Harry H. Wieder
#144,356
Most Influential Person Now
Harry H. Wieder's AcademicInfluence.com Rankings
Download Badge
Physics
Harry H. Wieder's Degrees
- PhD Physics University of California, Berkeley
- Masters Physics Stanford University
Why Is Harry H. Wieder Influential?
(Suggest an Edit or Addition)Harry H. Wieder's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Vibrational spectrum of hydrogenated amorphous SiC films (1979) (340)
- Electrical Behavior of Barium Titanatge Single Crystals at Low Temperatures (1955) (131)
- Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor (2000) (117)
- THE OXIDATION OF COPPER FILMS TO CuO0.67 (1962) (115)
- Perspectives on III–V compound MIS structures (1978) (101)
- Laboratory notes on electrical and galvanomagnetic measurements (1979) (98)
- Transport coefficients of InAs epilayers (1974) (97)
- Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells (1989) (90)
- Strain relaxation of compositionally graded InxGa1-xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures (1992) (86)
- Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure (1986) (82)
- Optical Properties of Copper Oxide Films (1966) (71)
- Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge (1977) (71)
- Ferroelectric Properties of Colemanite (1959) (68)
- Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs (1986) (58)
- Activation Field and Coercivity of Ferroelectric Barium Titanate (1957) (56)
- Fermi level and surface barrier of GaxIn1−xAs alloys (1981) (55)
- Surface and interface barriers of InxGa1−xAs binary and ternary alloys (2003) (54)
- Model for Switching and Polarization Reversal in Colemanite (1960) (51)
- Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators (1993) (51)
- Properties of InAs/InAlAs heterostructures (2001) (49)
- Surface fermi level of IIIV compound semiconductor-dielectric interfaces (1983) (49)
- Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces (1992) (48)
- Photo-electronic properties of InAs0.07Sb0.93 films (1973) (45)
- InxGa1−xAsyP1−y/InP heterojunction photodiodes (1977) (42)
- Galvanomagnetic properties of recrystallized dendritic InSb films (1966) (42)
- Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters (1966) (42)
- Intermetallic semiconducting films (1970) (40)
- Semiconductor surface passivation (1988) (39)
- Electronic profile of n‐InAs on semi‐insulating GaAs (1978) (37)
- DEVICES AND APPLICATIONS (1970) (37)
- Retarded Polarization Phenomena in BaTiO3 Crystals (1956) (36)
- Problems and prospects of compound semiconductor field‐effect transistors (1980) (36)
- Schottky barrier height of InxAl1−xAs epitaxial and strained layers (1988) (36)
- Ferroelectric Hysteresis in Barium Titanate Single Crystals (1955) (36)
- Inversion-mode insulated gate Ga0.47In0.53As field-effect transistors (1981) (35)
- Electron distribution in pseudomorphic Al0.30Ga0.70As/ In0.15Ga0.85As/GaAs δ‐doped heterostructures (1993) (32)
- Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators (1996) (30)
- Ferroelectric Polarization Reversal in Rochelle Salt (1958) (30)
- Magnetoresistance mobility profiling of MESFET channels (1980) (28)
- Structure and galvanomagnetic properties of two-phase recrystallised InSb-In layers☆ (1965) (28)
- Electrical and galvanomagnetic measurements on thin films and epilayers (1976) (25)
- Hall generators and magnetoresistors (1971) (23)
- MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews (1982) (23)
- Inversion layer transport and properties of oxides on InAs (1980) (22)
- Thickness Dependence of Electron Mobility of InSb Films (1972) (22)
- Some Aspects of Polarization Reversal in Ferroelectric TGS (1964) (21)
- Semi-insulating In0.53Ga0.47As by Fe doping (1983) (21)
- Electrical and galvanomagnetic properties of single crystal InSb dendrites (1967) (21)
- Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures grown on GaAs by step grading (1992) (20)
- Quantum-confined Stark effect modulators at 1.06 mu m on GaAs (1993) (20)
- Device physics and technology of III-V compounds (Welch Memorial Lecture) (1984) (19)
- Microwave‐Induced Pyroelectric Response in Ferroelectric TGS (1963) (19)
- Accumulation mode Ga0.47In0.53As insulated gate field‐effect transistors (1983) (18)
