Hans-joachim Queisser
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Physics
Hans-joachim Queisser's Degrees
- PhD Physics University of Göttingen
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(Suggest an Edit or Addition)Hans-joachim Queisser's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells (1961) (10351)
- Electron scattering by ionized impurities in semiconductors (1981) (459)
- Alloy broadening in photoluminescence spectra ofAlxGa1−xAs (1984) (305)
- Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells (1993) (272)
- Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy (1982) (189)
- Slip Patterns on Boron‐Doped Silicon Surfaces (1961) (141)
- Solar cell efficiency and carrier multiplication in Si1−xGex alloys (1998) (121)
- Photoluminescence of Cu‐Doped Gallium Arsenide (1966) (118)
- STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON (1963) (115)
- Diffusion‐Induced Dislocations in Silicon (1964) (114)
- X‐Ray Observations of Diffusion‐Induced Dislocations in Silicon (1962) (95)
- Hall-Effect Analysis of Persistent Photocurrents in n-GaAs Layers (1979) (95)
- Thermodynamic efficiency limits for semiconductor solar cells with carrier multiplication (1996) (86)
- Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions☆ (1964) (84)
- Diffusion along Small-Angle Grain Boundaries in Silicon (1961) (82)
- Impurity photovoltaic effect in silicon (1970) (76)
- Photoluminescence at Dislocations in GaAs (1974) (75)
- Growth of Lattice Defects in Silicon during Oxidation (1964) (70)
- On the thickness dependence of open circuit voltages of p-n junction solar cells (1993) (69)
- Detailed balance limit for solar cell efficiency (2009) (58)
- Experimental studies of optical surface excitations (1973) (54)
- Stacking Faults in Epitaxial Silicon (1962) (53)
- Forward characteristics and efficiencies of silicon solar cells (1962) (51)
- Radiative efficiency limit of terrestrial solar cells with internal carrier multiplication (1995) (49)
- Carrier Transport and Potential Distributions for a Semiconductor p-n Junction in the Relaxation Regime (1971) (47)
- High‐resolution direct‐display x‐ray topography (1975) (45)
- Photoluminescence and solution growth of gallium arsenide (1966) (42)
- Charges on Oxidized Silicon Surfaces (1963) (42)
- Microplasma breakdown at stair-rod dislocations in silicon (1963) (39)
- Silicon epitaxial solar cell with 663‐mV open‐circuit voltage (1992) (38)
- Charged Defect States at Silicon Grain Boundaries (1986) (37)
- Photoluminescence of Silicon‐Compensated Gallium Arsenide (1966) (36)
- Recombination at deep traps (1978) (35)
- Luminescence of zinc doped solution grown gallium arsenide (1967) (34)
- Current transport in relaxation-case GaAs (1975) (32)
- Luminescence in slipped and dislocation‐free laser‐annealed silicon (1980) (32)
- Luminescence properties of (GaAs)l(AlAs)m superlattices with (l,m) ranging from 1 to 73 (1988) (32)
- Properties of Twin Boundaries in Silicon (1963) (32)
- Quantum efficiencies exceeding unity in silicon leading to novel selection principles for solar cell materials (1994) (31)
- Photovoltaic conversion at reduced dimensions (2002) (29)
- Modern crystallography I, symmetry of crystals. methods of structural crystallography (1982) (29)
- Illumination-dose dependence of persistent photoconductivity ofn-GaAs epitaxial layers (1980) (29)
- Complex nature of the copper acceptor in gallium arsenide (1971) (27)
- Profiling of deep impurities by persistent photocurrent measurements (1982) (23)
- Formation of polycrystalline silicon with log-normal grain size distribution (1998) (22)
- Hot carrier cooling in gaas quantum wells (1988) (21)
- Band‐to‐band recombination in Ga0.5In0.5P (1994) (21)
- Electrical Properties of Dislocations and Boundaries in Semiconductors (1982) (21)
- Photoluminescence of InP (1970) (20)
- Advances in the optical analysis of semiconductor materials (1976) (20)
