Hellmut Fritzsche

Hellmut Fritzsche's AcademicInfluence.com Rankings

Hellmut Fritzsche

Physics

#2478

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#3654

Historical Rank

#979

USA Rank

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Physics

Why Is Hellmut Fritzsche Influential?

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According to Wikipedia, Hellmut Fritzsche was an American physicist. He came to the US on a one-year Smith-Mundt fellowship in 1950/51. After receiving his Diplom in physics from the University of Göttingen in 1952 he returned to the US. He earned his Ph.D. from Purdue University in 1954 where in the same year he became Instructor and in 1955 Assistant Professor. In 1957 he moved to the University of Chicago, where in 1963 he became a full professor and in 1996 retired. During his career at the University of Chicago he was director of its Materials Research laboratory 1973–77 and chairman of its Physics department 1977–86. During his chairmanship he planned and oversaw the building of the Kersten Physics Teaching Center. For twenty five years Fritzsche served on the University of Chicago Advisory Committee for the Encyclopædia Britannica and during the last 7 years as its chairman. Fritzsche was a vice president and board member of Energy Conversion Devices, Inc. since 1969 and a member of the board of directors of United Solar Systems Corp. from 1993 to 2003.

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Hellmut Fritzsche's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors (1976) (1041)
Simple band model for amorphous semiconducting alloys (1969) (773)
Amorphous silicon and related materials (1989) (508)
Physics of Disordered Materials (1985) (340)
A general expression for the thermoelectric power (1971) (330)
Tetrahedrally-bonded amorphous semiconductors (1985) (322)
Optical and electrical energy gaps in amorphous semiconductors (1971) (258)
Characterized of glow-discharge deposited a-Si:H (1980) (252)
Resistivity and hall coefficient of antimony-doped germanium at low temperatures (1958) (240)
Defect chemistry of lone-pair semiconductors (1978) (205)
Amorphous semiconductors for switching, memory, and imaging applications (1973) (196)
Impurity Conduction in Transmutation-Doped p -Type Germanium (1960) (182)
Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon (1979) (147)
Persistent photoconductivity in doping-modulated amorphous semiconductors (1984) (144)
Electrical Properties of Germanium Semiconductors at Low Temperatures (1955) (141)
Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H (2001) (129)
The origin of reversible and irreversible photostructural changes in chalcogenide glasses (1993) (119)
Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity (1983) (112)
Electronic transport and recombination in amorphous semiconductors at low temperatures. (1989) (105)
Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon‐hydrogen alloys (1978) (103)
Hydrogen content and density of plasma‐deposited amorphous silicon‐hydrogen (1979) (102)
Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon (1995) (97)
Conduction and switching phenomena in covalent alloy semiconductors (1970) (96)
Localization and metal-insulator transitions (1985) (92)
Properties of amorphous semiconducting multilayer films (1984) (91)
Calorimetric and dilatometric studies on chalcogenide alloy glasses (1970) (89)
Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors (1980) (87)
Hopping and related phenomena (1990) (87)
Diamagnetic Susceptibility of Tetrahedral Semiconductors (1974) (87)
Epitaxial strain and magnetic anisotropy in ultrathin Co films on W(110). (1995) (86)
The effect of charged additives on the carrier concentrations in lone-pair semiconductors (1978) (86)
Effect of Uniaxial Compression on Impurity Conduction in n -Type Germanium (1962) (83)
Magnetic Frustration in Ultrathin Fe Films. (1995) (81)
Photoconductivity of amorphous chalcogenide alloy films (1970) (81)