- A Study of Thermomagnetic Remanence Writing on EuO (1971) (18)
- Crystallization and properties of InSb films grown from a nonstoichiometric liquid (1965) (17)
- Characteristics of GaAs laser arrays designed for beam addressable memories (1971) (17)
- Composition dependent transport properties of strain relaxed InxGa1−xAs(x<0.45) epilayers (1992) (16)
- Fabrication of Wide Bore Hollow Cathode Hg+ Lasers (1967) (16)
- Transport in strain relaxed In0.15Al0.85As/In0.17Ga0.83As heterojunctions (1993) (15)
- The thermal oxidation of AlGaAs (1991) (15)
- Some ferroelectric and dielectric properties of triglycine fluoberyllate (1965) (14)
- A Review of the Electrical and Optical Properties of III–V Compound Semiconductor Films (1971) (13)
- InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's) (1987) (13)
- Dielectric/semiconductor interfaces (1993) (13)
- Surface and interfacial properties of Ga0.47In0.53As–Al2O3 MIS structures (1983) (12)
- Some galvanomagnetic and optical properties of Cu doped InSb films (1964) (12)
- Fast photoconductor coupled liquid‐crystal light valve (1979) (12)
- Minority carrier lifetime in InAs epilayers (1974) (12)
- Surface and Bulk Charge Carrier Transport in InAs Epilayers. (1975) (11)
- Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer (1996) (11)
- High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation (1982) (11)
- Properties of strained layer InxAl1−xAs/InP heterostructures (1988) (11)
- Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot (1996) (10)
- Charge carrier transport in gate-voltage-controlled heteroepitaxial indium arsenide layers (1977) (10)
- Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate (1992) (10)
- Direct comparison of thermal and magnetic profiles in (1973) (10)
- Ferroelectric and Pyroelectric Properties of Mineral and Synthetic Colemanite (1962) (9)
- Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm (1995) (9)
- Transverse hall coefficient and magnetoresistance of two-phase InSbIn layers☆ (1965) (9)
- Materials options for field‐effect transistors (1981) (9)
- Magneto-transconductance study of surface accumulation layers in InAs☆ (1978) (9)
- Magnetic Susceptibility of Partially Oxidized Copper Films at 25°C (1963) (9)
- Anomalous Transverse Magnetoresistance of InSb Films (1969) (8)
- Indium phosphide accumulation-mode field-effect transistors (1983) (8)
- MAGNETORESISTANCE COEFFICIENT OF ORDERED DENDRITIC (InSb + In) FILMS (1966) (8)
- Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates (1997) (8)
- Simple, inexpensive double ac Hall measurement system for routine semiconductor characterization (1987) (8)
- ``Self''‐demagnetizing effects in thermomagnetic writing on MnAlGe films (1973) (8)
- Reflection high‐energy electron diffraction intensity oscillation recorder for molecular‐beam epitaxy systems (1990) (7)
- Conduction‐band discontinuities of InxAl1−xAs/In0.53Ga0.47As n‐isotype heterojunctions (1990) (7)
- Magnetoconductance in lateral surface superlattices (1990) (7)
- InSb film raster pattern magnetoresistors (1968) (7)
- Electro-Optic Kerr Effect and Polarization Reversal in Deuterium-Doped Rochelle Salt (1960) (7)
- SEQUENTIAL EXCITATION OF LONGITUDINAL MODES IN GaAs LASERS (1971) (7)
- Electrical properties and applications of InxAl1−xAs/InP (1987) (7)
- Influence of Mode Number and Mode Degeneracy on the Output of a Ruby Laser (1966) (6)
- Electron mobility of sulfur-doped InSb films (1968) (6)
- Superresolution in optical data storage (1973) (6)
- Electron beam modulation of GaAs metal‐semiconductor field‐effect transistors (1980) (6)
- Electric field-induced negative photoconductivity in GaAs (1986) (6)
- A new semiconductor device-the gate-controlled photodiode: device concept and experimental results (1989) (6)
- Plastic electrets and their applications (1953) (6)
- Gate bias controlled charge distribution in the subbands of In0.29Al0.71As/In0.3Ga0.7As modulation doped heterostructures (1994) (5)
- Effect of internal demagnetizing fields on the thermomagnetic writing process in MnAIGe films (1973) (5)
- Consequences of the silicon donor distribution tail in δ‐doped, pseudomorphic AlxGa1−xAs/In1−yGa1−yAs modulation‐doped heterostructures (1994) (5)