- The conquest of the microchip (1988) (19)
- Multiple carrier generation in solar cells (2010) (19)
- Principles and technology of photovoltaic energy conversion (1995) (18)
- Monocrystalline Si waffles for thin solar cells fabricated by the novel perforated-silicon process (1998) (17)
- Solution growth of silicon on Al-Si coated quartz glass substrates (1994) (17)
- Propagation of dislocations during epitaxy (1972) (16)
- Electrical and Electronic Properties of Grain Boundaries in Silicon (1987) (16)
- In situ x‐ray topography of epitaxial Ge layers during growth (1978) (15)
- Dispersion of Surface Plasmons in InSb. (1971) (15)
- X-ray optics : applications to solids (1977) (15)
- Thermovoltaic Evidence for Electronic Knudsen Flow through Silicon Microcontacts (1983) (13)
- Effects of hydrostatic pressure on Raman scattering in Ge quantum dots (2001) (13)
- Optical determination of carrier mobility in GaAs (1976) (12)
- Electron-Phonon Coupling in the Barriers of GaAs Schottky Diodes (1968) (12)
- Shallow acceptor luminescence in GaAs grown by liquid phase epitaxy (1972) (12)
- Persistent photoconductivity in sulfur-diffused silicon (1984) (11)
- MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992) (11)
- Photo-Hall-effect measurements of ionized impurity scattering in GaAs (1978) (11)
- Monomolecular steps of ultra-low density on (100) growth faces of liquid phase epitaxial GaAs (1994) (11)
- Hydrogen Passivation of the Dislocation-Related D-Band Luminescence in Silicon† (1993) (11)
- Optical Emission From Semiconductors (1974) (11)
- Photoluminescence of trigonal selenium (1967) (11)
- Potential of Si1−xGex alloys for Auger generation in highly efficient solar cells (1995) (10)
- TEM characterization of the interface quality of MOVPE grown strained InGaAs/GaAs heterostructures† (1995) (10)
- Creation and motion of dislocations in silicon surface layers (1964) (10)
- Extrinsic-Intrinsic Stacking-Fault Pairs in Epitaxial Silicon (1963) (9)
- Persistent Photoconductivity in Semiconductors (1985) (9)
- Time-Dependent Photoconductivity in Semi-Insulating Gallium-Arsenide (1990) (9)
- Logarithmic hierarchy of universal dielectric response (1991) (8)
- Doping-dependence of luminescence in InP at very high excitation levels (1971) (7)
- First MOS transistors on insulator by silicon saturated liquid solution epitaxy (1992) (7)
- High-resolution real-time X-ray topography of dislocation generation in silicon (1982) (7)
- The Materials Challenge (1993) (6)
- Luminescence, review and survey (1981) (6)
- Optical evaluation of radiative recombination in III–V compound semiconductors (1980) (6)
- Optically enhanced hall mobility in GaAs (1977) (6)
- X-Ray Optics (1977) (6)
- Visible Luminescence from Porous Silicon and Siloxene: Recent Results (1992) (6)
- Visible Luminescence from Silicon: Quantum Confinement or Siloxene? (1992) (5)
- Sign of the Hall Coefficient in a Relaxation‐Case Semiconductor (1971) (5)
- Reversal of contrast for infrared absorption of deep levels in semi‐insulating GaAs (1985) (5)
- Impurity Interaction on Excited Acceptor States in GaP (1978) (5)
- Some theoretical aspects of the physics of solar cells (1961) (4)
- On the conditions for recombinative space‐charge injection (1972) (4)
- Festkorper Probleme XV : Advances in Solid State Physics (1976) (4)
- Carrier scattering by impurity potentials with spatially variable dielectric functions (1979) (4)
- Semiconductor carrier scattering by ionized impurity potentials incorporating spatially variable dielectric functions (1978) (4)
- Low-Frequency Fluctuations of a GaAs Diode in the Relaxation Regime (1971) (4)
- Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects (1994) (3)
- p‐Type Surface Layers in Ion‐Bombarded Silicon (1965) (3)
- Surface excitons, calculation of their dispersion curve, and possibilities for their experimental observation (1975) (3)
