitaxy on Si (2019) (0)
- Surface emitting photonic crystal mid-infrared quantum cascade lasers (2009) (0)
- Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell (2023) (0)
- Magnetic properties and domain structure of (2006) (0)
- MOVPE growth and properties of [111]A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures (2004) (0)
- Why is it difficult to grow spontaneous ZnO nanowires using molecular beam epitaxy? (2020) (0)
- Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si (2016) (0)
- Synthesis and Optical Properties of Silicon Oxide Nanowires (2006) (0)
- Integration of a grafted solid-state nanopore chip into a simple to make and use microfluidic system (2018) (0)
- Conservative indentation flow throughout thin (011) InP foils (2005) (0)
- Controlled Dislocations Injection in N/P Hg1−xCdxTe Photodiodes by Indentations (2019) (0)
- III-V/Si 3D crystal growth: a thermodynamic description (2017) (0)
- Structural, vibrational, and magnetic properties of self-assembled CoPt nanoalloys embedded in SrTiO 3 (2021) (0)
- AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting Lasers (2015) (0)
- Laterally inhomogeneous Au intercalation in epitaxial graphene on SiC(0001): a multimethod electron microscopy study (2016) (0)
- Photonic crystal nanolasers with controlled spontaneous emission (2008) (0)
- High-Optical-Quality Oxide-Free InP-on-Si Hybrid Interface (2016) (0)
- Optimizing the shape of InAs/InP quantum dot-nanowires grown by MBE on silicon for efficient light sources emitting in the telecom band (2019) (0)
- SiIncorporationinInP NanowiresGrownby Au-Assisted Molecular Beam Epitaxy (2009) (0)
- Kinetics and Statistics of Vapor-Liquid-Solid Growth of III-V Nanowires (2012) (0)
- About the step-flow mechanism at the origin of graphene crystallisation at the surface of catalysts (2021) (0)
- Role of marker layers on antiphase domains in GaP/Si heterostructures (2016) (0)
- Photoluminescence properties of Inas/InP quantum rod-nanowires grown on silicon substrate (2014) (0)
- Plasticity and Fracture of InP/Si Substructures (2014) (0)
- Nanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templatesNanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templates (2015) (0)
- Wafer bonded all-optical switching devices (1996) (0)
- Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring. (2021) (0)
- A new structure for FeMnAs (2014) (0)
- Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 /spl mu/m complex-coupled DFB lasers fabrication (1998) (0)
- Erratum: “High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities” [J. Appl. Phys. 111, 043107 (2012)] (2012) (0)
- Growth Dynamics of Ga Nanodroplets on 2D Substrate (2018) (0)
- Quantum cascade lasers monolithically integrated on germanium. (2022) (0)
- Spatial localization of polariton condensates in a ZnO microcavity (2014) (0)
- Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE. (2006) (0)
- Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires (2014) (0)
- In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy (2021) (0)
- Synthesis of Si-based nanowires by solid-liquid phase growth (2006) (0)
- Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy (2008) (0)
- Surface-plasmons on structured metallic surfaces: theoretical analysis, applications to mid-infrared quantum cascade lasers and a-SNOM survey (2008) (0)
- Single photon emission with a Gaussian far-field at telecom wavelength from single InAs/InP quantum dot-nanowires monolithically grown on Si (2019) (0)
- In)GaP integration on Si for photonics and energy (2015) (0)
- Nanoscale metal-organic frameworks for the delivery of nucleic acids to cancer cells (2023) (0)
- Selective protein binding using a solid-state nanopore into a microfluidic device (2021) (0)
- Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C (2020) (0)
- Defects management in the gain media of GeSn micro-disk lasers (2020) (0)
- Nanoindentation-induced structural phase transformations in crystalline and amorphous germanium (2009) (0)
- Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys (2020) (0)
- A general III-V/Si growth process description (2018) (0)
- III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation (2018) (0)
- Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots (2011) (0)
- Additional information on Appl. Phys. Lett. (2011) (0)
- High Density InAlAs/GaAlAs Quantum Dots as an Efficient Enhanced Kerr Material for Transverse Non-linear Optics in Microcavities (2005) (0)
- Strain imaging of an InP nanostructured thin film by 3D X-Ray Bragg Ptychography (2014) (0)
- Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications (2017) (0)
- Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions (2021) (0)
- Wet thermal oxidation of AlInAs and AlAsSb alloys lattice-matched to InP (1997) (0)
- Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation) (2020) (0)
- Selective growth of site-controlled Quantum Dots (2011) (0)
- Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP (2006) (0)
- AlN/Si(111)およびGaNテンプレート上のナノ領域選択成長による単結晶ナノピラミッドBGaN (2016) (0)
- Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma (1997) (0)
- Interband semiconductor lasers insensitive to dislocations (2021) (0)
- Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice (2013) (0)
- Efficiency of THz spintronic emitters: from spin-Hall effect in 3d/5d transition metals to surface states of topological insulators (2021) (0)
- Morphological and Compositional Instabilities of Strained and Unstrained Alloy Layers (1999) (0)
- Fabrication of Gold Nano-Crystal Arrays for Molecular Electronics: High Frequency Molecular Rectifiers and π-π Inter Molecular Interaction Energy (2017) (0)
- Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires (2012) (0)
- Dynamic formation of spherical voids crossing linear defects (2021) (0)
- Non-destructive 3D imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure (2015) (0)
- InAs Nanocrystals grown by Molecular Beam Epitaxy on SiO2/Si for Non Volatile Memories (2007) (0)
- High Optical Quality , Electrically-driven-compatible InP-on-Si Hybrid Interface elaborated at 300 ° C (2017) (0)
- InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy (2008) (0)
- Ultrafast excitonic saturable absorption at 1.55 æm in heavy-ion irradiated quantum well vertical cavity (1999) (0)
- Publisher's Note: Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity [Phys. Rev. B 92 , 235308 (2015)] (2016) (0)
- Strong linear polarization induced by a longitudinal magnetic field in II-VI semimagnetic semiconductor layers (2006) (0)
- Large angle twist-bonded compliant substrates for the epitaxy of lattice mismatched III-V semiconductors (2018) (0)
- Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy (2022) (0)
- Detailed comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting near 1.3 /spl mu/m wavelength (2002) (0)
- Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates (2021) (0)
- Sub-nanometrically resolved chemical maps and their benefits for quantum cascade laser design and fabrication (2015) (0)
- MBE growth and properties of A 3 B 5 nanowires on silicon substrates (2009) (0)
- Bonding Mechanism & Photonic Integration (2016) (0)
- Enhanced sputtering of Ge nanowires under synergetic effect of Mn ion and electron beams (2017) (0)
- Low-dose imaging of metal–organic frameworks and study of their electron-beam stability (2021) (0)
- Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics (2015) (0)
- TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs (2005) (0)
- Critical Role of Water on the Synthesis and Gelling of γ-In2S3 Nanoribbons with a Giant Aspect Ratio (2022) (0)
- GeSnOI technology for enhanced Si-based laser designs and performances (2021) (0)
- Optical harmonic generation from semiconductor metasurfaces (Conference Presentation) (2020) (0)
- Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities (2019) (0)
- MOVPE growth and characterization of long-wavelength emitting quantum dots based lasers at 300 K (2003) (0)
- Extended defects in II‐VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations (1993) (0)
- Electroluminescence from nanocrystals above 2 µm (2021) (0)
- Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities (2019) (0)
- Corrigendum to “Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys” [J. Alloy. Comp. 814 (2020) 152233] (2020) (0)
- Determination of In(Ga)As/GaAs quantum dot composition profile (2005) (0)
- Effect of diffusion from a lateral surface on the rate of GaN nanowire growth (2012) (0)
- Metal-insulator Transition and Magnetic Domains in (Ga,Mn)As Epilayers (2006) (0)
- MOVPE growth of InGaN alloys with high In content on ZnO template substrates (2015) (0)
- Anisotropic Cl$_{2}$-based ICP etching of III-Vs with the addition of Si-containing gases (2010) (0)
- Optical and structural properties of INP nanowires grown on silicon substrate (2010) (0)
- Self-Catalyzed Ga(Al)As Nanowires For Tandem Solar cells on Silicon (2015) (0)
- 有機金属気相エピタキシャル法によって成長させたInAs/InP(001)量子ドットの密度:InAsおよびキャップ層の成長速度の単独作用 (2007) (0)
- Ultrafast saturable absorber device with heavy-ion irradiated quantum wells for high bit-rate optical regeneration at 1.55 /spl mu/m (2000) (0)
- Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon (2014) (0)
- Impact of the 1D nature of InP based nanowires on their optical properties (2014) (0)
- Single-electron tunneling PbS/InP neuromorphic computing building blocks (2019) (0)
This paper list is powered by the following services:
What Schools Are Affiliated With Gilles Patriarche?
Gilles Patriarche is affiliated with the following schools:
