Harold L. Grubin
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Harold L. Grubinengineering Degrees
Engineering
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#2557
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Applied Physics
#164
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#173
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Electrical Engineering
#252
World Rank
#290
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Engineering Physics
Harold L. Grubin's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Harold L. Grubin's Published Works
Published Works
- The physics of semiconductor devices (1979) (16663)
- The Physics of Instabilities in Solid State Electron Devices (1992) (148)
- The Gunn-hilsum Effect (1979) (87)
- Quantum moment balance equations and resonant tunnelling structures (1989) (68)
- The influence of boundary conditions on current instabilities in GaAs (1969) (59)
- Modeling of Quantum Transport in Semiconductor Devices (1994) (53)
- UTILIZATION OF QUANTUM DISTRIBUTION FUNCTIONS FOR ULTRA-SUBMICRON DEVICE TRANSPORT (1981) (45)
- Transport via the Liouville equation and moments of quantum distribution functions (1993) (39)
- Numerical Studies of Charge Collection and Funneling in Silicon Device (1984) (37)
- On the nature of ballistic transport in short-channel semiconductor devices (1980) (35)
- On the form and stability of electric-field profiles within a negative differential mobility semiconductor (1973) (33)
- Analysis of an inhomogeneous bulk "S-shaped" negative differential conductivity element in a circuit containing reactive elements (1973) (33)
- The Physics of Submicron Semiconductor Devices (1989) (29)
- Reduction of interface phonon modes using metal-semiconductor heterostructures (1993) (27)
- The Wigner Distribution Function (1982) (26)
- Numerical simulation of charge collection in two- and three-dimensional silicon diodes—a comparison (1986) (26)
- Dramatic reduction in the longitudinal-optical phonon emission rate in polar-semiconductor quantum wires (1992) (21)
- Numerical simulations of Czochralski silicon growth (1988) (21)
- Simulation of Charge Collection in a Multilayer Device (1985) (21)
- An experimental study of the influence of boundary conditions on the Gunn effect (1975) (21)
- Spontaneous Oscillations in Gallium Arsenide Field Effect Transistors (1980) (20)
- Direct Electromagnetic Generation of Compressional Waves in Metals in Static Magnetic Fields (1970) (20)
- Analysis of Bulk Negative Differential Mobility Element in a Circuit Containing Reactive Elements (1972) (20)
- CIRCUIT‐CONTROLLED CURRENT INSTABILITIES IN n‐GaAs (1970) (18)
- Uses of the quantum potential in modelling hot-carrier semiconductor devices (1994) (16)
- Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETS (1987) (15)
- Electrical characteristics of bulk n-InP oscillators (1972) (15)
- Electron diffraction through an aperture in a potential wall (1989) (15)
- Application of lbi techniques to the solution of the transient, multidimensional semiconductor equations (1987) (15)
- Limitations to ballistic transport in semiconductors (1981) (14)
- The Numerical Physics of Micron-Length and Submicron-Length Semiconductor Devices (1982) (14)
- Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor (1988) (14)
- Dynamic cathode boundary fields and transferred electron oscillators (1976) (13)
- Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillators (1978) (12)
- Switching Characteristics of Nonlinear Field-Effect Transistors: Gallium-Arsenide Versus Silicon (1980) (12)
- Hot electron transport effects in field effect transistors (1978) (12)
- Numerical study of an AlGaAs/GaAs heterostructure bipolar transistor: Emitter design and compositional grading (1988) (11)
- Influence of evanescent states on quantum transport through an array of elastic scatterers (1990) (10)
- Hot-carrier constraints on transient transport in very small semiconductor devices (1981) (10)
- The influence of boundary conditions and the bias on amplification from negative differential mobility elements (1975) (10)
- A comparison of current instabilities in n-GaAs and n-CdS (1969) (10)
- Monte Carlo investigation of minority‐electron transport in In0.53Ga0.47As (1987) (9)
- HOT-ELECTRON RELAXATION DYNAMICS IN QUANTUM WIRES (1994) (8)
- Density Matrix Simulations of Semiconductor Devices (1995) (8)
- CURRENT INSTABILITIES IN n‐InP (1971) (8)
- Millimeter-wave InP lateral transferred-electron oscillators (1988) (7)
- Large Signal Numerical Simulation of Field Effect Transistors (1977) (7)
- Hot-electron overcooling and intersubband population inversion in quantum wires (1994) (7)
- The role of transport in very small devices for VLSI (1981) (6)
- Quantum Transport in Ultrasmall Devices: NATO ASI. (1995) (6)
- Gunn-Hilsum Effect Electronics (1980) (6)
- Hot carrier microwave conductivity in the non-zero collision duration regime (1981) (6)
- Notched InP planar transferred electron oscillators (1982) (6)
- Analysis of a self‐aligned AlGaAs/GaAs heterostructure bipolar transistor: Steady‐state and transient simulations (1989) (5)
- The role of boundaries on high speed compound semiconductor devices (1983) (5)
- Dynamic cathode contacts and transferred electron semiconductors (1976) (5)
- Monte Carlo Investigation of Hot Photoexcited Electron Relaxation in GaAs* (1987) (5)
- Transport and Material Considerations for Submicron Devices (1988) (5)
- Self-aligned notched planar InP transferred-electron oscillators (1985) (5)
- Effect of valence band anisotropy on the Ultrafast relaxation of photoexcited electrons in GaAs (1989) (4)
- Numerical simulation of magnetic liquid-encapsulated Czochralski growth of gallium arsenide (1991) (4)
- The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors (1993) (4)
- Diluted magnetic semiconductor superlattices (2006) (4)
- Conceptual problems in modeling submicron device physics (1981) (4)
- A New Nonparabolic Hydrodynamic Model with Quantum Corrections (1991) (4)
- Depletion layer amplification from negative differential mobility elements (1973) (4)
- CARRIER-CARRIER INTERACTION AND INTERVALLEY TRANSFER EFFECTS ON THE ULTRAFAST RELAXATION OF PHOTOEXCITED ELECTRONS IN GaAs (1988) (4)
- The Physics of Submicron Structures (2011) (4)
- Electron Transport Using the Quantum Corrected Hydrodynamic Equations (1995) (4)
- Nanostructure device simulations through the quantum Liouville equation in the coordinate representation (1994) (3)
- Electron-Hole Interaction In GaAs (1988) (3)
- Monte Carlo investigation of minority electron transport in In0.53Ga0.47As (1988) (3)
- Interfaces, boundaries and quantum device transport (1998) (3)
- Scaling, material, and design characteristics of the permeable base transistor (1988) (3)
- SPIN DEPENDENT TRANSPORT IN QUANTUM AND CLASSICALLY CONFIGURED DEVICES (2006) (3)
- Transient effects in submicron devices load line dependence (1979) (3)
- SPIN DEPENDENT WIGNER FUNCTION SIMULATIONS OF DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES – B FIELD TUNING (2007) (3)
- Reduction in the Longitudinal-Optical Phonon Emission Rate in Polar-Semiconductor Quantum Wires and Quantum Wells (1993) (3)
- Subpicosecond Hot Electron Transport (1983) (3)
- Temperature description of transport in single- and multiple-barrier structures (1992) (3)
- Boundaries, transients and multiple barrier devices (2000) (3)
- Electron velocity overshoot and valley repopulation effects in diamond (1989) (3)
- Contact effects in InP near‐micron transferred electron devices (1988) (3)
- Simulation of Single Radiation Particle Tracks in Silicon and Gallium Arsenide Semiconductor Devices. (1986) (3)
- THE MOMENTS OF THE BOLTZMANN TRANSPORT EQUATION AS APPLIED TO THE GALLIUM ARSENIDE PERMEABLE BASE TRANSISTOR (1987) (3)
- Density-matrix and quantum-moment studies of single- and multiple-barrier structures (1992) (2)
- Numerical studies of annealed non-stoichiometric low temperature grown GaAs (1997) (2)
- Modeling of an inversion base bipolar transistor (1989) (2)
- Structural dependent electrical characteristics of submicron gallium arsenide devices (1984) (2)
- Modeling of large signal device/circuit interactions (1989) (2)
- Dissipation and quantum transport simulations in nanoscale devices (1996) (2)
- Exact solutions of the linearized equation for current flow in negative differential mobility elements (1972) (2)
- Transient simulations of dilute magnetic semiconductors RTDs (Invited Paper) (2005) (2)
- Physics and Modeling Considerations for VLSI Devices (1984) (2)
- Wigner simulation of the transition of a 'single' to 'double' barrier DMS device (2005) (2)
- The Gunn Diode (1992) (2)
- The Role of Boundary Conditions in Near- and Submicrometer-Length Gallium Arsenide Structures (1985) (2)
- Bias-dependent oscillations in 10 μm-long transferred-electron oscillators (1974) (2)
- Electrons in semiconductors: how big are they? (1998) (2)
- Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells (1992) (2)
- Physics Of InP/InGaAs Heterostructure Bipolar Transistors For EHF Applications (1989) (1)
- Temperature dependent effects and catastrophic burnout of the integrated series impatt structure (ISIS) diodes (1989) (1)
- Spatial and temporal constraints on transport in submicron gallium arsenide devices (1981) (1)
- THE ROLE OF LONGITUDINAL-OPTICAL PHONONS IN NANOSCALE STRUCTURES (1992) (1)
- Transport Coefficients Based on Magneto Translationally Invariant Wave Functions (1970) (1)
- Quantum Contributions and Violations of the Classical Law of Mass Action (1998) (1)
- Transferred electron devices with emphasis on the role of the contacts – a review (1975) (1)
- Wigner function studies of spin transport in dilute magnetic semiconductor barrier structures (2004) (1)
- Density Matrix Coordinate Representation Numerical Studies of Quantum Well and Barrier Devices (1991) (1)
- Monte Carlo Investigation Of Minority Electron Transport In InP (1989) (1)
- Phase Space Boundary Conditions, Dissipation and Quantum Device Transport (1997) (1)
- HOT CARRIER SPACE AND TIME DEPENDENT TRANSIENTS IN SHORT CHANNEL GALLIUM ARSENIDE DEVICES (1981) (1)
- The Avalanche Diode (1992) (1)
- Analysis of InP/InGaAs double heterostructure bipolar transistors for high frequency applications (1990) (1)
- Hot Electron Effects in Semiconductor Devices (1980) (1)
- A study of near-micron InP transferred electron devices (1985) (1)
- Insulating and Breakdown Characteristics of Low Temperature GaAs (1991) (1)
- Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods (1991) (1)
- Simulation of the Response of a Gallium Arsenide JFET to Single Particle Radiation in Two and Three Dimensions. (1987) (0)
- Noise and Thermal Contributions in Transferred Electron Two and Three Terminal Devices. (1983) (0)
- Phase Space Boundary Conditions and Quantum Device Transport (1998) (0)
- Design and Development of Low Noise, High Speed, High Electron Mobility Transistors (HEMTs). (1991) (0)
- Relaxation oscillation simulations and dilute magnetic semiconductor RTDs (2004) (0)
- Transport Via Moments of Quantum Distribution Functions (1990) (0)
- Self-consistent Time Dependent Solutions to the Quantum Liouville Equation in the Coordinate Representation: Application to Barrier Structures (1996) (0)
- Physics and Modeling of Compound SemiConductor Devices with Semi-Insulating and Native-Oxide Layers (2000) (0)
- SNDC Multilayer Semiconductor Structures (1992) (0)
- Monte Carlo Investigation Of Carrier-Carrier Interaction And Ultrafast Cooling Of Hot Photoexcited Carriers In GaAs (1987) (0)
- Numerical Modeling of Two-Terminal Quantum Well Devices (1989) (0)
- Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation (1994) (0)
- Semiconductor Materials for High Frequency Solid State Sources. (1983) (0)
- Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays (1984) (0)
- Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices (1984) (0)
- Transient quantum device simulations and the Wigner distribution function (2000) (0)
- TRANSIENT RELAXATION EFFECTS IN TRANSFERRED ELECTRON DEVICES. (1979) (0)
- Multilayered diluted magnetic semiconductor structures and 2DEG (2005) (0)
- Phenomena Unique to Sub-Micrometer Devices (1992) (0)
- Transient Transport in Binary and Ternary Semiconductors. (1986) (0)
- Boundary Scattering Effects in High Field Transport in Submicron Structures (0)
- Influence of Contact Conditions and the Circuit on Short Negative Differential Mobility Semiconducting Devices. (1977) (0)
- Large Signal Time Dependent Quantum Mechanical Transport in Quantum Phase Based Devices (1994) (0)
- Related Fabrication and Phenomena (1989) (0)
- Application of translationally invariant wavefunctions in a magnetic field to frequency and wavelength dependent transport phenomena (1970) (0)
- Numerical Studies of the Dual HEMT/Algorithm Development and Numerical Studies of Schrodinger's Equation. (1987) (0)
- Transient Transport in Nanostructure Devices Via The Quantum Liouville Equation In The Coordinate Representation (1999) (0)
- Wigner function and density matrices and their application to transport properties of semiconductor devices (1998) (0)
- Numerical Simulation of the Function of Scientific Instrumentation for Measuring the Speed of Electron Devices. (1992) (0)
- Two Dimensional Numerical Simulation of Negative Differential Mobility Semiconducting Devices (1977) (0)
- Studying the Physics and Operation of Multi-Terminal Near-Micron and Sub-Micron Length, Hot Electron Semiconductor Devices. (1988) (0)
- Response to the comments by Simmons and Taylor (1988) (0)
- Quantum Wires and Ballistic Point Contacts (1989) (0)
- The Advantages of Magnetic Field Control of Charge within Diluted Magnetic Semiconductor Superlattices (2006) (0)
- Three-Dimensional Numerical Studies of the Physics of Semiconductor Crystal Growth. (1987) (0)
- Thermal and Electrothermal Instabilities (1992) (0)
- Transient Wigner Function Studies of DMS Barrier Devices (2006) (0)
- Numerical Studies of the Physics and Operation of LTG Materials and Devices (1997) (0)
- FREE ELECTRON MODEL CALCULATION OF THE DEPENDENCE OF THE ATTENUATION OF TRANSVERSE SOUND WAVES ON A MAGNETIC FIELD PARALLEL TO THE LATTICE DISPLACEMENT (1963) (0)
- Capacitance calculations in nanostructure devices via the quantum Liouville equation in the coordinate representation (1994) (0)
- Magnetic Field Control of THz Relaxation Oscillations in RTDs With Diluted Magnetic Semiconductor Layers (2008) (0)
- Contributors, May 1980 (1980) (0)
- Wigner Function RTD Simulations with DMS Barriers (2006) (0)
- Studying Quantum Phase-Based Electronic Devices (1988) (0)
- Hot Electron Contributions in Two and Three Terminal Semiconductor Devices (1980) (0)
- Scientific and Engineering Semiconductor Device Simulation Tools as a Windows Application (1998) (0)
- Optimization of transistor design including large signal device/circuit interactions at extremely high frequencies (20-100+GHz) (1991) (0)
- Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs (1991) (0)
- EXPERIMENTALAND THEORETICALSTUDYOF ALPHAPARTICLE INDUCEDCHARGE COLLECTIONINGAAsFETS (1987) (0)
- Modeling of Quantum Transport in Semiconductor Devices (The Physics and Operation of Ultra-Submicron Length Semiconductor Devices). (1994) (0)
- Numerical Simulation of the Permeable Base Transistor. (1987) (0)
- Quantum Devices and Structures. (1991) (0)
- CARRIER-CARRIER INTERACTIONS IN SEMICONDUCTOR PLASMAS. (1987) (0)
- CHAPTER 7 – Negative Differential Mobility Devices (1979) (0)
- Band structure dependent transient transport in near and submicron length semiconductor devices (1985) (0)
- HOT ELECTRON NOISE PROPERTIES OF SEMICONDUCTORS IN THE NON-ZERO COLLISION DURATION REGIME (1981) (0)
- Ultrashort Transients In Semiconductors (1987) (0)
- Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime (2014) (0)
- Opto-Electronic Components from Non-Stoichiometric III-V Materials. (1995) (0)
- Numerical Simulation of the Comparative Electrical Performance of the Permeable Base Transistor, Opposed Gate-Source Transistor and Heterostructure Launched Ballistic Field Effect Transistor (1990) (0)
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