- Limit of Efficiency of p ‐ n Junction Solar Cells (2016) (3)
- Slow Solar Ascent (2004) (3)
- Relaxation-case diode in a magnetic field (1972) (3)
- Charge transfer to surface states in PbTe-films (1964) (3)
- Perfecting the Solid State (1992) (3)
- Solidity is an imperfect state (2008) (2)
- Photovoltaic Effect of Gold in Silicon (1969) (2)
- Excited singlet states of molybdenum chloride clusters (1993) (2)
- Time-resolved luminescence of semiconductor heterostructures in high magnetic fields (1995) (2)
- Charge transport in semiconductor microjunctions (1988) (2)
- Optically enhanced mobility in a persistent photoconduction state (1983) (2)
- Sealing of bore-holes in Si crystals by epitaxial overgrowth below 560° C (1990) (1)
- 663 mV Open Circuit Voltage Epitaxial Thin Film Silicon Solar Cells (1991) (1)
- Electrons and Defects in Semiconductors (1998) (1)
- Dislocations and Semiconductor Device Failure (1962) (1)
- ROUGHENING OF MONOATOMIC GROWTH STEPS IN EPITAXIAL GALLIUM ARSENIDE FILMS (1991) (1)
- Diffused three-layer structures along small-angle grain boundaries in silicon (1961) (1)
- Detailed balance: lifetimes and efficiencies (2007) (1)
- Comments on ``Transition from Ohmic to Space‐Charge‐Limited Conduction'' (1971) (1)
- Slip patterns and dislocation models of heavily doped silicon surfaces (1961) (1)
- Screening and carrier bunching in III–V compounds (1965) (1)
- The Information Society: Issues and Illusions@@@Thinking Machines: The Evolution of Artificial Intelligence@@@The Conquest of the Microchip (1990) (1)
- Order and Disorder in Semiconductors (1995) (1)
- Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon (1963) (1)
- Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements (1986) (1)
- Solids at Stuttgart (1978) (1)
- Crystal defects in silicon solar cells—II. Transmission electron microscopy (1963) (0)
- Ballistic Electron Transport Detected by Seebeck Voltage Measurements on Semiconductor Micro-Contacts (1985) (0)
- STUDY ON A DEFINITIVE CONFIRMATION OF THERMAL INSTABILITY IN SILICON POWER TRANSISTORS. (1963) (0)
- Book reviews (1974) (0)
- PHOTOLUMINESCENCE OF SELENIUM AND SELENIUM-TELLURIUM MIXED CRYSTALS (1969) (0)
- Gallium arsenide p+‐ν diodes under hydrostatic pressure (1975) (0)
- CHAPTER 4 CHEMICAL SYNTHESIS , DEPOSITION AND CHARACTERIZATION OF LEAD SELENIDE ( PbSe ) THIN FILMS BY CHEMICAL AND PHYSICAL METHODS (2014) (0)
- SEMICONDUCTOR ELECTROLUMINESCENCE AND INJECTION LASERS (1973) (0)
- Festkörper Probleme : advances in slid state physics : plenary lectures of the Divisions "Semiconductor physics", "Metal physics" of the German Physical Society, Freudenstadt, April 1-5, 1974 (1974) (0)
- Book reviews (1975) (0)
- William Shockley (1910–1989) (1989) (0)
- Book reviews (1975) (0)
- Order and Disorder in Semiconductors. (1995) (0)
- Book reviews (1976) (0)
- Periodicity-dependent photoluminescence of (GaAs)m (AlAs)n superlattices (1988) (0)
- Book Review: Thin‐Film Crystalline Silicon Solar Cells. By Rolf Brendel (2003) (0)
- High Efficiency Tandem Solar Cell based on InGaP and GaAs for Sustainable Energy Applications (2019) (0)
- THIN COMPOSITIONAL LAYERS IN SILICON (1961) (0)
- Crystal defects in silicon solar cells--I. X-ray observations (1963) (0)
- Photoluminescence at lattice imperfections in gallium arsenide (1976) (0)
- Book reviews (1974) (0)
- Electronic Transport in Semiconductor Materials (1984) (0)
- Stacking Faults and Failure of Silicon Devices (1963) (0)
- Introduction: Structure and structuring of solids (1977) (0)
- Solution growth of polycrystalline silicon on Al-Si coated borosilicate and quartz glass substrates for low cost solar cell application (1994) (0)
- Book reviews (1975) (0)
- Detailed Balance Limit of Efficiency of p–n Junction Solar Cells (2018) (0)
- Deep impurities (1971) (0)
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