Chemical shift photoelectron diffraction from molecular adsorbates. (1992) (79)
Physics of instabilities in amorphous semiconductors (1969) (78)
Electronic conduction in amorphous semiconductors and the physics of the switching phenomena (1970) (76)
Photoreduction and oxidation of as‐deposited microcrystalline indium oxide (1996) (76)
Optical anisotropies in chalcogenide glasses induced by band-gap light. (1995) (76)
Reversible structural transformations in amorphous semiconductors for memory and logic (1971) (75)
Electrical Properties of Tellurium at the Melting Point and in the Liquid State (1957) (74)
Effect of Stress on the Donor Wave Functions in Germanium (1962) (73)
Electrical conductivity of amorphous chalcogenide alloy films (1970) (73)
Properties of amorphous semiconducting a -Si:H/ a -SiN x :H multilayer films and of a -SiN x :H alloys (1984) (71)
Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity (1994) (68)
High-Sensitivity Piezoreflectivity (1965) (68)
Electrical Properties of p-Type Indium Antimonide at Low Temperatures (1955) (68)
Photo-induced fluidity of chalcogenide glasses (1996) (66)
Why are chalcogenide glasses the materials of choice for Ovonic switching devices (2007) (61)
Optical properties of amorphous chalcogenide alloy films (1970) (59)
Structural determination of a molecular adsorbate by photoelectron diffraction: Ammonia on Ni{111} (1992) (58)
Angular dependence of perpendicular magnetic surface anisotropy and the spin-reorientation transition. (1994) (53)
Radiation Hardness of Ovonic Devices (1968) (51)
Some observations on the photoconductivity of amorphous semiconductors (1992) (51)
Electronic Properties of Amorphous Semiconductors (1974) (51)
Transport, correlation and structural defects (1990) (51)
Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:H (1980) (47)
PIEZORESISTANCE OF n-TYPE GERMANIUM (1959) (47)
Direct photoelectron-diffraction method for adsorbate structural determinations. (1992) (47)
Porosity and oxidation of amorphous silicon films prepared by evaporation, sputtering and plasma-deposition☆ (1979) (45)
Structure determination of an alkali metal-CO coadsorption phase: Ni(111)-K/CO. (1995) (45)
Search for Explaining the Staebler-Wronski Effect (1997) (45)
High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped Germanium (1965) (45)
Switching and Memory in Amorphous Semiconductors (1974) (43)
A doping-precipitated morphology in plasma-deposited a-Si:H (1981) (43)
Determination of the density of states of a-Si:H using the field effect (1980) (42)
Experimental demonstrations of direct adsorbate site identification using photoelectron diffraction. (1993) (42)
Reversible changes of the optical and electrical properties of amorphous InOx by photoreduction and oxidation (1994) (42)
Electronic Phenomena in Amorphous Semiconductors (1972) (41)
Semiconductor-metal and superconducting transitions induced by pressure in amorphousAs2Te3 (1977) (41)
Density-of-states distribution in the mobility gap of a-Si:H (1985) (41)
Photoinduced metastable surface effects in boron‐doped hydrogenated amorphous silicon films (1983) (40)
Simple band model for amorphous semiconducting alloys. (1969) (39)
Light-Induced Structural Changes in Glasses (2000) (39)
Toward understanding the photoinduced changes in chalcogenide glasses (1998) (39)
Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency (1990) (38)
Linear-superposition method for the multiple-scattering problem in low-energy-photoelectron diffraction. (1993) (38)
The electrical properties of germanium semiconductors at low temperatures (1954) (37)
The effect of electronegativity difference on the defect chemistry in lone-pair semiconductors (1978) (37)
Effect of compensation and correlation on conduction near the metal non-metal transition (1980) (34)
Photoreduction and oxidation of amorphous indium oxide (1993) (34)
Density of states and mobility—lifetime product in hydrogenated amorphous silicon, from thermostimulated conductivity and photoconductivity measurements (1986) (33)
Drift-mobility measurements in amorphous semiconductors using traveling-wave method (1983) (33)
Reduced L1 level width and Coster-Kronig yields by relaxation and continuum interactions in atomic zinc. (1992) (32)
Structure determination for coadsorbed molecular fragments using chemical shift photoelectron diffraction. (1993) (30)
Thermostimulated conductivity in amorphous semiconductors (1985) (30)
Amorphous Silicon and Related Materials: (In 2 Parts) (1989) (29)
Holographic recording in indium–oxide (In2O3) and indium–tin–oxide (In2O3:Sn) thin films (1996) (29)
Determination of the density of gap states: field effect and surface adsorption (1980) (29)
Low temperature electronic transport in non-crystalline semiconductors (1989) (29)
Transmission electron microscopy study of periodic amorphous multilayers (1985) (28)
Heterogeneities and surface effects in glow discharge deposited hydrogenated amorphous silicon films (1982) (28)
Attempts to measure thermally stimulated currents in chalcogenide glasses (1974) (27)
Far Ultraviolet Spectroscopy of Solids in the Range 6–36 eV Using Synchrotron Radiation from an Electron Storage Ring (1971) (27)
The origin of photo-induced optical anisotropies in chalcogenide glasses☆ (1993) (26)
Recombination and photoconductivity in amorphous semiconductors at low temperatures (1989) (25)
Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential (1982) (25)
Evidence for compositional heterogeneities in hydrogenated amorphous silicon nitride films (1994) (24)
Ambient induced changes of the conductance of amorphous germanium (1970) (23)
A masterslice LSI for subnanosecond random logic (1979) (23)
Effect of Minority Impurities on Impurity Conduction inp-Type Germanium (1959) (23)
Effect of the surface condition on the conductance of hydrogenated amorphous silicon (1984) (22)
Photoinduced stress in hydrogenated amorphous silicon films (2002) (22)
Temperature Dependence of the Absorption Edge in Crystalline and Vitreous As2S3 (1974) (22)
The temperature dependence of the photoconductivity of n-type a-Si:H and the effect of staebler-wronski defects (1987) (22)
Light-induced metastable changes in defect density and photoconductivity of a-Si:H between 4.2 and 300 K (1996) (21)
Thickness and refractive‐index changes associated with photodarkening in evaporated As2S3 films (1976) (21)
Effect of Shear on Impurity Conduction in n-Type Germanium (1960) (21)
Universal behaviour of the normalized photoconductivity at low temperatures in amorphous semiconductors (1989) (20)
High-Stress Piezoresistance in Degenerate Arsenic-Doped Germanium (1965) (19)
The sign of photocarriers and thermal quenching of photoconductivity in a-SiH (1991) (19)
Effect of Elastic Strain on Interband Tunneling in Sb-Doped Germanium (1963) (19)
Hopping and correlated hopping studies of p-Ge at large uniaxial stresses and high magnetic fields (1981) (18)
PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H (1981) (18)
Photovoltaic effect and space charge capacitance of amorphous semiconductor-metal contacts (1972) (18)
Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model (2000) (18)
Temperature dependence of creation and annealing of light-induced metastable defects in a-Si:H (1993) (17)
Effect of surface oxide on transport properties in a-Si:H☆ (1983) (16)
The Role of oxygen diffusion in photoinduced changes of the electronic and optical properties in amorphous indium oxide (1996) (16)
Temperature and excitation dependence of the photo-induced excess conductivity in doping modulated amorphous silicon (1985) (15)
Stress and internal friction associated with light-induced structural changes of a-Si:H deposited on crystalline silicon microcantilevers (2000) (15)
Far-Ultraviolet Reflectance Spectra of Ionic Crystals (1971) (14)
Valley-Orbit Splitting of Antimony in Germanium (1960) (13)
Anisotropic amplitudes of adsorbate bending vibrations from x-ray photoelectron diffraction: A multiple-scattering evaluation. (1994) (13)
Time resolved photoluminescence in a-Si : H: A comparison between single layers and superlattices (1987) (13)
Conduction in a-Si:H studied by traveling wave technique☆ (1983) (13)
Analysis of the traveling-wave technique for measuring mobilities in low-conductivity semiconductors (1984) (13)
Interchannel interactions in highly energetic radiationless transitions of neonlike ions. (1991) (12)
Transport near the mobility edge, the sign of the hall effect, photoreduction and oxidation of amorphous InOχ (1993) (12)
Treatment of thermal vibrations and local static disorder within tensor LEED. (1994) (12)
Indirect exchange coupling for orthogonal anisotropies. (1995) (12)
A 100ps 9K gate ECL masterslice (1985) (11)
What are Non-Crystalline Semiconductors (1981) (10)
The structure of light-induced metastable defects in a-Si:H☆ (1995) (10)
Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated a-Si:H (1996) (10)
Light Induced Defects in a-Si:H, Temperature Dependence of their Creation and Anneal and their effect on Photocarrier Lifetime (1994) (10)
Light-induced metastable changes in amorphous silicon nitride (1994) (10)
Photoinduced change in the density of localized states near the conduction band of doped a-Si:H. (1987) (10)
Critical discussion of models proposed to explain photo‐induced anisotropies in chalcogenide glasses (2009) (10)
The nature and energies of gap states in a-Si:H (1987) (10)
Photoconductivity in compensated a-Si:H and the effect of bias light on the drift mobility (1993) (9)
Photoconductivity during 30 ns laser pulses in a-Si:H (1996) (9)
Light induced stress in a-Si1−xGex:H alloys and its correlation with the Staebler–Wronski effect (2002) (9)
Temperature Dependence of Indirect Interband Tunneling in Germanium (1963) (9)
Identification of photo-induced paramagnetic centers in As43S57 glass by electron spin resonance☆ (1981) (9)
Charge injection into SiO2 during field effect and photo‐field‐effect measurements in hydrogenated amorphous silicon (1984) (9)
Study of the ambient optical recording dynamics on sputtered indium oxide thin films (1998) (8)
Critical review of amorphous and microcrystalline silicon materials and solar cells: Special issue in honor of Stanford R. Ovshinsky (2003) (8)
Density of States in Noncrystalline Solids (1985) (8)
Hydrogenated chalcogenide glasses As2−xSe3+x and As2−xS3+x prepared by plasma decomposition (1980) (8)
Theory of Indirect Interband Tunneling in Semiconductors (1965) (8)
Doping induced structural changes of oriented trans-polyacetylene (1989) (8)
Electronic structure of undoped and doped highly-oriented polyacetylene by electron energy-loss spectroscopy (1989) (8)
Towards understanding persistent photoconductance in doping modulated amorphous silicon (1989) (8)
Effect of interrupting film growth on the properties of a-Si: H (1988) (8)
Light-induced perturbation of the high-temperature equilibrium in phosphorus-doped a-Si:H. (1987) (8)
Persistent photoconductance in a-Si: H/a-SiNx: H multilayers (1991) (7)
Persistent photoconductivity in compositional modulated amorphous semiconductors (1987) (7)
Effective Medium Expression for the Optical Properties of Periodic Multilayer Films (1985) (7)
Photo-induced and bias induced metastable states in the transverse conduction of PNPN doping-modulated a-Si:H superlattices (1987) (7)
Doping dependence of the low-temperature photoconductivity in hydrogenated amorphous silicon (1991) (7)
Electron drift mobility in amorphous semiconductor multilayer superlattices (1984) (7)
Ribosome substructure investigated by scanning force microscopy and image processing (1998) (7)
The origin of persistent photoconductance in doping-modulated and compensated a-Si:H (1989) (7)
Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H (1991) (7)
Scanning Force Microscopy Study of Methanol-Induced Changes in the Distribution of Silver Particles in Colloidal Metal Films (1997) (7)
A New Perspective on an Old Problem: The Staebler-Wronski Effect (2010) (7)
Change in The Spectral Shape of the Subgap Absorption in a-SI:H by Photodegradation at 4.2K and its Relation to the Mobility-Lifetime Product (1997) (6)
Drift mobility of doped a-Si:H at high temperatures. (1987) (6)
Evidence for Different Kinds of Dangling Bond Defects in a-Si:H (1993) (6)
Temperature dependence of the photoconductivity and the near absence of light-induced defects in a-Si{sub x}Ge{sub 1-x}:H (1996) (6)
The Nature of Localized States and the Effect of Doping in Amorphous Semiconductors (1977) (5)
The Growth, Steady State and Decay of the Photocarrier Population at low Temperatures (1994) (5)
INVESTIGATION OF IMPURITY CONDUCTION IN TRANSMUTATION-DOPED GERMANIUM, (1960) (5)
Creation of Staebler-Wronski Defects at Low Temperatures (1993) (5)
Transmission electron microscopy of a-Si:H/a-SiNx:H multilayers (1985) (5)
Light-Induced Degradation of a-Si:H - A Comparison of Short-Laser-Pulse and Steady Light Degradation (1995) (5)
The Science and Technology of an American Genius: Stanford R Ovshinsky (2008) (5)
New results in quasiperiodic amorphous semiconductor superlattices (1989) (5)
The Limitations of the Constant Photocurrent Method for Determining Subgap Absorption (1995) (5)
Electronic structure of conjugated oligomers (1991) (5)
Metastable centers and photoconduction in a-SiNx:H (1993) (5)
Dependence of the persistent photoconductivity in doping-modulated a-Si: H multilayers on the exposure temperature (1987) (5)
Thermostimulated currents in a-Si:H and a-Si:N:H (1984) (5)
The Separation of Gases by Membranes (2000) (4)
Optical and Electronic Properties of Modified Amorphous Materials (1991) (4)
Chapter 9 Electronic Properties of Surfaces in a-Si: H (1984) (4)
Electrical properties of a-Si:H/a-SiCx:H multilayers (1987) (4)
Early Research On Amorphous Silicon: Errors and Missed Opportunities (2000) (4)
Structural constraints in non-crystalline semiconductors (1985) (4)
Dual beam and transient infrared stimulated photoconductivity in hydrogenated amorphous silicon at 4.2 K (1996) (4)
Electronic and Structural Effects in Chalcogenide Glasses (1973) (4)
Summary and closing remarks (1983) (4)
New Thin‐Film Tunnel Triode Using Amorphous Semiconductors (1972) (4)
Annealing dependence of PDS of a-Si:H/a-SiNx:H multilayers (1989) (3)
Thickness dependence of the acoustoelectric effect in N-type aSi:H (1984) (3)
PHOTOLUMINESCENCE IN a-Si:H FILMS AND MULTILAYERS (1989) (3)
Luminescence lifetime distribution in amorphous semiconductors (1991) (3)
A New Method for the Formation of P‐P Bonds (1964) (3)
Proceedings of the International Workshop on Amorphous Semiconductors Held in Beijing, China from 13-18 October, 1986 (1987) (3)
DUAL LIGHT BEAM MODULATION OF PHOTOCARRIER LIFETIME IN INTRINSIC a-Si:H (1981) (3)
The effect of uniaxial tensile stress on impurity conduction in germanium (1959) (3)
The study of optical nonlinearity in amorphous Si-based alloys* (1991) (3)
Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1 (1996) (3)
A 150-ps 9000-gate ECL masterslice (1985) (3)
Initial-state effects in scanned-energy-mode photoelectron diffraction. (1994) (3)
Measurement of internal stress in thin films (1974) (3)
Negative Magnetoresistance of Carbon Resistors in the Temperature Range 0.35°–1°K (1970) (3)
Travelling wave drift mobility measurements of photoexcited carriers in a-Si :H at low temperatures (1991) (3)
Stress Effects on Impurity-Induced Tunneling in Germanium (1965) (2)
Contact limitation of secondary photoconductivity in intrinsic a-Si:H (1998) (2)
Quantum Oscillations of the Hopping Magnetoconductivity in Doped Semiconductors (1993) (2)
Annealing Behavior of Porosity, Density of Free Spins, Internal Stress and Diamagnetic Susceptibility of Amorphous Germanium (1974) (2)
COMMENT ON PHOTODILATATION EFFECT OF UNDOPED A-SI:H FILMS (1998) (2)
Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures (1995) (2)
Photo Effects in Doping Modulated Amorphous Semiconductors (1986) (2)
Amorphous semiconducting films prepared by plasma decomposition of H2S-N2-NH3 (1980) (2)
PLASMA-DEPOSITED HYDROGENATED CHALCOGENIDE GLASSES (1981) (2)
Metastable Non-Equilibrium Conductance States in Doping-Modulated a-Si:H Multilayers (1988) (2)
Transport and Defects in Amorphous Semiconductors. Proceedings of the International Topical Conference on Transport and Defects in Amorphous Semiconductors Held at Bloomfield Hills, Michigan on 22-24 March 1984, (1984) (2)
Ovshinsky award : Why chalcogenides are ideal materials for Ovshinsky's ovonic threshold and memory devices (2006) (2)
Study of artificial interfaces in undoped and phosphorus doped a-Si:H (1989) (2)
Momentum-dependent dielectric function of the cis-transoid conformation of cis-polyacetylene. (1989) (2)
Neutron Transmutation Doping of GaAs (1981) (2)
Changes of Drift Mobility in a-Si:H with Light Exposure and Doping (1987) (2)
A polyimide-isolated three-layer metallization system for bipolar gate arrays (1986) (2)
Quantum confinement in single layer a-Si:H films (1996) (1)
Hydrogen Storage, Fuel Cells and the Hydrogen Energy Loop (2008) (1)
Metastable defects in a-Si:H (2008) (1)
Effect of Stress on the Excess and Hump Current in Sb-Doped Germanium Diodes (1965) (1)
Other Topics of Interest (2008) (1)
KINDS OF DISORDER AND THE ELECTRONIC STRUCTURES OF TETRAHEDRAL AMORPHOUS SEMICONDUCTORS. (1981) (1)
Influence of nonradiative and nongeminate processes on a lifetime distribution of photoexcited carriers in amorphous semiconductors at low temperatures (1991) (1)
Amorphous semiconducting Si:H (1980) (1)
Computer Simulation of Energy Relaxation and Recombination of Nonequilibrium Electrons in a Disordered System with Localized Electronic States (1991) (1)
Electronic Conduction and Switching in Chalcogenide Glasses (1973) (1)
Optical and Electrical Properties of Amorphous Semiconductor Doping Superlattices (1985) (1)
TEMPERATURE AND PRESSURE DEPENDENCE OF THE OPTICAL AND ELECTRICAL GAP IN CHALCOGENIDE GLASSES (1970) (1)
Space charges resulting from photocurrents exceeding the thermionic emission currents in a-Si:H (2000) (1)
Nature of AX center in amorphous silicon/nitride multilayers (1989) (1)
PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS. (1985) (1)
Charge-transfer-doping-modulated amorphous semiconductor multilayer films (1986) (1)
Metastable Defects in a-SiOx:H and a-SiCx:H (1991) (1)
Temperature Dependence of Metastable Defect Creation in a-SiNx:H (1991) (1)
Quantum oscillations of the hopping magnetoconductivity in doped semiconductors: The influence of compensation (1993) (1)
Effect of Stress on Interband Tunneling in Semiconductors (1969) (1)
Snow water equivalent survey of the Souris River Basin. Date of survey: March 1976 (1977) (1)
Semiconductors, Amorphous—Electronic Properties (2003) (0)
Doping modulated amorphous semiconductors (2008) (0)
Review of metastable defects in a‐Si:H (2008) (0)
Photoinduced Reversible Conductivity and Photoconductivity Changes in Transparent Amorphous and Micro-Crystalline In2O3-X Films (1996) (0)
Search for reversible light‐induced changes in the Si‐H absorption bands of a‐Si:H (2008) (0)
The Mobility Lifetime Product of Electrons as a Function of Temperature and Electron Concentrations in a-Si:H (1994) (0)
Space Charge Memory Effect in a-Si:H at low Temperatures (1997) (0)
Reversible Changes in the Electronic and Optical Properties of Micro-Crystalline ln2O 3-x: A Comparison with Amorphous In2O3-x (1996) (0)
Experimental Investigation of the Electronic Properties of Solids. (1975) (0)
Report of the Committee on the Graduate School (1979) (0)
Dedication to Marvin Silver (1995) (0)
PRESSURE DEPENDENCE OF PHONON ASSISTED INTERBAND TUNNELING (1964) (0)
Stanford R. Ovshinsky – A sketch (2012) (0)
Effect of pressure on electron tunneling into amorphous germanium (1980) (0)
Li-like Uranium (2003) (0)
EFFECT OF THE SURFACE ON THE PROPERTIES OF AMORPHOUS SEMICONDUCTORS (1986) (0)
Thermal Quenching of Photoconductivity and the Sign of Photocarriers in Doped a-Si:H (1991) (0)
Systematic model calculations of HFS in light and heavy ions (2002) (0)
Comment on ``Vacuum catastrophe: An elementary exposition of the cosmological constant problem,'' by Ronald J. Adler, Brendan Casey, and Ovid C. Jacob [Am. J. Phys. 63 (7), 620-626 (1995)] (1997) (0)
Conversion of Solar Energy-Photovoltaics (2008) (0)
Theory of dressed bosons and nuclear matter distributions (2002) (0)
ELECTRONIC PROPERTIES OF SEMICONDUCTORS AT LIQUID HELIUM TEMPERATURES. (1965) (0)
Metastable Nonlinear Conductance Phenomena in Amorphous Semiconductor Multilayers (1988) (0)
Amorphous semiconducting (2007) (0)
Matter distributions and elastic proton-scattering cross sections in exotic nuclei (2002) (0)
Microscopic correlations in simple systems : (e,e'p) reactions, dynamics of nuclear halo formation, three body problem (2003) (0)
Extrinsic localized states in amorphous films of TemTl2 (2008) (0)
Amorphous silicon periodic and quasi-periodic superlattices (1991) (0)
Frequency dependence of drift mobility in a‐Si:H measured by traveling‐wave method (1991) (0)
Transient Photoconductivity of a-Si:H at Low Temperatures Induced by Bandgap Light (1996) (0)
Summary and review (1972) (0)
Light-induced metastable structural changes in hydrogenated amorphous silicon (1996) (0)
Electronically erasable, directly overwritable multi-bit single-cell memory elements and made of these arrangements (1992) (0)
Cluster factorization in many-body atomic, nuclear, and quark physics (2003) (0)
DCM in hydrogen- and lithium-like simple atomic systems (2003) (0)
Halo studies with high-energy (20GeV) proton scattering (2003) (0)
Infrared quenching of photoconductivity: Recombination in a‐Si:H (2008) (0)
Primary shape and nanomechanical properties of natural Fe-colloids studied by AFM and SEM (2011) (0)
Determination of the density of states of. cap alpha. -Si:H using the field effect (1979) (0)
Two- and three-body halos in helium and lithium isotopes (2002) (0)
The effect of extended light exposure on the Urbach tail and the subbandgap absorption in a‐Si:H (2008) (0)
The question of temperature-dependent intrinsic dipoles in chalcogenide glasses (1999) (0)
Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 10{sup 13} and 10{sup 28}cm{sup {minus}3}s{sup {minus}1} (1996) (0)
XeI原子6s[3/2]2亚稳态寿命的理论研究 (2002) (0)
Aerial radiological survey of the Three Mile Island Station Nuclear Power Plant (Goldsboro, Pennsylvania). Date of survey: August 1976 (1977) (0)
Changes in the field effect density of states of a–Si:H with annealing (2008) (0)
Cluster transformation coefficients for studying the structure and dynamics of N-particle atoms and nuclei (2002) (0)
Photoinduced reversible conductivity and photoconductivity changes in transparent amorphous and micro-crystalline In{sub 2}O{sub 3{minus}x} films (1996) (0)
Variable Range Tunneling in Amorphous Ge (1974) (0)
Magnetization distribution and HFS of 235U91 (2003) (0)
EXPERIMENTAL AND THEORETICAL INVESTIGATION OF THE ELECTRONIC PROPERTIES OF GERMANIUM SEMICONDUCTORS AT HELIUM TEMPERATURES (1962) (0)
4p-B-16 G.D. a-Si の Field Effect (1979) (0)
Abstructs of Papers Submitted to the Seminar (1977) (0)
SETA - South East Transport Axis (2014) (0)
非晶質半導体a‐Si:H/a‐SiNx:H多層薄膜とa‐SiNx:H合金の性質 (1984) (0)
A process for preparing tertiary phosphines (1962) (0)
Phase Change Memory (2008) (0)
Theory of low-temperature photoconductivity and photoluminescence in amorphous semiconductors (2009) (0)
ANOMALOUS HOPPING TRANSPORT IN p-GaSb (1990) (0)
Nuclear Transmutation Doping of GaAs. (1980) (0)
[The interaction between inosine and Cu(II)-, Co(II)- and Mn(II)-ions]. (1970) (0)
[DNA-oligopeptide reciprocity. NMR studies of the specificity of oligopeptide binding]. (1972) (0)
Chapter 3: Enhancement of Crystallization of Hydrogenated Amorphous Silicon by A (0)
INTRA-AND INTERVALLEY SCATTERING AND THE TAILING OF THE CONDUCTION BAND IN IMPURE NTYPE GERMANIUM, (1962) (0)

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