- Faraday Rotation in FeNi Films (1963) (5)
- External habit modification and ferroelectric properties of TGS (1963) (5)
- Analog Division Based on the Hall Effect (1963) (5)
- Optical Evidence for the Direct Reduction of CuO to Cu in H2 (1961) (5)
- Mode Perturbations and Filamentary Coupling in GaAs Lasers (1971) (5)
- The Gate-Controlled Photodiode For Optical Matrix Multiplication Applications (1986) (5)
- Switching properties of biased ferroelectric colemanite (1963) (4)
- Cross modulation of light in semiconductor materials in the presence of electric fields. (1985) (4)
- Microwave Magnetoresistance of Dendritic n‐Type InSb Films (1968) (4)
- Observation of a Hole Trap in Liquid-Phase Epitaxial GaAsby Intentional Doping and Space-Charge-Limited Current Analysis (1991) (4)
- Experimental study of efficiency-bandwidth tradeoff of electroabsorption waveguide modulators for microwave photonic links (1997) (4)
- Charge-Carrier Transport in Semi-Insulating InP Surface Layers (1980) (4)
- An Apparatus for the Simultaneous Measurement of the Optical Transmission and Mass Changes in Thin Films (1962) (4)
- Polarization Reversal and Switching in Guanidinium Aluminum Sulfate Hexahydrate Single Crystals (1957) (4)
- Space-charge-limited currents and trapping in semi-insulating InP (1985) (4)
- Surface fermi level of III–V compound semiconductor-dielectric interfaces (1983) (4)
- Novel Method for Measuring Transient Surface Temperatures with High Spatial and Temporal Resolution (1972) (4)
- Evidence for the occupation of DX centers in In0.29Al0.71As (1996) (3)
- Frequency dispersion of sidegating transconductance of GaAs junction field‐effect transistors (1985) (3)
- Surface and interface properties of In0.8Ga0.2As metal–insulator–semiconductor structures (2002) (3)
- Electroabsorption effects in InxGa1−xAs/GaAs strained‐layer superlattices (1990) (3)
- Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped In x .Ga 1−y As/In y Al 1−y As Heterostructures (1992) (3)
- Low Temperature Grown Thin Inalas Step Graded Buffers for Application on Optical Modulator at 1.3 μM (1995) (3)
- An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications (1990) (3)
- Fast Rise‐Time, Alternating Polarity Electromechanical Pulse Generator (1957) (3)
- Electronic and Optical Properties of InAsxSb1−x Films (1972) (3)
- Double quantum well charge transport in pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As/GaAs modulation doped heterostructures (1994) (3)
- Uniformly Polarized GaAs Laser Array (1972) (3)
- Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates (1997) (2)
- Oxygen Sorption and Electrical Conductivity of Copper Oxide Films (1959) (2)
- Interfacial properties of InAlAs/InGaAs HIGFETs and MIS capacitors (1990) (2)
- Highly-Strained InxGa1-xAs/GaAs Multiple Quantum Wells for Electroabsorption Modulation (1990) (2)
- Electrical Lead for Vacuum Systems (1958) (2)
- Electron‐beam microzone refining of narrow band‐gap semiconducting alloy layers (1977) (2)
- Stability Of Thin Te And Te-Alloy Films For Optical Data Storage (1983) (2)
- Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ ‐modulation‐doped heterostructure (1996) (2)
- Bibliography on the hall-effect theory and applications (1964) (2)
- Intervalley electron transfer in InSb films (1974) (2)
- Hall Effect Stroboscope and Noise Discriminator (1962) (2)
- Sampling Magnetometer Based on the Hall Effect (1962) (2)
- CHAPTER 4 – OPTICAL PROPERTIES (1970) (2)
- Inx(AlzGa1-z)1-xAs as buffers for the growth of strain-relaxed InxGa1-xAs epilayers (1993) (1)
- Electroabsorption Waveguide Modulators (1997) (1)
- Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors (1991) (1)
- Bulk and interfacial properties of the compositionally graded InxAl1−xAs (x≤0.52) quasi‐insulator and its applications (1991) (1)
- Magnetotransport properties of two-dimensional channels in pseudomorphic and strain relaxed In0.17Ga0.83As heterojunctions (1992) (1)
- Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunctions grown by MBE on misoriented (100) GaAs substrates (1993) (1)
- PREPARATION OF III–V COMPOUND LAYERS (1970) (1)
- Optimization of strained-layer InxGa1-xAs/GaAs multiple quantum wells for electroabsorption modulation (1990) (1)
- Sidegating in GaAs current limiters (1987) (1)
- HALL EFFECT INVESTIGATIONS (1963) (1)
- Magnetic bubble domain memories in epitaxial garnet films (1975) (1)
- aAs Substrates Using a Step-Graded w Temperature Grown InAlAs Buffer (1996) (1)
- Design, fabrication and characterization of narrowband angularly-insensitive resonant cavity filter (2002) (1)
- Surface properties of semi‐insulating indium phosphide (1984) (1)
- Narrow Bandgap Semiconductor Devices (1987) (0)
- Progress in Thin-Film Studies Discussed in Boston (1969) (0)
- Cutting Edge Transport in the Integer Quantum Hall Effect (1998) (0)
- STRUCTURE AND MORPHOLOGY OF FILMS (1970) (0)
- Field-Effect Spectroscopy of Interface States (1988) (0)
- Automatic shutter control for molecular‐beam epitaxial reactors (1988) (0)
- ELECTRICAL AND GALVANOMAGNETIC PROPERTIES (1970) (0)
- Some aspects of the technology of III–V compound semiconducting layers (1983) (0)
- CHAPTER 6 – MEASUREMENT TECHNIQUES (1970) (0)
- Low temperature processing and characterization of metastable anisotype heterojunction‐gate strained‐layer field‐effect transistors (1991) (0)
- Dynamic Measurements of Thermomagnetic Reversal in Gd‐Co Films (1974) (0)
- Synthesis and Properties of Mismatched Heterojunction/Substrate Interfaces (1992) (0)
- Unstrained, Modulation-Doped, Field-Effect Transistor Grown on GaAs Substrate In 0.3 Ga 0.7 As/1n 0.29 Al 0.71 As (1992) (0)
- High saturation power 1.3-/spl mu/m MQW electroabsorption waveguide modulators on GaAs substrates (1997) (0)
- Direct Comparison of Thermal and Magnetic Profiles in “Curie Point” Writing on MnGaGe Films (2008) (0)
- Properties and device applications of evaporated InSb films (1963) (0)
- Electrorefraction and electroabsorption in InP and GaAs near the band gap (1985) (0)
- Surface and Interfacial Properties of Ga(0.47)In(0.53)As Alloys. (1983) (0)
- BIBLIOGRAPHY ON THE HALL EFFECT THEORY, DESIGN, AND APPLICATIONS, (1963) (0)
- Electrical and galvanomagnetic properties of Cu-doped InSb films (1967) (0)
- A-heterojunction and dielectrically insulated gate InP field effect transistors (1987) (0)
- Ion-Beam Milling of Silicon Carbide Epitaxial Layers. (1982) (0)
- III‐V compound semiconductor insulated gate field effect transistors (2008) (0)
- Accumulation-Mode in O.53 Ga 0.47 as Field Effect Transistor. (1983) (0)
- Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications (1986) (0)
- The Stability of Te and Te-Alloy Films for Optical Data Storage (1983) (0)
- Investigation of GaAs field‐effect transistor interfaces using pulsed electron beam excitation (1982) (0)
- Magnetoconductance Oscillations In InGaAs/GaAs Lateral Surface Superlattices (1989) (0)
- Effect of optically generated carrier on microwave properties of ridged coplanar waveguide (1992) (0)
- Characterization of Surface Electronic Properties of Semi-Insulating InP. (1984) (0)
- Nonlinear absorption in a strained InGaAs/GaAs MQW/n-i-p-i structure (1990) (0)
- A resistive-gate InAlAs/InGaAs/InP 2DEG CCD (1992) (0)
- Apparatus for measuring transient processes during thermomagnetic recording (1974) (0)
- Molecular Beam Epitaxy for Combined Optical and Electronic Circuits (1984) (0)
- Synthesis of Mismatched Heterojunction/Substrate Interfaces (1991) (0)
- Abstract: Bulklike Films of Bismuth–Antimony Alloys (1973) (0)
- Pulse Delay for Sampling Instrumentation (1962) (0)
- Surface and Interfacial Properties of InP (1985) (0)
- Edge State Tunneling in the Integer Quantum Hall Effect (1997) (0)
- Erratum: Magnetic Susceptibility of Partially Oxidized Copper Films at 25°C (1964) (0)
- Surface-normal Electroabsorption Modulations In The 0.9-1/spl mu/m Wavelength Range (1990) (0)
- Modulation of an Optical Beam by a Second Optical Beam in Biased Semi-Insulating GaAs (1985) (0)
- High saturation power 1.3-μm MQW electroabsorption waveguide modulators on GaAs substrates (1997) (0)
- Consequences of DX centers on the charge distribution of double quantum well, δ ‐modulation‐doped heterostructures (1995) (0)
- Interface Constraints on MESFET and MISFET Architectures (1985) (0)
This paper list is powered by the following services:
